Plasma-heated window multi-zone cooling

Abstract

SOLUTION: To provide a substrate processing system that includes a multi-zone cooling device that provides cooling to all or substantially all of the windows in a substrate processing chamber, and includes one or more plenums for covering all or substantially all of the windows in the substrate processing chamber, including under an energy source for a transformer-coupled plasma in the substrate processing chamber, and in which one or more air amplifiers and associated conduits feed air into the one or more plenums to provide airflow to the windows, and the conduits are connected to plenum inlets at various distances from the center to direct airflow across the windows, thus addressing hot center, hot middle, and hot edge conditions depending on the process being performed in the chamber, and the one or more plenums include a central air inlet for directing air to the center of the window to address hot center conditions.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Cross - Reference to Related Applications This application claims the benefit of priority to U.S. Patent Application Publication No. 15 / 814,139, filed on November 15, 2017. The entire disclosure of the application referenced above is incorporated herein by reference.

[0002] The present disclosure relates to a substrate processing system, and more particularly, to cooling of a chamber window in a substrate processing system, and even more particularly, to air circulation for cooling of a chamber window in a substrate processing system. Even more particularly, the present disclosure relates to a plenum structure and related apparatus for cooling a chamber window in a substrate processing system.

Background Art

[0003] The description of the background art provided herein is for the purpose of generally presenting the context of the present disclosure. The achievements of the inventors named herein are not, in the context described in this "background art", and in aspects of the description that cannot be regarded as prior art at the time of filing, recognized as prior art to the present disclosure, either explicitly or implicitly.

[0004] A substrate processing system can be used to perform etching and / or other processing of a substrate such as a semiconductor wafer. The substrate can be configured on a pedestal within a processing chamber of the substrate processing system. For example, during etching in a plasma etcher, a gas mixture containing one or more precursors is introduced into the processing chamber, and plasma is irradiated to etch the substrate.

[0005] As substrate processing technology advances and processes move below 10nm, the demand for high-density substrate processing chambers is increasing. This necessitates higher-power trans-coupled plasma (TCP) than ever before. For example, processes such as 3D NAND mask apertures utilize high-bias (>2500 watts) TCP with a narrow ion angular distribution. Other examples, such as chamber conditioning and photoresist trimming, may require high-pressure, high-power (>3000 watts) TCP to deliver a sufficiently large volume of high-energy ion flux to the substrate surface, thereby reducing process time.

[0006] One consequence of such high-power, high-density processes is that high-energy ion fluxes impact not only the substrate but also the ceramic / dielectric windows beneath the TCP coils. Such impacts will heat the windows. Depending on the process used, different parts of the windows may be exposed to extremely high temperatures at different times. Air circulation systems help to cool parts of the windows. However, due to variations in the processes that may be used, some parts of the windows may receive a large amount of heat, while the air circulation system does not provide sufficient cooling. As a result, there is a significant risk that the windows may crack, damaging the chamber and rendering the expensive equipment inoperable until repairs are completed.

[0007] Attempts have been made to facilitate wider air circulation across windows to promote more uniform temperatures (or at least fewer hot spots) and address process conditions that can lead to so-called central high temperatures, mid-range high temperatures, or edge high temperatures. However, until now, such attempts have made the window area more susceptible to extreme temperature differences, posing a risk of damage to the window and / or chamber.

[0008] It would be desirable to provide a multi-zone cooling system that better addresses hot spots within the dielectric window while the substrate processing chamber is in use. [Overview of the Initiative]

[0009] In one embodiment, the substrate processing system includes a multizone cooling system that provides cooling to all or substantially all of the windows within the substrate processing chamber. In one embodiment, the system includes one or more plenums for covering all or substantially all of the windows within the substrate processing chamber, including one below the energy source for the transformer-coupled plasma within the substrate processing chamber.

[0010] In one embodiment, one or more air amplifiers and associated conduits supply air to one or more plenums, thereby supplying airflow to a window. In one embodiment, the conduits are connected to plenum inlets at various distances from the central part, guiding air throughout the window and thus addressing central high temperature, intermediate high temperature, and edge high temperature conditions depending on the process being carried out in the chamber. In one embodiment, the plenum includes a central air inlet for guiding air to the central part of the window to address the central high temperature condition.

[0011] In one embodiment, one or more plenums cover all or substantially all of the window, so that some of the conduits connected to the air amplifier can be moved toward the outer edge to address so-called “edge temperature” conditions that may occur during certain types of processes.

[0012] In one embodiment, one or more air amplifiers can be controlled separately. In one embodiment, separate control is provided by one or more separate valves for each conduit. There may be low-flow valves and high-flow valves. In one embodiment, separate control is provided by on / off control of the air amplifiers.

