Optoelectronic devices

Abstract

To provide an at least partially transparent optoelectronic device, which provides an improved emission of light.SOLUTION: An optoelectronic device comprises a plurality of optoelectronic light sources arranged on a first layer, in particular an intermediate layer disposed between a cover layer and a carrier layer. The first layer is made of or at least includes an at least partially transparent material. Each optoelectronic light source of the plurality of optoelectronic light sources has an individual light converter for converting light emitted from a corresponding light source to emit converted light. The light converter of each optoelectronic light source is arranged on the first layer and / or on the corresponding optoelectronic light source.SELECTED DRAWING: Figure 58

Description

[Technical Field]

[0001] This invention is described in DE Application No. 10 2019 133 451.9 dated December 6, 2019, DK Application No. 10 2020 114 478.4 dated February 21, 2020, DE Application No. 10 2020 114 482.2 dated May 29, 2020, DE Application No. 10 2020 114 670.1 dated May 29, 2020, DE Application No. 10 2020 116 479.3 dated June 23, 2020, DE Application No. 10 2020 117 104.8 dated June 29, 2020, and DE Application No. 10 2020 125 dated September 29, 2020. Priority is claimed to be granted by DE Application No. 429.6, DE Application No. 10 2020 125 433.4 dated September 29, 2020, DE Application No. 10 2020 1227 194.8 dated October 15, 2020, and DE Application No. 10 2020 1220 204.9 dated October 15, 2020, the disclosures of which are incorporated herein by reference as a whole.

[0002] This disclosure relates to optoelectronic devices, such as at least partially transparent panes or windows for vehicles. [Background technology]

[0003] For example, information needs to be displayed in a specific area of ​​a vehicle. For instance, the dashboard might display information important to the driver.

[0004] Patent Document 1 discloses a cover for an automobile roof having a layer stack. The layer stack includes a pane extending in a planar direction, a film extending in a planar direction, and an adhesive layer disposed between the pane and the film to fix the film to the pane. Multiple minute light-emitting diodes are arranged in the adhesive layer. Patent Document 1 also discloses an automobile including an automobile roof having such a cover.

[0005] Patent Document 2 discloses a method for manufacturing a composite pane for an automobile. The method comprises providing a first pane and a second pane. The method further comprises the steps of placing a plastic film between the first pane and the second pane, and placing light-emitting diodes (LEDs) on the surface of the plastic film. Furthermore, the method comprises locally heating the plastic film, at least in the area of ​​the LEDs, to a fluid state by a heating source located on or away from the outer surface of the first pane or the second pane. In addition, the method comprises displacing a predetermined amount of the plastic film to introduce the LEDs into the plastic film heated to a fluid state, and the method comprises laminating the first pane and the second pane together with the interposed plastic film after introducing the LEDs into the plastic film.

[0006] Patent Document 3 discloses laminated automotive glazing having an outer glass layer, an inner glass layer, at least one plastic intermediate layer between the outer and inner glass layers, and at least one camera system. The camera system is laminated between the glass layers as an integral permanent component of the laminate.

[0007] Patent Document 4 discloses a vehicle laminate having an outer glass layer, at least an inner glass layer, at least one plastic bonding layer located between the outer glass layer and the inner glass layer, and at least one LED embedded in the plastic bonding layer. Substantially embedded in the plastic bonding layer are wires that form a circuit for supplying power to the LED. [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] DE 10 2017 122 852 A1 [Patent Document 2] US 2019 / 0248122 A1 [Patent Document 3] WO 2019 / 186513 A1 [Patent Document 4] WO 2019 / 008493 A1 [Overview of the project]

[0009] An object of the present invention is to provide an improved optoelectronic device, in particular an optoelectronic device that provides improved light emission and is at least partially transparent. In at least some embodiments, the present invention also aims to integrate a light source and / or a light sensor into at least partially transparent windows and panes, particularly for vehicles.

[0010] In some embodiments of the present invention, an optoelectronic device, for example, a partially transparent pane of a vehicle, Cover layer and Career level, It has an intermediate layer between the cover layer and the carrier layer, At least one, preferably more, photoelectron light sources are arranged on at least one surface of the intermediate layer and / or at least partially embedded in the intermediate layer. The intermediate layer is adapted such that light emitted from the photoelectron light source spreads at least partially within and along the intermediate layer, and exits the intermediate layer in a direction that penetrates the cover layer and / or the carrier layer at a distance less than or equal to a predetermined distance with respect to each photoelectron light source.

[0011] Preferably, an LED (light-emitting diode) or micro-LED (also called a μLED), or an LED chip or μLED chip is used as the light source. Preferably, each layer of the optoelectronic device is made of or contains at least a partially transparent material. Thus, the optoelectronic device may also be at least partially transparent.

[0012] A μLED is, for example, a small LED with an edge length less than 70 μm, particularly less than 20 μm, especially in the range of 1 μm to 10 μm. Other ranges are 10 - 30 μm. As a result, the surface area can be several hundred μm ,

[0018] , , , ,<​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​In some embodiments, the refractive index of the interlayer can be greater than that of the material surrounding the interlayer. This allows the interlayer to function as a light guide.

[0019] In some embodiments, the refractive index of the intermediate layer can be greater than the refractive index of the cover layer and / or the carrier layer, or the refractive index of the adhesive covering the intermediate layer on the side facing the carrier layer and / or the side facing the cover layer.

[0020] In some embodiments, a dispersion or scattering structure and / or a reflective structure can be formed on at least one surface of the intermediate layer and / or embedded at least partially in the intermediate layer. By using these elements, diffusion and / or emission of emitted light can be achieved.

[0021] In some embodiments, the dispersion or scattering structure may be a diffusion center. Diffusion centers are readily available. Alternatively, diffusion centers can be placed at selected locations, areas, or volumes to emit light at each of these locations, areas, or volumes.

[0022] In some embodiments, the diffusion concentration at the diffusion center can be pre-set such that the mean free path of light is greater than the thickness of the intermediate layer. This is an example of a parameter that is easy to pre-set.

[0023] In some embodiments, dispersed or scattering structures can be formed within the intermediate layer by using transparent particles, white particles, holes, density changes, or bubbles, particularly those having a size smaller than the wavelength of the emitted light (especially about 2 μm). These scattering centers can be incorporated into the intermediate layer.

[0024] In some embodiments, dispersed or scattering structures can be placed on the intermediate layer as structured regions, which can be structured in particular by stamping, printing, and / or application of laser light. These are suitable methods for realizing diffusion centers.

[0025] In some embodiments, the reflective structure can be formed near each optoelectronic component. The closer the reflective structure is positioned to the light-emitting element, the more light can be guided and spread into and along the intermediate layer.

[0026] In some embodiments, the reflective structure can be formed on the outer surface of the cover layer and / or the outer surface of the carrier layer. The outer surface faces away from the intermediate layer, while the inner surface faces towards the intermediate layer.

[0027] In some embodiments, the reflective structure can be formed on the outside of the cover layer and / or the outside of the carrier layer. In particular, the reflective structure can be formed on the outer surface of the cover layer and / or the outer surface of the carrier layer. Therefore, the reflective structure can be formed later in the manufacturing process, and even independently of the manufacturing of the optoelectronic device.

[0028] In some embodiments, the reflective structure may be a mirror and / or a metal coating and / or a dielectric coating.

[0029] In some embodiments, the reflective structure can directly cover at least one of the main surfaces of the photoelectron light source. This allows for pre-configuration during the manufacturing of the light source.

[0030] In some embodiments, a combination of one, two, or three or more additional cover layers and intermediate layers can be formed, so that each intermediate layer has one or more photoelectron light sources. Each intermediate layer may include a light source that can emit light of a selected color, in particular red, green, or blue. Thus, an RGB (i.e., red, green, and blue) photoelectron device can be obtained by using three intermediate layers: an intermediate layer having a light source that emits red light, an intermediate layer having a light source that emits green light, and an intermediate layer having a light source that emits blue light.

[0031] In some embodiments, light emitted from each photoelectron source can be at least partially distributed within and along the intermediate layer and can exit the intermediate layer at a predetermined distance relative to each photoelectron source. Within each intermediate layer, a dispersion or scattering structure is formed, in particular having structured scattering particles. Thus, the light can be precisely guided.

[0032] In some embodiments, the dispersion or scattering structure can form different two-dimensional indicator regions, in particular, uniform symbols, colors, or animations.

[0033] In some embodiments, the dispersion or scattering structures in each intermediate layer are offset from one another along the intermediate layer. Therefore, the light extraction of each dispersion or scattering structure can be performed with little or no influence from adjacent dispersion or scattering structures.

[0034] In some embodiments, the intermediate layer(s) can incorporate at least partially transducer material. The location of the transducer material can define the visible light region. Light diffusion and emission can be precisely preset.

[0035] In some embodiments, the photoelectron light source may be an LED, which is either a volume emitter or a surface emitter. The light sources can be controlled individually. Therefore, the light distribution in the photoelectron device can be controlled. Individual control of the light sources can be achieved, for example, by individually controlling the current supplied to each photoelectron light source.

[0036] In some embodiments, the photoelectron light source, particularly the LED, can be made smaller than 300 μm, and especially smaller than 150 μm. Due to such spatial extent, the photoelectron light source is invisible to the human eye.

[0037] In some embodiments, the photoelectron light source may be a chip or a packaged chip. A pure chip can be incorporated into an intermediate layer. A packaged chip can be handled in the manufacturing process.

[0038] In some embodiments, for example, the electrical conductor path used to supply electricity to a light source may be made of a transparent material and / or have a width of less than 300 μm, particularly less than 150 μm. Due to such spatial extent, the conductor path is invisible to the human eye. Therefore, the view seen through the optoelectronic device is not obstructed by the conductor path.

[0039] In some embodiments, the optoelectronic device can be configured to be used as an element in vehicle windows, vehicle lamp covers, vehicle signal light covers, mirror glass, or vehicle body lighting. Optoelectronic devices can have a variety of applications. In "switched on" mode, the device can, for example, illuminate and alter the appearance and / or color of the original lacquer.

[0040] In some embodiments, the intermediate layer, cover layer, and / or carrier layer may comprise or consist of glass or other at least partially transparent materials, such as methacrylic resin (PMMA) and / or polycarbonate (PC).

[0041] In some embodiments, the dispersion structure is titanium dioxide (TiO2). 2 ) and / or zirconium dioxide (ZrO 2 These materials may include ) and provide efficient diffusion properties.

[0042] In some embodiments, the material of the reflective structure may include aluminum and / or silver or a dielectric material and / or a distributed Bragg reflector.

[0043] In some embodiments, the material of the conductive path may include indium tin oxide and / or silver.

[0044] In some embodiments, the intermediate layer may include a transparent plastic material, particularly polyethylene.

[0045] In some embodiments, an optoelectronic device, for example, a partially transparent pane of a vehicle, has a first layer, particularly a thermoplastic substrate, in which at least one electronic or optoelectronic component is partially or completely embedded in this first layer.

[0046] By partially or completely embedding at least one optoelectronic component in the first layer, the topography of the optoelectronic device can be reduced and subsequent processing of the optoelectronic device can be simplified because balancing an optoelectronic component placed on the surface of the first layer (and not embedded in the surface of the first layer) can be technically difficult.

[0047] In some embodiments of the present invention, an optoelectronic device, for example, a partially transparent pane of a vehicle, The first layer, in particular the intermediate layer located between the cover layer and the carrier layer, At least one electronic or optoelectronic component embedded at least partially or completely in the first layer, Having at least one structured conductor layer, The first portion of the conductor layer is positioned on the upper surface of the first layer, and the second portion of the conductor layer is positioned on the upper surface of the electronic or optoelectronic component and is in contact with the electrical contacts of the electronic or optoelectronic component. The electrical contacts, particularly the contact pads, are arranged on the upper surface of the electronic or optoelectronic component. The boundary region is located between the upper surface of the electronic or optoelectronic component and the adjacent upper surface of the first layer. The intermediate portion of the conductor layer extends beyond the boundary region and interconnects the first portion of the conductor layer and the second portion of the conductor layer.

[0048] Preferably, at least one electronic or optoelectronic component is embedded at least partially or completely in the first layer, in particular, this first layer being an intermediate layer positioned between the cover layer and the carrier layer. A conductor layer is positioned on the upper surface of the first layer, on the upper surface of the electronic or optoelectronic component, and in contact with the electrical contacts of the electronic or optoelectronic component. Furthermore, the conductor layer extends beyond the boundary region, particularly the gap between the shell surface of the electronic or optoelectronic component and the first layer, and thus fills this gap. The boundary region, particularly the gap, is preferably small because the distance filled by the conductor layer may be limited by the process of positioning the conductor layer on the upper surface of the first layer, on the upper surface of the electronic or optoelectronic component, and on the electrical contacts of the electronic or optoelectronic component.

[0049] The formulation that something is placed on top of something does not necessarily have to be understood as something being placed directly on top of something else, and may include other elements placed between them. Thus, the formulation that something is placed on top of something else can also be understood as something being placed indirectly above something else. In particular, the formulation that a conductor layer is placed on the top surface of a first layer can be understood as the conductor layer being placed directly on the top surface of the first layer, or as the conductor layer being placed above the top surface of the first layer, but other elements may be placed between the conductor layer and the top surface of the first layer.

[0050] The first layer, particularly the intermediate layer, is preferably at least partially transparent and is preferably positioned between the cover layer and the carrier layer, with at least one of the cover layer and the carrier layer being at least partially transparent. Preferably, each layer of the optoelectronic device is made of or contains at least a partially transparent material. Thus, the optoelectronic device can be at least partially transparent.

[0051] In some embodiments, the intermediate layer may be a foil. The foil can be laminated or fixed to the cover layer and / or carrier layer by an adhesive. The foil may be elastic and therefore can conform to non-planar contours or shapes.

[0052] In some embodiments, the optoelectronic device is at least partially transparent panes, particularly vehicle panes.

[0053] In some embodiments, at least one electronic or optoelectronic component is fully embedded in the first layer such that the top surface of the electronic or optoelectronic component is located within a reference plane extending over the top surface of the first layer. In other words, the top surface of the electronic or optoelectronic component and the top surface of the first layer are coplanar and form a flat top surface.

[0054] In some embodiments, at least one electronic or optoelectronic component is partially embedded in the first layer such that the upper surface of the electronic or optoelectronic component protrudes from the upper surface of the first layer by a height H. The height H is preferably one-third or less of the thickness of the electronic or optoelectronic component. Thus, the electronic or optoelectronic component can be partially embedded in the first layer such that one-third or less of its thickness protrudes from the upper surface of the first layer.

[0055] In some embodiments, the boundary region has a gap between the shell surface of the electronic or optoelectronic component and the side surface of the first layer. The side surface faces the shell surface, and the gap preferably extends circumferentially around the electronic or optoelectronic component, surrounding the shell surface. The shell surface is preferably formed by the outer surface of the electronic or optoelectronic component, excluding the top surface and the bottom surface of the electronic or optoelectronic component facing the top surface.

[0056] In some embodiments, the first layer has at least one recess, and the side surface of the first layer facing the shell surface of an electronic or optoelectronic component is preferably formed by the recess of the first layer. The electronic or optoelectronic component is preferably placed in the recess of the first layer, and therefore, boundary regions and gaps can be formed by the distance between the electronic or optoelectronic component placed in the recess of the first layer and the side surface of the recess of the first layer, respectively.

[0057] In some embodiments, the gap has a conical cross-section. In particular, the distance between the shell surface and the side surface of the first layer facing the shell surface of the electronic or optoelectronic component is greater in the plane extending over the upper surface of the first layer than in the plane below the plane extending over the upper surface of the first layer, which is parallel to the plane extending over the upper surface of the first layer.

[0058] In some embodiments, the gap has a width of less than 10-15 μm. In particular, the gap has a width of less than 10-15 μm in a plane extending over the upper surface of the first layer. Thus, the intermediate portion of the conductor layer extending beyond the boundary region can extend over a distance of 10-15 μm or less. This can be advantageous because the process of arranging the structured conductor layer, such that the first portion of the conductor layer is placed on the upper surface of the first layer and the second portion of the conductor layer is placed on the upper surface of an electronic or optoelectronic component, and the intermediate portion of the conductor layer extends beyond the boundary region, particularly the gap, and interconnects the first and second portions of the conductor layer, can be limited to the maximum distance that can be filled by the intermediate portion of the conductor layer.

[0059] In some embodiments, the gap is filled with a filler, particularly an adhesive. Optionally, the filler is placed on the filled gap, particularly on a plane extending over the upper surface of the first layer. This can be advantageous because, when an electronic or optoelectronic component protrudes from the upper surface, the process of arranging the structured conductive layer can be improved such that a first portion of the conductive layer is placed on the upper surface of the first layer, a second portion of the conductive layer is placed on the upper surface of the electronic or optoelectronic component, and an intermediate portion of the conductive layer extends beyond the boundary region, particularly the gap, and interconnects the first and second portions of the conductive layer.

[0060] The filler may have a planarizing layer to provide a flat surface of the filler on a plane extending over the upper surface of the first layer. When the upper surface of an electronic or optoelectronic component lies in the same plane as the upper surface of the first layer, the process of arranging a structured conductor layer can be further improved such that a first portion of the conductor layer is positioned on the upper surface of the first layer, a second portion of the conductor layer is positioned on the upper surface of the electronic or optoelectronic component, an intermediate portion of the conductor layer extends beyond boundary regions, particularly gaps, and interconnects the first portion of the conductor layer and the second portion of the conductor layer.

[0061] In some embodiments, the filler is positioned between the first layer and the bottom surface of the electronic or optoelectronic component, where the bottom surface is opposite to the top surface of the electronic or optoelectronic component. The filler may, in particular, include or consist of an adhesive for fixing the electronic or optoelectronic component to the first layer. The filler may also include or consist of a temporary adhesive that at least partially or completely evaporates during the process of embedding the electronic or optoelectronic component at least partially or completely in the first layer.

[0062] In some embodiments, the filler material can form a fillet weld between the upper surface of the first layer and the shell surface of the electronic or optoelectronic component. In particular, the filler material in the form of a fillet weld can be partially placed within the gap to partially form a fillet weld between the upper surface of the first layer and the shell surface.

[0063] In some embodiments, a dielectric layer, particularly a dielectric interlayer, is disposed between the structured conductor layer and the first layer, and / or between the structured conductor layer and the upper surface of the electronic or optoelectronic component. Such a dielectric layer helps prevent short circuits between the structured conductor layer and at least one of the first layer and the upper surface of the electronic or optoelectronic component.

[0064] In some embodiments, the first layer comprises plastic, in particular at least one of the following materials: polyethylene (PE), polystyrene (PS), polyvinyl chloride (PVC), polypropylene (PP), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), thermoplastic polyurethane (TPU), thermoplastic polyimide (TPI), acrylonitrile butadiene styrene (ABS), polyphthalamide (PPA), polycarbonate (PC), polyamide (PA), polyphenylene sulfide (PPS), and polyether ether ketone (PEEK).

[0065] In some embodiments, at least one structured conductor layer, used, for example, to supply electricity to at least one electronic or optoelectronic component, may be made of a transparent material and / or may have a wiring width of less than 300 μm, particularly less than 150 μm. Due to such spatial extent, the structured conductor layer is invisible to the human eye. Therefore, the view seen through the optoelectronic device may not be obstructed by the structured conductor layer.

[0066] In some embodiments, the material of at least one structured conductive layer may include indium tin oxide and / or silver. In some embodiments, the structured conductive layer may include or consist of a metal, in particular, one of copper, silver, and gold.

[0067] In some embodiments, the first layer is a light guide layer, and the refractive index of the first layer can be greater than the refractive index of the material surrounding the first layer.

[0068] In some embodiments, the refractive index of the first layer can be greater than that of the cover layer and / or the carrier layer, and / or the refractive index of the adhesive covering the first layer on the side facing the carrier layer and / or the side facing the cover layer. Thus, total internal reflection and associated light guidance within the first layer can be achieved.

[0069] In some embodiments, at least one structured conductor layer is two or more structured conductor layers arranged on top of each other, and adjacent conductor layers are separated from each other by at least one isolation layer (e.g., a polyimide layer). Optionally, each conductor layer includes one or more conductive vias filled with dielectric material and includes conductor paths interconnecting different conductor layers. Thus, a multilayer of redistribution layers (RDLs) and polyimide layers (PIs) can be provided.

[0070] In some embodiments, a second layer, particularly a first release film or laminate, is located on the surface of the first layer opposite to the top surface. A carrier layer, particularly a PET carrier layer, can be located on the second layer opposite to the first layer. Optionally, a third layer, particularly a second release film or photoresist layer, can be located on the carrier layer opposite to the second layer, and optionally, a temporary carrier layer can be located on the third layer opposite to the carrier layer.

[0071] In some embodiments, for example, an electronic chip such as an integrated circuit (IC) is arranged on a structured conductor layer, or in particular on a multilayer stack of redistribution layers (RDLs) and polyimide layers (PIs).

[0072] In some embodiments, the electronic or optoelectronic component includes at least one of the following components: LEDs, μLEDs, flip-chip LEDs, thin-film flip-chip LEDs, IC chips, photosensors, thermal sensors, mechanical sensors, resistors, coils, capacitors, and subassemblies having a selection of these components.

[0073] Preferably, LEDs (light-emitting diodes) or micro-LEDs (also called μLEDs), or LED chips or μLED chips, or flip-chip LEDs or thin-film flip-chip LEDs are used as optoelectronic components. Preferably, each layer of the optoelectronic device is made of or contains at least a partially transparent material. Thus, the optoelectronic components may also be at least partially transparent.

[0074] Advantageously, microlight-emitting diode chips (also called μLED chips) are used as optoelectronic components. Microlight-emitting diodes can form pixels or subpixels and emit light of a selected color.

[0075] A μLED is, for example, a small LED with an edge length less than 70 μm, particularly less than 20 μm, especially in the range from 1 μm to 10 μm. Other ranges are from 10 to 30 μm. Thereby, the surface area can be in the range of hundreds of μm 2 to dozens of μm 2 For example, a μLED can have an edge length of about 8 μm and a surface area of about 60 μm 2 In some cases, the μLED has an edge length of 5 μm or less, and as a result, the surface area is less than 30 μm 2 The general height of such μLEDs is, for example, in the range of 1.5 μm to 10 μm.

[0076] In some embodiments, an electronic chip (e.g., an integrated circuit (IC), etc.), an optical sensor, a thermal sensor, a mechanical sensor, or a subassembly having a selection of these electronic or optoelectronic components can be at least partially or fully embedded in the first layer.

[0077] In some embodiments, a method for manufacturing an optoelectronic device, particularly at least partially transparent paint, for example, of a vehicle, comprises providing at least one electronic or optoelectronic component on the upper surface of an intermediate layer disposed between a first layer, particularly a cover layer and a carrier layer; at least partially or fully embedding the at least one electronic or optoelectronic component in the first layer; providing a structured conductor layer, wherein a first portion of the conductor layer is disposed on the upper surface of the first layer, a second portion of the conductor layer is disposed on the upper surface of the electronic or optoelectronic component, and an intermediate portion of the conductor layer extends across a boundary region to interconnect the first portion of the conductor layer and the second portion of the conductor layer, and providing the structured conductor layer; and has.

[0078] The second portion of the conductive layer can be in contact with the electrical contacts of the electronic or optoelectronic component located on the upper surface of the electronic or optoelectronic component, and the boundary region can be located between the upper surface of the electronic or optoelectronic component and the adjacent upper surface of the first layer.

[0079] In some embodiments, the step of embedding at least one electronic or optoelectronic component in a first layer further includes locally heating the first layer and, in particular, simultaneously pressing the electronic or optoelectronic component onto the upper surface of the first layer, preferably in the same region where at least the first layer has been locally heated.

[0080] In some embodiments, the step of embedding at least one electronic or optoelectronic component in a first layer at least partially or completely includes heating the electronic or optoelectronic component and, in particular, simultaneously pressing the electronic or optoelectronic component onto the upper surface of the first layer. This step may be performed, for example, by using a heated stamp adapted to pick up the electronic or optoelectronic component, heat the component, position the component at each location on the upper surface of the first layer, and press the component into the first layer at each location.

[0081] In some embodiments, the step of embedding at least one electronic or optoelectronic component in a first layer includes heating the first layer to a temperature just below the softening temperature of the material of the first layer, heating the electronic or optoelectronic component, and in particular simultaneously pressing the electronic or optoelectronic component onto the upper surface of the first layer.

[0082] In some embodiments, the step of embedding at least one electronic or optoelectronic component in a first layer at least partially or completely includes deep drawing at least a portion of the first layer to create a recess and pressing the electronic or optoelectronic component into the recess. In particular, the deep drawing tool can be positioned on the surface of the first layer opposite to the top surface, and at least a portion of the first layer can be deep drawn in the direction of the deep drawing tool. This creates at least one recess in the first layer into which the electronic or optoelectronic component is pressed.

[0083] In some embodiments, the process of arranging the first, second, and intermediate portions of the structured conductor layer includes a so-called PICOS (Planar Interconnect On Substrate) process. This PICOS process may include, for example, the following steps: A seed layer, particularly a titanium-copper alloy, is applied to the top surface of at least one electronic or optoelectronic component, and / or the top surface of the first layer, and / or the boundary region, and / or the dielectric layer. Next, a photoresist layer is applied to the seed layer, and the photoresist layer is structured so that the area of ​​the seed layer is exposed. The exposed area of ​​the seed layer is galvanized, and copper-titanium is electrodeposited onto this exposed area of ​​the seed layer. The area of ​​the photoresist layer remaining after structuring and the underlying seed layer are removed. The step of activating the seed layer and the step of applying the next structuring photoresist layer can also be swapped. Thus, galvanization can be performed on a larger surface, followed by structuring.

[0084] Through this procedure, electronic or optoelectronic components can be "framed" by a structured conductive layer, so that the PICOS process can be used to ensure both the mechanical stability and electrical interconnectivity of at least one electronic or optoelectronic component.

[0085] In some embodiments, the step of arranging the first, second, and intermediate portions of the structured conductor layer includes an injection step. For example, a silver or copper nanotube ink is sequentially, in parallel, and locally applied to the top surface of at least one electronic or optoelectronic component and / or the top surface of the first layer and / or the boundary region and / or the dielectric layer to electrically interconnect at least one electronic or optoelectronic component.

[0086] In some embodiments, the step of placing at least one electronic or optoelectronic component on the upper surface of a first layer includes, in particular, bonding the at least one electronic or optoelectronic component to the upper surface of the first layer using an adhesive. The adhesive may be placed between the electronic or optoelectronic component and the upper surface of the first layer, or a fillet weld may be formed between the upper surface of the first layer and the shell surface of the electronic or optoelectronic component. In some embodiments, the adhesive may be a temporary adhesive that at least partially or completely evaporates during the step of embedding at least one electronic or optoelectronic component in the first layer.

[0087] In some embodiments, a method for manufacturing optoelectronic devices, particularly a partially transparent pane for, for example, a vehicle, further comprises the step of placing a dielectric layer between a structured conductor layer and a first layer, and / or between the structured conductor layer and the upper surface of an electronic or optoelectronic component. Such a dielectric layer can prevent short circuits between the structured conductor layer and at least one of the first layer and the upper surface of an electronic or optoelectronic component.

[0088] In some embodiments, a method for manufacturing optoelectronic devices, particularly a pane that is at least partially transparent, for example in a vehicle, further comprises the step of placing an integrated circuit (IC) on a structured conductive layer.

[0089] In some embodiments of the present invention, an optoelectronic device, for example, a partially transparent pane of a vehicle, has a carrier layer and two or more layer segments, particularly an intermediate layer segment disposed between a cover layer and the carrier layer. At least one optoelectronic component is disposed in at least one of the layer segments, the layer segments are arranged adjacent to each other on the carrier layer, and adjacent layer segments are mechanically connected to each other.

[0090] In some embodiments, the layer segments are connected to each other such that the junction regions between the layer segments are at least almost invisible. Therefore, the single-layer segments are at least almost invisible in the finished optoelectronic device.

[0091] Mechanical connections between adjacent layer segments can be related to adjacent layer segments that are mechanically connected to each other by thermal melting of their adjacent boundary regions. Therefore, the process of mechanically connecting adjacent layer segments can include melting of the adjacent boundary regions of the layer segments.

