Semiconductor equipment

Abstract

A semiconductor device according to the present invention comprises: a semiconductor element having a first electrode; a conduction member having a first junction part opposing the first electrode; a junction layer interposed between the first electrode and the first junction part; and a regulating body joined to the first electrode or the first junction part. The regulating body opposes the junction layer in a direction orthogonal to the thickness direction of the semiconductor element.

Description

[Technical Field]

[0001] This disclosure relates to semiconductor devices. [Background technology]

[0002] Patent Document 1 discloses an example of a semiconductor device (power module) in which multiple semiconductor elements are bonded to a conductive layer. This semiconductor device includes multiple connecting metal members bonded to the conductive layer and the multiple semiconductor elements. This allows a large current to flow through the multiple semiconductor elements.

[0003] However, in the semiconductor device disclosed in Patent Document 1, at least one of the multiple connecting metal members may experience misalignment with respect to the electrodes of the semiconductor element to be joined. If the degree of misalignment is relatively large, the connecting metal member may overlap the gate electrode of the semiconductor element. In this case, when joining a wire to the gate electrode, the connecting metal member makes it difficult to join the wire. Therefore, a measure to suppress the misalignment of the connecting metal member with respect to the electrodes of the semiconductor element, or a measure to tolerate such misalignment even if it occurs, is desired. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2016-162773 [Overview of the project] [Problems that the invention aims to solve]

[0005] In view of the above circumstances, one of the objectives of this disclosure is to provide a semiconductor device that can suppress or tolerate misalignment of a conductive member with respect to the electrodes of a semiconductor device. [Means for solving the problem]

[0006] A semiconductor device provided by a first aspect of this disclosure comprises a semiconductor element having a first electrode, a conductive member having a first junction facing the first electrode, a bonding layer interposed between the first electrode and the first junction, and a restricting body bonded to either the first electrode or the first junction. In a direction perpendicular to the thickness direction of the semiconductor element, the restricting body faces the bonding layer.

[0007] A semiconductor device provided by a second aspect of the present disclosure comprises a semiconductor element having a first electrode, a conductive member having a first junction facing the first electrode, and a junction layer interposed between the first electrode and the first junction, wherein the first electrode has a first recess recessed in a direction perpendicular to the thickness direction of the semiconductor element, and the first junction has a second recess recessed in a direction perpendicular to the thickness direction, and the second recess overlaps the first recess when viewed in the thickness direction. [Effects of the Invention]

[0008] The semiconductor device according to this disclosure makes it possible to suppress or tolerate misalignment of the conductive member with respect to the electrodes of the semiconductor element.

[0009] Other features and advantages of this disclosure will become more apparent from the detailed description below, based on the accompanying drawings. [Brief explanation of the drawing]

[0010] [Figure 1] Figure 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] Figure 2 is a plan view of the semiconductor device shown in Figure 1. [Figure 3] Figure 3 is a plan view corresponding to Figure 2, and shows the sealing resin permeating through it. [Figure 4] Figure 4 is a bottom view of the semiconductor device shown in Figure 1. [Figure 5] Figure 5 is a front view of the semiconductor device shown in Figure 1. [Figure 6]FIG. 6 is a right side view of the semiconductor device shown in FIG. 1. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII of FIG. 3. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII of FIG. 3. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. 3. [Figure 10] FIG. 10 is a partially enlarged view of FIG. 7. [Figure 11] FIG. 11 is a partially enlarged view of FIG. 9. [Figure 12] FIG. 12 is a partially enlarged view of the first element shown in FIG. 3 and its periphery. [Figure 13] FIG. 13 is a cross-sectional view taken along line XIII-XIII of FIG. 12. [Figure 14] FIG. 14 is a partially enlarged view of the second element shown in FIG. 3 and its periphery. [Figure 15] FIG. 15 is a cross-sectional view taken along line XV-XV of FIG. 14. [Figure 16] FIG. 16 is a partially enlarged plan view of the semiconductor device according to the second embodiment of the present disclosure, enlarging the first element and its periphery and penetrating the encapsulation resin. [Figure 17] FIG. 17 is a cross-sectional view taken along line XVII-XVII of FIG. 16. [Figure 18] FIG. 18 is a partially enlarged plan view of the semiconductor device shown in FIG. 16, enlarging the second element and its periphery and penetrating the encapsulation resin. [Figure 19] FIG. 19 is a cross-sectional view taken along line XIX-XIX of FIG. 18. [Figure 20] FIG. 20 is a partially enlarged plan view of a modified example of the semiconductor device shown in FIG. 16, penetrating the encapsulation resin. [Figure 21] FIG. 21 is a cross-sectional view taken along line XXI-XXI of FIG. 20. [Figure 22] FIG. 22 is a partially enlarged plan view of the semiconductor device according to the third embodiment of the present disclosure, enlarging the first element and its periphery and penetrating the encapsulation resin. [Figure 23] Figure 23 is a partially enlarged plan view of the semiconductor device shown in Figure 22, magnifying the second element and its surroundings, and showing the sealing resin. [Figure 24] Figure 24 is a plan view of a semiconductor device according to a fourth embodiment of the present disclosure, and shows a sealant resin. [Figure 25] Figure 25 is a partially enlarged cross-sectional view along the line XXV-XXV in Figure 24. [Figure 26] Figure 26 is a partially enlarged cross-sectional view along the line XXVI-XXVI in Figure 24. [Figure 27] Figure 27 is a partially enlarged plan view of a semiconductor device according to the fifth embodiment of the present disclosure, showing the first element and its surroundings, and through which the sealing resin is visible. [Figure 28] Figure 28 is a cross-sectional view along the line XXVIII-XXVIII in Figure 27. [Figure 29] Figure 29 is a partially enlarged plan view of the semiconductor device shown in Figure 27, showing the second element and its surroundings in detail, and also showing the sealing resin. [Figure 30] Figure 30 is a cross-sectional view along the line XXX-XXX in Figure 29. [Figure 31] Figure 31 is a partially enlarged plan view of a first modified example of the semiconductor device shown in Figure 27, with the sealing resin transparent. [Figure 32] Figure 32 is a partially enlarged plan view of a second modified example of the semiconductor device shown in Figure 27, with the sealing resin transparent. [Figure 33] Figure 33 is a partially enlarged plan view of a semiconductor device according to the sixth embodiment of the present disclosure, showing the first element and its surroundings in detail, and also showing the sealing resin. [Figure 34] Figure 34 is a cross-sectional view along the line XXXIV-XXXIV in Figure 33. [Figure 35] Figure 35 is a cross-sectional view along the line XXXV-XXXV in Figure 33. [Figure 36] Figure 36 is a partially enlarged plan view of a modified example of the semiconductor device shown in Figure 33, with the sealing resin transparent. [Figure 37] Figure 37 is a partially enlarged plan view of a semiconductor device according to the seventh embodiment of the present disclosure, showing the first element and its surroundings, and also showing the sealing resin. [Figure 38] Figure 38 is a cross-sectional view along the line XXXVIII-XXXVIII in Figure 37. [Figure 39] Figure 39 is a partially enlarged plan view of a semiconductor device according to the eighth embodiment of the present disclosure, showing the first element and its surroundings, and transparent to the sealing resin. [Figure 40] Figure 40 is a cross-sectional view along the XL-XL line in Figure 39. [Modes for carrying out the invention]

[0011] The forms for implementing this disclosure will be described based on the attached drawings.

[0012] A semiconductor device A10 according to a first embodiment of the present disclosure will be described based on Figures 1 to 15. The semiconductor device A10 comprises a support member 10, a plurality of terminal leads 13, a semiconductor element 21, a conductive member 30, a pair of gate wires 41, a pair of detection wires 42, and a sealing resin 50. Here, for ease of understanding, Figure 3 shows lines that are visible through the sealing resin 50 and are indicated by dashed lines. In Figure 3, lines VIII-VIII and IX-IX are indicated by single-dash lines.

[0013] In describing semiconductor device A10, for convenience, the thickness direction of the semiconductor element 21 is referred to as the "thickness direction z". The direction perpendicular to the thickness direction z is referred to as the "first direction x". The direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y".

[0014] The semiconductor device A10 converts the DC power supply voltage applied to the first input terminal 14 and the second input terminal 16 of the multiple terminal leads 13 into AC power using a semiconductor element 21. The converted AC power is input to a power supply target such as a motor from the output terminal 15 of the multiple terminal leads 13. The semiconductor device A10 is used in power conversion circuits such as inverters.

[0015] The support member 10 is composed of the same lead frame together with a plurality of terminal leads 13. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the composition of the support member 10 and the plurality of terminal leads 13 includes copper (i.e., these members contain copper). Furthermore, the support member 10 is conductive. In the semiconductor device A10, the support member 10 includes a first die pad 10A and a second die pad 10B that are spaced apart from each other in a first direction x, as shown in Figures 3 and 7. The support member 10 has a main surface 101 and a back surface 102. The main surface 101 faces in the thickness direction z. The main surface 101 is covered with a sealing resin 50. A semiconductor element 21 is mounted on the main surface 101. Therefore, the back surface 102 faces the side opposite to the side on which the semiconductor element 21 is located in the thickness direction z. The back surface 102 is exposed from the sealing resin 50. The back surface 102 is, for example, plated with tin (Sn).

[0016] As shown in Figures 3 and 7-9, the sealing resin 50 covers the semiconductor element 21 and the conductive member 30, as well as a portion of the support member 10 (a portion of the first die pad 10A and a portion of the second die pad 10B). Furthermore, the sealing resin 50 covers a portion of each of the multiple terminal leads 13. The sealing resin 50 has electrical insulating properties. The sealing resin 50 is made of a material including, for example, black epoxy resin. As shown in Figure 2, the dimension L1 of the sealing resin 50 in the first direction x is longer than the dimension L2 of the sealing resin 50 in the second direction y. The sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a second side surface 54, a third side surface 55, a plurality of recesses 56, and grooves 57.

