Semiconductor equipment

Abstract

To maintain the insulation between connection terminals and suppress increase of the size of a semiconductor device.SOLUTION: The present invention includes: a flat plate-like insulation unit 30 provided between a first power terminal 21 and a second power terminal 22; and a case 10 including a first power terminal 21 and a second power terminal 22 with an exposed first joint region 21a and an exposed second joint region 22a, the insulating unit 30 being joined to the case. The insulation unit 30 includes: sheet-like insulation paper; and a sealing unit for covering at least one of an upper surface or a lower surface of the insulation paper. The insulation unit 30 thus can maintain the insulation between the first power terminal 21 and the second power terminal 22.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a semiconductor device.

Background Art

[0002] Semiconductor devices include power devices and are used as power conversion devices. Power devices include semiconductor chips. Semiconductor chips are, for example, IGBTs (Insulated Gate Bipolar Transistors) or power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). Such semiconductor devices at least include semiconductor chips, an insulating circuit board on which the semiconductor chips are arranged, and P-type and N-type connection terminals, and are housed in a case. The P-type and N-type connection terminals are connected to the outside respectively. In particular, the P-type and N-type connection terminals are integrally formed with the case (see, for example, Patent Document 1). Also, terminal portions of P-type and N-type electrode plates bent in an L shape are horizontally arranged on the upper surface of the exterior case and bolts are attached (see, for example, Patent Document 2). At this time, insulation between the P-type and N-type connection terminals must be maintained. For this reason, for example, an insulating member is sandwiched between these terminals (see, for example, Patent Documents 3 and 4).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Summary of the Invention

Problems to be Solved by the Invention

[0004] In semiconductor devices, the insulating material between P-type and N-type connectors can be, for example, a resin of the same quality as the case. In this case, the insulating material must have a predetermined thickness to maintain insulation between the P-type and N-type connectors. This leads to an increase in the size of the semiconductor device. Alternatively, using insulating paper as the insulating material can suppress the increase in size of the semiconductor device. However, insulating paper is difficult to handle and does not adhere well to the resin that makes up the case. For example, when insulating paper is placed between P-type and N-type connectors, the insulating paper may bend or crease. Even if the insulating paper is placed between the P-type and N-type connectors while bent, it may not be possible to adequately maintain the insulation between the P-type and N-type connectors.

[0005] This invention has been made in view of these points, and aims to provide a semiconductor device that can maintain insulation between connection terminals and suppress enlargement. [Means for solving the problem]

[0006] According to one aspect of the present invention, the present invention comprises a first power terminal including a first bonding region, a second power terminal including a second bonding region, a flat insulating unit provided between the first power terminal and the second power terminal, exposing the first bonding region and the second bonding region, and a case including the first power terminal and the second power terminal, to which the insulating unit is bonded, the insulating unit comprising a sheet-like first insulating portion and at least one of the upper or lower surfaces of the first insulating portion. and the side portion of the first insulating part A semiconductor device is provided, comprising a second insulating part that covers the first insulating part. [Effects of the Invention]

[0007] The semiconductor device with the above configuration can maintain insulation between connection terminals and suppress increase in size. [Brief explanation of the drawing]

[0008] [Figure 1]This is a plan view of the semiconductor device according to the first embodiment. [Figure 2] This is a cross-sectional view of a semiconductor device according to the first embodiment. [Figure 3] This is a plan view of the area near the terminal portion included in the semiconductor device of the first embodiment. [Figure 4] This is a diagram of an insulating unit included in the semiconductor device of the first embodiment. [Figure 5] This is a flowchart of the manufacturing method for the case of the semiconductor device according to the first embodiment. [Figure 6] This is a diagram (part 1) showing the insulating unit manufacturing process included in the manufacturing method of the semiconductor device case according to the first embodiment. [Figure 7] This is a diagram of the insulating unit immediately after the insulating unit manufacturing process included in the manufacturing method of the semiconductor device case according to the first embodiment. [Figure 8] This is a diagram of a mold for an insulating unit used in the manufacturing method of a semiconductor device case according to the first embodiment. [Figure 9] This is a diagram (part 2) showing the insulating unit manufacturing process included in the manufacturing method of the semiconductor device case according to the first embodiment. [Figure 10] This is a plan view of the semiconductor device according to the second embodiment. [Figure 11] This is a cross-sectional view of the main part of the semiconductor device according to the second embodiment. [Figure 12] This is a diagram of the first power terminal and the second power terminal included in the semiconductor device of the second embodiment. [Modes for carrying out the invention]

[0009] The embodiments will be described below with reference to the drawings. In this embodiment, the front side (upper side) refers to the side (direction) of the semiconductor device 1 (case 10) in Figure 1 that is facing upwards. .figure1 represents the front surface and side surfaces of the semiconductor device 1. For example, the sealing surface of the sealing member that seals the storage portions 12a, 12b, and 12c of the case 10 is the front surface (upper side). The back surface (lower side) represents the surface (direction) facing downward in the semiconductor device 1 of FIG. 1. For example, the surface on which the heat sink is disposed with respect to the case 10 is the back surface (lower side). Even when other than FIG. 1, the front surface (upper side) and the back surface (lower side) mean the same directionality. For example, "up" and "down" do not necessarily mean the vertical direction with respect to the ground. That is, the directions of "up" and "down" are not limited to the gravitational direction. Further, in the following description, "main component" represents a case where it contains 80 vol% or more.

