Indication device

Abstract

To provide a semiconductor device with a high opening ratio or a manufacturing method for the semiconductor device, and a semiconductor device with low consumption power or a manufacturing method for the semiconductor device.SOLUTION: A semiconductor device includes a pixel part including a first thin film transistor and a driving circuit including a second thin film transistor. The first thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. The gate electrode layer, the gate insulating layer, the semiconductor layer, the source electrode layer, and the drain electrode layer in the first thin film transistor has light-transmitting property. A gate electrode layer of the second thin film transistor is different from the gate electrode layer of the first thin film transistor in terms of material, and includes a conductive layer with lower resistance than the gate electrode layer of the first thin film transistor. A source electrode layer and a drain electrode layer of the second thin film transistor are different from the source electrode layer and the drain electrode layer of the first thin film transistor in terms of material, and include a conductive layer with lower resistance than the source electrode layer and the drain electrode layer of the first thin film transistor.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor device, a display device, a method of manufacturing them, or a method using them. Particularly, it relates to a liquid crystal display device having a semiconductor layer with translucency, a method of manufacturing the same, or a method using the same.

Background Art

[0002] In recent years, flat panel displays such as liquid crystal displays (LCDs) have become widely popular. Particularly, active matrix type LCDs provided with thin film transistors in each pixel are commonly used. Also, a display device in which a source driver (signal line drive circuit) and a gate driver ( scanning line drive circuit) or one of the drive circuits is integrally formed on the same substrate as the pixel portion has been developed. The thin film transistor often uses amorphous ( non-crystalline) silicon or poly (polycrystalline) silicon as the semiconductor layer.

[0003] However, instead of such silicon materials, metal oxides with translucency have attracted attention. For example, In-Ga-Zn-O based oxides and the like are expected to be applied to semiconductor materials required for display devices such as liquid crystal displays. Particularly, application to the channel layer of thin film transistors has been studied, and further, a technique for improving the aperture ratio by using electrodes with translucency for the gate electrode, source electrode or drain electrode has been studied (see Patent Documents 1 and 2).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

[0005] Typically, the drive circuit section that controls the thin-film transistors in the pixel section includes a source driver and a gate driver. The drive driver or either of the drive circuits is formed on the same substrate as the pixel unit in the display. In the installation, power lines and signal lines are routed from FPC terminals, etc., and the connections between elements are also handled by the elements themselves. For example, the wiring connecting two thin-film transistors consists of a gate electrode and a socket. The conductive layer that makes up the drain electrode is extended as is, and the same island ( ) is formed by the gate of one thin-film transistor and the gate of another thin-film transistor. The wiring connecting the gate and the other (called gate wiring) has the same layer structure as the gate electrode of a thin-film transistor. They are constructed from the same material, and the source of one thin-film transistor and the socket of another thin-film transistor. The wiring connecting the source and the source (called the source wiring) is on the same layer as the source electrode of the thin-film transistor. The structure and materials are the same, and the routing of power lines, signal lines, etc. is done through the gate. It is often formed with the same layer structure and materials as the wires and the aforementioned source wiring. Therefore, In the case where the source electrode and source electrode (drain electrode) are formed using a translucent material, In addition, power lines and signal lines are routed and wired, as well as gate wiring and source wiring in the drive circuit section, and The gate and source wiring of the element are the same as the gate electrode and source electrode (drain electrode). They are often formed using translucent materials.

[0006] However, typically indium tin oxide (ITO) and indium zinc oxide (IZO) are used. ), and other light-transmitting conductive materials such as indium tin zinc oxide (ITZO) are aluminum Aluminum (Al), Molybdenum (Mo), Titanium (Ti), Tungsten (W), Neodymium ( Compared to conductive materials with light-shielding and reflective properties such as Nd, copper (Cu), and silver (Ag), The resistance is low. Therefore, a transparent conductive material is used to route the cable from the FPC terminal, etc. When routing power lines, signal lines, and other wiring, or forming wiring for drive circuits, the wiring resistance becomes high. This happens. In particular, the drive circuit section requires high-speed operation, so if the wiring resistance becomes high, The waveform of the signal propagating through the wiring becomes distorted, hindering the high-speed operation of the drive circuit. Therefore, it becomes difficult to supply accurate voltage and current, and the pixel area does not display correctly. It becomes difficult to perform actions or movements.

[0007] On the other hand, the gate electrode and source electrode (drain electrode) of the drive circuit section are made of a light-shielding conductive material. When formed from a material, and the gate wiring and source wiring are also formed from a light-shielding conductive material: Therefore, the conductivity of the wiring is improved, and power lines and signal lines routed from FPC terminals etc. This can suppress the increase in wiring resistance in routed wiring and the distortion of the signal waveform in the drive circuit section. Furthermore, the gate electrode and source electrode (drain electrode) of the pixel section are made of a light-transmitting material. By forming it in this way, the aperture ratio can be improved and power consumption can be reduced.

[0008] Furthermore, in terms of display performance, pixels should have a large retention capacity, and the aperture ratio should be increased. This is in demand. By achieving a high aperture ratio for each pixel, the light utilization efficiency is improved, and the display device becomes more efficient. Miniaturization and power supply can be achieved. In recent years, pixel size has been miniaturized, resulting in higher resolution images. This is what is needed. However, as pixel size becomes smaller, the thin film transients in each pixel Because the area for forming the diaphragm and wiring increases, the pixel aperture ratio decreases. Therefore, the specified pixel size In order to obtain a high aperture ratio for each pixel within the pixel, the circuit elements required for the pixel circuit configuration must be efficiently arranged. It is essential to lay it out carefully.

[0009] Furthermore, in thin-film transistors using a translucent semiconductor layer, the characteristics of the thin-film transistor are... Because it was prone to becoming normally-on and the threshold voltage was unstable, especially in the drive circuit section... High-speed operation was difficult.

[0010] One aspect of the present invention aims to reduce the manufacturing cost of semiconductor devices.

[0011] One aspect of the present invention aims to improve the aperture ratio of the pixel portion.

[0012] One aspect of the present invention aims to increase the resolution of the pixel portion.

[0013] One aspect of the present invention addresses the issue of improving the operating speed in the drive circuit section. .

[0014] One aspect of the present invention aims to improve the reliability of semiconductor devices. [Means for solving the problem]

[0015] One aspect of the present invention is a pixel portion having a first thin-film transistor and a second thin-film transistor A drive circuit section having a gate electrode (gate electrode layer and) of a first thin-film transistor. (also called), source electrode (also called source electrode layer), and drain electrode (drain electrode layer and Each of these (also known as) is translucent, and the resistance value of the gate electrode layer of the second thin-film transistor is The resistance of the gate electrode layer of the first thin-film transistor is lower than that of the second thin-film transistor. - The resistance of the electrode layer is lower than the resistance of the source electrode layer of the first thin-film transistor, and the second The resistance of the drain electrode layer of the thin-film transistor is the drain electrode of the first thin-film transistor. This is a semiconductor device or a method for manufacturing the same, with a resistance value lower than that of the polar layer.

[0016] Furthermore, oxide semiconductors used in this specification are denoted as InMO3(ZnO)m (m>0). A thin film is formed, and a thin-film transistor is fabricated using this thin film as an oxide semiconductor layer. M is one or more metallic elements selected from Ga, Fe, Ni, Mn, and Co. This indicates a metallic element. For example, M can be Ga, or Ga and Ni, or Ga and In addition, the above oxide semiconductor may contain metal elements other than Ga, such as Fe. In addition to the metallic elements included as M, Fe, Ni, and other transition metals are included as impurity elements. Some contain elements or oxides of the transition metal. In this specification, In Among oxide semiconductor layers with a structure represented as MO3(ZnO)m (m>0), where M is Ga Oxide semiconductors with a structure containing are called In-Ga-Zn-O based oxide semiconductors, and their thin films are called I It is also called an n-Ga-Zn-O non-single crystal film.

[0017] In addition to the above, other metal oxides that can be applied to oxide semiconductor layers include In-Sn-Zn-O In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga-Zn-O system, Sn -Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Zn-O series, In- O-based, Sn-O-based, and Zn-O-based metal oxides can be applied. Silicon oxide may be included in the oxide semiconductor layer made of the material.

[0018] The oxide semiconductor is preferably an oxide semiconductor containing In, more preferably In, and It is an oxide semiconductor containing Ga. To make the oxide semiconductor layer type I (intrinsic), dehydration is performed. Hydrogenation or dehydrogenation is effective.

[0019] In this specification, a semiconductor device refers to a device that can function by utilizing semiconductor properties. In general, display devices, semiconductor circuits, and electronic devices are all semiconductor devices. [Effects of the Invention]

[0020] According to one aspect of the present invention, the operating speed of the drive circuit can be improved, and the aperture ratio of the pixel portion can be increased. It can be improved. Furthermore, according to one aspect of the present invention, the number of manufacturing steps can be reduced. This can reduce manufacturing costs. Furthermore, one aspect of the present invention involves increasing the resolution of the pixel portion. It is possible to do so. Furthermore, one aspect of the present invention can improve the reliability of semiconductor devices. Cut. [Brief explanation of the drawing]

[0021] [Figure 1] A top view and a cross-sectional view of a semiconductor device according to one aspect of the present invention. [Figure 2] A top view and a cross-sectional view of a semiconductor device according to one aspect of the present invention. [Figure 3] A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 4] A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 5] A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 6] A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 7] A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 8] A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 9] A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 10] A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 11] A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 12] A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 13] A top view and a cross-sectional view of a semiconductor device according to one aspect of the present invention. [Figure 14] A top view and a cross-sectional view of a semiconductor device according to one aspect of the present invention. [Figure 15] A top view and a cross-sectional view of a semiconductor device according to one aspect of the present invention. [Figure 16] A diagram illustrating a multi-level mask applicable to one aspect of the present invention. [Figure 17] A top view and a cross-sectional view of a semiconductor device according to one aspect of the present invention. [Figure 18] A cross-sectional view of a semiconductor device according to one aspect of the present invention. [Figure 19] A cross-sectional view of a semiconductor device according to one aspect of the present invention. [Figure 20] A cross-sectional view of a semiconductor device according to one aspect of the present invention. [Figure 21] A top view and a cross-sectional view of a semiconductor device according to one aspect of the present invention. [Figure 22] Circuit diagram of a semiconductor device according to one aspect of the present invention. [Figure 23] A diagram illustrating an electronic device using a display device according to one aspect of the present invention. [Figure 24] A diagram illustrating an electronic device using a display device according to one aspect of the present invention. [Figure 25]Circuit diagram and timing chart of a semiconductor device according to one aspect of the present invention. [Figure 26] Circuit diagram and timing chart of a semiconductor device according to one aspect of the present invention. [Figure 27] A diagram illustrating the potential of a display element in a semiconductor device according to one aspect of the present invention. [Figure 28] A diagram illustrating the display screen of a semiconductor device according to one aspect of the present invention. [Figure 29] A diagram illustrating an electronic device using a display device according to one aspect of the present invention. [Figure 30] A diagram illustrating an electronic device using a display device according to one aspect of the present invention. [Figure 31] A diagram illustrating an electronic device using a display device according to one aspect of the present invention. [Figure 32] A top view and a cross-sectional view of a semiconductor device according to one aspect of the present invention. [Modes for carrying out the invention]

[0022] The embodiments of the present invention will be described below with reference to the drawings. However, in many aspects, the present invention It is possible to implement this invention, and its form may be adapted without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the details can be changed in various ways. The description of the present invention is not limited to the content of the statement. In this context, identical parts or parts having similar functions are indicated using common reference numerals across different drawings. Detailed descriptions of identical or similarly functioning parts are omitted.

[0023] (Embodiment 1) This embodiment describes a semiconductor device that is one aspect of the present invention.

[0024] The structure of a semiconductor device according to one aspect of the present invention will be described with reference to Figure 1 and Figure 2. Figure 1( Figure A) is a top view showing an example of a semiconductor device according to this embodiment, and shows the drive circuit section. The AB section of 1(B) is a cross-sectional view of the line segment AB in Figure 1(A), and the section of Figure 1(C) The cross-section of CD is the cross-section along the line segment CD in Figure 1(A). Also, Figure 2(A) is this This is a top view showing an example of a semiconductor device according to the embodiment, and the pixel portion is shown in Figure 2(B) E- Section F is a cross-sectional view along line segment EF in Figure 2(A), and section GH in Figure 2(C) is This is a cross-sectional view along the line segment GH in Figure 2(A).

[0025] As shown in Figures 1 and 2, the semiconductor device of this embodiment has a first thin-film transistor The structure has a drive circuit and a pixel section having a second thin-film transistor on the same substrate. Yes, there is. Furthermore, the semiconductor device shown in Figures 1 and 2 will be described below.

[0026] Figure 1 shows a part of the drive circuit. The drive circuit shown in Figure 1 is arranged in a first direction. The gate wiring and retaining capacitance lines are in a direction different from the first direction, and the gate wiring and retaining Source wiring positioned in a second direction intersecting the capacitance line, and the intersection of gate wiring and source wiring. Includes thin-film transistors near the part. Figure 2 shows a part of the pixel area. Pixel shown in Figure 2 The part includes gate wiring and retaining capacitance wires arranged in a first direction, and gate wiring and retaining capacitance wires Source wiring arranged in a second intersecting direction, and near the intersection of gate wiring and source wiring It has a thin-film transistor.

[0027] The thin-film transistor 130A in the drive circuit shown in Figure 1 is a channel-etch type thin-film transistor. A substrate 101 having an insulating surface is used as a gate electrode layer or gate wiring. Lamination of conductive layers 107a and 110a having the function of a gate insulating layer An insulating film 111, a semiconductor layer 113a having a channel formation region, and a source electrode layer or Lamination of conductive layers 119a and 120a that function as source wiring, and drain The present invention includes a lamination of conductive layers 119b and 120b, which function as electrode layers.

[0028] The conductive layer 110a is provided on a portion of the conductive layer 107a, and has a smaller area than the conductive layer 107a. Furthermore, the conductive layer 110b is provided on a part of the conductive layer 107b, and the conductive layer 107b The surface area is small. In other words, the edge of conductive layer 107a protrudes more than the edge of conductive layer 110a. Furthermore, the edge of conductive layer 107b protrudes more than the edge of conductive layer 110b. The area of ​​conductive layer 110a and conductive layer 110b is equal to the area of ​​conductive layer 110a and conductive layer 110b It is larger than the area each of them possesses.

[0029] The conductive layer 120a is provided on a portion of the conductive layer 119a, and has a smaller area than the conductive layer 119a. Furthermore, the conductive layer 120b is provided on a portion of the conductive layer 119b. The area is smaller. That is, the edge of conductive layer 119a protrudes more than the edge of conductive layer 120a. Furthermore, the edge of conductive layer 119b protrudes more than the edge of conductive layer 120b. The area of ​​each of the layers 119a and 119b is the area of ​​the conductive layer 120a and conductive layer 120 It is larger than the area each of b possesses.

[0030] The conductive layers 110a, 120a, and 120b are, for example, used to reduce the resistance of the wiring. It is preferable to use a metal material for this purpose.

[0031] The gate wiring of the drive circuit section is constructed by laminating conductive layer 107a and conductive layer 110a. The source wiring that is electrically connected to the source electrode layer or drain electrode layer of a thin-film transistor is Lamination of conductive layer 119a and conductive layer 120a, or conductive layer 119b and conductive layer 120b It is constructed by layering. In other words, the gate electrode layer of a thin-film transistor constitutes the gate wiring. It is formed in part of the laminate of conductive layer 107a and conductive layer 110a, and the source electrode layer or The drain electrode layer is a laminate of conductive layer 119a and conductive layer 120a that constitute the source wiring. Alternatively, it is formed as part of the laminate of conductive layer 119b and conductive layer 120b.

[0032] In this specification, when it is explicitly stated that X and Y are connected, X and When Y is electrically connected, when X and Y are functionally connected, and when X and This includes the case where Y is directly connected. Here, X and Y are objects (for example) (This refers to devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.) This includes not only fixed connection relationships, such as those shown in a diagram or text, but also those shown in a diagram or text. This includes connections other than those indicated.

[0033] Furthermore, terms such as "1st," "2nd," and "3rd" refer to various elements, components, areas, layers, zones, etc. These terms are used to distinguish and describe elements. Therefore, terms such as "first," "second," and "third" refer to elements and components. This does not limit the order or number of regions, layers, areas, etc. Furthermore, for example, "the It is possible to replace "1st" with "2nd" or "3rd," etc.

[0034] Furthermore, the thin-film transistor 130A in the drive circuit section has a channel formation region as shown in Figure 1. A second gate electrode layer (back) is formed above by conductive layer 400a and conductive layer 401a. It may also include a gate electrode layer (also called a back gate electrode layer). By electrically connecting them and making them at the same potential, the gap between the lower gate electrode layer and the back gate electrode layer is created. A gate voltage can be applied to the semiconductor layer positioned above from above and below. Also, the gate voltage of the lower layer The electrode layer and the back gate electrode layer are at different potentials, for example, the back gate electrode layer is at a fixed potential. When the ground potential (also called GND) is set to 0V, the electrical characteristics of the TFT, such as the threshold voltage, must be considered. Pressure and other parameters can be controlled. That is, the lamination of conductive layer 107a and conductive layer 110a The conductive layer 400a and conductive layer 401a are stacked to function as the first gate electrode layer. By making it function as a gate electrode layer, the thin-film transistor 130A becomes a 4-terminal thin-film transistor It can be used as a ZISTA.

[0035] Furthermore, the drive circuit shown in Figure 1 consists of a conductive layer 400a, a semiconductor layer 113a, and a conductive layer 119a. The conductive layer 119b, conductive layer 120a, and conductive layer 120b are separated by an insulating layer 123.

[0036] The insulating layer 123 can be, for example, a single layer or a multilayer of insulating film.

[0037] Furthermore, an oxide insulating film can be provided between the insulating layer 123 and the semiconductor layer 113a. By providing a material insulating film, the carrier concentration in the semiconductor layer can be reduced.

[0038] Furthermore, the thin-film transistor 130B of the pixel shown in Figure 2 is located on the substrate 101 which has an insulating surface. , a conductive layer 107e having the function of a gate electrode layer or gate wiring, and a gate insulating layer , a semiconductor layer 113e having a channel formation region, and a source electrode layer or source wiring A conductive layer 119h that has a function and a conductive layer 119e that has a function as a drain electrode layer , including.

[0039] The conductive layer 107e, semiconductor layer 113e, conductive layer 119e, and conductive layer 119h have light-transmitting properties. It can be constructed using materials that it possesses. This allows all of the thin-film transistors 130B to be constructed. This can be fabricated using a translucent material.

[0040] In this specification, a light-transmitting layer or film is defined as having a visible light transmittance of 75-100%. This refers to a film or layer that is transparent, and if the film or layer is conductive, it refers to a conductive film or It is also called the conductive layer. It is also referred to as the gate electrode layer, source electrode layer, drain electrode layer, pixel electrode, and As a metal oxide applied to other electrodes and other wiring, it is semi-transparent to visible light. A conductive film may be used. Semi-transparent to visible light means that the transmittance of visible light is 50-75%. It refers to doing something.

[0041] For example, an oxide semiconductor can be used as the semiconductor layer 113a or semiconductor layer 113e. Oxide semiconductors can be inert to nitrogen or noble gases (argon, helium, etc.). When heat treatment is performed under a gaseous atmosphere or under reduced pressure, the oxide semiconductor layer is affected by the heat treatment. This results in an oxygen-deficient type with reduced resistance, i.e., N-type (N - (e.g., chemicalization), and then oxide semiconductor By forming an oxide insulating film in contact with the layer and creating an oxygen-rich state in the oxide semiconductor layer, high It can be made resistive, or type I. This results in a thin tube with good electrical characteristics and high reliability. It becomes possible to fabricate and provide semiconductor devices having film transistors.

[0042] Dehydration or dehydrogenation is performed using nitrogen or an inert gas such as a noble gas (argon, helium, etc.). Under ambient temperature or reduced pressure, the temperature should be 350°C or higher, preferably 400°C or higher, below the substrate's strain point. This process involves heat treatment to reduce impurities such as moisture contained in the oxide semiconductor layer.

[0043] Dehydration or dehydrogenation is performed on the oxide semiconductor layer after dehydration or dehydrogenation using TDS 4 Even when measurements are taken up to 50°C, there are two peaks for water, and at least one peak that appears around 300°C. The heat treatment conditions should be such that no traces are detected. Therefore, dehydration or dehydrogenation is performed. Even when measuring up to 450°C with TDS for thin-film transistors using oxide semiconductor layers, No water peaks, which typically appear around 300°C, are detected.

[0044] Then, the temperature is lowered from the heating temperature T used for dehydration or dehydrogenation of the oxide semiconductor layer. When doing so, use the same furnace that performed the dehydration or dehydrogenation, and do not expose it to the atmosphere, and add water or hydrogen. It is important to prevent further contamination. Dehydration or dehydrogenation is performed to reduce the oxide semiconductor layer. Resistance modification, i.e., N-type modification (N - After processing (such as chemicalization), the oxide semiconductor layer is made into a type I layer by increasing its resistance. When a thin-film transistor is fabricated using this method, the threshold voltage value of the thin-film transistor becomes positive. This makes it possible to realize a so-called normally-off switching element. Thin film transistor The gate voltage of the terminal is as close as possible to 0V when a positive threshold voltage is used to form the channel. It is preferable for display devices. Furthermore, if the threshold voltage value of the thin-film transistor is negative, Even when the gate voltage is 0V, current flows between the source electrode layer and the drain electrode layer; this is known as a normally occurring current. - It is prone to turning on. In active matrix type display devices, the thin components that make up the circuit The electrical characteristics of film transistors are crucial, and these characteristics determine the performance of the display device. Among the electrical characteristics of thin-film transistors, the threshold voltage (Vth) is important. Even if the fruit mobility is high, if the threshold voltage is high, or if the threshold voltage is negative, It is difficult to control as a circuit. The threshold voltage value is high, and the absolute value of the threshold voltage In the case of large thin-film transistors, when the driving voltage is low, the switching as a TFT It may fail to perform its function and become a load. (n-channel thin-film transistor) In this case, a channel is formed only when a positive voltage is applied to the gate voltage, and the drain current A thin-film transistor from which the current flows is preferred. If the driving voltage is not high enough, a channel will not form. Thin-film transistors, and thin films that form channels and allow drain current to flow even in negative voltage conditions. Thin-film transistors are unsuitable for use in circuits.

[0045] Furthermore, the gas atmosphere used to lower the temperature from heating temperature T is different from the gas atmosphere used to raise the temperature to heating temperature T. The atmosphere may be switched to a gaseous atmosphere. For example, in the same furnace where dehydration or dehydrogenation has been performed, the atmosphere may be switched to air. Without allowing contact, the furnace is cooled by filling it with high-purity oxygen gas or N2O gas. .

[0046] After reducing the moisture content in the membrane by heat treatment that involves dehydration or dehydrogenation, the moisture content is reduced. Slow cooling (or cooling) in an atmosphere where there is no dew (dew point of -40°C or lower, preferably -60°C or lower). Using the oxide semiconductor film, the electrical characteristics of thin-film transistors are improved, and mass production is also possible. To realize thin-film transistors that possess both low performance and high efficiency.

[0047] In this specification, under an inert gas atmosphere of nitrogen or a noble gas (argon, helium, etc.), Alternatively, heat treatment under reduced pressure is referred to as heat treatment for dehydration or dehydrogenation. In this specification In this case, the term "dehydrogenation" simply refers to the process of removing H2 through this heat treatment. It is not just about the removal of H, OH, etc., but is conveniently referred to as dehydration or dehydrogenation. Let's assume that.

