Semiconductor device and method for manufacturing a semiconductor device

JP7877816B2Active Publication Date: 2026-06-23FUJI ELECTRIC CO LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
FUJI ELECTRIC CO LTD
Filing Date
2022-05-16
Publication Date
2026-06-23

AI Technical Summary

Benefits of technology

【0011】 前記態様によれば、外部導体に接続可能な主端子と回路板に接合される接続端子とを有する端子部材における接続端子の発熱を抑制することができる。

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Abstract

To provide a semiconductor device and a manufacturing method for the same that suppress heat generation of a connecting terminal in a terminal member that has a main terminal connectable to an external conductor and a connecting terminal that is bonded to a circuit substrate.SOLUTION: A semiconductor device (1) includes a semiconductor device (7), a circuit substrate (62) electrically connected to the semiconductor device (7), and a terminal member (18). The terminal member (18) has a main terminal (18a) connectable to an external conductor and a connecting terminal (18b) connected to the circuit substrate (62). The connecting terminal (18b) has a tip portion (21) bonded to the circuit substrate (62), a body portion (22) rising from the tip portion (21) and extending toward the main terminal (18a) side, and a conductive connecting portion (23) connected to the body portion (22). The connecting portion (23) has a larger cross-sectional area perpendicular to a current path than a portion where the connecting portion (23) of the body portion (22) is connected.SELECTED DRAWING: Figure 2
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Claims

1. Semiconductor elements and An insulating substrate having a circuit board electrically connected to the semiconductor element, The terminal member comprises a main terminal that can be connected to an external conductor and a connecting terminal that is joined to the circuit board, The aforementioned connection terminal has a tip portion that is joined to the circuit board, a main body portion that rises from the tip portion and extends toward the main terminal, and a conductive connecting portion connected to the main body portion. The aforementioned connecting portion has a larger cross-sectional area perpendicular to the current path than the portion of the main body to which the connecting portion is connected. The aforementioned connection terminal has a plurality of the aforementioned tip portions, The main body portion includes a plurality of branched portions that branch toward the plurality of tip portions, The aforementioned connecting portion is connected to the plurality of branching portions. A semiconductor device characterized by the following features.

2. Each of the aforementioned connection terminals has a plurality of connection portions that are connected to and separated from the branch portion. The semiconductor device according to claim 1, characterized in that it is a semiconductor device.

3. The thickness of the connecting portion is greater than the thickness of the main body portion. The semiconductor device according to claim 1, characterized in that it is a semiconductor device.

4. The aforementioned connecting portion is joined to the circuit board. The semiconductor device according to claim 1, characterized in that it is a semiconductor device.

5. The tip portion and the connecting portion of the connection terminal are joined to the same circuit board. The semiconductor device according to claim 1, characterized in that it is a semiconductor device.

6. A semiconductor device comprising a semiconductor element, an insulating substrate having a circuit board electrically connected to the semiconductor element, and a terminal member having a main terminal connectable to an external conductor and a connecting terminal joined to the circuit board, wherein the connecting terminal has a tip portion joined to the circuit board, a main body portion rising from the tip portion and extending toward the main terminal, and a conductive connecting portion connected to the main body portion, the connecting portion having a larger cross-sectional area perpendicular to the current path than the portion of the main body portion to which the connecting portion is connected, the connecting terminal having a plurality of tip portions, the main body portion including a plurality of branch portions branching toward the plurality of tip portions, and the connecting portion being connected to the plurality of branch portions, a method for manufacturing a semiconductor device, The aforementioned connecting portion is connected to the main body portion, The connecting portion, which is connected to the main body portion, is joined to the circuit board. The tip portion of the connecting terminal, with the connecting portion joined to the circuit board, is joined to the circuit board. A method for manufacturing a semiconductor device, characterized by the following:

7. The connection terminal has a plurality of connection portions, each connected to and separated from the branch portion. A method for manufacturing a semiconductor device according to claim 6, characterized in that it is as described above.

8. The tip portion and the connecting portion of the connection terminal are joined to the same circuit board. A method for manufacturing a semiconductor device according to claim 6, characterized in that it is as described above.

9. The connecting portion is connected to the main body portion by laser welding, The connecting portion, which is connected to the main body portion, is joined to the circuit board by a bonding material. The tip portion of the connecting terminal, with the connecting portion joined to the circuit board, is joined to the circuit board by ultrasonic bonding. A method for manufacturing a semiconductor device according to claim 6, characterized in that it is as described above.