[0013] In one embodiment, the lower plenum configuration, either alone or in combination with the positioning of the inlet on the top surface of the plenum, provides various flow configurations.

[0014] Further areas of application of this disclosure will become apparent from the "Modes for Carrying Out the Invention," the "Claims," ​​and the drawings. The "Modes for Carrying Out the Invention" and specific examples are for illustrative purposes only and are not intended to limit the scope of the disclosure.

[0015] This disclosure will be more fully understood from the detailed description and the accompanying drawings.

Brief Description of the Drawings

[0016] [Figure 1] FIG. 1 is a functional block diagram of an example of a substrate processing chamber including a plenum and one or more air amplifiers according to one aspect of the present disclosure.

[0017] [Figure 2] FIG. 2 is a conceptual diagram of an example of an energy source according to one aspect of the present disclosure.

[0018] [Figure 3] FIG. 3 is a functional block diagram of an example of a substrate processing chamber including a plenum, one or more air amplifiers, and a central air inlet according to one aspect of the present disclosure.

[0019] [Figure 4A] FIG. 4A is a three-dimensional view of an example of a substrate processing chamber including a plenum and one or more air amplifiers according to one aspect of the present disclosure. [Figure 4B] FIG. 4B is a three-dimensional view of an example of a substrate processing chamber including a plenum and one or more air amplifiers according to one aspect of the present disclosure.

[0020] [Figure 5A] FIG. 5A is a drawing of a plan view of a central air inlet according to one aspect of the present disclosure. [Figure 5B] FIG. 5B is a drawing of a side view of a central air inlet according to one aspect of the present disclosure. [Figure 5C] FIG. 5C is a drawing of a top view of a central air inlet according to one aspect of the present disclosure. [Figure 5D] FIG. 5D is a drawing of a bottom view of a central air inlet according to one aspect of the present disclosure.

[0021] [Figure 6] FIG. 6 is a top view of a plenum according to one aspect of the present disclosure.

[0022] [Figure 7] Figure 7 is a bottom view of a plenum according to one aspect of the present disclosure.

[0023] [Figure 8A] Figure 8A is a bottom view of a plenum according to one aspect of the present disclosure. [Figure 8B] Figure 8B is a bottom view of a plenum according to one aspect of the present disclosure.

[0024] [Figure 9A] Figure 9A is a bottom view of a plenum according to one aspect of the present disclosure. [Figure 9B] Figure 9B is a bottom view of a plenum according to one aspect of the present disclosure.

[0025] [Figure 10A] Figure 10A is a bottom view of a plenum according to one aspect of the present disclosure. [Figure 10B] Figure 10B is a bottom view of a plenum according to one aspect of the present disclosure.

[0026] [Figure 11] Figure 11 is a high-level view of a plenum structure according to one aspect of the present disclosure.

[0027] [Figure 12] Figure 12 is a high-level block diagram of a controller for operating an air amplifier and a valve according to one aspect of the present disclosure. [[ID=A5]]

[0028] [Figure 13] Figure 13 is a flowchart showing steps of an example of a method for operating an air amplifier and a valve according to one aspect of the present disclosure.

Mode for Carrying Out the Invention

[0029] In the drawings, reference numbers may be reused to identify similar and / or identical elements.

[0030] Figure 1 shows elements of a substrate processing system according to one aspect of the present disclosure. The substrate processing system of Figure 1 includes a chamber 1000 having a base 1010 and an electrostatic chuck (ESC) 1020, on which a substrate 1030 is shown. A plasma conduit 1040 leads to a showerhead 1050 to distribute a plasma processing gas into the chamber 1000.

[0031] A dielectric window 1100 covers the upper part of the chamber 1000. The dielectric window 1100 is formed from a dielectric material that transmits electromagnetic energy. Suitable dielectric materials include quartz and ceramics, and include, for example, aluminum nitride (AlN), aluminum oxide (Al2O3), or any other heat-resistant material with similar permeability properties.

[0032] The plenum 1200, positioned above the dielectric window 1100, is sized to cover all or substantially all of the dielectric window 1100. Depending on what best facilitates cooling, the plenum 1200 may be in direct contact with the dielectric window 1100, or it may be positioned slightly above the dielectric window 1100, for example, at about 0.25 mm to about 2 mm.

[0033] In one embodiment, the plenum 1200 has a top surface 1210 and side walls 1220, and one or more air inlets 1230 located on the top surface 1210. In one embodiment, one or more air outlets 1240 are provided. These outlets can be located anywhere on the top surface 1210 (for example, in the middle of the plenum 1200 or on one side) or in one or more locations on the side walls 1220.

