Multilayer ceramic electronic components

Abstract

To provide a multilayer ceramic electronic part.SOLUTION: A multilayer ceramic electronic part according to an embodiment of the invention comprises: a ceramic main body including a dielectric layer containing a primary component represented by (Ba1-xCax)(Ti1-y(Zr,Hf)y)O3 (where 0≤x≤1 and 0≤y≤0.5), and first and second internal electrodes which are laminated to alternate with the dielectric layer put therebetween; a first external electrode connected to the first internal electrodes; and a second external electrode connected to the second internal electrodes. At least one of the dielectric layer and internal electrodes contains Sn. An average content of Sn at an interface of the dielectric layer and the internal electrode is within a range of 5 at% or more and / or 20 at% or less.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] This invention relates to multilayer ceramic electronic components. [Background technology]

[0002] Recently, the trend towards miniaturization of electronic products has led to a demand for smaller and higher-capacity multilayer ceramic electronic components. In line with this demand for smaller size and higher capacity, the dielectric sheets used in these components are also being made thinner.

[0003] On the other hand, as dielectric sheets are thinned, the size and component distribution of the crystal grains in the dielectric layer are affected, leading to a deterioration in the chip's dielectric strength and reliability characteristics. To address this decrease in reliability, increasing the grain size of materials such as barium titanate makes it difficult to secure the desired level of capacitance, and there are limitations to guaranteeing reliability. Furthermore, as dielectric sheets are thinned, the field strength per unit length applied to the dielectric layer increases, which leads to the deterioration of the dielectric material. [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] One of the various objectives of the present invention is to provide a multilayer ceramic electronic component with excellent high-temperature and high-pressure characteristics.

[0005] One of the various objectives of the present invention is to improve the insulation resistance characteristics of multilayer ceramic electronic components.

[0006] One of the various objectives of the present invention is to provide multilayer ceramic electronic components with improved reliability. [Means for solving the problem]

[0007] A multilayer ceramic electronic component according to one embodiment of the present invention is (Ba1-x Ca x )(Ti 1-y (Zr, Hf) y The ceramic body includes a dielectric layer containing a main component represented by O3 (where 0≦x≦1, 0≦y≦0.5), and first and second internal electrodes alternately stacked with the dielectric layer in between, a first external electrode connected to the first internal electrode, and a second external electrode connected to the second internal electrode, wherein at least one of the dielectric layer and the internal electrodes contains Sn, and the average Sn content at the interface between the dielectric layer and the internal electrodes can be in the range of 5at% or more and / or 20at% or less.

[0008] Multilayer ceramic electronic component according to another embodiment of the present invention, (Ba 1-x Ca x )(Ti 1-y (Zr, Hf) y The ceramic body includes a dielectric layer containing a main component represented by O3 (where 0≦x≦1, 0≦y≦0.5), and first and second internal electrodes alternately stacked with the dielectric layer in between, a first external electrode connected to the first internal electrode, and a second external electrode connected to the second internal electrode, wherein at least one of the dielectric layer and the internal electrodes contains Dy, and the average Dy content at the interface between the dielectric layer and the internal electrodes can be in the range of 1at% or more and / or 5at% or less. [Effects of the Invention]

[0009] One of the various effects of the present invention is that it can improve the high-temperature and high-pressure characteristics of multilayer ceramic electronic components.

[0010] One of the various effects of the present invention is that it can improve the insulation resistance characteristics of multilayer ceramic electronic components.

[0011] One of the various effects of the present invention is that it can improve the reliability of multilayer ceramic electronic components.

[0012] However, the diverse yet significant advantages and effects of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Brief explanation of the drawing]

[0013] [Figure 1] This is a schematic perspective view of a multilayer ceramic electronic component according to one embodiment of the present invention. [Figure 2] Figure 1 is a schematic perspective view showing the ceramic body. [Figure 3] This is a cross-sectional view taken along line I-I' in Figure 1. [Figure 4] This is an enlarged view of area A in Figure 3. [Figure 5(a)] This is an EDS (energy dispersive spectroscopy) mapping image of Ni and BiTO3 at the internal electrode and dielectric interface of one embodiment of the present invention. [Figure 5(b)] This is an EDS (energy dispersive spectroscopy) mapping image of Sn at the internal electrode and dielectric interface of one embodiment of the present invention. [Figure 5(c)] This is an EDS (energy dispersive spectroscopy) mapping image of Dy at the internal electrode and dielectric interface of one embodiment of the present invention. [Figure 6] This graph shows the line profiling results for Ni(a) and BiTO3(b) against the EDS (energy dispersive spectroscopy) mapping at the internal electrode and dielectric interface in Figure 5(a). [Figure 7] Figures 5(a) to 5(c) show graphs of line profiling results for Ni(a), BiTO3(b), Dy(c), and Sn(d) on EDS (energy dispersive spectroscopy) mapping at the internal electrode and dielectric interface, respectively. [Modes for carrying out the invention]

