PCB mounting apparatus, PCB processing system, and PCB mounting method

Abstract

To suppress a residue of a second adhesive from being left on a semiconductor wafer after peeling by suppressing a second support and the semiconductor wafer from sticking together strongly because of low adhesive strength between both while suppressing a defect in sticking a first support even when the second support is stuck on a second surface of the semiconductor wafer.SOLUTION: A substrate sticking device 1 comprises: a sticking part 10 which sticks a second support 110 on a second surface Sb of a semiconductor wafer W on the opposite side from a first surface Sa via a second adhesive 60 while a first support 100 is stuck on the first surface Sa of the semiconductor wafer W via a first adhesive 50 at a first temperature; and a heating part 20 which heats one or both of the second support 110 and semiconductor wafer W at a second temperature lower than the first temperature.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a substrate attaching device, a substrate processing system, and a substrate attaching method.

Background Art

[0002] Due to requirements such as miniaturization, weight reduction, and thinning of electronic devices, thinning is also required for semiconductor devices included in electronic devices. In order to thin a semiconductor wafer on which a semiconductor device is formed, it is necessary to thin the semiconductor wafer. However, when the semiconductor wafer becomes thin, its strength decreases and it becomes easy to break, so the handling property deteriorates. Therefore, a plate-like first support is attached to the first surface on which the circuit electrodes, electronic circuits, etc. of the semiconductor wafer are formed to form a first laminate, and the second surface on the opposite side of the first surface is ground in the state of this first laminate to thin the semiconductor wafer, and then, a plate-like second support is attached to the second surface (that is, the ground surface) on the opposite side of the first surface to form a second laminate, thereby compensating for the strength of the semiconductor wafer has been proposed (for example, see Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] A first support is attached to the first surface of the semiconductor wafer via a first adhesive, and then, halfA second support is attached to the second surface of the conductive wafer via a second adhesive. The attachment of the first support and the second support are performed by heating the semiconductor wafer and the first support (second support), respectively. In this case, when attaching the second support, the first support is attached to the semiconductor wafer via the first adhesive. Therefore, if the temperature at which the second support is attached to the second surface of the semiconductor wafer is higher than the temperature at which the first support is attached to the first surface, it will cause the first adhesive to soften, leading to poor attachment of the first support. Furthermore, if the adhesive strength between the second support and the semiconductor wafer is high, they will stick together firmly, and when the second support is peeled off the semiconductor wafer, residue of the second adhesive may be left on the semiconductor wafer, which is undesirable.

[0005] The present invention aims to provide a substrate attachment apparatus, a substrate processing system, and a substrate attachment method that, even when a second support is attached to the second surface of a semiconductor wafer, can suppress the occurrence of attachment defects of the first support, while also suppressing the adhesion between the second support and the semiconductor wafer by reducing the adhesive strength between them and preventing them from sticking together firmly, thereby suppressing the generation of residue of the second adhesive on the semiconductor wafer during peeling. [Means for solving the problem]

[0006] A substrate bonding apparatus according to an aspect of the present invention comprises a bonding section in which a first support is bonded to a first surface of a semiconductor wafer via a first adhesive at a first temperature, and a second support is bonded to a second surface of the semiconductor wafer opposite to the first surface via a second adhesive, and a heating section that heats one or both of the second support and the semiconductor wafer at a second temperature lower than the first temperature.

[0007] A substrate processing system according to an aspect of the present invention includes a first support attached to a first surface of a semiconductor wafer via a first adhesive at a first temperature, an attachment section for attaching a second support to a second surface of the semiconductor wafer opposite to the first surface via a second adhesive, a heating section for heating one or both of the second support and the semiconductor wafer at a second temperature lower than the first temperature, and a grinding device for grinding the second surface of the semiconductor wafer to which the first support is attached.

[0008] A substrate bonding method according to an aspect of the present invention includes bonding a first support to a first surface of a semiconductor wafer via a first adhesive at a first temperature, and bonding a second support to a second surface of the semiconductor wafer opposite to the first surface via a second adhesive at a second temperature lower than the first temperature. [Effects of the Invention]

[0009] According to an aspect of the present invention, the adhesive strength between the second support and the semiconductor wafer is low, and strong adhesion between the two can be suppressed. As a result, when the second support is peeled off from the semiconductor wafer, the generation of residue of the second adhesive on the semiconductor wafer can be suppressed. Furthermore, since the second support is attached to the second surface of the semiconductor wafer via the second adhesive at a second temperature lower than the first temperature at which the first support was attached to the first surface of the semiconductor wafer via the first adhesive, the softening of the first adhesive during attachment of the second support to the second surface can be prevented, thereby suppressing the occurrence of poor attachment of the first support. [Brief explanation of the drawing]

[0010] [Figure 1] This figure shows an example of a substrate mounting apparatus and substrate processing system according to an embodiment. [Figure 2] This figure shows an example of a laminate. [Figure 3] This figure shows an example of a substrate mounting apparatus according to the embodiment. [Figure 4] This is a flowchart showing an example of a substrate bonding method according to the embodiment. [Figure 5]Following Figure 4, this is a flowchart showing an example of a substrate bonding method according to the embodiment. [Figure 6] This diagram shows the process of loading the first laminate into the substrate mounting device. [Figure 7] This diagram shows the first laminate sandwiched between the first and second plates. [Figure 8] This figure shows the second laminate sandwiched between the first and second plates. [Figure 9] This figure shows an example of a substrate mounting apparatus and substrate processing system related to a modified example. [Modes for carrying out the invention]

[0011] Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description. In addition, some parts of the embodiments are omitted in the drawings for clarity. Furthermore, the scale has been changed as appropriate, such as by enlarging or emphasizing some parts, so the size, shape, dimensions, etc. may differ from the actual product.

