Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method, which are capable of suppressing the occurrence of defective products by protecting a portion, which is exposed after etching, with an oxide film.SOLUTION: A substrate processing apparatus 1 includes: a rotor 10 which holds and rotates a silicon wafer 100; a first processing liquid supply unit 40 which performs etching by supplying a first processing liquid for etching to a surface to be processed of the silicon wafer that is rotated by the rotor 10; and a second processing liquid supply unit 50 which performs, following the etching by means of the supply of the first processing liquid, an oxide film formation process by supplying a second processing liquid for oxidation to the surface to be processed of the silicon wafer that is rotated by the rotor 10.SELECTED DRAWING: Figure 3

Claims

1. A rotating body that holds and rotates the substrate, A first processing liquid supply unit performs etching by supplying a first processing liquid for etching to the surface of the substrate to be processed, which is rotated by the aforementioned rotating body, A second processing liquid supply unit performs an oxide film formation treatment by supplying a second processing liquid for oxidation treatment to the surface of the substrate to be treated, which is rotated by the rotating body, in a manner that is continuous with the etching treatment by supplying the first processing liquid. It has, The substrate processing apparatus is characterized in that the second processing liquid supply unit includes a first supply nozzle that supplies the second processing liquid toward the center of the surface to be processed of the substrate which is rotated by the rotating body, and a second supply nozzle that supplies the second processing liquid toward the outer circumference of the surface to be processed of the substrate which is rotated by the rotating body.

2. The substrate processing apparatus according to claim 1, characterized in that it has a cleaning liquid supply unit that supplies a cleaning liquid to the surface to be processed, in succession to the oxide film formation process.

3. The rotating body is housed in a first chamber in which the etching process and the oxide film formation process are carried out, The substrate processing apparatus according to claim 1 or 2, further comprising a cleaning device for cleaning the surface to be processed having an oxide film formed by supplying the second processing liquid, in a second chamber separate from the first chamber.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the first processing solution contains phosphoric acid.

5. The surface of the substrate to be treated includes a nitride film and an oxide film. The substrate processing apparatus according to claim 4, characterized in that the etching process targets the nitride film.

6. The substrate processing apparatus according to claim 5, characterized in that the surface of the substrate to be processed has a portion in which polysilicon, oxide film, and nitride film overlap on a silicon wafer in that order.

7. The substrate processing apparatus according to any one of claims 1 to 6, characterized in that the second processing solution contains hydrogen peroxide or ozonated water.

8. The substrate processing apparatus according to any one of claims 1 to 7, characterized in that it has a preheating unit for heating the second processing liquid before supplying it to the surface to be processed.

9. The second processing liquid supply unit is, The first supply nozzle is provided at the tip of the first swinging arm, The second supply nozzle is provided at the tip of the second swinging arm, A rocking mechanism that rocks the first rocking arm and the second rocking arm to move between a supply position facing the surface of the substrate to be processed and a retracted position moved away from the supply position, A substrate processing apparatus according to any one of claims 1 to 8, characterized by having the following features.

10. A rotating body that holds and rotates a substrate, A first processing liquid supply unit performs etching by supplying a first processing liquid for etching to the surface of the substrate to be processed, which is rotated by the aforementioned rotating body, A second processing liquid supply unit performs an oxide film formation treatment by supplying a second processing liquid for oxidation treatment to the surface of the substrate to be treated, which is rotated by the rotating body, in a manner that is continuous with the etching treatment by supplying the first processing liquid. It has, The first processing liquid supply unit is, A processing liquid holding part that can hold processing liquid between itself and the substrate when it approaches the substrate held by the rotating body, A lifting mechanism for raising and lowering the processing liquid holding section relative to the substrate, The heating section of the processing liquid holding section has a heater provided on the side opposite to the side facing the substrate, The processing liquid holding portion is formed with a discharge port for discharging the first processing liquid onto the substrate, It has, The substrate processing apparatus is characterized in that the second processing liquid supply unit supplies the second processing liquid to the substrate from the discharge port.

11. The first processing liquid supply unit is, A discharge port for discharging the first processing liquid onto the surface of the substrate to be processed, A heating unit for heating the first processing liquid supplied onto the surface of the substrate to be processed, It has, The substrate processing apparatus according to any one of claims 1 to 8, characterized in that the first processing liquid supply unit discharges the first processing liquid from the discharge port while the heating unit heats the first processing liquid on the surface to be processed.

12. The first processing liquid supply unit has a lifting mechanism that raises and lowers the heating unit relative to the substrate, Furthermore, it has a control unit that controls the first processing liquid supply unit and the second processing liquid supply unit, The control unit, The first processing liquid supply unit is controlled to discharge the first processing liquid from the discharge port, while the heating unit is brought closer to the substrate, thereby heating the first processing liquid and performing the etching process. The first processing liquid supply unit and the second processing liquid supply unit are controlled to move the heating unit away from the substrate in conjunction with the etching process, and to discharge the second processing liquid from the first supply nozzle toward the center of the surface to be processed on the substrate. The substrate processing apparatus according to claim 11.

13. The substrate is held and rotated by a rotating body. Etching is performed by supplying a first processing solution for etching to the surface of the substrate to be processed, which is rotated by the aforementioned rotating body. Following the etching process, a second processing solution for oxidation is supplied from a first supply nozzle toward the center of the surface to be processed on the substrate, which is rotated by the rotating body, and supplied from a second supply nozzle toward the outer circumference of the surface to be processed on the substrate, which is rotated by the rotating body, thereby performing an oxide film formation process. A substrate processing method characterized by the following:

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