Conductive pastes, cured products, and semiconductor devices

JP7877906B2Active Publication Date: 2026-06-23SUMITOMO BAKELITE CO LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
SUMITOMO BAKELITE CO LTD
Filing Date
2022-07-15
Publication Date
2026-06-23

AI Technical Summary

Benefits of technology

【0010】 本発明によれば、実装信頼性のばらつきが改善された半導体装置を提供可能である導電性ペーストが提供される。

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Abstract

To provide a conductive paste capable of providing a semiconductor device with a variation of mounting reliability mitigated.SOLUTION: A conductive paste includes a monomer (A), a polymer (B), a conductive particle (C) and a spacer particle (D). The spacer particle (D) has D50 of 5-100 μm, inclusive.SELECTED DRAWING: Figure 1
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Claims

1. Monomer (A) and, Polymer (B) and Conductive particles (C) and Spacer particle (D), In a conductive paste containing, The D of the spacer particle (D) 50 The size is between 5 μm and 100 μm. The conductive paste is applied to a substrate, heated at a constant rate from 30°C to 200°C for 60 minutes, then heated at 200°C for 2 hours, and then peeled off from the substrate. The resulting cured product, with a thickness of 1 mm, has a thermal conductivity λ in the thickness direction at 25°C measured by the laser flash method of 10 W / m·K or higher. A conductive paste in which a 250 μm thick cured product is obtained by applying the conductive paste to a substrate, raising the temperature from 30°C to 200°C at a constant rate over 60 minutes, then heating at 200°C for 2 hours, and then peeling it off the substrate, and the dynamic storage modulus E' determined by viscoelastic measurement at 25°C, tensile mode, and frequency of 10 Hz is 20 GPa or less.

2. In the conductive paste according to claim 1, A conductive paste in which the conductive particle (C) content is 50% by mass or more and 99% by mass or less.

3. In the conductive paste according to claim 1 or 2, A conductive paste in which the coefficient of variation Cv of the particle size of the spacer particles (D) is 20% or less.

4. In the conductive paste according to claim 1 or 2, The compressive fracture strength of the spacer particle (D) is 5 kg / mm². 2 That's all for conductive paste.

5. In the conductive paste according to claim 1 or 2, A conductive paste comprising a crosslinkable resin in which the spacer particles (D) have a divinylbenzene skeleton as their main chain.

6. In the conductive paste according to claim 1 or 2, A conductive paste wherein the polymer (B) contains a (meth)acrylic polymer.

7. In the conductive paste according to claim 1 or 2, A conductive paste wherein the polymer (B) has a glass transition temperature of -75°C or higher and 65°C or lower.

8. In the conductive paste according to claim 1 or 2, A conductive paste wherein the polymer (B) has a reactive group.

9. A conductive paste according to claim 1 or 2, A conductive paste wherein the monomer (A) contains a (meth)acrylic monomer.

10. A conductive paste according to claim 9, A conductive paste wherein the monomer (A) comprises a monofunctional (meth)acrylic monomer (A1) and a polyfunctional (meth)acrylic monomer (A2).

11. A conductive paste according to claim 1 or 2, Furthermore, a conductive paste containing a coupling agent.

12. A conductive paste according to claim 1 or 2, Furthermore, a conductive paste containing a radical polymerization initiator.

13. A conductive paste according to claim 1 or 2, A conductive paste used for die attachment.

14. A cured product of a conductive paste according to claim 1 or 2.

15. base material and A semiconductor element mounted on the substrate via an adhesive layer which is a cured product of the conductive paste described in claim 1 or 2, A semiconductor device equipped with a semiconductor device.