[0014] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. This is not intended to limit the technology described in this specification to specific embodiments, but should be understood to include various modifications, equivalents, and / or alternatives of the embodiments of the present invention. Regarding the description of the drawings, similar reference numerals are used for similar components.

[0015] In addition, parts not related to the description are omitted in the drawings for the sake of clearly explaining the present invention, the thickness is enlarged to clearly show multiple layers and regions, and components with the same function within the scope of the same concept are described using the same reference numerals.

[0016] In this specification, expressions such as "have", "be able to have", "include", or "be able to include" refer to the existence of the feature (for example, components such as numerical values, functions, operations, or parts), and do not exclude the existence of additional features.

[0017] In this specification, expressions such as "A and / or B", "at least one of A and / or B", or "any one or more of A and / or B" can include all possible combinations of the items listed together. For example, "A and / or B", "at least one of A and / or B" can each refer to (1) the case including at least one A, (2) the case including at least one B, or (3) the case including both at least one A and at least one B.

[0018] In the drawings, the X direction can be defined as the first direction, the L direction or the length direction, the Y direction as the second direction, the W direction or the width direction, the Z direction as the third direction, and the T direction or the thickness direction.

[0019] FIG. 1 is a schematic perspective view of a multilayer ceramic electronic component according to an embodiment of the present invention, FIG. 2 is a perspective view of the ceramic body of the multilayer ceramic electronic component, and FIG. 3 is a cross-sectional view taken along the line I-I' of FIG. 1. Further, FIG. 4 is an enlarged view of the A region of FIG. 3, and FIG. 5(a) is an EDS (energy dispersive spectroscopy) mapping image of Ni(a), BiTO3(a), Sn(b), and Dy(c) at the internal electrode and dielectric interface of an embodiment of the present invention. FIG. 5(b) is an EDS (energy dispersive spectroscopy) mapping image of Sn at the internal electrode and dielectric interface of an embodiment of the present invention. FIG. 5(c) is an EDS (energy dispersive spectroscopy) mapping image of Dy at the internal electrode and dielectric interface of an embodiment of the present invention.

[0020] Hereinafter, referring to FIGS. 1 to 4, a multilayer ceramic electronic component according to an embodiment of the present invention will be described in detail.

[0021] Referring to FIGS. 1 to 4, a multilayer ceramic electronic component 100 according to an embodiment of the present invention may include a dielectric layer containing a main component represented by (Ba 1-x Ca x )(Ti 1-y (Zr, Hf) y )O3 (where 0 ≤ x ≤ 1, 0 ≤ y ≤ 0.5), a ceramic body including first and second internal electrodes alternately laminated with the dielectric layer interposed therebetween, a first external electrode connected to the first internal electrode, and a second external electrode connected to the second internal electrode.

[0022] In this case, at least one of the dielectric layer and the internal electrode contains Sn, and the average Sn content at the interface between the dielectric layer and the internal electrode can be in the range of 5 at% or more and / or 20 at% or less. In this specification, the "average content" of a certain component can mean the arithmetic mean of the content of samples taken at 10 different locations. For example, it can be calculated as the arithmetic mean of the content measured at the top and bottom five interfaces in order of proximity to the center of the multilayer ceramic electronic component 100, with respect to the XZ cross-section that passes through the center of the ceramic body 110 of the multilayer ceramic electronic component 100 and is perpendicular to the Y-axis.

[0023] In this specification, the "interface" between the dielectric layer 111 and the first internal electrode 121 and / or the second internal electrode 122 can mean the surface in contact with the dielectric layer and the internal electrode, and can mean a surface that can be observed through SEM images or the like. Furthermore, the interface can mean the surface in contact with two surfaces that have different constituent components, and can mean a surface that can be confirmed through the distribution of the main components of the dielectric layer and the internal electrode.

