Semiconductor equipment

Abstract

To provide a semiconductor device with a novel structure.SOLUTION: A semiconductor device has a current voltage conversion unit, a current switching unit, a voltage current conversion unit, and a control unit. The current switching unit has a first transistor. The voltage current conversion unit has a second transistor. The control unit has a third transistor. The first transistor has an oxide semiconductor in a channel formation region. The second transistor has a nitride semiconductor in a channel formation region. The third transistor has silicon in a channel formation region. The first transistor is provided on a first substrate. The second transistor and the third transistor are provided at a second substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a semiconductor device.

[0002] One aspect of the present invention is not limited to the above-mentioned technical field. The technical field relates to a product, a method, or a method of manufacture. Or, one aspect of the present invention. This refers to a process, machine, manufacture, or composition. This concerns (the tar).

[0003] In this specification, a semiconductor device refers to a device that can function by utilizing semiconductor properties. This refers to the whole. Therefore, it includes semiconductor elements such as transistors and diodes, and semiconductor elements. The circuit is a semiconductor device. It is also used in display devices, light-emitting devices, illumination devices, electro-optical devices, and imaging devices. Devices, communication devices, and electronic equipment may include semiconductor elements and semiconductor circuits. Display devices, light-emitting devices, illumination devices, electro-optical devices, imaging devices, communication devices, and electronic devices. These are sometimes also called semiconductor devices. [Background technology]

[0004] High-mobility switching devices, such as those made of gallium nitride, are used for high-speed operation. The transistors used are nitrides of group 13 elements such as gallium nitride (GaN). A transistor having a channel formation region (hereinafter referred to as a GaN transistor) is a deprecated transistor. It operates in normal mode (normally on).

[0005] GaN transistors are transistors that contain different semiconductor materials in order to achieve higher performance. For example, a transistor having silicon (Si) in the channel formation region (Si transistor) A configuration that combines the above is desirable. For example, Patent Document 1 describes the depletion mode GaN transistors are combined with Si transistors to create enhancement mode (normal mode) A switching device capable of operating under a le-off (le-off) condition is disclosed. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2012-222360 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] With the increase in communication speeds, the switching speed of switching devices has also increased. It is required. In mixer circuits used in the transmitting and receiving circuits of communication devices, signals of different frequencies are required. It generates a multiplied signal.

[0008] A mixer circuit using a Gilbert cell (also called a Gilbert circuit) (also called an active mixer) (u) is a current-voltage (I / V) conversion unit, a current switch unit, and a voltage-current (V / I) conversion unit (amplification). It is composed of (also called the voltage-current conversion section). The transistors in the voltage-current conversion section can handle large currents. GaN transistors are used. GaN transistors allow current to flow easily when they are off. It is a normally-on transistor. Therefore, when it is off, current does not flow easily. - By applying an off-type Si transistor to the current switch section, the current that flows when it is off can be controlled. (Suppresses leakage current).

[0009] However, under high-temperature conditions, both GaN and Si transistors exhibit regeneration. There is a risk of increased leakage current. An increase in leakage current may lead to an increase in power consumption. Increased leakage current in switching devices may cause malfunctions. be.

[0010] One aspect of the present invention aims to provide a semiconductor device with a novel configuration. Alternatively, one of the challenges is to provide semiconductor devices that excel in low power consumption. One of its challenges is to provide semiconductor devices and other equipment with excellent operational reliability.

[0011] Furthermore, the description of these problems does not preclude the existence of other problems. One embodiment does not need to solve all of these problems. Other problems are addressed in the details. This will become clear from the description in the document, drawings, and claims, etc. It is possible to extract other issues from the descriptions in the sections and other documents. [Means for solving the problem]

[0012] One aspect of the present invention comprises a current-voltage conversion unit, a current switch unit, and a voltage-current conversion unit. The current switch section has a first transistor, and the voltage-to-current conversion section has a second transistor. The first transistor has an oxide semiconductor in the channel formation region, and the second transistor The transistor has a nitride semiconductor in the channel formation region, and the first transistor is the second transistor This is a semiconductor device that is installed on the upper layer of the layer to which it is provided.

[0013] One aspect of the present invention comprises a current-voltage conversion unit, a current switch unit, a voltage-current conversion unit, and a control unit. The current switch section has a first transistor, and the voltage-to-current conversion section has a second transistor. The control unit has a third transistor, and the first transistor is channel type The first transistor has an oxide semiconductor in the channel formation region, and the second transistor has a nitride semiconductor in the channel formation region. The third transistor has silicon in the channel formation region, and the first transistor has, A semiconductor device is provided on the upper layer of the layer in which the second and third transistors are provided. It is placed there.