[0017] As shown in Figures 7 to 9, the top surface 51 faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z. As shown in Figures 7 to 9, the bottom surface 52 faces the opposite side from the top surface 51 in the thickness direction z. As shown in Figure 4, the back surface 102 of the first die pad 10A and the back surface 102 of the second die pad 10B are exposed from the bottom surface 52.

[0018] As shown in Figures 2, 4, and 5, the pair of first sides 53 are located apart from each other in a first direction x. The pair of first sides 53 face in the first direction x and extend in a second direction y. The pair of first sides 53 are connected to the top surface 51 and the bottom surface 52.

[0019] As shown in Figures 2, 4, and 6, the second side surface 54 and the third side surface 55 are located apart from each other in the second direction y. The second side surface 54 and the third side surface 55 face opposite each other in the second direction y and extend in the first direction x. The second side surface 54 and the third side surface 55 are connected to the top surface 51 and the bottom surface 52. As shown in Figure 5, multiple terminal leads 13 are exposed from the third side surface 55.

[0020] As shown in Figures 2, 4, and 5, the multiple recesses 56 are recessed from the third side surface 55 in the second direction y, and extend from the top surface 51 to the bottom surface 52 in the thickness direction z. In the first direction x, the multiple recesses 56 are individually located between the first input terminal 14 and the first detection terminal 181, between the first input terminal 14 and the second input terminal 16, between the output terminal 15 and the second input terminal 16, and between the output terminal 15 and the second detection terminal 182.

[0021] As shown in Figures 4, 5, 7, and 9, the groove 57 is recessed in the thickness direction z from the bottom surface 52 and extends along the second direction y. Both sides of the groove 57 in the second direction y connect to the second side surface 54 and the third side surface 55. The groove 57 is located between the first die pad 10A and the second die pad 10B. Viewed in the thickness direction z, the groove 57 separates the back surface 102 of the first die pad 10A from the back surface 102 of the second die pad 10B.

[0022] As shown in Figure 10, the second die pad 10B has a first seating surface 103 and a first upright surface 104. The first seating surface 103 faces the same side as the main surface 101 in the thickness direction z and is located between the main surface 101 and the back surface 102 in the thickness direction z. The first upright surface 104 faces a direction perpendicular to the thickness direction z and is connected to the first seating surface 103 and the main surface 101. The first seating surface 103 and the first upright surface 104 form a step in the second die pad 10B.

[0023] As shown in Figures 3 and 7, the semiconductor element 21 is mounted on the support member 10. In semiconductor device A10, the semiconductor element 21 includes a first element 21A and a second element 21B. The first element 21A is mounted on the main surface 101 of the first die pad 10A. The second element 21B is mounted on the main surface 101 of the second die pad 10B. The semiconductor element 21 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In addition, the semiconductor element 21 may be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of semiconductor device A10, the semiconductor element 21 is an n-channel type MOSFET with a vertical structure. The semiconductor element 21 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC). As shown in Figures 13 and 15, the semiconductor element 21 has a first electrode 211, a second electrode 212, and a gate electrode 213.

[0024] As shown in Figures 13 and 15, the first electrode 211 is located on the opposite side of the second electrode 212 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 corresponds to the source electrode of the semiconductor element 21. The first electrode 211 includes a plurality of metal plating layers. The first electrode 211 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the first electrode 211 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0025] As shown in Figures 13 and 15, the second electrode 212 faces the main surface 101 of the support member 10. A current corresponding to the power before it is converted by the semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the drain electrode of the semiconductor element 21.

[0026] As shown in Figures 13 and 15, the gate electrode 213 is located on the same side as the first electrode 211 in the thickness direction z. A gate voltage is applied to the gate electrode 213 to drive the semiconductor element 21. As shown in Figures 12 and 14, the area of ​​the gate electrode 213 is smaller than the area of ​​the first electrode 211 when viewed in the thickness direction z.

[0027] As shown in Figures 12 and 14, the first electrode 211 has a first recess 211A that is recessed in the first direction x. Viewed in the thickness direction z, the gate electrode 213 overlaps the first recess 211A.

[0028] As shown in Figures 8, 10, and 11, the die bonding layer 23 is interposed between the main surfaces 101 of the first die pad 10A and the second die pad 10B and the first electrodes 211 of the semiconductor element 21 (first element 21A and second element 21B). The die bonding layer 23 is conductive. The die bonding layer 23 is, for example, solder. Alternatively, the die bonding layer 23 may be sintered metal. The die bonding layer 23 bonds the main surface 101 of the first die pad 10A to the second electrode 212 of the first element 21A. As a result, the second electrode 212 of the first element 21A is electrically connected to the first die pad 10A. Furthermore, the die bonding layer 23 bonds the main surface 101 of the second die pad 10B to the second electrode 212 of the second element 21B. As a result, the second electrode 212 of the second element 21B is electrically connected to the second die pad 10B.

[0029] As shown in Figure 3, the multiple terminal leads 13 are located on one side of the support member 10 in the second direction y. The multiple terminal leads 13 are conductive to the semiconductor element 21. The multiple terminal leads 13 are arranged along the first direction x. The multiple terminal leads 13 include a first input terminal 14, an output terminal 15, a second input terminal 16, a first gate terminal 171, a second gate terminal 172, a first detection terminal 181, and a second detection terminal 182.

[0030] As shown in Figure 3, the first input terminal 14 includes a portion extending along the second direction y and is connected to the first die pad 10A. Therefore, the first input terminal 14 is conductive to the second electrode 212 of the first element 21A via the first die pad 10A. The first input terminal 14 is the P terminal (positive electrode) to which the DC power supply voltage to be converted is applied. The first input terminal 14 has a covered portion 14A and an exposed portion 14B. As shown in Figure 7, the covered portion 14A is connected to the first die pad 10A and is covered by the sealing resin 50. Viewed in the first direction x, the covered portion 14A is bent. As shown in Figures 2 to 5, the exposed portion 14B is connected to the covered portion 14A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 14B extends away from the first die pad 10A in the second direction y. The surface of the exposed portion 14B is, for example, tin-plated.

[0031] As shown in Figure 3, the output terminal 15 includes a portion extending along the second direction y and is connected to the second die pad 10B. Therefore, the output terminal 15 is conductive to the second electrode 212 of the second element 21B via the second die pad 10B. AC power converted by the semiconductor element 21 is output from the output terminal 15. The output terminal 15 has a covered portion 15A and an exposed portion 15B. The covered portion 15A is connected to the second die pad 10B and is covered by the sealing resin 50. Viewed in the first direction x, the covered portion 15A is bent in the same way as the covered portion 14A of the first input terminal 14. As shown in Figures 2 to 5, the exposed portion 15B is connected to the covered portion 15A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 15B extends away from the second die pad 10B in the second direction y. The surface of the exposed portion 14B is, for example, tin-plated.

[0032] As shown in Figure 3, the second input terminal 16 is located away from the first die pad 10A and the second die pad 10B in the second direction y, and between the first input terminal 14 and the output terminal 15 in the first direction x. The second input terminal 16 extends along the second direction y. The second input terminal 16 is conductive to the first electrode 211 of the second element 21B. The second input terminal 16 is the N terminal (negative electrode) to which the DC power supply voltage to be converted is applied. The second input terminal 16 has a covered portion 16A and an exposed portion 16B. As shown in Figure 9, the covered portion 16A is covered by the sealing resin 50. As shown in Figures 2 to 5, the exposed portion 16B is connected to the covered portion 16A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 16B extends away from the first die pad 10A and the second die pad 10B in the second direction y. The surface of the exposed portion 16B is, for example, tin-plated.

[0033] As shown in Figure 13, the covering portion 16A of the second input terminal 16 has a second seating surface 16C and a second upright surface 16D. The second seating surface 16C faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z, and is located below the upper surface of the covering portion 16A (the surface facing upward in Figure 13). The second upright surface 16D faces in a direction perpendicular to the thickness direction z and is connected to the second seating surface 16C and the upper surface of the covering portion 16A. The second seating surface 16C and the second upright surface 16D form a step in the covering portion 16A of the second input terminal 16.

[0034] As shown in Figure 3, the first gate terminal 171 is located away from the first die pad 10A in the second direction y and on one side of the first direction x. As shown in Figure 3, the second gate terminal 172 is located away from the second die pad 10B in the second direction y and on the other side of the first direction x. The first gate terminal 171 is conductive to the gate electrode 213 of the first element 21A. A gate voltage is applied to the first gate terminal 171 to drive the first element 21A. The second gate terminal 172 is conductive to the gate electrode 213 of the second element 21B. A gate voltage is applied to the second gate terminal 172 to drive the second element 21B.

[0035] As shown in Figure 3, the first gate terminal 171 has a covered portion 171A and an exposed portion 171B. The covered portion 171A is covered with a sealing resin 50. As shown in Figures 2 to 5, the exposed portion 171B is connected to the covered portion 171A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 171B extends away from the first die pad 10A in the second direction y. The surface of the exposed portion 171B is, for example, tin-plated.

[0036] As shown in Figure 3, the second gate terminal 172 has a covered portion 172A and an exposed portion 172B. The covered portion 172A is covered with a sealing resin 50. As shown in Figures 2 to 5, the exposed portion 172B is connected to the covered portion 172A and is exposed from the sealing resin 50. The exposed portion 172B extends away from the second die pad 10B in the second direction y. The surface of the exposed portion 172B is, for example, tin-plated.

[0037] As shown in Figure 3, the first detection terminal 181 is located away from the first die pad 10A in the second direction y, and between the first input terminal 14 and the first gate terminal 171 in the first direction x. As shown in Figure 3, the second detection terminal 182 is located away from the second die pad 10B in the second direction y, and between the output terminal 15 and the second gate terminal 172 in the first direction x. The first detection terminal 181 is conductive to the second electrode 212 of the first element 21A. A voltage corresponding to the current flowing through the second electrode 212 of the first element 21A is applied to the first detection terminal 181. The second detection terminal 182 is conductive to the second electrode 212 of the second element 21B. A voltage corresponding to the current flowing through the second electrode 212 of the second element 21B is applied to the second detection terminal 182.

