Thermal management system, vehicle

Abstract

To provide a heat management system which can properly perform both heat radiation management and heat creation management, and to provide a vehicle.SOLUTION: A heat management system includes a power semiconductor 11 (a heat generation part). The power semiconductor 11 has heat radiation paths 30 and 40. The heat radiation path 30 is configured to transmit heat from the power semiconductor 11 to portions other than the power semiconductor 11. An amount of heat radiated from the power semiconductor 11 through the heat radiation path 40 increases in response to increase of the temperature of the power semiconductor 11.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a heat management system and a vehicle.

Background Art

[0002] International Publication No. 2005 / 071824 (Patent Document 1) discloses a technique for cooling a semiconductor device by controlling the temperature of a refrigerant circulating through a flow path provided in a housing of the semiconductor device.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

[0007] According to another form of this disclosure, a vehicle equipped with the above system is provided. [Effects of the Invention]

[0008] According to this disclosure, it becomes possible to properly manage both heat dissipation and heat generation. [Brief explanation of the drawing]

[0009] [Figure 1] This figure shows a thermal management system according to an embodiment of the present disclosure. [Figure 2] This diagram shows the state of the thermal management system when the heat-generating part is at a high temperature. [Figure 3] This diagram shows the state of the thermal management system when the heat-generating part is at a low temperature. [Figure 4] This figure shows an example of a planar structure for the second heat dissipation path. [Figure 5] This figure shows a modified example of the planar structure of the second heat dissipation path. [Figure 6] This figure shows a vehicle to which the heat dissipation structure shown in Figure 1 is applied. [Modes for carrying out the invention]

[0010] Embodiments of this disclosure will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and their descriptions will not be repeated. In the drawings used below, of the mutually orthogonal X, Y, and Z axes, the Z axis indicates the thickness direction of the substrate. Hereinafter, the direction indicated by the arrows on the X, Y, and Z axes will be denoted by "+", and the opposite direction by "-". With respect to the two main surfaces (front and back surfaces) of a plate-shaped member (or a laminate thereof), the surface in the +Z direction may be referred to as the "first surface", and the surface in the -Z direction may be referred to as the "second surface".

[0011] Figure 1 shows a thermal management system according to this embodiment. In Figure 1, the -Z direction corresponds to the direction in which gravity acts (vertically downward). Referring to Figure 1, this thermal management system comprises a semiconductor power device 10 including a power semiconductor 11 (heat-generating part), and a heat dissipation path 30 (first heat dissipation path) and a heat dissipation path 40 (second heat dissipation path) for the power semiconductor 11.

[0012] The semiconductor power device 10 includes a power semiconductor 11, a laminated substrate in which substrates 13 to 15 are stacked in the Z direction, and a cooler 16. From the -Z side, the substrates are stacked in the order of substrate 15, substrate 14, and substrate 13. Each of the substrates 13 and 15 is, for example, a metal substrate. Each of the substrates 13 and 15 may be a copper plate. Substrate 14 is a ceramic insulating substrate. Examples of ceramic insulating substrates include an alumina substrate, an aluminum nitride substrate, and a silicon nitride substrate. The above laminated substrate is, for example, an insulating heat dissipation circuit board having a structure in which a ceramic substrate is sandwiched between two metal substrates. The ceramic substrate and the two metal substrates may be joined and integrated by active metal bonding (AMB) or direct bonding (DCB).

[0013] The substrate 13 includes an electronic circuit, and a power semiconductor 11 is mounted on the first surface of the substrate 13 via a bonding material 12. Examples of bonding materials 12 include solder and conductive adhesives. The semiconductor power device 10 is configured to perform power conversion and / or control using the electronic circuit including the power semiconductor 11. Examples of power semiconductors 11 include IGBTs, MOSFETs, or power transistors such as bipolar power transistors. Examples of semiconductor materials include Si, SiC, and GaN.