[0014] One aspect of the present invention comprises a current-voltage conversion unit, a current switch unit, a voltage-current conversion unit, and a control unit. The current switch section has a first transistor, and the voltage-to-current conversion section has a second transistor. The control unit has a third transistor, and the first transistor is channel type The first transistor has an oxide semiconductor in the channel formation region, and the second transistor has a nitride semiconductor in the channel formation region. The third transistor has silicon in the channel formation region, and the first transistor has, The first transistor is provided on the substrate, and the second and third transistors are provided on the second substrate. Then, by bonding the first substrate and the second substrate together, the first transistor to the third transistor It is a semiconductor device in which the components are electrically connected.

[0015] In one embodiment of the present invention, the current-voltage conversion unit is preferably a semiconductor device having a resistive element. stomach.

[0016] In one embodiment of the present invention, the voltage-current conversion unit comprises a fourth transistor and an inductor. Furthermore, either the source or drain of the fourth transistor provides electrical power to the first terminal of the inductor. The second terminal of the inductor is connected to the gate of the second transistor, The fourth transistor is preferably a semiconductor device having an oxide semiconductor in the channel formation region. .

[0017] In one embodiment of the present invention, the frequency of the signal applied to the gate of the first transistor is A semiconductor device with a frequency higher than the signal applied to the gates of two transistors is preferred.

[0018] In one embodiment of the present invention, the oxide semiconductor is a semiconductor comprising In, Ga, and Zn. The apparatus is preferable.

[0019] In one embodiment of the present invention, the nitride semiconductor is preferably a semiconductor device containing Ga.

[0020] Further aspects of the present invention will be described in the following embodiments, and It is also indicated in the drawings. [Effects of the Invention]

[0021] One aspect of the present invention can provide a semiconductor device with a novel configuration, or a low It is possible to provide semiconductor devices with excellent power consumption, or devices with excellent operational reliability. We can provide advanced semiconductor devices and the like.

[0022] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not need to have all of these effects. Other effects are described in the specification. This will become clear from the description in the drawings, claims, etc., and the specification, drawings, claims From descriptions such as these, it is possible to extract other effects. [Brief explanation of the drawing]

[0023] [Figure 1] Figure 1 is a diagram illustrating an example of a semiconductor device configuration. [Figure 2] Figures 2A and 2B illustrate an example of a semiconductor device configuration. [Figure 3] Figures 3A and 3B illustrate an example of a semiconductor device configuration. [Figure 4] Figures 4A and 4B illustrate an example of the configuration of a semiconductor device. [Figure 5] Figures 5A and 5B illustrate an example of the configuration of a semiconductor device. [Figure 6] Figures 6A and 6B illustrate an example of a semiconductor device configuration. [Figure 7] Figures 7A and 7B illustrate an example of the configuration of a semiconductor device. [Figure 8] Figures 8A to 8C illustrate an example of the configuration of a semiconductor device. [Figure 9] Figure 9 is a diagram illustrating an example of the configuration of a wireless communication device. [Figure 10] Figure 10 is a diagram illustrating an example of the configuration of a wireless communication device. [Figure 11] Figure 11 shows an example of a semiconductor device configuration. [Figure 12] Figures 12A to 12C show examples of transistor configurations. [Figure 13] Figures 13A to 13C show examples of transistor configurations. [Figure 14] Figures 14A to 14C show examples of transistor configurations. [Figure 15] Figure 15A illustrates the classification of IGZO crystal structures. Figure 15B illustrates the XRD spectrum of a CAAC-IGZO film. Figure 15C illustrates the micro-electron diffraction pattern of a CAAC-IGZO film. [Figure 16] Figure 16A is a top view of a semiconductor wafer. Figure 16B is a magnified view of the chip. [Figure 17] Figure 17A is a flowchart illustrating an example of the manufacturing process for an electronic component. Figure 17B is a schematic perspective view of an electronic component. [Figure 18] Figure 18 shows an example of an electronic device. [Figure 19]Figures 19A to 19F show examples of electronic devices. [Figure 20] Figure 20 shows the hierarchical structure and requirements of IoT networks. [Figure 21] Figure 21 is an illustrative diagram of factory automation. [Modes for carrying out the invention]

[0024] Embodiments of the present invention will be described below. However, one embodiment of the present invention is not limited to the following description. The invention is not defined, and its form and details may vary without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that this can be changed. Therefore, one embodiment of the present invention is The description of the embodiments shown below shall not be interpreted as being limited to the following.

