Semiconductor equipment
By thermally connecting the external electrode's side surface with a conductive material, the semiconductor device achieves enhanced heat dissipation and surge protection, addressing limitations in conventional designs.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- MINEBEA POWER SEMICON DEVICE INC
- Filing Date
- 2022-05-20
- Publication Date
- 2026-07-01
Smart Images
Figure 0007883113000001 
Figure 0007883113000002 
Figure 0007883113000003
Abstract
Description
Technical Field
[0001] The present invention relates to a semiconductor device.
Background Art
[0002] As a rectifying element used in an alternator of an automobile, for example, Patent Document 1 describes a semiconductor device having a MOSFET chip incorporating a Zener diode, a control IC chip for controlling the MOSFET chip, and a capacitor for supplying power to the MOSFET chip and the control IC chip.
[0003] FIG. 9 is a plan view for explaining a schematic configuration of a conventional semiconductor device, FIG. 10 is a cross-sectional view taken along line A-A' of FIG. 9, and FIG. 11 is a cross-sectional view taken along line B-B' of FIG. 9. In FIG. 9, illustration of the lead frame 50 and the sealing material 60 in FIGS. 10 and 11 is omitted for convenience of explanation.
[0004] A conventional semiconductor device 101 has a substantially the same basic configuration as that of Patent Document 1 and has a semiconductor chip 10. The semiconductor chip 10 is a MOSFET chip incorporating a Zener diode, and has a gate electrode 13, a surface electrode 11 which is a source electrode, and a protective film 20 on the surface side which is one surface, and has a back surface electrode 12 which is a drain electrode on the back surface side which is the other surface. The semiconductor device 101 has an external electrode 40 joined to the surface electrode 11 via a conductive bonding material 30, a lead frame 50 joined to the back surface electrode 12 via a conductive bonding material 70, and a sealing material 60 for exposing a part of the external electrode 40 and the lead frame 50 and sealing the whole.
[0005] Note that the semiconductor device 101 has a control IC chip for controlling the MOSFET chip and a capacitor for supplying power to the MOSFET chip and the control IC chip, as in Patent Document 1, in order to function as a rectifying element, but illustration and description thereof are omitted here. Further, the external electrode 40 is connected to a lead electrode serving as an external electrode, and the lead frame 50 is connected to a base electrode serving as an external electrode, but illustration and description thereof are omitted. [Prior art documents] [Patent Documents]
[0006] [Patent Document 1] Japanese Patent Publication No. 2019-33144 [Overview of the project] [Problems that the invention aims to solve]
[0007] According to the conventional semiconductor device 101, even if a surge voltage is applied, it can be received by the Zener diode, thus protecting the MOSFET from damage.
[0008] However, when a surge voltage is applied, the Zener diode generates heat. Therefore, if a Zener diode is built into the MOSFET chip, the heat is transferred to the MOSFET, potentially damaging the MOSFET chip containing the Zener diode. This presented a problem in that the surge withstand capability could not be increased.
[0009] To improve heat dissipation, one might consider increasing the area of the external electrode 40, but the presence of the gate electrode 13 limits the layout. Therefore, one might consider making the external electrode 40 convex in plan view, avoiding the gate electrode 13. However, there is a problem in that it is difficult to manufacture an external electrode 40 of this shape.
[0010] The problem that this invention aims to solve is to provide a semiconductor device with high heat dissipation capabilities. [Means for solving the problem]
[0011] To solve the above-mentioned problems, the present invention provides a semiconductor device that includes, for example, a semiconductor chip having a first electrode on one side and a second electrode bonded to the first electrode via a conductive bonding material, characterized in that the region of the first electrode that is outside the region of the second electrode has a thermally conductive material that contacts the side surface of the second electrode and thermally connects the side surface of the second electrode and the first electrode. [Effects of the Invention]
[0012] According to the present invention, heat can be dissipated from the side surface of the second electrode via a thermally conductive material, thereby enabling the realization of a semiconductor device with high heat dissipation capabilities. [Brief explanation of the drawing]
[0013] [Figure 1] A plan view illustrating the schematic configuration of the semiconductor device of Example 1. [Figure 2] Cross-sectional view at line A-A' in Figure 1. [Figure 3] Cross-sectional view of line B-B' in Figure 1. [Figure 4] Cross-sectional view of line C-C' in Figure 1. [Figure 5] A plan view illustrating the schematic configuration of the semiconductor device of Example 2. [Figure 6] Figure 5 shows a cross-sectional view along the line B-B'. [Figure 7] Figure 5 shows a cross-sectional view along the line C-C'. [Figure 8] A cross-sectional view illustrating the schematic configuration of the semiconductor device of Example 3. [Figure 9] A plan view illustrating the schematic configuration of a conventional semiconductor device. [Figure 10] Cross-sectional view at line A-A' in Figure 9. [Figure 11] Figure 9 shows a cross-sectional view along the line B-B'. [Modes for carrying out the invention]
[0014] The embodiments of the present invention will be described below with reference to the drawings. In each figure and each embodiment, the same or similar components are denoted by the same reference numerals, and redundant explanations are omitted.