[0010] [First Embodiment] The semiconductor device 1 of the first embodiment will be described with reference to FIGS. 1 to 4. FIG. 1 is a plan view of the semiconductor device of the first embodiment, and FIG. 2 is a cross-sectional view of the semiconductor device of the first embodiment. FIG. 3 is a plan view of the vicinity of the terminal portion included in the semiconductor device of the first embodiment. FIG. 4 is a view of the insulating unit included in the semiconductor device of the first embodiment. Note that in FIG. 1, the illustration of the semiconductor unit and the encapsulating resin is omitted from the semiconductor device 1. FIG. 2 is a cross-sectional view taken along the dashed line Y - Y in FIG. 1. FIG. 3 is a plan figure view of the terminal portion 20 of the storage portion 12a, and the case 10 is shown by a dashed line. The storage portions 12b and 12c have the same configuration. Further, in FIG. 4, the middle view is a plan view of the insulating unit 30, the upper view is the upper end surface (front end surface 32a) of the insulating unit 30 shown in the middle, and the lower view is the lower end surface (rear end surface 32b) of the insulating unit 30 shown in the middle, respectively.

[0011] The semiconductor device 1 includes a semiconductor unit (not shown) and a case 10 that houses the semiconductor unit. Further, it may include a heat sink (not shown) provided on the back surface of the case 10 where the semiconductor unit is disposed.

[0012] The case 10 includes a frame portion 11, a terminal portion 20, a U-phase output terminal 23, a V-phase output terminal 24, a W-phase output terminal 25, and a control terminal (not shown). The frame portion 11 has a substantially rectangular shape in plan view, and its four sides are surrounded by the first to fourth side portions 11a to 11d. The frame portion 11 , the includes storage portions 12a, 12b, and 12c along the third side portion 11c. Along the third side portion 11c of the frame portion 11, three terminal openings 11e are provided in the third side portion 11c. The terminal openings 11e are open and communicate with the storage portions 12a, 12b, and 12c. Also, in plan view, the terminal openings 11e widen toward the outside (+X direction). In such terminal openings 11e, terminal portions 20 are respectively provided. The terminal portion 20 includes a second power terminal 22, an insulating unit 30, and a first power terminal 21.

[0013] The storage portions 12a, 12b, and 12c are partitioned by partition portions 12d and 12e in the middle portion of the frame portion 11 of the case 10 in plan view, and are respectively provided along the longitudinal direction of the frame portion 11 (the first and third side portions 11a and 11c). Semiconductor units are respectively stored in the storage portions 12a, 12b, and 12c. The semiconductor units are electrically connected to the first power terminal 21 and the second power terminal 22 respectively within the storage portions 12a, 12b, and 12c. Also, the semiconductor units are electrically connected to the U-phase output terminal 23, the V-phase output terminal 24, and the W-phase output terminal 25 respectively within the storage portions 12a, 12b, and 12c. Also, the semiconductor units are electrically connected to a control terminal (not shown). Note that the control terminal may be provided in the partition portions 12d and 12e. These electrical connections use wiring members (for example, bonding wires, lead frames). The wiring members are made of a material with excellent conductivity. Such a material is a metal (for example, aluminum, copper), or an alloy containing at least one of these. The storage portions 12a, 12b, and 12c are sealed inside with a sealing resin with the semiconductor units stored in this way.

[0014] The sealing member comprises a thermosetting resin and a filler contained in the thermosetting resin. The thermosetting resin is an epoxy resin, phenolic resin, maleimide resin, etc. The filler is silicon oxide, aluminum oxide, boron nitride, or aluminum nitride.

[0015] As shown in Figures 2 and 3, the terminal section 20 is constructed by sequentially stacking a second power terminal 22, an insulating unit 30, and a first power terminal 21. The terminal section 20 is integrally molded with the frame section 11. The front surfaces of the second joining region 22a of the second power terminal 22, the terrace portion 30a of the insulating unit 30, and the first joining region 21a of the first power terminal 21 are exposed through the terminal opening 11e of the third side portion 11c of the terminal section 20.

[0016] The second power terminal 22 is flat. One end of the front surface of the second power terminal 22 is exposed along the longitudinal direction (third side portion 11c) at the terminal opening 11e of the third side portion 11c of the frame portion 11. The back surface of the second power terminal 22 is covered by the bottom portion 11g of the frame portion 11. Here, one end of the second power terminal 22 (second junction region 22a) protrudes outward (+X direction) from the third side portion 11c (and the bottom portion 11g of the frame portion 11). The potential of the positive electrode is connected to the second junction region 22a from the outside. The other end of the second power terminal 22 is electrically connected to the main electrode of the semiconductor chip inside the housing portions 12a, 12b, and 12c of the frame portion 11. The second power terminal 22 is made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy.

[0017] The insulating unit 30 has insulating properties and is in the shape of a flat plate. As shown in Figure 4, the upper part (+X direction side) of the side end faces 32c, 32d on both sides in the ±Y direction of the insulating unit 30 Width in the (±Y direction)The insulating unit 30 has a shape that narrows as it moves. In plan view, the insulating unit 30 is wider (in the ±Y direction) than the second power terminal 22. The sides of the insulating unit 30 in the ±Y direction are covered (closely attached) to the frame 11. The insulating unit 30 also protrudes outward (in the +X direction) from the third side portion 11c. There is a gap (the second joining region 22a of the second power terminal 22) between the tip of the insulating unit 30 and the tip of the second power terminal 22. The insulating unit 30 also has a terrace portion 30a where the surface of the insulating unit 30 is exposed. This terrace portion 30a is located as an insulating region between the first joining region 21a of the first power terminal 21 and the second joining region 22a of the second power terminal 22. This maintains insulation between the first power terminal 21 and the second power terminal 22. Note that the plan view shape of the insulating unit 30 in this embodiment is just one example. The insulating unit 30 is not limited to the shape shown in this embodiment, as long as it is sandwiched between the first power terminal 21 and the second power terminal 22 and the insulation between the first power terminal 21 and the second power terminal 22 is maintained.

