Intake device and thin film deposition device

Abstract

To provide an air intake device, a thin film deposition device, and a thin film deposition method for improving the problem of uneven thickness of the deposited film layer.SOLUTION: An air intake device includes an intake assembly 110 and a speed regulator assembly 120, the intake assembly is used to ventilate the reaction gas supplied from a gas supply device to a reaction chamber, and the speed regulator assembly is provided between the intake assembly and the gas supply device or at the exhaust end of the intake assembly, and is used to increase the speed of the reaction gas vented to the reaction chamber. By increasing the speed of the reaction gas vented to the reaction chamber, the point where the vector sum of its own speed on a wafer 400 and the intake speed of the reaction gas is zero can be eliminated, the stagnation layer of the reaction gas on the wafer can be uniformly distributed, and the uniformity of the thickness of the film layer formed by deposition can be further improved.SELECTED DRAWING: Figure 8

Description

Technical Field

[0001] This application belongs to the technical field of semiconductor manufacturing devices, and specifically relates to an intake device, a thin film deposition device, and a thin film deposition method.

Background Art

[0002] When a thin film deposition device deposits a thin film, a wafer is placed on a susceptor in a reaction chamber for deposition, and a reaction gas is introduced from one side in a first direction of the reaction chamber. The reaction gas that is not completely depleted is discharged from the other side in the first direction of the reaction chamber. The reaction gas forms a gas retention layer on the wafer. The smaller the thickness of the gas retention layer on the wafer, the smaller the thickness of the film layer formed by deposition. Since the thickness of the gas retention layer is non-uniform, the thickness of the film layer formed by deposition is also non-uniform.

[0003] Conventional thin film deposition devices introduce a compensation gas along a second direction of the reaction chamber perpendicular to the first direction of the reaction chamber. When measures are taken to introduce the compensation gas, the problem of non-uniformity of the film layer thickness can be improved to a certain extent. However, it becomes more difficult to introduce the compensation gas to increase the total reaction gas and maintain the process parameters of the reaction gas. At the same time, even when measures are taken to introduce the compensation gas, it can only compensate for the thickness of the film layer in the edge region of the wafer, and cannot guarantee the uniformity of the thickness of the entire film layer.

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of this application is to provide, at least, an intake device, a thin film deposition device, and a thin film deposition method for improving the problem of non-uniformity of the thickness of the deposited film layer.

Means for Solving the Problems

[0005] To achieve the above object, this application provides an intake device, the intake device is connected to a gas supply device, and the intake device An intake assembly for supplying the reaction gas from the aforementioned air supply device to the reaction chamber, The system includes a speed control assembly provided between the intake assembly and the air supply device, or at the exhaust end of the intake assembly, for increasing the velocity of the reaction gas supplied to the reaction chamber.

[0006] Selectively, the speed control assembly includes a flow straightening cover, the flow straightening cover includes an intake port and an exhaust port, and the flow area of ​​the intake port of the flow straightening cover is larger than the flow area of ​​the exhaust port of the flow straightening cover.

[0007] Selectively, the rectifier cover is provided at the exhaust end of the intake assembly and is integrally connected to the intake assembly.

[0008] Selectively, the exhaust end of the intake assembly is provided with a plurality of exhaust ports, and the plurality of rectifier covers are provided in one-to-one correspondence with the plurality of exhaust ports of the intake assembly, and the intake ports of the rectifier covers are connected to the exhaust ports of the intake assembly.

[0009] Selectively, the speed control assembly includes a paddle, which is located between the air supply device and the intake assembly.

[0010] Selectively, the speed control assembly includes a pressure control valve, which is located between the air supply device and the intake assembly.

[0011] Selectively, the speed control assembly includes a pressure sensor, which is located in a duct between the pressure control valve and the air supply device, or in a duct between the pressure control valve and the intake assembly.

[0012] Selectively, the speed control assembly includes at least two of the following: a flow rectifier cover, paddles, and pressure control valves.

[0013] The rectifier cover includes an intake port and an exhaust port, the flow area of ​​the intake port of the rectifier cover is larger than the flow area of ​​the exhaust port of the rectifier cover, the rectifier cover is provided at the exhaust end of the intake assembly and is connected to the exhaust port of the intake assembly.

[0014] Both the paddle and the pressure control valve are located between the air supply device and the intake assembly.

[0015] Selectively, the speed control assembly includes at least a paddle and a pressure control valve, and the air supply device, the pressure control valve, the paddle and the intake assembly are connected in sequence.

[0016] Selectively, the intake device further includes a gas flow controller, the gas flow controller being located between the air supply device and the speed control assembly.

[0017] This application further provides a thin film deposition apparatus including the aforementioned intake device.

[0018] The reaction chamber is connected to the intake device.

