Substrate processing equipment

Abstract

To provide a substrate processing apparatus capable of suppressing deterioration in exhaust characteristic while suppressing scattering of particles generated at a partition member to a substrate.SOLUTION: A substrate processing apparatus includes: a chamber having an exhaust port at a bottom part; a substrate support part that is arranged in the chamber; a partition member that parts a substrate processing region and an exhaust region leading to the exhaust port; and one or more plate-like members that are provided on an upstream side from the partition member with respect to a flow of exhaust to the exhaust port, and blocks particles from the partition member. At least one of the one or more plate-like members includes a penetration hole through which the exhaust to the exhaust port can be passed and which is opened to a side surface side of the substrate support part or an inner surface side of the chamber.SELECTED DRAWING: Figure 11

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus.

Background Art

[0002] In a plasma processing apparatus, for example, an annular exhaust passage for exhausting a processing gas to the outside of a chamber is provided around a substrate support portion that supports a substrate to be processed. Further, a baffle plate (hereinafter also referred to as a partitioning member) for adjusting the flow of the processing gas is provided in the exhaust passage. The baffle plate is provided with through-holes through which the processing gas passes (Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a substrate processing apparatus that suppresses the deposition of particles generated by a partitioning member on a substrate while suppressing a decrease in exhaust characteristics.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a chamber having an exhaust port at the bottom, a substrate support portion disposed in the chamber, a partitioning member that partitions a substrate processing region and an exhaust region connected to the exhaust port, and one or more plate-like members provided upstream of the partitioning member with respect to the exhaust flow to the exhaust port and blocking particles from the partitioning member, and at least one of the one or more plate-like members has a through-hole through which the exhaust to the exhaust port can pass and opens toward the side surface of the substrate support portion or the inner surface of the chamber.

Effects of the Invention

[0006] According to this disclosure, it is possible to suppress the arrival of particles generated by the partition member onto the substrate while suppressing a decrease in exhaust characteristics. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 shows an example of a plasma processing system in one embodiment of the present disclosure. [Figure 2] Figure 2 shows an example of a plasma processing apparatus in this embodiment. [Figure 3] Figure 3 is a partially enlarged view showing an example of a cross-section near the baffle plate in this embodiment. [Figure 4] Figure 4 is an explanatory diagram showing an example of a shielding mechanism using a plate-shaped member. [Figure 5] Figure 5 is an explanatory diagram showing an example of the shielding effect provided by through holes. [Figure 6] Figure 6 is an explanatory diagram showing an example of the angle of a through-hole that can be shielded. [Figure 7] Figure 7 is an explanatory diagram showing an example of the angle of a through-hole that can be shielded. [Figure 8] Figure 8 is an explanatory diagram showing an example of the relationship between the dimensions and angle of a through hole. [Figure 9] Figure 9 is an explanatory diagram showing an example of the relationship between the dimensions and angle of a through hole. [Figure 10] Figure 10 is an explanatory diagram showing an example of the possible angles of a through hole. [Figure 11] Figure 11 shows an example of a combination of plate-shaped members and through-holes in the embodiment. [Figure 12] Figure 12 shows an example of the arrangement of plate-shaped members and through holes in Modification Example 1. [Figure 13] Figure 13 shows an example of the arrangement of plate-shaped members and through holes in Modification Example 2. [Figure 14] Figure 14 shows an example of the arrangement of plate-shaped members and through holes in Modification Example 3. [Figure 15]FIG. 15 is a diagram showing an example of a combination of the arrangement of the plate-like member and the through-hole in Modification 4. [Figure 16] FIG. 16 is a diagram showing an example of a combination of the arrangement of the plate-like member and the through-hole in Modification 5. [Figure 17] FIG. 17 is a diagram showing an example of a combination of the arrangement of the plate-like member and the through-hole in Modification 6. [Figure 18] FIG. 18 is a diagram showing an example of a combination of the arrangement of the plate-like member and the through-hole in Modification 7. [Figure 19] FIG. 19 is a diagram showing an example of a combination of the arrangement of the plate-like member and the through-hole in Modification 8. [Figure 20] FIG. 20 is a diagram showing an example of a combination of the arrangement of the plate-like member and the through-hole in Modification 9. [Figure 21] FIG. 21 is a diagram showing an example of the arrangement when the through-hole in Modification 9 is viewed from the vertical direction.

Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments of the disclosed substrate processing apparatus will be described in detail based on the drawings. Note that the disclosed technology is not limited by the following embodiments.

[0009] As described above, in the plasma processing apparatus, since the baffle plate is located near the boundary between the plasma processing space and the exhaust passage, ions and radicals generated by the plasma may collide and particles may be generated. If the generated particles adhere to the substrate to be processed in the plasma processing space, contact failure due to etching defects, element connection, etc. may occur. Therefore, as a countermeasure against particles generated from the lower part of the chamber such as the baffle plate, it is conceivable to arrange a plate-like member above the baffle plate to shield the particles. However, in order to improve the shielding effect of the particles, if the area of the plate-like member is increased or a plurality of plate-like members are overlapped, the conductance when exhausting from the chamber deteriorates. That is, the exhaust characteristics deteriorate. When the conductance deteriorates, in the conditions of low pressure and large flow rate, the operation range such as pressure and the flow rate of the processing gas becomes narrow, and it may be difficult to perform processing on the substrate under appropriate conditions. Therefore, it is expected to suppress the flying of particles generated by the partition member (baffle plate) to the substrate while suppressing the deterioration of the exhaust characteristics.

[0010] [Configuration of Plasma Processing System] FIG. 1 is a diagram showing an example of a plasma processing system in an embodiment of the present disclosure. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generation portion 12. The plasma processing chamber 10 has a plasma processing space. Further, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply portion 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support portion 11 is disposed in the plasma processing space and has a substrate support surface for supporting the substrate.

[0011] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR), a helicon wave plasma (HWP), or a surface wave plasma (SWP), etc. Various types of plasma generation units, including an AC (Alternating Current) plasma generation unit and a DC (Direct Current) plasma generation unit, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0012] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or it may be obtained via a medium when needed. The obtained program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0013] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of a plasma processing apparatus 1. Figure 2 shows an example of a plasma processing apparatus in this embodiment.

[0014] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0015] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0016] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b placed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode, coupled to the RF power supply 31 and / or DC power supply 32 described later, may be placed within the ceramic member 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or DC signal, described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0017] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0018] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0019] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0020] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0021] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 can function as at least part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0022] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0023] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. One or more generated bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0024] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0025] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or a combination thereof pulse waveform. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have positive or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0026] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0027] The plasma processing space 10s and the gas outlet 10e are separated by a baffle plate 50. The baffle plate 50 is positioned between the side wall of the main body 111 and the support member 51 of the side wall 10a. In other words, the baffle plate 50 is an example of a partition member that divides the inside of the plasma processing chamber 10 into a plasma processing space 10s, which is the processing area for substrate processing, and an exhaust area connected to the gas outlet 10e. The baffle plate 50 is made of, for example, iron or aluminum, and has a thermal spray coating of yttria or the like formed on its surface. The baffle plate 50 is provided with multiple through holes for exhaust.

