Substrate processing apparatus and substrate processing method

Abstract

To describe a substrate processing apparatus and a substrate processing method, capable of adjusting a liquid amount of a liquid film formed on a front surface of a substrate with high accuracy.SOLUTION: A substrate processing apparatus comprises: a liquid processing part that is configured to supply a processing liquid while rotating a substrate to form a liquid film on a front surface of the substrate; a measurement part that is configured to measure a temperature of the processing liquid supplied to the substrate; a dry processing part that is configured to dry the substrate on which the liquid film is formed; and a control part. The control part is configured to execute a first processing of calculating a prediction liquid amount of the liquid film formed on the front surface of the substrate, a second processing of setting a processing condition of the liquid film formed on the front surface of the substrate to reach the prediction liquid amount calculated in the first processing, and a third processing of forming the liquid film on the front surface of the substrate in the liquid processing part on the basis of the processing condition set in the second processing, on the basis of a liquid film model expressing a relation between the temperature of the processing liquid supplied to the substrate and the liquid amount of the liquid film formed on the front surface of the substrate, and the temperature measured by the measurement part.SELECTED DRAWING: Figure 2

Description

【Technical Field】 【0001】 The present disclosure relates to a substrate processing apparatus and a substrate processing method. 【Background Art】 【0002】 A method for manufacturing a semiconductor device includes, for example, forming a stacked structure of an integrated circuit on the surface of a substrate (e.g., a semiconductor wafer, etc.) by finely processing the substrate. The fine processing of the substrate includes supplying a processing liquid to the substrate to clean and dry the substrate in order to remove minute particles and native oxide films on the surface of the substrate. Patent Document 1 discloses a technique for drying a substrate using a supercritical fluid as an example of the drying process of the substrate. 【Prior Art Documents】 【Patent Documents】 【0003】 【Patent Document 1】 Japanese Patent Application Laid-Open No. 2019-033246 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0004】 The present disclosure describes a substrate processing apparatus and a substrate processing method capable of accurately adjusting the amount of liquid in a liquid film formed on the surface of a substrate. 【Means for Solving the Problems】 【0005】 An example of a substrate processing apparatus includes a liquid processing unit configured to rotate the substrate while supplying a processing liquid to form a liquid film on the substrate surface, a measuring unit configured to measure the temperature of the processing liquid supplied to the substrate, a drying processing unit configured to dry the substrate on which the liquid film has been formed, and a control unit. The control unit is configured to perform a first process of calculating a predicted liquid volume of the liquid film to be formed on the substrate surface based on a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate and the amount of liquid in the liquid film formed on the substrate surface, and the temperature measured by the measuring unit; a second process of setting processing conditions such that the predicted liquid volume calculated in the first process is obtained; and a third process of forming a liquid film on the substrate surface in the liquid processing unit based on the processing conditions set in the second process. [Effects of the Invention] 【0006】 According to the substrate processing apparatus and substrate processing method described herein, it becomes possible to precisely control the amount of liquid in the liquid film formed on the surface of the substrate. [Brief explanation of the drawing] 【0007】 [Figure 1] Figure 1 is a schematic plan view showing an example of a substrate processing system. [Figure 2] Figure 2 is a schematic side view showing the inside of the substrate processing system shown in Figure 1. [Figure 3] Figure 3 is a schematic side view showing an example of a liquid processing unit. [Figure 4] Figure 4 is a schematic perspective view showing an example of a drying unit. [Figure 5] Figure 5 is a block diagram showing an example of the main components of a substrate processing system. [Figure 6] Figure 6 is a schematic diagram showing an example of the controller's hardware configuration. [Figure 7] Figure 7 is a flowchart illustrating the procedure for generating the model. [Figure 8]Figure 8 is a graph showing an example of the time variation of the substrate rotation speed and the supply flow rate of the processing liquid when forming a liquid film on the surface of the substrate. [Figure 9] Figure 9(a) is a graph showing an example of a liquid film model, and Figure 10(b) is a graph showing an example of a treatment condition model. [Figure 10] Figure 10 is a flowchart illustrating the substrate processing procedure. [Modes for carrying out the invention] 【0008】 In the following descriptions, the same reference numeral will be used for identical elements or elements with the same function, and redundant explanations will be omitted. Furthermore, in this specification, when referring to the top, bottom, right, and left of a figure, the direction of the reference numeral in the figure will be used as the reference. 【0009】 [Circuit board processing system] First, a substrate processing system 1 (substrate processing apparatus) configured to process a substrate W will be described with reference to Figures 1 and 2. The substrate processing system 1 comprises an input / output station 2, a processing station 3, and a controller Ctr (control unit). The input / output station 2 and the processing station 3 may be arranged in a single line horizontally, for example. 【0010】 The substrate W may be disc-shaped, or it may be a plate shape other than circular, such as a polygon. The substrate W may have a notch in which a part is cut out. The notch may be, for example, a notch (groove such as U-shaped or V-shaped), or a straight section extending in a straight line (a so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other types of substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm. 【0011】 The loading / unloading station 2 includes a mounting section 4, a loading / unloading section 5, and a shelf unit 6. The mounting section 4 includes a plurality of mounting platforms (not shown) arranged in the width direction (vertical direction in Figure 1). Each mounting platform is configured to accommodate a carrier 7 (container). The carrier 7 is configured to contain at least one substrate W in a sealed state. The carrier 7 includes an opening / closing door (not shown) for loading and unloading the substrate W. 【0012】 The loading / unloading section 5 is located adjacent to the loading / unloading section 4 in the direction in which the loading / unloading station 2 and processing station 3 are aligned (left-right direction in Figure 1). The loading / unloading section 5 includes an opening / closing door (not shown) provided for the loading / unloading section 4. When the carrier 7 is placed on the loading / unloading section 4, both the opening / closing door of the carrier 7 and the opening / closing door of the loading / unloading section 5 are opened, creating communication between the inside of the loading / unloading section 5 and the inside of the carrier 7. 【0013】 The loading / unloading unit 5 incorporates a transport arm A1 and a shelf unit 6. The transport arm A1 is configured to move horizontally in the width direction (up and down direction in Figure 1) of the loading / unloading unit 5, vertically in the vertical direction, and to rotate around the vertical axis. The transport arm A1 is configured to take the substrate W from the carrier 7 and pass it to the shelf unit 6, and to receive the substrate W from the shelf unit 6 and return it to the carrier 7. The shelf unit 6 is located near the processing station 3 and is configured to mediate the transfer of substrate W between the loading / unloading unit 5 and the processing station 3. 【0014】 The processing station 3 includes a transfer unit 8 and a plurality of substrate processing units U (substrate processing apparatuses). The transfer unit 8 extends horizontally, for example, in the direction in which the loading / unloading station 2 and the processing station 3 are arranged side by side (the left-right direction in FIG. 1). The transfer unit 8 incorporates a transfer arm A2. The transfer arm A2 is configured to be capable of horizontal movement in the longitudinal direction of the transfer unit 8 (the left-right direction in FIG. 1), vertical movement in the vertical direction, and rotational movement around the vertical axis. The transfer arm A2 is configured to take out the substrate W from the shelf unit 6 and deliver it to the substrate processing unit U, and also to receive the substrate W from the substrate processing unit U and return it into the shelf unit 6. 【0015】 In the example shown in FIGS. 1 and 2, the plurality of substrate processing units U include a plurality (for example, three) of substrate processing units U arranged vertically on one side of the transfer unit 8 and a plurality (for example, three) of substrate processing units U arranged vertically on the other side of the transfer unit 8. The substrate processing unit U includes a liquid processing unit U1 and a drying processing unit U2. In the example shown in FIGS. 1 and 2, the liquid processing unit U1 and the drying processing unit U2 are arranged adjacent to each other along the longitudinal direction of the transfer unit 8 (the left-right direction in FIG. 1). 