[0038] As shown in Figure 3, the first detection terminal 181 has a covered portion 181A and an exposed portion 181B. The covered portion 181A is covered with a sealing resin 50. As shown in Figures 2 to 5, the exposed portion 181B is connected to the covered portion 181A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 181B extends away from the first die pad 10A in the second direction y. The surface of the exposed portion 181B is, for example, tin-plated.

[0039] As shown in Figure 3, the second detection terminal 182 has a covered portion 182A and an exposed portion 182B. The covered portion 182A is covered with a sealing resin 50. As shown in Figures 2 to 5, the exposed portion 182B is connected to the covered portion 182A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 182B extends away from the second die pad 10B in the second direction y. The surface of the exposed portion 182B is, for example, tin-plated.

[0040] As shown in Figure 5, in semiconductor device A10, the height H of the exposed portion 14B of the first input terminal 14, the exposed portion 15B of the output terminal 15, and the exposed portion 16B of the second input terminal 16 are all the same. Furthermore, the thickness of each of these is also the same. Therefore, when viewed in the first direction x, at least a portion of the second input terminal 16 (exposed portion 16B) overlaps with the first input terminal 14 and the output terminal 15, respectively (see Figure 6).

[0041] The conductive member 30, together with the support member 10 and the multiple terminal leads 13, forms a conductive path in the semiconductor device A10. The conductive member 30 is composed of copper. The conductive member 30 is a metal clip. In the semiconductor device A10, the conductive member 30 includes a first conductive member 31 and a second conductive member 32, as shown in Figures 3 and 7.

[0042] As shown in Figure 3, the first conductive member 31 is joined to the first electrode 211 of the first element 21A and to the second die pad 10B. As a result, the first electrode 211 of the first element 21A is electrically connected to the second die pad 10B and the second electrode 212 of the second element 21B. The first conductive member 31 has a main body portion 311, a first joining portion 312, and a second joining portion 313. As shown in Figure 7, the first die pad 10A is located on the opposite side of the first joining portion 312 from the first element 21A in the thickness direction z.

[0043] The main body portion 311 constitutes the main part of the first conductive member 31. As shown in Figure 3, the main body portion 311 extends in the first direction x. As shown in Figure 7, the main body portion 311 straddles the space between the first die pad 10A and the second die pad 10B.

[0044] As shown in Figures 12 and 13, the first junction 312 faces the first electrode 211 of the first element 21A. The first junction 312 is connected to the main body 311. The first junction 312 has a junction surface 312A and an end surface 312B. The junction surface 312A faces the first electrode 211 of the first element 21A. The end surface 312B faces the first direction x. In the first direction x, the end surface 312B is located between the junction surface 312A and the gate electrode 213 of the first element 21A. As shown in Figure 12, when viewed in the thickness direction z, a portion of the first electrode 211 of the first element 21A is located between the gate electrode 213 of the first element 21A and the first junction 312.

[0045] As shown in Figure 10, the second joint 313 is joined to the first seating surface 103 of the second die pad 10B. The second joint 313 extends in the second direction y. At least a portion of the second joint 313 is housed in the area defined by the first seating surface 103 and the first upright surface 104 of the second die pad 10B. The second joint 313 is connected to the main body 311. The second joint 313 is located on the opposite side of the main body 311 from the first joint 312.

[0046] As shown in Figures 12 and 13, the semiconductor device A10 further comprises a first bonding layer 33. In Figure 12, the first bonding layer 33 is shown as a region of multiple points. The first bonding layer 33 is interposed between the first electrode 211 of the first element 21A and the first bonding portion 312. The first bonding layer 33 bonds the first electrode 211 of the first element 21A and the first bonding portion 312. The first bonding layer 33 is conductive. The first bonding layer 33 is solder.

[0047] The thickness t of the first joint 312 is 0.1 mm or more, and the maximum thickness T of the first joint layer 33 is also 0.1 mm or more. max It is less than twice that. Maximum thickness T of the first bonding layer 33 max This is greater than the thickness of the first element 21A.

[0048] As shown in Figures 7 and 10, the semiconductor device A10 further comprises a second bonding layer 34. The second bonding layer 34 is interposed between the first seating surface 103 of the second die pad 10B and the second bonding portion 313. The second bonding layer 34 bonds the second die pad 10B and the second bonding portion 313. The second bonding layer 34 is conductive. The second bonding layer 34 is solder.

[0049] As shown in Figure 3, the second conductive member 32 is joined to the first electrode 211 of the second element 21B and to the covering portion 16A of the second input terminal 16. As a result, the first electrode 211 of the second element 21B is electrically connected to the second input terminal 16. The second conductive member 32 has a main body portion 321, a third joint portion 322, and a fourth joint portion 323. As shown in Figure 7, the second die pad 10B is located on the opposite side of the second element 21B from the third joint portion 322 in the thickness direction z.

[0050] The main body portion 321 constitutes the main part of the second conductive member 32. As shown in Figure 3, the main body portion 311 is bent in a hook shape when viewed in the thickness direction z. When viewed in the thickness direction z, the main body portion 311 overlaps the main surface 101 of the second die pad 10B.

[0051] As shown in Figures 14 and 15, the third junction 322 faces the first electrode 211 of the second element 21B. The third junction 322 is connected to the main body 321. The third junction 322 has a junction surface 322A and an end surface 322B. The junction surface 322A faces the first electrode 211 of the second element 21B. The end surface 322B faces the first direction x. In the first direction x, the end surface 322B is located between the junction surface 322A and the gate electrode 213 of the second element 21B. As shown in Figure 14, when viewed in the thickness direction z, a portion of the first electrode 211 of the second element 21B is located between the gate electrode 213 of the second element 21B and the third junction 322.

[0052] As shown in Figure 11, the fourth joint 323 is joined to the second seating surface 16C of the second input terminal 16. The fourth joint 323 extends in the first direction x. At least a portion of the fourth joint 323 is housed in the area defined by the second seating surface 16C and the second upright surface 16D of the second input terminal 16. The fourth joint 323 is connected to the main body 321. The fourth joint 323 is located on the opposite side of the main body 321 from the third joint 322.

[0053] As shown in Figures 14 and 15, the semiconductor device A10 further comprises a third junction layer 35. In Figure 14, the third junction layer 35 is shown as a region of multiple points. The third junction layer 35 is interposed between the first electrode 211 of the second element 21B and the third junction 322. The third junction layer 35 joins the first electrode 211 of the second element 21B and the third junction 322. The third junction layer 35 is conductive. The third junction layer 35 is solder.

[0054] The thickness t of the third joint 322 is 0.1 mm or more, and the maximum thickness T of the third joint layer 35 is also 0.1 mm or more. max It is less than twice that. Maximum thickness T of the third bonding layer 35 max This is greater than the thickness of the second element 21B.

[0055] As shown in Figures 7 and 11, the semiconductor device A10 further comprises a fourth bonding layer 36. The fourth bonding layer 36 is interposed between the second seating surface 16C of the second input terminal 16 and the fourth bonding portion 323. The fourth bonding layer 36 bonds the covering portion 16A of the second input terminal 16 to the fourth bonding portion 323. The fourth bonding layer 36 is conductive. The fourth bonding layer 36 is solder.

[0056] As shown in Figures 12 to 15, the semiconductor device A10 further comprises a restrictor 37. The restrictor 37 contains a metallic element, which is aluminum (Al). In the semiconductor device A10, the restrictor 37 is formed by bonding a metal block to the first electrode 211 of the semiconductor element 21 during its manufacture. The metal block is formed by a wire bonding method. The restrictor 37 extends in a second direction y. In the semiconductor device A10, the restrictor 37 includes a first restrictor 37A bonded to the first electrode 211 of the first element 21A, and a second restrictor 37B bonded to the first electrode 211 of the second element 21B.

[0057] As shown in Figure 13, the first restrictor 37A faces the first bonding layer 33 in a first direction x. The first restrictor 37A is in contact with the first bonding layer 33 and the end face 312B of the first joint portion 312 of the first conductive member 31. As shown in Figure 12, the first restrictor 37A includes a first portion 371 and a second portion 372 that are separated from each other in a second direction y. A portion of the first bonding layer 33 is located between the first portion 371 and the second portion 372.

[0058] As shown in Figure 15, the second restrictor 37B faces the third bonding layer 35 in the first direction x. The second restrictor 37B is in contact with the third bonding layer 35 and the end face 322B of the third joint portion 322 of the second conductive member 32. As shown in Figure 14, the second restrictor 37B includes a first portion 371 and a second portion 372 that are separated from each other in the second direction y. A portion of the third bonding layer 35 is located between the first portion 371 and the second portion 372.

[0059] As shown in Figure 3, the pair of gate wires 41 are individually connected to the gate electrodes 213 of the first element 21A and the second element 21B, to the covering portion 171A of the first gate terminal 171, and to the covering portion 172A of the second gate terminal 172. As a result, the first gate terminal 171 is electrically connected to the gate electrode 213 of the first element 21A. The second gate terminal 172 is electrically connected to the gate electrode 213 of the second element 21B. The composition of the pair of gate wires 41 includes gold. In addition, the composition of the pair of gate wires 41 may include copper or aluminum.

[0060] As shown in Figure 3, the pair of detection wires 42 are individually connected to the second electrodes 212 of the first element 21A and the second element 21B, to the covering portion 181A of the first detection terminal 181, and to the covering portion 182A of the second detection terminal 182. As a result, the first detection terminal 181 is electrically connected to the second electrode 212 of the first element 21A, and the second detection terminal 182 is electrically connected to the second electrode 212 of the second element 21B. The composition of the pair of detection wires 42 includes gold. In addition, the composition of the pair of detection wires 42 may include copper or aluminum.

[0061] Next, we will explain the effects and benefits of semiconductor device A10.

[0062] The semiconductor device A10 comprises a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first junction 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first junction 312. The semiconductor device A10 further comprises a restricting body 37 (first restricting body 37A) bonded to the first electrode 211. In a direction perpendicular to the thickness direction z, the restricting body 37 faces the first bonding layer 33. With this configuration, when the first junction 312 is bonded to the first electrode 211 via the first bonding layer 33, the relative displacement of the first junction 312 with respect to the first electrode 211 is suppressed by the first junction 312 contacting the restricting body 37. Therefore, semiconductor device A10 makes it possible to suppress misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21.