[0028] On the plasma processing space 10s side of the baffle plate 50, a first plate-shaped member 61 and a second plate-shaped member 62 are arranged to shield particles generated from the lower part of the plasma processing chamber 10. The first plate-shaped member 61 and the second plate-shaped member 62 are formed in an annular shape so as to surround the substrate support portion 11. The first plate-shaped member 61 and the second plate-shaped member 62 block the flight path of particles from the baffle plate 50, either directly or by primary reflection from the substrate W. The first plate-shaped member 61 and the second plate-shaped member 62 are made of, for example, quartz or silicon. In addition, at least one of the first plate-shaped member 61 and the second plate-shaped member 62 is provided with a through hole formed toward another member different from the substrate W, which is located in the processing area, in order to ensure conductance when exhausting from inside the plasma processing chamber 10.

[0029] [Layout of plate-shaped members] Figure 3 is a partially enlarged view showing an example of a cross-section near the baffle plate in this embodiment. As shown in Figure 3, a shield member 111c and a first plate-shaped member 61 are arranged on the side wall of the substrate support portion 11. The shield member 111c is made of, for example, quartz or silicon. The ring assembly 112 arranged in the annular region 111b has an edge ring 112a and a covering ring 112b. The covering ring 112b is arranged on the upper part of the shield member 111c which constitutes a part of the annular region 111b, and together with the shield member 111c, it constitutes the side surface of the substrate support portion 11. The edge ring 112a is made of a conductive material or insulating material such as silicon or quartz. The covering ring 112b is made of an insulating material such as quartz.

[0030] The first plate-shaped member 61 is positioned with a gap between it and the support member 51 on the side wall 10a side. On the other hand, the second plate-shaped member 62 is positioned above the support member 51 on the side wall 10a side. The second plate-shaped member 62 is positioned with a gap between it and the shield member 111c on the substrate support portion 11 side. In other words, the first plate-shaped member 61 and the second plate-shaped member 62 are positioned alternately. The gap between the first plate-shaped member 61 and the support member 51, and the gap between the second plate-shaped member 62 and the shield member 111c, serve as passages for the exhausted processing gas. A coating film 52, such as quartz or silicon, is formed on the inner circumferential surface of the side wall 10a above the second plate-shaped member 62. The support member 51 is made of, for example, quartz or silicon.

[0031] Region 10s1 shown in Figure 3 is a region of the plasma processing chamber 10 where no particles are generated directly or by primary reflection from the substrate W. Region 10s1 is generally the space between the upper electrode 13d of the shower head 13 and the substrate W, and the space enclosed by the periphery of the shower head 13, the coating film 52, and the upper surface of the second plate-shaped member 62.

[0032] Region 10s2 is a region that traps particles generated from the bottom of the plasma processing chamber 10 by reflecting them off the wall surface at least once. Region 10s2 is generally the space enclosed by the side surface of the shield member 111c, the side surface of the covering 112b, the upper surface of the first plate-like member 61, the side surface of the support member 51, and the lower surface of the second plate-like member 62. Region 10s2 also includes the lower surface and side surface of the first plate-like member 61. In Figure 3, the wall surface to which the generated particles first collide is mainly shown as part of the extent of region 10s2.

[0033] Region 10s3 is a region in the lower part of the plasma processing chamber 10 where particles are generated. Region 10s3 is the region surrounded by the surface of the baffle plate 50. In region 10s3, ions and radicals collide with the thermal spray coating on the baffle plate 50, generating particles containing yttrium in the thermal spray coating, as well as the underlying iron and aluminum. In Figure 3, the flight path of the particles generated in region 10s3 is shown as path 50p.

[0034] Here, the particle shielding mechanism by plate-shaped members will be explained using Figure 4. Figure 4 is an explanatory diagram showing an example of a shielding mechanism by plate-shaped members. The particle region 10s4 shown in Figure 4 is the region that is directly hit by particles generated in region 10s3 shown in Figure 3. If the first plate-shaped member 61 and the second plate-shaped member 62 shown in Figure 4 do not have through holes, the particles are 100% shielded by the first plate-shaped member 61 and the second plate-shaped member 62. The particles that fly to the very top are those in the area enclosed by paths 50p1 and 50p2, but even if these are reflected by the shield member 111c, they fly towards the side wall 10a of the plasma processing chamber 10, so they do not reach the substrate W in a single reflection. However, if the first plate-shaped member 61 and the second plate-shaped member 62 do not have through holes, the amount of overlap between the first plate-shaped member 61 and the second plate-shaped member 62 increases, and the exhaust conductance deteriorates. Therefore, in this embodiment, exhaust conductance is improved by providing a through hole in at least one of the first plate-shaped member 61 and the second plate-shaped member 62.

[0035] [Details of the through-hole] Next, the details of the through-hole will be explained using Figures 5 to 10. Figure 5 is an explanatory diagram showing an example of the shielding effect by the through-hole. As shown in Figure 5, when a circular through-hole 71 with an angle θh is made in the plate-shaped member 70, the range in which particles pass through the through-hole 71 from the particle region 10s4 is the range of incident angles sandwiched between lines 73 and 74. In other words, particles incident at angles other than those sandwiched between lines 73 and 74 can be blocked. Furthermore, the number of particles passing through the through-hole 71 can also be reduced by reducing the diameter of the through-hole 71 or increasing the thickness of the plate-shaped member 70.

[0036] Figures 6 and 7 are explanatory diagrams showing an example of the angle of a through-hole that can be shielded. In Figure 6, a through-hole 71 with angle θh1 shows the case where particles with an incident angle greater than the shielding limit angle shown by line 75 are shielded. For example, particles with an incident angle shown by line 76 hit the inner wall of the through-hole 71 and are trapped. The trapping region 10s5 represents the region on the inner wall of the through-hole 71 where particles with an incident angle greater than the shielding limit angle shown by line 75 are trapped, and the region on the lower surface of the plate-shaped member 70 where particles are trapped.

[0037] Figure 7 shows the case where particles with an incident angle smaller than the blocking limit angle shown by line 75a are blocked in a through hole 71a with an angle θh2. For example, particles with an incident angle shown by line 76a are trapped when they hit the inner wall of the through hole 71a. The trapping region 10s6 represents the region on the inner wall of the through hole 71a where particles with an incident angle smaller than the blocking limit angle shown by line 75a are trapped, and the region on the lower surface of the plate-shaped member 70 where particles are trapped.

[0038] Figures 8 and 9 are explanatory diagrams illustrating an example of the relationship between the dimensions and angle of a through-hole. Figure 8 shows the relationship between the dimensions and angle of a through-hole when the through-hole 71 is inclined toward the acute angle side (angle θh1 side). In Figure 8, when the thickness of the plate-like member 70 is t, the diameter of the through-hole 71 is d, and the required maximum shielding angle is θm, the limit hole angle θh1, which represents the limit of the angle of the through-hole 71, can be expressed by the following equation (1). Note that the limit hole angle θh1 corresponds to the angle θh1 in Figure 6.