【0016】 [Liquid processing unit] Subsequently, referring to FIGS. 1 to 3, the liquid processing unit U1 will be described in detail. As illustrated in FIGS. 1 and 2, the liquid processing unit U1 includes a metering unit U11, a liquid processing unit U12, and a measuring unit U13. 【0017】 The metering unit U11 is configured to measure the weight of the substrate W carried into the liquid processing unit U1. The metering unit U11 is configured to transmit the measured weight data to the controller Ctr. 【0018】 The liquid processing unit U12 is configured to perform a predetermined liquid treatment on the substrate W. This predetermined liquid treatment includes, for example, a cleaning treatment of the substrate W and a treatment to form a liquid film R (see Figure 3) on the surface Wa (see Figure 3) of the substrate W. The liquid processing unit U12 may be, for example, a single-wafer cleaning device that cleans the substrate W one by one by spin cleaning. As illustrated in Figure 3, the liquid processing unit U12 includes a rotating holding unit 10, a cleaning liquid supply unit 20, a rinsing liquid supply unit 30, and a processing liquid supply unit 40. 【0019】 The rotating and holding unit 10 includes a rotating unit 11, a shaft 12, and a holding unit 13. The rotating unit 11 is configured to operate based on an operation signal from the controller Ctr and to rotate the shaft 12. The rotating unit 11 may be a power source such as an electric motor. 【0020】 The holding portion 13 is provided at the tip of the shaft 12. The holding portion 13 is configured to hold the back surface of the substrate W by suction, for example. That is, the rotating holding portion 10 may be configured to rotate the substrate W around a central axis (rotation axis) perpendicular to the surface Wa of the substrate W, while the substrate W is in a substantially horizontal position. As illustrated in Figure 3, the rotating holding portion 10 may rotate the substrate W clockwise when viewed from above. 【0021】 The cleaning solution supply unit 20 is configured to supply cleaning solution L1 to the substrate W. The cleaning solution L1 may be, for example, a chemical solution for removing a thin film (e.g., a native oxide film such as a silicon oxide film) from the surface Wa of the substrate W, or a chemical solution for removing foreign matter (e.g., particles, organic matter, etc.) adhering to the surface Wa of the substrate W. The chemical solution may contain acidic or alkaline chemical solutions. Acidic chemical solutions may include, for example, SC-2 solution (a mixture of hydrochloric acid, hydrogen peroxide, and pure water), SPM (a mixture of sulfuric acid and hydrogen peroxide solution), HF solution (hydrofluoric acid), DHF solution (dilute hydrofluoric acid), HNO3+HF solution (a mixture of nitric acid and hydrofluoric acid), etc. Alkaline chemical solutions may include, for example, SC-1 solution (a mixture of ammonia, hydrogen peroxide, and pure water), hydrogen peroxide solution, etc. The temperature of the cleaning solution L1 can be set to various values ​​depending on the cleaning conditions of the substrate W, but for example, it may be around 20°C to 160°C. 【0022】 The cleaning fluid supply unit 20 includes a liquid source 21, a pump 22, a valve 23, a nozzle 24, piping 25, and a drive source 26. The liquid source 21 is the source of the cleaning fluid L1. As illustrated in Figures 1 and 2, the liquid source 21 may be located within the loading / unloading unit 5. Returning to Figure 3, the pump 22 operates based on an operating signal from the controller Ctr and is configured to deliver the cleaning fluid L1 drawn from the liquid source 21 to the nozzle 24 via the piping 25 and valve 23. 【0023】 Valve 23 operates based on an operating signal from controller Ctr and is configured to transition between an open state that allows fluid flow in piping 25 and a closed state that prevents fluid flow in piping 25. Nozzle 24 is positioned above substrate W such that its discharge port faces the surface Wa of substrate W. Nozzle 24 is configured to discharge cleaning fluid L1, which is sent from pump 22, from its discharge port. 【0024】 The piping 25 connects the liquid source 21, pump 22, valve 23, and nozzle 24 in order from the upstream side. As illustrated in Figures 1 and 2, the piping 25 may extend while branching along the way to connect the liquid source 21 in the loading / unloading section 5 to the respective nozzles 24 in the liquid processing section U12 of the multiple liquid processing units U1. 【0025】 Returning to Figure 3, the drive source 26 is connected directly or indirectly to the nozzle 24. The drive source 26 operates based on an operating signal from the controller Ctr and is configured to move the nozzle 24 horizontally or vertically above the substrate W. 【0026】 The rinse liquid supply unit 30 is configured to supply rinse liquid L2 to the substrate W. The rinse liquid L2 may be, for example, a liquid for removing (washing away) the cleaning liquid L1 supplied to the surface Wa of the substrate W and the dissolving components of the film by the cleaning liquid L1 from the surface Wa. The rinse liquid L2 may contain, for example, pure water (DIW), ozonated water, carbonated water (CO2 water), ammonia water, etc. 【0027】 The rinse fluid supply unit 30 includes a liquid source 31, a pump 32, a valve 33, a nozzle 34, piping 35, and a drive source 36. The liquid source 31 is the source of the rinse fluid L2. Although not shown in the figures, the liquid source 31 may be located within the loading / unloading unit 5. The pump 32 operates based on an operating signal from the controller Ctr and is configured to send the rinse fluid L2 drawn from the liquid source 31 to the nozzle 34 via the piping 35 and valve 33. 【0028】 Valve 33 operates based on an operating signal from controller Ctr and is configured to transition between an open state that allows fluid flow in piping 35 and a closed state that prevents fluid flow in piping 35. Nozzle 34 is positioned above substrate W such that its discharge port faces the surface Wa of substrate W. Nozzle 34 is configured to discharge rinse liquid L2, which is sent from pump 32, from its discharge port. 【0029】 The piping 35 connects the liquid source 31, pump 32, valve 33, and nozzle 34 in order from the upstream side. Although not shown in the diagram, the piping 35 may extend while branching along the way to connect the liquid source 31 in the loading / unloading section 5 to the respective nozzles 34 in the liquid processing section U12 of the multiple liquid processing units U1. 【0030】 The drive source 36 is connected directly or indirectly to the nozzle 34. The drive source 36 operates based on an operating signal from the controller Ctr and is configured to move the nozzle 34 horizontally or vertically above the substrate W. 【0031】 The processing liquid supply unit 40 is configured to supply processing liquid L3 to the substrate W. Processing liquid L3 is, for example, a liquid for removing (washing away) the rinse liquid L2 supplied to the surface Wa of the substrate W from the surface Wa. When the rinse liquid L2 is replaced by processing liquid L3, a liquid film R of processing liquid L3 is formed on the surface Wa of the substrate W. Processing liquid L3 may contain, for example, IPA (isopropyl alcohol). 【0032】 The processing liquid supply unit 40 includes a liquid source 41, a pump 42, a valve 43, a nozzle 44 (discharge nozzle), piping 45 (supply line), and a drive source 36. The liquid source 41 is the source of the processing liquid L3. As illustrated in Figures 1 and 2, the liquid source 41 may be located within the loading / unloading unit 5. Returning to Figure 3, the pump 42 operates based on an operating signal from the controller Ctr and is configured to deliver the processing liquid L3 drawn from the liquid source 41 to the nozzle 44 via the piping 45 and valve 43. 【0033】 Valve 43 operates based on an operating signal from controller Ctr and is configured to transition between an open state that allows fluid flow in piping 45 and a closed state that prevents fluid flow in piping 45. Nozzle 44 is positioned above substrate W such that its discharge port faces the surface Wa of substrate W. Nozzle 44 is configured to discharge the processing liquid L3 sent from pump 42 through its discharge port. 【0034】 The piping 45 connects the liquid source 41, pump 42, valve 43, and nozzle 44 in order from the upstream side. As illustrated in Figures 1 and 2, the piping 45 may extend starting from the liquid source 41 in the loading / unloading section 5, branching to pass through the liquid processing sections U12 of multiple liquid processing units U1, and then rejoining before returning to the liquid source 41. In other words, the processed liquid L3 may flow in a circulating manner through the piping 45. 【0035】 As illustrated in Figure 2, within each liquid processing unit U12, the piping 45 may include an intermediate section 45a located near the piping 25 and a tip section 45b that branches off from the intermediate section 45a and is connected to the nozzle 44. That is, with reference to the flow direction of the processing liquid L3, the intermediate section 45a is located upstream of the tip section 45b. The processing liquid L3 flowing through the intermediate section 45a may be heated by the influence of the heat of the cleaning liquid L1 flowing through the nearby piping 25. 