[0092] Layer segments allow for the formation of larger layers, such as so-called intermediate layers, on the carrier layer. Therefore, by using layer segments arranged adjacent to each other on the carrier layer, a larger surface area corresponding to the larger layer can be formed.

[0093] Layer segments can be rather thin and flexible. Therefore, layer segments can be made of more delicate materials (e.g., foil materials). Using smaller layer segments and constructing larger layers on a carrier layer from such segments simplifies the manufacturing process because smaller layer segments are easier to handle than larger layers. Furthermore, arranging layer segments on a curved surface of a carrier layer can be easier than arranging larger single layers.

[0094] In some embodiments, the optoelectronic device has a carrier layer and a plurality of layer segments, and at least one optoelectronic component is located on at least one of the layer segments. The layer segments are arranged adjacent to each other on the carrier layer, and adjacent layer segments are mechanically connected to each other.

[0095] At least one optoelectronic component can be placed on at least one layer segment. In some embodiments, at least one optoelectronic component is placed on each layer segment, on many layer segments, or simply on one layer segment. Thus, there may be layer segments on which no optoelectronic components are placed and / or layer segments on which one or more optoelectronic components are placed.

[0096] In some embodiments, the optoelectronic device forms at least partially transparent panes of a vehicle, particularly the windshield or windows of the vehicle. Thus, the panes, particularly the windshield or windows, have at least one optoelectronic component for at least partially illuminating the panes and / or for displaying information on at least a portion of the panes.

[0097] The optoelectronic device can be part of another surface, for example, a headliner or the outer surface of a vehicle. Therefore, the optoelectronic device can have a three-dimensional shape and / or be positioned on a curved surface. Thus, the headliner or outer surface has at least one optoelectronic component to illuminate the headliner or outer surface at least partially and / or to display information on at least a portion of the headliner or outer surface.

[0098] The manufacturing of small layer segments can be easier and more cost-effective, especially compared to a complete layer the size of, for example, a vehicle windshield. Therefore, by arranging two or more layer segments adjacent to each other on a carrier layer, a simpler and more cost-effective method can be provided for manufacturing optoelectronic devices, especially those with large dimensions. Furthermore, it can be easier to arrange adjacent layer segments on a carrier layer, for example, having a three-dimensional shape, as if each layer segment were the same size as the carrier layer.

[0099] In some embodiments, the optoelectronic device has at least one electrical bridge element, which extends at least between two adjacent layer segments, each having a conductive layer segment, and the electrical bridge element interconnects the conductive layer segments of at least two of the layer segments. In other words, the electrical bridge element may extend between a first layer segment and a second layer segment adjacent to the first layer segment. The first layer segment has a first conductive layer segment, and the second layer segment has a second conductive layer segment. The electrical bridge element interconnects the first conductive layer segment with the second conductive layer segment.

[0100] At least one bridge element can electrically interconnect at least two adjacent layer segments. Each of the at least two layer segments may have a conductive layer segment, and the electrical bridge element can interconnect the conductive layer segments of at least two layer segments.

[0101] In some embodiments, each layer segment is electrically connected to adjacent layer segments by at least an electrical bridge element. Thus, a conductive layer segment on one layer segment can be connected to a conductive layer segment on another layer segment by using an electrical bridge element.

[0102] In some embodiments, the layer segments are flexible and / or bendable. Therefore, in the case of a three-dimensional carrier layer surface, the layer segments can be positioned on the carrier layer surface and conform to the three-dimensional shape of the carrier layer surface. If the optoelectronic device has a three-dimensional shape after the layer segments are positioned on the carrier layer, the risk of breakage of the layer segments is extremely low because the layer segments are bendable.

[0103] In some embodiments, the layer segments have a square or rectangular shape and preferably have a length of at least about 125 mm and a width of at least about 70 mm.

[0104] In some embodiments, the layer segments may have a stripe shape, particularly a rectangular stripe shape, preferably with a length in the range of 1 cm to 100 cm, preferably 10 cm to 40 cm, and a width in the range of 1 cm to 100 cm, preferably 10 cm to 40 cm.

[0105] However, layer segments can take on other suitable forms. For example, layer segments can have the form of regular polygons such as triangles, hexagons, or octagons.

[0106] In some embodiments, the layer segment is at least partially transparent, and optionally, the layer segment is positioned between the cover layer and the carrier layer. Furthermore, at least one of the cover layer and the carrier layer can be at least partially transparent. Thus, the optoelectronic device can be at least partially transparent.

[0107] In some embodiments, the layer segment comprises or consists of a material such as polyvinyl butyral (PVB) or ethylene vinyl acetate (EVA). In particular, the layer segment can be a foil made of a foil material such as polyvinyl butyral (PVB) or ethylene vinyl acetate (EVA). The foil is elastic and can conform to non-planar contours or shapes.

[0108] The layer segments may include or consist of other plastics, in particular, preferably other resins having strong bonding properties, optical transparency, adhesion to many surfaces, toughness, and flexibility.

[0109] In some embodiments, layer segments can be laminated or fixed to a carrier layer by an adhesive. Thus, mechanical connections between layer segments can be provided, for example, by fixing the layer segments to the carrier layer.

[0110] In some embodiments, the carrier layer is at least partially transparent. In particular, the carrier layer may include or consist of glass or other at least partially transparent materials such as methacrylate (PMMA) and / or polycarbonate (PC).

[0111] In some embodiments, at least one optoelectronic component may be an LED, which is either a volume emitter or a surface emitter. At least one optoelectronic component can be controlled individually. Therefore, the light distribution in the optoelectronic device can be controlled. Individual control of at least one optoelectronic component can be achieved, for example, by individually controlling the current supplied to each optoelectronic component.

[0112] In some embodiments, at least one optoelectronic component, particularly an LED, can be less than 300 μm, and especially less than 150 μm. Due to such spatial extent, at least one optoelectronic component is invisible to the human eye.

[0113] In some embodiments, micro-LEDs (also called μLEDs) or μLED chips are used as optoelectronic components. μLEDs are small LEDs, for example, with edge lengths of less than 70 μm, particularly less than 20 μm, and especially in the range of 1 μm to 10 μm. Other ranges are 10 to 30 μm. This results in a surface area of ​​several hundred μm. 2 From tens of micrometers 2 This can be the case. For example, a μLED has an edge length of approximately 8 μm and approximately 60 μm. 2 It can have a surface area of ​​30 μm. In some cases, the μLED has an edge length of 5 μm or less, and as a result, the surface area is 30 μm. 2 The height will be less than this. The typical height of such a μLED is, for example, in the range of 1.5 μm to 10 μm.

[0114] Microlight-emitting diode (μLED) chips (also called μLED chips) can be used as optoelectronic components. Microlight-emitting diodes can form pixels or subpixels and emit light of a selected color.

[0115] Optoelectronic components such as LEDs or μLEDs do not need to be packaged. Therefore, such optoelectronic components can be bare dies.

[0116] In some embodiments, the electrical bridge element has at least partially transparent and / or flexible tape. Optionally, the tape has at least one conductive path for interconnecting conductive layer segments of two adjacent layer segments. Such transparent and / or flexible tape having at least one conductive path can be provided, for example, with the help of an inkjet process.

[0117] In some embodiments, the electrical bridge element is provided on a cover layer. The electrical bridge element may have the form of a conductor path. The cover layer is placed on the layer segments after the layer segments are placed on the carrier layer. The electrical bridge element on the cover layer then interconnects the conductor layer segments of two adjacent layer segments.

[0118] In some embodiments, the planarization layer is located on a layer segment or a cover layer. The planarization layer may contain or consist of a material such as polyvinyl butyral (PVB) or ethylene vinyl acetate (EVA). In particular, the planarization layer may be a foil made of a material such as polyvinyl butyral (PVB) or ethylene vinyl acetate (EVA). Alternatively, the planarization layer may contain or consist of other plastics, in particular preferably other resins having strong bonding properties, optical transparency, adhesion to many surfaces, toughness, and flexibility.

[0119] In some embodiments, a method for manufacturing an optoelectronic device, particularly a partially transparent pane, for example in a vehicle, includes arranging two or more layer segments adjacent to each other on a carrier layer. At least one optoelectronic component can be placed on at least one of the layer segments, and the method comprises the following steps: The process of mechanically connecting adjacent layer segments to each other, A step of arranging at least one electrical bridge element, wherein the bridge element extends between two adjacent layer segments, each of the two layer segments having a conductor layer segment, and the electrical bridge element interconnects the conductor layer segments of the two layer segments; It further includes at least one of the following.

[0120] In some embodiments, the step of mechanically connecting adjacent layer segments to each other is performed before positioning at least one electrical bridge element such that the electrical bridge element extends between two adjacent layer segments. Thus, the mechanical connection between adjacent layer segments is made before the electrical interconnection between two adjacent layer segments is made.

[0121] In some embodiments, the step of positioning at least one electrical bridge element so that it extends between two adjacent layer segments is performed before the step of mechanically connecting the adjacent layer segments to each other. Thus, an electrical connection is made between adjacent layer segments before a mechanical connection is made between them. By positioning at least one electrical bridge element so that it extends between two adjacent layer segments, at least a small mechanical connection can already be provided, and this mechanical connection can be reinforced by the subsequent step of mechanically connecting the adjacent layer segments to each other.

[0122] In some embodiments, only the step of mechanically connecting adjacent layer segments to each other is performed, and in some embodiments, only the step of positioning at least one electrical bridge element such that the electrical bridge element extends between two adjacent layer segments is performed.

[0123] In some embodiments, the step of mechanically joining adjacent layer segments to each other includes, in particular, the step of at least partially melting the opposing edge regions of the adjacent layer segments using a laser or a heating device (e.g., an autoclave or a hot plate). In particular, the step of mechanically joining adjacent layer segments to each other is performed by laser welding. In some embodiments, the step of mechanically joining adjacent layer segments to each other includes the step of uniformly melting the entire adjacent layer segment. This is preferably done by using a heating device (e.g., an autoclave or a hot plate).

[0124] In some embodiments, layer segments are arranged adjacent to each other on a carrier layer such that adjacent layer segments are spaced apart by a predetermined distance from each other, particularly before the process of mechanically connecting adjacent layer segments to each other is performed. Optionally, the predetermined distance is in the range of 0 to 1500 μm. In particular, the predetermined distance depends on the flow behavior of the material of the adjacent layer segments.

[0125] In some embodiments, the layer segments form a uniform, flat layer, particularly after a process is performed to mechanically connect adjacent layer segments to one another.

[0126] In some embodiments, the step of arranging at least one electrical bridge element includes an inkjet process. Thus, an ink, such as a silver or copper nanotube ink, is applied sequentially, in parallel, and locally to the upper surface of the conductive layer segments of adjacent layer segments.

[0127] In some embodiments of the present invention, a method for manufacturing an optoelectronic device, for example, a partially transparent pane for a vehicle, involves the following steps: A step of placing at least one optoelectronic component on the upper surface of a first layer, in particular an intermediate layer placed on or between a cover layer and a carrier layer, A step of providing a conductive layer on the upper surface and on the at least one optoelectronic component, A step of structuring the conductor layer, wherein the resulting structured conductor layer includes an electrical conductor path for supplying electricity to the at least one optoelectronic component by the use of the structured conductor layer, Includes.

[0128] For example, by providing a conductive layer over a wide area of ​​the upper surface of a first layer and then structuring the conductive layer, a cost-effective production process can be provided with relatively few process steps for many formats of optoelectronic devices. Thus, the manufacturing cost increases with the number of chips placed on the first layer and decreases with the size of the first layer. This can be particularly advantageous for larger areas where the optoelectronic components have only partial coverage of the first layer and therefore have a so-called large "dead area".

[0129] In some embodiments, the process of structuring the conductive layer may include lithographic structuring of the conductive layer, in particular, photolithographic structuring of the conductive layer. By using a photomask (also called an optical mask), a geometric pattern of light can be transferred to a photosensitive, in particular, light-sensitive chemical photoresist on the conductive layer. Light irradiation chemically alters the photoresist. Part of the photoresist can be removed with a solution called a developer. Positive photoresist is a common type and becomes soluble in the developer after exposure. With negative photoresist, the unexposed areas become soluble in the developer. A series of chemical processes then allow the exposure pattern to be etched into the conductive layer, thereby obtaining the desired structured conductive layer.

[0130] In some embodiments, the step of structuring the conductive layer may include additive printing the conductive layer onto the top surface of the optoelectronic component and the top surface of the first layer.

[0131] In some embodiments, the method may include a step of detecting the position of at least one optoelectronic component, particularly using automated optical inspection (AOI). This ensures that the optoelectronic component, in particular at least one electrical contact located on the upper surface of the optoelectronic component, is aligned with the structured conductor layer in a later step. Alternatively, a placement process can be used that provides sufficient precision to align the optoelectronic component, in particular at least one electrical contact located on the upper surface of the optoelectronic component, with the structured conductor layer. Thus, AOI can be avoided.

[0132] In some embodiments, the step of providing a conductive layer includes placing the conductive layer on the top surface of a first layer and / or on at least one optoelectronic component. Optionally, a lamination device can be used to laminate the conductive layer on the top surface of the first layer and / or on at least one optoelectronic component. In some embodiments, a heated roll laminator can be used to laminate the conductive layer on the top surface of the first layer and / or on at least one optoelectronic component, particularly in a roll-to-roll process.

[0133] In some embodiments, the step of providing a conductive layer on the upper surface of a first layer and / or on at least one optoelectronic component includes the step of embedding at least one optoelectronic component at least partially in the first layer. This allows at least one optoelectronic component to be pressed at least partially into the first layer, and at the same time, the conductive layer can be positioned on the upper surface of the first layer and / or on at least one optoelectronic component. Thus, the step of embedding at least one optoelectronic component in the first layer and the step of positioning, in particular lamination, the conductive layer on the upper surface of the first layer and / or on at least one optoelectronic component can be performed simultaneously. In particular, at least one optoelectronic component and / or the first layer can be heated to a suitable temperature, and at least one optoelectronic component can be pressed into the first layer as soon as or after reaching that temperature.

[0134] In some embodiments, at least one optoelectronic component can be embedded in the first layer such that the upper surface of the optoelectronic component is located in a plane defined by the upper surface of the first layer. Thus, a conductive layer can be placed on a substantially flat surface formed by the upper surface of the first layer and the upper surface of at least one optoelectronic component.

[0135] In some embodiments, the step of arranging the conductive layer on the upper surface of the first layer and / or on at least one optoelectronic component is: To provide a flat conductive layer on the upper surface of at least one optoelectronic component, Deep drawing of a conductive layer to cover at least one optoelectronic component and the upper surface of the first layer, Includes.

[0136] In some embodiments, at least one optoelectronic component may be positioned on the upper surface of the first layer so as not to be embedded in the first layer. The conductive layer may be positioned on the upper surface of the first layer and / or on at least one optoelectronic component such that a first portion of the conductive layer is positioned on the upper surface of the first layer, a second portion of the conductive layer is positioned on the upper surface of the optoelectronic component, and an intermediate portion of the conductive layer is positioned on the side of the optoelectronic component, interconnecting the first and second portions of the conductive layer.

[0137] In some embodiments, the first layer comprises or consists of an elastic material such as polyvinyl butyral (PVB), ethylene vinyl acetate (EVA), or thermoplastic polyurethane (TPU). Optionally, the first layer may be a foil of the elastic material. The elastic first layer can conform to non-planar contours or shapes. The first layer may comprise or consist of other plastics other than PVB, particularly preferably other resins having strong bonding properties, optical transparency, adhesion to many surfaces, toughness, and flexibility, such as ethylene vinyl acetate (EVA).

[0138] In some embodiments, the first layer may be an intermediate layer positioned between the cover layer and the carrier layer. At least one of the cover layer and the carrier layer may be at least partially transparent and may include or consist of glass or other at least partially transparent materials, such as methacrylate (PMMA) and / or polycarbonate (PC).

[0139] Using PVB or EVA foil as the first layer can provide a smooth lamination between the cover layer and the carrier layer (especially between two glass layers).

[0140] In some embodiments, the step of placing at least one optoelectronic component on the upper surface of a first layer includes adhering at least one optoelectronic component to the upper surface of the first layer using an adhesive. The inherent tackiness of the PVB film at high temperatures can be used to hold at least one optoelectronic component in place on the upper surface of the first layer.

[0141] In some embodiments, at least one optoelectronic component may be an LED, which is either a volume emitter or a surface emitter. At least one optoelectronic component can be controlled individually. Thus, in at least some embodiments, a desired light distribution can be obtained from the optoelectronic device. Individual control of at least one optoelectronic component can be achieved, for example, by individually controlling the current supplied to each optoelectronic component.

[0142] In some embodiments, at least one optoelectronic component, particularly an LED, can be less than 300 μm, and especially less than 150 μm. Due to such spatial extent, at least one optoelectronic component is invisible to the human eye at reading distance.

[0143] In some embodiments, micro-LEDs (also called μLEDs) or μLED chips can be used as optoelectronic components. μLEDs are small LEDs, for example, with edge lengths of less than 70 μm, particularly less than 20 μm, and especially in the range of 1 μm to 10 μm. Other ranges are 10 to 60 μm. This results in a surface area of ​​several hundred μm. 2 From tens of micrometers 2 This can be the case. For example, a μLED has an edge length of approximately 50 μm and approximately 2500 μm 2 It can have a surface area of ​​30 μm. In some cases, the μLED has an edge length of 5 μm or less, and as a result, the surface area is 30 μm. 2 The height will be less than this. The typical height of such a μLED is, for example, in the range of 1.5 μm to 10 μm.

[0144] Microlight-emitting diode (μLED) chips (also called μLED chips) can be used as optoelectronic components. Microlight-emitting diodes can form pixels or subpixels and emit light of a selected color.

[0145] In some embodiments, in particular, all electrical contacts (especially contact pads) of at least one optoelectronic component are located on the upper surface of the optoelectronic component. The optoelectronic component can be positioned on the upper surface of a first layer such that the electrical contacts face away from the upper surface of the first layer. Thus, at least one optoelectronic component can be formed as a flip-chip LED, a thin-film flip-chip LED, or a flip-chip μLED.

[0146] In some embodiments, the conductive layer includes or comprises a conductive material layer, such as copper, gold, or silver. Optionally, the conductive material layer includes conductive nanoparticles, such as silver and / or gold and / or copper nanoparticles.

[0147] In some embodiments, the conductive layer comprises or consists of a photostructureable nanoparticle paste containing conductive nanoparticles, such as silver and / or gold and / or copper nanoparticles.

[0148] In some embodiments, the conductive layer includes a second conductive material layer, in addition to the conductive material layer, which comprises or consists of a conductive adhesive or solder. The second conductive material layer may, in particular, comprise or consist of an adhesive, solder, or solder glue. The second conductive material layer may have isotropic or anisotropic conductivity. The second conductive material layer may be placed on the conductive material layer before providing the conductive layer on the top surface of the first layer and / or on at least one optoelectronic component. Alternatively, the second conductive material layer may be placed on the top surface of the first layer and on at least one optoelectronic component, and the first conductive material layer may be provided on the second conductive material layer.

[0149] In some embodiments, the method includes providing electrical contact elements made of conductive adhesive or solder in particular. The electrical contact elements are provided on at least the electrical contacts of an optoelectronic component. The electrical contacts, in particular the contact pads, can be located on the upper surface of the optoelectronic component. In particular, the electrical contact elements can be located only on the electrical contacts and not on the exposed areas of the upper surface of the first layer and / or the upper surface of at least one optoelectronic component.

[0150] In some embodiments, the method includes mechanically and electrically interconnecting a conductive layer with electrical contacts of an optoelectronic component, the electrical contacts, particularly contact pads, may be located on the upper surface of the optoelectronic component. In some embodiments, the step of mechanically and electrically interconnecting the conductive layer with the electrical contacts of the optoelectronic component may be performed before the step of structuring the conductive layer. Alternatively, in some embodiments, the step of mechanically and electrically interconnecting the conductive layer with the electrical contacts of the optoelectronic component may be performed after the step of structuring the conductive layer.

[0151] In some embodiments, the step of mechanically and electrically interconnecting a conductive layer with the electrical contacts of an optoelectronic component may include the step of punctually laser welding the conductive layer in the region above the electrical contacts. In particular, the punctual laser welding of the conductive layer and the electrical contacts may be performed only in the region above the electrical contacts so that the conductive layer can be mechanically and electrically interconnected with the electrical contacts of the optoelectronic component.

[0152] In some embodiments, the step of mechanically and electrically interconnecting a conductive layer with the electrical contacts of an optoelectronic component may include heating the conductive layer to a temperature above the melting / reaction temperature of a conductive adhesive or solder. The conductive adhesive or solder may be placed on at least the electrical contacts of the optoelectronic component, or as a second conductive material layer on the upper surface of the first layer and on at least one optoelectronic component. In particular, after the conductive adhesive or solder has cooled, it can provide a mechanical and electrical interconnection between the conductive layer and the electrical contacts of the optoelectronic component.

[0153] In some embodiments, following the step of structuring a conductive layer, a step of sintering a photostructureable nanoparticle paste containing conductive nanoparticles, particularly conductive nanoparticles such as silver and / or gold and / or copper nanoparticles, may be performed. The sintering step may include an oven process, provided that the first layer and at least one optoelectronic component can withstand a temperature of at least about 140°C. Alternatively, the sintering step may include a photonic curing process.

[0154] In some embodiments, the method further includes the step of arranging a planarization layer on a first layer and / or a conductor layer. The planarization layer may include or consist of an elastic material, such as polyvinyl butyral (PVB). Optionally, the planarization layer may be a foil of an elastic material. The foil is resilient and can conform to non-planar contours or shapes. Thus, the foil can be arranged, for example, on a curved carrier surface. Alternatively, the planarization layer may include or consist of other plastics, in particular preferably other resins having strong bonding, optical transparency, adhesion to many surfaces, toughness, and flexibility, such as ethylene-vinyl acetate (EVA). In some embodiments, at least one optoelectronic component and / or a structured conductor layer can be embedded in the planarization layer.

[0155] In some embodiments, the conductor layer can be provided on the upper surface of a first layer, particularly the entire upper surface of the first layer, or on the upper surface of a temporary carrier layer. The conductor layer can then be structured such that the resulting structured conductor layer includes an electrical conductor path. At least one optoelectronic component can then be placed on the structured conductor layer such that the electrical conductor path is connected to the electrical contacts of at least one optoelectronic component. Such a method may be called "chips last" because at least one optoelectronic component is placed on the structured conductor layer after the conductor layer has been structured.

[0156] In some embodiments, a method for manufacturing an optoelectronic device, particularly a transparent pane for, for example, a vehicle, involves the following steps: A step of providing a conductor layer on a first layer, in particular an intermediate layer disposed between a cover layer and a carrier layer, A step of structuring the conductor layer, wherein the resulting structured conductor layer includes an electrical conductor path suitable for supplying electricity to at least one optoelectronic component, The steps include: placing at least one optoelectronic component on the structured conductor layer; Includes.

[0157] In some embodiments, an electrical contact element is provided on a structured conductor layer to electrically connect the contacts of at least one optoelectronic component to the structured conductor layer. The contact element is provided on the structured conductor layer such that the contact element is aligned to the contacts of at least one optoelectronic component.

[0158] In some embodiments, contact elements are provided at defined positions on a structured conductive layer. These positions are defined so that the contact elements are aligned with the electrical contacts of the optoelectronic component. Each optoelectronic component may be, for example, a flip chip having two electrical contacts at defined positions on its bottom surface. The contact elements for such a flip chip are arranged on the structured conductive layer such that each contact of the flip chip contacts one of the contact elements.

[0159] In some embodiments, the contact elements are provided by, for example, applying solder paste onto a structured conductor layer. In particular, in some embodiments, the method includes applying a solder material comprising, for example, a mixture of tin, silver, and copper (SnAgCu) as SAC.

[0160] In some embodiments, the method further includes the step of heating the contact elements using photonic pulses. A broadband light-emitting device, such as a high-pressure xenon lamp, can be used to generate the photonic light pulses. In particular, in some embodiments, the method further includes the step of soldering the contact elements using photonic soldering. The melting temperature of the solder is preferably higher than the maximum operating temperature (Tmax) of the first layer. The maximum operating temperature (Tmax) can be the highest temperature that can be applied to the material of the first layer over a long period of time without causing significant changes in its properties. Temperature increases above the maximum operating temperature can cause degradation, chemical changes, and excessive creep.

[0161] By heating the contact elements using particularly short photonic pulses of at least about 3 milliseconds to 3 seconds, the contact elements can be at least partially melted without significantly altering the material properties of the first layer and / or structured conductor layer located beneath the contact elements.

[0162] In some embodiments, the contact element can absorb the energy of the photonic pulse (whereas preferably the transparent material of the first layer does not absorb the energy of the photonic pulse), or it can absorb the energy of the photonic pulse to a relatively low degree.

[0163] Therefore, if the first layer is at least partially transparent and the contact element is at least not very transparent, the contact element can absorb more photonic pulse energy than the first layer. Thus, the contact element can be heated and / or melted without significantly altering the material properties of the first layer and / or structured conductive layer located beneath it.

[0164] In some embodiments, an optoelectronic device, particularly a partially transparent pane of, for example, a vehicle, comprises a first layer, particularly an intermediate layer disposed between a cover layer and a carrier layer; at least one optoelectronic component at least partially or completely embedded in the first layer; and at least one structured conductive layer disposed on the upper surface of the first layer and on the at least one optoelectronic component. The conductive layer has an electrical conductive path for supplying electricity to the at least one optoelectronic component.

[0165] In some embodiments, at least one optoelectronic component can be embedded in the first layer such that the upper surface of the optoelectronic component is located in a plane defined by the upper surface of the first layer. Thus, a conductive layer can be placed on a substantially flat surface formed by the upper surface of the first layer and the upper surface of at least one optoelectronic component.

[0166] In some embodiments, a first portion of the conductive layer is located on the upper surface of the first layer, and a second portion of the conductive layer is located on the upper surface of the optoelectronic component and is in contact with the electrical contacts of the optoelectronic component. The electrical contacts, in particular the contact pads, are located on the upper surface of the optoelectronic component. Specifically, the second portion of the conductive layer is mechanically and electrically interconnected with the electrical contacts of the optoelectronic component.

[0167] In some embodiments, the conductive layer has a sintered residue of a photostructureable nanoparticle paste, particularly a residue of a photostructureable nanoparticle paste containing conductive nanoparticles such as silver and / or gold and / or copper nanoparticles.

[0168] In some embodiments, an optoelectronic device, particularly a partially transparent pane of, for example, a vehicle, comprises a first layer, particularly an intermediate layer disposed between a cover layer and a carrier layer; at least one optoelectronic component disposed on the first layer; and at least one structured conductive layer disposed on the upper surface of the first layer and on the at least one optoelectronic component. The conductive layer has an electrical conductive path for supplying electricity to the at least one optoelectronic component, and the conductive layer also has a sintered residue of a photostructureable nanoparticle paste, particularly a residue of a photostructureable nanoparticle paste containing conductive nanoparticles such as silver and / or gold and / or copper nanoparticles.

[0169] In some embodiments, at least one optoelectronic component can be positioned on the upper surface of the first layer so as not to be embedded in the first layer.

[0170] In some embodiments, a first portion of the conductive layer can be positioned on the upper surface of the first layer, and a second portion of the conductive layer can be positioned on the upper surface of an optoelectronic component and in contact with the electrical contacts of the optoelectronic component. The electrical contacts, particularly contact pads, can be positioned on the upper surface of the optoelectronic component. In some embodiments, an intermediate portion of the conductive layer can be positioned on the side of the optoelectronic component and the first and second portions of the conductive layer can be interconnected. Thus, at least one optoelectronic component and the upper surface of the first layer can be covered by the conductive layer.

