Optoelectronic device and processing method thereof

JP7874233B2Active Publication Date: 2026-06-15AMS OSRAM INT GMBH
View PDF 12 Cites 0 Cited by

Patent Information

Application Number
JP2025508951
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2022-09-05
Filing Date
2023-09-04
Publication Date
2026-06-15
Estimated Expiration
2043-09-04

AI Technical Summary

Technical Problem

Mesa etching in micro-LEDs (μLEDs) causes crystal defects and non-radiative recombination (NRR) at the mesa edge, particularly affecting charge carrier diffusion and quantum efficiency, especially in small devices like InGaAlP-based red light emitters due to long diffusion lengths and high surface recombination rates.

Method used

Implementing passivation methods such as quantum well mixing (QWI) and regrowth techniques to reduce NRR, using high-bandgap materials and conductive barrier layers to form lateral potential barriers, and employing dielectric passivation for GaN/InGaN-based μLEDs, along with pre-passivation etching to minimize defects.

Benefits of technology

The proposed methods significantly reduce non-radiative recombination, enhancing the quantum efficiency and performance of small μLED devices by preventing charge carrier leakage and improving optical isolation.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 0007874233000001
    Figure 0007874233000001
  • Figure 0007874233000002
    Figure 0007874233000002
  • Figure 0007874233000003
    Figure 0007874233000003
Patent Text Reader

Abstract

The present invention relates to an optoelectronic device having a semiconductor stack with a mesa structure, including at least one of an n-doped layer and a p-doped layer and an active region disposed on one of the n-doped layer and the p-doped layer. A regrown conductive barrier layer covers the boundary of the active region with a material having a large bandgap. Each contact layer is electrically coupled to at least one of the n-doped layer and the p-doped layer, with one contact layer being in electrical contact with the regrown conductive barrier layer covering the structured boundary of the active region. A portion of the regrown conductive barrier layer extends substantially parallel to one of the n-doped layer and the p-doped layer and surrounds the active region. A structured first current blocking layer is disposed between the portion of the regrown conductive barrier layer and one of the n-doped layer and the p-doped layer, and the first current blocking layer has an opening filled with a conductive material.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Surface light emitting laser and manufacture thereof

    JP1994013710A

  • Method of manufacture semiconductor device

    JP1994350197A

  • Semiconductor light emitting device and its manufacture

    JP1995015039A

  • Gallium nitride compound semiconductor laser and its manufacture thereof

    JP1998093198A

  • Surface emitting laser, laser optical transmission module using it, and applied system

    JP1999204875A