Indication device

Abstract

An organic EL display device (1) comprises a TFT layer (20) and a light-emitting element layer (60) provided on a substrate layer (10) in the stated order. A camera (3) is disposed on the rear-surface side of the substrate layer. From within a display area, a second display area (DA2) inwards of a first display area (DA1) transmits external light received by the camera. The second display area (DA2) is provided with a connection line (40r) that electrically connects a TFT (50) and an organic EL element (70). The connection line includes a transparent wiring layer (TL1). A pixel electrode of the second display area has a first area (PB1) provided so as to overlap the transparent wiring layer, and a second area (PB2) formed on the same layer as the transparent wiring layer.

Description

Technical Field

[0001] The present disclosure relates to a display device.

Background Art

[0002] In recent years, organic electroluminescence (hereinafter referred to as EL) devices have been put into practical use in organic EL display devices. When an organic EL display device is used as a display for information terminals such as smartphones and tablet terminals, or when it is used as a display for two-way communication such as video phones and video conferences, it is combined with a camera that captures the front side where an image is displayed, so-called an in-camera.

[0003] In an organic EL display device with an in-camera, it has been proposed to arrange the camera at a position that overlaps the display area in a plan view on the back side of the device. An example of such an organic EL display device is disclosed in Patent Document 1.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In an organic EL display device with an in-camera as described above, the portion of the display area that overlaps with the camera in a plan view is designated as a transparent region that transmits ambient light. Connection lines connecting the organic EL element and the pixel circuit are provided in this transparent region. It is desirable that these connection lines be made of a light-transmitting transparent wiring layer to increase the transmittance of light used by the camera in the display area. When the organic EL element is of the top-emission type, the pixel electrodes constituting the organic EL element are light-reflecting. Therefore, the pixel electrodes and the transparent wiring layer must be formed separately. In such cases, the pixel electrodes are provided superimposed on the transparent wiring layer so that they are contained within the transparent wiring layer in a plan view.

[0006] However, adopting such a configuration requires an alignment margin for each light-emitting element that includes the margins between the transparent conductive layer and the pixel electrode patterns, and the margins between the pixel electrode and the components provided on the upper layer. Therefore, a relatively long distance must be maintained between adjacent pixel electrodes. As a result, the resolution of the displayed image in the display device is hindered. This problem also occurs when, in the general part of the display area outside the transparent area, a transparent conductive layer is formed on the same layer as the transparent wiring layer using the same material, and the pixel electrodes are provided on top of the transparent conductive layer.

[0007] The purpose of this disclosure is to increase the transmittance of light used by the electronic components in the display area and to improve the resolution of the displayed image in a display device in which light-using electronic components are arranged on the back side of the display area. [Means for solving the problem]

[0008] This disclosure relates to a display device. A display device according to a first aspect of this disclosure comprises a substrate, a thin-film transistor layer provided on the substrate, and a light-emitting element layer provided on the thin-film transistor layer. A plurality of thin-film transistors are provided on the thin-film transistor layer, and a plurality of light-emitting elements are provided on the light-emitting element layer, corresponding to a plurality of subpixels forming a display area. An electronic component that utilizes light is arranged on the back side of the substrate at a position overlapping the display area in a plan view. The display area has a first display area and a second display area provided inside the first display area and that transmits light used by the electronic component. The second display area is provided with connecting lines that electrically connect the thin-film transistors and the light-emitting elements. The connecting lines include a transparent wiring layer that is light-transmitting. The pixel electrodes of the second display area have a first area provided on top of the transparent wiring layer and a second area formed on the same layer as the transparent wiring layer.

[0009] Furthermore, a display device according to a second embodiment of the present disclosure comprises a substrate, a thin-film transistor layer provided on the substrate, and a light-emitting element layer provided on the thin-film transistor layer. A plurality of thin-film transistors are provided on the thin-film transistor layer, and a plurality of light-emitting elements are provided on the light-emitting element layer, corresponding to a plurality of subpixels forming a display area. An electronic component that utilizes light is arranged on the back side of the substrate at a position overlapping the display area in a plan view. The display area has a first display area and a second display area provided inside the first display area and that transmits light used by the electronic component. The second display area is provided with connecting lines that electrically connect the thin-film transistors and the light-emitting elements. The connecting lines include a transparent wiring layer that is light-transmitting. The pixel electrodes of the first display area have a first area provided on top of a transparent conductive layer formed in the same layer as the transparent wiring layer using the same material, and a second area formed on the same layer as the transparent conductive layer. [Effects of the Invention]

[0010] The display device according to this disclosure can increase the transmittance of light used by electronic components in the display area and increase the resolution of the displayed image. [Brief explanation of the drawing]

[0011] [Figure 1] Figure 1 is a plan view illustrating the schematic configuration of the organic EL display device of Embodiment 1. [Figure 2] Figure 2 is a cross-sectional view of an organic EL display device along line II-II in Figure 1. [Figure 3] Figure 3 is a plan view illustrating pixels and various wiring in the first display area of ​​an organic EL display device. [Figure 4] Figure 4 is a cross-sectional view of the first display area of ​​the organic EL display device along line IV-IV in Figure 3. [Figure 5] Figure 5 is an equivalent circuit diagram illustrating a pixel circuit. [Figure 6] Figure 6 is a plan view illustrating the schematic configuration of the second display area and its surroundings in an organic EL display device. [Figure 7] Figure 7 is a plan view illustrating the main components of the organic EL display device enclosed in area VII of Figure 6. [Figure 8] Figure 8 is a cross-sectional view of the main part of the organic EL display device along line VIII-VIII in Figure 7. [Figure 9] Figure 9 is a cross-sectional view of the main part of the organic EL display device along the IX-IX line in Figure 7. [Figure 10] Figure 10 is a cross-sectional view showing part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of Figure 10 is a cross-sectional view of the part corresponding to Figure 4, and the left side of Figure 10 is a cross-sectional view of the part corresponding to Figure 8. [Figure 11] Figure 11 is a cross-sectional view showing part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of Figure 11 is a cross-sectional view of the part corresponding to Figure 4, and the left side of Figure 11 is a cross-sectional view of the part corresponding to Figure 8. [Figure 12] Figure 12 is a cross-sectional view showing part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of Figure 12 is a cross-sectional view of the part corresponding to Figure 4, and the left side of Figure 12 is a cross-sectional view of the part corresponding to Figure 8. [Figure 13]FIG. 13 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of FIG. 13 is a cross-sectional view of a part corresponding to FIG. 4, and the left side of FIG. 13 is a cross-sectional view of a part corresponding to FIG. 8. [Figure 14] FIG. 14 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of FIG. 14 is a cross-sectional view of a part corresponding to FIG. 4, and the left side of FIG. 14 is a cross-sectional view of a part corresponding to FIG. 8. [Figure 15] FIG. 15 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of FIG. 15 is a cross-sectional view of a part corresponding to FIG. 4, and the left side of FIG. 15 is a cross-sectional view of a part corresponding to FIG. 8. [Figure 16] FIG. 16 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of FIG. 16 is a cross-sectional view of a part corresponding to FIG. 4, and the left side of FIG. 16 is a cross-sectional view of a part corresponding to FIG. 8. [Figure 17] FIG. 17 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of FIG. 17 is a cross-sectional view of a part corresponding to FIG. 4, and the left side of FIG.  17 is a cross-sectional view of a part corresponding to FIG. 8. [Figure 18] FIG. 18 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of FIG. 18 is a cross-sectional view of a part corresponding to FIG. 4, and the left side of FIG. 18 is a cross-sectional view of a part corresponding to FIG. 8. [Figure 19] FIG. 19 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of FIG. 19 is a cross-sectional view of a part corresponding to FIG. 4, and the left side of FIG. 19 is a cross-sectional view of a part corresponding to FIG. 8. [Figure 20] FIG. 20 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 1. The right side of FIG. 20 is a cross-sectional view of a part corresponding to FIG. 4, and the left side of FIG. 20 is a cross-sectional view of a part corresponding to FIG. 8. [Figure 21] FIG. 21 is a cross-sectional view corresponding to FIG. 4 of the first display area of the organic EL display device of Embodiment 2. [Figure 22]FIG. 22 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 2. The right side of FIG. 22 is a cross-sectional view of a portion corresponding to FIG. 4, and the left side of FIG. 22 is a cross-sectional view of a portion corresponding to FIG. 8. [Figure 23] FIG. 23 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 2. The right side of FIG. 23 is a cross-sectional view of a portion corresponding to FIG. 4, and the left side of FIG. 23 is a cross-sectional view of a portion corresponding to FIG. 8. [Figure 24] FIG. 24 is a cross-sectional view corresponding to FIG. 4 of the first display area of the organic EL display device of Embodiment 3. [Figure 25] FIG. 25 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 3. The right side of FIG. 25 is a cross-sectional view of a portion corresponding to FIG. 4, and the left side of FIG. 25 is a cross-sectional view of a portion corresponding to FIG. 8. [Figure 26] FIG. 26 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Embodiment 3. The right side of FIG. 26 is a cross-sectional view of a portion corresponding to FIG. 4, and the left side of FIG. 26 is a cross-sectional view of a portion corresponding to FIG. 8.