[0014] A cooler 16 is bonded to the second surface of the substrate 15. Examples of bonding materials for the cooler 16 include solder and grease. The cooler 16 is configured to transfer heat received from the laminated substrate to the heat dissipation path 30. The cooler 16 is made of, for example, metal. The cooler 16 has a plurality of protrusions that project toward the heat dissipation path 30.

[0015] The heat dissipation path 30 comprises a pipe 31 and an insulating material 33. The pipe 31 is, for example, a cylindrical member made of metal. The insulating material 33 is provided on the outer surface of the pipe 31 on the -Z side. This suppresses heat exchange on the -Z side of the pipe 31. However, it is not limited to this, and a heat dissipation material may be provided instead of the insulating material 33 to promote heat dissipation on the -Z side of the pipe 31. The pipe 31 houses a heat transfer medium 30a and cooling fins 32 inside the pipe. The heat transfer medium 30a flows inside the pipe 31, for example, on the +Y side. The outer surface of the pipe 31 on the +Z side is in contact with each protrusion of the cooler 16. Heat from the cooler 16 is transferred to the heat transfer medium 30a and cooling fins 32 via the pipe 31. Examples of heat transfer medium 30a include water, antifreeze, organofluorine compounds, carbon dioxide, and ammonia.

[0016] The cooling fins 32 are, for example, metal plates (corrugated fins) bent into a waveform. The cooling fins 32 are formed so as to go back and forth between the inner surface on the +Z side and the inner surface on the -Z side of the tube body 31. With such a shape, heat exchange between the cooling fins 32 and the heat medium 30a is promoted. The cooling fins 32 are in contact with the portion of the inner surface on the +Z side of the tube body 31 that faces the protrusion of the cooler 16. Thereby, heat exchange between the cooling fins 32 and the cooler 16 is promoted.

[0017] The heat dissipation path 30 is configured to transfer heat from the power semiconductor 11 to other components (components other than the power semiconductor 11). Hereinafter, the above-mentioned other components that perform heat exchange with the power semiconductor 11 through the heat dissipation path 30 are referred to as "target components". In this embodiment, the heat medium 30a flows through the flow path formed by the tube body 31. The heat medium 30a performs heat exchange with each of the power semiconductor 11 and the target component (not shown in FIG. 1). Although details will be described later, an example of the target component is an in-vehicle battery (see FIG. 6).

[0018] The heat management system shown in FIG. 1 further includes a container 20 capable of heat exchange with the power semiconductor 11. The container 20 includes a metal part 21 (first metal part), a resin part 22, and a metal part 23 (second metal part). The metal part 21 is in contact with the substrate 13. The metal part 21 performs heat exchange with the power semiconductor 11 via the substrate 13 and the bonding material 12. The metal part 21, the resin part 22, and the metal part 23 are connected and seal the internal space. The resin part 22 is located between the metal part 21 and the metal part 23. The container 20 houses a thermal expansion material M1, a high thermal conductivity material M2, and a low thermal conductivity material M3 in the sealed internal space. The thermal conductivity of the high thermal conductivity material M2 is higher than that of the low thermal conductivity material M3. The thermal expansion material M1 has a higher thermal expansion rate than each of the low thermal conductivity material M3 and the high thermal conductivity material M2.