[0018] Furthermore, the insulating unit 30 comprises insulating paper 31 (first insulating part) and sealing part 32 (second insulating part). An adhesive member may be included between the insulating paper 31 and the sealing part 32. The adhesive member is not shown in Figure 4. In the insulating unit 30, as shown in Figure 4, the front cut surface 31a of the insulating paper 31 is coplanar with the front end surface 32a of the sealing part 32 and is exposed. Also, the rear cut surface 31b of the insulating paper 31 is coplanar with the rear end surface 32b of the sealing part 32 and is exposed. As will be described later, during the manufacturing process of the insulating unit 30, the portion of the insulating paper 31 that protrudes from the sealing part 32 is cut off. The front cut surface 31a and the rear cut surface 31b are the cut surfaces at that time. The insulating paper 31 is, for example, aramid paper. Aramid paper is insulating paper constructed by weaving together high-density aramid fibers. The insulating paper 31 can be any sheet-like insulating material and is not limited to paper. For example, a film may be used. The sealing portion 32 seals the insulating paper 31 by sandwiching it between the insulating paper 31. That is, the sealing portion 32 covers the top, bottom, and sides of the insulating paper 31. In this embodiment, the case in which the insulating paper 31 is completely covered by the sealing portion 32 is described. However, it is not limited to this case, and at least one of the top or bottom surfaces of the insulating paper 31 may be covered by the sealing portion 32. The sealing portion 32 is mainly composed of a thermoplastic resin (second resin). Examples of thermoplastic resins include polyphenylene sulfide (PPS) resin, polybutylene terephthalate (PBT) resin, polybutylene succinate (PBS) resin, polyamide (PA) resin, or acrylonitrile butadiene styrene (ABS) resin. Details of the insulating unit 30 will be described later.

[0019] The first power terminal 21 is flat. One end of the front surface of the first power terminal 21 is exposed along the longitudinal direction (third side portion 11c) at the terminal opening 11e of the third side portion 11c of the frame portion 11. The width (±Y direction) of the portion of the first power terminal 21 exposed at the terminal opening 11e is approximately the same as the width (±Y direction) of the portion of the second power terminal 22 exposed at the terminal opening 11e. The first power terminal 21 is positioned on the second power terminal 22 with one end (first junction region 21a) exposed, with the insulating unit 30 in between. That is, the housing portions 12a, 12b, and 12c of the exposed portion of the first power terminal 21 are covered by the beam portion 11f of the case 10. The first junction region 21a is connected to the potential of the negative electrode from the outside. The other end of the first power terminal 21 is electrically connected to the main electrode of the semiconductor chip inside the housing sections 12a, 12b, and 12c of the frame 11. The first power terminal 21 is made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy.

[0020] In such a terminal section 20, as shown in Figure 3, the first bonding area 21a of the first power terminal 21 is separated by a predetermined distance from the second bonding area 22a of the second power terminal 22. This maintains the creepage distance between the first power terminal 21 and the second power terminal 22. The distance in this case varies depending on the withstand voltage value of the semiconductor device 1. This distance is, for example, 3 mm or more and 14.5 mm or less. Alternatively, it may be 6 mm or more and 12.5 mm or less. Furthermore, if the withstand voltage value is 750 V, this distance may be 7.5 mm plus a tolerance of 0.5 mm, and if it is 1200 V, it may be 12 mm plus a tolerance of 0.5 mm. Also, the terrace portion 30a of the insulating unit 30 is within this creepage distance. within range It is located in [location].

[0021] The other ends of the U-phase output terminal 23, V-phase output terminal 24, and W-phase output terminal 25 are electrically connected to the source electrodes (or emitter electrodes) of the semiconductor chips of the semiconductor units in the housing sections 12a, 12b, and 12c, respectively. One end of the U-phase output terminal 23, V-phase output terminal 24, and W-phase output terminal 25 is exposed on the first side portion 11a of the frame portion 11 along the longitudinal direction of the frame portion 11 (first side portion 11a). The U-phase output terminal 23, V-phase output terminal 24, and W-phase output terminal 25 are made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy.

[0022] The other ends of the first power terminal 21, the second power terminal 22, and the U-phase output terminal 23, the V-phase output terminal 24, and the W-phase output terminal 25 are electrically connected to the main electrodes of the semiconductor chip, such as the emitter electrode (or source electrode) and collector electrode (or drain electrode).

[0023] Furthermore, control terminals One end of the control terminal may extend in the +Z direction from the partitions 12d and 12e, for example. The other end of the control terminal is electrically connected to the gate electrodes (control electrodes) of the semiconductor chips of the semiconductor units in the housings 12a, 12b, and 12c, respectively. The control terminal is made of a metal with excellent conductivity. Such metals include, for example, copper, copper alloys, aluminum, and aluminum alloys.

[0024] In this case 10, the frame portion 11 includes a terminal portion 20, a U-phase output terminal 23, a V-phase output terminal 24, a W-phase output terminal 25, and a control terminal, and is integrally molded by injection molding using a thermoplastic resin (first resin). The thermoplastic resin is, for example, polyphenylene sulfide resin, polybutylene terephthalate resin, polybutylene succinate resin, polyamide resin, or acrylonitrile butadiene styrene resin. The resin of the frame portion 11 may be different from the resin of the sealing portion 32 of the insulating unit 30. In this embodiment, PPS resin is used as the resin for both the frame portion 11 and the sealing portion 32.

