Method for manufacturing a light-emitting device

Abstract

To provide a method of manufacturing a light-emitting device, which is excellent in inspection accuracy.SOLUTION: A method of manufacturing a light-emitting device includes: a step of preparing a light-emitting device including a substrate including a pair of wiring parts on a top face, a light-emitting part arranged on the substrate and including a pair of electrode parts on the top face, and first and second wires connecting between the pair of wiring parts and the pair of electrode parts, the first and second wires being arranged adjacent to each other in a predetermined direction; and a first inspection step of, in the predetermined direction, defining a direction from the first wire toward the second wire as an imaging direction, and imaging the first wire using a first camera to inspect the external appearance of the first wire. In the first inspection step, the first wire positioned within the depth of field of the first camera is imaged, in the state where the depth of field of the first camera ranges between a first position and a second position that is further away from the first camera than the first position in the predetermined direction, the second position being between the first wire and the second wire.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] This disclosure relates to a method for manufacturing a light-emitting device. [Background technology]

[0002] Conventionally, light-emitting devices having light-emitting elements such as LEDs (Light Emitting Diodes) have been widely used. As a method for manufacturing such a light-emitting device, for example, Patent Document 1 discloses a method that reduces the depth of field of the imaging surface, thereby blurring the image of reflected light from obstructions to the image, and clearly displaying only the subject to be photographed. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2006-177730 [Overview of the project] [Problems that the invention aims to solve]

[0004] However, in the method described in Patent Document 1, the inspection accuracy may decrease when inspecting one of two wires aligned along the depth direction.

[0005] The embodiments described herein aim to provide a method for manufacturing a light-emitting device with excellent inspection accuracy. [Means for solving the problem]

[0006] A method for manufacturing a light-emitting device according to one embodiment of the present disclosure comprises the steps of: preparing a light-emitting device comprising: a substrate having a pair of wiring portions on its upper surface; a light-emitting portion disposed on the substrate and having a pair of electrode portions on its upper surface; and a first wire and a second wire connecting the pair of wiring portions and the pair of electrode portions and being arranged adjacent to each other in a predetermined direction; and a first inspection step of inspecting the appearance of the first wire by imaging the first wire using a first camera, with the imaging direction being the direction from the first wire to the second wire in the predetermined direction, wherein the first inspection step images the first wire located within the depth of field of the first camera in the predetermined direction, with the depth of field of the first camera being in the range between a first position and a second position further from the first camera than the first position, and the second position being between the first wire and the second wire. [Effects of the Invention]

[0007] According to embodiments of this disclosure, a method for manufacturing a light-emitting device with excellent inspection accuracy can be provided. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic perspective view showing an example of the overall configuration of the light-emitting device according to the embodiment. [Figure 2] This is a schematic cross-sectional view of the line II-II in Figure 1. [Figure 3] This diagram shows an example of the relationship between the height of the first wire and the reflected light. [Figure 4] This is a schematic top view showing an example of a method for manufacturing a light-emitting device according to the first embodiment. [Figure 5] This figure shows an example of an image captured during the manufacturing process shown in Figure 4. [Figure 6] This figure shows an example of the dimensions of the first wire. [Figure 7] This figure shows an example of the virtual circle approximation result for the shape of the first wire in the captured image. [Figure 8] This figure illustrates an example of a method for determining the measurement area for the height of the first wire. [Figure 9]It is a diagram showing an example of a pass / fail determination method based on the diameter of the virtual circle on the lower surface of the first wire. [Figure 10] It is a diagram showing an example of a pass / fail determination method based on the diameter of the virtual circle on the upper surface of the first wire. [Figure 11] It is a diagram showing an example where the center of curvature of the upper virtual circle is above the first wire. [Figure 12] It is a schematic top view showing an example of a manufacturing method of a light-emitting device according to the second embodiment. [Figure 13] It is a diagram showing an example of a captured image in the manufacturing method of FIG. 12. [Figure 14] It is a schematic top view showing an example of a manufacturing method of a light-emitting device according to the third embodiment.

Mode for Carrying Out the Invention

[0009] Hereinafter, the manufacturing method of the light-emitting device of the present disclosure will be described in detail with reference to the drawings. The manufacturing method of the light-emitting device of the present disclosure is an example and is not limited to the manufacturing method of the light-emitting device described below. In the following description, terms indicating a specific direction or position (for example, "up", "down", and other terms including those terms) may be used. Those terms are merely used for ease of understanding of the relative direction and position in the referenced drawings. Also, the size and positional relationship of the components shown in the drawings may be exaggerated for ease of understanding and may not reflect the actual size of the light-emitting device or the size relationship between the components in the actual light-emitting device.

[0010] <Configuration Example of Light-Emitting Device According to Embodiment> Referring to FIGS. 1 and 2, the configuration of the light-emitting device 1 according to the embodiment will be described. FIG. 1 is a schematic perspective view showing an example of the configuration of the light-emitting device 1. FIG. 2 is a schematic cross-sectional view taken along line II-II of FIG. 1. The light-emitting device 1 includes a substrate 100 having a pair of wiring portions 11 and 12 on the upper surface, a light-emitting portion 300 disposed on the substrate 100 and having a pair of electrode portions 302 on the upper surface, and a first wire 401 and a second wire 402 that connect the pair of wiring portions 11 and 12 and the pair of electrode portions 302 and are disposed adjacent to each other in a predetermined direction.

[0011] In this embodiment, the light-emitting device 1 includes a first substrate 100 as the substrate 100, a second substrate 200, a light-emitting portion 300, a first wire 401, a second wire 402, and a wall portion 500. The light-emitting portion 300 includes a light-emitting element 301 and a pair of electrode portions 302. The light-emitting portion 300 is disposed on the second substrate 200. The pair of electrode portions 302 are disposed on the upper surface of the second substrate 200. As shown in FIGS. 1 and 2, the light-emitting portion 300 may include a light-transmissive member 303 that covers the upper surface of the light-emitting element 301. By providing the light-emitting portion 300 with the light-transmissive member 303, the light-emitting element 301 can be protected from external forces, dust, moisture, and the like.

[0012] The first substrate 100 is a member for disposing the second substrate 200. The first substrate 100 includes a first lead 11, a second lead 12 that is located away from the first lead 11, and a resin portion 15 that holds the first lead 11 and the second lead 12. The first lead 11 and the second lead 12 are arranged side by side in the Y direction. The first lead 11 includes two regions that are symmetric with respect to the center line of the first substrate 100 parallel to the Y direction in a top view. The first lead 11 corresponds to a pair of wiring portions. Note that the first substrate 100 is not limited to this form, and for example, it may be a wiring substrate having a base made of an insulating material and wirings disposed on the surface of the base. The second substrate 200 is a member for disposing the light-emitting element 301. The second substrate 200 may be included in the light-emitting portion 300. The first substrate 100 and the second substrate 200 are joined by a first joining member 201 such as silver paste.