[0039]

number

[0040] Here, the required maximum shielding angle θm is the angle that the line 75 connecting the position where the through-hole 71 is made on the surface of the plate-shaped member 70 and the limit point where particles passing through the through-hole 71 do not land on the substrate W directly or by primary reflection makes with the horizontal plane. For example, the line connecting the upper end of the covering 112b, which is the uppermost part of the region 10s2 shown in Figure 3, and the position where the through-hole is made in the first plate-shaped member 61 makes with the horizontal plane. Note that the required maximum shielding angle θm in Figure 8 is an example of angle θm1. The limit hole angle θh1 is the acute angle of the two angles that can be shielded with respect to the required maximum shielding angle θm. In other words, the through-hole 71 is provided at an angle less than or equal to the limit hole angle θh1.

[0041] Figure 9 shows the relationship between the dimensions of the through-hole and the angle when the through-hole 71a is inclined toward the obtuse angle side (angle θh2 side). In Figure 9, when the thickness of the plate-like member 70 is t, the diameter of the through-hole 71a is d, and the required maximum shielding angle is θm, the limit hole angle θh2, which represents the limit of the angle of the through-hole 71a, can be expressed by the following equation (2). Note that the limit hole angle θh2 corresponds to the angle θh2 in Figure 7.

[0042]

number

[0043] Here, the required maximum shielding angle θm is the angle that the line 75a, which connects the position where the through-hole 71a is made on the surface of the plate-shaped member 70 and the limiting point where particles passing through the through-hole 71a do not land on the substrate W directly or by primary reflection, makes with the horizontal plane. Note that the required maximum shielding angle θm in Figure 9 is an example of angle θm2. Furthermore, the limiting hole angle θh2 is the obtuse angle of the two angles that can be shielded relative to the required maximum shielding angle θm. In other words, the through-hole 71a is provided at an angle greater than or equal to the limiting hole angle θh2.

[0044] Figure 10 is an explanatory diagram showing an example of the possible angles of a through-hole. In Figure 10, the possible angles of the through-holes 71 and 71a are summarized based on the limit hole angles θh1 and θh2 shown in Figures 8 and 9. As shown in Figure 10, the range of angles that the through-holes 71 and 71a can take is the range 77 from 0 degrees to the limit hole angle θh1 and the range 78 from the limit hole angle θh2 to 180 degrees. In other words, if the angle of the through-holes 71 and 71a is within the ranges 77 and 78, particles that land on the substrate W can be blocked either directly or by primary reflection.

[0045] [Arrangement of plate-like members and through holes] Next, the arrangement of plate-like members and through holes will be explained using Figure 11. Figure 11 is a diagram showing an example of a combination of arrangements of plate-like members and through holes in the embodiment. In Figure 11, the case in which a first plate-like member 61a, which has a through hole in the first plate-like member 61, is combined with a second plate-like member 62a, which does not have a through hole will be explained.

[0046] First, we will explain how to determine the angle of the through-hole provided in the first plate-shaped member 61a. In Figure 11, particles passing through the through-hole in the first plate-shaped member 61a are trapped by the side walls of the shield member 111c and the covering 112b. In this case, the direction of the through-hole faces the substrate support portion 11, so the angle of the through-hole is set to an angle greater than or equal to the limit hole angle θh2. Next, we determine the required maximum shielding angle θm, which is the angle of the line connecting the position of the through-hole in the first plate-shaped member 61a and the upper end portion 112c of the covering 112b. For the through-hole 71b, the angle of the line 80b connecting the position of the through-hole 71b and the upper end portion 112c of the covering 112b is set to the required maximum shielding angle θm, and the angle is set to be greater than or equal to the limit hole angle θh2 calculated based on the above formula (2). Similarly, for the through-hole 71c, the angle of the line 80c connecting the position of the through-hole 71c and the upper end portion 112c of the covering 112b is set as the required maximum shielding angle θm, and the angle is set to be greater than or equal to the limit hole angle θh2 calculated based on the above formula (2). At this time, the limit hole angle θh2 can be adjusted by adjusting the diameter d of the through-holes 71b and 71c. Alternatively, the thickness t of the first plate-like member 61a may be adjusted. Multiple through-holes 71b and 71c are provided in the circumferential direction of the first plate-like member 61a. Furthermore, through-holes that open toward the side of the base support portion 11, as shown in the through-holes 71b and 71c, mean through-holes that open toward the side of the base support portion 11 or toward a member placed on the outer circumference of the base support portion 11 (for example, a ring assembly 112, etc.) so that particles from the partition member (baffle plate 50) fly toward the side of the base support portion 11 or toward a member placed on the outer circumference of the base support portion 11.

[0047] The particle region 10s4 in Figure 11 is the shaded area in Figure 11. In other words, the particle region 10s4 consists of the area surrounded by the baffle plate 50, the area where particles that have passed between the first plate-shaped member 61a and the support member 51 arrive, and the area where particles that have passed through the through holes 71b and 71c arrive. Particles that have passed through the through holes 71b and 71c of the first plate-shaped member 61a are shielded by the side walls of the shield member 111c and the covering 112b. Particles that have passed between the first plate-shaped member 61a and the support member 51 are shielded by the second plate-shaped member 62a and the shield member 111c. This makes it possible to block particles that land on the substrate W directly or by primary reflection from the baffle plate 50, and the reduction in exhaust conductance can be suppressed by the through holes 71b and 71c. In other words, it is possible to achieve a particle shielding rate equivalent to that of a plate-shaped member without through holes, while suppressing a decrease in exhaust characteristics. That is, it is possible to suppress the arrival of particles generated by the partition member (baffle plate 50) onto the substrate W, while suppressing a decrease in exhaust characteristics.

[0048] Next, modifications 1 to 9 of the arrangement of the plate-shaped members and through holes will be described using Figures 12 to 21. Note that components identical to those in the plasma processing apparatus 1 of the embodiment are denoted by the same reference numerals, and the description of overlapping components and operations will be omitted. Since modifications 1 to 9 are variations of the through holes provided in the first plate-shaped member 61 and the second plate-shaped member 62, they will be explained using the same diagram as in Figure 11.

[0049] [Example 1] Figure 12 shows an example of a combination of plate-like members and through-holes in Modification 1. In Modification 1 of Figure 12, the case in which a first plate-like member 61b, which has inclined through-holes and vertical through-holes in the first plate-like member 61, is combined with a second plate-like member 62a that does not have through-holes is described.

[0050] First, we will explain how to determine the angle of the through-hole provided in the first plate-shaped member 61b. In modified example 1, particles that pass through the through-hole in the first plate-shaped member 61b are trapped by the second plate-shaped member 62a. In this case, the direction of the through-hole faces the side wall 10a of the plasma processing chamber 10, so the angle of the through-hole is set to an angle less than or equal to the limit hole angle θh1. Next, we determine the required maximum shielding angle θm, which is the angle of the line connecting the position of the through-hole in the first plate-shaped member 61b and the end portion 62b of the second plate-shaped member 62a. For the through-hole 71d, the angle of the line 80d connecting the position of the through-hole 71d and the end portion 62b of the second plate-shaped member 62a is set to the required maximum shielding angle θm, and the angle is set to an angle less than or equal to the limit hole angle θh1 calculated based on the above formula (1). Similarly, for the through-hole 71e, the angle of the line 80e connecting the position of the through-hole 71e and the end portion 62b of the second plate-shaped member 62a is set as the required maximum shielding angle θm, and the angle is set to be less than or equal to the limit hole angle θh1 calculated based on the above formula (1). At this time, the limit hole angle θh1 can be adjusted by adjusting the diameter d of the through-holes 71d and 71e. Alternatively, the thickness t of the first plate-shaped member 61b may be adjusted. Multiple through-holes 71d and 71e are provided in the circumferential direction of the first plate-shaped member 61b. Furthermore, through-holes that open toward the inner surface of the plasma processing chamber 10, as shown in the through-holes 71d and 71e, mean through-holes that open toward the inner surface of the plasma processing chamber 10, or toward a member (for example, the second plate-shaped member 62a, etc.) located on the inner surface of the plasma processing chamber 10, so that particles from the partition member (baffle plate 50) fly toward it.

