Processing fluid supply device and processing fluid supply method

Abstract

A processing fluid supply apparatus (70) according to one aspect of the present disclosure is provided with a supply line (61), a cooling unit, a pump (75), a return line (90), a heating unit, and a flow volume adjustment mechanism. The supply line (61) supplies a processing fluid from a processing fluid supply source (60) to a substrate processing apparatus (1), the processing fluid supply source (60) supplying the processing fluid in gaseous state. The cooling unit is provided in the supply line (61), and generates a processing fluid in liquid state by cooling the processing fluid in gaseous state. The pump (75) is provided downstream of the cooling unit in the supply line (61). The return line (90), which is branched from a branch portion (76) positioned downstream of the pump (75) in the supply line (61), returns the processing fluid to a converging portion (71) positioned upstream of the cooling unit in the supply line (61). The heating unit is provided in the return line (90) to heat the processing fluid. The flow volume adjustment mechanism adjusts the flow volume of the processing fluid supplied to the heating unit.

Description

Technical Field

[0004]

[0001] The disclosed embodiments relate to a processing fluid supply device and a processing fluid supply method.

Background Art

[0002] Conventionally, a substrate processing apparatus is known that forms a liquid film for preventing drying on the surface of a semiconductor wafer (hereinafter referred to as a wafer) as a substrate, and performs a drying process by bringing the wafer on which such a liquid film is formed into contact with a processing fluid in a supercritical state. Also, a processing fluid supply device for supplying a processing fluid to such a substrate processing apparatus is known (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of improving the filtration performance of a processing fluid in a processing fluid supply device that supplies a processing fluid to a substrate processing apparatus.

Means for Solving the Problems

[0005] A processing fluid supply device according to one aspect of the present disclosure comprises a supply line, a cooling unit, a pump, a return line, a heating unit, and a flow rate adjustment mechanism. The supply line supplies the processing fluid from a processing fluid supply source that supplies the processing fluid in a gaseous state to a substrate processing device. The cooling unit is provided in the supply line and cools the processing fluid in a gaseous state to produce the processing fluid in a liquid state. The pump is provided downstream of the cooling unit in the supply line. The return line branches off from a branch located downstream of the pump in the supply line and returns the processing fluid to a confluence located upstream of the cooling unit in the supply line. The heating unit is provided in the return line and heats the processing fluid. The flow rate adjustment mechanism adjusts the flow rate of the processing fluid supplied to the heating unit. [Effects of the Invention]

[0006] According to this disclosure, in a processing fluid supply device that supplies processing fluid to a substrate processing device, the filtration performance of the processing fluid can be improved. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 shows an example of the configuration of a substrate processing apparatus according to an embodiment. [Figure 2] Figure 2 shows an example of the configuration of a liquid processing unit according to an embodiment. [Figure 3] Figure 3 is a schematic perspective view showing an example of the configuration of a drying unit according to the embodiment. [Figure 4] Figure 4 shows an example of the overall system configuration of the substrate processing system according to the embodiment. [Figure 5] Figure 5 shows an example of the piping configuration of the supply unit and drying unit according to the embodiment. [Figure 6] Figure 6 shows an example of the piping configuration of a processing fluid supply device according to the present invention. [Figure 7] Figure 7 shows an example of the piping configuration of a processing fluid supply device according to a modified example 1 of the embodiment. [Figure 8]Figure 8 shows an example of the heater configuration according to modified embodiment 1. [Figure 9] Figure 9 is a cross-sectional view taken along the line AA shown in Figure 8. [Figure 10] Figure 10 shows an example of the piping configuration of a processing fluid supply device according to a modified example 2 of the embodiment. [Figure 11] Figure 11 shows an example of the piping configuration of a processing fluid supply device according to a modified example of the embodiment 3. [Figure 12] Figure 12 shows an example of the piping configuration of a processing fluid supply device according to a modified example 4 of the embodiment. [Modes for carrying out the invention]

[0008] The embodiments of the processing fluid supply device and processing fluid supply method disclosed herein will be described in detail below with reference to the attached drawings. However, the embodiments described below do not limit this disclosure. Furthermore, it should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from reality. Moreover, there may be differences in dimensional relationships and ratios between different parts of the drawings.

[0009] Conventionally, there are known substrate processing devices that form a liquid film to prevent drying on the surface of a substrate such as a semiconductor wafer (hereinafter referred to as a wafer), and then bring the wafer on which the liquid film has been formed into contact with a processing fluid in a supercritical state to perform a drying process.

[0010] In such a substrate processing apparatus, the processing fluid supply device has piping arranged in series from the processing fluid supply source to the substrate processing apparatus. Therefore, even if one attempts to filter out foreign matter in the processing fluid with a filter, there is a limit to the number of times it can be filtered.

[0011] Therefore, by forming a return line within the processing fluid supply device that returns the processing fluid from the downstream side to the upstream side, and circulating the processing fluid within the processing fluid supply device, the number of times it can be filtered can be increased, thereby improving the performance in removing foreign matter.

[0012] At this time, on the downstream side, the liquid-state processing fluid is heated by a heater in the return line to change the processing fluid into a gaseous state, and the gaseous-state processing fluid is filtered by a gas filter.

[0013] However, when the pressure of the processing fluid suddenly rises in the processing fluid supply device, the processing fluid returned from the return line to the upstream side is not sufficiently heated. As a result, when the processing fluid in a gas-liquid mixed state passes through the gas filter, the filtering performance of the processing fluid may deteriorate.

[0014] Therefore, in a processing fluid supply device that supplies a processing fluid to a substrate processing device and solves the above problems, the realization of a technology capable of improving the filtering performance of the processing fluid is expected.

[0015] <Configuration of Substrate Processing Apparatus> First, the configuration of the substrate processing apparatus 1 according to the embodiment will be described with reference to FIG. 1. FIG. 1 is a diagram showing a configuration example of the substrate processing apparatus 1 according to the embodiment. In the following, in order to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

[0016] As shown in FIG. 1, the substrate processing apparatus 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0017] The loading / unloading station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C for horizontally accommodating a plurality of semiconductor wafers W (hereinafter referred to as "wafers W") are placed on the carrier placement unit 11.

[0018] The transfer unit 12 is provided adjacent to the carrier placement unit 11. Inside the transfer unit 12, a transfer device 13 and a delivery unit 14 are arranged.

[0019] The transport device 13 includes a wafer holding mechanism for holding the wafer W. The transport device 13 is also capable of moving horizontally and vertically, as well as rotating about the vertical axis, and uses the wafer holding mechanism to transport the wafer W between the carrier C and the transfer unit 14.

[0020] The processing station 3 is located adjacent to the transport unit 12. The processing station 3 comprises a transport block 4 and a plurality of processing blocks 5.

[0021] The transport block 4 comprises a transport area 15 and a transport device 16. The transport area 15 is, for example, a rectangular parallelepiped region extending along the direction of alignment (X-axis direction) of the loading / unloading station 2 and the processing station 3. The transport device 16 is arranged in the transport area 15.

[0022] The transport device 16 is equipped with a wafer holding mechanism for holding wafers W. The transport device 16 is also capable of moving horizontally and vertically, as well as rotating about a vertical axis, and uses the wafer holding mechanism to transport wafers W between the transfer unit 14 and the multiple processing blocks 5.

[0023] Multiple processing blocks 5 are arranged adjacent to the transport area 15 on both sides of the transport area 15. Specifically, the multiple processing blocks 5 are arranged on one side (positive Y-axis side) and the other side (negative Y-axis side) of the transport area 15 in a direction (Y-axis direction) perpendicular to the direction (X-axis direction) in which the loading / unloading stations 2 and processing stations 3 are aligned.

[0024] Although not shown in the diagram, the multiple processing blocks 5 are arranged in multiple stages (for example, three stages) along the vertical direction. The wafer W is transported between the processing blocks 5 located in each stage and the transfer unit 14 by a single transport device 16 located in the transport block 4. Note that the number of stages of the multiple processing blocks 5 is not limited to three.