[0025] The semiconductor unit includes an insulating circuit board, a semiconductor chip mounted on the insulating circuit board, and a lead frame that electrically connects the semiconductor chip and the insulating circuit board. The insulating circuit board has a rectangular shape in plan view. The insulating circuit board includes an insulating plate, a plurality of circuit patterns provided on the front surface of the insulating plate, and a metal plate provided on the back surface of the insulating plate. The insulating plate is made of a material that has insulating properties, low thermal resistance, and excellent thermal conductivity. Such an insulating plate is made of ceramics. Examples of ceramics include aluminum oxide, aluminum nitride, and silicon nitride. The plurality of circuit patterns are made of a material with excellent conductivity. Examples of such materials include copper, aluminum, or alloys containing at least one of these. The metal plate is made of a metal with excellent thermal conductivity. Examples of such materials include copper, aluminum, or alloys containing at least one of these.

[0026] A semiconductor chip is a power device composed of silicon, silicon carbide, or gallium nitride. As previously described, the semiconductor chip is an RC-IGBT. An RC-IGBT is a device in which an IGBT (a switching element) and a FWD (Free Wheeling Diode) (a diode element) are configured on a single chip. Such a semiconductor chip has, for example, a collector electrode (positive electrode) and an anode electrode as main electrodes on the back surface, and a gate electrode as a control electrode, and an emitter electrode (negative electrode) and a cathode electrode as main electrodes on the front surface. Alternatively, the switching element and the diode element may be on separate chips. In this case, the switching element is a power MOSFET or an IGBT. Such a semiconductor chip has, for example, a drain electrode (positive electrode, collector electrode in the case of an IGBT) as a main electrode on the back surface, and a gate electrode as a control electrode and a source electrode (negative electrode, emitter electrode in the case of an IGBT) as main electrodes on the front surface. Furthermore, the diode elements are FWDs such as SBDs (Schottky Barrier Diodes) and PiN (P-intrinsic-N) diodes. Such semiconductor chips have a cathode electrode as the main electrode on the back side and an anode electrode as the main electrode on the front side. The back side of the semiconductor chip is joined to a predetermined circuit pattern by a bonding member. The bonding member is either solder or a sintered body. The solder is made of lead-free solder mainly composed of a predetermined alloy. When joining by sintering, the sintered material is, for example, powder of silver, iron, copper, aluminum, titanium, nickel, tungsten, or molybdenum.

[0027] The lead frame connects the semiconductor chip and the circuit pattern on the insulating circuit board to form a predetermined circuit. The lead frame is made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy. The semiconductor device 1 realizes an equivalent circuit, which is a three-phase inverter circuit, using such semiconductor units.

[0028] The heat sink is flat and rectangular in shape when viewed from above. The heat sink may also cover the housing sections 12a, 12b, and 12c of the case 10 from the back when viewed from above. The heat sink is made of a metal with excellent thermal conductivity. Examples of such materials include aluminum, iron, silver, copper, or alloys containing at least one of these. An example of such an alloy is aluminum- carbonization Silicon (Al-SiC) or magnesium- carbonization Metal composite materials such as silicon (Mg-SiC) are also acceptable.

[0029] Furthermore, a cooling unit (not shown) may be attached to the back surface of the case 10 to which the heat sink is mounted. In this case, the cooling unit is made of, for example, a metal with excellent thermal conductivity. The metal may be aluminum, iron, silver, copper, or an alloy containing at least one of these. The cooling unit may also be, for example, a heat sink or water-cooled jacket having one or more fins. The heat sink may also be integrated with such a cooling unit.

[0030] In semiconductor device 1, the second power terminal 22 is electrically connected to the collector electrode of the semiconductor chip on the upper arm of each semiconductor unit within the housing sections 12a, 12b, and 12c. The U-phase output terminal 23, V-phase output terminal 24, and W-phase output terminal 25 are electrically connected to the emitter electrode of the semiconductor chip on the upper arm and the collector electrode of the semiconductor chip on the lower arm of each semiconductor unit within the housing sections 12a, 12b, and 12c. In addition, the first power terminal 21 is electrically connected to the emitter electrode of the semiconductor chip on the lower arm of each semiconductor unit within the housing sections 12a, 12b, and 12c. As a result, semiconductor device 1 functions as an inverter.

[0031] Next, the manufacturing method for the case 10 included in such a semiconductor device 1 will be explained with reference to Figures 5 and 4. Figure 5 is a flowchart of the manufacturing method for the case of the semiconductor device according to the first embodiment. Note that the manufacturing method for the case 10 is included in the manufacturing method for the semiconductor device 1.

[0032] In manufacturing case 10, a preparation process is first carried out to prepare various terminals, sheet-like insulating material, and case material for case 10 (frame portion 11) (step S10). In step S10, other materials, tools, parts, etc. necessary for manufacturing case 10 are also prepared as needed. The various terminals are the first power terminal 21, the second power terminal 22, the U-phase output terminal 23, the V-phase output terminal 24, the W-phase output terminal 25, and the control terminal. The insulating material is, for example, aramid paper. The case material is, for example, PPS resin.

[0033] Next, an insulating unit manufacturing process is carried out to manufacture the insulating unit 30 (step S11). The insulating unit 30 shown in Figure 4 can be manufactured by several methods. Hereinafter, an example of a manufacturing method will be described using Figures 6 and 7. Figure 6 is a diagram showing the insulating unit manufacturing process included in the manufacturing method of the semiconductor device case of the first embodiment, and Figure 7 is a diagram of the insulating unit immediately after the insulating unit manufacturing process included in the manufacturing method of the semiconductor device case of the first embodiment. Figure 6(A) is a side view taken in the +X direction when the sealing upper surface portion 32e and sealing lower surface portion 32f constituting the sealing portion 32 are attached to the insulating paper 31 in the insulating unit manufacturing process. Figure 6(B) is a similar side view taken in the +Y direction when the sealing upper surface portion 32e and sealing lower surface portion 32f are attached to the insulating paper 31. Figure 7(A) is a plan view immediately after the sealing portion 32 is attached to the insulating paper 31, and Figure 7(B) is a similar side view.