[0171] In some embodiments, an optoelectronic device, particularly a partially transparent pane of, for example, a vehicle, comprises a first layer, particularly an intermediate layer disposed between a cover layer and a carrier layer; a structured conductor layer disposed on the upper surface of the first layer; and at least one optoelectronic component disposed on the structured conductor layer. The structured conductor layer has an electrical conductor path for supplying electricity to the at least one optoelectronic component. Furthermore, an electrical contact element is disposed on the structured conductor layer, particularly between the structured conductor layer and the electrical contacts of the at least one optoelectronic component, to electrically connect the electrical contacts of the at least one optoelectronic component to the structured conductor layer. The contact element is particularly aligned with the electrical contacts of the at least one optoelectronic component and comprises or consists of a material having a melting or curing temperature higher than the maximum operating temperature of the first layer.

[0172] In some embodiments, a planarization layer is disposed on the first layer and / or the conductive layer. The planarization layer may contain or consist of a material similar to that of the first layer, such as PVB. Optionally, at least one optoelectronic component may be embedded in the planarization layer.

[0173] In some embodiments of the present invention, the optoelectronic device is at least partially flexible and has reinforcing material that stabilizes at least the connection area of ​​the optoelectronic device, enabling reliable electrical interconnection between the optoelectronic device and the environment.

[0174] In some embodiments of the present invention, a method for manufacturing an optoelectronic device, for example, a partially transparent pane for a vehicle, involves the following steps: A step of providing a carrier substrate, particularly a temporary carrier substrate, and a release layer, particularly a temporary release layer disposed on the carrier substrate. A step of providing a structured conductive layer on the peel layer on the side opposite to the carrier substrate, A step of arranging at least one optoelectronic component on the structured conductor layer, wherein the structured conductor layer has an electrical conductor path for supplying electricity to the at least one optoelectronic component; A step of providing a first layer on the release layer, wherein the first layer covers the conductor layer and the at least one optoelectronic component such that the at least one optoelectronic component is at least partially embedded in the first layer. A step of removing the carrier substrate and the release layer, Includes.

[0175] By providing carrier substrates, particularly rigid carrier substrates, which are used as a foundation for constructing optoelectronic devices on top of them, a cost-effective production process with relatively few process steps can be provided for many formats of optoelectronic devices. The release layer can function, for example, as a thermal release layer, a chemical release layer, or a laser release layer, enabling easy and non-destructive removal of the optoelectronic device from the carrier substrate.

[0176] In some embodiments, the carrier substrate may include or consist of a transparent and rigid material (e.g., glass).

[0177] In some embodiments, the carrier substrate may include or consist of a deformable material such as a mold compound or resin. This can be advantageous because it allows the optoelectronic device to be shaped into a desired form.

[0178] In some embodiments, the release layer may contain or consist of a soluble material, such as silicon nitride (SiN). Therefore, the release layer can be easily removed.

[0179] In some embodiments, the method further includes the step of providing a planarization layer on the first layer and / or structured conductor layer and / or at least one optoelectronic component after removing the carrier substrate and the release layer. Thus, the structured conductor layer and / or at least one optoelectronic component are positioned between the first layer and the planarization layer. Furthermore, the structured conductor layer may be positioned within a neutral fiber of the laminate of the first layer, the structured conductor layer, and the planarization layer.

[0180] In some embodiments, the first layer comprises or consists of an elastic material, such as polyvinyl butyral (PVB). Optionally, the first layer may be a foil of the elastic material. The elastic first layer can conform to non-planar contours or shapes. The first layer may comprise or consist of other plastics other than PVB, particularly preferably other resins having strong bonding properties, optical transparency, adhesion to many surfaces, toughness, and flexibility, such as ethylene vinyl acetate (EVA), silicone, or thermoplastic polyurethane (TPU).

[0181] In some embodiments, at least one optoelectronic component can be embedded in the first layer such that the upper surface of the optoelectronic component is located in a plane defined by the upper surface of the first layer.

[0182] In some embodiments, the first layer may be an intermediate layer, particularly a permanent carrier layer, positioned between the cover layer and the carrier layer. The carrier layer and the cover layer are preferably permanent layers in the final optoelectronic device. At least one of the cover layer and the carrier layer may be at least partially transparent and may include or consist of glass or other at least partially transparent materials, such as methacrylate (PMMA), silicon, and / or polycarbonate (PC).

[0183] Using PVB or EVA foil as the first layer, a smooth lamination between the cover layer and the carrier layer (particularly two glass layers) can be obtained. In some embodiments, this lamination can be carried out using temperature and pressure.

[0184] In some embodiments, at least one optoelectronic component may be an LED, which is either a volume emitter or a surface emitter. At least one optoelectronic component can be controlled individually. Thus, in at least some embodiments, a desired light distribution can be obtained from the optoelectronic device. Individual control of at least one optoelectronic component can be achieved, for example, by individually controlling the current supplied to each optoelectronic component.

[0185] In some embodiments, at least one optoelectronic component, particularly an LED, can be less than 300 μm, and especially less than 150 μm. Due to such spatial extent, at least one optoelectronic component is invisible to the human eye at reading distance.

[0186] In some embodiments, micro-LEDs (also called μLEDs) or μLED chips can be used as optoelectronic components. μLEDs are small LEDs, for example, with edge lengths of less than 70 μm, particularly less than 20 μm, and especially in the range of 1 μm to 10 μm. Other ranges are 10 to 60 μm. This results in a surface area of ​​several hundred μm. 2 From tens of micrometers 2 This can be the case. For example, a μLED has an edge length of approximately 50 μm and approximately 2500 μm 2 It can have a surface area of ​​30 μm. In some cases, the μLED has an edge length of 5 μm or less, and as a result, the surface area is 30 μm. 2 The height will be less than this. The typical height of such a μLED is, for example, in the range of 1.5 μm to 10 μm.

[0187] Microlight-emitting diode (μLED) chips (also called μLED chips) can be used as optoelectronic components. Microlight-emitting diodes can form pixels or subpixels and emit light of a selected color.

[0188] In some embodiments, the conductive layer includes or consists of a conductive material layer, such as copper, gold, or silver.

[0189] In some embodiments, the step of providing a structured conductive layer on the release layer on the side opposite to the carrier substrate includes the step of growing a conductive material layer (e.g., copper) on the release layer.

[0190] In some embodiments, the conductive layer can be provided on the release layer, particularly across the entire surface of the release layer. The conductive layer can then be structured such that the resulting structured conductive layer includes conductive paths. At least one optoelectronic component can then be placed on the structured conductive layer such that the electrical conductive paths are connected to the electrical contacts of at least one optoelectronic component.

[0191] In some embodiments, the planarization layer may include or consist of an elastic material, such as polyvinyl butyral (PVB). Optionally, the planarization layer may be a foil of an elastic material. The foil may be elastic and conform to non-planar contours or shapes. Alternatively, the planarization layer may include or consist of other plastics, in particular preferably other resins having strong bonding, optical transparency, adhesion to many surfaces, toughness, and flexibility, such as ethylene-vinyl acetate (EVA). In some embodiments, a structured conductive layer may be embedded in the planarization layer.

[0192] In some embodiments, the method further includes the step of providing at least one reinforcing material on the release layer and / or structured conductive layer. The step of providing at least one reinforcing material on the release layer and / or structured conductive layer is preferably performed before the step of providing the first layer and the step of removing the release layer and temporary carrier substrate. The reinforcing material can preferably function as a stabilizer in at least the connection area of ​​the optoelectronic device to enable reliable electrical interconnection between the optoelectronic device and the environment.

[0193] In some embodiments, the optoelectronic device may be made of a flexible material, and rigid reinforcements may be placed in the edge regions of the optoelectronic device to stabilize at least the edge regions of the optoelectronic device. The edge regions and, in particular, the reinforcements, can be used as connection regions of the optoelectronic device to enable reliable electrical interconnection between the optoelectronic device and the environment and / or at least one adjacent second optoelectronic device, for example.

[0194] In some embodiments, the reinforcing material may have a rigid housing and an electrical conductor path within the housing to electrically connect the optoelectronic device and, in particular, the optoelectronic component to the environment and / or at least one adjacent second optoelectronic device.

[0195] In some embodiments, at least one reinforcing material is provided in the edge region of the delamination layer, which includes the edge of the delamination layer.

[0196] In some embodiments, at least one reinforcing material can at least partially cover the structured conductor layer. The structured conductor layer can extend to the edge region of the delamination layer. Therefore, the reinforcing material can also cover a portion of the structured conductor layer located in the edge region of the delamination layer.

[0197] In some embodiments, the outer edge of at least one reinforcing member can be aligned with the edge of the delamination layer. Thus, the side surface of at least one reinforcing member and the side surface of the delamination layer can be placed in the same plane.

[0198] In some embodiments, the step of providing the first layer on the release layer may include embedding at least one reinforcing material at least partially into the first layer. Optionally, the first layer should not completely cover the edge region of the release layer. Thus, at least one reinforcing material protrudes from the first layer. Thus, in some embodiments, the first layer is distal to the edge of the release layer.

[0199] In some embodiments, the reinforcing material includes or consists of a rigid material, such as a rigid plastic material. Optionally, the reinforcing material is more rigid than the first layer and therefore reinforces the first layer at least in its edge region.

[0200] In some embodiments, the method further includes a step of modifying the shape of the intermediate product before providing the first layer on the release layer. The intermediate product may include a carrier substrate and a release layer, a structured conductor layer on the release layer, at least one optoelectronic component on the structured conductor layer, and optionally at least one reinforcing material on the release layer. The intermediate product can preferably be obtained by the steps of providing a carrier substrate and a release layer disposed on the carrier substrate, providing a structured conductor layer on the release layer, disposing at least one optoelectronic component on the structured conductor layer, and optionally providing at least one reinforcing material on the release layer and / or the structured conductor layer. The modified shape of the intermediate product may have, for example, at least one curved surface.

[0201] In some embodiments, after a step of modifying the shape of the intermediate product, the first layer is provided on the conductive layer and at least one optoelectronic component. The step of modifying the shape of the intermediate product can be performed, for example, by using a mold and pressing the intermediate product into the mold. Subsequently, the first layer and at least one optoelectronic component can be provided on the conductive layer by, for example, molding the first layer onto the conductive layer and at least one optoelectronic component. Thus, the first layer may contain or consist of a mechanically robust material such as a mold compound, silicon, or a transparent or diffusion-filled resin.

[0202] In some embodiments, the optoelectronic device can be positioned on a curved surface and fixed to that curved surface, in particular by bonding, in a further step. In a preferred embodiment, the curved surface of the intermediate product and / or the curved surface of the optoelectronic device can coincide with the curved surface on which the optoelectronic device is positioned.

[0203] In some embodiments, an optoelectronic device, particularly a partially transparent pane of, for example, a vehicle, comprises a first layer, at least one optoelectronic component at least partially or completely embedded in the first layer, and at least one structured conductive layer disposed on the upper surface of the first layer and on the at least one optoelectronic component. The structured conductive layer has an electrical conductive path for supplying electricity to the at least one optoelectronic component.

[0204] In some embodiments, the optoelectronic device may further have a planar layer on the top surface of the first layer and / or on the structured conductor layer and / or at least one optoelectronic component. In some embodiments, the structured conductor layer may be embedded in the planar layer. In some embodiments, the structured conductor layer and / or at least one optoelectronic component may be positioned between the first layer and the planar layer such that the structured conductor layer is positioned, for example, within the neutral plane of a laminate comprising the first layer, the structured conductor layer, and the planar layer. The neutral plane is a conceptual plane within the laminate. When subjected to a bending load, the laminate bends, for example, such that the inner surface is compressed and the outer surface is tensile, or vice versa. The neutral plane is a plane within the laminate where the material of the laminate is not subjected to either compressive or tensile stress.

[0205] In some embodiments, at least one optoelectronic component can be completely embedded in the first layer, in particular, such that the top surface of the optoelectronic component is located within the plane defined by the top surface of the first layer. Thus, the first layer and at least one optoelectronic component can provide a substantially flat top surface. In other words, at least one optoelectronic component can be completely embedded in the first layer such that the top surface of the optoelectronic component is located within the plane defined by the top surface of the first layer, but is not covered by the first layer.

[0206] In some embodiments, the optoelectronic device further has at least one reinforcing material on the upper surface of the first layer and / or on the structured conductive layer. In some embodiments, the reinforcing material can be at least partially embedded in the first layer.

[0207] Therefore, in some embodiments, the reinforcing material protrudes from the first layer, and in particular from the side of the first layer.

[0208] In some embodiments, the upper surface of the first layer is curved.

[0209] In some embodiments, optoelectronic devices, particularly a partially transparent pane of, for example, a vehicle, have a layer stack, particularly an intermediate layer stack positioned between a cover layer and a carrier layer, having at least an uppermost layer, wherein the uppermost layer has at least one opening, particularly an opening on the upper surface of the uppermost layer. The optoelectronic device further has at least one electronic or optoelectronic component positioned within the opening, and the optoelectronic device further has at least one electrical conductor arrangement, particularly a structured conductor layer, for supplying electricity to the at least one electronic or optoelectronic component.

[0210] By placing at least one electronic or optoelectronic component within the aperture, the topography of the optoelectronic device can be reduced, and subsequent processing of the optoelectronic device can be simplified, because balancing an optoelectronic component placed on the surface of the top layer of a layer stack (but not within the aperture) can be technically difficult. Furthermore, by placing at least one electronic or optoelectronic component within the aperture, the topography of the optoelectronic device can be reduced. Therefore, the placement of at least one electrical conductor, particularly a structured conductor layer, can be improved. A further advantage is that at least one electronic or optoelectronic component can have better mechanical stability when placed within the aperture. In particular, the sides of the aperture can be used to fix electronic or optoelectronic components, such as photoelectron light sources (e.g., LEDs, photoelectron detectors, or IC chips).

[0211] In some embodiments, a first portion of the electrical conductor arrangement is located on the upper surface of the top layer, and a second portion of the electrical conductor arrangement is located on the upper surface of an electronic or optoelectronic component and is in contact with the electrical contacts of the electronic or optoelectronic component. Electrical contacts, in particular contact pads, can be located on the upper surface of an electronic or optoelectronic component.

[0212] In some embodiments, the boundary region lies between the top surface of an electronic or optoelectronic component and the adjacent top surface of the uppermost layer of the layer stack. The intermediate portion of the electrical conductor arrangement extends beyond the boundary region and can interconnect the first portion of the electrical conductor arrangement with the second portion of the electrical conductor arrangement.

[0213] Preferably, at least one electronic or optoelectronic component is located within an opening in the uppermost layer of the layer stack, in particular an intermediate layer stack positioned between the cover layer and the carrier layer. The electrical conductor arrangement, particularly the conductor layer, is located on the upper surface of the uppermost layer of the layer stack and on the upper surface of the electronic or optoelectronic component, and is in contact with the electrical contacts of the electronic or optoelectronic component. Furthermore, the electrical conductor arrangement can extend beyond boundary regions, in particular beyond the gap between the shell surface of the electronic or optoelectronic component and the uppermost layer. Thus, the electrical conductor arrangement can fill this gap. The boundary region, particularly the gap, is preferably small because the distance filled by the electrical conductor arrangement may be limited by the process of arranging the electrical conductor arrangement on the upper surface of the uppermost layer, on the upper surface of the electronic or optoelectronic component, and on the electrical contacts of the electronic or optoelectronic component.

[0214] The formulation that something is placed on top of something should not necessarily be understood as something being placed directly on top of something else, and may include other elements placed between them. Thus, the formulation that something is placed on top of something else can also be understood as something being placed indirectly on or above something else. In particular, the formulation that an electrical conductor arrangement is placed on the top surface of the top layer can be understood as the electrical conductor arrangement being placed directly on the top surface of the top layer, or as the electrical conductor arrangement being placed above the top surface of the top layer, but other elements may be placed between the electrical conductor arrangement and the top surface of the top layer.

[0215] In some embodiments, the opening is a cavity or a through-hole.

[0216] When the opening is a cavity, the layer stack preferably has only a single layer, particularly the top layer. In some embodiments, the cavity has a bottom surface formed by the top layer, and at least one electronic or optoelectronic component is placed on that bottom surface.

[0217] If the opening is a through-hole in the uppermost layer, the layer stack preferably has only two layers, particularly an uppermost and a lowermost layer. In some embodiments, the layer stack has a lowermost layer located below the uppermost layer, which carries at least one electronic or optoelectronic component, preferably located within a through-hole in the uppermost layer.

[0218] In some embodiments, the top layer is at least partially transparent.

[0219] In some embodiments, the bottom layer is at least partially transparent.

[0220] In some embodiments, the layer stack, particularly the intermediate layer stack, is preferably at least partially transparent and is preferably positioned between the cover layer and the carrier layer, with at least one of the cover layer and the carrier layer being at least partially transparent. Preferably, each layer of the optoelectronic device is made of or contains at least a partially transparent material. Thus, the optoelectronic device can be at least partially transparent.

[0221] In some embodiments, the optoelectronic device may have, or be incorporated into, at least partially transparent panes, particularly vehicle panes. For example, the optoelectronic device may be placed between two glass plates, which together may form a vehicle window device. The two glass plates may also be components of the optoelectronic device, so that the optoelectronic device may have glass plates, in at least some embodiments.

[0222] In some embodiments, at least one electronic or optoelectronic component is positioned entirely within the opening, in particular, such that the top surface of the electronic or optoelectronic component is positioned within a reference plane extending over the top surface of the uppermost layer. In other words, the top surface of the electronic or optoelectronic component and the top surface of the uppermost layer are coplanar and form a flat top surface.

[0223] In some embodiments, at least one electronic or optoelectronic component is partially positioned within the opening such that the upper surface of the electronic or optoelectronic component protrudes from the upper surface of the top layer by a height H, preferably half or less of the thickness of the electronic or optoelectronic component. Thus, the electronic or optoelectronic component can be partially positioned within the opening such that half or less of its thickness protrudes from the upper surface of the top layer.

[0224] In some embodiments, an electronic or optoelectronic component may have or consist of at least one of the following: light-emitting diodes (LEDs), particularly flip-chip LEDs, integrated circuits (ICs), photodiodes, sensors, particularly infrared sensors. All electrical contacts of a flip-chip LED can be located on the same surface, particularly on the top surface of the chip. A suitable flip-chip LED may be a small LED with an edge length of less than 150 μm, particularly less than 100 μm. A typical height of a suitable LED is, for example, in the range of 120 μm to 5 μm.

[0225] In some embodiments, the electronic or optoelectronic component may have or consist of a μLED. A μLED is a small LED, for example, with an edge length of less than 70 μm, particularly less than 20 μm, especially in the range of 1 μm to 10 μm. Other ranges are 10 to 30 μm. This results in a surface area of ​​several hundred μm. 2 From tens of micrometers 2 This can be the case. For example, a μLED has an edge length of approximately 8 μm and approximately 60 μm. 2It can have a surface area of ​​30 μm. In some cases, the μLED has an edge length of 5 μm or less, and as a result, the surface area is 30 μm. 2 The height will be less than this. The typical height of such a μLED is, for example, in the range of 1.5 μm to 10 μm.

[0226] Advantageously, microlight-emitting diode chips (also called μLED chips) are used as electronic or optoelectronic components. Microlight-emitting diodes can form pixels or subpixels and emit light of a selected color.

[0227] In some embodiments, the boundary region lies between the top surface of the electronic or optoelectronic component and the adjacent top surface of the uppermost layer of the layer stack. The boundary region may have a gap between the shell surface of the electronic or optoelectronic component and the side surface of the opening. The side surface of the opening faces the shell surface, and the gap preferably extends circumferentially around the electronic or optoelectronic component, surrounding the shell surface. The shell surface is preferably formed by the outer surface of the electronic or optoelectronic component, excluding the top surface of the electronic or optoelectronic component and the bottom surface of the electronic or optoelectronic component facing the top surface.

[0228] In some embodiments, the gap can be formed by the distance between an electronic or optoelectronic component located in the uppermost opening and the side of the opening.

[0229] In some embodiments, the gap has a width of less than 10-15 μm. In particular, the gap has a width of less than 10-15 μm in a plane extending over the upper surface of the top layer. Thus, the intermediate portion of the electrical conductor arrangement extending beyond the boundary region can extend over a distance of 10-15 μm or less. This can be advantageous because the process of arranging the electrical conductor arrangement can be limited to the maximum distance that can be filled by the intermediate portion of the electrical conductor arrangement, such that a first portion of the electrical conductor arrangement is placed on the upper surface of the top layer, a second portion of the electrical conductor arrangement is placed on the upper surface of an electronic or optoelectronic component, and the intermediate portion of the electrical conductor arrangement extends beyond the boundary region, particularly the gap, and interconnects the first and second portions of the electrical conductor arrangement.

[0230] In some embodiments, the gap is filled with a filler, particularly an adhesive. Optionally, the filler is placed on the filled gap, particularly on a plane extending over the upper surface of the top layer. This can be advantageous because, when an electronic or optoelectronic component protrudes from the top surface, the process of arranging the electrical conductors can be improved such that a first portion of the electrical conductor arrangement is placed on the upper surface of the top layer, a second portion of the electrical conductor arrangement is placed on the top surface of the electronic or optoelectronic component, and an intermediate portion of the electrical conductor arrangement extends beyond the boundary region, particularly the gap, and interconnects the first and second portions of the electrical conductor arrangement.

[0231] In some embodiments, the filler is positioned between the layers of the layer stack and the bottom surface of the electronic or optoelectronic component, where the bottom surface is opposite to the top surface of the electronic or optoelectronic component. The filler may, in particular, include or consist of an adhesive that secures the electronic or optoelectronic component to the opening.

[0232] In some embodiments, the filler material can form a fillet weld between the upper surface of the top layer and the shell surface of the electronic or optoelectronic component. In particular, the filler material in the form of a fillet weld can be partially placed within the gap to partially form a fillet weld between the upper surface of the top layer and the shell surface of the electronic or optoelectronic component.

[0233] In some embodiments, a dielectric layer, particularly a dielectric intermediate layer, is located between the electrical conductor arrangement and the top layer, and / or between the electrical conductor arrangement and the top surface of an electronic or optoelectronic component. Such a dielectric layer helps prevent short circuits between the electrical conductor arrangement and at least one of the top layer and the top surface of the electronic or optoelectronic component.

[0234] In some embodiments, the top layer comprises at least one of the following materials: polyethylene terephthalate (PET), biaxially oriented PET (boPET), polyethylene naphthalate (PEN), polyvinyl butyral (PVB), ethylene vinyl acetate (EVA), photoresist, and a material that can be cured by the use of ultraviolet light. In some embodiments, boPET is the optimal material.

[0235] In some embodiments, the bottom layer comprises at least one of the following materials: polyethylene terephthalate (PET), biaxially oriented PET (boPET), polyethylene naphthalate (PEN), polyvinyl butyral (PVB), and ethylene vinyl acetate (EVA). In some embodiments, boPET is the optimal material.

[0236] In some embodiments, the material of at least one electrical conductor arrangement may include indium tin oxide and / or silver. In some embodiments, the electrical conductor arrangement includes or consists of a metal, in particular, one of copper, silver, and gold.

[0237] In some embodiments, a method for manufacturing an optoelectronic device, particularly a transparent pane for, for example, a vehicle, involves the following steps: A layer stack having at least one uppermost layer having at least one opening, and in particular a layer stack having at least one uppermost layer having an opening on the upper surface of the uppermost layer, The steps include placing at least one electronic or optoelectronic component within the opening, The steps include providing at least one electrical conductor arrangement, particularly a structured conductor layer, on the upper surface of the uppermost layer, in order to supply electricity to the at least one electronic or optoelectronic component, Includes.

[0238] In some embodiments, the opening is a cavity having a bottom formed by an uppermost layer, and at least one electronic or optoelectronic component is disposed within the cavity so as to be located on the bottom.

[0239] In some embodiments, the opening is a through-hole in the uppermost layer. The layer stack further has a bottom layer below the uppermost layer, and at least one electronic or optoelectronic component is located within the through-hole so as to be on the bottom layer.

[0240] In some embodiments, the step of placing at least one electronic or optoelectronic component within an opening includes the step of fixing at least one electronic or optoelectronic component within the opening using a filler, particularly an adhesive. The filler is preferably placed within the opening by, for example, a step of dispensing, spraying, or stamping the filler. The at least one electronic or optoelectronic component can be placed on the filler within the opening, and the filler, particularly the adhesive, can be cured in a further step.

[0241] In some embodiments, the step of placing at least one electronic or optoelectronic component within the opening includes the step of temporarily heating the layer stack, particularly near the opening, to fix the at least one electronic or optoelectronic component to the layer stack.

[0242] In some embodiments, the bottom layer of the layer stack contains or consists of a material such as PVB or EVA, which is temporarily heated, and at least one electronic or optoelectronic component is placed, in particular, simultaneously, within an opening, particularly on the bottom layer of the layer stack. A boundary region, particularly a gap, is located between the top surface of the electronic or optoelectronic component and the adjacent top surface of the top layer of the layer stack, which can preferably be filled by pushing the electronic or optoelectronic component into the temporarily heated bottom layer, because the material of the bottom layer can flow into the boundary region.

[0243] In some embodiments, the step of providing a layer stack includes providing a first layer stack having an unstructured top layer, and structuring the top layer to obtain at least one opening in the top layer.

[0244] The process of structuring the top layer and obtaining at least one opening in the top layer can be carried out, for example, by ablation of the top layer to form the opening with the help of laser light.

[0245] In some embodiments, the step of structuring the top layer to obtain at least one opening in the top layer can be carried out by drilling or mechanically creating a through hole in the top layer.

[0246] In some embodiments, the step of structuring the top layer to obtain at least one opening in the top layer can be performed by lithographic structuring of the top layer. The photostructureable resist can be provided on the top layer of a layer stack to provide a photomask on the top layer and etch at least one opening within the top layer, or the photostructureable resist can be provided as the top layer of a layer stack and structured so that the opening is located within the photostructureable resist. In the latter case, the photostructureable resist may remain in the final product, while in the former case, the photostructureable resist may be removed.

[0247] In some embodiments, the optoelectronic device has a layer stack providing a plurality of pixels. Each pixel of the plurality has at least one photoelectron light source embedded, in particular fully embedded, in a first layer of the layer stack. The photoelectron light source has a first reflective layer on its upper surface and optionally a second reflective layer on its lower surface. The upper surface of the photoelectron light source faces toward the upper surface of the layer stack, and the lower surface of the photoelectron light source faces toward away from the upper surface of the layer stack. Each pixel of the plurality further has a first pixel region on the upper surface of the layer stack and a structured light scattering arrangement that scatters light from the photoelectron light source to uniformly illuminate this first pixel region.

[0248] In a further embodiment, the optoelectronic device has a layer stack providing a plurality of pixels. Each pixel of the plurality has at least one photoelectron light source embedded, in particular fully embedded, in a first layer of the layer stack. The photoelectron light source has a first reflective layer on its upper surface and a second reflective layer on its lower surface. The upper surface of the photoelectron light source faces toward the upper surface of the layer stack, and the lower surface of the photoelectron light source faces toward away from the upper surface. Each pixel of the plurality further has a first pixel region on the upper surface of the layer stack and a light scattering arrangement that scatters light from the photoelectron light source to uniformly illuminate this first pixel region. The light scattering arrangement forms a first portion of the first layer surrounding the photoelectron light source in the circumferential direction.

[0249] In some embodiments, the optoelectronic device has a layer stack having a plurality of pixels. Each pixel of the plurality has at least one photoelectron light source embedded, in particular fully embedded, in a first layer of the layer stack. The photoelectron light source has a first reflective layer on its upper surface and optionally a second reflective layer on its lower surface. The upper surface of the photoelectron light source faces toward the upper surface of the layer stack, and the lower surface of the photoelectron light source faces toward away from the upper surface of the layer stack. Each pixel of the plurality further has a first pixel region on the upper surface of the layer stack and a light guide layer disposed on the first layer. The first layer is disposed between the first pixel region and the light guide layer, and the refractive index of the light guide layer is higher than the refractive index of the other layers of the layer stack.