[0034] (As shown more specifically in Figure 2) In one embodiment, an energy source 1300, comprising one or more coils 1310, 1320, is positioned above the plenum 1200, so that the plenum 1200 is sandwiched between the energy source 1300 and the window 1100. The energy source 1300 may include coils formed in any shape suitable for generating electromagnetic energy, such as concentric segments having faceted surfaces and formed with turns at angles to each other, solenoid-shaped conductors, toroid-shaped conductors, or a combination thereof.

[0035] The energy source 1300 can generate electromagnetic energy over a wide range of power, for example, about 50W to about 20kW in some embodiments, over about 2kW in one embodiment, about 3kW in another embodiment, and about 4.5kW in yet another embodiment. In one embodiment, the inner coil 1310 and the outer coil 1320 may be electrically coupled to each other. In other embodiments, multiple coils may be powered by multiple radio frequency (RF) generators. Although the energy source 1300 is shown as a multi-coil RF source, the energy source can be any device capable of generating electromagnetic energy to create inductively coupled plasma, such as, but not limited to, a radio frequency (RF) source, an electron cyclotron resonance (ECR), a microwave horn, a slot antenna, or a helicon source using a spiral antenna wrapped around a cylindrical window.

[0036] During operation, in one embodiment, the energy source 1300 transmits electromagnetic energy into the chamber 1000 via the dielectric window 1100 to convert at least a portion of the plasma processing gas into plasma. In a different embodiment, the plasma processing gas may come through an injector, or through a configuration such as the showerhead 1050 shown in Figure 1, or through any other suitable configuration for properly distributing the plasma processing gas into the chamber 1000. A portion of the electromagnetic energy is converted into thermal energy that can be absorbed by the dielectric window 1100. Specifically, some of the electromagnetic energy may be converted into heat depending on the dielectric properties of the dielectric window 1100, and a further portion of the electromagnetic energy may be absorbed by the dielectric window 1100 after the plasma processing gas has been ionized. For example, the plasma may heat the dielectric window 1100. Accordingly, the transmitted electromagnetic energy may increase the temperature of the dielectric window 1100. In one embodiment, the electromagnetic energy is anisotropic, so that different parts of the dielectric window 1100 receive different amounts of electromagnetic energy. It is believed that the heat induced in the dielectric window 1100 can be correlated with the amount of electromagnetic energy transmitted through the dielectric window 1100. For example, in one embodiment, the dielectric window 1100 can absorb more than about 40% of the electromagnetic energy as heat. The dielectric window 1100 can absorb at least about 0.4 kW of electromagnetic energy as heat, for example, more than about 1 kW in one embodiment, about 1.5 kW in another embodiment, or about 2.25 kW in yet another embodiment. Accordingly, high-temperature regions or hot spots may be formed in parts of the dielectric window 1100 that are exposed to a relatively large amount of heat induced by electromagnetic energy compared to other parts of the dielectric window 1100.

[0037] The substrate processing system can implement multiple processes that result in various temperature conditions in the dielectric window 1100. Some of these temperature conditions can cause large temperature discrepancies across the dielectric window 1100, potentially making the dielectric window 1100 more susceptible to cracking. To facilitate temperature monitoring in the dielectric window 1100, one or more temperature sensors 1400 may be placed inside the window 1100. Figure 1 shows four such temperature sensors 1400. However, the number of temperature sensors 1400 is not important. What matters is that there are enough sensors 1400 to measure the temperature of zones in the window 1100 where hot spots may occur.

[0038] In one embodiment, the plenum 1200 is formed from a passive material such as polytetrafluoroethylene (PTFE or "Teflon"), polyetheretherketone (PEEK), polyetherimide (PEI or "Artem"), ceramic, or any other electromagnetic energy permeable material, and other materials are also possible. As a result, the electromagnetic energy transmitted from the coils 1310 and 1320 can reach the dielectric window 1100 without interference from the plenum 1200 and without adversely affecting the plenum 1200.

[0039] In one embodiment, the substrate processing system includes one or more air amplifiers 1500, with associated conduits 1550 connected to an air inlet 1230. Figure 1 shows two such air amplifiers 1500 and conduits 1550. The air inlet 1230 and conduits 1550 are positioned at various locations on the plenum top surface 1210, with the conduit / inlet pair on the left side of Figure 1 being closer to the edge of the dielectric window 1100, and the conduit / inlet pair on the right side of Figure 1 being closer to the middle of the dielectric window 1100. The respective positionings allow the conduit / inlet pair on the left side of Figure 1 to better address high-temperature conditions at the edge of the dielectric window 1100, while the conduit / inlet pair on the right side of Figure 1 to better address high-temperature conditions in the middle of the dielectric window 1100.

[0040] According to aspects of this disclosure, the air supplied through the plenum 1200 is a medium for providing cooling. It will be apparent to those skilled in the art that, in addition to the air amplifier 1500-plenum 1200 structure, other cooling mechanisms and cooling media may be used.