【0036】 Returning to Figure 3, the drive source 46 is connected directly or indirectly to the nozzle 44. The drive source 46 operates based on an operating signal from the controller Ctr and is configured to move the nozzle 44 horizontally or vertically above the substrate W. 【0037】 The measuring unit U13 is configured to measure the temperature of the processing liquid L3 flowing through the pipe 45. The measuring unit U13 may be configured to measure the temperature of the processing liquid L3 flowing through the tip portion 45b, as illustrated in Figure 2, or it may be configured to measure the temperature of the processing liquid L3 flowing through the portion of the pipe 45 other than the tip portion 45b. The measuring unit U13 is configured to transmit the measured temperature data to the controller Ctr. 【0038】 [Drying Unit U2] Next, the drying unit U2 will be described in detail with reference to Figures 1, 2, and 4. As illustrated in Figures 1 and 2, the drying unit U2 includes a weighing unit U21 and a drying processing unit U22. 【0039】 The weighing unit U21 is configured to measure the weight of the substrate W that has been loaded into the drying unit U2. The weighing unit U21 is configured to transmit the measured weight data to the controller Ctr. 【0040】 The drying section U22 is configured to perform supercritical treatment on a substrate W on which a liquid film R has been formed on its surface Wa. Supercritical treatment is a process of drying a substrate W by bringing a supercritical treatment fluid (supercritical fluid) into contact with the substrate W on which a liquid film R has been formed on its surface Wa. As illustrated in Figure 4, the drying section U22 includes a main body 51, a holding plate 52, and a lid member 53. 【0041】 The main body 51 is a container configured to house the substrate W inside. An opening 51a is formed on the front of the main body 51 for the substrate W to enter and exit. Supply ports 54, 55 and an discharge port 56 are provided on the wall of the main body 51. 【0042】 Supply ports 54 and 55 are each connected to a supply source (not shown) of a processing fluid (e.g., carbon dioxide) via supply piping. Supply port 54 is connected to a supply header 57 mounted on the rear of the main body 51. Supply port 55 is connected to a supply header 58 mounted on the bottom of the main body 51. Each of the supply headers 57 and 58 includes a plurality of supply ports arranged in a line in a predetermined direction, and is configured to supply supercritical fluid into the main body 51 from these supply ports. 【0043】 The discharge port 56 is connected to a discharge pipe extending outside the main body 51. The discharge port 56 is connected to a discharge header 59 attached near the opening 51a of the main body 51. The discharge header 59 includes a plurality of discharge ports arranged in a line in a predetermined direction, and is configured to discharge the supercritical fluid to the outside of the main body 51 from these ports. The supercritical fluid discharged from the discharge header 59 to the outside of the main body 51 may include the processing liquid L3 dissolved in the supercritical fluid from the surface of the substrate W. 【0044】 The retaining plate 52 is configured to hold the substrate W to be processed horizontally. The lid member 53 is attached to the retaining plate 52 and is configured to seal the opening 51a when the retaining plate 52 is inserted into the main body 51 through the opening 51a. 【0045】 [Controller Details] The controller Ctr is configured to partially or entirely control the board processing system 1. As illustrated in Figure 5, the controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely a convenient division of the controller Ctr's functions into multiple modules, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being implemented by program execution, but may also be implemented by a dedicated electrical circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates these. 【0046】 The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM stores a program for operating each part of the substrate processing system 1. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. In the following, each part of the substrate processing system 1 may include the liquid processing unit U12 and the drying processing unit U22. 【0047】 The storage unit M2 is configured to store various types of data. For example, the storage unit M2 may store programs read from the recording medium RM by the reading unit M1, setting data input from the operator via an external input device (not shown), etc. The storage unit M2 may also store weight data acquired by the weighing units U11 and U21, temperature data acquired by the measurement unit U13, etc. The storage unit M2 may also store, for example, processing conditions for processing the substrate W, a liquid film model D1 for estimating the predicted liquid volume of the liquid film R formed on the surface Wa of the substrate W, and a processing condition model D2 for estimating the processing conditions of the substrate W. Details of the liquid film model D1 and the processing condition model D2 will be described later. 【0048】 The processing unit M3 is configured to process various types of data. For example, the processing unit M3 may generate signals to operate various parts of the substrate processing system 1 based on the various types of data stored in the storage unit M2. 【0049】 The instruction unit M4 is configured to transmit the operation signals generated in the processing unit M3 to each part of the substrate processing system 1. 【0050】 The hardware of the controller Ctr may consist of, for example, one or more control computers. The controller Ctr may include a circuit C1 as a hardware configuration, as illustrated in Figure 6. The circuit C1 may consist of electrical circuit elements. The circuit C1 may include, for example, a processor C2, memory C3, storage C4, a driver C5, and input / output ports C6. 【0051】 The processor C2 may be configured to implement each of the above-described functional modules by executing a program in cooperation with at least one of the memory C3 and storage C4 and performing signal input and output via the input / output port C6. The memory C3 and storage C4 may function as a storage unit M2. The driver C5 may be a circuit configured to drive each part of the board processing system 1. The input / output port C6 may be configured to mediate signal input and output between the driver C5 and each part of the board processing system 1. 【0052】 The board processing system 1 may have one controller Ctr, or it may have a controller group (control unit) composed of multiple controllers Ctr. If the board processing system 1 has a controller group, each of the above functional modules may be realized by one controller Ctr, or by a combination of two or more controllers Ctr. If the controller Ctr is composed of multiple computers (circuit C1), each of the above functional modules may be realized by one computer (circuit C1), or by a combination of two or more computers (circuit C1). The controller Ctr may have multiple processors C2. In this case, each of the above functional modules may be realized by one processor C2, or by a combination of two or more processors C2. 【0053】 [Model generation method] Next, the method for generating the liquid film model D1 will be explained with reference to Figures 7 and 8. First, the test substrate is transported to the liquid processing unit U1 (see step S1 in Figure 7). Next, the test substrate is placed on the weighing unit U11 and its weight is measured (see step S2 in Figure 7). The measured weight data is transmitted to the controller Ctr. 【0054】 Next, the test substrate is held in the rotating holding unit 10 of the liquid processing unit U12. Then, the controller Ctr controls the rotating holding unit 10 to rotate the back surface of the test substrate while holding it with the holding unit 13. In this state, the controller Ctr controls the cleaning liquid supply unit 20 to supply cleaning liquid L1 to the surface of the test substrate from the nozzle 24 (see step S3 in Figure 7). 【0055】 The cleaning solution L1 supplied to the surface of the test substrate flows across the entire surface from the center to the outer edge as the test substrate rotates, and then is swept outwards from the outer edge. As a result, a liquid film of the cleaning solution L1 is formed on the surface of the test substrate as long as the supply of the cleaning solution L1 from the nozzle 24 continues. This cleans the test substrate with the cleaning solution L1. 【0056】 Next, the controller Ctr controls the rotation and holding unit 10 to rotate the back surface of the test substrate while holding it with the holding unit 13. In this state, the controller Ctr controls the rinse liquid supply unit 30 to supply rinse liquid L2 to the surface of the test substrate from the nozzle 34 (see step S4 in Figure 7). 【0057】 The rinse liquid L2 supplied to the surface of the test board flows across the entire surface, replacing the cleaning liquid L1 from the center to the outer edge as the test board rotates, and is then swept outwards from the outer edge of the test board. As a result, a liquid film of rinse liquid L2 is formed on the surface of the test board as the cleaning liquid L1 is discharged from the surface of the test board and the supply of rinse liquid L2 from the nozzle 34 continues. 【0058】 Next, the temperature of the processing solution L3 supplied to the surface of the test substrate is measured by the measurement unit U13 (see step S5 in Figure 7). The measured temperature data is transmitted to the controller Ctr. 