Semiconductor equipment

JP7875349B2Active Publication Date: 2026-06-17SEMICON ENERGY LAB CO LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2025-06-05
Publication Date
2026-06-17

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Abstract

To provide a semiconductor device that shifts the level of a negative voltage and / or a positive voltage.SOLUTION: A semiconductor device includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, an input terminal, and an output terminal. A first terminal of the first transistor is electrically connected to a first terminal of the second transistor and the output terminal. A second terminal of the second transistor is electrically connected to a first terminal of the third transistor. A first terminal of the fourth transistor is electrically connected to a gate of the second transistor and a first terminal of the first capacitor. A second terminal of the first capacitor is electrically connected to the input terminal. The first transistor, the second transistor, the third transistor, and the fourth transistor have the same polarity.SELECTED DRAWING: Figure 8
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Claims

1. Having a first transistor to a fifth transistor, Either the source or the drain of the first transistor is always in electrical contact with the first wiring. The source or drain of the first transistor is always in electrical contact with the second wiring. The gate of the first transistor is always in electrical contact with the third wiring. Either the source or the drain of the second transistor is always in electrical contact with the first wiring. The source or drain of the second transistor is always in electrical contact with the source or drain of the third transistor. The source or drain of the third transistor is always in electrical contact with the fourth wiring. The gate of the third transistor is always in electrical contact with the fifth wiring. Either the source or drain of the fourth transistor is always in contact with the gate of the second transistor. The source or drain of the fourth transistor is always in electrical contact with the fourth wiring. Either the source or the drain of the fifth transistor is always in contact with the gate of the second transistor. The source or drain of the fifth transistor is always in contact with the gate of the second transistor. The gate of the fifth transistor is always in electrical contact with the sixth wiring. The sixth wiring comprises a period during which a first potential is applied to the sixth wiring, and a period during which a second potential lower than the first potential is applied to the sixth wiring. Semiconductor equipment.

2. Having a first transistor to a fifth transistor, Either the source or the drain of the first transistor is always in electrical contact with the first wiring. The source or drain of the first transistor is always in electrical contact with the second wiring. The gate of the first transistor is always in electrical contact with the third wiring. Either the source or the drain of the second transistor is always in electrical contact with the first wiring. The source or drain of the second transistor is always in electrical contact with the source or drain of the third transistor. The source or drain of the third transistor is always in electrical contact with the fourth wiring. The gate of the third transistor is always in electrical contact with the fifth wiring. Either the source or drain of the fourth transistor is always in contact with the gate of the second transistor. The source or drain of the fourth transistor is always in electrical contact with the fourth wiring. Either the source or the drain of the fifth transistor is always in contact with the gate of the second transistor. The source or drain of the fifth transistor is always in contact with the gate of the second transistor. The gate of the fifth transistor is always in electrical contact with the sixth wiring. The gate of the fourth transistor is provided with a potential that causes the fourth transistor to conduct or a potential that causes the fourth transistor to become non-conductive. When the fourth transistor is conducting, the potential of the fourth wiring is applied to the gate of the second transistor via the fourth transistor. The sixth wiring comprises a period during which a first potential is applied to the sixth wiring, and a period during which a second potential lower than the first potential is applied to the sixth wiring. Semiconductor equipment.

3. In Claim 1 or Claim 2, Each of the first to fifth transistors has the same polarity. Semiconductor equipment.