[0063] The semiconductor element 21 has a gate electrode 213 located on the same side as the first electrode 211 in the thickness direction z. Viewed in the thickness direction z, a portion of the first electrode 211 is located between the gate electrode 213 and the first junction 312 of the conductive member 30. This configuration is obtained as a result of the regulating body 37 suppressing the misalignment of the conductive member 30 relative to the first electrode 211. With this configuration, it is possible to avoid the first junction 312 covering the gate electrode 213.

[0064] The first joint portion 312 of the conductive member 30 has an end face 312B facing the first direction x. The end face 312B is in contact with the restrictor 37. This configuration is achieved when the first joint portion 312 is joined to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, and the first joint portion 312 attempts to shift toward the side of the first direction x where the gate electrode 213 of the semiconductor element 21 is located, by causing the end face 312B to come into contact with the restrictor 37. Therefore, the end face 312B serves as a means to ensure that the first joint portion 312 is in reliable contact with the restrictor 37.

[0065] Viewed in the thickness direction z, the restrictor 37 is located between the gate electrode 213 of the semiconductor element 21 and the first junction 312 of the conductive member 30. As a result, when the first junction 312 is joined to the first electrode 211 of the semiconductor element 21 via the first junction layer 33, the restrictor 37 can block any molten first junction layer 33 from flowing out toward the gate electrode 213.

[0066] The restrictor 37 includes a first part 371 and a second part 372 that are spaced apart from each other in the second direction y. This reduces the volume of the restrictor 37 while suppressing the misalignment of the conductive member 30 relative to the first electrode 211 of the semiconductor element 21. Furthermore, the restrictor 37 contains a metallic element, which is aluminum. This allows the restrictor 37 to serve as a conductive path between the first electrode 211 of the semiconductor element 21 and the first junction 312 of the conductive member 30. In addition, the liquid-repellent properties of the molten first junction layer 33 relative to the restrictor 37 are improved. Therefore, the restrictor 37 can more effectively block the molten first junction layer 33.

[0067] The sealing resin 50 has a plurality of recesses 56 that are recessed in the second direction y from the third side surface 55. This configuration ensures a longer creepage distance of the sealing resin 50 between any two of the plurality of terminal leads 13 (excluding the first gate terminal 171 and the first detection terminal 181, and the second gate terminal 172 and the second detection terminal 182). This improves the dielectric strength of the semiconductor device A10.

[0068] The sealing resin 50 has a groove 57 that is recessed from the bottom surface 52 and separates the back surface 102 of the first die pad 10A from the back surface 102 of the second die pad 10B when viewed in the thickness direction z. This configuration ensures a longer creepage distance of the sealing resin 50 between the first die pad 10A and the second die pad 10B. This makes it possible to further improve the dielectric strength of the semiconductor device A10. Furthermore, the thermal strain of the sealing resin 50 in the first direction x can be dispersed. This makes it possible to mitigate the concentration of thermal strain on the pair of first side surfaces 53 of the sealing resin 50.

[0069] One of the multiple terminal leads 13 is connected to the support member 10. This allows the support member 10 to be used as a conductive member while keeping the dimensions of the semiconductor device A10 to a minimum.

[0070] The back surface 102 of the support member 10 is exposed from the sealing resin 50. This improves the heat dissipation of the semiconductor device A10.

[0071] The conductive member 30 contains copper. This reduces the electrical resistance of the conductive member 30 compared to a wire containing aluminum. This is suitable for passing a large current through the semiconductor element 21.

[0072] A semiconductor device A20 according to a second embodiment of the present disclosure will be described based on Figures 16 to 19. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figures 16 and 18 are shown with the sealing resin 50 transparent. The position in Figure 16 is the same as the position in Figure 12 of the semiconductor device A10. The position in Figure 18 is the same as the position in Figure 14 of the semiconductor device A10.

[0073] Semiconductor device A20 has a different configuration of the restrictor 37 compared to semiconductor device A10.

[0074] As shown in Figures 16 and 17, the first restrictor 37A is bonded to the bonding surface 312A of the first joint 312 of the first conductive member 31. The first restrictor 37A is in contact with the first electrode 211 of the first element 21A. Therefore, the first restrictor 37A is interposed between the first electrode 211 of the first element 21A and the bonding surface 312A, similar to the first bonding layer 33. In the semiconductor device A20, the first restrictor 37A is formed by bonding a metal block to the bonding surface 312A using a wire bonding method.

[0075] As shown in Figures 18 and 19, the second restrictor 37B is bonded to the bonding surface 322A of the third joint 322 of the second conductive member 32. The second restrictor 37B is in contact with the first electrode 211 of the second element 21B. Therefore, the second restrictor 37B is interposed between the first electrode 211 of the second element 21B and the bonding surface 322A, similar to the third bonding layer 35. In the semiconductor device A20, the second restrictor 37B is formed by bonding a metal block to the bonding surface 322A using a wire bonding method.

[0076] Next, a modified semiconductor device A21 of semiconductor device A20 will be described based on Figures 20 and 21. Here, for ease of understanding, Figure 20 is shown as being transparent to the sealing resin 50. The position in Figure 20 is the same as the position in Figure 16. The configuration of this modified example can be applied not only to the relationship between the first electrode 211 of the first element 21A shown below and the first conductive member 31, but also to the relationship between the first electrode 211 of the second element 21B shown in Figures 18 and 19 and the second conductive member 32.

[0077] As shown in Figures 20 and 21, in the semiconductor device A21, the first conductive member 31 has a tip portion 314. The tip portion 314 is connected to the first joint portion 312. The tip portion 314 is inclined at an angle α with respect to the joint surface 312A of the first joint portion 312, in a direction that moves away from the first electrode 211 of the first element 21A in the thickness direction z, as it moves away from the first joint portion 312 in the first direction x. The angle α is between 30° and 60°.

[0078] As shown in Figures 20 and 21, the first electrode 211 of the first element 21A has an extended portion 211B. Viewed in the thickness direction z, the extended portion 211B is located on the opposite side of the first joint portion 312, with the tip portion 314 in between.

[0079] As shown in Figure 21, the first bonding layer 33 is located on both sides of the first restricting body 37A in the first direction x. The first bonding layer 33 is in contact with the extended portion 211B of the first electrode 211 of the first element 21A and the tip portion 314 of the first conductive member 31.

[0080] Next, we will explain the effects and benefits of semiconductor device A20.

[0081] The semiconductor device A20 comprises a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first junction 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first junction 312. The semiconductor device A20 further comprises a restricting body 37 (first restricting body 37A) bonded to the first junction 312. In a direction perpendicular to the thickness direction z, the restricting body 37 faces the first bonding layer 33. With this configuration, when the first junction 312 is bonded to the first electrode 211 via the first bonding layer 33, the restricting body 37 comes into contact with the molten first bonding layer 33, and the restricting body 37 receives a reaction force from the first bonding layer 33, thereby suppressing the relative displacement of the first junction 312 with respect to the first electrode 211. Therefore, the semiconductor device A20 also makes it possible to suppress the misalignment of the conductive member 30 relative to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, since the semiconductor device A20 has the same configuration as the semiconductor device A10, the semiconductor device A20 also exhibits the effects of the said configuration.

[0082] The first joint portion 312 of the conductive member 30 has a joint surface 312A facing the first electrode 211 of the semiconductor element 21. The restrictor 37 is in contact with the joint surface 312A and is joined to the first electrode 211. As a result, as shown in Figure 17, the first restrictor 37A is sandwiched between the first electrode 211 of the first element 21A and the joint surface 312A. With this configuration, the maximum thickness T of the first bonding layer 33 max The thickness of the first regulating body 37A can be made equal to (or approximately equal to) the thickness of the first regulating body 37A. Therefore, the maximum thickness T of the first bonding layer 33 can be made equal to (or approximately equal to) the thickness of the first regulating body 37A. max This makes management easier. Furthermore, as shown in Figure 19, the second restrictor 37B is also sandwiched between the first electrode 211 of the second element 21B and the bonding surface 322A of the third joint 322 of the second conductive member 32. With this configuration, the maximum thickness T of the third bonding layer 35 maxThe thickness of the third bonding layer 35 can be made equal to (or approximately equal to) the thickness of the second restricting body 37B. Therefore, the maximum thickness T of the third bonding layer 35 can be made equal to (or approximately equal to) the thickness of the second restricting body 37B. max This also makes management easier.

[0083] The conductive member 30 of the semiconductor device A21 has a tip portion 314 connected to the first joint portion 312. The tip portion 314 is inclined with respect to the bonding surface 312A of the first joint portion 312 in a direction perpendicular to the thickness direction z, so that as it moves away from the first joint portion 312 in the direction perpendicular to the thickness direction z, it moves away from the first electrode 211 of the semiconductor element 21 in the thickness direction z. Furthermore, in the thickness direction z, the first electrode 211 has an extended portion 211B located on the opposite side of the first joint portion 312 with the tip portion 314 in between. With this configuration, as shown in Figure 21, the first bonding layer 33 is in contact with the extended portion 211B, and the first bonding layer 33 creeps up along the tip portion 314. As a result, a relatively large fillet is formed in the first bonding layer 33. Therefore, the bonding strength of the conductive member 30 to the first electrode 211 is improved, and it becomes possible to pass a larger current through the conductive member 30. The inclination angle α of the tip portion 314 with respect to the joint surface 312A is preferably 30° or more and 60° or less. When the inclination angle α is set within this range, the formation of fillets in the first joint layer 33 is promoted, while the concentration of thermal stress at the interface between the expanded portion 211B and the first joint layer 33 is reduced.

[0084] The restrictor 37 contains a metallic element, which is aluminum. As a result, the restrictor 37 becomes a conductive path between the first electrode 211 of the semiconductor element 21 and the first joint 312 of the conductive member 30. Furthermore, the liquid-repellent properties of the molten first joint layer 33 with respect to the restrictor 37 are improved. As a result, when the restrictor 37 comes into contact with the molten first joint layer 33, the reaction force that the restrictor 37 receives from the first joint layer 33 becomes larger. Therefore, the effect of the restrictor 37 in suppressing displacement of the conductive member 30 is improved.

