Semiconductor device and method for manufacturing a semiconductor device

Abstract

This semiconductor device includes a semiconductor element, a first lead, a second lead, and a first wire. The rear surface of a bonding pad is disposed on the side on which the main surface of a die pad is located with respect to the rear surface of the die pad in a z direction. The first wire is bonded to a first electrode and the main surface of the bonding pad. A bonding pad part has only a single first portion. The first portion extends to the rear surface of the bonding pad, is surrounded by the rear surface of the bonding pad when viewed in the z direction, and includes a portion that is present at a different location than the rear surface of the bonding pad in the z direction.

Claims

1. A semiconductor element having a semiconductor element body and a first electrode disposed on the element body, The first lead on which the aforementioned semiconductor element is mounted, Second lead, The semiconductor element and the second lead are electrically connected by a first wire, The first lead includes a die pad portion having a die pad main surface and a die pad back surface that face opposite each other in the thickness direction, The semiconductor element is mounted on the main surface of the die pad, The second lead includes a bonding pad portion having a bonding pad main surface facing the same side as the die pad main surface in the thickness direction and a bonding pad back surface facing the opposite side from the bonding pad main surface. The back surface of the bonding pad is positioned on the side where the main surface of the die pad is located relative to the back surface of the die pad in the thickness direction. The first wire is bonded to the first electrode and the main surface of the bonding pad. The bonding pad portion has only one first part, which is connected to the back surface of the bonding pad and surrounded by the back surface of the bonding pad when viewed in the thickness direction, and includes a portion that is located at a position different from the back surface of the bonding pad in the thickness direction. A semiconductor device wherein the bonding pad main surface is located on the side of the die pad main surface in the thickness direction that the die pad main surface faces.

2. The semiconductor device according to claim 1, wherein the bonding pad main surface is located on the side of the element body in the thickness direction toward the die pad main surface.

3. The semiconductor device according to claim 1 or 2, wherein the first part is located on the side facing the die pad main surface in the thickness direction from the die pad main surface.

4. The semiconductor device according to claim 3, wherein the first part is located on the side of the element body in the thickness direction toward the main surface of the die pad.

5. The first wire has a bonding portion joined to the main surface of the bonding pad, The semiconductor device according to any one of claims 1 to 4, wherein, when viewed in the thickness direction, at least a portion of the bonding portion and the first portion overlap each other.

6. The semiconductor device according to claim 5, wherein the bonding portion is a second bonding portion.

7. The semiconductor device according to any one of claims 1 to 6, wherein the first part is a recess having an open edge on the back surface of the bonding pad.

8. The semiconductor device according to claim 7, wherein the portion of the recess other than the opening edge is located inside the opening edge when viewed in the thickness direction.

9. The semiconductor device according to claim 8, wherein the recess includes a first surface that is inclined to move away from the back surface of the bonding pad as it moves away from the back surface of the bonding pad in the thickness direction.

10. The semiconductor device according to claim 9, wherein the first angle that the first surface makes with a plane perpendicular to the thickness direction is 25° or more and 50° or less.

11. The semiconductor device according to claim 9 or 10, wherein the first surface is annular when viewed in the thickness direction.

12. The semiconductor device according to claim 9 or 10, wherein the recess is inclined to move away from the back surface of the bonding pad as it moves away from the back surface of the bonding pad in the thickness direction, and includes a second surface positioned differently from the first surface in the thickness direction.

13. The semiconductor device according to any one of claims 1 to 6, wherein the first part is a protrusion that protrudes from the back surface of the bonding pad.

14. The semiconductor device according to any one of claims 1 to 13, further comprising a sealing resin covering the semiconductor element, the first wire, and at least a portion of the first lead and the second lead.

15. The semiconductor device according to claim 14, wherein the first part is covered with the sealing resin.

16. The semiconductor device according to claim 15, wherein the second lead includes a terminal portion that is exposed from the sealing resin and is located in the thickness direction on the side facing the back surface of the bonding pad rather than the bonding pad portion.

17. The semiconductor device according to claim 16, wherein, when viewed in a direction perpendicular to the thickness direction, at least a portion of the terminal portion and the die pad portion overlap each other.

18. The semiconductor device according to claim 17, wherein the second lead includes a connecting portion which is interposed between the bonding pad portion and the terminal portion and has a bent shape.

19. A step of preparing a first lead including a die pad portion having a die pad main surface and a die pad back surface facing opposite directions in the thickness direction, and a second lead including a bonding pad portion having a bonding pad main surface facing the same side as the die pad main surface in the thickness direction and a bonding pad back surface facing the opposite side from the bonding pad main surface, A step of mounting a semiconductor element having an element body containing a semiconductor and a first electrode disposed on the element body onto the die pad main surface, The process includes a step of joining the first electrode and the die pad main surface to the first wire, The back surface of the bonding pad is positioned on the side where the main surface of the die pad is located relative to the back surface of the die pad in the thickness direction. The bonding pad portion has only one first part, which is connected to the back surface of the bonding pad and surrounded by the back surface of the bonding pad when viewed in the thickness direction, and includes a portion that is located at a position different from the back surface of the bonding pad in the thickness direction. In the step of joining the first wire, the second lead is supported by a support such that the bonding pad main surface is positioned relative to the die pad main surface in the thickness direction, with the die pad main surface facing the bonded pad main surface. A method for manufacturing a semiconductor device, wherein the support has a support surface that contacts the back surface of the bonding pad and a second portion that engages with the first portion of the second lead.

20. The method for manufacturing a semiconductor device according to claim 19, wherein the first part is a recess having an open edge on the back surface of the bonding pad.

21. The method for manufacturing a semiconductor device according to claim 20, wherein the portion of the recess other than the opening edge is located inside the opening edge when viewed in the thickness direction.

Images