[0051] Multiple vertical through-holes 71f are provided in the radial and circumferential directions of the first plate-shaped member 61b at positions overlapping with the second plate-shaped member 62a on the side wall 10a side of the first plate-shaped member 61b. The possible range for installing the through-holes 71f is from the end of the first plate-shaped member 61b to the portion facing the end 62b of the second plate-shaped member 62a. Particles that pass through the through-holes 71d, 71e, and 71f of the first plate-shaped member 61b are blocked by the second plate-shaped member 62a. The particle region 10s4 in the modified example 1 is the shaded area in Figure 12. That is, the particle region 10s4 is the region surrounded by the baffle plate 50, the region where particles that have passed between the first plate-shaped member 61b and the support member 51 fly, and the region where particles that have passed through the through-holes 71d, 71e, and 71f fly. Furthermore, particles that pass between the first plate-shaped member 61b and the support member 51 are shielded by the second plate-shaped member 62a and the shield member 111c. This prevents particles from landing on the substrate W either directly or by primary reflection from the baffle plate 50, and the through holes 71b, 71c, and 71f further suppress the decrease in exhaust conductance. In other words, it is possible to suppress the arrival of particles generated by the partition member (baffle plate 50) onto the substrate W while further suppressing the decrease in exhaust characteristics.

[0052] [Differentiation 2] Figure 13 shows an example of a combination of plate-like members and through-holes in Modification 2. Modification 2 in Figure 13 describes a case in which a first plate-like member 61c without through-holes is combined with a second plate-like member 62c having inclined through-holes and vertical through-holes in the second plate-like member 62.

[0053] First, we will explain how to determine the angle of the through-hole provided in the second plate-shaped member 62c. In modified example 2, particles that pass through the through-hole in the second plate-shaped member 62c are trapped by the periphery of the shower head 13 and the coating film 52. Note that particles that pass through the through-hole in the second plate-shaped member 62c are particles that have already been reflected at least once. In this case, the direction of the through-hole faces the side wall 10a of the plasma processing chamber 10, so the angle of the through-hole is set to an angle less than or equal to the limit hole angle θh1. Next, we determine the required maximum shielding angle θm, which is the angle of the line connecting the position of the through-hole in the second plate-shaped member 62c and the end portion 61d of the first plate-shaped member 61c. For the through-hole 72a, the angle of the line 81a connecting the position of the through-hole 72a and the end portion 61d of the first plate-shaped member 61c is set as the required maximum shielding angle θm, and the angle is set to be less than or equal to the limit hole angle θh1 calculated based on the above formula (1). Similarly, for the through-hole 72b, the angle of the line 81b connecting the position of the through-hole 72b and the end portion 61d of the first plate-like member 61c is set as the required maximum shielding angle θm, and the angle is set to be less than or equal to the limit hole angle θh1 calculated based on the above formula (1). At this time, the limit hole angle θh1 can be adjusted by adjusting the diameter d of the through-holes 72a and 72b. Alternatively, the thickness t of the second plate-like member 62c may be adjusted. Note that multiple through-holes 72a and 72b are provided in the circumferential direction of the second plate-like member 62c.

[0054] Multiple vertical through-holes 72c are provided in the radial and circumferential directions of the second plate-shaped member 62c at a position overlapping with the first plate-shaped member 61c on the shield member 111c side of the second plate-shaped member 62c. The possible range for installing the through-holes 72c is from the end of the second plate-shaped member 62c to the portion facing the end 61d of the first plate-shaped member 61c. Particles passing between the first plate-shaped member 61c and the support member 51 are incident on the through-holes 72a, 72b, and 72c at an angle greater than the required maximum shielding angle θm, so they are shielded by the second plate-shaped member 62c even if the through-holes 72a, 72b, and 72c are present.

[0055] In the modified example 2, the particle region 10s4 is the shaded area in Figure 13. That is, the particle region 10s4 is the area surrounded by the baffle plate 50 and the area where particles that have passed between the first plate-shaped member 61c and the support member 51 arrive. Particles that have passed between the first plate-shaped member 61c and the support member 51 are shielded by the second plate-shaped member 62c and the shield member 111c. This prevents particles that land on the substrate W either directly or by primary reflection from the baffle plate 50, and the through holes 72a, 72b, and 72c further suppress the decrease in exhaust conductance. In other words, it is possible to suppress the arrival of particles generated by the partition member (baffle plate 50) on the substrate W while further suppressing the decrease in exhaust characteristics.

[0056] [Difference 3] Figure 14 shows an example of the arrangement of plate-like members and through holes in Modification 3. Modification 3 in Figure 14 describes the case in which a first plate-like member 61c without a through hole is combined with a second plate-like member 62d having an inclined through hole in the second plate-like member 62.

[0057] First, we will explain how to determine the angle of the through-hole provided in the second plate-shaped member 62d. In modified example 3, particles that pass through the through-hole in the second plate-shaped member 62d are trapped by the shower head 13. Note that particles that pass through the through-hole in the second plate-shaped member 62d are particles that have already been reflected at least once. In this case, the direction of the through-hole faces the substrate support part 11, so the angle of the through-hole is set to an angle greater than or equal to the limit hole angle θh2. Next, we determine the required maximum shielding angle θm, which is the angle of the line connecting the position of the through-hole in the second plate-shaped member 62d and the upper end portion 50a of the baffle plate 50. For the through-hole 72d, the angle of the line 81d connecting the position of the through-hole 72d and the upper end portion 50a of the baffle plate 50 is set as the required maximum shielding angle θm, and the angle is set to be greater than or equal to the limit hole angle θh2 calculated based on the above formula (2). Similarly, for the through-hole 72e, the angle of the line 81e connecting the position of the through-hole 72e and the upper end portion 50a of the baffle plate 50 is set as the required maximum shielding angle θm, and the angle is set to be greater than or equal to the limit hole angle θh2 calculated based on the above equation (2). At this time, the limit hole angle θh2 can be adjusted by adjusting the diameter d of the through-holes 72d and 72e. Alternatively, the thickness t of the second plate-like member 62d may be adjusted. Note that multiple through-holes 72d and 72e are provided in the circumferential direction of the second plate-like member 62d.

