Semiconductor device and method for manufacturing a semiconductor device

JP7875037B2Active Publication Date: 2026-06-17KK TOSHIBA +1

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
KK TOSHIBA
Filing Date
2022-06-08
Publication Date
2026-06-17

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Abstract

To provide a semiconductor device and a manufacturing method of the semiconductor device, capable of improving electrical characteristics and reducing destruction.SOLUTION: A semiconductor device according to an embodiment includes a bed portion, a semiconductor element, and a connector. The semiconductor element includes a first electrode electrically connected to the bed portion, and a second electrode provided on a surface opposite to the first electrode in a first direction. The connector includes a first connection portion having a first surface electrically connected to the second electrode, the first surface being at an incline from an edge portion towards a center of the first surface, and a lead portion electrically connected to the first connection portion and provided to be separated from the bed portion.SELECTED DRAWING: Figure 2
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Claims

1. The bed section, A first electrode electrically connected to the bed portion, A second electrode is provided on the surface facing the first electrode in the first direction, A semiconductor element having, A first surface electrically connected to the second electrode, and a second surface located on the opposite side of the first surface The first surface is inclined in a direction from the end of the first surface toward the center. First connection part and A lead portion is electrically connected to the first connection portion and is provided spaced apart from the bed portion. 、 A connector having, The thickness of the first connecting portion in the first direction decreases from the end towards the center. It became, The inclination of the first surface extends to at least a portion of the end of the first connection part of the semiconductor device.

2. The semiconductor according to claim 1, wherein the first connecting portion has a first surface that is inclined over its entire surface. Device.

3. The semiconductor device further includes a bonding material, The first connecting portion is a third connecting portion that connects the central end of the first surface and the central end of the second surface. It has a further surface, The semiconductor device according to claim 1, wherein the bonding material is in contact with the first surface and the third surface.

4. The semiconductor device according to claim 1, wherein the second surface is perpendicular to the first direction.

5. The first connecting portion further has a through hole that penetrates in the first direction, according to claim 1. The described semiconductor device.

6. The inclination is provided in a pyramidal or conical shape in the first direction, as described in claim 1. Semiconductor equipment.

7. The first surface is further provided with grooves in the direction from the edge of the first surface toward the center. The semiconductor device according to claim 1.

8. The connector has a second connection portion that electrically connects the first connection portion and the lead portion. Furthermore, The semiconductor according to claim 1, wherein the second connection portion and the lead portion are connected by solder. body equipment.

9. A method for manufacturing a semiconductor device according to any one of claims 1 to 8, A step of connecting the semiconductor element to the bed portion via a bonding material, The steps include connecting the connector to the second electrode via a bonding material, The bed portion and the first connection portion of the connector are fixed to the semiconductor element by heating. The process, A method for manufacturing a semiconductor device according to any one of claims 1 to 6.