MODE FOR CARRYING OUT THE INVENTION

[0012] Hereinafter, exemplary embodiments will be described in detail based on the drawings. In the following embodiments, an organic EL display device will be described as an example of the display device according to the present disclosure. The drawings are for conceptually explaining the technology of the present disclosure. Therefore, the drawings may exaggerate or simplify dimensions, ratios, or numbers in order to facilitate the technology of the present disclosure.

[0013] In the following embodiments, the "first direction" means the horizontal direction of the screen in the orientation of a predetermined use state of the display device. The "second direction" is a direction orthogonal to the first direction and means the vertical direction of the screen in the orientation of a predetermined use state of the display device. A row of components such as sub-pixels means a horizontal arrangement of a plurality of components forming a single column in the first direction. A column of components such as sub-pixels means a vertical arrangement of a plurality of components forming a single column in the second direction.

[0014] In the following embodiments, the statement that another film, layer, element, or other component is provided or formed on top of a certain film, layer, element, or other component does not mean only that the other component exists directly above the other component, but also includes cases where other films, layers, elements, or other components are interposed between the two components.

[0015] Furthermore, in the following embodiments, any description of a component being connected to another component means an electrically connected connection unless otherwise specified. Such a description means not only a direct connection but also an indirect connection via other components, without departing from the gist of the technology of this disclosure. Such a description further includes cases where one component is integrated with another component, that is, where a part of one component constitutes another component.

[0016] Furthermore, in the following embodiments, a statement that a certain component is on the same layer as another component means that the certain component is formed by the same process as the other component. A statement that a certain component is a lower layer of another component means that the certain component is formed by a process earlier than that of the other component. A statement that a certain component is an upper layer of another component means that the certain component is formed by a process later than that of the other component.

[0017] Furthermore, in the following embodiments, a statement that one component is identical or equivalent to another component does not mean only that one component and another component are completely identical or equivalent, but also includes a state in which one component and another component are substantially identical or substantially equivalent, such as when they vary within the range of manufacturing variations or tolerances.

[0018] Furthermore, in the following embodiments, the designations "first," "second," "third," etc., are used to distinguish between the phrases to which these designations are attached, and do not limit the number or any particular order of such phrases.

[0019] Embodiment 1 The organic EL display device 1 of this embodiment is used in mobile devices such as smartphones and tablet terminals. The organic EL display device 1 may also be used in various other devices such as personal computers (PCs) and television equipment.

[0020] -Configuration of an OLED display device- As shown in Figures 1 and 2, the organic EL display device 1 is combined with a camera 3 to form a display device with an in-camera capable of capturing images of the front side of the screen by the camera 3. The organic EL display device 1 has a display area DA and a bezel area FA.

[0021] The display area DA is the area where the image is displayed. The display area DA constitutes the screen. The display area DA is provided in a rectangular shape, for example. The display area DA may be a roughly rectangular shape such as a shape in which at least one side is arc-shaped, a shape in which at least one corner is arc-shaped, a shape in which at least one side has a notch, or any other arbitrary shape.

[0022] As shown in Figure 3, the display area DA is composed of multiple pixels PX. The multiple pixels PX are arranged in a matrix. Each pixel PX is composed of three subpixels SP. The three subpixels SP are a subpixel SPr that emits red light, a subpixel SPg that emits green light, and a subpixel SPb that emits blue light. These three subpixels SPr, SPg, and SPb are arranged, for example, in a stripe pattern.

[0023] As shown in Figures 1 and 2, the camera 3 is positioned on the back side of the substrate layer 10 constituting the organic EL display device 1, in a location that overlaps with the display area DA in a plan view. The camera 3 is an example of an electronic component that utilizes light. The camera 3 has an image sensor such as a CCD (Charge Coupled Device) or CMOS (Complementary Metal Oxide Semiconductor). The camera 3 is installed inside a housing (not shown) that houses the organic EL display device 1.

[0024] The display area DA has a first display area DA1 and a second display area DA2. The first display area DA1 is the area that occupies most of the display area DA. The second display area DA2 is located inside the first display area DA1. The second display area DA2 is the area that transmits light used by the camera 3. The second display area DA2 is provided in a rectangular shape on one side of the display area DA (the upper side in Figure 1). The second display area DA2 may also be circular, elliptical, or have other shapes.

[0025] The frame area FA is the area that constitutes the non-display portion other than the screen. The frame area FA is provided in the shape of a rectangular frame, for example. The frame area FA may have a frame shape other than a rectangle. The frame area FA includes a terminal portion TP and a folding portion BP. The terminal portion TP is the part for connecting to an external circuit (such as a display control circuit). The terminal portion TP is provided near the outer edge of the part that constitutes one side of the frame area FA, and extends in a first direction X along that side.

[0026] The bent portion BP is provided between the terminal portion TP and the display area DA in the frame area FA. The bent portion BP is the part that is bent around a bending axis extending in the first direction X. The bent portion BP extends horizontally so as to cover the entire frame area FA in the first direction X. Although not shown in the figures, the inorganic insulating film constituting the TFT layer 20 is removed in the bent portion BP, resulting in higher flexibility than other parts.

[0027] The bezel region FA of the organic EL display device 1 is bent at the folding portion BP to form a U-shape, for example, by about 180° (shown by the dashed line in Figure 2). As a result, the terminal portion TP is positioned on the back side of the organic EL display device 1. The terminal portion TP has multiple terminals, although it is not shown in the figure. A wiring board CB, such as an FPC (Flexible Printed Circuit), is connected to the terminal portion TP.

[0028] A drive circuit DC is provided in the bezel region FA of the organic EL display device 1. The drive circuit DC is located in the portion of the bezel region FA that constitutes the side adjacent to the side where the terminal portion TP is provided (each side on the left and right in Figure 1). The drive circuit DC is formed monolithically as part of the TFT layer 20, which will be described later. The drive circuit DC includes a gate driver and an emission driver.

[0029] The bezel area FA of the organic EL display device 1 is provided with a first bezel line 40fa and a second bezel line 40fb. The first bezel line 40fa and the second bezel line 40fb are formed to surround the display area DA and extend to the terminal section TP. A high-level power supply voltage (ELVDD) is supplied to the first bezel line 40fa via the wiring board CB. A low-level power supply voltage (ELVSS) is supplied to the second bezel line 40fb via the wiring board CB.

[0030] The organic EL display device 1 employs an active matrix driving method. In the organic EL display device 1, the light emission of individual subpixels SP is controlled by thin film transistors (hereinafter referred to as TFTs) 50, and images are displayed by the operation of the TFTs 50. As shown in Figure 2, the organic EL display device 1 comprises a substrate layer 10, a TFT layer (thin film transistor layer) 20, a light-emitting element layer 60, and a sealing film 80.

[0031] <Substrate layer> The substrate layer 10 is the base layer of the organic EL display device 1. The substrate layer 10 is an example of a substrate. The substrate layer 10 has both light transmittance (in this example, transmittance of visible light; the same applies hereafter) and flexibility. The substrate layer 10 is formed from an organic resin material such as polyimide resin, polyamide resin, or epoxy resin. A light-transmitting protective film 11 (not shown in Figures 4, 8, 9, 21, and 24, which will be referenced later) is attached to the back surface of the substrate layer 10.

[0032] <TFT layer> The TFT layer 20 is provided on the substrate layer 10. The TFT layer 20 includes the aforementioned drive circuit DC. The TFT layer 20 further includes various wirings 40.

[0033] The various types of wiring 40 include the first frame line 40fa and the second frame line 40fb described above. In addition, the various types of wiring 40 include a plurality of gate lines 40g, a plurality of light emission control lines 40e, a plurality of power lines 40p, and a plurality of source lines 40s, as shown in Figure 3. The gate lines 40g and the light emission control lines 40e are examples of first metal wires. The source lines 40s and the power lines 40p are examples of second metal wires.

[0034] Each of the gate lines 40g is a wiring that transmits a gate signal. The gate lines 40g are arranged in the display area DA with spacing between them in the second direction Y and extend parallel to each other in the first direction X. A gate line 40g is provided for each row of sub-pixels SP. Each gate line 40g is connected to the gate driver of the drive circuit DC.