[0058] Particles passing between the first plate-like member 61c and the support member 51 enter the through holes 72d and 72e at an angle smaller than the required maximum shielding angle θm, so even if the through holes 72d and 72e are present, they are shielded by the second plate-like member 62d.

[0059] In modified example 3, the particle region 10s4 is the shaded area in Figure 14. That is, the particle region 10s4 is the area surrounded by the baffle plate 50 and the area where particles that have passed between the first plate-shaped member 61c and the support member 51 arrive. The particles that have passed between the first plate-shaped member 61c and the support member 51 are shielded by the second plate-shaped member 62d and the shield member 111c. This prevents particles that would otherwise land on the substrate W either directly or by primary reflection from the baffle plate 50, and the through holes 72d and 72e suppress the decrease in exhaust conductance. In other words, it is possible to suppress the arrival of particles generated by the partition member (baffle plate 50) on the substrate W while suppressing the decrease in exhaust characteristics.

[0060] [Differentiation Example 4] Figure 15 shows an example of a combination of plate-like members and through-holes in Modification 4. In Modification 4 of Figure 15, a first plate-like member 61a, which has a through-hole in the first plate-like member 61, is combined with a second plate-like member 62c, which has an inclined through-hole and a vertical through-hole in the second plate-like member 62. In other words, Modification 4 is a combination of the above-described embodiment and Modification 2.

[0061] The method for determining the angle of the through-holes in the first plate-shaped member 61a is the same as in the embodiment, so the explanation is omitted. Similarly, the method for determining the angle of the through-holes in the second plate-shaped member 62c is the same as in Modification 2, so the explanation is omitted. Particles passing through the through-holes 71b and 71c of the first plate-shaped member 61a are shielded by the side walls of the shield member 111c and the covering 112b. Furthermore, particles passing between the first plate-shaped member 61c and the support member 51 enter the through-holes 72a, 72b, and 72c at an angle larger than the required maximum shielding angle θm, so they are shielded by the second plate-shaped member 62c even if the through-holes 72a, 72b, and 72c are present. Note that when through-holes are provided in both the first plate-shaped member 61 and the second plate-shaped member 62, the diameter d of the through-holes may be the same, or one may be smaller and the other larger. In other words, if you make one diameter d smaller, you have more room to make the other diameter d larger.

[0062] In modified example 4, the particle region 10s4 is the shaded area in Figure 14. That is, the particle region 10s4 consists of the area surrounded by the baffle plate 50, the area where particles that have passed between the first plate-shaped member 61a and the support member 51 arrive, and the area where particles that have passed through the through holes 71b and 71c arrive. This makes it possible to block particles that land on the substrate W directly or by primary reflection from the baffle plate 50, and the reduction in exhaust conductance can be further suppressed by the through holes 71b, 71c, 72a, 72b, and 72c. In other words, it is possible to suppress the arrival of particles generated by the partition member (baffle plate 50) on the substrate W while further suppressing the reduction in exhaust characteristics.

[0063] [Difference 5] Figure 16 shows an example of a combination of plate-like members and through-holes in Modification 5. In Modification 5 of Figure 16, the case is described in which a first plate-like member 61b, which has an inclined through-hole and a vertical through-hole in the first plate-like member 61, is combined with a second plate-like member 62d, which has an inclined through-hole in the second plate-like member 62. In other words, Modification 5 is a combination of Modification 1 and Modification 3 described above.

[0064] The method for determining the angle of the through-holes in the first plate-shaped member 61b is the same as in Modification 1, so the explanation is omitted. Similarly, the method for determining the angle of the through-holes in the second plate-shaped member 62d is the same as in Modification 3, so the explanation is omitted. Particles passing through the through-holes 71d, 71e, and 71f of the first plate-shaped member 61b are blocked by the second plate-shaped member 62d. Furthermore, particles passing between the first plate-shaped member 61b and the support member 51 enter the through-holes 72d and 72e at an angle smaller than the required maximum shielding angle θm, so they are shielded by the second plate-shaped member 62d even if the through-holes 72d and 72e are present.

[0065] In modified example 5, the particle region 10s4 is the shaded area in Figure 16. That is, the particle region 10s4 consists of the area surrounded by the baffle plate 50, the area where particles that have passed between the first plate-shaped member 61b and the support member 51 arrive, and the area where particles that have passed through the through holes 71d, 71e, and 71f arrive. Particles that have passed between the first plate-shaped member 61b and the support member 51 are shielded by the second plate-shaped member 62d and the shield member 111c. This prevents particles from landing on the substrate W directly or by primary reflection from the baffle plate 50, and the through holes 71d, 71e, 71f, 72d, and 72e further suppress the decrease in exhaust conductance. In other words, it is possible to suppress the arrival of particles generated by the partition member (baffle plate 50) on the substrate W while further suppressing the decrease in exhaust characteristics.

[0066] [Modification 6] Figure 17 shows an example of a combination of plate-like members and through-holes in Modification 6. In Modification 6 of Figure 17, a first plate-like member 61a, which has a through-hole in the first plate-like member 61, is combined with a second plate-like member 62e, which has a through-hole with different orientations and a vertical through-hole in the second plate-like member 62. In other words, Modification 6 is a combination of the above-described embodiment, Modification 2, and Modification 3.

[0067] The method for determining the angle of the through-holes in the first plate-shaped member 61a is the same as in the embodiment, so the explanation is omitted. Similarly, the method for determining the angle of the through-holes in the second plate-shaped member 62e is the same as in modified examples 2 and 3, so the explanation is omitted. Particles passing through the through-holes 71b and 71c of the first plate-shaped member 61a are shielded by the side walls of the shield member 111c and the covering 112b. Furthermore, particles passing between the first plate-shaped member 61a and the support member 51 enter the through-holes 72a, 72c, and 72e at an angle greater than or less than the required maximum shielding angle θm, so even if there are through-holes 72a, 72c, and 72e, they are shielded by the second plate-shaped member 62e.

[0068] In modified example 6, the particle region 10s4 is the shaded area in Figure 17. That is, the particle region 10s4 consists of the area surrounded by the baffle plate 50, the area where particles that have passed between the first plate-shaped member 61a and the support member 51 arrive, and the area where particles that have passed through the through holes 71b and 71c arrive. Particles that have passed between the first plate-shaped member 61a and the support member 51 are shielded by the second plate-shaped member 62e and the shield member 111c. This prevents particles from landing on the substrate W directly or by primary reflection from the baffle plate 50, and the through holes 71b, 71c, 72a, 72c, and 72e further suppress the decrease in exhaust conductance. In other words, it is possible to suppress the arrival of particles generated by the partition member (baffle plate 50) on the substrate W while further suppressing the decrease in exhaust characteristics.

[0069] [Difference 7] Figure 18 shows an example of a combination of plate-like members and through-holes in Modification 7. In Modification 7 of Figure 18, a first plate-like member 61e is provided with through-holes having different orientations and vertical through-holes, and a second plate-like member 62d is provided with inclined through-holes in the second plate-like member 62 is described. In other words, Modification 7 is a combination of the above-described embodiment, Modification 1, and Modification 3.