[0041] Figure 2 is a representative diagram of an example of an energy source 1300 according to one embodiment. In Figure 2, the energy source 1300 is shown to include coils 1310 and 1320. As stated above, other types of energy sources may be appropriate according to aspects of this disclosure.

[0042] Figure 3 shows elements of a substrate processing system similar to that shown in Figure 1. Instead of the air outlet 1240 located in the middle of the plenum 1200, there is an additional air inlet 1230, and an additional air amplifier 1800 connected to the air inlet 1230' via a conduit 1850.

[0043] The central air inlet 1230, also shown in Figure 4 below, along with the associated conduit and air amplifier structure, enables the handling of critical central high-temperature conditions detected by the temperature sensor 1400 during a particular process. In one embodiment, providing temperature sensors 1400 in multiple regions around the window 1100 can help detect hot spots in multiple regions. As newer processes may generate stronger hot spots in various locations, it is important to provide cooling across the entire surface of the window 1100. Extending the air inlet and associated conduit more broadly across the surface of the window 1100, facilitated by providing a plenum 1200 that extends substantially over the entire surface of the window 1100, results in improved cooling.

[0044] Figure 4A shows a three-dimensional view of a substrate processing system according to one aspect of the present disclosure. In Figure 4A, the positioning of coils 1310 and 1320 relative to the plenum 1200, specifically the interposition of the plenum 1200 between coils 1310 and 1320 and the dielectric window 1100, is more clearly visible. Two conduits 1550, 1550 and conduit 1850 address the intermediate and central high-temperature states of the dielectric window 1100.

[0045] Figure 4B shows a three-dimensional diagram of substrate processing according to one aspect of the present disclosure. In Figure 4B, four conduits 1550 supply air to different zones of the window 1100 via the plenum 1200. The leftmost and rightmost conduits 1550 in Figure 4B are positioned to address high-temperature conditions at the edges of the window 1100. The conduits 1550 in the middle of Figure 4B are positioned to address high-temperature conditions in the middle of the dielectric window 1100. The conduit 1850 addresses high-temperature conditions in the central part of the dielectric window 1100.

[0046] Air amplifiers for these various conduits may be placed on different sides of the substrate processing system, depending on where it makes sense to place the conduits. In addition, the number of conduits shown does not constitute a limitation. The plenum 1200 may have its lower side divided into sections to facilitate airflow to specific areas of the window 1100. In that case, additional air inlets and conduits may be provided to handle the airflow within each section. Even if the lower surface of the plenum 1200 is not divided into sections and simply has side walls with no other protrusions or extensions (for example, for reasons other than structural stability), additional air outlets and associated conduits and air amplifiers may be provided to further improve the airflow across the surface of the window 1100.

[0047] Figure 4 also shows a central air inlet 1850, which allows air to flow into the center of the window 1100, thereby addressing the central high-temperature conditions during a particular process. With the plenum configuration and arrangement around the RF coils rather than beneath them, and with the arrangement of RF coils in varying numbers and diameters across the window, it was impossible to achieve central cooling through the arrangement of a central air outlet. The plenum according to an aspect of this disclosure makes such arrangement of the central air inlet possible, thereby facilitating the handling of the central high-temperature conditions arising from a particular process.

[0048] Figures 5A to 5D show various diagrams of the central air inlet 1850 according to embodiments of this disclosure. The outer circumference of the central air inlet 1850 is circular, but this is not important for the ability to place the central air inlet 1850 on the plenum 1200. In addition, the inner circumference of the central air inlet 1850 in Figures 5A to 5D is square, but this is also not important. To address various cooling needs, the central air inlet 1850 may include outlet holes of various shapes in various locations.

[0049] Figures 6 and 7 show a top and bottom view of a plenum 1200 according to one aspect of the present disclosure, respectively. In Figure 5, the top surface 1210 of the plenum 1200 has an air inlet 1230 and an air outlet 1240. In Figure 6, the bottom surface 1250 of the plenum 1200 has an air inlet 1230 and an air outlet 1240, but also has an air outlet 1260 that supplies airflow into the interior of the plenum 1200 and across the dielectric window 1100.

[0050] In Figures 6 and 7, there are two air inlets, which may be connected to corresponding conduits and from there to corresponding air amplifiers. Additional air inlets may be connected to additional conduits and corresponding air amplifiers.

[0051] Figures 8A and 8B show bottom views of one plenum according to an embodiment of the present disclosure, similar to Figures 6 and 7. Figure 8B shows flow arrows indicating airflow considering the positioning of the air outlet.

[0052] Figures 9A and 9B show bottom views of another plenum according to an embodiment of the present disclosure, in which the air outlet is located in a different position than in Figures 8A and 8B. Figure 9B shows flow arrows indicating the airflow considering the positioning of the air outlet.