[0025] In this specification, the ordinal numbers "1st," "2nd," and "3rd" refer to the constituent elements. This is added to avoid confusion. Therefore, it does not limit the number of constituent elements. Furthermore, this does not limit the order of the components. Also, for example, the embodiments described herein The component referred to as "first" in one is in another embodiment or in the claims. It may also be the component referred to in "Second" in [the relevant section]. Furthermore, for example, in this specification, etc. In one embodiment, the component referred to as "first" is used in other embodiments, or It may be omitted in the claims.

[0026] In the drawing, elements that are identical or have similar functions, elements made of the same material, or Elements formed simultaneously may be assigned the same reference numeral, and the explanation of this repetition is omitted. It may happen.

[0027] In this specification, for example, the power supply potential VDD may be abbreviated as potential VDD, VDD, etc. This can happen. This is due to other components (e.g., signals, voltages, circuits, elements, electrodes, wiring). The same applies to (etc.).

[0028] Furthermore, when using the same sign for multiple elements, especially when it is necessary to distinguish between them... The symbols are followed by identification codes such as "_1", "_2", "[n]", and "[m,n]". In some cases, it may be written as follows: For example, the second wiring GL may be written as wiring GL[2].

[0029] (Embodiment 1) A semiconductor device according to one aspect of the present invention will be described with reference to the drawings. Figure 1 shows the present invention. One embodiment is a mixer circuit (active type) using a Gilbert cell (also called a Gilbert circuit). This is a diagram illustrating a semiconductor device 100 that functions as a mixer. The unit 100 consists of a current-voltage conversion unit 101, a current switch unit 102, and a voltage-current conversion unit 103 (increased It has a width section (also called a width section).

[0030] The current-voltage conversion unit 101 converts the flowing current I IF Convert this to a voltage and the signal V IF Output as It has the function of doing so. The current-voltage conversion unit 101 can be made up of a resistor or the like. The element can be composed of a semiconductor layer such as silicon. The current-voltage conversion unit 101 is It is sometimes called a current-voltage conversion circuit, or simply a circuit.

[0031] The current switch unit 102 allows current to flow between the current-voltage conversion unit 101 and the voltage-current conversion unit 103. It functions as a switch to toggle whether or not to interrupt the current in accordance with the signal L. O is a signal of any frequency output from an oscillator circuit or the like. The current is interrupted in accordance with the signal LO, thereby supplying the signal V to the voltage-to-current conversion unit 103. RF of Signal V is the signal obtained by converting the frequency. IF The current-voltage conversion unit 101 can output this value. The current switch section 102 may also be referred to as a current switch circuit or simply a circuit. ru.

[0032] The current switch section 102 functions as a switch that can interrupt the current. It has a transistor 111. The transistor 111 has a semiconductor layer 11 having a channel formation region. 2 is an oxide semiconductor (also called a metal oxide) A certain transistor (OS transistor) is preferred. Note that the OS transistor is n channel This section will explain the operation and other aspects of a Nell-type transistor.

[0033] Because oxide semiconductors have a band gap of 2.5 eV or more, OS transistors are extremely small. It has an off-current. For example, when the voltage between the source and drain is 3.5V and the room temperature (25°C) is below. In this case, the off-current per 1 μm of channel width is 1 × 10⁻⁶ -20 Less than A, 1 × 10 -22 Less than A, or 1 × 10 -24 It can be less than A. Option 2 allows for extremely small leakage current when the device is off.

[0034] High-density integrated semiconductor devices can generate heat due to the operation of their circuits. Due to the heat generated, the temperature of the transistor rises, which changes the characteristics of that transistor. Changes in field-effect mobility and a decrease in operating frequency can occur. OS transistors Because it has higher heat resistance than Si transistors, changes in field-effect mobility occur due to temperature changes. It is less prone to stiffness and less likely to experience a decrease in operating frequency. Furthermore, OS transistors are temperature Even if the voltage increases, the drain current increases exponentially with respect to the gate-source voltage. It is easy to maintain performance. Therefore, by using OS transistors, it is possible to maintain performance in high temperature environments. It can operate stably.