[0034] First, the insulating paper 31 shown in Figure 4 is obtained from a single sheet of insulating material. This is done by die-cutting and cutting out the insulating paper. Next, the sealing portion 32 is formed in advance. The sealing portion 32 includes a sealing upper portion 32e and a sealing lower portion 32f which are divided parallel to the main surface (XY plane) (see Figure 6). In this case, the sealing portion 32 is made of PPS resin. Therefore, the sealing upper portion 32e and the sealing lower portion 32f each have recesses 32e1 and 32f1 formed on their opposing surfaces, corresponding to the shape of the insulating paper 31.

[0035] Next, the insulating paper 31 is sandwiched between the sealing upper surface 32e and sealing lower surface 32f. At this time, as shown in Figure 6, adhesive member 33 is applied to the recesses 32e1 and 32f1 of the sealing upper surface 32e and sealing lower surface 32f. As the insulating paper 31 is sandwiched between the sealing upper surface 32e and sealing lower surface 32f, the insulating unit 30 shown in Figure 7 is manufactured. Note that in the insulating unit 30 shown in Figure 7, the insulating paper 31 protrudes from the front end surface 32a and rear end surface 32b of the sealing portion 32. The protruding portion of the insulating paper 31 is cut off as needed. Thus, the insulating unit 30 shown in Figure 4 is obtained.

[0036] Here, we give an example where the sealing upper portion 32e and sealing lower portion 32f cover both sides of the insulating paper 31, but do not cover the front cut surface 31a and rear cut surface 31b of the insulating paper 31. The sealing upper portion 32e and sealing lower portion 32f may be manufactured to cover the entire circumference of the insulating paper 31. Furthermore, the insulating paper 31 does not necessarily need to be completely covered; it is sufficient if at least one main surface is covered by the sealing portion 32. For this reason, only one of the sealing upper portion 32e or sealing lower portion 32f may be attached to the insulating paper 31. Moreover, in this case, the sides of the insulating paper 31 do not need to be covered.

[0037] Furthermore, another example of the manufacturing method of the insulating unit 30 shown in Figure 4 will be explained using Figures 8, 9, and 7. Figure 8 is a diagram of the mold for the insulating unit used in the manufacturing method of the semiconductor device case of the first embodiment. Figure 9 is a diagram of the insulating unit manufacturing process included in the manufacturing method of the semiconductor device case of the first embodiment. Figure 8(A) is a plan view of the insulating paper storage section 51 of the insulating unit mold 50, and Figure 8(B) is a plan view of the sealing storage section 52 of the insulating unit mold 50. Figure 9(A) is a plan view of the insulating paper storage section 51 of the insulating unit mold 50 with the insulating paper 31 set in it. Figure 9(B) is a cross-sectional view of the insulating unit mold 50 with the insulating paper 31 set in it (corresponding to the dashed line XX in Figure 9(A)).

[0038] The insulating unit 30 can be manufactured by injection molding. The mold 50 for the insulating unit used in this process includes an insulating paper storage section 51 and a pair of sealing storage sections 52 that sandwich the insulating paper storage section 51. The insulating paper storage section 51 is flat and has an insulating paper opening 51a, as shown in Figure 8(A). The insulating paper opening 51a is shaped to fit the outer shape of the insulating paper 31. correspondence The mold 50 for the insulating unit has the following shape. The sealing storage section 52 is also flat, and as shown in Figure 8(B), a concave sealing filling section 52a is formed. Such an insulating unit mold 50 is made of a material that is heat resistant and has a small coefficient of thermal expansion. Such a material is, for example, carbon. First, as shown in Figure 9(A), the insulating paper 31 is attached to the insulating paper opening 51a of the insulating paper storage section 51 of the insulating unit mold 50.

[0039] Next, as shown in Figure 9(B), sealing storage sections 52 are attached to the front and back surfaces of the insulating paper storage section 51 to which the insulating paper 31 is attached. At this time, the sealing filling section 52a of the sealing storage section 52 is positioned opposite the insulating paper storage section 51. As a result, the insulating paper 31 attached to the insulating paper storage section 51 is housed in the cavity 53 formed by the sealing filling section 52a. Unit material is then filled into the cavity 53 of the insulating unit mold 50 containing the insulating paper 31 and allowed to solidify. The unit material is, for example, PPS resin. This produces the insulating unit 30 shown in Figure 7. In this case as well, any excess portion of the insulating paper 31 is cut off as needed. As a result, the insulating unit 30 shown in Figure 4 is obtained.

[0040] After step S11, a setting process is performed in which the components are set into the mold for the case (step S12). The components at this time are the first power terminal 21, the insulating unit 30, the second power terminal 22, the U-phase output terminal 23, the V-phase output terminal 24, the W-phase output terminal 25, and the control terminal. When setting, the second power terminal 22, the insulating unit 30, and the first power terminal 21 are stacked. Next, an insert molding process is performed in which the case material is filled into the mold for the case (step S13). The case material is, for example, PPS resin. In particular, the insulating unit 30 set in the mold for the case is made of the same resin as the case material. Therefore, the insulating unit 30 adheres securely to the frame 11 (see, for example, Figure 3). Therefore, the insulating unit 30 is securely attached to the frame 11 without misalignment. As a result, the case 10 shown in Figures 1 and 2 is obtained.

[0041] The case 10 manufactured in this manner is then set on a heat sink to which the semiconductor unit is attached. At this time, the semiconductor unit is housed in the storage compartments 12a, 12b, and 12c of the case 10. The semiconductor device 1 is obtained by a wiring process that electrically connects the semiconductor unit to the various terminals of the case 10 and by filling the storage compartments 12a, 12b, and 12c with sealing material.