[0013] In FIGS. 1 and 2, the second substrate 200 is disposed on the second lead 12. The light-emitting element 301 is disposed on the second substrate 200. The first wire 401 and the second wire 402 electrically connect the first lead 11 and the second substrate 200. The wall portion 500 is disposed on the outer edges of the first lead 11 and the second lead 12 and straddles the upper surfaces of the first lead 11 and the second lead 12. Also, in a top view, the light-emitting portion 300, the second substrate 200, the first wire 401, and the second wire 402 are disposed within the region surrounded by the wall portion 500.

[0014] In this embodiment, the height e of the wall portion 500 is lower than the height a of the light-emitting surface 310 of the light-emitting portion 300. The height a of the light-emitting surface 310 is lower than the height b of the highest part of the first wire 401. In this specification, the height of each portion is defined as the maximum distance in the Z direction from the lower surface of the first lead 11 or the second lead 12 to the upper surface of each portion. Alternatively, if the light-emitting device 1 is placed on a mounting substrate with a flat top surface, the height of each portion may be defined as the maximum distance in the Z direction from the upper surface of the mounting substrate to the upper surface of each portion.

[0015] In this embodiment, the wall portion 500 spans and covers the upper surfaces of the first lead 11 and the second lead 12. Therefore, the first lead 11 and the second lead 12 are held by the wall portion 500. This reduces the deformation of at least one of the first lead 11 and the second lead 12 due to heat from the light-emitting element 301, which can cause the lead and the resin portion to separate. The wall portion 500 and the resin portion 15 may be formed integrally or as separate parts.

[0016] The first wire 401 and the second wire 402 connect the first lead 11 and the pair of electrode portions 302. The first wire 401 and the second wire 402 are arranged adjacent to each other in the X direction, which is an example of a predetermined direction.

[0017] The first wire 401 and the second wire 402 may be ribbon wires having a predetermined thickness in the X direction and an elongated strip shape when viewed from above. Conductive wires may be used for the first wire 401 and the second wire 402. For example, the cross-sectional shape of the ribbon wire in the direction intersecting the wire extension direction is substantially rectangular. In this embodiment, the length of the first wire 401 and the second wire 402 in the cross-sectional shape in the direction intersecting the wire extension direction is longer in the first direction (e.g., the X direction) than in the second direction intersecting the first direction (e.g., the Z direction). For example, in the above cross-sectional shape, the length of the first wire 401 in the X direction is 0.5 mm or more and 1 mm or less, and the length of the short side is 0.05 mm or more and 0.3 mm or less. By using ribbon wires for the first wire 401, etc., the strength of the first wire 401, etc. can be improved compared to when using wires with a substantially circular cross-sectional shape in the radial direction, and the reliability of the joint between the first lead 11, etc. and the electrode portion 302 can be increased. Furthermore, because the strength of the first wire 401 etc. can be easily improved, even if the height of the first wire 401 etc. is reduced, the possibility of a part of the first wire 401 etc. sagging downwards can be reduced. This makes it easier to reduce the height of the first wire 401 etc., and makes it easier to reduce the obstruction of light from the light-emitting element 301 by the first wire 401 etc.

[0018] At least one of the first wire 401 and the second wire 402 may contain, for example, aluminum. If the first wire 401 contains aluminum, it is preferable that the outermost surface of the second substrate 200 contains aluminum. The outermost surface of the electrode portion 302, which is disposed on the surface of the second substrate 200 and connected to the first wire 401 and the second wire 402, may also contain aluminum. By having the first wire 401 and the second substrate 200 or electrode portion 302 contain the same type of metal, galvanic corrosion can be reduced, thereby improving the reliability of the light-emitting device. If the outermost surface of the second substrate 200 or electrode portion 302 contains aluminum, then if the second substrate 200 or electrode portion 302 is composed of a single layer, then it means that the layer located on the outermost surface of the second substrate 200 or electrode portion 302 contains aluminum. Similarly, if the second wire 402 contains aluminum, it is preferable that the outermost surface of the second substrate 200 or the electrode portion 302 also contains aluminum.

[0019] The light-emitting element 301 is placed on the second substrate 200. The light-emitting element 301 is electrically connected to the second substrate 200 or the electrode portion 302. The light-emitting element 301 has a first surface with at least a pair of positive and negative electrodes, a second surface located opposite to the first surface, and a third surface located between the first and second surfaces. The light-emitting element 301 may be placed on the second substrate 200 so that the first surface of the light-emitting element 301 faces the second substrate 200, or so that the second surface of the light-emitting element 301 faces the second substrate 200. It is preferable to place the light-emitting element 301 on the second substrate 200 so that the first surface of the light-emitting element 301 faces the second substrate 200. The light-emitting device 1 mainly extracts light from the light-emitting element 301 from the +Z direction. By having the first surface with positive and negative electrodes face the second substrate 200, the obstruction of light emitted from the light-emitting element in the +Z direction by the positive and negative electrodes can be reduced. This improves the light extraction efficiency of the light-emitting device 1. The surface of the light-emitting element 301 facing the second substrate 200 is sometimes called the bottom surface of the light-emitting element, and the surface located on the opposite side of the bottom surface of the light-emitting element 301 is sometimes called the top surface of the light-emitting element. The surface located between the top surface and the bottom surface of the light-emitting element is sometimes called the side surface of the light-emitting element. For example, if the light-emitting element 301 is placed on the second substrate 200 such that its first surface faces the second substrate 200, the first surface of the light-emitting element 301 is sometimes called the bottom surface of the light-emitting element 301, and the second surface of the light-emitting element 301 is sometimes called the top surface of the light-emitting element 301.

[0020] When the first surface having positive and negative electrodes faces the second substrate 200, the light-emitting element 301 and the second substrate 200 or electrode portion 302 are electrically connected by a conductive second bonding member 600 such as a metal bump or solder. When the second surface of the light-emitting element 301 faces the second substrate 200, the light-emitting element 301 may be fixed onto the second substrate 200 by a bonding member made of a resin material such as silicone resin or epoxy resin, or by a conductive bonding member containing a metal material. When the second surface of the light-emitting element 301 faces the second substrate 200, the light-emitting element 301 and the second substrate 200 or electrode portion 302 are electrically connected by a wire or the like.

[0021] The light-emitting device 1 may include a covering member 304 that covers the side surface of the light-emitting element 301. The covering member 304 has light reflectivity and reflects the light emitted by the light-emitting element 301, or it has light absorbency and absorbs the light emitted by the light-emitting element 301. The covering member 304 covers the side surface of the light-emitting element 301 so that the upper part of the light-emitting element 301 is exposed. By reflecting or absorbing the light from the light-emitting element 301 with the covering member 304, the light-emitting unit 300 can emit light with a desired light distribution angle and distribution. In addition, by covering the side surface of the light-emitting element 301 with the covering member 304, the light-emitting element 301 can be protected from external forces, dust, moisture, etc. If the light-emitting device 1 includes a protective element, it is preferable that at least a part of the protective element is covered with the covering member 304. This reduces the absorption of light from the light-emitting element 301 by the protective element.