[0012] In the following figures, directions will be explained using the XYZ Cartesian coordinate system. In this XYZ Cartesian coordinate system, the plane parallel to the horizontal plane is defined as the XY plane. In this XY plane, the direction parallel to the transport direction of the semiconductor wafer W or the stack 200 containing the semiconductor wafer W is defined as the X direction, and the direction perpendicular to the X direction is defined as the Y direction. The direction perpendicular to the XY plane is denoted as the Z direction (height direction). In the X, Y, and Z directions, the direction indicated by the arrow in the figure is the + direction, and the direction opposite to the direction indicated by the arrow is the - direction.

[0013] <Substrate mounting equipment, substrate processing system> A substrate mounting apparatus 5 and a substrate processing system 1 according to an embodiment will be described. Figure 1 is a diagram showing an example of a substrate mounting apparatus 5 and a substrate processing system 1 according to an embodiment. The substrate processing system 1 is configured to include the substrate mounting apparatus 5. The substrate processing system 1 performs the following: placing a first support 100 on the first surface Sa of a semiconductor wafer W, attaching the first support 100 to the semiconductor wafer W, grinding the second surface Sb opposite to the first surface Sa, placing a second support 110 on the second surface Sb, and attaching the second support 110 to the second surface Sb. The semiconductor wafer W (see Figure 2) is, for example, a circular substrate in a plan view (viewed from the Z direction). Circuit electrodes, electronic circuits, etc. are formed on the first surface Sa (see Figure 2) of the semiconductor wafer W.

[0014] The first support 100 and the second support 110 (see Figure 2) are plate-like bodies used to support the semiconductor wafer W. The first support 100 and the second support 110 only need to have the strength necessary to prevent damage or deformation of the semiconductor wafer W during processes such as thinning, transport, and mounting of the semiconductor wafer W. For example, the first support 100 and the second support 110 can be made of glass or silicon wafer.

[0015] The first support 100 and the second support 110 may be made of the same material, or they may be made of different materials. The first support 100 and the second support 110 are, for example, circular in a plan view (viewed from the Z direction). The first support 100 and the second support 110 may have the same diameter as the semiconductor wafer W, a larger diameter than the semiconductor wafer W, or a smaller diameter than the semiconductor wafer W. Furthermore, the first support 100 and the second support 110 may have the same thickness, or they may have different thicknesses.

[0016] As shown in FIG. 1, the substrate processing system 1 includes a transfer device 2, a grinding device (polishing device) 3, a stacking device 4, a substrate attaching device 5, and a control device C. The operations of each device in the substrate processing system 1 are centrally controlled by the control device C. However, the operations of each device in the substrate processing system 1 may be manually performed, for example, by an operator's operation, instead of being controlled by the control device C.

[0017] The transfer device 2 transfers a semiconductor wafer W or a laminate 200 (see FIG. 2) including the semiconductor wafer W. For example, the transfer device 2 transfers the laminate 200 between the stacking device 4 and the substrate attaching device 5. The transfer device 2 transfers the laminate 200 between the substrate attaching device 5 and the grinding device 3. The transfer device 2 transfers the laminate 200 between the grinding device 3 and the stacking device 4. The transfer device 2 can apply any configuration capable of transferring the semiconductor wafer W or the laminate 200. For example, the transfer device 2 may adopt a configuration in which a robot arm is used to adsorb and transfer the upper surface side or the lower surface side of the semiconductor wafer W or the laminate 200. Note that different (separate) transfer mechanisms may be used for the first laminate 200A and the second laminate 200B, which will be described later, in the transfer device 2.

[0018] The grinding device 3 grinds (polishes) the second surface Sb of the semiconductor wafer W in the laminate 200 to thin the semiconductor wafer W to a predetermined thickness (make it thinner). For example, the grinding device 3 is fed with the laminate 200 to be ground by the transfer device 2. The grinding device 3 grinds the second surface Sb of the semiconductor wafer W, which is the back surface of the transferred laminate 200, using, for example, a grinding pad (polishing pad, grinder). This grinding process is performed after the first support 100 is attached to the first surface Sa of the semiconductor wafer W. Details of the grinding device 3 will be described later.

[0019] The stacking apparatus 4 stacks the first surface Sa of the semiconductor wafer W and the adhesive surface 100a of the first support 100 in the vertical direction via the first adhesive 50 to form a laminate 200 (hereinafter referred to as "first laminate 200A"). Figure 2(A) shows an example of the first laminate 200A. The first surface Sa of the semiconductor wafer W has, for example, circuit electrodes, electronic circuits, etc., formed on it. The first adhesive 50 is applied in advance to at least one of the first surface Sa of the semiconductor wafer W and the adhesive surface 100a of the first support 100. Therefore, in the first laminate 200A, when the first support 100 is stacked on the first surface Sa of the semiconductor wafer W, a layer of the first adhesive 50 is formed between the first surface Sa of the semiconductor wafer W and the adhesive surface 100a of the first support 100.