[0025] Each processing block 5 comprises a liquid processing unit 17, a drying unit 18, and a supply unit 19. The drying unit 18 is an example of a substrate processing unit.

[0026] The liquid treatment unit 17 performs a cleaning process to clean the upper surface of the wafer W, which is the pattern formation surface. The liquid treatment unit 17 also performs a liquid film formation process to form a liquid film on the upper surface of the wafer W after the cleaning process. The configuration of the liquid treatment unit 17 will be described later.

[0027] The drying unit 18 performs supercritical drying on the wafer W after the liquid film formation treatment. Specifically, the drying unit 18 dries the wafer W by bringing it into contact with a processing fluid in a supercritical state (hereinafter also referred to as "supercritical fluid"). The configuration of the drying unit 18 will be described later.

[0028] The supply unit 19 supplies the processing fluid to the drying unit 18. Specifically, the supply unit 19 comprises a group of supply equipment including a flow meter, flow regulator, back pressure valve, heater, etc., and a housing that accommodates the group of supply equipment. In this embodiment, the supply unit 19 supplies CO2 as the processing fluid to the drying unit 18. The configuration of the supply unit 19 will be described later.

[0029] Furthermore, a processing fluid supply device 70 (see Figure 4) that supplies the processing fluid is connected to the supply unit 19. In this embodiment, the processing fluid supply device 70 supplies CO2 as the processing fluid to the supply unit 19. Details of this processing fluid supply device 70 will be described later.

[0030] The liquid processing unit 17, drying unit 18, and supply unit 19 are arranged along the transport area 15 (i.e., along the X-axis). Of the liquid processing unit 17, drying unit 18, and supply unit 19, the liquid processing unit 17 is positioned closest to the loading / unloading station 2, and the supply unit 19 is positioned furthest from the loading / unloading station 2.

[0031] Thus, each processing block 5 is equipped with one liquid processing unit 17, one drying unit 18, and one supply unit 19. In other words, the substrate processing apparatus 1 is provided with the same number of liquid processing units 17, drying units 18, and supply units 19.

[0032] Furthermore, the drying unit 18 includes a processing area 18a where supercritical drying is performed, and a transfer area 18b where wafers W are transferred between the transport block 4 and the processing area 18a. These processing area 18a and transfer area 18b are arranged along the transport area 15.

[0033] Specifically, of the processing area 18a and the transfer area 18b, the transfer area 18b is located closer to the liquid processing unit 17 than the processing area 18a. In other words, in each processing block 5, the liquid processing unit 17, the transfer area 18b, the processing area 18a, and the supply unit 19 are arranged in this order along the transport area 15.

[0034] As shown in Figure 1, the substrate processing apparatus 1 includes a control device 6. The control device 6 is, for example, a computer and comprises a control unit 7 and a storage unit 8.

[0035] The control unit 7 includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, and various circuits. The CPU of this microcomputer reads and executes programs stored in the ROM to control the transport devices 13 and 16, the liquid processing unit 17, the drying unit 18, and the supply unit 19, etc.

[0036] Such a program may have been stored on a computer-readable storage medium and installed from that storage medium to the storage unit 8 of the control device 6. Examples of computer-readable storage mediums include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0037] The memory unit 8 is implemented by, for example, semiconductor memory elements such as RAM and flash memory, or storage devices such as hard disks and optical discs.

[0038] In the substrate processing apparatus 1 configured as described above, first, the transport device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement section 11 and places the removed wafer W on the transfer section 14. The wafer W placed on the transfer section 14 is then taken out of the transfer section 14 by the transport device 16 of the processing station 3 and transported to the liquid processing unit 17.

[0039] The wafer W, which has been transported to the liquid processing unit 17, undergoes cleaning and liquid film formation processing in the liquid processing unit 17, and is then transported out of the liquid processing unit 17 by the transport device 16. The wafer W that has been transported out of the liquid processing unit 17 is then transported to the drying unit 18 by the transport device 16, where it undergoes drying processing.

[0040] The wafers W that have been dried by the drying unit 18 are removed from the drying unit 18 by the transport device 16 and placed on the transfer unit 14. The processed wafers W placed on the transfer unit 14 are then returned to the carrier C of the carrier placement unit 11 by the transport device 13.

[0041] <Configuration of the liquid treatment unit> Next, the configuration of the liquid treatment unit 17 will be explained with reference to Figure 2. Figure 2 is a diagram showing an example of the configuration of the liquid treatment unit 17. The liquid treatment unit 17 is configured as a single-wafer cleaning device that cleans wafers W one by one by spin cleaning.

[0042] As shown in Figure 2, the liquid processing unit 17 holds the wafer W almost horizontally in a wafer holding mechanism 25 located within the outer chamber 23 that forms the processing space, and rotates the wafer W by rotating this wafer holding mechanism 25 around a vertical axis.

[0043] The liquid treatment unit 17 then inserts a nozzle arm 26 above the rotating wafer W and supplies a chemical solution and a rinsing solution in a predetermined order from a chemical solution nozzle 26a provided at the tip of the nozzle arm 26, thereby performing a cleaning treatment on the upper surface of the wafer W.

[0044] Furthermore, the liquid treatment unit 17 also has a chemical supply passage 25a formed inside the wafer holding mechanism 25. The chemicals and rinsing liquid supplied from this chemical supply passage 25a also clean the underside of the wafer W.

[0045] The cleaning process begins with the removal of particles and organic contaminants using an alkaline chemical solution, SC1 solution (a mixture of ammonia and hydrogen peroxide). Next, rinsing is performed using a rinse solution, deionized water (DIW).

[0046] Next, the native oxide film is removed using a diluted hydrofluoric acid solution (DHF), which is an acidic chemical, followed by rinsing with DIW.

[0047] The various chemical solutions described above are collected in the outer chamber 23 and the inner cup 24 located inside the outer chamber 23, and discharged from the drain port 23a at the bottom of the outer chamber 23 and the drain port 24a at the bottom of the inner cup 24. Furthermore, the atmosphere inside the outer chamber 23 is exhausted from the exhaust port 23b at the bottom of the outer chamber 23.

[0048] The liquid film formation process is performed after the rinsing process in the cleaning process. Specifically, the liquid treatment unit 17 rotates the wafer holding mechanism 25 while supplying liquid IPA (Isopropyl Alcohol) (hereinafter also referred to as "IPA liquid") to the upper and lower surfaces of the wafer W. This replaces the DIW remaining on both sides of the wafer W with IPA. After that, the liquid treatment unit 17 slowly stops rotating the wafer holding mechanism 25.

[0049] After the liquid film formation process is complete, the wafer W, with the liquid film of IPA liquid still formed on its upper surface, is transferred to the transport device 16 by a transfer mechanism (not shown) provided in the wafer holding mechanism 25 and unloaded from the liquid processing unit 17.

[0050] The liquid film formed on the wafer W prevents the pattern from collapsing due to the evaporation (vaporization) of the liquid on the upper surface of the wafer W during transport of the wafer W from the liquid processing unit 17 to the drying unit 18, or during the loading operation into the drying unit 18.

[0051] <Drying unit configuration> Next, the configuration of the drying unit 18 will be explained with reference to Figure 3. Figure 3 is a schematic perspective view showing an example of the configuration of the drying unit 18.

[0052] The drying unit 18 comprises a main body 31, a holding plate 32, and a lid member 33. The housing-shaped main body 31 has an opening 34 for loading and unloading wafers W. The holding plate 32 holds the wafer W to be processed horizontally. The lid member 33 supports the holding plate 32 and seals the opening 34 when the wafer W is loaded into the main body 31.

[0053] The main body 31 is a container with a processing space formed inside that can accommodate, for example, a wafer W with a diameter of 300 mm, and its walls are provided with supply ports 35, 36 and a discharge port 37. The supply ports 35, 36 and the discharge port 37 are connected to supply channels and discharge channels for circulating supercritical fluid to the drying unit 18, respectively.