[0022] The covering member 304 may be positioned between the lower surface of the light-emitting element 301 and the upper surface of the second substrate 200. This reduces the absorption of light from the light-emitting element 301 by the second substrate 200. Also, as shown in Figure 2, an underfill 350 may be positioned between the lower surface of the light-emitting element 301 and the upper surface of the second substrate 200. The underfill 350 is a member that absorbs stress due to the difference in thermal expansion coefficients between the light-emitting element 301 and the second substrate 200 and improves heat dissipation. The underfill 350 can also fill the gap that occurs when the light-emitting element 301 and the second substrate 200 are joined by the second joining member 600. By forming the covering member 304 and the underfill 350 from different materials, for example, if the base materials of the covering member 304 and the underfill 350 are curing resins, the viscosity of the base material of the underfill 350 before curing can be lowered compared to the viscosity of the base material of the covering member 304 before curing. This makes it easier to fill the space between the lower surface of the light-emitting element 301 and the upper surface of the second substrate 200 with underfill 350.

[0023] The light-transmitting member 303 may contain a wavelength-converting material. This makes it easier to adjust the color of the light-emitting device 1. The wavelength-converting material is a material that absorbs at least a portion of the primary light emitted by the light-emitting element and emits secondary light of a different wavelength than the primary light. By including the wavelength-converting material in the light-transmitting member 303, the light-emitting device 1 can emit color-mixed light, which is a mixture of the primary light emitted by the light-emitting element 301 and the secondary light emitted by the wavelength-converting material. For example, if a blue LED is used as the light-emitting element 301 and a phosphor such as YAG is used as the wavelength-converting material, a light-emitting device 1 can be configured to output white light obtained by mixing the blue light from the blue LED with the yellow light emitted by the phosphor excited by this blue light.

[0024] The following describes each component of the light-emitting device 1 according to the embodiment of this disclosure.

[0025] (First lead 11 and second lead 12) The first lead 11 and the second lead 12 are conductive and are components for supplying power to the light-emitting element 301. The number of leads can be two or more, and may be three or four. As the base material for the first lead 11 and the second lead 12, metals such as copper, aluminum, gold, silver, iron, nickel, or alloys thereof, phosphor bronze, or iron-containing copper can be used. These may be single layers or laminated structures (e.g., clad materials). In particular, it is preferable to use copper as the base material because it is inexpensive and has high heat dissipation properties. The first lead 11 and the second lead 12 may also have a metal layer on the surface of the base material. The metal layer may include, for example, silver, aluminum, nickel, palladium, rhodium, gold, copper, or alloys thereof. The metal layer may be provided over the entire surface of the first lead 11 and the second lead 12, or only partially. Furthermore, the metal layer may be different in the region formed on the upper surface of the lead and the region formed on the lower surface of the lead. For example, the metal layer formed on the upper surface of the reed is a multi-layered metal layer containing nickel and silver metal layers, while the metal layer formed on the lower surface of the reed is a metal layer that does not contain nickel metal layers. Furthermore, for example, the silver or other metal layer formed on the upper surface of the reed can be thicker than the silver or other metal layer formed on the lower surface of the reed.

[0026] If a silver-containing metal layer is formed on the outermost surface of the first lead 11 and the second lead 12, it is preferable to provide a protective layer such as silicon oxide on the surface of the silver-containing metal layer after connecting the first wire 401 and the second wire 402. This reduces discoloration of the silver-containing metal layer due to sulfur components in the atmosphere. The protective layer can be formed by a vacuum process such as sputtering. However, other known methods may be used to form the protective layer.

[0027] (Resin part 15) The resin part 15 is a member that holds the first lead 11 and the second lead 12. The resin part 15 can be made of materials such as thermosetting resins and thermoplastic resins. In the case of thermoplastic resins, for example, polyphthalamide resin (PPA), polybutylene terephthalate (PBT), and unsaturated polyester can be used. In the case of thermosetting resins, for example, epoxy resin, modified epoxy resin, silicone resin, and modified silicone resin can be used. The resin part 15 may contain a light-reflecting substance in the resin material. Examples of light-reflecting substances include titanium oxide, silicon oxide, zirconium oxide, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, and mullite.

[0028] (Wiring board) The first substrate 100 is not limited to a substrate including the first lead 11, the second lead 12, and the resin portion 15. For example, a wiring board having a base body and wiring arranged on the surface of the base body can be used. It is preferable that the wiring board be made of a material that does not easily transmit light emitted from the light-emitting portion 300 or ambient light, and has a certain level of mechanical strength. Specifically, the wiring board can be constructed using ceramics such as aluminum oxide, aluminum nitride, mullite, and silicon nitride, or resins such as phenolic resin, epoxy resin, polyimide resin, BT resin (bismaleimide triazine resin), and polyphthalamide as the base material.

[0029] The wiring used in the circuit board can be made of at least one of the following materials: copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or alloys thereof.

[0030] (Second substrate 200) The second substrate 200 is a component on which the light-emitting element 301 is arranged. The second substrate 200 can be made of the same material as the first substrate 100.

[0031] (light-emitting element 301) The light-emitting element 301 is a semiconductor element that emits light on its own when a voltage is applied, and known semiconductor elements made of nitride semiconductors or the like can be used. An example of a light-emitting element is an LED chip. The light-emitting element comprises at least a semiconductor structure. The semiconductor structure includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer sandwiched between the n-side semiconductor layer and the p-side semiconductor layer. The active layer may be a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers. The semiconductor structure includes multiple semiconductor layers made of nitride semiconductors. Nitride semiconductors include In x Al y Ga 1-x-y The semiconductor comprises all compositions in which the composition ratios x and y are varied within their respective ranges in the chemical formula N (0 ≤ x, 0 ≤ y, x + y ≤ 1). The emission peak wavelength of the active layer can be appropriately selected depending on the purpose. The active layer is configured to emit, for example, visible light or ultraviolet light.

[0032] A semiconductor structure may include multiple light-emitting sections, each containing an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. When a semiconductor structure includes multiple light-emitting sections, each light-emitting section may include well layers with different emission peak wavelengths, or well layers with the same emission peak wavelength. Note that "same emission peak wavelength" includes variations of a few nanometers. The combination of emission peak wavelengths of the multiple light-emitting sections can be selected as appropriate. For example, when a semiconductor structure includes two light-emitting sections, possible combinations of light emitted by each section include blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and green light, blue light and red light, or green light and red light. For example, when a semiconductor structure includes three light-emitting sections, possible combinations of light emitted by each section include blue light, green light, and red light. Each light-emitting section may include one or more well layers with emission peak wavelengths different from the other well layers.

