Bonding structures and semiconductor devices

Abstract

A connection structure is provided with an electroconductive substrate having an electroconductive section, a terminal including an electroconductive cylindrical holder and a metal pin inserted into the holder, and an electroconductive bonding material for bonding the electroconductive section and the holder. The metal pin includes a linear section that extends along the thickness direction of the electroconductive section. The holder has a first through-hole that extends in the thickness direction and into which the linear section of the metal pin is inserted. The electroconductive section has a terminal bonding surface to which the holder is bonded, and an opening formed on the terminal bonding surface. When viewed in the thickness direction, the outer peripheral edge of the opening is at least partially located inward of the outer peripheral edge of the holder.

Description

Technical Field

[0001] The present disclosure relates to a bonding structure and a semiconductor device.

Background Art

[0002] Conventionally, semiconductor devices including power semiconductor elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are known. Such semiconductor devices can be mounted in all electronic devices from industrial equipment to household appliances, information terminals, and in-vehicle devices. Patent Document 1 discloses a conventional semiconductor device (power semiconductor module). The power semiconductor module described in Patent Document 1 includes a ceramic circuit board, a power semiconductor element, a metal cylinder, an external terminal, and a transfer mold resin (see FIG. 6 of Patent Document 1). The ceramic circuit board includes a ceramic plate and a conductive portion (wiring pattern) of copper foil provided on the ceramic plate. The power semiconductor element and the metal cylinder are arranged on the wiring pattern of the ceramic circuit board. The metal cylinder is joined to the wiring pattern by, for example, solder. The external terminal is press-fitted to the metal cylinder, for example. The external terminal protrudes from the upper surface of the transfer mold resin.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the power semiconductor device described in Patent Document 1, an external terminal is inserted into a metal cylinder. In a configuration in which the external terminal is inserted into the metal cylinder in this way, if the insertion amount of the external terminal into the metal cylinder is small, there is a risk that the external terminal will come out of the metal cylinder.

[0005] This disclosure was conceived in view of the above circumstances, and one objective is to provide a bonding structure between a metal cylinder and a conductive part that can adequately ensure the insertion amount of the external terminals into the metal cylinder. Another objective of this disclosure is to provide a semiconductor device having such a bonding structure. [Means for solving the problem]

[0006] A bonding structure provided by a first aspect of the present disclosure comprises a conductive substrate having a conductive portion, a conductive cylindrical holder, a terminal including a metal pin inserted into the holder, and a conductive bonding material for bonding the conductive portion and the holder, wherein the metal pin includes a straight portion extending along the thickness direction of the conductive portion, the holder extends in the thickness direction and has a first through hole into which the straight portion of the metal pin is inserted, the conductive portion has a terminal bonding surface to which the holder is bonded and an opening formed in the terminal bonding surface, wherein, in the thickness direction, at least a portion of the outer edge of the opening is inward of the outer edge of the holder.

[0007] A semiconductor device provided by a second aspect of this disclosure comprises a junction structure provided by a first aspect and a semiconductor element electrically connected to the terminal. [Effects of the Invention]

[0008] The bonding structure of this disclosure allows for an appropriate amount of insertion of the metal pins into the holder. Furthermore, since the semiconductor device of this disclosure has a bonding structure that ensures an appropriate amount of insertion of the metal pins into the holder, the metal pins can be prevented from coming out of the holder. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a perspective view showing a semiconductor device according to an embodiment. [Figure 2] Figure 2 is a perspective view of Figure 1, with the multiple wires, resin members, resin parts, and resin-filled parts omitted. [Figure 3] Figure 3 is a perspective view of Figure 2, with the conductive members (first conductive member and second conductive member) omitted. [Figure 4] Figure 4 is a plan view showing a semiconductor device according to an embodiment. [Figure 5] Figure 5 is a plan view of Figure 4, in which the resin member, resin part, and resin filling part are shown with dashed lines. [Figure 6] Figure 6 is a partially enlarged view of Figure 5, in which the resin member, resin part, and resin filling part are omitted. [Figure 7] Figure 7 is a plan view of Figure 5, in which a part of the conductive member 5 (the second conductive member) is shown with dashed lines. [Figure 8] Figure 8 is a partially enlarged view of a portion of Figure 7, and is an enlarged plan view of the main part showing the joint structure of this disclosure. [Figure 9] Figure 9 is a front view showing a semiconductor device according to an embodiment. [Figure 10] Figure 10 is a bottom view showing a semiconductor device according to an embodiment. [Figure 11] Figure 11 is a left side view showing a semiconductor device according to an embodiment. [Figure 12] Figure 12 is a right side view showing a semiconductor device according to an embodiment. [Figure 13] Figure 13 is a cross-sectional view along the line XIII-XIII in Figure 5. [Figure 14] Figure 14 is a cross-sectional view along the line XIV-XIV in Figure 5. [Figure 15] Figure 15 is a magnified view of a portion of Figure 14. [Figure 16] Figure 16 is a cross-sectional view along the line XVI-XVI in Figure 5. [Figure 17] Figure 17 is a cross-sectional view along the line XVII-XVII in Figure 5. [Figure 18] Figure 18 is a cross-sectional view along the line XVIII-XVIII in Figure 5. [Figure 19] Figure 19 is a cross-sectional view along the line XIX-XIX in Figure 5. [Figure 20] FIG. 20 is a cross-sectional view taken along line XX-XX of FIG. 5. [Figure 21] FIG. 21 is a partially enlarged view of a part of FIG. 20, and is a cross-sectional view of an enlarged main part showing the joining structure of the present disclosure. [Figure 22] FIG. 22 is a diagram showing a circuit configuration example of the semiconductor device according to the embodiment. [Figure 23] FIG. 23 is a cross-sectional view of an enlarged main part showing another configuration example of the joining structure of the present disclosure. [Figure 24] FIG. 24 is a cross-sectional view of an enlarged main part showing another configuration example of the joining structure of the present disclosure. [Figure 25] FIG. 25 is a plan view of an enlarged main part showing another configuration example of the joining structure of the present disclosure. [Figure 26] FIG. 26 is a plan view of an enlarged main part showing another configuration example of the joining structure of the present disclosure. [Figure 27] FIG. 27 is a plan view of an enlarged main part showing another configuration example of the joining structure of the present disclosure. [Figure 28] FIG. 28 is a plan view of an enlarged main part showing another configuration example of the joining structure of the present disclosure. [Figure 29] FIG. 29 is a plan view of an enlarged main part showing another configuration example of the joining structure of the present disclosure. [Figure 30] FIG. 30 is a plan view of an enlarged main part showing another configuration example of the joining structure of the present disclosure. [Figure 31] FIG. 31 is a perspective view showing another configuration example of the semiconductor device of the present disclosure, in which a plurality of wires, resin members, resin parts, and resin filling parts are omitted. DETAILED DESCRIPTION OF THE INVENTION

[0010] Preferred embodiments of the joining structure and the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, the same or similar components will be denoted by the same reference numerals, and redundant descriptions will be omitted. The terms "first", "second", "third", etc. in the present disclosure are merely used as labels and are not necessarily intended to assign an order to their objects.

[0011] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed from a certain direction" includes both "object A overlapping with all of object B" and "object A overlapping with a part of object B."

[0012] Figures 1 to 22 show an example of a semiconductor device A1 of the present disclosure. The semiconductor device A1 comprises a plurality of semiconductor elements 1, a support substrate 2, a first power terminal 31, a second power terminal 32, a plurality of control terminals 33, a conductive substrate 4, a conductive member 5, a plurality of conductive bonding materials 61, 63, a plurality of wires 651 to 654, and a resin member 7. The conductive substrate 4 includes a first conductive substrate 4A and a second conductive substrate 4B. The conductive member 5 includes a first conductive member 51 and a second conductive member 52.

[0013] For the sake of explanation, the thickness direction of semiconductor device A1 is referred to as the "thickness direction z". In the following explanation, one direction in the thickness direction z may be referred to as "up" and the other as "down". In the following explanation, terms such as "up", "down", "upper", "downward", "upper surface", and "lower surface" indicate the relative positional relationship of each component in the thickness direction z, and do not necessarily define a relationship with the direction of gravity. Also, "plan view" refers to the view in the thickness direction z. One direction perpendicular to the thickness direction z is called the "first direction x". For example, the first direction x is the left-right direction in the plan view of semiconductor device A1 (see Figures 4 and 5). The direction perpendicular to the thickness direction z and the first direction x is called the "second direction y". For example, the second direction y is the up-down direction in the plan view of semiconductor device A1 (see Figures 4 and 5).

[0014] Each of the multiple semiconductor elements 1 is a functional core of the semiconductor device A1. The constituent material of each semiconductor element 1 includes, for example, SiC (silicon carbide). The constituent material is not limited to SiC, and may also include Si (silicon), GaAs (gallium arsenide), or GaN (gallium nitride). Each semiconductor element 1 is, for example, a switching element. Each semiconductor element 1 has a switching function section Q1 (see Figure 22) composed of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The switching function section Q1 is not limited to a MOSFET, and may be other transistors such as field-effect transistors including MISFETs (Metal-Insulator-Semiconductor FETs) or bipolar transistors such as IGBTs. The multiple semiconductor elements 1 are identical to each other. Each semiconductor element 1 is, for example, an n-channel type MOSFET, but may also be a p-channel type MOSFET.

[0015] As shown in Figures 3 and 7, the multiple semiconductor elements 1 include at least one first semiconductor element 1A and at least one second semiconductor element 1B. In the illustrated example, the semiconductor device A1 comprises multiple (3) first semiconductor elements 1A and multiple (3) second semiconductor elements 1B. However, the number of first semiconductor elements 1A and the number of second semiconductor elements 1B are not limited to this configuration and can be appropriately changed depending on the performance required of the semiconductor device A1.

[0016] As shown in Figure 22, the semiconductor device A1 is configured, for example, as a half-bridge circuit. Multiple first semiconductor elements 1A constitute the upper arm circuit of the semiconductor device A1, and multiple second semiconductor elements 1B constitute the lower arm circuit of the semiconductor device A1. As shown in Figure 22, in the upper arm circuit, the multiple first semiconductor elements 1A are connected in parallel to each other, and in the lower arm circuit, the multiple second semiconductor elements 1B are connected in parallel to each other. Each first semiconductor element 1A and each second semiconductor element 1B are connected in series. In other words, each first semiconductor element 1A is connected in series to each of the three second semiconductor elements 1B.

[0017] Each of the multiple first semiconductor elements 1A is mounted on a support substrate 2, as shown in Figures 3, 7, and 16. In the examples shown in Figures 3, 7, and 16, the multiple first semiconductor elements 1A are aligned in the second direction y and spaced apart from each other. As shown in Figures 14 and 15, each first semiconductor element 1A is electrically bonded to the support substrate 2 (first conductor 24A, described later) via a conductive bonding material 61 (conductive bonding material 61A, described later).

[0018] Each of the multiple second semiconductor elements 1B is mounted on a support substrate 2, as shown in Figures 3, 7, and 17. In the examples shown in Figures 3, 7, and 17, the multiple second semiconductor elements 1B are aligned in the second direction y and spaced apart from each other. As shown in Figure 14, each second semiconductor element 1B is electrically bonded to the support substrate 2 (the second conductor 24B, described later) via a conductive bonding material 61 (the conductive bonding material 61B, described later). As can be seen from Figure 7, when viewed in the first direction x, the multiple first semiconductor elements 1A and the multiple second semiconductor elements 1B overlap. Alternatively, when viewed in the first direction x, each first semiconductor element 1A may be arranged so as not to overlap with any of the second semiconductor elements 1B.