[0035] Oxide semiconductors used in OS transistors include Zn oxide and Zn-Sn oxide. Ga-Sn oxide, In-Ga oxide, In-Zn oxide, In-M-Zn oxide (M These include Ti, Ga, Y, Zr, La, Ce, Nd, Sn or Hf). Especially M and When using an oxide semiconductor with Ga in an OS transistor, the ratio of elements needs to be adjusted. This allows for the creation of transistors with excellent electrical characteristics such as field-effect mobility, thus providing a favorable outcome. It seems. Also, in oxides containing indium and zinc, aluminum, gallium, and yt Rium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, gel Manium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, Ta It contains one or more elements selected from tungsten, magnesium, and others. That's fine.

[0036] To improve the reliability and electrical characteristics of OS transistors, oxide semiconductors are applied to the semiconductor layer. The body is an oxide semiconductor having crystalline parts such as CAAC-OS, CAC-OS, and nc-OS. It is preferable to have one. CAAC-OS refers to a c-axis-aligned crystal. It is an abbreviation for alline oxide semiconductor. is a cloud-aligned composite oxide semicond It is an abbreviation for uctor. nc-OS stands for nanocrystalline oxid It is an abbreviation for e semiconductor.

[0037] CAAC-OS has c-axis orientation and multiple nanocrystals are linked in the ab-plane direction. It has a crystalline structure that is linked and distorted. Note that distortion refers to the linkage between multiple nanocrystals. Within a region, between a region with a aligned grid arrangement and another region with a aligned grid arrangement, This refers to the part where the direction has changed.

[0038] CAC-OS has the function of conducting electrons (or holes) that act as carriers, and the function of conducting electrons (or holes) that act as carriers It has a function that prevents electrons from flowing. It separates the function that allows electrons to flow from the function that prevents electrons from flowing. This allows both functions to be maximized. In other words, CAC-OS can be used as an OS transition. By using it in the channel formation region of the sta, both high on-current and extremely low off-current can be achieved. This can be achieved.

[0039] Oxide semiconductors have a large band gap, making electrons difficult to excite, and the holes are effective. Due to its larger mass, OS transistors are different from typical Si transistors. Therefore, avalanche collapse and other related processes may be less likely to occur. This can suppress hot carrier degradation, etc. By suppressing hot carrier degradation, high The OS transistor can be driven by the drain voltage.

[0040] OS transistors are storage-type transistors that use electrons as the majority carriers. Compared to inverting transistors with pn junctions (typically Si transistors), the short One of the channel effects is DIBL (Drain-Induced Barrier L). The effect of power (worring) is small. In other words, OS transistors are less powerful than Si transistors. It also has high resistance to short-channel effects.

[0041] OS transistors have high resistance to short-channel effects, therefore OS transistors By using OS transistors, the channel length can be reduced without degrading reliability. The integration density of the circuit can be increased. As the channel length is miniaturized, the drain electric field becomes stronger. However, as shown above, OS transistors exhibit avalanche decay more readily than Si transistors. It is less likely to happen.

[0042] Furthermore, OS transistors have high resistance to short-channel effects, unlike Si transistors. It becomes possible to make the gate insulating film thicker than the star. For example, channel length and channel Even in minute transistors with a width of 50 nm or less, a gate insulating film thickness of about 10 nm is used. It may be possible to implement this. By increasing the thickness of the gate insulating film, parasitic capacitance can be reduced. This allows for improved circuit operation speed. Also, by increasing the thickness of the gate insulating film, the gate Because leakage current through the insulating film is reduced, static current consumption is reduced.

[0043] Based on the above, the current switch section 102 has an OS transistor so that current flows when it is turned off. The current (leakage current) can be reduced. In addition, the layer with the OS transistor is another transistor It can be provided by being stacked on the layer having the dister. That is, the current switch unit 102 is stacked on the layer having the transistors that constitute the voltage conversion unit 101 and the voltage-current conversion unit 103 and can be provided. Therefore, it can be arranged without causing an increase in the circuit area . That is, since the circuit area where the transistors can be arranged increases, the amount of current flowing through the transistors of the current switch unit 102 can be increased .

