Substrate cleaning apparatus, substrate processing apparatus, substrate cleaning method, and substrate processing method

Abstract

To allow cleaning of the bottom surface of a substrate.SOLUTION: A substrate cleaning device includes a first scrub cleaning member that scrubs the bottom surface of a substrate to be cleaned, a first single pipe nozzle that supplies cleaning liquid to near the center of the bottom surface of the substrate, and a first spray nozzle that supplies the cleaning liquid to the lower surface of the substrate.SELECTED DRAWING: Figure 2

Description

【Technical Field】 【0001】 The present invention relates to a substrate cleaning apparatus, a substrate processing apparatus, a substrate cleaning method, and a substrate processing method. 【Background Art】 【0002】 Patent Documents 1 to 5 disclose a substrate cleaning apparatus for cleaning the upper surface of a substrate. 【Prior Art Documents】 【Patent Documents】 【0003】 【Patent Document 1】 Japanese Patent No. 6600470 【Patent Document 2】 Japanese Patent No. 6710129 【Patent Document 3】 Japanese Patent No. 6877221 【Patent Document 4】 Japanese Patent No. 6964745 【Patent Document 5】 International Publication No. 2021 / 230344 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0004】 An object of the present invention is to enable cleaning of the lower surface of a substrate. 【Means for Solving the Problems】 【0005】 According to one aspect of the present invention, [1] A first scrub cleaning member for scrub cleaning the lower surface of a substrate to be cleaned, A first single-tube nozzle for supplying a cleaning liquid near the center of the lower surface of the substrate, A first spray nozzle for supplying a cleaning liquid to the lower surface of the substrate, and a substrate cleaning apparatus is provided. 【0006】 [2] In the substrate cleaning apparatus according to [1] above, Preferably, the area to which the cleaning solution supplied from the first spray nozzle is applied covers from near the center of the substrate to near the edge of the substrate. 【0007】 [3] In the substrate cleaning apparatus described in [1] or [2] above, A second single-pipe nozzle is positioned so as to be point-symmetric with respect to the center of the substrate when viewed from vertically above, and supplies cleaning fluid to a region near the center of the lower surface of the substrate, which is different from the cleaning fluid supply region from the first single-pipe nozzle. It is preferable to include at least one of the following: a second spray nozzle positioned point-symmetric with respect to the center of the substrate when viewed from vertically above, and which supplies cleaning fluid to the lower surface of the substrate. 【0008】 According to one aspect of the present invention, [4] A first scrubbing cleaning member for scrubbing the underside of the substrate to be cleaned, A first single-pipe nozzle that supplies cleaning fluid to the vicinity of the center of the lower surface of the substrate, A substrate cleaning apparatus is provided, comprising a second single-pipe nozzle that supplies cleaning fluid to a region different from the vicinity of the center of the lower surface of the substrate. 【0009】 [5] In the substrate cleaning apparatus described in [4] above, A third single-pipe nozzle is positioned so as to be point-symmetric with respect to the center of the substrate when viewed from vertically above, and supplies cleaning fluid to a region near the center of the lower surface of the substrate, which is different from the cleaning fluid supply region from the first single-pipe nozzle. It is preferable to include at least one of the following: a fourth single pipe positioned point-symmetric with respect to the center of the substrate when viewed from vertically above, and which supplies cleaning fluid to a region different from the vicinity of the center of the lower surface of the substrate. 【0010】 [6] In the substrate cleaning apparatus described in any of the above [1] to [5], A second scrub cleaning member for scrub cleaning the upper surface of the substrate; A third single-tube nozzle for supplying a cleaning liquid near the center of the upper surface of the substrate; A fourth single-tube nozzle for supplying a cleaning liquid to a region different from the region near the center of the upper surface of the substrate, it is desirable to include. 【0011】 According to one aspect of the present invention, [7] A first nozzle which is a single-tube nozzle for supplying pure water near the center of the lower surface of the substrate to be cleaned; A second nozzle which is a spray nozzle for supplying pure water to the lower surface of the substrate, a substrate cleaning apparatus including is provided. 【0012】 [8] In the substrate cleaning apparatus according to [7] above, Arranged at a position point-symmetrical to the first nozzle with respect to the center of the substrate when viewed from directly above, near the center of the lower surface of the substrate, and supplying pure water to a region different from the pure water supply region from the first nozzle, a third nozzle which is a single-tube nozzle; Arranged at a position point-symmetrical to the second nozzle with respect to the center of the substrate when viewed from directly above, and supplying pure water to the lower surface of the substrate, it is desirable to include at least one of a fourth nozzle which is a spray nozzle. 【0013】 According to one aspect of the present invention, [9] A first nozzle which is a single-tube nozzle for supplying pure water near the center of the lower surface of the substrate to be cleaned; A second nozzle which is a single-tube nozzle for supplying pure water to a region different from the region near the center of the lower surface of the substrate, a substrate cleaning apparatus including is provided. 【0014】

[10] In the substrate cleaning apparatus according to [9] above, A third nozzle, which is a single-tube nozzle, is arranged at a position that is point-symmetrical to the first nozzle with respect to the center of the substrate when viewed from directly above, is near the center of the lower surface of the substrate, and supplies pure water to a region different from the pure water supply region from the first nozzle. It is desirable to include at least one of a fourth nozzle, which is a single-tube nozzle, arranged at a position that is point-symmetrical to the second nozzle with respect to the center of the substrate when viewed from directly above and supplies pure water to a region different from the vicinity of the center of the lower surface of the substrate. 【0015】

[11] In the substrate cleaning apparatus according to any one of [7] to

[10] above, It includes a substrate rotation mechanism configured to rotate the substrate. The supply direction of the pure water supplied from the first nozzle and the tangential direction of the rotation direction of the substrate in the liquid landing region of the pure water supplied from the second nozzle may be in opposite directions. 【0016】

[12] In the substrate cleaning apparatus according to any one of [7] to

[10] above, It includes a substrate rotation mechanism configured to rotate the substrate. The supply direction of the pure water supplied from the first nozzle and the tangential direction of the rotation direction of the substrate in the liquid landing region of the pure water supplied from the second nozzle may be in the same direction. 【0017】

[13] In the substrate cleaning apparatus according to

[12] above, The angle formed by the substrate and the supply direction of the pure water supplied from the first nozzle is preferably 10 to 60 degrees. 【0018】 According to one aspect of the present invention,

[14] A substrate polishing apparatus that polishes a substrate using a polishing liquid, A first substrate cleaning apparatus, which is the substrate cleaning apparatus according to any one of [1] to [6] above, that scrub-cleans the substrate polished by the substrate polishing apparatus using a cleaning liquid. A substrate processing apparatus is provided, comprising: a second substrate cleaning apparatus which is a substrate cleaning apparatus according to any one of [7] to

[13] above, and which cleans the substrate after cleaning by the first substrate cleaning apparatus using pure water. 【0019】 According to one aspect of the present invention,