[0054] The supply port 35 is connected to the side of the housing-shaped main body 31 opposite to the opening 34. The supply port 36 is connected to the bottom surface of the main body 31. Furthermore, the discharge port 37 is connected to the lower side of the opening 34. Although Figure 3 shows two supply ports 35 and 36 and one discharge port 37, the number of supply ports 35 and 36 and the discharge port 37 are not particularly limited.

[0055] Furthermore, the main body 31 is provided with fluid supply headers 38 and 39 and a fluid discharge header 40. The fluid supply headers 38 and 39 have multiple supply ports arranged in the longitudinal direction of the fluid supply headers 38 and 39, and the fluid discharge header 40 has multiple discharge ports arranged in the longitudinal direction of the fluid discharge header 40.

[0056] The fluid supply header 38 is connected to the supply port 35 and is located inside the housing-shaped main body 31, adjacent to the side opposite to the opening 34. The multiple supply ports formed alongside the fluid supply header 38 face the opening 34.

[0057] The fluid supply header 39 is connected to the supply port 36 and is located in the center of the bottom surface inside the housing-shaped main body 31. The multiple supply ports formed alongside the fluid supply header 39 face upward.

[0058] The fluid discharge header 40 is connected to the discharge port 37 and is located inside the housing-shaped main body 31, adjacent to the side facing the opening 34 and below the opening 34. The multiple discharge ports formed alongside the fluid discharge header 40 face upward.

[0059] Fluid supply headers 38 and 39 supply supercritical fluid into the main body 31. Fluid discharge header 40 guides the supercritical fluid inside the main body 31 to the outside and discharges it. The supercritical fluid discharged to the outside of the main body 31 via the fluid discharge header 40 contains IPA liquid dissolved in the supercritical fluid from the surface of the wafer W.

[0060] Within the drying unit 18, the IPA liquid between the patterns formed on the wafer W comes into contact with the supercritical fluid under high pressure (e.g., 16 MPa), gradually dissolving into the supercritical fluid, and the spaces between the patterns are gradually replaced by the supercritical fluid. Ultimately, the spaces between the patterns are filled solely with the supercritical fluid.

[0061] Then, after the IPA liquid is removed from between the patterns, the pressure inside the main body 31 is reduced from a high-pressure state to atmospheric pressure, causing the CO2 to change from a supercritical state to a gaseous state, and the spaces between the patterns are filled only with gas. In this way, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0062] In this case, the supercritical fluid has lower viscosity than a liquid (e.g., IPA liquid), and also has a high ability to dissolve liquids. Furthermore, there is no interface between the supercritical fluid and the liquid or gas in equilibrium. As a result, in drying treatment using a supercritical fluid, the liquid can be dried without being affected by surface tension. Therefore, according to this embodiment, it is possible to suppress the collapse of the pattern during the drying treatment.

[0063] In this embodiment, an example is shown in which IPA liquid is used as the liquid to prevent drying and supercritical CO2 is used as the processing fluid. However, a liquid other than IPA may be used as the liquid to prevent drying, and a fluid other than supercritical CO2 may be used as the processing fluid.

[0064] <Configuration of the substrate processing system> Next, the configuration of the substrate processing system S according to the embodiment will be described with reference to Figures 4 to 6. Figure 4 is a diagram showing an example of the overall system configuration of the substrate processing system S according to the embodiment. Note that each part of the substrate processing system S shown below can be controlled by the control unit 7.

[0065] The substrate processing system S comprises a processing fluid supply source 60, a processing fluid supply device 70, and a substrate processing device 1. The processing fluid supply device 70 supplies the processing fluid supplied from the processing fluid supply source 60 to the substrate processing device 1.

[0066] As shown in Figure 4, the substrate processing apparatus 1 has a plurality of drying units 18 and a plurality of supply units 19, and processes the wafer W (see Figure 5) in the drying unit 18 with a processing fluid supplied via the corresponding supply unit 19.

[0067] A supply line 61 connects the processing fluid supply source 60 to the multiple drying units 18, and the processing fluid is supplied from the processing fluid supply source 60 to the multiple drying units 18 via this supply line 61.

[0068] The supply line 61 has a first supply line 62 and a plurality of second supply lines 63. The first supply line 62 supplies the processing fluid from the processing fluid supply source 60 to the processing fluid supply device 70. The first supply line 62 also branches into a plurality of second supply lines 63 within the processing fluid supply device 70. The second supply lines 63 supply the processing fluid to the drying unit 18 via the supply unit 19.

[0069] Figure 5 shows an example of the piping configuration of the supply unit 19 and drying unit 18 according to the embodiment. In the substrate processing apparatus 1, the processing fluid flowing through the second supply line 63 is supplied to the drying unit 18 and discharged to the outside from the drying unit 18 via the discharge line 50.

[0070] In the substrate processing apparatus 1, the second supply line 63 is equipped with, in order from upstream, a valve 41, a heater 42 and a temperature sensor 43, an orifice 44, a filter 45, and a valve 46. A branch line 47 that branches off from between the filter 45 and the valve 46 in the second supply line 63 is equipped with a valve 48.

[0071] Valve 41 is a valve that controls the on / off of the flow of the processing fluid. When open, it allows the processing fluid to flow to the downstream heater 42, and when closed, it does not allow the processing fluid to flow to the downstream heater 42.

[0072] The heater 42 heats the liquid processing fluid flowing through the second supply line 63 to generate a supercritical processing fluid. The temperature sensor 43 detects the temperature of the supercritical processing fluid generated by the heater 42.

[0073] The orifice 44 plays a role in reducing the flow velocity of the supercritical processing fluid generated by the heater 42 and regulating its pressure. The orifice 44 allows the supercritical processing fluid, whose pressure has been adjusted to, for example, about 16 MPa, to flow through the downstream second supply line 63.

[0074] The filter 45 filters the supercritical processing fluid flowing through the second supply line 63, removing foreign matter contained in the processing fluid. By removing foreign matter from the processing fluid with the filter 45, it is possible to suppress the generation of particles on the wafer W surface during the drying process of the wafer W using the supercritical fluid.

[0075] Valves 46 and 48 are valves that control the on and off of the flow of the processing fluid. When open, they allow the processing fluid to flow to the downstream drying unit 18, and when closed, they do not allow the processing fluid to flow to the downstream drying unit 18.

[0076] The drying unit 18 is equipped with a temperature sensor 49. This temperature sensor 49 detects the temperature of the processing fluid filled inside the drying unit 18.

[0077] The discharge line 50 is equipped with, in order from upstream, a pressure sensor 51, a valve 52, a flow meter 53, and a back pressure valve 54. The pressure sensor 51 measures the pressure of the processed fluid flowing through the discharge line 50. Since the pressure sensor 51 is directly connected to the drying unit 18 via the discharge line 50, the pressure of the processed fluid measured by the pressure sensor 51 is approximately equal to the internal pressure of the processed fluid in the drying unit 18.

[0078] Valve 52 is a valve that controls the on / off flow of the processed fluid. When open, it allows the processed fluid to flow to the downstream drain DR, and when closed, it does not allow the processed fluid to flow to the downstream drain DR. Flow meter 53 measures the flow rate of the processed fluid flowing through the discharge line 50.

[0079] The back pressure valve 54 is configured to maintain the primary pressure at the set pressure by adjusting the valve opening to allow fluid to flow to the secondary side when the primary pressure of the discharge line 50 exceeds the set pressure. The valve opening and set pressure of the back pressure valve 54 can be changed at any time by the control unit 7.

[0080] Figure 6 shows an example of the piping configuration of a processing fluid supply device 70 according to an embodiment. As shown in Figure 6, the processing fluid supply device 70 has a supply line 61. This supply line 61 has a first supply line 62 and a plurality (two in the figure) second supply lines 63.

[0081] The first supply line 62 supplies the processing fluid from the processing fluid supply source 60 to the processing fluid supply device 70. The first supply line 62 also branches into multiple second supply lines 63 within the processing fluid supply device 70.