[0020] Furthermore, the stacking device 4 stacks the second surface Sb of the semiconductor wafer W, which has been ground by the grinding device 3, and the adhesive surface 110a of the second support 110 in the vertical direction to form a laminate 200 (hereinafter referred to as "second laminate 200B"). Figure 2(B) shows an example of the second laminate 200B. The second adhesive 60 is provided in advance on at least one of the second surface Sb of the semiconductor wafer W and the adhesive surface 110a of the second support 110. Therefore, by stacking the second support 110 on the second surface Sb of the semiconductor wafer W, a layer of the second adhesive 60 is formed between the second surface Sb of the semiconductor wafer W and the adhesive surface 110a of the second support 110 in the second laminate 200B.

[0021] The configuration of the stacking device 4 is arbitrary, and any device capable of aligning the semiconductor wafer W with the first support 100, or aligning the semiconductor wafer W (first laminate 200A) with the second support 110, and stacking them together can be applied. In the first laminate 200A, the semiconductor wafer W and the first support 100 are weakly bonded together via the first adhesive 50 when stacked. In the second laminate 200B, the semiconductor wafer W and the second support 110 are weakly bonded together via the second adhesive 60 when stacked.

[0022] Furthermore, the stacking device 4 is arranged, for example, alongside the substrate mounting device 5. This configuration allows the first laminate 200A or the second laminate 200B formed by the stacking device 4 to be transported to the substrate mounting device 5 in a short time. In addition, the transport device 2 may include a separate transport unit for transporting the first laminate 200A or the second laminate 200B from the stacking device 4 to the substrate mounting device 5, in addition to the transport unit for transporting the semiconductor wafer W, the first support 100, or the second support 110 to the stacking device 4.

[0023] The first adhesive 50 may be, for example, a thermoplastic or thermosetting adhesive that dissolves at a temperature of 1 or higher, and may include adhesives containing various adhesive materials known in the field, such as acrylic, novolac, epoxy, hydrocarbon, polyimide, and elastomer adhesives, as well as thermoplastic resists and resists that become thermoplastic after curing. The second adhesive 60 may be, for example, a thermoplastic or thermosetting adhesive that dissolves at a temperature of 2 or higher that is lower than the first temperature, and may include adhesives containing various adhesive materials known in the field as described above, as well as thermoplastic resists and resists that become thermoplastic after curing. The second adhesive 60 may be a different adhesive from the first adhesive 50, or it may be the same adhesive.

[0024] Figure 3 shows an example of a substrate mounting apparatus 5 according to an embodiment. As shown in Figures 1 and 2, the substrate mounting apparatus 5 comprises a mounting section 10, a heating section 20 (20A), and a control section 30. The substrate mounting apparatus 5 may be an open-air type that operates in the atmosphere, for example, or it may have a chamber that houses the mounting section 10 and the heating section 20. If the substrate mounting apparatus 5 has a chamber, the chamber may be configured to create a vacuum atmosphere (reduced pressure atmosphere) using a vacuum pump or the like, or a predetermined gas atmosphere may be created by supplying a predetermined gas (for example, an inert gas) into the chamber.

[0025] The bonding section 10 comprises a first plate 11, a second plate 12, and a lifting drive unit 13. The first plate 11 is on which the laminate 200, which has been brought into the substrate bonding device 5, is placed. The first plate 11 may also be equipped with a lift pin for transferring the laminate 200 to and from the transport device 2. This lift pin may support the laminate 200 at its upper end, rise when the laminate 200 is transferred, and move up and down so as to retract into the first plate 11 when the laminate 200 is pressed. The first plate 11 is circular in shape with an outer diameter larger than that of the laminate 200 in plan view. However, the first plate 11 is not limited to being circular in shape, and may be rectangular (square, rectangular), elliptical, oblong, etc.

[0026] The first plate 11 has a support plate 11a and a base plate 11b. A heating section 20 is provided between the support plate 11a and the base plate 11b. The first plate 11 is supported by support columns 14 provided on the lower side of the support plate 11a. The support plate 11a is a plate-like body formed from a material such as metal, resin, or ceramics. Multiple support columns 14 are arranged on the lower side of the support plate 11a and support the support plate 11a on the base B of the substrate mounting device 5 with high rigidity. Multiple support columns 14 are arranged, for example, in the central part of the lower surface of the support plate 11a and in multiple locations surrounding the central part, so as to distribute and receive the pressing force received by the support plate 11a in a balanced manner.

[0027] The laminate 200 is placed on the upper surface of the base plate 11b. The upper surface of the base plate 11b is the contact surface with the laminate 200. Therefore, it is preferable that the upper surface of the base plate 11b has high flatness and low surface roughness (or is mirror-like). For example, the base plate 11b is a ceramic plate formed in the shape of a plate out of ceramics. However, the base plate 11b is not limited to a ceramic plate, and may be a plate made of metal or resin. The heating section 20 will be described later along with the heating section 20A of the second plate 12.