[0033] (First wire 401, second wire 402) The first wire 401 and the second wire 402 are components that electrically connect the first lead 11 and the electrode portion 302. The materials used for the first wire 401 and the second wire 402 can be metals such as gold, silver, copper, platinum, and aluminum, or alloys thereof.

[0034] (Wall part 500) The wall portion 500 is a member that spans and covers the upper surfaces of the first lead 11 and the second lead 12. The wall portion 500 can be made of the same material as the resin portion 15.

[0035] (Covering member 304) The covering member 304 can use thermosetting resins, thermoplastic resins, etc., as the base resin material. Preferably, silicone resins and modified silicone resins, which have excellent heat resistance and light resistance, are used as the base material for the covering member 304. The covering member 304 contains a light-reflective substance or a light-absorbing substance in the base resin material. The light-reflective substance can be the same material as the light-reflective substance contained in the resin part 15. If the covering member 304 is light-absorbing, it may contain a black pigment such as carbon black.

[0036] (Underfill 350) The underfill 350 is formed in the gap between the light-emitting element 301 and the second substrate 200. The material used for the underfill 350 can be a resin material such as a thermosetting resin or a thermoplastic resin. The underfill 350 may also contain a light-reflective substance. The same light-reflective substance used in the resin portion 15 can be used for the underfill 350. The inclusion of a light-reflective substance in the underfill 350 reduces the absorption of light from the light-emitting element by the second substrate 200.

[0037] (Translucent member 303) The light-transmissive member 303 covers the upper surface of the light-emitting element and is a light-transmissive member that protects the light-emitting element. The light-transmissive member 303 may contain at least one of a wavelength conversion substance and a light diffusing material. Examples of the light-transmissive member 303 include those obtained by incorporating a wavelength conversion substance described later into a resin material, ceramics, glass, etc., or a sintered body of a wavelength conversion substance. Further, the light-transmissive member 303 may be one in which a resin layer containing a wavelength conversion substance is disposed on one surface of a molded body of resin material, ceramics, glass, etc.

[0038] (Wavelength conversion substance) The wavelength conversion substance absorbs at least a part of the primary light emitted by the light-emitting element and emits secondary light having a wavelength different from that of the primary light. Known wavelength conversion substances can be used as the wavelength conversion substance. As the wavelength conversion substance, for example, one of the following specific examples can be used alone or in combination of two or more.

[0039] Examples of the wavelength conversion substance include yttrium aluminum garnet-based phosphors (e.g., (Y,Gd)3(Al,Ga)5O[[ID=eleven]] 12 :Ce), lutetium aluminum garnet-based phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet-based phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu) and other oxynitride-based phosphors, LSN-based phosphors (e.g., (La,Y)3Si6N 11:Ce), BSESN-based phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphors (e.g., SrLiAl3N4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu), etc. nitride-based phosphors, KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn where x satisfies 0 < x < 1), or fluoride-based phosphors such as MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2), etc. can be used.

[0040] (Light diffusing material) As the light diffusing material, known members such as silicon oxide, aluminum oxide, zirconium oxide, zinc oxide, etc. can be used. The light diffusing material may be used alone with one of these, or in combination of two or more of these. In particular, silicon oxide with a small thermal expansion coefficient is preferable. Also, by using nanoparticles as the light diffusing material, the scattering of the light emitted by the light emitting device can be increased, and the usage amount of the wavelength conversion material can also be reduced. Here, the nanoparticles are particles having a particle size of 1 nm or more and 100 nm or less. Also, the "particle size" in this specification is the value defined by D50.

[0041] <Influence of reflected light by the first wire 401 and the second wire 402> When the height of the first wire 401 and the second wire 402 is greater than the light-emitting surface 310 of the light-emitting unit 300, light from the light-emitting unit 300 may irradiate the first wire 401 and the second wire 402. Also, when the inclination of the first wire 401 and the second wire 402 with respect to the light-emitting surface 310 is large, light from the light-emitting unit 300 may irradiate the first wire 401 and the second wire 402. Furthermore, reflected light from the light-emitting surface 310 by the first wire 401 and the second wire 402 may be included in the light emitted from the light-emitting device 1.

[0042] Figure 3 shows an example of the relationship between the height of the first wire 401 and the reflected light. In Figure 3, the upper section, "Side View," shows the first wire 401 as observed from the side. The lower section, "Front Brightness," corresponds to the light emitted from the light-emitting unit 300. In the "Side View," the light from the light-emitting unit 300 is emitted so as to spread at the maximum irradiation angle θ.

[0043] In the leftmost column of Figure 3, the inclination angle of the first wire 401 with respect to a plane parallel to the reference plane is φ1. The reference plane corresponds to the bottom surface of the first substrate 100. The height from the reference plane to the highest point of the first wire 401 is b1. In other words, b1 is the distance between the highest point of the first wire 401 and the reference plane on the line at the inclination angle φ1 of the first wire 401. In this case, the light from the light-emitting unit 300 is irradiated without being obstructed by the first wire 401. Irradiated light R1 is obtained on the irradiated surface. In the middle column of Figure 3, the inclination angle of the first wire 401 with respect to a plane parallel to the reference plane is φ2. The height to the highest point of the first wire 401 is b2. In other words, b2 is the distance between the highest point of the first wire 401 and the reference plane on the line at the inclination angle φ2 of the first wire 401. In this case as well, the light from the light-emitting unit 300 is irradiated without being obstructed by the first wire 401. On the irradiated surface, irradiation light R2 is obtained. In the rightmost column of Figure 3, the inclination angle of the first wire 401 with respect to a plane parallel to the reference plane is φ3. The height to the highest point of the first wire 401 is b3. In other words, the distance between the highest point of the first wire 401 and the reference plane on the line at the inclination angle φ3 of the first wire 401 is b3. In this case, a portion of the light from the light-emitting unit 300 is blocked by the first wire 401 and reflected in the reflection region 411 shown by the dashed line. On the irradiated surface, in addition to the irradiation light R3, reflected light R4 from the light-emitting unit 300 by the first wire 401 and reflected light R5 from the light-emitting unit 300 by the second wire 402 are generated.

[0044] As described above, a portion of the light from the light-emitting section 300 is reflected by the first wire 401 or the second wire 402, resulting in reflected light R4 and reflected light R5. The generation of reflected light R4 and reflected light R5 reduces the light intensity of the irradiated light R3 and degrades the quality of the irradiated light. Furthermore, if at least one of the first wire 401 and the second wire 402 is distorted, the aesthetic appearance of the first wire 401 and the second wire 402 may be impaired. In addition, if the distortion of at least one of the first wire 401 and the second wire 402 becomes large, the strength of the wire may decrease. For these reasons, the manufacturing method of the light-emitting device 1 requires ensuring the light intensity and quality of the irradiated light from the light-emitting section 300, as well as the aesthetic appearance and strength of the first wire 401 and the second wire 402. For this reason, for example, in order to detect the first wire 401 and the second wire 402 that are defective in relation to the above characteristics, a visual inspection of the first wire 401 and the second wire 402 is performed.