[0048] Under an inert gas atmosphere of nitrogen or a noble gas (argon, helium, etc.), or under reduced pressure When heat treatment is performed, the oxide semiconductor layer becomes oxygen-deficient due to the heat treatment, resulting in low resistance. , in other words, N-type (N - (e.g., chemical transformation). Afterwards, the region overlapping with the source electrode layer becomes oxygen-deficient. It is formed as a high-resistance source region (also called the HRS region) and overlaps with the drain electrode layer. This region is formed as an oxygen-deficient high-resistance drain region (also called the HRD region). For example, in the thin-film transistor shown in Figure 1, the semiconductor layer 1 overlaps the conductive layer 119a. A high-resistance source region can also be formed in region 13a, and the semiconductor overlaps with the conductive layer 119b. A high-resistance drain region can also be formed in the region of layer 113a. Furthermore, the thin film shown in Figure 2... In a transistor, a high-resistance source is present in the region of the semiconductor layer 113e that overlaps with the conductive layer 119e. It is also possible to form a region, and a high-resistance region of the semiconductor layer 113e overlapping the conductive layer 119h It is also possible to form a rain region.

[0049] The carrier concentration in the high-resistance source region or high-resistance drain region is 1 × 10⁻⁶ 17 / cm 3 That's all. It is within the range and the carrier concentration in the channel formation region is at least (1 × 10⁻¹⁰ 17 / cm 3 not It is a region higher than (the carrier concentration of the high-resistance drain region (HRD region) is lower than, for example, 1 × 10 20 / cm 3 ). Note that the carrier concentration in this specification refers to the value of the carrier concentration obtained from Hall effect measurement at room temperature.

[0050] Also, a low-resistance source region (also referred to as an LRS region) and a low-resistance drain region (also referred to as an LRD region) may be formed between the oxide semiconductor layer and the drain electrode layer made of a metal material. The carrier concentration of the low-resistance drain region is larger than that of the high-resistance drain region (HRD region), for example, in the range of 1 × 10 21 / cm 3 or more and 1 × 10 20 / cm 3 or less. In the semiconductor device of this embodiment, the conductive layer 119a shown in FIG. 1 corresponds to the low-resistance source region, and the conductive layer 119b corresponds to the low-resistance drain region. For example, 1×10 20 / cm 3 or more and 1×10 21 / cm 3 or less. In the semiconductor device of this embodiment, the conductive layer 119a shown in FIG. 1 corresponds to the low-resistance source region, and the conductive layer 119b corresponds to the low-resistance drain region.

[0051] Then, at least a part of the dehydrated or dehydrogenated oxide semiconductor layer is made to be in an oxygen-excess state to increase the resistance, that is, to be type-I and form a channel formation region. Note that, as the treatment for making a part of the dehydrated or dehydrogenated oxide semiconductor layer be in an oxygen-excess state, there are: film formation of an oxide insulating film by sputtering method on the dehydrated or dehydrogenated oxide semiconductor layer, heat treatment after film formation of the oxide insulating film, heat treatment in an oxygen-containing atmosphere after film formation of the oxide insulating film, treatment of cooling in an oxygen atmosphere after heating in an inert gas atmosphere after film formation of the oxide insulating film, treatment of cooling with ultra-dry air (dew point is -40°C or lower, preferably -60°C or lower) after heating in an inert gas atmosphere after film formation of the oxide insulating film, etc.

[0052] Also, at least a part of the dehydrated or dehydrogenated oxide semiconductor layer (gate electrode (gate​​​​​​​​​​ By selectively creating an oxygen-rich state in the area overlapping with the electrode layer, resistance is increased. In other words, it can be converted to type I. This allows for the formation of a channel-forming region. For example, a metal electrode such as Ti is in contact with a dehydrated or dehydrogenated oxide semiconductor layer. Form a source electrode layer and a drain electrode layer that do not overlap the source electrode layer and the drain electrode layer. By selectively creating an oxygen-rich state in the exposed region, it is possible to form a channel-forming region. When selectively creating an oxygen-rich state, a high-resistance source region overlapping the source electrode layer and the drain A high-resistance drain region is formed that overlaps the electrode layer, and a high-resistance source region and a high-resistance drain are formed. The region between the regions becomes the channel-forming region. That is, the channel-forming region extends to the source electrode layer. It is formed self-aligned between the drain electrode layer.

[0053] This allows for the fabrication of semiconductor devices with thin-film transistors that exhibit good electrical characteristics and high reliability. And it becomes possible to provide it.

[0054] Furthermore, in the oxide semiconductor layer superimposed on the drain electrode layer (and source electrode layer), high resistance By forming a rain region, the reliability of the drive circuit can be improved. Specifically, by forming a high-resistance drain region, the high-resistance drain electrode layer can be separated from the drain electrode layer. The structure is designed to allow for a stepwise change in conductivity from the rain region to the channel formation region. Therefore, the drain electrode layer is connected to the wiring that supplies the high power potential VDD. When operated in this manner, even if a high electric field is applied between the gate electrode layer and the drain electrode layer, the resistance remains high. The drain region acts as a buffer, preventing a localized high electric field from being applied, thus maintaining the breakdown voltage of the thin-film transistor. This allows for an improved configuration.

[0055] Furthermore, in the oxide semiconductor layer superimposed on the drain electrode layer (and source electrode layer), high resistance By forming a rain region (or high-resistance source region), when forming a drive circuit... This can reduce leakage current in the channel formation region. Specifically, high-resistance drain By forming a drain region (or high-resistance source region), the drain electrode layer and the source electrode layer The path of the leakage current flowing between the thin-film transistor layers is the drain electrode layer, and the drain electrode layer is also considered. High-resistance drain region on the polar layer side, channel formation region, high-resistance source region on the source electrode layer side, The order is source electrode layer. At this time, in the channel formation region, the low resistance drain electrode layer The leakage current flowing from the rain region to the channel formation region is increased when the thin-film transistor is off. The resistance can be concentrated near the interface between the gate insulating layer and the channel formation region, and back Leakage current in the channel region (a part of the surface of the channel formation region that is separate from the gate electrode layer) The flow can be reduced.

[0056] Furthermore, there is a high-resistance source region that overlaps the source electrode layer and a high-resistance drain region that overlaps the drain electrode layer. By forming the region so as to overlap with a part of the gate electrode layer, drain electricity more effectively. This can reduce the electric field strength near the edges of the polar layers.

[0057] The gate wiring that is electrically connected to the gate electrode layer of the thin-film transistor 130B in the pixel area is It is formed of a conductive layer 107e and is the source electrode of the thin-film transistor 130B in the pixel area. Source wiring electrically connected to the layer or drain electrode layer is conductive layer 119e or conductive layer It is formed at 119h. In other words, the gate electrode layer of thin-film transistor 130B is formed at 119h. It is formed in part of the conductive layer 107e that constitutes the wiring, and is the source electrode layer or drain. The electrode layer is composed of a portion of the conductive layer 119e or 119h that constitutes the source wiring.

[0058] Furthermore, wiring that functions as a gate electrode layer is wiring that functions as a gate wiring (and (This includes at least one layer of wiring that functions as gate wiring) and is connected to It can also be considered that at least one layer of the gate wiring is gate wiring It is formed in a state where the area is larger than that of other layers that the line has, and at least one of the layers with a larger area This part can be thought of as functioning as a gate electrode layer.

[0059] Furthermore, at least a portion of the gate wiring is part of the gate electrode layer or as part of the gate electrode layer. It can also be considered that it is possible. Alternatively, the gate wiring of the pixel section, or a part of the gate wiring and It functions as a gate electrode layer or as part of the gate electrode layer of a thin-film transistor. On top of the conductive layer that functions, the gate wiring of the drive circuit section or as part of the gate wiring is mainly used. It can also be said that a conductive layer capable of performing certain functions is provided.

[0060] Furthermore, it functions as source wiring, including the source electrode layer of the thin-film transistor in the pixel section. The wiring functions as source wiring, including the source electrode layer of the thin-film transistor in the drive circuit section. Wiring (or source wiring including the source electrode layer of the thin-film transistor in the drive circuit section) It can also be thought of as being connected to at least one layer of the wiring that is capable of performing the function. In other words, a portion of the source wiring of the drive circuit is within the source electrode layer or pixel section of the drive circuit. It can be thought of as functioning as part of the source electrode layer within the pixel. On top of a conductive layer that primarily functions as part of the source electrode layer or source electrode layer, the drive circuit section This means that a conductive layer is provided, which primarily functions as part of the wiring or source wiring. It's also possible.

[0061] Furthermore, the thin-film transistor 130B in the pixel area is located above the channel formation region in the conductive layer 400e. It can also include a second gate electrode layer (also called a back gate electrode layer) composed of the same elements. By electrically connecting the back gate electrode layer to the lower gate electrode layer and making them at the same potential, the lower A gate voltage is applied from above and below to the semiconductor layer placed between the gate electrode layer and the back gate electrode layer of the layer. A voltage can be applied. Furthermore, the lower gate electrode layer and the back gate electrode layer can be brought to different potentials. For example, if the back gate electrode layer is set to a fixed potential, GND, 0V, the electrical characteristics of the TFT It is possible to control properties such as threshold voltage.

[0062] Furthermore, the pixel portion shown in Figure 2 consists of a conductive layer 107g that functions as a lower electrode and a dielectric layer that functions as a dielectric. An insulating film 111 having the function of a gate insulating layer, and a conductive film having the function of an upper electrode. It has a holding capacity composed of a layer 119g, and the conductive layer 107g and conductive layer 119g A retention capacitance line is formed. Furthermore, a conductive layer 400e, a semiconductor layer 113e, and a conductive layer 11 An insulating layer 122 is provided between 9h and 119e. The insulating layer 122 is the same as the insulating layer 123 in Figure 1. Since they are similar, the explanation will be omitted.

[0063] Since conductive layers 107g and 119g are formed using a light-transmitting material, At least a portion of either the electrolytic layer 107g or the conductive layer 119g is a capacitive wiring (capacitive It functions as part of a capacitance wiring layer (also called a capacitance wiring layer) or a portion of either the other or a portion of the other. However, it can function as an electrode of a capacitive element, or as part of an electrode of a capacitive element. Figure 2 illustrates the case where a capacitive element is provided in the pixel area, but it is not limited to this. Capacitive elements can also be provided in the drive circuit section. For example, a transparent conductive layer and a transparent A region in which a conductive layer with a lower resistance value than a conductive layer having the properties of a conductive layer is superimposed, and the conductive layer having light transmission If the conductive layer with a lower resistance than the electrical layer is a light-shielding conductive layer, then in the drive circuit section... Therefore, at least a portion of either conductive layer 107g or conductive layer 119g is capacitance-distributed. It is preferable that it functions as part of a wire or capacitive wiring. Furthermore, a light-shielding conductive layer is In regions where a conductive layer is not present and has a light-transmitting properties, within the pixel area, the conductive layer 107 At least a portion of either g or the conductive layer 119g is an electrode of a capacitive element, It is preferable that it functions as part of the electrodes of a capacitive element.

[0064] Furthermore, in the semiconductor device of this embodiment, the wiring that functions as an electrode for a capacitive element is a capacitance Wiring that functions as wiring (or at least one of the wirings that functions as capacitive wiring) It can also be thought of as being connected to the layer of . Alternatively, the capacitive wiring has less Each layer is formed with a larger area than the other layers of the capacitive wiring, and the area It can be thought that a portion of the enlarged region functions as an electrode for a capacitive element. Furthermore, the transparent conductive layer is formed in a state where its surface area is larger than that of the light-shielding conductive layer. Therefore, it is thought that a portion of the large area of ​​the conductive layer functions as an electrode for a capacitive element. This is possible. In addition, at least a portion of the capacitive wiring within the pixel area is the electrode or capacitive element of the capacitive element. It can be thought of as functioning as part of the child electrode. Alternatively, it can be thought of as having a small capacity in the capacitive wiring. At the very least, one layer can be considered to function as an electrode for a capacitive element. Or, It can be considered that a portion of the light-transmitting conductive layer functions as an electrode for a capacitive element. Furthermore, conductive elements within the pixel area primarily function as electrodes of capacitive elements or as part of the electrodes of capacitive elements. A conductive layer is provided on top of the layer, which primarily functions as a capacitive wiring or part of the capacitive wiring of the drive circuit section. It can also be considered that this is the case.

[0065] Furthermore, the light-shielding conductive layer and the light-transmitting conductive layer mainly consist of a portion of their respective regions (mainly The area of ​​the light-shielding conductive layer is the capacitive wiring or drive circuit section routed from the FPC. It functions as part of the capacitance wiring, and in a separate area (an area that is only a transparent conductive layer). ) can function as an electrode of a capacitive element in the pixel section, or as part of the electrode of a capacitive element. Therefore, in the region where the light-shielding conductive layer and the light-transmitting conductive layer overlap, the conductive Since it may have a conductive layer with a high ratio (low resistance) and light-shielding properties, the region It is preferable to have it function as capacitive wiring routed from the FPC or as part of capacitive wiring. i. Or, a transparent conductive material in a region where a light-shielding conductive layer is not provided. The layer preferably functions as an electrode of a capacitive element within the pixel, or as part of the electrode of a capacitive element. It seems so.

[0066] Furthermore, when fabricating a thin-film transistor on a gate circuit, the size of the thin-film transistor is: Although it depends on the gate wiring width of the thin-film transistor, in this embodiment, a thin-film transistor is placed inside the pixel. To form a zista, a large thin-film transistor can be formed. Not limited to, for example, thin-film transistors with a gate trace width greater than that shown in Figure 32. This allows for the fabrication of thin-film transistors. By increasing the size of the thin-film transistor, its current capacity can be increased to its full potential. This allows for a reduction in the time required to write signals to pixels, thus enabling high-resolution imaging. It can provide a detailed display device.

[0067] Furthermore, the holding capacitance section uses an insulating film that functions as a gate insulating film as the dielectric, and the lower electrode is... It is composed of a conductive layer that has light-transmitting properties and functions accordingly. Therefore, the holding capacitance part is, By constructing it with a light-transmitting conductive layer, the aperture ratio can be improved. Furthermore, By constructing the retention capacity section using a light-transmitting conductive layer, the retention capacity section can be enlarged. Therefore, even when the thin-film transistor is turned off, the potential of the pixel electrode is maintained. It becomes easier to maintain. Also, the feedthrough potential can be reduced.

[0068] As described above, the semiconductor devices shown in Figures 1 and 2 each have thin-film transients on the same substrate. The drive circuit section and the pixel section have a transistor, and the gate electrode layer of the thin-film transistor in the pixel section and The source electrode layer is constructed using a transparent conductive layer, and the semiconductor layer is made of a transparent semiconductor It is constructed using conductive materials, and is used for the gate electrode layer and source electrode of the thin-film transistor in the drive circuit. The polar layer is constructed using a conductive layer with a lower resistance value than the transparent conductive layer. This structure allows for an improvement in the aperture ratio in the pixel area, and also enables high-resolution imaging. This allows for a reduction in wiring resistance in the drive circuit section, resulting in a more efficient signal waveform. This suppresses stagnation and other issues, reduces power consumption, and improves operating speed. This is possible. Furthermore, the larger the size of the semiconductor device, the greater the effect of wiring resistance. Therefore, the structure of the semiconductor device in this embodiment is suitable when the semiconductor device is to be enlarged. It is also preferable to leave it there.

[0069] Furthermore, the semiconductor device shown in Figures 1 and 2 has light-transmitting electrodes and wiring for the capacitance holding portion of the pixel. The structure can also be made using a conductive layer. By using this structure, the opening The ratio can be improved, and even when the area of ​​the holding capacity is large, the opening ratio It is possible to suppress the decline.

[0070] Furthermore, the semiconductor device shown in Figures 1 and 2 has wiring for power lines and signal lines in the pixel section, and The source wiring and power supply of the drive circuit are constructed using a light-transmitting conductive layer. Wiring for wires, signal lines, gate wiring, and source wiring are separated from a transparent conductive layer. It is also possible to create a structure using a conductive layer with low resistance. This suppresses distortion of the signal waveform, reduces power consumption, and also improves operation. It can improve speed.

[0071] Furthermore, the semiconductor device shown in Figures 1 and 2 is light-transmitting and has thin-film transistors in the pixel portion. A conductive layer overlapping the channel formation region, and a conductive material with lower resistance than a light-transmitting conductive material. It is constructed using a material and overlaps with the channel formation region of the thin-film transistor in the drive circuit section. It can also be a structure having an electrical layer. The conductive layer provided in the pixel section and the drive circuit section. (The conductive layer overlapping the channel formation region) is a thin film transient of the pixel portion or the drive circuit portion, respectively. This is a conductive layer that can function as the second electrode (back gate electrode layer) of the sta. The conductive layer is not necessarily required, but by providing a back gate electrode layer, a thin This allows for control of the threshold voltage of thin-film transistors, improving their reliability. It is possible.

[0072] Next, an example of a method for manufacturing a semiconductor device according to this embodiment is shown using Figures 3 to 12. Figures 3, 5, 7, 9, and 10 show cross-sections of line segment AB of the drive circuit shown in Figure 1. Furthermore, Figures 4, 6, 8, 11, and 12 show the line segment EF of the pixel area shown in Figure 2. Figures 3, 5, 7, 9, and 10 show the source wiring section 301, thin Figures 4, 6, 8, and 11 show the film transistor section 302 and the gate wiring section 303. Figure 12 shows the source wiring section 331, the thin-film transistor section 332, and the gate wiring section 333. This shows the holding capacity section 334. Note that the manufacturing method shown in Figures 3 to 12 is just one example. The following describes a fabrication method using a multi-gradation mask, but it is not limited to this method.

[0073] First, as shown in Figures 3(A) and 4(A), a conductive film 102 and a conductive film are placed on the substrate 101. 103 is layered and formed by sputtering. This process can be carried out continuously. Furthermore, it is also possible to perform continuous sputtering using a multi-chamber system. By forming conductive film 102 and conductive film 103, throughput is improved, and impurities and This helps to prevent contamination by waste.

[0074] The substrate 101 is preferably made of a material with high light transmittance. For example, a glass substrate, plastic Plastic substrates, acrylic substrates, ceramic substrates, etc., can be used.

[0075] The light transmittance of the conductive film 102 is preferably sufficiently high. It is preferable that this value is higher than the light transmittance of the conductive film 103.

[0076] The conductive film 102 is a conductive material that is transparent to visible light, such as In-Sn-Zn-O In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga-Zn-O system, Sn -Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Zn-O series, In- It can be formed using O-based, Sn-O-based, and Zn-O-based metal oxides, and the metal oxides are For example, sputtering, vacuum deposition (such as electron beam deposition), and arc discharge ion It can be formed using the plating method or the spray method. Additionally, the sputtering method can be used. If present, film deposition is performed using a target containing 2% to 10% by weight of SiO2. SiO2 inhibits crystallization in light-transmitting conductive films. x (X>0) may also be included. Furthermore, if heat treatment is performed in a later step for dehydration or dehydrogenation, the metal oxide crystallizes. It is possible to suppress the transformation. In addition, multiple layers of films of the materials mentioned above can be used to guide It may also be an electrical film 102. When a laminated structure is used, the light transmittance of all of the multiple films is sufficient. A higher value is preferable.

[0077] It is preferable that the conductive film 103 has a sufficiently low resistance and a sufficiently high conductivity. The resistance value of 102 is preferably lower than the resistance value of the conductive film 103. However, the conductive film 1 Since 02 functions as a conductive layer, the resistance of the conductive film 102 is lower than the resistance of the insulating layer. It is preferable.

[0078] The conductive film 103 is made of molybdenum, titanium, chromium, tantalum, tungsten, and aluminum. Using metallic materials such as copper, neodymium, scandium, or alloy materials mainly composed of these materials Then, it is formed as a single-layer or multi-layer structure by sputtering or vacuum deposition. This is possible. Also, when the conductive film 103 is formed in a laminated structure, the permeability of one of the multiple films can be achieved. It may also contain a photosensitive conductive film.

[0079] Furthermore, if a conductive film 103 is formed on top of the conductive film 102, the two films will react with each other. This can happen. For example, the upper surface of the conductive film 102 (the surface in contact with the conductive film 103) is made of ITO In this case, the lower surface of the conductive film 103 (the surface in contact with the conductive film 102) is made of aluminum. In that case, a chemical reaction will occur. Therefore, to avoid this, the underside of the conductive film 103 It is preferable to use a high melting point material for the surface (the surface in contact with the conductive film 102). For example, high Examples of melting point materials include molybdenum (Mo), titanium (Ti), tungsten (W), and ne Examples include odium (Nd). And, on a film made of a high melting point material, a low resistance value is applied. It is preferable to use a material to form a multilayer conductive film 103. Examples include aluminum (Al), copper (Cu), and silver (Ag). For example, conductive When forming the film 103 in a layered structure, the first layer is molybdenum (Mo) and the second layer is aluminum. Aluminum (Al), with a third layer of molybdenum (Mo), or the first layer being molybdenum ( Mo) is the first layer, aluminum (Al) containing a small amount of neodymium (Nd) is the second layer, and molybdenum is the third layer. It can be formed by stacking den (Mo) layers.

[0080] Although not shown in the diagram, silicon oxide and nitride are used as underlayers between the substrate 101 and the conductive film 102. Silicon, silicon oxide nitride, etc. can also be formed. A substrate 101 and a transparent conductive film By forming a base film between them, mobile ions and impurities are spread from the substrate 101 to the element. This suppresses dispersion and prevents degradation of the element's characteristics.

[0081] Next, as shown in Figures 3(B) and 4(B), the drive circuit section is located on the conductive film 103. In the pixel area, a thick resist mask 106a, 106b is used. Compared to 106a and 106b, the resist masks 106e, 106f, and 106g have thinner film thicknesses. The resist masks 106a, 106b, 106e, 106f, and 106g are formed. For example, it can be formed using a multi-gradation mask, and by using a multi-gradation mask, A resist mask having regions of different thicknesses can be formed. Using a multi-gradation mask This reduces the number of photomasks used and decreases the number of manufacturing steps. In this state, the process involves forming patterns of conductive film 102 and conductive film 103, and the gate electrode layer In the process of forming a transparent conductive layer that functions as a light-transmitting layer, a multi-gradation mask is used. It is possible.

[0082] A multi-gradation mask is a mask that allows exposure at multiple levels of light intensity. Typical examples include: Exposure is performed using three levels of light intensity: exposed area, partially exposed area, and unexposed area. A multi-gradation mask is used. By doing so, multiple (typically two) thicknesses can be obtained through a single exposure and development process. A resist mask can be formed. Therefore, by using a multi-level mask, The number of masks required can be reduced.

[0083] Figures 16(A-1) and 16(B-1) show cross-sections of typical multi-level masks. (A-1) shows the gray tone mask 180, and Figure 16(B-1) shows the halftone Shows mask 185.

[0084] The gray tone mask 180 shown in Figure 16(A-1) is used to shield the light-transmitting substrate 181 from light. Light-shielding portion 182 formed by layers, and diffraction grating portion 1 provided by the pattern of the light-shielding layer It consists of 83.

[0085] The diffraction grating section 183 has slits and dots spaced at intervals less than or equal to the resolution limit of the light used for exposure. The amount of light transmitted is controlled by having a grating or mesh. The slits, dots, or mesh provided may be periodic or aperiodic. Something like that would be fine.

[0086] As the light-transmitting substrate 181, quartz or the like can be used. The light-shielding layer constituting the folded lattice section 183 may be formed using a metal film, preferably chromium. Alternatively, it may be provided by chromium oxide or the like.

[0087] When light is shone onto the gray tone mask 180 for exposure, the result is shown in Figure 16(A-2). Thus, the light transmittance in the region superimposed on the light-shielding portion 182 becomes 0%, and the light-shielding portion 182 or In the region where the diffraction grating 183 is not provided, the light transmittance is 100%. The light transmittance in the lattice portion 183 is generally in the range of 10% to 70%, and is a slit of a diffraction grating. This can be adjusted by the spacing of dots or meshes, etc.

[0088] The halftone mask 185 shown in Figure 16(B-1) is applied to a translucent substrate 186. It consists of a semi-transparent portion 187 formed by a light-transmitting layer and a light-shielding portion 188 formed by a light-shielding layer. It is being done.