【0059】 Next, the controller Ctr controls the rotation and holding unit 10 to rotate the back surface of the test substrate while holding it with the holding unit 13. In this state, the controller Ctr controls the processing liquid supply unit 40 to supply the processing liquid L3 to the surface of the test substrate from the nozzle 44 (see step S6 in Figure 7). 【0060】 The processing liquid L3 supplied to the surface of the test board flows across the entire surface, replacing the rinsing liquid L2 from the center to the outer edge as the test board rotates, and is then swept outwards from the outer edge of the test board (see processing period T1 in Figure 8). At the moment when the rinsing liquid L2 on the surface of the test board is replaced by the processing liquid L3, the controller Ctr controls the processing liquid supply unit 40 to gradually stop the supply of processing liquid L3 (see processing period T2 in Figure 8). Subsequently, the controller Ctr controls the rotation holding unit 10 to increase the rotation speed of the test board (see processing period T3 in Figure 8), and stops the rotation of the test board after a predetermined time has elapsed. As a result, the excess processing liquid L3 on the test board is swept away from the test board, and a liquid film R of a predetermined amount is formed on the surface of the test board. 【0061】 During processing period T3, the rotation speed of the substrate may be set to, for example, approximately 10 rpm to 300 rpm. During processing period T3, the rotational acceleration of the substrate may be, for example, 200 rpm. 2 ~1500 rpm 2 It may be set to a certain extent. During processing period T3, the rotation time of the substrate may be set to, for example, 0.1 sec to 5 sec. 【0062】 Next, the test substrate with the liquid film R formed on its surface is placed on the weighing unit U11, and the weight of the test substrate and the liquid film R is measured (see step S7 in Figure 7). The measured weight data is transmitted to the controller Ctr. The controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S2 from the weight data measured in step S7. Furthermore, the controller Ctr calculates the liquid volume of the liquid film R, i.e., the volume of the liquid film R, by dividing this weight by the density of the processing liquid L3 (see step S8 in Figure 7). In this way, the temperature of the processing liquid L3 measured in step S5 and the liquid volume of the liquid film R formed on the surface of the test substrate are associated and stored in the controller Ctr. 【0063】 Then, without changing the rotation speed, rotational acceleration, and rotation time of the test board during processing period T3 (hereinafter, these parameters may be collectively referred to as "processing conditions"), the process of forming a liquid film R on the surface of multiple test boards while changing the temperature of the processing solution L3, and obtaining the amount of liquid in the liquid film R, is repeated. This yields multiple data showing the correspondence between the temperature of the processing solution L3 and the amount of liquid in the liquid film R (see Figure 9(a)). Based on these multiple data, an approximate straight line is calculated, for example, by the least squares method, to obtain a liquid film model D1 that correlates the temperature of the processing solution L3 with the amount of liquid in the liquid film R (see step S9 in Figure 7). Note that in order to obtain the liquid film model D1, it is sufficient that the type of processing solution L3 and the processing conditions during processing period T3 are set to be the same among the multiple test boards. 【0064】 Next, the method for generating the processing condition model D2 will be explained. The method for generating the processing condition model D2 is almost the same as the method for generating the liquid film model D1. However, the difference is that the rotational acceleration and rotation time of the test substrate during the processing period T3 are kept constant, while the rotational speed of the test substrate during the processing period T3 is changed, and the process of forming a liquid film R on the surface of multiple test substrates and obtaining the amount of liquid in the liquid film R is repeated. As a result, multiple data points showing the correspondence between the rotational speed of the substrate during the processing period T3 and the amount of liquid in the liquid film R are obtained (see Figure 9(b)). Based on these multiple data points, an approximate straight line can be calculated, for example, by the least squares method, to obtain a processing condition model D2 in which the rotational speed of the substrate during the processing period T3 is associated with the amount of liquid in the liquid film R. Alternatively, instead of the rotational speed of the substrate during the processing period T3, a processing condition model D2 in which the rotational acceleration of the substrate during the processing period T3 is associated with the amount of liquid in the liquid film R may be generated. Alternatively, instead of the rotation speed of the substrate during processing period T3, a processing condition model D2 may be generated in which the rotation time of the substrate during processing period T3 is associated with the volume of the liquid film R. Or, a processing condition model D2 may be generated in which at least one of the rotation speed, rotational acceleration, and rotational time of the substrate during processing period T3 is associated with the volume of the liquid film R. 【0065】 [Substrate Processing Method] Next, the processing method for the substrate W will be explained with reference to Figure 10. First, the controller Ctr controls the transport arms A1 and A2 to transport the substrate W from the carrier 7 to the liquid processing unit U1 (see step S11 in Figure 10). Next, the substrate W is placed on the weighing unit U11 and its weight is measured (see step S12 in Figure 10). The measured weight data is transmitted to the controller Ctr. 【0066】 Next, the substrate W is held in the rotating holding unit 10 of the liquid processing unit U12. Then, the controller Ctr controls the rotating holding unit 10 to rotate the substrate W while holding the back surface of the substrate W with the holding unit 13. In this state, the controller Ctr controls the cleaning liquid supply unit 20 to supply cleaning liquid L1 from the nozzle 24 to the surface Wa of the substrate W (see step S13 in Figure 10). 【0067】 The cleaning liquid L1 supplied to the surface Wa of the substrate W flows across the entire surface Wa from the center to the outer edge of the substrate W as the substrate W rotates, and then is swept outwards from the outer edge. As a result, a liquid film of the cleaning liquid L1 is formed on the surface Wa of the substrate W as long as the supply of the cleaning liquid L1 from the nozzle 24 continues. This cleans the substrate W with the cleaning liquid L1. 【0068】 Next, the controller Ctr controls the rotation and holding unit 10 to rotate the substrate W while holding the back surface with the holding unit 13. In this state, the controller Ctr controls the rinse liquid supply unit 30 to supply rinse liquid L2 from the nozzle 34 to the surface Wa of the substrate W (see step S14 in Figure 10). 【0069】 The rinse liquid L2 supplied to the surface Wa of the substrate W flows across the entire surface Wa, replacing the cleaning liquid L1 from the center to the outer edge of the substrate W as the substrate W rotates, and is then swept outwards from the outer edge of the substrate W. As a result, while the cleaning liquid L1 is discharged from the surface Wa of the substrate W and the supply of rinse liquid L2 from the nozzle 34 continues, a liquid film of rinse liquid L2 is formed on the surface Wa of the substrate W. 【0070】 Next, the temperature of the processing liquid L3 supplied to the surface of the test substrate is measured by the measurement unit U13 (see step S15 in Figure 10). The measured temperature data is transmitted to the controller Ctr. Based on the received temperature data and the liquid film model D1 stored in the memory unit M2, the controller Ctr calculates the predicted liquid volume of the liquid film R corresponding to that temperature. The controller Ctr also calculates the processing conditions (for example, the number of substrate rotations during the processing period T3) that yield the predicted liquid volume based on the calculated predicted liquid volume and the processing condition model D2 stored in the memory unit M2 (see step S16 in Figure 10). 【0071】 Next, the controller Ctr controls the rotation and holding unit 10 to rotate the substrate W while holding the back surface of the substrate W with the holding unit 13. In this state, the controller Ctr controls the processing liquid supply unit 40 to supply the processing liquid L3 from the nozzle 44 to the surface Wa of the substrate W (see step S17 in Figure 10). 【0072】 The processing liquid L3 supplied to the surface Wa of the substrate W flows across the entire surface of the substrate W, replacing the rinsing liquid L2 from the center to the outer edge as the substrate W rotates, and is then swept outwards from the outer edge of the substrate W (see processing period T1 in Figure 8). At the moment when the rinsing liquid L2 on the surface Wa of the substrate W is replaced by the processing liquid L3, the controller Ctr controls the processing liquid supply unit 40 to gradually stop the supply of the processing liquid L3 (see processing period T2 in Figure 8). Subsequently, the controller Ctr controls the rotation holding unit 10 to increase the rotation speed of the substrate W based on the processing conditions calculated in step S16 (see processing period T3 in Figure 8), and stops the rotation of the substrate W after a predetermined time has elapsed. As a result, a liquid film R of a predetermined amount is formed on the surface Wa of the substrate W. 