[0035] Each of the multiple light emission control lines 40e is a wire that transmits an emission signal. The multiple light emission control lines 40e are arranged in the display area DA with spacing between them in the second direction Y and extend parallel to each other in the first direction X. A light emission control line 40e is provided for each row of sub-pixels SP. Each light emission control line 40e is connected to the emission driver of the drive circuit DC.

[0036] Each of the multiple power lines 40p is a wiring to which a predetermined high-level power supply voltage (ELVDD) is applied. The multiple power lines 40p are arranged in the display area DA with spacing between them in the first direction X and extend parallel to each other in the second direction Y. A power line 40p is provided for each row of sub-pixels SP. Each power line 40p is connected to the first frame line 40fa.

[0037] Each of the multiple source lines 40s is a wiring that transmits a source signal. The multiple source lines 40s are arranged in the display area DA with spacing between them in the first direction X and extend parallel to each other in the second direction Y. A source line 40s is provided for each row of sub-pixels SP. Each source line 40s is brought out to the terminal section TP and connected to the display control circuit (source driver) via the wiring board CB.

[0038] As shown in Figures 4, 8, and 9, the TFT layer 20 further includes a plurality of TFTs 50, a plurality of capacitors 51, a first planarization film 54, a second planarization film 56, a third planarization film 58, and a plurality of connecting wires 40r.

[0039] Multiple TFT50s are provided corresponding to multiple sub-pixels SP. Multiple TFT50s are provided for each sub-pixel SP. In this example, the multiple TFT50s provided for each sub-pixel SP are the first TFT50A, the second TFT50B, and the third TFT50C. For example, the first TFT50A, the second TFT50B, and the third TFT50C are all configured as top-gate types. Although not shown, the first TFT50A, the second TFT50B, and the third TFT50C each include a gate electrode, a first terminal electrode, and a second terminal electrode.

[0040] At least one capacitor 51 is provided for each sub-pixel SP. Although not shown, the capacitor 51 comprises a first capacitance electrode and a second capacitance electrode. The first capacitance electrode and the second capacitance electrode overlap each other via an insulating film (not shown) contained in the TFT layer 20. The first capacitance electrode and the second capacitance electrode may each be composed of other electrodes or parts of wiring.

[0041] The first planarization film 54 is provided so as to cover a plurality of TFTs 50 and a plurality of capacitors 51. The second planarization film 56 and the third planarization film 58 are stacked on the first planarization film 54 in this order. The first planarization film 54, the second planarization film 56, and the third planarization film 58 extend over the entire display area DA. The surface of the TFT layer 20 is planarized by the first planarization film 54, the second planarization film 56, and the third planarization film 58.

[0042] The connecting lines 40r are wirings that connect a predetermined TFT 50 (third TFT 50C) to an organic EL element 70, and multiple such lines are provided in each of the first display area DA1 and the second display area DA2. In the first display area DA1, the connecting lines 40r are provided for each sub-pixel SP. In the second display area DA2, the connecting lines 40r are provided for each pixel circuit PC.

[0043] Each of the multiple connection lines 40r has a lower-layer connection line 40ra, an intermediate connection line 40rb, and an upper-layer connection line 40rc. The lower-layer connection line 40ra, the intermediate connection line 40rb, and the upper-layer connection line 40rc are formed on different layers. The intermediate connection line 40rb corresponds to the second connection line. The upper-layer connection line 40rc corresponds to the first connection line.

[0044] Each lower-layer connection line 40ra is provided on the first planarization film 54. The lower-layer connection line 40ra is a wiring that connects a predetermined TFT 50 (third TFT 50C) to an intermediate connection line 40rb, and is located in the lower layer of the second planarization film 56. The lower-layer connection lines 40ra are formed in an island shape for each sub-pixel SP of the first display area DA1 and for each pixel circuit PC of the second display area DA2. Each lower-layer connection line 40ra is connected to the predetermined TFT 50 (third TFT 50C) via a first contact hole Ha formed in the first planarization film 54.

[0045] Each intermediate connection line 40rb is provided on the second planarization film 56. The intermediate connection line 40rb is a wiring that connects the lower layer connection line 40ra and the upper layer connection line 40rc, and by extension, a predetermined TFT 50 (third TFT 50C), and is located in the lower layer of the third planarization film 58. The intermediate connection lines 40rb are formed in an island shape for each sub-pixel SP of the first display area DA1 and for each pixel circuit PC of the second display area DA2. Each intermediate connection line 40rb is connected to the corresponding lower layer connection line via the second contact hole Hb formed in the second planarization film 56. 40ra It connects to the network.

[0046] Each upper layer connection line 40rc is provided on the third planarization film 58. The upper layer connection line 40rc is a wiring that connects the intermediate connection line 40rb to the organic EL element 70 and is located below the pixel electrode 61 that constitutes the organic EL element 70. The upper layer connection lines 40rc are formed in an island shape for each sub-pixel SP in the first display area DA1 and for each pixel circuit PC in the second display area DA2. Each upper layer connection line 40rc is connected to the pixel electrode 61 and also to the corresponding intermediate connection line 40rb via a third contact hole Hc formed in the third planarization film 58.

[0047] The various wirings and electrodes described above, with the exception of the intermediate connecting wire 40rb and the upper connecting wire 40rc, are made of metallic materials such as aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), and copper (Cu), and are composed of single-layer or multilayer films. The intermediate connecting wire 40rb and the upper connecting wire 40rc (transparent wiring layer TL1 and transparent conductive layer TL2) are made of crystallized transparent conductive material and are composed of single-layer or multilayer films.

[0048] In this example, the transparent conductive material forming the intermediate connecting line 40rb and the upper connecting line 40rc (transparent wiring layer TL1, transparent conductive layer TL2) is indium tin oxide (ITO). Such intermediate connecting line 40rb and upper connecting line 40rc (transparent wiring layer TL1, transparent conductive layer TL2) are light-transmitting and have a low degree of absorption in the visible light wavelength range. The lower connecting line 40ra is preferably made of a metallic material (for example, a metallic material containing titanium (Ti)) that is resistant to the etching solution used for patterning the intermediate connecting line 40rb, that is, not corroded or is difficult to corrode by the etching solution.

[0049] The first planarization film 54, the second planarization film 56, and the third planarization film 58 are each made of, for example, an organic resin material such as polyimide resin or acrylic resin, or a polysiloxane-based SOG (Spin On Glass) material. At least two of the planarization films among the first planarization film 54, the second planarization film 56, and the third planarization film 58 may be made of the same material. The first planarization film 54, the second planarization film 56, and the third planarization film 58 may be made of different materials.

[0050] <Light-emitting element layer> The light-emitting layer 60 is provided on the TFT layer 20. As shown in Figure 4, the light-emitting layer 60 includes a plurality of organic EL elements (organic electroluminescent elements) 70 and an edge cover 75. The organic EL element 70 is an example of a light-emitting element. The organic EL element 70 is configured as a top-emission type. In the organic EL element 70, the light emitted from the organic EL layer 62 is extracted from the sealing film 80 side.

[0051] Multiple organic EL elements 70 are provided corresponding to multiple subpixels SP. Each organic EL element 70 constitutes a subpixel SP. The multiple organic EL elements 70 as a whole constitute a display area DA. The light emission of each organic EL element 70 is controlled by the operation of multiple TFTs 50 and capacitors 51. Each organic EL element 70 has a pixel electrode 61, an organic EL layer 62, and a common electrode 63.

[0052] The pixel electrodes 61 are provided on the third planarization film 58 in each subpixel SP. The pixel electrodes 61 are arranged in a matrix corresponding to the subpixel SP. The pixel electrodes 61 are connected to the lower layer connecting line 40ra, the intermediate connecting line 40rb and upper layer It is connected to a predetermined TFT 50 via a connecting line 40rc. The pixel electrode 61 functions as an anode and injects holes into the organic EL layer 62.

[0053] The pixel electrode 61 in this example is composed of a conductive laminate CL. The conductive laminate CL is made up of a first transparent electrode layer 61a, a reflective electrode layer 61b, and a second transparent electrode layer 61c stacked in that order. The first transparent electrode layer 61a, the reflective electrode layer 61b, and the second transparent electrode layer 61c are all made of a conductive material that has the property of being etched by a common etching solution (for example, a PAN-based etching solution).