[0070] The method for determining the angle of the through-hole provided in the first plate-shaped member 61e is the same as in the embodiment and modification 1, so the explanation is omitted. Similarly, the method for determining the angle of the through-hole provided in the second plate-shaped member 62d is the same as in modification 3, so the explanation is omitted. Particles passing through the through-hole 71c of the first plate-shaped member 61e are shielded by the side walls of the shield member 111c and the covering 112b. Particles passing through the through-holes 71e and 71f of the first plate-shaped member 61e are shielded by the second plate-shaped member 62d. Furthermore, particles passing between the first plate-shaped member 61e and the support member 51 enter the through-holes 72d and 72e at an angle smaller than the required maximum shielding angle θm, so they are shielded by the second plate-shaped member 62d even if the through-holes 72d and 72e are present.

[0071] In modified example 7, the particle region 10s4 is the shaded area in Figure 18. That is, the particle region 10s4 consists of the area surrounded by the baffle plate 50, the area where particles that have passed between the first plate-shaped member 61e and the support member 51 arrive, and the area where particles that have passed through the through holes 71c and 71e arrive. Particles that have passed between the first plate-shaped member 61e and the support member 51 are shielded by the second plate-shaped member 62d and the shield member 111c. This prevents particles from landing on the substrate W directly or by primary reflection from the baffle plate 50, and the through holes 71c, 71e, 71f, 72d, and 72e further suppress the decrease in exhaust conductance. In other words, it is possible to suppress the arrival of particles generated by the partition member (baffle plate 50) on the substrate W while further suppressing the decrease in exhaust characteristics.

[0072] [Differentiation 8] Figure 19 shows an example of the arrangement of plate-like members and through holes in Modification 8. Modification 8 in Figure 19 describes the case in which a first plate-like member 61f, which has a through hole perpendicular to the first plate-like member 61, and a second plate-like member 62f, which has a through hole perpendicular to the second plate-like member 62, are combined. In other words, Modification 8 is a combination of the through hole 71f from Modification 1 described above and the through hole 72c from Modification 2.

[0073] In modified example 8, the through-holes 71f of the first plate-shaped member 61f and the through-holes 72c of the second plate-shaped member 62f are provided in multiple locations in the radial and circumferential directions of the first plate-shaped member 61f and the second plate-shaped member 62f so that they do not overlap when viewed from a vertical direction (plan view). In other words, the flight path 82 of particles that pass through the through-hole 71f is shielded at locations other than the through-hole 72c of the second plate-shaped member 62f. Furthermore, particles that pass through the through-hole 71f at an angle smaller or larger than the required maximum shielding angle θm at the through-hole 72c are shielded by the second plate-shaped member 62f even if the through-hole 72c is present.

[0074] In the modified example 8, the particle region 10s4 is the shaded area in Figure 19. That is, the particle region 10s4 consists of the area surrounded by the baffle plate 50, the area where particles that have passed between the first plate-shaped member 61f and the support member 51 arrive, and the area where particles that have passed through the through-hole 71f arrive. Particles that have passed between the first plate-shaped member 61f and the support member 51 are shielded by the second plate-shaped member 62f and the shield member 111c. This prevents particles from landing on the substrate W directly or by primary reflection from the baffle plate 50, and the through-holes 71f and 72c further suppress the decrease in exhaust conductance. In other words, it is possible to suppress the arrival of particles generated by the partition member (baffle plate 50) on the substrate W while further suppressing the decrease in exhaust characteristics.

[0075] [Modification 9] Figure 20 shows an example of a combination of plate-like members and through-holes in Modification 9. Modification 9 in Figure 20 describes a case in which a first plate-like member 61g, which has inclined through-holes and vertical through-holes in the first plate-like member 61, is combined with a second plate-like member 62g, which has vertical through-holes in the second plate-like member 62. In other words, Modification 9 is a combination of the above embodiment, a part of the through-holes 71f in Modification 1, and a part of the through-holes 72c in Modification 2.

[0076] The method for determining the angle of the inclined through-holes provided in the first plate-like member 61g is the same as in the embodiment, so the explanation is omitted. Particles that pass through the through-holes 71b and 71c of the first plate-like member 61g are shielded by the side walls of the shield member 111c and the covering 112b.

[0077] Figure 21 shows an example of the arrangement of through holes in Modified Example 9 when viewed from the vertical direction. In Figure 21, the overlapping portion of the first plate-like member 61g and the second plate-like member 62g is shown shifted vertically. As shown in Figure 21, in Modified Example 9, the upper openings and through holes 71f of the first plate-like member 61g and the through hole 72c of the second plate-like member 62g are provided in multiple circumferential directions of the first plate-like member 61g and the second plate-like member 62g so that they do not overlap in a plan view. In addition, multiple through holes 72c are also provided in the radial direction of the second plate-like member 62g. By providing through holes 71b, 71c, 71f and 72c of 5 mm in diameter in the first plate-like member 61g and the second plate-like member 62g, the conductance can be increased by, for example, 1.6 to 1.7 times compared to when there are no through holes.

[0078] In modified example 9, particles that pass through the through-hole 71f are shielded at locations other than the through-hole 72c in the second plate-like member 62g. Furthermore, particles that pass through the through-hole 71f at an angle greater than the required maximum shielding angle θm at the through-hole 72c are shielded by the second plate-like member 62g even if the through-hole 72c is present.

[0079] In modified example 9, the particle region 10s4 is the shaded area in Figure 20. That is, the particle region 10s4 consists of the area surrounded by the baffle plate 50, the area where particles that have passed between the first plate-shaped member 61g and the support member 51 arrive, and the area where particles that have passed through the through holes 71b, 71c, and 71f arrive. Particles that have passed between the first plate-shaped member 61g and the support member 51 are shielded by the second plate-shaped member 62g and the shield member 111c. This prevents particles from landing on the substrate W directly or by primary reflection from the baffle plate 50, and the through holes 71b, 71c, 71f, and 72c further suppress the decrease in exhaust conductance. In other words, it is possible to suppress the arrival of particles generated by the partition member (baffle plate 50) on the substrate W while further suppressing the decrease in exhaust characteristics.

[0080] In the embodiments and modifications described above, a first plate-like member 61 and a second plate-like member 62 were used as plate-like members, but the invention is not limited to these. For example, if the amount of particles in the region 10s1 shown in Figure 3 can be kept to an acceptable level, only one plate-like member may be used. This can further suppress the deterioration of exhaust characteristics compared to the case where two plate-like members are provided. Also, when using only one plate-like member, the gap between the substrate support portion 11 and the side wall 10a may be eliminated. Furthermore, there may be three or more plate-like members. This can suppress the arrival of particles on the substrate W due to two or more reflections.

[0081] As described above, according to this embodiment, the substrate processing apparatus (plasma processing apparatus 1) includes a chamber (plasma processing chamber 10) with an exhaust port (gas outlet 10e) at its bottom, a substrate support portion 11 disposed within the chamber, a partition member (baffle plate 50) separating the substrate processing area (plasma processing space 10s) from the exhaust area connected to the exhaust port, and one or more plate-shaped members (first plate-shaped members 61) provided upstream of the partition member with respect to the flow of exhaust to the exhaust port, blocking particles from the partition member. At least one of the one or more plate-shaped members has a through hole through which exhaust to the exhaust port can pass, and the through hole opens toward the side of the substrate support portion or toward the inner surface of the chamber. As a result, it is possible to suppress the arrival of particles generated by the partition member onto the substrate W while suppressing a decrease in exhaust characteristics.