[0028] The second plate 12 is positioned directly above the first plate 11. The second plate 12 is circular in shape with an outer diameter larger than that of the laminate 200 in a plan view. However, the second plate 12 is not limited to being circular in shape; for example, it may be rectangular (square, rectangular), elliptical, oblong, etc. Also, the second plate 12 is not limited to being the same shape as the first plate 11; for example, its outer diameter may be larger than that of the first plate 11, or it may have a different shape from the first plate 11.

[0029] The second plate 12 has a support plate 12a and a base plate 12b. A heating section 20A may be provided between the support plate 12a and the base plate 12b. The second plate 12 is supported in a suspended state by a lifting shaft 13a provided on the upper side of the support plate 12a. The lifting shaft 13a moves up and down by driving a lifting drive unit 13. The second plate 12 moves up and down together with the lifting shaft 13a as the lifting shaft 13a moves up and down.

[0030] In the example shown in Figure 3, one lifting shaft 13a is provided in the central part of the upper surface of the support plate 12a, but the configuration is not limited to this. Multiple lifting shafts 13a may be provided on the upper surface of the support plate 12a. In this case, the multiple lifting shafts 13a may be provided in the central part of the upper surface of the support plate 12a and in multiple locations surrounding the central part, so as to apply a balanced pressing force to the second plate 12. Furthermore, when multiple lifting shafts 13a are provided, each of the multiple lifting shafts 13a may be provided with its own lifting drive unit 13, or a single lifting drive unit 13 may raise and lower all of the multiple lifting shafts 13a together.

[0031] The support plate 12a is a plate-shaped body formed from a material such as metal, resin, or ceramics. The base plate 12b's lower surface contacts the laminate 200 when the second plate 12 is lowered. The lower surface of the base plate 12b may be flat, or it may be a convex shape that slopes from the center of the lower surface to the outer edge. For example, the base plate 12b may be a ceramic plate formed in the shape of a ceramic. However, the base plate 12b is not limited to a ceramic plate and may be a plate made of metal or resin.

[0032] The second plate 12 descends onto the lifting drive unit 13, pressing the laminate 200 placed on the first plate 11 downwards. The pressing force on the laminate 200 is preset, and the control unit 30 controls the lifting drive unit 13 to press the laminate 200 with the preset pressing force. The laminate 200 is sandwiched between the first plate 11 and the second plate 12 by the predetermined pressing force, and under the temperature conditions of the heating units 20 and 20A described later, the semiconductor wafer W and the first support 100 (or the semiconductor wafer W and the second support 110) are bonded together.

[0033] The heating units 20 and 20A heat the laminate 200. The heating units 20 and 20A are, for example, hot plates having a heating mechanism (heat source) such as an electric heating wire inside. In the example shown in Figure 2, the heating unit 20 is provided on the first plate 11 and the heating unit 20A is provided on the second plate 12. However, the configuration is not limited to this, and a configuration in which either the heating unit 20 or 20A is not provided is also possible. The heating units 20 and 20A heat the first laminate 200A, which is sandwiched between the first plate 11 and the second plate 12, to a first temperature. With this configuration, in the first laminate 200A, the first adhesive 50 melts due to the heat of the first temperature, thereby bonding the first surface Sa of the semiconductor wafer W and the adhesive surface 100a of the first support 100. For example, the first temperature is preferably 160°C or higher, more preferably 175°C or higher, and even more preferably 200°C or higher. As the first adhesive 50, for example, a resist containing a thermoplastic hydrocarbon resin is used.

[0034] Furthermore, the heating unit 20 heats the second laminate 200B, which is sandwiched between the first plate 11 and the second plate 12, to a second temperature. With this configuration, the second adhesive 60 in the second laminate 200B melts due to the heat of the second temperature, thereby bonding the second surface Sb of the semiconductor wafer W to the adhesive surface 110a of the second support 110. Here, the second temperature is lower than the first temperature. Therefore, even if the second laminate 200B is heated to the second temperature, the first adhesive 50 does not melt because it has not reached the first temperature. The second temperature is, for example, between 40°C and 150°C. As the second adhesive 60, for example, a resist containing an epoxy resin that has thermoplastic properties after curing is used.

[0035] The control unit 30 controls the operation of the lifting drive unit 13 and the heating units 20 and 20A. The control unit 30 controls the heating temperature of the heating units 20 and 20A, i.e., the temperature at which the laminate 200 is heated. For example, the control unit 30 may include a processor such as a CPU (Central Processing Unit) or MPU (Micro Processing Unit) and non-volatile or volatile semiconductor memory (e.g., RAM (Random Access Memory), ROM (Read Only Memory), flash memory, EPROM (Erasable Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read Only Memory)). For example, the control unit 30 may be a microcontroller such as an MCU. Alternatively, the control unit 30 may be configured as part of the control device C of the substrate processing system 1.

