Film deposition method and film deposition apparatus
The method allows for selective film deposition on convex surfaces of substrates by moving a liquid from recesses to protrusions using a processing gas, addressing the challenge of precise film formation on complex geometries without photolithography.
JP7884325B2Inactive Publication Date: 2026-07-03TOKYO ELECTRON LTD
Patent Information
- Application Number
- JP2021064172
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2020-05-08
- Filing Date
- 2021-04-05
- Publication Date
- 2026-07-03
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
To provide a technique for selectively forming a film on a protrusion top face of a substrate surface including a recess and a protrusion adjacent each other.SOLUTION: A film deposition method includes the following (A) and (B): (A) supplying a liquid to a recess of a substrate whose surface includes the recess and a protrusion adjacent each other; and (B) supplying a process gas for chemically changing the liquid to the surface of the substrate, moving the liquid from the recess to a top surface of the protrusion by a reaction between the process gas and the liquid, and selectively forming a film on the top face of the protrusion on the surface of the substrate.SELECTED DRAWING: Figure 1
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Citation Information
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