[0024] For example, referring to Figures 5(a) and 6, it can be confirmed that the Ba and Ti content is not detected from a predetermined position, while the Ni content is detected after passing through that predetermined position. This confirms that the regions where Ba and Ti are distributed and the regions where Ni is distributed are clearly separated, and the region where the Ba and Ni content changes abruptly can be interpreted as the interface between the dielectric layer and the internal electrode.

[0025] Furthermore, Figure 5(b) shows the EDS (energy dispersive spectroscopy) mapping results for Sn at the interface between the internal electrode and the dielectric, and Figure 7 is a graph showing the line profiling results for Ni(a), BiTO3(b), Dy(c), and Sn(d) for the EDS mappings in Figures 5(a) to 5(c). Referring to Figures 5(b) and 7, the peak with the maximum Sn content can be located in the region where the internal electrode and the dielectric meet, and when these peaks are connected, they can be observed as a single line. The line formed by connecting the Sn content peaks can be interpreted as the interface between the dielectric layer and the internal electrode.

[0026] In thin dielectric layers, increasing the fraction of grain boundaries can reduce charge mobility using potential barriers at the interfaces. Therefore, dielectrics with small grain distributions have been studied to increase the fraction of grain boundaries. However, as the dielectric thickness decreases, the electric field strength increases rapidly, and the phenomenon of a lower Schottky barrier becomes relatively common. This makes it difficult to guarantee the reliability of dielectrics in ultrathin layer environments solely through grain distribution adjustments.

[0027] Furthermore, as the thickness of the dielectric layer decreases, the number of dielectric layers increases, and the number of interfaces between the dielectric and the internal electrodes increases. In this case, the characteristics of the entire multilayer ceramic electronic component change significantly depending on the interface characteristics, and the characteristics and reliability of the product change greatly depending on how the interface is designed and controlled. Therefore, the inventors have found that the movement of oxygen vacancies, which is a major mechanism of reliability degradation, can be suppressed by controlling the characteristics of the interface between the dielectric layer and the internal electrodes. In this specification, "oxygen vacancy" means a vacancy that is created when oxygen escapes from where it should be in a certain compound. For example, when barium titanate (BaTiO3) having a perovskite structure (ABO3) is sintered in a reducing atmosphere, some of the oxygen in the barium titanate (BaTiO3) is reduced and the oxygen falls out of the barium titanate (BaTiO3), and the vacancies created by the fall of oxygen become oxygen vacancies with ionic conductivity. Since these oxygen vacancies can worsen electrical properties such as reduced insulation, it is important to suppress oxygen vacancies in thin multilayer ceramic electronic components.

[0028] The multilayer ceramic electronic component according to this embodiment can suppress the movement of oxygen vacancies by controlling the distribution of Sn in the dielectric layer having a perovskite structure (ABO3). In particular, when the Sn content at the interface between the dielectric layer and the internal electrode satisfies the aforementioned range, excellent reliability can be achieved by adjusting the balance between donors and acceptors.

[0029] In another embodiment of the present invention, at least one of the dielectric layer and the internal electrode of the multilayer ceramic electronic component contains Dy, and the average Dy content at the interface between the dielectric layer and the internal electrode can be in the range of 1 at% or more and / or 5 at% or less. Generally, rare earth elements tend to act as donors when substituted at the A site and as acceptors when substituted at the B site. In this case, the ionic radius is an important factor in determining whether the substitution occurs at the A site or / or the B site. Dy is a representative amphoteric element among rare earth elements and can selectively substitute at the A site or the B site to balance the acceptor and donor roles. When the Dy content at the interface between the dielectric layer and the internal electrode satisfies the above range, the movement of oxygen vacancies can be effectively suppressed.

[0030] In one example, at least one of the dielectric layer and the internal electrode of the multilayer ceramic electronic component according to the present invention contains Sn and Dy, the average content of Sn at the interface between the dielectric layer and the internal electrode is in the range of 5 at% or more and / or 20 at% or less, and the average content of Dy at the interface between the dielectric layer and the internal electrode is in the range of 1 at% or more and / or 5 at% or less. That is, it is possible to have a configuration that simultaneously satisfies the two embodiments described above. In this case, a better reliability improvement effect can be obtained.

[0031] A multilayer ceramic electronic component 100 according to one embodiment of the present invention may include a ceramic body 110 that includes a dielectric layer 111 and first and second internal electrodes 121 and 122 that are alternately stacked with the dielectric layer 111 in between.