【0073】 Next, the substrate W on which a liquid film R has been formed is placed on the weighing unit U11, and the weights of the substrate W and the liquid film R are measured (see step S18 in Figure 10). The measured weight data is transmitted to the controller Ctr. Next, the controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S12 from the weight data measured in step S18. Furthermore, the controller Ctr calculates the volume of the liquid film R by dividing this weight by the density of the processing liquid L3 (see step S18 in Figure 10). 【0074】 The liquid volume of the liquid film R calculated in step S18 (hereinafter referred to as the measured liquid volume 1) should be approximately equal to the predicted liquid volume calculated in step S16. However, due to the influence of various factors such as malfunctions in the liquid processing unit U1, the measured liquid volume 1 may deviate from the predicted liquid volume. Therefore, the controller Ctr determines whether the measured liquid volume 1 is within a predetermined target range H1 (see step S19 in Figure 10). The target range H1 may be set, for example, to a range of ±5% or less of the predicted liquid volume, based on the predicted liquid volume. 【0075】 If the controller Ctr determines in step S19 that the result is NO, the substrate W has not been dried and can be reused, so the process proceeds to step S20, where the processing conditions are corrected, and the same substrate W is processed again using the processes from step S11 onwards. If the measured liquid volume 1 is determined to be greater than the target range H1 in step S19, in step S20, for example, the processing conditions may be corrected to increase the rotation speed of the substrate during processing period T3, increase the rotational acceleration of the substrate during processing period T3, or lengthen the rotation time of the substrate during processing period T3. On the other hand, if the measured liquid volume 1 is determined to be less than the target range H1 in step S19, in step S20, for example, the processing conditions may be corrected to decrease the rotation speed of the substrate during processing period T3, decrease the rotational acceleration of the substrate during processing period T3, or shorten the rotation time of the substrate during processing period T3. Furthermore, in step S19, if the measured liquid volume 1 is determined to be significantly larger than the target range H1, or significantly smaller than the target range H1, it may be assumed that an unexpected malfunction has occurred, and the processing of the substrate W may be stopped. 【0076】 If the controller Ctr determines that the answer is YES in step S19, the controller Ctr controls the transport arm A2 to transport the substrate W from the liquid treatment unit U1 to the drying treatment unit U2 (see step S21 in Figure 10). Next, the substrate W is placed on the weighing unit U21 and its weight is measured (see step S22 in Figure 10). The measured weight data is transmitted to the controller Ctr. Next, the controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S12 from the weight data measured in step S22. Furthermore, the controller Ctr calculates the volume of the liquid film R by dividing this weight by the density of the treatment liquid L3 (see step S22 in Figure 10). 【0077】 The liquid volume of the liquid film R calculated in step S22 (hereinafter referred to as the measured liquid volume 2) should be approximately equal to the measured liquid volume 1 and the predicted liquid volume calculated in step S16. However, due to various factors such as liquid spilling from the substrate W during the process of transporting the substrate W to the drying unit U2, the measured liquid volume 2 may deviate from the predicted liquid volume. Therefore, the controller Ctr determines whether the measured liquid volume 2 is within a predetermined target range H2 (see step S23 in Figure 10). The target range H2 may be set, for example, to a range of ±5% or less of the predicted liquid volume, based on the predicted liquid volume. The target range H2 may also be the same as the target range H1. 【0078】 If the controller Ctr determines NO in step S23, there is a concern that the processing solution L3 has spilled, so the process proceeds to step S24 and the processing of substrate W is stopped. Since substrate W cannot be processed again, it is discarded. 【0079】 If the controller Ctr determines that the answer is YES in step S23, the holding plate 52 holds the substrate W, and the substrate W is inserted into the main body 51 of the drying unit U22 together with the holding plate 52. When supercritical fluid at high pressure (for example, about 16 MPa) is supplied to the substrate W in the drying unit U22, the liquid film R filling the spaces between the patterns formed on the substrate W gradually dissolves into the supercritical fluid upon contact with it, and is gradually replaced by the supercritical fluid. Finally, the spaces between the patterns are filled only with supercritical fluid. 【0080】 After the liquid film R is removed from between the patterns by substitution with supercritical fluid, the pressure inside the main body 51 is reduced from a high-pressure state to atmospheric pressure. This causes the supercritical fluid to change into a gaseous state, and the spaces between the patterns are filled only with gas. In this way, the liquid film R is removed from the surface Wa of the substrate W, and the drying process of the substrate W is completed (see step S25 in Figure 10). 【0081】 Next, the substrate W is placed on the weighing unit U21 and its weight is measured (see step S26 in Figure 10). The measured weight data is transmitted to the controller Ctr. Next, the controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S26 from the weight data measured in step S22. Furthermore, the controller Ctr calculates the volume of the liquid film R by dividing this weight by the density of the processing liquid L3 (see step S26 in Figure 10). 【0082】 The liquid volume of the liquid film R calculated in step S26 (hereinafter referred to as the measured liquid volume 3) should be approximately equal to the measured liquid volumes 1 and 2, and the predicted liquid volume calculated in step S16. However, due to the influence of various factors such as malfunctions in the drying unit U2, the measured liquid volume 3 may deviate from the predicted liquid volume. Therefore, the controller Ctr determines whether the measured liquid volume 3 is within a predetermined target range H3 (see step S27 in Figure 10). The target range H3 may be set, for example, to a range of ±5% or less of the predicted liquid volume, based on the predicted liquid volume. The target range H3 may also be the same as the target range H1. 【0083】 If the controller Ctr determines in step S27 that the result is NO, there is a concern that the liquid film R has not dried properly, and the process proceeds to step S24 to stop processing the substrate W. The substrate W cannot be processed again and is therefore discarded. 【0084】 If the controller Ctr determines that the answer is YES in step S27, the controller Ctr determines whether the measured liquid volume 3 is within a predetermined target range H4 (see step S28 in Figure 10). The target range H4 is a narrower range than the target range H3, and may be set to a range of ±3% or less of the predicted liquid volume, for example, based on the predicted liquid volume. 【0085】 If the controller Ctr determines in step S28 that the result is NO, it means that although the measured liquid volume 3 is within the target range H3, and therefore the substrate processing is generally appropriate, it is slightly deviating from the predicted liquid volume, which is the reference value. Therefore, the process proceeds to step S20 to correct the processing conditions, and then steps S11 and below are performed on the subsequent substrate W. 【0086】 If the controller Ctr determines that the answer is YES in step S28, the controller Ctr controls the transport arms A1 and A2 to transport the substrate W to the carrier 7 (see step S29 in Figure 10). This completes the processing of the substrate W. 【0087】 [Effect] As shown in the above example, a liquid film model D1 representing the relationship between the temperature of the processing liquid L3 supplied to the substrate W and the amount of liquid film R formed on the surface Wa of the substrate W is prepared in advance. The processing conditions for the substrate W are set so that the temperature of the processing liquid L3 measured during actual substrate processing matches the predicted liquid volume calculated based on the liquid film model D1. Therefore, an appropriate amount of liquid film R is formed on the surface Wa of the substrate W according to the temperature of the processing liquid L3 supplied to the substrate W during actual substrate processing. Thus, it becomes possible to accurately adjust the amount of liquid film R formed on the surface Wa of the substrate W. 【0088】 As shown in the above example, the amount of liquid film R formed on the surface Wa of the substrate W is adjusted by rotating the substrate W to remove any excess processing liquid L3 from the substrate W. Therefore, it is possible to adjust the amount of liquid film R formed on the surface Wa of the substrate W using the extremely simple method of rotating the substrate W. 