[0089] The semi-transparent portion 187 is made up of layers of MoSiN, MoSi, MoSiO, MoSiON, CrSi, etc. It can be formed using the same method. The light-shielding portion 188 is similar to the light-shielding layer of the gray tone mask. It can be formed using a metal film, preferably made of chromium or chromium oxide. .

[0090] When light is shone onto the halftone mask 185 for exposure, the result is shown in Figure 16(B-2). Thus, the light transmittance in the region superimposed on the light-shielding portion 188 becomes 0%, and the light-shielding portion 188 is also semi-transparent. In the region where the light-transmitting part 187 is not provided, the light transmittance is 100%. Also, the semi-transparent part 1 The light transmittance in 87 is generally in the range of 10% to 70%, depending on the type or shape of the material being formed. The film thickness and other factors can be adjusted.

[0091] By exposing and developing using a multi-gradation mask, a resist mask with regions of different film thicknesses can be developed. It is possible to form a screen. Furthermore, it is possible to form resist masks with different film thicknesses. ru.

[0092] Next, as shown in Figures 3(C) and 4(C), resist masks 106a, 106b, 1 Etching is performed using 06e, 106f, and 106g. By performing etching... Then, conductive film 102 and conductive film 103 are selectively removed, and conductive layer 107a and conductive layer 108 a, conductive layer 107b, conductive layer 108b, conductive layer 107e, conductive layer 108e, conductive layer 107 f, conductive layer 108f, conductive layer 107g, and conductive layer 108g can be formed.

[0093] Next, as shown in Figures 3(D) and 4(D), resist masks 106a, 106b, 1 Ashing is performed on 06e, 106f, and 106g. For example, ashing by oxygen plasma. You can do this by performing abrasives such as shaping. The resist masks 106a and 106b are retracted (shrinked) by abrasives. By doing so, resist masks 109a and 109b are formed, and conductive layer 108a and Part of 108b is exposed. Also, this ashing process removes the resistance of the pixel area with a thin film thickness. The masks 106e, 106f and 106g are removed, and the conductive layers 108e, 108f and 1 08g is exposed. By using a resist mask formed with a multi-gradation mask in this way, This eliminates the need for additional resist masks, thus simplifying the process.

[0094] Next, as shown in Figures 5(A) and 6(A), the resist masks 109a and 109b are Etching is performed using this method. As a result, a portion of the conductive layer 108a is removed, leaving the conductive layer 110a A conductive layer 108b is formed, and a conductive layer 110b is formed with a portion of the conductive layer 108b removed, and the conductive layer 10 8e, 108f and 108g are removed, and then resist masks 109a and 109b are removed. Remove. By removing a portion of the conductive layer 108a, a portion of the conductive layer 107a is exposed. As a result, a portion of the conductive layer 107b is exposed due to the removal of a portion of the conductive layer 108b. As the conductive layer 108e is removed, the conductive layer 107e is exposed and the conductive layer 108f is removed. By removing the conductive layer 107f, the conductive layer 108g is exposed, The conductive layer 107g is exposed.

[0095] Note that, as shown in FIG. 5(A), by etching using the resist masks 109a and 109b which are retracted (reduced) from the resist masks 106a and 106b, the peripheral portions of the conductive layers 108a and 108b (regions of the conductive layers 108a and 108b that are exposed from the resist masks 109a and 109b) are also etched simultaneously. That is, the end portion of the conductive layer 107a protrudes beyond the end portion of the conductive layer 108a (110a), and the end portion of the conductive layer 107b protrudes beyond the end portion of the conductive layer 108b (110b). Also, the area of each of the conductive layers 107a and 107b is larger than the area of each of the conductive layers 110a and 110b. Further, the conductive layers 110a and 110b, and the conductive layers 107a and 107b have a region where the conductive layers 110a and 110b overlap with the conductive layers 107a and 107b, and a region where the conductive layers 110a and 110b do not overlap with the conductive layers 107a and 107b. When removing the conductive layer having light-shielding properties, a part of the conductive layer having light-transmitting properties (for example, the surface portion that was in contact with the conductive layer having light-shielding properties, etc.) may be removed. The extent to which the conductive layer having light-transmitting properties is removed is determined by the etching selectivity between the conductive layer having light-transmitting properties and the conductive layer having light-shielding properties. Therefore, for example, the film thickness of the conductive layer having light-transmitting properties in the region covered by the conductive layer having light-shielding properties is often thicker than the film thickness of the conductive layer having light-transmitting properties in the region not covered by the conductive layer having light-shielding properties. When leaving the conductive layer having light-transmitting properties and removing only the conductive layer having light-shielding properties by wet etching, an etching with a high selectivity between the conductive layer having light-transmitting properties and the conductive layer having light-shielding properties is used.

[0096]

[0097] A solution is used. As a light-shielding conductive layer, for example, the first layer is made of molybdenum (Mo), and the second layer is made of molybdenum (Mo). The first layer is aluminum (Al), the third layer is molybdenum (Mo), or the first layer is Molybdenum (Mo), aluminum (Al) containing trace amounts of neodymium (Nd) in the second layer, 3 When using molybdenum (Mo) lamination for the layers, for example, phosphoric acid, nitric acid, acetic acid and This can also be done using a mixed acid consisting of water. By using this mixed acid, a uniform and good result can be obtained. It is also possible to give a forward taper shape. In this way, wet etching can give a tapered shape In addition to improving coverage, etching with an etching solution, rinsing with pure water, and drying... Although it is a simple process, it has high throughput, so the conductive layer having the above light-shielding properties It is suitable for use in ching.

[0098] Next, as shown in Figures 5(B) and 6(B), conductive layers 107a, 107b, 107e, 107f and 107g, along with conductive layers 110a and 110b, are covered as a gate insulating layer. A functional insulating film 111 is formed.

[0099] The insulating film 111 may be formed as a single layer or as a stacked structure of multiple films. When forming a laminated film structure, it is preferable that all films have sufficiently high light transmittance. In particular, it is preferable that the light transmittance is sufficiently high within the pixel area.

[0100] The insulating film 111 covering the light-transmitting conductive layer and the light-shielding conductive layer has a film thickness of 50 to 50 It is formed to a thickness of approximately 0 nm. The insulating film 111 is formed by various methods such as sputtering and plasma CVD. By CVD (Chemical Vapor Deposition), films containing silicon oxide or silicon nitride are formed as single layers or in multiple layers. Specifically, films containing silicon oxide, films containing silicon oxide nitride, and films containing silicon nitride These films may be formed as a single layer or by appropriately stacking them.

[0101] The insulating film 111 is preferably made of a light-transmitting material or a material with high light transmittance. However, the light transmittance is higher than that of conductive layers 107a, 107b, 107e, 107f, and 107g. It is desirable to have a material with high light transmittance. Therefore, when comparing the light transmittance of the two, The light transmittance of the edge film 111 is as follows: conductive layers 107a, 107b, 107e, 107f, and 107 It is desirable that the light transmittance of g is higher than or equal to that of the insulating film. Since 111 can be formed over a large area, in order to improve light utilization efficiency, light transmission A higher ratio is desirable. In particular, within the pixel area, insulating film 111, conductive layer 107e It is desirable that 107f and 107g are also formed from a translucent material.

[0102] Next, a semiconductor film 112 is formed on the insulating film 111.

[0103] The semiconductor film 112 may be formed as a single layer or as a stacked structure of multiple films. When creating a layered structure of multiple films, it is preferable that all films have sufficiently high light transmittance. Similarly, it is preferable that the light transmittance is sufficiently high, especially within the pixel area. The conductive film 112 is formed from a material that is transparent or has high light transmittance. This is preferable. The semiconductor film 112 can be formed using, for example, an oxide semiconductor. Examples of ion semiconductors include In-Ga-Zn-O non-single crystal films, In-Sn-Zn-O systems, and In -Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga-Zn-O system, Sn-Al- Oxide semiconductor films of Zn-O system, In-Zn-O system, Sn-Zn-O system, Al-Zn-O system, In-O system, S n-O system, and Zn-O system are used. In this embodiment, a film is formed by sputtering using an In-Ga-Zn -O system oxide semiconductor target. Also, the oxide semiconductor film can be formed by sputtering in an atmosphere of a rare gas (typically argon), an oxygen atmosphere, or an atmosphere of a rare gas (typically argon) and oxygen. Further, when using the sputtering method, a target containing 2% to 10% by weight of SiO2 is used for film formation, and SiO (x>0) that inhibits crystallization is included in the oxide semiconductor film to suppress crystallization x from occurring. It is also possible.

[0104] Before forming the semiconductor film 112 by sputtering, it is preferable to perform reverse sputtering to generate plasma by introducing argon gas and remove dust adhering to the surface of the insulating film 111. Reverse sputtering is a method of forming plasma near the substrate by applying a voltage to the substrate side using an RF power source in an argon atmosphere without applying a voltage to the target side to modify the surface. Note that nitrogen, helium, oxygen, etc. may be used instead of the argon atmosphere.

[0105] Note that heat treatment (heat treatment for dehydration or dehydrogenation) for reducing impurities such as moisture in the oxide semiconductor film can also be performed after film formation. This leads to an improvement in the electrical characteristics and reliability of the thin film transistor. For example, the heat treatment for dehydration or dehydrogenation is preferably performed at 350°C or higher and below the distortion point of the substrate, preferably 400°C or higher and below the distortion point of the substrate. Also, the substrate is introduced into an electric furnace, which is one of the heat treatment apparatuses, and oxidation ​​​​​​​​ After heat treatment of a semiconductor film under a nitrogen atmosphere, without exposure to air, It is preferable to prevent the inclusion of water and hydrogen into the oxide semiconductor film. Furthermore, dehydration of the oxide semiconductor film is also desirable. From the heating temperature T used for ionization or dehydrogenation, the same furnace is used until it reaches a temperature sufficient to prevent water from entering again. Specifically, this involves slowly cooling the mixture under a nitrogen atmosphere until the temperature drops by more than 100°C below the heating temperature T. This is preferable. Furthermore, it is not limited to a nitrogen atmosphere, but also to noble gases such as helium, neon, and argon. Dehydration or dehydrogenation can also be carried out under atmospheric or reduced pressure.

[0106] In addition, during the heat treatment, water is added to nitrogen or a noble gas such as helium, neon, or argon. Preferably, it does not contain hydrogen or the like. For example, nitrogen introduced into a heat treatment device, or The purity of noble gases such as helium, neon, and argon is preferably 6N (99.9999%) or higher. Alternatively, 7N (99.99999%) or higher (i.e., impurity concentration of 1 ppm or less, preferably) It is preferable to keep it at 0.1 ppm or less.

[0107] Furthermore, the light transmittance of conductive layers 107a, 107b, 107e, 107f, and 107g is half It is preferable that the light transmittance is higher than or about the same as that of the conductive film 112. Furthermore, the conductive layers 107a, 107b, 107e, 107f, and 107g are utilized over a large area. In some cases, to improve light utilization efficiency, an even higher aperture ratio is obtained, and power consumption To achieve reduction, it is preferable that the light transmittance of a larger area film is higher. Furthermore, conductive layers 107a, 107b, 107e, 107f, and 107g are used for gate wiring. It is also used in the source wiring section, thin-film transistor section, and retaining capacitance section. ru.

[0108] Furthermore, the light transmittance of the insulating film 111 is higher than that of the semiconductor film 112. This is preferable because the insulating film 111 can be used over a larger area compared to the semiconductor film 112. In some cases, to improve light utilization efficiency, a film with a larger surface area and higher light transmittance is required. This is because it is preferable.

[0109] Next, a resist mask is fabricated on the semiconductor film 112 (not shown), and the resist mask is used Etching is then performed, and as shown in Figures 5(C) and 6(C), the semiconductor is processed into the desired shape. Conductor layers (also called island semiconductor layers) 113a and 113e are formed. For etching, 0 Hydrofluoric acid, hydrochloric acid, etc., diluted to 0.05% can be used.

[0110] The semiconductor layers 113a and 113e are semiconductor layers (active layers) of a thin-film transistor or thin-film transistor It can function as part of the semiconductor layer (active layer) of a transistor. Body layers 113a and 113e can function as either a volume or as part of a volume. Furthermore, the semiconductor layers 113a and 113e reduce parasitic capacitance at the intersections between wirings. It can function as a membrane for sealing.

[0111] Next, as shown in Figures 5(D) and 6(D), semiconductor layer 113a and semiconductor layer 113e and The conductive film 114 and conductive film 115 are deposited by sputtering so as to cover the insulating film 111. Layer formation is performed. This process can be carried out continuously using a multi-chamber system. Sputtering is also possible. Continuously, conductive film 114 and conductive film 115 are formed. By using a membrane, throughput can be improved and the inclusion of impurities and debris can be suppressed. .

[0112] The light transmittance of the conductive film 114 is preferably sufficiently high. It is preferable that this value is higher than the light transmittance of the conductive film 115.

[0113] The conductive film 114 is one of the materials applicable to the conductive film 102 shown in Figures 3 and 4. Multiple of these can be used to form a single-layer or laminated structure.

[0114] The conductive film 114 is made of approximately the same material as the material on which the conductive film 102 was formed. It is preferable. "Generally the same material" means a material with the same main elemental component, and at the impurity level... However, the types and concentrations of elements contained may differ. Thus, the materials are generally the same. By using this, when forming a transparent conductive film by sputtering or vapor deposition, the material There is the advantage of being able to share. If materials can be shared, the same manufacturing equipment can be used. can.

[0115] It is preferable that the resistance value of the conductive film 114 is higher than the resistance value of the conductive film 115.

[0116] The conductive film 115 is one of the materials applicable to the conductive film 103 shown in Figures 3 and 4. Multiple of these can be used to form a single-layer or laminated structure.

[0117] Furthermore, the conductive film 115 is made of a different material from the material on which the conductive film 103 was formed. It is preferable that the conductive film 115 has a different laminated structure from the conductive film having light-shielding properties. It is preferable that it be configured to have such a configuration.

[0118] If a conductive film 115 is formed on top of a conductive film 114, the two films may react with each other. There are cases where this is the case. For example, if the upper surface of the conductive film 114 (the surface in contact with the conductive film 115) is ITO. In this case, if the lower surface of the conductive film 115 (the surface in contact with the conductive film 114) is aluminum, A chemical reaction will occur. Therefore, to avoid this, the lower surface of the conductive film 115 ( It is preferable to use a high-melting-point material for the surface in contact with the conductive film 114. For example, a high-melting-point material Examples of materials include molybdenum (Mo), titanium (Ti), tungsten (W), and neodymium. Examples include (Nd). Then, a material with low resistance is used on top of these films to conduct It is preferable to make the electrode film 115 a multilayer film. As a material with low resistance, aluminum Examples include aluminum (Al), copper (Cu), and silver (Ag). These materials have light-shielding and reflection properties. It has projectile capabilities.

[0119] Next, as shown in Figures 7(A) and 8(A), a resist mask 118 is placed on the conductive film 115. Form a, 118b, 118e, 118g, and 118h. Resist mask 118a , 118b, 118e, 118g, and 118h can be achieved by using a multi-level mask. A resist mask having regions of different thicknesses, and a resist mask placed in the drive circuit section. k 118a and 118b are resist masks 118e, 118g, and placed in the pixel area. It has a film thickness greater than 118h.

[0120] Next, as shown in Figures 7(B) and 8(B), resist masks 118a, 118b, 11 Etching of conductive films 114 and 115 was performed using 8e, 118g, and 118h. By etching, conductive layer 119a, conductive layer 120a, conductive layer 119b, conductive layer 120b, conductive layer 119e, conductive layer 120e, conductive layer 119g, conductive layer 120g, Conductive layers 119h and 120h can be formed. Furthermore, semiconductor layer 113a Furthermore, a portion of the channel formation region can be etched from 113e.

[0121] Next, as shown in Figures 7(C) and 8(C), resist masks 118a, 118b, 1 Ashing is performed on 18e, 118g, and 118h. For example, ashing by oxygen plasma. You can do this by performing abrasives such as shaping. The resist masks 118a and 118b are retracted (shrinked) by abrasives. By doing so, resist masks 121a and 121b are formed, and conductive layer 120a and Part of 120b is exposed. Also, this ashing process removes the resin from the thin pixel areas. The stock masks 118e, 118g and 118h are removed, and the conductive layers 120e, 120g and 120h is exposed. By using a resist mask formed with a multi-gradation mask in this way... This eliminates the need for additional resist masks, thus simplifying the process.

[0122] Next, as shown in Figures 9(A) and 11(A), resist masks 121a and 121b Using this, the conductive layers 120a, 120b, 120e, 120g, and 120h are treated with E. Chining is performed. As a result, a portion of conductive layers 120a and 120b is removed from conductive layer 104. a and 104b are formed, and a portion of the conductive layers 119a and 119b is exposed. The end of layer 119a protrudes more than the end of conductive layer 104a, and the end of conductive layer 119b is conductive It protrudes beyond the edge of the conductive layer 104b. Also, conductive layers 120e, 120g and 120h By removing this layer, the conductive layers 119e, 119g, and 119h are exposed. Afterwards, remove the resist masks 121a and 121b.

[0123] Based on the above, the thin-film transistors 130A and 130B shown in Figures 1 and 2, and the capacitance element Sub-element 131 can be fabricated, and the thin-film transistor 130B and capacitive element 131 can be made light-transmitting. It can be an element having the following: Furthermore, within the pixel section, the source wiring section and the gate wiring section. The part can also be made into an element that is light-transmitting.

[0124] Note that the etching process at this time leaves the underlying semiconductor layers 113a and 113e intact. Therefore, you can set the etching conditions appropriately. For example, you can control the etching time. Furthermore, the materials constituting the semiconductor layers 113a and 113e, and the conductive layers 119a and 119b As materials that make up 119e, 119g, and 119h, materials with a high etching selectivity are used. It is preferable to use each of them. For example, as the material constituting the semiconductor layer, gold containing Sn Oxide materials (e.g., SnZnO) x (x>0), or SnGaZnO x (e.g., x>0) The materials used to constitute the conductive layers 119a, 119b, 119e, 119g, and 119h are as follows: For this purpose, ITO or similar materials can be used. Also, when removing a conductive layer that has light-shielding properties, a light-transmitting material can be used. The conductive layer is also partially removed (for example, the surface portion that was in contact with the light-shielding conductive layer). This may occur. For example, the film thickness of conductive layers 119a and 119b is the same as that of conductive layer 11 The resulting film thickness is often greater than that of 9e, 119g, and 119h.

[0125] Next, as shown in Figures 9(B) and 11(B), the fabricated thin-film transistor 130A and An insulating layer 123 is formed on the 130B and the capacitive element 131. The insulating layer 123 is simple It can be formed in a layered structure or a laminated structure. When formed in a laminated structure, each It is preferable that the light transmittance of the film is sufficiently high. The insulating layer 123 is protected from impurities and other thin film traces. It functions as a protective film for the transistor. In addition, the insulating layer 123 is a thin-film transistor, capacitance It reduces irregularities caused by elements or wiring, and thin film transistors, capacitive elements, or wiring It can function as a film that flattens surfaces where blemishes have formed.

[0126] In particular, the thin-film transistor 130B and the capacitive element 131 in the pixel area are made of a light-transmitting element. Since they can be formed in this way, the area where they are arranged can also be used as a display area. To enable this, thin-film transistor 130B, capacitive element 131 or wiring etc. It is beneficial to mitigate the unevenness and flatten the surface on which these elements are formed.

[0127] The insulating layer 123 is preferably formed of a film having silicon nitride. It is suitable because it has a high blocking effect on objects. Alternatively, the insulating layer 123 is an organic material It is preferable that it be formed with a film having [a certain property]. Examples of organic materials include acrylic, polyimide, and [another property]. Riamide and similar materials are suitable. These organic materials are preferred because they have a high ability to flatten uneven surfaces. Therefore, when the insulating layer 123 is made of a silicon nitride film and an organic material film in a laminated structure... In this configuration, it is preferable to place a silicon nitride film on the lower side and an organic material film on the upper side.

[0128] Furthermore, before forming the insulating layer 123, an oxide is brought into contact with the semiconductor layer 113a and the semiconductor layer 113e. It is also possible to form insulating films, etc. This reduces the carrier concentration in the semiconductor layer. It is possible.

[0129] At this time, the oxide insulating film should have a thickness of at least 1 nm or more, and acid should be applied using methods such as sputtering. The dielectric insulating film can be formed by appropriately using a method that prevents the inclusion of impurities such as water and hydrogen. The substrate temperature during film deposition should be between room temperature and 300°C. (Sputtering of silicon oxide film) Thin film deposition by the galvanic gas method is carried out under a rare gas (typically argon) atmosphere, an oxygen atmosphere, or a rare gas It can be carried out in an atmosphere of oxygen (typically argon) and oxygen. A silicon dioxide target or a silicon target can be used as the target. For example, silicon Using a target, silicon oxide is formed by sputtering under oxygen and nitrogen atmospheres. It is possible to form a structure in contact with an oxide semiconductor layer whose resistance has been reduced by dehydration or dehydrogenation. The oxide insulating film that forms it contains water, hydrogen ions, and OH - It does not contain impurities such as these, and these Inorganic insulating films are used to block external intrusion, typically silicon oxide films and nitriding acid films. A silicon dioxide film, an aluminum oxide film, or aluminum oxide-nitride film is used.

[0130] Furthermore, the process involves heat treatment (preferably at 200°C) under an inert gas atmosphere or an oxygen gas atmosphere. The temperature may be set to 400°C or less, for example, between 250°C and 350°C. This will allow the semiconductor to... The grooves of the body layer 113a and the semiconductor layer 113e are heated while in contact with the oxide insulating film.

[0131] Through the above process, the oxide semiconductor film after deposition is dehydrated or dehydrogenated. Heat treatment is performed to reduce resistance and convert it into a high-resistance source region or high-resistance drain region. This selectively creates an oxygen-rich state in a portion of the high-resistance drain region. As a result, the gate current The channel-forming region overlapping with the polar layer becomes type I, and the high-resistance source region overlapping with the source electrode layer Then, a high-resistance drain region overlapping the drain electrode layer is formed self-aligned. The oxide semiconductor layer is entirely converted to type I, becoming an oxide semiconductor layer that includes a channel-forming region.

[0132] Next, as shown in Figures 9(C) and 11(C), a conductive film 206 and The conductive film 207 is layered and formed by sputtering. This process is carried out continuously. Continuous sputtering can also be performed using a chamber. Continuously, conductive film 2 By forming the 06 and conductive film 207, throughput is improved, and impurities and dust are reduced. It is possible to suppress the inflow.

[0133] The light transmittance of the conductive film 206 is preferably sufficiently high. It is preferable that this value is higher than the light transmittance of the conductive film 207.

[0134] The conductive film 206 is one of the materials applicable to the conductive film 102 shown in Figures 3 and 4. Multiple of these can be used to form a single-layer or laminated structure.

[0135] The conductive film 206 has substantially the same material as the material on which the conductive films 102 and 114 were formed. It is preferable that it be composed of such materials. "Generally the same materials" means materials whose main elemental component is the same. For example, the types and concentrations of elements considered to be impurities may differ. By using the same material, a transparent conductive film can be formed by sputtering or vapor deposition. In this case, there is the advantage of being able to share materials. If materials can be shared, the same manufacturing equipment can be used. This allows for smoother manufacturing processes and improved throughput. This makes it possible to reduce costs.

[0136] It is preferable that the conductive film 207 has a sufficiently low resistance and a sufficiently high conductivity. The resistance value of 206 is preferably higher than the resistance value of the conductive film 207.

[0137] The conductive film 207 is one of the materials applicable to the conductive film 103 shown in Figures 3 and 4. Multiple can be used to form a single-layer or multi-layer structure. Also, the conductive film 206 is It is preferable that the conductive film 207 is formed from a different material than the material on which it is formed. Alternatively, the conductive film 207 is formed having a laminated structure different from that of a conductive film having light-shielding properties. This is preferable because, in the manufacturing process, the temperature applied to conductive film 206 and conductive film 2 This is because it is often different from 07. Typically, conductive film 207 is in a higher temperature state. Often, the conductive film 207 has a single-layer or multi-layer structure of a material with low wiring resistance. It is preferable to use a structure. Furthermore, the conductive film 206 is formed of a light-transmitting material. This is preferable.