[0053] Figures 10A and 10B show bottom views of yet another plenum according to an aspect of the present disclosure, in which the air outlets are located in a different position than those in Figures 7 and 8B, and Figures 9A and 9B. Unlike these figures, Figures 10A and 10B have two air outlets 1222 and 1224 on the side wall 1220. Figure 10B shows flow arrows 1226 and 1228 indicating the airflow considering the positioning of the air outlets.

[0054] Various configurations of the plenum 1200 have been shown and described. Regarding assembly, the plenum 1200 itself can be formed as a single unit or as multiple segments that can be assembled together. In the case of a circular plenum, the segments can be wedge-shaped, arc-shaped, or circumferential.

[0055] Figures 1 and 3 show the structure of a single plenum 1200 that covers substantially the entire upper surface of the dielectric window 1100. Figures 6, 7, 8A, 8B, 9A, 9B, 10A, and 10B also show a single plenum structure. According to aspects of this disclosure, multiple plenums can cover substantially the entire upper surface. Figure 11 shows plenums 1200A, 1200B, 1200C, and 1200D that cover essentially the same surface as the plenum 1200 in the preceding figures. For the sake of simplicity in illustration, various air amplifier and coil structures are omitted in Figure 13.

[0056] In Figure 12, the controller 1600 controls the operation of the aforementioned air amplifiers 1550', 1550'''', 1550'''', and 1550'''' in relation to the airflow through the plenum 1200 according to an embodiment of the present disclosure. In one embodiment, the air amplifiers can be turned on and off as a group or individually. According to one embodiment, if the air amplifier has a motor configured to enable its operating modes, the operation of the air amplifier (e.g., low, medium, high) may be modulated.

[0057] Figure 12 also shows low-flow valves 1570', 1570'', 1570'''', and 1570'''' associated with corresponding air amplifiers 1550', 1550'', 1550'''', and 1550'''' according to one aspect of the present disclosure. In some types of air amplifiers, if a small amount of airflow is required selectively or more generally in a particular area due to a localized hot spot resulting from a particular process, one or more low-flow valves positioned between the associated air amplifier and the air source may control the amount of air entering the associated air amplifier and, therefore, the corresponding air inlet in the plenum 1200.

[0058] Figure 12 also shows high-flow valves 1580', 1580'', 1580'''', and 1580'''', also associated with the corresponding air amplifiers 1550', 1550'', 1550'''', and 1550'''', according to one aspect of the present disclosure. If a small amount of airflow is required selectively in a particular area due to a localized hot spot resulting from a particular process, or more generally, one or more of the high-flow valves positioned between the associated air amplifier and the air source may control the amount of air entering the associated air amplifier and, therefore, the corresponding air inlet in the plenum 1200.

[0059] By using low-flow and high-flow valves, varying amounts of air can be pumped into the plenum 1200 as needed, as indicated by the output of the temperature sensor 1400.

[0060] In one embodiment, the controller 1600 also controls the operation of the air source 1650 that supplies air to the air amplifier. In one embodiment, the controller 1600 does not need to be dedicated solely to controlling the operation of the airflow, but may instead control other aspects of the operation of the substrate processing chamber.

[0061] The airflow that an air amplifier can supply may vary depending on the required airflow, either alone or in combination with low-flow valves and / or high-flow valves, and thus may depend on the process or combination of processes being performed. In one embodiment, each air amplifier can supply a suitable airflow having a pressure of about 20 psig to about 100 psig, for example, about 25 psig to about 80 psig in one embodiment, about 30 psig in another embodiment, or about 50 psig in yet another embodiment, when pressurized air is supplied. The air amplifier can supply a suitable amount of cooling air 70 at a rate of at least about 20 cfm, for example, about 20 cfm to about 3,000 cfm in one embodiment, about 25 cfm to about 900 cfm in another embodiment, about 30 cfm to about 230 cfm in yet another embodiment, or about 125 cfm to about 230 cfm in yet another embodiment.

[0062] Figure 13 is a flowchart illustrating the control of airflow within a substrate processing system according to an embodiment of the present disclosure. Control begins at 1700. At 1710, a temperature sensor 1400 detects the temperature of various zones of the window 1100. As previously stated, different temperature sensors may provide temperature information for different zones of the window. In one embodiment, a controller 1600 receives temperature information for the central region, intermediate region, and edge region to confirm the expected high temperatures in the central, intermediate, and edge regions.

[0063] At 1720, if all temperatures are at their target values, monitoring simply continues. If any temperature exceeds the target value, at 1730, the controller 1600 operates to supply airflow to the plenum 1200. Again, as previously stated, the controller 1600 performs this operation by either modulating the operation of one or more of the air amplifiers, or by controlling one or more low-flow or high-flow valves that supply air to the air amplifiers, thereby providing airflow to the plenum.

