Optoelectronic device and processing method thereof

JP7874233B2Active Publication Date: 2026-06-15AMS OSRAM INT GMBH
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
AMS OSRAM INT GMBH
Filing Date
2023-09-04
Publication Date
2026-06-15

AI Technical Summary

⚠Technical Problem

Mesa etching in micro-LEDs (μLEDs) causes crystal defects and non-radiative recombination (NRR) at the mesa edge, particularly affecting charge carrier diffusion and quantum efficiency, especially in small devices like InGaAlP-based red light emitters due to long diffusion lengths and high surface recombination rates.

⚗Method used

Implementing passivation methods such as quantum well mixing (QWI) and regrowth techniques to reduce NRR, using high-bandgap materials and conductive barrier layers to form lateral potential barriers, and employing dielectric passivation for GaN/InGaN-based μLEDs, along with pre-passivation etching to minimize defects.

🎯Benefits of technology

The proposed methods significantly reduce non-radiative recombination, enhancing the quantum efficiency and performance of small μLED devices by preventing charge carrier leakage and improving optical isolation.

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Abstract

The present invention relates to an optoelectronic device having a semiconductor stack with a mesa structure, including at least one of an n-doped layer and a p-doped layer and an active region disposed on one of the n-doped layer and the p-doped layer. A regrown conductive barrier layer covers the boundary of the active region with a material having a large bandgap. Each contact layer is electrically coupled to at least one of the n-doped layer and the p-doped layer, with one contact layer being in electrical contact with the regrown conductive barrier layer covering the structured boundary of the active region. A portion of the regrown conductive barrier layer extends substantially parallel to one of the n-doped layer and the p-doped layer and surrounds the active region. A structured first current blocking layer is disposed between the portion of the regrown conductive barrier layer and one of the n-doped layer and the p-doped layer, and the first current blocking layer has an opening filled with a conductive material.
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