[0045] [First Embodiment] <Example of manufacturing method for light-emitting device 1> A method for manufacturing the light-emitting device 1 according to the first embodiment will now be described. Figure 4 is a schematic top view showing an example of a method for manufacturing the light-emitting device 1 according to the first embodiment. In the method for manufacturing the light-emitting device 1 according to this embodiment, a first camera 2 is used. The first camera 2 comprises a first lens 21 and a first image sensor 22. The first camera 2 is positioned to image a first wire 401, one end of which is connected to the electrode portion 302 and the other end to the first lead 11. The imaging direction by the first camera 2 is in the X direction, which is an example of a predetermined direction, and is the direction from the first wire 401 toward the second wire 402. The first camera 2 forms an image of the first wire 401 on the imaging surface of the first image sensor 22 using the first lens 21. The first camera 2 outputs the image of the first wire 401 captured by the first image sensor 22.

[0046] The depth of field W1 of the first camera 2 is the range from the first position S1 to the second position S2. The second position S2 is further from the first camera 2 than the first position S1. The depth of field W1 is the depth that must be in focus in the captured image when one image is captured by the first camera 2 in the manufacturing method of the light-emitting device 1. The depth W2 is the range from the third position S3 to the fourth position S4, which is the closest to the first camera 2 on the first wire 401. At the third position S3, the lower surface of the first lead 11 or the second lead 12 located at the third position S3 serves as a reference for measuring the height of the first wire 401. The first position S1 is closer to the first camera 2 than the end of the third position S3 on the first camera 2 side.

[0047] The manufacturing method of the light-emitting device 1 according to this embodiment comprises (a) a step of preparing the light-emitting device 1, and (b) a first inspection step of inspecting the appearance of the first wire 401 by imaging the first wire 401 in the X direction using the first camera 2. The first inspection step involves imaging the first wire 401 located within the depth of field W1 of the first camera 2 in the X direction, while the depth of field W1 of the first camera 2 is in the range between a first position S1 and a second position S2. The second position S2 is located between the first wire 401 and the second wire 402. In this specification, preparing the light-emitting device 1 includes not only manufacturing the light-emitting device 1 as described above, but also preparation by acquisition, including the purchase of the light-emitting device 1 as described above.

[0048] Figure 5 shows an example of an image Im in the manufacturing method of the light-emitting device 1 according to this embodiment. The image Im includes a first wire image 401a and a second wire image 402a. The first wire image 401a is an image of the first wire 401. The second wire image 402a is an image of the second wire 402. Since the first wire 401 is located within the depth of field W1 in the X direction, the first wire image 401a is an image that is almost in focus. On the other hand, the second wire 402 is located outside the depth of field W1 in the X direction. Therefore, the second wire image 402a is an out-of-focus image (a blurred image). In the manufacturing method of the light-emitting device 1 according to this embodiment, when the appearance of the first wire 401 is inspected by applying image processing to the image Im, the second wire image 402a becomes a blurred image, making it possible to distinguish and recognize the first wire image 401a and the second wire image 402a. This reduces the chance of the second wire 402 being falsely detected during the visual inspection of the first wire 401, thereby improving the accuracy and yield of the visual inspection. As a result, a manufacturing method for the light-emitting device 1 with superior inspection accuracy can be provided. Furthermore, because the first position S1 in Figure 4 is closer to the first camera 2 than the end of the third position S3 on the first camera 2 side, a predetermined reference plane including the third position S3 can be included in the captured image Im of the first wire 401 in focus. As a result, the state of the first wire 401 relative to the predetermined reference plane can be inspected. In the following description, the first wire image 401a may be simply referred to as the first wire 401, and the second wire image 402a may be simply referred to as the second wire 402.

[0049] Figure 6 shows an example of the dimensions of the first wire 401. In Figure 6, let a be the height from the reference plane 410 to the light-emitting surface 310. Let b be the height of the highest point T of the first wire 401 relative to the predetermined reference plane 410. In the Y direction, which is perpendicular to the Z direction corresponding to the height direction, let c be the length from the center of the light-emitting surface 310 to the highest point T of the first wire 401. Let L be the length of the first wire 401 in the Y direction. Let φ be the inclination angle of the linear portion U of the first wire 401 relative to the reference plane 410. The linear portion U refers to the portion of the first wire 401 located on the light-emitting part 300 side of point T. Let θ be the maximum irradiation angle of the light-emitting part 300. The maximum irradiation angle θ is the angle between the line connecting the center position P1 of the light-emitting surface 310 and the central illuminance position P2 on the irradiation surface S, and the line connecting the center position P1 of the light-emitting surface 310 and the 1 / 10 illuminance position P3 on the irradiation surface S. The 1 / 10 illuminance position P3 is the position where the illuminance is 1 / 10 of the illuminance at the central illuminance position P2. The maximum irradiation angle θ can be measured as the tilt angle of the light-emitting surface 310 when the output of the illuminance sensor becomes 1 / 10 of the illuminance at the central illuminance position P2, while the light-emitting surface 310 is tilted with the illuminance sensor placed at the central illuminance position P2 of the irradiation surface S. In the above case, the height b may be expressed by the following equation (1). b <a+c×tan{(π-θ) / 2} ··· (1)

[0050] By satisfying equation (1), the reflection of light from the light-emitting surface 310 by the first wire 401 is reduced, and the inspection accuracy of the first wire 401 can be improved. In addition, the decrease in light intensity and the deterioration of the quality of the light emitted from the light-emitting unit 300 can be reduced. Furthermore, the inclination angle φ may be 40° or less. This reduces the reflection of light from the light-emitting surface 310 by the first wire 401, as described above, and improves the inspection accuracy of the first wire 401. In addition, the decrease in light intensity and the deterioration of the quality of the light emitted from the light-emitting unit 300 can be reduced.

[0051] Furthermore, it is preferable that the apex T of the wire is located lower in the height direction than the line connecting the center position P1 of the light-emitting surface 310 and the 1 / 10 illuminance position P3 on the irradiation surface S. This reduces the amount of light emitted from the light-emitting section 300 that irradiates the first wire 401, thereby reducing the influence of reflected light from the first wire 401.

[0052] (Image processing method) In the manufacturing method of the light-emitting device 1 according to this embodiment, the first inspection step is performed by processing the image captured by the first camera 2 shown in Figure 4 using an information processing device such as a PC (Personal Computer).