[0019] This application further provides a thin film deposition method, the thin film deposition method is The present invention provides a thin film deposition apparatus, the thin film deposition apparatus comprising a sequentially connected air supply device, an air intake device, and a reaction chamber, wherein a wafer is placed on a susceptor in the reaction chamber, a reaction gas is supplied to the reaction chamber by the air intake device, and the wafer is driven to rotate by the susceptor. The method involves obtaining the base intake velocity of the intake assembly of the air supply device, wherein the base intake velocity has a positive correlation with the flow rate of the reaction gas supplied from the air supply device, and the base intake velocity has a negative correlation with the flow area of ​​the intake assembly. The rotational speed of the wafer is obtained, and the outer edge velocity of the wafer is calculated based on the rotational speed of the wafer and the radius of the wafer. Comparing the base intake velocity and the outer edge line velocity, when the base intake velocity is smaller than the outer edge line velocity, increasing the intake velocity of the reaction gas is included.

[0020] Optionally, the intake velocity of the reaction gas is equal to or greater than the outer edge line velocity.

[0021] Optionally, the intake device includes a paddle, the paddle is provided between the intake assembly and the air supply device, and the method for increasing the intake velocity of the reaction gas is including controlling the turning on of the paddle, or the intake device includes a pressure control valve, the pressure control valve is provided between the intake assembly and the air supply device, and the method for increasing the intake velocity of the reaction gas is including reducing the flow area of the reaction gas in the pressure control valve.

[0022] Optionally, the intake device includes the paddle and the pressure control valve, both the paddle and the pressure control valve are provided between the intake assembly and the air supply device, and the method for increasing the intake velocity of the reaction gas is reducing the flow area of the reaction gas in the pressure control valve, and when the pressure control valve fails, or when the flow area of the reaction gas in the pressure control valve is reduced to the limit position, controlling the turning on of the paddle is included.

[0023] Optionally, the method for increasing the intake velocity of the reaction gas is a rectifying cover is attached to the intake end or the exhaust end of the intake assembly, the rectifying cover includes an intake port and an exhaust port, and the flow area of the intake port of the rectifying cover is larger than the flow area of the exhaust port of the rectifying cover.

[0024] Optionally, the method for increasing the intake velocity of the reaction gas is including reducing the pressure at the exhaust port of the reaction chamber.

[0025] Optionally, a method for increasing the intake rate of the reaction gas includes raising the temperature of the reaction gas in the intake device.

[0026] Optionally, the base intake rate of the intake assembly is calculated based on the air supply flow rate of the air supply device.

Advantages of the Invention

[0027] The intake device, thin film deposition device, and thin film deposition method disclosed in this application have the following effects.

[0028] In this application, the thin film deposition device includes an intake device. The intake device is connected to an air supply device. The intake device includes an intake assembly and a speed regulating assembly. The intake assembly is used to ventilate the reaction gas supplied from the air supply device into the reaction chamber. The speed regulating assembly is provided between the intake assembly and the air supply device or at the exhaust end of the intake assembly and is used to increase the speed of the reaction gas ventilated into the reaction chamber. By increasing the speed of the reaction gas ventilated into the reaction chamber, the point where the vector sum of the speed of the wafer itself and the intake rate of the reaction gas becomes zero is eliminated, the reaction gas retention layer on the wafer is uniformly distributed, and the problem of the uniformity of the thickness of the film layer formed by deposition can be further improved.

[0029] Other features and advantages of this application will become apparent from the following detailed description or will be partially acquired by implementing this application.

[0030] It should be understood that the above general description and the following detailed description are for illustrative and explanatory purposes only and do not limit the present disclosure.

Brief Description of the Drawings

[0031] The drawings herein are incorporated into the specification and constitute part of this specification, are compatible with the embodiments of the present application and are used together with the specification to interpret the principles of the present application. As will be apparent, the drawings in the following description are only a few embodiments of the present application, and those skilled in the art can obtain other drawings based on these without any creative effort. [Figure 1] This is a schematic diagram of the thin-film deposition process. [Figure 2] Figure 1 shows the distribution of the absolute values ​​of the relative radial velocity of the wafer. [Figure 3] Figure 1 shows the profile of the relative radial velocity of the wafer. [Figure 4] This is a schematic diagram of the connection between the rectifier cover and the reaction chamber in an embodiment of the present invention. [Figure 5] Figure 4 shows the distribution of the absolute values ​​of the relative radial velocity of the wafer. [Figure 6] Figure 4 shows the profile of the relative radial velocity of the wafer. [Figure 7] This is a schematic diagram of the connection between the paddle and the reaction chamber in an embodiment of the present invention. [Figure 8] This is a schematic diagram of the connection between the pressure control valve and the reaction chamber in an embodiment of the present invention. [Figure 9] This is a schematic diagram of the structure of the intake device in an embodiment of the present invention. [Figure 10] This is a flowchart illustrating the thin film deposition method in the embodiment of the present invention. [Modes for carrying out the invention]

[0032] The exemplary embodiments will be described in more detail below with reference to the drawings. However, the exemplary embodiments can be carried out in various forms and should not be limited to the examples described herein. On the contrary, these embodiments are provided to make the present application more comprehensive and complete and to comprehensively convey the concept of the exemplary embodiments to those skilled in the art.