【0089】 As shown in the above example, a processing condition model D2 representing the relationship between the processing conditions during processing period T3 and the amount of liquid film R formed on the surface Wa of the substrate W is prepared in advance, and the processing conditions are set based on the processing condition model D2 and the predicted liquid volume calculated in step S16. Therefore, the substrate W is processed quickly without going through trial and error, such as repeatedly forming the liquid film R on the substrate W until the predicted liquid volume is obtained. Thus, it becomes possible to process the substrate W quickly while precisely adjusting the amount of liquid film R formed on the surface Wa of the substrate W. 【0090】 As shown in the above example, the processing conditions can be at least one of the following: the rotation speed of the substrate W during the processing period T3, the rotational acceleration of the substrate W, and the rotation time of the substrate W. Since these are indicators particularly used when controlling the rotation of the substrate W, it becomes possible to more easily adjust the amount of liquid film R formed on the surface Wa of the substrate W. 【0091】 In the above example, cleaning solution L1, rinsing solution L2, and processing solution L3 are sequentially supplied to the substrate W. In this case, the substrate W, which has been cleaned with cleaning solution L1 and rinsing solution L2, is further subjected to the supply of processing solution L3 and a drying process. Therefore, it is possible to maintain the cleanliness of the substrate W after cleaning. 【0092】 In the above example, the measuring unit U13 is configured to measure the temperature of the processing liquid L3 flowing through the tip portion 45b. That is, the temperature of the processing liquid L3 immediately before or slightly before it is discharged onto the substrate W is measured by the measuring unit U13. Therefore, the temperature of the processing liquid L3 supplied to the substrate W is obtained with greater accuracy. Consequently, it becomes possible to more accurately determine the predicted amount of liquid film R formed on the surface Wa of the substrate W. In particular, in the above example, the intermediate portion 45a is located near the pipe 25 through which the cleaning liquid L1 flows, and the temperature of the processing liquid L3 flowing through the tip portion 45b after being heated by the cleaning liquid L1 is measured by the measuring unit U13. Therefore, the temperature of the processing liquid L3 is measured before it is discharged onto the substrate W and after it has been affected by external heat. Consequently, compared to the case where the temperature of the processing liquid L3 flowing upstream of the tip portion 45b is measured, it becomes possible to more accurately determine the predicted amount of liquid film R formed on the surface Wa of the substrate W. 【0093】 As shown in the above example, the substrate W can be dried by supercritical fluid treatment. Therefore, if a pattern is formed on the substrate W, it is possible to suppress the collapse of the pattern during the drying process. 【0094】 As shown in the above example, processing conditions can be corrected based on a comparison between the measured liquid volume 1 and the target range H1. Similarly, processing conditions can be corrected based on a comparison between the measured liquid volume 3 and the target range H4. In this case, the processing conditions are corrected according to the degree to which the amount of liquid film R actually formed on the surface of the substrate W deviates from the standard predicted liquid volume. Therefore, it becomes possible to adjust the amount of liquid film R formed on the surface Wa of the subsequent substrate W with greater precision. 【0095】 Based on the above example, the processing of substrate W can be stopped based on a comparison between the measured liquid volume 1-3 and the target range H1-H3. In this case, there is a concern that defects may have occurred in substrate W after the formation of the liquid film R or after the drying process, so by stopping the processing of substrate W, it is possible to exclude that substrate W from subsequent processing. Therefore, it is possible to increase the productivity of substrate processing. 【0096】 [Differentiation] The disclosures herein should be considered in all respects to be illustrative and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the claims and the gist thereof. 【0097】 (1) When stopping the processing of substrate W in step S24, the operator may be notified of a warning using an alarm or the like. 【0098】 (2) The discharge flow rate of the processing liquid L3 may be changed according to the temperature of the processing liquid L3 measured by the measuring unit U13. 【0099】 (3) A liquid film model D1 may be generated in which the ambient temperature inside the drying unit U2 is associated with the amount of liquid film R formed on the surface of the substrate. 【0100】 [Other examples] Example 1. An example of a substrate processing apparatus comprises a liquid processing unit configured to supply a processing liquid while rotating the substrate to form a liquid film on the surface of the substrate, a measuring unit configured to measure the temperature of the processing liquid supplied to the substrate, a drying processing unit configured to dry the substrate on which the liquid film has been formed, and a control unit. The control unit is configured to perform a first process of calculating a predicted liquid volume of the liquid film to be formed on the surface of the substrate based on a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate and the amount of liquid in the liquid film formed on the surface of the substrate, and the temperature measured by the measuring unit; a second process of setting processing conditions such that the predicted liquid volume calculated in the first process is obtained; and a third process of forming a liquid film on the surface of the substrate in the liquid processing unit based on the processing conditions set in the second process. 【0101】 Incidentally, the liquid film formed on the surface of the substrate plays a role in preventing the substrate surface from drying out and generating particles on the surface before the substrate is transported to the drying treatment area and subjected to drying. However, if the amount of liquid in the liquid film on the substrate surface is too small, the pattern formed on the substrate may collapse during the drying process. On the other hand, if the amount of liquid in the liquid film on the substrate surface is too large, particles may be generated on the substrate after the drying process. Therefore, after diligent research by the inventors, we obtained a new finding that when the temperature of the processing liquid supplied to the substrate changes, the volume of the liquid film formed on the substrate surface expands or contracts, causing variations in the amount of liquid in the liquid film, which can affect the subsequent drying process of the substrate. Based on this finding, we completed the present invention. That is, according to Example 1, a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate and the amount of liquid in the liquid film formed on the substrate surface is prepared in advance, and the processing conditions for the substrate are set so that the temperature of the processing liquid measured during the actual substrate processing matches the predicted liquid volume calculated based on the liquid film model. Therefore, during actual substrate processing, an appropriate amount of liquid film is formed on the substrate surface according to the temperature of the processing liquid supplied to the substrate. Consequently, it becomes possible to precisely control the amount of liquid film formed on the substrate surface. 【0102】 Example 2. In the apparatus of Example 1, the third process may include supplying the processing liquid while rotating the substrate to spread the processing liquid over the substrate surface, and removing any excess processing liquid supplied to the substrate surface by rotating the substrate so that the amount of liquid in the liquid film formed on the substrate surface matches the predicted liquid volume. In this case, it becomes possible to adjust the amount of liquid in the liquid film formed on the substrate surface using the extremely simple method of rotating the substrate. 【0103】 Example 3. In the apparatus of Example 2, the second process may include setting processing conditions based on a processing condition model representing the relationship between the processing conditions for removing excess material from the substrate and the amount of liquid in the liquid film formed on the substrate surface, and the predicted liquid volume calculated in the first process. In this case, by preparing the processing condition model in advance, the processing conditions that result in the predicted liquid volume can be calculated immediately. Therefore, the substrate can be processed quickly without going through trial and error, such as repeatedly forming a liquid film on the substrate until a liquid film with the predicted liquid volume is obtained. Thus, it becomes possible to process the substrate quickly while precisely adjusting the amount of liquid in the liquid film formed on the substrate surface. 【0104】 Example 4. In the apparatus of Example 2 or 3, the processing conditions may be at least one of the following: the rotation speed of the substrate, the rotational acceleration of the substrate, and the rotation time of the substrate when the excess portion is shaken off the substrate. Since these are indicators that are particularly used when controlling the rotation of the substrate, it becomes possible to more easily adjust the amount of liquid film formed on the surface of the substrate. 