[0042] The semiconductor device 1 includes a first power terminal 21 including a first bonding region 21a, a second power terminal 22 including a second bonding region 22a, a flat insulating unit 30 provided between the first power terminal 21 and the second power terminal 22 with the first bonding region 21a and the second bonding region 22a exposed, and a case 10 including the first power terminal 21 and the second power terminal 22 with the first bonding region 21a and the second bonding region 22a exposed, to which the insulating unit 30 is bonded. The insulating unit 30 includes a sheet of insulating paper 31 and a sealing portion 32 that covers at least one of the upper or lower surfaces of the insulating paper 31. Therefore, the insulating unit 30 can maintain insulation between the first power terminal 21 and the second power terminal 22. Since the insulating unit 30 can suppress an increase in its thickness, the increase in size of the semiconductor device 1 can be suppressed. Furthermore, since the insulating unit 30 includes insulating paper 31, its insulating properties can be improved while suppressing an increase in its thickness. Furthermore, unlike the case with only insulating paper 31, the insulating unit 30 has increased strength and there is no risk of bending. The sealing portion 32 on the outside of the insulating unit 30 is made of resin, just like the case 10. Therefore, the insulating unit 30 is fixed to the case 10 and displacement is prevented.

[0043] The thickness of the insulating unit 30 will now be explained. The dielectric breakdown voltage per unit thickness is 31kV / mm for the insulating paper 31 and 13kV / mm for the sealing part 32 (PPS resin). Therefore, the dielectric breakdown voltage per unit thickness of the insulating unit 30 is 44kV / mm, which is the sum of these two. In order to maintain the reliability of the semiconductor device 1, the insulating unit 30 requires a dielectric breakdown voltage of 15kV or more. Therefore, the insulating unit 30 requires a thickness of at least 0.8mm, based on the dielectric breakdown voltage per unit thickness of 44kV / mm and the dielectric breakdown voltage of 15kV.

[0044] Furthermore, based on the above, the thickness of the insulating paper 31 and the sealing portion 32 of the insulating unit 30 can be set as follows. For example, if the dielectric breakdown voltage of the insulating paper 31 and the sealing portion 32 is to be 7.75kV or more, the insulating paper 31 must be 0.25mm or thicker, and the sealing portion 32 must be 0.55mm or thinner.

[0045] Alternatively, if the thickness of the insulating paper 31 is 0.35 mm, the dielectric breakdown voltage of the insulating paper 31 will be approximately 10.85 kV. In this case, the dielectric breakdown voltage of the sealing portion 32 must be 4.16 kV or higher, and its thickness must be 0.32 mm. That's all. Therefore, the thickness of the insulating unit 30 in this case is 0.67 mm.

[0046] [Second Embodiment] In the second embodiment, a case different from the first embodiment will be described using Figure 10. Figure 10 is a plan view of the semiconductor device of the second embodiment. The semiconductor device 1a also comprises a semiconductor unit (not shown) and a case 10a that houses the semiconductor unit. Furthermore, it may include a heat sink (not shown) provided on the back surface of the case 10a on which the semiconductor unit is arranged.

[0047] Case 10a includes a frame 11, a terminal section 20, a U-phase output terminal 23, a V-phase output terminal 24, a W-phase output terminal 25, and a control terminal (not shown). The frame 11 is roughly rectangular in plan view and is surrounded on all four sides by first to fourth side sections 11a to 11d. , the Along side portion 11a, storage portions 12a, 12b, and 12c are included. The frame portion 11 of case 10a includes, as in the first embodiment, a first power terminal 21, a second power terminal 22, and a U-phase output terminal 23, a V-phase output terminal 24, a W-phase output terminal 25, and control terminals (Figure omitted) is integrally molded. Furthermore, the first power terminal 21, the second power terminal 22, and the U-phase output terminal 23, V-phase output terminal 24, W-phase output terminal 25 are controlled terminals This is made of the same material as that of the first embodiment.

[0048] Furthermore, along the first side portion 11a of the frame portion 11, multiple pairs of second power terminals 22 and first power terminals 21 are arranged with the insulating unit 30 in between. These will be described later.

[0049] The storage sections 12a, 12b, and 12c are separated by partition sections 12d and 12e in the middle of the frame section 11 in a plan view, and are provided along the longitudinal direction of the frame section 11 (first and third sides 11a and 11c), respectively. Semiconductor units are stored in the storage sections 12a, 12b, and 12c, respectively. Within the storage sections 12a, 12b, and 12c, the semiconductor units are electrically connected to the other ends of the first power terminal 21 and the second power terminal 22 (the first connection section 21e and the second connection section 22e, described later), respectively. In addition, within the storage sections 12a, 12b, and 12c, the semiconductor units are electrically connected to the U-phase output terminal 23, the V-phase output terminal 24, and the W-phase output terminal 25, respectively. terminals One end of the control terminal may extend in the +Z direction from the partitions 12d and 12e, for example. The other end of the control terminal is electrically connected to the gate electrodes (control electrodes) of the semiconductor chips of the semiconductor units in the storage sections 12a, 12b, and 12c, respectively.

[0050] One end of the U-phase output terminal 23, the V-phase output terminal 24, and the W-phase output terminal 25 is located on the front surface of the third side portion 11c of the frame portion 11 in the longitudinal direction of the frame portion 11. Third side portion 11c They are exposed along the lines of the respective components. The other ends of the U-phase output terminal 23, V-phase output terminal 24, and W-phase output terminal 25 are exposed in the housing sections 12a, 12b, and 12c. The other ends of the U-phase output terminal 23, V-phase output terminal 24, and W-phase output terminal 25 are electrically connected to the source electrode (or emitter electrode) of the semiconductor chip of each semiconductor unit.