[0032] The ceramic body 110 may include first and second surfaces S1 and S2 facing the first direction (X direction), third and fourth surfaces S3 and S4 facing the second direction (Y direction), and fifth and sixth surfaces S5 and S6 facing the third direction (Z direction).

[0033] There are no particular restrictions on the specific shape of the ceramic body 110, but as shown in the figure, the ceramic body 110 can be a hexahedron or a similar shape. The ceramic body 110 may not be a perfectly straight hexahedron due to the shrinkage of the ceramic powder contained in the ceramic body 110 during the firing process, but it may have a substantially hexahedron shape. The ceramic body 110 may be rounded at the corners as needed. The rounding process can be performed, for example, by barrel polishing, but is not limited to this.

[0034] The ceramic body 110 described above can be constructed by alternately stacking dielectric layers 111, a first internal electrode 121, and a second internal electrode 122. The dielectric layers 111, the first internal electrode 121, and the second internal electrode 122 can be stacked in a third direction (Z direction). When the multiple dielectric layers 111 are fired, the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0035] The dielectric layer 111 of the multilayer ceramic electronic component 100 according to the present invention is (Ba 1-x Ca x )(Ti 1-y (Zr, Hf) y The composition formula may include components represented by )O3 (where 0≦x≦1, 0≦y≦0.5). The above components may be chemicals that exist in a form in which Ca, Zr, Sn and / or Hf are partially dissolved in BaTiO3. In the above composition formula, x can be in the range of 0 to 1 and y can be in the range of 0 to 0.5, but is not limited thereto. For example, in the above composition formula, if x is 0, y is 0 and z is 0, the above components can be BaTiO3. In addition, various ceramic additives, organic solvents, plasticizers, binders, dispersants, etc. can be added to the above components according to the purpose of the present invention.

[0036] In one embodiment of the present invention, the average thickness of the dielectric layer 111 can be 0.5 μm or less. The average thickness of the dielectric layer 111 can be the average of values ​​measured at five different locations located between the first and second internal electrodes of the fired dielectric layer 111. The lower limit of the average thickness of the dielectric layer 111 is not particularly limited, but can be, for example, 0.01 μm or more.

[0037] The dielectric layer 111 can be formed by adding additives as needed to a slurry containing the aforementioned materials, coating it onto a carrier film, and drying it to provide multiple ceramic sheets. The ceramic sheets can be formed by preparing the slurry in a sheet form with a thickness of several micrometers using a doctor blade method, but are not limited to this.

[0038] In one example of the present invention, the first and second internal electrodes 121 and 122 of the multilayer ceramic electronic component 100 can be laminated such that their respective cross-sections are exposed at opposite ends of the ceramic body 110. Specifically, the first and second internal electrodes 121 and 122 can be exposed on both sides of the ceramic body 110 in a first direction (X direction), with the first internal electrode 121 exposed in the direction of the first surface S1 of the ceramic body 110 and the second internal electrode 122 exposed in the direction of the second surface S2.

[0039] In one example, the average thickness of the first and second internal electrodes 121 and 122 of the multilayer ceramic electronic component 100 can be 0.4 μm or less. The average thickness of the internal electrodes can be the average of values ​​measured at five different locations on the fired internal electrodes. There is no particular lower limit to the average thickness of the first and second internal electrodes, but it can be, for example, 0.01 μm or more.

[0040] The material used to form the first and second internal electrodes 121 and 122 is not particularly limited and can be used to form them using a conductive paste containing, for example, one or more substances from among silver (Ag), palladium (Pd), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0041] The ceramic body 110 described above can be formed by alternately stacking ceramic green sheets, each having a first internal electrode 121 printed on a dielectric layer, and ceramic green sheets, each having a second internal electrode 122 printed on a dielectric layer, in a third direction (Z direction). The printing method for the first and second internal electrodes 121 and 122 can be screen printing or gravure printing, but is not limited to these methods.

[0042] The aforementioned Sn and / or Dy can be included in at least one of the dielectric layer and the internal electrode. When the Sn and / or Dy are included in the dielectric layer, this can be achieved by adding the Sn and / or Dy during the manufacturing process of the ceramic green sheet used to produce the dielectric layer. When the Sn and / or Dy are included in the internal electrode, this can be achieved by adding the Sn and / or Dy during the manufacturing process of the conductive paste used to produce the internal electrode.