[0054] The first transparent electrode layer 61a and the second transparent electrode layer 61c are each light-transmitting. In this example, the first transparent electrode layer 61a and the second transparent electrode layer 61c are made of indium tin oxide (ITO). The first transparent electrode layer 61a and the second transparent electrode layer 61c may also be formed from other transparent conductive materials such as indium zinc oxide (IZO) or indium gallium zinc oxide (In-Ga-Zn-O). The reflective electrode layer 61b is light-reflecting. In this example, the reflective electrode layer 61b is made of silver (Ag). The reflective electrode layer 61b may also be formed from other light-reflecting metallic materials such as silver alloy, aluminum (Al), or aluminum alloy.

[0055] Edge Cover 75 is Third planarization film 58 It is provided on top. The edge cover 75 is formed in a grid pattern to partition a plurality of pixel electrodes 61. The edge cover 75 is located on top of the pixel electrodes 61 and covers the outer edge (peripheral portion) of each pixel electrode 61. The edge cover 75 has a plurality of openings 76 that partially expose each pixel electrode 61. The periphery of each opening 76 of the edge cover 75 is surrounded by the outer edge of the pixel electrode 61 corresponding to the opening 76 in a plan view. An alignment margin M1 is provided between the periphery of each opening 76 of the edge cover 75 and the outer edge of the pixel electrode 61 corresponding to the opening 76.

[0056] A portion of the surface of the edge cover 75 protrudes toward the sealing film 80, forming a plurality of photospacers 77. The photospacers 77 are columnar supports and, for example, in the manufacturing of the organic EL display device 1, they play a role in maintaining the distance between the film-forming mask used to form the functional layer (e.g., light-emitting layer) constituting the organic EL layer 62 and the surface to be film-formed. Multiple photospacers 77 are provided in a predetermined arrangement in each of the first display area DA1 and the second display area DA2, and multiple photospacers are also provided in the frame area FA.

[0057] The periphery of each aperture 76 in the edge cover 75 is surrounded by the outer edge of the corresponding pixel electrode 61 in a plan view. Furthermore, the periphery of each aperture 76 in the edge cover 75 may be located inside or outside the corresponding transparent conductive layer TL2 in a plan view. The edge cover 75 is made of, for example, an organic resin material such as polyimide resin or acrylic resin, or a polysiloxane-based SOG material.

[0058] The organic EL layer 62 is provided on individual pixel electrodes 61 within an opening 76 of the edge cover 75. The organic EL layer 62 has a hole injection layer, a hole transport layer, an emissive layer, an electron transport layer, and an electron injection layer. The hole injection layer, hole transport layer, emissive layer, electron transport layer, and electron injection layer are stacked on the pixel electrode 61 in this order and consist of known compounds suitable for each function. The organic EL layer 62 emits light when an electric current is applied between the pixel electrode 61 and the common electrode 63.

[0059] The common electrode 63 is provided continuously across multiple sub-pixels SP throughout the entire display area DA. The common electrode 63 covers the edge cover 75 and each organic EL layer 62, and overlaps with each pixel electrode 61 via the organic EL layer 62. The common electrode 63 extends to the frame area FA and connects to the second frame line 40fb. The common electrode 63 functions as a cathode and injects electrons into the organic EL layer 62. It is preferable to use a conductive material with a small work function for the common electrode 63.

[0060] Examples of materials for the common electrode 63 include conductive oxides such as indium tin oxide (ITO) and indium zinc oxide (IZO). The material for the common electrode 63 may also be a metal such as silver (Ag), aluminum (Al), lithium (Li), magnesium (Mg), calcium (Ca), or ytterbium (Yb). The material for the common electrode 63 may also be a metal compound or alloy. The common electrode 63 may be formed by laminating multiple layers made of conductive material.

[0061] <Sealing film> The encapsulation film 80 is provided on the light-emitting element layer 60. As shown in Figure 4, the encapsulation film 80 covers the multiple organic EL elements 70 and protects each organic EL element 70 (especially the organic EL layer 62) from moisture, oxygen, and other elements. The encapsulation film 80 is provided over the entire display area DA and extends to the bezel area FA. The encapsulation film 80 has, for example, a TFE (Thin Film Encapsulation) structure. The encapsulation film 80 has a first inorganic film 81, an organic film 82, and a second inorganic film 83. The first inorganic film 81, the organic film 82, and the second inorganic film 83 are provided on the light-emitting element layer 60 in this order.

[0062] The first inorganic film 81 and the second inorganic film 83 extend further outward from the frame region FA than the organic film 82, and overlap each other at the peripheral edge of the frame region FA. The organic film 82 is encased by the first inorganic film 81 and the second inorganic film 83. The first inorganic film 81 and the second inorganic film 83 are each made of an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride. The organic film 82 is made of an organic resin material such as acrylic resin, epoxy resin, silicone resin, polyurea resin, parylene resin, polyimide resin, or polyamide resin.

[0063] <Pixel Circuit> Multiple TFTs 50 and capacitors 51 provided in each sub-pixel SP constitute a pixel circuit PC as shown in Figure 5. The pixel circuit PC controls the light emission of the organic EL element 70 based on gate signals, emission signals, source signals, high-level power supply voltages, and low-level power supply voltages supplied by various wirings.

[0064] In the equivalent circuit diagram shown in Figure 5, the first terminal electrode of TFT50 is indicated by the number 1 in a circle, and the second terminal electrode of TFT50 is indicated by the number 2 in a circle. Also, in the equivalent circuit diagram shown in Figure 5, the first capacitance electrode of capacitor 51 is indicated by the number 1 in a square, and the second capacitance electrode of capacitor 51 is indicated by the number 2 in a square.

[0065] The gate electrode of the first TFT50A is connected to the corresponding gate line 40g. The first terminal electrode of the first TFT50A is connected to the corresponding source line 40s. The second terminal electrode of the first TFT50A is connected to the corresponding second TFT50B. The gate electrode of the second TFT50B is connected to the corresponding second terminal electrode of the first TFT50A. The first terminal electrode of the second TFT50B is connected to the corresponding power line 40p. The second terminal electrode of the second TFT50B is connected to the corresponding third TFT50C.

[0066] The gate electrode of the third TFT50C is connected to the corresponding light emission control line 40e. The first terminal electrode of the third TFT50C is connected to the second terminal electrode of the corresponding second TFT50B. The second terminal electrode of the third TFT50C is connected to the corresponding organic EL element 70 (pixel electrode 61). The first capacitance electrode of the capacitor 51 is connected to the power line 40p. The second capacitance electrode of the capacitor 51 is connected to the second terminal electrode of the first TFT50A and the gate electrode of the second TFT50B.

[0067] <Arrangement configuration of organic EL elements and pixel circuits> As shown in Figure 6, in the second display area DA2, the arrangement of the organic EL elements 70 and the pixel circuit PC differs from that of the first display area DA1, and the extension of various wirings is irregular. Figure 6 schematically illustrates the arrangement of the organic EL elements 70 and the pixel circuit PC in the second display area DA2 and the surrounding first display area DA1.

[0068] In the schematic diagram shown in Figure 6, for convenience, the organic EL element 70 is represented by a circular symbol, and the pixel circuit PC is represented by a rectangular symbol. In addition, in the schematic diagram of Figure 6, the organic EL element 70 that emits red light is given a left-sloping hatch, the organic EL element 70 that emits green light is given a dot hatch, and the organic EL element 70 that emits blue light is given a right-sloping hatch.

[0069] In the schematic diagram of Figure 6, for convenience, the gate wire 40g and the light emission control wire 40e are shown as a single representative wire (first metal wire 40X) with a dashed line. The gate wire 40g and the light emission control wire 40e each extend in a shape similar to the first metal wire 40X. Also, in the schematic diagram of Figure 6, for convenience, the source wire 40s and the power supply wire 40p are shown as a single representative wire (second metal wire 40Y) with a dashed line. The source wire 40s and the power supply wire 40p each extend in a shape similar to the second metal wire 40Y.

[0070] In the first display area DA1, the pixel circuits PC are positioned in the area where they overlap with the corresponding organic EL element 70 in a plan view, and in the vicinity thereof. This is shown in Figure 6, where the organic EL element 70 and the pixel circuits PC are superimposed. That is, in the first display area DA1, each pixel circuit PC is positioned where it overlaps with the sub-pixel SP formed by the corresponding organic EL element 70.

[0071] As shown in Figure 4, in the first display area DA1, the lower connecting line 40ra, intermediate connecting line 40rb, and upper connecting line 40rc that constitute each connecting line 40r are located in or around the region that overlaps with the corresponding pixel electrode 61 in a plan view, and are connected to each other in a local area. As a result, each connecting line 40r is drawn out from a predetermined TFT 50 (third TFT 50C) onto the third planarization film 58 directly above or around the TFT 50, and connects the TFT 50 to the pixel electrode 61.