Example
[0015] FIG. 1 is a plan view for explaining the schematic configuration of the semiconductor device of Example 1, FIG. 2 is a cross-sectional view taken along line A-A' of FIG. 1, FIG. 3 is a cross-sectional view taken along line B-B' of FIG. 1, and FIG. 4 is a cross-sectional view taken along line C-C' of FIG. 1. In FIG. 1, for convenience of explanation, the illustration of the lead frame 50 and the encapsulant 60 in FIGS. 2 to 4 is omitted.
[0016] The semiconductor device 100 of Example 1 has a semiconductor chip 10. The semiconductor chip 10 is, for example, a MOSFET chip incorporating a Zener diode, and has a gate electrode 13, a surface electrode 11 which is a source electrode, and a protective film 20 on the surface side which is one surface, and has a back surface electrode 12 which is a drain electrode on the back surface side which is the other surface. The semiconductor device 100 has an external electrode 40 (second electrode) joined to the surface electrode 11 (first electrode) via a conductive bonding material 30, a lead frame 50 joined to the back surface electrode 12 via a conductive bonding material 70, and an encapsulant 60 which exposes a part of the external electrode 40 and the lead frame 50 and seals the whole.
[0017] The external electrode 40 is a block-shaped electrode also called a source block, and has functions of heat dissipation and a spacer. Further, the external electrode 40 functions as an upper external electrode, and the lead frame 50 functions as a lower external electrode. As the conductive bonding material 30 and the conductive bonding material 70, for example, solder, silver paste, or the like can be used. As the encapsulant 60, for example, resin can be used.
[0018] Note that the semiconductor device 100 has a control IC chip for controlling the MOSFET chip and a capacitor for supplying power to the MOSFET chip and the control IC chip in order to function as a rectifying element, but the illustration and description thereof are omitted.
[0019] The points in which the semiconductor device 100 of Example 1 is different from the conventional semiconductor device 101 are the shape of the conductive bonding material 30 and the point of newly having a heat conductive material 80.
[0020] The surface electrode 11 has a protrusion that extends outward from the external electrode 40 when viewed from above, and the conductive bonding material 30 is also provided on this protrusion. The semiconductor device 100 has a thermally conductive material 80 that overlaps this protrusion. As a result, the thermally conductive material 80 is thermally connected to the surface electrode 11 via the conductive bonding material 30.
[0021] As the thermally conductive material 80, for example, sintered metals such as sintered silver or sintered copper can be used, but are not limited to these. It is desirable that the thermally conductive material 80 has a higher thermal conductivity than the conductive bonding material 30.
[0022] The thermally conductive material 80 is in contact with the side surface of the external electrode 40, and thermally connects the side surface of the external electrode 40 to the surface electrode 11. Therefore, heat can be dissipated from the side surface of the external electrode 40 via the thermally conductive material 80, thus realizing a semiconductor device 100 with high heat dissipation.
[0023] Furthermore, because the heat dissipation is improved, the heat generated from the Zener diode when a surge voltage is applied can be efficiently dissipated, thus improving the surge withstand capability when using a MOSFET chip with a built-in Zener diode.
[0024] As described above, the semiconductor device 100 of Example 1 has a semiconductor chip 10 having a first electrode (surface electrode 11) and a second electrode (external electrode 40) bonded to the first electrode via a conductive bonding material 30. The region of the first electrode that is outside the second electrode has a thermally conductive material 80 that is in contact with the side surface of the second electrode and thermally connects the side surface of the second electrode and the first electrode. As a result, heat can be dissipated from the side surface of the second electrode via the thermally conductive material 80, thus realizing a semiconductor device 100 with high heat dissipation. [Examples]
[0025] Example 2 is a modification of Example 1.
[0026] Figure 5 is a plan view illustrating the schematic configuration of the semiconductor device of Embodiment 2, Figure 6 is a cross-sectional view taken along line B-B' of Figure 5, and Figure 7 is a cross-sectional view taken along line C-C' of Figure 5. For the sake of clarity, Figure 5 omits the illustration of the lead frame 50 and the sealing material 60 as shown in Figures 6 and 7.