[0085] As shown in Figures 22 and 23, a semiconductor device A30 according to a third embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figures 22 and 23 are shown with the sealing resin 50 transparent. The position in Figure 22 is the same as the position in Figure 12 of the semiconductor device A10. The position in Figure 23 is the same as the position in Figure 14 of the semiconductor device A10.

[0086] Semiconductor device A30 differs from semiconductor device A10 in that it does not have a restricting body 37 and in the configuration of the conductive member 30.

[0087] As shown in Figure 22, the first joint 312 of the first conductive member 31 has a second recess 312C. The second recess 312C is recessed in the first direction x. Viewed in the thickness direction z, the second recess 312C overlaps with the first recess 211A of the first electrode 211 of the first element 21A. The second recess 312C is larger than the first recess 211A of the first electrode 211 of the first element 21A. Furthermore, viewed in the thickness direction z, the gate electrode 213 of the first element 21A overlaps with both the first recess 211A of the first electrode 211 of the first element 21A and the second recess 312C.

[0088] As shown in Figure 23, the third joint 322 of the second conductive member 32 has a second recess 322C. The second recess 322C is recessed in the first direction x. Viewed in the thickness direction z, the second recess 322C overlaps with the first recess 211A of the first electrode 211 of the second element 21B. The second recess 322C is larger than the first recess 211A of the first electrode 211 of the second element 21B. Furthermore, viewed in the thickness direction z, the gate electrode 213 of the second element 21B overlaps with both the first recess 211A of the first electrode 211 of the second element 21B and the second recess 322C.

[0089] Next, we will explain the effects and benefits of semiconductor device A30.

[0090] The semiconductor device A30 comprises a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first junction 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first junction 312. The first electrode 211 has a first recess 211A that is recessed in a direction perpendicular to the thickness direction z. The first junction 312 has a second recess 312C that is recessed in a direction perpendicular to the thickness direction z. Viewed in the thickness direction z, the second recess 312C overlaps the first recess 211A. By adopting this configuration, when bonding the first junction 312 to the first electrode 211 via the first bonding layer 33, even if the position of the first junction 312 is misaligned with respect to the first electrode 211, it is possible to avoid the first junction 312 covering the first recess 211A. Therefore, semiconductor device A30 allows for misalignment of the conductive member 30 relative to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, by having the same configuration as semiconductor device A10, semiconductor device A30 also achieves the effects of the said configuration.

[0091] The semiconductor element 21 has a gate electrode 213 located on the same side as the first electrode 211 in the thickness direction z. In the thickness direction z, the gate electrode 213 overlaps the first recess 211A of the first electrode 211 of the semiconductor element 21 and the second recess 312C of the first junction 312 of the conductive member 30. This prevents the first junction 312 from covering the gate electrode 213 even if a misalignment of the conductive member 30 relative to the first electrode 211 is permitted.

[0092] A semiconductor device A40 according to the fourth embodiment of this disclosure will be described based on Figures 24 to 26. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 24 shows the sealing resin 50 being permeable. In Figure 24, the permeable sealing resin 50 is shown by dashed lines.

[0093] The semiconductor device A40 differs from the semiconductor device A10 in that it further includes a protective element 22 and has a different configuration of the conductive member 30 and the restricting body 37.

[0094] The protection element 22 includes a first diode 22A and a second diode 22B, as shown in Figure 24. The first diode 22A is mounted on the main surface 101 of the first die pad 10A. The second diode 22B is mounted on the main surface 101 of the second die pad 10B. The protection element 22 is, for example, a Schottky barrier diode. The first diode 22A is connected in parallel with the first element 21A. The second diode 22B is connected in parallel with the second element 21B. The protection element 22 is a so-called freewheeling diode that, when a reverse bias is applied to the semiconductor element 21, allows current to flow to the protection element 22 instead of the semiconductor element 21. As shown in Figures 21 and 22, the protection element 22 has an upper electrode 221 and a lower electrode 222.

[0095] As shown in Figures 25 and 26, the upper electrode 221 is provided on the side facing the main surface 101 of the support member 10 in the thickness direction z. The upper electrode 221 corresponds to the anode electrode.

[0096] As shown in Figures 25 and 26, the lower electrode 222 is located on the opposite side of the upper electrode 221 in the thickness direction z. The lower electrode 222 corresponds to the cathode electrode. As shown in Figure 25, the lower electrode 222 of the first diode 22A is bonded to the main surface 101 of the first die pad 10A via the die bonding layer 23. As a result, the lower electrode 222 of the first diode 22A is conductive to the second electrode 212 of the first element 21A via the first die pad 10A. As shown in Figure 26, the lower electrode 222 of the second diode 22B is bonded to the main surface 101 of the second die pad 10B via the die bonding layer 23. As a result, the lower electrode 222 of the second diode 22B is conductive to the second electrode 212 of the second element 21B via the second die pad 10B.

[0097] As shown in Figure 24, the first junction 312 of the first conductive member 31 includes two regions that are spaced apart from each other in the second direction y. As shown in Figure 25, one of these two regions is joined to the upper electrode 221 of the first diode 22A via the first junction layer 33. As a result, the upper electrode 221 of the first diode 22A is electrically connected to the first electrode 211 of the first element 21A via the first conductive member 31.

[0098] As shown in Figure 24, the third junction 322 of the second conductive member 32 includes two regions that are spaced apart from each other in the second direction y. As shown in Figure 26, one of these two regions is joined to the upper electrode 221 of the second diode 22B via the third junction layer 35. As a result, the upper electrode 221 of the first diode 22A is electrically connected to the first electrode 211 of the second element 21B via the second conductive member 32.

[0099] As shown in Figure 25, in semiconductor device A40, the restrictor 37 further includes a third restrictor 37C bonded to the upper electrode 221 of the first diode 22A. The third restrictor 37C faces the first bonding layer 33 in the first direction x. The third restrictor 37C is in contact with the first bonding layer 33 and the end face 312B of the first bonding portion 312 of the first conductive member 31.

[0100] As shown in Figure 26, in semiconductor device A40, the restrictor 37 further includes a fourth restrictor 37D bonded to the upper electrode 221 of the second diode 22B. The fourth restrictor 37D faces the third bonding layer 35 in the first direction x. The fourth restrictor 37D is in contact with the third bonding layer 35 and the end face 322B of the third bonding portion 322 of the second conductive member 32.

[0101] Next, we will explain the effects and benefits of semiconductor device A40.

[0102] The semiconductor device A40 comprises a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first junction 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first junction 312. The semiconductor device A40 further comprises a restrictor 37 (first restrictor 37A) bonded to the first electrode 211. In a direction perpendicular to the thickness direction z, the restrictor 37 faces the first bonding layer 33. By adopting this configuration, the same effects as those of the semiconductor device A10 are achieved. Therefore, the semiconductor device A40 also makes it possible to suppress the misalignment of the conductive member 30 relative to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, by having the same configuration as the semiconductor device A10, the semiconductor device A40 also achieves the effects of the said configuration.

[0103] The semiconductor device A40 further includes a protection element 22. This allows the semiconductor element 21 to be properly protected from reverse bias even when a large current is passed through the semiconductor device A40.

[0104] The restrictor 37 of the semiconductor device A40 includes a third restrictor 37C bonded to the upper electrode 221 of the first diode 22A and a fourth restrictor 37D bonded to the upper electrode 221 of the second diode 22B. As a result, when the first joint 312 of the first conductive member 31 is joined to the first electrode 211 of the first element 21A and the upper electrode 221 of the first diode 22A via the first bonding layer 33, the first joint 312 may come into contact with at least one of the first restrictor 37A and the third restrictor 37C of the restrictor 37. Therefore, rotational displacement of the first conductive member 31 around the thickness direction z can be effectively suppressed. Similarly, when the third joint portion 322 of the second conductive member 32 is joined to the first electrode 211 of the second element 21B and the upper electrode 221 of the second diode 22B via the third bonding layer 35, the third joint portion 322 may come into contact with at least one of the second restrictor 37B and the fourth restrictor 37D of the restrictor 37. Therefore, rotational displacement of the second conductive member 32 around the thickness direction z can be effectively suppressed.

[0105] As shown in Figures 27 to 29, a semiconductor device A50 according to the fifth embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figures 27 and 29 are shown with the sealing resin 50 transparent. The position in Figure 27 is the same as the position in Figure 12 of the semiconductor device A10. The position in Figure 29 is the same as the position in Figure 14 of the semiconductor device A10.

[0106] The semiconductor device A50 has a different configuration of the conductive member 30 compared to the semiconductor device A10.

[0107] As shown in Figures 27 and 28, the first conductive member 31 has a protrusion 38 and a recessed portion 39. The protrusion 38 and recessed portion 39 are provided on the first joint 312 of the first conductive member 31. The protrusion 38 and recessed portion 39 can be formed by press working on the first joint 312.

[0108] As shown in Figure 28, the protrusion 38 projects in the thickness direction z from the bonding surface 312A of the first bonding portion 312 toward the first electrode 211 of the first element 21A. The protrusion 38 is in contact with the first electrode 211 of the first element 21A and the first bonding layer 33. The dimension d of the protrusion 38 in the thickness direction z is smaller than the dimension h of the first restricting body 37A in the thickness direction z. As shown in Figure 27, the protrusion 38 is circular in shape when viewed in the thickness direction z. Alternatively, the protrusion 38 may be polygonal, such as a quadrilateral, when viewed in the thickness direction z.

[0109] As shown in Figure 28, the recessed portion 39 is recessed in the thickness direction z from the upper surface 312D of the first joint portion 312 toward the first electrode 211 of the first element 21A. The upper surface 312D faces away from the joint surface 312A of the first joint portion 312 in the thickness direction z and is connected to the end surface 312B of the first joint portion 312. As shown in Figure 27, the shape of the recessed portion 39 approximates the shape of the convex portion 38 when viewed in the thickness direction z. The recessed portion 39 overlaps the convex portion 38 when viewed in the thickness direction z. In this case, the dimension d of the convex portion 38 in the thickness direction z is less than or equal to the thickness t of the first joint portion 312.