[0036] <Method for mounting the circuit board> Next, a substrate bonding method according to the embodiment will be described. Figure 4 is a flowchart showing an example of a substrate bonding method according to the embodiment. Figure 5 is a flowchart showing an example of a substrate bonding method according to the embodiment, following Figure 4. The substrate bonding method shown in Figures 4 and 5 is executed, for example, by instructions from the control unit 30 or the control device C of the substrate processing system 1. Figures 6 to 8 show examples of the operation of the substrate bonding apparatus 5. Note that in Figures 6 to 8, some descriptions have been simplified to make the movement of each part easier to understand.

[0037] First, as shown in Figure 4, the semiconductor wafer W and the first support 100 are stacked to form the first laminate 200A (step S01). Step S01 is performed by the stacking device 4. Prior to step S01, the first adhesive 50 is applied to one or both of the first surface Sa of the semiconductor wafer W and the adhesive surface 100a of the first support 100, for example, by a coating device. The first adhesive 50 is applied to the entire surface of the first surface Sa of the semiconductor wafer W or the adhesive surface 100a of the first support 100, but it may also be applied periodically or discretely to the first surface Sa or the adhesive surface 100a. After the first adhesive 50 is applied, the semiconductor wafer W and the first support 100 are each transported to the stacking device 4 by the transport device 2.

[0038] The stacking device 4 forms a first laminate 200A by stacking the first surface Sa of the semiconductor wafer W and the adhesive surface 100a of the first support 100 in the vertical direction via the first adhesive 50. For example, the stacking device 4 aligns the first support 100 that was previously brought in, and then raises and holds the aligned first support 100. At this time, the first support 100 is held so that the adhesive surface 100a faces downward. Next, the semiconductor wafer W is brought into the stacking device 4 by the transport device 2. At this time, the semiconductor wafer W is brought into the stacking device 4 so that the first surface Sa of the semiconductor wafer W faces upward.

[0039] The stacking device 4 aligns the incoming semiconductor wafer W. After aligning the semiconductor wafer W, the stacking device 4 lowers the first support 100 or raises the semiconductor wafer W to stack the first surface Sa of the semiconductor wafer W and the adhesive surface 100a of the first support 100 vertically via the first adhesive 50, thereby forming the first laminate 200A. Once the first laminate 200A is formed, the first laminate 200A is transported to the substrate mounting device 5 by the transport device 2 (step S02).

[0040] Figure 6 shows the state in which the first laminate 200A is being transported into the substrate mounting device 5. In step S02, as shown in Figure 6, the transport device 2 transports the first laminate 200A, for example, by adsorbing its upper or lower surface, and moves the first laminate 200A into the substrate mounting device 5. Subsequently, the transport device 2 places the first laminate 200A onto the first plate 11. The transport device 2 lowers the first laminate 200A and places it on the base plate 11b of the first plate 11. If the first plate 11 is equipped with lift pins, the transport device 2 places the first laminate 200A over the upper end of the lift pins. Subsequently, the lift pins lower, and the first laminate 200A is placed on the base plate 11b.

[0041] Next, the first laminate 200A is heated to a first temperature (step S03). In step S03, the control unit 30 drives the heating units 20 and 20A to heat the first laminate 200A to a first temperature. The first temperature is set according to the first adhesive 50. For example, the first adhesive 50 and the first temperature are associated and stored in a memory unit (not shown) provided in the control unit 30. The control unit 30 acquires information on the first adhesive 50 being used and obtains the first temperature of the first adhesive 50 from the memory unit. The control unit 30 controls the heating units 20 and 20A based on the value output from the temperature sensor (not shown) so that the acquired first temperature is achieved. Note that before step S03, preheating may be performed by heating the first plate 11 and the second plate 12 to, for example, the first temperature using the heating units 20 and 20A.

[0042] Next, the semiconductor wafer W and the first support 100 are attached (step S04). Figure 7 shows the state in which the first laminate 200A is sandwiched between the first plate 11 and the second plate 12. In step S04, the substrate attachment apparatus 5 attaches the first surface Sa of the semiconductor wafer W and the adhesive surface 100a of the first support 100 at a first temperature, as shown in Figure 7. In step S04, the control unit 30 drives the lifting drive unit 13 to lower the second plate 12 together with the lifting shaft 13a, and presses the first laminate 200A on the first plate 11 downward with a predetermined pressing force.

[0043] In other words, the first laminate 200A is sandwiched between the base plate 11b of the first plate 11 and the base plate 12b of the second plate 12 with a predetermined pressing force. At this time, the first laminate 200A is heated to a first temperature by the heating units 20 and 20A. As a result, the first adhesive 50 is heated to a first temperature and melted via the first support 100 and the semiconductor wafer W, and the semiconductor wafer W and the first support 100 are bonded together by the pressing force of the second plate 12. The pressing time by the second plate 12 is preset according to the first adhesive 50 or the first temperature. The control unit 30 determines whether a preset time has elapsed using a timer (not shown) or the like.

[0044] Next, the first laminate 200A is discharged from the substrate mounting device 5 by the transport device 2 (step S05). In step S05, the transport device 2 lifts the first laminate 200A from the first plate 11 while adhering to the upper or lower surface of the first laminate 200A, and then discharges it from the substrate mounting device 5. Subsequently, the first laminate 200A is transported to the grinding device 3 by the transport device 2.

