Method, system, and apparatus for substrate processing using one or more amorphous carbon hard mask layers

Abstract

Aspects generally relate to methods, systems, and apparatus for treating a substrate with one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating improved etch selectivity. In one implementation, a method for treating a substrate includes depositing one or more amorphous carbon hardmask layers on a substrate and performing a rapid thermal annealing step on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal annealing step lasts for an annealing time of 60 seconds or less. The rapid thermal annealing step includes heating the substrate to an annealing temperature in the range of 600° C. to 1000° C. The method includes etching the substrate after performing the rapid thermal annealing step.

Description

[Technical Field]

[0001]

[0001] The embodiments generally relate to a method, system, and apparatus for processing a substrate using one or more amorphous carbon hard mask layers. In one embodiment, the film stress is changed while promoting improved etching selectivity. [Background technology]

[0002]

[0002] The hard mask layer of the substrate may have high compressive stress and may be unsuitable for processing. For example, high compressive stress can cause delamination, which may impair the performance of the device. Efforts to reduce compressive stress may involve long process times, heavy resource consumption, reduced throughput, and loss of the hard mask layer. Furthermore, efforts to reduce compressive stress may result in a loss of etching selectivity.

[0003]

[0003] Therefore, improved methods, systems, and apparatus are needed to facilitate improved etching selectivity and modification of film stress in order to shorten processing time, reduce resource consumption, improve throughput, and reduce hard mask layer loss. [Overview of the Initiative]

[0004]

[0004] The embodiments generally relate to methods, systems, and apparatus for substrate processing using one or more amorphous carbon hard mask layers. In one embodiment, film stress is changed while promoting improved etching selectivity.

[0005]

[0005] In one mounting configuration, the substrate processing method includes depositing one or more amorphous carbon hard mask layers on the substrate, and performing a rapid thermal annealing process on the substrate after depositing one or more amorphous carbon hard mask layers. The rapid thermal annealing process lasts for an annealing time of 60 seconds or less. The rapid thermal annealing process includes heating the substrate to an annealing temperature in the range of 600°C to 1000°C. The method includes etching the substrate after performing the rapid thermal annealing process.

[0006]

[0006] In one packaging configuration, a non-transient computer-readable medium for processing the substrate includes instructions that, when executed, cause a plurality of steps to be performed. The plurality of steps include depositing one or more amorphous carbon hard mask layers on the substrate and, after depositing one or more amorphous carbon hard mask layers, performing a rapid thermal annealing step on the substrate. The rapid thermal annealing step lasts for an annealing time of 60 seconds or less. The rapid thermal annealing step includes heating the substrate to an annealing temperature in the range of 600°C to 1000°C. The plurality of steps also include etching the substrate after performing the rapid thermal annealing step.

[0007]

[0007] In one packaging configuration, the substrate processing system includes a deposition chamber, an annealing chamber, a transfer chamber coupled to the deposition chamber and the annealing chamber, and a cryogenic etching chamber. The system includes a controller that, when executed, has a command to deposit one or more amorphous carbon hard mask layers on the substrate in the deposition chamber. When the command is executed, after one or more amorphous carbon hard mask layers have been deposited on the substrate, the annealing chamber is instructed to perform a rapid thermal annealing process on the substrate. The rapid thermal annealing process lasts for an annealing time of 60 seconds or less. The rapid thermal annealing process includes heating the substrate to an annealing temperature in the range of 600°C to 1000°C. When the command is executed, after the rapid thermal annealing process has been performed, the cryogenic etching chamber is instructed to etch the substrate.

[0008]

[0008] In order to understand the features of the present disclosure described above in detail, the present disclosure summarized above will be described more specifically with reference to embodiments illustrated in part in the accompanying drawings. However, it should be noted that the accompanying drawings are merely illustrative of exemplary embodiments and should not be considered to limit the scope of the present disclosure, and that the present disclosure may also permit other equally valid embodiments. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic partial diagram of a circuit board processing system according to one implementation configuration. [Figure 2] This is a schematic cross-sectional view of a substrate processing chamber relating to one mounting configuration. [Figure 3] This is a schematic partial cross-sectional view of an annealing chamber according to one implementation configuration. [Figure 4] This is a schematic partial cross-sectional view of an etching chamber according to one implementation configuration. [Figure 5] This is a schematic diagram of a substrate processing method relating to one mounting configuration.

[0010]

[0014] For ease of understanding, the same reference numerals are used to indicate identical elements common to the drawings whenever possible. Elements and features of one embodiment are considered to be usefully incorporated into other embodiments without further detail. [Modes for carrying out the invention]

[0011]

[0015] The embodiments generally relate to a method, system, and apparatus for processing a substrate using one or more amorphous carbon hard mask layers. In one embodiment, the film stress is changed while promoting improved etching selectivity.

[0012]

[0016] Figure 1 is a schematic partial diagram of a substrate processing system 100 according to one packaging configuration. The system 100 includes a cluster tool 103 having a plurality of process chambers 101, 102. Although process chambers 101, 102 are shown, the system 100 is intended to include more than five or fewer process chambers arranged around a transfer chamber 112 and coupled to the transfer chamber 112. The cluster tool 103 may be coupled by communication, electrical, mechanical, or other means to one or more additional cluster tools and / or one or more other systems, collectively shown in Figure 1 as a second cluster tool 122. Substrates may be transported between the cluster tool 103 and the second cluster tool 122 using a transfer system and exposed to ambient conditions. In one embodiment, which can be combined with other embodiments, substrates are transported from the factory interface 114 of the cluster tool 103 to the second cluster tool 122, or from the second cluster tool 122 into the factory interface 114 of the cluster tool 103. The substrate can be transferred from the factory interface 114 to the transfer chamber 112. The transfer area 118 of the transfer chamber 112 may be an environmentally controlled environment, such as an environment where temperature and / or pressure can be set, maintained, and / or adjusted. In one embodiment, which can be combined with other embodiments, the transfer chamber 112 is held under vacuum pressure. A central transfer robot 116 is configured to transfer the substrate within and between the process chambers 101, 102. The system 100 is intended to include multiple overlapping chambers of process chambers 101, 102.