[0250] In some embodiments, the optoelectronic device has a layer stack providing a plurality of pixels. Each pixel of the plurality has at least one photoelectron light source embedded, particularly fully embedded, in a first layer of the layer stack. Each pixel of the plurality further has a first pixel region on the upper surface of the layer stack and a light guide layer disposed on the first layer. The refractive index of the light guide layer is higher than that of the other layers of the layer stack. Each pixel of the plurality further has a third reflective layer that reflects light from the photoelectron light source to uniformly illuminate the first pixel region. The third reflective layer forms an aperture in the first layer where the photoelectron light source is located. The first layer has a curved surface, particularly the surface of the aperture, facing the photoelectron light source. The curved surface can function as a reflector so that light emitted substantially radially from the photoelectron light source is reflected toward the first pixel region, particularly so that the first pixel region is uniformly illuminated. The curved surface can also be formed so that the output beam passing through the first pixel region has a desired shape. Therefore, the curved surface can be used for beam forming purposes.

[0251] A structured light scattering arrangement or light scattering arrangement can be configured to scatter light emitted from a photoelectron light source such that a first pixel region is uniformly illuminated by scattered light. In particular, a structured light scattering arrangement or light scattering arrangement can be configured to scatter light emitted from a photoelectron light source such that a first pixel region is uniformly illuminated by scattered light and defined and / or sharp edges are generated for the first pixel region.

[0252] The first pixel region may have a central axis perpendicular to the first pixel region and passing through the center of the first pixel region. The central axis extends in a direction orthogonal to the first layer of the layer stack.

[0253] Each pixel in a plurality of pixels may further have a second pixel region. The second pixel region may be formed, for example, on the bottom surface of a layer stack. In some embodiments, the outer contour of the second pixel region may coincide with the outer contour of the first pixel region in a view perpendicular to the first pixel region. Thus, for example, when each pixel in a plurality of pixels is illuminated by light, it can be achieved that each pixel can be viewed from both sides of the optoelectronic device.

[0254] The first pixel region and / or the second pixel region may have a circular, square, rectangular, or polygonal shape in a view perpendicular to the first pixel region. Thus, the first pixel region and / or the second pixel region may have a circular, square, rectangular, or polygonal outer contour.

[0255] The photoelectron light source can be positioned behind the first pixel region in a view perpendicular to the first pixel region and can be centered with respect to the central axis of the first pixel region. Therefore, the central axis of the light source can be collinear with the central axis of the first pixel region.

[0256] At least one photoelectron light source may have an LED (light-emitting diode) or a microLED (also called a μLED), or an LED chip or a μLED chip. However, at least one photoelectron light source may also have three LEDs or μLEDs that emit light of a selected color (in particular, red, green, or blue). Thus, each of the multiple pixels can form an RGB pixel.

[0257] At least one photoelectron light source may have, for example, a volume-emitting LED or a μLED. Thus, at least one photoelectron light source can emit light of a selected color in all directions. For example, with the help of a first reflective layer on the top surface of the photoelectron light source and optionally a second reflective layer on the bottom surface of the photoelectron light source, the light emitted from the photoelectron light source can be guided in a suitable manner. In some embodiments, it may be advantageous for the photoelectron light source to emit light radially from its sides. However, it may also be advantageous for the photoelectron light source to emit light radially from its sides, as well as vertically from its top and / or bottom surfaces.

[0258] The first layer may be the only layer in the layer stack, or the layer stack may have additional layers, such as a second and a third layer, as well as any number of further layers. The first layer may be placed between the second and third layers.

[0259] The first layer may preferably be at least partially transparent. Preferably, each layer of the layer stack is made of or contains at least a partially transparent material. Thus, the optoelectronic device may also be at least partially transparent.

[0260] In some embodiments, the optoelectronic device is at least partially transparent pane, particularly a vehicle pane, and is preferably positioned between a cover layer and a carrier layer. At least one of the cover layer and the carrier layer can be at least partially transparent. The cover layer and the carrier layer can be, for example, glass layers used in vehicle windows.

[0261] The structured light scattering arrangement can be placed within the layer stack, preferably above the first layer, between the first pixel region and the photoelectron light source.

[0262] Further structured light scattering arrangements can be placed within the layer stack, preferably below the first layer, between the second pixel region and the photoelectron light source.

[0263] In some embodiments, a structured light scattering arrangement positioned above the first layer, between the first pixel region and the photoelectron light source, can be configured to scatter light from the photoelectron light source so that the first pixel region is uniformly illuminated by scattered light. Additionally or alternatively, a structured light scattering arrangement positioned below the first layer, between the second pixel region and the photoelectron light source, can be configured to scatter light from the photoelectron light source so that the second pixel region is uniformly illuminated by scattered light.

[0264] The structured light scattering arrangement can be embedded in the first layer, in particular, completely embedded. The structured light scattering arrangement embedded in the first layer can be configured to scatter light from a photoelectron light source such that a first pixel region and / or a second pixel region are uniformly illuminated by scattered light.

[0265] A structured light scattering arrangement may have at least a first light scattering element and at least a second light scattering element. The second light scattering element may be located further from at least one photoelectron light source than the first light scattering element in the radial direction. Thus, "in a radial direction" can be understood as the direction perpendicular to the central axis of the first pixel region.

[0266] Furthermore, a structured light scattering configuration can also have multiple light scattering elements. These multiple light scattering elements can be more than two, more than five, more than ten, or more than fifty.

[0267] At least the first light scattering element and the second light scattering element can each have a defined geometric shape. The shape is preferably the same for at least the first light scattering element and the second light scattering element. Preferably, at least the first light scattering element and the second light scattering element each have a defined particle concentration of scattering particles within their defined geometric shape.

[0268] At least the first light scattering element and the second light scattering element can each form a ring-shaped structure around at least one optoelectronic light source. Preferably, the ring-shaped structure has a circular, square, rectangular, or polygonal shape when viewed from above and / or, preferably, the ring-shaped structure has a circular, square, rectangular, or polygonal shape in a cross-sectional plane containing the central axis of the first pixel region.

[0269] In some embodiments, the cross-sectional area of the first light scattering element can be smaller than the cross-sectional area of the second light scattering element. The cross-sectional area is within a cross-sectional plane containing the central axis of the first pixel region.

[0270] When the structured light scattering arrangement has a plurality of light scattering elements, the cross-sectional area of the light scattering elements can depend on the radial distance between each light scattering element and the optoelectronic light source. In particular, the cross-sectional area increases with an increase in the distance. Thus, a light scattering element closer to the optoelectronic light source can have a smaller cross-sectional area than a light scattering element radially farther away from the optoelectronic light source. The cross-sectional area is within the same cross-sectional plane containing the central axis of the first pixel region.

[0271] In some embodiments, the particle concentration of the scattering particles in the first light scattering element is lower than the particle concentration of the scattering particles in the second light scattering element. <\

[0272] When the structured light scattering arrangement has a plurality of light scattering elements, the particle concentration of the scattering particles in the light scattering elements can increase with the radial distance between each light scattering element and the optoelectronic light source. Therefore, the closer the light scattering element is to the optoelectronic light source, the lower the particle concentration of the scattering particles can be compared to the light scattering elements that are radially farther away from the optoelectronic light source.

[0273] The optoelectronic light source, the first reflective layer, and optionally the second reflective layer can form an optoelectronic subassembly. The optoelectronic subassembly can be embedded in the first layer such that the upper surface of the optoelectronic subassembly is disposed in the same plane as the upper surface of the first layer and / or such that the bottom surface of the optoelectronic subassembly is disposed in the same plane as the bottom surface of the first layer. Therefore, the optoelectronic subassembly can have, for example, substantially the same height as the first layer.

[0274] The structured light scattering arrangement can particularly have an electrowetting device disposed between the first layer and the first pixel region, within the layer of the layer stack.

[0275] The electrowetting device can have a first electrode, particularly at least partially transparent electrode, and a second electrode, particularly at least partially transparent electrode. A plurality of oil-coated droplets constituting the light scattering particles can be disposed between the first electrode and the second electrode. The plurality of oil-coated droplets can be embedded in the first medium. The first medium can particularly include or consist of air or any fluid.

[0276] When a voltage is applied to the two electrodes, the electrowetting device forms a film of light scattering particles to scatter the light from the optoelectronic light source such that the first pixel region is uniformly illuminated by the scattered light.

[0277] The electrowetting device can be configured, for example, to form a transparent layer when no voltage is applied to the two electrodes, and to form a semi-transparent layer when a voltage is applied to the two electrodes.

[0278] A structured light scattering arrangement may have a first cavity extending between the first layer and the first pixel region over the entire length and width of the first pixel region. Thus, the first cavity may be located below the first pixel region and extend over the entire length and width of the first pixel region. The first cavity may be formed by spacers that separate the first layer from one or more further layers of the layer stack.

[0279] In some embodiments, the optoelectronic device has a first fluid pump for selectively delivering a first fluid to or emptying a first cavity. The first fluid may contain light-scattering particles. Thus, when the first cavity is filled with the first fluid, light from a photoelectron light source can be scattered by the first fluid so that a first pixel region is uniformly illuminated by scattered light.

[0280] A structured light scattering arrangement can have a series of interconnected fluid channels. These interconnected fluid channels can extend along the length and width directions of a first pixel region within a layer stack, below the first pixel region of multiple pixels. Viewed from above, the fluid channels can be positioned behind boundary regions of a grid-like structure that separates adjacent first pixel regions from each other.

[0281] The optoelectronic device may further include a second fluid pump for selectively supplying a second fluid to or emptying the fluid channel. The second fluid contains light-absorbing particles, particularly black particles. Thus, when the fluid channel is filled with the second fluid, light emitted from the photoelectron light source is absorbed by the second fluid, resulting in defined and / or sharp edges of the first pixel region.

[0282] The outer surface of the light scattering arrangement forming the first portion of the first layer surrounding the photoelectron light source in the circumferential direction can be aligned to the outer edge of the first pixel region when viewed in a view perpendicular to the first pixel region.

[0283] The second portion of the first layer can circumferentially surround the first portion of the first layer, and the refractive index of the first portion can be different from (in particular, greater than) that of the second portion. Thus, light from the photoelectron light source is reflected as it passes through the first portion of the first layer and incident on the second portion of the first layer by total internal reflection. Therefore, the light scattering arrangement forming the first portion of the first layer can be configured to reflect light at the boundary between the first and second portions of the first layer, scattering light so that the first pixel region is uniformly illuminated by scattered light.

[0284] The layer stack may have a light guide layer positioned on top of a first layer. The first layer may be positioned between the first pixel region and the light guide layer. The refractive index of the light guide layer may be higher than that of the other layers in the layer stack. Light emitted into the first layer from a photoelectron light source is coupled to the light guide layer, thereby allowing it to be distributed radially with respect to the central axis. The light scattering arrangement of the first portion of the first layer may have light scattering particles very close to the interface between the light guide layer and the first layer. Such light scattering particles can also scatter light propagating within the light guide layer. Thus, light can be recoupled from the light guide layer, particularly toward the first pixel region. This allows for uniform illumination of the first pixel region.

[0285] The layer stack may further have a scattering layer positioned on the opposite side of the light guide layer from the first layer. This scattering layer may contain light scattering particles to uniformly illuminate the first pixel region. The light scattering arrangement of the first portion of the first layer may have a scattering layer such that the light scattering particles form a monolayer having a height greater than the height of the first layer and / or the photoelectron light source.

[0286] The layer stack may further have a scattering layer positioned above the first layer, on the opposite side from the light guide layer. This scattering layer may contain light-scattering particles to uniformly illuminate the first pixel region. Light from the photoelectron light source is reflected or totally reflected from the interface below the scattering layer, but can be scattered by the light-scattering particles within the scattering layer. Thus, uniform illumination of the first pixel region above the scattering layer can be obtained.

[0287] The layer stack may further have a scattering layer positioned on the light guide layer opposite to the first layer. This scattering layer may contain light-scattering particles to uniformly illuminate a second pixel region opposite to the first pixel region, and this scattering layer may be very thin, in particular, having a thickness of at least approximately the same as the diameter of one light-scattering particle.

[0288] Light from a photoelectron light source can be coupled to a light guide layer placed on the first layer and separated from the light guide layer by a scattering layer placed on the light guide layer. Therefore, the scattering layer can be configured to scatter light from the photoelectron light source so that a second pixel region opposite to the first pixel region is uniformly illuminated.

[0289] A layer stack may include further layers, such as one or more protective layers. Alternatively, the optoelectronic device may be placed between two at least partially transparent layers, for example, stacked between the two layers. These layers may be glass plates. Furthermore, one side of the optoelectronic device may be laminated on a layer that can be at least partially transparent or opaque.

[0290] In some embodiments, the optoelectronic device has a plurality of optoelectronic light sources disposed on a first layer. The first layer is, for example, an intermediate layer disposed between a cover layer and a carrier layer. The first layer comprises or consists of at least partially transparent material, and each optoelectronic light source of the plurality of optoelectronic light sources has an individual light converter that converts the light emitted from the corresponding light source to emit converted light, or at least partially converted light such as, for example, white light. The light converter of each optoelectronic light source is disposed on the first layer and / or on the corresponding optoelectronic light source.

[0291] The term "individual light converter" can mean that one light converter is assigned to exactly one optoelectronic light source, and thus each optoelectronic light source comprises its own light converter that converts the light emitted from the corresponding light source to emit converted or at least partially converted light.

[0292] In some embodiments, the light converters of different light sources are separated from each other. In other words, the light converters are spaced apart and not in contact with each other.

[0293] In some embodiments, the optoelectronic light sources are distributed over a first surface area of the first layer. These can be distributed over the first surface area in an irregular pattern or in a regular pattern, and they can form any desired shape or symbol, and each optoelectronic light source comprises its own light converter. The light converters can be different, so that different converted or at least partially converted light can be obtained from different optoelectronic light sources.

[0294] In some embodiments, the photoelectronic device forms at least partially transparent panes of a vehicle, particularly the vehicle's windshield or windows. Thus, the panes, particularly the windshield or windows, have a plurality of photoelectronic light sources, each having an individual photoconverter. The photoelectronic light sources can illuminate the panes at least partially and / or display information on at least a portion of the panes.

[0295] The optoelectronic device can be, for example, a headliner, a roof, or part of another surface such as the exterior surface of a vehicle. Therefore, the optoelectronic device can have a three-dimensional shape and / or be positioned on a curved surface. Thus, the headliner or exterior surface can have multiple optoelectronic light sources, each light source having an individual phototransistor to illuminate the headliner or exterior surface at least partially and / or to display information on at least a portion of the headliner or exterior surface.

[0296] In some embodiments, LEDs are used as photoelectron sources. These LEDs can be specifically called mini-LEDs. These mini-LEDs are small LEDs, for example, with an edge length of less than 200 μm, especially less than 40 μm, and especially in the range of 200 μm to 10 μm. Other ranges are 150 to 40 μm. However, LEDs can also be called micro-LEDs (also called μLEDs) or μLED chips, especially if their edge length is in the range of 100 μm to 10 μm.

[0297] Mini-LEDs or μLED chips can be used as photoelectron light sources. Mini-LEDs or μLED chips can form pixels or subpixels and emit light of a selected color. In preferred embodiments, mini-LEDs or μLED chips can be unpackaged semiconductor chips. Being unpackaged may mean that the chip does not have a housing around its semiconductor layer, such as an unpackaged semiconductor die.

[0298] A photoconverter corresponding to a photoelectron light source may include conversion particles to convert the light emitted from the photoelectron light source into light of a selected color, such as green, blue, red, or yellow. However, a photoconverter corresponding to a photoelectron light source may also include conversion particles to partially convert the light emitted from the photoelectron light source to emit mixed light, such as white light.

[0299] Converting light emitted from a photoelectron light source to emit white light, at least partially, has the advantage of simplifying the wiring and control of the light source compared to mixing white light using RGB pixels. For example, in transparent windshields or headliners, wiring and control should be kept to a minimum to ensure the transparency of the photoelectron device.

[0300] Furthermore, white light may be required to replicate the effect of light on the vehicle's headliner, particularly a transparent headliner, or on reading lights positioned in the headliner or the vehicle's side windows. In some embodiments, providing a photoelectron light source that emits white light to display, for example, a logo or symbol can be a stylistic aspect.

[0301] In some embodiments, each photoconverter includes conversion particles with a diameter of at least about 1 μm to 30 μm, and in particular, a diameter of at least about 3 μm to 10 μm. Such small photoconverting particles can be used in combination with, for example, small LEDs, because the small conversion particles help ensure the desired conversion of light emitted from the LEDs. Furthermore, if a photoelectron light source is bonded to a first layer, for example by the use of an adhesive, and the adhesive contains conversion particles and thus forms a photoconverter, then the conversion particles must be small enough to fit into the gap between the photoelectron light source and the first layer and convert the light emitted from the photoelectron light source.

[0302] In some embodiments, each optical converter includes a quantum dot that functions as a conversion particle. The quantum dot is a small semiconductor particle, several nanometers in size, which, according to quantum mechanics, may have different optical and electronic properties than larger particles.

[0303] The photoconverter is preferably configured to convert light of a first wavelength emitted from a photoelectron light source into light of a second wavelength, wherein the first wavelength is different from the second wavelength, and in particular, the first wavelength is smaller than the second wavelength. By using different conversion particles, the photoconverter can convert light into various colors, such as red, green, blue, and yellow.

[0304] In some embodiments, the photoelectron source is distributed over a first surface region of a first layer, the first surface region being larger than the sum of the cross-sectional areas of the photoelectron sources, and in particular at least about 30 times larger. The cross-sectional area of ​​the photoelectron source is defined in particular by the cross-section passing through the photoelectron source in a plane that is at least substantially parallel to the first surface region, or rather, in a plane that is at least substantially perpendicular to the main emission surface of the photoelectron source.

[0305] In some embodiments, the first surface region is larger than the total luminescent surfaces of the photoelectron light source distributed over the first surface region of the first layer, and is particularly larger by at least about 30 times.

[0306] In some embodiments, the photoelectron sources are distributed in an irregular pattern across a first surface region of a first layer. This can mean that the photoelectron sources are not distributed in a regular matrix having multiple regularly arranged rows and columns across the first surface region of the first layer. However, the irregular pattern of the photoelectron sources may include a single row or column of photoelectron sources arranged among even more irregularly distributed photoelectron sources.

[0307] In some embodiments, the photoelectron sources are distributed in a regular pattern across a first surface region of a first layer. This can mean that the photoelectron sources are distributed in a matrix having at least one row and at least one column across the first surface region of the first layer, and each photoelectron source is individually addressable.

[0308] In some embodiments, each optical converter is positioned within the beam path of light emitted from a corresponding photoelectron light source.

[0309] In some embodiments, each photoconverter has the form of a droplet that covers or encapsulates the corresponding photoelectron light source. The droplet may contain or consist of, for example, an adhesive having conversion particles. Thus, the droplet can form a photoconverter. The adhesive can be dropped onto the photoelectron light source, in particular one drop per photoelectron light source, in at least a substantially liquid state. The adhesive hardens after forming droplets on each photoelectron light source by capillary force.

[0310] In some embodiments, each optical converter is positioned between the first layer and the corresponding photoelectron light source. Each optical converter may include, for example, an adhesive for fixing the corresponding photoelectron light source to the first layer. Thus, the optical converter can form a glue fillet to fix the corresponding photoelectron light source to the first layer.

[0311] In some embodiments, each photoconverter is positioned on the first layer, opposite to the corresponding photoelectron light source, and facing the light-emitting surface of the corresponding photoelectron light source. Thus, each photoconverter and the corresponding photoelectron light source can be positioned on two different sides of the first layer.

[0312] In some embodiments, each photoconverter is formed as a (particularly bonded) platelet placed on a first layer and facing the light-emitting surface of the corresponding photoelectron light source. Each platelet may contain conversion particles placed within a matrix material such as silicon, glass, or polysiloxane. Alternatively, each photoconverter may be printed directly onto the first layer by using a material (particularly an ink) containing the conversion particles.

[0313] In some embodiments, a light-blocker extends circumferentially around each photoconverter, particularly forming a light-blocking structure on a first layer. In other words, each photoconverter is surrounded by a light-blocker, particularly when viewed in a view perpendicular to the first surface area of ​​the first layer. The light-blocker may include, for example, black light-blocking particles that block light emitted from a photoelectron light source. Thus, the light can be coupled along the optical path and is not blocked, for example, in the direction perpendicular to the main light-emitting surface of the photoelectron light source. In particular, the light-blocker can block output coupling of light on the sides of the photoconverter.

[0314] In some embodiments, the contact areas between the first layer and each optical transducer and / or between the first layer and each photoelectron light source can be roughened. This allows the light from the photoelectron light source to be coupled to the optical transducer in an improved manner. Roughening can be achieved, for example, by processing the contact areas using laser light. However, any technique or material known from the prior art can be used to couple the light from the photoelectron light source to the transducer.

[0315] In some embodiments, each optical converter and optionally a corresponding photoelectron light source are embedded in a first layer. The optical converter can be completely embedded in the first layer, for example, such that the outer surface of the optical converter and the outer surface of the first layer are in the same plane. Alternatively, the optical converter can protrude from or retract into the first layer.

[0316] In some embodiments, each optical converter is embedded in the first layer on the side opposite to the corresponding photoelectron light source and facing the light-emitting surface of the corresponding photoelectron light source. In some embodiments, each optical converter is embedded in the first layer on the same side as the corresponding photoelectron light source.

[0317] The optical transducer can be embedded in the first layer, for example, by "hot embossing" the first layer and pressing the optical transducer into the first layer, or by filling the resulting cavity with the optical transducer. This can be advantageous in reducing the topology of the first layer compared to, for example, bonding the optical transducer onto the first layer.

[0318] In some embodiments, the optoelectronic device further comprises a set of light sources that do not have photoconverters. Thus, the optoelectronic device has a set of light sources to which photoconverters are associated and a set of light sources to which photoconverters are not associated.

[0319] In some embodiments, the photoconverter includes at least a first set of photoconverters and a second set of photoconverters. The second set of photoconverters is configured to convert light to a different wavelength than the first set of photoconverters. Thus, light emitted from the photoelectron light source can be converted, or at least partially converted, to at least two of the following types of light: white light and colored light (e.g., green light, blue light, red light, or yellow light).

[0320] In some embodiments, the optoelectronic device has at least one photoelectron light source. The at least one photoelectron light source is disposed on the first layer between a cover layer and a first layer. The first layer and the cover layer each contain or consist of at least partially transparent material, and the optoelectronic device is a vehicle wind deflector.

[0321] A wind deflector can be a small windshield for a vehicle, often made of plastic or glass. However, a wind deflector can also be an extension of the vehicle's existing windshield. Despite its appearance, the design of a wind deflector can be very durable and stable, even at high speeds. A wind deflector can prevent the driver and passengers of a vehicle from being exposed to wind and flying debris.

[0322] In some embodiments, a wind deflector can be an accessory that can be attached to a part of a vehicle that is often open while driving. Such parts may be, for example, windows and sunroofs. A wind deflector can prevent the driver and passengers from being exposed to wind. Furthermore, it can reduce noise and prevent flying debris from entering the vehicle.

[0323] In some embodiments, the wind deflector can be mounted on, for example, a two-wheeled, three-wheeled, or four-wheeled vehicle such as a motorcycle, or on, for example, a quad. In some embodiments, the wind deflector can be mounted on, for example, the handlebars of a two-wheeled, three-wheeled, or four-wheeled vehicle such as a motorcycle, or on, for example, the handlebars of a quad. Thus, the vehicle can be, for example, a motorcycle, a quad, a watercraft, an open-top race car, or any other two-wheeled, three-wheeled, or four-wheeled vehicle. The vehicle can also be, for example, a watercraft such as a boat or ship.

[0324] In some embodiments, the vehicle is neither a car nor a truck.

[0325] In some embodiments, the wind deflector may be the windshield or an extension of the windshield of a two-wheeled, three-wheeled, or four-wheeled vehicle, such as a motorcycle, quad, or trike. Other examples include watercraft such as boats, or topless race cars such as Formula One race cars.

[0326] In some embodiments, the first layer of the optoelectronic device includes or consists of an elastic plastic material such as polyethylene terephthalate (PET), polycarbonate (PC), or polyethylene naphthalate (PEN). Therefore, the first layer and optionally the entire optoelectronic device can be deformable, particularly flexible. However, the flexibility of the first layer and especially the entire optoelectronic device can be limited so that it can withstand high speeds and remain rigid.

[0327] In some embodiments, the cover layer includes or comprises an elastic foil made of an elastic plastic material, particularly polyvinyl chloride (PVC), polyvinyl butyral (PVB), or ethylene vinyl acetate (EVA). Thus, at least one photoelectron light source can be placed on the first layer, and the elastic foil can be laminated on at least one photoelectron light source.

[0328] In some embodiments, the first layer and the cover layer do not contain glass or glass-like material. A wind deflector can differ from a typical windshield of a vehicle, such as an automobile, in that it does not have a cover layer made of glass or glass-like material. Thus, a wind deflector can differ from a "normal" window, such as one made of safety glass.

[0329] In some embodiments, the optoelectronic device has one or more further layers positioned above the cover layer and / or below the first layer. All of the further layers may not contain glass in some embodiments. In particular, all layers of the optoelectronic device may not contain glass. However, a photoelectron light source may include a glass-like material in one or more of its components.

[0330] In some embodiments, at least one photoelectron light source is an LED. The LED can be specifically called a mini-LED. This mini-LED is a small LED, for example, with an edge length of less than 200 μm, especially less than 40 μm, and especially in the range of 200 μm to 10 μm. Other ranges are 150 to 40 μm. However, the LED can also be called a micro-LED (also called a μLED) or μLED chip, especially if the edge length is in the range of 100 μm to 10 μm.

[0331] Mini-LEDs or μLED chips can be used as photoelectron light sources. Mini-LEDs or μLED chips can form pixels or subpixels and emit light of a selected color. In preferred embodiments, mini-LEDs or μLED chips can be unpackaged semiconductor chips. Being unpackaged may mean that the chip does not have a housing around its semiconductor layer, such as an unpackaged semiconductor die.

[0332] In some embodiments, at least one photoelectron light source may be a volume emitter or a surface emitter. A volume emitter may emit light from its top surface, its sides, and its bottom surface, for example, through surface regions located between contact pads positioned on its bottom surface. A surface emitter may emit light from its top surface.

[0333] In some embodiments, at least one photoelectron light source is a plurality of photoelectron light sources arranged to form a symbol or indicator when the photoelectron device is operating. The symbol or indicator may be, for example, a navigation symbol, a warning symbol, a daytime running light, a position light, a charge level indicator, a speed indicator, or many more status indicators or driving information.

[0334] In some embodiments, at least one photoelectron light source is a plurality of photoelectron light sources arranged to form a display. By using the display, driving information or status indicators, such as actual driving information such as vehicle speed, or status indicators can be displayed.

[0335] While the optoelectronic device is operating, the symbol or indicator can be made visible to the user of the optoelectronic device, particularly in the vehicle. In other words, the symbol or indicator can be within the user's line of sight when the optoelectronic device is operating. The line of sight can be in the direction that the user's eyes are looking forward at the optoelectronic device, particularly when the user is in a driving position.

[0336] In some embodiments, a light shield is placed on either the first layer or the cover layer and faces at least one photoelectron light source. The light shield can block the light emitted from at least one photoelectron light source. Thus, it is obtained that the light emitted from at least one photoelectron light source exits the photoelectron device only in the desired direction. This prevents the user or a third party from being obscured from the view of the photoelectron device.

[0337] In some embodiments, the light shield is positioned to block the emission of light through the first layer or the cover layer. Thus, the light shield can be positioned between at least one photoelectron light source and a user of the photoelectron device, or between at least one photoelectron light source and a third party.

[0338] In some embodiments, the vehicle has an optoelectronic device according to one of the embodiments described above. The optoelectronic device is a wind deflector of the vehicle, and at least one photoelectronic light source of the optoelectronic device is positioned so as to be visible to the driver of the vehicle or to a person outside the vehicle.

[0339] In some embodiments, at least one photoelectron light source has a first set of light sources. The first set of light sources is positioned so that it is visible to the driver while the photoelectron device is operating. In other words, the first set of light sources can be within the vehicle user's line of sight while the photoelectron device is operating. The line of sight can be in the direction that the user's eyes are looking forward at the photoelectron device, particularly when the user is in a driving position.

[0340] In some embodiments, a first set of light sources is configured to provide information to the driver, and preferably, the first set of light sources forms symbols or indicators. The symbols or indicators may be, for example, navigation symbols, warning symbols, daytime running lights, position lights, charge level indicators, speed indicators, or many more status indicators or driving information.

