Gas cluster auxiliary plasma treatment

Gas cluster-assisted anisotropic plasma processing enhances the etching of high aspect ratio features in semiconductor devices by increasing radical density and controlling ion interaction, addressing the challenges of precision and uniformity in plasma processing.

JP7883694B2Active Publication Date: 2026-07-02TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
TOKYO ELECTRON LTD
Filing Date
2021-08-19
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

Plasma processing technologies face challenges in manufacturing semiconductor devices with extremely high aspect ratios due to limitations in achieving precise, uniform, and repeatable etching of features at molecular and atomic scales, particularly in forming high aspect ratio openings such as contacts, vias, and trench capacitors.

Method used

The use of gas cluster-assisted anisotropic plasma processing (CLAAPP) techniques, which involve generating a flux of gas clusters and directing perpendicular ions to enhance radical delivery and ion interaction with substrate surfaces, allowing for increased radical density and controlled etching within high aspect ratio cavities.

Benefits of technology

CLAAPP techniques enable the formation of high aspect ratio features up to 150, surpassing the limitations of conventional methods by increasing radical density and maintaining anisotropy, thereby improving the manufacturing of semiconductor devices.

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Abstract

A method for processing a substrate includes forming a patterned layer on the substrate, the layer including an opening, the opening having a surface including a sidewall and a bottom wall. The method includes processing the patterned layer using an anisotropic process by generating a flux of gas clusters above the substrate in a first processing chamber, the gas clusters including radical precursors, and exposing the substrate to the flux of gas clusters. The method also includes maintaining a plasma including ions in a second processing chamber and exposing the substrate to the ions by directing the ions toward the bottom wall of the opening.
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