【0105】 Example 5. In any of the apparatuses in Examples 1 to 4, the control unit may be configured to perform a fourth process before the third process, in which the substrate is rotated while a cleaning solution and a rinsing solution are sequentially supplied to clean the surface of the substrate. In this case, the substrate that has been cleaned with the cleaning solution and rinsing solution is further subjected to the supply of a processing solution and a drying process. This makes it possible to maintain the cleanliness of the substrate after cleaning. 【0106】 Example 6. In the apparatus of Example 5, the liquid processing unit may include a supply line configured for the flow of processing liquid, the supply line may include a tip connected to a discharge nozzle from which the processing liquid is discharged, and the measuring unit may be configured to measure the temperature of the processing liquid flowing through the tip. In this case, the temperature of the processing liquid is measured by the measuring unit immediately before or slightly before it is discharged onto the substrate. Therefore, the temperature of the processing liquid supplied to the substrate can be obtained with greater accuracy. Consequently, it becomes possible to more accurately determine the predicted amount of liquid film formed on the surface of the substrate. 【0107】 Example 7. In any of the apparatuses in Examples 1 to 6, the processing solution supplied to the substrate may be isopropyl alcohol. 【0108】 Example 8. In any of the apparatuses in Examples 1 to 7, the drying section may be configured to dry the substrate on which a liquid film has been formed by supercritical fluid treatment. In this case, the supercritical fluid has lower viscosity than the treatment liquid and also has a high ability to dissolve the treatment liquid. Furthermore, there is no interface between the supercritical fluid and the liquid or gas in equilibrium. Therefore, in supercritical fluid treatment (drying treatment using supercritical fluid), the treatment liquid can be dried without being affected by surface tension. Consequently, if a pattern is formed on the substrate, it is possible to suppress the collapse of the pattern during the drying treatment. 【0109】 Example 9. Any apparatus of Examples 1 to 8 may further include a weighing unit configured to measure weight, and the control unit may be configured to further perform a fifth process after the third process, in which the weighing unit measures the weight of the substrate in which a liquid film has been formed on the surface in the third process; a sixth process, in which the amount of liquid in the liquid film formed on the surface of the substrate is calculated based on the weight measured in the fifth process; and a seventh process, in which the processing conditions set for subsequent substrate processing are corrected based on the difference between the amount of liquid calculated in the sixth process and a predetermined reference value. In this case, the processing conditions are corrected according to the degree to which the amount of liquid in the liquid film actually formed on the surface of the substrate deviates from the reference value. Therefore, it becomes possible to adjust the amount of liquid in the liquid film formed on the surface of subsequent substrates with greater precision. 【0110】 Example 10. In the apparatus of Example 9, the control unit may be configured to perform an eighth process that stops the substrate processing without performing the seventh process if the liquid volume calculated in the sixth process is outside a predetermined target range. In this case, there is a concern that defects may occur in the substrate after the drying process, so by stopping the processing of the substrate, the substrate can be excluded from subsequent processing. Therefore, it is possible to increase the productivity of substrate processing. 【0111】 Example 11. An example of a substrate processing method includes: a first step of constructing a liquid film model that represents the relationship between the temperature of the processing liquid supplied to the substrate in the liquid processing unit and the amount of liquid film formed on the surface of the substrate by the supply of the processing liquid to the substrate; a second step of measuring the temperature of the processing liquid before it is supplied to the substrate in the liquid processing unit using a measuring unit; a third step of calculating a predicted amount of liquid film to be formed on the surface of the substrate in the liquid processing unit based on the liquid film model and the temperature measured by the measuring unit; a fourth step of setting processing conditions such that the predicted amount of liquid calculated in the third step is achieved; a fifth step of supplying the processing liquid while rotating the substrate in the liquid processing unit based on the processing conditions set in the fourth step to form a liquid film on the surface of the substrate; and a sixth step of drying the substrate on which the liquid film has been formed in a drying unit after the fifth step. In this case, the same effects and advantages as the apparatus in Example 1 can be obtained. 【0112】 Example 12. In the method of Example 11, the fifth step may include supplying the processing liquid while rotating the substrate to spread the processing liquid over the substrate surface, and removing any excess processing liquid supplied to the substrate surface by rotating the substrate so that the amount of liquid in the liquid film formed on the substrate surface matches the predicted liquid volume. In this case, the same effects and advantages as the apparatus in Example 2 can be obtained. 【0113】 Example 13. In the method of Example 12, the fourth step may include setting processing conditions based on a processing condition model that represents the relationship between processing parameters for removing excess material from the substrate and the amount of liquid film formed on the substrate surface, and the predicted liquid volume calculated in the third step. In this case, the same effects as the apparatus in Example 3 can be obtained. 【0114】 Example 14. In the method of Example 12 or Example 13, the processing conditions may be at least one of the following: the rotation speed of the substrate, the rotational acceleration of the substrate, and the rotation time of the substrate when the excess portion is shaken off the substrate. In this case, the same effects as the apparatus of Example 4 can be obtained. 【0115】 Example 15. Any of the methods in Examples 11 to 14 may further include a seventh step before the fifth step, in which the substrate surface is cleaned by sequentially supplying cleaning solution and rinsing solution while rotating the substrate. In this case, the same effects as the apparatus in Example 5 can be obtained. 【0116】 Example 16. In the method of Example 15, the liquid processing unit may include a supply line configured for the flow of processing liquid, the supply line may include a tip connected to a discharge nozzle from which the processing liquid is discharged, and the measuring unit may be configured to measure the temperature of the processing liquid flowing through the tip. In this case, the same effects and advantages as the apparatus of Example 6 can be obtained. 【0117】 Example 17. In any of the methods in Examples 11 to 16, the processing solution supplied to the substrate may be isopropyl alcohol. 【0118】 Example 18. In any of the methods in Examples 11 to 17, the drying section may be configured to dry the substrate on which the liquid film has been formed by supercritical fluid treatment. In this case, the same effects and advantages as those of the apparatus in Example 8 can be obtained. 【0119】 Example 19. Any of the methods in Examples 11 to 18 may further include an eighth step, after the fifth step and before the sixth step, in which a weighing unit measures the weight of the substrate in which a liquid film has been formed on its surface in the fifth step; a ninth step, in which the amount of liquid in the liquid film formed on the surface of the substrate is calculated based on the weight measured in the eighth step; and a tenth step, in which the processing conditions set for subsequent substrate processing are corrected based on the difference between the amount of liquid calculated in the ninth step and a predetermined reference value. In this case, the same effects and advantages as the apparatus in Example 9 can be obtained. 【0120】 Example 20. The method of Example 19 may further include an eleventh step in which, if the liquid volume calculated in the ninth step is outside a predetermined target range, the substrate processing is stopped without performing the tenth step. In this case, the same effects and advantages as the apparatus of Example 10 can be obtained. [Explanation of symbols] 【0121】 1...Substrate processing system (substrate processing device), 20...Cleaning liquid supply unit, 40...Processing liquid supply unit, 44...Nozzle (discharge nozzle), 45...Piping (supply line), 45b...Tip section, Ctr...Controller (control unit), L1...Cleaning liquid, L2...Rinse liquid, L3...Processing liquid, D1...Liquid film model, R...Liquid film, U...Substrate processing unit (substrate processing device), U1...Liquid processing unit, U11...Measuring unit, U12...Liquid processing unit, U13...Measurement unit, U2...Drying processing unit, U21...Measuring unit, U22...Drying processing unit, W...Substrate, Wa...Surface.