[0019] Each of the multiple semiconductor elements 1 (multiple first semiconductor elements 1A and multiple second semiconductor elements 1B) has a main element surface 10a and a back surface 10b, as shown in Figure 15. While Figure 15 shows an example structure of each first semiconductor element 1A, each second semiconductor element 1B has a similar structure. As shown in Figure 15, in each semiconductor element 1, the main element surface 10a and the back surface 10b are spaced apart in the thickness direction z. The main element surface 10a faces one direction (upwards) in the thickness direction z, and the back surface 10b faces the other direction (downwards) in the thickness direction z. When each first semiconductor element 1A is joined to the first conductor 24A, the back surface 10b of each first semiconductor element 1A faces the first conductor 24A. When each second semiconductor element 1B is joined to the second conductor 24B, the back surface 10b of each second semiconductor element 1B faces the second conductor 24B.

[0020] Each of the multiple semiconductor elements 1 (multiple first semiconductor elements 1A and multiple second semiconductor elements 1B) has a first main surface electrode 11, a second main surface electrode 12, and a back surface electrode 15, as shown in Figures 7 and 15. The first main surface electrode 11, the second main surface electrode 12, and the back surface electrode 15 are configured similarly in each semiconductor element 1. The first main surface electrode 11 and the second main surface electrode 12 are located on the main surface 10a of each semiconductor element 1. The first main surface electrode 11 and the second main surface electrode 12 are insulated by an insulating film (not shown). The back surface electrode 15 is located on the back surface 10b of each semiconductor element 1.

[0021] In each semiconductor device 1, the first main surface electrode 11 is, for example, a gate, to which a drive signal (for example, a gate voltage) for driving the semiconductor device 1 is input. In each semiconductor device 1, the second main surface electrode 12 is, for example, a source, through which a source current flows. The back surface electrode 15 is, for example, a drain, through which a drain current flows. The back surface electrode 15 covers the entire (or substantially the entire) surface of the back surface 10b of the device. The back surface electrode 15 is, for example, made of Ag plating.

[0022] Each semiconductor element 1 switches between a conduction state and an interrupted state in response to a drive signal (gate voltage) input to the first main surface electrode 11 (gate) by the switching function unit Q1. This switching operation between the conduction state and the interrupted state is called a switching operation. In the conduction state, current flows from the back surface electrode 15 (drain) to the second main surface electrode 12 (source), and in the interrupted state, this current does not flow. In other words, each semiconductor element 1 performs a switching operation by the switching function unit Q1. The semiconductor device A1 converts a first power supply voltage (for example, a DC voltage) to a second power supply voltage (for example, an AC voltage) by the switching function units Q1 of the multiple semiconductor elements 1. The first power supply voltage is input to the first power supply terminal 31, and the second power supply voltage is input to the second power supply terminal 32.

[0023] Some of the multiple semiconductor elements 1 (two in semiconductor device A1) further have a diode function unit D1 (see Figure 22) in addition to the switching function unit Q1 described above. In the example shown in Figure 7, one of the multiple first semiconductor elements 1A (the first semiconductor element 1A located on one side of the second direction y in Figure 7) and one of the multiple second semiconductor elements 1B (the second semiconductor element 1B located on the other side of the second direction y in Figure 7) include a diode function unit D1. The function and role of the diode function unit D1 are not particularly limited, but an example is a temperature sensing diode. Note that the diode D2 shown in Figure 22 is, for example, a parasitic diode component of the switching function unit Q1. In a configuration different from semiconductor device A1, it is not necessary for any of the multiple semiconductor elements 1 to have a diode function unit D1.

[0024] Each semiconductor element 1 having a diode function portion D1 further has a pair of third main surface electrodes 13 in addition to the first main surface electrode 11, second main surface electrode 12, and back surface electrode 15, as shown in Figure 7. The pair of third main surface electrodes 13 are similarly configured in each semiconductor element 1 having a diode function portion D1. The pair of third main surface electrodes 13 are formed on the main surface 10a of the element, as can be understood from Figure 7. Each of the pair of third main surface electrodes 13 conducts to the diode function portion D1 in each semiconductor element 1 having a diode function portion D1.

[0025] The configurations of the multiple semiconductor elements 1 (multiple first semiconductor elements 1A and multiple second semiconductor elements 1B) are not limited to the examples described above. For example, an additional electrode (e.g., a source sense) at the same potential as the second main surface electrode 12 may be formed on the main surface 10a of the element.

[0026] The support substrate 2 supports a plurality of semiconductor elements 1. Together with the conductive members 5, the support substrate 2 constitutes a path for the main circuit current switched by each semiconductor element 1. The support substrate 2 includes an insulating layer 21, a main surface metal layer 22, a bonding layer 221, a back surface metal layer 23, a first conductor 24A, a second conductor 24B, and a pair of conductive bonding materials 25A, 25B.

[0027] The insulating layer 21 is, for example, a ceramic with excellent thermal conductivity. Examples of such ceramics include AlN (aluminum nitride), SiN (silicon nitride), or Al2O3 (aluminum oxide). The insulating layer 21 may also be an insulating resin sheet or the like, instead of a ceramic. The insulating layer 21 is, for example, rectangular in plan view.

[0028] As shown in Figures 13 to 15, the insulating layer 21 has a main surface 21a and a back surface 21b. The main surface 21a and the back surface 21b are spaced apart in the thickness direction z. The main surface 21a faces upward in the thickness direction z, and the back surface 21b faces downward in the thickness direction z. The main surface 21a and the back surface 21b are flat (or nearly flat).

[0029] The main surface metal layer 22 is formed on the main surface 21a, as shown in Figures 13 to 15. The constituent material of the main surface metal layer 22 is, for example, Cu or a Cu alloy. The constituent material may be Al or an Al alloy, rather than either Cu or a Cu alloy.

[0030] As shown in Figures 13 and 14, the main surface metal layer 22 includes a first support portion 22A and a second support portion 22B. The first support portion 22A and the second support portion 22B are spaced apart in a first direction x. The first support portion 22A is joined to and supports the first conductor 24A. The second support portion 22B is joined to and supports the second conductor 24B. The first support portion 22A and the second support portion 22B are, for example, rectangular in plan view.

[0031] The bonding layer 221 is formed on the upper surface of the main surface metal layer 22 (each of the first support portion 22A and the second support portion 22B), as shown in Figure 15. The bonding layer 221 is, for example, an Ag plating. The bonding layer 221 is provided, for example, to improve bonding by solid-phase diffusion with each conductive bonding material 25A, 25B.

[0032] The back metal layer 23 is formed on the back surface 21b, as shown in Figures 13 to 15. The constituent material of the back metal layer 23 is the same as the constituent material of the main surface metal layer 22. The lower surface of the back metal layer 23 (the surface facing the other direction in the thickness direction z) is exposed from, for example, the resin member 7, as shown in Figures 10 and 13 to 15. In contrast to this configuration, the lower surface of the back metal layer 23 may be covered by the resin member 7. In the example where the lower surface of the back metal layer 23 is exposed from the resin member 7, a heat dissipation member (e.g., a heat sink) not shown can be attached to the lower surface. In a plan view, the back metal layer 23 overlaps both the first support portion 22A and the second support portion 22B.

[0033] In the support substrate 2, in the example where the constituent materials of the main surface metal layer 22 and the back surface metal layer 23 are Cu or a Cu alloy, the insulating layer 21, the main surface metal layer 22, and the back surface metal layer 23 are made of, for example, a DBC (Direct Bonded Copper) substrate. In contrast to this configuration, in the example where the constituent materials of the main surface metal layer 22 and the back surface metal layer 23 are Al or an Al alloy, the insulating layer 21, the main surface metal layer 22, and the back surface metal layer 23 are made of, for example, a DBA (Direct Bonded Aluminum) substrate.

[0034] The first conductor 24A and the second conductor 24B are each metal plate-shaped members. This metal is, for example, Cu or a Cu alloy. The first conductor 24A and the second conductor 24B, together with the first power terminal 31 and the second power terminal 32, constitute a conductive path to a plurality of semiconductor elements 1. The first conductor 24A and the second conductor 24B are spaced apart in the first direction x, as shown in Figures 7, 13, and 14. The first conductor 24A and the second conductor 24B are rectangular in plan view, as shown in Figure 7. The first conductor 24A and the second conductor 24B overlap when viewed in the first direction x. The first conductor 24A and the second conductor 24B each have, for example, a dimension in the first direction x of 15 mm to 25 mm (preferably 20 mm), a dimension in the second direction y of 30 mm to 40 mm (preferably 35 mm), and a dimension in the thickness direction z of 1.5 mm to 3.0 mm (preferably 2.0 mm). These dimensions of the first conductor 24A and the second conductor 24B are not limited to the numerical examples described above and may be appropriately changed according to the specifications of the semiconductor device A1.

[0035] The first conductor 24A includes a base material 241, a main surface bonding layer 242, and a back surface bonding layer 243, as shown in Figure 15. The second conductor 24B also includes a base material 241, a main surface bonding layer 242, and a back surface bonding layer 243, similar to the first conductor 24A. The base material 241, the main surface bonding layer 242, and the back surface bonding layer 243 are configured similarly in the first conductor 24A and the second conductor 24B. The base material 241 is a metallic plate-like member. This metal is Cu or a Cu alloy. The main surface bonding layer 242 is formed on the upper surface of the base material 241 (the surface facing upward in the thickness direction z). The main surface bonding layer 242 is the surface layer on the upper side in the thickness direction z in both the first conductor 24A and the second conductor 24B. The main surface bonding layer 242 is, for example, Ag plating. The back bonding layer 243 is formed on the lower surface (the surface facing downward in the thickness direction z) of the substrate 241. The back bonding layer 243 is the surface layer on the lower side in the thickness direction z for both the first conductor 24A and the second conductor 24B. The back bonding layer 243 is, like the main surface bonding layer 242, for example, Ag plating.

[0036] As shown in Figures 13 to 16 and Figure 20, the first conductor 24A is joined to the first support portion 22A via a conductive bonding material 25A. As shown in Figures 14 to 16 and Figure 20, a plurality of first semiconductor elements 1A are joined to the upper surface (the surface facing upward in the thickness direction z) of the first conductor 24A via a conductive bonding material 61 (conductive bonding material 61A described later). The back electrodes 15 (drains) of each of the plurality of first semiconductor elements 1A are electrically connected to each other via the first conductor 24A.

[0037] As shown in Figures 13, 14, 17, and 18, the second conductor 24B is joined to the second support portion 22B via a conductive bonding material 25B. As shown in Figures 14 and 17, multiple second semiconductor elements 1B are joined to the upper surface (the surface facing upward in the thickness direction z) of the second conductor 24B via a conductive bonding material 61 (conductive bonding material 61A described later). The back electrodes 15 (drains) of each of the multiple second semiconductor elements 1B are electrically connected to each other via the second conductor 24B.

[0038] As shown in Figures 7 and 13, a plurality of recesses 240a are formed on the upper surface in the thickness direction z of the first conductor 24A and the second conductor 24B. Each recess 240a is recessed in the thickness direction z from the upper surface in the thickness direction z of the first conductor 24A or the upper surface in the thickness direction z of the second conductor 24B. Each recess 240a is formed during the molding of the resin member 7. Two recesses 240a formed on the upper surface in the thickness direction z of the first conductor 24A are spaced apart in the second direction y and overlap when viewed in the second direction y. Two recesses 240a formed on the upper surface in the thickness direction z of the second conductor 24B are spaced apart in the second direction y and overlap when viewed in the second direction y.

[0039] As shown in Figures 13 to 15 and Figure 20, the conductive bonding material 25A is interposed between the first support portion 22A and the first conductor 24A. The conductive bonding material 25A fixes the first conductor 24A to the first support portion 22A. As shown in Figures 13, 14, 17 and 18, the conductive bonding material 25B is interposed between the second support portion 22B and the second conductor 24B. The conductive bonding material 25B fixes the second conductor 24B to the second support portion 22B.

[0040] As shown in Figure 15, the conductive bonding material 25A has a base layer 251, an upper layer 252, and a lower layer 253. The conductive bonding material 25B also has a base layer 251, an upper layer 252, and a lower layer 253, similar to the conductive bonding material 25A. In each conductive bonding material 25A and 25B, the base layer 251, the upper layer 252, and the lower layer 253 are laminated together. The base layer 251, the upper layer 252, and the lower layer 253 are similarly configured in each conductive bonding material 25A and 25B.