[0072] Each upper connecting line 40rc of the first display area DA1 is composed of a transparent conductive layer TL2. The transparent conductive layer TL2 is a by-product associated with the transparent wiring layer TL1, which will be described later. The transparent conductive layer TL2 is formed in an island-like manner for each sub-pixel SP of the first display area DA1. The transparent conductive layer TL2 is similar in shape to the pixel electrode 61 and has an area slightly smaller than the pixel electrode 61. Each pixel electrode 61 of the first display area DA1 is provided superimposed on the corresponding transparent conductive layer TL2.

[0073] Each pixel electrode 61 covers the entire transparent conductive layer TL2 and extends to the periphery of the transparent conductive layer TL2. Each pixel electrode 61 covers at least a portion of the outer edge of the corresponding transparent conductive layer TL2. In this example, each pixel electrode 61 covers the entire outer edge (peripheral surface) of the corresponding transparent conductive layer TL2. The outer edge of each pixel electrode 61 surrounds the entire outer edge of the corresponding transparent conductive layer TL2 in a plan view.

[0074] Each pixel electrode 61 has a first region PA1 and a second region PA2. The first region PA1 is a region of the pixel electrode 61 that is superimposed on the transparent conductive layer TL2. The second region PA2 is a region of the pixel electrode 61 that is formed on the same layer as the transparent conductive layer TL2. In this example, the second region PA2 of each pixel electrode 61 is formed on the surface of the third planarization film 58 and is frame-shaped, extending around the entire circumference of the first region PA1. The inner circumference of the second region PA2 overlaps the peripheral end surface of the transparent conductive layer TL2.

[0075] As shown in Figure 6, in the second display area DA2, the pixel circuits PC are arranged at spaced-apart locations that do not overlap with the corresponding organic EL elements 70 in a plan view. In the second display area DA2, the area in which the organic EL elements 70 forming each subpixel SP are arranged and the area in which the multiple pixel circuits PC corresponding to each of those organic EL elements 70 are arranged are provided separately from each other.

[0076] Specifically, the second display area DA2 includes a light-emitting element area EA and a circuit layout area CA. The light-emitting element area EA is located in the central part of the second display area DA2. Multiple organic EL elements 70 are arranged in the light-emitting element area EA. The circuit layout area CA is located around the light-emitting element area EA. Multiple pixel circuits PC are provided in the circuit layout area CA. Each of these pixel circuits PC controls the light emission of the organic EL elements 70 arranged in the light-emitting element area EA.

[0077] Multiple sets of organic EL elements 70 are arranged in the light-emitting region EA, with two adjacent organic EL elements 70 forming one set. The two organic EL elements 70 in each set are arranged side by side in the first direction X. The light emitted by these two organic EL elements 70 is the same color. A pixel circuit PC in the circuit arrangement region CA is provided for each set of organic EL elements 70 and controls the light emission of the two organic EL elements 70 in that set in common.

[0078] The connection lines 40r of the second display area DA2 are provided for each set of organic EL elements 70 and pixel circuit PC. Each of these connection lines 40r connects the organic EL elements 70 of each set to the pixel circuit PC, or more precisely, to a predetermined TFT 50 (third TFT 50C). Each of the multiple upper-layer connection lines 40rc in the second display area DA2 is connected to two organic EL elements 70 that make up a corresponding set, and these two organic EL elements 70 are connected to each other. The two organic EL elements 70 that make up each set are connected to a common upper-layer connection line 40rc.

[0079] As shown in Figure 9, each of the multiple intermediate connection lines 40rb in the second display area DA2 is drawn from the light-emitting element area EA to the circuit layout area CA, and in the circuit layout area CA it is connected to a predetermined TFT 50 (third TFT 50C) via the lower layer connection line 40ra. As shown in Figure 7, in the second display area DA2, some of the intermediate connection lines 40rb and upper layer connection lines 40rc that are not connected to each other extend and intersect each other in a plan view. As shown in Figure 8, the third planarization film 58 is interposed at the intersection of these intermediate connection lines 40rb and upper layer connection lines 40rc.

[0080] Each upper connection line 40rc of the second display area DA2 has a pair of electrode terminals 40t and a connecting line 40l. The pair of electrode terminals 40t are provided separately at both ends of the upper connection line 40rc and are connected to the pixel electrodes 61 of different organic EL elements 70. The connecting line 40l connects the pair of electrode terminals 40t. Each electrode terminal is similar in shape to the corresponding pixel electrode 61 and has an area slightly smaller than the pixel electrode 61. The upper connection line 40rc is composed of a transparent wiring layer TL1. That is, each connection line 40r of the second display area DA2 includes a transparent wiring layer TL1 formed on the same layer (third planarization film 58) as the pixel electrode 61.

[0081] Each pixel electrode 61 in the second display area DA2 is provided overlapping the portion of the corresponding transparent wiring layer TL1 that constitutes the electrode terminal portion 40t. The pixel electrode 61 overlaps the portion of the transparent wiring layer TL1 that constitutes the electrode terminal portion 40t and extends to the periphery of that portion. The pixel electrode 61 covers a part of the outer edge of the transparent wiring layer TL1, in this example, the outer edge (peripheral end surface) of the portion that constitutes the electrode terminal portion 40t, over its entire circumference. In a plan view, the outer edge of the pixel electrode 61 surrounds the outer edge of the portion of the transparent wiring layer TL1 that constitutes the electrode terminal portion 40t.

[0082] Each pixel electrode 61 has a first region PB1 and a second region PB2. The first region PB1 is a region of the pixel electrode 61 that is superimposed on the transparent wiring layer TL1. The second region PB2 is a region of the pixel electrode 61 that is formed on the same layer as the transparent wiring layer TL1. In this example, the second region PB2 of each pixel electrode 61 is formed on the surface of the third planarization film 58 and is frame-shaped, extending around the entire circumference of the first region PB1. The inner circumference of the second region PB2 overlaps the peripheral end surface of the transparent wiring layer TL1.

[0083] The transparent wiring layer TL1 and the transparent conductive layer TL2 are formed from the same material in the same layer. As described above, the transparent wiring layer TL1 and the transparent conductive layer TL2 in this example are formed from a crystallized transparent conductive material, in this example indium tin oxide (ITO), and have relatively high light transmittance. Indium tin oxide (ITO) is corroded by a predetermined etching solution before crystallization, but after crystallization it becomes resistant to corrosion by the same etching solution. The "predetermined etching solution" here includes the etching solution used for patterning the transparent wiring layer TL1 and the transparent conductive layer TL2 (ITO etching solution in this example) and the etching solution used for patterning the pixel electrode 61 (first transparent electrode layer 61a, reflective electrode layer 61b, and second transparent electrode layer 61c) (PAN-based etching solution in this example).

[0084] As shown in Figure 6, each first metal wire 40X corresponding to multiple subpixels SP in the second display area DA2 extends outside the group of organic EL elements 70 arranged in the light-emitting region EA. Each of these first metal wires 40X extends through the circuit arrangement region CA, avoiding the light-emitting region EA, and connects to the pixel circuit PC (second terminal electrode of the third TFT 50C) in the circuit arrangement region CA. In addition, each second metal wire 40Y corresponding to multiple subpixels SP in the second display area DA2 extends outside the group of organic EL elements 70 arranged in the light-emitting region EA.

[0085] Thus, in the second display area DA2, the connecting lines 40r (intermediate connecting line 40rb and upper connecting line 40rc), the first metal wire 40X, and the second metal wire 40Y are designed so as not to reduce the light transmittance from the front side to the back side in the light-emitting element area EA.

[0086] -Operation of OLED display devices- In the organic EL display device 1, in each subpixel SP, the corresponding light emission control line 40e is first selected, and an emission signal indicating an inactive state is input to the third TFT 50C via the light emission control line 40e. As a result, the third TFT 50C is turned off, and the organic EL element 70 enters a non-light-emitting state.

[0087] Then, a gate line 40g corresponding to the non-emitting organic EL element 70 is selected, and a gate signal indicating the active state is input to the first TFT 50A via the gate line 40g. This turns on the first TFT 50A. When the first TFT 50A is turned on, a predetermined voltage corresponding to the source signal transmitted via the source line 40s is applied to the second TFT 50B and written to the capacitor 51.

[0088] Subsequently, the corresponding light emission control line 40e is selected, and an emission signal indicating the active state is input to the third TFT 50C. This turns on the third TFT 50C. When the third TFT 50C is turned on, a drive current corresponding to the voltage applied to the gate electrode of the second TFT 50B is supplied to the organic EL element 70 from the power line 40p.