[0043] In one example, Sn and / or Dy in a multilayer ceramic electronic component can be included in both the dielectric layer and the internal electrodes. In this case, Dy, which is mainly distributed in the shell portion and / or grain boundaries of the crystal grains of the dielectric layer, and Sn, which is relatively difficult to diffuse into the shell portion, are extruded from the sintering stage. This process minimizes the reaction time with the main component of the dielectric layer, such as barium titanate, and thus minimizes the thickness of the interface between the dielectric layer and the internal electrodes.

[0044] In one embodiment of the present invention, the average thickness of the interface between the dielectric layer and the internal electrode of the multilayer ceramic electronic component according to the present invention can be in the range of 2 nm or more and / or 4 nm or less. In this specification, the "thickness" of the interface between the dielectric layer and the internal electrode can mean the distance to the other surface measured in a direction perpendicular to one surface of the interface, and the "average thickness" can be the value measured at the position where the average content described above was determined. For example, with respect to the XZ cross-section that passes through the center of the ceramic body 110 of the multilayer ceramic electronic component 100 and is perpendicular to the Y axis, it can be determined as the arithmetic mean of the interface thicknesses measured at the top and bottom five interfaces in order of proximity to the center of the multilayer ceramic electronic component.

[0045] As described above, the multilayer ceramic electronic component according to the present invention may contain Sn and / or Dy in a predetermined content range at the interface between the dielectric layer and the internal electrode. In this case, the interface containing Sn and / or Dy can improve the reliability of the product, but a high content of Sn and / or Dy may result in a low dielectric constant. Therefore, the multilayer ceramic electronic component of this embodiment can improve reliability without degrading dielectric properties by adjusting the thickness of the interface between the dielectric layer containing Sn and / or Dy and the internal electrode to the above range.

[0046] In one example of the present invention, the average Sn content in the internal electrodes of a multilayer ceramic electronic component can be in the range of 0.05 at% or more and / or 2 at% or less. In this example, the internal electrodes can contain Sn, and the Sn is squeezed out at the interface between the dielectric layer and the internal electrodes, so that a region with the maximum Sn content is located at the interface between the dielectric layer and the internal electrodes, while the average Sn content in the internal electrodes is lower than the Sn content at the interface and satisfies the above range. The above average content can be the value measured at the central part of the internal electrode adjacent to the measurement position of the above average content. When the Sn contained in the internal electrodes satisfies the above content range, the interface between the dielectric layer and the internal electrodes can be formed thinly.

[0047] In another example of the present invention, the average Dy content in the internal electrode can be in the range of 0.025 at% or more and / or 1 at% or less. Similar to the case of Sn, the region with the maximum Dy content in the internal electrode is located at the interface between the dielectric layer and the internal electrode, and the Dy content in the internal electrode may be lower than the content at the interface. When the Dy content in the internal electrode satisfies the above content range, the interface between the dielectric layer and the internal electrode can be formed thinly without degrading the electrical properties.

[0048] In one embodiment of the present invention, the dielectric layer and / or internal electrode of the multilayer ceramic electronic component contains Sn, and the region within the dielectric layer and / or internal electrode having the maximum Sn content can be located at the interface between the dielectric layer and the internal electrode. The fact that the region within the dielectric layer and / or internal electrode having the maximum Sn content is located at the interface between the dielectric layer and the internal electrode means that the average Sn content decreases as you move away from the interface between the dielectric layer and the internal electrode, and that the average Sn content at a position a certain distance away from the interface between the dielectric layer 111 and the first internal electrode 121 and / or the second internal electrode 122 is lower than that at the interface. Figure 5(b) is an EDS (energy dispersive spectroscopy) mapping image for Sn, and Figure 7 is a graph showing the line profiling results for the above mapping results. Referring to Figures 5(b) and 7, the region with the maximum Sn content can be located at the interface between the dielectric layer and the internal electrode. When the region having the maximum Sn content is located at the interface between the dielectric layer and the internal electrode, the reliability of the multilayer ceramic electronic component can be improved without degrading its electrical properties.

[0049] In the above embodiment, the maximum Sn content at the interface between the dielectric layer and the internal electrode of the multilayer ceramic electronic component according to the present invention can be within the range of 10 at% or more and / or 20 at% or less. The maximum Sn content can be the value measured at the same location as the average content measured as described above.