[0041] The base layer 251 is made of metal, and the metal is, for example, Al or an Al alloy. The base layer 251 is, for example, a sheet material.

[0042] The upper layer 252 is formed on the upper surface of the base layer 251. The upper layer 252 is composed of, for example, Ag plating. In conductive bonding material 25A, the upper layer 252 is interposed between the base layer 251 and the first conductor 24A. The upper layer 252 of conductive bonding material 25A is bonded to the back surface bonding layer 243 of the first conductor 24A by, for example, solid-phase diffusion of metal. In conductive bonding material 25B, the upper layer 252 is interposed between the base layer 251 and the second conductor 24B. The upper layer 252 of conductive bonding material 25B is bonded to the back surface bonding layer 243 of the second conductor 24B by, for example, solid-phase diffusion of metal. As a result, the upper layers 252 of the pair of conductive bonding materials 25A and 25B and the back surface bonding layers 243 of the first conductor 24A and the second conductor 24B are bonded in direct contact with each other at the bonding interface. In this disclosure, "A and B are joined by solid-phase diffusion" means that, as a result of solid-phase diffusion bonding, A and B are fixed to each other in direct contact at the bonding interface, and it can be said that a solid-phase diffusion bonding layer is formed by A and B. When solid-phase diffusion bonding is performed under ideal conditions, the bonding interface may not be clearly defined due to the diffusion of metallic elements. On the other hand, if inclusions such as oxide films are present on the surface of A and B, or if voids exist between A and B, these inclusions or voids may be present at the bonding interface.

[0043] The lower layer 253 is formed on the lower surface of the base layer 251. The lower layer 253 is composed of, for example, Ag plating. In conductive bonding material 25A, the lower layer 253 is interposed between the base layer 251 and the first support portion 22A. The lower layer 253 of conductive bonding material 25A is bonded to the bonding layer 221 on the first support portion 22A by, for example, solid-phase diffusion of metal. In conductive bonding material 25B, the lower layer 253 is interposed between the base layer 251 and the second support portion 22B. The lower layer 253 of conductive bonding material 25B is bonded to the bonding layer 221 on the second support portion 22B by, for example, solid-phase diffusion of metal. As a result, the lower layers 253 of each pair of conductive bonding materials 25A and 25B and the bonding layers 221 on the first support portion 22A and the second support portion 22B are bonded in direct contact with each other at the bonding interface.

[0044] The composition of each conductive bonding material 25A, 25B is not limited to the example having a base layer 251, an upper layer 252, and a lower layer 253 as described above, but may also be solder, metal paste, or sintered metal.

[0045] The first power terminal 31 and the second power terminal 32 are each metal plate-shaped members. This metal is, for example, Cu or a Cu alloy. The first power terminal 31 includes an input terminal 31A and two input terminals 31B, and the second power terminal 32 includes two output terminals 32A. Input terminal 31A is an example of a "first input terminal," and each input terminal 31B is an example of a "second input terminal."

[0046] A first power supply voltage is applied between input terminal 31A and the two input terminals 31B. In other words, the first power supply voltage is input to the first power supply terminal 31. Input terminal 31A is, for example, a positive terminal (P terminal), and the two input terminals 31B are, for example, negative terminals (N terminals). In contrast to this configuration, input terminal 31A may be a negative terminal (N terminal), and each of the two input terminals 31B may be a positive terminal (P terminal). In this case, the wiring inside the package should be appropriately changed to match the change in terminal polarity. A second power supply voltage is applied to each of the two output terminals 32A. In other words, the second power supply voltage is input to the second power supply terminal 32. Each of the multiple input terminals 31A, 31B and the two output terminals 32A includes a portion covered by the resin member 7 and a portion exposed from the resin member 7.

[0047] As shown in Figure 14, the input terminal 31A is formed integrally with the first conductor 24A, for example. Alternatively, the input terminal 31A may be separated from the first conductor 24A and electrically connected to the first conductor 24A. As shown in Figure 7, the input terminal 31A is located in the first direction x on the opposite side of the multiple second semiconductor elements 1B from the multiple first semiconductor elements 1A. The input terminal 31A is electrically connected to the first conductor 24A and, via the first conductor 24A, is electrically connected to the back electrode 15 (drain) of each semiconductor element 1.

[0048] The two input terminals 31B are spaced apart from the first conductor 24A, as shown in Figure 13. The second conductive member 52 is joined to each of the two input terminals 31B. As shown in Figure 7, the two input terminals 31B are located on the same side as the input terminal 31A in the first direction x with respect to the plurality of first semiconductor elements 1A. The two input terminals 31B are conductive to the second conductive member 52 and are also conductive to the second main surface electrode 12 (source) of each second semiconductor element 1B via the second conductive member 52.

[0049] The first power terminal 31 (input terminal 31A and each of the two input terminals 31B) protrudes from the resin member 7 in one direction in the first direction x of the semiconductor device A1. Input terminal 31A and the two input terminals 31B are spaced apart from each other. In the second direction y, the two input terminals 31B are located on opposite sides of input terminal 31A. Input terminal 31A and the two input terminals 31B overlap each other when viewed in the second direction y.

[0050] The two output terminals 32A are each integrally formed with the second conductor 24B, as can be seen from Figures 7 and 14. Alternatively, the two output terminals 32A may be separated from the second conductor 24B and electrically connected to the second conductor 24B. As shown in Figure 7 and other figures, the two output terminals 32A are located on the opposite side of the multiple first semiconductor elements 1A in the first direction x from the multiple second semiconductor elements 1B. Each output terminal 32A is electrically connected to the second conductor 24B and, via the second conductor 24B, is electrically connected to the back electrode 15 (drain) of each second semiconductor element 1B. In semiconductor device A1, the number of output terminals 32A is not limited to two; for example, there may be one or three or more. For example, if semiconductor device A1 has one output terminal 32A, it is desirable that this one output terminal 32A is connected to the central portion of the second conductor 24B in the second direction y in order to reduce the distance difference of the conduction path to the first main surface electrode 11 (drain) of each second semiconductor element 1B that passes through the second conductor 24B.

[0051] Each of the control terminals 33 is a pin-shaped terminal for controlling each semiconductor element 1. As shown in Figures 1 and 4, the control terminals 33 include a plurality of first control terminals 34 and a plurality of second control terminals 35.

[0052] Multiple first control terminals 34 are used to control multiple first semiconductor elements 1A. As shown in Figures 1 and 4, the multiple first control terminals 34 include a first drive terminal 34A and multiple first detection terminals 34B to 34D.

[0053] The first drive terminal 34A is joined to the first conductive substrate 4A, as shown in Figures 7 and 20. The first drive terminal 34A conducts to each of the first main surface electrodes 11 (gates) of the plurality of first semiconductor elements 1A. The first drive terminal 34A is the input terminal for the first drive signal. The first drive signal is an electrical signal for driving each of the plurality of first semiconductor elements 1A, and is the gate voltage in the example where each first semiconductor element 1A is a MOSFET.

[0054] The first detection terminal 34B is bonded to the first conductive substrate 4A, as shown in Figures 7 and 20. The first detection terminal 34B is conductive to each of the second main surface electrodes 12 (sources) of the multiple first semiconductor elements 1A. The first detection terminal 34B is the output terminal for the first detection signal. The first detection signal is an electrical signal for detecting the conductivity state of the multiple first semiconductor elements 1A.

[0055] The pair of first detection terminals 34C are each joined to the first conductive substrate 4A, as shown in Figures 7 and 20. Each of the pair of first detection terminals 34C is electrically connected to each of the pair of third main surface electrodes 13 of the first semiconductor element 1A having a diode function part D1. The pair of first detection terminals 34C are terminals that are electrically connected to the diode function part D1 of the first semiconductor element 1A.

[0056] The first detection terminal 34D is bonded to the first conductive substrate 4A, as shown in Figures 7 and 20. The first detection terminal 34D is conductive to each back electrode 15 (drain) of the plurality of first semiconductor elements 1A. The voltage of each back electrode 15 of the plurality of first semiconductor elements 1A (voltage corresponding to the drain current) is applied to the first detection terminal 34D. The first detection terminal 34D is a terminal (drain sense terminal) for detecting the drain signals of the plurality of semiconductor elements 1.

[0057] Multiple second control terminals 35 are used to control multiple second semiconductor elements 1B. As shown in Figures 1 and 4, the multiple second control terminals 35 include a second drive terminal 35A and multiple second detection terminals 35B, 35C.

[0058] The second drive terminal 35A is joined to the second conductive substrate 4B, as shown in Figures 7 and 18. The second drive terminal 35A conducts to each of the first main surface electrodes 11 (gates) of the multiple second semiconductor elements 1B. The second drive terminal 35A is the input terminal for the second drive signal. The second drive signal is an electrical signal for driving each of the multiple second semiconductor elements 1B, and is the gate voltage in the example where each second semiconductor element 1B is a MOSFET.

[0059] The second detection terminal 35B is bonded to the second conductive substrate 4B, as shown in Figures 7 and 18. The second detection terminal 35B is conductive to each of the second main surface electrodes 12 (sources) of the multiple second semiconductor elements 1B. The second detection terminal 35B is the output terminal for the second detection signal. The second detection signal is an electrical signal for detecting the conductivity state of the multiple second semiconductor elements 1B.

[0060] The pair of second detection terminals 35C are each bonded to the second conductive substrate 4B, as shown in Figures 7 and 18. Each of the pair of second detection terminals 35C is electrically connected to each of the pair of third main surface electrodes 13 of the second semiconductor element 1B having a diode function part D1. The pair of second detection terminals 35C are terminals that are electrically connected to the diode function part D1 of the second semiconductor element 1B.

[0061] Each of the control terminals 33 (first drive terminal 34A, multiple first detection terminals 34B to 34D, second drive terminal 35A, and multiple second detection terminals 35B, 35C) includes a holder 331 and a metal pin 333. The holder 331 and metal pin 333 are configured similarly for each control terminal 33.

[0062] The holder 331 is made of a conductive material. As shown in Figures 18, 20, and 21, the holder 331 is bonded to the conductive substrate 4 (either the first conductive substrate 4A or the second conductive substrate 4B) via a conductive bonding material 63. A metal pin 333 is inserted through the holder 331.

[0063] The holder 331 includes a cylindrical portion 331a, an upper flange portion 331b, and a lower flange portion 331c, as shown in Figures 8 and 21. The cylindrical portion 331a is, for example, cylindrical and is arranged in a circular position in semiconductor device A1 when viewed from above. The metal pin 333 is inserted into the cylindrical portion 331a. The upper flange portion 331b and the lower flange portion 331c are arranged on either side of the cylindrical portion 331a in the thickness direction z. The upper flange portion 331b and the lower flange portion 331c are, for example, circular when viewed from above. In contrast to this configuration, the upper flange portion 331b and the lower flange portion 331c may be elliptical or polygonal (including rectangular) when viewed from above. The upper flange portion 331b and the lower flange portion 331c are the same shape and size when viewed from above. The upper flange portion 331b and the lower flange portion 331c are larger than the cylindrical portion 331a in a plan view. The upper flange portion 331b connects to the upper edge of the cylindrical portion 331a in the thickness direction z. The upper surface of the upper flange portion 331b is exposed from the resin member 7 (the second projection portion 752 described later) and is covered by the resin portion 77. The lower flange portion 331c connects to the lower edge of the cylindrical portion 331a in the thickness direction z. The lower flange portion 331c is joined to the conductive substrate 4 by a conductive bonding material 63.