[0082] The first supply line 62 is provided with the following components in order from upstream to downstream, relative to the processing fluid supply source 60: a valve 64, a check valve 65, a confluence section 71, multiple (two in the figure) confluence sections 72, a filter 73, a condenser 74, a pump 75, and a branch section 76. The first supply line 62 is also provided with the following components in order from upstream to downstream, relative to the branch section 76: a connection section 77, a pressure sensor 78, and a branch section 79.

[0083] Valve 64 is a valve that controls the on / off flow of the processing fluid. When open, it allows the processing fluid to flow to the downstream check valve 65, and when closed, it does not allow the processing fluid to flow to the downstream check valve 65. The check valve 65 prevents the processing fluid in the first supply line 62 from flowing back to the upstream side of the check valve 65.

[0084] The merging section 71 is where the first supply line 62 and the return line 90, which will be described later, merge. Merging section 72 is an example of another merging section. Merging section 72 is where the first supply line 62 and the return line 100, which will be described later, merge.

[0085] In the first supply line 62, the processing fluid is supplied in a gaseous state from the processing fluid supply source 60. Furthermore, the liquid processing fluid returned to the first supply line 62 from the multiple return lines 100 is converted from a liquid state to a gaseous state by the high-temperature gaseous processing fluid returned to the first supply line 62 from the return line 90. As a result, the processing fluid flows into the filter 73 in a gaseous state.

[0086] The filter 73 is, for example, a gas filter that filters the gaseous processing fluid flowing through the first supply line 62 and removes foreign matter contained in the processing fluid. By removing foreign matter from the processing fluid with such a filter 73, it is possible to suppress the generation of particles on the surface of the wafer W during the drying process of the wafer W using supercritical fluid.

[0087] The capacitor 74 is an example of a cooling unit. The capacitor 74 is connected to, for example, a cooling water supply unit (not shown) and can exchange heat between the cooling water and the gaseous processing fluid. In this way, the capacitor 74 cools the gaseous processing fluid flowing through the first supply line 62 to produce a liquid processing fluid.

[0088] Pump 75 pumps the liquid processing fluid supplied from condenser 74 to the downstream side of the first supply line 62. A return line 90, described later, branches off from branch 76. A bypass line 110 is connected to connection 77.

[0089] The pressure sensor 78 measures the pressure of the processing fluid flowing through the first supply line 62. Multiple (two in the diagram) second supply lines 63 branch off from the branching section 79.

[0090] Each second supply line 63 is provided with an orifice 80, a branch 81, and a pressure sensor 82, in order from upstream to downstream, relative to the branch 79. The orifice 80 reduces the flow velocity of the liquid processing fluid flowing through the second supply line 63 and adjusts the pressure.

[0091] A return line 100 branches off from the branching section 81. The pressure sensor 82 measures the pressure of the processing fluid flowing through the second supply line 63.

[0092] The return line 100 is an example of another return line. The return line 100 returns the liquid processing fluid flowing through the second supply line 63 to the confluence 72 of the first supply line 62. By returning the processing fluid to the upstream side via the return line 100 in this way, the number of times it can be filtered can be increased, thereby improving the performance in removing foreign matter.

[0093] The return line 100 is provided with a back pressure valve 101 and a valve 102 in order from the upstream side, with reference to the branching section 81.

[0094] The back pressure valve 101 is configured to maintain the primary pressure at the set pressure by adjusting the valve opening to allow fluid to flow to the secondary side when the primary pressure of the return line 100 exceeds the set pressure. The valve opening and set pressure of the back pressure valve 101 can be changed at any time by the control unit 7.

[0095] Valve 102 is a valve that controls the on / off flow of the processing fluid. When open, it allows the processing fluid to flow to the downstream confluence 72, and when closed, it does not allow the processing fluid to flow to the downstream confluence 72.

[0096] The liquid processing fluid returned from the return line 100 then returns to the confluence 72 of the first supply line 62. The liquid processing fluid returned from the confluence 72 is then changed from a liquid state to a gaseous state by the high-temperature gaseous processing fluid returned from the confluence 71 and flowing through the first supply line 62.

[0097] The return line 90, which branches off from the branching section 76 of the first supply line 62, returns the liquid processing fluid flowing through the first supply line 62 to the confluence section 71 of the first supply line 62. By returning the processing fluid to the upstream side via the return line 90 in this way, the number of times it can be filtered can be increased, thereby improving the performance in removing foreign matter.

[0098] The return line 90 is provided with a spiral heater 91, a connecting section 92, a back pressure valve 93, and a valve 94, in order from the upstream side, with respect to the branch section 76.

[0099] The spiral heater 91 is an example of a heating unit. The spiral heater 91 is wound around the return line 90 and heats the liquid processing fluid flowing through the return line 90 to generate a supercritical processing fluid.

[0100] A bypass line 110 is connected to the connection point 92. In other words, the connection point 77 of the first supply line 62 and the connection point 92 of the return line 90 are connected by the bypass line 110.

[0101] The back pressure valve 93 is configured to maintain the primary pressure at the set pressure by adjusting the valve opening to allow fluid to flow to the secondary side when the primary pressure of the return line 90 exceeds the set pressure.

[0102] The back pressure valve 93 then reduces the pressure of the supercritical processing fluid flowing through the return line 90 to generate a gaseous processing fluid. The valve opening and set pressure of the back pressure valve 93 can be changed at any time by the control unit 7.

[0103] Furthermore, the connection section 92 and the back pressure valve 93 are positioned above the spiral heater 91. This allows the low-density supercritical processing fluid to flow smoothly from the spiral heater 91 to the connection section 92 and the back pressure valve 93.

[0104] Valve 94 is a valve that controls the on / off flow of the processing fluid. When open, it allows the processing fluid to flow to the downstream confluence 71, and when closed, it does not allow the processing fluid to flow to the downstream confluence 71.

[0105] The high-temperature gaseous processed fluid generated by the back pressure valve 93 then returns to the confluence 71 of the first supply line 62 via the valve 94.

[0106] The processing fluid supply device 70 described above supplies the processing fluid in liquid form to multiple supply units 19 (see Figure 4). In other words, in this embodiment, the processing fluid is supplied from the processing fluid supply device 70 to the substrate processing apparatus 1 in liquid form, rather than in a gaseous or supercritical state.

[0107] This reduces problems caused by variations in length, even if there are variations in the distance between the processing fluid supply device 70 and each drying unit 18, i.e., in the length of each second supply line 63.

[0108] The control unit 7 measures the pressure of the processing fluid supplied from the second supply line 63 to the supply unit 19 using a pressure sensor 82 and controls it by adjusting the valve opening of the back pressure valve 101. For example, the control unit 7 increases the pressure of the processing fluid supplied to the supply unit 19 by increasing the set pressure on the primary side of the back pressure valve 101.

[0109] Furthermore, the control unit 7 reduces the pressure of the processing fluid supplied to the supply unit 19, for example, by lowering the set pressure on the primary side of the back pressure valve 101.

[0110] Similarly, the control unit 7 measures the pressure of the processing fluid supplied from the first supply line 62 to the multiple second supply lines 63 using a pressure sensor 78 and controls it by the valve opening of the back pressure valve 93. The control unit 7 then appropriately controls the valve opening of the back pressure valve 93 so that the measured value of the pressure sensor 78 remains constant.

[0111] Furthermore, in this embodiment, the spiral heater 91 causes the processing fluid to undergo a phase change from a liquid state to a supercritical state between the pump 75 and the back pressure valve 93. That is, the space between the pump 75 and the valve 41 (see Figure 5), which can be closed, or the back pressure valve 93, is not filled with an incompressible liquid processing fluid, but rather a portion of it is a compressible supercritical processing fluid.

[0112] As a result, even when the incompressible liquid processing fluid is pumped by the pump 75 in the first supply line 62, the pulsations generated in the pump 75 can be absorbed at the supercritical region. Therefore, according to this embodiment, the influence of pulsations generated in the pump 75 can be reduced when the liquid processing fluid is pumped by the pump 75.

[0113] In this case, for example, if a bypass line 110 is not provided in the processing fluid supply device 70, the feedback control by the back pressure valve 93 may not be able to keep up if the flow rate of the processing fluid flowing through the first supply line 62 increases rapidly.

