Semiconductor equipment

Abstract

To provide a semiconductor device capable of obtaining stable characteristics.SOLUTION: According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first member. The first semiconductor region includes Alx1Ga1-x1 N (0≤x1<1). The second semiconductor region includes Alx2Ga1-x2 N (x1<x2≤1). The first member includes first and second regions. The second region is between the first region and a first electrode region of the second electrode. A part of the second region is between a second semiconductor portion of the second semiconductor region and a part of the second electrode. The second region includes at least one first element selected from a group consisting of Ti, Al, Ga, Ni, Nb, Mo, Ta, Hf, V, and Au. The first region does not include the first element, or concentration of the first element in the first region is lower than concentration of the first element in the second region.SELECTED DRAWING: Figure 1

Claims

1. First electrode and, A second electrode, wherein the direction from the first electrode to the second electrode is along the first direction, and the second electrode includes the first electrode region and the second electrode region, A third electrode, wherein the position of the third electrode in the first direction is between the position of the first electrode in the first direction and the position of the second electrode in the first direction. Al ｘ１ Ga １－ｘ１ A first semiconductor region including N (0 ≤ x1 < 1), wherein the first semiconductor region includes a first subregion, a second subregion, a third subregion, a fourth subregion and a fifth subregion, the direction from the first subregion to the first electrode is along a second direction intersecting the first direction, the direction from the second subregion to the second electrode is along the second direction, the direction from the third subregion to the third electrode is along the second direction, the fourth subregion is between the first subregion and the third subregion in the first direction, and the fifth subregion is between the third subregion and the second subregion in the first direction, Al ｘ２ Ga １－ｘ２ A second semiconductor region including N (x1 < x2 ≤ 1), wherein the second semiconductor region includes a first semiconductor portion and a second semiconductor portion, the direction from the fourth portion region to the first semiconductor portion is along the second direction, and the direction from the fifth portion region to the second semiconductor portion is along the second direction, and the second semiconductor region and A first member comprising a first region and a second region, wherein the second semiconductor portion is located between the fifth partial region and the first region in the second direction, at least a portion of the second region is located between at least a portion of the first region and the first electrode region in the first direction, and the aforementioned at least a portion of the second region is located between the second semiconductor portion and the second electrode region in the second direction, the first region comprising at least one second element selected from the group consisting of nitrogen and oxygen, and silicon, the second region comprising silicon, and the concentration of silicon in the second region being higher than the concentration of silicon in the first region, the first member, A semiconductor device equipped with the following features.

2. The semiconductor device according to claim 1, wherein the second region includes polysilicon.

3. First electrode and, A second electrode, wherein the direction from the first electrode to the second electrode is along the first direction, and the second electrode includes the first electrode region and the second electrode region, A third electrode, wherein the position of the third electrode in the first direction is between the position of the first electrode in the first direction and the position of the second electrode in the first direction. Al ｘ１ Ga １－ｘ１ A first semiconductor region including N (0 ≤ x1 < 1), wherein the first semiconductor region includes a first subregion, a second subregion, a third subregion, a fourth subregion and a fifth subregion, the direction from the first subregion to the first electrode is along a second direction intersecting the first direction, the direction from the second subregion to the second electrode is along the second direction, the direction from the third subregion to the third electrode is along the second direction, the fourth subregion is between the first subregion and the third subregion in the first direction, and the fifth subregion is between the third subregion and the second subregion in the first direction, Al ｘ２ Ga １－ｘ２ A second semiconductor region including N (x1 < x2 ≤ 1), wherein the second semiconductor region includes a first semiconductor portion and a second semiconductor portion, the direction from the fourth portion region to the first semiconductor portion is along the second direction, and the direction from the fifth portion region to the second semiconductor portion is along the second direction, and the second semiconductor region and The first member, the first member includes a first region and a second region, the second semiconductor portion is between the fifth partial region and the first region in the second direction, at least a part of the second region is between at least a part of the first region and the first electrode region in the first direction, at least a part of the second region is between the second semiconductor portion and the second electrode region in the second direction, the first region includes at least one second element selected from the group consisting of nitrogen and oxygen and silicon, and the second region is Al ｚ１ Ga １－ｚ１ The first member including N (0 ≦ z1 ≦ 1), Equipped with, A semiconductor device in which at least a portion of the first region lies between the first semiconductor portion and the third electrode in the second direction.

4. The semiconductor device according to claim 3, wherein the second region includes polycrystalline material.

5. The second region comprises at least one of the third and fourth elements, The third element comprises at least one selected from the group consisting of Si, Ge, and Sn. The semiconductor device according to claim 2 or 4, wherein the fourth element comprises at least one selected from the group consisting of Mg and Zn.

6. The first region is, A first compound film containing silicon and oxygen, Al ｙ２ Ga １－ｙ２ A second compound film containing N (0 < y² ≤ 1), A third compound film containing silicon and nitrogen, Includes, The second compound film is located between the second semiconductor portion and the first compound film. The semiconductor device according to any one of claims 1 to 5, wherein the third compound film is located between the second semiconductor portion and the second compound film.

7. At least a portion of the third electrode is located between the first semiconductor portion and the second semiconductor portion in the first direction. The first member further includes a third region, a fourth region, and a fifth region. The third region is located between the third subregion and at least a portion of the third electrode in the second direction. The fourth region is located in the first direction between the first semiconductor portion and at least a part of the third electrode. The fifth region is located between at least a portion of the third electrode and the second semiconductor portion in the first direction. The first member is, A first compound film containing silicon and oxygen, Al ｙ２ Ga １－ｙ２ A second compound film containing N (0 < y² ≤ 1), A third compound film containing silicon and nitrogen, Includes, The first compound film is located between the third partial region and at least a portion of the third electrode in the third region, between the first semiconductor portion and at least a portion of the third electrode in the fourth region, and between at least a portion of the third electrode and the second semiconductor portion in the fifth region. The second compound film is located between the third subregion and the first compound film in the third region, between the first semiconductor portion and the first compound film in the fourth region, between the first compound film and the second semiconductor portion in the fifth region, and between the second semiconductor portion and the first compound film in the first region. The semiconductor device according to any one of claims 1 to 5, wherein the third compound film is located between the second semiconductor portion and the second compound film in the first region.

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