PVD source tilted relative to a rotating pedestal

Abstract

Apparatus and methods are presented herein for improving film uniformity in physical vapor deposition (PVD) processes. In some embodiments, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber, the pedestal having an upper surface configured to support a substrate thereon, a first motor coupled to the pedestal, a lid assembly having a first target, a first magnetron disposed above a portion of the first target within a region of the lid assembly maintained at atmospheric pressure, a first actuator configured to translate the first magnetron in a first direction, a second actuator configured to translate the first magnetron in a second direction, and a system controller configured to cause the first actuator and the second actuator to simultaneously translate the first magnetron, thereby translating the first magnetron along at least a portion of a first path.

Description

Background Art

[0001] Technical Field

[0001] Embodiments of the present disclosure generally relate to physical vapor deposition (PVD) film formation on a substrate in an electronic device manufacturing process, and more particularly, to an apparatus and method for improving film uniformity while using a small cathode design.

[0002] Description of Related Art

[0002] Recent electronic device manufacturing processes often involve the use of physical vapor deposition (PVD) or sputtering processes in a dedicated PVD chamber. The material source to be sputtered can be a planar or rotating sputtering target formed from a pure metal, alloy, or ceramic material. A magnet array (typically located within an assembly and often referred to as a magnetron) is used to generate a magnetic field near the target. During processing, a high voltage is applied to the target to generate plasma and enable the sputtering process. The voltage source is negatively biased, so the target may also be referred to as a "cathode". The high voltage generates an electric field inside the PVD chamber. This electric field enables sputtering of the target material and is used to generate and emit electrons from the target, which are used to generate and retain plasma near the underside of the target. The magnet array applies an external magnetic field, which traps electrons and confines the plasma near the target. The captured electrons then collide with gas atoms within the processing area of ​​the PVD chamber, potentially ionizing these gas atoms. The collision between the captured electrons and gas atoms causes the gas atoms to release electrons, which are used to maintain and further increase the plasma density within the processing area of ​​the PVD chamber. The plasma may contain argon atoms, positively charged argon ions, free electrons, and ionized metal and neutral metal atoms sputtered from the target. Argon ions are accelerated toward the target by a negative bias, colliding with the target surface and ejecting atoms of the target material from the target surface. The ejected target material atoms then travel toward the substrate and the chamber shield, where they are incorporated into the growing thin film on these surfaces.

[0003]

[0003] Controlling film uniformity while performing PVD sputtering is particularly difficult when processing large-area substrates (such as panels). As used in this document, the term "panel" may refer to a large-area substrate with a large surface area. For example, a typical panel size may be 600 mm x 600 mm. In some packaging applications, typical panel materials may include polymer materials (e.g., Ajinomoto build-up film (ABF), copper-clad laminate (CCL), polymer-on-a-panel, glass, or other similar materials).

[0004]

[0004] PVD film formation on large-area substrates can be performed using either a planar or rotating target, as described above. In either case, the length of the target size can exceed 800 mm, and in some cases exceed 1,000 mm. In other words, the target size can exceed the size of the substrate being processed by about 20% to about 40%. The need for such large-area targets presents particular challenges to the PVD sputtering process. For example, if it is a precious metal, the amount of raw materials required to manufacture such a large-area target is very expensive. On the other hand, large-area monolithic targets formed from relatively brittle materials (such as silicon) are difficult and costly to manufacture because they are prone to cracking and breakage. In addition, large-area targets have a relatively low power density. Therefore, very high power consumption is required to achieve a suitable deposition rate. In addition, conventional PVD chambers are sized to accommodate only one large-area target at a time, which reduces the throughput compared to the throughput that can be achieved when multiple targets are placed in the process chamber. The presence of multiple targets within the chamber can potentially enable the formation of multiple materials with high purity and different compositions. However, the presence of multiple targets within the processing chamber often necessitates positioning each target on only a portion of the substrate surface so that each target has similar film-forming capabilities across the entire surface, resulting in the problem of uneven deposition.

[0005]

[0005] Therefore, in the art, there is a need for apparatus and methods for improving the uniformity of film deposition while using a small cathode and chamber design. [Overview of the Initiative]

[0006]

[0006] The embodiments described herein generally relate to the formation of physical vapor deposition (PVD) films on substrates in electronic device manufacturing processes. More specifically, the embodiments described herein provide apparatus and methods for improving film uniformity while using a compact cathode design.

[0007]

[0007] In one embodiment, the PVD chamber includes a pedestal disposed within the processing area of ​​the PVD chamber, having a top surface configured to support a substrate on top of it; a first motor connected to the pedestal, configured to rotate the pedestal about a first axis perpendicular to at least a portion of the top surface of the pedestal; and a lid assembly housing a first target. The surface of the first target defines a portion of the processing area and contains the first target material. The surface area of ​​the top surface of the pedestal is greater than the surface area of ​​the first target. The surface of the first target is inclined at a first angle with respect to the plane of the top surface of the pedestal. The first target comprises one or more cooling channels configured to receive a coolant passing through them to cool the first target. The PVD chamber includes a first magnetron positioned above a portion of a first target within a region maintained at atmospheric pressure in the lid assembly; a first actuator configured to translate the first magnetron in a first direction; a second actuator configured to translate the first magnetron in a second direction substantially perpendicular to the first direction, wherein the process of translating the first magnetron by the second actuator includes rotating the first magnetron about a second axis; and a system controller configured to translate the first magnetron along at least a portion of a first path by simultaneously translating the first magnetron with the first and second actuators.

[0008]

[0008] Embodiments of the present disclosure may include a physical vapor deposition (PVD) chamber, which includes a pedestal disposed within the processing area of ​​the PVD chamber and having an upper surface configured to support a substrate on it; a first motor connected to the pedestal; a lid assembly having a first target; a first magnetron disposed on a portion of the first target in a region of the lid assembly maintained at atmospheric pressure; a first actuator configured to move the first magnetron in a first direction, wherein moving the first magnetron by the first actuator includes rotating the first magnetron about a second axis; a second actuator configured to move the first magnetron in a second direction; and a system controller configured to move the first magnetron along at least a portion of a first path by simultaneously moving the first magnetron with the first actuator and the second actuator. The first motor is configured to rotate the pedestal about a first axis perpendicular to at least a portion of the upper surface of the pedestal. The lid assembly includes a first target, the surface of which defines a portion of the processing area and contains the first target material, the surface area of ​​the upper surface of the pedestal is greater than the surface area of ​​the first target, and the surface of the first target is inclined at a first angle with respect to the plane of the upper surface of the pedestal.