[0064] At 1740, the temperature sensor 1400 provides temperature information to the controller 1600, which then at 1750 checks whether the temperature of any of the target zones exceeds the target, for example, by more than 1°C. If not, the temperature continues to be monitored. In one embodiment, the controller 1600 may operate to limit or shut off one or more of the previously activated air amplifiers. If any of the measured temperatures are still too high, at 1760, the controller 1600 operates to adjust the flow rates among the air amplifiers.

[0065] With respect to this disclosure, there is no special requirement that the number of air amplifiers be equal to the number of air inlets. In one embodiment, depending on the process being performed, multiple air inlets may share the same air amplifier. Similarly, there is no special requirement that the number of air inlets be equal to the number of air outlets. Any combination of the number of air amplifiers, air inlets, and air outlets is permissible, in particular, due to the plenum's ability to supply airflow directly to these areas, as enabled by the plenum disclosed herein, to generate sufficient airflow to address hotspots at any location on the window 1100 surface, including the area below the RF coil.

[0066] The foregoing description is essentially illustrative and is not intended to limit the Disclosure, its application, or its use. The broad teachings of the Disclosure can be realized in various ways. Therefore, although the Disclosure includes certain examples, the true scope of the Disclosure should not be limited in this way, as other modifications will become apparent when considering the drawings, specification, and the claims below. As used herein, the phrase "at least one of A, B, and C" should be interpreted as meaning a logic using non-exclusive OR (A OR B OR C) and not as "at least one of A, at least one of B, and at least one of C." It should be understood that one or more steps in the Method may be performed in a different order (or simultaneously) without altering the principles of the Disclosure.

[0067] The terms “substantially” and “about” may be used herein to describe the degree of inherent uncertainty that may arise from any quantitative comparison, value, measurement, or other expression. These terms are also used herein to describe the extent to which a quantitative expression may deviate from the stated standard without altering the fundamental function of the subject matter in question.

[0068] In some implementations, the controller is part of a system that may be part of the examples described above. Such a system may comprise a semiconductor processing apparatus including processing tools, chambers, processing platforms, and / or specific processing components (such as wafer pedestals and gas flow systems). These systems may be incorporated into electronics for controlling pre-processing, in-processing, and post-processing operations of semiconductor wafers or substrates. The electronics may be referred to as the “controller” and may control various components or sub-components of the system. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein, including the supply of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position and work settings, loading and unloading of wafers to and from tools and other transport tools connected to or interfaced with a particular system, and / or load locks.

[0069] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software, which receives and issues instructions, controls operations, enables cleaning operations, and enables endpoint measurements. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions are instructions transmitted to the controller in the form of various individual settings (or program files) that define work parameters for performing a particular process on or for a semiconductor wafer, or for a system. In some embodiments, work parameters may be part of a recipe defined by a process engineer to implement one or more processing steps when fabricating one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0070] In some implementations, the controller may be part of, or coupled to, a computer that is built into, coupled to, networked to, or a combination thereof within the system. For example, the controller may reside in the “cloud” or be all or part of a fab host computer system, thereby enabling remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, investigate the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, modify parameters of the current operation, set subsequent processing steps for the current operation, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network that may include a local network or the internet. The remote computer may include a user interface that allows input or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in a data format that specify parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller interfaces with or is configured to control. Therefore, as described above, the controllers may be distributed, for example, by comprising one or more individual controllers that are networked with one another and aimed at a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes may be one or more integrated circuits on a chamber that are in communication with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer), and these combined control the processes in the chamber.

[0071] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.

