Selective deposition of carbon films and their use

Selective deposition of carbon films and self-aligned vias using chemical vapor deposition addresses misalignment issues in semiconductor manufacturing, improving device yield and reducing costs by ensuring precise via alignment and lower resistance.

JP7874965B2Active Publication Date: 2026-06-17APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
APPLIED MATERIALS INC
Filing Date
2019-11-21
Publication Date
2026-06-17

AI Technical Summary

Technical Problem

The semiconductor industry faces challenges in device miniaturization due to complex manufacturing steps and misalignment issues in via formation, leading to potential short circuits, increased via resistance, and higher manufacturing costs.

Method used

A method for selectively depositing carbon films and forming self-aligned vias using chemical vapor deposition, which allows for controlled deposition on metal surfaces while minimizing deposition on dielectric surfaces, and forming carbon pillars that self-align with conductive wires, eliminating misalignment issues.

Benefits of technology

This method achieves precise alignment of vias, reduces via resistance, prevents short circuits, and enhances device yield and reduces manufacturing costs by using carbon pillars that are easier to remove than metal oxide pillars.

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Abstract

Methods for depositing carbon films are described. Some embodiments selectively deposit the carbon films on metal surfaces over dielectric surfaces. Some embodiments selectively form carbon pillars on metal surfaces over dielectric surfaces. Some embodiments use the carbon pillars in forming self-aligned vias.
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