[0013]

[0017] The cluster tool 103 includes a deposition chamber 101 and an annealing chamber 102 coupled to a transfer chamber 112. The disclosure intends that other process chambers, such as a cleaning chamber configured to perform a cleaning process on a substrate, may be arranged around the transfer chamber 112 and coupled to the transfer chamber 112. The second cluster tool 122 includes a lithography chamber 123 and an etching chamber 124. The deposition chamber 101 is configured to deposit one or more amorphous carbon hard mask layers on a substrate. The annealing chamber 102 is configured to perform a rapid thermal annealing process on the substrate. The etching chamber 124 is configured to perform an etching process on the substrate, such as a cryogenic etching process. The lithography chamber 123 is configured to perform a patterning process on the substrate, such as a photolithography patterning process. The deposition chamber 101, the annealing chamber 102, and the transfer chamber 112 are mounted on the frame 104 of the cluster tool 103.

[0014]

[0018] Controller 120 is coupled to cluster tool 103 and a second cluster tool 122 of system 100 to control the processes of the deposition chamber 101, annealing chamber 102, lithography chamber 123, and etching chamber 124. Controller 120 includes a central processing unit (CPU) 131, a memory 132 containing instructions, and support circuits 133 for the CPU 131. Controller 120 controls system 100 directly or via other computers and / or controllers (not shown) coupled to cluster tool 103 and the second cluster tool 122. Controller 120 is any form of general-purpose computer processor used in industrial environments to control various chambers and equipment, as well as subprocessors on or within them.

[0015]

[0019] Memory 132, or non-transient computer-readable media, is one or more readily available memories such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage. Support circuitry 133 is coupled to the CPU 131 and assists the CPU 131 (processor). Support circuitry 133 includes cache, power supply, clock circuitry, input / output circuitry, and subsystems. Board processing parameters and processes are stored in memory 132 as software routines that are executed or activated to make the controller 120 a purpose-specific controller for controlling the processes of system 100. The controller 120 is configured to perform any of the methods described herein. When executed, instructions stored in memory 132 cause one or more of the processes 501-508 of method 500 to be performed.

[0016]

[0020] System 100 includes one or more measuring sensors for monitoring the state and / or characteristics of one or more aspects of System 100, such as the transfer area 118 of the transfer chamber 112, the processing area of ​​the deposition chamber 101, the processing area of ​​the annealing chamber 102, the processing area of ​​the lithography chamber 123, and / or the processing area of ​​the etching chamber 124. System 100 includes one or more modules 190 (showing one) having one or more sensors 191a to 191d (showing four). Module 190 having sensors 191a to 191d is positioned in the transfer area 118 of the transfer chamber 112. The disclosure intends that one or more modules having one or more sensors may be positioned in one or more of the deposition chamber 101, the annealing chamber 102, the lithography chamber 123, and / or the etching chamber 124.

[0017]

[0021] Module 190, which has sensors 191a to 191d, may be mounted on one or more of the chambers 101, 102, 112, 123, and 124, such as being mounted on the inner surface of each chamber 101, 102, 112, 123, or 124. At least one of the sensors 191a to 191d is configured to detect, monitor, and / or measure contaminants and their concentrations in the transfer area 118, for example, while the central transfer robot 116 is transferring the substrate. In one example, one or more sensors 191a to 191d include one or more in situ measurement sensors.

[0018]

[0022] At least one of the sensors 191a to 191d is configured to detect, monitor, and / or measure the state and / or characteristics of the substrate being processed in system 100, such as while the substrate is being transported by the central transfer robot 116 or while the substrate is being processed in process chambers 101, 102, 123, and 124. In one example, one or more sensors 191a to 191d include one or more on-wafer spectroscopic sensors and / or one or more contaminant sensors. In another example, one or more sensors 191a to 191d include one or more oxygen sensors, one or more water vapor sensors, one or more X-ray fluorescence (XRF) sensors and / or one or more X-ray photoelectron spectroscopy (XPS) sensors. In one embodiment, which can be combined with other embodiments, sensors 191a to 191d are configured to measure the thickness of one or more amorphous carbon hard mask layers on the substrate (e.g., before and / or after a rapid thermal annealing process), the warpage of the substrate, and / or the film stress of one or more amorphous carbon hard mask layers on the substrate.

[0019]

[0023] The plurality of instructions executed by the controller 120 include instructions to direct one or more sensors 191a - 191d to detect, monitor, and / or measure contaminants, conditions, and / or properties. The instructions within the memory 132 of the controller 120 may include one or more machine learning / artificial intelligence algorithms that can be executed in addition to the processes described herein. As an example, the machine learning / artificial intelligence algorithms executed by the controller 120 can optimize and change process parameters based on one or more sensor measurements obtained by one or more sensors 191a - 191d. The process parameters can include, for example, anneal time, anneal temperature, anneal pressure, anneal gas composition, anneal flow rate, deposition temperature, deposition pressure, first flow rate, second flow rate, total flow rate, reactive precursor gas composition, inert gas composition, etch temperature, hard mask thickness, film stress, substrate warp, hydrogen content, etch selectivity, Young's modulus, and / or film density (each described later).

[0020]

[0024] One or more machine learning / artificial intelligence algorithms can take into account the substrate warp, the measured film thickness after a rapid thermal annealing process, and / or the measured film stress after a rapid thermal annealing process to optimize process parameters such as the annealing temperature. In one embodiment that can be combined with other embodiments, one or more machine learning / artificial intelligence algorithms can measure the film thickness (such as hard mask thickness) and film stress after a rapid thermal annealing process and determine whether to repeat the deposition process and / or the rapid thermal annealing process one or more additional times. In one embodiment that can be combined with other embodiments, one or more machine learning / artificial intelligence algorithms can determine the optimized annealing time required for one or more amorphous carbon hard mask layers to achieve a tensile film stress or a neutral film stress such as a film stress of 100 MPa or less. In one example that can be combined with other examples, the warp of the incoming substrate is measured, and one or more machine learning / artificial intelligence algorithms determine the optimized annealing time. In one embodiment that can be combined with other embodiments, one or more machine learning / artificial intelligence algorithms executed by the controller 120 determine the optimized annealing time, the optimized annealing temperature, the optimized annealing pressure, the optimized annealing gas composition, the optimized annealing flow rate, and / or the number of repetitions of the rapid thermal annealing process.