[0045] The grinding device 3 grinds the semiconductor wafer W of the first laminate 200A (step S06). In step S06, the grinding device 3 grinds the second surface Sb of the semiconductor wafer W of the first laminate 200A to thin the semiconductor wafer W. The grinding device 3 comprises, for example, a shaft, a rotating head, and a grinding pad. The shaft is rotatable about an axis of rotation parallel to the vertical by a drive unit (not shown). The rotating head is provided at the lower end of the shaft and rotates together with the shaft. The grinding pad is detachably mounted on the lower surface of the rotating head.

[0046] The first laminate 200A is positioned with the second surface Sb of the semiconductor wafer W facing the grinding pad. The grinding apparatus 3 rotates the grinding pad mounted on the rotating head around the axis of the rotation shaft, and gradually lowers the grinding pad while moving it horizontally relative to the first laminate 200A. The semiconductor wafer W of the first laminate 200A is ground by the grinding pad and formed to the desired thickness. At this time, since the semiconductor wafer W is attached to the first support 100 by the first adhesive 50, cracking and other damage are suppressed during grinding. The amount of grinding of the semiconductor wafer W is set by the amount the grinding pad is lowered.

[0047] Next, once the grinding of the semiconductor wafer W by the grinding device 3 is complete, the transport device 2 unloads the ground first laminate 200A from the grinding device 3 and loads it into the stacking device 4. The transport device 2 also loads the second support 110 into the stacking device 4. Subsequently, the semiconductor wafer W of the first laminate 200A and the second support 110 are stacked to form the second laminate 200B (step S07). Step S07 is performed by the stacking device 4. Prior to step S07, the second adhesive 60 is applied to one or both of the second surface Sb of the semiconductor wafer W and the adhesive surface 110a of the second support 110 using a coating device. The second adhesive 60 is applied periodically or discretely to the second surface Sb of the semiconductor wafer W or the adhesive surface 110a of the second support 110, but it may also be applied to the entire surface of the second surface Sb or the adhesive surface 110a. After the second adhesive 60 is applied, the first laminate 200A and the second support 110 are each transported to the stacking device 4 by the transport device 2.

[0048] The stacking device 4 forms the second laminate 200B by stacking the second surface Sb of the semiconductor wafer W and the adhesive surface 110a of the second support 110 in the vertical direction via the second adhesive 60. For example, the stacking device 4 aligns the second support 110 that was previously brought in, and then raises and holds the aligned second support 110. At this time, the second support 110 is held so that the adhesive surface 110a faces downward. Next, the first laminate 200A is brought into the stacking device 4 by the transport device 2. At this time, the first laminate 200A is brought into the stacking device 4 so that the second surface Sb of the semiconductor wafer W of the first laminate 200A faces upward.

[0049] The stacking device 4 aligns the first laminate 200A that has been brought in. After aligning the first laminate 200A, the stacking device 4 lowers the first support 100 or raises the first laminate 200A to form the second laminate 200B by stacking the second surface Sb of the semiconductor wafer W and the adhesive surface 110a of the second support 110 in the vertical direction via the second adhesive 60. Once the second laminate 200B is formed, the second laminate 200B is brought into the substrate mounting device 5 by the transport device 2 (step S08).

[0050] In step S08, the transport device 2 transports the second laminate 200B while adhering to its upper or lower surface, causing the second laminate 200B to enter the substrate mounting device 5. Subsequently, the transport device 2 lowers the second laminate 200B and places it on the base plate 11b of the first plate 11.

[0051] If the first plate 11 is equipped with a lift pin, the conveying device 2 places the second laminate 200B over the upper end of the lift pin. Subsequently, the lift pin descends, and the second laminate 200B is placed on the base plate 11b. In the above description, the second laminate 200B is placed on the first plate 11 with the second support 110 on top, but it may also be placed on the first plate 11 with the first support 100 on top.

[0052] Next, the second laminate 200B is heated to a second temperature (step S09). In step S09, the control unit 30 drives the heating units 20 and 20A to heat the first laminate 200A to a second temperature lower than the first temperature. The second temperature is set according to the second adhesive 60. For example, the second adhesive 60 and the second temperature are stored in a memory unit (not shown) provided in the control unit 30. The control unit 30 acquires information on the second adhesive 60 being used and obtains the second temperature of the second adhesive 60 from the memory unit. The control unit 30 controls the heating units 20 and 20A based on the value output from the temperature sensor (not shown) so that the acquired second temperature is achieved. Note that before step S09, preheating may be performed by the heating units 20 and 20A to heat the first plate 11 and the second plate 12 to, for example, the second temperature.

[0053] Next, the semiconductor wafer W and the second support 110 are attached (step S10). Figure 8 shows the state in which the second laminate 200B is sandwiched between the first plate 11 and the second plate 12. Step S 10 In step S10, the substrate bonding apparatus 5 bonds the second surface Sb of the semiconductor wafer W to the adhesive surface 110a of the second support 110 at a second temperature, as shown in Figure 8.