[0110] As shown in Figures 29 and 30, the second conductive member 32 has a protrusion 38 and a recessed portion 39. The protrusion 38 and recessed portion 39 are provided on the third joint 322 of the second conductive member 32. The protrusion 38 and recessed portion 39 can be formed by press working on the third joint 322.

[0111] As shown in Figure 30, the protrusion 38 projects in the thickness direction z from the bonding surface 312A of the third bonding portion 322 toward the first electrode 211 of the second element 21B. The protrusion 38 is in contact with the first electrode 211 of the second element 21B and the third bonding layer 35. The dimension d of the protrusion 38 in the thickness direction z is smaller than the dimension h of the second restricting body 37B in the thickness direction z. As shown in Figure 29, the protrusion 38 is circular in shape when viewed in the thickness direction z. Alternatively, the protrusion 38 may be polygonal, such as a quadrilateral, when viewed in the thickness direction z.

[0112] As shown in Figure 30, the recessed portion 39 is recessed in the thickness direction z from the upper surface 322D of the third joint portion 322 toward the first electrode 211 of the second element 21B. The upper surface 322D faces away from the joint surface 322A of the third joint portion 322 in the thickness direction z and is connected to the end surface 322B of the third joint portion 322. As shown in Figure 29, the shape of the recessed portion 39 approximates the shape of the convex portion 38 when viewed in the thickness direction z. The recessed portion 39 overlaps the convex portion 38 when viewed in the thickness direction z. In this case, the dimension d of the convex portion 38 in the thickness direction z is less than or equal to the thickness t of the third joint portion 322.

[0113] Next, a first modified example of semiconductor device A50, semiconductor device A51, will be described based on Figure 31. Here, for ease of understanding, Figure 31 is shown with the sealing resin 50 transparent. The position in Figure 31 is the same as the position in Figure 27. The configuration of this modified example can be applied not only to the first conductive member 31 shown below, but also to the second conductive member 32 shown in Figures 29 and 30.

[0114] As shown in Figure 31, in semiconductor device A51, the protrusion 38 of the first conductive member 31 includes a first protrusion 381 and a second protrusion 382 that are spaced apart from each other in the first direction x. Viewed in the thickness direction z, the shape and size of the first protrusion 381 and the second protrusion 382 are equal to each other.

[0115] Next, a second modified example of semiconductor device A50, semiconductor device A52, will be described based on Figure 32. Here, for ease of understanding, Figure 32 is shown with the sealing resin 50 transparent. The position in Figure 32 is the same as the position in Figure 27. The configuration of this modified example can be applied not only to the first conductive member 31 shown below, but also to the second conductive member 32 shown in Figures 29 and 30.

[0116] As shown in Figure 32, in semiconductor device A52, the protrusion 38 of the first conductive member 31 includes a first protrusion 381 and a second protrusion 382 that are located apart from each other in the second direction y. The first protrusion 381 and the second protrusion 382 extend in the first direction x. That is, the first protrusion 381 and the second protrusion 382 extend in a direction perpendicular to the thickness direction z and the direction in which the first protrusion 381 and the second protrusion 382 are separated from each other. In each of the first protrusion 381 and the second protrusion 382, ​​the dimension a in the first direction x is greater than the dimension b in the second direction y. With respect to the thickness direction z, the shape and size of the first protrusion 381 and the second protrusion 382 are equal to each other.

[0117] Next, we will explain the effects and benefits of semiconductor device A50.

[0118] The semiconductor device A50 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conduction member 30 (first conduction member 31) having a first joint portion 312 facing the semiconductor element 21, and a joint layer (first joint layer 33) interposed between the first electrode 211 and the first joint portion 312. The semiconductor device A50 further includes a regulating body 37 (first regulating body 37A) joined to the first electrode 211. In a direction orthogonal to the thickness direction z, the regulating body 37 faces the first joint layer 33. By adopting this configuration, the same operational effects as those of the semiconductor device A10 are achieved. Therefore, also in the semiconductor device A50, it is possible to suppress the displacement of the conduction member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, since the semiconductor device A50 has the same configuration as the semiconductor device A10, the semiconductor device A50 also exhibits the operational effects related to this configuration.

[0119] The conduction member 30 of the semiconductor device A50 has a convex portion 38 provided at the first joint portion 312. The convex portion 38 protrudes in the thickness direction z toward the first electrode 211 of the semiconductor element 21. The convex portion 38 is in contact with the first electrode 211. By adopting this configuration, when joining the first joint portion 312 to the first electrode 211 via the first joint layer 33, the convex portion 38 functions as a spacer. As a result, max the maximum thickness T of the first joint layer 33 shown in FIG. 28 becomes equal to (or approximately equal to) the dimension d in the thickness direction z of the convex portion 38, so that the maximum thickness T max can be controlled. By controlling the maximum thickness T max it is possible to improve the durability of the semiconductor device A50 against temperature cycles and power cycles. Furthermore, the generation of voids in the first joint layer 33 can be suppressed.

[0120] Furthermore, the dimension d in the thickness direction z of the protrusion 38 shown in Figure 28 is smaller than the dimension h in the thickness direction z of the regulating body 37. With this configuration, when the first junction 312 is joined to the first electrode 211 via the first bonding layer 33, if the first junction 312 tries to shift in the first direction x toward the gate electrode 213 of the semiconductor element 21, the end face 312B of the first junction 312 can reliably contact the regulating body 37. The range of the dimension d in the thickness direction z of the protrusion 38 that can exert this effect is preferably 75 μm or more and 175 μm or less. A more preferable range for dimension d is 100 μm or more and 150 μm.

[0121] In semiconductor device A51, the protrusion 38 includes a first protrusion 381 and a second protrusion 382 that are spaced apart from each other in the first direction x. By adopting this configuration, when the first joint 312 of the conductive member 30 is joined to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, rotational displacement of the first joint 312 around the second direction y can be suppressed.

[0122] In semiconductor device A52, the first protrusion 381 and the second protrusion 382 of the protrusion 38 extend in directions perpendicular to the thickness direction z and the direction in which the first protrusion 381 and the second protrusion 382 move away from each other. By adopting this configuration, when joining the first joint portion 312 of the conductive member 30 to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, rotational displacement of the first joint portion 312 around the first direction x and the second direction y can be suppressed.

[0123] As shown in Figures 33 to 35, a semiconductor device A60 according to the sixth embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 33 shows the sealing resin 50 being transparent. The position in Figure 33 is the same as the position in Figure 27 of the semiconductor device A50. The configuration of this embodiment can be applied not only to the relationship between the first electrode 211 of the first element 21A and the first conductive member 31 shown below, but also to the relationship between the first electrode 211 of the second element 21B and the second conductive member 32 shown in Figures 29 and 30.

[0124] Semiconductor device A60 differs from semiconductor device A50 in the configuration of the semiconductor element 21 and the conductive member 30.

[0125] As shown in Figures 33 and 35, the first electrode 211 of the first element 21A includes two regions that are spaced apart from each other in a first direction x. Accordingly, the first conductive member 31 has two first joints 312 that are spaced apart from each other in a first direction x. One side of the two first joints 312 in a second direction y is connected to the main body 311 of the first conductive member 31.

[0126] As shown in Figures 33 to 35, the first conductive member 31 has a protrusion 38 and a recessed portion 39. The protrusion 38 and the recessed portion 39 are provided on the two first joint portions 312 of the first conductive member 31.

[0127] As shown in Figures 34 and 35, the protrusion 38 projects in the thickness direction z from the bonding surface 312A of the two first bonding portions 312 toward the first electrode 211 of the first element 21A. The protrusion 38 is in contact with the first electrode 211 of the first element 21A and the first bonding layer 33. The protrusion 38 includes a first protrusion 381 and a second protrusion 382 that are spaced apart from each other in a first direction x. The first protrusion 381 is provided on one of the two first bonding portions 312. The second protrusion 382 is provided on the other of the two first bonding portions 312. As shown in Figure 33, the shape and size of the first protrusion 381 and the second protrusion 382 are equal to each other when viewed in the thickness direction z. The dimension d in the thickness direction z of the first protrusion 381 and the second protrusion 382 is smaller than the dimension h in the thickness direction z of the first restricting body 37A. Preferably, the range of the dimension d in the thickness direction z of the first protrusion 381 and the second protrusion 382 is 75 μm or more and 175 μm or less. A more preferable range for dimension d is 100 μm or more and 150 μm. The other configuration of the protrusion 38 is the same as the configuration of the protrusion 38 of the first conductive member 31 of the semiconductor device A50.

[0128] The recessed portion 39 is recessed in the thickness direction z from the upper surface 312D of the two first joint portions 312 toward the first electrode 211 of the first element 21A. The upper surface 312D faces away from the joint surface 312A of the two first joint portions 312 in the thickness direction z and is connected to either end face 312B of the two first joint portions 312. The other configuration of the recessed portion 39 is the same as the configuration of the recessed portion 39 of the first conductive member 31 of the semiconductor device A50.

[0129] Next, a modified semiconductor device A61, which is a modified version of semiconductor device A60, will be described based on Figure 36. Here, for ease of understanding, Figure 36 is shown with the sealing resin 50 transparent. The position in Figure 36 is the same as the position in Figure 33. The configuration of this modified version can be applied not only to the first conductive member 31 shown below, but also to the second conductive member 32 shown in Figures 29 and 30.

[0130] As shown in Figure 36, in semiconductor device A61, the first protrusion 381 and the second protrusion 382 included in the protrusion 38 of the first conductive member 31 extend in the first direction x. That is, the first protrusion 381 and the second protrusion 382 extend in a direction perpendicular to the thickness direction z and the direction in which the first protrusion 381 and the second protrusion 382 move away from each other. In each of the first protrusion 381 and the second protrusion 382, ​​the dimension a in the first direction x is smaller than the dimension b in the second direction y.

[0131] Next, we will explain the effects and benefits of semiconductor device A60.