[0019] The thermal expansion material M1 changes volume within the operating temperature range of the power semiconductor 11. The thermal expansion material M1 may have a melting point within the operating temperature range of the power semiconductor 11. For example, the thermal expansion material M1 is in a solid state at room temperature and liquefies as the temperature of the power semiconductor 11 increases. The volume of the thermal expansion material M1 increases upon liquefaction. An example of the thermal expansion material M1 is wax. The high thermal conductivity material M2 maintains high fluidity within the operating temperature range of the power semiconductor 11. The high thermal conductivity material M2 may be in a liquid or semi-solid state within the operating temperature range of the power semiconductor 11. The thermal conductivity of the high thermal conductivity material M2 may be 50 W / m·K or more and 100 W / m·K or less, or about 80 W / m·K. Examples of the high thermal conductivity material M2 include liquid sodium and thermal grease. The low thermal conductivity material M3 maintains high fluidity within the operating temperature range of the power semiconductor 11. The low thermal conductivity material M3 may be in a gaseous state within the operating temperature range of the power semiconductor 11. The thermal conductivity of the low thermal conductivity material M3 may be between 0.01 W / m·K and 1.00 W / m·K, or approximately 0.02 W / m·K. Examples of low thermal conductivity material M3 include air, nitrogen gas, and argon gas. The separation of the thermal expansion material M1, the high thermal conductivity material M2, and the low thermal conductivity material M3 is promoted and mixing is suppressed as they enter different states (solid / liquid / gas).

[0020] The heat dissipation path 40 includes metal members 41 and 42 and a heat conductivity variable section 43. The metal member 41 is, for example, a metal case and functions as a heat dissipation section that promotes heat dissipation. As will be described in detail later, an example of the metal member 41 is a case for automotive electronic equipment (see Figure 6). The semiconductor power device 10 is connected to the metal member 41 via the container 20. The semiconductor power device 10 is in contact with the metal section 21. The metal member 41 is in contact with the metal section 23. The resin section 22 is not in contact with either the semiconductor power device 10 or the metal member 41.

[0021] The metal member 42 is a metal member formed, for example, in a rod shape or a plate shape. The metal member 42 is in contact with the metal parts of the substrate 15, the cooler 16, the pipe body 31, and the container 20. The metal member 42 transmits the heat from the power semiconductor 11 to the thermally conductive variable part 43. The metal member 42 is connected to the metal member 41 via the thermally conductive variable part 43. The metal member 42 and the thermally conductive variable part 43 function as a heat conduction part that transmits the heat from the power semiconductor 11 to the metal member 41 (heat dissipation part). And the thermally conductive variable part 43 is configured to have a higher thermal conductivity in response to the temperature rise of the power semiconductor 11.

[0022] The thermally conductive variable part 43 includes the metal part 23 of the container 20. In the container 20, the metal part 21 is configured to transmit the heat generated by the power semiconductor 11 to the thermal expansion material M1. The thermal expansion material M1 contracts and expands according to the temperature of the power semiconductor 11. The high thermal conductivity material M2 and the low thermal conductivity material M3 move inside the container 20 in response to the contraction / expansion of the thermal expansion material M1.

[0023] Figure 2 shows the state of the thermal management system when the power semiconductor 11 is under high load. When the load on the power semiconductor 11 increases, the temperature of the power semiconductor 11 rises. As shown in Figure 2, the thermal expansion material M1 expands in response to the rising temperature of the power semiconductor 11. The force generated by the expansion of the thermal expansion material M1 causes the high thermal conductivity material M2 to move within the container 20 so that it is included in the variable thermal conductivity section 43, and the low thermal conductivity material M3 to move within the container 20 so that it is compressed and no longer included in the variable thermal conductivity section 43. The low thermal conductivity material M3 is pushed to the edge of the container 20. As a result, the thermal conductivity of the variable thermal conductivity section 43 increases, and the amount of heat dissipated from the power semiconductor 11 through the heat dissipation path 40 increases. Heat from the power semiconductor 11 is transferred to the metal member 41 via the metal member 42 and the variable thermal conductivity section 43 (high thermal conductivity material M2). By dissipating heat from the power semiconductor 11 through both the heat dissipation path 30 and 40, the cooling of the power semiconductor 11 is promoted. As described above, the thermal conductivity of the variable thermal conductivity section 43 increases in response to the rising temperature of the power semiconductor 11. Therefore, the amount of heat transferred from the power semiconductor 11 to the metal component 41 (heat dissipation section) increases as the temperature of the power semiconductor 11 rises. This promotes the cooling of the power semiconductor 11 when its temperature is high.