[0072] As described above, depending on the process steps performed by the tool, the controller may communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, the main computer, another controller, or tools used for material handling to load and unload wafer containers between tool locations and / or load ports within the semiconductor manufacturing plant. Furthermore, this disclosure can be implemented in the following forms. [Form 1] A substrate processing system, A processing chamber having a window covering the upper part of the processing chamber, A first coil is positioned above the window and generates electromagnetic energy for ionizing the plasma processing gas in the processing chamber, A first air amplifier that generates airflow during operation, At least one plenum positioned below the first coil and above the window, the at least one plenum having side walls and a top surface having substantially the same area as the upper surface area of ​​the window, and the top surface having a first air inlet to receive the airflow from the air amplifier and distribute the air across the window between the side walls of the at least one plenum, to reduce hot spots in the area of ​​the window below the first coil, A plurality of temperature sensors, each of which measures the temperature of a corresponding portion of the window and outputs the detected temperature, A controller that controls the first air amplifier in response to the detected temperature to generate the airflow, A substrate processing system equipped with the following features. [Form 2] A substrate processing system according to Embodiment 1, wherein the at least one plenum is sized to cover the entire upper surface of the window. [Form 3] A substrate processing system according to Embodiment 1, wherein the at least one plenum comprises a plurality of plenums that cover substantially all of the upper surface of the window. [Form 4] A substrate processing system according to Embodiment 3, wherein the plurality of plenums cover the entire upper surface of the window. [Form 5] A substrate processing system according to Embodiment 1, wherein the first air inlet is located approximately in the center of the top surface of the plenum. [Form 6] A substrate processing system according to Embodiment 5, wherein the plenum has a second air inlet at the edge of the top surface of the plenum, and the substrate processing system further comprises a second air amplifier that supplies airflow through the second air inlet to reduce one or more hot spots at the edge of the window. [Form 7] A substrate processing system according to Embodiment 6, wherein the plenum has a third air inlet in the middle portion of the top surface of the plenum, located between the center and the edge of the top surface, and the substrate processing system further comprises a third air amplifier that supplies airflow through the third air inlet to reduce hot spots in the middle portion of the window. [Form 8] A substrate processing system according to Embodiment 5, wherein the plenum has an additional air inlet at the edge of the top surface of the plenum, and the first air amplifier supplies airflow to both the first air inlet and the additional air inlet. [Form 9] A substrate processing system according to Embodiment 5, further comprising an additional air amplifier, wherein the plenum has an additional air inlet, the first air amplifier supplies airflow to the first air inlet, and the additional air amplifier supplies airflow to the additional air inlet. [Form 10] A substrate processing system as described in Embodiment 1, A substrate processing system further comprising a second coil positioned above the plenum, wherein the second coil supplies electromagnetic energy to ionize the plasma processing gas in the processing chamber. [Form 11] A substrate processing system according to Embodiment 10, wherein the first coil and the second coil are electrically coupled to each other. [Form 12] A substrate processing system according to Embodiment 1, wherein the plenum has a first air outlet on its top surface. [Form 13] A substrate processing system according to Embodiment 1, wherein the plenum has a first air outlet in one of its side walls. [Form 14] A substrate processing system according to Embodiment 1, further comprising an air source and a first valve and a second valve connected to the air source, wherein a first air amplifier is connected to the air source via the first valve and the second valve, and a controller controls the air source, with the first valve and the second valve supplying an airflow, the first valve supplying a relatively small airflow, and the second valve supplying a relatively large airflow. [Form 15] A substrate processing system, A processing chamber having a window covering the upper part of the processing chamber, A plurality of coils are positioned above the aforementioned window to generate electromagnetic energy and ionize the plasma processing gas in the processing chamber, Multiple air amplifiers for generating airflow, At least one plenum positioned below the plurality of coils and above the window, the at least one plenum having side walls and a top surface having substantially the same area as the area of ​​the upper surface of the window, and the top surface having a plurality of air inlets to receive the airflow, the plurality of air amplifiers, and distribute the airflow across the window between the side walls of the at least one plenum, to reduce one or more hot spots in one or more areas of the window below the plurality of coils, A plurality of temperature sensors, each of which measures the temperature of a corresponding portion of the window and outputs the detected temperature, A controller that controls the plurality of air amplifiers in response to the detected temperature, A substrate processing system equipped with the following features. [Form 16] A substrate processing system according to Embodiment 15, wherein the at least one plenum is sized to cover the entire upper surface of the window. [Form 17] A substrate processing system according to Embodiment 15, wherein the at least one plenum comprises a plurality of plenums that cover substantially all of the upper surface of the window. [Form 18] A substrate processing system according to Embodiment 17, wherein the plurality of plenums cover the entire upper surface of the window. [Form 19] A substrate processing system according to Embodiment 15, wherein the number of the plurality of air amplifiers is equal to the number of the plurality of air inlets. [Form 20] A substrate processing system according to Embodiment 15, wherein the plurality of air amplifiers are fewer than the plurality of air inlets, and two or more of the plurality of air inlets share an air amplifier. [Form 21] A substrate processing system according to Embodiment 15, wherein the plurality of coils are electrically coupled to one another. [Form 22] A substrate processing system according to Embodiment 15, further comprising an air source and a plurality of valve pairs connected to the air source, wherein each of the plurality of air amplifiers is connected to the air source via one of the plurality of valve pairs, and the controller controls the air source and the plurality of valve pairs to supply the airflow, with a first valve of each of the plurality of valve pairs supplying a relatively small airflow and a second valve of each of the plurality of valve pairs supplying a relatively large airflow.