[0033] Furthermore, the features, structures, or properties described can be combined in any suitable manner in one or more embodiments. The following description provides many specific details to give a complete understanding of the embodiments of the present application. However, those skilled in the art will be aware that the technical means of the present application can be actually implemented without one or more of the specific details, or that other methods, components, apparatus, steps, etc., can be employed. Otherwise, known methods, apparatus, implementations, or operations are not described or shown in detail to avoid obscuring any aspect of the present application.

[0034] The present application will be described in more detail below with reference to the drawings and specific embodiments. The technical features of each embodiment of the present application described below can be combined with each other, provided they do not contradict each other. The embodiments described below with reference to the drawings are illustrative and intended for interpretation purposes only, and should not be understood as limitations on the present application.

[0035] As shown in Figure 1, when the thin film deposition apparatus deposits a thin film, the wafer 400 is placed on a susceptor in the reaction chamber for deposition. The air supply device supplies reaction gas at a preset flow rate, and the intake device 100 circulates the reaction gas into the reaction chamber, with any reaction gas that has not been completely depleted being discharged from the exhaust port 301 of the reaction chamber. The reaction gas forms a gas retention layer on the wafer 400, and the smaller the thickness of the gas retention layer on the wafer 400, the smaller the thickness of the film layer formed by deposition. Because the thickness of the gas retention layer is non-uniform, the thickness of the film layer formed by deposition is also non-uniform. When the thin film deposition apparatus deposits a thin film, the wafer 400 is driven to rotate within the reaction chamber by the susceptor, which can improve the uniformity of the thickness of the film layer formed by deposition.

[0036] As shown in Figures 1 and 2, when wafer 400 rotates clockwise, the direction of the intake velocity vector of the reaction gas and the point velocity vector on the left radius of wafer 400 are opposite. The gas supply device supplies the reaction gas at a preset flow rate, and under conditions where the diameter of the gas supply duct is constant, the intake velocity of the reaction gas has a positive correlation with the gas flow rate. To improve the uniformity of the thickness of the film layer formed by deposition, wafer 400 needs to rotate within a preset range of rotation speeds.

[0037] The applicant found that, under the conditions of a preset flow rate and a preset rotation speed of the wafer 400, a reference point A exists on the left radius of the wafer 400, and the vector sum of its own velocity and the intake velocity of the reaction gas is 0. Note that, due to the limitation of the reaction gas flow rate supplied by the gas supply device, the intake velocity of the reaction gas is smaller than the linear velocity of the outer edge of the wafer 400. At points other than the left radius of the wafer 400, the velocity vector can be decomposed into two velocity vectors: a velocity vector along the direction of the intake velocity of the reaction gas and a velocity vector along the direction perpendicular to the direction of the intake velocity of the reaction gas. Here, the velocity vector perpendicular to the direction of the intake velocity of the reaction gas does not disappear due to superposition, so no points other than reference point A have a velocity vector sum of 0, and the location where this effect is most significantly affected is the region near the left radius of the wafer 400.

[0038] By superimposing the vector sum of the velocity of the wafer 400 itself and the intake velocity of the reaction gas at points on the wafer 400 where the distance from the center O of the wafer 400 is the same, a radial relative velocity profile can be formed as shown in Figure 3. As shown in Figure 3, the closer to the edge region on the wafer 400, the larger the vector sum of the velocity of the wafer itself and the intake velocity of the reaction gas becomes, the smaller the thickness of the gas retention layer becomes, and the smaller the thickness of the film layer formed by deposition. The deposition process includes chemical vapor deposition (CVD) and physical vapor deposition (PVD), and chemical vapor deposition includes epitaxial growth, where the epitaxial growth process is more significantly affected by the uniformity of the thickness of the gas retention layer.

[0039] As shown in Figures 4 and 9, in this embodiment, the intake device 100 is connected to the supply device 200. The intake device 100 includes an intake assembly 110 and a governor assembly 120. The intake assembly 110 is used to pass the reaction gas supplied from the supply device 200 into the reaction chamber. The governor assembly 120 is provided between the intake assembly 110 and the supply device 200, or at the exhaust end of the intake assembly 110, and is used to increase the velocity of the reaction gas being passed into the reaction chamber (i.e., the intake velocity of the reaction gas).

[0040] If the speed governor assembly 120 is located between the intake assembly 110 and the air supply device 200, the intake assembly 110 is indirectly connected to the air supply device 200 via the speed governor assembly 120. If the speed governor assembly 120 is located at the exhaust end of the intake assembly 110, the intake assembly 110 can be directly or indirectly connected to the air supply device 200.

[0041] The air supply device 200 includes a gas production device for producing reaction gases or a storage device for storing reaction gases. The reaction chamber includes an exhaust port, and the intake assembly 110 and the exhaust port 301 of the reaction chamber are located on opposite sides of the reaction chamber.