[0053] The first inspection step includes a step of inspecting the height and angle of the first wire 401. In Figure 6, the first inspection step performs image processing on the image captured by the first camera 2 to extract the first wire 401 and the reference plane 410. This extraction process can use binarization, edge detection, etc. The first inspection step uses the extracted first wire 401 and reference plane 410 to count the number of pixels included in the height direction from the position of the reference plane 410 to the position of the highest vertex T of the first wire 401. The first inspection step can calculate the height b by multiplying the counted number of pixels by a coefficient representing the length per pixel, which has been specified in advance. The first inspection step can also use the first wire 401 and reference plane 410 extracted from the image to calculate the slope of the approximate straight line of the linear portion U and the slope of the approximate straight line of the reference plane 410, respectively, and calculate the slope angle φ corresponding to the difference between these two slopes. The first inspection step determines that the product is unsatisfactory if, for example, the height b does not satisfy the above-mentioned formula (1). The first inspection step also determines that the product is unsatisfactory if, for example, the inclination angle φ is not 40° or less. Note that the method for calculating the height and angle of the first wire 401 using image processing is not limited to the above-mentioned method and can be selected as appropriate.

[0054] The first inspection step may include a distortion determination step. The distortion determination step includes the steps of: calculating a virtual circle approximated by the shape of the first wire 401 in the image captured by the first camera 2 in Figure 4; and determining that the device is unsatisfactory if either the diameter of the virtual circle exceeds a predetermined threshold, or the position of the center of curvature of the virtual circle is higher than the position of the highest part of the first wire 401. Figure 7 shows an example of the virtual circle approximation result of the shape of the first wire 401 in the captured image Im. In Figure 7, the lower virtual circle C1 is the result of approximating the lower surface of the first wire 401 with a circle. The upper virtual circle C2 is the result of approximating the upper surface of the first wire 401 with a circle. The lower virtual circle C1 and the upper virtual circle C2 are generated based on the edges corresponding to the upper and lower surfaces of the first wire 401 detected from the captured image Im.

[0055] For example, when an external stress is applied to the first wire 401, the first wire 401 approaches flatness, and the radii of curvature of the lower virtual circle C1 and the upper virtual circle C2 increase. The lower virtual circle C1 and the upper virtual circle C2 are examples of virtual circles. Therefore, the first inspection process determines that stress is being applied to the first wire 401 when the radius of curvature exceeds a predetermined threshold, and determines that the first wire 401 is unacceptable. In addition, when the external stress increases, the center of curvature of the first wire 401 may be located above the first wire 401. In other words, the center of curvature of the first wire 401 may be higher than the position of the highest point of the first wire 401. In such cases, the first inspection process can also determine that the first wire 401 is unacceptable. As a result, the first inspection process can inspect the strain of the first wire.

[0056] Figure 8 illustrates an example of a method for determining the height measurement area of ​​the first wire 401. In Figure 8, first, in order to determine the height measurement area of ​​the first wire 401, the first inspection step detects the following three positions. The first inspection step determines the measurement area from the coordinates in the captured images of each of the detected rising position d1, highest position d2, and falling position d3. (1) The starting position d1 in the first wire 401 where the loop shape begins to rise. (2) The highest position d2 on the first wire 401 (3) The falling position d3 in the first wire 401 where the loop shape begins to fall.

[0057] Figure 9 shows an example of a pass / fail determination method based on the diameter of the virtual circle C1 on the lower surface of the first wire 401. Figure 10 shows an example of a pass / fail determination method based on the diameter of the virtual circle C2 on the upper surface of the first wire 401. In Figures 9 and 10, the measurement area E is the area determined by the measurement area determination method shown in Figure 8. The first inspection step uses the coordinates of the rising position d1, the highest position d2, and the falling position d3 in the measurement area E to detect the radius of curvature of the virtual circle C1 on the lower surface and the radius of curvature of the virtual circle C2 on the upper surface, respectively. The first inspection step can determine that the wire is unsuccessful if either the radius of curvature of the virtual circle C1 on the lower surface or the radius of curvature of the virtual circle C2 on the upper surface exceeds a predetermined threshold.

[0058] Figure 11 shows an example where the center of curvature of the upper virtual circle C2 is above the first wire 401. In the first inspection step, if the center of curvature of the upper virtual circle C2 is located above the highest position d2 of the first wire 401, the sign of the radius of curvature of the upper virtual circle C2 is reversed and it is determined to be a failure. For example, if the degree of strain of the first wire 401 is large, the center of curvature of the upper virtual circle C2 will be located above the highest position d2 of the first wire 401. In this case, the first inspection step can reverse the sign of the radius of curvature of the upper virtual circle C2 from 3000 μm to -3000 μm.

[0059] [Second Embodiment] A method for manufacturing the light-emitting device 1 according to the second embodiment will now be described. Note that names and reference numerals identical to those in the first embodiment indicate the same or identical components, and detailed explanations will be omitted as appropriate. This also applies to the embodiments described later.

[0060] Figure 12 is a schematic top view showing an example of a method for manufacturing the light-emitting device 1 according to the second embodiment. In the method for manufacturing the light-emitting device 1 according to this embodiment, the illumination light source 3 is positioned on the opposite side of the first camera 2, with the first wire 401 and the second wire 402 in between. The illumination light source 3 irradiates the first light BR1 in the direction from the second wire 402 toward the first wire 401. The first inspection step is to image the first wire 401 in the X direction while the first light BR1 is irradiated. The first inspection step is to perform so-called backlight illumination, which illuminates the first wire 401 from the back side.

[0061] Figure 13 shows an example of an image Im captured in the manufacturing method of the light-emitting device 1 according to this embodiment. By irradiating with the first light BR1, as shown in Figure 13, the contour of the second wire 402 can be made particularly brighter due to the diffraction phenomenon of light compared to when the first wire 401 is illuminated from the front side. The first inspection step applies contrast-enhanced image processing to the image Im captured using the first light BR1, thereby making the pixel brightness of the first wire 401 higher than the pixel brightness of the second wire 402 in the image Im. As a result, the first wire and the second wire can be further distinguished by the difference in brightness in the image captured by the first camera.

[0062] The first light BR1 may have an emission peak wavelength in the range of 450 nm to 495 nm. This is because, compared to the case where the wavelength of the first light BR1 is longer, the diffraction angle of the light becomes smaller, which can darken the image of the first wire 401 in particular, making it easier to distinguish between the first wire 401 and the second wire 402 in the image Im captured by the first camera 2 based on the difference in their brightness. However, this is not limited to this, and the first light BR1 can be selected as appropriate.