[15] A substrate cleaning method is provided, which includes a cleaning step of scrubbing the lower surface of the substrate to be cleaned, supplying cleaning liquid from a single-pipe nozzle to the vicinity of the center of the lower surface of the substrate, and supplying cleaning liquid to the lower surface of the substrate from a spray nozzle. 【0020】 According to one aspect of the present invention,

[16] A substrate cleaning method is provided, which includes a cleaning step of supplying cleaning liquid from a first single-pipe nozzle to the vicinity of the center of the lower surface of the substrate while scrubbing the lower surface of the substrate to be cleaned, and supplying cleaning liquid from a second single-pipe nozzle to a region other than the vicinity of the center of the lower surface of the substrate. 【0021】

[17] In the substrate cleaning method described in

[15] or

[16] above, It is preferable to perform the cleaning step after polishing the substrate with a polishing solution to remove the polishing solution from the underside of the substrate. 【0022】 According to one aspect of the present invention,

[18] A substrate cleaning method is provided, which includes a cleaning step of supplying pure water from a single-pipe nozzle to the vicinity of the center of the lower surface of the substrate to be cleaned, and supplying pure water to the lower surface of the substrate from a spray nozzle. 【0023】 According to one aspect of the present invention,

[19] 【0024】 A substrate cleaning method is provided, which includes a cleaning step of supplying pure water from a first single-pipe nozzle to the vicinity of the center of the lower surface of the substrate to be cleaned, and supplying pure water from a second single-pipe nozzle to a region different from the vicinity of the center of the lower surface of the substrate. 【0025】

[20] In the substrate cleaning method described in

[18] or

[19] above, It is preferable to perform the cleaning step after cleaning the substrate with a cleaning solution to remove the cleaning solution from the underside of the substrate. 【0026】 According to one aspect of the present invention, [twenty one] A substrate polishing process in which a substrate is polished using a polishing solution, A first substrate cleaning step is performed after the substrate polishing step, in which the polished substrate is cleaned using a cleaning solution in the substrate cleaning method described in any of

[15] to

[17] above, thereby removing the polishing solution from the lower surface of the substrate. A substrate processing method is provided, which includes, after the first substrate cleaning step, a second substrate cleaning step of removing the cleaning solution from the lower surface of the substrate by cleaning the cleaned substrate with a substrate cleaning method according to any one of claims