[0341] In some embodiments, at least one photoelectron light source has a second set of light sources. The second set of light sources is positioned so that it is visible from the front and / or side of the vehicle during the operation of the photoelectron device. Thus, the second set of light sources can be seen by a person outside the vehicle.

[0342] In some embodiments, the optoelectronic device has a layer stack comprising a carrier layer, a cover layer, and a first layer. The first layer is, in particular, an intermediate layer disposed between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular a photoelectron light source, is disposed on the first layer, and at least one layer of the layer stack, preferably all layers of the layer stack, is at least partially transparent. The layer stack has at least one layer comprising particles that increase the thermal conductivity of the layer, and / or at least one thermal conductive layer disposed between two adjacent layers of the layer stack.

[0343] An electronic or optoelectronic element can be any element that generates heat during its operation, but the following description will primarily refer to a photoelectron light source.

[0344] Due to the increase in thermal conductivity, at least one layer of the layer stack contains particles with high thermal conductivity. The at least one layer may be one of the carrier layer, the cover layer, and the first layer, or another layer of the layer stack. The particles provide the thermal conductivity of each layer such that the overall thermal conductivity of that layer is at least 25% higher than the thermal conductivity of each layer without the particles.

[0345] A layer containing particles with high thermal conductivity and / or at least one thermal conductive layer can be configured, in particular, to transport heat generated from at least one photoelectron light source away from said photoelectron light source. At the same time, the particles can be arranged within at least one layer of the layer stack so as to achieve the desired transparency of the apparatus, and the thermal conductive layer can be designed so as to achieve the desired transparency of the apparatus.

[0346] A layer containing particles with high thermal conductivity and / or at least one thermal conductive layer can be configured, in particular, to transport heat away from electronic elements within the layer stack. Such electronic elements can be, for example, microintegrated circuits (μICs) or microintegrated circuit chips. Other examples of electronic elements are drivers, sensors, and detectors.

[0347] The formulation "arranged on" something does not necessarily have to be understood as something being directly placed on something else, and may include other elements placed between them. Thus, the formulation "arranged on something" can also be understood as something being indirectly placed above something else, or embedded in something else. In particular, the formulation "at least one photoelectron light source is arranged on a first layer" can be understood as the photoelectron light source being directly placed on the upper surface of the first layer, or as the photoelectron light source being placed above the upper surface of the first layer, but other elements may be placed between the photoelectron light source and the upper surface of the first layer. However, the formulation can also be understood as at least one photoelectron light source being placed on a first layer and partially or completely embedded in the first layer.

[0348] At least one thermal conductive layer may include a thermally conductive mesh, such as a metal mesh, particularly a copper mesh. The mesh may have knots and interconnects between the knots, preferably at least a large portion of which are uninterrupted. Thus, at least one thermal conductive layer may have a plurality of thin thermal conductive wires that are structured and connected to one another.

[0349] The mesh can have a regular or irregular pattern, and an irregular pattern may be preferable because it can increase the transparency of the heat conduction layer. This is because an irregular pattern may be more difficult for the human eye to perceive.

[0350] In some embodiments, at least one thermal conductive layer has a power line electrically connected to the contact pad of the photoelectron light source. The width of the power line can be at least half the width of the photoelectron light source. Therefore, the at least one thermal conductive layer can be made of a material with good electrical and thermal conductivity, such as copper, silver, gold, and aluminum. Thus, the thermal conductive layer can be configured to transport heat generated from the at least one photoelectron light source away from it, and to supply electrical energy to the at least one photoelectron light source. The width of the power line can be increased to ensure sufficient cooling of the at least one photoelectron light source.

[0351] In some embodiments, at least one thermal conduction layer has multiple transmission lines. The multiple transmission lines are electrically connected to the same contact pad of the photoelectron light source and extend parallel to each other in at least sections of the transmission lines. The transmission lines can be narrower in particular compared to the width of a single transmission line connected to the contact pad, and also in particular compared to the width of the photoelectron light source.

[0352] In some embodiments, at least one of the power lines has one or more blind conductive paths. A blind conductive path may be, for example, a conductive path having a free end. This free end is an end that is not connected to either at least one photoelectron light source or power source. A blind conductive path may function, for example, as a heat spreader that transports heat generated from at least one photoelectron light source away from the at least one photoelectron light source.

[0353] Power lines can be combined with multiple blind power lines to form patterns such as herringbone.

[0354] In some embodiments, at least one thermal conduction layer has one or more conductive wires that transport heat away from the photoelectron light source, but which are electrically disconnected from the photoelectron light source. Thus, the photoelectron light source may have further contact pads electrically disconnected from the photoelectron light source in order to transport heat away from the photoelectron light source. Conductive wires for transporting heat away from the photoelectron light source, but which are electrically disconnected from the photoelectron light source, may be connected to further contact pads, but may be disconnected from contact pads electrically connected to the photoelectron light source. Thus, the thermal conduction layer may have at least one power line electrically connected to the photoelectron light source in order to transport heat away from the photoelectron light source. Furthermore, the thermal conduction layer may serve to supply electrical energy to at least one photoelectron light source. Furthermore, the thermal conduction layer may have one or more conductive wires that transport heat away from the photoelectron light source but are electrically disconnected from the photoelectron light source.

[0355] In some embodiments, at least one thermal conduction layer has a coating, particularly a copper, palladium, or molybdenum coating. If at least one thermal conduction layer is made of a material with good electrical and thermal conductivity, such as a metal, the coating may reduce the visibility of the metal, for example, which normally reflects light. However, the coating may also increase the thermal conductivity of the thermal conduction layer.

[0356] In some embodiments, at least one thermal conductive layer is located between the first layer and at least one photoelectron light source. In some embodiments, at least one thermal conductive layer is located on the first layer, on the opposite side of the at least one photoelectron light source. Furthermore, in some embodiments, the first thermal conductive layer is located between the first layer and at least one photoelectron light source on the same side as the at least one photoelectron light source, and the second thermal conductive layer is located on the first layer, on the opposite side of the at least one photoelectron light source.

[0357] The first thermal conductive layer, or at least a portion of the first thermal conductive layer, can be connected to at least one photoelectron light source to transport heat generated from at least one photoelectron light source to a location away from said at least one photoelectron light source, and to supply electrical energy to said at least one photoelectron light source. The second thermal conductive layer can be, for example, able to transport heat generated from at least one photoelectron light source to a location away from said at least one photoelectron light source. The second thermal conductive layer can be electrically disconnected from at least one photoelectron light source.

[0358] In some embodiments, the layer stack further comprises a first auxiliary layer positioned between the cover layer and the first layer, and / or a second auxiliary layer positioned between the carrier layer and the first layer. The first and / or second auxiliary layers may be leveling layers comprising or composed of a material such as polyvinyl butyral (PVB) or ethylene vinyl acetate (EVA). If at least one photoelectron light source positioned on the first layer protrudes from the upper surface of the first layer, the first auxiliary layer may form a leveling layer such that the protruding portion of the photoelectron light source is embedded in the first auxiliary layer. The same applies to a protruding portion of at least one thermal conductive layer protruding from one of the layers of the layer stack, which can be embedded in the first and / or second auxiliary layer.

[0359] In some embodiments, at least one thermal conductive layer is located between a first auxiliary layer and a cover layer. In some embodiments, at least one thermal conductive layer is located between a second auxiliary layer and a carrier layer. Furthermore, in some embodiments, the first thermal conductive layer is located between the first auxiliary layer and the cover layer, and the second thermal conductive layer is located between the second auxiliary layer and the carrier layer. In all three cases, the thermal conductive layer can transport heat generated from, for example, at least one photoelectron source to a location away from said at least one photoelectron source, but in particular, is electrically isolated from said at least one photoelectron source.

[0360] In some embodiments, at least one thermal conductive layer may have a conductive mesh that can be configured as a so-called "metal-mesh sensor." The metal-mesh sensor can be used to identify organic elements (particularly human fingers) near the metal mesh and the position of those fingers. Such metal-mesh sensors are used, in particular, in touchscreens and displays with touch functionality. Thus, the thermal conductive layer can, on the one hand, be used to transport heat generated from at least one photoelectron light source away from said photoelectron light source, and further, it functions as a metal-mesh sensor to enable touch functionality for the photoelectron device.

[0361] In some embodiments, particles with high thermal conductivity are arranged in a first auxiliary layer and / or a second auxiliary layer. The particles can provide the thermal conductivity of the first auxiliary layer and / or the second auxiliary layer such that the overall thermal conductivity of the layer is at least 25% higher than that of the layer without the particles.

[0362] In some embodiments, the high thermal conductivity particles are made of a material that is at least partially transparent, such as glass or ceramic particles. In some embodiments, the high thermal conductivity particles are silicon dioxide (SiO2) particles. In particular, the high thermal conductivity particles can have a refractive index at least substantially the same as that of the material in the layer in which they are placed. In some embodiments, the particles can be made of a material having a specific phase transition temperature, at which the short-circuit temperature peak is buffered to some extent.

[0363] In some embodiments, at least one layer of the layer stack is colored. In some embodiments, at least one auxiliary layer is colored, which is positioned opposite the main emission direction of at least one photoelectron source, facing at least one photoelectron source. The colored layer can, for example, improve the optical properties of the optoelectronic device. However, the colored foil may increase the internal temperature of the layer stack. Therefore, it can be advantageous that the colored layer is not positioned in the main emission direction of at least one photoelectron source.

[0364] In some embodiments, a reflective layer is located between two layers of the layer stack. The reflective layer is configured to reflect light in the ultraviolet and / or infrared spectrum but transmit light in the visible spectrum. Preferably, the reflective layer is located on the first layer and between the first layer and at least one photoelectron light source. In some embodiments, the reflective layer is located between at least one photoelectron light source and a colored layer, and neither the reflective layer nor the colored layer is located in the main emission direction of at least one photoelectron light source.

[0365] In some embodiments, at least one thermal conductive layer is a coating, particularly a carbon nanotube (CNT), graphene, or indium tin oxide (ITO) coating. In some embodiments, at least one thermal conductive layer may be a coating on the surface of a cover layer facing a first layer, or at least one thermal conductive layer may be a coating on the surface of a carrier layer facing a first layer. Furthermore, in some embodiments, the first thermal conductive layer may be a coating on the surface of a cover layer facing a first layer, and the second thermal conductive layer may be a coating on the surface of a carrier layer facing a first layer.

[0366] In some embodiments, the optoelectronic device has a plurality of photoelectron sources arranged on a first layer. The plurality of photoelectron sources are arranged in particular between a cover layer and the first layer. A second layer is arranged above the plurality of photoelectron sources, and the second layer has a plurality of light scattering structures. Each light scattering structure is associated with one of the plurality of photoelectron sources, and each light scattering structure is individually designed, in particular by using focused light, especially laser light, depending on the operating parameters of the corresponding photoelectron source.

[0367] The formulation "arranged on" something does not necessarily have to be understood as something directly placed on something else, and may include other elements placed between them. Thus, the formulation "arranged on something" can also be understood as something indirectly placed above something else, or embedded in something else. In particular, the formulation "multiple photoelectron sources arranged on a first layer" can be understood as the photoelectron sources being directly placed on the upper surface of the first layer, or as the photoelectron sources being placed above the upper surface of the first layer, but with other elements placed between the photoelectron sources and the upper surface of the first layer. However, the formulation can also be understood as the photoelectron sources being placed on the first layer and partially or completely embedded in the first layer.

[0368] Each light scattering structure can be placed in a second layer above the corresponding photoelectron source so that the light scattering structure scatters the light emitted from the corresponding photoelectron source. In particular, each light scattering structure can scatter the light emitted from the corresponding photoelectron source so as to reduce the brightness of the light passing through the light scattering structure, or to change (e.g., improve) the conversion efficiency by scattering unconverted light back to the converter of the corresponding photoelectron source.

[0369] The uniformity of optoelectronic devices can be increased by using individually designed light scattering structures. For this purpose, individually designed light scattering structures can be placed above the photoelectron light source. Since light sources typically emit light with slightly different luminance or color values, the scattering structure can be designed to compensate for this difference, for example, achieving more uniform luminance or color on a display. Furthermore, improvements in uniformity can be obtained, for example, with respect to the color reproduction provided by the optoelectronic device. Therefore, the scattering structure can be individually configured according to the operating parameters of the corresponding photoelectron light source, for example, the luminance or color values ​​of the light emitted from a particular light source, in order to adapt the light so that the light emitted from the corresponding photoelectron light source does not interfere with the overall uniformity of the optoelectronic device.

[0370] Another advantage of such individually designed light scattering structures is that the binning process of the photoelectron sources can be simplified before placing the photoelectron sources on the first layer. By using individually designed light scattering structures, the uniformity of the photoelectron devices can be adjusted, allowing for a wider range of operating parameters to be selected for the bins. A wider range of operating parameters for the bins means that the values ​​of the operating parameters of individual photoelectron sources may differ, and the photoelectron sources will be correspondingly less expensive. At the same time, the uniformity of the photoelectron devices can be increased. This is in contrast to tighter binning, because the tighter the binning, the more expensive the sorting process becomes.

[0371] Individually designed light scattering structures can also enable the calibration of operating parameters (e.g., brightness or color values) of optoelectronic devices according to customer requirements.

[0372] In some embodiments, at least one, and preferably all, photoelectron sources have a photoconverter. The photoconverter is preferably located between the photoelectron source and a second layer. The photoconverter is preferably configured to convert light of a first wavelength emitted from the photoelectron source to light of a second wavelength, where the first wavelength is different from the second wavelength, and in particular, the first wavelength is smaller than the second wavelength. By using different photoconverters, the photoelectron source can emit light of various colors, such as red, green, blue, and yellow.

[0373] By using individually designed light scattering structures, the precision of selecting the amount of conversion particles in the photoconverter can be reduced because the uniformity of the optoelectronic device, particularly with respect to color, can be readjusted by using individually designed light scattering structures. This can be advantageous because the process of controlling the amount of conversion particles in the photoconverter can be simplified. This can be particularly advantageous for small photoelectron sources and therefore small photoconverters, because the amount of conversion particles required in the photoconverter decreases with increasing size.

[0374] Operating parameters that can affect the uniformity of optoelectronic devices include, for example, - Wavelength of light emitted from each photoelectron light source, - The amount of conversion particles in the photoconverter located above the optoelectronic device, and therefore the wavelength of the converted light, - The color value of the light emitted from each photoelectron light source, and / or, - Brightness of each photoelectron light source, It can be.

[0375] In some embodiments, each light scattering structure is individually designed so that light within a defined range of operating parameters is provided by the optoelectronic device.

[0376] In some embodiments, the operating parameter is the luminance of the corresponding photoelectron source. Each light scattering structure can be designed individually according to the luminance of the corresponding photoelectron source. Each light scattering structure can reduce the luminance of the light emitted from the corresponding photoelectron source to a defined level, for example, so that the photoelectron device provides uniform light within a defined range of luminance. The defined range can be, for example, 50% or less of the luminance of the dimmest photoelectron source.

[0377] In some embodiments, at least one photoelectron source is not associated with a light scattering structure. This photoelectron source, not associated with a light scattering structure, may be, for example, the dimmest of several photoelectron sources. Therefore, the luminance of the light emitted from this dimmest photoelectron source can serve as a reference value for individually designing light scattering structures. Each light scattering structure can be individually designed to reduce the luminance of the light emitted from its corresponding photoelectron source to at least approximately the reference value level. However, a photoelectron source emitting light with a luminance at least approximately correlated with the reference value may not have a corresponding light scattering structure.

[0378] In some embodiments, the operating parameter is the color value of the light emitted from the photoelectron source. Each light scattering structure can be individually designed according to the color value of the light emitted from the corresponding photoelectron source, particularly after the light has been converted by the converter of the corresponding photoelectron source. Each light scattering structure can improve conversion efficiency, for example, by scattering unconverted light back to the converter. The color value can be changed, for example, by 0.1 in each of the x and y directions of the CIE xyY color space, which corresponds to about 100 color points. The change in color value is, in particular, to obtain a desired color value corresponding to the color value provided by the selected photoelectron source. In the CIE xyY color space, the Y parameter can be a measure of the luminance of the color, and the chromaticity can be specified by two derived parameters x and y. In some embodiments, the color value can be correlated to a so-called "tristimulus value".

[0379] In some embodiments, each light scattering structure is associated with a photoelectron light source that provides a specific color (e.g., red, green, or blue, etc.) after the light has been converted by the converter of the corresponding photoelectron light source, but is individually designed such that the color value is within a predetermined range with respect to the color value of the light provided by one of the selected photoelectron light sources. The predetermined range can be within a difference (delta) of 0.1, 0.05, or 0.03 in the x and y directions of the CIE xyY color space, respectively, with respect to the color value of the light provided by the selected photoelectron light source.

[0380] In some embodiments, different light scattering structures scatter light in different ways, and in particular, each light scattering structure scatters light in different ways. A first light scattering structure can scatter, for example, a first portion of light emitted from a corresponding photoelectron light source, and a second light scattering structure can scatter a second portion of light emitted from the corresponding photoelectron light source, with the first and second portions being different. Thus, the second layer can include multiple light scattering structures, each of which can be individually designed and scatter light in different ways.

[0381] In some embodiments, at least one layer, and preferably all, of the optoelectronic device comprises or consists of a material that is at least partially transparent.

[0382] In some embodiments, each light scattering structure extends to the outer edge of the corresponding photoelectron source when viewed from above the second layer. Therefore, the cross-sectional area of ​​each light scattering structure in a plane parallel to the upper surface of the second layer can be larger than the cross-sectional area of ​​the corresponding photoelectron source in another plane parallel to the upper surface of the second layer. However, the outer edge of each light scattering structure can correlate with or be located within the outer edge of the corresponding photoelectron source when viewed from above the second layer. Therefore, the cross-sectional area of ​​each light scattering structure in a plane parallel to the upper surface of the second layer can be less than or equal to the cross-sectional area of ​​the corresponding photoelectron source in another plane parallel to the upper surface of the second layer.

[0383] If the cross-sectional area of ​​each light scattering structure is larger than the cross-sectional area of ​​the corresponding photoelectron source, the light emitted from the corresponding photoelectron source will not pass through the light scattering structure much, or not at all, and in particular, all the light will pass through the light scattering structure. If the cross-sectional area of ​​each light scattering structure is less than or equal to the cross-sectional area of ​​the corresponding photoelectron source, the transparency of the second layer can be increased.

[0384] In some embodiments, each light scattering structure can have isotropic or anisotropic properties. This means, on the one hand, that each light scattering structure can scatter light equally in all spatial directions such that the light emitted from the light scattering structure has at least approximately equal brightness, independently of the viewing angle to the light scattering structure. Alternatively, each light scattering structure can scatter light differently in different spatial directions, for example, depending on the form of the light scattering structure.

[0385] In some embodiments, the first layer is located between the cover layer and the carrier layer. In some embodiments, the second layer corresponds to the cover layer.

[0386] In some embodiments, the optoelectronic device further comprises a first auxiliary layer disposed between the cover layer and the first layer, and / or a second auxiliary layer disposed between the carrier layer and the first layer. The first and / or second auxiliary layers may be leveling layers comprising or composed of a material such as polyvinyl butyral (PVB) or ethylene vinyl acetate (EVA). If the photoelectron light source is disposed on the first layer protruding from the upper surface of the first layer, the first auxiliary layer may form a leveling layer such that the protruding portion of the photoelectron light source is embedded in the first auxiliary layer.

[0387] By using individually designed light scattering structures, variations in the thickness of any of the layers of the optoelectronic device, as well as variations in the brightness and color of the light emitted from the optoelectronic device, can be compensated for, thereby achieving the desired uniformity of the optoelectronic device.

[0388] In some embodiments, the set of optoelectronic devices includes at least two optoelectronic devices according to any one of the embodiments described above. At least some of the light scattering structures of one optoelectronic device are designed or arranged differently from the light scattering structures of the other optoelectronic device. Thus, the two optoelectronic devices are different from each other because the individually designed light scattering structures are designed and / or arranged differently for both optoelectronic devices.

[0389] In some embodiments, a method for manufacturing an optoelectronic device comprises the step of providing a plurality of photoelectron sources arranged on a first layer. The method further comprises the step of generating a plurality of light scattering structures in a second layer above the plurality of photoelectron sources. Each light scattering structure is associated with a photoelectron source. The step of generating the light scattering structures includes generating the light scattering structures individually in the second layer according to the operating parameters of the corresponding photoelectron sources, particularly by using laser light.

[0390] In some embodiments, prior to the step of generating a plurality of light scattering structures, the method further comprises a step of determining the values ​​of operating parameters for each photoelectron light source. This determining step may further include, for example, switching on the photoelectron devices so that the plurality of photoelectron light sources emit light. This determining step may include taking a top view of the photoelectron devices, in particular, by using a camera. In a further step, the determining step may include a measurement step based on the captured image to determine the values ​​of the operating parameters for each photoelectron light source. In the next step, a photoelectron light source having operating parameter values ​​that satisfy a predetermined criterion is identified.

[0391] In some embodiments, the method includes the step of generating a corresponding light scattering structure for a photoelectron source that is not a photoelectron source having operating parameter values ​​that satisfy a predetermined criterion. This light scattering structure is manufactured to scatter light from the photoelectron source such that the operating parameter values ​​of the corresponding photoelectron source satisfy a predetermined criterion, particularly when the light emitted from the photoelectron source passes through the corresponding light scattering structure. However, in some embodiments, the operating parameter values ​​when the light emitted from the photoelectron source passes through the corresponding light scattering structure do not need to satisfy a predetermined criterion, but only need to be within a predetermined range of the predetermined criterion.

[0392] In some embodiments, between the step of determining the values ​​of operating parameters for each photoelectron light source and the step of fabricating a light scattering structure, the method further includes the step of calculating an individual design for each light scattering structure according to the determined values ​​of the operating parameters for the corresponding photoelectron light source.

[0393] In some embodiments, the operating parameter is luminance, and a predetermined criterion requires that the photoelectron light source that satisfies the criterion is the dimmest of a plurality of photoelectron light sources.

[0394] In some embodiments, the step of fabricating a light scattering structure includes fabricating a light scattering structure for each photoelectron source that is not the darkest photoelectron source.

[0395] In some embodiments, each light scattering structure reduces the brightness of the corresponding photoelectron source to a level corresponding to or equal to the brightness of the dimmer photoelectron source.

[0396] In some embodiments, the process of fabricating a light scattering structure includes providing light scattering structures sequentially one after another using a laser, or providing two or more light scattering structures in parallel using two or more lasers.

[0397] By using laser light, scattering centers can be provided by laser writing to a second layer that forms a light scattering structure. These scattering centers may include, for example, defects in the material of the second layer.

[0398] In some embodiments, the optoelectronic device comprises a first layer (also referred to as a first layer segment), an intermediate or bottom layer of a layer stack, and a carrier layer and a cover layer (also referred to as second and third layers). The first layer may be positioned between the carrier layer and the cover layer. The first layer may carry at least one electron or optoelectronic element or optoelectronic light source, and / or at least one electron or optoelectronic element or optoelectronic light source may be partially or completely embedded in the first layer.

[0399] In some embodiments, the first layer is at least partially transparent and may consist of or include materials such as high-grade or low-grade polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), (colorless) polyimide (PI), polyurethane (PU), poly(methyl methacrylate) (PMMA), polycyclic aromatic hydrocarbons (PAK), or other suitable materials. In particular, the first layer may consist of or include at least partially transparent plastic, in particular at least partially transparent foil, in particular flexible foil.

[0400] The carrier layer and cover layer may each be made of glass material, plastic material, and / or other suitable material. The carrier layer and cover layer may each consist of a single layer or several layers made of the same or different materials.

[0401] In some embodiments, the optoelectronic device further comprises at least one auxiliary layer (also called an adhesive layer), a planarization layer, the bottom layer of a layer stack, a second or third layer, or further layers. The first auxiliary layer may be located between the first layer and the cover layer, and optionally, the second auxiliary layer may be located between the first layer and the carrier layer.

[0402] At least one auxiliary layer is as follows: Molten material layer or Adhesive layer, especially hot melt adhesive layer, For example, resins such as ethylene vinyl acetate (EVA) and polyvinyl butyral (PVB), or Ionomer-based systems, It can be formed by one of the following.

[0403] In some embodiments, at least one auxiliary layer can surround the first layer with the same layer. At least one auxiliary layer can have the same height as the first layer, but at least one auxiliary layer can also have a different height from the first layer, in particular, a height greater than the first layer. At least one auxiliary layer can surround the first layer not only in the circumferential direction, because the first layer can be completely embedded in at least one auxiliary layer.

[0404] In some embodiments, at least one auxiliary layer can be at least partially transparent. In some embodiments, at least one auxiliary layer can be blackened, resulting in an auxiliary layer that is at least partially transparent. If the optoelectronic device has two or more auxiliary layers, none of the auxiliary layers can be blackened, one of the auxiliary layers can be blackened, a selection of the auxiliary layers can be blackened, or all of the auxiliary layers can be blackened.

[0405] In some embodiments, at least one electronic or photoelectron element, or photoelectron light source, particularly an LED, can be less than 300 μm, and especially less than 150 μm. Due to such spatial extent, at least one electronic or photoelectron element or photoelectron light source is practically invisible to the human eye.

[0406] In some embodiments, at least one electronic or photoelectron element or photoelectron light source is an LED. The LED can be specifically called a mini-LED. This mini-LED is a small LED, for example, with an edge length of less than 200 μm, particularly less than 40 μm, and particularly in the range of 200 μm to 10 μm. Other ranges are 150 μm to 40 μm.

[0407] Furthermore, LEDs can also be called microLEDs (also called μLEDs) or μLED chips, especially when their edge length is in the range of 100 μm to 10 μm. In some embodiments, the LEDs may have spatial dimensions of 90 × 150 μm, or they may have spatial dimensions of 75 × 125 μm.

[0408] In some embodiments, a mini-LED or μLED chip can be an unpackaged semiconductor chip. Being unpackaged can mean that the chip does not have a housing around its semiconductor layer, such as an unpackaged semiconductor die. In some embodiments, being unpackaged can mean that the chip does not contain organic materials. Therefore, an unpackaged device does not contain organic compounds containing covalently bonded carbon.

[0409] In some embodiments, each photoelectronic element or photoelectronic light source may have a mini-LED or μLED chip configured to emit light of a selected color. In some embodiments, each photoelectronic element or photoelectronic light source may have one or more mini-LEDs or μLEDs, for example, an RGB pixel (RGB-Pixel) having three mini-LEDs or μLED chips. The RGB pixel may emit light of, for example, red, green, and blue, as well as any mixed color.

[0410] In some embodiments, the RGB pixels may further include one or more integrated circuits (ICs), particularly miniature integrated circuits such as microintegrated circuits (μICs).

[0411] In some embodiments, the optoelectronic device has at least one conductor wire (also called a conductor path, conductor layer segment, or part of an electrical conductor arrangement), and preferably two conductor wires, in particular for supplying electrical energy and / or data signals to at least one electronic or optoelectronic element or optoelectronic light source.

[0412] In some embodiments, the first layer supports at least one conductor wire. However, in some embodiments, at least one auxiliary layer may support at least one conductor wire.

[0413] In some embodiments, at least one conductor wire may be made of a conductive material, such as copper. At least one conductor wire may be coated and / or blackened to reduce the reflectivity of the outer surface region of at least one conductor wire. The coating may be, for example, a palladium or molybdenum coating. In some embodiments, at least one conductor wire may have a width in the range of 5 μm to 50 μm.

[0414] In some embodiments, at least one conductor wire can be formed as a conductive mesh, in particular as a metal mesh. The mesh can be coated and / or blackened, in particular, to reduce the reflectivity of the outer surface area of ​​the conductive mesh. The coating can be, for example, a palladium or molybdenum coating.

[0415] In some embodiments, the optoelectronic device has a layer stack comprising a first layer, a cover layer, and a carrier layer. The first layer is, in particular, an intermediate layer disposed between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular a photoelectron light source, is disposed on the first layer, and at least one layer of the layer stack, and preferably all layers of the layer stack, is at least partially transparent. The layer stack has at least one conductive layer, which is disposed between two adjacent layers of the layer stack or embedded within a layer.