[0009]

[0009] Embodiments of the present disclosure may further include a physical vapor deposition (PVD) chamber, the PVD chamber comprising: a pedestal disposed within the processing area of ​​the PVD chamber and having a top surface configured to support a substrate on it; a first motor connected to the pedestal and configured to rotate the pedestal about a first axis perpendicular to at least a portion of the top surface of the pedestal; a lid assembly comprising a first target; a first magnetron disposed on a portion of the first target within a region of the lid assembly maintained at atmospheric pressure; a first actuator configured to translate the first magnetron in a first direction; and a computer-readable medium storing instructions, which, when executed by the system's processor, cause the system to simultaneously perform the first motor to rotate the pedestal about the first axis and the first actuator to translate the first magnetron in a first direction. The surface of the first target defines a portion of the processing area. The first target comprises a first target material. The surface of the first target is inclined at a first angle with respect to the plane of the top surface of the pedestal.

[0010]

[0010] Embodiments of the present disclosure may further include a processing system which includes a transfer chamber and a physical vapor deposition (PVD) chamber connected to the transfer chamber. The PVD chamber includes: a pedestal disposed within the processing area of ​​the PVD chamber and having an upper surface configured to support a substrate on top of it; a first motor connected to the pedestal and configured to rotate the pedestal about a first axis perpendicular to at least a portion of the upper surface of the pedestal; a lid assembly having a first target; a first magnetron disposed on a portion of the first target within a region of the lid assembly maintained at atmospheric pressure; a first actuator configured to translate the first magnetron in a first direction; a second actuator configured to translate the first magnetron, wherein translating the first magnetron by the second actuator includes rotating the first magnetron about a second axis; and a system controller configured to translate the first magnetron along at least a portion of a first path by simultaneously translating the first magnetron with the first and second actuators. The lid assembly includes a first target, the surface of which defines a portion of the processing area and includes the first target material, the surface area of ​​the upper surface of the pedestal is greater than the surface area of ​​the first target, the surface of the first target is inclined at a first angle with respect to the plane of the upper surface of the pedestal, and the first target comprises one or more cooling channels configured to receive a coolant passing through them to cool the first target.

[0011]

[0011] A more detailed description of the Disclosure, which has been briefly summarized above, can be obtained by referring to embodiments, so that the above-mentioned features of the Disclosure may be understood in more detail. Some embodiments are shown in the accompanying drawings. However, it should be noted that the accompanying drawings are merely illustrative of typical embodiments of the Disclosure and should not be considered to limit the scope of the Disclosure, as the Disclosure may also permit other equally valid embodiments. [Brief explanation of the drawing]

[0012] [Figure 1] This is a schematic top view of an exemplary substrate processing system according to a certain embodiment. [Figure 2A] This is a side cross-sectional view of a PVD chamber that may be used in the substrate processing system shown in Figure 1, according to a certain embodiment. [Figure 2B] This is an enlarged cross-sectional view of a portion of the PVD chamber shown in Figure 2A, according to one particular embodiment. [Figure 2C] This is a top view of a portion of Figure 2A, illustrating a certain embodiment, with the target and substrate superimposed. [Figure 2D] This is a top view of a portion of Figure 2A, illustrating a certain embodiment, in which the magnetron and target are superimposed. [Figure 3A] This is a side cross-sectional view of another PVD chamber that may be used in the substrate processing system of Figure 1 according to certain embodiments. [Figure 3B] This is a schematic top view of the PVD chamber shown in Figure 3A, according to one particular embodiment. [Figure 4] This figure shows a method for processing a substrate using a PVD chamber according to a certain embodiment. [Modes for carrying out the invention]

[0013]

[0020] For ease of understanding, the same reference numerals have been used to indicate identical elements common to multiple figures, where possible. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0014]

[0021] The embodiments of the disclosure presented herein generally relate to physical vapor deposition (PVD) of thin films on substrates in electronic device manufacturing processes. More specifically, the embodiments described herein provide apparatus and methods for improving the uniformity of film deposition when using small targets (or, as may be referred to herein, small cathodes, cathodes, or targets). In some embodiments, the apparatus may include a substrate support element configured to rotate the substrate during processing to improve film uniformity when using small targets, and the small targets reduce the cost of targets compared to the large-area targets described above. The embodiments of the disclosure presented herein may provide targets that are inclined with respect to the substrate being processed to improve film uniformity. The embodiments of the disclosure presented herein may further enable co-sputtering by using two or more cathodes simultaneously. Using two or more cathodes simultaneously may improve throughput and allow for adjustment of the composition of the deposited film compared to using a single cathode. The embodiments of the present disclosure presented herein may further allow the magnetron to be vibrated in two nearly perpendicular directions to extend the magnetic field across the entire sputtering area of ​​the target in order to achieve full-surface erosion. Typically, vibration helps in controlling defects (such as particle or arc generation) and extends the life of the target compared to a fixed magnet where only specific areas of the target are eroded. The embodiments of the present disclosure presented herein may further allow the magnetron to be scanned along one or more paths across the entire back surface of the target, thereby allowing control over the uniformity of the deposited film. For example, the magnetron scan may be adjusted to compensate for variations in film thickness across different areas of the substrate during the deposition process.

[0015] Exemplary substrate processing system

[0022] Figure 1 is a schematic top view of an exemplary substrate processing system 100 (also referred to as a “processing platform”) according to a certain embodiment. In certain embodiments, the substrate processing system 100 is specifically configured to process large-area substrates (such as the panels described above). As will be described in detail later, the substrate processing system 100 generally includes an equipment front-end module (EFEM) 102 for loading substrates into the processing system 100, a first load lock chamber 104 connected to the EFEM 102, a transfer chamber 106 connected to the first load lock chamber 104, and a plurality of other chambers connected to the transfer chamber 106. The EFEM 102 generally includes one or more robots 105. One or more robots 105 are configured to transfer substrates from the FOUP 103 to at least one of the first load lock chamber 104 or the second load lock chamber 120. The processing system 100 includes a first degassing chamber 108, a first pre-washing chamber 110, a first deposit chamber 112, a second pre-washing chamber 114, a second deposit chamber 116, a second degassing chamber 118, and a second load lock chamber 120, arranged counterclockwise around the transfer chamber 106 from the first load lock chamber 104. In certain embodiments, the transfer chamber 106 and each chamber connected to the transfer chamber 106 are maintained under vacuum. As used herein, the term "vacuum" may mean a pressure of less than 760 Torr, and the chambers are typically 10 -5 Torr (i.e., ~10) -3 The pressure will be maintained at around Pa. However, some high vacuum systems are 10 -7 Torr (i.e., ~10) -5 It can operate at pressures below approximately Pa. In certain embodiments, a vacuum state is created using rough pumps and / or turbomolecular pumps connected to each of the transfer chamber 106 and one or more process chambers (process chambers 108-118, etc.). However, other types of vacuum pumps are also conceivable.