[18] to

[20] . [Effects of the Invention] 【0027】 The underside of the circuit board can be cleaned. [Brief explanation of the drawing] 【0028】 [Figure 1] A block diagram showing the schematic configuration of the substrate processing apparatus 100. [Figure 2] A schematic perspective view of the substrate cleaning apparatus 2 according to the first embodiment. [Figure 3] A diagram illustrating the area where cleaning fluid is supplied from cleaning fluid supply nozzles 51 and 52. [Figure 4A] This diagram schematically shows the cleaning process when the rotation direction of the substrate W in the liquid contact area coincides with the supply direction of the cleaning solution. [Figure 4B] This diagram schematically illustrates the cleaning process when the rotation direction of the substrate W in the liquid contact area does not coincide with the supply direction of the cleaning solution. [Figure 5] This figure shows experimental results comparing the cleaning performance on the underside of the substrate W between the substrate cleaning apparatus 2 according to the first embodiment and a comparative substrate cleaning apparatus. [Figure 6A] A schematic perspective view of the substrate cleaning apparatus 2, which is a modified example of the substrate cleaning apparatus 2 in Figure 2. [Figure 6B] A diagram illustrating the cleaning fluid supply area from cleaning fluid supply nozzles 51, 52, 51', and 52'. [Figure 7] A diagram illustrating the cleaning fluid supply area from single-pipe nozzles 51 and 53. [Figure 8] This figure shows experimental results comparing the cleaning performance on the underside of the substrate W between the substrate cleaning apparatus 2' according to the second embodiment and a comparative substrate cleaning apparatus. [Figure 9] A diagram illustrating the cleaning fluid supply area from single-pipe nozzles 51, 53, 51', and 53'. [Figure 10] A schematic perspective view of the substrate cleaning apparatus 3 according to the third embodiment. [Figure 11A] This diagram schematically illustrates the cleaning process when the rotation direction of the substrate W in the liquid contact area does not coincide with the supply direction of the cleaning solution. [Figure 11B] This diagram schematically shows the cleaning process when the rotation direction of the substrate W in the liquid contact area coincides with the supply direction of the cleaning solution. [Figure 12] A diagram illustrating the desired pure water supply area from the single-pipe nozzle 81. [Figure 13] This diagram experimentally shows the relationship between the contact area of ​​pure water and its cleaning power. [Figure 14] A diagram experimentally showing the relationship between vertical angle and cleaning power. [Figure 15] A diagram illustrating the desired pure water supply area from the spray nozzle 82. [Figure 16] A diagram illustrating the desirable arrangement of the pure water supply nozzles 81 and 82 when viewed from vertically above. [Figure 17] This figure shows experimental results comparing the cleaning performance on the underside of the substrate W between the substrate cleaning apparatus 3 according to the third embodiment and a comparative substrate cleaning apparatus. [Figure 18] A schematic perspective view of a modified substrate cleaning apparatus 3, which is a modified example of the substrate cleaning apparatus 3 shown in Figure 10. [Figure 19]This figure shows experimental results comparing the cleaning performance on the underside of the substrate W between the substrate cleaning apparatus 3 according to the fourth embodiment and a comparative example substrate cleaning apparatus. [Modes for carrying out the invention] 【0029】 Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings. 【0030】 Figure 1 is a block diagram illustrating the schematic configuration of the substrate processing apparatus 100. The substrate processing apparatus 100 comprises a substrate polishing apparatus 1 and substrate cleaning apparatuses 2 and 3. There are no particular restrictions on the type, shape, or size of the substrate to be processed; for example, it may be a circular semiconductor wafer with a diameter of 300 mm. 【0031】 The substrate polishing apparatus 1 polishes the surface and / or bevel of the substrate using a polishing solution. After polishing, the top (front) and bottom (back) surfaces of the substrate are covered with polishing solution and polishing debris (defects). Since any known substrate polishing apparatus 1 can be used, its description will be omitted. 【0032】 The substrate cleaning device 2 cleans the top and bottom surfaces of the substrate, which have been polished by the substrate polishing device 1, using a cleaning solution while scrubbing, thereby removing debris. The cleaning solution may be a chemical solution or pure water (Deionized Water: DIW). After cleaning, some cleaning solution remains on the top and bottom surfaces of the substrate. The configuration of the substrate cleaning device 2 will be described in the first and second embodiments. 【0033】 The substrate cleaning device 3 cleans the top and bottom surfaces of the substrate cleaned by the substrate cleaning device 2 using pure water, and replaces any remaining cleaning solution with pure water. The configuration of the substrate cleaning device 3 will be described in the third and fourth embodiments. 【0034】 Although not shown in the figures, the substrate processing apparatus 100 includes a transport device for transporting the substrate to be processed from a load port (not shown) to a substrate polishing apparatus 1, a transport device for transporting the substrate polished by the substrate polishing apparatus 1 to a substrate cleaning apparatus 2, and a transport device for transporting the substrate cleaned by the substrate cleaning apparatus 2 to a substrate cleaning apparatus 3. The substrate processing apparatus 100 may also include a substrate drying apparatus for drying the substrate after cleaning. 【0035】 (First Embodiment) In the first embodiment, the substrate cleaning apparatus 2 will be described in detail. 【0036】 Figure 2 is a schematic perspective view of a substrate cleaning apparatus 2 according to the first embodiment. The substrate cleaning apparatus 2 includes substrate rotating mechanisms 11 to 14, scrub cleaning members 21 and 22, rotating mechanisms 31 and 32, guide rails 33, lifting drive mechanism 34, cleaning fluid supply nozzles 41 and 42 for the upper surface, and cleaning fluid supply nozzles 51 and 52 for the lower surface. 【0037】 The substrate rotation mechanisms 11-14 hold and rotate the substrate W. In this embodiment, the substrate rotation mechanisms 11-14 hold the substrate W in the horizontal direction and rotate it within the horizontal plane. The rotation speed is, for example, 50-500 rpm. 【0038】 Specifically, the substrate rotation mechanism 11 is a roller composed of a holding portion 11a and a shoulder portion (support portion) 11b. The diameter of the shoulder portion 11b is larger than the diameter of the holding portion 11a, and the holding portion 11a is provided on top of the shoulder portion 11b. Substrate rotation mechanisms 12 to 14 have the same configuration as substrate rotation mechanism 11. Substrate rotation mechanisms 11 to 14 are movable toward and away from each other by a drive mechanism (e.g., an air cylinder) not shown. By bringing the substrate rotation mechanisms 11 to 14 toward each other, the holding portions 11a to 14a can hold the substrate W in a nearly horizontal position. In addition, at least one of the substrate rotation mechanisms 11 to 14 is rotationally driven by a rotation mechanism not shown, thereby allowing the substrate W to be rotated in the horizontal plane. 【0039】 The substrate surface that is vertically upward when held by the substrate rotation mechanisms 11-14 is called the upper surface of the substrate W, and the substrate surface that is vertically downward is called the lower surface of the substrate W. Typically, the device is formed on the upper surface of the substrate W. 【0040】 The scrub cleaning member 21 contacts the upper surface of the substrate W and scrubs the upper surface of the substrate W. In this embodiment, the scrub cleaning member 21 is a roll type made of a sponge or the like, and is arranged to extend horizontally from the edge of the substrate W through the center to the opposite edge. 【0041】 The scrub cleaning member 21 is rotated by the rotation mechanism 31 around its longitudinal axis. The rotation mechanism 31 is attached to a guide rail 33 that guides its vertical movement and is supported by a lifting drive mechanism 34. The lifting drive mechanism 34 moves the rotation mechanism 31 and the scrub cleaning member 21 vertically along the guide rail 33. 【0042】 The scrub cleaning member 22 is positioned below the scrub cleaning member 21 and contacts the lower surface of the substrate W to scrub and clean the lower surface of the substrate W. In this embodiment, the scrub cleaning member 22 is a roll type made of a sponge or the like and is positioned to extend horizontally from one edge of the substrate W through the center to the opposite edge. 【0043】 The scrub cleaning member 22 is then rotated by the rotation mechanism 32 around its longitudinal axis. Although the lifting drive mechanism and other components are not shown in the illustration, the rotation mechanism 32 and the scrub cleaning member 22 also move vertically, similar to the scrub cleaning member 21. 