[0064] The holder 331 has a through hole 332, as shown in Figures 8 and 21. The through hole 332 penetrates the holder 331 in the thickness direction z, as shown in Figure 21, and spans the cylindrical portion 331a, the upper flange portion 331b, and the lower flange portion 331c in the thickness direction z. The metal pin 333 is inserted into the through hole 332. The through hole 332 is circular in plan view. The inner diameter of the holder 331, i.e., the diameter r1 of the through hole 332 in plan view (see Figure 8), is, for example, 0.5 mm or more and 1.0 mm or less. The through hole 332 is an example of a "first through hole".

[0065] The metal pin 333 is a rod-shaped member extending in the thickness direction z. The metal pin 333 is supported by being press-fitted into the holder 331. The metal pin 333 is inserted from the upper side of the holder 331 in the thickness direction z. The metal pin 333 is electrically connected to the conductive substrate 4 (main surface metal layer 42 described later) via the holder 331. The metal pin 333 is, for example, a pin for a press-fit terminal. In semiconductor device A1, the metal pin 333 extends straight from the holder 331 in the thickness direction z, but a portion of it may be bent above the holder 331 in the thickness direction z.

[0066] The metal pin 333 includes a straight portion 333a. The straight portion 333a extends along the thickness direction z. The straight portion 333a is the part of the metal pin 333 that is inserted into the through hole 332. At least a portion of the straight portion 333a is in contact with the inner surface of the holder 331.

[0067] At each control terminal 33, the dimension d1 in the thickness direction z of the straight portion 333a (see Figure 21) is between 20% and 90% of the dimension in the thickness direction z of the holder 331. For example, in an example where the dimension in the thickness direction z of the holder 331 is 2.8 mm, the dimension d1 in the thickness direction z of the straight portion 333a is, for example, 2.0 mm. Note that the dimension d1 in the thickness direction z of the straight portion 333a corresponds to the insertion amount of the metal pin 333 into the holder 331.

[0068] The conductive substrate 4 supports a plurality of control terminals 33. The conductive substrate 4 is interposed between the support substrate 2 and the plurality of control terminals 33. The conductive substrate 4 is made of, for example, a DBC substrate. In contrast to this configuration, the conductive substrate 4 may be made of a DBA substrate. Also, the conductive substrate 4 may be made of a printed circuit board instead of a DBC substrate.

[0069] The conductive substrate 4 includes a first conductive substrate 4A and a second conductive substrate 4B, as shown in Figures 7 and 14. The first conductive substrate 4A is placed on the first conductor 24A of the support substrate 2. The first conductive substrate 4A supports a plurality of first control terminals 34, i.e., a first drive terminal 34A and a plurality of first detection terminals 34B to 34D, among the plurality of control terminals 33. The first conductive substrate 4A is bonded to the first conductor 24A via a bonding material 49, as shown in Figures 15, 20 and 21. The bonding material 49 may be conductive or insulating, but solder, for example, is used. The second conductive substrate 4B is placed on the second conductor 24B of the support substrate 2. The second conductive substrate 4B supports a plurality of second control terminals 35, i.e., a second drive terminal 35A and a plurality of second detection terminals 35B, 35C, among the plurality of control terminals 33. As shown in Figure 18, the second conductive substrate 4B is bonded to the second conductor 24B via a bonding material 49.

[0070] The conductive substrate 4 (the first conductive substrate 4A and the second conductive substrate 4B, respectively) has an insulating layer 41, a main surface metal layer 42, and a back surface metal layer 43, as shown in Figures 18 and 20. Unless otherwise specified, the insulating layer 41, the main surface metal layer 42, and the back surface metal layer 43 are configured similarly in the first conductive substrate 4A and the second conductive substrate 4B.

[0071] The insulating layer 41 is made of, for example, ceramic. This ceramic is, for example, AlN, SiN, or Al2O3. The insulating layer 41 is, for example, rectangular in plan view. The insulating layer 41 has a main surface 41a and a back surface 41b, as shown in Figure 21. The main surface 41a and the back surface 41b are spaced apart in the thickness direction z. The main surface 41a faces upward in the thickness direction z, and the back surface 41b faces downward in the thickness direction z. The main surface 41a and the back surface 41b are flat (or nearly flat).

[0072] As shown in Figure 21, the main surface metal layer 42 is formed on the main surface 41a of the insulating layer 41. Each of the control terminals 33 is erected on the main surface metal layer 42. The constituent material of the main surface metal layer 42 is, for example, Cu or a Cu alloy. The constituent material may be Al or an Al alloy, rather than Cu or a Cu alloy. The thickness of the main surface metal layer 42 (dimension along the thickness direction z) is, for example, 200 μm or more and 500 μm or less. As shown in Figure 7, the main surface metal layer 42 includes a plurality of conductive parts 421 to 424.

[0073] Multiple conductive parts 421 to 424 are spaced apart from each other and insulated from one another. The thickness direction of each conductive part 421 to 424 is the same as the thickness direction z. In each of the first conductive substrate 4A and the second conductive substrate 4B, the planar shape of the multiple conductive parts 421 to 424 is not limited to the illustrated example and can be appropriately changed according to the specifications of the semiconductor device A1 (arrangement of each semiconductor element 1, arrangement of the first power terminal 31 and the second power terminal 32, etc.). Each conductive part 421 to 424 of the first conductive substrate 4A is an example of a "first conductive part", and each conductive part 421 to 424 of the second conductive substrate 4B is an example of a "second conductive part".

[0074] The conductive portion 421 has multiple wires 651 joined to it, and each wire 651 provides electrical contact with the first main surface electrode 11 (gate) of each semiconductor element 1. As shown in Figures 7, 18, and 20, the first drive terminal 34A is joined to the conductive portion 421 of the first conductive substrate 4A, and the second drive terminal 35A is joined to the conductive portion 421 of the second conductive substrate 4B.

[0075] The conductive portion 422 has multiple wires 652 joined to it, and each wire 652 provides electrical contact with the second main surface electrode 12 (source) of each semiconductor element 1. As shown in Figures 7, 18, and 20, the first detection terminal 34B is joined to the conductive portion 422 of the first conductive substrate 4A, and the second detection terminal 35B is joined to the conductive portion 422 of the second conductive substrate 4B.

[0076] Each pair of conductive parts 423 is joined to a wire 653, which provides electrical conductivity to each third main surface electrode 13 of the semiconductor element 1 having a diode functional part D1. As shown in Figures 7, 18, and 20, each conductive part 423 of the first conductive substrate 4A is joined to a first detection terminal 34C, and each conductive part 423 of the second conductive substrate 4B is joined to a second detection terminal 35C.

[0077] As shown in Figure 7, a wire 654 is joined to the conductive portion 424 of the first conductive substrate 4A, and electrical conductivity to the first conductor 24A is established via the wire 654. The first detection terminal 34D is joined to the conductive portion 424 of the first conductive substrate 4A, as shown in Figures 7 and 20. None of the multiple wires 641 to 645 are joined to the conductive portion 424 of the second conductive substrate 4B. Also, none of the multiple control terminals 33 are joined to the conductive portion 424 of the second conductive substrate 4B.

[0078] In each of the first conductive substrate 4A and the second conductive substrate 4B, the plurality of conductive portions 421 to 424 each have a terminal bonding surface 420a, an opening 420b, and a through hole 420c. The terminal bonding surface 420a, the opening 420b, and the through hole 420c are similarly formed in each conductive portion 421 to 424 of the first conductive substrate 4A and the second conductive substrate 4B.

[0079] The terminal bonding surface 420a faces upward in the thickness direction z. The holders 331 of each control terminal 33 are bonded to the terminal bonding surface 420a via a conductive bonding material 63, which will be described later. The terminal bonding surface 420a is flat (or approximately flat).

[0080] The opening 420b is formed on the terminal bonding surface 420a. As shown in Figure 8, in a plan view, at least a portion of the outer edge of the opening 420b lies inside the outer edge 331d of the holder 331. The outer edge 331d of the holder 331 is the outer edge of the end of the holder 331 that is closer to the terminal bonding surface 420a in the thickness direction z. Therefore, in a configuration in which the holder 331 has a lower end flange 331c, the outer edge 331d of the holder 331 in a plan view is the outer edge of the lower end flange 331c in a plan view. In semiconductor device A1, as shown in Figure 8, the opening 420b is formed such that the outer edge in a plan view is concentric with the outer edge 331d of the holder 331 in a plan view. Also, as can be understood from Figures 8 and 21, in a plan view, the entire outer edge of the opening 420b overlaps with the lower end flange 331c. The diameter r2 of the aperture 420b in a plan view (see Figure 8) is, for example, between 0.8 mm and 1.6 mm.

[0081] The through-hole 420c connects to the opening 420b and penetrates each conductive part 421-424 in the thickness direction z from the opening 420b. As shown in Figure 21, a conductive bonding material 63 is partially formed in the through-hole 420c, and the inner surface of the through-hole 420c is in contact with the conductive bonding material 63. In the example shown in Figure 21, the inner surface of the through-hole 420c is tapered in the thickness direction z from the side connected to the opening 420b to the side in contact with the insulating layer 41. In contrast to this configuration, the inner surface of the through-hole 420c does not have to be tapered. As shown in Figure 21, the insulating layer 41, when viewed in plan, includes an exposed portion 410 that overlaps the through-hole 420c and is not covered by the main surface metal layer 42. The through-hole 420c is an example of a "second through-hole".

[0082] The back metal layer 43 is formed on the back surface 41b of the insulating layer 41, as shown in Figure 21. The back metal layer 43 of the first conductive substrate 4A is bonded to the first conductor 24A via a bonding material 49, as shown in Figures 14, 20, and 21. The back metal layer 43 of the second conductive substrate 4B is bonded to the second conductor 24B via a bonding material 49, as shown in Figures 14 and 18.

[0083] The conductive member 5, together with the support substrate 2, constitutes a path for the main circuit current switched by the plurality of semiconductor elements 1. The conductive member 5 is spaced apart from the support substrate 2 in the thickness direction z and overlaps the support substrate 2 in a plan view. The conductive member 5 is made of a metallic plate-like member. The metal is, for example, Cu or a Cu alloy. The conductive member 5 is partially bent. The conductive member 5 includes a plurality of first conductive members 51 and a second conductive member 52. The main circuit current includes a first main circuit current and a second main circuit current. The first main circuit current is the current flowing between the input terminal 31A and the output terminal 32A. The second main circuit current is the current flowing between the output terminal 32A and the input terminal 31B.

[0084] Each of the multiple first conductive members 51 is joined to each second main surface electrode 12 (source) and second conductor 24B of each of the multiple first semiconductor elements 1A, thereby creating electrical conductivity between each second main surface electrode 12 of each of the multiple first semiconductor elements 1A and the second conductor 24B. Each first conductive member 51 and each second main surface electrode 12 of each of the multiple first semiconductor elements 1A, and each first conductive member 51 and the second conductor 24B, are joined via a conductive bonding material 591, as shown in Figure 14. The conductive bonding material 591 is, for example, solder, metal paste, or sintered metal. Each first conductive member 51 is strip-shaped and extends in a first direction x in a plan view, as shown in Figure 7.

[0085] In the illustrated example, the number of first conductive members 51 is three, corresponding to the number of first semiconductor elements 1A. However, in a different configuration, the number of first conductive members 51 may be shared among multiple first semiconductor elements 1A, regardless of the number of first semiconductor elements 1A.

[0086] The second conductive member 52 connects each second main surface electrode 12 (source) of the plurality of second semiconductor elements 1B to each input terminal 31B. The second conductive member 52 has a maximum dimension in the first direction x of, for example, 25 mm to 40 mm (preferably 32 mm), and a maximum dimension in the second direction y of, for example, 30 mm to 45 mm (preferably 38 mm). Note that these dimensions of the second conductive member 52 are not limited to the numerical examples above and may be appropriately changed according to the specifications of the semiconductor device A1. As shown in Figures 5 and 6, the second conductive member 52 includes a pair of first wiring sections 521, a second wiring section 522, a third wiring section 523, and a plurality of fourth wiring sections 524.