[0024] Figure 3 shows the state of the thermal management system when the power semiconductor 11 is under low load. When the load on the power semiconductor 11 is low, the temperature of the power semiconductor 11 also decreases. As shown in Figure 3, the thermal expansion material M1 contracts in response to the cooling of the power semiconductor 11. The force generated by the contraction of the thermal expansion material M1 causes the low thermal conductivity material M3 to expand and move within the container 20 so that it is included in the variable thermal conductivity section 43, while the high thermal conductivity material M2 moves within the container 20 so that it is no longer included in the variable thermal conductivity section 43. As a result, the thermal conductivity of the variable thermal conductivity section 43 decreases, making it difficult for heat to be transferred from the power semiconductor 11 to the metal member 41. Therefore, the amount of heat dissipated from the power semiconductor 11 through the heat dissipation path 40 is reduced. The variable thermal conductivity section 43 (low thermal conductivity material M3) may be insulated. The low thermal conductivity material M3 may also prevent heat dissipation from the power semiconductor 11 through the heat dissipation path 40. As the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 decreases, the amount of heat transferred from the power semiconductor 11 to the heat dissipation path 30 increases. This makes it easier to use the heat generated by the power semiconductor 11 to raise the temperature of the target component.

[0025] As described above, the power semiconductor 11 (heat-generating part) has multiple heat dissipation paths (heat dissipation paths 30 and 40). By transferring heat from the power semiconductor 11 to other parts (parts other than the power semiconductor 11) through the heat dissipation path 30, the heat generated by the power semiconductor 11 can be used to raise the temperature of the other parts. In addition, by simultaneously dissipating heat from the power semiconductor 11 through multiple heat dissipation paths, the total amount of heat dissipated by the power semiconductor 11 increases, making it easier to cool the power semiconductor 11. However, when heat is dissipated from the power semiconductor 11 through multiple heat dissipation paths, the amount of heat dissipated per path decreases. Therefore, when heat is dissipated from the power semiconductor 11 through the heat dissipation paths 30 and 40, the amount of heat transferred to other parts through the heat dissipation paths 30 is less than when heat is dissipated from the power semiconductor 11 through the heat dissipation path 30 alone. As a result, the temperature of other parts is less likely to rise.

[0026] Therefore, in the thermal management system according to this embodiment, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 increases in proportion to the temperature of the power semiconductor 11. That is, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 is less when the temperature of the power semiconductor 11 is lower than when the temperature of the power semiconductor 11 is higher (see Figures 2 and 3). When it becomes more difficult for the heat released by the power semiconductor 11 to be transferred to the heat dissipation path 40, the amount of heat transferred from the power semiconductor 11 to the heat dissipation path 30 increases. When the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 decreases, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 30 increases. Since the power semiconductor 11 and other parts (including the target component) are thermally connected through the heat dissipation path 30, when the temperature of the power semiconductor 11 is low, the temperature of the other parts is likely to be low as well. For this reason, heating (heat generation) of the other parts is likely to be required when the temperature of the power semiconductor 11 is low. In the above system, when the temperature of the power semiconductor 11 is low, the amount of heat transferred from the power semiconductor 11 to other parts through the heat dissipation path 30 can be increased, thereby promoting the temperature rise of the other parts. On the other hand, when the temperature of the power semiconductor 11 is high, there is a higher likelihood that cooling of the power semiconductor 11 will be required. In the above system, the amount of heat dissipated from the power semiconductor 11 through the heat dissipation path 40 increases in accordance with the temperature rise of the power semiconductor 11. As a result, when the temperature of the power semiconductor 11 is high, the total amount of heat dissipated from the power semiconductor 11 increases, and the cooling of the power semiconductor 11 is promoted. Thus, the above system makes it possible to appropriately manage both heat dissipation and heat generation.