【0044】 The cleaning fluid supply nozzles 41 and 42 are positioned above the substrate W and supply cleaning fluid to the upper surface of the substrate W. For example, cleaning fluid supply nozzle 41 is a single-pipe nozzle and supplies cleaning fluid near the center of the upper surface of the substrate W. Cleaning fluid supply nozzle 42 is also a single-pipe nozzle and supplies cleaning fluid to a position different from the center of the upper surface of the substrate W (for example, between the center and the edge). Specifically, the tip diameter of cleaning fluid supply nozzles 41 and 42 can be 1.0 mm in diameter. However, there are no restrictions on the type or number of cleaning fluid supply nozzles 41 and 42, and they may be omitted in some cases. 【0045】 The cleaning fluid supply nozzles 51 and 52 are positioned below the substrate W and supply cleaning fluid to the underside of the substrate W. One feature of this embodiment is that the cleaning fluid supply nozzle 51 is a single-pipe nozzle (hereinafter sometimes referred to as "single-pipe nozzle 51"). The radius of the single-pipe nozzle 51 is, for example, 0.5 to 3 mm. On the other hand, the cleaning fluid supply nozzle 52 is a spray nozzle (hereinafter sometimes referred to as "spray nozzle 52"). Its spreading angle is, for example, 50 to 150 degrees. 【0046】 Comparing the two nozzles, the single-pipe nozzle 51 continuously supplies large droplets to a narrow area on the underside of the substrate W, resulting in a strong impact force. On the other hand, the spray nozzle 52 supplies small droplets discontinuously and dispersedly to a wide area on the underside of the substrate W, resulting in a weak impact force. 【0047】 The cleaning solution used in this substrate cleaning apparatus 2 may be a chemical solution or pure water. The chemical solution may be, for example, an organic solvent or heated water. The pure water may be ultrasonic water or contain microbubbles. The cleaning solution from one nozzle may be a chemical solution and the cleaning solution from another nozzle may be pure water. Alternatively, the cleaning solution from all nozzles may be a chemical solution, or the cleaning solution from all nozzles may be pure water. 【0048】 Furthermore, it is desirable to start and stop the supply of cleaning fluid from cleaning fluid supply nozzles 51 and 52 simultaneously. The flow rate balance of the cleaning fluid supplied from cleaning fluid supply nozzles 51 and 52 is arbitrary, but for example, both are 500 ml / min. The total flow rate of the cleaning fluid supplied from cleaning fluid supply nozzles 51 and 52 is, for example, 500 to 4000 ml / min. 【0049】 Furthermore, the cleaning fluid supply nozzles 51 and 52 may be positioned offset horizontally or vertically. 【0050】 For the purposes of the following explanation, the center of the held substrate W is taken as the origin, the direction in which the scrub cleaning members 21 and 22 extend is the y-direction (the side with the rotation mechanism 31 is considered negative), the direction perpendicular to the y-direction in the horizontal plane is the x-direction (the side with the cleaning fluid supply nozzles 51 and 52 is considered positive), and the vertical direction is the z-direction (upward is considered positive). For example, in Figure 2, the cleaning fluid supply nozzles 51 and 52 are positioned in the region x>0 and z<0. 【0051】 Figure 3 illustrates the cleaning fluid supply area from the cleaning fluid supply nozzles 51 and 52. Figure (a) corresponds to a view of the substrate W from below in the +z direction, and Figure (b) corresponds to a view of the substrate W from the side in the +y direction (however, the scrub cleaning member 22 is omitted). 【0052】 As shown in the figure, the cleaning solution from the single-pipe nozzle 51 is supplied to a narrow liquid contact area A1 that includes the vicinity of the center of the substrate W ("near the center" means that it is desirable to include the center, but it does not have to include the center). The liquid contact area A1 of the cleaning solution from the single-pipe nozzle 51 can also be said to be near the origin. 【0053】 Meanwhile, the cleaning solution from the spray nozzle 52 spreads out in a fan-shaped or conical shape and is supplied to a wide liquid contact area A2 that covers the area from near the center to the edges of the substrate W. The liquid contact area A2 from the spray nozzle 52 is the region where x ≈ 0 and y < 0. The direction from the spray nozzle 52 toward the longitudinal center of the liquid contact area A2 is called the cleaning solution supply direction of the spray nozzle 52. This cleaning solution supply direction is approximately the -x direction. 【0054】 Figure 4A schematically shows the cleaning process when the rotation direction of the substrate W in the liquid contact area coincides with the supply direction of the cleaning solution. Figure (a) corresponds to a view of the substrate W from below in the +z direction, and (b) corresponds to a view of the substrate W from the side in the +y direction. 【0055】 As shown in Figure 4A(a), the substrate W rotates clockwise when viewed from below. In the region where the cleaning solution from the spray nozzle 52 is applied (the region where x ≈ 0 and y < 0), the tangential direction to the rotation of the substrate W is the -x direction. Also, the direction in which the cleaning solution is supplied from the cleaning solution supply nozzles 51 and 52 is the -x direction. Thus, the tangential direction to the rotation of the substrate W in the application region coincides with the direction of cleaning solution supply (both are in the -x direction). 【0056】 As shown in Figure 4A(b), the rotation direction of the scrub cleaning member 21 is counterclockwise when viewed from the side in the +y direction, and the rotation direction of the scrub cleaning member 22 is clockwise (that is, in the region where cleaning liquid is supplied from the spray nozzle 52, at the position where the scrub cleaning members 21 and 22 contact the substrate W, the tangential direction of the rotation direction of the scrub cleaning members 21 and 22 is opposite to the tangential direction of the rotation direction of the substrate W). However, the rotation may be reversed. 【0057】 As shown in the figure, cleaning fluid layers 91 and 92 are formed on the upper and lower surfaces of the substrate W, respectively, and flow in the same direction as the tangential direction of the rotation of the substrate W (i.e., the -x direction). The cleaning fluid in the cleaning fluid layers 91 and 92 that is closer to the substrate W flows more slowly. For example, when the substrate W is rotated at 100 rpm and cleaning fluid is supplied at 1 L / min, the cleaning fluid in the portion less than approximately 10 μm from the substrate W flows particularly slowly at approximately 20 mm / s (estimated value), and is called the viscous sublayer. 【0058】 Furthermore, debris such as polishing liquid and polishing dust adheres to the top and bottom surfaces of the substrate W. This debris is scraped off from the top and bottom surfaces of the substrate W by the scrubbing cleaning members 21 and 22. 【0059】 On the underside of the substrate W, some of the scraped-out debris 93 is carried in the -x direction by the flow of the cleaning liquid layer 92, and because the cleaning liquid from the single-pipe nozzle 51 has a large impact force, it is guided to the edge of the substrate W and efficiently discharged horizontally. 【0060】 Furthermore, some of the scraped-out debris 94 is carried in the +x direction by the rotation of the scrubbing cleaning member 22. At this time, the cleaning liquid from the spray nozzle 52 is colliding with droplets discontinuously, and because the droplets have little momentum (mass), they are easily repelled by the flow of the cleaning liquid layer 92 and do not penetrate to the adhesive lower layer. As a result, the flow of the cleaning liquid layer 92 increases, and the attached material can be removed efficiently. 【0061】 Thus, when the supply direction of the cleaning solution in the liquid contact area coincides with the tangential direction of the rotation direction of the substrate W, the supply of cleaning solution from the single-pipe nozzle 51 and the spray nozzle 52 works effectively on the lower surface of the substrate W, allowing for efficient removal of debris 94. 【0062】 Figure 4B schematically shows the cleaning process when the rotation direction of the substrate W in the liquid contact area does not coincide with the supply direction of the cleaning solution. Figure (a) corresponds to a view of the substrate W from below in the +z direction, and (b) corresponds to a view of the substrate W from the side in the +y direction. 【0063】 As shown in Figure 4B(a), the substrate W rotates counterclockwise when viewed from below. In the region where the cleaning solution from the spray nozzle 52 is applied (the region x≈0 and y<0), the tangential direction to the rotation of the substrate W is the positive direction. In contrast, the direction in which the cleaning solution is supplied from the cleaning solution supply nozzles 51 and 52 is the -x direction. Thus, the tangential direction to the rotation of the substrate W in the application region does not coincide with the direction of cleaning solution supply. 