[0132] Semiconductor device A60 comprises a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first junction 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first junction 312. Semiconductor device A50 further comprises a restrictor 37 (first restrictor 37A) bonded to the first electrode 211. In a direction perpendicular to the thickness direction z, the restrictor 37 faces the first bonding layer 33. By adopting this configuration, the same effects as semiconductor device A10 are achieved. Therefore, with semiconductor device A60, it is also possible to suppress the misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, by having the same configuration as semiconductor device A10, semiconductor device A60 also achieves the effects of the said configuration.

[0133] The conductive member 30 of the semiconductor device A60 has protrusions 38 provided on two first junctions 312. The protrusions 38 project in the thickness direction z toward the first electrode 211 of the semiconductor element 21. The protrusions 38 are in contact with the first electrode 211. Therefore, the semiconductor device A60 also provides the maximum thickness T of the first junction layer 33 shown in Figure 34. max Because this can be controlled, it is possible to improve the durability of the semiconductor device A60 against temperature cycles and power cycles. Furthermore, it is possible to suppress the generation of voids in the first bonding layer 33.

[0134] The protrusion 38 includes a first protrusion 381 and a second protrusion 382 that are spaced apart from each other in the first direction x. By adopting this configuration, when joining the two first joint portions 312 of the conductive member 30 to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, rotational displacement of the two first joint portions 312 around the second direction y can be suppressed.

[0135] In semiconductor device A61, the first protrusion 381 and the second protrusion 382 of the protrusion 38 extend in directions perpendicular to the thickness direction z and the direction in which the first protrusion 381 and the second protrusion 382 move away from each other. By adopting this configuration, when joining the two first joint portions 312 of the conductive member 30 to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, rotational displacement of the two first joint portions 312 around the first direction x and the second direction y can be suppressed.

[0136] As shown in Figures 37 and 38, a semiconductor device A70 according to the seventh embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 37 shows the sealing resin 50 being transparent. The position in Figure 37 is the same as the position in Figure 16 of the semiconductor device A20. The configuration of this embodiment can be applied not only to the relationship between the first conductive member 31 and the first restrictor 37A shown below, but also to the relationship between the second conductive member 32 and the second restrictor 37B shown in Figures 18 and 19.

[0137] Semiconductor device A70 differs from semiconductor device A20 in the configuration of the conductive member 30 and the restricting body 37.

[0138] As shown in Figures 37 and 38, the first conductive member 31 has a protrusion 38 and a recessed portion 39. The protrusion 38 and recessed portion 39 are provided on the first joint 312 of the first conductive member 31. The protrusion 38 and recessed portion 39 can be formed by press working on the first joint 312.

[0139] As shown in Figure 38, the protrusion 38 projects in the thickness direction z from the bonding surface 312A of the first bonding portion 312 toward the first electrode 211 of the first element 21A. The protrusion 38 is in contact with the first electrode 211 of the first element 21A and the first bonding layer 33. The dimension d of the protrusion 38 in the thickness direction z is greater than the dimension h of the first restricting body 37A in the thickness direction z. As shown in Figure 37, the protrusion 38 is circular in shape when viewed in the thickness direction z. Alternatively, the protrusion 38 may be polygonal, such as a quadrilateral, when viewed in the thickness direction z.

[0140] As shown in Figure 38, the recessed portion 39 is recessed in the thickness direction z from the upper surface 312D of the first joint portion 312 toward the first electrode 211 of the first element 21A. The upper surface 312D faces away from the joint surface 312A of the first joint portion 312 in the thickness direction z and is connected to the end surface 312B of the first joint portion 312. As shown in Figure 37, the shape of the recessed portion 39 approximates the shape of the convex portion 38 when viewed in the thickness direction z. The recessed portion 39 overlaps the convex portion 38 when viewed in the thickness direction z. In this case, the dimension d of the convex portion 38 in the thickness direction z is less than or equal to the thickness t of the first joint portion 312.

[0141] In semiconductor device A70, during the manufacturing of the semiconductor element 21, a regulating body 37 is formed by bonding a metal block to the first electrode 211 of the semiconductor element 21. The metal block is formed by a wire bonding method.

[0142] Next, we will explain the effects and benefits of semiconductor device A70.

[0143] The semiconductor device A70 comprises a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first junction 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first junction 312. The semiconductor device A70 further comprises a restrictor 37 (first restrictor 37A) bonded to the first junction 312. In a direction perpendicular to the thickness direction z, the restrictor 37 faces the first bonding layer 33. With this configuration, when the first junction 312 is bonded to the first electrode 211 via the first bonding layer 33, the molten first bonding layer 33 comes into contact with the restrictor 37. As a result, the wetting spread of the first bonding layer 33 is suppressed, and a reaction force acting on the first bonding portion 312 in the opposite direction to the direction in which the wetting spread of the first bonding layer 33 is suppressed, thereby suppressing the relative displacement of the first bonding portion 312 with respect to the first electrode 211. Therefore, semiconductor device A70 makes it possible to suppress the misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, since semiconductor device A70 has the same configuration as semiconductor device A10, the semiconductor device A70 also exhibits the effects of the said configuration.

[0144] The conductive member 30 of the semiconductor device A70 has a protrusion 38 provided on the first junction 312. The protrusion 38 projects in the thickness direction z toward the first electrode 211 of the semiconductor element 21. The protrusion 38 is in contact with the first electrode 211. Therefore, the semiconductor device A70 also provides the first junction layer 33 with a maximum thickness T as shown in Figure 38. max Because this can be controlled, it is possible to improve the durability of the semiconductor device A70 against temperature cycles and power cycles. Furthermore, it is possible to suppress the generation of voids in the first bonding layer 33.

[0145] Furthermore, the dimension d in the thickness direction z of the protrusion 38 shown in Figure 38 is larger than the dimension h in the thickness direction z of the restrictor 37. By adopting this configuration, when the first joint 312 is joined to the first electrode 211 via the first bonding layer 33, the protrusion 38 can reliably contact the first electrode 211 without interfering with the restrictor 37. At the same time, when the molten first bonding layer 33 comes into contact with the restrictor 37, the first bonding layer 33 receives a reaction force from the restrictor 37. This reaction force acts on the protrusion 38. As a result, the relative displacement of the first joint 312 with respect to the first electrode 211 can be suppressed more effectively.

[0146] As shown in Figures 39 and 40, a semiconductor device A80 according to the eighth embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 39 shows the sealing resin 50 being transparent. The position in Figure 39 is the same as the position in Figure 22 of the semiconductor device A30. The configuration of this embodiment can be applied not only to the first conductive member 31 shown below, but also to the second conductive member 32 shown in Figure 23.

[0147] The semiconductor device A80 differs from the semiconductor device A30 in the configuration of the conductive member 30.

[0148] As shown in Figures 39 and 40, the first conductive member 31 has a protrusion 38 and a recessed portion 39. The protrusion 38 and recessed portion 39 are provided on the first joint 312 of the first conductive member 31. The protrusion 38 and recessed portion 39 can be formed by press working on the first joint 312.

[0149] As shown in Figure 40, the protrusion 38 projects in the thickness direction z from the bonding surface 312A of the first bonding portion 312 toward the first electrode 211 of the first element 21A. The protrusion 38 is in contact with the first electrode 211 of the first element 21A and the first bonding layer 33. As shown in Figure 39, the protrusion 38 is circular in shape when viewed in the thickness direction z. Alternatively, the protrusion 38 may be polygonal, such as a quadrilateral, when viewed in the thickness direction z.

[0150] As shown in Figure 40, the recessed portion 39 is recessed in the thickness direction z from the upper surface 312D of the first joint portion 312 toward the first electrode 211 of the first element 21A. The upper surface 312D faces away from the joint surface 312A of the first joint portion 312 in the thickness direction z and is connected to the end surface 312B of the first joint portion 312. As shown in Figure 39, the shape of the recessed portion 39 approximates the shape of the convex portion 38 when viewed in the thickness direction z. The recessed portion 39 overlaps the convex portion 38 when viewed in the thickness direction z. In this case, the dimension d of the convex portion 38 in the thickness direction z is less than or equal to the thickness t of the first joint portion 312.

[0151] Next, we will explain the effects and benefits of semiconductor device A80.

[0152] The semiconductor device A80 comprises a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first junction 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first junction 312. The first electrode 211 has a first recess 211A that is recessed in a direction perpendicular to the thickness direction z. The first junction 312 has a second recess 312C that is recessed in a direction perpendicular to the thickness direction z. Viewed in the thickness direction z, the second recess 312C overlaps with the first recess 211A. Therefore, the semiconductor device A80 also allows for misalignment of the conductive member 30 relative to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, by having the same configuration as the semiconductor device A10, the semiconductor device A80 also achieves the effects of the said configuration.

[0153] The conductive member 30 of the semiconductor device A80 has a protrusion 38 provided on the first junction 312. The protrusion 38 projects in the thickness direction z toward the first electrode 211 of the semiconductor element 21. The protrusion 38 is in contact with the first electrode 211. Therefore, even with the semiconductor device A80, the maximum thickness T of the first junction layer 33 shown in Figure 40 is also maxBecause this can be controlled, it is possible to improve the durability of the semiconductor device A80 against temperature and power cycles. Furthermore, it is possible to suppress the generation of voids in the first bonding layer 33.

[0154] This disclosure is not limited to the embodiments described above. The specific configuration of each part of this disclosure can be modified in various ways.