[0042] As shown in Figure 5, the velocity of the reaction gas can be increased by the speed control assembly 120, so that the vector sum of the velocity of the reaction gas and the intake velocity of the reaction gas at any point on the wafer 400 is never zero. When the vector sums of the velocity of the reaction gas and the intake velocity of the reaction gas at points on the wafer 400 that are the same distance from the center O of the circle of the wafer 400 are superimposed, a radial relative velocity profile can be formed as shown in Figure 6. As shown in Figure 6, from the center O of the circle of the wafer 400 to the edge region of the wafer 400, the vector sums of the velocity of the reaction gas and the intake velocity of the reaction gas at different positions are equal, meaning that the reaction gas retention layer on the wafer 400 is uniformly distributed.

[0043] In some technical proposals, the reaction gas is passed through the reaction chamber along a first direction, and a compensating gas is passed through along a second direction of the reaction chamber perpendicular to the first direction. While the use of a compensating gas can improve to some extent the problem of non-uniformity in the thickness of the deposited film layer, it increases the total reaction gas volume and makes it more difficult to maintain the process parameters of the reaction gas. At the same time, even with the use of a compensating gas, it is only possible to compensate for the thickness of the film layer in the edge region of wafer 400, and it is not possible to guarantee uniformity of the film layer thickness across the entire surface.

[0044] In this embodiment, the intake device 100 is connected to the supply device 200, and the intake device 100 includes an intake assembly 110 and a governor assembly 120. The intake assembly 110 is used to pass the reaction gas supplied from the supply device 200 into the reaction chamber, and the governor assembly 120 is provided between the intake assembly 110 and the supply device 200, or at the exhaust end of the intake assembly 110, and is used to increase the velocity of the reaction gas passed into the reaction chamber. By increasing the velocity of the reaction gas passed into the reaction chamber, the point where the vector sum of the velocity of the wafer 400 itself and the intake velocity of the reaction gas is zero is eliminated, the reaction gas retention layer on the wafer 400 is uniformly distributed, and the uniformity of the thickness of the film layer formed by deposition can be further improved.

[0045] Compared to the technical proposal of this embodiment, which involves passing a compensating gas through the reaction chamber, the difficulty of maintaining the process parameters of the reaction gas without changing the total amount of reaction gas is reduced. At the same time, by increasing the rate at which the reaction gas is passed through the reaction chamber, the reaction gas retention layer is uniformly distributed across the entire surface of the wafer 400, improving the uniformity of the thickness of the entire film layer.

[0046] As shown in Figures 4 and 9, the speed control assembly 120 includes a flow straightening cover 121, which includes an intake port and an exhaust port, and the flow area of ​​the intake port 1211 of the flow straightening cover is larger than the flow area of ​​the exhaust port 1212 of the flow straightening cover. The flow area of ​​the reaction gas decreases and the velocity of the reaction gas increases. At the same time, since the air supply flow rate by the air supply device 200 is constant, the flow rate of the reaction gas supplied to the reaction chamber is constant. Preferably, the flow straightening cover 121 may have a conical or square pyramidal structure.

[0047] The rectifier cover 121 may be a cone or a square pyramidal structure, but is not limited thereto. The rectifier cover 121 may have any other structure such that the flow area of ​​the intake port 1211 of the rectifier cover is larger than the flow area of ​​the exhaust port 1212 of the rectifier cover.

[0048] The speed control assembly 120 includes a flow straightening cover 121. The flow area of ​​the intake port 1211 of the flow straightening cover is larger than the flow area of ​​the exhaust port 1212 of the flow straightening cover. This increases the velocity of the reaction gas supplied to the reaction chamber by the flow straightening cover 121, and is advantageous in that it has a simple structure and reduces the manufacturing cost of the intake device 100.

[0049] In some embodiments, the rectifier cover 121 is provided at the exhaust end of the intake assembly 110 and is integrally connected to the intake assembly 110. That is, the intake assembly 110 and the rectifier cover 121 may be integrated or designed as a single component.

[0050] The rectifier cover 121 may be integrally connected to the intake assembly 110, but is not limited thereto. The rectifier cover 121 may, in some cases, be designed to be removable to facilitate maintenance or replacement of rectifier covers 121 of different sizes.

[0051] The rectifier cover 121 is provided at the exhaust end of the intake assembly 110 and is integrally connected to the intake assembly 110, which simplifies the structure of the intake device 100 and is advantageous in reducing the manufacturing cost of the intake device 100.

[0052] In some embodiments, the exhaust end of the intake assembly 110 is provided with a plurality of exhaust ports, and a plurality of rectifier covers 121 are provided in one-to-one correspondence with the plurality of exhaust ports of the intake assembly 110, with the intake port 1211 of the rectifier cover being connected to the exhaust port of the intake assembly 110.