[0089] In this way, in the organic EL display device 1, an image is displayed when the organic EL element 70 (light-emitting layer) emits light at a brightness corresponding to the drive current in each sub-pixel SP. The light emission of the organic EL element 70 is maintained for each sub-pixel SP until the gate signal for the next frame is input, even when the first TFT 50A is turned off, because the voltage applied to the gate electrode of the second TFT 50B is maintained by the capacitor 51.

[0090] Furthermore, in the organic EL display device 1, ambient light is transmitted from the front to the back in the second display area DA2. The ambient light that has passed through the second display area DA2 is incident on the light-receiving part of the camera 3. The camera 3 receives the ambient light that has passed through the second display area DA2 and converts it into an electrical signal with its image sensor. As a result, in the organic EL display device 1, the camera 3 captures an image with the front of the screen as the target (subject side).

[0091] -Manufacturing method for organic EL display devices- To manufacture the organic EL display device 1, first, a substrate layer 10 is formed by applying an organic resin material to the surface of a glass substrate 200 and performing a bake treatment. Next, a TFT layer 20, a light-emitting element layer 60, and a sealing film 80 are formed on the substrate layer 10 in this order using known film deposition methods such as CVD (Chemical Vapor Deposition), sputtering, and vacuum deposition, known coating methods such as spin coating and inkjet, and known patterning techniques such as photolithography.

[0092] Then, the glass substrate 200 is peeled off the substrate layer 10 by irradiating the back surface of the substrate layer 10 with laser light from the glass substrate 200 side. Next, a polarizing plate and a cover panel are attached to the surface of the sealing film 80. A protective film 11 is also attached to the back surface of the substrate layer 10. Furthermore, the display control circuit is mounted by connecting the wiring board CB to the terminal section TP. After that, the organic EL display device 1 is housed in the casing together with the camera 3, and the camera 3 is positioned on the back side of the organic EL display device 1 at a position that overlaps with the second display area DA2 in a plan view.

[0093] In this manner, the organic EL display device 1 can be manufactured.

[0094] In the process of forming the TFT layer 20, after forming multiple TFTs 50 and capacitors 51 on the substrate layer 10 on the surface of the glass substrate 200, an acrylic or polyimide photosensitive resin or a photosensitive SOG material is applied, for example, by a spin coating method or a slit coating method. Subsequently, pre-baking, exposure, development, and post-baking are performed on the coated film. This forms a first planarization film 54 (for example, with a thickness of about 0.5 μm to 3.0 μm) having a first contact hole Ha, as shown in Figure 10.

[0095] Next, a titanium film is deposited on the substrate on which the first planarization film 54 is formed, for example, by sputtering. This forms a first metal film 100 (for example, with a thickness of about 100 nm to 500 nm), as shown in Figure 11. Here, instead of a titanium film, a molybdenum film may be deposited to form the first metal film 100, or a titanium film, an aluminum film, and a titanium film may be deposited in sequence. Subsequently, the first metal film 100 is patterned to form the lower layer connecting line 40ra (see Figure 12). The patterning of the first metal film 100 is performed, for example, by wet etching or dry etching using an etching solution appropriate to the metal material, such as a known titanium etching solution.

[0096] Next, an acrylic or polyimide-based photosensitive resin, or a photosensitive SOG material, is applied to the substrate on which the lower layer connecting line 40ra is formed, for example, by a spin coating method or a slit coating method. Subsequently, the coated film is subjected to pre-baking, exposure, development, and post-baking. This forms a second planarization film 56 (for example, with a thickness of about 0.5 μm to 30 μm) having a second contact hole Hb, as shown in Figure 12.

[0097] Next, an indium tin oxide film is deposited on the substrate on which the second planarization film 56 is formed, for example, by sputtering. This forms a first transparent conductive film 102 (for example, with a thickness of about 50 nm to 150 nm), as shown in Figure 13. Here, an indium zinc oxide film or an indium gallium zinc oxide film may be deposited to form the first transparent conductive film 102. Subsequently, the first transparent conductive film 102 is patterned to form an intermediate connecting line 40rb (see Figure 14). The patterning of the first transparent conductive film 102 is performed by wet etching using an etching solution appropriate to the transparent conductive material, such as a known ITO etching solution.

[0098] Next, an acrylic or polyimide-based photosensitive resin, or a photosensitive SOG material, is applied to the substrate on which the intermediate connecting line 40rb is formed, for example, by a spin coating method or a slit coating method. Subsequently, the coated film is subjected to pre-baking, exposure, development, and post A baking process is performed. This forms a third planarization film 58 (for example, with a thickness of about 0.5 μm to 3.0 μm) having a third contact hole Hc, as shown in Figure 14.

[0099] Next, an indium tin oxide film is deposited on the substrate on which the third planarization film 58 is formed, for example by sputtering. This forms a second transparent conductive film 104 (for example, with a thickness of about 50 μm to 150 μm) as shown in Figure 15. Here, an indium zinc oxide film or an indium gallium zinc oxide film may be deposited to form the second transparent conductive film 104. Subsequently, the second transparent conductive film 104 is patterned to form an upper connecting line 40rc (transparent wiring layer TL1 and transparent conductive layer TL2) as shown in Figure 16. The patterning of the second transparent conductive film 104 is performed by wet etching using an etching solution appropriate to the transparent conductive material, such as a known ITO etching solution.

[0100] Next, the substrate on which the upper connecting line 40rc is formed is subjected to an annealing treatment at a temperature of approximately 200°C to 250°C for approximately 30 to 120 minutes. This annealing treatment crystallizes the lower connecting line 40ra, the intermediate connecting line 40rb, and the upper connecting line 40rc (transparent wiring layer TL1 and transparent conductive layer TL2). This enhances the conductivity and light transmittance of the lower connecting line 40ra, the intermediate connecting line 40rb, and the upper connecting line 40rc (transparent wiring layer TL1 and transparent conductive layer TL2). Furthermore, the crystallization of the transparent wiring layer TL1 and transparent conductive layer TL2 makes them resistant to the PAN-based etching solution used later for patterning the pixel electrodes 61.

[0101] In this way, the TFT layer 20 can be formed.

[0102] In the process of forming the light-emitting element layer 60, an indium tin oxide film 106a (for example, with a thickness of about 5 nm to 100 nm), a silver film 106b (for example, with a thickness of about 50 nm to 200 nm), and an indium tin oxide film 106c (for example, with a thickness of about 5 nm to 100 nm) are deposited in this order on a substrate on which the upper layer connecting line 40rc is formed, for example by sputtering. This forms a second metal film 106 as shown in Figure 17. Here, instead of the indium tin oxide films 106a and 106c, an indium zinc oxide film or an indium gallium zinc oxide film may be deposited to form the second metal film 106. Also, instead of the silver film 106b, a silver alloy film, an aluminum film, or an aluminum alloy film may be deposited. Subsequently, the second metal film 106 is patterned to form the pixel electrode 61 as shown in Figure 18.

[0103] The patterning of the second metal film 106 is performed by wet etching. In this wet etching, a PAN-based etching solution, which is a mixture of phosphoric acid, nitric acid, and acetic acid, is used as the etching solution. At this time, each upper connecting line 40rc (transparent wiring layer TL1) of the second display area DA2 is exposed to the PAN-based etching solution. However, since the upper connecting lines 40rc (transparent wiring layer TL1) are crystallized in advance and have resistance, they are not corroded by the etching solution or are less susceptible to corrosion, and can be left partially exposed from the pixel electrode 61.

[0104] Next, as shown in Figure 19, a polyimide-based photosensitive resin is applied to the substrate on which the pixel electrodes 61 are formed, for example, by a spin coating method or a slit coating method. Subsequently, the coated film 108 is subjected to pre-baking, exposure, development, and post A baking process is performed. This forms an edge cover 75 having a photospacer 77, as shown in Figure 20. Subsequently, an organic EL layer 62 and a common electrode 63 are formed sequentially on the substrate on which the edge cover 75 is formed using a known method.

[0105] In this way, the light-emitting layer 60 can be formed.

[0106] -Features of Embodiment 1- In the organic EL display device 1 of this embodiment 1, the connection line 40r provided in the second display area DA2 includes a light-transmitting transparent wiring layer TL1 (upper connection line 40rc). This increases the transmittance of ambient light received by the camera 3 in the second display area DA2. The pixel electrodes 61 of the second display area DA2 are provided on top of the transparent wiring layer TL1, but cover a portion of the outer edge of the transparent wiring layer TL1. In the portion of the outer edge of the transparent wiring layer TL1 covered by the pixel electrodes 61, the alignment margin for each organic EL element 70 only needs to be considered as the margin M1 between the patterns of the pixel electrodes 61 and the opening 76 of the edge cover 75, eliminating the need to secure a margin between the patterns of the transparent wiring layer TL1 and the pixel electrodes 61. This shortens the distance that needs to be secured between adjacent pixel electrodes 61 in the second display area DA2. As a result, the display image in the organic EL display device 1 can be made higher resolution.