Claims

1. A substrate processing system, A first coil is positioned above the window of the processing chamber and is used to generate plasma within the processing chamber. First, second, and third air amplifiers for generating airflow, A plenum positioned below the first coil and above the window, wherein a first air inlet is positioned approximately in the center of the top surface of the plenum to receive the airflow from the first air amplifier, and the first air inlet comprises a plurality of holes in the side wall of the plenum for distributing the air across the window to reduce hot spots in the central part of the window below the first coil, and the plenum further comprises, A second air inlet at the edge of the top surface of the plenum for receiving the airflow from the second air amplifier to reduce hot spots at the edge of the window, A plenum comprising: a third air inlet in the middle portion of the top surface of the plenum, between the center and the edge of the top surface of the plenum, for receiving the airflow from the third air amplifier to reduce hot spots in the middle portion of the window; A substrate processing system comprising:

2. A substrate processing system according to claim 1, A substrate processing system in which the plenum is sized to cover the entire upper surface of the window.

3. A substrate processing system according to claim 1, A substrate processing system comprising a plurality of plenums that cover the entire upper surface of the window.

4. A substrate processing system according to claim 1, A substrate processing system wherein the plenum has an additional air inlet at the edge of the top surface of the plenum, and the first air amplifier supplies airflow to both the first air inlet and the additional air inlet.

5. A substrate processing system according to claim 1, further, Equipped with an additional air amplifier, A substrate processing system wherein the plenum has an additional air inlet, the first air amplifier supplies airflow to the first air inlet, and the additional air amplifier supplies airflow to the additional air inlet.

6. A substrate processing system according to claim 1, further, A substrate processing system comprising a second coil coupled to the first coil and positioned above the plenum.

7. A substrate processing system according to claim 1, A substrate processing system wherein the plenum has a first air outlet on its top surface.

8. A substrate processing system according to claim 1, The plenum is a substrate processing system having a first air outlet in one of its side walls.

9. A substrate processing system according to claim 1, further, A substrate processing system comprising an air source and a first valve and a second valve connected to the air source, wherein the first air amplifier is connected to the air source via the first valve and the second valve, and a controller controls the air source and the first valve and the second valve to supply the airflow, the first valve and the second valve supplying different airflows.

10. A substrate processing system according to claim 1, further, A plurality of temperature sensors, each of which measures the temperature of a corresponding portion of the window and outputs the detected temperature. A controller that controls the first, second, and third air amplifiers to generate the airflow based on the detected temperature, A substrate processing system comprising:

11. A substrate processing system, A coil for generating plasma within the processing chamber is located above the window of the processing chamber, Multiple air amplifiers for generating airflow, A plenum positioned below the coil and above the window, A first air inlet is located approximately in the center of the top surface of the plenum to receive the airflow from the first air amplifier of the plurality of air amplifiers, and includes a plurality of holes for reducing hot spots in the center of the window, A second air inlet at the edge of the top surface of the plenum for receiving the airflow from the second air amplifier of the plurality of air amplifiers in order to reduce hot spots at the edge of the window, A third air inlet in the middle portion of the top surface of the plenum, between the central portion and the edge of the top surface of the plenum, for receiving the airflow from the third air amplifier of the plurality of air amplifiers in order to reduce hot spots in the middle portion of the window, A substrate processing system comprising:

12. A substrate processing system according to claim 11, A substrate processing system in which the plenum is sized to cover the entire upper surface of the window.

13. A substrate processing system according to claim 11, A substrate processing system comprising a plurality of plenums that cover the entire upper surface of the window.

14. A substrate processing system according to claim 11, A substrate processing system wherein the top surface of the plenum is provided with a plurality of air inlets for receiving the airflow from the plurality of air amplifiers and distributing the airflow across the window in the side wall of the plenum, so as to reduce one or more hot spots in one or more regions of the window below the coil.

15. A substrate processing system according to claim 14, A substrate processing system in which the number of the plurality of air amplifiers is equal to the number of the plurality of air inlets.

16. A substrate processing system according to claim 14, A substrate processing system in which the plurality of air amplifiers are fewer than the plurality of air inlets, and two or more of the plurality of air inlets share an air amplifier.

17. A substrate processing system according to claim 11, A substrate processing system wherein the plenum has a first air outlet on its top surface.

18. A substrate processing system according to claim 11, The substrate processing system comprises a plenum having a first air outlet in the side wall of the plenum.

19. A substrate processing system according to claim 11, further, A substrate processing system comprising an air source and a plurality of valve pairs connected to the air source, each of the plurality of air amplifiers connected to the air source via one of the plurality of valve pairs, and a controller controlling the air source and the plurality of valve pairs to supply the airflow.

20. A substrate processing system according to claim 19, A substrate processing system in which each of the plurality of valve pairs has a first valve that supplies a relatively small amount of airflow, and each of the plurality of valve pairs has a second valve that supplies a relatively large amount of airflow.

21. A substrate processing system according to claim 11, further, A plurality of temperature sensors, each of which measures the temperature of a corresponding portion of the window and outputs the detected temperature. A controller that controls the plurality of air amplifiers based on the detected temperature, A substrate processing system comprising:

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