Method for manufacturing light-emitting elements
The method enhances light extraction efficiency in light-emitting elements by structuring the n-side layer with protrusions formed through precise etching techniques, addressing design limitations and improving luminance and forward voltage.
JP7876104B2Active Publication Date: 2026-06-19NICHIA CORP
Patent Information
- Application Number
- JP2022135986
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-08-29
- Publication Date
- 2026-06-19
- Estimated Expiration
- 2042-08-29
AI Technical Summary
Technical Problem
Existing light-emitting elements face challenges in achieving high light extraction efficiency due to limitations in the design and manufacturing processes.
Method used
A method involving the formation of semiconductor structures with specific regions and protrusions on the n-side layer, utilizing dry and wet etching techniques to create distinct protrusions in different regions, enhancing light extraction surfaces.
Benefits of technology
Improves light extraction efficiency by reducing light absorption and sheet resistance, resulting in higher luminance and reduced forward voltage.
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Abstract
To provide a method of manufacturing a light-emitting element with improved light extraction efficiency.SOLUTION: A method of manufacturing a light-emitting element includes the following steps of: preparing a semiconductor structure that has a first region and a second region on an n-side layer; forming a plurality of first masks on the first region of the n-side layer in a top view; removing the n-side layer exposed from the plurality of first masks while removing the plurality of first masks by dry etching using the plurality of first masks, and thereby, forming a plurality of first convex parts in the first region; then separating the semiconductor structure into a plurality of light-emitting element regions; then forming on the first region a second mask exposing the second region of the n-side layer; and then forming in the second region a plurality of second convex parts by etching using the second mask.SELECTED DRAWING: Figure 11
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Citation Information
Patent Citations
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