[0016]

[0023] In certain embodiments, substrates are loaded into the processing system 100 through the door of the first load lock chamber 104 (also referred to as the “access port”) and unloaded from the processing system 100 through the door of the second load lock chamber 120. In certain embodiments, a stack of multiple substrates is supported in a cassette located within the FOUP and transferred from the FOUP to the first load lock chamber 104 by a robot 105. Once vacuuming is performed in the first load lock chamber 104, a robot 107 located in the transfer chamber 106 is used to remove one substrate at a time from the first load lock chamber 104. In certain embodiments, the placement of the cassette within the first load lock chamber 104 and / or the second load lock chamber 120 allows multiple substrates to be stacked and held in the cassette before being received by the robot 107 in the transfer chamber 106 or the robot 105 in the EFEM 102. However, other loading and unloading configurations are also conceivable.

[0017]

[0024] Pre-cleaning of the substrate is important to remove impurities (such as oxides) from the substrate surface so that the film (such as a metal film) deposited in the deposition chamber is not electrically insulated from the conductive metal surface area of ​​the substrate by a layer of impurities. By performing pre-cleaning in the first and second pre-cleaning chambers 110, 114 (sharing the same vacuum environment as the first and second deposition chambers 112, 116), the substrate can be transferred from the cleaning chamber to the deposition chamber without being exposed to the atmosphere. This prevents the formation of impurities on the substrate during transfer. In addition, since a vacuum is maintained within the substrate processing system 100 while the cleaned substrate is being transferred to the deposition chamber, the vacuum pump downcycle is reduced. In some embodiments, the processing system 100 may allow the addition or removal of one or more substrates from the load lock chamber by releasing the vacuum in either the first load lock chamber 104 or the second load lock chamber 120 when the cassette in that load lock chamber is empty or full.

[0018]

[0025] In certain embodiments, within each of the pre-cleaning chamber and the deposition chamber, only one substrate is processed at a time. Alternatively, multiple substrates (e.g., 4 to 6 substrates) may be processed at a time. In such embodiments, the substrates may be disposed on a rotatable pallet within the corresponding chamber. In certain embodiments, the first and second pre-cleaning chambers 110, 114 are inductively coupled plasma (ICP) chambers for etching the substrate surface. However, other types of pre-cleaning chambers are also envisioned. In certain embodiments, one or both of the pre-cleaning chambers are replaced with a film deposition chamber configured to perform a process of physical vapor deposition (PVD), chemical vapor deposition (CVD), or atomic layer deposition (ALD) (such as deposition of silicon nitride).

[0019]

[0026] Within a pre-cleaning chamber including an ICP source, a coil at the top of the chamber is energized by an external RF source, generating an excitation field within the chamber. A pre-cleaning gas (such as argon or helium) is flowed from an external gas source through the chamber. The pre-cleaning gas atoms within the chamber are ionized (charged) by the supply of RF energy. In some embodiments, the substrate is biased by an RF bias source. The charged atoms are attracted to the substrate, thereby causing bombardment and / or etching of the substrate surface. Depending on the desired etching rate and the material to be etched, a gas other than argon may be used.

[0020]

[0027] In certain embodiments, the first and second deposition chambers 112, 116 are PVD chambers. In such embodiments, the PVD chamber may be configured to deposit copper, titanium, aluminum, gold, and / or tantalum. However, other types of deposition processes and deposition materials are also envisioned.

[0021] Exemplary PVD Chamber and Method of Use

[0028] Figure 2A is a side cross-sectional view of a PVD chamber 200 that may be used in the substrate processing system 100 of Figure 1 according to certain embodiments. For example, the PVD chamber 200 may represent either of the first and second deposition chambers 112, 116 shown in Figure 1. Alternatively, the PVD chamber 200 may represent an additional deposition chamber. Figure 2B is an enlarged cross-sectional view of a portion of the PVD chamber 200 of Figure 2A according to certain embodiments. Therefore, in this document, Figures 2A and 2B will be explained together for clarity.

[0022]

[0029] The PVD chamber 200 generally includes a chamber body 202, a lid assembly 204 connected to the chamber body 202, a magnetron 208 connected to the lid assembly 204, a pedestal 210 located inside the chamber body 202, and a target 212 located between the magnetron 208 and the pedestal 210. During processing, the inside of the PVD chamber 200 or processing area 237 is maintained under vacuum pressure. The processing area 237 is generally defined by the chamber body 202 and the lid assembly 204 and is located primarily between the target 212 and the substrate support surface of the pedestal 210.

[0023]

[0030] To apply a negative bias voltage to the target 212, a power supply 206 is electrically connected to the target 212. In certain embodiments, the power supply 206 is either a DC-mode power supply or a pulsed DC-mode power supply. However, other types of power supplies (such as a radio frequency (RF) source) are also conceivable.

[0024]

[0031] The target 212 includes the target material 212M and the backing plate 218, and is part of the lid assembly 204. The front surface of the target material 212M of the target 212 defines a portion of the processing area 237. The backing plate 218 is positioned between the magnetron 208 and the target material 212M of the target 212 (see Figure 2B), and in some embodiments, the target material 212M is bonded to the backing plate 218. Typically, the backing plate 218 is an integrated part of the target 212, and therefore, for the sake of clarity, these two can be collectively referred to as the “target”. To prevent an electrical short circuit between the backing plate 218 and the support plate 213 of the grounded lid assembly 204, the backing plate 218 is electrically insulated from the support plate 213 of the lid assembly 204 by using an electrical insulator 215. As shown in Figure 2A, the backing plate 218 has a plurality of cooling channels 233. The plurality of cooling channels 233 are configured to receive a coolant (such as deionized pure water) passing through them to cool the target 212 or to control the temperature of the target 212. In certain embodiments, the backing plate 218 may have one or more cooling channels. In some examples, the plurality of cooling channels 233 may be interconnected and / or form meandering paths through the body of the backing plate 218. A shield 223 is connected to the support plate 213. The shield 223 prevents the sputtered material from the target 212 from depositing a film on the support plate 213. In some embodiments, the magnetron 208 and the target 212 (including the target material 212M and the backing plate 218) each have a triangular or delta shape, so that the side edges of the target 212 include three corners (e.g., three rounded corners shown in Figures 2C-2D). As shown in Figure 2C, the target 212 is oriented such that the tip of one corner of the triangular or delta-shaped target is at or near the central axis 291. As shown in Figure 2C, when viewed from the planar direction, the surface area of ​​the target 212 is less than the surface area of ​​the substrate 216.In some embodiments, the surface area of ​​the top surface of the pedestal exceeds the surface area of ​​the top surface of the target 212. In some embodiments, the ratio of the surface area of ​​the top surface of the target 212 to the deposition surface of the substrate 216 (e.g., the top surface of the substrate) is between approximately 0.1 and approximately 0.4.