[0021]

[0025] FIG. 2 is a schematic cross-sectional view of a substrate processing chamber 200 according to one implementation. The substrate processing chamber 200 may be, for example, a chemical vapor deposition (CVD) chamber or a plasma CVD (PECVD) chamber. The present disclosure contemplates that other chambers such as an atomic layer deposition (ALD) chamber or a physical vapor deposition (PVD) chamber may be used. The substrate processing chamber 200 is a deposition chamber that can be used as the deposition chamber 101 of the system 100 shown in FIG. 1.

[0022]

[0026] The substrate processing chamber 200 comprises a chamber body 202 and a chamber lid 204 disposed on the chamber body 202. The chamber body 202 includes an internal region 206. The disclosure intends that the chamber body 202 may consist of a single body or two or more bodies. The chamber body 202 includes one or more side walls and a base. The substrate processing chamber 200 includes a gas distribution assembly 216 coupled to or disposed on the chamber lid 204 to supply a flow of one or more processing gases 209 to the processing region 210 through a shower head 201. The one or more processing gases may include one or more of argon and / or C3H6 among other gases. In one example, the one or more processing gases include one or more reactive precursor gases and one or more inert gases (for generating plasma). The shower head 201 includes a backing plate 226 and a face plate 230. The gas distribution assembly 216 includes a gas manifold 218 coupled to a gas inlet passage 220 formed in the chamber lid 204. The gas manifold 218 receives one or more flows of process gas from one or more gas sources 222 (two shown). The flows of process gas received from one or more gas sources 222 are distributed across the gas box 224, flow through a plurality of openings 291 in the backing plate 226, and further distributed across the plenum 228 defined by the backing plate 226 and the face plate 230. The flow of process gas 209 then flows into the processing area 210 of the internal area 206 through one or more gas openings 232 formed in the lower surface 219 of the face plate 230 of the showerhead 201.

[0023]

[0027] The internal region 206 includes a pedestal 238 positioned in the chamber body 202. The pedestal 238 supports the substrate 236 within the substrate processing chamber 200. The pedestal 238 supports the substrate 236 on its support surface 239. The pedestal 238 includes a heater and electrodes positioned within it. The electrodes can receive a direct current (DC) voltage, radio frequency (RF) energy, or alternating current (AC) energy to facilitate processing. The pedestal 238 is positioned to be movable in the internal region 206 by a lift system 295. The movement of the pedestal 238 facilitates the transfer of the substrate 236 to and from the internal region 206 through a slit valve formed through the chamber body 202. The pedestal 238 can also be moved to different processing positions for processing the substrate 236.

[0024]

[0028] During substrate processing, when a processing gas (such as processing gas 209) flows into the processing area 210, a heater heats the pedestal 238 and the support surface 239. Also during substrate processing, the electrodes of the pedestal 238 propagate radio frequency (RF) energy, alternating current (AC), or direct current (DC) voltage to promote plasma generation in the processing area 210 and / or promote chucking of the substrate 236 to the pedestal 238. This disclosure also intends that a power supply may be coupled to the showerhead 201 to supply RF energy, AC, or DC voltage to promote plasma generation. The heat, gas, and energy from the electrodes of the pedestal 238 promote the deposition of a film in the form of one or more amorphous carbon hard mask layers on the substrate 236 during substrate processing. The electrodes of the faceplate 230 and the pedestal 238, which are grounded via coupling with the chamber body 202, promote the formation of capacitive plasma coupling. When power is supplied to the electrodes of the pedestal 238, an electric field is generated between the faceplate 230 and the pedestal 238, causing the atoms of the gas present in the processing region 210 between the pedestal 238 and the faceplate 230 to be ionized and emit electrons. The ionized atoms are accelerated toward the pedestal 238, promoting the formation of one or more amorphous carbon hard mask layers on the substrate 236.

[0025]

[0029] A pumping device 203 is positioned in the substrate processing chamber 200. The pumping device 203 facilitates the removal of gases from the internal region 206 and the processing region 210. The gases exhausted by the pumping device 203 include one or more of the processing gases and processing residues. The processing residues may be generated from the process of depositing a film on the substrate 236. The pumping device 203 includes a pumping liner 260 positioned on the stepped surface 293 of the chamber body 202 and an isolator ring 259 positioned between the pedestal 238 and the pumping liner 260.

[0026]

[0030] The substrate processing chamber 200 includes a purge gas inlet 213 located at the bottom of the chamber body 202. The purge gas inlet 213 is an opening formed in the bottom surface of the chamber body 202. The purge gas inlet 213 is fluidly connected to a purge gas source 214 that supplies one or more purge gases 279 to the purge gas inlet 213. The one or more purge gases 279 include one or more inert gases, such as one or more of Ar and / or N2. The one or more purge gases 279 flow along the purge gas channel 211. A bowl 212 is located in the internal region 206. The bowl 212 defines the purge gas region 215. One or more bellows 217 may be located in the purge gas region 215. One or more bellows 221 are located above the horizontal portion 212b of the bowl 212 and below the bottom surface 298 of the pedestal 238. One or more bellows 221 separate dead volume 263 from a portion of the purge gas flow path 211 located between the one or more bellows 221 and the vertical portion 212a of the bowl 212. During the substrate processing process, while the processing gas 209 flows from the showerhead 201 into the processing area 210, the purge gas inlet 213 allows one or more purge gases 279 to flow into the purge gas area 215. The horizontal portion 212b of the bowl 212 includes one or more purge gas openings 297 that allow the purge gases 279 to flow from the purge gas area 215 into the purge gas flow path 211. The processing gases 209 and purge gases 279 merge and / or mix at or near the support surface 239. The processing gases 209 and purge gases 279 mix to form a mixed gas, which is exhausted by the pumping device 203. The pumping device 203 includes a pumping liner 260 and an isolator ring 259. The mixed gas is exhausted through the first conduit 276 and the second conduit 278, and through the foreline 272 to the vacuum pump 233. The vacuum pump 233 controls the pressure in the processing area 210 and exhausts the gas and residue from the processing area 110.