[0054] In other words, the second laminate 200B is sandwiched between the base plate 11b of the first plate 11 and the base plate 12b of the second plate 12 with a predetermined pressing force. At this time, the second laminate 200B is heated to a second temperature by the heating units 20 and 20A. As a result, the second adhesive 60 is heated to a second temperature and melted via the first support 100, the second support 110, and the semiconductor wafer W, and the semiconductor wafer W and the second support 110 are bonded together by the pressing force of the second plate 12. Furthermore, since the second temperature is lower than the first temperature, the first adhesive 50 does not soften or melt even when heated to the second temperature. Therefore, the first adhesive 50 can maintain its adhesive strength between the semiconductor wafer W and the first support 100. The time for pressing by the second plate 12 is preset according to the second adhesive 60 or the second temperature. The control unit 30 determines whether a preset time has elapsed using a timer (not shown) or the like. Furthermore, if the second adhesive 60 and the first adhesive 50 are the same adhesive, the semiconductor wafer W and the second support 110 are bonded at a second temperature lower than the first temperature used when bonding the semiconductor wafer W and the first support 100. As a result, similar to the above, softening or melting of the first adhesive 50 is suppressed, and defects in the bonding of the first support 100 to the semiconductor wafer W can be suppressed.

[0055] Next, as shown in Figure 5, the second laminate 200B is discharged from the substrate mounting device 5 by the transport device 2 (step S11). In step S11, the transport device 2 lifts the second laminate 200B from the first plate 11 while adhering to the upper or lower surface of the second laminate 200B, and then discharges it from the substrate mounting device 5.

[0056] Next, after step S11, as a first peeling step, the adhesion of the first adhesive 50 to the second laminate 200B is reduced or the first adhesive 50 is dissolved by light irradiation or immersion in a specific solvent, and the first support 100 is peeled off from the second laminate 200B (step S12). The first peeling step in step S12 is performed by, for example, a light irradiation device, an immersion device, or a peeling device. After step S12, for example, a dicing step is performed in which the semiconductor wafer W is cut into chips. This dicing step is performed by, for example, a dicing device. Next, after the first peeling step, as a second peeling step, the second support 110 is peeled off from the semiconductor wafer W (chip) by physically pulling the semiconductor wafer W (chip) away from the second support 110 (step S13). The second peeling step in step S13 is performed by, for example, physically pulling the semiconductor wafer W (chip) away from the second support 110 by a picking device or the like. In other words, the second support 110 is physically peeled away from the semiconductor wafer W. Furthermore, because the adhesion between the second support 110 and the semiconductor wafer W is low, the formation of residue of the second adhesive 60 on the semiconductor wafer W (chip) can be suppressed. The series of processes is completed when the semiconductor wafer W (chip) is physically peeled away from the second support 110.

[0057] As a comparative example, when the heating temperature is set to 160°C or higher, which corresponds to the first temperature, when the second support 110 is attached to the second surface Sb of the semiconductor wafer W, the second support 110 and the semiconductor wafer W adhere firmly, and in the second peeling step described above, residue of the second adhesive 60 may be generated on the semiconductor wafer W. In this embodiment, the semiconductor wafer W and the second support 110 are attached at a lower second temperature in the range of 40°C to 150°C. Therefore, compared to the comparative example described above, the adhesive strength between the second support 110 and the semiconductor wafer W is lower, suppressing firm adhesion. As a result, it is possible to suppress the generation of residue of the second adhesive 60 on the semiconductor wafer W in the second peeling step S13 described above.

[0058] Thus, according to this embodiment, the second support 110 is attached to the second surface Sb of the semiconductor wafer W via the second adhesive 60 at a second temperature lower than the first temperature at which the first support 100 is attached to the first surface Sa of the semiconductor wafer W via the first adhesive 50. This prevents the first adhesive 50 from softening when the second support 110 is attached to the second surface Sb, thereby suppressing defects in the attachment of the first support 100.

[0059] <Variation> A modified example of a substrate mounting apparatus 5A and a substrate processing system 1A will be described. Figure 9 shows an example of a modified example of a substrate mounting apparatus 5A and a substrate processing system 1A. In the above-described embodiment, the substrate processing system 1 is described as a configuration in which the overlapping apparatus 4 and the substrate mounting apparatus 5 are included as separate devices, but it is not limited to this configuration. The functions of the overlapping apparatus 4 and the functions of the substrate mounting apparatus 5 may be realized in a single device. In Figure 9, components similar to those in the above-described embodiment are denoted by the same reference numerals, and their descriptions are omitted or simplified.

[0060] As shown in Figure 9, the substrate processing system 1A comprises a transport device 2, a grinding device (polishing device) 3, a substrate mounting device 5A, and a control device C. The substrate mounting device 5A comprises a mounting section 10, a heating section 20 (20A), a control unit 30, and an overlapping section 40. In other words, the substrate mounting device 5A includes an overlapping section 40 that has the same function as the overlapping device 4 of the substrate processing system 1 described above.

[0061] The overlapping section 40, for example, supports the first support 100, which has been previously loaded into the substrate mounting apparatus 5A, in the space between the first plate 11 and the second plate 12. Subsequently, the semiconductor wafer W, which has been loaded, is raised by the lift pins to overlap the semiconductor wafer W and the first support 100 to form the first laminate 200A. After that, the lift pins are lowered to place the first laminate 200A on the first plate 11, and then the second plate 12 is lowered to bond the semiconductor wafer W and the first support 100 at the first temperature.