[0107] In this embodiment 1 of the organic EL display device 1, the pixel electrodes 61 of the first display area DA1 are provided superimposed on the transparent conductive layer TL2, but the outer edge of the transparent conductive layer TL2 is covered around its entire circumference. In the portion of the outer edge of the transparent conductive layer TL2 that is covered by the pixel electrodes 61, the alignment margin for each organic EL element 70 only needs to be considered as the margin M1 between the patterns of the pixel electrodes 61 and the opening 76 of the edge cover 75, and it is not necessary to secure a margin between the patterns of the transparent conductive layer TL2 and the pixel electrodes 61. As a result, the distance that needs to be secured between adjacent pixel electrodes 61 in the first display area DA1 can be shortened. This makes it possible to increase the resolution of the displayed image in the organic EL display device 1.

[0108] In the organic EL display device 1 of this embodiment 1, the transparent wiring layer TL1 is formed from a crystallized transparent conductive material. This transparent conductive material has the property that it is corroded by a predetermined etching solution before crystallization, but becomes resistant to corrosion by the etching solution after crystallization. Such a transparent conductive material is suitable as a material for the transparent wiring layer TL1 because, when the predetermined etching solution is used for patterning films or layers located above the transparent wiring layer TL1, the crystallized transparent conductive material is resistant to corrosion even when exposed to the etching solution.

[0109] In this embodiment 1 of the organic EL display device 1, the transparent wiring layer TL1 is made of indium tin oxide (ITO). Indium tin oxide (ITO) exhibits good properties with respect to the etching solution described above, and is therefore suitable for use as a specific material for the transparent wiring layer TL1.

[0110] In this embodiment 1 of the organic EL display device 1, the pixel electrode 61 has a laminated structure consisting of a first transparent electrode layer 61a, a reflective electrode layer 61b, and a second transparent electrode layer 61c. The transparent wiring layer TL1 has properties that make it resistant to corrosion by the PAN-based etching solution used for patterning the first transparent electrode layer 61a, the reflective electrode layer 61b, and the second transparent electrode layer 61c. As a result, the first transparent electrode layer 61a, the reflective electrode layer 61b, and the second transparent electrode layer 61c can be etched all at once while leaving the transparent wiring layer TL1 intact. This reduces the process required to form the pixel electrode 61. This is advantageous in reducing the cost of the organic EL display device 1.

[0111] In the organic EL display device 1 of this embodiment 1, the connection line 40r is configured to include an intermediate connection line 40rb in addition to the upper layer connection line 40ra. The upper layer connection line 40ra and the intermediate connection line 40rb are formed on different layers. This allows the layout of the upper layer connection line 40ra and the intermediate connection line 40rb to be designed to intersect each other in a plan view. Furthermore, the intermediate connection line 40rb also has light transmittance. This is advantageous for improving the transmittance of ambient light received by the camera 3 in the second display area DA2.

[0112] In this embodiment 1 of the organic EL display device 1, a plurality of organic EL elements 70 in the second display area DA2 are arranged in the light-emitting region EA, and a plurality of pixel circuits PC that control the light emission of the organic EL elements 70 in the light-emitting region EA are arranged around the light-emitting region EA. This eliminates the need to provide pixel circuits PC in the light-emitting region EA. As a result, light can be suitably transmitted from the front side to the back side of the display area DA in the light-emitting region EA, and ambient light can be secured for the camera 3 to receive. This is advantageous for the camera 3 to perform its functions.

[0113] In the organic EL display device 1 of this embodiment 1, a pixel circuit PC is provided for each set of organic EL elements 70, which consists of two or more organic EL elements 70 as one set. The light emission of the two or more organic EL elements 70 forming the set is controlled by a common pixel circuit PC. As a result, in the second display area DA2, the number of pixel circuits PC can be reduced relative to the number of organic EL elements 70. This is advantageous for increasing the transmittance of ambient light received by the camera 3 in the second display area DA2.

[0114] Embodiment 2 The organic EL display device 1 of this second embodiment differs from that of the first embodiment in the connection configuration between the pixel electrode 61 and the TFT 50 in the first display area DA1. In this embodiment, the organic EL display device 1 is configured in the same way as in the first embodiment, except for the connection configuration between the pixel electrode 61 and the TFT 50 in the first display area DA1.

[0115] As shown in Figure 21, in the organic EL display device 1 of this embodiment 2, each pixel electrode 61 of the first display area DA1 is connected to an intermediate connection line 40rb via a third contact hole Hc formed in the third planarization film 58. The upper layer connection line 40rc is provided in the second display area DA2, as in the embodiment 1 (see Figures 8 and 9), but not in the first display area DA1. Each pixel electrode 61 of the first display area DA1 is formed entirely on the surface of the third planarization film 58 and is directly connected to the intermediate connection line 40rb.

[0116] To manufacture the organic EL display device 1 of this second embodiment, as shown in Figure 22, when patterning the second transparent conductive film 104 in the process of forming the TFT layer 20, upper layer connecting lines 40rc are formed only in the second display area DA2, and the second transparent conductive film 104 is removed in the first display area DA1. Then, in the process of forming the light-emitting element layer 60, as shown in Figure 23, the second metal film 106 is formed in the same manner as in the first embodiment. Then, in the same manner as in the first embodiment, the second metal film 106 is patterned to form the pixel electrode 61.

[0117] -Features of Embodiment 2- In this embodiment 2 of the organic EL display device 1, the upper layer connection line 40rc is not provided in the first display area DA1. This allows the structure of each subpixel SP in the first display area DA1 to be similar to that of an organic EL display device that does not have a second display area DA2. This is advantageous for increasing the resolution of the displayed image in the organic EL display device 1 with an in-camera.

[0118] Embodiment 3 In this embodiment 3, the organic EL display device 1 differs from embodiment 1 in the connection configuration between the pixel electrode 61 and the TFT 50 in the first display area DA1. In this embodiment, apart from the connection configuration between the pixel electrode 61 and the TFT 50 in the first display area DA1, the organic EL display device 1 is configured in the same way as in embodiment 1.

[0119] As shown in Figure 24, in the organic EL display device 1 of this embodiment 3, each pixel electrode 61 of the first display area DA1 is connected to a lower layer connection line 40ra via a third contact wheel Hc formed on the third planarization film 58. The upper layer connection line 40rc, the second planarization film 56, and the intermediate connection line 40rb are provided in the second display area DA2, as in embodiment 1 (see Figures 8 and 9), but not in the first display area DA1. The thickness of the third planarization film 58 in the first display area DA1 is equivalent to the thickness of the laminated film of the second planarization film 56 and the third planarization film 58 in the second display area DA2.

[0120] To manufacture the organic EL display device 1 of this embodiment 3, as shown in Figure 25, when forming the second planarization film 56 in the process of forming the TFT layer 20, the second planarization film 56 is formed only in the second display area DA2, and the coating film is removed in the first display area DA1. Then, as shown in Figure 26, the third planarization film 58 is formed so that the surface height is approximately the same in the first display area DA1 and the second display area DA2. At this time, if it is necessary to adjust the thickness of the third planarization film 58 in the first display area DA1 and the second display area DA2, a gray tone mask or a half tone mask may be used when exposing the coating film.

[0121] -Features of Embodiment 3- In this embodiment 3 of the organic EL display device 1, the first display area DA1 is not provided with an upper layer connecting line 40rc, nor with a second planarization film 56 and an intermediate connecting line 40rb. This allows the structure of each subpixel in the first display area to be the same as that of an organic EL display device that does not have a second display area DA2. This is advantageous for increasing the resolution of the displayed image in the organic EL display device 1 with an in-camera.

[0122] Other embodiments In the above embodiment 1, each pixel electrode 61 of the first display area DA1 covers the entire transparent conductive layer TL2 and covers the outer edge of the transparent conductive layer TL2 around its entire circumference, but the embodiment is not limited to this. Each pixel electrode 61 of the first display area DA1 may cover only a part of the outer edge of the transparent conductive layer TL2.

[0123] In Embodiment 3 described above, the upper layer connecting line 40rc (transparent conductive layer TL2) is not provided in the first display area DA1, but this is not limited to this. In the organic EL display device 1 of Embodiment 3 described above, the upper layer connecting line 40rc (transparent conductive layer TL2) may also be provided in the first display area DA1, similar to Embodiment 1 described above.

[0124] In the above embodiment 1, the transparent conductive layer TL2 constitutes the upper connecting line 40rc and is included in the TFT layer 20, but it is not limited to this. The transparent conductive layer TL2 may also be considered as part of the pixel electrode 61 (i.e., included in the light-emitting element layer 60).