[0027]

[0031] Figure 3 is a schematic partial cross-sectional view of an annealing chamber 300 according to one implementation configuration. The annealing chamber 300 is a rapid thermal annealing chamber. The annealing chamber 300 can be used as the annealing chamber 102 of the system 100 in Figure 1. The substrate 236 to be processed in the annealing chamber 300 is supplied into the processing area 318 of the annealing chamber 300 through a valve (such as a slit valve) or an access port 313. The periphery of the substrate 236 is supported by an annular edge ring 314. The edge ring 314 has an annular inclined shelf 315 that contacts the corners of the substrate 236. The substrate 236 is oriented such that the processed feature portion 316 already formed on the upper surface of the substrate 236 faces upward toward the radiant heating device 324. The substrate 236 is a substrate processed in the deposition chamber 200 described above. The processed feature portion 316 includes one or more amorphous carbon hard mask layers.

[0028]

[0032] The annealing chamber 300 includes a chamber body 302 and a processing area 318 located within the chamber body 302. The chamber body 302 includes one or more side walls 303. The processing area 318 is defined on its upper side by a transparent quartz window 320. The annealing chamber 300 performs a rapid thermal annealing process on a substrate 236. In one embodiment, which can be combined with other embodiments, the rapid thermal annealing process can uniformly heat the substrate 236 at a rate of about 10°C per second or more, for example, at a rate of about 10°C per second to about 250°C per second or more. The ramp-down (cooling) rate of the rapid thermal annealing process is in the range of about 80°C per second to about 150°C per second. Aspects of the present disclosure are also applicable to flash annealing, such as annealing a substrate in less than 5 seconds, for example, less than 1 second, or in several milliseconds.

[0029]

[0033] Three lift pins 322 move up and down to engage with and support the bottom surface (back surface, etc.) of the substrate 236 when the substrate 236 is handled by a substrate transfer device such as a robot. The robot's robot blade and / or robot arm extend through a valve or access port 313 to supply the substrate 236 into the annealing chamber 300 and onto the lift pins 322. The substrate 236 is then lowered onto the edge ring 314. To heat the substrate 236 in the processing area 318, a radiant heater 324 is positioned above the window 320 to direct radiant energy toward the substrate 236. In the annealing chamber 300, the radiant heater includes a plurality of heating lamps 326 positioned in each reflector tube 327 arranged in a hexagonal close-packed array above the window 320. The plurality of heating lamps 326 include high-brightness tungsten halogen lamps. The plurality of heating lamps 326 are positioned above the edge ring 314.

[0030]

[0034] The heating lamp 326 involves resistance heating to rapidly increase the temperature of the radiant source, or ramp up, in order to raise the temperature of the processing area 318 and the substrate 236. The heating lamp 326 may include incandescent lamps and tungsten halogen incandescent lamps having a glass or silica envelope surrounding a filament, as well as flash lamps having a glass or silica envelope surrounding a gas such as xenon. The heating lamp 326 may also include arc lamps having a glass, ceramic, or silica envelope surrounding a gas or vapor. Such lamps emit radiant heat when a voltage is applied to the gas. As used herein, the term lamp is intended to include lamps having an envelope surrounding a heat source. The “heat source” of the lamp refers to a material or element that can raise the temperature of the substrate 236, such as a filament or gas to which a voltage can be applied. This disclosure envisions that, instead of, or in addition to, a plurality of heating lamps 326 for heating the substrate 236, one or more annealing lasers and / or one or more resistive heater elements embedded in the pedestal (on which the substrate 236 is supported) may be used.

[0031]

[0035] A reflector 328, extending parallel to the substrate 236 and over a larger area than the substrate 236, and facing the bottom surface of the substrate 236, efficiently reflects back thermal radiation emitted from the substrate 236. In one embodiment, which can be combined with other embodiments, a reflector plate is included to increase the apparent emissivity of the substrate 236. The reflector 328, which may have a gold coating or a multilayer dielectric interference mirror, effectively forms a blackbody cavity on the back side of the substrate 236 that functions to distribute heat from the warm to the cool parts of the substrate 236. The chamber body 302 includes an upper wall 321 and a lower wall 353. The reflector 328 is positioned on a water-cooled base formed in the lower wall 353, which is made of a material such as a metal selected for its ability to heat-sink excess radiation from the substrate 236 during cooling, etc. The upper wall 321 includes a quartz window 320, and the lower wall 353 is substantially parallel to the upper wall 321. The lower wall 353 may be made of a highly opaque material such as metal.

[0032]

[0036] The edge ring 314 is positioned and supported on a support cylinder 331 and is movable relative to the support cylinder 331 and rotor 330 as the edge ring 314 expands and / or contracts due to thermal expansion and / or contraction. The edge ring 314 can also be moved using the support cylinder 331 and rotor 330. The support cylinder 331 may include thermal insulation. The support cylinder 331 may be supported on the rotor 330 and coupled to the rotor 330, or formed as part of the rotor 330. The rotor 330 and support cylinder 331 are rotatable. The rotor 330 is cylindrical. The rotor 330 is magnetically levitated within the chamber body 302. The rotor 330 is magnetically coupled to a drive ring 332 positioned outside one or more side walls 303 of the chamber body 302. Gravity and a lower shoulder extending downward from the lower surface of the edge ring 315 facilitate holding the edge ring 314 on the support cylinder 331 and rotor 330. In one embodiment, which can be combined with other embodiments, the drive ring 332 is a rotatable flange and is magnetically coupled to the rotor 330 so that the rotor 330 rotates as the drive ring 332 rotates. In such an embodiment, a motor rotates the drive ring 332 to rotate the rotor 330. In one embodiment, which can be combined with other embodiments, the drive ring 332 is fixed to the chamber body 302 and includes an electric coil that, when powered, generates a magnetic force to magnetically rotate and / or levitate the rotor 330. As the rotor 330 rotates, the edge ring 314 and the substrate 236 supported on the edge ring 314 rotate around the central axis 334 of the substrate 236.

[0033]

[0037] The heating lamp 326 may be divided into heating zones arranged in a roughly ring shape around a central axis 334. A control circuit changes the voltage supplied to the heating lamp 326 in different zones, thereby adjusting the radial distribution of radiant energy. One or more pyrometers 340 are coupled through one or more optical pipes 342 positioned to face the bottom surface of the substrate 236 through openings in the reflector 328. One or more pyrometers 340 measure the temperature over the radius of the stationary or rotating substrate 236. The optical pipes 342 may be formed from various structures, including sapphire, metal, and silica fibers. The pyrometers 340 are positioned below the edge ring 314, which is positioned between the pyrometers 340 and the multiple heating lamps 326. In one embodiment, which can be combined with other embodiments, a film of reflective coating 350 may be positioned on the side of the window 320 facing the heating lamps 326. In one embodiment, which can be combined with other embodiments, the reflective coating 351 is positioned on the side of the window 320 facing the substrate 236. In the mounting configuration shown in Figure 1, the reflective coatings 350 and 351 are positioned on both sides of the window 320. The reflective coatings 350 and 351 make it easier for radiation in the pyrometer bandwidth to propagate through the reflective coatings 350 and 351, thereby facilitating accurate measurements by the pyrometer 340.