[0087] One end of a pair of first wiring sections 521 is connected to one end of a pair of input terminals 31B, and the other end of a pair of first wiring sections 521 is connected to the other end of a pair of input terminals 31B. Each first wiring section 521 and each input terminal 31B are joined by a conductive bonding material 592, as shown in Figures 6 and 13. The conductive bonding material 592 can be, for example, solder, metal paste, or sintered metal. As shown in Figures 5 and 6, each pair of first wiring sections 521 is a strip extending in a first direction x in a plan view. The pair of first wiring sections 521 are spaced apart in a second direction y and are arranged parallel (or nearly parallel) to each other.

[0088] The second wiring section 522 connects to both of the pair of first wiring sections 521, as shown in Figures 5 and 6. In a plan view, the second wiring section 522 is a strip-shaped portion extending in the second direction y. As can be understood from Figures 5 and 6, in a plan view, the second wiring section 522 overlaps with the plurality of second semiconductor elements 1B. The second wiring section 522 connects to each of the second semiconductor elements 1B, as shown in Figure 17. As can be understood from Figures 6 and 17, the second wiring section 522 has a plurality of recessed regions 522a. Each of the recessed regions 522a protrudes downward in the thickness direction z compared to other parts of the second wiring section 522, as shown in Figure 17. Each recessed region 522a of the second wiring section 522 and each second main surface electrode 12 of the plurality of second semiconductor elements 1B are joined via a conductive bonding material 593, as can be understood from Figure 17. The conductive bonding material 593 is, for example, solder, metal paste, and sintered metal.

[0089] The third wiring section 523 connects to both of the pair of first wiring sections 521, as shown in Figures 5 and 6. In a plan view, the third wiring section 523 is a strip extending in the second direction y. In the first direction x, the third wiring section 523 is spaced apart from the second wiring section 522. The third wiring section 523 is parallel (or nearly parallel) to the second wiring section 522. In a plan view, the third wiring section 523 overlaps with a plurality of first semiconductor elements 1A. As shown in Figures 6 and 16, the third wiring section 523 has a plurality of convex regions 523a. Each convex region 523a protrudes upward in the thickness direction z compared to other parts of the third wiring section 523, as shown in Figure 16. Each convex region 523a overlaps with each first semiconductor element 1A in a plan view, as shown in Figure 6. Since the third wiring section 523 has multiple convex regions 523a, as shown in Figure 16, regions for joining each first conductive member 51 are provided on each first semiconductor element 1A. This prevents the third wiring section 523 from coming into contact with each first conductive member 51.

[0090] Each of the multiple fourth wiring sections 524 is connected to both the second wiring section 522 and the third wiring section 523, as shown in Figures 5 and 6. Each fourth wiring section 524 is a strip extending in the first direction x in a plan view. The multiple fourth wiring sections 524 are spaced apart in the second direction y and are arranged parallel (or approximately parallel) in a plan view. One end of each of the multiple fourth wiring sections 524 in the first direction x is connected to a portion of the third wiring section 523 that overlaps between two first semiconductor elements 1A adjacent in the second direction y in a plan view, and the other end of each fourth wiring section 524 in the first direction x is connected to a portion of the second wiring section 522 that overlaps between two second semiconductor elements 1B adjacent in the second direction y in a plan view.

[0091] As shown in Figures 5 to 7, each of the pair of first wiring portions 521 of the second conductive member 52 has an opening 53 formed therein. Each opening 53 is a partially cut-out portion when viewed in plan. In plan view, the opening 53 is located in a position that overlaps with the first conductor 24A but does not overlap with each first semiconductor element 1A. Each opening 53 is a through hole that penetrates, for example, in the thickness direction z, as shown in Figure 13. In plan view, each opening 53 is provided in a portion that overlaps with at least two corners of the first conductor 24A, and is provided, for example, on the side of each first wiring portion 521 that is closer to the first power terminal 31 in the first direction x. The planar shape of each opening 53 is not limited and may be a hole as in the example in Figures 5 to 7, or, unlike this example, it may be a notch.

[0092] Each of the multiple conductive bonding materials 61 bonds each semiconductor element 1 to the support substrate 2. The multiple conductive bonding materials 61 include multiple conductive bonding materials 61A and multiple conductive bonding materials 61B.

[0093] Each of the multiple conductive bonding materials 61A is interposed between the first conductor 24A and each first semiconductor element 1A, as shown in Figures 14 to 16. Each of the multiple conductive bonding materials 61A is used to fix each first semiconductor element 1A to the first conductor 24A. Each of the multiple conductive bonding materials 61B is interposed between the second conductor 24B and each second semiconductor element 1B, as shown in Figures 14 and 17. Each of the multiple conductive bonding materials 61B is used to fix each second semiconductor element 1B to the second conductor 24B.

[0094] Each of the multiple conductive bonding materials 61 (multiple conductive bonding materials 61, 61B) has a base layer 611, an upper layer 612, and a lower layer 613, as shown in Figure 15. In each conductive bonding material 61 (each conductive bonding material 61A, 61B), the base layer 611, the upper layer 612, and the lower layer 613 are laminated together. Unless otherwise specified, the base layer 611, the upper layer 612, and the lower layer 613 are configured similarly in each conductive bonding material 61 (each conductive bonding material 61A, 61B).

[0095] The base layer 611 is made of metal, and the metal is, for example, Al or an Al alloy. The base layer 611 is, for example, a sheet material.

[0096] As shown in Figure 15, the upper layer 612 is formed on the upper surface of the base layer 611. In conductive bonding material 61A, the upper layer 612 is interposed between the base layer 611 and the first semiconductor element 1A, as shown in Figure 15. The upper layer 612 of conductive bonding material 61A is bonded to the back electrode 15 of the first semiconductor element 1A, for example, by solid-phase diffusion of metal. In conductive bonding material 61B, the upper layer 612 is interposed between the base layer 611 and the second semiconductor element 1B. The upper layer 612 of conductive bonding material 61B is bonded to the back electrode 15 of the second semiconductor element 1B, for example, by solid-phase diffusion of metal. As a result, the upper layers 612 of the pair of conductive bonding materials 61A and 61B and the back electrodes 15 of the first semiconductor element 1A and the second semiconductor element 1B are bonded in direct contact with each other at the bonding interface.

[0097] As shown in Figure 15, the lower layer 613 is formed on the lower surface of the base layer 611. In conductive bonding material 61A, the lower layer 613 is interposed between the base layer 611 and the first conductor 24A, as shown in Figure 15. The lower layer 613 of conductive bonding material 61A is bonded to the main surface bonding layer 242 of the first conductor 24A, for example, by solid-phase diffusion of metal. Similarly, in conductive bonding material 61B, the lower layer 613 is interposed between the base layer 611 and the second conductor 24B. The lower layer 613 of conductive bonding material 61B is bonded to the main surface bonding layer 242 of the second conductor 24B, for example, by solid-phase diffusion of metal. As a result, the lower layers 613 of each pair of conductive bonding materials 61A and 61B and the main surface bonding layers 242 of the first conductor 24A and the second conductor 24B are bonded in direct contact with each other at the bonding interface.

[0098] Each conductive bonding material 61 (each conductive bonding material 61A, 61B) is not limited to having the above-described base layer 611, upper layer 612, and lower layer 613, but may be solder, metal paste, or sintered metal, etc.

[0099] Multiple conductive bonding materials 63 electrically bond each holder 331 of each control terminal 33 to the main surface metal layer 42 of each conductive substrate 4 (first conductive substrate 4A and second conductive substrate 4B). Multiple conductive bonding materials 63 are, for example, solder. Multiple conductive bonding materials 63 include multiple conductive bonding materials 63A and multiple conductive bonding materials 63B.

[0100] As shown in Figure 20, the conductive bonding material 63A bonds each of the multiple first control terminals 34 (first drive terminal 34A and multiple first detection terminals 34B to 34D) to the respective conductive portions 421 to 424 of the main surface metal layer 42 of the first conductive substrate 4A. In the semiconductor device A1, as shown in Figure 20, the holder 331 of the first drive terminal 34A is bonded to the conductive portion 421 of the main surface metal layer 42 of the first conductive substrate 4A by each conductive bonding material 63A, the holder 331 of the first detection terminal 34B is bonded to the conductive portion 422 of the main surface metal layer 42 of the first conductive substrate 4A, the holders 331 of the pair of first detection terminals 34C are bonded to the respective conductive portions 423 of the main surface metal layer 42 of the first conductive substrate 4A, and the holder 331 of the first detection terminal 34D is bonded to the conductive portion 424 of the main surface metal layer 42 of the first conductive substrate 4A.

[0101] The conductive bonding material 63B bonds each of the multiple second control terminals 35 (second drive terminal 35A and multiple second detection terminals 35B, 35C) to the respective conductive portions 421 to 424 of the main surface metal layer 42 of the second conductive substrate 4B. In the semiconductor device A1, as shown in Figure 18, the holder 331 of the second drive terminal 35A is bonded to the conductive portion 421 of the main surface metal layer 42 of the second conductive substrate 4B by each conductive bonding material 63B, the second detection terminal 35B is bonded to the conductive portion 422 of the main surface metal layer 42 of the second conductive substrate 4B, and the pair of second detection terminals 35C are bonded to the respective conductive portions 423 of the main surface metal layer 42 of the second conductive substrate 4B.

[0102] As shown in Figure 15, each of the multiple conductive bonding materials 63 is sandwiched, at least in part, between the holder 331 (lower flange portion 331c) of each control terminal 33 and the main surface metal layer 42 (each conductive portion 421-424) of the conductive substrate 4 (each of the first conductive substrate 4A and the second conductive substrate 4B) in the thickness direction z. The thickness of this sandwiched portion (dimension in the thickness direction z) is, for example, 20 μm to 70 μm, and within this range, an appropriate thinness can be ensured while ensuring appropriate bonding strength. As shown in Figure 15, in a plan view, each outer peripheral edge of the multiple conductive bonding materials 63 is located outward from the outer peripheral edge 331d of the holder 331 of each control terminal 33.

[0103] In the example shown in Figure 21, each of the multiple conductive bonding materials 63 (multiple conductive bonding materials 63A and multiple conductive bonding materials 63B) includes an inlet portion 631 and a filling portion 632. The inlet portion 631 is the portion of each conductive bonding material 63 formed within the through hole 332 of the holder 331. For example, as shown in Figure 21, the upper surface of the inlet portion 631 is arc-shaped when viewed in a direction perpendicular to the thickness direction z (for example, the first direction x), and curves downward in the thickness direction z. In contrast to this configuration, the upper surface of the inlet portion 631 may be flat. The shape of the upper surface of the inlet portion 631 can be curved in an arc or flat depending on the type of surface treatment of the holder 331 and the type of conductive bonding material 63 (solder). The ratio of the dimension h1 in the thickness direction z of the inlet portion 631 to the inner diameter of the holder 331 (diameter r1 of the through hole 332) (h1 / r1 × 100) is, for example, 10% or more and 65% or less. Furthermore, the dimension h1 in the thickness direction z of the inlet portion 631 is, for example, 100 μm or more and 500 μm or less. The filling portion 632 is the part of each conductive bonding material 63 that is formed within the through hole 420c. The lower surface of the filling portion 632 is curved in an arc shape. Note that the configuration of the conductive bonding material 63 shown in Figure 21 is an example where the diameter r2 of the opening 420b in a plan view is, for example, 0.8 mm.

[0104] In semiconductor device A1, each conductive bonding material 63 is solder, and each insulating layer 41 of the first conductive substrate 4A and the second conductive substrate 4B is ceramic. Therefore, each insulating layer 41 has low affinity (low wettability) to each conductive bonding material 63. As a result, as shown in Figure 21, a gap 630 is formed between the conductive bonding material 63 and the insulating layer 41. This is because the insulating layer 41 has low affinity to the conductive bonding material 63, making it difficult for the conductive bonding material 63 to come into contact with the insulating layer 41, and the gap 630 remains after the conductive bonding material 63 hardens. Due to this gap 630, as shown in Figure 21, at least a portion of the exposed portion 410 of the insulating layer 41 is not in contact with the conductive bonding material 63.