[0050] In one example, the dielectric layer and / or internal electrodes of a multilayer ceramic electronic component contain Dy, and the region within the dielectric layer and / or internal electrodes having the maximum Dy content can be located at the interface between the dielectric layer and the internal electrodes. The fact that the region with the maximum Dy content within the dielectric layer and / or internal electrodes is located at the interface between the dielectric layer and the internal electrodes means that the average Dy content decreases as you move away from the interface, and that the average Dy content at a certain distance from the interface between the dielectric layer 111 and the first internal electrode 121 and / or second internal electrode 122 is lower than that at the interface. Figure 5(c) is an EDS (energy dispersive spectroscopy) mapping image for Dy, and Figure 7 is a graph showing the line profiling results for the mapping results. Referring to Figures 5(c) and 7, the region with the maximum Dy content can be located at the interface between the dielectric layer and the internal electrodes. When the region containing the maximum amount of Dy is located at the interface between the dielectric layer and the internal electrode, the dielectric strength characteristics of the multilayer ceramic electronic component can be improved.

[0051] In the above example, the maximum value of Dy content at the interface between the dielectric layer and the internal electrode of the multilayer ceramic electronic component according to the present invention can be within the range of 2 at% or more and / or 5 at% or less. The maximum value of Dy content can be the value measured at the same location as the average content measured as described above.

[0052] In one embodiment of the present invention, the dielectric layer and / or internal electrode of the multilayer ceramic electronic component contains Sn and Dy, and the ratio of the Sn content to the Dy content at the interface between the dielectric layer and the internal electrode (Sn / Dy) can be 2 or more. The above ratio (Sn / Dy) can be 2.0 or more, 2.1 or more, 2.2 or more, 2.3 or more, 2.4 or more, or 2.5 or more, but is not limited thereto.

[0053] In another embodiment of the present invention, the dielectric layer and / or internal electrode of the multilayer ceramic electronic component contains Sn and Dy, and the ratio of the Sn content to the Dy content at the interface between the dielectric layer and the internal electrode (Sn / Dy) can be 4 or less. The above ratio (Sn / Dy) can be 4.0 or less, 3.9 or less, 3.8 or less, 3.7 or less, 3.6 or less, or 3.5 or less, but is not limited thereto.

[0054] When the ratio of Sn content to Dy content (Sn / Dy) at the interface between the dielectric layer and the internal electrode of the multilayer ceramic electronic component according to the present invention satisfies the above range, Sn and Dy can be substituted at sites A and B in appropriate proportions, thereby achieving a Fermi level pinning effect in which the Fermi level and Ei have similar values, and improving the reliability of the multilayer ceramic electronic component.

[0055] The multilayer ceramic electronic component 100 according to the present invention may have a first external electrode 131 and a second external electrode 132 arranged on the outer surface of the ceramic body 110. The first external electrode 131 may be arranged on the first surface S1 of the ceramic body 110 of the multilayer ceramic electronic component 100 according to the present invention, and the second external electrode 132 may be arranged on the second surface S2 of the ceramic body 110.

[0056] In one example, at least a portion of the first external electrode 131 of the multilayer ceramic electronic component 100 according to the present invention can be extended and arranged on the third surface S3, fourth surface S4, fifth surface S5, and sixth surface S6 of the ceramic body 110. Also, at least a portion of the second external electrode 132 can be extended and arranged on the third surface S3, fourth surface S4, fifth surface S5, and sixth surface S6 of the ceramic body 110. In this case, the first external electrode 131 and the second external electrode 132 can be arranged spaced apart from each other. When at least a portion of the first external electrode 131 and / or the second external electrode 132 are extended and arranged on the third surface S3, fourth surface S4, fifth surface S5, and sixth surface S6 of the ceramic body 110, the extended portion can function as a so-called band portion, preventing moisture penetration and further improving the reliability of the multilayer ceramic electronic component 100 according to the present invention.

[0057] In one embodiment of the present invention, the first external electrode 131 and the second external electrode 132 of the multilayer ceramic electronic component 100 may be sintered electrodes containing a conductive metal. The conductive metal may include, for example, one or more of nickel (Ni), copper (Cu), tin (Sn), palladium (Pd), platinum (Pt), iron (Fe), gold (Au), silver (Ag), tungsten (W), titanium (Ti), lead (Pb), and alloys thereof.

[0058] Furthermore, the first external electrode 131 and the second external electrode 132 may include glass. The glass may have a composition of mixed oxides and is not particularly limited, but may be one or more selected from the group consisting of silicon oxide, boron oxide, aluminum oxide, transition metal oxide, alkali metal oxide, and alkaline earth metal oxide. The transition metal may be selected from the group consisting of zinc (Zn), titanium (Ti), copper (Cu), vanadium (V), manganese (Mn), iron (Fe), and nickel (Ni), the alkali metal may be selected from the group consisting of lithium (Li), sodium (Na), and potassium (K), and the alkaline earth metal may be one or more selected from the group consisting of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba).