Claims

[Claim 1] A liquid processing unit configured to supply a processing liquid while rotating the substrate to form a liquid film on the surface of the substrate, A measuring unit configured to measure the temperature of the processing liquid supplied to the substrate, It includes a control unit, The control unit, A first process for calculating the predicted amount of liquid film to be formed on the surface of the substrate, based on a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate and the amount of liquid film formed on the surface of the substrate, and the temperature measured by the measuring unit. A second process involves setting processing conditions such that the predicted liquid volume calculated in the first process is obtained, The system is configured to perform a third process in which a liquid film is formed on the surface of the substrate in the liquid processing unit, based on the processing conditions set in the second process. The third process described above is: The process involves supplying the processing liquid while rotating the substrate, and spreading the processing liquid across the surface of the substrate. The process includes removing excess processing liquid supplied to the surface of the substrate so that the amount of liquid film formed on the surface of the substrate becomes the predicted amount of liquid, by increasing the rotation speed of the substrate from a state where the supply of processing liquid to the substrate has stopped until the rotation speed of the substrate reaches a predetermined target rotation speed, and then starting to decrease the rotation speed of the substrate after a predetermined rotation time has elapsed, thereby removing the excess from the substrate. The substrate processing apparatus includes setting the processing conditions based on the processing conditions for removing the excess portion from the substrate, a processing condition model representing the relationship between the processing conditions and the amount of liquid in the liquid film formed on the surface of the substrate, and the predicted liquid amount calculated in the first processing. [Claim 2] The apparatus according to claim 1, wherein the processing conditions are the target rotation speed and the rotation time when the excess portion is shaken off the substrate. [Claim 3] To shake off the substrate, the excess portion is removed from the substrate by increasing the rotation speed of the substrate with a predetermined rotational acceleration from a state in which the supply of the processing liquid to the substrate has stopped until the rotation speed of the substrate reaches the target rotation speed, and then, after the rotation time has elapsed, starting to decrease the rotation speed of the substrate, thereby shaking off the substrate. The apparatus according to claim 2, wherein the processing conditions are the target rotation speed, the rotational acceleration, and the rotation time when the excess portion is shaken off from the substrate. [Claim 4] The apparatus according to any one of claims 1 to 3, wherein the control unit is configured to perform a fourth process, before the third process, in which the surface of the substrate is cleaned by sequentially supplying a cleaning solution and a rinsing solution while rotating the substrate. [Claim 5] The liquid processing unit includes a supply line configured for the flow of the processing liquid, The supply line includes a tip connected to a discharge nozzle from which the processing liquid is discharged. The apparatus according to claim 4, wherein the measuring unit is configured to measure the temperature of the processing liquid flowing through the tip. [Claim 6] The apparatus according to any one of claims 1 to 5, wherein the processing liquid supplied to the substrate is isopropyl alcohol. [Claim 7] The apparatus according to any one of claims 1 to 6, further comprising a drying section configured to dry the substrate on which the liquid film has been formed. [Claim 8] The apparatus according to claim 7, wherein the drying treatment section is configured to dry the substrate on which the liquid film has been formed by supercritical treatment. [Claim 9] It further comprises a weighing section configured to measure weight, The control unit, A fifth process is performed, after the third process, in which the weight of the substrate in the state in which a liquid film has been formed on the surface in the third process is measured by the weighing unit, A sixth process for calculating the amount of liquid in the liquid film formed on the surface of the substrate based on the weight measured in the fifth process, The apparatus according to claim 7 or 8, further configured to perform a seventh process, which corrects the processing conditions set for subsequent substrate processing based on the difference between the liquid volume calculated in the sixth process and a predetermined reference value. [Claim 10] The apparatus according to claim 9, wherein the control unit is configured to further perform an eighth process that stops processing the substrate without performing the seventh process if the amount of liquid calculated in the sixth process is outside a predetermined target range. [Claim 11] A first step is to construct a liquid film model that represents the relationship between the temperature of the processing liquid supplied to the substrate in the liquid processing unit and the amount of liquid in the liquid film formed on the surface of the substrate as a result of the supply of the processing liquid to the substrate. A second step in the liquid processing unit is to measure the temperature of the processing liquid before it is supplied to the substrate using a measuring unit, A third step of calculating the predicted liquid volume of the liquid film to be formed on the surface of the substrate in the liquid processing unit based on the liquid film model and the temperature measured by the measurement unit, A fourth step involves setting processing conditions such that the predicted liquid volume calculated in the third step is obtained, The process includes a fifth step of supplying a processing liquid to the substrate while rotating it in the liquid processing unit, based on the processing conditions set in the fourth step, thereby forming a liquid film on the surface of the substrate. The fifth step is, The process involves supplying the processing liquid while rotating the substrate, and spreading the processing liquid across the surface of the substrate. The process includes removing excess processing liquid supplied to the surface of the substrate so that the amount of liquid film formed on the surface of the substrate becomes the predicted amount of liquid, by increasing the rotation speed of the substrate from a state where the supply of processing liquid to the substrate has stopped until the rotation speed of the substrate reaches a predetermined target rotation speed, and then starting to decrease the rotation speed of the substrate after a predetermined rotation time has elapsed, thereby removing the excess from the substrate. A substrate processing method, the fourth step of which includes setting the processing conditions based on a processing condition model representing the relationship between the processing conditions for removing the excess portion from the substrate and the amount of liquid in the liquid film formed on the surface of the substrate, and the predicted amount of liquid calculated in the third step. [Claim 12] The method according to claim 11, wherein the processing conditions are the target rotation speed and the rotation time when the excess portion is shaken off the substrate. [Claim 13] To shake off the substrate, the excess portion is removed from the substrate by increasing the rotation speed of the substrate with a predetermined rotational acceleration from a state in which the supply of the processing liquid to the substrate has stopped until the rotation speed of the substrate reaches the target rotation speed, and then, after the rotation time has elapsed, starting to decrease the rotation speed of the substrate. The method according to claim 12, wherein the processing conditions are the target rotation speed, the rotational acceleration, and the rotation time when the excess portion is shaken off the substrate. [Claim 14] The method according to any one of claims 11 to 13, further comprising a seventh step of sequentially supplying a cleaning solution and a rinsing solution while rotating the substrate to clean the surface of the substrate, prior to the fifth step. [Claim 15] The liquid processing unit includes a supply line configured for the flow of the processing liquid, The supply line includes a tip connected to a discharge nozzle from which the processing liquid is discharged. The method according to claim 14, wherein the measuring unit is configured to measure the temperature of the processing liquid flowing through the tip. [Claim 16] The method according to any one of claims 11 to 15, wherein the processing liquid supplied to the substrate is isopropyl alcohol. [Claim 17] The method according to any one of claims 11 to 16, further comprising a sixth step of drying the substrate on which the liquid film has been formed in a drying section after the fifth step. [Claim 18] The method according to claim 17, wherein the drying treatment unit is configured to dry the substrate on which the liquid film has been formed by supercritical treatment. [Claim 19] An eighth step, after the fifth step and before the sixth step, in which the weight of the substrate in which a liquid film has been formed on its surface in the fifth step is measured by a weighing unit, A ninth step is to calculate the amount of liquid in the liquid film formed on the surface of the substrate based on the weight measured in the eighth step, The method according to claim 17 or 18, further comprising a tenth step of correcting the processing conditions set for subsequent substrate processing based on the difference between the liquid volume calculated in the ninth step and a predetermined reference value. [Claim 20] The method according to claim 19, further comprising an eleventh step of stopping the processing of the substrate without performing the tenth step if the amount of liquid calculated in the ninth step is outside a predetermined target range.

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