[0034]

[0038] Figure 4 is a schematic partial cross-sectional view of an etching chamber 400 according to one implementation configuration. The etching chamber 400 includes a substrate support assembly 401 that supports a substrate 236 annealed in the annealing chamber 300 as described above. The etching chamber 400 can be used as the etching chamber 124 of the system 100 in Figure 1. The etching chamber 400 may be a plasma processing chamber. The etching chamber 400 is a cryogenic etching chamber configured to carry out a cryogenic etching process. By dry reactive ion etching of the substrate 236 maintained at a cryogenic etching temperature, spontaneous etching can be reduced by causing ions to collide with the upward surface of the material placed on the substrate 236, thereby forming trenches with smooth, vertical sidewalls. For example, the diffusion of ions in the voids of a low-dielectric dielectric material placed on a substrate 236 uniformly maintained at a cryogenic etching temperature is reduced as ions continue to collide with the upward surface of the low-dielectric dielectric material, forming trenches with smooth, vertical sidewalls. Furthermore, cryogenic processing temperatures can improve the selectivity of etching between one material and another. For example, the selectivity between silicon (Si) and silicon dioxide (SiO2) increases exponentially as the temperature decreases.

[0035]

[0039] The etching chamber 400 includes a chamber body 402 having side walls 404, a bottom 406, and a lid 408 surrounding a processing area 410. An injection device 412 is coupled to the side walls 404 and / or lid 408 of the chamber body 402. A gas panel 414 is coupled to the injection device 412 to supply process gas into the processing area 410. The injection device 412 may consist of one or more nozzles or inlet ports, or alternatively, a showerhead. The process gas, along with any processing by-products, is removed from the processing area 410 through an exhaust port 416 formed in the side walls 404 or bottom 406 of the chamber body 402. The exhaust port 416 is coupled to a pumping system 440, which includes a throttle valve and a pump used to control the vacuum level within the processing area 410.

[0036]

[0040] A voltage is applied to the process gas to form a plasma within the processing area 410. The process gas may be voltageed by capacitively or inductively coupling RF power to the process gas. In the illustrated embodiment, which can be combined with other embodiments, a plurality of coils 418 are located above the lid 408 of the etching chamber 400 and coupled to an RF power supply 422 through a matching circuit 420. A substrate support assembly 401 is located in the processing area 410 below the injection device 412. The substrate support assembly 401 includes an electrostatic chuck (ESC) 403 and an ESC base assembly 405. The ESC base assembly 405 is coupled to the ESC 403 and an equipment plate 407. The equipment plate 407, supported by a ground plate 411, is configured to facilitate electrical, cooling, heating, and gas connections with the substrate support assembly 401. The ground plate 411 is supported by the bottom 406 of the etching chamber 400. An insulating plate 409 insulates the equipment plate 407 from the ground plate 411.

[0037]

[0041] The ESC base assembly 405 includes a base channel 450 coupled to a cryogenic cooler 417. In one embodiment, which can be combined with other embodiments, the cryogenic cooler 417 is fluid-coupled to the base channel 450 via a base inlet conduit 423 connected to the inlet of the base channel 450 and via a base outlet conduit 425 connected to the outlet of the base channel 450, so that the ESC base assembly 405 is maintained at a cryogenic etching temperature. In one embodiment, which can be combined with other embodiments described herein, the cryogenic cooler 417 is coupled to an interface box to control the flow rate of the base fluid. The base fluid may include a material capable of maintaining a cryogenic etching temperature such as below 0°C. The cryogenic cooler 417 supplies the base fluid, which circulates within the base channel 450 of the ESC base assembly 405. The base fluid flowing through the base channel 450 allows the ESC base assembly 405 to be maintained at a cryogenic etching temperature, thereby controlling the lateral temperature profile of the ESC 403 to help maintain the substrate 236 placed on the ESC 403 uniformly at a cryogenic etching temperature. In one embodiment, which can be combined with other embodiments described herein, the cryogenic cooler 417 is a single-stage cooler capable of operating to maintain the cryogenic temperature at the cryogenic etching temperature. In another embodiment, which can be combined with other embodiments described herein, the cryogenic cooler 417 is a two-stage cooler that utilizes a coolant inside a two-stage cooler to maintain the base fluid at a cryogenic etching temperature.

[0038]

[0042] The equipment plate 407 includes an equipment channel 451 coupled to a cooling device 419. The cooling device 419 is fluidly coupled to the equipment channel 451 via an equipment inlet conduit 427 connected to the inlet of the equipment channel 451 and via an equipment outlet conduit 429 connected to the outlet of the equipment channel 451, so that the equipment plate 407 is maintained at a predetermined ambient temperature. In one embodiment, which can be combined with other embodiments, the cryogenic cooling device 417 is coupled to an interface box to control the flow rate of the equipment fluid. The equipment fluid may include a material capable of maintaining an ambient temperature from about 0°C to about 60°C. The cooling device 419 supplies the equipment fluid that circulates within the equipment channel 451 of the equipment plate 407. The equipment fluid flowing within the equipment channel 451 enables the equipment plate 407 to be maintained at a predetermined ambient temperature, thereby helping to maintain the insulating plate 409 at ambient temperature.

[0039]

[0043] The ESC403 has a support surface 430 and a bottom surface 432 opposite to the support surface 430. In one embodiment, which can be combined with other embodiments, the ESC403 is made from a ceramic material such as alumina (Al2O3), aluminum nitride (AlN), or other suitable material. The ESC403 may be made from a polymer such as polyimide, polyetheretherketone, or polyaryletherketone. The ESC403 includes a chucking electrode 426 disposed therein. The chucking electrode 426 is coupled via an RF filter and an equipment plate 407 to a chucking power supply 434 that supplies DC power to electrostatically fix the substrate 236 to the support surface 430 of the ESC403. The RF filter prevents the RF power used to form a plasma (not shown) in the etching chamber 400 from damaging electrical equipment or causing an electrical hazard outside the chamber.