[0025]

[0032] As shown in Figure 2A, the magnetron 208 is positioned above a portion of the target 212 within the region of the lid assembly 204 that is maintained at atmospheric pressure. The magnetron 208 includes a magnet plate 209 (or yoke) and a plurality of permanent magnets 211 attached to a shunt plate. The magnet plate 209 has a triangular or delta shape with three corners (see Figure 2C). The permanent magnets 211 are arranged in one or more closed loops. Each of the one or more closed loops may contain a plurality of magnets, which are positioned and oriented with respect to the poles of the magnets (i.e., north (N) and south (S) poles) so that the magnetic field extends from one loop to the next, or between different parts of the loop. The size, shape, magnetic field strength, and distribution of the individual permanent magnets 211 are generally selected to produce a desired erosion pattern across the entire surface of the target 212 when used in combination with the vibration of the magnetron 208, as described later. In certain embodiments, the magnetron 208 may include multiple electromagnets instead of the permanent magnet 211.

[0026]

[0033] The pedestal 210 has an upper surface 214 that supports the substrate 216. A clamp 224 is used to hold the substrate 216 on the upper surface 214. In certain embodiments, the clamp 224 is mechanically operated. For example, the weight of the clamp 224 may hold the substrate 216 in place. In certain embodiments, the clamp 224 is lifted by a pin. The pin is movable relative to the pedestal 210 so as to contact the underside of the clamp 224.

[0027]

[0034] In this example, the back side of the substrate 216 is in contact with the top surface 214 of the pedestal 210. In some examples, the entire back side of the substrate 216 may be in electrical and thermal contact with the top surface 214 of the pedestal 210. The temperature of the substrate 216 may be controlled using a temperature control system 232. In certain embodiments, the temperature control system 232 has an external cooling source that supplies a coolant to the pedestal 210. In some embodiments, the external cooling source is configured to supply a cryogenic cooling fluid (e.g., Galden®) to a heat exchange element (e.g., a coolant flow path) inside the substrate support portion adjacent to the top surface 214 of the pedestal 210 in order to control the temperature of the substrate to below 20°C (e.g., below 0°C, for example, about -20°C or below). In certain embodiments, the temperature control system 232 includes a heat exchanger and / or backside gas flow within the pedestal 210. In some examples, the cooling source may be replaced or enhanced with a heating source to raise the workpiece temperature separately from the heat generated during the sputtering process. Controlling the temperature of the substrate 216 during the sputtering process is important for obtaining predictable and reliable thin films. In certain embodiments, an RF bias source 234 is electrically connected to the pedestal 210 to bias the substrate 216 during the sputtering process. Alternatively, the pedestal 210 may be grounded, floating, or biased only by a DC voltage source. Biasing the substrate 216 can improve film density, adhesion, and material reactivity on the substrate surface.

[0028]

[0035] The pedestal shaft 221 is connected to the underside of the pedestal 210. A rotating union 219 is connected to the lower end of the pedestal shaft 221 to provide a rotary fluid connection with the temperature control system 232 and further to provide a rotary electrical connection with the RF bias source 234. In certain embodiments, a copper tube is arranged to pass through the pedestal shaft 221 for both the fluid and electrical connections with the pedestal 210. The rotating union 219 includes a ferrofluidic rotary seal mechanism (also referred to as a "ferrofluidic® seal") as a vacuum rotary feedthrough.

[0029]

[0036] In this example, the substrate 216 is a panel. In certain embodiments, the top surface 214 of the pedestal 210 fits a single square or rectangular panel substrate having sides of 500 mm or more (e.g., 510 mm × 515 mm or 600 mm × 600 mm). However, the apparatus and methods of the present disclosure can be mounted with a number of different types and sizes of substrates.

[0030]

[0037] In certain embodiments, the pedestal 210 is rotatable about a central axis 291 perpendicular to at least a portion of the upper surface 214 of the pedestal 210. In this example, the pedestal 210 is rotatable about a vertical axis (corresponding to the z-axis). In certain embodiments, the rotation of the pedestal 210 is continuous and uninterrupted. In other words, the motor 231 driving the rotation of the pedestal 210 does not have a programmed stop point for rotating the substrate 216 to a specific fixed rotational position. Instead, the pedestal 210 rotates continuously relative to the target 212 to improve film uniformity. In certain embodiments, the motor 231 is an electric servo motor. The motor 231 can be raised and lowered by a separate motor 235. The motor 235 may be an electric linear actuator. The bellows 217 surround the pedestal shaft, forming a seal between the chamber body 202 and the motor 231 while the pedestal 210 rises and falls.

[0031]

[0038] The lower surface of the target 212, defined by the surface of the target material 212M, faces the upper surface 214 of the pedestal 210 and the front side of the substrate 216. The lower surface of the target 212 faces away from the backing plate 218, which faces the atmospheric or external region of the PVD chamber. In certain embodiments, the target material 212M of the target 212 is formed from a metal for sputtering the corresponding film composition onto the substrate 216. In one example, the target material 212M may include a pure material or an alloy containing elements selected from the group consisting of copper (Cu), molybdenum (Mo), nickel (Ni), titanium (Ti), tantalum (Ta), aluminum (Al), cobalt (Co), gold (Au), silver (Ag), manganese (Mn), and silicon (Si). The material deposited on the substrate 216 by the method described in this document may include pure metals, doped metals, metal alloys, metal nitrides, metal oxides, metal carbides containing the aforementioned elements, as well as oxides, nitrides, or carbides containing silicon.

[0032]

[0039] In the illustrated embodiment, the plane parallel to the underside of the target 212 is inclined at an angle 282 with respect to the upper surface of the support plane 213 (see Figure 2B). In other words, the plane of the target 212 is inclined with respect to the plane of the upper surface 214 of the pedestal 210, and therefore with respect to the front side of the substrate 216. Since the bodies of the pedestal 210 and the target 212 are generally flat, it can be said that the target 212 is inclined with respect to the pedestal 210, or vice versa. In certain embodiments, the angle 282 is approximately 2° to 10° (for example, approximately 3° to 5°). In Figure 2B, the angle 282 is approximately 4°. As shown in Figure 2A, the target 212 is inclined downward in the direction from the radially inner edge 212C of the target 212 to the radially outer edge 212A of the target 212. The radially inner edge 212C is further (e.g., vertically) from the top surface 214 of the pedestal 210 compared to the radially outer edge 212A. In one example, the target 212 includes an edge, which includes three corners, and one of the three corners, which coincides with the radially inner edge 212C, is positioned further from the top surface of the pedestal 210 compared to each of the other two corners due to the angle of inclination formed. It has been found that if the angle of inclination exceeds the range presented in this document, the variation in the target-substrate distance from the radially inner edge 212C to the radially outer edge 212A can become too large, resulting in undesirable variations in film quality. In one example, undesirable variations in film quality include undesirable variations in film roughness or grain size, or center-edge uniformity of the substrate. In another example, undesirable variations in film quality may include an undesirable ratio in the PVD process between the amount of sputtering material supplied to the surface of the substrate and the amount of sputtering material supplied to the shield surrounding the substrate. If the tilt angle falls below the range presented in this book, undesirable film inhomogeneity will occur. Therefore, the tilt angle window presented in this book enables the achievement of film deposition results that surpass those of other conventional designs.