[0416] In some embodiments, at least one conductive layer has at least one conductive wire electrically connected to a contact pad of a photoelectron light source. The at least one conductive layer can be made of a material with good electrical and thermal conductivity, such as copper, silver, gold, and aluminum. The at least one conductive layer, and in particular the at least one conductive wire, can be coated and / or blackened to reduce the reflectivity of the outer surface region of the at least one conductive wire. The coating can be, for example, a palladium or molybdenum coating. In some embodiments, the at least one wire can have a width in the range of 5 μm to 50 μm.

[0417] At least one conductive layer may have a conductive mesh, for example, a metal mesh, particularly a copper mesh. The mesh may have knots and interconnections between knots, preferably at least a large portion of which are uninterrupted. Thus, at least one conductive layer may have a plurality of conductive wires that are structured and connected to one another.

[0418] The mesh can have a regular or irregular pattern, and an irregular pattern may be preferable because it can increase the transparency of the conductive layer. This is because an irregular pattern can be more difficult for the human eye to perceive.

[0419] In some embodiments, the conductive mesh is coated and / or blackened, in particular to reduce the reflectivity of the outer surface area of ​​the conductive mesh. The coating may be, for example, a palladium or molybdenum coating.

[0420] At least some embodiments of the optoelectronic devices described herein can be placed on non-planar or curved surfaces, for example, on the exterior or interior of a vehicle or building. This is possible, in particular, because at least some embodiments of the optoelectronic devices described herein can be constructed based on a flexible layered structure.

[0421] Therefore, the present invention also relates to larger entities, such as vehicles or buildings, which have at least one optoelectronic device on their exterior or interior, particularly on their outer or inner surfaces.

[0422] The description using exemplary embodiments does not limit the present invention thereto. Rather, the present invention includes any new features and any combination of features, and in particular any combination of features described in the claims, even if such features or combinations are not expressly described in the claims or exemplary embodiments. [Brief explanation of the drawing]

[0423] The present invention will be described below by using only examples and by referring to exemplary embodiments together with the accompanying drawings.

[0424] [Figure 1] A schematic diagram illustrating an exemplary embodiment of the optoelectronic device according to the present invention. [Figure 2] Schematic cross-sectional view illustrating one embodiment of the optoelectronic device according to the present invention. [Figure 3] Schematic cross-sectional view illustrating another embodiment of the optoelectronic device according to the present invention. [Figure 4] Schematic cross-sectional view illustrating a further embodiment of the optoelectronic device according to the present invention. [Figure 5] Schematic cross-sectional view illustrating yet another embodiment of the optoelectronic device according to the present invention. [Figure 6] Schematic cross-sectional view illustrating a further embodiment of the optoelectronic device according to the present invention. [Figure 7] Schematic cross-sectional view illustrating a further embodiment of the optoelectronic device according to the present invention. [Figure 8] Schematic cross-sectional view illustrating another embodiment of the optoelectronic device according to the present invention. [Figure 9] Flowchart of an exemplary embodiment of the method according to the present invention [Figure 10] Figure 10A is a cross-sectional view of an optoelectronic device, and Figure 10B is a cross-sectional view of another optoelectronic device. [Figure 11] Figures 11A to 11C are process diagrams of exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 12]Figures 12A to 12C are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 13] Figures 13A to 13C are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 14] Figures 14A to 14C are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 15] Figures 15A and 15B are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 16] Figures 16A to 16D show cross-sectional and top views of the intermediate product. [Figure 17] Figures 17A to 17C are cross-sectional views of exemplary embodiments of the optoelectronic device according to the present invention. [Figure 18] Figures 18A to 18C show cross-sectional views of the intermediate product. [Figure 19] Figures 19A to 19C are cross-sectional views of exemplary embodiments of the intermediate product. [Figure 20] Figures 20A to 20E show scanning electron microscope (SEM) images of exemplary embodiments of the optoelectronic device according to the present invention. [Figure 21] Figures 21A to 21C are process diagrams of exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 22] Top view of an intermediate product of an exemplary embodiment of the optoelectronic device according to the present invention. [Figure 23] Top view of an intermediate product of an exemplary embodiment of another optoelectronic device according to the present invention. [Figure 24] Figures 24A to 24E are process diagrams of exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 25] Figures 25A to 25E are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 26] Figures 26A to 26E are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 27]Figures 27A to 27E are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 28] Figures 28A to 28E are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 29] Figures 29A to 29E are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 30] Figures 30A to 30D are process diagrams of an exemplary embodiment of the method for manufacturing an optoelectronic device according to the present invention. [Figure 31] Figures 31A to 31E are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 32] Figures 32A to 32D are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 33] Figures 33A to 33C are process diagrams of other exemplary embodiments of the method for manufacturing an optoelectronic device according to the present invention. [Figure 34] Process diagram of an exemplary embodiment of a method for manufacturing an optoelectronic device according to the present invention. [Figure 35] Process diagram of another exemplary embodiment of the method for manufacturing an optoelectronic device according to the present invention [Figure 36] Process diagram of another exemplary embodiment of the method for manufacturing an optoelectronic device according to the present invention [Figure 37] Process diagram of another exemplary embodiment of the method for manufacturing an optoelectronic device according to the present invention [Figure 38] Figure 38A shows a top view and a cross-sectional view of the optoelectronic device, and Figure 38B shows a top view and a cross-sectional view of one embodiment of the optoelectronic device according to the present invention. [Figure 39] Cross-sectional view of an optoelectronic device [Figure 40] Cross-sectional view of the optoelectronic device according to the present invention [Figure 41] Figures 41A to 41C are top views of one embodiment of the optoelectronic device according to the present invention, respectively. [Figure 42] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 43] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 44] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 45] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 46] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 47A] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 47B] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 48A] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 48B] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 49] Top view of one embodiment of the optoelectronic device according to the present invention [Figure 50] Top view of another embodiment of the optoelectronic device according to the present invention [Figure 51] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 52] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 53] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 54] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 55] Cross-sectional view of another embodiment of the optoelectronic device according to the present invention [Figure 56] Cross-sectional and top views of an optoelectronic device [Figure 57] Cross-sectional and top views of other optoelectronic devices [Figure 58] Cross-sectional view and top view of the optoelectronic device according to the present invention [Figure 59] Cross-sectional view and top view of another optoelectronic device according to the present invention [Figure 60] Cross-sectional view and top view of another optoelectronic device according to the present invention [Figure 61]Cross-sectional view and top view of another optoelectronic device according to the present invention [Figure 62] Cross-sectional view and top view of another optoelectronic device according to the present invention [Figure 63] Cross-sectional view of another optoelectronic device according to the present invention [Figure 64] Cross-sectional view of another optoelectronic device according to the present invention [Figure 65] Figures 65A to 65C are process diagrams of the method for manufacturing an optoelectronic device according to the present invention. [Figure 66] A diagram showing the optoelectronic device according to the present invention mounted on a motorcycle. [Figure 67] A figure showing one embodiment of the optoelectronic device according to the present invention. [Figure 68] A figure showing one embodiment of the optoelectronic device according to the present invention. [Figure 69] Figures 69A and 69B show one embodiment of the optoelectronic device according to the present invention. [Figure 70] A figure showing one embodiment of the optoelectronic device according to the present invention. [Figure 71] A figure showing one embodiment of the optoelectronic device according to the present invention. [Figure 72] A figure showing one embodiment of the optoelectronic device according to the present invention. [Figure 73] Figures 73A to 73E show embodiments of a vehicle having an optoelectronic device according to the present invention. [Figure 74] Top view of the thermal conductive layer and photoelectron light source according to the present invention [Figure 75] Top view of another thermal conductive layer and photoelectron light source according to the present invention [Figure 76] Figures 76A and 76B show top views of the thermal simulation of the two heat conduction layers and the photoelectron light source. [Figure 77] Top view of another thermal conductive layer and photoelectron light source according to the present invention [Figure 78] Schematic top view of possible patterns of the thermal conductive layer according to the present invention [Figure 79] Figures 79A and 79B show top views of the thermal simulations of the two heat conduction layers and the photoelectron light source. [Figure 80] Cross-sectional view of the optoelectronic device according to the present invention [Figure 81] Cross-sectional view of one embodiment of the optoelectronic device according to the present invention [Figure 82] Cross-sectional view of one embodiment of the optoelectronic device according to the present invention [Figure 83] Cross-sectional view of one embodiment of the optoelectronic device according to the present invention [Figure 84] Cross-sectional view of one embodiment of the optoelectronic device according to the present invention [Figure 85] Cross-sectional view of one embodiment of the optoelectronic device according to the present invention [Figure 86] Cross-sectional view of one embodiment of the optoelectronic device according to the present invention [Figure 87] Cross-sectional view of one embodiment of the optoelectronic device according to the present invention [Figure 88] Figure 88A is a top view and cross-sectional view of one embodiment of the optoelectronic device according to the present invention, and Figure 88B is a top view and cross-sectional view of another embodiment of the optoelectronic device according to the present invention. [Figure 89] Process diagram of the method for manufacturing an optoelectronic device according to the present invention [Modes for carrying out the invention]

[0425] The exemplary optoelectronic device shown in Figure 1 may be pane 1. The pane 1, which is at least partially transparent, is part of the side door of the vehicle V. Inside pane 1 is a two-dimensional indicator area 17. This indicator area 17 displays, for example, a symbol indicating the charge status of the vehicle's battery. Here, the indicator area 17 is located in the lower left of pane 1. The indicator area 17 may further display symbols, colors, and / or animations. Additionally or alternatively, exhaust class, vehicle number, further technical data, or advertisements may be displayed in pane 1.

[0426] Pane 1 may have the cross-sectional structure shown in Figure 2. Pane 1 may include a carrier layer 7, an intermediate layer 3, and a cover layer 5. The adhesive layer 12 is used to bond the cover layer 5, the intermediate layer 3, and the carrier layer 7 to each other. Thus, the carrier layer 7, the intermediate layer 3, and the cover layer 5 can be bonded together.

[0427] Alternatively, the intermediate layer 3 may be a foil laminated on the cover layer 5 and carrier layer 7 without applying an additional adhesive layer 12. The cover layer 5 and carrier layer 7 may be, for example, glass layers. This allows each layer to consist of one or more glass layers, which may correspond to, for example, layers of safety glass.

[0428] The intermediate layer 3 can be flexible and conform to the non-planar shape of the glass layers 5 and 7. The foil can be made of plastic, such as PET (polyethylene terephthalate). The adhesive can be PVB (polyvinyl butyral). The glass can be replaced with PMMA (polymethyl methacrylate) and / or PC (polycarbonate).

[0429] The intermediate layer 3 supports a photoelectron component such as a photoelectron light source 9 (not shown in Figure 2). Furthermore, the intermediate layer 3 can function as an optical element because it can act as a guide for the light emitted from the light source 9, and can also provide a function for diffusing and / or extracting light from the intermediate layer 3.

[0430] As shown in Figure 3, the intermediate layer 3 can be foil, but can also function as a carrier for optoelectronic components (e.g., light source 9). The light source 9 can be, for example, an LED. The light source 9 can be a flip chip with both electrical contacts on its bottom surface. As shown in Figure 3, the light source 9a is inverted, and the electrical contacts of the light source 9a can be connected to the conductor path 11 using bond wires. The conductor path 11 is used to supply electricity to the light sources 9a and 9b. The conductor path 11 can be placed on the intermediate layer 3. As further shown in Figure 3, the electrical contacts on the bottom side of the flip chip 9b can be placed directly on the contacts of the conductor path 11.

[0431] The light source 9 can be, for example, a volume light emitter or a surface light emitter. A volume light emitter can emit light from its upper surface. The upper surface of a volume light emitter is on the opposite side from the bottom and is on the side surface of the volume light emitter. A surface light emitter can emit light from its upper surface. Light source 9a can be, for example, a surface light emitter that emits light from a surface in contact with the surface of the intermediate layer 3. Therefore, the emitted light can be emitted directly into the intermediate layer 3. Light source 9b can be a surface light emitter that emits light from an upper surface facing away from the intermediate layer, or it can be a volume light emitter. Light source 9b cannot be used to input light into the intermediate layer 3.

[0432] The light source 9 can have a size in the range of 50 μm × 50 μm × 4 μm and can be supplied as a chip without a package. The double arrows in Figure 3 indicate the spatial extent of electrically and mechanically connected chips in the range of less than 200 μm, in particular less than 150 μm. The spacing between adjacent chips can be within the same range or greater. Therefore, switched-off chips are invisible or barely visible.

[0433] Figure 4 is a cross-sectional view of an optoelectronic device, specifically a pane (see pane 1 in Figure 1). Here, the light source 9 is, for example, a chip without a package and is at least partially integrated into the intermediate layer 3. The intermediate layer 3 can be a resilient foil.

[0434] For example, the light source 9 is embedded in the intermediate layer 3. An electrical conductor path 11 is arranged on one surface of the intermediate layer 3. The intermediate layer 3 can also function as an adhesive, and therefore a separate adhesive layer is not required.

[0435] The intermediate layer 3 in Figure 3 can provide an optical guide function based on the setting that it has a higher refractive index than the materials of the cover layer and carrier layer adjacent to the intermediate layer 3. The electrical conductor path 11 is made of a metal such as silver or gold, or a transparent conductive material such as ITO.

[0436] The three light sources 9 on the right side of Figure 4 have reflective structures 15, 15a, 15b, and 15c on one or both of the main surfaces of each light source 9. The main surfaces are the top and bottom surfaces, and if the light source 9 is a flip chip as shown in Figure 4, both electrical contacts are on the bottom surface. In the view of Figure 4, the top surface of the light source 9 faces downward, and the electrical contacts of the flip chip are attached to their respective conductive paths 11.

[0437] The reflective structures 15 on the top and / or bottom surfaces of the chip can be mirrors 15a, metal coatings 15b, and / or dielectric coatings 15c. The metal coatings 15b can contain or consist of aluminum and / or silver and / or gold. Other metals are also possible. The dielectric coatings 15c can be distributed Bragg reflectors. The reflective structures 15 can be combined. Therefore, different reflective structures can be provided on the same chip. The reflective structures allow the chip to function as a side-emitting element that effectively emits light through the sidewalls that do not have reflective structures. Thus, the light emitted from the light source 9 is efficiently distributed within the intermediate layer 3.

[0438] Next, referring to Figure 5, the photoelectron light source 9, provided as an LED chip, is again pressed into the intermediate layer 3. This intermediate layer 3 is a foil and may have a conductive path 11 on its upper surface. In the example of Figure 5, the conductive path 11 can reach into the foil so as to contact the electrical contacts of the light source 9, which are facing away from the upper surface of the intermediate layer 3.

[0439] The intermediate layer 3 may include a conversion material 21. For example, the light source may be configured to emit UV light or blue light that can be converted to longer wavelength light (e.g., red light) by using the conversion material 21. The conversion material 21 may be placed at a predetermined distance from the light source 9, and the intermediate layer 3 may function as a light guide to direct the light from the light source 9 to the conversion material 21. At least a portion of the converted light can exit the device in a direction perpendicular to the surface of the intermediate layer 3 at the location of the conversion material 21. Thus, the light can be seen externally.

[0440] In the example shown in Figure 6, the intermediate layer 3 is adapted to enable uniform surface illumination. The intermediate layer 3 is, for example, a foil. Electrical contacts and conductor paths 11 are formed on one main surface of the foil. The light source 9 is embedded within the foil and is, for example, an LED chip.

[0441] The LED chip can emit light into the foil 3 from at least partially its sides. A scattering or dispersion structure 13 is formed within the foil. For example, the dispersion or scattering structure 13 can be a diffusion center 13a. These can diffuse the emitted light L within and along the foil to a certain distance D. Within distance D, the light L can exit the foil at one or two main surfaces of the foil, i.e., the top and / or bottom surfaces of foil 3 as shown in Figure 6. The viewing angle α can be between 0° and 90° with respect to the direction perpendicular to the foil.

[0442] The diffusion centers 13a can be stamped into the foil and / or placed within the foil. The diffusion centers 13a can be provided as transparent particles 13b, white particles 13c, holes, bubbles, and / or as a change in the density of the foil material in the foil. The scattering structure 13 can also be formed on or on the surface of the foil 3.

[0443] The scattering concentration of the diffusion center 13 can be implemented such that the mean free path length is greater than the thickness of the foil 3. The size of the diffusion center 13a can be smaller than the wavelength of the emitted light. Therefore, the diffusion center can scatter in any direction. For example, the scattering or dispersing material can be titanium dioxide and / or zirconium.

[0444] To support the light-guiding function, the refractive index of foil 3 is greater than that of the surrounding material, for example, corresponding to the materials of the cover layer and carrier layer.

[0445] The optoelectronic device having the intermediate layer 3 shown in Figure 6 can provide a two-dimensional light-emitting region that is, for example, 5 to 1000 times larger than the size of the small photoelectron light source 9. It can provide uniform light extraction. The connected chip is preferably smaller than 150 μm and is therefore invisible.

[0446] In the example shown in Figure 7, pane 1 has a cover layer 5, an intermediate layer 3, and a carrier layer 7. The refractive index ni of the intermediate layer 3 is greater than the refractive index nj of the adjacent glass. Therefore, the intermediate layer 3 can function as an optical guide for the light provided by the photoelectron light source 9. The emitted light diffuses through and along the intermediate layer 3, for example, to the edge face of the intermediate layer 3.

[0447] The photoelectron light source 9 may be accompanied by reflective structures configured to guide the emitted light L through and along the intermediate layer 3. The reflective structures 15, 15b, and 15c can be formed on both main surfaces of the intermediate layer 3. Furthermore, the reflective structures 15 and 15a can be formed on the outer surface of the cover layer 5 and the outer surface of the carrier layer 7. The reflective structures can be, for example, a metal coating 15b or a dielectric coating 15c. The dielectric coating 15c can form a distributed Bragg reflector.

[0448] The example in Figure 8 has three cover layers 5 and three intermediate layers 3, which are stacked on top of one carrier layer 7. Inside each intermediate layer 3, at least one photoelectron light source 9, such as an LED or μLED, is incorporated. Reflective structures 15 are formed on the top and bottom surfaces of the light source 9.

[0449] Therefore, the light source 9 functions as a side-emitting element that emits light in a direction substantially parallel to the top and bottom surfaces of the intermediate layer 3. Thus, the light is distributed within the intermediate layer 3.

[0450] Each intermediate layer 3 further has at least one scattering structure 13 that covers the volume within the intermediate layer 3. The scattering structure 13 can be formed, for example, by diffusion centers 13a, transparent particles 13b, or white particles 13c.

[0451] Light sources 9 in different intermediate layers 3 emit light of different colors. For example, a light source 9 in one of the intermediate layers 3 emits red light. A light source 9 in another intermediate layer 3 emits green light, and a light source in the third intermediate layer 3 emits blue light.

[0452] At each scattering or dispersion structure 13, light L can exit the intermediate layer 3, particularly in the vertical direction and / or towards the sides of the cover layer 5 and towards the carrier layer 7, under a viewing angle α less than 45° relative to the vertical. For example, exit from the outer surface of the carrier layer 7 can be prevented by coating its outer surface with a light-absorbing layer. Thus, the light substantially exits only from the outer surface of the top cover layer 5, as shown in pane 1 of Figure 3.

[0453] The scattering or dispersion structures 13 are located at predetermined distances D1, D2, and D3 from the corresponding light source 9. The scattering or dispersion structures 13 are shifted relative to each other such that the light scattered from each structure 13 exits pane 1 at slightly different positions. The structures 13 do not interfere with each other in terms of light extraction from the intermediate layer. Therefore, a constant offset O is given between the structures 13.

[0454] By using structure 13, two-dimensional surface emission can be obtained. Therefore, for example, a symbol or indicator can be visualized on the top surface of pane 1. Since each light source 9 in different intermediate layers 3 provides light of a different color, symbols or indicators of different colors can also be generated.

[0455] In some embodiments, pane 1 may be part of a vehicle window. Alternatively, pane 1 may be a cover for a vehicle lamp, a cover for a vehicle light, or a mirrored glass. Furthermore, pane 1 may be at least part of a headlight, taillight, or interior light. By covering at least part of the vehicle body, pane 1 may be a vehicle body lighting unit.

[0456] As shown in the flowchart of Figure 9, step S1 of the method for manufacturing the optoelectronic device involves placing at least one, preferably more, photoelectron light sources on at least one surface of the intermediate layer and / or embedding at least partially in the intermediate layer. Step S2 involves placing the intermediate layer between the cover layer and the carrier layer.

[0457] Next, referring to Figures 10A and 10B, two optoelectronic devices are shown. The inventors have found that fabricating LED substrates in their respective topographies to manufacture transparent LED substrates that are placed in glass (between two glass panes) or mounted behind glass panes is technically difficult to balance in subsequent processes. Such LED substrates can be seen, for example, in Figure 10A.

[0458] The inventors have further found that when LEDs on such an LED substrate are electrically interconnected, particularly with the help of the aforementioned PICOS process, the lowest possible topography is required to provide contact paths that overmolde the LED topography. As shown in Figure 10A, current LEDs, in particular flip-chip LEDs, require technically complex "ramps" or fillets to guide such contact paths to the LED contact pads.

[0459] To counter this situation, efforts have been made to embed LEDs into the substrate, as shown in Figure 10B. Such efforts include, for example, spacer foil with defined holes that conform to the LED layout, compensating foil ("perforated mask") that embeds the LEDs and thus levels the surface, or spayed material for surface planarization.

[0460] As shown in Figure 10B, this approach resulted in a gap between the LED and the substrate. This gap makes it difficult to electrically interconnect LEDs on such an LED substrate, especially with the help of the PICOS process, because the contact path of the LED to the contact pad needs to fill this gap.

[0461] Accordingly, an object of the present invention is to provide an improved optoelectronic device having a first layer, in particular a thermoplastic substrate, wherein at least one electronic or optoelectronic component is partially or completely embedded in the first layer, wherein, on the one hand, the lowest possible topography of the optoelectronic device is provided, and on the other hand, the occurrence of a gap between the first layer and the at least one electronic or optoelectronic component is prevented or at least minimized.

[0462] The optoelectronic device 1 in Figures 11C and 12C comprises a first layer 3, two electronic or optoelectronic components 9 (in particular, two μLEDs) which are fully (see Figure 11C) or at least partially (see Figure 12C) embedded in the first layer 3, and a structured conductor layer 11. A first portion 11.1 of the conductor layer 11 is located on the upper surface 3.1 of the first layer 3, and a second portion 11.2 of the conductor layer 11 is located on the upper surface 9.1 of the electronic or optoelectronic components 9 and is in contact with the electrical contacts 18 of the electronic or optoelectronic components 9. The electrical contacts 18 (in particular, contact pads) are located on the upper surface 9.1 of the electronic or optoelectronic components 9. The boundary region 19 is located between the upper surface 9.1 of the electronic or optoelectronic component 9 and the adjacent upper surface 3.1 of the first layer 3, and the intermediate portion 11.3 of the conductor layer 11 extends beyond the boundary region 19, interconnecting the first portion 11.1 of the conductor layer 11 and the second portion 11.2 of the conductor layer 11.

[0463] According to Figure 11C, the electronic or optoelectronic component 9 is completely embedded within the first layer 3 such that the upper surface 9.1 of the electronic or optoelectronic component 9 is positioned within a plane 20 that extends over the upper surface 3.1 of the first layer 3.

[0464] In Figure 12C, the electronic or optoelectronic component 9 is partially embedded in the first layer 3 such that its upper surface 9.1 protrudes from the upper surface 3.1 of the first layer 3 by a height H. Preferably, the height H is one-third or less of the thickness t of the electronic or optoelectronic component 9, and in particular, the height H is less than 20 μm.

[0465] Each of the first layers 3 has two recesses. The side surface 3.2 of the first layer 3 facing the shell surface 9.2 of the electronic or optoelectronic component 9 is formed by the side surface of the recess of the first layer 3. The electronic or optoelectronic component 9 is located in the recess of the first layer 3, and therefore the boundary region 19, each gap 21 shown in Figure 12C, is formed by the distance between the electronic or optoelectronic component 9 located in the recess of the first layer 3 and the side surface 3.2 of the first layer 3.

[0466] According to Figure 12C, the gap 21 is filled with a filler material 22, in particular, an adhesive. The filler material 22 forms a fillet weld between the upper surface 3.1 of the first layer 3 and the shell surface 9.2 of the electronic or optoelectronic component 9. Furthermore, the filler material 22 in the form of a fillet weld is partially placed within the gap 21, above the gap 21, and partially forming a fillet weld between the upper surface 3.1 of the first layer 3 and the shell surface 9.2 of the electronic or optoelectronic component 9.

[0467] Compared to Figures 10A and 10B, the topography of the optoelectronic device is reduced by embedding the electronic or optoelectronic components 9 in the first layer 3, thus simplifying subsequent processing of the optoelectronic device. Furthermore, boundary regions, particularly gaps, are preferably small to allow interconnection of the electronic or optoelectronic components 9, for example, using a PICOS process, because the distance / size of the gaps filled by the conductive layer may be limited for such a process.

[0468] According to Figure 11C, the filler material 22 is placed between the first layer 3 and the bottom surface 9.3 of the electronic or optoelectronic component 9. The bottom surface 9.3 of the electronic or optoelectronic component 9 is on the opposite side from the top surface 9.1 of the electronic or optoelectronic component 9.

[0469] Figures 11A and 11B show the process for manufacturing the optoelectronic device 1 according to Figure 11C, and Figures 12A and 12B show the process for manufacturing the optoelectronic device 1 according to Figure 12C.

[0470] In the first step, two electronic or optoelectronic components 9 are placed on the upper surface 3.1 of the first layer 3 and bonded to the upper surface 3.1 of the first layer 3 using adhesive 22. According to Figure 11A, the adhesive 22 is placed between the electronic or optoelectronic components 9 and the first layer, and according to Figure 12A, the adhesive 22 is placed between the electronic or optoelectronic components 9 and the first layer, and a fillet weld is formed between the upper surface 3.1 of the first layer 3 and the shell surface 9.2 of the electronic or optoelectronic components 9.

[0471] Next, two electronic or optoelectronic components 9 are embedded in the first layer 3. According to Figure 11B, the electronic or optoelectronic components 9 are fully embedded in the first layer 3, or, according to Figure 12B, are partially embedded in the first layer 3.

[0472] The embedding process can be carried out, for example, by locally heating the first layer 3 and pressing the electronic or optoelectronic component 9 into the upper surface 3.1 of the first layer 3, by heating the electronic or optoelectronic component 9 and pressing the electronic or optoelectronic component 9 into the upper surface 3.1 of the first layer 3, or by deep drawing at least a portion of the first layer 3 to create a recess 21 and pressing the electronic or optoelectronic component 9 into the recess 21.

[0473] Furthermore, the step of embedding at least one electronic or optoelectronic component 9 in the first layer 3 at least partially or completely may also be performed by heating the first layer 3 to a temperature just below the softening temperature of the material of the first layer 3, and heating the electronic or optoelectronic component 9, and in particular simultaneously pressing the electronic or optoelectronic component 9 into the upper surface 3.1 of the first layer 3.

[0474] In a further step, the structured conductor layer 11 is positioned as shown in Figures 11C and 12C. A first portion 11.1 of the conductor layer 11 is positioned on the upper surface 3.1 of the first layer 3, a second portion 11.2 of the conductor layer 11 is positioned on the upper surface 9.1 of the electronic or optoelectronic component 9, and an intermediate portion 11.3 of the conductor layer 11 extends beyond the boundary region 19 and interconnects the first portion 11.1 and the second portion 11.2 of the conductor layer 11.

[0475] Figures 13A to 13C show steps of another exemplary embodiment of the method for manufacturing an optoelectronic device according to the present invention. In contrast to Figures 11A to 11C, the electronic or optoelectronic component 9 is bonded to the first surface 3.1 using a temporary adhesive 22. For example, if the step of embedding the electronic or optoelectronic component 9 in the first layer 3 is performed by locally heating the first layer 3 and pressing the electronic or optoelectronic component 9 into the upper surface 3.1 of the first layer 3, or by heating the electronic or optoelectronic component 9 and embedding it in the first layer 3, the temporary adhesive 22 will evaporate at least partially or completely. Therefore, the optoelectronic device 1 in Figure 13C has no adhesive at all between the electronic or optoelectronic component 9 and the first layer 3. However, residue of the temporary adhesive may remain between the electronic or optoelectronic component 9 and the first layer 3.