[0114] Therefore, in this case, the pressure loss of the processing fluid in the spiral heater 91 increases sharply, which may prevent the processing fluid from being sufficiently heated in the spiral heater 91. As a result, the processing fluid returned from the return line 90 to the first supply line 62 may not reach the desired high temperature, and therefore the liquid processing fluid supplied from the return line 100 may not be sufficiently heated.

[0115] Therefore, the processed fluid flowing through the filter 73 becomes a gas-liquid mixture, and the processed fluid is not sufficiently filtered by the filter 73. In other words, if a bypass line 110 is not provided in the processed fluid supply device 70, a sudden increase in the flow rate of the processed fluid flowing through the first supply line 62 may reduce the filtration performance of the processed fluid.

[0116] Therefore, in this embodiment, a bypass line 110 is provided in the processing fluid supply device 70. This allows the processing fluid to be diverted downstream of the spiral heater 91 in the return line 90 through the bypass line 110 when the flow rate of the processing fluid flowing through the first supply line 62 increases rapidly. In other words, in this embodiment, the flow rate of the processing fluid flowing through the spiral heater 91 can be adjusted by the bypass line 110.

[0117] In other words, in this embodiment, the bypass line 110 functions as a flow rate adjustment mechanism that adjusts the flow rate of the processing fluid flowing to the spiral heater 91. By adjusting the flow rate of the processing fluid flowing to the spiral heater 91, it is possible to suppress a rapid increase in the pressure loss of the processing fluid in the spiral heater 91.

[0118] Therefore, since the spiral heater 91 can sufficiently heat the processing fluid to the desired temperature, it is possible to suppress the processing fluid from becoming a gas-liquid mixture upstream of the filter 73 in the first supply line 62. Accordingly, according to this embodiment, the filtration performance of the processing fluid can be improved.

[0119] During normal operation, the low-density supercritical processing fluid generated by the spiral heater 91 fills most of the connection section 92 and the bypass line 110, making it difficult for the high-density liquid processing fluid from the first supply line 62 to flow downstream of the bypass line 110.

[0120] <Example 1> Next, various modifications of the embodiment will be described with reference to Figures 7 to 12. Figure 7 is a diagram showing an example of the piping configuration of the processing fluid supply device 70 according to modification 1 of the embodiment.

[0121] As shown in Figure 7, the processing fluid supply device 70 according to Modification 1 differs from the embodiment described above in that a heater 120 is provided in the first supply line 62. Therefore, in the following examples, the same reference numerals are used for parts that are the same as those in the embodiments already described, and detailed explanations are omitted.

[0122] The heater 120 is an example of another heating unit. The heater 120 is installed between a plurality of confluence sections 72 and a filter 73 in the first supply line 62 and heats the processing fluid flowing through the first supply line 62.

[0123] As a result, as shown in Figure 7, even when, for example, a large amount of processing fluid returns from the return line 100 and the processing fluid is in a gas-liquid mixed state downstream of the multiple confluence sections 72, the processing fluid in this gas-liquid mixed state can be heated and changed to a gaseous state.

[0124] Therefore, according to Modification 1, the filtration performance of the processed fluid can be improved.

[0125] Figure 8 is a diagram showing an example of the configuration of a heater 120 according to a modified example of the embodiment 1, and is a schematic cross-sectional view of the heater 120 when viewed from the side. As shown in Figure 8, the heater 120 has an annular pipe 121 and a heating member 122.

[0126] The annular piping 121 is an annular pipe, for example, an annular pipe having a horizontally elongated rectangular shape in a side view, which is arranged at an angle. The annular piping 121 has a branch section 121a, a descending section 121b, an ascending section 121c, an ascending section 121d, a descending section 121e, and a junction section 121f.

[0127] The branching section 121a is located, for example, at the corner of the rectangular annular pipe 121, is connected to the upstream first supply line 62, and is the point where the annular pipe 121 branches into a descending section 121b and an ascending section 121c.

[0128] The descending section 121b is, for example, the long side of the rectangular annular pipe 121, and is the part that descends gently from the branching section 121a. The ascending section 121c is, for example, the short side of the rectangular annular pipe 121, and is the part that rises from the branching section 121a.

[0129] The rising section 121d is connected to the lower end of the descending section 121b and is the part that rises from the lower end of the descending section 121b. This rising section 121d includes, for example, most of the short and long sides of a rectangular annular pipe 121.

[0130] The descending section 121e is connected to the upper end of the ascending section 121c and is a portion that descends gently from the upper end of the ascending section 121c. This descending section 121e includes, for example, a portion of the long side of the rectangular annular pipe 121.

[0131] The confluence section 121f is the part where the upper end of the rising section 121d and the lower end of the descending section 121e merge and connect to the first supply line 62 on the downstream side.

[0132] The heating element 122 is positioned along the descending section 121b of the annular pipe 121 and heats the processing fluid flowing inside the descending section 121b. The detailed configuration of the heating element 122 will be described later.

[0133] In Modification 1, as shown in Figure 8, of the gas-liquid mixed processing fluid flowing into the heater 120 from the upstream side of the first supply line 62, the high-density liquid processing fluid flows to the descending section 121b, while the low-density gaseous processing fluid flows to the ascending section 121c. In other words, in Modification 1, a gas-liquid separation mechanism is provided inside the heater 120.

[0134] The liquid processing fluid that flows into the descending section 121b is heated by the heating element 122, changing it into a gaseous processing fluid. Furthermore, this gaseous processing fluid flows through the ascending section 121d and the confluence section 121f to the downstream first supply line 62.

[0135] Furthermore, the gaseous processing fluid that flows into the rising section 121c flows through the descending section 121e and the confluence section 121f to the downstream first supply line 62.

[0136] Thus, in the modified example 1, the liquid processing fluid that flows into the descending section 121b is heated by the heating element 122 while flowing relatively slowly through the gently sloping descending section 121b. This allows the liquid processing fluid to be heated over a wide contact area, thus efficiently converting the liquid processing fluid into a gaseous processing fluid.

[0137] Furthermore, in the modified example 1, the heater 120 may have a gas-liquid separation mechanism. This allows heating to be restricted to the liquid state of the processing fluid from the gas-liquid mixed state, thereby efficiently converting the gas-liquid mixed processing fluid into a gaseous state.

[0138] In the example shown in Figure 8, the annular pipe 121 is shown as a horizontally elongated rectangle in side view. However, this disclosure is not limited to such an example, and any side shape is acceptable as long as it is annular.

[0139] Figure 9 is a cross-sectional view taken along the line AA shown in Figure 8, and shows the cross-sectional configuration of the heating member 122. As shown in Figure 9, the heating member 122 includes a first plate-shaped member 123, a second plate-shaped member 124, a heater body 125, a fastening member 126, and a fastening member 127.

[0140] The first plate-shaped member 123 is made of a metal material such as aluminum and is, for example, flat. The first plate-shaped member 123 has a screw hole 123a, a through hole 123b, a rod-shaped member 123c, and a groove 123d. The screw hole 123a is a screw hole formed so that the fastening member 126 can be screwed into it. The through hole 123b penetrates between the upper and lower surfaces of the first plate-shaped member 123.

[0141] The rod-shaped member 123c is a rod-shaped member that extends within the through hole 123b in a predetermined direction (a direction perpendicular to the plane of the paper in the figure). The rod-shaped member 123c is configured to be rotatable along the circumferential direction within the through hole 123b and has a screw hole 123c1 that extends along the radial direction. The screw hole 123c1 is a screw hole formed so that the fastening member 127 can be screwed into it.

[0142] The groove 123d is formed on the lower surface of the first plate-like member 123, extends along a predetermined direction (perpendicular to the plane of the paper in the figure), and has a semicircular shape in cross-section. This semicircular shape corresponds to the upper half of the cross-sectional shape of the descending portion 121b (see Figure 8) of the annular pipe 121 (see Figure 8).