[0033]

[0040] In this example, the pedestal 210 is substantially horizontal, i.e., parallel to the xy-plane, while the target 212 is non-horizontal, i.e., inclined with respect to the xy-plane. However, other non-horizontal orientations of the pedestal 210 are also possible.

[0034]

[0041] The first actuator 220 is connected to the lid assembly 204 and further connected to the magnetron 208 to vibrate the magnetron 208 in the circumferential direction B (see Figure 2C) around the rotation axis 293 of the first actuator 220. The rotation axis 293 is positioned at an angle of 283 or close to it with respect to the central axis 291. In some embodiments, the rotation axis 293 is perpendicular to the surface of the target 212. In some embodiments, as shown in Figure 2B, the rotation axis 293 is positioned at a certain distance from the magnetron 208 (e.g., the nearest edge 208C of the magnetron 208) when measured against a plane perpendicular to the rotation axis 293. The first actuator 220 has a rotor 225 and a stator 227. The stator 227 is connected to a support post 290, which is connected to a support plate 213 of the lid assembly 204. The rotor 225 is connected to a mounting plate 229, which is connected to a magnetron 208 via a hinge 228 (details below). In some configurations, the central axis 291 of the support post 290 is centered relative to the chamber body 202 and the lid assembly 204. In certain embodiments, the first actuator 220 is an electric motor. Alternatively, a pneumatic motor may be used. In some examples, the first actuator 220 may be a servo motor or a stepping motor. In some examples, the first actuator 220 may be a direct-drive motor, a belt-drive motor, or a gear-drive motor. In certain embodiments, the first actuator 220 has a programmable stop point corresponding to the periphery vibration angle. In certain embodiments, the first actuator 220 is an electric or pneumatic rotary actuator corresponding to the periphery vibration angle. However, other types of motors / actuators are also conceivable.

[0035]

[0042] In the illustrated embodiment, a hinge 228 is used to connect the support 230 of the magnetron 208 to the first actuator 220. The hinge 228 allows the magnetron 208 to be raised and rotated without interfering with the backing plate 218. This provides easy access to the underside of the magnetron 208 and the upper side of the backing plate 218 for maintenance (such as replacing the target 212).

[0036]

[0043] As described above, in some embodiments, the first actuator 220 is inclined with respect to the lid assembly 204. As shown in Figure 2B, the rotation axis 293 of the first actuator 220 is inclined at an angle of 283 with respect to the central axis 291 of the support post 290. The central axis 291 and the rotation axis 293 intersect at the pivot point 295. In this example, the rotation axis 293 of the first actuator 220 is perpendicular to the mounting plate 229, which is inclined at an angle of 281 with respect to the upper surface of the support plate 213. The angles 281 and 283 are equal, and it is recognized that during processing, when the first actuator 220 and the second actuator 222 are used to translate the magnetron 208 over the surface of the backing plate 218, the distance between the lower surface of the magnetron 208 and the upper surface of the backing plate 218 is kept constant. In this example, the first actuator 220 is parallel to the backing plate 218 of the target 212, so that the angle 282 of the target 212 is equal to the angle 281 of the first actuator 220. In some other examples, the first actuator 220 may be oriented perpendicularly (see Figure 3A), for example, parallel to or collinear with the central axis 291, rather than inclined (see Figures 2A-2B).

[0037]

[0044] Referring again to Figures 2A-2B, the second actuator 222 is connected between the magnetron 208 and the first actuator 220, allowing the magnetron 208 to vibrate radially "A" (see Figure 2C) relative to the target 212 and the PVD chamber 200. The second actuator 222 is an electrically operated linear actuator having a stroke distance corresponding to the desired radial vibration distance. Alternatively, a pneumatic linear actuator may be used. In certain embodiments, the second actuator 222 is an electrically operated or pneumatic rotary motor having a programmable stop point corresponding to the radial vibration distance. In some examples, the second actuator 222 may be a direct-drive motor, a belt-drive motor, or a gear-drive motor connected to a main screw assembly, which may include a slide used to guide the desired radial motion of the magnetron 208. However, other types of motors / actuators are also conceivable.

[0038]

[0045] The parallel movement of the magnetron 208 over the surface of the backing plate 218 is used to achieve full erosion of the underside of the target 212, which helps in fault management. In addition, this also helps to extend the life of the target 212 compared to a fixed magnet in which only a specific area of ​​the target 212 is eroded. In certain embodiments, as detailed below in relation to Figure 2D, the first and second actuators 220, 222 are synchronized to control the scanning path of the magnetron 208 in one or more directions between the two ends of the back side of the backing plate 218.

[0039]

[0046] A system controller 250 (such as a programmable computer) is connected to the PVD chamber 200 to control the PVD chamber 200 or its components. For example, the system controller 250 may control the operation of the PVD chamber 200 by using direct control of the power supply 206, magnetron 208, pedestal 210, cooling of the backing plate 218, first actuator 220, second actuator 222, temperature control system 232, and / or RF bias source 234, or by using indirect control of other controllers associated with them. During operation, the system controller 250 enables data acquisition and feedback from each component to coordinate processing within the PVD chamber 200.

[0040]

[0047] The system controller 250 includes a programmable central processing unit (CPU) 252, which can operate together with memory 254 (e.g., non-volatile memory) and support circuits 256. The support circuits 256 (e.g., cache, clock circuit, input / output subsystem, power supply, etc., and combinations thereof) are conventionally connected to the CPU 252 and to various components of the PVD chamber 200.

[0041]

[0048] In some embodiments, the CPU 252 is one of any form of general-purpose computer processor used in an industrial setting (such as a programmable logic controller (PLC)) for controlling various monitoring system components and subprocessors. The memory 254 linked to the CPU 252 is non-transient and is typically one or more readily available memories such as random access memory (RAM), read-only memory (ROM), a floppy disk drive, a hard disk, or any other form of local or remote digital storage.

[0042]

[0049] In this document, memory 254 is in the form of a computer-readable storage medium (e.g., non-volatile memory) containing instructions, which, when executed by the CPU 252, facilitate the operation of the PVD chamber 200. The instructions in memory 254 are in the form of a program product (e.g., a middleware application, a device software application, etc., a program that implements the method of this disclosure). The program code may be adapted to one of several different programming languages. In one example, this disclosure may be implemented as a program product stored in a computer-readable storage medium used with a computer system. The program(s) of the program product define the functionality of the embodiments (including the method of this document).