[0138] If a conductive film 207 is formed on top of a conductive film 206, the two films may react with each other. There are cases where this is the case. For example, if the upper surface of the conductive film 206 (the surface in contact with the conductive film 207) is ITO. In this case, if the lower surface of the conductive film 207 (the surface in contact with the conductive film 206) is aluminum, A chemical reaction will occur. Therefore, to avoid this, the lower surface of the conductive film 207 ( It is preferable to use a high-melting-point material for the surface in contact with the conductive film 206. For example, a high-melting-point material Examples of materials include molybdenum (Mo), titanium (Ti), tungsten (W), and neodymium. Examples include (Nd). Then, a material with low resistance is used on top of these films to conduct It is preferable to make the electrode film 207 a multilayer film. As a material with low resistance, aluminum Examples include aluminum (Al), copper (Cu), and silver (Ag). These materials have light-shielding and reflection properties. It has projectile capabilities.

[0139] Next, as shown in Figures 9(D) and 11(D), a resist mask 300 is placed on the conductive film 207. Form a and 300e. The resist masks 300a and 300e use multi-gradation masks. As a result, it is a resist mask having regions of different thicknesses, and is placed in the drive circuit section. The resist mask 300a is thicker than the resist mask 300e placed in the pixel area. It has a film thickness.

[0140] Next, as shown in Figures 10(A) and 12(A), the resist masks 300a and 3 Etching of conductive film 206 and conductive film 207 is performed using 00e. This is done by etching the conductive layer 400a, 400e and conductive layers 105a, 105e can be formed.

[0141] Next, as shown in Figures 10(B) and 12(B), the resist masks 300a and 300e Ashing is performed. For example, ashing with oxygen plasma can be done. By causing the screen 300a to recede (shrink) through ashing, the resist mask 116a A layer is formed, and a portion of the conductive layer 105a is exposed. In addition, this ashing process results in a thickness The thin resist mask 300e of the pixel area is removed, and the conductive layer 105e is exposed. By using a resist mask formed with a multi-gradation mask, an additional resist mask can be used. This eliminates the need for certain steps, thus simplifying the process.

[0142] Next, as shown in Figures 10(C) and 12(C), using the resist mask 116a, Etching is performed on the conductive layer 105a. As a result, a portion of the conductive layer 105a is removed. A conductive layer 401a is formed, and a portion of the conductive layer 400a is exposed. Also, the conductive layer 105e The conductive layer 400a is removed, and the conductive layer 400e is exposed. Note that the edges of the conductive layer 400a are connected to the conductive layer 401 It protrudes beyond the end of a. Also, conductive layer 400a and conductive layer 401a are, The area of ​​the layers will differ significantly. In other words, the area of ​​conductive layer 400a is the same as that of conductive layer It is larger than the area of ​​401a. Furthermore, after etching, remove the resist mask 116a. To leave.

[0143] Next, as shown in Figures 10(D) and 12(D), conductive layers 400a, 400e and conductive An insulating layer 208 is formed on layer 401a. The insulating layer 208 can be a single layer or a multilayer structure. It can be formed. When formed as a laminated structure, the light transmittance of each film is sufficient. Higher is preferable. The insulating layer 208 is connected to the conductive layers 400a, 400e and 401a. It can function as an insulating film that mitigates unevenness and flattens the surface. In other words, The insulating layer 208 can function as a planarization film. The insulating layer 208 is silicon nitride It is preferable that the film be formed with a film having the following properties. The silicon nitride film has the effect of blocking impurities. It is preferable because it has a high coefficient of action. Alternatively, the insulating layer 208 may be formed of a film having an organic material. This is preferable. Examples of organic materials include acrylic, polyimide, and polyamide. These organic materials are suitable because they have a high ability to flatten uneven surfaces. Therefore, insulation When layer 208 is a laminated structure consisting of a silicon nitride film and an organic material film, the silicon nitride film is placed on the lower side. It is preferable to arrange them and place a film of organic material on top.

[0144] Furthermore, insulating layer 123 and insulating layer 208 have the function of a color filter. This is possible. By providing a color filter on the substrate 101, a color filter can be applied to the opposing substrate. This eliminates the need for a filter, but it does require a margin to adjust the position of the two circuit boards. Because it is eliminated, the manufacturing of the panels can be made easier.

[0145] Next, a resist mask is formed on the insulating layer 208, and etching is performed using the resist mask. By doing so, a portion of the insulating layer 123 and insulating layer 208 is removed, creating a contact hole 11 Form 7.

[0146] Next, as shown in Figure 12(E), a conductive film is placed on the insulating layer 123 and the contact hole 117. A resist mask is formed on the conductive film, and etching is performed using the resist mask. By doing so, a portion of the conductive film is removed, and conductive layers 124e, 124g, and 124h are formed. The conductive film can be formed in a single-layer or multilayer structure. It is preferable that the light transmittance of each film is sufficiently high.

[0147] The conductive layers 124e, 124g, and 124h can function as pixel electrodes. Alternatively, the conductive layers 124e, 124g, and 124h may function as electrodes for a capacitive element. Therefore, the conductive layers 124e, 124g, and 124h are translucent. It is desirable that the material be made of a material with high light transmittance.

[0148] The conductive layers 124e, 124g, and 124h are connected via the contact hole 117 to the source Wiring, source electrode layer, gate wiring, gate electrode layer, pixel electrode, capacitive wiring, electrode of capacitive element It is possible to connect to such as the conductive layers 124e, 124g, and 124 h can function as wiring to connect conductors.

[0149] The conductive layers 124e, 124g, and 124h and the conductive film 102 are made of generally the same material. It is preferable that the conductive layers 124e, 124g, and 124h are configured as follows: Preferably, the film 114 is made of approximately the same material. Alternatively, the conductive layer 12 4e, 124g, and 124h and conductive film 206 are composed of approximately the same material. This is preferable. By forming it with roughly the same material in this way, sputtering, vapor deposition, etc. When forming a conductive film with light-transmitting properties, there is the advantage of being able to share materials. Sharing allows the same manufacturing equipment to be used, enabling a smoother manufacturing process. This makes it possible to improve throughput and reduce costs. .

[0150] As described above, by following the steps shown in Figures 3 to 12, a drive circuit is created on the same substrate using six masks. Thin-film transistors 130A for the pixel section and thin-film transistors 130B for the pixel section were fabricated separately. This is possible. Furthermore, the capacitive element 131 can also be formed on the same substrate. Thin film By arranging the transistor 130B and the capacitive element 131 in a matrix corresponding to each individual pixel... This allows it to be used as one of the substrates for fabricating an active-matrix type display device. For convenience, such a substrate will be referred to as an active matrix substrate in this specification.

[0151] Furthermore, in the semiconductor device fabrication method shown in Figures 3 to 12, a light-transmitting conductive film and light-transmitting A conductive film having light-transmitting properties is laminated with a conductive film having lower resistance than the transparent conductive film, and multiple layers By selectively etching the laminated film using a mask, a transparent conductive film is obtained. The drive circuit section is composed of a laminate of conductive layers with lower resistance than a light-transmitting conductive film. The gate electrode layer, source electrode layer, or drain electrode layer of a thin-film transistor, and a light-transmitting material The gate electrode layer, source electrode layer, and of the thin-film transistor in the pixel portion are composed of a conductive film. This forms the drain electrode layer. This allows the drive circuit section and In the pixel region, gate electrode layers, source electrode layers, or drain electrode layers with different structures are created. Because it can be separated, the number of manufacturing steps can be reduced, and manufacturing costs can be reduced. It is possible.

[0152] Furthermore, in the semiconductor device fabrication method shown in Figures 3 to 12, a light-transmitting conductive film and light-transmitting A conductive film having light-transmitting properties is laminated with a conductive film having lower resistance than the transparent conductive film, and multiple layers By selectively etching the laminated film using a mask, a transparent conductive film is obtained. The drive circuit section is composed of a laminate of conductive layers with lower resistance than a light-transmitting conductive film. The gate wiring, source wiring, or other routing wiring of thin-film transistors, and the light-transmitting The gate wiring, source wiring, or of the thin-film transistor in the pixel portion, which is composed of a conductive film. Other routing can also be formed. This does not increase the number of masks. In the drive circuit section and the pixel section, gate wiring, source wiring, or other structures of different types are used. Because it is possible to create different types of wiring layouts, the number of manufacturing steps can be reduced, and manufacturing It can reduce costs.

[0153] Furthermore, in the semiconductor device fabrication method shown in Figures 3 to 12, the thin-film transistors of the pixel portion are used. In the same process, a retaining capacity is constructed, consisting of a light-transmitting conductive layer and a dielectric layer. This also allows for thin-film transients in the pixel area without increasing the number of masks. Because it is possible to create different types of containers and holding capacities, the number of manufacturing steps can be reduced. It can reduce manufacturing costs.

[0154] Furthermore, in the semiconductor device fabrication method shown in Figures 3 to 12, a transparent conductive film is placed on top of a transparent conductive film. A conductive film with a lower resistance value than the photosensitive conductive film is laminated, and for example, a multi-gradation mask is used to laminate the film. By selectively etching the layer film, a transparent conductive film and a transparent conductive film are obtained. The thin-film transistor in the drive circuit section is composed of a stack of conductive layers with a lower resistance than the film. A thin film of the pixel portion is formed by a conductive layer overlapping the channel formation region and a light-transmitting conductive film. It is also possible to form a conductive layer that overlaps the channel formation region of the transistor. The conductive layer that overlaps the channel formation region of each thin-film transistor is This is a conductive layer that can function as a back gate electrode layer. (As shown in Figures 3 to 12) This semiconductor device fabrication method allows for the creation of the drive circuit section and pixel section without increasing the number of masks. This allows for the creation of conductive layers with different structures, thereby reducing the number of manufacturing steps. This allows for a reduction in manufacturing costs.

[0155] Next, an example of a semiconductor device structure different from the pixel section shown in Figure 2 will be explained using Figure 13. Figure 13(A) is a top view of the semiconductor device according to this embodiment, and Figure 13(B) is This is a cross-sectional view of the IJ in Figure 13(A). The difference from Figure 2 is the lower electrode of the holding capacitance section. The key features are the increased area and the use of the upper electrode of the holding capacitance as the pixel electrode 124. The size of the volume section is preferably 70% or more, or 80% or more, of the pixel pitch. The configuration other than the drive circuit section, the holding capacitance section, and the holding capacitance wiring is the same as the configuration shown in Figure 2. Therefore, a detailed explanation will be omitted.

[0156] By adopting this configuration, the source wiring and the source electrode layer or drain electrode layer During the formation process, it becomes unnecessary to form the upper electrode of the holding capacity section, thus increasing the transmittance. This is possible. Furthermore, a large storage capacity section with high transmittance can be formed. Storage capacity section By increasing this value, the potential of the pixel electrode remains even when the thin-film transistor is turned off. It becomes easier to maintain. Also, the feedthrough potential can be reduced. Even when the volume-holding section is made large, the aperture ratio can be increased, reducing power consumption. It can be made possible. Also, because the insulating film is made of two layers, pinholes can form in the insulating film. This prevents interlayer short circuits caused by the above, reduces unevenness in the capacitance wiring, and suppresses orientation irregularities of the liquid crystal. It can be done.

[0157] Next, an example of a semiconductor device structure different from that in Figure 2 will be explained using Figure 14. Figure 14( Figure A is a top view of the semiconductor device according to this embodiment, and Figure 14(B) is a top view of Figure 14(A). This is a cross-sectional view of KL in Figure 2. The difference from Figure 2 is that the lower electrode of the holding capacity section is made larger. Capacitive wiring, gate wiring, and source wiring are formed with a light-transmitting conductive layer, and the capacitance is maintained. The key feature is the enlarged upper electrode of the section. The size of the retention capacitance section is more than 70% of the pixel pitch. It is preferable to have a capacity of 80% or more. The components other than the holding capacity section are shown in Figure 2. Since the structure is the same, a detailed explanation will be omitted.

[0158] By using this configuration, the capacitive wiring is shaped using a material with low resistance and high conductivity. This reduces signal waveform distortion and voltage drop due to wiring resistance. This can be done. Also, the unevenness caused by the contact holes of the pixel electrodes disrupts the alignment of the liquid crystal. Even if such a thing exists, the conductive layer with light-shielding properties of the capacitive wiring can prevent light leakage. Yes, it is possible. Also, by increasing the retention capacitance, the thin-film transistor can be turned off. Even so, the potential of the pixel electrodes is more easily maintained. Also, the feedthrough potential is reduced. This is possible. Furthermore, even when a large holding capacity is formed, the opening ratio can be increased. This can reduce power consumption.

[0159] Next, an example of a semiconductor device structure different from that in Figure 2 will be explained using Figure 15. Figure 15( Figure A is a top view of the semiconductor device according to this embodiment, and Figure 15(B) is a top view of Figure 15(A). This is a cross-sectional view of MN in Figure 2. The difference from Figure 2 is that it functions as the lower electrode of the holding capacitance section. The transparent conductive layer is enlarged, and the upper electrode of the holding capacitance section has light-transmitting properties. The key feature is the increased size of the conductive layer. The size of the capacitance retention area is more than 70% of the pixel pitch. It is preferable that the capacity be 80% or more. The configuration other than the holding capacity section is as shown in Figure 2. Since it is similar to [another example], a detailed explanation will be omitted.

[0160] This configuration allows for the creation of a large retention capacity with high transmittance. By increasing the retention capacitance, even when the thin-film transistor is turned off, the pixels remain visible. The electrode potential is more easily maintained. Additionally, the feedthrough potential can be reduced. Furthermore, even when a large holding capacity is formed, the opening ratio can be increased, and power consumption It can reduce the force required.

[0161] This embodiment can be freely combined with other embodiments.

[0162] (Embodiment 2) A thin-film transistor is fabricated according to one aspect of the present invention, and the thin-film transistor is used as a pixel portion, and This involves manufacturing a semiconductor device (also called a display device) that has a display function and is used in a drive circuit. This can be done. Also, a part or all of the drive circuit in which a thin-film transistor is formed, and the thin-film transistor The pixel section with the zistor is integrally formed on the same substrate to form a system-on-panel. It is possible.

[0163] A display device includes display elements. Display elements include liquid crystal elements (also called liquid crystal display elements) and light-emitting elements. A light-emitting element (also called a light-emitting display element) can be used. The light-emitting element is activated by current or voltage. This category includes elements whose brightness is controlled, specifically inorganic EL (Electrical LEDs). This includes Luminescence elements, organic EL elements, etc. Also, electronic inks. Furthermore, display media in which the contrast changes due to electrical effects can also be applied.

[0164] Furthermore, the display device includes a panel in which the display elements are sealed, and a controller on the panel. It includes a module on which ICs and the like are mounted. Furthermore, it is a device for manufacturing the display device. In the process, the element substrate, which corresponds to one form before the display element is completed, supplies current to the display element. Each of the multiple pixels is provided with means for supplying power. Specifically, the element substrate is the pixel of the display element. It is acceptable to have only the electrodes formed, or to have the conductive film that will become the pixel electrode formed first. It may be the state before etching and forming the pixel electrodes, or any form may apply. I'm hooked.

[0165] In this specification, the term "display device" refers to an image display device, a display device, or an optical display device. This refers to the power source (including lighting equipment). It also refers to connectors, such as FPC (Flexible Printed Circuit). (inted circuit) or TAB (Tape Automated Bon) (ding) tape or TCP (Tape Carrier Package) Modules that have a printed circuit board attached to the end of the TAB tape or TCP. The display element or IC (integrated circuit board) is integrated using the COG (Chip On Glass) method. All modules in which the road is directly implemented are also included in the display device.

[0166] Figure 17 shows the external appearance and cross-section of a liquid crystal display panel, which is a form of semiconductor device. Let me explain. Figure 17(A) shows thin-film transistors 4010 and 4011, and liquid crystal element 401 3 is sealed between the first substrate 4001 and the second substrate 4006 by the sealing material 4005. Figure 17(B) is a plan view of the panel, and Figure 17(A) is a cross-sectional view of the QR in Figure 17(A). It corresponds to this.

[0167] Furthermore, the thin-film transistors 4010 and 4011 shown in Figure 17 have a gate electrode layer and a gate insulating layer. The edges of the margin layer, semiconductor layer, source electrode layer, and drain electrode layer are tapered. As shown, by tapering the ends of each layer, the layer formed above each layer in contact with it This improves coverage and prevents breakage, thereby increasing the yield of semiconductor devices. This is possible. However, this embodiment is not limited to this configuration, and includes gate electrode layer, gate insulation The edges of the layer, semiconductor layer, or source electrode layer or drain electrode layer are not necessarily tapered. It is not necessary. Also, one or more layers may be tapered.

[0168] A pixel section 4002 provided on the first substrate 4001, a signal line driving circuit 4003, and scanning A sealing material 4005 is provided so as to surround the line drive circuit 4004. A second substrate 4 is placed on top of section 4002, the signal line drive circuit 4003, and the scan line drive circuit 4004. 006 is provided. Therefore, the pixel section 4002, the signal line driving circuit 4003, and the scan line The drive circuit 4004 consists of the first substrate 4001, the sealing material 4005, and the second substrate 4006. It is sealed together with the liquid crystal 4008. In this embodiment, the pixel section 4002 The signal line drive circuit 4003 and the scan line drive circuit 4004 are placed on the first substrate 4001. An example of an integrally formed circuit will be described, but the signal line drive circuit 4003 or the scan line drive circuit 400 One of the four options is made on a separately prepared substrate using a thin layer of polycrystalline or single-crystal semiconductor. It may also be formed using film transistors and bonded onto the first substrate 4001. Figure 1 In 7, the pixel unit 4002, the signal line driving circuit 4003, and the scan line driving circuit 4004 are acid A thin-film transistor formed from a synthetic semiconductor is given as an example.

[0169] Furthermore, the first substrate 4001 includes a pixel section 4002 and a signal line driving circuit 4003, The scan line driving circuit 4004 has multiple thin-film transistors, and in Figure 17(B), The thin-film transistor 4010 included in the element 4002 and the signal line driving circuit 4003 Thin-film transistor 4011 is shown as an example. Thin-film transistor 4010 and thin-film transistor ZISTA 4011 corresponds to a thin-film transistor using an N-type semiconductor layer. Pixel section 400 Although the storage capacity section is not shown in Figure 2, it is as shown in Figures 2, 13 to 15. It is also possible to form a volume-holding section.

[0170] As described above, the drive circuit is electrically connected to the gate electrode layer of the thin-film transistor. The gate wiring, including the gate electrode layer, consists of a light-transmitting conductive layer and a light-shielding layer with high conductivity. It is stacked in the order of a conductive layer and a thin-film transistor, and is the source electrode layer or drain electrode layer. The source wiring, which includes a source electrode layer electrically connected to the source, has a light-transmitting conductive layer and conductivity It is laminated in order with a conductive layer that has high light-shielding properties. In addition, the pixel part is a thin film transistor The gate wiring, which includes a gate electrode layer electrically connected to the gate electrode layer of the gate, is translucent. It is formed only of a conductive layer, and is the source electrode layer or drain electrode layer of a thin-film transistor. Source wiring, including electrically connected source electrode layers, is formed solely of a light-transmitting conductive layer. In other words, the gate electrode layer of the thin-film transistor in the pixel area is electrically connected to the gate electrode. The gate wiring, including the gate electrode layer, is electrically connected to the gate electrode layer of the thin-film transistor in the drive circuit section. A portion of the translucent conductive layer that constitutes the gate wiring, including the gate electrode layer connected to it, is shaped It is configured such that the source electrode layer or drain electrode layer of the thin-film transistor in the pixel portion is electrically connected. The source wiring, including the connected source electrode layer, is the source electrode of the thin-film transistor in the drive circuit section. The source wiring includes a source electrode layer that is electrically connected to the polar layer or drain electrode layer. It is formed from a part of a transparent conductive layer.

[0171] The drive circuit section includes gate wiring with a gate electrode layer, source wiring with a source electrode layer, and back The gate is constructed by laminating a light-transmitting conductive layer followed by a light-shielding, highly conductive layer. This reduces wiring resistance and thus power consumption. When a back gate is provided, one of the conductive films constituting the back gate has light-shielding properties. Because it uses an electrolytic film, it is possible to block light between pixels. In other words, it is a black matrix. Light can be shielded between pixels without the need for [a specific method / tool].

[0172] In this way, the capacitance holding portion of the pixel portion is also formed with a light-transmitting conductive layer, The aperture ratio can be improved. Furthermore, the holding capacity portion is formed with a light-transmitting conductive layer. By doing so, the retention capacitance can be increased, so the thin-film transistor can be turned off. Even in such cases, the potential of the pixel electrodes is more easily maintained.

[0173] Furthermore, 4013 corresponds to a liquid crystal element, and the pixel electrode 4030 of the liquid crystal element 4013 is a thin film. It is electrically connected via transistor 4010 and wiring 4040. And the liquid crystal element The counter electrode 4031 of 4013 is formed on the second substrate 4006. Pixel electrode 403 The area where 0, the counter electrode 4031, and the liquid crystal 4008 overlap corresponds to the liquid crystal element 4013. do.

[0174] The first substrate 4001 and the second substrate 4006 are made of glass, metal (typically, glass). Stainless steel, ceramics, and plastics can be used. , FRP (Fiberglass-Reinforced Plastics) board, PV F (polyvinyl fluoride) film, polyester film, or acrylic resin film Film can be used. Also, aluminum foil can be used with PVF film or polyester. It is also possible to use a sheet with a structure sandwiched between layers of film.

[0175] Furthermore, 4035 is a spherical spacer, and the distance between the pixel electrode 4030 and the counter electrode 4031 It is provided to control the separation (cell gap). Furthermore, it selectively etches the insulating film. You may also use the spacers obtained by doing so.

[0176] In addition, a separately formed signal line drive circuit 4003 and a scan line drive circuit 4004 or pixel unit 4 Various signals and potentials supplied to 002 are transmitted via wiring 4014 and 4015 to F It is supplied by PC4018.

[0177] In this embodiment, the connection terminal electrode 4016 is connected to the pixel electrode 403 of the liquid crystal element 4013. It is formed from the same conductive film as 0. Also, the routing wiring 4015 is the same as wiring 4040. It is formed of a conductive film.

[0178] The connecting terminal electrode 4016 is connected to the terminal of the FPC 4018 via the anisotropic conductive film 4019. They are electrically connected.

[0179] Although not shown in the figures, the liquid crystal display device shown in this embodiment may also have an alignment layer. Alternatively, a liquid crystal exhibiting a blue phase without an alignment layer may be used. The blue phase is the liquid crystal phase. One such phase is the cholesteric liquid crystal, which undergoes a transition from the cholesteric phase to the isotropic phase as the temperature is increased. This is the phase that appears just before. The blue phase only appears in a narrow temperature range, so the temperature range To improve this, a liquid crystal composition containing 5% or more by weight of a chiral agent is used for liquid crystal 400. Used in 8. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a response speed of 1 ms. It has a short ec value (below ec), is optically isotropic, eliminating the need for orientation processing, and exhibits low field-of-view angle dependence. .

[0180] In addition to transmissive liquid crystal displays, this method can also be applied to semi-transmissive liquid crystal displays.

[0181] In addition, in liquid crystal displays, a polarizing plate is provided on the outside (viewing side) of the substrate, and a colored layer (color) is provided on the inside. The example shows the order of arrangement of the filter, electrode layer used for the display element, but the polarizing plate is inside the substrate. It may also be provided on the side. Furthermore, the laminated structure of the polarizing plate and the colored layer is not limited to this embodiment, and polarizing The settings should be adjusted as appropriate depending on the materials and manufacturing process conditions of the board and colored layer. A light-shielding film that functions as a rack matrix may be provided.