[0143] The second plate-shaped member 124 is made of a metal material such as aluminum and is, for example, flat. The second plate-shaped member 124 has a through hole 124a, a through hole 124b, a rod-shaped member 124c, and a groove 124d. The through hole 124a is a through hole formed so that the fastening member 126 can be inserted through it, and is positioned in a location corresponding to the screw hole 123a of the first plate-shaped member 123.

[0144] The through-hole 124b penetrates between the upper and lower surfaces of the second plate-like member 124. It is positioned offset in a predetermined direction (to the right in the figure) relative to the through-hole 123b of the first plate-like member 123.

[0145] The rod-shaped member 124c is a rod-shaped member that extends within the through-hole 124b in a predetermined direction (a direction perpendicular to the plane of the paper in the figure). The rod-shaped member 124c is configured to be rotatable along the circumferential direction within the through-hole 124b and has a through-hole 124c1 that extends along the radial direction. The through-hole 124c1 is a through-hole formed so that the fastening member 127 can be inserted through it.

[0146] The groove 124d is formed on the upper surface of the second plate-like member 124, extends along a predetermined direction (perpendicular to the plane of the paper in the figure), and has a semicircular shape in cross-section. This semicircular shape corresponds to the lower half of the cross-sectional shape of the descending portion 121b of the annular pipe 121. The groove 124d is positioned in a location corresponding to the groove 123d of the first plate-like member 123.

[0147] The heater body 125 is a component that heats up when power is supplied from an external source, and is positioned to be embedded inside the second plate-shaped member 124. The heater body 125 extends, for example, along a predetermined direction (perpendicular to the plane of the paper in the figure) inside the second plate-shaped member 124.

[0148] The fastening members 126 and 127 are, for example, bolts, and are screwed to the first plate-shaped member 123 via the second plate-shaped member 124.

[0149] The heating element 122 is formed by positioning the lower portion 121b of the annular pipe 121 between the groove 123d of the first plate-shaped member 123 and the groove 124d of the second plate-shaped member 124, and fastening the first plate-shaped member 123 and the second plate-shaped member 124 with fastening members 126 and 127.

[0150] In this configuration, the fastening member 126 is positioned approximately perpendicular to the main surfaces of the first plate-shaped member 123 and the second plate-shaped member 124, while the fastening member 127 is positioned at an angle to the main surfaces of the first plate-shaped member 123 and the second plate-shaped member 124.

[0151] As a result, as shown in Figure 9, the first plate-shaped member 123 and the second plate-shaped member 124 exert a pressing force from the left and right against the downward portion 121b of the annular pipe 121 located inside the grooves 123d and 124d.

[0152] This is because the rod-shaped members 123c and 124c, which are in direct contact with the fastening member 127, rotate in the circumferential direction as the screw fastening force is applied, thus generating a force that causes the first plate-shaped member 123 and the second plate-shaped member 124 to slide horizontally relative to each other.

[0153] As a result, in Modification 1, the adhesion force between the first plate-shaped member 123 and the second plate-shaped member 124 and the lowered portion 121b of the annular pipe 121 can be improved. Therefore, according to Modification 1, the amount of heat transferred from the heater body 125 to the lowered portion 121b of the annular pipe 121 can be increased, thereby improving the heating efficiency of the heating member 122.

[0154] Furthermore, since the lateral force generated by the fastening member 127 is suppressed to a certain extent by the fastening member 126, excessive force is not applied to the lowered portion 121b of the annular pipe 121 by the lateral force generated by the fastening member 127.

[0155] <Modification 2> Figure 10 shows an example of the piping configuration of the processing fluid supply device 70 according to the modified embodiment 2. As shown in Figure 10, the processing fluid supply device 70 according to the modified embodiment 2 differs from the modified embodiment 1 described above in that the spiral heater 91 and the bypass line 110 are not provided.

[0156] As a result, the processing fluid is not heated in the return line 90, and the processing fluid is supplied in a liquid state to the confluence 71 of the first supply line 62. Therefore, a gas-liquid mixed processing fluid flows into the downstream side of the multiple confluences 72 in the first supply line 62.

[0157] On the other hand, in the modified example 2, a heater 120 is provided between the multiple confluence sections 72 and the filter 73 in the first supply line 62, so that the processed fluid in a gas-liquid mixed state can be changed to a gaseous state.

[0158] Therefore, according to Modification 2, the filtration performance of the processed fluid can be improved.

[0159] <Variation 3> Figure 11 shows an example of the piping configuration of a processing fluid supply device 70 according to the third modified embodiment. As shown in Figure 11, in the processing fluid supply device 70 according to the third modified embodiment, the first supply line 62 is provided with a valve 64, a check valve 65, a confluence section 171, a plurality of confluence sections 172, and a confluence section 173, in order from the upstream side with respect to the processing fluid supply source 60.

[0160] Furthermore, the first supply line 62 is provided with a filter 174, a capacitor 175, a pump 176, a branching section 177, a pressure sensor 178, a branching section 179, and a branching section 180, in order from the upstream side with respect to the confluence section 173.

[0161] The merging section 171 is where the first supply line 62 and the return line 200 (described later) merge. Merging section 172 is an example of another merging section. Merging section 172 is where the first supply line 62 and the return line 210 (described later) merge. Merging section 173 is where the first supply line 62 and the return line 190 (described later) merge.

[0162] In the modified example 3, the liquid processing fluid returned to the first supply line 62 from the multiple return lines 210 and return line 190 is changed from a liquid state to a gaseous state by the high-temperature gaseous processing fluid returned to the first supply line 62 from the return line 200. As a result, the gaseous processing fluid flows into the filter 174.

[0163] The filter 174 is, for example, a gas filter that filters the gaseous processing fluid flowing through the first supply line 62 and removes foreign matter contained in the processing fluid. By removing foreign matter from the processing fluid with such a filter 174, it is possible to suppress the generation of particles on the surface of the wafer W during the drying process of the wafer W using supercritical fluid.

[0164] The capacitor 175 is an example of a cooling unit. The capacitor 175 is connected to, for example, a cooling water supply unit (not shown), and can exchange heat between the cooling water and the gaseous processing fluid. In this way, the capacitor 175 cools the gaseous processing fluid flowing through the first supply line 62 to produce a liquid processing fluid.

[0165] Pump 176 pumps the liquid processing fluid supplied from the condenser 175 to the downstream side of the first supply line 62. A return line 190, described later, branches off from the branching section 177. Pressure sensor 178 measures the pressure of the processing fluid flowing through the first supply line 62.

[0166] From branching point 179, the return line 200, which will be described later, branches off. From branching point 180, multiple (two in the diagram) second supply lines 63 branch off.

[0167] Each second supply line 63 is provided with an orifice 181, a branch 182, and a pressure sensor 183, in order from upstream to downstream, with respect to the branch 180. The orifice 181 reduces the flow velocity of the liquid processing fluid flowing through the second supply line 63 and adjusts the pressure.

[0168] A return line 210 branches off from branch 182. A pressure sensor 183 measures the pressure of the processing fluid flowing through the second supply line 63.

[0169] The return line 210 is an example of another return line. The return line 210 returns the liquid processing fluid flowing through the second supply line 63 to the confluence 172 of the first supply line 62. By returning the processing fluid to the upstream side via the return line 210 in this way, the number of times it can be filtered can be increased, improving the performance in removing foreign matter.

[0170] The return line 210 is provided with a back pressure valve 211 and a valve 212 in order from the upstream side, with reference to the branching section 182.

[0171] The back pressure valve 211 is configured to maintain the primary pressure at the set pressure by adjusting the valve opening to allow fluid to flow to the secondary side when the primary pressure of the return line 210 exceeds the set pressure. The valve opening and set pressure of the back pressure valve 211 can be changed at any time by the control unit 7.

[0172] Valve 212 is a valve that controls the on / off flow of the processing fluid. When open, it allows the processing fluid to flow to the downstream confluence 172, and when closed, it does not allow the processing fluid to flow to the downstream confluence 172.