[0043]

[0050] Exemplary computer-readable storage media include (i) non-write storage media that permanently store information (e.g., read-only memory devices in a computer, such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory), and (ii) writable storage media in which stored information can be modified (e.g., floppy disks in a diskette drive or hard disk drive, or any type of solid-state random-access semiconductor memory). This includes, but is not limited to, the computer-readable storage medium if it holds computer-readable instructions that instruct the functions of the methods described herein.

[0044]

[0051] During operation, the PVD chamber 200 is evacuated and refilled with argon gas. Power supply 206 applies a negative bias voltage to the target 212, generating an electric field inside the chamber body 202. This electric field attracts gas ions, and electrons are generated by collisions between the gas ions and the exposed surface of the target 212. These electrons enable the generation and maintenance of a high-density plasma near the underside of the target 212. The plasma is concentrated near the surface of the target material 212M by the magnetic field generated by the magnetron 208. The magnetic field forms a closed-loop annular path that acts as an electron trap. This electron trap reshapes the trajectories of secondary electrons ejected from the target material 212M into cycloidal paths, significantly increasing the probability of ionization of the sputtering gas within the confinement zone. The plasma confined near the underside of the target 212 contains argon atoms, positively charged argon ions, free electrons, and neutral atoms (i.e., non-ionized atoms) sputtered from the target material 212M. Argon ions in the plasma strike the target surface, ejecting atoms of the target material. These atoms are accelerated toward the substrate 216, depositing a thin film on the substrate surface.

[0045]

[0052] Typically, inert gases (such as argon) are used as sputtering gases. This is because inert gases tend not to react with the target material or combine with any process gases, and their relatively high molecular weight increases the speed of sputtering and deposition.

[0046]

[0053] Figure 2C is a top view of the target 212 and substrate 216 overlapping the chamber body 202 of Figure 2A, according to one embodiment. In one embodiment, the radial outer edge 212A of the target 212 extends about 1 inch to about 3 inches (e.g., about 1.5 inches) beyond the corner of the substrate 216. In one embodiment, the radial inner edge 212C of the target 212 is spaced about 0.25 inches to about 0.75 inches (e.g., about 0.5 inches) from the central axis 291 of the support post 290 (which may coincide with the radial center of the chamber body 202).

[0047]

[0054] Figure 2D is a top view of the superimposed magnetron 208 and target 212 from Figure 2A, according to one embodiment. Note that the structure surrounding the periphery of the target 212 in Figure 2D is part of the backing plate 218. As shown in Figures 2C to 2D, the target material 212M, the backing plate 218, and the magnetron 208 each have a triangular or delta shape with three rounded corners, one of which is located near or substantially adjacent to the central axis 291. As shown in Figure 2D, the target 212 and the magnetron 208 are molded and oriented such that the magnetron 208 can be translated over substantially all of the active area of ​​the target 212 (e.g., the portion of the target material 212M of the target). In some embodiments, the target 212 and the magnetron 208 have substantially the same shape, as will be detailed below. As shown in Figure 2D, the radius R1 of the magnetron 208 is smaller than the corresponding radius R2 of the target 212, which allows the magnetron 208 to be translated radially, as described above. As shown in Figure 2D, the radial outer edge 208A of the magnetron 208 has a radius of curvature smaller than or equal to that of the corresponding radial outer edge 212A of the target 212. In some embodiments, these radii of curvature differ by about 40% or less (e.g., 20% or less). The arc length of the radial outer edge 208A of the magnetron 208 is smaller than the corresponding arc length of the radial outer edge 212A of the target 212, which allows the magnetron 208 to be translated peripherally, as described above. As shown in Figure 2D, the edges 208B and 208D on both sides of the magnetron 208 and the corresponding edges 212B and 212D on both sides of the target 212 are oriented substantially parallel to each other, respectively. In some embodiments, the angles between edges 208B and 212B, and between edges 208D and 212D, respectively, are within a range of approximately 5° or less (e.g., approximately 0° to approximately 5°, for example, approximately 0°, i.e., parallel to each other).

[0048]

[0055] As shown in Figure 2D, the first and second actuators 220, 222 may be synchronized to scan the magnetron 208 along the scan path 226. The first and second actuators 220, 222 may be synchronized (e.g., by a system controller 250) to control the translation of the magnetron 208 so that it moves along the scan path 226. Note that the scan path 226 is illustrated for illustrative purposes only to move one step at a time in a clockwise direction. However, the scan path 226 may include one or more reciprocating motions in any desired direction along any portion of the scan path 226 (i.e., a scan path segment) without departing from the basic scope of the disclosure presented herein. In some embodiments, the scan path 226 includes a process of translating the magnetron 208 in at least one of the radial and periphery directions, as described above, and thus includes a scan path 226 (often referred to herein as a loop path) such as the scan path shown in Figure 2D. In some embodiments, the translation of the magnetron 208 does not include the rotational motion of the magnetron 208 (for example, the rotational or torsional motion of the magnetron 208 during processing around a rotation axis located within the range of the magnetron 208, which is common in PVD chamber designs including conventional circular targets). The scan path 226 includes an arc-shaped peripheral component "B" (see Figure 2C), which is generally aligned with the y-axis in Figure 2C, mainly by peripheral motion provided by the operation of the first actuator 220. In addition, the scan path 226 includes a radial component "A" (see Figure 2C). In Figure 2C, the radial component "A" is shown aligned with the x-axis by the second actuator 222 being aligned with the x-axis at some point during the progress of the scan path 226. In the example shown in Figure 2D, the scan path 226 forms a complex loop-shaped scan path 226, which is shown as a series of scan path segments (indicated by a series of connected arrows). The scan path 226 includes two segments (e.g., one reciprocating motion) in some embodiments, but typically includes two or more segments.These segments are used to ensure reduced particle generation and improved utilization of the target material by removing the target material 212M from the entire area of ​​the target surface as the magnetron 208 moves parallel to both ends of the target 212 during processing. The scan path 226 is precisely controlled and can be adapted to a wide variety of different segment shapes based on the vibration frequency and stroke length of each motor. In certain examples, the scanning of the magnetron 208 may be controlled to increase the total erosion area on the underside of the target 212. In certain examples, the scanning of the magnetron 208 may be programmed to control the uniformity of the film deposited on the substrate surface. In certain examples, the scanning path of the magnetron 208 may be adjusted to compensate for any variations in the thickness of the deposited film on the substrate surface.

[0049]

[0056] In certain embodiments, the first and second actuators 220 and 222 are synchronized with each other, as well as with the rotation of the pedestal 210, in order to further control the uniformity of the film deposited on the substrate surface.