[0082] Furthermore, according to this embodiment, the chamber has an exhaust port located at a position lower than the support surface (central region 111a) around the substrate support portion 11 on which the substrate W is supported, the partition member is positioned around the substrate support portion 11 upstream of the exhaust port with respect to the flow of exhaust gas to the exhaust port, and one or more plate-shaped members are positioned around the substrate support portion 11 upstream of the partition member with respect to the flow of exhaust gas to the exhaust port. As a result, it is possible to suppress the arrival of particles generated by the partition member onto the substrate W while suppressing a decrease in exhaust performance.

[0083] Furthermore, according to this embodiment and modifications 4, 6, 7, and 9, the through holes (71b, 71c) are provided in at least one of the plate-shaped members so as to open toward the ring member (covering 112b) arranged around the substrate W. As a result, it is possible to suppress the flying of particles generated by the partition member toward the substrate W while further suppressing the deterioration of exhaust characteristics.

[0084] Furthermore, according to this embodiment and modifications 4, 6, 7, and 9, one or more plate-shaped members include a first plate-shaped member (61a, 61e, 61g) provided around the substrate support 11, upstream of the partition member with respect to the exhaust flow to the exhaust port, and a second plate-shaped member (62a, 62c, 62d, 62e, 62g) provided upstream of the first plate-shaped member, and through holes (71b, 71c) are provided in the first plate-shaped member so as to open toward the ring member. As a result, it is possible to suppress the arrival of particles generated by the partition member onto the substrate W while suppressing a decrease in exhaust characteristics.

[0085] Furthermore, according to modifications 1, 5, and 7, one or more plate-shaped members include a first plate-shaped member (61b, 61e) located around the substrate support 11, upstream of the partition member with respect to the exhaust flow to the exhaust port, and a second plate-shaped member (62a, 62d) located upstream of the first plate-shaped member, with through holes (71d, 71e) provided in the first plate-shaped member so as to open toward the second plate-shaped member. As a result, particles generated in the partition member can be directed away from the substrate W.

[0086] Furthermore, according to modified examples 5 and 7, through holes are provided in the first plate-shaped members (61b, 61e) so as to open toward the second plate-shaped member 62d (through holes 71d, 71e), and also in the second plate-shaped member 62d so as to open toward other members (shower head 13) located in the substrate processing area (through holes 72d, 72e). As a result, particles generated in the partition member can be reflected multiple times by members in the plasma processing chamber 10, thereby reducing their flight speed.

[0087] Furthermore, according to modified examples 1, 5, and 7, the through holes (71d, 71e) provided in the first plate-like members (61b, 61e) include first through holes (71d, 71e) having an inclination of θm1 or less based on the angle θh1 formed by the line (80d, 80e) connecting the end portion 62b of the second plate-like member (62a, 62d) and the position of the through hole in the first plate-like member, the thickness of the first plate-like member, and the diameter of the through hole. As a result, particles passing through the first through holes can be shielded by the second plate-like member.

[0088] Furthermore, according to modified examples 1, 5, and 7, the angle θh1 is calculated using the following equation (3) [wherein t is the thickness of the first plate-like member (61b, 61e), d is the diameter of the through-hole (71d, 71e), and θm1 is the angle that the line (80d, 80e) connecting the end of the second plate-like member (62a, 62d) and the position of the through-hole in the first plate-like member makes with the first plate-like member.]. As a result, particles that have passed through the first through-hole can be shielded by the second plate-like member.

[0089]

number

[0090] Furthermore, according to this embodiment and modifications 4, 6, 7, and 9, the through holes (71b, 71c) provided in the first plate-like members (61a, 61e, 61g) include second through holes (71b, 71c) having an inclination of θh2 or more based on the angle θm2 formed by the line (80b, 80c) connecting the upper end portion 112c of the side surface of the substrate support portion 11 and the position of the through hole in the first plate-like member, the thickness of the first plate-like member, and the diameter of the through hole. As a result, particles that have passed through the second through holes can be shielded by the side surface of the substrate support portion 11.

[0091] Furthermore, according to this embodiment and modified examples 4, 6, 7, and 9, the angle θh2 is calculated by the following equation (4) [wherein t is the thickness of the first plate-like member (61a, 61e, 61g), d is the diameter of the through-hole (71b, 71c), and θm2 is the angle that the line (80b, 80c) connecting the upper end 112c of the side surface of the substrate support 11 and the position of the through-hole in the first plate-like member makes with the first plate-like member.]

[0092]

number

[0093] Furthermore, according to modifications 1, 2, 4 to 9, the through-holes include third through-holes (71f, 72c) that open perpendicular to the planar direction of one or more plate-shaped members. As a result, it is possible to suppress the arrival of particles generated by the partition member onto the substrate W while further suppressing the deterioration of exhaust characteristics.

[0094] Furthermore, according to modifications 4 to 7, the through holes (71b, 71c, 72d, 72e) are positioned so as not to overlap with each other in a plan view of the first plate-like member (61a, 61b, 61e) and the second plate-like member (62c, 62d, 62e). As a result, it is possible to prevent particles that have passed through the through holes of the first plate-like member from passing through the through holes of the second plate-like member.

[0095] The embodiments and variations disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments and variations described herein may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

[0096] Furthermore, although the embodiments and modifications described above have described circular through-holes in the first plate-shaped member 61 and the second plate-shaped member 62, the invention is not limited to these. For example, through-holes with a square or triangular cross-section may be used. Moreover, the through-hole may be tapered so that the lower part widens.

[0097] Furthermore, this disclosure can also be structured as follows: (1) A chamber equipped with an exhaust port at the bottom, A substrate support portion arranged within the chamber, A partition member that separates the substrate processing area from the exhaust area connected to the exhaust port, One or more plate-shaped members are provided upstream of the partition member with respect to the exhaust flow to the exhaust port, and block particles from the partition member. It has, At least one of the one or more plate-shaped members has a through-hole through which exhaust gas to the exhaust port can pass, and the through-hole opens toward the side of the substrate support or toward the inner surface of the chamber. Circuit board processing equipment. (2) The chamber is provided with the exhaust port located around the substrate support portion, at a position lower than the support surface on which the substrate of the substrate support portion is supported. The partition member is positioned around the substrate support portion, upstream of the exhaust port with respect to the flow of exhaust gas to the exhaust port. The one or more plate-shaped members are positioned around the substrate support portion, upstream of the partition member with respect to the exhaust flow to the exhaust port. The substrate processing apparatus described in (1) above. (3) The through-hole is provided in at least one of the one or more plate-shaped members so as to open toward a ring member arranged around the substrate. The substrate processing apparatus described in (2) above. (4) The one or more plate-shaped members include a first plate-shaped member provided around the substrate support portion, upstream of the partition member with respect to the exhaust flow to the exhaust port, and a second plate-shaped member provided upstream of the first plate-shaped member. The through hole is provided in the first plate-shaped member so as to open toward the ring member. The substrate processing apparatus described in (3) above. (5) The one or more plate-shaped members include a first plate-shaped member provided around the substrate support portion, upstream of the partition member with respect to the exhaust flow to the exhaust port, and a second plate-shaped member provided upstream of the first plate-shaped member. The through hole is provided in the first plate-shaped member so as to open toward the second plate-shaped member. A substrate processing apparatus according to any one of (2) to (4) above. (6) The through-hole is provided in the first plate-shaped member so as to open toward the second plate-shaped member, and is also provided in the second plate-shaped member so as to open toward other members located in the substrate processing area. The substrate processing apparatus described in (5) above. (7) The through-hole provided in the first plate-like member includes a first through-hole having an inclination of less than or equal to the angle θm1 formed between the line connecting the end of the second plate-like member and the position of the through-hole in the first plate-like member, the thickness of the first plate-like member, and the diameter of the through-hole. The substrate processing apparatus described in (5) above. (8) The angle θh1 is calculated using equation (3) [wherein t is the thickness of the first plate-like member, d is the diameter of the through hole, and θm1 is the angle formed between the line connecting the end of the second plate-like member and the position of the through hole in the first plate-like member and the first plate-like member.] The substrate processing apparatus described in (7) above.