[0105] Furthermore, in semiconductor device A1, each conductive bonding material 63 is solder, and each main surface metal layer 42 of the first conductive substrate 4A and the second conductive substrate 4B is Cu or a Cu alloy. Therefore, each main surface metal layer 42 has a high affinity (high wettability) for each conductive bonding material 63. For this reason, as shown in Figure 21, each conductive bonding material 63 is in contact with the inner surface of the through hole 420c.

[0106] Furthermore, in semiconductor device A1, each conductive bonding material 63 is solder, and each holder 331 of the multiple control terminals 33 is made of Cu or a Cu alloy. Therefore, each holder 331 has a high affinity (high wettability) for each conductive bonding material 63. As a result, as shown in Figure 21, each conductive bonding material 63 flows into the through-holes 332 of each holder 331, forming an inflow portion 631. However, depending on the amount of each conductive bonding material 63 and the volume of each through-hole 420c, an inflow portion 631 may not be formed.

[0107] Each of the wires 651-654 electrically connects two points that are spaced apart from each other. Each of the wires 651-654 is, for example, a bonding wire. The constituent material of each of the wires 651-654 includes, for example, Au (gold), Al, or Cu.

[0108] The multiple wires 651 include multiple first wires 651A and multiple second wires 651B. As shown in Figure 7, each of the multiple first wires 651A is joined to the first main surface electrode 11 (gate) of each first semiconductor element 1A and to the conductive portion 421 of the main surface metal layer 42 of the first conductive substrate 4A, thereby making them electrically conductive. As shown in Figure 7, each of the multiple second wires 651B is joined to the first main surface electrode 11 (gate) of each second semiconductor element 1B and to the conductive portion 421 of the main surface metal layer 42 of the second conductive substrate 4B, thereby making them electrically conductive.

[0109] The multiple wires 652 include multiple first wires 652A and multiple second wires 652B. As shown in Figure 7, each of the multiple first wires 652A is joined to the second main surface electrode 12 (source) of each first semiconductor element 1A and to the conductive portion 422 of the main surface metal layer 42 of the first conductive substrate 4A, thereby making them electrically conductive. As shown in Figure 7, each of the multiple second wires 652B is joined to the second main surface electrode 12 (source) of each second semiconductor element 1B and to the conductive portion 422 of the main surface metal layer 42 of the second conductive substrate 4B, thereby making them electrically conductive. If each semiconductor element 1 has an additional electrode that is a source sense, the first wires 652A and second wires 652B are joined to the additional electrode that is a source sense instead of the second main surface electrode 12 (source).

[0110] The multiple wires 653 include a pair of first wires 653A and a pair of second wires 653B. As shown in Figure 7, each pair of first wires 653A is joined to each third main surface electrode 13 of the first semiconductor element 1A having a diode function D1 and to each conductive portion 423 of the main surface metal layer 42 of the first conductive substrate 4A, thereby making them electrically conductive. As shown in Figure 7, each pair of second wires 654B is joined to each third main surface electrode 13 of the second semiconductor element 1B having a diode function D1 and to each conductive portion 423 of the main surface metal layer 42 of the second conductive substrate 4B, thereby making them electrically conductive.

[0111] As shown in Figure 7, the wire 654 is joined to the first conductor 24A and the conductive portion 424 of the first conductive substrate 4A, thereby creating an electrical connection between them.

[0112] The resin member 7 covers a plurality of semiconductor elements 1, a part of the support substrate 2, a part each of the first power terminal 31 and the second power terminal 32, the conductive substrate 4 (first conductive substrate 4A and second conductive substrate 4B), the conductive members 5 (first conductive member 51 and second conductive member 52), a plurality of conductive bonding materials 61, 63, and a plurality of wires 651 to 654. The resin member 7 is made of, for example, an insulating resin material. This resin material is, for example, epoxy resin. The resin member 7 is formed, for example, by molding. The resin member 7 has, for example, a dimension of 35 mm or more and 60 mm or less in the first direction x, a dimension of 35 mm or more and 50 mm or less in the second direction y, and a dimension of 4 mm or more and 15 mm or less in the thickness direction z. These dimensions are the size of the largest part along each direction. These dimensions of the resin member 7 are not limited to the above example and can be appropriately changed according to the specifications of the semiconductor device A1. The resin member 7 has a main resin surface 71, a resin back surface 72, and a plurality of resin side surfaces 731 to 734.

[0113] The resin main surface 71 and the resin back surface 72 are spaced apart in the thickness direction z, as shown in Figures 9, 11, and 12. The resin main surface 71 faces upward in the thickness direction z, and the resin back surface 72 faces downward in the thickness direction z. Multiple control terminals 33 (first drive terminal 34A, multiple first detection terminals 34B to 34D, second drive terminal 35A, and multiple second detection terminals 35B, 35C) protrude from the resin main surface 71. As shown in Figure 10, the resin back surface 72 is frame-shaped in plan view, surrounding the lower surface (the surface facing downward in the thickness direction z) of the main surface metal layer 42 of the conductive substrate 4. The lower surface of the main surface metal layer 42 is exposed from the resin back surface 72. For example, the resin back surface 72 is flush with the lower surface of the main surface metal layer 42. Multiple resin side surfaces 731-734 are each connected to both the main resin surface 71 and the back resin surface 72, and are sandwiched between them in the thickness direction z. As shown in Figures 4, 9, and 10, resin side surfaces 731 and 732 are spaced apart in the first direction x. Resin side surface 732 faces one side of the first direction x, and resin side surface 731 faces the other side of the first direction x. Two output terminals 32A (second power supply terminals 32) protrude from resin side surface 731, and three input terminals 31A, 31B (first power supply terminals 31) protrude from resin side surface 732. As shown in Figures 4 and 10-12, resin side surfaces 733 and 734 are spaced apart in the second direction y. Resin side surface 734 faces one side of the second direction y, and resin side surface 733 faces the other side of the second direction y.

[0114] As shown in Figures 4 and 10, a plurality of recesses 732a are formed on the resin side surface 732. Each recess 732a is a recessed portion in the first direction x when viewed from above. The plurality of recesses 732a are formed between the input terminal 31A and one of the pair of input terminals 31B when viewed from above, and between the input terminal 31A and the other of the pair of input terminals 31B when viewed from above. The plurality of recesses 732a are provided to increase the creepage distance along the resin side surface 732 between the input terminal 31A and one of the pair of input terminals 31B, and the creepage distance along the resin side surface 732 between the input terminal 31A and the other of the pair of input terminals 31B, respectively.

[0115] As shown in Figures 13 and 14, the resin member 7 has a plurality of first protrusions 751, a plurality of second protrusions 752, and a resin void 76.

[0116] Each of the multiple first protrusions 751 protrudes from the resin main surface 71 in the thickness direction z, as shown in Figure 13. In a plan view, the multiple first protrusions 751 are arranged near the four corners of the resin member 7. At the tip of each first protrusion 751 (the end facing upward in the thickness direction z), a first protruding end face 751a is formed, as shown in Figure 13. Each first protruding end face 751a of the multiple first protrusions 751 is parallel (or approximately parallel) to the resin main surface 71 and lies on the same plane (xy plane). Each first protrusion 751 is, for example, a frustoconical shape with a bottom and hollow. The multiple first protrusions 751 are used as spacers when the semiconductor device A1 is mounted on a control circuit board or the like in equipment that utilizes a power supply generated by the semiconductor device A1. The shape of each first protrusion 751 may be columnar, but is preferably cylindrical.

[0117] As shown in Figure 14 and other figures, the multiple second protrusions 752 extend from the resin main surface 71 in the thickness direction z. In a plan view, the multiple second protrusions 752 overlap the multiple control terminals 33. Each metal pin 333 of the multiple control terminals 33 protrudes from each second protrusion 752. A part of the holder 331 (the upper surface of the upper flange portion 331b) is exposed from the upper end surface of each second protrusion 752. Each second protrusion 752 is frustoconical in shape. A resin portion 77 is arranged on each second protrusion 752.

[0118] As shown in Figure 14 and other figures, the resin portion 77 is provided on the second protrusion 752 of the resin member 7. At each control terminal 33, the resin portion 77 covers a part of the holder 331 (the upper surface of the upper flange portion 331b) and a part of the metal pin 333 that are exposed from the resin member 7. The resin portion 77 is made of an insulating resin material (for example, epoxy resin) similar to the resin member 7, but it may be made of a different material. The resin portion 77 is formed, for example, by resin potting after the metal pin 333 is inserted into the holder 331.

[0119] As shown in Figure 13, the resin void portion 76 extends from the resin main surface 71 to the recess 240a in the thickness direction z. The resin void portion 76 is formed in a tapered shape, with the cross-sectional area decreasing as it extends from the resin main surface 71 to the recess 240a in the thickness direction z.

[0120] The resin-filled portion 78 is filled into the resin void portion 76 so as to fill the resin void portion 76. The resin-filled portion 78 is made of an insulating resin material (e.g., epoxy resin), similar to the resin member 7, but may be made of a different material than the resin member 7. The resin-filled portion 78 is formed, for example, by resin potting. The lower edge of the resin-filled portion 78 in the thickness direction z is in contact with the recesses 240a of the first conductor 24A and the second conductor 24B.

[0121] The operation and effects of semiconductor device A1 are as follows:

[0122] The semiconductor device A1 comprises a bonding structure including a conductive substrate 4 (first conductive substrate 4A or second conductive substrate 4B), a control terminal 33, and a conductive bonding material 63. The conductive substrate 4 (first conductive substrate 4A or second conductive substrate 4B) has conductive parts 421 to 424. The control terminal 33 includes a holder 331 and a metal pin 333. The conductive bonding material 63 bonds each conductive part 421 to 424 to the control terminal 33. The holder 331 has a through hole 332. The through hole 332 penetrates the holder 331 in the thickness direction z, and a part of the metal pin 333 (straight portion 333a) is inserted into it. Each conductive part 421 to 424 has a terminal bonding surface 420a to which the holder 331 is bonded, and an opening 420b formed in the terminal bonding surface 420a. In configurations different from this bonding structure, where openings 420b are not formed in each conductive part 421-424, when the holder 331 is bonded to each conductive part 421-424, the conductive bonding material 63 may flow into the through-hole 332, making it impossible to secure a sufficient amount for terminal insertion. On the other hand, in the bonding structure of semiconductor device A1, the amount of conductive bonding material 63 flowing into the through-hole 332 is suppressed by the openings 420b. As a result, it becomes possible to secure an appropriate amount for inserting the metal pins 333 into the holder 331. Thus, the bonding structure of semiconductor device A1 allows the metal pins 333 to be properly inserted into the holder 331, thus preventing the metal pins 333 from coming out of the holder 331. For example, if the dimension d1 in the thickness direction z of the straight portion 333a of the metal pin 333 (see Figure 21) is 20% to 90% (preferably 60% to 85%) of the dimension in the thickness direction z of the holder 331, then the metal pin 333 can be said to be properly inserted into the holder 331.

[0123] According to the present inventor, the amount of conductive bonding material 63 creeping up into the through hole 332 was simulated with the diameter r2 of the opening 420b set to 0.8 mm and the inner diameter of the holder 331 (diameter r1 of the through hole 332) set to 0.74 mm. The amount of creeping up corresponds to the dimension h1 in the thickness direction z of the formed inlet portion 631 (see Figure 21). As a result, when the opening 420b was not provided, the amount of conductive bonding material 63 creeping up was 500 μm or more, whereas when the opening 420b was provided, it was 450 μm or less. In other words, it was confirmed that providing the opening 420b suppresses the amount of conductive bonding material 63 creeping up into the holder 331 (through hole 332).