[0050] Alternative PVD chambers and methods of use

[0057] Figure 3A is a cross-sectional view of the PVD chamber 300 formed by applying the cutting lines shown in the top view of the PVD chamber 300 shown in Figure 3B. The PVD chamber 300 can be used in the substrate processing system 100 of Figure 1 in certain embodiments. For example, the PVD chamber 300 may represent either of the first and second deposition chambers 112, 116 shown in Figure 1. Alternatively, the PVD chamber 300 may represent an additional deposition chamber. Figure 3B is a schematic top view of the PVD chamber 300 of Figure 3A in certain embodiments. Therefore, in this document, Figures 3A and 3B will be explained together for clarity.

[0051]

[0058] In contrast to the PVD chamber 200 (see Figure 2A), which is only capable of single-target sputtering, the PVD chamber 300 allows for simultaneous co-sputtering from one or more different targets. The PVD chamber 300 includes a second magnetron 308 connected to a lid assembly 204, and a second target 312 positioned between the second magnetron 308 and the upper surface 214 of the pedestal 210. A hinge 328 is used to connect the support 330 of the second magnetron 308 to the first actuator 320. The second target 312 is inclined similarly to the first target 212 described above. In certain embodiments, the first and second targets 212, 312 are formed from the same material. In certain embodiments, the first and second targets 212, 312 are formed from different materials. In certain embodiments, the first and second targets 212, 312 can simultaneously deliver the same sputtering material to separate areas of the substrate. Although Figure 2A shows only one target and Figure 3A shows two targets, embodiments of the present disclosure are not particularly limited to those illustrated. In some other embodiments, the PVD chamber includes more than two targets. In such embodiments, the PVD chamber includes magnetrons positioned on the targets such that at least one magnetron is positioned on one of the targets. In certain embodiments, each target is radially inclined toward the central axes 291, 393, similar to the first and second targets 212, 312 described above.

[0052]

[0059] In the PVD chamber 300, the first actuator 320 is connected to the lid assembly 204 and further connected to both magnetrons 208 and 308 so as to vibrate both magnetrons 208 and 308 in periphery directions "B" and "B'" around the central axes 291 and 393 with respect to the corresponding targets 212 and 312. The magnetrons 208 and 308 rotate in the same direction as the rotor 225 (e.g., clockwise or counterclockwise). As shown in Figure 3A, the first actuator 320 is aligned with the lid assembly 204, and the magnetrons 208 and 308 are each tilted at an angle of 282 with respect to the first actuator 320 so as to be aligned parallel to the backing plates 218 and 318 of the corresponding targets 212 and 312. In this example, the central axis 393 of the first actuator 320 coincides with the central axis 291 of the support post 290. This is in contrast to the PVD chamber 200 (see Figures 2A-2B), in which, in some embodiments, the first actuator 220 is tilted by an angle of 283 relative to the lid assembly 204.

[0053]

[0060] In the PVD chamber 300, the second actuator 322 is connected between the magnetron 308 and the first actuator 320, allowing the magnetron 308 to vibrate radially A' (see Figure 3B) relative to the target 312 and the PVD chamber 300. The second actuator 322 operates independently of the first actuator 320, similar to the operation of the second actuator 222 described above. In some embodiments, each magnetron 208, 308 is translated in at least one of the radial and periphery directions, as described above. The scan path of each magnetron 208, 308 includes an arcuate periphery component "B", "B'", which is generally aligned with the y-axis direction in Figure 3B, mainly by the periphery motion provided by the operation of the first actuator 320. In addition, the scan paths of each magnetron 208, 308 include radial components "A" and "A'" aligned in the x-axis direction by the operation of the corresponding second actuators 222, 322. The scan paths are precisely controlled so that the magnetrons can move in parallel along one or more paths, which may have a wide variety of different shapes, based on the adjustment of the vibration frequency and stroke length of each motor. The radial component "A" of magnetron 208 and the radial component "A'" of magnetron 308 are controlled independently of each other. However, the peripheral component "B" of magnetron 208 and the peripheral component "B'" of magnetron 308 are connected by being coupled to the first actuator 320, as described above.

[0054]

[0061] Figure 4 shows a method 400 for processing a substrate using a PVD chamber according to one embodiment. Note that the PVD chamber 200 is described as illustrative only in the following examples. In step 402, the substrate 216, placed on the upper surface 214 of the pedestal 210, is rotated around a rotation axis with respect to one or more targets (e.g., target 212 or targets 212 and 312) using a motor 231. In some embodiments, the pedestal 210 rotates continuously with respect to one or more targets to improve film uniformity.

[0055]

[0062] In step 404, material is sputtered from the first target 212 to deposit a film on the rotating substrate 216. The first target 212 is tilted at an angle of 282 degrees relative to the pedestal 210 (see Figure 2B). When the PVD chamber 300 configuration is used, material from the second target 312 may also be sputtered onto the substrate 216 while the substrate is rotating. The material from the first and second targets 212 and 312 may be sputtered simultaneously onto separate areas of the substrate 216.

[0056]

[0063] In step 406, the first magnetron 208 is moved in the peripheral direction B relative to the first target 212 by using a first actuator 220 connected to the magnetron 208 via hinges 228 and support 230. When the PVD chamber 300 configuration is used, both the first magnetron 208 and the second magnetron 308 are moved simultaneously in the peripheral direction B by using a first actuator 320 connected to the first magnetron 208 and the second magnetron 308 by hinges 228, 328 and support 230, 330.

[0057]

[0064] In step 408, the first magnetron 208 is translated radially A relative to the first target 212 by using a first actuator 220 connected to the magnetron 208 via a support 230. When the PVD chamber 300 configuration is used, both the first magnetron 208 and the second magnetron 308 can be translated radially A simultaneously by using a system controller 250, a second actuator 222 connected to the first magnetron 208 via a support 230, and a second actuator 322 connected to the second magnetron 308 via a support 330. The peripheral B component and radial A component of the translation of one or more magnetrons can be controlled independently of each other by using the system controller 250. In some embodiments of method 400, steps 406 and 408 are performed substantially simultaneously.

[0058]

[0065] In addition, in some embodiments of Method 400, steps 402, 404, 406, and 408 are performed substantially simultaneously. In some embodiments of Method 400, steps 402, 406, and 408 are started before the start of step 404. In some embodiments of Method 400, steps 402, 404, 406, and 408 are started sequentially. In some embodiments of Method 400, steps 402, 404, 406, and 408 are started discontinuously.