[0155] This disclosure includes embodiments described in the following appendix. Note 1. A semiconductor device having a first electrode, A conductive member having a first joint portion facing the first electrode, A bonding layer interposed between the first electrode and the first bonding portion, A restricting body joined to either the first electrode or the first junction, A semiconductor device in which the restrictor is facing the junction layer in a direction perpendicular to the thickness direction of the semiconductor element. Note 2. The aforementioned regulatory body is a semiconductor device as described in Appendix 1, comprising a metallic element. Note 3. The semiconductor device described in Appendix 2, wherein the aforementioned metal element is aluminum. Note 4. The restrictor is bonded to the first electrode, The first joint portion has an end face facing a first direction perpendicular to the thickness direction, The semiconductor device according to Appendix 2 or 3, wherein the end face is in contact with the restricting body. Note 5. The semiconductor device according to Appendix 4, wherein the restrictor includes a first part and a second part that are spaced apart from each other in the thickness direction and a second direction perpendicular to the first direction. Note 6. The semiconductor device according to Appendix 5, wherein a portion of the bonding layer is located between the first portion and the second portion. Note 7. The first joint portion has a bonding surface facing the first electrode, The restricting body is joined to the joining surface, The restrictor is a semiconductor device according to Appendix 2 or 3, which is in contact with the first electrode. Note 8. The conductive member has a tip portion connected to the first joint portion, The tip portion is inclined with respect to the bonding surface in a direction that moves away from the first electrode in the thickness direction as it moves away from the first bonding portion in a direction perpendicular to the thickness direction, The semiconductor device according to Appendix 7, wherein, viewed in the thickness direction, the first electrode has an extended portion located on the opposite side of the first joint portion with the tip portion in between. Note 9. The restrictor is a semiconductor device according to any one of the appendices 1 to 8, in contact with the bonding layer. Note 10. The semiconductor element has a gate electrode located on the same side as the first electrode in the thickness direction, A semiconductor device according to any one of appendices 1 to 9, wherein, when viewed in the thickness direction, a part of the first electrode is located between the gate electrode and the first junction. Note 11. A semiconductor device having a first electrode, A conductive member having a first joint portion facing the first electrode, The device comprises a bonding layer interposed between the first electrode and the first bonding portion, The first electrode has a first recess that is recessed in a direction perpendicular to the thickness direction of the semiconductor element, The first joint portion has a second recess that is recessed in a direction perpendicular to the thickness direction, A semiconductor device in which, when viewed in the thickness direction, the second recess overlaps the first recess. Note 12. The semiconductor element has a gate electrode located on the same side as the first electrode in the thickness direction, The semiconductor device according to Appendix 11, wherein, viewed in the thickness direction, the gate electrode overlaps the first recess and the second recess. Note 13. The system further comprises a support member located on the opposite side of the semiconductor element from the first junction in the thickness direction, The semiconductor element is a semiconductor device as described in any one of appendices 1 to 12, mounted on the support member. Note 14. The semiconductor device according to Appendix 13, further comprising a sealing resin covering the semiconductor element, the conductive member, and a part of the support member. Note 15. The semiconductor element further comprises a plurality of terminal leads that conduct electricity to the aforementioned semiconductor element. The semiconductor device according to Appendix 14, wherein a portion of each of the plurality of terminal leads is covered with the sealing resin. Note 16. The support member is electrically conductive, The semiconductor element has a second electrode facing the support member, The second electrode is joined to the support member, The semiconductor device according to Appendix 15, wherein one of the plurality of terminal leads is connected to the support member. Note 17. The conductive member has a main body to which the first joint is connected, and a second joint connected to the main body and located away from the first joint. The semiconductor device according to either Appendix 15 or 16, wherein the second joint is joined to one of the plurality of terminal leads. Note 18. The conductive member is provided at the first joint and has a protrusion that projects in the thickness direction toward the first electrode, The aforementioned protrusion is in contact with the first electrode, and the semiconductor device is as described in any one of the appendices 1 to 17. Note 19. The conductive member is provided at the first joint and has a recessed portion that is recessed in the thickness direction toward the first electrode, The semiconductor device described in Appendix 18, wherein, viewed in the thickness direction, the recessed portion overlaps the convex portion. Note 20. The semiconductor device according to Appendix 19, wherein the dimension of the protrusion in the thickness direction is less than or equal to the thickness of the first joint. Note 21. The aforementioned protrusions include a first protrusion and a second protrusion that are spaced apart from each other in a direction perpendicular to the thickness direction, The semiconductor device according to any one of appendices 18 to 20, wherein the first and second protrusions extend in directions perpendicular to the thickness direction and the direction in which the first and second protrusions move away from each other. [Explanation of Symbols]

[0156] A10, A20, A30, A40, A50, A60, A70, A80: Semiconductor equipment 10: Support member 10A: First die pad 10B: Second die pad 101: Main surface 102: Reverse side 103: First seat 104: First upright surface 13: Terminal lead 14: First input terminal 14A: Insulated part 14B:Exposed part 15:Output terminal 15A: Covered portion 15B: Exposed portion 16: Second input terminal 16A: Insulated part 16B: Exposed part 16C: Second seating surface 16D: Second upright surface 171: First gate terminal 171A: Covered portion 171B: Exposed portion 172: Second gate terminal 172A: Insulation 172B: Exposed area 181: First detection terminal 181A: Covered portion 181B: Exposed portion 182: Second detection terminal 182A: Covering 182B: Exposed area 21: Semiconductor element 21A: First element 21B: Second element 211: First electrode 211A: First recess 211B: Expansion section 212: Second electrode 213: Terminal electrode 22: Protection element 22A: First diode 22B: Second diode 221: Top electrode 222: Bottom electrode 23: Die bonding layer 31: First conductive member 311: Main body 312: First joint 312A: Joint surface 312B: End surface 312C: Second recess 312D: Top surface 313:Second joint part 314:Tip part 32: Second conductive member 321: Main body 322: Third joint part 322A: Joint surface 322B: End face 322C: Second recess 322D: Top surface 323: 4th joint 33: First bonding layer 34: Second bonding layer 35: Third bonding layer 36: Fourth bonding layer 37: Regulatory entity 37A: First regulated entity 37B: Second Regulatory Body 37C: Third Regulatory Body 37D: Fourth Regulatory Body 371: Part 1 372: Part 2 38: Convex part 381: First convex part 382: Second convex part 39: Indentation 41: Gate wire 42: Detection wire 50: Sealing resin 51:Top 52:Bottom 53: 1st side 54: 2nd side 55: Third side 56: Recess 57: Groove z: Thickness direction x: 1st direction y: 2nd direction

Claims

1. A semiconductor device having a first electrode, A conductive member having a first joint portion facing the first electrode, A bonding layer interposed between the first electrode and the first bonding portion, A restricting body joined to either the first electrode or the first junction, In a direction perpendicular to the thickness direction of the semiconductor element, the restrictor is facing the bonding layer, The aforementioned regulatory body contains a metal element, The first joint portion has a bonding surface facing the first electrode, The restricting body is bonded to the bonding surface and in contact with the first electrode. The conductive member has a tip portion connected to the first joint portion, The tip portion is inclined with respect to the bonding surface in a direction that moves away from the first electrode in the thickness direction as it moves away from the first bonding portion in a direction perpendicular to the thickness direction, A semiconductor device in which, viewed in the thickness direction, the first electrode has an extended portion located on the opposite side of the first joint portion with the tip portion in between.

2. The semiconductor device according to claim 1, wherein the metal element is aluminum.

3. The semiconductor device according to claim 1, wherein the restrictor is in contact with the bonding layer.

4. The semiconductor element has a gate electrode located on the same side as the first electrode in the thickness direction, The semiconductor device according to claim 1, wherein, viewed in the thickness direction, a part of the first electrode is located between the gate electrode and the first junction.

5. The support member is located in the thickness direction of the semiconductor element on the opposite side from the first joint, The semiconductor device according to claim 1, wherein the semiconductor element is mounted on the support member.

6. The semiconductor device according to claim 5, further comprising a sealing resin covering the semiconductor element, the conductive member, and a part of the support member.

7. Further comprising a plurality of terminal leads that conduct to the semiconductor element, The semiconductor device according to claim 6, wherein a portion of each of the plurality of terminal leads is covered with the sealing resin.

8. The support member is electrically conductive, The semiconductor element has a second electrode facing the support member, The second electrode is joined to the support member, The semiconductor device according to claim 7, wherein one of the plurality of terminal leads is connected to the support member.

9. The conductive member has a main body to which the first joint is connected, and a second joint connected to the main body and located away from the first joint, The semiconductor device according to claim 8, wherein the second joint is joined to one of the plurality of terminal leads.

10. A semiconductor element having a first electrode, A conductive member having a first joint portion facing the first electrode, A bonding layer interposed between the first electrode and the first bonding portion, In the thickness direction of the semiconductor element, a support member located on the opposite side of the semiconductor element from the first junction, Multiple terminal leads that conduct electricity to the aforementioned semiconductor element, A sealing resin and, The first electrode has a first recess that is recessed in a direction perpendicular to the thickness direction, The first joint portion has a second recess that is recessed in a direction perpendicular to the thickness direction, Viewed in the thickness direction, the second recess overlaps the first recess. The semiconductor element is mounted on the support member, The sealing resin covers the semiconductor element and the conductive member, and a portion of each of the support member and the plurality of terminal leads. The conductive member has a main body to which the first joint is connected, and a second joint connected to the main body and separated from the first joint. The second joint is joined to one of the plurality of terminal leads, The terminal lead to which the second joint is joined is provided with a step defined between the bottom surface facing one side in the thickness direction and the inner surface facing a direction perpendicular to the thickness direction. The second joint portion is facing the bottom surface and the inner surface, respectively, of the semiconductor device.

11. The semiconductor element has a gate electrode located on the same side as the first electrode in the thickness direction, The semiconductor device according to claim 10, wherein, viewed in the thickness direction, the gate electrode overlaps the first recess and the second recess.

12. The conductive member is provided at the first joint and has a protrusion that projects toward the first electrode in the thickness direction, The semiconductor device according to any one of claims 1 to 11, wherein the convex portion is in contact with the first electrode.

13. The conductive member is provided at the first joint and has a recessed portion that is recessed in the thickness direction toward the first electrode, The semiconductor device according to claim 12, wherein, viewed in the thickness direction, the recessed portion overlaps the convex portion.

14. The semiconductor device according to claim 13, wherein the dimension of the protrusion in the thickness direction is less than or equal to the thickness of the first joint.

15. The protrusions include a first protrusion and a second protrusion that are spaced apart from each other in a direction perpendicular to the thickness direction, The semiconductor device according to claim 12, wherein the first and second protrusions extend in directions perpendicular to the thickness direction and the direction in which the first and second protrusions move away from each other.

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