[0053] The intake assembly 110 is provided with multiple exhaust ports at its exhaust end, which draw air into the reactor and improve the uniformity of the intake air. Each exhaust port of the intake assembly 110 is provided with a corresponding rectifier cover 121, which not only improves the intake air velocity but also allows for adjustment of the atmospheric distribution of the reaction gas by designing different sizes of rectifier covers 121, thereby improving the uniformity of the intake air.

[0054] In some embodiments, as shown in Figures 7 and 9, the governor assembly 120 includes a paddle 122, which is located between the air supply device 200 and the intake assembly 110. The rotation of the paddle 122 does work on the reaction gas, increasing its velocity. At the same time, since the air supply flow rate by the air supply device 200 is constant, the flow rate of the reaction gas supplied to the reaction chamber is constant.

[0055] A paddle 122 is provided between the air supply device 200 and the intake assembly 110. By controlling the rotation speed of the paddle 122, the velocity of the reaction gas can be controlled. This allows for a wider range of velocity increase compared to increasing the velocity of the reaction gas with the rectifier cover 121, and makes it easy to adjust the velocity of the reaction gas without significantly increasing the manufacturing cost of the intake device 100.

[0056] In some embodiments, as shown in Figures 8 and 9, the speed governor assembly 120 includes a pressure control valve 123, which is located between the air supply device 200 and the intake assembly 110. By adjusting the flow area of ​​the reaction gas in the pressure control valve 123, the air pressure at the tip of the intake assembly 110 can be adjusted, and consequently, the velocity of the reaction gas can be adjusted.

[0057] A pressure control valve 123 is provided between the air supply device 200 and the intake assembly 110. By adjusting the air pressure at the tip of the intake assembly 110, the velocity of the reaction gas is adjusted. This allows for an increase in the velocity of the reaction gas over a wider range than increasing the velocity of the reaction gas with the rectifier cover 121, and makes it easy to adjust the velocity of the reaction gas without significantly increasing the manufacturing cost of the intake device 100.

[0058] In some embodiments, a pressure control valve 123 is provided between the air supply device 200 and the intake assembly 110. At the same time, the speed governor assembly 120 includes a pressure sensor 124, which is located in the duct between the pressure control valve 123 and the air supply device 200, or in the duct between the pressure control valve 123 and the intake assembly 110.

[0059] A pressure sensor 124 is provided between the intake assembly 110 and the air supply device 200. The pressure sensor 124 can monitor the air pressure at the tip of the intake assembly 110, and the pressure control valve 123 can adjust the air pressure at the tip of the intake assembly 110 based on the air pressure measured by the pressure sensor 124, thereby more accurately adjusting the velocity of the reaction gas.

[0060] It should be understood that the pressure control valve 123 can adjust the air pressure at the tip of the intake assembly 110 based on the air pressure measured by the pressure sensor 124, but is not limited to this, and in some cases the pressure control valve 123 can adjust the velocity of the reaction gas based on process parameters such as the intake air flow rate.

[0061] In some embodiments, as shown in Figure 9, the speed control assembly 120 includes at least two of the following: a flow straightening cover 121, a paddle 122, and a pressure control valve 123. Here, the flow straightening cover 121 includes an intake port and an exhaust port, the flow area of ​​the intake port 1211 of the flow straightening cover is larger than the flow area of ​​the exhaust port 1212 of the flow straightening cover, the flow straightening cover 121 is provided at the exhaust end of the intake assembly 110 and connected to the exhaust port of the intake assembly 110. Both the paddle 122 and the pressure control valve 123 are provided between the air supply device 200 and the intake assembly 110.

[0062] The reaction gas velocity can be increased by any of the rectifier cover 121, paddle 122, and pressure control valve 123. The speed control assembly 120 includes at least two of the rectifier cover 121, paddle 122, and pressure control valve 123. In other words, the speed control assembly 120 is designed to be redundant. By designing it in this way, if any of the speed control structures of the rectifier cover 121, paddle 122, and pressure control valve 123 fail or fail to control the speed to the set value, the other speed control structures can replace the failed speed control structure or compensate for the failure to control the speed to the set value, thereby increasing the reliability of the intake device 100.

[0063] In some embodiments, the speed governor assembly 120 includes at least a paddle 122 and a pressure control valve 123, and the air supply device 200, pressure control valve 123, paddle 122, and intake assembly 110 are connected in sequence. That is, when the speed governor assembly 120 includes a paddle 122 and a pressure control valve 123, the pressure control valve 123 may be located at the front end and the paddle 122 may be located at the rear end.

[0064] If the speed control assembly 120 includes a paddle 122 and a pressure control valve 123, the pressure control valve 123 is located at the tip and the paddle 122 is located at the rear end. By designing it in this way, the pressure control valve 123 does not affect the working efficiency of the paddle 122.

[0065] Furthermore, if the speed control assembly 120 includes a paddle 122 and a pressure control valve 123, the pressure control valve 123 may be located at the front end and the paddle 122 may be located at the rear end, but it is not limited to this, and in some cases the pressure control valve 123 may be located at the rear end and the paddle 122 may be located at the front end.