[0125] In embodiments 1 to 3 described above, each pixel electrode 61 was assumed to be formed by sequentially stacking a first transparent electrode layer 61a, a reflective electrode layer 61b, and a second transparent electrode layer 61c, but the invention is not limited to this. Each pixel electrode 61 may be composed of two or fewer conductive layers, or of four or more conductive layers.

[0126] In the embodiments 1 to 3 described above, the multiple organic EL elements 70 provided in the light-emitting region EA are arranged in pairs to form one set, and each set is connected to the others via an upper-layer connecting line 40rc. However, the invention is not limited to this configuration. The multiple organic EL elements 70 in the light-emitting region EA may be arranged in groups of three or more to form one set, and each set may be connected to the others via an upper-layer connecting line 40rc.

[0127] Furthermore, the multiple organic EL elements 70 provided in the light-emitting region EA do not necessarily have to be in sets of two or more. That is, the multiple organic EL elements 70 in the light-emitting region EA may not be connected to each other and may be controlled individually. In this case, a separate pixel circuit PC is provided for each organic EL element 70 in the circuit arrangement region CA, and each organic EL element 70 is connected to a separate pixel circuit PC via a connecting line 40r.

[0128] In embodiments 1 to 3 described above, the organic EL layer 62 is provided individually for each subpixel SP, but this is not limited to this configuration. The organic EL layer 62 may be provided as a continuous unit in common for multiple subpixels SP. In this case, the organic EL display device 1 may provide a color filter or the like to express the color tone at each subpixel SP.

[0129] In embodiments 1 to 3 described above, each pixel PX is assumed to be composed of three sub-pixels SP, but this is not limited to this configuration. The sub-pixels SP constituting each pixel PX may consist of four or more colors. Furthermore, while the three sub-pixels SP constituting each pixel PX are assumed to be arranged in a stripe pattern, this is not limited to this arrangement. The arrangement of the multiple sub-pixels PS may be in other patterns, such as a pentile pattern.

[0130] In embodiments 1 to 3 described above, the pixel circuit PC consists of three TFTs 50: a first TFT 50A, a second TFT 50B, and a third TFT 50C. However, the pixel circuit PC is not limited to these three TFTs 50; it may consist of two or fewer TFTs 50, or four or more TFTs 50. Furthermore, each TFT 50 may be configured as a bottom-gate type.

[0131] In embodiments 1 to 3 described above, the pixel electrode 61 is the anode and the common electrode 63 is the cathode, but the invention is not limited to this configuration. The organic EL display device 1 may be configured such that the pixel electrode 61 functions as the cathode and the common electrode 63 functions as the anode. In this case, the organic EL layer 62 has an inverted stacked structure.

[0132] In embodiments 1 to 3 described above, the organic EL layer 62 is assumed to have a five-layer structure consisting of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, but it is not limited to this. The organic EL layer 62 may also have a three-layer structure consisting of a hole injection layer / transport layer, a light-emitting layer, and an electron transport layer / injection layer, and any stacked structure can be adopted.

[0133] In embodiments 1 to 3 described above, the substrate of the organic EL display device 1 was assumed to be a substrate layer, but it is not limited to this. As the substrate, any material can be used as long as it has light transmittance, such as a plastic substrate made of polyethylene terephthalate (PET) or a glass substrate.

[0134] In embodiments 1 to 3 described above, a camera 3 was used as an example of an electronic component to be combined with the organic EL display device 1, but the invention is not limited to this. The electronic component may be any other electronic component, such as a fingerprint sensor, a facial recognition sensor, or a brightness sensor, as long as it is positioned on the back side of the organic EL display device 1 in a position overlapping with the second display area DA2 and utilizes light transmitted through the display area DA.

[0135] In embodiments 1 to 3 described above, an organic EL display device 1 was used as an example of a display device according to the present disclosure, but the invention is not limited thereto. The technology of the present disclosure is applicable to a display device equipped with a plurality of light-emitting elements driven by electric current. An example of such a display device is a display device equipped with a QLED (Quantum-dot Light Emitting Diode), which is a light-emitting element using a quantum dot-containing layer. In addition, the technology of the present disclosure is also applicable to liquid crystal display devices and plasma display devices.

[0136] As described above, preferred embodiments have been explained as examples of the technology of this disclosure. However, the technology of this disclosure is not limited thereto and can be applied to embodiments that are modified, replaced, added to, or omitted as appropriate. It will be understood by those skilled in the art that various further modifications are possible to the above embodiments without departing from the spirit of the technology of this disclosure, and that such modifications also fall within the scope of the technology of this disclosure. [Industrial applicability]

[0137] As explained above, this disclosure is useful for display devices. [Explanation of symbols]

[0138] CL conductive laminate DA display area DA1 1st display area DA2 2nd display area EA light-emitting region PC Pixel Circuit PA1,PB1 1st area PA2,PB2 2nd area SP subpixel TL1 transparent wiring layer TL2 transparent conductive layer 1 Organic EL display device (display device) 3. Camera (electronic component) 10 Substrate layer (substrate) 20 TFT layer (thin film transistor layer) 40r connecting wire 40rb Intermediate connection line (second connection line) 40rc Upper layer connection line (1st connection line) 50 TFT (Thin Film Transistor) 60 light-emitting layer 61 Pixel Electrodes 61a First transparent electrode layer 61b Reflective electrode layer 61c Second transparent electrode layer 70 Organic EL elements (light-emitting elements) 75 Edge Cover 76 Aperture

Claims

1. circuit board and A thin-film transistor layer provided on the substrate, The thin film transistor layer comprises a light-emitting layer provided on the thin film transistor layer, Multiple thin-film transistors are provided in the thin-film transistor layer, and multiple light-emitting elements are provided in the light-emitting element layer, each corresponding to a plurality of subpixels forming a display area. A display device in which an electronic component that utilizes light is arranged on the back side of the substrate at a position that overlaps with the display area in a plan view, The display area comprises a first display area and a second display area provided inside the first display area and which transmits light used by the electronic component. The second display area is provided with connecting lines that electrically connect the thin-film transistor and the light-emitting element. The connecting wire includes a transparent wiring layer that is light-transmitting. The pixel electrode constituting the light-emitting element of the first display area has a first region provided on top of a transparent conductive layer formed in the same layer as the transparent wiring layer using the same material, and a second region formed on the same layer as the transparent conductive layer. The pixel electrodes of the first display area cover the entire outer edge of the transparent conductive layer, in a display device.

2. In the display device according to claim 1, The light-emitting layer includes an edge cover provided to cover the outer edge of the pixel electrode, A display device in which the periphery of the opening in the edge cover that partially exposes the pixel electrode is surrounded by the outer edge of the pixel electrode in a plan view.

3. In the display device according to claim 1 or 2, The transparent wiring layer is formed from a crystallized transparent conductive material. A display device comprising a transparent conductive material that is corroded by a predetermined etching solution before crystallization, but becomes less susceptible to corrosion by the etching solution after crystallization.

4. In the display device according to claim 3, The transparent conductive material is indium tin oxide, in a display device.

5. In the display device according to claim 3, The pixel electrode is composed of a conductive laminate in which a first transparent electrode layer having light transmittance, a reflective electrode layer having light reflectivity, and a second transparent electrode layer having light transmittance are sequentially stacked. A display device wherein the first transparent electrode layer, the reflective electrode layer, and the second transparent electrode layer are all formed from a conductive material that has the property of being etched by the etching solution.

6. In the display device according to claim 1 or 2, The connection line comprises a first connection line electrically connected to the pixel electrode and a second connection line electrically connected to the first connection line and the thin-film transistor. The first connecting wire is made up of the transparent wiring layer, The second connecting line is formed in a different layer from the first connecting line and is a light-transmitting display device.

7. In the display device according to claim 1 or 2, The second display area includes a light-emitting area where a plurality of the light-emitting elements are arranged. A display device is provided, wherein a pixel circuit including the thin-film transistor is provided around the light-emitting region, and the pixel circuit controls the light emission of the light-emitting elements arranged in the light-emitting region.

8. In the display device according to claim 7, Multiple sets of the light-emitting elements are arranged in the light-emitting element region, with two or more of the light-emitting elements forming one set. The pixel circuit is provided for each set of light-emitting elements and controls the light emission of two or more of the light-emitting elements forming the set in common, in a display device.

9. In the display device according to claim 1 or 2, The aforementioned electronic components are a camera and a display device.

10. In the display device according to claim 1 or 2, The aforementioned light-emitting element is an organic electroluminescent element, and the device is a display device.

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