[0063] The luminance difference between the first wire 401 and the second wire 402 in the captured image Im, that is, the luminance difference between the first wire image 401a and the second wire image 402a, may be 24% or more of the maximum luminance value of the pixels in the first camera 2. If the first camera 2 is an 8-bit camera, the maximum luminance value is 255 gradations, so the luminance difference between the first wire 401 and the second wire 402 in the captured image Im may be 61 gradations or more. Under these conditions, when performing image processing on the captured image Im to perform a visual inspection of the first wire 401, the first wire and the second wire become easier to distinguish by their luminance difference in the image captured by the first camera. As a result, false detection of the second wire 402 can be reduced, improving the accuracy and yield of the visual inspection. The luminance difference between the first wire image 401a and the second wire image 402a may be the difference between the average luminance value of all pixels constituting the first wire image 401a and the average luminance value of all pixels constituting the second wire image 402a. Furthermore, the difference in brightness between the first wireframe image 401a and the second wireframe image 402a may be the difference between the maximum brightness value of all pixels constituting the first wireframe image 401a and the maximum brightness value of all pixels constituting the second wireframe image 402a. Other characteristic values ​​may also be used as appropriate.

[0064] In Figure 13, image region 403 is the image region in the captured image Im other than the first wire 401 and the second wire 402. Preferably, image region 403 does not include images of other components other than the first wire 401 and the second wire 402. The brightness of the image region in the captured image Im other than the first wire 401 and the second wire 402 may be 78% or more and 86% or less of the maximum brightness value of the pixels in the first camera 2. For example, if the first camera 2 is an 8-bit camera, the brightness of the image region other than the first wire 401 and the second wire 402 may be 198 to 219 gradations. Under these conditions, when performing image processing on the captured image Im to perform a visual inspection of the first wire 401, the first wire and the second wire can be easily distinguished by the difference in brightness in the captured image Im from the first camera 2. As a result, false detection of the second wire 402 can be reduced, and the accuracy and yield of the visual inspection can be improved. The brightness of the image region 403 other than the first wire 401 and the second wire 402 can be appropriately selected from the average brightness, maximum brightness, etc.

[0065] [Third Embodiment] A method for manufacturing the light-emitting device 1 according to the third embodiment will now be described. In the method for manufacturing the light-emitting device 1 according to this embodiment, a second camera 4 is further used. The second camera 4 includes a second lens 41 and a second image sensor 42. The second camera 4 is positioned to capture at least a second wire 402, one end of which is connected to the electrode portion 302 and the other end to the first lead 11. The second camera 4 uses the second lens 41 to form an image of the second wire 402 on the imaging surface of the second image sensor 42. The second camera 4 outputs the image captured by the second image sensor 42. Depth of field W3 is the depth of field of the second camera 4. Depth of field W3 is in the range from the fifth position S5 to the sixth position S6. The sixth position S6 is a position further from the second camera 4 than the fifth position S5.

[0066] The manufacturing method of the light-emitting device 1 according to this embodiment includes a second inspection step in which the appearance of the second wire 402 is inspected by imaging the second wire 402 using the second camera 4, with the imaging direction being the direction from the second wire 402 to the first wire 401 in the X direction. In the second inspection step, the second wire 402 is imaged within the depth of field of the second camera 4, with the depth of field W3 of the second camera 4 being in the range between a fifth position S5 and a sixth position S6 which is further from the second camera 4 than the fifth position S5. Either the fifth position S5 or the sixth position S6 is located between the first wire 401 and the second wire 402. In the second inspection step, since the first wire 401 is located outside the depth of field W3 of the second camera 4, the influence of the first wire 401 on the image captured by the second camera 4 can be reduced, and the inspection accuracy of the second wire 402 can be increased. As a result, it is possible to provide a method for manufacturing a light-emitting device 1 with excellent inspection accuracy.

[0067] In the second inspection step, the second wire 402 may be imaged while the second light BR2 is irradiated in the direction from the first wire 401 to the second wire 402 in the X direction. By using backlight illumination that illuminates the back side of the second wire 402, the image of the first wire 401 can be made particularly brighter due to the diffraction phenomenon of light compared to when the second wire 402 is illuminated from the front side. As a result, it is possible to further distinguish between the second wire 402 and the first wire 401, and a manufacturing method for the light-emitting device 1 with excellent inspection accuracy can be provided.

[0068] Although preferred embodiments have been described in detail above, the invention is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims.

[0069] The ordinal numbers, quantities, and other figures used in the description of the embodiments are all illustrative to specifically illustrate the technology of this disclosure, and this disclosure is not limited to the illustrative figures. Furthermore, the connection relationships between the components are illustrative to specifically illustrate the technology of this disclosure, and are not limited to the connection relationships that realize the functions of this disclosure.

[0070] An embodiment of the light-emitting device described herein can be used in vehicle headlights, backlight devices for liquid crystal displays, various lighting fixtures, large displays, various display devices such as advertisements and destination guidance devices, projector devices, and even image reading devices in digital video cameras, facsimile machines, copiers, scanners, etc.

[0071] The aspects of this disclosure are, for example, as follows: <Item 1> A method for manufacturing a light-emitting device comprising: a step of preparing a light-emitting device comprising a substrate having a pair of wiring portions on its upper surface; a light-emitting portion disposed on the substrate and having a pair of electrode portions on its upper surface; and a first wire and a second wire connecting the pair of wiring portions and the pair of electrode portions and being arranged adjacent to each other in a predetermined direction; and a first inspection step of inspecting the appearance of the first wire by imaging the first wire using a first camera, wherein the imaging direction is set to the direction from the first wire to the second wire in the predetermined direction, and the first inspection step is to image the first wire located within the depth of field of the first camera in the predetermined direction, with the depth of field of the first camera being in the range between a first position and a second position further from the first camera than the first position, and the second position being between the first wire and the second wire. <Item 2> The light-emitting device is a reference for measuring the height of the first wire and has a reference position whose end is located closer to the first camera than the first wire, and the first position is closer to the first camera than the end of the reference position on the first camera side, the method for manufacturing the light-emitting device described in <Item 1>. <Item 3> The first inspection step is a method for manufacturing the light-emitting device described in <Item 1> or <Item 2>, wherein the first light is irradiated in the predetermined direction from the second wire toward the first wire and the first light is imaged. <Item 4> The method for manufacturing the light-emitting apparatus described in <Item 3> is wherein the first light is light having an emission peak wavelength in the range of 450 nm to 495 nm. <Item 5> The method for manufacturing the light-emitting device described in <Item 3>, wherein the difference in brightness between the first wire and the second wire in the image captured by the first camera is 24% or more of the maximum brightness value of the pixel in the first camera. <Item 6> The manufacturing method of the light-emitting device according to <Item 5>, wherein the brightness of the image region other than the first wire and the second wire in the captured image is 78% or more and 86% or less of the maximum brightness value of the pixels in the first camera. <Section 7> When the height from the reference plane to the light-emitting surface of the light-emitting unit is a, the height of the highest part of the first wire relative to the reference plane is b, the length from the center of the light-emitting surface of the light-emitting unit to the highest part of the first wire in a direction perpendicular to the height direction is c, and the maximum irradiation angle of the light-emitting unit is θ, the height b to the highest part of the first wire is expressed by the following formula: b <a+c×tan{(π-θ) / 2} This is a method for manufacturing a light-emitting device as described in any one of the above items 1 to 6. <Item 8> A method for manufacturing a light-emitting device according to any one of <Item 1> to <Item 7>, wherein the inclination angle of the first wire with respect to the reference plane is 40° or less. <Clause 9> The method for manufacturing a light-emitting device according to any one of <Clause 1> to <Clause 8>, wherein the first inspection step comprises a distortion determination step, the distortion determination step comprising the steps of calculating a virtual circle approximating a circle from the shape of the first wire in an image captured by the first camera, and determining that the device is unsatisfactory if either the diameter of the virtual circle exceeds a predetermined threshold, or the position of the center of curvature of the virtual circle is higher than the position of the highest part of the first wire. <Item 10> The method for manufacturing a light-emitting device according to any one of <Item 1> to <Item 9>, wherein the highest part of the first wire is located higher than the light-emitting surface of the light-emitting part. <Item 11> The method for manufacturing a light-emitting device according to any one of <Item 1> to <Item 10>, wherein the first wire and the second wire are ribbon wires having a predetermined thickness in the predetermined direction. <Item 12> A method for manufacturing a light-emitting device according to any one of <Item 1> to <Item 11>, further comprising a second inspection step of inspecting the appearance of the second wire by imaging the second wire using a second camera with the imaging direction being the direction from the second wire toward the first wire in the predetermined direction, wherein the second inspection step involves imaging the second wire located within the depth of field of the second camera in the predetermined direction, such that the depth of field of the second camera is in the range between a third position and a fourth position further away from the second camera than the third position, and either the third position or the fourth position is located between the first wire and the second wire. <Item 13> The second inspection step is a method for manufacturing the light-emitting device described in <Item 12>, wherein the second wire is imaged while the second light is irradiated in the direction from the first wire toward the second wire in the predetermined direction. [Explanation of symbols]