[0027] In Example 2, the difference from Example 1 is that, as shown in Figure 6, the thermally conductive material 80 is directly thermally connected to the surface electrode 11. Therefore, although the surface electrode 11 has protrusions, the conductive bonding material 30 is not formed on the protrusions, and the thermally conductive material 80 is in direct contact with the surface electrode 11.
[0028] Generally, the sintered metal used in the thermally conductive material 80 has a higher thermal conductivity than the solder or silver paste used in the conductive bonding material 30. Therefore, compared to Example 1, in which heat is dissipated by the thermally conductive material 80 via the conductive bonding material 30, Example 2, in which heat is dissipated by the thermally conductive material 80 without the conductive bonding material 30, can realize a semiconductor device 100 with higher heat dissipation.
[0029] Since the rest of the explanation is the same as in Example 1, redundant explanations will be omitted. [Examples]
[0030] Example 3 is an example in which the semiconductor device of Example 1 or Example 2 is applied to a press-fit type semiconductor device.
[0031] Figure 8 is a cross-sectional view illustrating the schematic configuration of the semiconductor device of Example 3. Note that, for the sake of clarity, the front electrode 11 and back electrode 12 are omitted from the illustration in Figure 8.
[0032] The semiconductor device 200 of Example 3 comprises the semiconductor device 100 of Example 1 or Example 2, a lead electrode 120 joined to an external electrode 40 via a conductive bonding material 140, a base electrode 110 joined to a lead frame 50 via a conductive bonding material 130, and a sealing material 150 that seals the entire device while exposing a portion of the base electrode 110 and the lead electrode 120.
[0033] The base electrode 110 has a base 111, and the semiconductor device 100 is bonded to the base 111. The lead electrode 120 has a lead 121, which is exposed from the sealing material 150.
[0034] The semiconductor device 200 functions as a rectifier element with the base electrode 110 as one external electrode and the lead electrode 120 as the other external electrode. The semiconductor device 200 is used by attaching it to the alternator by press-fitting the base electrode 110 into a hole provided in the alternator. [Examples]
[0035] Example 4 is an application example of Example 1 or Example 2.
[0036] In the embodiments described so far, a MOSFET chip with a built-in Zener diode was used as the semiconductor chip 10, and a source block bonded to the surface electrode 11 of the semiconductor chip 10 was used as the external electrode 40. However, the invention is not limited to this, and from the viewpoint of realizing a semiconductor device with high heat dissipation, it can be applied to semiconductor devices in general that have heat dissipation electrodes on a semiconductor chip.
[0037] In other words, the thermally conductive material 80 described above can be applied to a semiconductor device having a semiconductor chip with a first electrode on one side and a second electrode bonded to the first electrode via a conductive bonding material.
[0038] Although embodiments of the present invention have been described above, the present invention is not limited to the configurations described in the embodiments, and various modifications are possible within the scope of the technical idea of the present invention. Furthermore, some or all of the configurations described in each embodiment may be combined and applied. [Explanation of Symbols]
[0039] 10 Semiconductor Chips 11. Surface electrode (first electrode) 12 Backside electrodes 13 gates 20 Protective film 30 Conductive bonding material 40 External electrode (second electrode) 50 Lead Frames 60 Sealing material 70 Conductive bonding material 80 Thermally conductive materials 100 Semiconductor Equipment 101 Semiconductor Equipment 110 base electrode 111 Pedestal 120 lead electrodes 121 Reed 130 Conductive bonding material 140 Conductive bonding material 150 sealing material 200 Semiconductor Equipment
Claims
1. A semiconductor device having a semiconductor chip having a first electrode on one side and a second electrode bonded to the first electrode via a conductive bonding material, A semiconductor device characterized in that the region of the first electrode that is outside the region of the second electrode has a thermally conductive material that is in contact with the side surface of the second electrode and thermally connects the side surface of the second electrode and the first electrode.
2. In claim 1, The semiconductor device is characterized in that the thermally conductive material has a higher thermal conductivity than the conductive bonding material.
3. In claim 1, The semiconductor device is characterized in that the conductive bonding material is solder or silver paste.
4. In claim 1, The semiconductor device is characterized in that the thermally conductive material is a sintered metal.
5. In claim 1, The semiconductor device is characterized in that the thermally conductive material is thermally connected to the first electrode via the conductive bonding material.
6. In claim 1, The semiconductor device is characterized in that the thermally conductive material is directly thermally connected to the first electrode.
7. In claim 1, The semiconductor device is characterized in that the first electrode has a protruding portion that protrudes outward from the second electrode when viewed from above, and the thermally conductive material is provided on the protruding portion.
8. In claim 1, The semiconductor device is characterized in that the semiconductor chip is a MOSFET chip with a built-in Zener diode.