[0476] As shown in Figures 14A to 14C, another exemplary embodiment of the method for manufacturing an optoelectronic device according to the present invention involves using a heated stamp 30 to pick up an electronic or optoelectronic component 9, heating the component, positioning the component at various locations on the upper surface 3.1 of the first layer 3, and pressing the component into the first layer 3 at each location. Furthermore, the first layer 3 can be heated to a temperature just below the softening temperature of the material of the first layer 3. Therefore, no adhesive is required to fix the electronic or optoelectronic component 9 to the first surface 3.1 because the heated stamp 30 holds the electronic or optoelectronic component 9 in place while pressing it into the first layer 3.

[0477] Figures 15A and 15B show steps of another exemplary embodiment of the method for manufacturing the optoelectronic device 1 according to the present invention. In addition to the embodiments described above, the optoelectronic device 1 has a second layer 26, in particular a first thermal release film or laminate, disposed on the surface of the first layer 3 opposite to the top surface 3.1. The optoelectronic device 1 further comprises A carrier layer 7, specifically a PET carrier layer, is located on the second layer 26, opposite to the first layer 3. A third layer 27, in particular a second thermal release film or photoresist layer, is positioned on the carrier layer 7 on the opposite side from the second layer 26. The third layer 27 has a provisional carrier layer 28 located on the opposite side from the carrier layer 7.

[0478] An electronic or optoelectronic component 9 can be embedded in the first layer with the help of any one of the steps described above, and as shown in Figure 15B, a multilayer 110 of three structured conductive layers 11a, 11b, and 11c is arranged on the first surface 3.1, the upper surface 9.1, and the electrical contacts 18. The three structured conductive layers 11a, 11b, and 11c are arranged overlapping each other, and adjacent conductive layers 11a, 11b, and 11c are separated from each other by isolation layers 24a, 24b. Each conductive layer includes one or more conductive vias filled with dielectric material 25, more specifically, each conductive layer includes conductive paths interconnecting different conductive layers, and the contact portions of the conductive layers have sinks filled with dielectric material 25. The dielectric material can be arranged on the conductive layers in the form of planarization layers and can be optically structured in particular.

[0479] Figure 15B further illustrates the gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 3.2 of the first layer 3 facing the shell surface 9.2. The gap is filled with a filler 22, in particular a planarizing layer, to provide a flat surface for the filler 22 within a plane 20 extending to the upper surface 3.1 of the first layer 3.

[0480] An electronic chip 29 (e.g., an integrated circuit (IC)) is placed on a multilayer 110 of three structured conductor layers 11a, 11b, and 11c, and is electrically coupled to at least one of the structured conductor layers 11a, 11b, and 11c.

[0481] Figures 16A to 16D show cross-sectional and top views of intermediate products generated during the execution of exemplary embodiments of the method for manufacturing optoelectronic devices according to the present invention. The intermediate products include a first layer 3 and at least one of various electronic and optoelectronic components 9 embedded in the first layer 3.

[0482] According to Figure 16A, the sapphire flip-chip LED 9 is completely embedded in the first layer 3. Figure 16B shows a silicon-containing thin-film flip-chip LED 9, which is completely embedded in the first layer 3 with its light-emitting surface facing the first layer 3. The electrical contacts 18 of the sapphire flip-chip LED 9 and / or the thin-film flip-chip LED 9 can be made of a metal, such as gold.

[0483] Figure 16C shows an electronic chip 9 embedded in the first layer 3, such as an integrated circuit (IC), which may have one or more sensors, such as optical sensors, thermal sensors, or mechanical sensors. The electrical contacts 18 may be made of a metal such as aluminum.

[0484] In yet another embodiment, the electronic or optoelectronic component 9, as shown in Figure 16D, has at least one subassembly from among, for example, an LED, a μLED, a flip-chip LED, a thin-film flip-chip LED, an IC chip, a photosensor, a thermal sensor, and a mechanical sensor. The above component can be placed on a substrate 31 and covered with a encapsulant 32. The electrical contacts 18 of the subassembly 9 can be made of a metal such as gold, for example.

[0485] Figures 17A to 17C show cross-sectional views of exemplary embodiments of the optoelectronic device according to the present invention. The structured conductor layer 11 is disposed on the first surface 3.1, the upper surface 9.1, and the electrical contacts 18 by a so-called PICOS (Planar Interconnect On Substrate) process, as shown in Figure 17A. This PICOS process may include the following steps. In the first step, a seed layer, particularly a titanium-copper alloy, is applied to the upper surface 9.1 of at least one electronic or optoelectronic component 9, the electrical contacts 18, the upper surface 3.1 of the first layer 3, and the boundary region 19. A photoresist layer is applied to the seed layer and structured so that the area of ​​this seed layer is exposed. The exposed area of ​​the seed layer is galvanized to electrodeposit copper-titanium onto the exposed area of ​​the seed layer. The area of ​​the photoresist layer remaining after structuring and the underlying seed layer are removed.

[0486] The steps of galvanic plating the seed layer and applying the subsequent structured photoresist layer can be interchanged. Therefore, galvanic plating can be performed on a larger surface area, followed by structuring.

[0487] Using this procedure, the electronic or optoelectronic component 9 can be "framed" by the structured conductor layer 11. Thus, the PICOS process can be used to provide both mechanical stability and electrical interconnectivity for at least one electronic or optoelectronic component 9.

[0488] The structured conductive layer 11 can be placed on the first surface 3.1, the upper surface 9.1, and the electrical contacts 18 by a spraying process, as shown in Figure 17A. Thus, the silver nanotube ink or copper nanotube ink can be applied sequentially, in parallel, and locally to the upper surface 9.1, the electrical contacts 18, the upper surface 3.1 of the first layer 3, and the boundary region 19 of at least one electronic or optoelectronic component 9 to electrically interconnect the at least one electronic or optoelectronic component 9.

[0489] According to Figure 17C, the optoelectronic device 1, in addition to the embodiments described above, has dielectric layers 25 between the structured conductor layer 11 and the first layer 3, and between the structured conductor layer 11 and the upper surface 9.1 of the electronic or optoelectronic component 9. Such dielectric layers 25 can be advantageous because they can prevent short circuits between the structured conductor layer 11 and the first layer 3, and / or between the structured conductor layer 11 and the upper surface 9.1 of the electronic or optoelectronic component 9.

[0490] Figures 18A to 19C show cross-sectional views of exemplary embodiments of intermediate products of optoelectronic devices according to the present invention. Similar to Figures 16A to 16D, the intermediate product comprises a first layer 3 and electronic or optoelectronic components 9 embedded in the first layer 3. However, the step of arranging the structured conductor layer 11 on the first surface 3.1, the upper surface 9.1, and the electrical contacts 18 remains pending.

[0491] Figures 18A to 18C show three cross-sectional views in which the size of the gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 3.2 of the first layer 3 facing the shell surface 9.2 is different, becoming smaller from Figure 18A to Figure 18C. The shell surface 9.2 is preferably formed by the outer surface of the electronic or optoelectronic component 9, excluding the top surface 9.1 and the bottom surface 9.3 of the electronic or optoelectronic component 9 facing the top surface 9.1.

[0492] The gap has a conical cross-section, as shown in Figures 18A and 18B. In particular, the distance between the shell surface 9.2 and the side surface 3.2 is greater in the plane 20 extending over the upper surface 3.1 of the first layer 3 than in the plane extending over the bottom surface 3.1 of the electronic or optoelectronic component 9. The gap 21 preferably extends circumferentially around the electronic or optoelectronic component 9, surrounding the shell surface 9.2.

[0493] The gap 21 preferably has a width of 10 to less than 15 μm. In particular, the gap 21 has a width of 10 to less than 15 μm within the plane 20 that extends over the upper surface 3.1 of the first layer 3.

[0494] As shown in Figures 19A to 19C, the gap 21 is filled with filler 22, in particular with adhesive, and the amount of filler placed in the gap 21 changes from Figure 19A to Figure 19C.

[0495] According to Figure 19A, the filler material 22 is not present at all or is hardly present in the gap 21. However, in Figure 19B, the filler material is present between the bottom surface of the electronic or optoelectronic component 9 and the first layer 3, while the filler material 22 is not present at all or is hardly present in the gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 3.2 of the first layer.

[0496] As shown in Figure 19C, the filler material is placed between the bottom surface of the electronic or optoelectronic component 9 and the first layer 3, and between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 3.2 of the first layer 3. Furthermore, a deposit of the filler material 22 is placed above the gap 21, in particular on a plane 20 that extends over the upper surface 3.1 of the first layer 3.

[0497] Figures 20A to 20D show scanning electron microscope (SEM) images of exemplary embodiments of optoelectronic devices according to the present invention. The gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 3.2 of the first layer 3 facing the shell surface 9.2 is of varying size, becoming smaller from Figure 20A to Figure 20C. As can be seen from these figures, the gap 21 has a conical cross-section in which the distance between the shell surface 9.2 and the side surface 3.2, measured in a plane extending over the top surface 3.1 of the first layer 3, is greater than the distance in a plane extending over the bottom surface of the electronic or optoelectronic component 9.

[0498] Figure 20A shows a gap 21 where the distance between the shell surface 9.2 and the side surface 3.2, measured in a plane extending over the top surface 3.1 of the first layer, is too large, making it impossible to place the structured conductor layer on the top surface 3.1 of the first layer 3, the top surface 9.1 of the electronic or optoelectronic component 9, and the electrical contacts 18 of the electronic or optoelectronic component 9 with the help of the PICOS process.

[0499] The detailed views of each gap 21 shown in Figures 20B and 20E show gaps 21 having a width of 10 to 15 μm, in particular, a width of 12.77 μm. Thus, a PICOS process is possible in which a structured conductor layer is placed on the upper surface 3.1 of the first layer 3, the upper surface 9.1 of the electronic or optoelectronic component 9, and the electrical contacts 18 of the electronic or optoelectronic component 9.

[0500] Figure 20D shows a scanning electron microscope (SEM) image of a flip-chip LED 9 embedded in the first layer 3, where the gap 21 between the shell surface of the flip-chip LED 9 and the side surface of the first layer 3 opposite this shell surface differs in size.

[0501] Referring next to Figure 21A, a cross-sectional view of an intermediate product of an exemplary embodiment of the optoelectronic device 1 is shown. The optoelectronic device 1 has a carrier layer 7 and at least two layer segments 3.1, 3.2 arranged adjacent to each other on the carrier layer 7 at a predetermined distance d. Three optoelectronic components 9, in particular LEDs capable of emitting light of a selected color (in particular red, green, or blue), are arranged on each layer segment 3.1, 3.2 and are connected by a conductive layer segment 11. Thus, the three LEDs can form an RGB pixel. The predetermined distance d can be in the range of 0 to 1500 μm and can depend on the flow behavior of the materials of the adjacent layer segments 3.1, 3.2.

[0502] Layer segments 3.1 and 3.2 may contain or consist of materials such as polyvinyl butyral (PVB) or ethylene vinyl acetate (EVA). In particular, the layer segments may be foils of materials such as polyvinyl butyral (PVB) or ethylene vinyl acetate (EVA). Alternatively, layer segments 3.1 and 3.2 may contain or consist of other plastics, in particular preferably other resins having strong bonding properties, optical transparency, adhesion to many surfaces, toughness, and flexibility.

[0503] In the next step, as shown in Figure 21B, the two layer segments 3.1 and 3.2 are mechanically joined by at least partially melting the opposing edge regions 3.1.1 and 3.2.1 (see Figure 21A) of the adjacent layer segments 3.1 and 3.2, particularly using a laser or heating device (e.g., an autoclave or hot plate). Alternatively, the adjacent layer segments can be uniformly melted and mechanically joined to each other. This is preferably done by using a heating device (e.g., an autoclave or hot plate).

[0504] After a process of mechanically connecting adjacent layer segments 3.1 and 3.2, a nearly uniform and flat layer 3 is formed.

[0505] As shown in Figure 21C, the planarization layer 33 is positioned on layer segments 3.1 and 3.2. The planarization layer 33 may contain or consist of the same material as layer segments 3.1 and 3.2. In particular, the planarization layer 33 may be a foil of a material such as polyvinyl butyral (PVB) or ethylene vinyl acetate (EVA). The optoelectronic component 9 can be embedded in the planarization layer 33.

[0506] Referring to Figure 22, the optoelectronic device 1 has a carrier layer 7 and a plurality of layer segments 3.1, 3.2, ... arranged adjacent to each other on the carrier layer 7 at a predetermined distance d. Here, the number of layer segments is nine. The layer segments can be arranged on the carrier layer 7 in a regular matrix structure, and the predetermined distance d is the same for all distances between the opposing edges of adjacent layer segments. Thus, the layer segments are spaced apart by a predetermined distance d in each row of the matrix and by a predetermined distance d in each column of the matrix.

[0507] The optoelectronic device 1 further has a number of electrical bridge elements 34. These electrical bridge elements 34 extend between any two adjacent layer segments 3.1 and 3.2 and electrically interconnect the conductor layer segments 11 arranged on the layer segments 3.1 and 3.2. Here, the number of bridge elements 34 is 12.

[0508] In some embodiments, the electrical bridge element 34 has at least partially transparent and / or flexible tape. This tape may have at least one conductor path to interconnect the conductor layer segments 11 of two adjacent layer segments 3.1, 3.2. Such transparent and / or flexible tape having at least one conductor path can be provided, for example, with the help of an inkjet process.

[0509] In some embodiments, the electrical bridge element 34 is provided on a cover layer (not shown). The electrical bridge element may have the form of a conductor path. The cover layer is placed on the layer segments 3.1, 3.2, ... after the layer segments 3.1, 3.2, ... are placed on the carrier layer 7. The electrical bridge element on the cover layer then interconnects the conductor layer segments 11 of two adjacent layer segments 3.1, 3.2.

[0510] Layer segments 3.1, 3.2, ... are rectangular in shape, preferably with a length of at least about 125 mm and a width of at least about 70 mm.

[0511] The layer segments 3.1, 3.2, ... shown in Figure 23 are rectangular, and the length of each layer segment is at least approximately three times its width. In other words, the shape of the layer segments resembles stripes.

[0512] Layer segments 3.1 and 3.2 are arranged on the carrier layer 7 adjacent to each other in only one row at a predetermined distance d. The predetermined distance d is in the range of 0 to 1500 μm and depends in particular on the flow behavior of the materials of the adjacent layer segments 3.1 and 3.2.

[0513] The optoelectronic device 1 further comprises two electrical bridge elements 34. These two electrical bridge elements 34 extend between any two adjacent layer segments 3.1 and 3.2 and electrically interconnect the conductor layer segments 11 arranged on the layer segments 3.1 and 3.2.

[0514] The two electrical bridge elements 34 each connect all of the adjacent layer segments 3.1 and 3.2. The first electrical bridge element 34 connects the adjacent layer segments 3.1 and 3.2 in a first edge region, and the second electrical bridge element 34 connects the adjacent layer segments 3.1 and 3.2 in a second edge region. The first and second edge regions are located, in particular, at the two short edges of the layer segments.

[0515] By using two electrical bridge elements, current can be supplied to each layer segment. The layer segments can be connected to each other in parallel or in series.

[0516] Next, referring to Figures 24A to 24E, the method for manufacturing the optoelectronic device 1, for example, a transparent pane of a vehicle, is as follows: The steps include placing at least one optoelectronic component 9 on the upper surface 3.1 of the first layer 3, The process of providing the conductive layer 11.0 on the upper surface 3.1 and at least one optoelectronic component 9, A step of structuring a conductor layer 11.0, wherein the resulting structured conductor layer 11 includes an electrical conductor path for supplying electricity to at least one optoelectronic component 9 by the use of the structured conductor layer 11, Includes.

[0517] As shown in Figure 24A, a number of optoelectronic components 9 are arranged on the upper surface 3.1 of the first layer 3. In this case, there are three optoelectronic components.

[0518] The optoelectronic component has, in particular, electrical contacts 18 located on the upper surface 9.1 of the optoelectronic component 9. Specifically, all of the electrical contacts 18 (especially the contact pads) of the optoelectronic component 9 are located on the upper surface 9.1 of the optoelectronic component 9. The optoelectronic component 9 is positioned on the upper surface 3.1 of the first layer 3 such that the electrical contacts 18 face away from the upper surface 3.1 of the first layer 3. Therefore, the optoelectronic component 9 can be formed as a flip-chip LED, a thin-film flip-chip LED, or a flip-chip μLED.

[0519] In some embodiments, after the step of placing at least one optoelectronic component 9 on the upper surface 3.1 of the first layer 3, the position of the at least one optoelectronic component 9 can be detected, in particular using automated optical inspection (AOI). This ensures that the optoelectronic component 9, in particular at least one electrical contact 18 placed on the upper surface 3.1 of the optoelectronic component, is aligned with the structured conductor layer 11 in a later step. Alternatively, a placement process can be used that provides sufficient precision to ensure that the optoelectronic component 9, in particular at least one electrical contact 18 placed on the upper surface 9.1 of the optoelectronic component 9, is aligned with the structured conductor layer.

[0520] As shown in Figure 24B, the conductive layer 11.0 is provided on the top surface 3.1 and on the optoelectronic component 9. In particular, the step of providing the conductive layer 11.0 on the top surface 3.1 and on the optoelectronic component 9 includes the step of laminating the conductive layer 11.0 on the top surface 3.1 and on the optoelectronic component 9 using a lamination device. In particular, a heated roll laminator can be used to laminate the conductive layer 11.0 on the top surface 3.1 and on the optoelectronic component 9, especially in a roll-to-roll process.

[0521] The step of providing the conductive layer 11.0 on the upper surface 3.1 and on the optoelectronic component 9 further includes the step of embedding the optoelectronic component 9 at least partially in the first layer 3. The optoelectronic component 9 is pressed into the first layer 3, and the conductive layer 11.0 is simultaneously placed on the upper surface 3.1 of the first layer 3 and on the optoelectronic component 9. Preferably, the step of embedding at least one optoelectronic component 9 in the first layer 3 and the step of placing (in particular, laminating) the conductive layer 11.0 on the upper surface 3.1 of the first layer 3 and on the optoelectronic component 9 are performed simultaneously. This can be done, for example, by heating the optoelectronic component 9 and / or the first layer 3 to a suitable temperature and pressing the optoelectronic component 9 into the first layer 3 while the optoelectronic component 9 and / or the first layer 3 are at that suitable temperature.

[0522] The optoelectronic component 9 is embedded in the first layer 3 such that, in particular, its upper surface 9.1 is located within the plane defined by the upper surface 3.1 of the first layer 3 (see Figure 24B). Thus, the conductive layer 11.0 is located on a substantially flat surface formed by the upper surface 3.1 of the first layer 3 and the upper surface 9.1 of the optoelectronic component 9.

[0523] Subsequently, as shown in Figure 24C, a mechanical and electrical interconnection is provided between the conductor layer 11.0 and the electrical contacts 18 of the optoelectronic component 9. The process of mechanically and electrically interconnecting the conductor layer 11.0 with the electrical contacts 18 of the optoelectronic component 9 includes the step of regularly laser welding the conductor layer 11.0 to the electrical contacts 18 in the region above the electrical contacts 18. In particular, the regular laser welding of the conductor layer 11.0 and the electrical contacts 18 is performed only in the region above the electrical contacts 18 so as to provide a mechanical and electrical interconnection between the conductor layer and the electrical contacts of the optoelectronic component.

[0524] The conductor layer 11.0 can be structured such that the resulting structured conductor layer 11 includes an electrical conductor path for supplying electricity to at least one optoelectronic component 9 by the use of this structured conductor layer 11, as shown in Figure 24D.

[0525] In particular, the process of structuring the conductive layer 11.0 includes lithographic structuring of the conductive layer 11.0, especially photolithographic structuring of the conductive layer 11.0. By using a photomask (also called an optical mask), a geometric pattern of light is transferred to a photosensitive (especially photosensitive) chemical photoresist on the conductive layer 11.0. Light irradiation causes a chemical change in the photoresist, which allows for the removal of a portion of the photoresist with a special solution called a developer. Positive photoresist is a common type and becomes soluble in the developer when exposed. By using negative photoresist, the unexposed areas become soluble in the developer. Through a series of chemical processes, the exposure pattern can be etched onto the conductive layer 11.0.

[0526] Therefore, the first portion 11.1 of the conductor layer is positioned on the upper surface 3.1 of the first layer 3, and the second portion 11.2 of the conductor layer is positioned on the upper surface 9.1 of the optoelectronic component 9 and contacts the electrical contacts 18 of the optoelectronic component 9. In particular, the second portion 11.2 of the conductor layer is mechanically and electrically interconnected with the electrical contacts 18 of the optoelectronic component 9.

[0527] As shown in Figure 24E, the method further includes the step of arranging the planarization layer 33 on the first layer 3 and the structured conductor layer 11 such that the structured conductor layer 11 is embedded in the planarization layer 33.

[0528] Figures 25A to 25E show steps of another exemplary embodiment of the method for manufacturing the optoelectronic device 1. In contrast to the embodiments shown in Figures 24A to 24E, before providing the conductive layer 11 on the top surface 3.1 and on the optoelectronic component 9, a conductive adhesive or solder is provided on at least the electrical contacts 18 of the optoelectronic component in the form of electrical contact elements 11.5. In particular, the electrical contact elements 11.5 are placed only on the electrical contacts 18 and not on the top surface 3.1 of the first layer 3 or on the exposed areas of the top surface 9.1 of the optoelectronic component 9.

[0529] The process of providing the conductive layer 11 on the upper surface 3.1 and on the optoelectronic component 9, in particular the lamination process, includes the process of mechanically and electrically interconnecting the conductive layer 11.0 with the electrical contacts 18 of the optoelectronic component 9, as shown in Figure 25C. Therefore, the conductive layer 11.0 is heated to a temperature exceeding the melting / reaction temperature of the material of the electrical contact element 11.5. In particular, after cooling the electrical contact element 11.5, the conductive layer 11.0 is provided with mechanical and electrical interconnection with the electrical contacts 18 of the optoelectronic component 9.

[0530] The conductor layer 11.0 is structured as shown in Figure 25D, and the planar layer is placed on the first layer 3 and the structured conductor layer 11, as shown in Figure 25E, such that the structured conductor layer 11 is embedded in the planar layer 33.

[0531] Referring next to Figures 26A to 26E, the conductive layer 11.0 has a first conductive material layer 11.01 and a second conductive material layer 11.02, compared to the embodiments described above. The second conductive material layer 11.02 may include or consist of an adhesive, solder, or solder adhesive, in particular, which provides isotropic or anisotropic conductivity. Compared to Figure 25B, the second conductive material layer 11.02 is placed on the first conductive material layer 11.01 before providing the conductive layer 11.0 on the upper surface 3.1 and on the optoelectronic component 9. Thus, the second conductive material layer 11.02 is provided across the entire upper surface 3.1 region of the first layer 3, and not only between the electrical contacts 18 of the optoelectronic component 9 and the conductive layer 11.0.

[0532] The process of providing the conductive layer 11 on the upper surface 3.1 and on the optoelectronic component 9, in particular the lamination process, includes the step of mechanically and electrically interconnecting the conductive layer 11.0 with the electrical contacts 18 of the optoelectronic component 9, as shown in Figure 26C. Therefore, the conductive layer 11.0 is heated to a temperature exceeding the melting / reaction temperature of the second conductive material layer 11.02. In particular, after cooling the second conductive material layer 11.02, the conductive layer 11.0 is provided with mechanical and electrical interconnection between the conductive layer 11.0 and the electrical contacts 18 of the electronic component 9.

[0533] Figures 27A to 27E show steps of another exemplary embodiment of the method for manufacturing the optoelectronic device 1. In contrast to the embodiments shown in Figures 24A to 24E, the conductive layer 11.0 comprises or consists of a photostructureable nanoparticle paste containing conductive nanoparticles, such as silver and / or gold and / or copper nanoparticles.

[0534] The conductive layer 11.0 is structured as shown in Figure 27C, and the mechanical and electrical interconnections between the conductive layer 11.0 and the electrical contacts 18 of the optoelectronic component 9 are provided by sintering the conductive layer 11.0, in particular, a photostructureable nanoparticle paste, as shown in Figure 27D. The sintering process may include an oven process, provided that the first layer 3 and the optoelectronic component 9 can withstand a temperature of at least about 140°C. Alternatively, the sintering process may include a photonic curing process.

[0535] As shown in Figure 27E, the planarization layer is positioned on the first layer 3 and the structured conductor layer 11 such that the structured conductor layer 11 is embedded in the planarization layer 33.

[0536] Figures 28A to 28E show the steps of another exemplary embodiment of the method for manufacturing the optoelectronic device 1. Compared to the above embodiment, the optoelectronic component 9 is not embedded in the first layer 3, but is located on the upper surface 3.1 of the first layer 3.

[0537] In the intermediate step between Figure 28A and Figure 28B, a flat conductive layer 11.0 is provided on the upper surface 9.1 of the optoelectronic component. Subsequently, Figure 28B shows the step of deep drawing the conductive layer 11.0 so that the optoelectronic component 9 and the upper surface 3.1 of the first layer 3 are covered by the conductive layer 11.0.

[0538] The conductor layer 11.0 is structured such that, as shown in Figure 28C, a first portion 11.1 of the conductor layer is positioned on the upper surface 3.1 of the first layer 3, a second portion 11.2 of the conductor layer is positioned on the upper surface 9.1 of the optoelectronic component 9, and an intermediate portion 11.3 of the conductor layer is positioned on the side surface 9.2 of the optoelectronic component 9. The intermediate portion 11.3 of the conductor layer interconnects the first portion 11.1 and the second portion 11.2 of the conductor layer.

[0539] As shown in Figure 28D, mechanical and electrical interconnections between the conductor layer 11.0 and the electrical contacts 18 of the optoelectronic component 9 are provided by sintering the conductor layer 11.0, in particular, a photostructureable nanoparticle paste. Furthermore, as shown in Figure 28E, a planarization layer is placed on the first layer 3 and the structured conductor layer 11, such that the structured conductor layer 11 and the optoelectronic component are embedded in the planarization layer 33.

[0540] As shown in Figure 29A, the conductor layer is provided on the upper surface 3.1 of the first layer 3, which is structured such that the resulting structured conductor layer 11 includes an electrical conductor path suitable for supplying electricity to at least one optoelectronic component.

[0541] To electrically connect the contacts of at least one optoelectronic component to the structured conductor layer, an electrical contact element 11.5 is provided on the structured conductor layer 11, as shown in Figure 29B. The electrical contact element 11.5 is provided on the structured conductor layer 11, as shown in Figure 29C, such that the contact element is aligned to the contacts of at least one optoelectronic component located on the structured conductor layer, in particular on the electrical contact element. Specifically, the contact element 11.5 is provided at a defined location on the structured conductor layer 11. This location is defined such that the contact element 11.5 is aligned to the electrical contacts 18 of the optoelectronic component 9.

[0542] Each optoelectronic component 9 can be, for example, a flip chip having two electrical contacts 18 at defined positions on its bottom surface. The contact elements 18 for such a flip chip are arranged on the structured conductive layer 11 such that each contact 18 of the flip chip 9 contacts one contact element 11.5.

[0543] The contact elements 11.5 are provided by applying solder paste onto the structured conductor layer 11, and are also heated using photonic soldering to mechanically and electrically interconnect the conductor layer 11 with the electrical contacts 18 of the optoelectronic component 9, as shown in Figure 29D.

[0544] As shown in Figure 29E, the planarization layer is positioned on the first layer 3 and the structured conductor layer 11 such that the structured conductor layer 11, the electrical contact elements 11.5, and the optoelectronic components 9 are embedded in the planarization layer 33.

[0545] In some embodiments of the present invention, a photoelectronic device that is at least partially flexible has a reinforcing material to stabilize at least the connection area of ​​the photoelectronic device and enable a reliable electrical interconnection between the photoelectronic device and the environment.