[0040]

[0044] The ESC 403 includes one or more resistive heaters 428 embedded therein. The resistive heaters 428 are used to raise the temperature of the ESC 403 to a cryogenic processing temperature suitable for processing the substrate 236 placed on the support surface 430. The resistive heaters 428 are coupled to a heater power supply 436 through an equipment plate 407 and an RF filter. The RF filter prevents the RF power used to form plasma (not shown) within the etching chamber 400 from damaging electrical equipment or causing an electrical hazard outside the chamber. The heater power supply 436 can supply power to the resistive heaters 428 of 500 watts or more. A controller 120 is coupled to the heater power supply 436 to control its operation, which is typically set to heat the substrate 236 to a cryogenic etching temperature. In one embodiment, which can be combined with other embodiments, the resistance heater 428 includes a plurality of laterally separated heating zones, and the controller 120 allows at least one zone of the resistance heater 428 to be preferentially heated over resistance heaters 428 located in one or more of the other zones. For example, the resistance heaters 428 may be arranged concentrically in a plurality of separated heating zones. The resistance heaters 428 maintain the substrate 236 at a cryogenic etching temperature suitable for processing.

[0041]

[0045] The substrate support assembly 401 may include one or more probes positioned therein to determine the temperature of the ESC 403 and / or the ESC base assembly 405. In one embodiment, which can be combined with other embodiments described herein, one or more cryogenic optical probe assemblies are coupled to the controller 120. In one embodiment, which can be combined with other embodiments described herein, each cryogenic optical probe assembly corresponds to one zone of a plurality of laterally separated heating zones of a resistive heater 428, and the cryogenic optical probe measures the temperature of each zone of the ESC 403. The controller 120 is coupled to the heater power supply 436 so that each zone of the resistive heater 428 is heated independently, thereby resulting in a substantially uniform lateral temperature profile of the ESC 403 based on temperature measurements, and maintaining a uniform cryogenic etching temperature for the substrate 236 placed on the ESC 403.

[0042]

[0046] Figure 5 is a schematic diagram of a substrate processing method 500 according to one mounting configuration. Step 501 of the method 500 includes transferring the substrate (substrate 236, etc.) into a deposition chamber which may be a substrate processing chamber 200 used as a deposition chamber 101, as described above with respect to Figures 1 and 2.

[0043]

[0047] Step 502 of this method includes depositing one or more amorphous carbon hard mask layers on a substrate in a deposition chamber. The one or more amorphous carbon hard mask layers are deposited on a plurality of base layers formed on the front surface of the substrate. In one embodiment that can be combined with other embodiments, the plurality of base layers include a plurality of alternating oxide layers and a plurality of nitrogen (nitride, etc.) layers. In one embodiment that can be combined with other embodiments, the plurality of base layers include a plurality of alternating oxide layers and a plurality of silicon (polysilicon, etc.) layers. The one or more amorphous carbon hard mask layers and the plurality of base layers are used to form a plurality of film stacks on the front surface of the substrate. The deposited one or more amorphous carbon hard mask layers are sp 2 Matrix or sp 3It has a matrix. 2 The characteristics of the matrix, etc., are sp 3 Compared to processes that require a matrix, this promotes cost reduction and improved modularity of device functionality.

[0044]

[0048] One or more amorphous carbon hard mask layers are deposited during the deposition process in step 502. One or more amorphous carbon hard mask layers are deposited on multiple base layers of the substrate at a deposition temperature in the range of 300°C to 750°C. In one embodiment, which can be combined with other embodiments, the deposition temperature is in the range of 600°C to 700°C.

[0045]

[0049] One or more amorphous carbon hard mask layers are deposited on multiple base layers of a substrate at a deposition pressure of 12 Torr or less, for example, in the range of 0.5 Torr to 12 Torr. One or more amorphous carbon hard mask layers are deposited to a hard mask thickness of 7 microns or less, for example, in the range of 0.1 microns to 7 microns. This disclosure intends that other hard mask thickness values ​​may be used. This disclosure intends that one or more amorphous carbon hard mask layers of a substrate may be used to form a memory device or a logic device. One or more amorphous carbon hard mask layers deposited on multiple base layers include a hard mask composition. The hard mask composition includes carbon and may include one or more dopants such as boron, tungsten, and / or nitrogen.

[0046]

[0050] The deposition of one or more amorphous carbon hard mask layers is performed in the deposition chamber after the substrate has been transferred into the deposition chamber. Depositing one or more amorphous carbon hard mask layers involves flowing one or more reactive precursor gases into the deposition chamber, generating a plasma in the deposition chamber to deposit reactants onto multiple base films, and forming one or more amorphous carbon hard mask layers. The one or more reactive precursor gases include one or more of carbon, hydrogen, and / or nitrogen, such as N2, H2, C2H2, and / or C3H6. Generating the plasma involves flowing one or more inert gases into the deposition chamber while applying power (such as radio frequency power) to generate the plasma. The one or more inert gases include one or more of helium and / or argon. The plasma is an inert-stabilized plasma. The one or more reactive precursor gases flow at a first flow rate ranging from 100 standard cubic centimeters / minute (SCCM) to 2000 SCCM. One or more inert gases flow at a second flow rate ranging from 0 SCCM to 11900 SCCM. The total flow rate is the sum of the first and second flow rates. The total flow rate is in the range of 1000 SCCM to 12000 SCCM.

[0047]

[0051] In step 503, the substrate is transferred from the deposition chamber into the annealing chamber (such as the annealing chamber 300 used as annealing chamber 102). The substrate is transferred into the annealing chamber at ambient temperature, such as room temperature.

[0048]

[0052] Step 504 of Method 500 includes performing a rapid thermal annealing step on the substrate. The rapid thermal annealing step is performed in an annealing chamber. The rapid thermal annealing step lasts for an annealing time. The annealing time is 60 seconds or less, for example, in the range of 2 to 30 seconds. In one embodiment, which can be combined with other embodiments, the annealing time is in the range of 8 to 12 seconds, for example, 10 seconds.