【0064】 As shown in Figure 4B(b), the rotation direction of the scrub cleaning member 21 is counterclockwise when viewed from the side in the +y direction, and the rotation direction of the scrub cleaning member 22 is clockwise (that is, in the region where cleaning liquid is supplied from the spray nozzle 52, at the position where the scrub cleaning members 21 and 22 contact the substrate W, the tangential direction of the rotation direction of the scrub cleaning members 21 and 22 is the same as the tangential direction of the rotation direction of the substrate W). However, the rotation may be reversed. 【0065】 On the underside of the substrate W, the flow of the cleaning liquid layer 92 is in the +x direction, and the rotation direction of the scrubbing cleaning member 22 is also clockwise, so most of the scraped-out debris 95 is carried away in the +x direction. 【0066】 On the other hand, the direction of supply of cleaning liquid from the spray nozzle 52 is the -x direction, which is opposite to the flow of the cleaning liquid layer 92 (+x direction). Because the force of the spray from the spray nozzle 52 is weak and the droplets are fine, the cleaning liquid is repelled by the cleaning liquid layer 92 and falls downward. At this time, the cleaning liquid falls together with the debris 95, so the debris 95 can be efficiently discharged downwards. 【0067】 Thus, even when the direction of supply of the cleaning solution in the liquid contact area does not coincide with the rotation direction of the substrate W, the supply of cleaning solution from the spray nozzle 52 is particularly effective on the underside of the substrate W, allowing for efficient removal of debris. 【0068】 Figure 5 shows experimental results comparing the cleaning performance on the underside of the substrate W between the substrate cleaning apparatus 2 according to the first embodiment and a comparative substrate cleaning apparatus. 【0069】 The comparative example, a substrate cleaning apparatus, is a substrate cleaning apparatus 2 according to the first embodiment, in which the cleaning liquid supply nozzles 51 and 52 are both replaced with comb-type nozzles. The comb-type nozzle is a rod-shaped tube extending parallel to the scrub cleaning member 22, with approximately 10 to 15 holes provided in it, and cleaning liquid is supplied from each hole to the entire lower surface of the substrate W. 【0070】 Furthermore, the substrate cleaning apparatus 2 according to the first embodiment and the comparative substrate cleaning apparatus were made identical in terms of the amount of cleaning solution supplied per unit time, the rotation speed and direction of rotation of the substrate W, and other conditions. 【0071】 The vertical axis in Figure 5 shows the number of defects after cleaning for a certain period of time, normalized for comparative examples. As shown in the figure, in the substrate cleaning apparatus 2 according to this embodiment, which uses a single-pipe nozzle 51 and a spray nozzle 52 instead of a comb-type nozzle, the number of defects remaining on the back surface of the substrate W was reduced to about 40%, whether the cleaning solution was an alkaline chemical solution or pure water. 【0072】 As described above, in the first embodiment, scrubbing is performed on the lower surface of the substrate W while supplying cleaning fluid from the single-pipe nozzle 51 and the spray nozzle 52. This allows for efficient removal of debris such as polishing fluid that adheres to the substrate during polishing from the lower surface of the substrate W. 【0073】 Figure 6A is a schematic perspective view of a modified substrate cleaning apparatus 2 of Figure 2, which includes additional single-pipe nozzles 51' and spray nozzles 52' (however, one of the single-pipe nozzles 51' and spray nozzles 52' may be omitted). Figure 6B is a diagram illustrating the cleaning fluid supply area from the cleaning fluid supply nozzles 51, 52, 51', and 52' in that case, and corresponds to a view of the substrate W from below in the +z direction (however, the scrub cleaning member 22 is omitted). 【0074】 The single-pipe nozzle 51' is located below the substrate W and, when viewed from vertically above, is positioned point-symmetric to the single-pipe nozzle 51 with respect to the center of the substrate W. It is desirable that the single-pipe nozzle 51 and the single-pipe nozzle 51' lie on the same plane. 【0075】 The spray nozzle 52' is located below the substrate W and, when viewed from vertically above, is positioned point-symmetric to the spray nozzle 52 with respect to the center of the substrate W. It is desirable that the spray nozzle 52 and the spray nozzle 52' lie on the same plane. 【0076】 As shown in Figure 6B, the cleaning solution from the single-pipe nozzle 51 is supplied to the liquid application area A1 near the center of the substrate W. The cleaning solution from the single-pipe nozzle 51' is supplied to the liquid application area A1' near the center of the substrate W. It is desirable that the liquid application area A1 and the liquid application area A1' are in different locations. However, it is desirable that one of them includes the vicinity of the center of the substrate W. 【0077】 The cleaning solution from the spray nozzle 52 is supplied to the liquid application region A2, which covers the center and edges of the substrate W. The liquid application region A2 is a region where x ≈ 0 and y < 0. The cleaning solution from the spray nozzle 52' is supplied to the liquid application region A2', which covers the center and edges of the substrate W. It is desirable that the liquid application region A2' is a region where x ≈ 0 and y > 0. 【0078】 (Second Embodiment) The second embodiment is a modified version of the substrate cleaning apparatus 2 described in the first embodiment. The differences from the first embodiment will be mainly described below. 【0079】 The substrate cleaning apparatus 2' according to the second embodiment is modified in which the spray nozzle 52 in the substrate cleaning apparatus 2 according to the first embodiment is replaced with a single-pipe nozzle 53. 【0080】 Figure 7 illustrates the cleaning fluid supply area from the single-pipe nozzles 51 and 53. Figure (a) corresponds to a view of the substrate W from below in the +z direction, and Figure (b) corresponds to a view of the substrate W from the side in the +y direction. 【0081】 As shown in the figure, the cleaning fluid from the single-pipe nozzle 51 is supplied to a narrow liquid contact area A1 that includes (or is near) the center of the substrate W. The cleaning fluid from the single-pipe nozzle 53 is supplied to a narrow liquid contact area A3 in the vicinity of the scrub cleaning member 22 (omitted in Figure 7) and between the center and edge of the substrate W. The liquid contact area A3 of the cleaning fluid from the single-pipe nozzle 53 can be described as the region where x=0 and y<0. The direction of cleaning fluid supply from the single-pipe nozzle 53 may be perpendicular to the direction of the scrub cleaning member 22. 【0082】 Figure 8 shows the experimental results comparing the cleaning performance on the underside of the substrate W between the substrate cleaning apparatus 2' according to the second embodiment and a comparative example substrate cleaning apparatus. The comparison method was the same as in Figure 7, and a comb-type nozzle was used in the comparative example. As shown in the figure, in the substrate cleaning apparatus 2' of this embodiment, which uses single-tube nozzles 51 and 53 instead of a comb-type nozzle, the amount of debris remaining on the back surface of the substrate W was reduced to about 50%, whether the cleaning solution was a chemical solution or pure water. 【0083】 The reason why using single-pipe nozzles 51 and 53 is more efficient at removing debris than using comb-type nozzles is as follows: 【0084】 Since the comb-shaped nozzle supplies cleaning fluid through 10 to 15 holes, when the amount of cleaning fluid supplied per unit time is the same, the single-pipe nozzles 51 and 53 have a stronger impact force on the cleaning fluid layer and a higher impact force (horizontal propulsion force). Therefore, the force that discharges debris horizontally is greater. 【0085】 Moreover, since the comb-shaped nozzle supplies cleaning fluid to a wide area, the single-pipe nozzle 51 can concentrate the cleaning fluid supply to the central part of the substrate W. Therefore, using the single-pipe nozzle 51 can suppress the decrease in cleaning power near the center of the substrate W where the effect of rotation is smaller. 【0086】 In this embodiment, compared to the first embodiment using a spray nozzle 52, the effect of dropping debris downwards is relatively smaller, but the cleaning effect is higher than that of the comparative example using a comb-shaped nozzle. 【0087】 In addition, as in Figure 6A, additional single-pipe nozzles 51' and 53' may be provided (however, one of the single-pipe nozzles 51' and 53' may be omitted). Figure 9 is a diagram illustrating the cleaning fluid supply area from the single-pipe nozzles 51, 53, 51', and 53' in that case, and corresponds to a view of the substrate W from below in the +z direction (however, the scrub cleaning member 22 is omitted). 【0088】 The single-pipe nozzle 51' is located below the substrate W and, when viewed from vertically above, is positioned point-symmetric to the single-pipe nozzle 51 with respect to the center of the substrate W. The single-pipe nozzle 51 and the single-pipe nozzle 51' may be on the same plane. 