[0072] 1. Light-emitting device 11. First Lead 12. Second lead 15 Resin part 2. Camera 1 2 21 First Lens 22 First image sensor 3 Light source 4. Second camera 41. Second lens 42 Second image sensor 100 First board 200 Second board 201 First Joining Member 300 Light-emitting part 301 Light-emitting element 302 Electrode section 303 Translucent material 304 Covering member 310 Light-emitting surface 401 First wire 401a First wire image 402 Second wire 402a Second wire image 411 Reflection area 500 wall 600 Second Joining Member a, b, e, b1, b2, b3 Height BR1 First Light BR2 Second Light c, L length C1 Lower virtual circle C2 Top surface virtual circle d1 Rising position d2 highest position d3 Falling point E Measurement area Im captured image P1 center position P2 Center illuminance position P3 1 / 10 illuminance position R1, R2, R3 irradiation light R4, R5 reflected light S Irradiation surface S1 1st position S2 2nd position S3 3rd position S4 4th position S5 5th position S6 6th position T vertex U Linear part W1, W3 depth of field W2 depth θ Maximum beam angle φ, φ1, φ2 Tilt angle

Claims

1. A circuit board having a pair of wiring sections on its upper surface, A light-emitting unit is placed on the substrate and has a pair of electrode portions on its upper surface, A step of preparing a light-emitting device comprising a first wire and a second wire that connect the pair of wiring sections and the pair of electrode sections and are arranged adjacent to each other in a predetermined direction, The system includes a first inspection step in which, in the predetermined direction, the direction from the first wire toward the second wire is set as the imaging direction, and the appearance of the first wire is inspected by imaging the first wire using a first camera, The first inspection step involves imaging the first wire located within the depth of field of the first camera in the predetermined direction, such that the depth of field of the first camera is in the range between a first position and a second position further from the first camera than the first position. A method for manufacturing a light-emitting device, wherein the second position is located between the first wire and the second wire.

2. The light-emitting device serves as a reference for measuring the height of the first wire and has a reference position where its end is located closer to the first camera than the first wire. The method for manufacturing a light-emitting device according to claim 1, wherein the first position is closer to the first camera than the end of the reference position on the first camera side.

3. The method for manufacturing a light-emitting device according to claim 1 or claim 2, wherein the first inspection step involves imaging the first wire while the first light is irradiated in the predetermined direction from the second wire toward the first wire.

4. The method for manufacturing a light-emitting apparatus according to claim 3, wherein the first light is light having an emission peak wavelength in the range of 450 nm to 495 nm.

5. The method for manufacturing a light-emitting device according to claim 3, wherein the difference in brightness between the first wire and the second wire in the image captured by the first camera is 24% or more of the maximum brightness value of the pixel in the first camera.

6. The method for manufacturing a light-emitting device according to claim 5, wherein the brightness of the image region other than the first wire and the second wire in the captured image is 78% or more and 86% or less of the maximum brightness value of the pixels in the first camera.

7. When the height from the reference plane to the light-emitting surface of the light-emitting unit is a, the height of the highest part of the first wire relative to the reference plane is b, the length from the center of the light-emitting surface of the light-emitting unit to the highest part of the first wire in a direction perpendicular to the height direction is c, and the maximum irradiation angle of the light-emitting unit is θ, the height b to the highest part of the first wire is expressed by the following formula: b<a+c×tan {(π-θ) / 2} A method for manufacturing a light-emitting device according to claim 1 or claim 2.

8. The method for manufacturing a light-emitting device according to claim 1 or claim 2, wherein the inclination angle of the first wire with respect to the reference plane is 40° or less.

9. The first inspection step is, Equipped with a distortion detection process, The aforementioned strain determination process is: The process of calculating a virtual circle approximating a circle from the shape of the first wire in the image captured by the first camera, The process includes determining that the product is unacceptable if either the diameter of the virtual circle exceeds a predetermined threshold, or the position of the center of curvature of the virtual circle is higher than the position of the highest part of the first wire. A method for manufacturing a light-emitting device according to claim 1 or claim 2.

10. The method for manufacturing a light-emitting device according to claim 1 or claim 2, wherein the highest part of the first wire is located higher than the light-emitting surface of the light-emitting part.

11. The method for manufacturing a light-emitting device according to claim 1 or claim 2, wherein the first wire and the second wire are ribbon wires having a predetermined thickness in the predetermined direction.

12. The system further includes a second inspection step in which the appearance of the second wire is inspected by imaging the second wire using a second camera, with the imaging direction being the direction from the second wire toward the first wire in the predetermined direction. The second inspection step involves imaging the second wire located within the depth of field of the second camera in the predetermined direction, such that the depth of field of the second camera is in the range between the third position and the fourth position which is further from the second camera than the third position. The method for manufacturing a light-emitting device according to claim 1 or claim 2, wherein the fourth position is located between the first wire and the second wire.

13. The method for manufacturing a light-emitting device according to claim 12, wherein the second inspection step involves imaging the second wire while the second light is irradiated in the direction from the first wire toward the second wire in the predetermined direction.

Images