[0182] On the insulating layer 4021, the oxide semiconductor layer of the thin-film transistor 4011 for the drive circuit A conductive layer 4050 is provided in a position that overlaps with the channel formation region. The conductive layer 4050 is acid By placing it in a position that overlaps with the channel formation region of the synthetic semiconductor layer, before and after BT testing... This can reduce the change in the threshold voltage of the thin-film transistor 4011. The conductive layer 4050 may have the same potential as the gate electrode layer of the thin-film transistor 4011. They can be different, and can also function as a second gate electrode layer. Also, the conductive layer The potential of 4050 may be GND, 0V, or floating. In the thin-film transistor 4010, at a position overlapping with the channel formation region of the oxide semiconductor layer, The conductive layer 4060 may be provided using a photosensitive conductive material.

[0183] Furthermore, an insulating layer 4021 is formed as a planarizing insulating film. It can be formed using the same materials and methods as the planarized insulating layer 454 shown in Embodiment 1, i.e., polyimide. heat-resistant organic materials such as acrylic, benzocyclobutene, polyamide, and epoxy. In addition to the above organic materials, low dielectric constant materials (low-k materials) can be used. Use roxane-based resins, PSG (phosphorus glass), BPSG (phosphorus boron glass), etc. This can be achieved. Furthermore, by stacking multiple insulating films formed from these materials, an insulating layer 40 21 may be formed.

[0184] Siloxane-based resins are formed using siloxane-based materials as the starting material for Si-OS. This corresponds to a resin containing i-bonds. Siloxane resins use organic groups (e.g., alkyl groups) as substituents. You may also use aryl groups or fluoro groups. Furthermore, organic groups may have fluoro groups. You can.

[0185] The method for forming the insulating layer 4021 is not particularly limited and can be sputtered or SOG depending on the material. Spin coating, dip coating, spray coating, droplet ejection (inkjet method, screen coating) Printing, offset printing, etc.), doctor knife, roll coater, curtain coater, knife A f-coater or the like can be used. The firing process of the insulating layer 4021 and the annealing of the semiconductor layer are performed. By combining these processes, it becomes possible to efficiently manufacture semiconductor devices.

[0186] The pixel electrode 4030 and the counter electrode 4031 are made of indium oxide containing tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, oxide Titanium-containing indium tin oxide, indium tin oxide (ITO), indium zinc oxide Translucent conductive materials such as indium tin oxide with added silicon dioxide. You can use it.

[0187] Furthermore, conductive polymers (also known as conductive polymers) are used as the pixel electrode 4030 and the counter electrode 4031. It can be formed using a conductive composition containing ( ). The pixel electrodes have a sheet resistance of 10,000 Ω / □ or less and a light transmittance of 7 at a wavelength of 550 nm. It is preferable that it be 0% or more. A lower sheet resistance is preferable. Also, conductivity is preferable. It is preferable that the resistivity of the conductive polymer contained in the composition is 0.1 Ω·cm or less.

[0188] As the conductive polymer, so-called π-electron conjugated conductive polymers can be used. For example For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene Examples include derivatives thereof, or copolymers of two or more of these.

[0189] In addition, a separately formed signal line drive circuit 4003 and a scan line drive circuit 4004 or pixel unit 4 The various signals and potentials supplied to 002 are provided by the FPC4018.

[0190] The connection terminal electrode 4016 is made from the same conductive film as the pixel electrode 4030 of the liquid crystal element 4013. The formed and routed wiring 4015 is the source electrode of thin-film transistors 4010 and 4011. The layer and the drain electrode layer are formed of the same conductive film.

[0191] The connecting terminal electrode 4016 is connected to the terminal of the FPC 4018 via the anisotropic conductive film 4019. They are electrically connected.

[0192] Furthermore, in Figure 17, a signal line drive circuit 4003 is formed separately and implemented on the first substrate 4001. The example shown illustrates this configuration, but it is not limited to this setup. A separate scan line drive circuit can be formed to implement it. Alternatively, you may install it, or separately form only a part of the signal line drive circuit or a part of the scan line drive circuit. It's okay to implement it.

[0193] Figure 18 shows a semi-finished TFT substrate 2600 fabricated by the fabrication method disclosed herein. This shows an example of how a liquid crystal display module can be configured as a conductive device.

[0194] Figure 18 shows an example of a liquid crystal display module, in which the TFT substrate 2600 and the opposing substrate 2601 are The pixel portion 2603, which includes a TFT and the like, is fixed in place by a material 2602, and the liquid crystal layer is also included between them. A display element 2604 and a colored layer 2605 are provided to form a display area. Colored layer 2605 This is necessary for color display, and in the case of the RGB method, it corresponds to red, green, and blue. A colored layer is provided corresponding to each pixel. The TFT substrate 2600 and the opposing substrate 2601 Polarizing plates 2606, 2607, and 2613 are arranged on the outside. The light source is cold It consists of a cathode tube 2610 and a reflector 2611, and the circuit board 2612 is flexible The wiring circuit section 2608 of the TFT board 2600 is connected by the wire board 2609, and the control External circuits such as polarizing circuits and power supply circuits are incorporated. Also, between the polarizing plate and the liquid crystal layer The layers may be stacked with a phase difference plate in place.

[0195] The LCD display module has TN (Twisted Nematic) mode and IPS (I n-Plane-Switching) mode, FFS (Fringe Field Switching) (witching) mode, MVA (Multi-domain Vertical A) alignment) mode, PVA(Patterned Vertical Alignment) mode nment) mode, ASM(Axially Symmetric aligned Micro-cell mode, OCB (Optically Compensated) Birefringence mode, FLC (Ferroelectric Liq uid Crystal) mode, AFLC(AntiFerroelectric L You can use modes such as iquid Crystal.

[0196] Through the above process, a highly reliable liquid crystal display panel can be manufactured as a semiconductor device. ru.

[0197] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0198] (Embodiment 3) An example of electronic paper as a form of semiconductor device is shown.

[0199] Electronic paper drives electronic ink using switching elements and electrically connected elements. - May be used for this purpose. Electronic paper is also called an electrophoretic display device (electrophoretic display). It has been discovered that it offers the same readability as paper, lower power consumption compared to other display devices, and a thin and light form factor. It has the advantage of making it possible to do so.

[0200] Electrophoretic displays can take various forms, but one involves a first particle with a positive charge. A microcapsule containing a child and a second particle having a negative charge is placed in a solvent or solute. It is a dispersed substance, and by applying an electric field to the microcapsules, micro Move the particles inside the capsule in opposite directions and display only the color of the particles that have gathered on one side. It is such that the first or second particle contains dye and, in the absence of an electric field, It does not move. Also, the color of the first particle and the color of the second particle are different (colorless). (Includes)

[0201] Thus, in electrophoretic displays, substances with high dielectric constants move to regions with high electric fields. This is a display that utilizes the so-called electrophoretic effect. Note that electrophoretic displays are... Liquid crystal display devices do not require polarizing plates.

[0202] When the above microcapsules are dispersed in a solvent, it is called an electronic ink. This electronic ink can be printed on surfaces such as glass, plastic, fabric, and paper. Color display is also possible by using color filters or pigment-containing particles.

[0203] Furthermore, the microphone is placed on the active matrix substrate, appropriately sandwiched between the two electrodes. By arranging multiple microcapsules, an active-matrix type display device can be completed. By applying an electric field to the cell, a display can be created. For example, the thin film transient of Embodiment 1 An active matrix substrate obtained by stylus can be used.

[0204] Furthermore, the first and second particles in the microcapsules are made of conductive material, insulating material, Semiconductor materials, magnetic materials, liquid crystal materials, ferroelectric materials, electroluminescent materials, electro A type of material selected from trochromic materials, magnetophoretic materials, or a composite material thereof Use it.

[0205] Figure 19 shows an active-matrix electronic paper as an example of a semiconductor device. The thin-film transistor 581 used in the device is the thin-film transistor shown in Embodiment 1. It can be fabricated in the same way as a standard transistor and is a highly reliable thin-film transistor containing an oxide semiconductor layer.

[0206] The electronic paper in Figure 19 is an example of a display device using a twist ball display method. The Toball display method is an electrode layer that uses spherical particles painted in white and black as display elements. It is placed between the first electrode layer and the second electrode layer, and a potential difference is applied between the first electrode layer and the second electrode layer. This method displays information by generating a phenomenon that controls the orientation of spherical particles.

[0207] The thin-film transistor 581 formed on the substrate 580 is a thin-film transistor with a bottom gate structure. It is a film insulating film 586 in contact with the oxide semiconductor layer and a film insulating film 585 in contact with the film insulating film 586 It is covered. The thin-film transistor 581 is sealed between substrate 580 and substrate 596. A first electrode layer 587 is formed by a source electrode layer or a drain electrode layer, and an insulating film 585 is formed. They are in contact through an opening and are electrically connected. The first electrode layer 587 and the substrate 596 are formed on the substrate 596. Between the second electrode layer 588 and the surrounding area, there is a black region 590a and a white region 590b, and A spherical particle 589 is provided, which includes a cavity 594 filled with liquid. The area surrounding the particle 589 is filled with a filler material 595 such as resin (see Figure 19). The insulating film 585 covering transistor 581 may be a single-layer structure or a multilayer structure. The first electrode layer 587 corresponds to the pixel electrode, and the second electrode layer 588 corresponds to the common electrode. The electrode layer 588 is connected to a common potential line provided on the same substrate as the thin-film transistor 581 and is electrically connected to it. They are connected. A conductive material is placed between substrate 580 and substrate 596 using a common connection part. The second electrode layer 588 and the common potential line can be electrically connected via the particles.

[0208] Furthermore, in the thin-film transistor 581 shown in Figure 19, the gate electrode layer, gate insulating layer, and semiconductor The ends of the conductor layer, source electrode layer, and drain electrode layer are tapered. By tapering the edges of each layer, the covering of the layer formed above each layer is created in contact with it. This improves performance, prevents breakage, and increases the yield of semiconductor devices. This is possible. However, this embodiment is not limited to this configuration, and includes gate electrode layer, gate insulating layer, The edges of the semiconductor layer, or the source electrode layer or drain electrode layer, are not necessarily tapered. It is not necessary. Also, one or more layers may be tapered.

[0209] Furthermore, instead of using twisted ball elements, electrophoretic elements can also be used. A transparent liquid containing positively charged white particles and negatively charged black particles, with a diameter of 1 Microcapsules of approximately 0 μm to 200 μm are used. Between the first electrode layer and the second electrode layer The microcapsules placed in between are subjected to an electric field by the first electrode layer and the second electrode layer. When this happens, the white and black particles move in opposite directions, resulting in either white or black being displayed. Yes, it is possible. An electrophoretic display element is a display element that applies this principle, and an electrophoretic display element is used The device is commonly called electronic paper. Electrophoretic display elements are liquid crystal display elements. Because it has a higher reflectivity than other lights, an auxiliary light is unnecessary, and it consumes less power and is dim. The display unit can be recognized even in location. Also, if power is not supplied to the display unit... Even if there is one, it is possible to retain the image once it has been displayed, so a semiconductor with a display function powered by a power supply When the device (also simply called a display device, or a semiconductor device equipped with a display device) is cut off Even if it doesn't exist, it will be possible to save the displayed image.

[0210] Through the above process, highly reliable electronic paper can be manufactured as a semiconductor device. .

[0211] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0212] (Embodiment 4) In this embodiment, an example of a light-emitting display device is shown as a semiconductor device. The display elements of the display device As an example, we will demonstrate using a light-emitting element that utilizes electroluminescence. Light-emitting devices that utilize luminescence use either organic or inorganic compounds as the light-emitting material. They are distinguished by whether they are physical objects; generally, the former are called organic EL elements, and the latter are called inorganic EL elements. They've found out.

[0213] Organic EL elements emit electrons and holes from a pair of electrodes when a voltage is applied to the light-emitting element. Each of these is injected into a layer containing a luminescent organic compound, and an electric current flows through it. Then, these... Light is emitted when the rear (electrons and holes) recombine. From this mechanism, This light-emitting element is called a current-excited type light-emitting element.

[0214] Inorganic electroluminescent (EL) elements are classified into dispersed inorganic EL elements and thin-film inorganic EL elements based on their element configuration. They are classified as such. Dispersive inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. The luminescence mechanism utilizes donor and acceptor levels, and the donor-acceptor level is the key to this process. This is a receptor recombination type light emission. Thin-film inorganic EL elements sandwich the light-emitting layer between dielectric layers. Furthermore, it has a structure where it is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. This is a localized light emission. Here, we will explain using an organic EL element as the light-emitting element. ru.

[0215] The configuration of the light-emitting element will be explained using Figure 20. Here, the driving TFT is of type n. The cross-sectional structure of a pixel will be explained using the example of a combination. Figures 20(A), 20(B), and 2 The TFT701, TFT711, and TFT721 used in semiconductor devices of type 0(C) are as follows: It can be fabricated in the same manner as the thin-film transistor shown in the embodiment.

[0216] In a light-emitting element, at least one of the anode or cathode is transparent in order to extract light. Here, "transparent" means that the transmittance is sufficiently high, at least at the emission wavelength. As a method for extracting light, a thin-film transistor and a light-emitting element are formed on a substrate, and the substrate and This includes a top-extraction method (top-extraction method) that extracts light from the opposite side, and a method that extracts light from the substrate side. The bottom ejection method (bottom extraction method) extracts light from the substrate side and the opposite side. There are various methods, such as double-sided injection molding (double-sided extraction).

[0217] A top-export type light-emitting element will be explained with reference to Figure 20(A).

[0218] Figure 20(A) shows the case where light emitted from the light-emitting element 702 passes through to the anode 705 side, and the pixel This shows a cross-sectional view. Here, the light-transmitting TFT701 is electrically connected to the drive TFT701. A light-emitting element 702 is formed on the conductive layer 707, and a light-emitting layer 704 is formed on the cathode 703. The anodes 705 are stacked in order. The cathode 703 has a small work function and reflects light. A conductive film can be used. For example, materials such as Ca, Al, Mg-Ag, Al-Li. It is desirable to form the cathode 703 using a material. The light-emitting layer 704 is composed of a single layer. However, it may also be configured so that multiple layers are stacked on top of each other. In total, the electron injection layer, electron transport layer, light emission layer, hole transport layer, and hole injection layer are placed on the cathode 703 in that order. It is good to stack them, but of course, it is not necessary to have all of these layers. The anode 705 absorbs light It is formed using a permeable conductive material. For example, indium oxide containing tungsten oxide. Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide indium tin oxide containing titanium oxide, indium tin oxide (ITO), indium tin oxide Translucent conductive materials such as lead oxide and indium tin oxide with added silicon oxide Use it.

[0219] A structure in which a light-emitting layer 704 is sandwiched between a cathode 703 and an anode 705 is called a light-emitting element 702. Yes, it is possible. In the case of the pixel shown in Figure 20(A), the light emitted from the light-emitting element 702 is indicated by the arrow. As shown, it is ejected towards the anode 705 side. The structure of the light-emitting element 702 is a microcavity structure It can also be constructed in this way. This makes it possible to select the extraction wavelength, thus improving color purity. This can be improved. In this case, the light-emitting element 702 is adjusted according to the extraction wavelength. The thickness of each layer that makes up the structure will be set. In addition, a material having a predetermined reflectivity will be used. It is good to form electrodes.

[0220] An insulating layer containing silicon nitride, silicon oxide, or the like may be formed on the anode 705. This makes it possible to suppress the degradation of the light-emitting element.

[0221] Next, a light-emitting element with a bottom-extrusion method will be explained with reference to Figure 20(B).

[0222] Figure 20(B) shows the case where light emitted from the light-emitting element 712 passes through to the cathode 713 side, and the pixel This shows a cross-sectional view. Here, the light-transmitting TFT711 is electrically connected to the drive TFT711. A cathode 713 of the light-emitting element 712 is formed on the conductive layer 717, and on the cathode 713 The light-emitting layer 714 and the anode 715 are stacked in order. Note that the anode 715 is translucent. Alternatively, a light-shielding film 716 may be provided to cover the anode 715. The cathode 713 is shown in Figure 20. Similar to case A), conductive materials with a small work function can be used. However, the film The thickness should be such that it transmits light (preferably around 5 nm to 30 nm). For example, 20 nm An aluminum film having a certain thickness can be used as the cathode 713. Light-emitting layer 7 14, similar to Figure 20(A), is composed of a single layer, but multiple layers are stacked together. It may be configured as follows. The anode 715 does not need to transmit light, but is similar to Figure 20(A). It may also be formed using a light-transmitting conductive material. The light-shielding film 716 reflects light. Metals and the like can be used, but are not limited thereto. By providing this feature, it is possible to improve the efficiency of light extraction.

[0223] The structure in which the cathode 713 and anode 715 sandwich the light-emitting layer 714 is called the light-emitting element 712. Yes, it is possible. In the case of the pixel shown in Figure 20(B), the light emitted from the light-emitting element 712 is indicated by the arrow. As shown, it is emitted towards the cathode 713 side. The structure of the light-emitting element 712 is a microcavity structure It may also be constructed in this way. Furthermore, an insulating layer may be formed on top of the anode 715.

[0224] Next, a double-sided emission type light-emitting element will be explained with reference to Figure 20(C).

[0225] Figure 20(C) shows a translucent conductive layer 727 electrically connected to the driving TFT 721. A cathode 723 of the light-emitting element 722 is formed on top, and a light-emitting layer 724 is on the cathode 723. The electrodes 725 are stacked in order. The cathode 723 has the same work function as in Figure 20(A). A conductive material with low capacitance can be used. However, its film thickness should be such that it transmits light. For example, an aluminum film with a thickness of 20 nm can be used as cathode 723. The light-emitting layer 724, as in Figure 20(A), may consist of a single layer, or multiple layers may be stacked. It may be configured in such a way. The anode 725 has light-transmitting properties, similar to Figure 20(A). It can be formed using a conductive material.

[0226] The structure in which the cathode 723, the light-emitting layer 724, and the anode 725 are superimposed is called the light-emitting element 722. This is possible. In the case of the pixel shown in Figure 20(C), the light emitted from the light-emitting element 722 is an arrow. As indicated by the mark, light is emitted from both the anode 725 side and the cathode 723 side. Structure of the light-emitting element 722 This can also be a microcavity structure. Furthermore, an insulating layer is formed on top of the anode 725. That's good too.

[0227] Here, we have discussed organic EL elements as light-emitting elements, but inorganic EL elements can also be used as light-emitting elements. It is also possible to provide an L element. In addition, a thin-film transistor controls the driving of the light-emitting element. An example was shown where a converter (TFT for driving light-emitting elements) and a light-emitting element are electrically connected, The configuration involved a TFT for driving the light-emitting element and a TFT for current control connected between them. That's fine.

[0228] Note that the semiconductor device shown in this embodiment is not limited to the configuration shown in Figure 20. Various transformations are possible.

[0229] Next, the appearance of a light-emitting display panel (also called a light-emitting panel), which corresponds to a form of semiconductor device, and The cross-section will be explained with reference to Figure 21. Figure 21 shows the cross-section formed on the first substrate 4501. Thin-film transistor 4509, thin-film transistor 4510, and light-emitting element 4511 are used. These are plan and cross-sectional views of the panel sealed by substrate 4506 and sealing material 4505. Here, Figure 21(A) shows a plan view, and Figure 21(B) shows the same ST as in Figure 21(A). This corresponds to a cross-sectional view.

[0230] Pixel section 4502, signal line driving circuit 4503a, 450 provided on the first substrate 4501 3b, surrounding the scan line drive circuit 4504a and scan line drive circuit 4504b, Material 4505 is provided. Also, pixel section 4502, signal line drive circuit 4503a, signal The line drive circuit 4503b, the scan line drive circuit 4504a, and the scan line drive circuit 4504b are above the first A second substrate 4506 is provided. That is, the pixel unit 4502 and the signal line driving circuit 4503 a, 4503b, scan line drive circuit 4504a, scan line drive circuit 4504b are on the first substrate 4501, the sealing material 4505, and the second substrate 4506 are tightly packed together with the filler material 4507. It is sealed. In this way, it is a protective film (laminate) that is highly airtight and does not release gas. Packaging (enclosing) is done using film, UV-curing resin film, etc., or cover materials. It is preferable to do so.

[0231] Furthermore, a pixel section 4502 and a signal line driving circuit 4503a are provided on the first substrate 4501. The signal line drive circuit 4503b, the scan line drive circuit 4504a, and the scan line drive circuit 4504b are, It has multiple thin-film transistors, and in Figure 21(B), the thin film included in the pixel section 4502 Transistor 4510 and thin-film transistor 450 included in signal line drive circuit 4503a Number 9 is given as an example.

[0232] Thin-film transistors 4509 and 4510 are used in embodiments 1 to 3. The thin-film transistor shown can be applied. In this embodiment, the thin-film transistor The transistor 4509 and thin-film transistor 4510 are n-channel thin-film transistors. .

[0233] Furthermore, 4511 corresponds to a light-emitting element, and the first electrode is a pixel electrode of the light-emitting element 4511. The polar layer 4517 is electrically connected to the source electrode layer or drain electrode layer of the thin-film transistor 4510. They are connected to each other. The configuration of the light-emitting element 4511 is a first electrode layer 4517, a second The structure consists of an electrode 4512, an electroluminescent layer 4513, and a third electrode layer 4514, but in this implementation The configuration is not limited to the form shown. It can be adjusted according to the direction of light extracted from the light-emitting element 4511. The above configuration can be modified as appropriate.

[0234] The partition wall 4520 is formed using an organic resin film, an inorganic insulating film, an organic polysiloxane, or the like. In particular, an opening is formed on the first electrode layer 4517 using a photosensitive material, and the opening It is preferable that the side walls of the section become inclined surfaces with a continuous curvature.

[0235] Even if the electroluminescent layer 4513 is composed of a single layer, it is configured so that multiple layers are stacked. It's okay to be there.

[0236] To prevent oxygen, hydrogen, water, carbon dioxide, etc. from entering the light-emitting element 4511, the third electrode layer 4 A protective film may be formed on 514 and the partition wall 4520. The protective film may be a silicon nitride film, a nitride film, or a nitride film. It can form silicon oxide films, DLC films, and the like.

[0237] Also, signal line drive circuit 4503a, signal line drive circuit 4503b, scan line drive circuit 4504 a. Various signals are supplied to the scan line drive circuit 4504b, the pixel unit 4502, etc., FPC4 It is supplied from 518a and FPC4518b.

[0238] In this embodiment, the connection terminal electrode 4515 is connected to the first electrode layer 4517 of the light-emitting element 4511. Formed from the same conductive film, the terminal electrode 4516 is a thin-film transistor 4509 and a thin-film transistor. An example in which the source electrode layer and drain electrode layer of the converter 4510 are formed from the same conductive film. It's there and showing.

[0239] The connecting terminal electrode 4515 is connected to the terminal of FPC4518a via the anisotropic conductive film 4519. They are electrically connected.

[0240] The substrate located in the direction of light extraction from the light-emitting element 4511 has light-transmitting properties for visible light. It must be so. Substrates that are transparent to visible light include glass plates and plastic plates. Examples include plastic sheets, polyester film, and acrylic film.

[0241] In addition to inert gases such as nitrogen and argon, fillers 4507 can also include UV-curing resins. Thermosetting resins can be used. For example, PVC (polyvinyl chloride), acrylic resins, etc. Lyl, polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral), E VA (ethylene vinyl acetate) and the like can be used. In this embodiment, filling This shows an example of using nitrogen as a material.

[0242] If necessary, polarizers, circular polarizers (including elliptical polarizers), and phase difference plates can be placed on the emission surface of the light-emitting element. Optical films such as λ / 4 plates, λ / 2 plates, and color filters may be provided. An anti-reflective coating may be applied to it. For example, the uneven surface can diffuse reflected light and reduce reflections. It is possible to apply an anti-glare treatment that can reduce glare.