【0089】 The single-pipe nozzle 53' is located below the substrate W and, when viewed from vertically above, is positioned point-symmetric to the single-pipe nozzle 53 with respect to the center of the substrate W. The single-pipe nozzle 53 and the single-pipe nozzle 53' may be on the same plane. 【0090】 The cleaning solution from the single-pipe nozzle 51 is supplied to the liquid application area A1 near the center of the substrate W. The cleaning solution from the single-pipe nozzle 51' is supplied to the liquid application area A1' near the center of the substrate W. It is desirable that the liquid application area A1' and the liquid application area A1' are different areas. However, it is desirable that one of them includes the center of the substrate W. 【0091】 The cleaning solution from the single-pipe nozzle 53 is supplied to the liquid contact area A3 between the center and edge of the substrate W. The liquid contact area A3 from the single-pipe nozzle 53 is the region where x=0 and y<0. The cleaning solution from the single-pipe nozzle 53' is supplied to the liquid contact area A3' between the center and edge of the substrate W. The liquid contact area A3' from the single-pipe nozzle 53' is the region where x=0 and y>0. 【0092】 (Third embodiment) In the third embodiment, the substrate cleaning apparatus 3 shown in Figure 1 will be described in detail. This substrate cleaning apparatus 3 replaces the cleaning solution remaining on the surface of the substrate W after cleaning with substrate cleaning apparatus 2 with pure water. 【0093】 Figure 10 is a schematic perspective view of a substrate cleaning apparatus 3 according to the third embodiment. This substrate cleaning apparatus 4 has substrate rotation mechanisms 61-64, pure water supply nozzles 71, 72 for the upper surface, and pure water supply nozzles 81, 82 for the lower surface. Compared to the substrate cleaning apparatus 2 shown in Figure 2, the scrub cleaning members 21, 22 and their associated rotation mechanisms 31, 32, guide rails 33, and lifting drive mechanism 34 are not required. Otherwise, it is the same as the substrate cleaning apparatus 2 shown in Figure 2. 【0094】 Furthermore, one feature of this embodiment is that the pure water supply nozzle 81 for the bottom surface is a single-pipe nozzle (hereinafter sometimes referred to as "single-pipe nozzle 81"), and the pure water supply nozzle 82 is a spray nozzle (hereinafter sometimes referred to as "spray nozzle 82"). The area of ​​liquid contact of the pure water supplied from these nozzles is the same as that shown in Figure 3. 【0095】 Figure 11A schematically shows the cleaning process when the rotation direction of the substrate W in the liquid contact area does not coincide with the supply direction of the cleaning solution. Figure (a) corresponds to a view of the substrate W from below in the +z direction, and (b) corresponds to a view of the substrate W from the side in the +y direction. 【0096】 As shown in Figure 11A(a), the substrate W rotates counterclockwise when viewed from below. In the region where the cleaning solution from the spray nozzle 82 is applied (the region x≈0 and y<0), the tangential direction to the rotation of the substrate W is the positive direction. In contrast, the direction of pure water supply from the pure water supply nozzles 81 and 82 is the -x direction. Thus, the tangential direction to the rotation of the substrate W in the application region does not coincide with the direction of pure water supply. 【0097】 Furthermore, layers 96 and 97 of the cleaning solution used in the substrate cleaning device 2 remain on the upper and lower surfaces of the substrate W, respectively. 【0098】 On the underside of the substrate W, the flow of the cleaning liquid layer 97 is in the +x direction. On the other hand, the direction of pure water supply from the spray nozzle 82 is in the -x direction, which is opposite to the flow of the cleaning liquid layer 97 (+x direction). The pure water from the spray nozzle 82 is discharged in discontinuous small droplets that collide over a wide area, and the momentum (mass) of the droplets is small. Therefore, the horizontal flow velocity after the droplets collide with the cleaning liquid layer 97 is small, and they are repelled by the cleaning liquid layer 97 and fall downward. At this time, the pure water falls together with the cleaning liquid layer 97, so the cleaning liquid layer 97 can be efficiently discharged downward. 【0099】 Although a single-pipe nozzle would also have some effect, the spray nozzle 82 is preferable. When pure water is supplied from a single-pipe nozzle, the pure water that lands on the substrate W falls due to gravity before it can spread sufficiently. Therefore, the cleaning solution layer 97 cannot be efficiently removed in areas of the substrate W that are far from the area where the water has landed. In contrast, the spray nozzle 82 can supply pure water to a wide area and widen the area where the water has landed, so the cleaning solution layer 97 can be efficiently removed over a wide area without the pure water falling due to gravity before it can spread sufficiently. 【0100】 Furthermore, when pure water is supplied from a single-pipe nozzle, the force of the pure water is strong, causing the pure water to easily flow back along the substrate W on its underside, resulting in stagnation of the liquid and making it difficult to replace the cleaning liquid layer 97 with pure water. In contrast, the spray nozzle 82 supplies pure water with a weak force, so it does not flow back along the substrate W and is easily repelled and falls downward. This allows the cleaning liquid layer 97 to be efficiently removed downwards. 【0101】 The reason for providing not only the spray nozzle 82 but also the single-pipe nozzle 81 is as follows: Because the cleaning liquid from the spray nozzle 82 lands over a wide area, less cleaning liquid is supplied to the center of the substrate W. Since the rotation speed at the center of the substrate W is relatively low, the liquid flow is poor, and if there is not enough cleaning liquid, the cleaning power may be insufficient. Therefore, in order to supply sufficient cleaning liquid to the center of the substrate W, the cleaning liquid is supplied from the single-pipe nozzle 81 toward the center of the substrate W. 【0102】 FIG. 11B is a diagram schematically showing the state of cleaning when the rotation direction of the substrate W in the liquid application region coincides with the supply direction of the cleaning liquid. FIG. (a) thereof corresponds to a view of the substrate W from below in the +z direction, and (b) corresponds to a view of the substrate W from the side in the +y direction. 【0103】 As shown in FIG. 11B(a), the substrate W rotates clockwise when viewed from below. The tangential direction in the rotation direction of the substrate W in the liquid application region (region where x≒0 and y<0) of the cleaning liquid from the spray nozzle 82 is the -x direction. Also, the pure water supply directions from the pure water supply nozzles 81 and 82 are also the -x direction. Thus, the tangential direction in the rotation direction of the substrate W in the liquid application region coincides with the supply direction of the cleaning liquid. In this case, the cleaning liquid layer 97 is removed horizontally by the rotation of the substrate W, and the cleaning liquid layer 97 is removed downward by the pure water from the pure water supply nozzles 81 and 82. Particularly, when the following-described predetermined conditions are satisfied, the cleaning liquid layer 97 can be replaced with pure water more efficiently. 【0104】 FIG. 12 is a diagram for explaining a desirable pure water supply region from the single-tube nozzle 81. FIG. (a) thereof corresponds to a view of the substrate W from below, and (b) corresponds to a view of the substrate W from the side. 【0105】 As shown in FIG. 12(a), it is desirable that the single-tube nozzle 81 supplies pure water so that the liquid application region fits within the region B1 where 0<x<D, which is in front of the center of the substrate W (on the side of the single-tube nozzle 81). This is because if the liquid application region is in the region where x<0, the cleaning power at the center of the substrate W with a low rotation speed becomes insufficient. Also, if the liquid application region is too close to the edge of the substrate W (region where x is too large) and the single-tube nozzle 81 needs to be oriented upward, the ability to discharge the cleaning liquid layer 97 formed on the lower surface of the substrate W will decrease. 【0106】 FIG. 13 is a diagram experimentally showing the relationship between the liquid attachment region of pure water and the detergency. The position indicated as "nozzle position" is the arrangement position of the single-tube nozzle 81, and six small round marks indicate the liquid attachment regions. Numerical values show the pH after supplying pure water to each liquid attachment region under certain conditions with respect to the lower surface of the substrate W on which the alkaline cleaning liquid layer is formed. 【0107】 When there is a liquid attachment region in the region where x < 0, the pH after supplying pure water is 7.4, and the alkaline cleaning liquid is not sufficiently removed. Also, when there is a liquid attachment region in the region where 53 mm < x, the pH after supplying pure water is 7.8 or 8.0, and the alkaline cleaning liquid is not sufficiently removed. In contrast, when the liquid attachment region is within the region where 0 < x < D = 53 mm, the pH after supplying pure water is 7.0, and the alkaline cleaning liquid is sufficiently removed. 