[0059]

[0066] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

1. A physical vapor deposition (PVD) chamber, A pedestal disposed within the processing area of ​​the PVD chamber, having an upper surface configured to support a substrate on top of it, A first motor connected to the pedestal, configured to rotate the pedestal about a first axis perpendicular to at least a portion of the upper surface of the pedestal, A lid assembly having a first surface that defines a portion of the processing area, The surface area of ​​the upper surface of the pedestal is larger than the surface area of ​​the first surface. The first surface is inclined at a first angle with respect to the plane of the upper surface of the pedestal, The PVD chamber further comprises A first magnetron is positioned on a portion of the first surface within the region of the lid assembly that is maintained at atmospheric pressure, The first magnetron is configured to vibrate in the peripheral direction about a second axis, and A second actuator configured to vibrate the first magnetron in the radial direction, A hinge connected to both the first actuator and the second actuator, A system controller is configured to vibrate the first magnetron along at least a portion of the first path by simultaneously vibrating the first magnetron with the first actuator and the second actuator, A PVD chamber equipped with a PVD chamber.

2. The PVD chamber according to claim 1, wherein the first magnetron and the first surface are delta-shaped.

3. The PVD chamber according to claim 1, further comprising a rotating union connected to the pedestal, configured to provide a fluid connection to the pedestal while the pedestal rotates about the first axis.

4. The PVD chamber according to claim 1, wherein the upper surface of the pedestal is configured to receive a square or rectangular substrate having sides of 500 mm or more in length.

5. The PVD chamber according to claim 1, wherein the edge of the first surface has three corners, and one of the three corners is located closer to the first axis in the radial direction than the other two corners.

6. The PVD chamber according to claim 5, wherein one of the three corners of the first surface is further from the upper surface of the pedestal than each of the other two corners.

7. A second surface defining another portion of the processing region, The surface area of ​​the upper surface of the pedestal is greater than the surface area of ​​the second surface. The second surface is inclined at a second angle with respect to the plane of the upper surface of the pedestal, A second magnetron is positioned on a portion of the second surface within the region of the lid assembly that is maintained at atmospheric pressure, The PVD chamber according to claim 1, further comprising:

8. A first target disposed on the first surface and comprising a first target material and a first backing plate, wherein the first backing plate has one or more cooling channels inside, and the cooling channels are configured to receive a coolant passing through the cooling channels in order to cool the first target, A second target disposed on the second surface and comprising a second target material and a second backing plate, wherein the second backing plate has one or more cooling channels inside, and the cooling channels are configured to receive a coolant passing through them in order to cool the second target, Furthermore, The PVD chamber according to claim 7, wherein the first target material and the second target material include the same material.

9. A first target disposed on the first surface and comprising a first target material and a first backing plate, wherein the first backing plate has one or more cooling channels inside, and the cooling channels are configured to receive a coolant passing through the cooling channels in order to cool the first target, A second target disposed on the second surface and comprising a second target material and a second backing plate, wherein the second backing plate has one or more cooling channels inside, and the cooling channels are configured to receive a coolant passing through them in order to cool the second target, Furthermore, The PVD chamber according to claim 7, wherein the first target material and the second target material are made of different materials.

10. A first target disposed on the first surface, comprising a first target material and a first backing plate, wherein the first backing plate has one or more cooling channels inside, and the cooling channels are configured to receive a coolant passing through them in order to cool the first target, A second target disposed on the second surface and comprising a second target material and a second backing plate, wherein the second backing plate has one or more cooling channels inside, and the cooling channels are configured to receive a coolant passing through them in order to cool the second target, Furthermore, The PVD chamber according to claim 7, wherein the first target and the second target are configured to deposit the same material simultaneously on separate areas of a substrate.

11. The second axis is inclined with respect to the first axis, The PVD chamber according to claim 1, wherein the second axis extends in a direction perpendicular to the first surface.

12. The PVD chamber according to claim 1, wherein the system controller is configured to synchronize the first actuator and the second actuator in order to maintain the vibration of the first magnetron along the first path.

13. A physical vapor deposition (PVD) chamber, A pedestal disposed within the processing area of ​​the PVD chamber, having an upper surface configured to support a substrate on top of it, A first motor connected to the pedestal, configured to rotate the pedestal about a first axis perpendicular to at least a portion of the upper surface of the pedestal, A lid assembly having a first surface that defines a portion of the processing area, The surface area of ​​the upper surface of the pedestal is larger than the surface area of ​​the first surface. The first surface is inclined at a first angle with respect to the plane of the upper surface of the pedestal, The PVD chamber further comprises A first magnetron is positioned on a portion of the first surface within the region of the lid assembly that is maintained at atmospheric pressure, The first magnetron is configured to vibrate in the radial direction extending from the central axis of the PVD chamber, The first magnetron is configured to vibrate in the peripheral direction about a second axis, and a second actuator is configured to vibrate the first magnetron about a second axis. A hinge connected to both the first actuator and the second actuator, A computer-readable medium that stores instructions, The system is equipped with such that when the instruction is executed by the system's processor, the system The first motor is to rotate the pedestal around the first shaft, The first actuator is configured to vibrate the first magnetron in the radial direction, To execute simultaneously, PVD chamber.

14. The executable command is further configured to cause the second actuator to simultaneously vibrate the first magnetron in the peripheral direction, The PVD chamber according to claim 13, wherein the second axis is positioned at a certain distance from the first magnetron when measured with respect to a plane perpendicular to the second axis.

15. The PVD chamber according to claim 14, wherein the first actuator and the second actuator are configured to vibrate the first magnetron along at least a portion of the first path by simultaneously vibrating the first magnetron.

16. The PVD chamber according to claim 14, wherein the edge of the first surface has three corners, and one of the three corners is located closer to the first axis in the radial direction than the other two corners.

17. The PVD chamber according to claim 16, further comprising a first target disposed on the first surface and comprising a first backing plate, wherein the first backing plate has one or more cooling channels inside, and the cooling channels are configured to receive a coolant passing through the cooling channels to cool the first target.

18. A processing system, Transfer chamber and The transfer chamber is connected to a physical vapor deposition (PVD) chamber, and the PVD chamber is A pedestal disposed within the processing area of ​​the PVD chamber, having an upper surface configured to support a substrate on top of it, A first motor connected to the pedestal, configured to rotate the pedestal about a first axis perpendicular to at least a portion of the upper surface of the pedestal, A lid assembly having a first surface that defines a portion of the processing area, The surface area of ​​the upper surface of the pedestal is larger than the surface area of ​​the first surface. The first surface is inclined at a first angle with respect to the plane of the upper surface of the pedestal, The PVD chamber further comprises: A first magnetron is positioned on a portion of the first surface within the region of the lid assembly that is maintained at atmospheric pressure, A first actuator configured to vibrate the first magnetron in the radial direction, The first magnetron is configured to vibrate in the peripheral direction around a second axis, and a second actuator is configured to vibrate the first magnetron in the peripheral direction. A hinge connected to both the first actuator and the second actuator, The system includes a system controller configured to vibrate the first magnetron along at least a portion of the first path by simultaneously vibrating the first magnetron with the first actuator and the second actuator, Processing system.

19. The PVD chamber according to claim 1, wherein the first angle is between 2° and 10°.

Images