[0124] In the bonding structure of semiconductor device A1, in a plan view, at least a portion of the outer edge of the opening 420b lies inside the outer edge 331d of the holder 331. As described above, the outer edge 331d is the outer edge of the lower end of the holder 331 in the thickness direction z. With this configuration, at least a portion of the lower end of the holder 331 in the thickness direction z faces the terminal bonding surface 420a, so that lower end does not enter the opening 420b. If the lower end of the holder 331 in the thickness direction z were to enter the opening 420b, the amount of conductive bonding material 63 creeping up into the through hole 332 would increase, and it may not be possible to adequately secure the insertion amount of the metal pin 333 into the holder 331. Therefore, in the bonding structure of semiconductor device A1, the lower end of the holder 331 in the thickness direction z does not enter the opening 420b, so the amount of conductive bonding material 63 creeping up into the through hole 332 is suppressed, and an appropriate amount of insertion of the metal pin 333 into the holder 331 can be secured.

[0125] In the bonding structure of semiconductor device A1, the holder 331 includes a cylindrical portion 331a and a lower end flange portion 331c. For example, in a plan view, the entire outer edge of the lower end flange portion 331c is located outward from the outer edge of the cylindrical portion 331a. This configuration allows for a larger volume of the through hole 420c connected to the opening 420b, while suppressing the lower end of the holder 331 in the thickness direction z from entering the opening 420b. In other words, it is effective in suppressing the amount of conductive bonding material 63 creeping up into the through hole 332.

[0126] In the bonding structure of semiconductor device A1, each conductive bonding material 63 includes an inlet portion 631 formed in the through hole 332 of the holder 331. With this configuration, the conductive bonding material 63 can increase the bonding strength between the holder 331 and each conductive part 421 to 424 through the inlet portion 631. In particular, in the bonding structure of semiconductor device A1, the ratio of the dimension h1 in the thickness direction z of the inlet portion 631 to the diameter r1 of the through hole 332 (h1 / r1 × 100) is 10% or more and 65% or less. With this configuration, since the ratio is 10% or more, the bonding strength is increased, and since the ratio is 65% or less, an appropriate amount of insertion of the metal pin 333 into the holder 331 can be secured.

[0127] In the bonding structure of semiconductor device A1, in a plan view, the outer edge of each conductive bonding material 63 is located outward from the outer edge 331d of the holder 331 of each control terminal 33. With this configuration, in the thickness direction z, the conductive bonding material 63 is interposed between the lower end flange portion 331c of each holder 331 and the terminal bonding surface 420a of each conductive portion 421 to 424. Therefore, the holder 331 of each control terminal 33 is properly bonded to each conductive portion 421 to 424.

[0128] In semiconductor device A1, multiple control terminals 33 are connected to a control system circuit board on which semiconductor device A1 is mounted. In this case, the control system circuit board may be positioned, for example, above the semiconductor device A1 in the thickness direction z. Also, the first power terminal 31 (multiple input terminals 31A, 31B) and the second power terminal 32 (two output terminals 32A) are connected to a power system circuit board on which semiconductor device A1 is mounted. In this case, the power system circuit board may be positioned, for example, next to the semiconductor device A1 in the first direction x. In such a configuration, the power system circuit board to which the first power terminal 31 and the second power terminal 32 are connected and the control system circuit board to which each control terminal 33 (metal pin 333) is connected can be positioned apart in the thickness direction z. As a result, firstly, the degree of freedom regarding the arrangement of signal terminals in semiconductor device A1 is improved. Secondly, the degree of freedom regarding the routing and length of signal wiring in semiconductor device A1 is improved. Thirdly, the degree of freedom regarding the arrangement of circuit boards by the user when using semiconductor device A1 is improved.

[0129] Next, other examples of the joint structure of this disclosure will be described with reference to Figures 23 to 30.

[0130] Figure 23 shows an example of a configuration in which the diameter r2 of the opening 420b is larger than the diameter r2 of the opening 420b in semiconductor device A1, in the bonding structure between each conductive part 421-424 and each control terminal 33. Figure 23 is an enlarged cross-sectional view of the main part corresponding to Figure 21. Figure 23 shows an example of a conductive bonding material 63 when the diameter r2 of the opening 420b in a plan view is, for example, about 1.6 mm. In the example shown in Figure 23, the void 630 is connected to the through hole 332, so the conductive bonding material 63 does not include the inflow portion 631. This is because the volume of the through hole 420c has increased due to the increase in the diameter r2 of the opening 420b.

[0131] Figure 24 shows an example configuration in the joint structure between each conductive part 421-424 and each control terminal 33, where each conductive part 421-424 is provided with a recess 420d instead of a through hole 420c. Figure 24 is an enlarged cross-sectional view of the main part corresponding to Figure 21. As shown in Figure 24, the recess 420d connects to the opening 420b, similar to the through hole 420c. The depth of the recess 420d is, for example, 50 μm to 200 μm. The depth of the recess 420d is the dimension along the thickness direction z from the terminal joint surface 420a to the bottom of the recess 420d. For example, if the dimension in the thickness direction z of each conductive part 421-424 (thickness of the main surface metal layer 42) is large, a recess 420d may be formed instead of a through hole 420c. This is because even a recess 420d can secure an appropriate volume. For example, if the thickness of the main surface metal layer 42 (the dimension in the thickness direction z of each conductive part 421 to 424) is 200 μm or more, a depression 420d may be formed. In the example shown in Figure 24, since the conductive bonding material 63 does not come into contact with the insulating layer 41, the filling portion 632 fills the entire depression 420d. In other words, in the bonding structure shown in Figure 24, no void 630 is formed.

[0132] Figures 25 to 30 show examples of configurations where the shape of the opening 420b in a plan view differs in the joint structure between each conductive part 421 to 424 and each control terminal 33. Figures 25 to 30 are enlarged views of the main parts corresponding to Figure 8. However, in Figures 25 to 30, the holder 331 of each control terminal 33 is shown with dashed lines, and the metal pins 333 and conductive bonding materials 63 of each control terminal 33 are omitted.

[0133] In the example shown in Figure 25, the openings 420b of each conductive part 421-424 overlap the through-hole 332 in a plan view. In other words, the bonding structure shown in Figure 25 has a smaller diameter r2 of the opening 420b in a plan view compared to the bonding structure in semiconductor device A1.

[0134] In the example shown in Figure 26, the openings 420b of each conductive part 421 to 424 are formed in an elliptical shape in plan view, and in plan view, a part of the outer edge of the opening 420b is outside the outer edge 331d of the holder 331. In the example shown in Figure 26, the longitudinal direction of the opening 420b in plan view is along the first direction x, but unlike this configuration, the longitudinal direction may be along any direction perpendicular to the thickness direction z.

[0135] In the example shown in Figure 27, the openings 420b of each conductive part 421 to 424 are formed in a rectangular shape in a plan view.

[0136] In the example shown in Figure 28, similar to the example shown in Figure 27, the openings 420b of each conductive part 421 to 424 are formed in a rectangular shape in plan view. However, unlike the example shown in Figure 27, in plan view, a part of the outer edge of the opening 420b is outside the outer edge 331d of the holder 331. In the example shown in Figure 28, the longitudinal direction of the opening 420b in plan view is along the first direction x. However, unlike this configuration, the longitudinal direction may be along any direction perpendicular to the thickness direction z.

[0137] In the example shown in Figure 29, each conductive portion 421-424 has a plurality of openings 420b, and each of the plurality of openings 420b is formed linearly in a plan view. In each conductive portion 421-424, each of the plurality of openings 420b extends in the second direction y and is arranged parallel to each other. In the example shown in Figure 29, each of the plurality of openings 420b extends along the second direction y, but each may extend along any direction perpendicular to the thickness direction z.

[0138] In the example shown in Figure 30, the openings 420b of each conductive part 421-424 are formed in a grid pattern in plan view, where two lines along the first direction x and two lines along the second direction y intersect with each other. Unlike the example shown in Figure 30, the number of lines along the first direction x and the number of lines along the second direction y may each be three or more. In plan view, the lines along the first direction x and the lines along the second direction y are not limited to being orthogonal as shown in Figure 30, but only need to intersect.

[0139] Even with the bonding structure shown in Figures 23 to 30, similar to the bonding structure between each conductive part 421 to 424 and each control terminal 33 in semiconductor device A1, in a plan view, at least a portion of the outer edge of the opening 420b is inside the outer edge 331d of the holder 331. Therefore, it is possible to suppress the creeping of the conductive bonding material 63 into the through hole 332 and to ensure an appropriate insertion amount of the metal pin 333 into the holder 331.

[0140] In semiconductor device A1, the case where multiple control terminals 33 include holders 331 and metal pins 333 has been described, but both or one of the first power terminal 31 and the second power terminal 32 may be configured similarly to each control terminal 33. For example, in semiconductor device A1, the second power terminal 32 (each output terminal 32A) may be configured to include a holder and metal pins similar to the holders 331 and metal pins 333 of each control terminal 33. Figure 31 shows a semiconductor device according to such a modified example. In the example shown in Figure 31, the holder of each output terminal 32A is joined to, for example, the second conductor 24B. In this case, a through hole or recess similar to the through hole 420c or recess 420d should be formed in the portion of the second conductor 24B to which the holder of each output terminal 32A is joined. As shown in Figure 31, since the main circuit current flows through the first power terminal 31 and the second power terminal 32, it is preferable to make the metal pins thicker than the metal pins 333 of the multiple control terminals 33. As described above, the bonding structure of this disclosure is not limited to signal terminals, but can also be applied to power terminals.

[0141] Although the junction structure of this disclosure has been shown as being applied to a semiconductor device comprising a switching element, it can also be applied to a semiconductor device comprising semiconductor elements other than switching elements (e.g., diodes) or an electronic device comprising electronic components other than semiconductor elements (e.g., resistors, inductors, transformers, capacitors, and integrated circuits).