【0108】 From the above, when the diameter of the substrate W is 300 mm, it is desirable that D is 50 mm or less, and more desirable that it is 30 mm or less. Generally, it is desirable that D is 16% or less of the diameter of the substrate W. 【0109】 Returning to FIG. 12, the angle (hereinafter referred to as "vertical angle") α formed by the substrate W and the supply direction of pure water is preferably 10 degrees to 60 degrees, more preferably 20 degrees to 40 degrees, and even more preferably 30 degrees to 35 degrees. This is because when the vertical angle α is too large (close to 90 degrees), the ability to discharge the cleaning liquid layer 97 in the horizontal direction decreases. Also, when the vertical angle α is too small (less than 10 degrees), the ability to discharge the cleaning liquid layer 97 downward decreases. 【0110】 FIG. 14 is a diagram experimentally showing the relationship between the vertical angle and the detergency. It shows the time change of the residual rate of the cleaning liquid layer remaining on the lower surface of the substrate W when the vertical angles are 20 degrees, 30 degrees, 40 degrees, and 60 degrees. It is particularly remarkable at 1 to 1.25 seconds, and it can be seen that it is desirable that the vertical angle is 20 degrees to 40 degrees, and more desirable that it is 30 degrees. 【0111】 Figure 15 illustrates the desired pure water supply area from the spray nozzle 82 and corresponds to a view of the substrate W from below. 【0112】 As shown in the figure, it is desirable to supply pure water from the spray nozzle 82 to the side of the line connecting the single-pipe nozzle 81 and the center of the substrate W. Specifically, the liquid application area A3 of the pure water supplied from the spray nozzle 82 overlaps at least partially with the liquid application area A4 of the pure water supplied from the single-pipe nozzle 81. Furthermore, the liquid application area A3 reaches the edge of the substrate W. This is because if the pure water does not reach the edge, the efficiency of replacing the cleaning liquid layer 97 at the edge with pure water will decrease. 【0113】 Furthermore, the angle (vertical angle) between the substrate W and the direction of pure water supply from the spray nozzle 82 is preferably 15 to 60 degrees, more preferably 20 to 40 degrees, and even more preferably 30 to 35 degrees, similar to the single-pipe nozzle 81. 【0114】 Figure 16 illustrates the desirable arrangement of the pure water supply nozzles 81 and 82 when viewed from vertically above. The distance between the line L connecting the single-pipe nozzle 81 and the spray nozzle 82 and the center of the substrate W is preferably 300 mm or less. Furthermore, when the line connecting the center of the substrate W and the center Lc of line L is taken as the reference line M, the angle β between the reference line M and the line connecting the single-pipe nozzle 81 and the center of the substrate W is preferably between 0 and 75 degrees, and more preferably between 15 and 45 degrees. Furthermore, the angle γ between the reference line M and the line connecting the spray nozzle 82 and the center of the substrate W is preferably between 0 and -75 degrees, and more preferably between -15 and -45 degrees. This is because the pure water from the single-pipe nozzle 81 and the pure water from the spray nozzle 82 are mixed, and the cleaning liquid layer 97 near the center of the substrate W is efficiently discharged horizontally. In particular, the single-pipe nozzle 81 should have a certain degree of angle β in order to efficiently discharge the cleaning liquid layer 97 in the horizontal direction. 【0115】 As described above, in the third embodiment, pure water is supplied to the lower surface of the substrate W from the single-pipe nozzle 81 and the spray nozzle 82 to perform cleaning. This allows for efficient removal of any remaining cleaning solution from the lower surface of the substrate W after cleaning the substrate with the substrate cleaning device 2. 【0116】 Figure 17 shows experimental results comparing the cleaning performance on the underside of the substrate W between the substrate cleaning apparatus 3 according to the third embodiment and a comparative example substrate cleaning apparatus. The vertical axis represents the time required to remove the layer of cleaning solution remaining on the underside of the substrate W, normalized by the comparative example. The comparison method was the same as in Figure 7, and a comb-type nozzle was used as the comparative example. As shown in the figure, in the substrate cleaning apparatus 3 of this embodiment, which uses a single-tube nozzle 81 and a spray nozzle 82 instead of a comb-type nozzle, the time required to remove the cleaning solution was reduced to 20% or less. 【0117】 As with Figure 6A, the substrate cleaning device 3 may also have additional single-pipe nozzles 81' and spray nozzles 82' (see Figure 18; however, one of the single-pipe nozzles 81' and spray nozzles 82' may be omitted). 【0118】 (Fourth Embodiment) The fourth embodiment is a modified version of the substrate cleaning apparatus 3 described in the third embodiment. The differences from the third embodiment will be explained below. 【0119】 The substrate cleaning apparatus 3' according to the fourth embodiment is modified in which the spray nozzle 82 in the substrate cleaning apparatus 3 according to the third embodiment is replaced with a single-pipe nozzle. In this case, the area to which pure water is applied is the same as that shown in Figure 7. 【0120】 Figure 19 shows the results of the cleaning performance experiment in this case. The vertical axis represents the time required to remove the layer of cleaning solution remaining on the underside of the substrate W, normalized by the comparative example. The comparison method is the same as in Figure 17. As shown in the figure, even when the spray nozzle was replaced with a single-tube nozzle, the time required to remove the cleaning solution could be reduced to about 70% compared to the comb-type nozzle. In addition, as in Figure 9, an additional single-pipe nozzle may be provided (however, one of the single-pipe nozzles corresponding to 51' and 53' in Figure 9 may be omitted). 【0121】 In the embodiments described above, the substrate cleaning device 2 and the substrate cleaning device 3 were separate devices. However, if the cleaning solution used in the substrate cleaning device 2 is pure water, the substrate cleaning devices 2 and 3 may be integrated. In this case, the polished substrate is scrubbed with scrub cleaning members 21 and 22 while pure water is supplied to the upper and lower surfaces of the substrate to remove debris generated during polishing. Next, with the scrub cleaning member 21 moved upward and the scrub cleaning member 22 moved downward, pure water is supplied to the upper and lower surfaces of the substrate to remove any pure water remaining on the upper and lower surfaces of the substrate. 【0122】 Based on the above description, those skilled in the art may be able to conceive of additional effects and various modifications of the present invention, but the embodiments of the present invention are not limited to the individual embodiments described above. Various additions, modifications, and partial deletions are possible without departing from the conceptual idea and spirit of the present invention derived from the claims and their equivalents. 【0123】 For example, what is described herein as a single device (or component, hereinafter the same) (including what is depicted as a single device in the drawings) may be implemented by multiple devices. Conversely, what is described herein as multiple devices (including what is depicted as multiple devices in the drawings) may be implemented by a single device. Alternatively, some or all of the means or functions that are included in one device may be included in another device. 【0124】 Furthermore, not all matters described herein are mandatory requirements. In particular, matters described herein but not included in the claims can be considered optional additional matters. 【0125】 It should also be noted that the applicant is only aware of the prior art inventions described in the "Prior Art Documents" section of this specification, and the present invention is not necessarily intended to solve the problems described in those prior art inventions. The problems that the present invention aims to solve should be determined by considering this specification as a whole. For example, if this specification describes that a certain effect is achieved by a particular configuration, it can also be said that the problem that is the inverse of that predetermined effect is solved. However, this does not necessarily mean that such a particular configuration is an essential requirement. [Explanation of Symbols] 【0126】 100 Substrate Processing Equipment 1 Substrate polishing equipment 2,3 Substrate cleaning equipment 11-14, 61-64 Circuit board rotation mechanism 21,22 Scrub cleaning members 31,32 Rotation mechanism 33 Guide rails 34 Lifting drive mechanism 41, 42, 71, 72 Cleaning fluid supply nozzles 51, 51', 53, 53', 81, 81' Single-pipe nozzle 52, 52', 82 spray nozzle 91, 92, 96, 97 Cleaning solution layer 93-95 Garbage