[0051] Next, the second power terminal 22 and the first power terminal 21, which are provided on the first side portion 11a of the frame portion 11 and which clamp the insulating unit 30, will be described with reference to Figures 11 and 12. Figure 11 is a cross-sectional view of the main part of the semiconductor device of the second embodiment. Figure 12 is a diagram of the first power terminal and the second power terminal included in the semiconductor device of the second embodiment. Note that Figure 11 is a cross-sectional view in the XY plane of the region enclosed by the dashed line in Figure 10. Figure 12(A) is a perspective view of the first power terminal 21, and Figure 12(B) is a perspective view of the second power terminal 22.

[0052] The first power terminal 21 includes a first joint portion 21b, a first wiring portion 21c, a first linking portion 21d, and a first connection portion 21e. The first joint portion 21b, the first wiring portion 21c, the first linking portion 21d, and the first connection portion 21e are each flat.

[0053] The first joint portion 21b has a first fastening hole 21b1 formed therein, which is oriented in the -X direction toward the first side portion 11a. That is, the first joint portion 21b is parallel to the ZY plane. An N-type external terminal is connected to the first fastening hole 21b1 of the first joint portion 21b from the outside.

[0054] The first wiring section 21c is connected perpendicularly to the first joint section 21b. That is, the first joint section 21b is formed by bending from the first wiring section 21c. The first wiring section 21c is integrally connected to the +Y end of the first joint section 21b and extends into the first side section 11a of the frame section 11. That is, the first wiring section 21c is parallel to the ZX plane.

[0055] The first connecting portion 21d is connected perpendicularly to the first wiring portion 21c. That is, the first connecting portion 21d bends from the first wiring portion 21c and faces the first joint portion 21b. The first connecting portion 21d is integrally connected to and extends from the +X end of the first wiring portion 21c. That is, the first connecting portion 21d is parallel to the ZY plane. Note that the first joint portion 21b, the first wiring portion 21c, and the first connecting portion 21d form a U-shape in plan view.

[0056] The first connection portion 21e is connected perpendicularly to the first linking portion 21d. That is, the first connection portion 21e is bent from the first linking portion 21d and is also perpendicular to the first joint portion 21b and the first wiring portion 21c. The first connection portion 21e is integrally connected to the -Z end of the first linking portion 21d and extends into the first side portion 11a of the frame portion 11. That is, the first connection portion 21e is parallel to the XY plane. The first connection portion 21e is electrically connected to the main electrode of the semiconductor chip within the frame portion 11.

[0057] A nut cover 13 is provided in the region enclosed by the first joint portion 21b, the first wiring portion 21c, and the first linking portion 21d of the first power terminal 21. The nut cover 13 has a nut 13b integrally molded with the cover body 13a. The cover body 13a also includes a space (bolt storage portion 13c) behind the nut 13b (towards the first linking portion 21d) that leads to the hole in the nut 13b. The nut cover 13 is provided so that the nut 13b corresponds to the first fastening hole 21b1 of the first joint portion 21b. Therefore, a bolt inserted into the first fastening hole 21b1 of the first joint portion 21b is screwed into the nut 13b. bolt It is stored in the storage compartment 13c. Such a nut cover 13 is also manufactured by integrally molding it with the nut 13b included in advance.

[0058] The second power terminal 22 also includes a second joint 22b, a second wiring section 22c, a second linking section 22d, and a second connection section 22e. The second joint 22b, the second wiring section 22c, the second linking section 22d, and the second connection section 22e are all flat plates.

[0059] The second joint portion 22b has a second fastening hole 22b1 formed therein, which is oriented in the -X direction toward the first side portion 11a. That is, the second joint portion 22b is parallel to the ZY plane. A P-type external terminal is connected to the second fastening hole 22b1 of the second joint portion 22b from the outside.

[0060] The second wiring section 22c is connected perpendicularly to the second joint section 22b. That is, the second joint section 22b is formed by bending from the second wiring section 22c in the direction opposite to the first joint section 21b. The second wiring section 22c is integrally connected to the -Y end of the second joint section 22b and extends into the first side section 11a of the frame section 11. That is, the second wiring section 22c is parallel to the ZX plane. Therefore, the second wiring section 22c faces the first wiring section 21c.

[0061] The second connecting portion 22d is connected perpendicularly to the second wiring portion 22c. That is, the second connecting portion 22d bends from the second wiring portion 22c and faces the second joint portion 22b. The second connecting portion 22d is integrally connected to and extends from the +X end of the second wiring portion 22c. That is, the second connecting portion 22d is parallel to the ZY plane. Note that the second joint portion 22b, the second wiring portion 22c, and the second connecting portion 22d form a U-shape in plan view.

[0062] The second connecting portion 22e is connected perpendicularly to the second linking portion 22d. That is, the second connecting portion 22e is bent from the second linking portion 22d and is also perpendicular to the second joint portion 22b and the second wiring portion 22c. The second connecting portion 22e is integrally connected to the -Z end of the second linking portion 22d and extends into the first side portion 11a of the frame portion 11. That is, the second connecting portion 22e It is parallel to the XY plane. The second connection portion 22e is electrically connected to the main electrode of the semiconductor chip within the frame portion 11.

[0063] A nut cover 14 is provided in the area enclosed by the second joint portion 22b, the second wiring portion 22c, and the second linkage portion 22d of the second power terminal 22. The nut cover 14 has a nut 14b integrally molded with the cover body 14a. The cover body 14a also includes a space (bolt storage portion 14c) behind the nut 14b (towards the second linkage portion 22d) that leads to the hole in the nut 14b. The nut cover 14 is provided so that the nut 14b corresponds to the second fastening hole 22b1 of the second joint portion 22b. Therefore, a bolt inserted into the second fastening hole 22b1 of the second joint portion 22b is screwed into the nut 14b. bolt It is stored in the storage compartment 14c. Such a nut cover 14 is also manufactured by integrally molding it with the nut 14b included in advance.