[0173] The liquid processing fluid returned from the return line 210 then returns to the confluence 172 of the first supply line 62. The liquid processing fluid returned from the confluence 172 is then changed from a liquid state to a gaseous state by the high-temperature gaseous processing fluid returned from the confluence 171 and flowing through the first supply line 62.

[0174] The return line 190, which branches off from the branching section 177 of the first supply line 62, returns the liquid processing fluid flowing through the first supply line 62 to the confluence section 173 of the first supply line 62. By returning the processing fluid to the upstream side via the return line 190 in this way, the number of times it can be filtered can be increased, thereby improving the performance in removing foreign matter.

[0175] The return line 190 is provided with a back pressure valve 191 and a valve 192 in order from the upstream side, with reference to the branching section 177.

[0176] The back pressure valve 191 is configured to maintain the primary pressure at the set pressure by adjusting the valve opening to allow fluid to flow to the secondary side when the primary pressure of the return line 190 exceeds the set pressure.

[0177] Valve 192 is a valve that controls the on / off flow of the processing fluid. When open, it allows the processing fluid to flow to the downstream confluence 173, and when closed, it does not allow the processing fluid to flow to the downstream confluence 173.

[0178] The liquid processing fluid returned from the return line 190 then returns to the confluence 173 of the first supply line 62. The liquid processing fluid returned from the confluence 173 is then changed from a liquid state to a gaseous state by the high-temperature gaseous processing fluid that returns from the confluence 171 and flows through the first supply line 62.

[0179] The return line 200, which branches off from the branching section 179 of the first supply line 62, returns the liquid processing fluid flowing through the first supply line 62 to the confluence section 171 of the first supply line 62. By returning the processing fluid to the upstream side via the return line 200 in this way, the number of times it can be filtered can be increased, thereby improving the performance in removing foreign matter.

[0180] The return line 200 is equipped with a spiral heater 201, a valve 202, and an orifice 203, in order from the upstream side, with respect to the branching section 179.

[0181] The spiral heater 201 is an example of a heating section. The spiral heater 201 is wound around the return line 200 and heats the liquid processing fluid flowing through the return line 200 to generate a supercritical processing fluid. The spiral heater 201 is located near the confluence section 171.

[0182] Valve 202 is a valve that controls the on / off flow of the processing fluid. When open, it allows the processing fluid to flow through the downstream orifice 203, and when closed, it does not allow the processing fluid to flow through the downstream orifice 203.

[0183] Orifice 203 is an example of a flow rate adjustment mechanism. Orifice 203 controls the flow rate of the processed fluid so that the flow rate of the processed fluid flowing through the return line 200 remains constant. In addition, orifice 203 reduces the pressure of the supercritical processed fluid flowing through the return line 200 to generate a gaseous processed fluid.

[0184] The high-temperature gaseous processing fluid generated in the orifice 203 then returns to the confluence 171 of the first supply line 62.

[0185] In Modification 3, the spiral heater 201 causes the processing fluid to undergo a phase change from a liquid state to a supercritical state between the pump 176 and the valve 202. That is, the space between the pump 176 and the valve 41 (see Figure 5) or valve 202, which can be closed, is not filled with an incompressible liquid processing fluid, but rather a portion of it is a compressible supercritical processing fluid.

[0186] As a result, even when the incompressible liquid processing fluid is sent out by the pump 176 in the first supply line 62, the pulsations generated in the pump 176 can be absorbed at the supercritical region. Therefore, according to Modification 3, the influence of pulsations generated in the pump 176 when the liquid processing fluid is sent out by the pump 176 can be reduced.

[0187] Furthermore, in the third modified example, the orifice 203 controls the amount of processing fluid flowing through the return line 200 to a constant value. This allows the amount of processing fluid flowing through the return line 200 to remain constant even if the flow rate of the processing fluid flowing through the first supply line 62 increases rapidly, thereby enabling the spiral heater 201 to sufficiently heat the processing fluid to the desired temperature.

[0188] Therefore, according to Modification 3, it is possible to suppress the processing fluid from becoming a gas-liquid mixture upstream of the filter 174 in the first supply line 62, thereby improving the filtration performance of the processing fluid.

[0189] Furthermore, in the third modified example, the spiral heater 201 is preferably located near the confluence 171. This allows a higher temperature gaseous processing fluid to be supplied to the confluence 171 of the first supply line 62, thereby suppressing the flow of a gas-liquid mixed processing fluid into the filter 174.

[0190] <Modification 4> Figure 12 shows an example of the piping configuration of the processing fluid supply device 70 according to the modified embodiment 4. As shown in Figure 12, the processing fluid supply device 70 according to modified embodiment 4 differs from the modified embodiment 3 in that the heater 120 described above is provided in the first supply line 62.

[0191] The heater 120 is installed between the confluence 173 and the filter 174 in the first supply line 62 and heats the processing fluid flowing through the first supply line 62.

[0192] As a result, as shown in Figure 12, even when a large amount of processing fluid returns from, for example, the return line 190 or the return line 210, and the processing fluid is in a gas-liquid mixed state downstream of the confluence section 173, the processing fluid in this gas-liquid mixed state can be heated and changed to a gaseous state.

[0193] Therefore, according to Modification 4, the filtration performance of the processed fluid can be improved.

[0194] The processing fluid supply device 70 according to this embodiment includes a supply line 61, a cooling unit (condenser 74(175)), a pump 75(176), a return line 90(200), a heating unit (spiral heater 91(201)), and a flow rate adjustment mechanism. The supply line 61 supplies processing fluid from a processing fluid supply source 60 that supplies processing fluid in a gaseous state to the substrate processing device 1. The cooling unit (condenser 74(175)) is provided in the supply line 61 and cools the processing fluid in a gaseous state to produce processing fluid in a liquid state. The pump 75(176) is provided downstream of the cooling unit (condenser 74(175)) in the supply line 61. The return line 90(200) branches off from the branch section 76(179) located downstream of the pump 75(176) in the supply line 61 and returns the processed fluid to the confluence section 71(171) located upstream of the cooling section (condenser 74(175)) in the supply line 61. The heating section (spiral heater 91(201)) is provided in the return line 90(200) and heats the processed fluid. The flow rate adjustment mechanism (bypass line 110, orifice 203) adjusts the flow rate of the processed fluid supplied to the heating section (spiral heater 91(201)). This improves the filtration performance of the processed fluid.

[0195] Furthermore, in the processing fluid supply device 70 according to this embodiment, the flow rate adjustment mechanism is a bypass line 110 that connects the downstream side of the branch section 76 in the supply line 61 and the downstream side of the heating section (spiral heater 91) in the return line 90. This makes it possible to suppress a rapid increase in the pressure loss of the processing fluid in the spiral heater 91 even when the flow rate of the processing fluid flowing through the first supply line 62 increases rapidly.

[0196] Furthermore, the processing fluid supply device 70 according to the embodiment further includes a filter 174 provided between the confluence section 171 and the cooling section (condenser 175) in the supply line 61. In addition, a heating section (spiral heater 201) is provided near the confluence section 171. This makes it possible to suppress the flow of the processing fluid in a gas-liquid mixed state into the filter 174.

[0197] Furthermore, in the processing fluid supply device 70 according to this embodiment, the heating section (spiral heater 201) is provided near the confluence section 171 in the return line 200. The flow rate adjustment mechanism is an orifice 203 provided downstream of the heating section (spiral heater 201) in the return line 200. This makes it possible to suppress a rapid increase in the pressure loss of the processing fluid in the spiral heater 201 even when the flow rate of the processing fluid flowing through the first supply line 62 increases rapidly.

[0198] Furthermore, the processing fluid supply device 70 according to the embodiment further includes another return line (return line 100(210)). The other return line (return line 100(210)) branches off from another branch (branch 81(182)) located downstream of branch 76(179) in the supply line 61. The other return line (return line 100(210)) returns the processing fluid to another confluence (confluence 72(172)) located upstream of the cooling section (condenser 74(175)) in the supply line 61. This increases the number of times the fluid can be filtered, thereby improving the performance in removing foreign matter.