number

number

[0098] 1. Plasma processing equipment 10 Plasma processing chamber 10e Gas outlet 10s Plasma Processing Space 11. Substrate support section 13 Shower head 50 Baffle Plate 61, 61a, 61b, 61e, 61g First plate-shaped member 62, 62a, 62c, 62d, 62e, 62g Second plate-shaped member 62b end 71b,71c,71d,71e,71f,72c,72d,72e Through hole 80b,80c,80d,80e line 111a Central area 112b Covering 112c Upper end W board

Claims

1. A chamber equipped with an exhaust port at the bottom, A substrate support portion arranged within the chamber, A partition member that separates the substrate processing area from the exhaust area connected to the exhaust port, and is provided with an exhaust through-hole that connects the substrate processing area and the exhaust area, One or more plate-shaped members are provided upstream of the partition member with respect to the exhaust flow to the exhaust port, and block particles from the partition member. It has, The one or more plate-shaped members include a first plate-shaped member provided around the substrate support portion, upstream of the partition member with respect to the exhaust flow to the exhaust port, and a second plate-shaped member provided upstream of the first plate-shaped member. The first plate-shaped member is arranged such that its base is connected to the substrate support side and its end has a gap between it and the side wall side of the chamber. The second plate-shaped member is arranged such that its base is connected to the side wall of the chamber and its end has a gap between it and the substrate support portion. The arrangement of the first plate-shaped member and the second plate-shaped member is such that they overlap in the vertical direction of the chamber. Of the first plate-shaped member and the second plate-shaped member, at least one plate-shaped member has a through-hole through which exhaust gas to the exhaust port can pass, and the through-hole opens toward the side of the substrate support portion or toward the inner surface of the chamber. The through-hole provided in the first plate-like member so as to open toward the second plate-like member includes a first through-hole having an inclination of less than or equal to an angle θh1 calculated by formula (1) based on the angle θm1 made between the line connecting the end of the second plate-like member and the position of the through-hole in the first plate-like member, the thickness t of the first plate-like member, and the diameter d of the through-hole. Circuit board processing equipment. [Math 1]

2. A chamber having an exhaust port at the bottom, A substrate support portion arranged within the chamber, A partition member that separates the substrate processing area from the exhaust area connected to the exhaust port, and is provided with an exhaust through-hole that connects the substrate processing area and the exhaust area, One or more plate-shaped members are provided upstream of the partition member with respect to the exhaust flow to the exhaust port, and block particles from the partition member. It has, The one or more plate-shaped members include a first plate-shaped member provided around the substrate support portion, upstream of the partition member with respect to the exhaust flow to the exhaust port, and a second plate-shaped member provided upstream of the first plate-shaped member. The first plate-shaped member is arranged such that its base is connected to the substrate support side and its end has a gap between it and the side wall side of the chamber. The second plate-shaped member is arranged such that its base is connected to the side wall of the chamber and its end has a gap between it and the substrate support portion. The arrangement of the first plate-shaped member and the second plate-shaped member is such that they overlap in the vertical direction of the chamber. Of the first plate-shaped member and the second plate-shaped member, at least one plate-shaped member has a through-hole through which exhaust gas to the exhaust port can pass, and the through-hole opens toward the side of the substrate support portion or toward the inner surface of the chamber. The through-hole provided in the first plate-shaped member so as to open toward a ring member arranged around the substrate supported by the substrate support portion includes a second through-hole having an inclination of an angle θh2 or greater calculated by formula (2) based on the angle θm2 made between the line connecting the upper end of the side surface of the substrate support portion and the position of the through-hole in the first plate-shaped member, the thickness t of the first plate-shaped member, and the diameter d of the through-hole. Circuit board processing equipment. [Math 2]

3. A chamber having an exhaust port at the bottom, A substrate support portion arranged within the chamber, A partition member that separates the substrate processing area from the exhaust area connected to the exhaust port, and is provided with an exhaust through-hole that connects the substrate processing area and the exhaust area, One or more plate-shaped members are provided upstream of the partition member with respect to the exhaust flow to the exhaust port, and block particles from the partition member. It has, The one or more plate-shaped members include a first plate-shaped member provided around the substrate support portion, upstream of the partition member with respect to the exhaust flow to the exhaust port, and a second plate-shaped member provided upstream of the first plate-shaped member. The first plate-shaped member is arranged such that its base is connected to the substrate support side and its end has a gap between it and the side wall side of the chamber. The second plate-shaped member is arranged such that its base is connected to the side wall of the chamber and its end has a gap between it and the substrate support portion. The arrangement of the first plate-shaped member and the second plate-shaped member is such that they overlap in the vertical direction of the chamber. Of the first plate-shaped member and the second plate-shaped member, at least one plate-shaped member has a through-hole through which exhaust gas to the exhaust port can pass, and the through-hole opens toward the side of the substrate support portion or toward the inner surface of the chamber. The through-hole includes a third through-hole that opens perpendicular to the planar direction of the at least one plate-like member. Circuit board processing equipment.

4. The chamber is provided with the exhaust port located around the substrate support portion, at a position lower than the support surface on which the substrate of the substrate support portion is supported. The partition member is positioned around the substrate support portion, upstream of the exhaust port with respect to the flow of exhaust gas to the exhaust port. A substrate processing apparatus according to any one of claims 1 to 3.

5. The through-hole is provided in at least one of the first plate-shaped member and the second plate-shaped member so as to open toward a ring member arranged around the substrate supported by the substrate support portion. A substrate processing apparatus according to any one of claims 1 to 3.

6. The through-hole is provided in the first plate-shaped member so as to open toward the second plate-shaped member, and is also provided in the second plate-shaped member so as to open toward a shower head located at the top of the chamber in the substrate processing area. A substrate processing apparatus according to any one of claims 1 to 3.

7. The through-holes are positioned so as not to overlap each other in a plan view of the first plate-shaped member and the second plate-shaped member. A substrate processing apparatus according to any one of claims 1 to 3.

Images