[0142] The bonding structures and semiconductor devices described herein are not limited to the embodiments described above. The specific configurations of the bonding structures and semiconductor devices described herein can be modified in various ways. For example, this disclosure includes the embodiments described in the following appendix. Note 1. A conductive substrate having a conductive portion, A conductive cylindrical holder, and a terminal including a metal pin inserted into the holder, A conductive bonding material that joins the conductive part and the holder, It is equipped with, The metal pin includes a straight portion extending along the thickness direction of the conductive portion, The holder has a first through hole that extends in the thickness direction and into which the straight portion of the metal pin is inserted. The conductive portion has a terminal joining surface to which the holder is joined, and an opening formed on the terminal joining surface. A joining structure in which, when viewed in the thickness direction, at least a portion of the outer edge of the opening is located inside the outer edge of the holder. Note 2. The holder includes a cylindrical portion and an upper end flange portion and a lower end flange portion that are arranged to sandwich the cylindrical portion in the thickness direction. The first through hole spans the cylindrical portion, the upper flange portion, and the lower flange portion in the thickness direction. The joining structure described in Appendix 1, wherein the lower end flange is joined to the conductive portion. Note 3. The joining structure as described in Appendix 2, wherein, when viewed in the thickness direction, the outer peripheral edge of the holder is the outer peripheral edge of the lower end flange. Note 4. The joining structure described in Appendix 3, wherein, when viewed in the thickness direction, the entire outer edge of the opening overlaps the lower end flange. Note 5. The joining structure according to any one of the appendices 2 to 4, wherein each of the cylindrical portion and the first through hole is circular when viewed in the thickness direction. Note 6. The conductive bonding material includes an inflow portion formed in the first through hole, The inflow portion is a joining structure as described in Appendix 5, which is connected in the thickness direction from the side of the holder where the conductive portion is located. Note 7. The joining structure according to Appendix 6, wherein the ratio of the dimension of the inlet portion in the thickness direction to the diameter of the first through hole is 10% or more and 65% or less. Note 8. The bonding structure according to any one of Appendix 1 to Appendix 7, wherein, when viewed in the thickness direction, the outer peripheral edge of the conductive bonding material is outward from the outer peripheral edge of the holder. Note 9. The conductive portion includes a second through-hole connected to the opening, The conductive bonding material is in contact with the inner surface of the second through hole and has a bonding structure as described in any of Appendix 1 to Appendix 8. Note 10. The conductive substrate includes an insulating layer, The conductive portion is laminated on one side of the insulating layer in the thickness direction, The insulating layer includes an exposed portion that overlaps the second through-hole when viewed in the thickness direction, The bonding structure according to Appendix 9, wherein at least a portion of the exposed portion does not come into contact with the conductive bonding material. Note 11. The conductive portion is a joint structure according to any one of Appendix 1 to Appendix 8, including a recess connected to the opening. Note 12. The conductive bonding material includes a filling portion formed in the recess, as described in Appendix 11. Note 13. A joint structure described in any of Appendix 1 to Appendix 12, A semiconductor device comprising a semiconductor element electrically connected to the aforementioned terminal. Note 14. The semiconductor device described in Appendix 13, wherein the terminal is a control terminal for controlling the semiconductor element. Note 15. The device further comprises a first power terminal and a second power terminal, each electrically connected to the semiconductor element, The first power supply terminal receives the first power supply voltage, The second power supply terminal is a semiconductor device as described in Appendix 14, to which the second power supply voltage is input. Note 16. The device further comprises a first conductor and a second conductor spaced apart from each other in a first direction perpendicular to the thickness direction, The semiconductor element includes a first semiconductor element bonded to the first conductor and a second semiconductor element bonded to the second conductor. The conductive substrate includes a first conductive substrate bonded to the first conductor and a second conductive substrate bonded to the second conductor. The conductive portion includes a first conductive portion of the first conductive substrate and a second conductive portion of the second conductive substrate. The first power terminal includes a first input terminal connected to the first conductor and a second input terminal connected to the second semiconductor element. The second power terminal is an output terminal connected to the second conductor, The semiconductor device according to Appendix 15, wherein the control terminal includes a first control terminal connected to the first conductive portion and controlling the first semiconductor element, and a second control terminal connected to the second conductive portion and controlling the second semiconductor element. Note 17. Each of the first semiconductor element and the second semiconductor element is a switching element that performs switching operations. The first control terminal includes a first drive terminal for controlling the switching operation of the first semiconductor element and a first detection terminal for detecting the conduction state of the first semiconductor element. The semiconductor device according to Appendix 16, wherein the second control terminal includes a second drive terminal for controlling the switching operation of the second semiconductor element and a second detection terminal for detecting the conduction state of the second semiconductor element. Note 18. The device further comprises a resin member covering a portion of the first control terminal and a portion of the second control terminal, the first conductive substrate and the second conductive substrate, and the first semiconductor element and the second semiconductor element. The semiconductor device according to Appendix 16 or Appendix 17, wherein each of the first control terminal and the second control terminal protrudes from the resin member in the thickness direction. Note 19. The resin member has a resin main surface and a resin back surface that are spaced apart in the thickness direction, and a resin side surface sandwiched between the resin main surface and the resin back surface in the thickness direction. The resin side surface faces the first direction, The semiconductor device described in Appendix 18, wherein the first power terminal and the second power terminal protrude from the resin side in the first direction. [Explanation of Symbols]

[0143] A1: Semiconductor device 1: Semiconductor element 1A: First semiconductor element 1B: Second semiconductor element 10a: Main surface of the element 10b: Back surface of the element 11: First main surface electrode 12: Second main surface electrode 13: Third main surface electrode 15: Back surface electrode Q1: Switching function unit D1: Diode function unit D2: Diode 2: Support substrate 21: Insulating layer 21a: Main surface 21b: Back surface 22: Main surface metal layer 22A: First support part 22B: Second support part 221: Bonding layer 23: Backside metal layer 24A: First conductor 24B: Second conductor 240a: Recess 241: Substrate 242: Main surface bonding layer 243: Back surface bonding layer 25A, 25B: Conductive bonding material 251: Base layer 252: Upper layer 253: Lower layer 31: 1st power supply terminal 31A: Input terminal 31B: Input terminal 32: Second power supply terminal 32A: Output terminal 33: Control terminal 331: Holder 331a: Cylindrical part 331b: Upper flange part 331c: Lower flange part 331d: Outer edge 332: Through hole 333: Metal pin 333a: Straight section 34: First control terminal 34A: First drive terminal 34B, 34C, 34D: First detection terminal; 35: Second control terminal 35A: Second drive terminal; 35B, 35C: Second detection terminals 4: Conductive substrate 4A: First conductive substrate 4B: Second conductive substrate 41: Insulating layer 41a: Main surface 41b: Back surface 410: Exposed part 42: Main surface metal layer 420a: Terminal bonding surface 420b: Opening 420c: Through hole 420d: Recess 421, 422, 423, 424: Conductive parts 43: Metal layer on the back surface 49: Bonding material 5: Conductive material 51: First conductive member 52: Second conductive member 521: First wiring section 522: Second wiring section 522a: Recessed area 523: Third wiring section 523a: Convex region 524: Fourth wiring section 53: Opening 591,592,593: Conductive bonding material 61,61A,61B: Conductive bonding material 611: Base layer 612: Upper layer 613: Lower layer 63,63A,63B: Conductive bonding material 630: Air gap 631: Inflow section 632: Filling section 651: Wire 651A: First wire 651B: Second wire 652: Wire 652A: First wire 652B: Second wire 653: Wire 653A: First wire 653B: Second wire 654: Wire 654B: Second wire 7: Resin component 71: Main resin surface 72: Back surface of resin 731~734: Side surface of resin 732a: recess 751: first projection 751a: first projection end face 752: Second protrusion 76: Resin cavity 77: Resin part 78: Resin-filled section

Claims

1. A conductive substrate having a conductive portion, A conductive cylindrical holder, and a terminal including a metal pin inserted into the holder, A conductive bonding material that joins the conductive part and the holder, It is equipped with, The metal pin includes a straight portion extending along the thickness direction of the conductive portion, The holder has a first through hole that extends in the thickness direction and into which the straight portion of the metal pin is inserted. The conductive portion has a terminal joining surface to which the holder is joined, and an opening formed on the terminal joining surface. Viewed in the thickness direction, at least a portion of the outer edge of the opening is located inward from the outer edge of the holder. The holder includes a cylindrical portion and an upper end flange portion and a lower end flange portion that are arranged to sandwich the cylindrical portion in the thickness direction. The first through hole spans the cylindrical portion, the upper flange portion, and the lower flange portion in the thickness direction. A joining structure in which the lower end flange is joined to the conductive part.

2. The joining structure according to claim 1, wherein, viewed in the thickness direction, the outer peripheral edge of the holder is the outer peripheral edge of the lower end flange.

3. The joining structure according to claim 2, wherein, viewed in the thickness direction, the entire outer edge of the opening overlaps the lower end flange.

4. The joining structure according to claim 1, wherein each of the cylindrical portion and the first through hole is circular when viewed in the thickness direction.

5. The conductive bonding material includes an inflow portion formed in the first through hole, The joining structure according to claim 4, wherein the inflow portion is connected to the holder from the side where the conductive portion is located in the thickness direction.

6. The joining structure according to claim 5, wherein the ratio of the dimension of the inlet portion in the thickness direction to the diameter of the first through hole is 10% or more and 65% or less.

7. The bonding structure according to claim 1, wherein, viewed in the thickness direction, the outer peripheral edge of the conductive bonding material is outward from the outer peripheral edge of the holder.

8. The conductive portion includes a second through-hole connected to the opening, The bonding structure according to claim 1, wherein the conductive bonding material is in contact with the inner surface of the second through hole.

9. The conductive substrate includes an insulating layer, The conductive portion is laminated on one side of the insulating layer in the thickness direction, The insulating layer includes an exposed portion that overlaps the second through-hole when viewed in the thickness direction, The bonding structure according to claim 8, wherein at least a portion of the exposed portion does not come into contact with the conductive bonding material.

10. The bonding structure according to claim 1, wherein the conductive portion includes a recess connected to the opening.

11. The bonding structure according to claim 10, wherein the conductive bonding material includes a filling portion formed in the recess.

12. A conductive substrate having a conductive portion, A conductive cylindrical holder, and a terminal including a metal pin inserted into the holder, A conductive bonding material that joins the conductive part and the holder, It is equipped with, The metal pin includes a straight portion extending along the thickness direction of the conductive portion, The holder has a first through hole that extends in the thickness direction and into which the straight portion of the metal pin is inserted. The conductive portion has a terminal joining surface to which the holder is joined, and an opening formed on the terminal joining surface. Viewed in the thickness direction, at least a portion of the outer edge of the opening is located inward from the outer edge of the holder. A bonding structure in which, when viewed in the thickness direction, the outer peripheral edge of the conductive bonding material is outward from the outer peripheral edge of the holder.

13. A conductive substrate having a conductive portion, A conductive cylindrical holder, and a terminal including a metal pin inserted into the holder, A conductive bonding material that joins the conductive part and the holder, It is equipped with, The metal pin includes a straight portion extending along the thickness direction of the conductive portion, The holder has a first through hole that extends in the thickness direction and into which the straight portion of the metal pin is inserted. The conductive portion has a terminal joining surface to which the holder is joined, and an opening formed on the terminal joining surface. Viewed in the thickness direction, at least a portion of the outer edge of the opening is located inward from the outer edge of the holder. The conductive portion includes a second through-hole connected to the opening, The conductive bonding material is in contact with the inner surface of the second through hole. The conductive substrate includes an insulating layer, The conductive portion is laminated on one side of the insulating layer in the thickness direction, The insulating layer includes an exposed portion that overlaps the second through-hole when viewed in the thickness direction, A bonding structure in which at least a portion of the exposed portion does not come into contact with the conductive bonding material.

14. A joining structure according to any one of claims 1 to 13, A semiconductor element electrically connected to the aforementioned terminal, A semiconductor device equipped with a semiconductor device.

15. The semiconductor device according to claim 14, wherein the terminal is a control terminal for controlling the semiconductor element.

16. Each further comprises a first power terminal and a second power terminal, each electrically connected to the semiconductor element, The first power supply terminal receives the first power supply voltage, The semiconductor device according to claim 15, wherein the second power supply terminal is to which the second power supply voltage is input.

17. The device further comprises a first conductor and a second conductor spaced apart from each other in a first direction perpendicular to the thickness direction, The semiconductor element includes a first semiconductor element bonded to the first conductor and a second semiconductor element bonded to the second conductor. The conductive substrate includes a first conductive substrate bonded to the first conductor and a second conductive substrate bonded to the second conductor. The conductive portion includes a first conductive portion of the first conductive substrate and a second conductive portion of the second conductive substrate. The first power supply terminal includes a first input terminal connected to the first conductor and a second input terminal connected to the second semiconductor element. The second power terminal is an output terminal connected to the second conductor, The semiconductor device according to claim 16, wherein the control terminal includes a first control terminal joined to the first conductive portion and controlling the first semiconductor element, and a second control terminal joined to the second conductive portion and controlling the second semiconductor element.

18. Each of the first semiconductor element and the second semiconductor element is a switching element that performs switching operations. The first control terminal includes a first drive terminal for controlling the switching operation of the first semiconductor element and a first detection terminal for detecting the conduction state of the first semiconductor element. The semiconductor device according to claim 17, wherein the second control terminal includes a second drive terminal for controlling the switching operation of the second semiconductor element and a second detection terminal for detecting the conduction state of the second semiconductor element.

19. The device further comprises a resin member covering a portion of the first control terminal and a portion of the second control terminal, the first conductive substrate and the second conductive substrate, and the first semiconductor element and the second semiconductor element. The semiconductor device according to claim 17, wherein each of the first control terminal and the second control terminal protrudes from the resin member in the thickness direction.

20. The resin member has a resin main surface and a resin back surface that are spaced apart in the thickness direction, and a resin side surface sandwiched between the resin main surface and the resin back surface in the thickness direction. The resin side surface faces the first direction, The semiconductor device according to claim 19, wherein the first power terminal and the second power terminal protrude from the resin side surface in the first direction.

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