[0199] Furthermore, the processing fluid supply device 70 according to the embodiment further comprises a filter 73(174) and another heating unit (heater 120). The filter 73(174) is provided between another confluence section (confluence section 72(172)) and a cooling unit (condenser 74(175)) in the supply line 61. The other heating unit (heater 120) is located between another confluence section (confluence section 72(172)) and the filter 73(174) and heats the processing fluid. This improves the filtration performance of the processing fluid.

[0200] Furthermore, in the processing fluid supply device 70 according to this embodiment, another heating unit (heater 120) has a gas-liquid separation mechanism. This makes it possible to efficiently change the processing fluid, which is in a gas-liquid mixed state, into a gaseous state.

[0201] Furthermore, the processing fluid supply method according to the embodiment includes a filtering step, a step of converting to a liquid state, a step of passing the fluid through, and a step of adjusting the flow rate. The filtering step involves passing the gaseous processing fluid supplied from the processing fluid supply source 60 through a filter 73(174) provided in the supply line 61 for filtration. The step of converting to a liquid state involves cooling the processing fluid that has passed through the filter 73(174) in a cooling unit (condenser 74(175)) provided in the supply line 61 to convert it to a liquid state. The step of passing the fluid through involves pumping the liquid processing fluid to the substrate processing apparatus 1 using a pump 75(176) and passing it through a return line 90(200) that branches off from the downstream side of the pump 75(176) in the supply line 61. The process of adjusting the flow rate involves heating the processing fluid in a heating unit (spiral heater 91(201)) provided in the return line 90(200), and adjusting the flow rate of the processing fluid supplied to the heating unit (spiral heater 91(201)). This improves the filtration performance of the processing fluid.

[0202] Furthermore, the processing fluid supply method according to the embodiment includes a filtering step, a step of converting to a liquid state, a step of passing the fluid through, and a heating step. The filtering step involves passing the gaseous processing fluid supplied from the processing fluid supply source 60 through a filter 73(174) provided in the supply line 61 for filtration. The step of converting to a liquid state involves cooling the processing fluid that has passed through the filter 73(174) in a cooling unit (condenser 74(175)) provided in the supply line 61 to convert it to a liquid state. The step of passing the fluid through involves pumping the liquid processing fluid to the substrate processing apparatus 1 using a pump 75(176) and passing it through a return line 90(200) that branches off from the downstream side of the pump 75(176) in the supply line 61. The heating step involves heating the processing fluid that is returned from the return line 90(200) to the upstream side of the filter 73(174) in the supply line 61 before passing it through the filter 73(174). This makes it possible to improve the filtration performance of the processed fluid.

[0203] While embodiments of the present disclosure have been described above, the present disclosure is not limited to the embodiments described above, and various modifications are possible without departing from its spirit. For example, the above embodiments show an example in which the first supply line 62 branches into two second supply lines 63, but the present disclosure is not limited to such an example, and the first supply line 62 may branch into three second supply lines 63. Furthermore, the first supply line 62 does not have to branch into multiple second supply lines 63.

[0204] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0205] 1. Substrate processing apparatus 18. Drying Unit (Example of a substrate processing unit) 60 Processing fluid supply source 61 Supply Line 62. Supply Line 1 63 Second supply line 71 Confluence 72. Confluence (an example of another confluence) 73 Filters 74. Capacitor (an example of a cooling unit) 75 pumps 76 Branching point 81 Branching point (an example of another branching point) 90 return line 91 Spiral heater (an example of a heating element) 110 Bypass line (an example of a flow rate adjustment mechanism) 120 Heater (an example of another heating element) 171 Confluence 172 Confluence (Another example of a confluence) 174 filters 175 Capacitor (an example of a cooling unit) 176 Pumps 179 Branching point 182 Branching point (an example of another branching point) 200 return line 201 Spiral heater (an example of a heating element) 203 Orifice (an example of a flow rate adjustment mechanism)

Claims

1. A supply line that supplies the processing fluid from a processing fluid supply source that supplies the processing fluid in a gaseous state to a substrate processing apparatus, A cooling unit provided in the supply line, which cools the gaseous processing fluid to generate the processing fluid in a liquid state, A pump provided downstream of the cooling section in the supply line, A return line branches off from the branch located downstream of the pump in the supply line and returns the processed fluid to the confluence located upstream of the cooling section in the supply line, A heating unit is provided in the return line for heating the processing fluid, A flow rate adjustment mechanism for adjusting the flow rate of the processing fluid supplied to the heating section, Equipped with, The flow rate adjustment mechanism is a bypass line connecting the downstream side of the branching section in the supply line and the downstream side of the heating section in the return line. Processing fluid supply device.

2. A supply line that supplies the processing fluid from a processing fluid supply source that supplies the processing fluid in a gaseous state to a substrate processing apparatus, A cooling unit provided in the supply line, which cools the gaseous processing fluid to generate the processing fluid in a liquid state, A pump provided downstream of the cooling section in the supply line, A return line branches off from the branch located downstream of the pump in the supply line and returns the processed fluid to the confluence located upstream of the cooling section in the supply line, A heating unit is provided in the return line for heating the processing fluid, A flow rate adjustment mechanism for adjusting the flow rate of the processing fluid supplied to the heating section, A filter provided between the confluence section and the cooling section in the supply line, Equipped with, The heating section is provided near the confluence section. Processing fluid supply device.

3. The heating section is provided near the confluence section in the return line, The flow rate adjustment mechanism is an orifice provided downstream of the heating section in the return line. The processing fluid supply device according to claim 2.

4. A supply line that supplies the processing fluid from a processing fluid supply source that supplies the processing fluid in a gaseous state to a substrate processing apparatus, A cooling unit provided in the supply line, which cools the gaseous processing fluid to generate the processing fluid in a liquid state, A pump provided downstream of the cooling section in the supply line, A return line branches off from the branch located downstream of the pump in the supply line and returns the processed fluid to the confluence located upstream of the cooling section in the supply line, A heating unit is provided in the return line for heating the processing fluid, A flow rate adjustment mechanism for adjusting the flow rate of the processing fluid supplied to the heating section, A separate return line branches off from another branch located downstream of the branch in the supply line, and returns the processed fluid to another confluence located upstream of the cooling section in the supply line, A processing fluid supply device equipped with the following features.

5. A filter provided between the other confluence section and the cooling section in the supply line, The system further comprises another heating unit located between the other confluence unit and the filter, which heats the processing fluid. The processing fluid supply device according to claim 4.

6. The other heating unit has a gas-liquid separation mechanism. The processing fluid supply device according to claim 5.

7. A process of filtering a gaseous processing fluid supplied from a processing fluid supply source by passing it through a filter installed in the supply line, The process of cooling the processing fluid that has passed through the filter in a cooling unit provided in the supply line to bring it into a liquid state, The process involves pumping the liquid processing fluid to the substrate processing apparatus using a pump, while simultaneously passing the fluid through a return line branching off from the downstream side of the pump in the supply line. A step of heating the processing fluid in a heating section provided in the return line and adjusting the flow rate of the processing fluid supplied to the heating section, Includes, The flow rate adjustment mechanism that performs the process of adjusting the flow rate is a bypass line that connects the downstream side of the branching section located downstream of the pump in the supply line and the downstream side of the heating section in the return line. A method for supplying processing fluid.

8. A process of filtering a gaseous processing fluid supplied from a processing fluid supply source by passing it through a filter installed in the supply line, The process of cooling the processing fluid that has passed through the filter in a cooling unit provided in the supply line to bring it into a liquid state, The process involves pumping the liquid processing fluid to the substrate processing apparatus using a pump, while simultaneously passing the fluid through a return line branching off from the downstream side of the pump in the supply line. A step of heating the processing fluid, which is returned from the return line to the upstream side of the filter in the supply line, before passing it through the filter, Includes, The filter is located upstream of the cooling section in the supply line and is provided between the confluence section where the return line joins and the cooling section. The heating unit that performs the heating process is provided near the confluence in the supply line. A method for supplying processing fluid.

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