[0243] Signal line drive circuit 4503a, signal line drive circuit 4503b, scan line drive circuit 4504a, The probe drive circuit 4504b is connected to a single-crystal or polycrystalline semiconductor on a separately prepared substrate. It may be formed in this manner. Also, only the signal line drive circuit, or a part thereof, or driving The probe drive circuit alone, or only a part thereof, may be formed and implemented separately in this embodiment. This is not limited to the configuration shown in Figure 21.

[0244] Through the above process, a high-performance light-emitting display device (display panel) can be manufactured.

[0245] Next, we will describe a pixel configuration to which digital time-based gradation driving can be applied and its operation. (Figure) Figure 22 shows an example of a pixel configuration to which digital time-based grayscale driving can be applied. Here, acid n-channel using a crystalline semiconductor layer (In-Ga-Zn-O non-single crystal film) as the channel formation region This example shows the use of two Nell-type thin-film transistors in a single pixel.

[0246] In Figure 22(A), pixel 6400 is a switching thin-film transistor 6401, It includes a thin-film transistor 6402 for driving optical elements, a light-emitting element 6404, and a capacitive element 6403. The switching thin-film transistor 6401 has its gate connected to scan line 6406. Then, the first electrode (either the source electrode layer or the drain electrode layer) is connected to the signal line 6405. The second electrode (the other of the source electrode layer and drain electrode layer) is a thin-film transistor for driving light-emitting diodes. It is connected to the gate of 6402. The thin-film transistor 6402 for driving the light-emitting element is connected to the gate The first electrode is connected to the power line 6407 via the capacitive element 6403, and the first electrode is connected to the power line 6407. The connection is made, and the second electrode is connected to the first electrode (pixel electrode) of the light-emitting element 6404. The second electrode of element 6404 corresponds to the common electrode 6408.

[0247] Note that the second electrode (common electrode 6408 side) and the first electrode (power line 6407) of the light-emitting element 6404 The potential relationship between the two sides can be set so that one side has a higher potential. A potential difference between a high potential and a low potential is applied to the light-emitting element 6404, and the current generated therefrom generates electricity. In order to make the light element 6404 emit light, the potential difference between the high potential and the low potential is the boundary of the light-emitting element 6404 You should set the potentials of each component so that they are equal to or greater than the specified voltage.

[0248] Note that the capacitive element 6403 substitutes for the gate capacitance of the thin-film transistor 6402 used to drive the light-emitting element. It is also possible to omit this. Gate capacitance of thin-film transistor 6402 for driving light-emitting elements This may involve a capacitance being formed between the channel region and the gate electrode layer.

[0249] Here, in the case of a voltage input voltage drive method, the thin-film transistor 6402 for driving the light-emitting element The gate has a thin-film transistor 6402 for driving light-emitting elements, which is either ON or OFF. A video signal like this is input. In other words, the thin-film transistor 6402 for driving the light-emitting element is linear. Operate within the specified area.

[0250] Furthermore, by varying the input signal, analog gradation can be achieved using the same pixel configuration as in Figure 22(A). It is possible to drive it. For example, by making the video signal analog, the light-emitting element 6404 can be driven. By applying a current corresponding to the audio signal, analog grayscale driving can be performed. The video signal is emitted. It is preferable to use a signal such that the thin-film transistor 6402 for driving the element operates in the saturation region. It's nice.

[0251] Furthermore, the potential of the power line 6407 may change in a pulsed manner. In this case, see Figure It is preferable to adopt a configuration like 22(B).

[0252] Furthermore, in the configuration shown in Figure 22(A), the potential of the second electrode of the light-emitting element 6404 of a certain pixel is The potential is often shared with the second electrode of other pixels (the potential of common electrode 6408), but the cathode It is also possible to pattern each pixel and connect each one to a driving thin-film transistor. stomach.

[0253] Furthermore, one aspect of the disclosed invention is not limited to the pixel configuration shown in Figure 22. For example, As shown in Figure 22, switches, resistive elements, capacitive elements, thin-film transistors, and logic circuits have been added to the pixels. You can add roads and other elements.

[0254] This embodiment can be used in appropriate combination with other embodiments.

[0255] (Embodiment 5) Semiconductor devices can be used as electronic paper. Electronic paper displays information. It can be used in electronic devices in all fields. For example, electronic paper can be used in electronic devices. Children's books (e-books), posters, advertisements inside trains and other vehicles, credit cards, etc. It can be applied to the display portion of various cards. An example of an electronic device is shown in Figure 23. This is shown in section 24.

[0256] Figure 23(A) shows poster 2631 made with electronic paper. In the case of printed materials, advertisements are changed manually, but with electronic paper... It allows you to change the ad display in a short amount of time. Furthermore, the display remains stable without any distortion. This can be obtained. Furthermore, the poster may be configured to transmit and receive information wirelessly.

[0257] Figure 23(B) also shows in-vehicle advertisements 2632 for trains and other vehicles. In the case of printed paper, advertisements are changed manually, but using electronic paper... This allows you to change the ad display quickly without requiring a lot of manpower. Also, the display will not break down. A stable image can be obtained without any issues. Furthermore, the poster is configured to transmit and receive information wirelessly. That is also acceptable.

[0258] Figure 24 also shows the e-book 2700. For example, the e-book 2700 has a housing 2 It consists of two enclosures, 701 and enclosure 2703. Enclosure 2701 and enclosure 27 03 is integrated with the shaft portion 2711, and the shaft portion 2711 is used as the axis for opening and closing operations. This configuration makes it possible to perform actions similar to those of a paper book. .

[0259] The display unit 2705 is incorporated into the housing 2701, and the display unit 2707 is incorporated into the housing 2703. It is included. Display units 2705 and 2707 are configured to display a continuation screen. Alternatively, a configuration that displays different screens is also acceptable. For example, text is displayed on the right-hand display unit (display unit 2705 in Figure 24), and the left-hand display unit An image can be displayed on the display unit 2707 in Figure 24.

[0260] Furthermore, Figure 24 shows an example in which the housing 2701 is equipped with an operating unit, etc. For example, housing 2 Unit 701 is equipped with a power supply 2721, operation keys 2723, speaker 2725, and the like. The page can be turned using operation key 2723. Note that the key is located on the same side as the display unit of the casing. It may also be configured to include a board or pointing device. Furthermore, the back of the enclosure or On the side, there are external connection terminals (earphone jack, USB terminal, or AC adapter and USB A configuration that includes terminals that can connect to various cables such as cables, a recording medium insertion section, and so on. It may also be done this way. Furthermore, the eBook 2700 is configured to have the functionality of an electronic dictionary. That's fine.

[0261] Furthermore, the e-book 2700 may be configured to transmit and receive information wirelessly. By wireless means, The system will be configured to allow users to purchase and download desired book data from an e-book server. It is also possible.

[0262] This embodiment can be used in appropriate combination with other embodiments.

[0263] (Embodiment 6) In this embodiment, the pixel configuration and pixel operation applicable to the liquid crystal display device are described below. Let me explain. Note that the operating mode of the liquid crystal element in this embodiment is TN(Twist (ed Nematic) mode, IPS (In-Plane-Switching) mode D, FFS (Fringe Field Switching) mode, MVA (Multi ti-domain Vertical Alignment) mode, PVA(Pat terned Vertical Alignment) mode, ASM (Axiall y Symmetric aligned Micro-cell) mode, OCB(O (Phytically Compensated Birefringence) mode, F LC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, etc. It can be used.

[0264] Figure 25(A) shows an example of a pixel configuration applicable to a liquid crystal display device. Pixel 508 0 has a thin-film transistor 5081, a liquid crystal element 5082, and a capacitive element 5083. The gate of thin-film transistor 5081 is electrically connected to wiring 5085. The first terminal of transistor 5081 is electrically connected to wiring 5084. Thin-film transistor 50 The second terminal of 81 is electrically connected to the first terminal of the liquid crystal element 5082. The second terminal is electrically connected to wiring 5087. The first terminal of the capacitive element 5083 is connected to the liquid crystal element The first terminal of sub 5082 is electrically connected. The second terminal of capacitive element 5083 is connected to wiring 508 It is electrically connected to 6. Note that the first terminal of the thin-film transistor is the source or the drain. It is either one of the two, and the second terminal of the thin-film transistor is the source or drain, as well as the other. This refers to the case where the first terminal of the thin-film transistor is the source. The second terminal of the transistor becomes the drain. Similarly, the first terminal of the thin-film transistor becomes the drain. In this case, the second terminal of the thin-film transistor becomes the source.

[0265] Wiring 5084 can function as a signal line. The signal line is input from outside the pixel. This is wiring for transmitting the signal voltage to pixel 5080. Wiring 5085 is a scan line. It can be made to work. The scan line controls the on / off state of the thin-film transistor 5081. This is the wiring. Wiring 5086 can be used as a capacitance line. A capacitance line is a capacitance line. This is wiring for applying a predetermined voltage to the second terminal of element 5083. Thin-film transistor 50 81 can function as a switch. Capacitive element 5083 is a holding capacitance. It can be made to function. The retaining capacity is such that even when the switch is off, the signal voltage is liquid. This is a capacitive element that ensures a continuous current is applied to the crystal element 5082. Wiring 5087 is opposite It can function as an electrode. The counter electrode is predetermined to the second terminal of the liquid crystal element 5082. These are wires for applying voltage. The functions that each wire can perform are as follows: It is not limited and can have various functions. For example, by changing the voltage applied to the capacitance line. This allows for adjustment of the voltage applied to the liquid crystal element. Since the 5081 only needs to function as a switch, the polarity of the thin-film transistor 5081 is P-type. It can be a channel type or an N-channel type.

[0266] Figure 25(B) shows an example of a pixel configuration that can be applied to a liquid crystal display device. The pixel configuration example shown in Figure 25(A) omits wiring 5087. Furthermore, the second terminal of the liquid crystal element 5082 and the second terminal of the capacitive element 5083 are electrically connected. Except for the difference in the connected points, the configuration is similar to the pixel configuration example shown in Figure 25(A). This is stated. The pixel configuration example shown in Figure 25(B) is particularly characterized by the liquid crystal element being in transverse electric field mode (IP). This applies when the liquid crystal element is horizontally charged. In field mode, the second terminal of liquid crystal element 5082 and the second terminal of capacitive element 5083 are Since they can be formed on the same substrate, the second terminal of the liquid crystal element 5082 and the capacitive element 5 This is because it is easy to electrically connect it to the second terminal of 083. See Figure 25(B). By using the pixel configuration shown, the wiring 5087 can be omitted, thus simplifying the manufacturing process. This allows for a reduction in manufacturing costs.

[0267] The pixel configuration shown in Figure 25(A) or Figure 25(B) is arranged in a matrix. This makes it possible to form the display unit of a liquid crystal display device, which can then display various images. This can be done. Figure 25(C) shows multiple pixel configurations arranged in a matrix, as shown in Figure 25(A). This is a diagram showing the circuit configuration when the display unit is installed. The circuit configuration shown in Figure 25(C) is the one that the display unit has. This is a diagram showing four pixels extracted from multiple pixels. And, column i, row j (i, The pixels located at (where j is a natural number) are denoted as pixels 5080_i,j, and pixels 5080_i,j Wirings 5084_i, 5085_j, and 5086_j are electrically connected to each other. It continues. Similarly, for pixels 5080_i+1,j, wiring 5084_i+1, wiring 5085_j is electrically connected to wiring 5086_j. Similarly, pixels 5080_i,j For +1, wiring 5084_i, wiring 5085_j+1, wiring 5086_j+1 and electricity They are connected electrically. Similarly, for pixels 5080_i+1,j+1, wiring 5084_ i+1 is electrically connected to wiring 5085_j+1 and wiring 5086_j+1. Wiring can be shared by multiple pixels belonging to the same column or row. In the pixel configuration shown in 25(C), wiring 5087 is the counter electrode, and the counter electrode is the counter electrode for all pixels. Since they are common in the basics, the notation for wiring 5087 using natural numbers i or j is This will not be done. However, it is also possible to use the pixel configuration shown in Figure 25(B). Therefore, even if wiring 5087 is listed in the configuration, wiring 5087 is not mandatory, and other wiring It can be omitted by being shared with lines, etc.

[0268] The pixel configuration shown in Figure 25(C) can be driven by various methods. In particular, By being driven by a method called flow drive, the degradation (burn-in) of the liquid crystal elements is prevented. It can be suppressed. Figure 25(D) shows a dot inversion drive, which is one type of AC drive. In the case of this, the timing of the voltage applied to each wiring in the pixel configuration shown in Figure 25(C) This is a diagram representing a chart. By performing dot inversion driving, AC driving is performed. It can suppress the flicker (flickering) that is visible when the image is broken.

[0269] In the pixel configuration shown in Figure 25(C), the pixels electrically connected to wiring 5085_j In this case, the switch is in the selected state (on state) during the jth gate selection period within a 1-frame period. It enters a state (and remains in an unselected state (off state) during other periods. Then, the j-gate selection... After the selection period, a selection period for the (j+1)th gate is provided. The scanning is performed sequentially in this manner. As a result, all pixels are selected sequentially within one frame period. Figure 25(D) shows In the timing chart, a high voltage state (high level) occurs in that pixel. When the switch is in the selected state, the voltage becomes low (low level), which then deselects it. Note that this is the case when the thin-film transistor in each pixel is of the N-channel type, and P-channel type. When a Nell-type thin-film transistor is used, the relationship between voltage and selected state is as follows: The opposite is true.

[0270] In the timing chart shown in Figure 25(D), the jth frame in the kth frame (where k is a natural number) During the gate selection period, a positive signal voltage is applied to the wiring 5084_i used as a signal line. Then, a negative signal voltage is applied to wiring 5084_i+1. And in the k-th frame... During the (j+1)th gate selection period, a negative signal voltage is applied to wiring 5084_i, and wiring 5 A positive signal voltage is applied to 084_i+1. Subsequently, each signal line is selected by the gate selection. A signal with reversed polarity is applied alternately at each selection period. As a result, in the k-th frame... A positive signal voltage is applied to pixels 5080_i,j, and a negative signal voltage is applied to pixels 5080_i+1,j. A negative signal voltage is applied to pixels 5080_i,j+1, and a positive signal voltage is applied to pixels 5080_i+1,j+1. The following signal voltages will be applied to each of them. Then, in the k+1th frame, For each pixel, a signal voltage with the opposite polarity to the signal voltage written in the k-th frame. The voltage is written. As a result, in the k+1th frame, pixels 5080_i,j A negative signal voltage is applied to pixel 5080_i+1,j, and a positive signal voltage is applied to pixel 5080_i,j A positive signal voltage is applied to +1, and a negative signal voltage is applied to pixels 5080_i+1 and j+1, respectively. This will result in different poles being obtained between adjacent pixels within the same frame. A signal voltage is applied, and furthermore, for each pixel, a signal voltage is applied every frame. A driving method in which the polarity is reversed is called dot inversion driving. By dot inversion driving, the liquid crystal This is visually apparent when the entire or a portion of the displayed image is uniform, while suppressing the degradation of the elements. Flicker can be reduced. Note that this includes wiring 5086_j and wiring 5086_j+1. The voltage applied to all wiring 5086 can be set to a constant voltage. The timing chart for the 5084 only shows the polarity of the signal voltage, but in reality It can take on various signal voltage values ​​depending on the displayed polarity. Note that here, 1 dot ( We have described the case where the polarity is reversed for each pixel, but this is not limited to this case, for multiple pixels It is also possible to reverse the polarity. For example, the polarity of the signal voltage written every two gate selection periods. By inverting the signal, the power consumption required for writing the signal voltage can be reduced. Additionally, you can reverse the polarity for each column (source line inversion), and for each row... It is also possible to reverse the polarity (gate line inversion).

[0271] Furthermore, the second terminal of the capacitive element 5083 in pixel 5080 is connected to the first terminal during a single frame period. A constant voltage is required. Here, the wiring 5085 used as the scan line is added to it. The applied voltage is low for most of the frame duration, and a nearly constant voltage is applied. Therefore, the connection destination of the second terminal of the capacitive element 5083 in pixel 5080 is wiring 5 085 is also acceptable. Figure 25(E) shows an example of a pixel configuration that can be applied to a liquid crystal display device. Yes. The pixel configuration shown in Figure 25(E) is different from the pixel configuration shown in Figure 25(C) in terms of wiring. 5086 is omitted, and the second terminal of the capacitive element 5083 within pixel 5080 and the previous one It is characterized by being electrically connected to wiring 5085 in the row. Specifically, In the range shown in Figure 25(E), pixels 5080_i,j+1 and pixels The second terminal of the capacitive element 5083 at 5080_i+1,j+1 is connected to wiring 5085_j They are electrically connected. In this way, the second terminal of the capacitive element 5083 in the pixel 5080 and By electrically connecting it to wiring 5085 in the previous line, wiring 5086 can be omitted. This allows for an improvement in the aperture ratio of the pixels. Note that the second terminal of the capacitive element 5083 is connected The next destination is not necessarily wiring 5085 in the previous line, but can be wiring 5085 in another line. The driving method for the pixel configuration shown in Figure 25(E) is the same as the driving method for the pixel configuration shown in Figure 25(C). The same method as the operation method can be used.

[0272] Furthermore, the capacitive element 5083 and the wiring electrically connected to the second terminal of the capacitive element 5083 are This allows us to reduce the voltage applied to the wiring 5084 used as a signal line. The pixel configuration and driving method will be explained using Figures 25(F) and 25(G). The pixel configuration shown in Figure 25(F) has a wiring ratio of 5 compared to the pixel configuration shown in Figure 25(A). There are two 086s per pixel row, and the second capacitive element 5083 in pixel 5080 It is characterized by the alternating electrical connection to the terminals at adjacent pixels. The original wiring 5086 will be referred to as wiring 5086-1 and wiring 5086-2, respectively. Specifically, in the range shown in Figure 25(F), pixel 5080_i The second terminal of the capacitive element 5083 at j is electrically connected to the wiring 5086-1_j. The second terminal of the capacitive element 5083 in pixels 5080_i+1,j is connected to wiring 5086-2 Electrically connected to _j, the second end of the capacitive element 5083 at pixel 5080_i,j+1 The child is electrically connected to wiring 5086-2_j+1 and to pixels 5080_i+1,j+1. The second terminal of the capacitive element 5083 is electrically connected to the wiring 5086-1_j+1. .

[0273] And, for example, as shown in Figure 25(G), in the k-th frame, pixel 5080_i, If a positive polarity signal voltage is written to j, wiring 5086-1_j selects the jth gate. During this period, the level will be kept low, and after the end of the j-th gate selection period, it will change to a high level. And, maintain that high level for the duration of 1 frame, and in the k+1th frame... After a negative polarity signal voltage is written during the j-th gate selection period, it is changed to a low level. Thus, after a positive polarity signal voltage is written to the pixel, the second capacitance element 5083 By changing the voltage of the wiring electrically connected to the terminal in the positive direction, the liquid crystal element is subjected to The voltage applied can be changed by a predetermined amount in the positive direction. That is, the amount written to the pixel can be changed by that amount. Because the signal voltage to be written can be reduced, the power consumption required for signal writing is reduced. This can be done. Note that if a negative polarity signal voltage is written during the j-th gate selection period... After a negative polarity signal voltage is written to the pixel, electricity is supplied to the second terminal of the capacitive element 5083. By changing the voltage of the connected wiring in the negative direction, the voltage applied to the liquid crystal element is changed. Since it can be changed by a predetermined amount in the negative direction, just like in the case of positive polarity, the pixel The signal voltage to be written can be reduced. In other words, the voltage to the second terminal of the capacitive element 5083 can be reduced. The wires that are electrically connected are those on the same row of the same frame to which a positive polarity signal voltage is applied. The pixels that receive a signal voltage and the pixels to which a negative polarity signal voltage is applied have different wiring configurations. This is preferable. Figure 25(F) shows that a positive polarity signal voltage is written in the k-th frame. Wiring 5086-1 is electrically connected to the pixel, and in the k-th frame, a negative polarity signal is transmitted. This is an example where wiring 5086-2 is electrically connected to the pixel where the voltage is written. However, This is just one example; for instance, a pixel on which a positive polarity signal voltage is written and a pixel on which a negative polarity signal voltage is written. In the case of a driving method in which pixels to be written appear every two pixels, wiring 5086-1 and The electrical connections of wiring 5086-2 are also made alternately every two pixels accordingly. This is preferable. Furthermore, if the same polarity signal voltage is written to all pixels in a row (gateway (Inverted) Wiring 5086 only needs to be one per row. That is, the pixels shown in Figure 25(C). In terms of configuration, as explained using Figures 25(F) and 25(G), the pixels are written A driving method that reduces the incoming signal voltage can be used.

[0274] Next, the liquid crystal element is vertically aligned (VA), such as in MVA mode or PVA mode. This section describes a pixel configuration and driving method that is particularly preferred when the mode is VA mode. The advantages of this device include the elimination of the rubbing process during manufacturing, minimal light leakage when displaying black, and a low operating voltage. It has some desirable features, but the image quality deteriorates when viewed from an angle (narrow viewing angle). This also presents a problem. To widen the viewing angle in VA mode, see Figure 26(A) and Figure 26 As shown in (B), the pixel configuration has multiple subpixels in one pixel. This is effective. The pixel configuration shown in Figures 26(A) and 26(B) has 2 pixels 5080. This is an example showing a case that includes two subpixels (subpixel 5080-1, subpixel 5080-2). Yes, it exists. Furthermore, the number of subpixels in a single pixel is not limited to two; various numbers of subpixels can be used. It is possible to be there. The larger the number of subpixels, the wider the field of view can be. Multiple The subpixels can have the same circuit configuration as each other, and here all subpixels are as shown in Figure 25. The circuit configuration will be explained as being the same as shown in A). Note that the first sub-pixel 5080-1 is It has a thin-film transistor 5081-1, a liquid crystal element 5082-1, and a capacitive element 5083-1. The respective connection relationships shall conform to the circuit configuration shown in Figure 25(A). The second sub-pixel 5080-2 is a thin-film transistor 5081-2, liquid crystal element 5082- 2. The device shall have a capacitive element 5083-2, and the connection relationships between them are shown in Figure 25(A). The circuit configuration will be as specified.

[0275] The pixel configuration shown in Figure 26(A) uses two subpixels that make up one pixel as scan lines. It has two 5085 wires (wire 5085-1, wire 5085-2) and is used as a signal line. This configuration includes one wiring 5084 and one wiring 5086 used as a capacity line. This is how it works. By sharing the signal line and capacitance line between two subpixels, This can improve the output ratio and also simplify the signal line drive circuit. Therefore, manufacturing costs can be reduced, and the number of connection points between the LCD panel and the driver circuit IC can be reduced. This improves yield. The pixel configuration shown in Figure 26(B) consists of two sub-pixels that make up one pixel. Each pixel has one wiring 5085 used as a scan line and one wiring 50 used as a signal line. There are two 84s (wiring 5084-1, wiring 5084-2), and wiring 50 is used as a capacity line. This represents a configuration with one 86. In this way, the scan line and capacitance line are two sub-frames. By sharing the same components as is, the aperture ratio can be improved, and furthermore, the total number of scan lines can be increased. Because it can be reduced, the gate line selection period per gate can be sufficiently reduced even in high-resolution LCD panels. It can be made longer, and the appropriate signal voltage can be written to each pixel.

[0276] Figures 26(C) and 26(D) show the pixel configuration shown in Figure 26(B), where the liquid crystal elements are... This is an example of schematically representing the electrical connection state of each element by replacing it with the shape of the pixel electrodes. In Figures 26(C) and 26(D), electrode 5088-1 represents the first pixel electrode. Electrode 5088-2 represents the second pixel electrode. In Figure 26(C), the first pixel Electrode 5088-1 corresponds to the first terminal of liquid crystal element 5082-1 ​​in Figure 26(B), The second pixel electrode 5088-2 is connected to the first terminal of the liquid crystal element 5082-2 in Figure 26(B). It corresponds to the first pixel electrode 5088-1, which is the base of the thin-film transistor 5081-1. The second pixel electrode 5088-2 is electrically connected to either the drain or the thin film trace. It is electrically connected to either the source or drain of the converter 5081-2. (See Figure 2) In 6(D), the connection relationship between the pixel electrode and the thin-film transistor is reversed. That is, the Pixel electrode 5088-1 is one of the source or drains of thin-film transistor 5081-2. The second pixel electrode 5088-2 is electrically connected to the thin-film transistor 5081-1. It shall be electrically connected to either the source or the drain.