[0059] Examples of methods for forming the first external electrode 131 and the second external electrode 132 include dipping the ceramic body 110 into a conductive paste containing a conductive metal and then firing it, or printing the conductive paste onto the surface of the ceramic body 110 using a screen printing method or gravure printing method and then firing it. Other methods include applying the conductive paste to the surface of the ceramic body 110, or transferring a dried film of the conductive paste onto the ceramic body 110 and then firing it, but are not limited to these methods. For example, the conductive paste can be formed on the ceramic body 110 using various methods other than those described above, and then fired to form the electrodes.

[0060] In another embodiment of the present invention, the first and second external electrodes 131 and 132 of the multilayer ceramic electronic component 100 may be resin-based electrodes comprising a conductivity imparting agent and a base resin. The resin-based electrodes have a structure in which the conductivity imparting agent is dispersed inside the base resin, and by being manufactured in a lower temperature environment compared to fired electrodes, the conductivity imparting agent can exist inside the base resin in particulate form. When the first and second external electrodes 131c and 132c are resin-based electrodes, physical stress such as external impacts can be blocked.

[0061] The above-mentioned conductivity imparting agent may include conductive metals and / or conductive polymers. The conductive metal may be, but is not limited to, one or more selected from the group consisting of, for example, calcium (Ca), titanium (Ti), molybdenum (Mo), tungsten (W), iron (Fe), cobalt (Co), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), zinc (Zn), aluminum (Al), tin (Sn), lead (Pb), and alloys thereof.

[0062] Furthermore, non-limiting examples of the conductive polymers mentioned above include sulfur (S) and / or nitrogen (N)-containing compounds such as PT (poly(thiophene)), PEDOT (poly(ethylenedioxy)thiophene), PPS (poly(p-phenylene sulfide)), PANI (polyanilines), P3HT (poly(3-hexylthiophene-2,5-diyl)), PolyTPD (poly(4-butylphenyldiphenylamine)), PSS (poly(4-butylphenyldiphenylamine)), PVK (poly(9-vinylcarbazole)), PDBT (poly(4,4'-dimethoxy bithophene)), polyaniline, or polypyrrole. Examples of heteroatom-free compounds such as poly(fluorine), polyphenylene, polypyrene, polyazulene, polynaphthalene, PAC (poly(acetylene)), and PPV (poly(p-phenylene vinylene)) are also given, but the invention is not limited thereto.

[0063] The first and second external electrodes 131 and 132 described above may, if necessary, contain, but are not limited to, carbon fillers such as carbon nanotubes, graphene, and fullerene, and / or conductive fillers such as spherical, elliptical, flake-shaped, fibrous, or dendritic alloy fillers.

[0064] The base resins contained in the first and second external electrodes 131 and 132 described above can be, for example, thermosetting resins. Specific examples of thermosetting resins include, but are not limited to, phenolic resins, urea resins, diallyl phthalate resins, melamine resins, guanamine resins, unsaturated polyester resins, polyurethane resins, epoxy resins, amino alkyd resins, melamine-urea cocondensation resins, silicon resins, and polysiloxane resins. When using thermosetting resins, curing agents such as crosslinking agents and polymerization initiators, polymerization accelerators, solvents, viscosity modifiers, etc., may be added as needed.

[0065] [Example of experiment] A High Accelerated Life Test (HALT) was conducted using mass-produced Samsung Electric 1005 size (length × width: 1.0 mm × 0.5 mm) chips (temperature characteristic X7R and capacitance 220.0 nF) with external electrodes formed on the longitudinal surface of the ceramic body. The chips used in the test were manufactured under identical conditions, except that the Sn and Dy content varied, and both chips used Sn and Dy in both the dielectric layer and the internal electrodes. The Sn and Dy content was measured at 10 measurement points to determine the average content as described above, and the peak values ​​of Sn and Dy were the maximum values ​​measured at the above measurement points.