[0064] The insulating unit 30 has the same configuration as in the first embodiment. However, the shape of the insulating unit 30 in this embodiment in plan view is rectangular and includes areas that overlap with the first wiring portion 21c and the second wiring portion 22c. Such an insulating unit 30 is sandwiched between the first wiring portion 21c of the first power terminal 21 and the second wiring portion 22c of the second power terminal 22. The insulating unit 30 includes a portion that protrudes from this space in the -X direction more than the first joint portion 21b and the second joint portion 22b. The front cut surface 31a and the rear cut surface 31b of the insulating unit 30 may be oriented in the ±X direction or in the ±Z direction.

[0065] Such a case 10a and semiconductor device 1a can be manufactured in the same manner as the flowchart in Figure 5 of the first embodiment. In the second embodiment, the nut covers 13 and 14 are also molded in advance. In step S12, the nut covers 13 and 14 are set in the case mold along with the first power terminal 21, the insulating unit 30, the second power terminal 22, the U-phase output terminal 23, the V-phase output terminal 24, the W-phase output terminal 25, and the control terminals. In step S13, the case 10a is molded, including the nut covers 13 and 14. The insulating unit 30 of the second embodiment manufactured in this manner can also maintain insulation between the first power terminal 21 and the second power terminal 22 without increasing its thickness. Since the insulating unit 30 includes insulating paper 31, insulation can be enhanced while suppressing an increase in its thickness. Also, unlike the case with insulating paper 31 alone, the insulating unit 30 has increased strength and there is no risk of bending. The outer sealing portion 32 of the insulating unit 30 is made of resin, similar to the frame portion 11 of the case 10a. Therefore, the insulating unit 30 is fixed to the frame portion 11 of the case 10a, preventing misalignment. [Explanation of Symbols]

[0066] 1,1a Semiconductor device 10,10a case 11 Frame section 11a First side 11b Second side 11c Third side 11d Fourth side 11e Terminal opening 11f beam section 11g bottom 12a, 12b, 12c Storage compartments 12d, 12e Partition section 13, 14 Nut cover 13a, 14a Cover body 13b, 14b nuts 13c, 14c Bolt storage compartment 20 Terminal section 21. First power terminal 21a 1st joint area 21b 1st joint 21b1 1st fastening hole 21c 1st wiring section 21d First linkage section 21e First connection section 22 Second power terminal 22a 2nd joining area 22b 2nd joint 22b1 2nd fastening hole 22c 2nd wiring section 22d Second linkage section 22e Second connection section 23 U phase output terminal 24 V phase output terminal 25 W phase output terminal 30 Insulation Units 30a Terrace section 31 Insulating paper 31a Front cut surface 31b Rear cut surface 32 Sealing part 32a Front end surface 32b Rear end surface 32c,32d side end surface 32e Sealing top part 32f Sealing bottom part 33 Adhesive members 50 molds for insulating units 51 Insulating paper storage section 51a Insulating paper opening 52 Sealed storage section 52a Sealing filling part 53 Cavity

Claims

1. A first power terminal including a first bonding region, A second power terminal including a second junction region, The first bonding region and the second bonding region are exposed, and a flat insulating unit is provided between the first power terminal and the second power terminal, The first bonding region and the second bonding region are exposed, and the case includes the first power terminal and the second power terminal, and the insulating unit is bonded to it. Equipped with, The insulating unit comprises a sheet-like first insulating portion and a second insulating portion that covers at least one of the upper or lower surfaces of the first insulating portion and the side portion of the first insulating portion. Semiconductor equipment.

2. The case is made of a first resin, and the second insulating part is made of a second resin. The semiconductor device according to claim 1.

3. The first resin and the second resin are made of the same material. The semiconductor device according to claim 2.

4. The first resin and the second resin are thermoplastic resins. The semiconductor device according to claim 2 or 3.

5. The thermoplastic resin includes PPS resin. The semiconductor device according to claim 4.

6. At least one first end face of the first insulating portion is exposed from the second end face of the second insulating portion. The semiconductor device according to any one of claims 1 to 5.

7. The first end face is in the same plane as the second end face. The semiconductor device according to claim 6.

8. The thickness of the first power terminal and the second power terminal of the insulating unit in the stacking direction is 0.8 mm. The semiconductor device according to any one of claims 1 to 7.

9. The thickness of the first insulating portion is 0.25 mm or more. The thickness of the insulating unit excluding the first insulating portion is 0.55 mm or less. The semiconductor device according to claim 8.

10. The insulating unit has an insulating region, which is a terrace portion between the first joint region and the second joint region, where the surface of the insulating unit is exposed. A semiconductor device according to any one of claims 1 to 9.

11. The first power terminal includes a flat plate-shaped first wiring portion and a flat plate-shaped first bonding portion formed perpendicular to the first wiring portion and including the first bonding region on its front surface. The second power terminal includes a flat plate-shaped second wiring portion facing the first wiring portion, and a flat plate-shaped second joint portion formed perpendicular to the second wiring portion and extending in the opposite direction to the first joint portion, with the second joint region included on its front surface. The insulating unit is held in direct contact between the first wiring section and the second wiring section. The case includes the first power terminal, the second power terminal, and the insulating unit, and the first joining region of the first joining portion and the second joining region of the second joining portion are exposed from the side of the case. A semiconductor device according to any one of claims 1 to 9.

12. The insulating unit protrudes outward from between the first joint and the second joint. The semiconductor device according to claim 11.

13. The first insulating part and the second insulating part are made of different materials, The semiconductor device according to claim 1.

14. The first power terminal is a negative terminal and is stacked on top of the second power terminal with the insulating unit in between, The aforementioned second power terminal is the positive terminal. The semiconductor device according to claim 1.

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