[0066] As shown in Figure 9, the intake device 100 further includes a gas flow controller 130, which is located between the supply device 200 and the speed control assembly 120.

[0067] A gas flow controller 130 is provided between the air supply device 200 and the speed governor assembly 120. The gas flow controller 130 can adjust the intake air flow rate of the air supply device 100, thereby ensuring that the flow rate of the reaction gas supplied to the reaction chamber remains constant when the speed governor assembly 120 increases the velocity of the reaction gas. Furthermore, adjusting the intake air flow rate of the air supply device 100 using the gas flow controller 130 is a simpler control method than adjusting the intake air flow rate using the air supply device 200.

[0068] The intake device 100 may include a gas flow controller 130, but is not limited to this. In some cases, the gas flow controller 130 may be integrated with the supply device 200, or the gas flow controller 130 may be omitted, and the intake flow rate may be controlled by the supply device 200.

[0069] The present invention further provides a thin film deposition apparatus, which includes the intake device 100 disclosed above. The thin film deposition apparatus further includes necessary components such as an air supply device 200 and a reaction chamber, the intake device 100 connecting the air supply device 200 to the reaction chamber and supplying the reaction chamber with reaction gas produced or stored by the air supply device 200. The thin film deposition apparatus may include a chemical vapor deposition apparatus and a physical vapor deposition apparatus, and the chemical vapor deposition apparatus includes an epitaxial deposition apparatus.

[0070] In this embodiment, the thin film deposition apparatus includes an intake device 100, which includes an intake assembly 110 and a governor assembly 120. The intake assembly 110 is used to vent the reaction gas supplied from the supply device 200 into the reaction chamber, and the governor assembly 120 is provided between the intake assembly 110 and the supply device 200, or at the exhaust end of the intake assembly 110, and is used to increase the velocity of the reaction gas vented into the reaction chamber. By increasing the velocity of the reaction gas vented into the reaction chamber, points where the vector sum of its own velocity on the wafer 400 and the intake velocity of the reaction gas is zero can be eliminated, the reaction gas retention layer on the wafer 400 can be uniformly distributed, and the uniformity of the thickness of the film layer formed by deposition can be improved.

[0071] As shown in Figures 1 and 10, the present invention further provides a thin film deposition method, which includes the following steps.

[0072] In S100: A thin film deposition apparatus is provided, which includes a sequentially connected air supply device 200, an air intake device 100, and a reaction chamber, on which a wafer 400 is placed on a susceptor in the reaction chamber, a reaction gas is supplied to the reaction chamber by the air intake device 100, and the wafer 400 is driven to rotate by the susceptor.

[0073] The intake device 100 includes an intake assembly 110, and the intake assembly 110 and the exhaust port 301 of the reaction chamber are located on opposite sides of the reaction chamber.

[0074] In S200: The base intake velocity of the intake assembly 110 of the air supply device 200 is obtained. The base intake velocity has a positive correlation with the flow rate of the reaction gas supplied from the air supply device 200, and the base intake velocity has a negative correlation with the flow area of ​​the intake assembly 110.

[0075] Under the condition that the diameter of the intake assembly 110 and the duct connecting the intake assembly 110 to the air supply device 200 is constant, the base intake velocity is determined by the flow rate of the reaction gas supplied from the air supply device 200.

[0076] In S300: The rotational speed of wafer 400 is obtained, and the outer edge velocity of wafer 400 is calculated based on the rotational speed of wafer 400 and the radius of wafer 400.

[0077] In S400: The base intake velocity is compared with the peripheral linear velocity. If the base intake velocity is smaller than the peripheral linear velocity, the intake velocity of the reaction gas is increased.

[0078] By increasing the velocity of the reaction gas supplied to the reaction chamber, the point where the vector sum of the wafer 400's velocity and the reaction gas intake velocity is zero can be moved outwards, or the point where the vector sum of the wafer 400's velocity and the reaction gas intake velocity is zero can be eliminated, thereby uniformly distributing the reaction gas retention layer on the wafer 400 and further improving the uniformity of the thickness of the film layer formed by deposition.

[0079] In some embodiments, the base intake velocity of the intake assembly 110 is calculated based on the air supply flow rate of the air supply device 200.

[0080] The base intake velocity of the intake assembly 110 is calculated based on the air supply flow rate of the air supply device 200, but is not limited to this. In some cases, the base intake velocity of the intake assembly 110 may be measured using a sensor.

[0081] By calculating the base intake velocity of the intake assembly 110 based on the air supply flow rate of the air supply device 200, and eliminating the need for a sensor to measure the gas velocity, it is advantageous in reducing the manufacturing cost of semiconductor devices.

[0082] In some embodiments, the intake velocity of the reaction gas is greater than or equal to the peripheral linear velocity.