[0277] The pixel configurations shown in Figures 26(C) and 26(D) are arranged alternately in a matrix. By doing so, special effects can be obtained. Such a pixel configuration and its driving method An example is shown in Figures 26(E) and 26(F). The pixel configuration shown in Figure 26(E) is: Figure 26(C) shows the parts corresponding to pixels 5080_i,j and pixels 5080_i+1,j+1. The configuration shown is as follows, and the parts corresponding to pixels 5080_i+1,j and pixels 5080_i,j+1 The configuration is as shown in Figure 26(D). In this configuration, the part shown in Figure 26(F) When driven as shown in the timing chart, during the selection period of the jth gate in the kth frame, The first pixel electrode of pixels 5080_i,j and the second pixel electrode of pixels 5080_i+1,j A positive polarity signal voltage is written to the second pixel electrode of pixels 5080_i,j and pixel 50 A negative polarity signal voltage is written to the first pixel electrode of 80_i+1,j. Furthermore, the kth During the j+1 gate selection period of the frame, the second pixel electrode of pixel 5080_i,j+1 A positive polarity signal voltage is written to the first pixel electrode of pixels 5080_i+1,j+1. The first pixel electrode of pixel 5080_i,j+1 and the second pixel of pixel 5080_i+1,j+1 A negative polarity signal voltage is written to the elementary electrode. In the k+1th frame, each pixel The polarity of the signal voltage is reversed. By doing this, in a pixel configuration that includes subpixels, This achieves a drive equivalent to dot inversion driving, while changing the polarity of the voltage applied to the signal line by 1 frame. Since it can be kept the same within the time period, the power consumption for writing the pixel signal voltage The force can be significantly reduced. Note that this includes wiring 5086_j and wiring 5086_j+1. The voltage applied to all wiring 5086 can be set to a constant voltage.

[0278] Furthermore, with the pixel configuration and driving method shown in Figures 26(G) and 26(H), The magnitude of the signal voltage written to each pixel can be reduced. This method involves making the capacitance lines electrically connected to the multiple subpixels of an element different for each subpixel. That is, by the pixel configuration and driving method shown in Figures 26(G) and 26(H) For subpixels with the same polarity written within the same frame, the capacity within the same row For subpixels that share a common line but have different polarities written within the same frame, the same row The capacitance lines are made different within the system. Then, when writing to each line is finished, each capacitance line The voltage is positive in the sub-pixel where a positive polarity signal voltage is written, and negative polarity signal voltage In sub-pixels where the signal is written, the signal voltage written to the pixel is changed in the negative direction. The size can be reduced. Specifically, the wiring 5086 used as a capacity line is reduced in size. This results in two wires (wiring 5086-1, wiring 5086-2), and the first pixel of pixels 5080_i,j. The electrode and the wiring 5086-1_j are electrically connected via a capacitive element, and the pixel 5080 The second pixel electrodes _i,j and wiring 5086-2_j are electrically connected via a capacitive element. The first pixel electrode of pixel 5080_i+1,j and the wiring 5086-2_j are connected by a capacitance element. Electrically connected via the child, the second pixel electrode of pixel 5080_i+1,j and wiring 508 6-1_j is electrically connected via a capacitive element, and the first of pixels 5080_i,j+1 The pixel electrode and the wiring 5086-2_j+1 are electrically connected via a capacitive element, and the pixel The second pixel electrode of 5080_i,j+1 and the wiring 5086-1_j+1 are connected via a capacitive element. The first pixel electrodes of pixels 5080_i+1,j+1 and wiring 5086 are electrically connected. -1_j+1 and are electrically connected via a capacitive element, and pixel 5080_i+1,j+1 The second pixel electrode and the wiring 5086-2_j+1 are electrically connected via a capacitive element. However, this is just one example; for instance, pixels on which a positive polarity signal voltage is written and pixels on which a negative polarity signal voltage is written. In the case of a driving method where the polarity signal voltage is written to pixels that appear every two pixels, wiring 5 The electrical connections of 086-1 and wiring 5086-2 are also made accordingly, alternating every two pixels. It is preferable that this is done. Furthermore, the same polarity signal voltage is written to all pixels in a row. In the case of gate line inversion, one wire 5086 is sufficient per row. That is, Figure 26( In the pixel configuration shown in E), as explained using Figures 26(G) and 26(H), Furthermore, a driving method that reduces the signal voltage written to the pixels can be used.

[0279] (Embodiment 7) Next, another example of the display device configuration and its driving method will be described. In contrast, a display device using a display element with a slow brightness response (long response time) to signal writing... Let's discuss the case where the display element has a long response time. In this embodiment, a liquid crystal is used as the display element with a long response time. The example given is an element, but the display element in this embodiment is not limited to this, and the signal code Various display elements with slow brightness response to noise can be used.

[0280] In typical liquid crystal displays, the brightness response to signal writing is slow, and the liquid crystal elements are slow to process the signal. Even when pressure is continuously applied, it may take more than one frame to complete the response. Yes, but even if you display a video using such a display element, it cannot faithfully reproduce the video. Furthermore, in the case of active matrix driving, the time required to write a signal to a single liquid crystal element is Typically, the signal writing period (1 frame period or 1 subframe period) is divided by the number of scan lines. This is only a short time (the scan line selection period), and the liquid crystal element cannot respond within this brief time. This is often the case. Therefore, the majority of the response of the liquid crystal element occurs during periods when no signal is being written. This will result in the dielectric constant of the liquid crystal element changing according to the transmittance of the liquid crystal element. However, the fact that the liquid crystal element responds during periods when no signal is written means that the liquid crystal element The dielectric constant of a liquid crystal element changes when there is no exchange of charge with the outside (constant charge state). This means that in the equation (charge) = (capacitance) * (voltage), the charge is constant. As the capacitance changes, the voltage applied to the liquid crystal element will depend on the response of the liquid crystal element. Therefore, the voltage will change from the voltage at the time of signal writing. When driving liquid crystal elements with slow brightness response using an active matrix, the amount of light applied to the liquid crystal elements The voltage cannot, in principle, reach the voltage at the time of signal writing.

[0281] The display device in this embodiment responds to the display element to a desired brightness within the signal writing period. To achieve this, the signal level during signal writing is pre-corrected (corrected signal). This solves the above problems. Furthermore, the response time of the liquid crystal element is high when the signal level is large. The response time of the liquid crystal element becomes shorter the larger the value, so by writing a correction signal, the response time of the liquid crystal element can be shortened. This can also be done. This method of adding a correction signal is also called overdrive. In this embodiment, the overdrive is performed when the signal writing cycle is input to the display device. The period of the image signal (input image signal period T) in Even if it is shorter than ), the signal writing frequency The signal level is corrected according to the period, allowing the display element to reach the desired brightness within the signal writing cycle. It can respond up to a certain point. The signal writing period is the input image signal period T. in Shorter Combining means, for example, dividing one original image into multiple sub-images and combining those multiple sub-images into one frame. One example is displaying them sequentially within a set period.

[0282] Next, in an active-matrix driven display device, the signal level during signal writing is corrected. An example of this method will be explained with reference to Figures 27(A) and (B). Figure 27(A) is The horizontal axis represents time, and the vertical axis represents the signal level at the time of signal writing. This graph schematically represents the time change of the signal level during peak hours. Figure 27(B) shows the horizontal axis as follows: Time is the vertical axis, and the display level is the vertical axis; the time change of the display level in a single display element is schematically represented. This is a graph that illustrates this. Note that if the display element is a liquid crystal element, the signal level during signal writing... The value of "L" can be the voltage, and the display level can be the transmittance of the liquid crystal element. From here on, see Figure 27(A The vertical axis of Figure 27(B) represents voltage, and the vertical axis of Figure 27(B) represents transmittance. Overdrive in this context refers to a situation where the signal level is not voltage (duty cycle, current, etc.). This also includes cases where the display level is less than or equal to the transmittance. In this embodiment, the overdrive is defined as the display level being less than or equal to the transmittance. This also includes cases where external factors (brightness, current, etc.) are present. Note that liquid crystal elements display black when the voltage is 0. This is a normally black type (e.g., VA mode, IPS mode, etc.) and when the voltage is 0. There are normally white types that display white (e.g., TN mode, OCB mode, etc.), but see Figure The graph shown in 27(B) corresponds to both, and in the case of the normally black type, the graph The higher you go on the graph, the greater the transmittance; for normally white types, the lower you go on the graph. The transmittance should increase as you move towards the right. In other words, the liquid crystal in this embodiment The code can be either a normally black type or a normally white type. The timing of signal writing is indicated by a dotted line on the axis, and the next signal is written after the previous signal has been written. The period until the write operation is performed is the retention period F. iThis will be referred to as [this]. In this embodiment, Let i be an integer, representing an index that indicates the respective retention period. Figure 27(A) In (B), i is shown as ranging from 0 to 2, but i can also be any other integer. Possible values ​​(values ​​other than 0 to 2 are not shown). Note that the retention period F i In, image message The transmittance that achieves the brightness corresponding to the number is T i In a steady state, the transmittance T i The electric current that gives Pressure V i This is the case. Note that the dashed line 5101 in Figure 27(A) indicates that overdrive is not performed. This graph shows the time change of the voltage applied to the liquid crystal element in this case, and the solid line 5102 represents the voltage applied to the liquid crystal element in this embodiment. This shows the time variation of the voltage applied to the liquid crystal element when overdrive is performed. Similarly, The dashed line 5103 in Figure 27(B) represents the transmittance of the liquid crystal element when overdrive is not performed. This graph shows the change over time, and the solid line 5104 represents the case when overdrive is performed in this embodiment. This shows the change in transmittance of the liquid crystal element over time. Note that the retention period F i Desired at the end Transmittance T i The difference between this and the actual transmittance is the error α. i This will be the notation used.

[0283] In the graph shown in Figure 27(A), the dashed line 5101 and the solid line 510 during the retention period F0 Both have the desired voltage V0 applied, and as shown in the graph in Figure 27(B), the dashed line Assume that the desired transmittance T0 is obtained for both 5103 and solid line 5104. If a drive is not performed, as shown by the dashed line 5101, at the beginning of the holding period F1... Then the desired voltage V1 is applied to the liquid crystal element, but as already mentioned, the period during which the signal is written This is extremely short compared to the retention period, and for most of the retention period, the state is in a constant charge state. During the holding period, the voltage applied to the liquid crystal element changes along with the change in transmittance. At the end of F1, the voltage becomes significantly different from the desired voltage V1. In this case, The dashed line 5103 in the graph shown in Figure 27(B) also differs significantly from the desired transmittance T1. This results in a loss of accuracy. Consequently, the image signal cannot be displayed faithfully, and the image quality deteriorates. This happens. On the other hand, when overdrive is performed in this embodiment, solid line 510 As shown in 2, at the beginning of the holding period F1, a voltage V1' greater than the desired voltage V1 occurs. This is done so that the liquid crystal element is gradually subjected to the liquid crystal element during the holding period F1. Anticipating that the voltage will change, the voltage applied to the liquid crystal element at the end of the holding period F1 At the beginning of the holding period F1, the desired voltage V1 is set such that the voltage is near the desired voltage V1. By applying the corrected voltage V1' to the liquid crystal element, the desired voltage V1 is precisely applied to the liquid crystal element. It becomes possible to apply this. At this time, the solid line 5104 in the graph shown in Figure 27(B) As shown, the desired transmittance T1 is obtained at the end of the retention period F1. Despite remaining in a constant charge state for most of its duration, within the signal writing cycle... The response of the liquid crystal element can be realized. Next, during the holding period F2, the desired voltage V2 is greater than V1. This shows the case where the retention period is also small, but in this case as well, the retention period F2 is similar to the retention period F1. Anticipating that the voltage applied to the liquid crystal element will gradually change, at the end of the holding period F2 At the beginning of the holding period F2, the voltage applied to the liquid crystal element is set to a voltage near the desired voltage V2. Then, the corrected voltage V2' from the desired voltage V2 is applied to the liquid crystal element. Therefore, as shown by the solid line 5104 in the graph in Figure 27(B), at the end of the retention period F2 The desired transmittance T2 is obtained in the tail. Note that the retention period F1 is V i ga V i-1 If it becomes larger than the corrected voltage V i ' represents the desired voltage V i It will become larger than that. It is preferable that it be corrected to the extent that V i ga V i-1 Compared If it becomes smaller, the corrected voltage V i ' represents the desired voltage V i Compensate so that it becomes smaller than It is preferable that this be corrected. Regarding the specific correction value, the response characteristics of the liquid crystal element should be determined in advance. It can be derived by measurement. As a method of implementation in the device, the correction formula is formulated. A method of incorporating this into a logic circuit, storing the correction value in memory as a lookup table. Methods for reading correction values ​​as needed can be used.

[0284] Furthermore, when actually implementing the overdrive in this embodiment as a device, Various constraints exist. For example, voltage correction must be performed within the rated voltage range of the source driver. It must be. That is, the desired voltage is originally a large value, and the ideal correction voltage If the voltage exceeds the rated voltage of the source driver, it will not be able to be compensated for. The problems in such cases will be explained with reference to Figures 27(C) and (D). Figure 27( C) is similar to Figure 27(A), with the horizontal axis representing time and the vertical axis representing voltage, and for a certain liquid crystal element... This graph schematically represents the time change of the voltage as shown by the solid line 5105. Figure 27(D) Similar to Figure 27(B), the horizontal axis represents time and the vertical axis represents transmittance in a given liquid crystal element. This graph schematically represents the change in transmittance over time, with the solid line 5106. Note that other tables are also available. The notation method is the same as in Figures 27(A) and (B), so the explanation is omitted. Figure 27 (C) and (D) are corrective charges to achieve the desired transmittance T1 during the retention period F1. Since voltage V1' exceeds the rated voltage of the source driver, we have no choice but to set V1' = V1. This indicates a state where sufficient correction cannot be made. At this time, at the end of the retention period F1 The resulting transmittance will be a value that deviates from the desired transmittance T1 by an error α1. However, the error α1 becomes large only when the desired voltage is originally a large value, therefore the error α1 The image quality degradation caused by this phenomenon is often within an acceptable range. However, if the error α1 is large As a result, the error within the voltage correction algorithm also increases. In the voltage correction algorithm, it is assumed that the desired transmittance is obtained at the end of the holding period. When it is fixed, the error α1 is small even though in reality the error α1 is large. Because voltage correction is performed in this manner, an error will be included in the correction during the next holding period F2. As a result, the error α2 also becomes larger. Furthermore, if the error α2 becomes larger, The next error α3 becomes even larger, and so on, the errors continue to increase. As a result, the image quality deteriorates significantly. Overdrive in this embodiment In order to suppress such large errors, the retention period F i to Correction voltage V i When ' exceeds the rated voltage of the source driver, the retention period F i At the end Error αi We estimate the error α i Considering the size, the retention period F i+1 in The correction voltage can be adjusted. This allows for the error α to be corrected. i Even if it becomes large, it is a mistake Difference α i+1 This minimizes the impact on the error, thus reducing the likelihood of large errors. and can be suppressed. In the overdrive of this embodiment, the error α2 can be minimized. An example of this will be explained with reference to Figures 27(E) and (F). Figure 27(E) shows Rough further adjusted the correction voltage V2' in the graph shown in Figure 27(C), and the correction voltage V2'' The time change of voltage in this case is represented by the solid line 5107. Figure 27(F) shows Rough shows the time variation of transmittance when voltage correction is applied, as shown in the graph in Figure 27(E). This represents the correction. In the graph shown in Figure 27(D), the solid line 5106 represents the correction voltage V2'. Overcorrection (correction in situations with large errors) occurs as shown in Figure 27(F). In the graph shown, the solid line 5108 represents the corrected voltage V2' adjusted to account for the error α1. This suppresses overcorrection and minimizes the error α2. Regarding the specific correction values... This can be derived by measuring the response characteristics of the liquid crystal element in advance. Methods for doing this include formulating a correction formula and incorporating it into the logic circuit, and using a lookup method for the correction value. Methods such as saving the data as a cable in memory and reading the correction value as needed can be used. This can be done. And these methods can be used with a corrected voltage V i This is added separately from the part that calculates '. , or correction voltage V i It can be incorporated into the part that calculates '. Note that the error α i―1 of Corrected voltage Vi Correction amount of '' (desired voltage V i The difference between is V i ' supplement It is preferable that it be smaller than the positive amount. That is, |V i ´´-V i |<|V i ´- V i It is preferable to use |.

[0285] Note that error α occurs when the ideal correction voltage exceeds the rated voltage of the source driver. i The value increases as the signal writing period shortens. This is because the liquid crystal decreases as the signal writing period shortens. The response time of the element also needs to be shortened, and as a result, a larger correction voltage is required. Furthermore, as a result of the increased required correction voltage, the correction voltage is increased by the source driver. The frequency of exceeding the rated voltage also increases, resulting in a large error α. i The frequency of occurrence is also high. Therefore, the overdrive in this embodiment has a short signal writing cycle. It can be said that this is effective in certain cases. Specifically, one original image is divided into multiple sub-images, and When displaying multiple sub-images sequentially within a single frame period, the images included in the image are selected from the multiple images. The system detects the movement and generates an intermediate state image of the multiple images, and between the multiple images... When inserting and driving (so-called motion-compensated double-speed drive), or when combining these methods The overdrive in this embodiment is used when the following driving methods are employed. This will have a remarkable effect.

[0286] Furthermore, in addition to the upper limit mentioned above, the rated voltage of the source driver also has a lower limit. For example, One example is when a voltage less than 0 cannot be applied. In this case, the upper limit mentioned above applies. Similarly, an ideal correction voltage cannot be applied, resulting in an error α. i It has grown bigger However, even in this case, the retention period F is the same as in the method described above. i At the end of Error α i We estimate the error α i Considering the size, the retention period F i+1 Correction in The voltage can be adjusted. Note that the rated voltage of the source driver is less than 0. If it is possible to apply a negative voltage, a negative voltage is applied to the liquid crystal element as a correction voltage. It may also be added. By doing so, the potential fluctuation due to the constant charge state can be anticipated, and the holding period F can be calculated. i At the end, the voltage applied to the liquid crystal element is the desired voltage V. i It can be adjusted to a voltage in the vicinity. ru.

[0287] Furthermore, in order to suppress the degradation of the liquid crystal elements, the polarity of the voltage applied to the liquid crystal elements is periodically reversed. This allows for the implementation of so-called reverse drive in combination with overdrive. Furthermore, the overdrive in this embodiment also includes cases where it is performed simultaneously with the reversal drive. For example, if the signal writing period is the input image signal period T in If it is 1 / 2 of that, reverse the polarity. The period of the input image signal and the period T in If the two are of similar magnitude, then the writing of the positive polarity signal and the negative polarity The writing of the sex signal will alternate every two times. In this way, the polarity is reversed. By making the charging period longer than the signal writing period, the frequency of pixel charging and discharging can be reduced. Power consumption can be reduced. However, if the period for reversing the polarity is made too long, the polarity difference... A problem may occur where the brightness difference caused by this is recognized as flicker, so the polarity is reversed. The period is the input image signal period T in It is preferable that it is about the same length as or shorter than that.

[0288] (Embodiment 8) Next, another example of the display device configuration and its driving method will be described. In this case, multiple images are used to interpolate the motion of an image (input image) that is input from outside the display device. The display device generates an image based on the input image, and the generated image (generated image) and the input This section explains how to display images sequentially. Note that the generated images will complement the movement of the input images. By creating images that are similar to the ones shown, the motion of the video can be made smoother, and furthermore, the hall This can improve the problem of video quality degradation due to afterimages caused by motion blur. The following explains the process. Ideally, video display should use the brightness of individual pixels in real time. This is achieved by controlling the pixels in real time, but real-time individual control of pixels is difficult. The problems include the enormous number of circuits, the lack of wiring space, and the massive amount of data in the input images. There are problems that make it difficult to implement. Therefore, displaying video on a display device is difficult. The display shows multiple still images sequentially at a fixed interval, making the display appear as a video. This is being done. This period (in this embodiment, it is called the input image signal period, T in and (represented by) is standardized; for example, 1 / 60 second in the NTSC standard and 1 in the PAL standard. It is 50 seconds. Even with a period of this magnitude, the CRT, which is an impulse-type display device, moves No problems occurred with the image display. However, in hold-type display devices, these standards If a video conforming to this format is displayed as is, the display will be affected by afterimages and other issues caused by the hold-type display. A problem occurs where the image becomes blurry (hold blur). The blurring is due to a mismatch between the unconscious interpolation of human eye movement and the hold-type display. (Discrepancy) is recognized, so the input image information is different from conventional standards. This can be reduced by shortening the period (approaching real-time individual control of pixels). However, shortening the input image signal period would require changes to the standard and would also increase the amount of data. This will be difficult. However, based on a standardized input image signal The display device generates an image that interpolates the motion of the input image, and then uses this generated image to... By interpolating and displaying the input image, it is possible to hold the image without changing the standard or increasing the amount of data. Blurring can be reduced. In this way, the display device generates an image signal based on the input image signal. Furthermore, we will refer to the process of interpolating the movement of an input image as video interpolation.

[0289] The video interpolation method in this embodiment can reduce video blur. The video interpolation method in this embodiment can be divided into an image generation method and an image display method. And, for specific patterns of movement, a different image generation method and / or image display method. By using this method, motion blur in videos can be effectively reduced. (Figure 28(A) and (B) is a schematic diagram illustrating an example of a video interpolation method in this embodiment. In Figures 28(A) and (B), the horizontal axis represents time, and each horizontal position is different. This indicates the timing at which the image is processed. The section labeled "Input" represents the input image signal. This indicates the timing at which the input is received. Here, two images that are adjacent in time are considered: We are focusing on images 5121 and 5122. The input image has a period T. in Enter at intervals of It is done. Note that the period T in The length of one instance is referred to as one frame or one frame duration. There is a part that says "Generation". The part that says "Generation" is the timing when a new image is generated from the input image signal. This represents the raw data generated based on images 5121 and 5122. We are focusing on the completed image, image 5123. The part labeled "Display" is displayed on the display device. This indicates the timing at which the image is displayed. Note that images other than the one being focused on are... Although it is only indicated by a dashed line, by treating it in the same way as the image of interest, this implementation will This allows us to implement one example of a video interpolation method in terms of form.

[0290] An example of the video interpolation method in this embodiment is shown in Figure 28(A), which involves temporal interpolation. The generated image is created based on two adjacent input images, and the two input images are displayed together. By displaying it during the gaps in the timing, video interpolation can be performed. The display period of the displayed image is preferably half the input period of the input image. However, This is not limited to this, and various display periods can be used. For example, the display period can be set to the input period. By shortening the display period to less than 1 / 2, the video can be displayed more smoothly. Alternatively, the display period can be set to the input period. By making the duration longer than half of the period, power consumption can be reduced. Note that in this case, adjacent time intervals The image is generated based on two input images, but the input images used are limited to two. It is not limited to any number, and various numbers can be used. For example, three time-adjacent numbers (more than three is also acceptable). If you generate an image based on the input image (i), it will be more precise than if you use two input images. A well-generated image can be obtained. Note that the display timing of image 5121 is set to Image 5 The display timing relative to the input timing is set to 1 at the same time as the input timing. Although referred to as frame delay, the display timing in the video interpolation method in this embodiment The display timing is not limited to this, and various display timings can be used. For example, input timing The display timing for the ming can be delayed by one frame or more. Therefore, the display timing of the generated image 5123 can be delayed, so image 51 This allows for more time to be allocated to the production of 23, reducing power consumption and manufacturing costs. This leads to... Furthermore, if the display timing is too slow relative to the input timing, the input... The longer the period for which images are retained, the greater the memory capacity required for retention. A display delay of approximately 1 to 2 frames relative to the force timing is preferred. It's nice.