[0027] In the thermal management system according to this embodiment, the thermal expansion material M1 displaces the high thermal conductivity material M2 and the low thermal conductivity material M3 in accordance with the temperature of the power semiconductor 11. The thermal expansion material M1 pulls or pushes each thermal conductivity material by contracting or expanding. When the variable thermal conductivity section 43 includes the high thermal conductivity material M2, the thermal conductivity of the variable thermal conductivity section 43 increases (see Figure 2), and when the variable thermal conductivity section 43 includes the low thermal conductivity material M3, the thermal conductivity of the variable thermal conductivity section 43 decreases (see Figure 3). In this configuration, since the high thermal conductivity material M2 and the low thermal conductivity material M3 move due to physical phenomena, electronic control and power supply are not required to move the high thermal conductivity material M2 and the low thermal conductivity material M3.

[0028] The container 20 shown in Figure 1 includes a metal part 21 (first metal part), a resin part 22, and a metal part 23 (second metal part). Generally, metals have high thermal conductivity, and resins have high thermal insulation properties. The presence of the metal part 21 in the container 20 facilitates the transfer of heat generated by the power semiconductor 11 to the thermal expansion material M1. This makes it easier for the thermal expansion material M1 to deform (contract and expand) in accordance with the temperature of the power semiconductor 11. Furthermore, the presence of the metal part 23 in the container 20 prevents the container 20 (the cylindrical body housing the thermal expansion material and each thermal conductive material) from hindering the heat conduction of the power semiconductor 11. In addition, the presence of the resin part 22 in the container 20 suppresses heat exchange between the thermal expansion material M1 and the outside air. If heat exchange between the thermal expansion material M1 and the outside air becomes dominant over heat exchange between the thermal expansion material M1 and the power semiconductor 11, the thermal expansion material M1 may not be in a state corresponding to the temperature of the power semiconductor 11. The resin part 22 suppresses heat exchange between the thermal expansion material M1 and the outside air, making it easier for the thermal expansion material M1 to enter a state corresponding to the temperature of the power semiconductor 11.

[0029] Figure 4 shows an example of the planar structure of the heat dissipation path 40 (second heat dissipation path). As shown in Figure 4, the heat dissipation path 40 may have a single rod-shaped metal member 42. The semiconductor power device 10, the metal member 42, the thermal conductivity variable part 43, and the metal member 41 may be connected in this order. However, the shape and number of each of the metal members 42 and the thermal conductivity variable part 43 can be changed as appropriate.

[0030] Figure 5 shows a modified example of the planar structure of the second heat dissipation path. As shown in Figure 5, the second heat dissipation path may have four plate-shaped metal members 42A to 42D. In this modified example, one end of each of the metal members 42A to 42D is connected to the semiconductor power device 10. The other ends of the metal members 42A, 42B, 42C, and 42D are connected to the metal member 41 via the thermal conductivity variable parts 43A, 43B, 43C, and 43D, respectively. Each of the thermal conductivity variable parts 43A to 43D has the same configuration as, for example, the thermal conductivity variable part 43 shown in Figure 1. Note that the configuration shown in Figure 5 may be modified by removing the metal members 42C, 42D and the thermal conductivity variable parts 43C, 43D. Alternatively, the configuration shown in Figure 5 may be modified by removing the metal members 42B, 42D and the thermal conductivity variable parts 43B, 43D.

[0031] Figure 6 shows a thermal management system 100a to which the heat dissipation structure shown in Figure 1 is applied. Referring to Figure 6, the thermal management system 100a is mounted on, for example, a vehicle 100. The vehicle 100 is an electric vehicle (xEV) configured to run on electricity discharged from a battery 200 (energy storage device), which will be described later. The vehicle 100 may be, for example, a BEV (battery electric vehicle) or a PHEV (plug-in hybrid vehicle).

[0032] The thermal management system 100a includes a first circuit 110, a second circuit 120, a third circuit 130, a condenser 140, a refrigeration cycle 150, a chiller 160, a five-way valve 310, and a reservoir tank (R / T) 320. The five-way valve 310 and the reservoir tank 320 are shared between the second circuit 120 and the third circuit 130. The condenser 140, the refrigeration cycle 150, and the chiller 160 are located between the first circuit 110 and the second circuit 120 and function as a heat transfer mechanism.