[0049]

[0053] The rapid thermal annealing process includes heating the substrate to an annealing temperature in the range of 600°C to 1000°C and maintaining the annealing temperature for the remainder of the annealing time. In one embodiment, which can be combined with other embodiments, the annealing temperature is in the range of 880°C to 920°C, for example, 900°C. The annealing temperature may be measured on the back surface of the substrate, the front surface of the substrate, the surface of one or more amorphous carbon hard mask layers, and / or the surface of multiple base layers. The substrate is heated using one or more of a plurality of heating lamps, one or more annealing lasers, and / or one or more resistance heater elements embedded in a pedestal on which the substrate is supported. The substrate may be heated from above and / or from below.

[0050]

[0054] The rapid thermal annealing process includes flowing an annealing gas composition into an annealing chamber and exposing the substrate to the annealing gas composition while heating the substrate. The annealing gas composition comprises one or more inert gases. The annealing gas composition comprises one or more of argon, nitrogen, helium, and / or hydrogen. The annealing gas composition flows at an annealing flow rate in the range of 14,000 SCCM to 16,000 SCCM, for example, about 15,000 SCCM. The rapid thermal annealing process is carried out at an annealing pressure. In one embodiment, which can be combined with other embodiments, the annealing pressure is the ambient pressure, such as the chamber pressure (e.g., about 760 Torr). In one embodiment, which can be combined with other embodiments, the annealing pressure is in the range of 250 mTorr to 760 Torr.

[0051]

[0055] After the rapid thermal annealing process, one or more amorphous carbon hard mask layers of the substrate have film stresses altered by the rapid thermal annealing process. In one embodiment that can be combined with other embodiments (for example, when the substrate entering the annealing chamber has a film stress exceeding 100 MPa), the rapid thermal annealing process reduces the film stress of one or more amorphous carbon hard mask layers to 100 MPa or less. In another embodiment that can be combined with other embodiments (for example, when the substrate entering the annealing chamber has a film stress that is compressive), the rapid thermal annealing process changes the film stress of one or more amorphous carbon hard mask layers to a tensile stress. The rapid thermal annealing process reduces the warping of the substrate.

[0052]

[0056] After the rapid thermal annealing process, one or more amorphous carbon hard mask layers of the substrate have a hydrogen content of 14% or less, for example, in the range of 5% to 12%, or in the range of 5% to 10%. The hydrogen content can be determined, for example, using hydrogen forward scattering analysis (HFS). After the rapid thermal annealing process, one or more amorphous carbon hard mask layers of the substrate have a Young's modulus of 40 GPa or more, for example, in the range of 45 GPa to 60 GPa. After the rapid thermal annealing process, one or more amorphous carbon hard mask layers of the substrate have a Young's modulus of 1.75 g / cm³. 3 For example, 1.81 g / cm³ 3 From 1.90 g / cm³ 3 The film density is within the specified range. This film density makes it easier to reduce film loss during the rapid thermal annealing process compared to other annealing processes. After the rapid thermal annealing process, one or more amorphous carbon hard mask layers of the substrate have etching selectivity for multiple base layers during the cryogenic etching process (such as the etching described in relation to process 508). The etching selectivity is 1.0 or higher, for example, in the range of 1.01 to 1.10. This etching selectivity promotes high etching selectivity in the cryogenic etching process.

[0053]

[0057] In step 505, the substrate is transferred from the annealing chamber into the lithography chamber (lithography chamber 123, etc.).

[0054]

[0058] Step 506 of Method 500 includes patterning the substrate. Patterning may include performing a lithography process, such as a photolithography process, on the substrate. The substrate patterning is performed in a lithography chamber. In one embodiment, which can be combined with other embodiments, the substrate is patterned by projecting light onto it using one or more optical emitters (such as optical emitters of a spatial light modulator).

[0055]

[0059] In step 507, the substrate is transferred from the lithography chamber into the etching chamber (such as etching chamber 400, which is used as etching chamber 124).

[0056]

[0060] Step 508 of Method 500 includes etching the substrate. The etching is carried out in an etching chamber. Etching the substrate includes performing an etching process on the substrate at an etching temperature. The etching temperature is a cryogenic etching temperature of 0°C or lower. In one embodiment, which can be combined with other embodiments, the cryogenic etching temperature is -20°C or lower, or -50°C or lower. In one embodiment, which can be combined with other embodiments, the cryogenic etching temperature is in the range of -120°C to 0°C. Etching includes exposing the substrate to an etching gas such as tetraethyl orthosilicate (TEOS).

[0057]

[0061] The rapid thermal annealing step 504 is performed after the deposition of one or more amorphous carbon hard mask layers in step 502 and before the substrate patterning in step 506. The rapid thermal annealing step 504 is performed before the substrate etching in step 508. In one embodiment, which can be combined with other embodiments, the substrate patterning in step 506 is performed before the substrate etching in step 508.

[0058]

[0062] One or more of operations 501-508 can be repeated. In one embodiment that can be combined with other embodiments, operation 502 is performed to deposit a first hard mask thickness of 1.5 microns, and operation 504 is performed to anneal the first hard mask thickness. Operation 502 is repeated to deposit a second hard mask thickness of 1.5 microns, and operation 504 is performed to anneal the second hard mask thickness. By repeating operations 502 and 504, a hard mask having a total hard mask thickness of 3 microns and a neutral film stress such as a tensile film stress and / or a film stress of 100 MPa or less can be easily formed.

[0059]

[0063] Advantages of the present disclosure include changes in the compressive stress of the amorphous carbon hard mask layer (e.g., a decrease in compressive stress, or a change from compressive stress to tensile stress, etc.), an improvement in the etching selectivity of the amorphous carbon hard mask layer when used with an ultra-low temperature etching process, a decrease in the hydrogen content, a shortening of the annealing time, a reduction in the loss of the amorphous carbon hard mask layer, and an improvement in mechanical properties such as Young's modulus. Also, advantages of the present disclosure include a reduction in the warpage of the substrate, a reduction in the need for deposition on the back side surface of the substrate, a reduction in the need for a high deposition temperature, sp 3 a reduction in the need for using sp carbon, a shortening of the process time, an improvement in device performance, a reduction in resource consumption, an improvement in throughput, and a reduction in the loss of the hard mask layer. It is contemplated that one or more aspects disclosed herein can be combined. As an example, one or more aspects, features, components, and / or characteristics of system 100, substrate processing chamber 200 (deposition chamber), annealing chamber 300, etching chamber 400, and / or method 500 can be combined. Further, it is contemplated that one or more aspects disclosed herein can include some or all of the aforementioned advantages.