[0062] Furthermore, the overlapping section 40 supports the second support 110, which has been previously brought into the substrate bonding apparatus 5A, in the space between the first plate 11 and the second plate 12. Subsequently, the first laminated body 200A, which has been brought in, is raised by the lift pins to overlap the semiconductor wafer W of the first laminated body 200A with the second support 110 to form the second laminated body 200B. After that, the lift pins are lowered to place the second laminated body 200B on the first plate 11, and then the second plate 12 is lowered to bond the semiconductor wafer W and the second support 110 at the second temperature.

[0063] Thus, in this modified example, as in the embodiment described above, the second support 110 is attached to the second surface Sb of the semiconductor wafer W via the second adhesive 60 at a second temperature lower than the first temperature, thus preventing the first adhesive 50 from softening when the second support 110 is attached to the second surface Sb. Furthermore, in the substrate processing system 1A according to this modified example, the substrate attachment device 5A is equipped with an overlapping section 40, eliminating the need for the overlapping device 4 in the embodiment described above, thus reducing the space occupied by the substrate processing system 1A.

[0064] Although embodiments and modifications have been described above, the technical scope of the present invention is not limited to the embodiments and modifications described above, and various modifications are possible without departing from the spirit of the invention. Furthermore, it will be apparent to those skilled in the art that various modifications or improvements can be made to the embodiments and modifications described above. Such modified or improved forms are also included in the technical scope of the present invention. In addition, one or more of the requirements described in the embodiments and modifications described above may be omitted. Furthermore, the requirements described in the embodiments and modifications described above can be combined as appropriate. In addition, the execution order of each operation shown in the embodiments and modifications described above can be performed in any order, as long as the result of the previous operation is not used in the subsequent operation. Furthermore, even if "first," "next," etc. are used for convenience when describing the operations in the embodiments and modifications described above, it is not essential to perform them in this order. [Explanation of Symbols]

[0065] 1. 1A... PCB processing system 3. Grinding device 5, 5A... PCB mounting device 10...Attachment area 11...First Plate 12...Second Plate 20, 20A...Heating part 50...First adhesive 60...Second adhesive 100...1st support 100a...adhesive surface 110...Second support 110a...Adhesive surface W···Geometric wafer

Claims

1. A first support is attached to the first surface of a semiconductor wafer via a first adhesive at a first temperature, and a second support is attached to the second surface of the semiconductor wafer opposite to the first surface via a second adhesive. The device comprises a heating unit that heats one or both of the second support and the semiconductor wafer to a second temperature lower than the first temperature, A substrate bonding apparatus wherein the first adhesive dissolves at a temperature of the first temperature or higher, and the second adhesive dissolves at a temperature of the second temperature or higher, which is lower than the first temperature.

2. The substrate mounting apparatus according to claim 1, wherein the first surface of the semiconductor wafer is provided with circuit electrodes.

3. The bonding portion comprises a first plate that abuts against the surface of the first support opposite to the surface on which the semiconductor wafer is bonded, and a second plate that abuts against the surface of the second support opposite to the surface on which the semiconductor wafer is bonded. The substrate mounting apparatus according to claim 1 or claim 2, wherein the heating section is provided on one or both of the first plate and the second plate.

4. The substrate bonding apparatus according to claim 1 or claim 2, wherein the second adhesive is a thermoplastic resist.

5. The substrate bonding apparatus according to claim 1 or claim 2, wherein the second adhesive is periodically provided on the bonding surface of the second support.

6. The substrate mounting apparatus according to claim 1 or claim 2, wherein the second adhesive is different from the first adhesive.

7. The substrate bonding apparatus according to claim 1 or claim 2, wherein the bonding portion performs bonding of the second surface of the semiconductor wafer and the second support under atmospheric pressure.

8. The substrate mounting apparatus according to claim 1 or claim 2, wherein the second temperature is 40°C to 150°C.

9. The substrate bonding apparatus according to claim 1 or claim 2, wherein the heating unit heats one or both of the second support and the semiconductor wafer for a certain period of time before bonding the second surface of the semiconductor wafer and the second support.

10. The substrate bonding apparatus according to claim 9, wherein the heating unit heats the semiconductor wafer at the second temperature for a certain period of time before bonding the second surface of the semiconductor wafer to the second support.

11. The bonding portion is capable of bonding the first support to the first surface of the semiconductor wafer via the first adhesive. The substrate mounting apparatus according to claim 1 or claim 2, wherein the heating unit heats one or both of the first support and the semiconductor wafer to a first temperature.

12. The substrate bonding apparatus according to claim 11, wherein the first adhesive is provided over the entire surface of the bonding surface of the first support.

13. A grinding apparatus for grinding the second surface of the semiconductor wafer to which the first support is attached, A substrate processing system comprising a substrate mounting apparatus according to claim 1 or claim 2.

14. The invention includes attaching a first support to a first surface of a semiconductor wafer via a first adhesive at a first temperature, and attaching a second support to a second surface of the semiconductor wafer opposite to the first surface via a second adhesive at a second temperature lower than the first temperature. A method for attaching a substrate, wherein the first adhesive dissolves at a temperature of the first temperature or higher, and the second adhesive dissolves at a temperature of the second temperature or higher, which is lower than the first temperature.

Images