Semiconductor equipment
By integrating a non-MOS structure as a diode in the current sensing unit to isolate current leakage, the semiconductor device enhances breakdown resistance and protects the active region from damage.
JP7877901B2Active Publication Date: 2026-06-23FUJI ELECTRIC CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- FUJI ELECTRIC CO LTD
- Filing Date
- 2022-07-13
- Publication Date
- 2026-06-23
Smart Images
Figure 0007877901000001 
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Abstract
To provide a semiconductor device capable of improving breakdown resistance in an active region of a current sense part.SOLUTION: A semiconductor device comprises a main semiconductor region and a current detection region. The main semiconductor region and the current detection region have a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first semiconductor region 7 of the first conductivity type, a second semiconductor region 8 of a second conductivity type, a trench 16, a first high concentration region 3 of the second conductivity type, and a second high concentration region of the second conductivity type. An active region where a current flows in an ON state of the current detection region has: a first cell 43 that operates as a transistor; and a second cell 44 provided at four corners of the first cell, not operating as a transistor but operating only as a diode.SELECTED DRAWING: Figure 4
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