Method for manufacturing light-emitting elements
The method enhances light extraction efficiency in light-emitting elements by structuring the n-side layer with protrusions formed through precise etching techniques, addressing design limitations and improving luminance and forward voltage.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- NICHIA CORP
- Filing Date
- 2022-08-29
- Publication Date
- 2026-06-19
AI Technical Summary
Existing light-emitting elements face challenges in achieving high light extraction efficiency due to limitations in the design and manufacturing processes.
A method involving the formation of semiconductor structures with specific regions and protrusions on the n-side layer, utilizing dry and wet etching techniques to create distinct protrusions in different regions, enhancing light extraction surfaces.
Improves light extraction efficiency by reducing light absorption and sheet resistance, resulting in higher luminance and reduced forward voltage.
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