Claims

[Claim 1] A first scrubbing cleaning member for scrubbing the underside of the substrate to be cleaned, A first single-pipe nozzle that supplies cleaning fluid to the vicinity of the center of the lower surface of the substrate, The substrate is equipped with a first spray nozzle that supplies cleaning liquid to the lower surface of the substrate, A substrate cleaning device wherein the first single-pipe nozzle and the first spray nozzle are positioned below the substrate and on the same side as the first scrub cleaning member. [Claim 2] The substrate cleaning apparatus according to claim 1, wherein the area of ​​application of the cleaning liquid supplied from the first spray nozzle covers from near the center of the substrate to near the edge of the substrate. [Claim 3] A second single-pipe nozzle is positioned so as to be point-symmetric with respect to the center of the substrate when viewed from vertically above, and supplies cleaning fluid to a region near the center of the lower surface of the substrate, which is different from the cleaning fluid supply region from the first single-pipe nozzle. A substrate cleaning apparatus according to claim 1 or 2, comprising at least one of the following: a second spray nozzle positioned so as to be point-symmetric with respect to the center of the substrate when viewed from vertically above, and for supplying cleaning liquid to the lower surface of the substrate. [Claim 4] A first scrubbing cleaning member for scrubbing the underside of the substrate to be cleaned, A first single-pipe nozzle that supplies cleaning fluid to the vicinity of the center of the lower surface of the substrate, The substrate is equipped with a second single-pipe nozzle that supplies cleaning fluid to a region different from the vicinity of the center of the lower surface of the substrate, A substrate cleaning device in which the first single-pipe nozzle and the second single-pipe nozzle are positioned below the substrate and on the same side as the first scrub cleaning member. [Claim 5] A third single-pipe nozzle is positioned so as to be point-symmetric with respect to the center of the substrate when viewed from vertically above, and supplies cleaning fluid to a region near the center of the lower surface of the substrate, which is different from the cleaning fluid supply region from the first single-pipe nozzle. A substrate cleaning apparatus according to claim 4, comprising at least one of the following: a fourth single pipe positioned point-symmetric with respect to the center of the substrate when viewed from vertically above, and which supplies cleaning liquid to a region different from the vicinity of the center of the lower surface of the substrate. [Claim 6] A second scrubbing cleaning member for scrubbing the upper surface of the substrate, A fifth single-pipe nozzle that supplies cleaning fluid to the vicinity of the center of the upper surface of the substrate, A substrate cleaning apparatus according to claim 1 or 4, comprising a sixth single-pipe nozzle for supplying cleaning liquid to a region different from the vicinity of the center of the upper surface of the substrate. [Claim 7] A method for cleaning a substrate, comprising a cleaning step of scrubbing the lower surface of the substrate to be cleaned, supplying cleaning liquid from a single-pipe nozzle to the vicinity of the center of the lower surface of the substrate, and supplying cleaning liquid to the lower surface of the substrate from a spray nozzle. [Claim 8] The cleaning process includes scrubbing the lower surface of the substrate to be cleaned with a scrubbing cleaning member, supplying cleaning fluid from a first single-pipe nozzle to the vicinity of the center of the lower surface of the substrate, and supplying cleaning fluid from a second single-pipe nozzle to a region different from the vicinity of the center of the lower surface of the substrate, A method for cleaning a substrate, wherein the first single-pipe nozzle and the second single-pipe nozzle are positioned below the substrate and on the same side as the scrubbing cleaning member. [Claim 9] A substrate cleaning method according to claim 7 or 8, wherein the substrate is polished using a polishing liquid, and then the cleaning step is performed to remove the polishing liquid from the lower surface of the substrate. [Claim 10] A method for cleaning a substrate, comprising a cleaning step of supplying pure water from a single-pipe nozzle to the vicinity of the center of the lower surface of the substrate to be cleaned, while simultaneously supplying pure water to the lower surface of the substrate from a spray nozzle. [Claim 11] The substrate cleaning method according to claim 10, wherein the substrate is cleaned using a cleaning solution, and the cleaning step is performed to remove the cleaning solution from the lower surface of the substrate. [Claim 12] A substrate polishing process in which a substrate is polished using a polishing solution, A first substrate cleaning step is performed after the substrate polishing step, in which the polished substrate is cleaned using a cleaning solution in the substrate cleaning method described in claim 7 or 8, thereby removing the polishing solution from the lower surface of the substrate. A substrate processing method comprising: a second substrate cleaning step, after the first substrate cleaning step, the cleaning solution being removed from the lower surface of the substrate by cleaning the cleaned substrate using the substrate cleaning method described in claim 10.