[0083] When the intake velocity of the reaction gas is equal to the linear velocity at the outer edge of wafer 400, the point where the vector sum of the wafer's own velocity and the intake velocity of the reaction gas is zero is eliminated. Under these conditions, the uniformity of the thickness of the film layer formed by deposition can be improved, and the efficiency of film layer deposition can be guaranteed. To eliminate errors, the intake velocity of the reaction gas may be slightly greater than the linear velocity at the outer edge of wafer 400.

[0084] In some embodiments, the intake device 100 includes a paddle 122, which is located between the supply device 200 and the intake assembly 110, and a method for increasing the intake velocity of the reaction gas includes controlling the ON state of the paddle 122. Alternatively, the intake device 100 includes a pressure control valve 123, which is located between the supply device 200 and the intake assembly 110, and a method for increasing the intake velocity of the reaction gas includes reducing the flow area of ​​the reaction gas in the pressure control valve 123.

[0085] By controlling the ON state of paddle 122, the rotation of paddle 122 does work on the reaction gas, thereby increasing the velocity of the reaction gas. By reducing the flow area of ​​the reaction gas in the pressure control valve 123, the air pressure at the tip of the intake assembly 110 can be increased, thereby increasing the velocity of the reaction gas. By increasing the velocity of the reaction gas supplied to the reaction chamber, points where the vector sum of its own velocity on the wafer 400 and the intake velocity of the reaction gas is zero can be eliminated, resulting in a uniform distribution of the reaction gas retention layer on the wafer 400, and further improving the uniformity of the thickness of the film layer formed by deposition.

[0086] In some embodiments, the intake device 100 includes a paddle 122 and a pressure control valve 123, both of which are located between the supply device 200 and the intake assembly 110, and a method for increasing the intake velocity of the reaction gas is, This includes reducing the flow area of ​​the reaction gas in the pressure control valve 123, and controlling the ON state of the paddle 122 in the event of a malfunction of the pressure control valve 123 or when the flow area of ​​the reaction gas in the pressure control valve 123 is reduced to its limit position.

[0087] By prioritizing the use of the pressure control valve 123 and increasing the intake velocity of the reaction gas, the boundary pressure can be kept constant, making it easier and more accurate to control the intake velocity of the reaction gas.

[0088] Furthermore, by prioritizing the use of the pressure control valve 123 to increase the intake velocity of the reaction gas, and using the paddle 122 as a backup for the pressure control valve 123, the paddle 122 can be turned on again if the pressure control valve 123 fails or reaches its control limit. However, this is not the only option, and in some cases, the turning on of the paddle 122 can be controlled, and the flow area of ​​the reaction gas in the pressure control valve 123 can be reduced.

[0089] In some embodiments, a method for increasing the intake velocity of the reaction gas is, A rectifier cover 121 is attached to the intake or exhaust end of the intake assembly 110, and the rectifier cover 121 includes an intake port and an exhaust port, and the flow area of ​​the intake port 1211 of the rectifier cover is larger than the flow area of ​​the exhaust port 1212 of the rectifier cover.

[0090] By reducing the flow area of ​​the reaction gas, the intake velocity of the reaction gas can be increased. By increasing the velocity of the reaction gas supplied to the reaction chamber, points where the vector sum of the wafer 400's velocity and the intake velocity of the reaction gas is zero can be eliminated, resulting in a uniform distribution of the reaction gas retention layer on the wafer 400, and further improving the uniformity of the thickness of the film layer formed by deposition.

[0091] In some embodiments, a method for increasing the intake velocity of the reaction gas is, This includes reducing the pressure at the exhaust port 301 of the reaction chamber.

[0092] The intake assembly 110 and the exhaust port 301 of the reaction chamber are located on opposite sides of the reaction chamber. The pressure in the intake assembly 110 is greater than the pressure in the exhaust port 301 of the reaction chamber, and the reaction gas flows from the intake assembly 110 towards the exhaust port 301 of the reaction chamber. By appropriately reducing the pressure in the exhaust port 301 of the reaction chamber, the pressure difference between the intake assembly 110 and the exhaust port 301 of the reaction chamber can be increased, which has the effect of increasing the intake velocity of the reaction gas. Furthermore, by reducing the pressure in the exhaust port 301 of the reaction chamber, the supply air flow rate of the supply air device 200 can be increased more appropriately.

[0093] Furthermore, a correspondence is formed between the increase in the air supply flow rate of the air supply device 200 and the decrease in pressure at the exhaust port 301 of the reaction chamber. By calculating the correspondence between the increase in the air supply flow rate of the air supply device 200 and the decrease in pressure at the exhaust port 301 of the reaction chamber through practical testing or simulation, and by synchronously adjusting the air supply flow rate of the air supply device 200 and the pressure at the exhaust port 301 of the reaction chamber based on this correspondence, it is possible to prevent changes in the thickness of the deposited film layer due to a decrease in pressure at the exhaust port 301 of the reaction chamber.