[0066] Furthermore, the average values ​​of Sn and Dy were calculated using the Sn and Dy content at the 10 measurement locations mentioned above. The method for determining the average Sn and Dy content is as follows: (1) First, the point where Sn has a peak value at the above measurement locations was assumed to be the interface between the internal electrode and the dielectric layer. (3) The arithmetic mean of the Sn and Dy content in the region within 2 nm on both sides of the above interface was calculated. The above arithmetic mean was calculated from the line profiling results for EDS (energy dispersive spectroscopy) mapping. Then, (3) the average Sn and Dy content was determined from the arithmetic mean of Sn and Dy calculated at the 10 measurement locations mentioned above.

[0067] [Table 1]

[0068] The high-temperature accelerated life test involved maintaining a temperature of 130°C and a voltage of 2 × Vr (rated voltage) for 100 hours, after which the number of defects occurring in 400 samples was measured.

[0069] Table 1 above shows the HALT test results for peak and average values ​​of Sn and Dy content. As shown in Table 1, it can be confirmed that when the average Sn content at the interface between the internal electrode and the dielectric layer is less than 5 at%, the number of defects increases sharply in the HALT test. Also, it can be confirmed that when the average Dy content is less than 1 at%, the defect rate increases. Referring to the Sn and Dy content in Figure 7, it can be confirmed that the average Sn content is observed in the range of approximately 20 at% or less, and the average Dy content is observed in the range of approximately 5 at% or less. Therefore, it can be confirmed that when the average Dy content at the interface between the internal electrode and the dielectric layer is in the range of 5 at% or more and / or 20 at% or less, it exhibits excellent high-temperature reliability, and when the average Dy content at the interface between the internal electrode and the dielectric layer is in the range of 1 at% or more and / or 5 at% or less, it exhibits a low defect rate.

[0070] Although embodiments of the present invention have been described in detail above, the present invention is not limited by the embodiments described above and the accompanying drawings, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention. [Explanation of Symbols]

[0071] 100: Multilayer ceramic electronic components 110: Ceramic body 111: Dielectric layer 121, 122: First and second internal electrodes 131, 132: First and second external electrodes

Claims

1. (Ba １－ｘ Ca ｘ ) (Ti １－ｙ (Zr, Hf) ｙ ) O ３ A ceramic body comprising a dielectric layer containing a main component represented by (where 0 ≤ x ≤ 1, 0 ≤ y ≤ 0.5), and first and second internal electrodes alternately stacked with the dielectric layer in between, It comprises a first external electrode connected to the first internal electrode and a second external electrode connected to the second internal electrode, At least one of the dielectric layer and the internal electrode includes Sn and Dy. The region within the ceramic body having the maximum Sn content is located at the interface between the dielectric layer and the internal electrode, and the average Sn content at the interface between the dielectric layer and the internal electrode is within the range of 5 at% or more and 20 at% or less. A multilayer ceramic electronic component in which the region having the maximum Dy content within the ceramic body is located at the interface between the dielectric layer and the internal electrode, and the average Dy content at the interface between the dielectric layer and the internal electrode is within the range of 1 at% or more and 5 at% or less.

2. The multilayer ceramic electronic component according to claim 1, wherein both the dielectric layer and the internal electrode contain Sn.

3. The multilayer ceramic electronic component according to claim 1 or 2, wherein the average Sn content in the internal electrode is within the range of 0.05 at% or more and 2 at% or less.

4. The multilayer ceramic electronic component according to any one of claims 1 to 3, wherein both the dielectric layer and the internal electrode contain Dy.

5. The multilayer ceramic electronic component according to any one of claims 1 to 4, wherein the average content of Dy in the internal electrode is within the range of 0.025 at% or more and 1 at% or less.

6. The multilayer ceramic electronic component according to any one of claims 1 to 5, wherein the ratio of the Sn content to the Dy content at the interface between the dielectric layer and the internal electrode (Sn / Dy) satisfies the range of 2 or more.

7. The multilayer ceramic electronic component according to any one of claims 1 to 6, wherein the ratio of the Sn content to the Dy content at the interface between the dielectric layer and the internal electrode (Sn / Dy) is within the range of 4 or less.

8. The multilayer ceramic electronic component according to any one of claims 1 to 7, wherein the average thickness of the interface between the dielectric layer and the internal electrode is within the range of 2 nm or more and 4 nm or less.

9. The multilayer ceramic electronic component according to any one of claims 1 to 8, wherein the average thickness of the dielectric layer is 0.5 μm or less.

10. The multilayer ceramic electronic component according to any one of claims 1 to 9, wherein the average thickness of the first internal electrode and / or the second internal electrode is 0.4 μm or less.

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