[0546] Next, referring to Figures 30A to 30D, the process of providing a method for manufacturing an optoelectronic device 1, for example, a vehicle, which is at least partially transparent, is as follows: A step of providing a carrier substrate 35 and a release layer 36 disposed on the carrier substrate 35, A step of providing a structured conductive layer 11 on the opposite side of the carrier substrate 35 on the release layer 36, The process involves placing at least one optoelectronic component 9 on the structured conductor layer 11, The structured conductor layer 11 has an electrical conductor path for supplying electricity to at least one optoelectronic component 9. The process involves providing the first layer 3 on the release layer 36 (see Figure 30B), The first layer 3 covers the conductive layer 11 and the at least one optoelectronic component 9 such that at least one optoelectronic component 9 is at least partially embedded in the first layer 3. A step to remove the carrier substrate 35 and the release layer 36 (see Figure 30C), Includes.

[0547] As shown in Figure 30A, the structured conductor layer 11 is placed on the upper surface 36.1 of the release layer 36, and a number of optoelectronic components 9 are placed on the upper surface 36.1 of the structured conductor layer and / or the release layer. In this case, there are three optoelectronic components 9.

[0548] In some embodiments, the step of providing a structured conductive layer on a release layer may include the step of growing a conductive material layer (e.g., copper) on the release layer.

[0549] As shown in Figure 30B, the first layer 3 is then provided on the release layer 36 such that the first layer 3 covers the conductor layer 11 and the optoelectronic component 9. In particular, the optoelectronic component 9 and the structured conductor layer are embedded in the first layer 3 such that the upper surface 11.1 of the structured conductor layer and / or the upper surface 9.1 of the optoelectronic component 9 are positioned within the plane defined by the upper surface 3.1 of the first layer 3.

[0550] Subsequently, as shown in Figure 30C, the carrier substrate 35 and the release layer 36 are removed by dissolving the release layer 36 using either temperature, laser light, or a chemical dissolution process. Thus, the optoelectronic device can be easily and non-destructively removed from the carrier substrate. Therefore, the release layer 36 may contain or consist of a soluble material such as silicon nitride (SiN).

[0551] As shown in Figure 30D, the method may further include the step of providing a planarization layer 33 on the first layer 3 and / or structured conductor layer 11 and / or optoelectronic component 9 after removing the carrier substrate 35 and the release layer 36. Thus, the structured conductor layer 11 and / or optoelectronic component 9 can be placed between the first layer 3 and the planarization layer 33. Thus, the structured conductor layer 11 can be placed within the neutral fiber of the laminate of the first layer 3, the structured conductor layer 11, and the planarization layer 33.

[0552] Figures 31A to 31E show steps of another exemplary embodiment of the method for manufacturing the optoelectronic device 1. In addition to the embodiments shown in Figures 30A to 30D, the method further includes the step of providing at least one reinforcing material 37 on the release layer 36 and / or the structured conductor layer 11, as shown in Figure 31B. The step of providing at least one reinforcing material 37 on the release layer 36 and / or the structured conductor layer 11 is performed not only before the step of removing the release layer 36 and the temporary carrier substrate 35 (see Figure 31D), but also before the step of providing the first layer 3 (see Figure 31C). The reinforcing material can preferably function as a stabilizer for at least the connection area of ​​the optoelectronic device to enable reliable electrical interconnection between the optoelectronic device and the environment.

[0553] Optoelectronic devices can be made of, for example, flexible materials, and rigid reinforcing materials can be placed in the edge regions of the optoelectronic devices to stabilize and reinforce at least the edge regions of the optoelectronic devices. The edge regions and, in particular, the reinforcing materials can be used as connection regions of the optoelectronic devices to enable reliable electrical interconnection between the optoelectronic device and the environment and / or at least one adjacent second optoelectronic device.

[0554] The reinforcing material is provided, in particular, to the edge region of the delamination layer 36, which includes the edge 36.2 of the delamination layer.

[0555] As shown in Figures 31B to 31E, the reinforcing material 37 covers the structured conductor layer 11 at least partially, preferably covering the structured conductor layer 11 in its edge region, and the edge region of the structured conductor layer 11 includes the edge 11.4 of the structured conductor layer 11. The edge region of the structured conductor layer 11 can at least partially coincide with the edge region of the release layer 36.

[0556] According to these figures, the outer edge 37.1 of the reinforcing member 37 is aligned with the edge 36.2 of the delamination layer 36. Thus, at least one side of the reinforcing member and one side of the delamination layer are located in the same plane.

[0557] As shown in Figure 31C, the first layer 3 is then provided on the release layer 36 so that the first layer 3 covers the conductor layer 11, the optoelectronic component 9, and the reinforcing material 37. In particular, the optoelectronic component 9 and the structured conductor layer are embedded in the first layer 3 so that the upper surface 11.1 of the structured conductor layer is positioned within the plane defined by the upper surface 3.1 of the first layer 3. However, the reinforcing material 37 is partially embedded in the first layer 3 so that the reinforcing material 37 protrudes from the first layer, particularly from the side surface 3.2 of the first layer.

[0558] Therefore, the first layer 3 does not completely cover the edge region of the delamination layer 36, and thus the first layer 3 is distal to the edge 36.2 of the delamination layer 36.

[0559] As shown in Figure 31E, the method may further include the step of providing a planar layer 33 on the first layer 3 and / or structured conductor layer 11 and / or optoelectronic component 9 and / or reinforcing material 37 after removing the carrier substrate 35 and the release layer 36. In some embodiments, the planar layer 33 may be the same size as the first layer 3, as shown on the left side of Figure 31E, or in some embodiments, it may be larger than the first layer 3, as shown on the right side of Figure 31E. In particular, the edge 33.1 of the planar layer 33 may be aligned with the outer edge 37.1 of the reinforcing material 37 in some embodiments.

[0560] Referring next to Figures 32A to 32D, this method may further include the step of modifying the shape of the intermediate product 38 (see Figure 32C) before providing the first layer 3 onto the release layer 36 (see Figure 32D). The intermediate product 38 includes a carrier substrate 35 and a release layer 36, a structured conductor layer 11 on the release layer 36, an optoelectronic component 9 on the structured conductor layer 11, and optionally, at least one reinforcing material 37 on the release layer 36. The intermediate product 38 can preferably be obtained by the steps of providing a carrier substrate 35 and a release layer 36 disposed on the carrier substrate 35, providing a structured conductor layer 11 on the release layer 36, arranging an optoelectronic component 9 on the structured conductor layer 11, and providing at least one reinforcing material 37 on the release layer 36 and / or the structured conductor layer 11. The modified shape of the intermediate product 38 may have at least one curved surface, in particular the curved upper surface 3.1 of the first layer 3, as shown in Figures 32C and 32D.

[0561] After the step of changing the shape of the intermediate product 38, the first layer 3 is provided on the conductor layer 11 and the optoelectronic component 9, as shown in Figure 32D. The step of changing the shape of the intermediate molded product 38 can be performed, for example, by using a mold and pressing the intermediate product 38 into the mold. Subsequently, the first layer 3 can be provided on the conductor layer 11 and the optoelectronic component 9 by, for example, molding the first layer 3 onto the conductor layer 11 and the optoelectronic component 9. Thus, the first layer 3 may contain or consist of a mechanically robust material such as a mold compound, silicon, or a transparent or diffusion-filled resin.

[0562] As shown in Figure 32D, the first layer may have a curved upper surface 3.1 (see Figure 32D on the left) and a curved surface opposite to the upper surface 3.1 (see Figure 32D on the right).

[0563] Next, referring to Figures 33A to 33C, the first layer 3 can be provided on the conductor layer 11 and the optoelectronic component 9 by forming the first layer 3 on the conductor layer 11 and the optoelectronic component 9 without changing the shape of the intermediate product 38 (see Figure 33C). This allows the top surface 3.1 and the structured conductor layer 11 to form a substantially flat surface.

[0564] In a further step, the optoelectronic device 1 can be placed on a curved surface and fixed to that curved surface, in particular, by bonding. In a preferred embodiment, the curved surface of the intermediate product 38 and / or the curved surface of the optoelectronic device 1 can coincide with the curved surface on which the optoelectronic device 1 is to be placed.

[0565] Next, referring to Figure 34, a method for manufacturing an optoelectronic device is shown. In the first step, a layer stack is provided, in particular an initial layer stack 39.0 having an unstructured top layer 39.0.1. Then, this unstructured top layer 39.0.1 is structured, for example, by using laser light. For example, by partially ablating the top layer 39.1, an opening 40 is obtained on the top surface 39.1.1 of this top layer. The opening 40 has the form of a cavity, with its bottom surface 40.1 and side surface 40.2 formed by the top layer 39.1.

[0566] The opening 40 is filled with a filler 22, in particular an adhesive, and an electronic or optoelectronic component 9 is placed within the opening 40 on the bottom surface 40.1 of the opening 40. The electrical contacts 18 of the electronic or optoelectronic component 9 are located on the top surface 9.1 of the component 9 and therefore face away from the layer stack 39. By placing the electronic or optoelectronic component 9 within the opening 40, a boundary region, in particular a gap 21, is formed between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 40.2 of the opening. By pressing the electronic or optoelectronic component 9 into the opening 40, and therefore into the filler 22, the gap 21 is filled with the filler 22, and an accumulation of the filler 22 is generated on the filled gap 21, in particular on a plane that extends over the top surface 39.1.1 of the uppermost layer 39.1.

[0567] The filler material can be placed between the uppermost layer 39.1 and the bottom surface of the electronic or optoelectronic component 9. The bottom surface of the electronic or optoelectronic component 9 is on the opposite side from the upper surface 9.1 of the electronic or optoelectronic component 9.

[0568] The filler 22 may, in particular, include or consist of an adhesive that, after curing, fixes the electronic or optoelectronic component 9 within the opening 40.

[0569] In some embodiments, the filler material 22 can form a fillet weld between the upper surface 39.1.1 of the uppermost layer 39.1 and the shell surface 9.2 of the electronic or optoelectronic component 9. In particular, the filler material 22 can be partially placed within the gap 21, thereby partially forming a fillet weld between the upper surface 39.1.1 of the uppermost layer 39.1 and the shell surface 9.2 of the electronic or optoelectronic component 9.

[0570] An electrical conductor arrangement, in particular a structured conductor layer 11, is arranged on the upper surface 39.1.1 of the uppermost layer 39.1 and on the upper surface 9.1 of the electronic or optoelectronic component 9, and is in contact with the electrical contacts 18 of the electronic or optoelectronic component 9. The electrical conductor arrangement extends beyond the boundary region, in particular the gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 40.2 of the opening 40, and thus fills the gap 21.

[0571] Therefore, the first portion 11.1 of the electrical conductor arrangement 11 is positioned on the upper surface 39.1.1 of the uppermost layer 39.1, and the second portion 11.2 of the electrical conductor arrangement 11 is positioned on the upper surface 9.1 of the electronic or optoelectronic component 9 and is in contact with the electrical contacts 18 of the electronic or optoelectronic component 9. The electrical contacts 18 can be formed in particular by contact pads and can be positioned on the upper surface 9.1 of the electronic or optoelectronic component 9.

[0572] The intermediate portion 11.3 of the electrical conductor arrangement 11 extends beyond the boundary region and interconnects the first portion 11.1 and the second portion 11.2 of the electrical conductor arrangement 11. The intermediate portion 11.3 extending beyond the boundary region is placed on the filler material 22.

[0573] The electronic or optoelectronic component 9 may include or consist of at least one of the following: a light-emitting diode (LED), particularly a flip-chip LED, an integrated circuit (IC), a photodiode, or a sensor, particularly an infrared sensor. In the illustrated example, component 9 is a flip-chip LED. All of the electrical contacts 18 of the flip-chip LED 9 are located on the top surface 9.1 of the chip 9. Electricity can be supplied to the electronic or optoelectronic component 9 by arranging the electrical conductor arrangement 11 on the top surface 39.1.1 of the uppermost layer 39.1 and on the electrical contacts 18 of the electronic or optoelectronic component 9.

[0574] In some embodiments, the process of arranging the first, second, and intermediate portions of the electrical conductor arrangement includes a so-called PICOS (Planar Interconnect On Substrate) process. This PICOS process may include, for example, the following steps: Applying a seed layer, particularly a titanium-copper alloy, to the upper surface 9.1 and / or the upper surface 39.1.1 of at least one electronic or optoelectronic component 9 and / or the boundary region, particularly the gap 21, and therefore onto the filler 22. Next, a photoresist layer is applied to the seed layer and the photoresist layer is structured so that the area of ​​the seed layer is exposed. The exposed area of ​​the seed layer is galvanized to electrodeposit copper-titanium onto this exposed area of ​​the seed layer. The area of ​​the photoresist layer remaining after structuring and the underlying seed layer are removed. Alternatively, the step of galvanizing the seed layer and the step of applying the next structuring photoresist layer can be interchanged. Therefore, galvanizing can be performed on a larger surface, followed by structuring. Furthermore, the galvanic plating process may also include an electroplating process. In at least some embodiments, a spray or printing process can be used instead of the galvanic plating process.

[0575] Through this procedure, the electronic or optoelectronic component 9 can be "framed" by the electrical conductor arrangement 11, so that the PICOS process can be used to ensure both the mechanical stability and electrical interconnectivity of at least one electronic or optoelectronic component 9.

[0576] As shown in Figure 35, the layer stack 39 has an uppermost layer 39.1 and a lowermost layer 39.2. The lowermost layer 39.2 is positioned below the uppermost layer 39.1. As described in Figure 34, an initial layer stack 39.0 can be provided having an unstructured uppermost layer 39.0.1, and the uppermost layer 39.0.1 can be structured to obtain at least one opening 40 on the upper surface 39.1.1 of the uppermost layer 39.1.

[0577] In some embodiments, a layer stack 39 can be provided that already has at least one opening 40. For example, before providing the layer stack 39, at least one opening 40 can be created by drilling or mechanically opening through holes in the top layer 39.1.

[0578] Subsequently, the filler 22 is filled into the opening 40 by, for example, a process of distributing, spraying, printing, atomizing, and / or stamping the filler 22.

[0579] The electronic or optoelectronic component 9 is placed within the opening and pressed into the filler material 22, so that the bottom layer 39.2 supports the electronic or optoelectronic component 9. By placing the electronic or optoelectronic component 9 within the opening 40, a boundary region, in particular a gap 21, is formed between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 40.2 of the opening 40, and this gap 21 is filled with the filler material 22.

[0580] As shown in both Figures 34 and 35, the electronic or optoelectronic component 9 is partially positioned within the opening 40 such that the top surface 9.1 of the electronic or optoelectronic component 9 protrudes from the top surface 39.1.1 of the uppermost layer 39.1, in particular by a height H. The height H is preferably less than or equal to half the thickness t of the electronic or optoelectronic component 9. Thus, the electronic or optoelectronic component 9 can be partially positioned within the opening 40 such that less than or equal to half the thickness t of the electronic or optoelectronic component 9 protrudes from the top surface 39.1.1 of the uppermost layer 39.1.

[0581] In some embodiments, at least one electronic or optoelectronic component 9 can be completely positioned within the opening 40. The top surface 9.1 of the electronic or optoelectronic component 9 can be positioned within a reference plane extending to the top surface 39.1.1 of the uppermost layer 39.1. In other words, the top surface 9.1 of the electronic or optoelectronic component 9 and the top surface 39.1.1 of the uppermost layer 39.1 are positioned in the same plane and form a flat surface.

[0582] As described in the embodiment of Figure 34, the electrical conductor arrangement, in particular the structured conductor layer 11, is positioned on the upper surface 39.1.1 of the uppermost layer 39.1 and on the uppermost surface 9.1 of the electronic or optoelectronic component 9. It is in contact with the electrical contacts 18 of the electronic or optoelectronic component 9. The electrical conductor arrangement extends beyond the boundary region. Thus, it fills the gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 40.2 of the opening 40.

[0583] Referring next to Figure 36, the layer stack 39 has an uppermost layer 39.1 and a lowermost layer 39.2. The lowermost layer 39.2 preferably contains or consists of a material such as PVB or EVA.

[0584] In comparison with Figure 35 above, no filler material is used to secure the electronic or optoelectronic component 9 within the opening 40. Instead, at least the bottom layer 39.2 is temporarily heated, and the electronic or optoelectronic component 9 is positioned within the opening and pressed into the bottom layer 39.2, particularly simultaneously. The boundary region, particularly the gap 21, located between the top surface 9.1 of the electronic or optoelectronic component 9 and the adjacent top surface 39.1.1 of the top layer 39.1 is filled by pressing the electronic or optoelectronic component 9 into the temporarily heated bottom layer 39.2 because the material of the bottom layer 39.2 flows into the boundary region.

[0585] An electrical conductor arrangement, particularly a structured conductor layer 11, is arranged on the upper surface 39.1.1 of the uppermost layer 39.1 and on the upper surface 9.1 of the electronic or optoelectronic component 9, and is in contact with the electrical contacts 18 of the electronic or optoelectronic component 9. The electrical conductor arrangement extends beyond the hardened boundary region.

[0586] As shown in Figure 37, there is an initial layer stack 39.0 having an unstructured uppermost layer 39.0.1 and a lowermost layer 39.2, where the unstructured uppermost layer 39.0.1 contains or consists of a photoresist, in particular a photostructureable resist. The unstructured uppermost layer 39.0.1 is structured, for example, using lithography structuring (see arrow in Figure 37) to obtain at least one opening 40 on the top surface 39.1.1 of the uppermost layer 39.1.

[0587] After obtaining at least one opening 40 on the upper surface 39.1.1 of the uppermost layer 39.1, the process steps shown in Figure 35 are carried out according to the corresponding description.

[0588] Next, referring to Figure 38A, a top view and a cross-sectional view of a photoelectronic device using the latest technology are shown. The photoelectronic device has a transparent substrate with four pixels, and each pixel has a light-emitting element placed within the transparent substrate. The light emitted from the photoelectron light source illuminates each pixel such that, when viewed from above, the brighter point of light is located in the center of the pixel, and the less bright light fills the rest of the pixel area.

[0589] Figure 38B shows a top view and a cross-sectional view of the optoelectronic device 1 according to the present invention. The optoelectronic device has a layer stack 39 having a plurality of pixels 90. The plurality of pixels 90 are illustrated by four pixels in Figure 38B. Each of the plurality of pixels has at least one photoelectron light source 9 and a first pixel region 90.1 on the top surface 39.3 of the layer stack 39. Light from the photoelectron light source 9 illuminates each pixel region such that, when viewed from above, the entire pixel region is uniformly illuminated by scattered light and defined and / or sharp edges are generated in the first pixel region. Thus, in some embodiments, the optoelectronic device 1 may have, for example, a light scattering arrangement or a structured light scattering arrangement for scattering light from the photoelectron light source 9 to uniformly illuminate the entire pixel region 90.1. In some embodiments, the optoelectronic device 1 may have a light guide layer and / or a reflective layer for guiding or reflecting light from the photoelectron light source 9 to uniformly illuminate the pixel region 90.1.

[0590] The pixel region 90.1 is defined by the light-emitting region of each pixel and can have a rectangular, square, circular, elliptical, or any other arbitrary outer contour. The shape and size of each pixel region can differ from pixel to pixel. Figure 38B illustrates a square pixel region 90.1.

[0591] Figure 39 is a cross-sectional view of a photoelectronic device using the latest technology. The photoelectronic device includes a photoelectron light source 9 embedded in a transparent substrate, a first reflective layer 42 positioned on the upper surface of the photoelectron light source 9, a second reflective layer 43 positioned below the photoelectron light source 9, and a light scattering layer 41 positioned on the upper surface of the transparent substrate. The scattering layer 41 can be configured to scatter light from the photoelectron light source 9, thereby providing illumination of the photoelectronic device as shown in Figure 38A. Thus, when viewed from above, the light from a brighter point is located in the center of the photoelectronic device, and the light from a less bright point fills the rest of the photoelectronic device.

[0592] In some embodiments, uniform illumination of pixels in an optoelectronic device can be achieved by modifying the scattering layer.

[0593] The optoelectronic device shown in Figure 40 has a layer stack having a plurality of pixels 90. Exemplarily, only one of the plurality of pixels is shown in Figure 40. This pixel has a photoelectron light source 9 embedded in the first layer 3 of the layer stack 39. According to this embodiment, the first layer 3 is the only layer of the layer stack, although the layer stack may have further layers. A first reflective layer 42 is located on the upper surface 9.1 of the photoelectron light source, and a second reflective layer 43 is located on the lower surface 9.3 of the photoelectron light source. The upper surface 9.1 faces the upper surface 39.3 of the layer stack 39, and the lower surface 9.3 faces away from the upper surface 39.3. The first and second reflective layers can guide the light from the photoelectron light source in a suitable manner. As shown in the figure, the light emitted from the photoelectron light source is guided so that the photoelectron light source emits light radially from its sides.

[0594] The pixel further comprises a first pixel region 90.1 on the upper surface 39.3 of the layer stack, and a structured light scattering arrangement 44 for scattering light from the photoelectron light source 9 to uniformly illuminate the first pixel region 90.1.

[0595] The first pixel region 90.1 has a central axis 45 which is perpendicular to the first pixel region 90.1 and passes through the center of the first pixel region. The central axis 45 extends in a direction orthogonal to the first layer 3 of the layer stack 39.

[0596] The structured light scattering arrangement 44 is positioned on top of the first layer 3 in the layer stack 39, as shown in the figure, but it can also be at least partially embedded in the first layer. When viewed from above, the structured light scattering arrangement 44 can cover at least about 1-50% of the size of the pixel region 90.1, and in particular, at least about 1-20% of the size of the pixel region 90.1.

[0597] To scatter light from the photoelectron light source 9, the structured light scattering arrangement 44 may have light scattering particles and / or a rough outer surface, in particular a rough outer surface facing the pixel region 90.1. However, the outer surface of the first layer, in particular the top and bottom surfaces of the first layer, may include a smooth, low-scattering surface.

[0598] Figures 41A to 41C show top views of one embodiment of the optoelectronic device, respectively. The structured light scattering arrangement 44 can include a plurality of light scattering elements. As shown in Figures 41A and 41B, the structured light scattering arrangement 44 has a first light scattering element 44.1, a second light scattering element 44.2, and a third light scattering element 44.3. The third light scattering element 44.3 and the second light scattering element 44.2 are radially located further from the photoelectron light source 9 than the first light scattering element 44.1, and the third light scattering element 44.3 is radially located further from the photoelectron light source 9 than the second light scattering element 44.2. Thus, "in a radial direction" means a direction perpendicular to the central axis 45 of the first pixel region 90.1.

[0599] The number of light scattering elements can be more than 3, more than 10, or more than 50, as shown in Figure 41C. The structured light scattering arrangement 44 includes, for example, more than 100 or 1000 light scattering elements.

[0600] Each of the light scattering elements 44.1, 44.2, and 44.3 may have a defined geometric form, which is preferably the same for all light scattering elements. Preferably, each light scattering element has a defined particle concentration of scattering particles within the range of its defined geometric form.

[0601] As shown in Figures 41A and 41B, the light scattering elements 44.1, 44.2, and 44.3 form a ring-shaped structure around the photoelectron light source 9. According to Figure 41A, the ring-shaped structure has a circular shape when viewed from above, and according to Figure 41B, the ring-shaped structure has a square shape. However, this structure can also have a rectangular or polygonal shape.

[0602] Furthermore, the ring-shaped structure has a rectangular shape in a cross-sectional plane containing the central axis 45 of the first pixel region 90.1. The central axis 45 is perpendicular to the first pixel region 90.1 and passes through the center of the first pixel region 90.1. However, the ring-shaped structure may have a circular, square, or polygonal shape in a cross-sectional plane containing the central axis 45.

[0603] As shown in Figure 41C, the light scattering elements can form scattering points distributed within a region extending across the entire length and width of the pixel area. As shown in Figure 41C, the density of scattering points distributed within the region extending across the entire length and width of the pixel area is higher in the radial direction further away from the photoelectron light source 9 than in the radial direction closer to the photoelectron light source 9. Therefore, uniform illumination of the entire pixel area can be achieved.

[0604] Referring now to Figure 42, the layer stack 39 has a second layer 46 and a third layer 47. The first layer 3 is located between the second layer 46 and the third layer 47, and the structured light scattering arrangement 44 is located on top of the second layer 46 in the layer stack 39, as shown in the figure, but can also be at least partially embedded in the second layer.

[0605] The photoelectron light source 9, the first reflective layer 42, and the second reflective layer 43 form a photoelectron subassembly 9.0. The photoelectron subassembly 9.0 is embedded in the first layer 3 such that its upper surface 9.0.1 is in the same plane as the upper surface 3.1 of the first layer 3, and its bottom surface 9.0.2 is in the same plane as the bottom surface 3.3 of the first layer 3. Therefore, the photoelectron subassembly 9.0 can have at least approximately the same height as the first layer 3.

[0606] Referring next to Figure 43, the layer stack 39 has a further structured light scattering arrangement 44. The further structured light scattering arrangement 44 is located within the layer stack 39, preferably below the first layer 3, between the second pixel region 90.2 and the photoelectron light source 9. More specifically, the further structured light scattering arrangement 44 is located on the third layer 47, opposite to the first layer 3, but may also be at least partially embedded in the third layer.

[0607] The structured light scattering arrangement 44 located on the second layer 46 is configured to scatter light from the photoelectron light source 9 so that the first pixel region 90.1 is uniformly illuminated by scattered light. The structured light scattering arrangement 44 located on the third layer 47 on the opposite side from the first layer 3 is configured to scatter light from the photoelectron light source 9 so that the second pixel region 90.2 is uniformly illuminated by scattered light.

[0608] In contrast to Figure 42, the structured light scattering arrangement 44 can be embedded in the first layer 3, in particular, completely embedded, as shown in Figure 44. The structured light scattering arrangement 44 has first, second, and third light scattering elements 44.1, 44.2, and 44.3 having at least substantially the same rectangular shape and size in a cross-sectional plane including the central axis 45 of the first pixel region 90.1.

[0609] To improve uniform illumination of the entire first pixel region...

Claims

1. Optoelectronic devices, It has multiple photoelectron light sources arranged on a first layer, The first layer comprises or consists of at least partially transparent material. Each of the plurality of photoelectron light sources has an individual photoconverter that converts light emitted from a corresponding light source and emits converted light. The photoconverter of each photoelectron light source is arranged on the first layer and / or the corresponding photoelectron light source, Each of the aforementioned photoelectron light sources is a small LED with an edge length of less than 200 μm. One of the aforementioned photoconverters is precisely assigned to one photoelectron light source. Optoelectronic devices.

2. The optical converters for different light sources are isolated from each other. The optoelectronic device according to claim 1.

3. The photoelectron light source is distributed over a first surface region of the first layer, The first surface region is larger than the sum of the cross-sectional areas of the photoelectron light source. The optoelectronic device according to claim 1.

4. Each optical converter contains conversion particles with a diameter of at least approximately 1 μm to 30 μm. The optoelectronic device according to claim 1.

5. Each photoconverter has the form of a droplet covering the corresponding photoelectron light source, The optoelectronic device according to claim 1.

6. Each optical converter is positioned between the first layer and the corresponding photoelectron light source. The optoelectronic device according to claim 1.

7. Each optical converter has an adhesive configured to fix the corresponding photoelectron light source to the first layer. The optoelectronic device according to claim 6.

8. Each optical converter is positioned on the first layer on the opposite side from the corresponding photoelectron light source and facing the light-emitting surface of the corresponding photoelectron light source. The optoelectronic device according to claim 1.

9. A light shield extends circumferentially around each optical transducer. The optoelectronic device according to claim 1.

10. Each optical converter is formed as a platelet placed on the first layer and faces the light-emitting surface of the corresponding photoelectron light source. The optoelectronic device according to claim 1.

11. Each platelet contains transformation particles placed within the matrix material. The optoelectronic device according to claim 10.

12. Each optical converter is embedded in the first layer, The optoelectronic device according to claim 1.

13. The aforementioned optoelectronic device further comprises a set of light sources that do not have a photoconverter. The optoelectronic device according to claim 1.

14. The optical converter includes at least a first set of optical converters and a second set of optical converters, wherein the second set of optical converters is configured to convert light to a different wavelength than that of the first set of optical converters. The optoelectronic device according to claim 1.

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