[0033] The first circuit 110 includes a pump 111, an electric heater 112, a three-way valve 113, a heater core 114, a reservoir tank (R / T) 115, and a radiator 118. The pump 111 circulates a heat transfer medium through the first circuit 110.

[0034] The five-way valve 310 has five ports P1 to P5. When P1 and P2 of the five-way valve 310 are connected, a second circuit 120 is formed, which includes flow paths 120a and 120b. Flow path 120a includes a pump 121 and a chiller 160. Flow path 120b includes a battery 200 and an electric heater 220. The pump 121 circulates a heat transfer medium to the second circuit 120. Ports P3 and P4 of the five-way valve 310 are connected to a reservoir tank 320 via flow paths 130b and 130a, respectively. When ports P3 and P4 are connected, a third circuit 130 is formed, which includes flow paths 130a and 130b. Flow path 130a includes an SPU (Smart Power Unit) 131, PCUs (Power Control Units) 132 and 134, a pump 133, and oil coolers (O / C) 135 and 136. Pump 133 circulates the heat transfer medium to the third circuit 130. Oil coolers 135 and 136 each cool the oil supplied to the vehicle 100's transaxle (T / A) by an electric oil pump (EOP). Port P5 of the five-way valve 310 is connected to the reservoir tank 320 via a passage 170a. The passage 170a includes the radiator 170.

[0035] The SPU131 functions as an on-board charger and discharger (charger and discharger) for the battery 200. However, it is not essential that the vehicle 100 has an external power supply function (e.g., V2H function). The SPU131 includes, for example, a power conversion circuit. The PCUs 132 and 134 are circuits that drive the Fr-MG (front motor) and Rr-MG (rear motor), respectively (not shown), using power supplied from the battery 200. Each MG corresponds to a motor that drives the vehicle 100. The torque output by each MG rotates the drive wheels of the vehicle 100 via a transaxle (T / A). The T / A functions as a power transmission mechanism. The battery 200 functions as a power storage device for driving. Each PCU may include a bidirectional inverter.

[0036] The refrigeration cycle 150 includes a compressor 151, an electric expansion valve 152, an evaporator 153, an evaporative pressure regulator (EPR) 154, and an electric expansion valve 155. A condenser 140 is connected to both the first circuit 110 and the refrigeration cycle 150 and functions as a heat exchanger. A chiller 160 is connected to both the refrigeration cycle 150 and the flow path 120a and functions as a heat exchanger. The air conditioning system installed in the vehicle 100 uses the first circuit 110 and the refrigeration cycle 150 to provide air conditioning (heating and cooling) inside the vehicle 100. For example, a heater core 114 heats the air inside the vehicle, and an evaporator 153 cools the air inside the vehicle.

[0037] In the thermal management system 100a, the refrigeration cycle 150, chiller 160, SPU 132, each PCU, each heater, each pump, and each valve are controlled by an on-board ECU (Electronic Control Unit) (not shown). Each of the PCUs 132 and 134 has a semiconductor power device 10 as shown in Figure 1. The case of each PCU corresponds to a metal member 41. In the thermal management system 100a, the battery 200 corresponds to the target component, and the flow path 130a includes the heat dissipation path 30 as shown in Figure 1. By applying the heat dissipation structure shown in Figure 1 to the vehicle 100, the output limitation (power limitation) of the vehicle 100 caused by the temperature rise of each PCU under high load is suppressed. Furthermore, when each PCU is at a low temperature, the heat generation by each PCU (heat transfer to the flow path 130a) can be promoted with ports P3 and P4 of the five-way valve 310 connected. This allows the heat generated by the power semiconductor 11 in each PCU to be used to raise the temperature of the battery 200. Thus, with the vehicle 100, overheating of the semiconductor power device 10 can be suppressed in a high-temperature environment, while the heat generated by the semiconductor power device 10 in a low-temperature environment can be used to raise the temperature of the battery 200.