[0060]

[0064] Aspects described herein involve other operations that involve increasing the deposition temperature (which can reduce the modularity of the use of the deposition chamber), sp 3This method achieves the aforementioned advantages over processes that require the use of a carbon hard mask and processes that involve deposition on the back side of the substrate to account for substrate warping.

[0061]

[0065] The process parameters described herein promote neutral film stress, high Young's modulus, and high etching selectivity in cryogenic etching of amorphous carbon hard mask layers, while simultaneously promoting high film density (facilitating reduction of film loss). Such process parameters include, for example, annealing time, annealing temperature, annealing pressure, annealing gas composition, and annealing flow rate. The process parameters disclosed herein promote unexpected results, as other processes may result in substantially low etching selectivity, substantial film loss, or compression and / or film stress exceeding 100 MPa. For example, when using the annealing temperature and annealing time disclosed herein, one may find the film density (and film loss) to be unexpected. As another example, one may find that the mechanical properties, such as Young's modulus, achieved using the process parameters disclosed herein are unexpected. Unexpected results are thought to be promoted, for example, by the annealing temperature used, the annealing time used, and the hydrogen content after the rapid thermal annealing process.

[0062]

[0066] While the foregoing applies to embodiments of the present disclosure, other and further embodiments of the present disclosure can be devised without departing from its basic scope. The present disclosure is also intended to allow one or more aspects of the embodiments described herein to be replaced by one or more of the other aspects described herein. The scope of the present disclosure is determined by the following claims.

Claims

1. A method for processing a substrate, Depositing one or more amorphous carbon hard mask layers on the substrate, After depositing the one or more amorphous carbon hard mask layers, a rapid thermal annealing process is performed on the substrate, wherein the rapid thermal annealing process lasts for less than 30 seconds, and the rapid thermal annealing process is performed The substrate is heated to an annealing temperature in the range of 600°C to 1000°C. The process includes performing a rapid thermal annealing process on the substrate, After performing the rapid thermal annealing process, the substrate is etched. A method that includes this.

2. The method according to claim 1, wherein etching the substrate includes performing an etching process on the substrate at an etching temperature of 0°C or lower.

3. The one or more amorphous carbon hard mask layers are sp ２ matrix or sp ３ The method according to claim 1, comprising a matrix.

4. The method according to claim 1, wherein the annealing time is in the range of 8 to 12 seconds, the annealing temperature is in the range of 880°C to 920°C, and the rapid heat annealing process is carried out at an annealing pressure in the range of 250 mTorr to 760 Torr.

5. The method according to claim 4, wherein the rapid thermal annealing step further comprises exposing the substrate to an annealing gas composition, the annealing gas composition comprising one or more of argon, nitrogen, helium, and hydrogen.

6. The method according to claim 5, wherein the one or more amorphous carbon hard mask layers are deposited on the substrate at a deposition temperature in the range of 300°C to 750°C and a deposition pressure of 12 Torr or less.

7. The method according to claim 6, further comprising patterning the substrate after performing the rapid thermal annealing step.

8. The method according to claim 1, wherein the one or more amorphous carbon hard mask layers include a hard mask thickness of 7 microns or less.

9. The method according to claim 1, wherein the rapid thermal annealing step changes the film stress of the one or more amorphous carbon hard mask layers to 100 MPa or less.

10. The method according to claim 1, wherein the rapid thermal annealing step changes the film stress of the one or more amorphous carbon hard mask layers into a tensile force.

11. A non-transient computer-readable medium for processing a circuit board, which, when executed, Depositing one or more amorphous carbon hard mask layers on the substrate, After depositing the one or more amorphous carbon hard mask layers, a rapid thermal annealing process is performed on the substrate, wherein the rapid thermal annealing process lasts for less than 30 seconds, and the rapid thermal annealing process is performed The substrate is heated to an annealing temperature in the range of 600°C to 1000°C. The process includes performing a rapid thermal annealing process on the substrate, After performing the rapid thermal annealing process, the substrate is etched. A non-transient, computer-readable medium containing instructions that perform multiple processes, including [specific processes].

12. The non-transient computer-readable medium according to claim 11, wherein etching the substrate includes performing an etching process on the substrate at an etching temperature of 0°C or lower.

13. The one or more amorphous carbon hard mask layers are sp ２ matrix or sp ３ A non-transient computer-readable medium according to claim 11, having a matrix.

14. The non-transient computer-readable medium according to claim 11, wherein the annealing time is in the range of 8 to 12 seconds, and the annealing temperature is in the range of 880°C to 920°C.

15. The non-transient computer-readable medium according to claim 14, wherein the rapid thermal annealing step further comprises exposing the substrate to an annealing gas composition, the annealing gas composition comprising one or more of argon, nitrogen, helium, and hydrogen.

16. The non-transient computer-readable medium according to claim 15, wherein the one or more amorphous carbon hard mask layers are deposited on the substrate at a deposition temperature in the range of 300°C to 750°C and a deposition pressure of 12 Torr or less.

17. The non-transient computer-readable medium according to claim 16, wherein the plurality of steps further include patterning the substrate after the rapid thermal annealing step.

18. The rapid thermal annealing step changes the film stress of the one or more amorphous carbon hard mask layers to 100 MPa or less, as described in claim 11, for a non-transient computer-readable medium.

19. A substrate processing system, Deposition chamber and Annealing chamber and A transfer chamber coupled to the deposition chamber and the annealing chamber, Cryogenic etching chamber and It is a controller, and when executed, The deposition chamber is used to deposit one or more amorphous carbon hard mask layers on the substrate, After the one or more amorphous carbon hard mask layers are deposited on the substrate, the substrate is subjected to a rapid thermal annealing process in the annealing chamber, wherein the rapid thermal annealing process lasts for less than 30 seconds, and the rapid thermal annealing process is performed The substrate is heated to an annealing temperature in the range of 600°C to 1000°C. This includes performing a rapid thermal annealing process on the substrate, After the rapid thermal annealing process is carried out, the substrate is etched in the cryogenic etching chamber. A controller and A system equipped with these features.

20. The system according to claim 19, wherein the deposition chamber, the annealing chamber, and the transfer chamber are mounted on the frame of a cluster tool.

Images