[0291] Here, the specific details of image 5123, which is generated based on images 5121 and 5122, An example of a generation method is described below. To interpolate a video, the motion of the input image is detected. Although necessary, in this embodiment, a block map is used to detect the motion of the input image. A method called the Ching method can be used. However, it is not limited to this, and various other methods can be used. (Methods such as taking the difference between image data and using the Fourier transform can be used.) In block matching, first, the image data for one input image (here, image) The image data (5121) is stored in a data storage means (semiconductor memory, RAM, or other memory circuit). It is stored in memory. Then, the image in the next frame (in this case, image 5122) is stored in multiple regions. Divide the area into regions. The divided regions should be rectangles of the same shape, as shown in Figure 28(A). It is possible to do this, but is not limited to this, and various things (change the shape or size depending on the image) (etc.) can be done. After that, each divided area is stored in the data storage means. The data is compared with the image data of the previous frame (in this case, the image data of image 5121). The system searches for regions where the image data is similar. In the example in Figure 28(A), image 5122 is Search within image 5121 for regions 5124 and regions 512 6 is considered to have been searched. Note that when searching within image 5121, the search range is limited. It is preferable that it be defined. In the example in Figure 28(A), the search range is region 5124. A region 5125, which is about four times the size of the area, has been set. By making it larger, detection accuracy can be improved even in fast-moving videos. Furthermore, if the search is conducted too broadly, the search time becomes enormous, and motion detection... Because this would be difficult to achieve, region 5125 is about 2 to 6 times the size of region 5124. It is preferable that it is so. Subsequently, the explored region 5126 and the region in image 5122 The difference in position from region 5124 is calculated as motion vector 5127. Motion vector 512 7 represents the movement of the image data in region 5124 over a single frame period. To generate an image representing an intermediate state of motion, the direction of the motion vector remains the same, but the magnitude is changed. A modified image generation vector 5128 is created and included in region 5126 in image 5121. By moving the image data according to the image generation vector 5128, image 5123 This process forms image data within region 5129. These processes are then performed on image 512. By performing this operation on all regions in 2, image 5123 can be generated. Then, by sequentially displaying images 5121, 5123, and 5122, the video is interpolated. It is possible. Furthermore, object 5130 in the image is shown in images 5121 and 5122. Although the position is different (i.e., it is moving), the generated image 5123 is image 51 This is the midpoint of the object in images 21 and 5122. Displaying such images This makes the video motion smoother and improves the blurriness of the video caused by afterimages, etc. ru.

[0292] Note that the size of the image generation vector 5128 is determined according to the display timing of image 5123. It can be determined. In the example in Figure 28(A), the display timing of image 5123. This is because it is set to the midpoint (1 / 2) of the display timing between image 5121 and image 5122. The size of the image generation vector 5128 is set to 1 / 2 of the motion vector 5127, In addition, for example, if the display timing is 1 / 3, the size will be set to 1 / 3, and the display time If the timing is 2 / 3 of the way through, the size can be set to 2 / 3.

[0293] Furthermore, by moving multiple regions with various motion vectors in this way, a new image can be created. When creating an image, there are parts of the destination region that have already been moved (overlap), and where There may also be areas (blank spaces) that are not moved from the region. The data can be corrected. One method for correcting duplicate data is to... Prioritize the methods used for averaging, the direction of the motion vector, etc., and then process the data with the highest priority. Regarding the method of using data within the image, one of the following should be prioritized: color (or brightness) or brightness ( For color correction, methods such as taking the average can be used. The image data at that position in image 5121 or image 5122 is generated as is. Method for determining the data, averaging the image data at the relevant position in image 5121 or image 5122 Methods such as taking can be used. Then, the generated image 5123 is used for image generation. By displaying the vector at timings according to its size (5128), the video motion becomes smoother. Furthermore, this can be done, and the problem of video quality degrading due to afterimages caused by hold-and-drive is resolved. The problem can be improved.

[0294] Another example of the video interpolation method in this embodiment is shown in Figure 28(B), which involves time The generated image is created based on two adjacent input images, and the two input images are displayed in a way that the two input images are displayed in When displaying during the time gaps indicated, each display image is further divided into multiple sub-images. By dividing the image into segments for display, interpolation of the video can be performed. In this case, the image display cycle In addition to the advantages of a shorter duration, dark images are displayed periodically (the display method is Advantages can also be obtained by making it closer to a pulse type. In other words, the image display period is when the image input This method reduces the blurring of the video due to afterimages, etc., compared to simply making the length half the force period. Further improvements can be made. In the example in Figure 28(B), "input" and "generation" are shown in Figure 2 The same process as in example 8(A) can be performed, so the explanation will be omitted. Figure 28(B) In the example, "display" means splitting a single input image and / or a generated image into multiple sub-images. This allows for display. Specifically, as shown in Figure 28(B), image 5121 can be displayed. By dividing the image into sub-images 5121a and 5121b and displaying them sequentially, the image appears to the human eye. It is perceived that 5121 is displayed, and image 5123 is sub-images 5123a and 512 By dividing it into 3b sections and displaying them sequentially, the human eye perceives that image 5123 is being displayed. To do this, image 5122 is divided into sub-images 5122a and 5122b and displayed sequentially. Then, the human eye perceives that image 5122 is displayed. In other words, the human eye perceives it as if it were displayed. The image to be recognized will be the same as in the example in Figure 28(A), but the display method will be impulse type This allows for a closer approximation, further improving the clarity of videos caused by afterimages and other issues. In Figure 28(B), the number of sub-image divisions is shown as 2, but this is not limited to this and can vary. Any number of divisions can be used. Note that the timing at which the sub-images are displayed is shown in Figure 28(B In this case, the intervals are equal (1 / 2), but this is not limited to this, and various display timings are possible. It can be used. For example, dark sub-images (5121b, 5122b, 5123b) By making the display timing earlier (specifically, from 1 / 4 to 1 / 2 of the timing), the display This method allows for a more impulse-type approach, thus reducing the blurring of videos caused by afterimages, etc. It can be further improved by delaying the display timing of dark sub-images (specifically, 1 / By doing this at 2 to 3 / 4 of the time, the display period for bright images can be extended. This can improve display efficiency and reduce power consumption.

[0295] Another example of the video interpolation method in this embodiment is detecting the shape of moving objects in an image. This is an example of performing different processing depending on the shape of a moving object. See Figure 28(C) for an example. This indicates the timing of the display, similar to the example in Figure 28(B), but the displayed content is This indicates that the text is moving (also known as scrolling text, subtitles, captions, etc.). It is. Furthermore, the "input" and "generation" can be the same as in Figure 28(B). (Not illustrated.) The blurriness of the video in hold mode is due to the nature of the moving object. The degree of this can vary. It's especially noticeable when the text is moving. Yes. Because when reading moving text, you inevitably follow the text with your eyes. This is because hold blur is more likely to occur. Furthermore, the outlines of the text are clear. Because there are many of these, the blurring caused by hold blur can be further emphasized. This involves determining whether a moving object within the image is text, and if it is text, performing further special processing. Doing so is effective in reducing hold blur. Specifically, moving within the image For an object, contour detection and / or pattern detection are performed to determine if the object is a character. If motion interpolation is determined to be present, motion interpolation will be performed even between sub-images that were split from the same image. Furthermore, by displaying intermediate states of the movement, the movement can be made smoother. If it is determined that it is not text, it will be split from the same image as shown in Figure 28(B). If a sub-image is used, the position of a moving object can be displayed without changing its position. Figure 28(C In the example shown, the region 5131, which was determined to be a character, is moving upwards. However, the position of region 5131 is different in sub-image 5121a and sub-image 5121b. Sub-images 5123a and 5123b, sub-images 5122a and 51 The same applies to 22b. This makes the hold blur particularly noticeable when moving. For text, it can achieve even smoother motion than standard motion-compensated double-speed drive. Therefore, it can further improve the clarity of videos caused by afterimages and other issues.

[0296] (Embodiment 9) Semiconductor devices can be applied to various electronic devices (including amusement machines). For example, television equipment (also called television or television receiver), Computer monitors, digital cameras, digital video cameras, etc. Digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable games Examples include machines, mobile information terminals, sound playback devices, and large game machines such as pachinko machines.

[0297] Figure 29(A) shows an example of a television system. The television system 9600 is, The display unit 9603 is integrated into the housing 9601. The display unit 9603 displays video. It is possible to do so. In addition, here the stand 9605 supports the housing 9601. This shows the configuration.

[0298] The television unit 9600 is operated using the control switches on the housing 9601 and a separate remote control. This can be done using the control unit 9610. The remote control unit 9610 has control keys The 9609 allows you to control the channel and volume, and the information is displayed on the display unit 9603. The video can be controlled. Furthermore, the remote control unit 9610 can be controlled by the remote control unit. A display unit 9607 may be provided to display the information output from 9610.

[0299] The television system 9600 will consist of a receiver, modem, and other components. It can receive more general television broadcasts, and furthermore, it can connect via a modem, either wired or wirelessly. By connecting to the communication network, one-way (sender to receiver) or two-way communication is possible. It is also possible to communicate information (between a sender and a receiver, or between receivers, etc.).

[0300] Figure 29(B) shows an example of a digital photo frame. For example, a digital photo Frame 9700 has a display unit 9703 integrated into the housing 9701. Display unit 970 3 is capable of displaying various images, such as images taken with a digital camera. By displaying data, it can function just like a regular picture frame.

[0301] The Digital Photo Frame 9700 includes an operating unit and external connection terminals (USB terminal, USB port). A structure that includes terminals that can connect to various cables such as B cables, a recording medium insertion section, etc. These components may be incorporated on the same surface as the display unit, but may also be on the sides or back. It is desirable to include it as it improves the design. For example, the recording medium of a digital photo frame. A memory device containing image data captured by a digital camera is inserted into the body insertion site. The system can capture data and display the captured image data on the display unit 9703.

[0302] Furthermore, the digital photo frame 9700 may be configured to send and receive information wirelessly. It is also possible to configure the system to acquire and display desired image data wirelessly.

[0303] Figure 30(A) shows a portable gaming machine, which consists of two cabinets, cabinet 9881 and cabinet 9891. It is connected by a connecting part 9893 so that it can be opened and closed. The housing 9881 has a display unit The 9882 is incorporated, and the display unit 9883 is incorporated into the housing 9891. The portable gaming machine shown in 30(A) also includes a speaker section 9884 and a recording medium insertion section 988 6. LED lamp 9890, input means (operation key 9885, connection terminal 9887, sensor 9 888 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, Chemical substances, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity, gradient, vibration Equipped with functions to measure motion, odor, or infrared radiation, microphones (9889), etc. Of course, the configuration of portable gaming machines is not limited to those mentioned above, and at least semiconductors are included. Any configuration that includes the device is acceptable, and other auxiliary equipment may be provided as appropriate. The portable gaming machine shown in Figure 30(A) has a program or data recorded on the recording medium. It has functions to read data and display it on the display unit, and to communicate wirelessly with other portable gaming machines to exchange information. It has a sharing function. However, the functions of the portable gaming machine shown in Figure 30(A) are not limited to this. It is not fixed and can have various functions.

[0304] Figure 30(B) shows an example of a slot machine, which is a large-scale gaming machine. Slot machine 9 The 900 has a display unit 9903 integrated into the casing 9901. Also, slot machine 9 The 900 also includes other features such as a start lever, stop switch, coin slot, It is equipped with speakers, etc. Of course, the configuration of the slot machine 9900 is not limited to those mentioned above. It is not specified, and it is sufficient if it is a configuration that includes at least a semiconductor device, and other auxiliary equipment is provided as appropriate. It can be configured in this way.

[0305] Figure 31(A) shows an example of a mobile phone. The mobile phone 1000 has a housing 1001 In addition to the display unit 1002 incorporated into it, there are operation buttons 1003, an external connection port 1004, and It is equipped with a speaker (Peaker 1005), microphone (Microphone 1006), etc.

[0306] The mobile phone 1000 shown in Figure 31(A) allows information to be conveyed by touching the display unit 1002 with a finger or the like. You can enter information. You can also perform operations such as making phone calls or composing emails. This can be done by touching the display unit 1002 with a finger or the like.

[0307] The display unit 1002 has three main modes. The first is a display that primarily displays images. The first mode is display mode, the second is input mode which is mainly for inputting information such as characters. The third is display mode. This is a display + input mode, which is a combination of two modes: display mode and input mode.

[0308] For example, when making a phone call or composing an email, the display unit 1002 is used for text input. In this case, the primary text input mode should be used, and you should perform the input operation for the characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 1002. It seems so.

[0309] Furthermore, the mobile phone 1000 contains sensors that detect tilt, such as a gyroscope and an accelerometer. By providing a detection device, the orientation (vertical or horizontal) of the mobile phone 1000 can be determined, and the display The display on the display unit 1002 can be automatically switched.

[0310] Furthermore, the screen mode can be switched by touching the display unit 1002 or by operating the housing 1001. This is done by operating the action button 1003. Also, the type of image displayed on the display unit 1002 It can also be configured to switch between modes. For example, if the image signal displayed on the display unit is a video If the data is in a specific format, it switches to display mode; if it's text data, it switches to input mode.

[0311] Furthermore, in input mode, the signal detected by the optical sensor of the display unit 1002 is detected and displayed If there is no input via touch operation on unit 1002 for a certain period of time, the screen mode will be changed to input mode. You may also control the system to switch from that display mode to a different mode.

[0312] The display unit 1002 can also function as an image sensor. For example, the display unit 10 By touching the palm or fingers to device 02 and capturing images of the palm print, fingerprints, etc., personal authentication can be performed. Furthermore, the display unit may have a backlight that emits near-infrared light or a sensing light that emits near-infrared light. Using the appropriate source, it is also possible to image finger veins, palmar veins, and other veins.

[0313] Figure 31(B) is also an example of a mobile phone. The mobile phone in Figure 31(B) has a housing 9411. The display device 9410 includes a display unit 9412 and an operation button 9413, and the housing 9401 Operation buttons 9402, external input terminal 9403, microphone 9404, speaker 9405, and It has a communication device 9400 which includes a light-emitting unit 9406 that emits light when an incoming call is received, and has a display function. The display device 9410 is detachable from the communication device 9400, which has telephone functionality, in two directions indicated by the arrows. Yes. Therefore, it is also possible to attach the short axes of the display device 9410 and the communication device 9400 together. The long axes of the display device 9410 and the communication device 9400 can also be mounted together. If only the function is required, remove the display device 9410 from the communication device 9400, and the display device The 9410 can also be used independently. The communication device 9400 and the display device 9410 are connected wirelessly. Images or input information can be sent and received via wireless or wired communication, and each is rechargeable. It has a battery.

[0314] This embodiment can be used in appropriate combination with other embodiments. [Explanation of symbols]

[0315] 101 circuit board 102 Conductive film 103 Conductive film 108 Conductive layer 111 Insulating Film 112 Semiconductor film 114 Conductive film 115 Conductive film 117 Contact Holes 123 Insulating layer 124 pixel electrodes 131 Capacitive elements 180 Gray Tone Mask 181 circuit boards 182 Light-shielding part 183 Diffraction grating section 185 Halftone Mask 187 Semi-transparent part 188 Light-shielding part 201 Conductive film 206 Conductive film 207 Conductive film 208 Insulating layer 300°C above room temperature 301 Source Wiring Section 302 Thin-film transistor section 303 Gate wiring section 331 Source Wiring Section 332 Thin-film transistor section 333 Gate wiring section 334 Holding capacity section 454 Planarized insulating layer 580 circuit boards 596 circuit boards 581 Thin-film transistor 585 Insulating film 586 Insulating film 587 Electrode layer 588 Electrode layer 589 Spherical particles 594 Cavity 595 Filling material 701 Drive TFT 702 Light-emitting element 703 Cathode 704 Emitting layer 705 Anode 707 Conductive layer 711 Drive TFT 712 Light-emitting element 713 Cathode 714 Emitting layer 715 Anode 716 Light-shielding film 717 Conductive layer 721 Drive TFT 722 Light-emitting element 723 Cathode 724 Emitting layer 725 Anode 727 Conductive layer 1000 mobile phones 1001 enclosure 1002 Display section 1003 Operation Buttons 1004 External connection port 1005 Speaker 1006 Mike 104a conductive layer 104b Conductive layer 105a Conductive layer 105e conductive layer 106a Resist Mask 106e Resist Mask 107a Conductive layer 107b Conductive layer 107e conductive layer 107f conductive layer 107g conductive layer 108a conductive layer 108b Conductive layer 108e conductive layer 108f conductive layer 108g conductive layer 109a Resist Mask 110a conductive layer 110b Conductive layer 113a Semiconductor layer 113e semiconductor layer 116a Resist Mask 118a Resist Mask 118e Resist Mask 119a Conductive layer 119b Conductive layer 119e conductive layer 119g conductive layer 119h conductive layer 120a conductive layer 120b conductive layer 120e conductive layer 120g conductive layer 120h conductive layer 121a Resist Mask 124e conductive layer 130A Thin-Film Transistor 130B Thin-Film Transistor 131A Capacitive element 2600 TFT substrate 2601 Opposing substrate 2602 Sealant 2603 pixel section 2604 display elements 2605 Colored layer 2606 Polarizing plate 2607 Polarizing plate 2608 Wiring circuit section 2609 Flexible Wiring Board 2610 cold cathode tube 2611 Reflector 2612 Circuit board 2613 Diffuser 2631 Poster 2632 In-car advertisement 2700 eBooks 2701 enclosure 2703 Casing 2705 ​​Display section 2707 Display section 2711 Shaft 2721 Power supply 2723 Operation Keys 2725 Speaker 300a Resist Mask 300e Resist Mask 4001 circuit board 4002 pixel section 4003 Signal Line Drive Circuit 4004 Scan Line Drive Circuit 4005 Sealant 4006 circuit board 4008 LCD 4010 Thin-Film Transistor 400a conductive layer 400-year conductive layer 4011 Thin-film transistor 4013 Liquid crystal element 4014 Wiring 4015 Wiring 4016 Connection terminal electrode 4018 FPC 4019 Anisotropic conductive film 401a Conductive layer 4021 Insulating layer 4030 Pixel Electrode 4031 Counter electrode 4040 wiring 4050 conductive layer 4060 Conductive layer 4501 circuit board 4502 pixel section 4505 Sealant 4506 circuit board 4507 Filling material 4509 Thin-film transistor 4510 Thin-Film Transistor 4511 Light-emitting element 4512 Electrode 4513 Electroluminescent layer 4514 Electrode layer 4515 Connection terminal electrode 4516 Terminal electrode 4517 Electrode layer 4519 Anisotropic conductive film 4520 Bulkhead 5080 pixels 5081 Thin-Film Transistor 5082 Liquid crystal element 5083 Capacitive element 5084 Wiring 5085 Wiring 5086 Wiring 5087 Wiring 5088 pixel electrodes 5101 Dashed line 5102 Solid line 5103 Dashed line 5104 Solid line 5105 Solid line 5106 Solid line 5107 Solid line 5108 Solid line 5121 images 5122 images 5123 images 5124 area 5125 area 5126 area 5127 Vectors 5128 Vectors for image generation 5129 area 5130 Object 5131 area 590a black area 590b White area 6400 pixels 6401 Thin-film switching transistor 6402 Thin-film transistor for driving 6403 Capacitive element 6404 Light-emitting element 6405 signal line 6406 scan lines 6407 Power line 6408 Common electrode 9400 Communication equipment 9401 enclosure 9402 Operation Buttons 9403 External input terminal 9404 Microphone 9405 Speaker 9406 Light-emitting part 9410 Display device 9411 cabinet 9412 Display section 9413 Operation Buttons 9600 Television equipment 9601 enclosure 9603 Display section 9605 Stand 9607 Display section 9609 Operation Keys 9610 Remote Control Unit 9700 Digital Photo Frame 9701 enclosure 9703 Display section 9881 cabinet 9882 Display section 9883 Display section 9884 Speaker section 9885 Input means (operation keys) 9886 Recording medium insertion section 9887 Connection terminal 9888 Sensor 9889 Microphone 9890 LED Lamp 9891 cabinet 9893 Connection section 9900 slot machines 9901 cabinet 9903 Display section 4503a Signal Line Drive Circuit 4503b Signal line drive circuit 4504a Scan line drive circuit 4504b Scan line drive circuit 4518a FPC 4518b FPC 5121a Image 5121b Image 5122a Image 5122b Image 5123a Image 5123b Image

Claims

1. A display device having a drive circuit and a pixel section, A first conductive film having a region in contact with the upper surface of the first insulating film and being arranged to overlap with the channel formation region of the first transistor of the drive circuit via the first insulating film, A second conductive film having a region in contact with the upper surface of the first insulating film and being arranged to overlap with the channel formation region of the second transistor having the pixel portion via the first insulating film, A third conductive film having a region in contact with the upper surface of the first conductive film and arranged to overlap with the channel formation region of the first transistor, The second insulating film has a region in contact with the upper surface of the second conductive film, Each of the first conductive film and the second conductive film is light-transmitting, Each of the first conductive film and the second conductive film has a plurality of laminated conductive films. Display device.

2. A display device having a drive circuit and a pixel section, A first conductive film having a region in contact with the upper surface of the first insulating film and being arranged to overlap with the channel formation region of the first transistor of the drive circuit via the first insulating film, A second conductive film having a region in contact with the upper surface of the first insulating film and being arranged to overlap with the channel formation region of the second transistor having the pixel portion via the first insulating film, A third conductive film having a region in contact with the upper surface of the first conductive film and arranged to overlap with the channel formation region of the first transistor, The second insulating film has a region in contact with the upper surface of the second conductive film, The third conductive film has an overlap with the channel formation region of the first transistor in the region that is in contact with the upper surface of the first conductive film. Each of the first conductive film and the second conductive film is light-transmitting, Each of the first conductive film and the second conductive film has a plurality of laminated conductive films. Display device.

3. A display device having a drive circuit and a pixel section, A first conductive film having a region in contact with the upper surface of the first insulating film and being arranged to overlap with the channel formation region of the first transistor of the drive circuit via the first insulating film, A second conductive film having a region in contact with the upper surface of the first insulating film and being arranged to overlap with the channel formation region of the second transistor having the pixel portion via the first insulating film, A third conductive film having a region in contact with the upper surface of the first conductive film and arranged to overlap with the channel formation region of the first transistor, The second insulating film has a region in contact with the upper surface of the second conductive film, A fixed potential is applied to the first conductive film and the third conductive film. Each of the first conductive film and the second conductive film is light-transmitting, Each of the first conductive film and the second conductive film has a plurality of laminated conductive films. Display device.

4. A display device having a drive circuit and a pixel section, A first conductive film having a region in contact with the upper surface of the first insulating film and being arranged to overlap with the channel formation region of the first transistor of the drive circuit via the first insulating film, A second conductive film having a region in contact with the upper surface of the first insulating film and being arranged to overlap with the channel formation region of the second transistor having the pixel portion via the first insulating film, A third conductive film having a region in contact with the upper surface of the first conductive film and arranged to overlap with the channel formation region of the first transistor, The second insulating film has a region in contact with the upper surface of the second conductive film, The third conductive film has an overlap with the channel formation region of the first transistor in the region that is in contact with the upper surface of the first conductive film. A fixed potential is applied to the first conductive film and the third conductive film. Each of the first conductive film and the second conductive film is light-transmitting, Each of the first conductive film and the second conductive film has a plurality of laminated conductive films. Display device.

5. In any one of claims 1 to 4, The upper surface of the first conductive film has a region that is not in contact with the third conductive film. Display device.

6. In any one of claims 1 to 5, The third conductive film has a metallic material, Display device.

7. In any one of claims 1 to 6, The oxide semiconductor in the channel formation region of the first transistor is an In-O-based metal oxide. Display device.

Images