[0038] The heat dissipation structure shown in Figure 1 can be modified as appropriate. The actuator that moves the heat conductive material (high thermal conductivity material M2 / low thermal conductivity material M3) is not limited to the actuator using the thermal expansion material M1 shown in Figure 1. For example, the heat conductive material may be moved in response to the temperature rise of the heat-generating part by a bimetal or a pump that can move in both forward and reverse directions. The heat-generating part is not limited to power semiconductors, but may be a heat-generating component other than a power semiconductor. The heat dissipation structure shown in Figure 1 may be applied to mobile bodies other than automobiles. Examples of mobile bodies other than automobiles include vehicles other than automobiles (ships, airplanes, etc.), mobile machinery (agricultural machinery, construction machinery, etc.), and unmanned mobile bodies (autonomous transport vehicles, robots, etc.). Furthermore, the heat dissipation structure shown in Figure 1 may be applied to stationary systems.

[0039] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The scope of this disclosure is indicated by the claims rather than by the description of the embodiments above, and all modifications within the meaning and scope equivalent to the claims are intended to be included. [Explanation of Symbols]

[0040] 10 Semiconductor power device, 11 Power semiconductor, 12 Bonding material, 13-15 Substrate, 16 Cooler, 20 Container, 21 Metal part, 22 Resin part, 23 Metal part, 30,40 Heat dissipation path, 30a Heat transfer medium, 31 Tube, 41,42 Metal component, 43 Variable thermal conductivity part, 100 Vehicle, 100a Thermal management system, 200 Battery, M1 Thermal expansion material, M2 High thermal conductivity material, M3 Low thermal conductivity material.

Claims

1. A thermal management system comprising a heat-generating section having multiple heat dissipation paths, The aforementioned plurality of heat dissipation paths include a first heat dissipation path and a second heat dissipation path. The first heat dissipation path is configured to transfer heat from the heat-generating part to other parts other than the heat-generating part. As the temperature of the heat-generating section rises, the amount of heat dissipated from the heat-generating section through the second heat dissipation path increases. The first heat dissipation path includes a flow path through which a heat transfer medium flows, which exchanges heat with the heat-generating part and the other part, The second heat dissipation path includes a heat dissipation section and a heat conduction section that transfers heat from the heat generating section to the heat dissipation section. At least a portion of the heat conduction section is configured such that its thermal conductivity increases in proportion to the temperature rise of the heat generating section. The heat management system further comprises a container capable of exchanging heat with the heat-generating section. The container contains a low thermal conductivity material, a high thermal conductivity material with a higher thermal conductivity than the low thermal conductivity material, and a thermal expansion material with a higher coefficient of thermal expansion than each of the low thermal conductivity material and the high thermal conductivity material. The thermal expansion material contracts and expands in accordance with the temperature of the heat-generating part. The low thermal conductivity material moves within the container so as to be included in the heat conduction portion due to the force generated by the contraction or expansion of the thermal expansion material. A thermal management system in which the high thermal conductivity material moves within the container so as to be included in the heat conduction portion due to the force generated by the expansion or contraction of the thermal expansion material.

2. The container includes a first metal part, a resin part, and a second metal part. The first metal part is configured to transfer the heat generated by the heat-generating part to the thermal expansion material. The second metal part is included in the heat conduction part, The thermal management system according to claim 1, wherein the resin part is located between the first metal part and the second metal part.

3. A vehicle equipped with the thermal management system described in claim 1 or 2, The aforementioned vehicle is Energy storage device, A circuit having a semiconductor power device that drives a motor to move the vehicle using the power output of the energy storage device, Equipped with, The other parts include the energy storage device, The semiconductor power device includes the heat-generating section, and the vehicle is also a vehicle.

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