[0094] In some embodiments, a method for increasing the intake velocity of the reaction gas is, This includes increasing the temperature of the reaction gas in the intake device 100.

[0095] By increasing the temperature of the reaction gas in the intake device 100, the pressure of the reaction gas in the intake device 100 can be increased. The intake assembly 110 and the exhaust port 301 of the reaction chamber are located on opposite sides of the reaction chamber, and the pressure in the intake assembly 110 is greater than the pressure at the exhaust port 301 of the reaction chamber, so the reaction gas flows from the intake assembly 110 towards the exhaust port 301 of the reaction chamber. By increasing the pressure of the reaction gas in the intake device 100, the pressure difference between the intake assembly 110 and the exhaust port 301 of the reaction chamber can be increased, which has the effect of increasing the intake velocity of the reaction gas.

[0096] The terms "first," "second," etc., are merely descriptive and should not be understood as indicating or implying relative importance, or implicitly indicating the number of technical features being referred to. Therefore, features such as "first," "second," etc., may explicitly or implicitly include one or more such features. In the description of this application, "plural" means two or more unless otherwise specified.

[0097] In this application, unless otherwise specified, terms such as "assembly" and "connection" should be understood in a broad sense. For example, they may be fixed connections, removable connections, or integral connections, mechanical connections, electrical connections, direct connections, indirect connections via an intermediate medium, or internal communication between two elements or interaction relationships between two elements. Those skilled in the art will be able to understand the specific meaning of the above terms in this application based on the specific circumstances.

[0098] In this specification, any reference to terms such as "several examples" or "exemplary" means that the specific features, structures, materials, or characteristics described in such examples or exemplary are included in at least one example of this application. In this specification, schematic representations of the above terms do not necessarily refer to the same example or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in an appropriate manner in any one or more examples or examples. In addition, a person skilled in the art can combine different examples or examples and features of different examples or examples described herein, provided they are not contradictory.

[0099] Although the embodiments of the present application have been described above, these embodiments are illustrative and should not be understood as limitations on the present application. A person skilled in the art may make changes, modifications, substitutions, and alterations to the embodiments within the scope of the present application, but any changes or modifications made in the claims and specification of the present application shall all fall within the scope of the claims of the present application. [Explanation of Symbols]

[0100] 100, intake device, 110, intake assembly, 120, speed control assembly, 121, flow straightening cover, 1211, intake port of flow straightening cover, 1212, exhaust port of flow straightening cover, 122, paddle, 123, pressure control valve, 124, pressure sensor, 130, gas flow controller, 200, supply device, 301, exhaust port of reaction chamber, 400, wafer.

Claims

1. An intake device connected to an air supply device, An intake assembly for supplying the reaction gas from the aforementioned air supply device to the reaction chamber, The system includes a speed control assembly provided between the intake assembly and the air supply device, or at the exhaust end of the intake assembly, for increasing the velocity of the reaction gas supplied to the reaction chamber, The speed control assembly includes a paddle, which is located between the air supply device and the intake assembly. An intake device characterized by the following features.

2. The speed control assembly includes a flow straightening cover, the flow straightening cover includes an intake port and an exhaust port, and the flow area of ​​the intake port of the flow straightening cover is larger than the flow area of ​​the exhaust port of the flow straightening cover. The intake device according to feature 1.

3. The rectifier cover is provided at the exhaust end of the intake assembly and is integrally connected to the intake assembly. The intake device according to feature 2.

4. The intake assembly has multiple exhaust ports at its exhaust end, and the multiple rectifier covers are provided in one-to-one correspondence with the multiple exhaust ports of the intake assembly, and the intake ports of the rectifier covers are connected to the exhaust ports of the intake assembly. The intake device according to feature 2.

5. The speed control assembly includes a pressure control valve, the pressure control valve is provided between the air supply device and the intake assembly. The intake device according to feature 1.

6. The speed control assembly includes a pressure sensor, the pressure sensor is provided in a duct between the pressure control valve and the air supply device, or in a duct between the pressure control valve and the intake assembly. The intake device according to feature 5.

7. The speed control assembly includes at least one of a rectifier cover and a pressure control valve, The rectifier cover includes an intake port and an exhaust port, the airflow area of ​​the intake port of the rectifier cover is larger than the airflow area of ​​the exhaust port of the rectifier cover, the rectifier cover is provided at the exhaust end of the intake assembly and connected to the exhaust port of the intake assembly. The pressure control valve is provided between the air supply device and the intake assembly. The intake device according to feature 1.

8. The speed control assembly includes at least the paddle and the pressure control valve, wherein the air supply device, the pressure control valve, the paddle and the intake assembly are in sequence and continuous. The intake device according to feature 7.

9. The intake device further includes a gas flow controller, the gas flow controller is provided between the intake device and the speed control assembly. The intake device according to any one of claims 1 to 8.

10. Includes an intake device according to any one of claims 1 to 8, The reaction chamber is connected to the intake device. A thin film deposition apparatus characterized by the following features.

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