Semiconductor equipment

Abstract

This semiconductor device comprises: first and second conductive plates that are spaced apart from each other in a direction x; a third conductive plate that faces the first and second conductive plates in a direction z; a first semiconductor element that is disposed between the first conductive plate and the third conductive plate; a second semiconductor element that is disposed between the second conductive plate and the third conductive plate; a positive-electrode input terminal that is electrically connected to the first conductive plate; a negative-electrode input terminal that is electrically connected to the second conductive plate; an output terminal that is electrically connected to the third conductive plate; and an encapsulation resin that covers at least the first and second semiconductor elements.

Claims

1. A first conductive plate having a first main surface facing one side in the thickness direction and a first back surface facing the other side, A second conductive plate having a second main surface facing one side in the thickness direction and a second back surface facing the other side, and spaced apart from the first conductive plate in a first direction perpendicular to the thickness direction, A third conductive plate having a third main surface facing the other side in the thickness direction and facing the first main surface and the second main surface, and a third back surface facing one side in the thickness direction, and spaced apart from the first conductive plate and the second conductive plate on one side in the thickness direction, A first semiconductor element having a switching function is disposed between the first main surface and the third main surface in the thickness direction, A second semiconductor element having a switching function is disposed between the third main surface and the second main surface in the thickness direction, The first input terminal, which is electrically connected to the first conductive plate and is the positive electrode, The second input terminal, which is electrically connected to the second conductive plate and is the negative terminal, Output terminals that are electrically connected to the third conductive plate, The device comprises a sealing resin covering at least a portion of each of the first conductive plate, the second conductive plate, and the third conductive plate, a portion of each of the first input terminal, the second input terminal, and the output terminal, and the first semiconductor element and the second semiconductor element. A semiconductor device in which, when viewed in the thickness direction, the area of ​​the first conductive plate is larger than the area of ​​the second conductive plate.

2. The semiconductor device according to claim 1, wherein the first back surface, the second back surface, and the third back surface are exposed from the sealing resin.

3. The semiconductor device according to claim 2, further comprising an insulating layer covering each of the first back surface, the second back surface, and the third back surface.

4. The first back surface, the second back surface, and the third back surface are covered with the sealing resin. The semiconductor device according to claim 1, wherein the thermal conductivity of the sealing resin is 5 W / mk or more.

5. The sealing resin has a resin main surface facing one side in the thickness direction and a resin back surface facing the other side. The first dimension between the first back surface and the resin back surface in the thickness direction is smaller than the thickness of the first conductive plate. The second dimension between the second back surface and the resin back surface in the thickness direction is smaller than the thickness of the second conductive plate. The semiconductor device according to claim 4, wherein the third dimension between the third back surface and the resin main surface in the thickness direction is smaller than the thickness of the third conductive plate.

6. A first insulating layer is disposed on the other side in the thickness direction relative to the first back surface, and overlaps the first back surface and the second back surface when viewed in the thickness direction, The semiconductor device according to claim 1, further comprising: a second insulating layer disposed on one side in the thickness direction with respect to the third back surface and overlapping with the third back surface when viewed in the thickness direction.

7. The first input terminal has a first extension that is exposed from the sealing resin and extends in a second direction perpendicular to both the thickness direction and the first direction, The second input terminal has a second extension that is exposed from the sealing resin and extends in the second direction, The semiconductor device according to claim 1, wherein the output terminal is exposed from the sealing resin and has a third extension that extends in the second direction.

8. The first extension is located on one side in the second direction with respect to the first conductive plate and extends to one side in the second direction. The second extension is located on one side in the second direction with respect to the second conductive plate and extends to one side in the second direction. The semiconductor device according to claim 7, wherein the third extension is located on one side in the second direction with respect to the third conductive plate and extends in the same direction.

9. The semiconductor device according to claim 8, wherein the first extension, the second extension, and the third extension overlap each other when viewed in the first direction.

10. The device further comprises a first control terminal and a second control terminal for controlling the first semiconductor element and the second semiconductor element, The semiconductor device according to claim 7, wherein the sealing resin covers a portion of each of the first control terminal and the second control terminal.

11. The first control terminal is spaced apart from the first conductive plate in the second direction and extends in the second direction. The semiconductor device according to claim 10, wherein the second control terminal is spaced apart from the third conductive plate in the second direction and extends in the second direction.

12. The present invention further comprises a first conductive bonding material and a second conductive bonding material. The first semiconductor element has a first source electrode facing one side in the thickness direction and a first drain electrode facing the other side in the thickness direction. The second semiconductor element has a second source electrode facing the other side in the thickness direction and a second drain electrode facing one side in the thickness direction. The first conductive bonding material electrically connects the first main surface and the first drain electrode, The semiconductor device according to claim 1, wherein the second conductive bonding material electrically bonds the third main surface and the second drain electrode.

13. A first metal portion interposed between the first source electrode and the third main surface, and which provides electrical conductivity between the first source electrode and the third main surface, The semiconductor device according to claim 12, further comprising a second metal portion interposed between the second source electrode and the second main surface, and which provides electrical conductivity between the second source electrode and the second main surface.

14. The first conductive bonding material includes a first base layer made of metal, a first layer interposed between the first base layer and the first drain electrode and bonded in direct contact with each other at the bonding interface with the first drain electrode, and a second layer interposed between the first base layer and the first conductive plate and bonded in direct contact with each other at the bonding interface with the first conductive plate. The semiconductor device according to claim 12, wherein the second conductive bonding material includes a second base layer made of metal, a third layer interposed between the second base layer and the second drain electrode and bonded in direct contact with each other at the bonding interface with the second drain electrode, and a fourth layer interposed between the second base layer and the third conductive plate and bonded in direct contact with each other at the bonding interface with the third conductive plate.

15. Each of the first base layer and the second base layer contains aluminum, The semiconductor device according to claim 14, wherein each of the first, second, third, and fourth layers contains silver.

16. The semiconductor device according to claim 1, wherein each of the first conductive plate, the second conductive plate, and the third conductive plate contains copper.

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