[0044] The voltage-current conversion unit 103 has a function of converting the signal V RF into a current to obtain the current I RF . The current I RF is the current whose cutoff is controlled by the current switch unit 102. The signal V RF is , a signal given from the outside. The frequency of the signal V RF is higher than the frequency of the signal LO . That is, the voltage-current conversion unit 103 has a function of flowing the current I RF corresponding to the high-frequency signal V RF . Note that the voltage-current conversion unit 103 may be referred to as a voltage-current conversion circuit or simply a circuit .

[0045] The voltage-current conversion unit 103 has a transistor 1 RF 21 that flows the current I RF according to the voltage of the signal V . The transistor 121 is preferably a transistor (GaN transistor) in which a semiconductor layer 122 having a channel formation region has a nitride semiconductor (nitride semiconductor) containing a group 1 3 element (such as gallium) in the channel formation region . Typically, it is a transistor having gallium nitride ( hereinafter, GaN) in the channel formation region. Note that, as the GaN transistor, a transistor having GaN in the channel formation region will be described, but AlG ​​​​aN or AlN may also be used. Alternatively, high-mobility transistors other than nitride semiconductors may be used. A transistor may be used, or a transistor having SiC or similar material in the channel formation region may also be used.

[0046] When the semiconductor layer 122 is made of GaN, a configuration in which it is stacked with AlGaN is preferred. Aluminum (AlN) has a band gap approximately twice that of GaN (3.4V). (6.2eV), an electrostatic discharge field approximately four times that of GaN (3.3MV / cm) (12 MV / cm), approximately 1.5 times the thermal conductivity of GaN (2 W / cmK) It has extremely excellent material properties (W / cmK). AlGa is a mixed crystal of AlN and GaN. N is preferred as a high-power, high-frequency device material. AlGaN is used as the channel formation region. HEMT (High Electron Mobility Transistor) This allows for even higher breakdown voltage operation than HEMTs that use GaN as the channel formation region. Oh, at the interface between GaN and AlGaN, there is a secondary polarization effect between GaN and AlGaN. Two-dimensional electron gas (2DEG) It can generate [a certain type of signal] and can be used as a high-mobility transistor.

[0047] Figure 2A illustrates a specific configuration example of a semiconductor device 100 according to one aspect of the present invention. This is a diagram. The semiconductor device 100, as explained in Figure 1, includes a current-voltage conversion unit 101 and a current-voltage converter. It has a switch unit 102 and a voltage-to-current conversion unit 103.

[0048] The current-voltage conversion unit 101 has a resistive element 131A and a resistive element 131B. Switch unit 102 is signal LO + The transistor 111A is given a signal LO- was given It has a transistor 111B. Signal LO - is the signal LO + This is the inverted signal. LO + This is sometimes referred to as the signal LO. Transistors 111A and 111B are OS It is a transistor. The voltage-to-current conversion unit 103 receives the signal V RF Transistor 12 is given It has 1A. Transistor 121A is a GaN transistor.

[0049] The semiconductor device 100 receives the signal V RF And signal LO and signal V according to the frequency of LO. IF Output Do. Signal V IF The frequency is the signal V RF Let f1 be the frequency of the signal LO, and f2 be the frequency of the signal LO. This allows us to generate signals with frequencies of (f1-f2) or (f1+f2). Oh, GaN transistors have a higher field-effect mobility compared to OS transistors, It is preferable to keep the wavenumber f1 greater than the frequency f2. With this configuration, This allows for a wider range of usable frequency bands.

[0050] Transistors 111A and 111B, as shown in Figure 2A, and ZISTA 121A can be installed by stacking it on different layers on a substrate. Figure 2B shows the present invention. In a semiconductor device 100 which is one embodiment, a layer including transistors stacked on a substrate is This is a diagram for schematic representation.

[0051] In the schematic diagram of the semiconductor device 100 shown in Figure 2B, the substrate 140, transistor 121 ( Layer 141 having transistor 121A, transistor 111 (transistor 111A The layer 142 having transistor 111 (111B) is shown. It is provided on the upper layer of layer 141 having transistor 121. That is, transistor 11 1 can be provided on the upper layer of the layer on which transistor 121 is provided. OS Transistor Because the circuit area where the transistor can be placed increases, the current supplied by the transistor in the current switch section 102 The quantity can be increased.

[0052] Note that substrate 140 is SIMOX (Separation by Implanted Oxygen substrates and silicon-containing substrates such as SOI substrates can be used. A transistor (Si transistor) having silicon in the channel formation region on a plate or substrate. It is preferable because it allows for the provision of a sta.

[0053] The signal LO and the signal applied to the current switch unit 102 and the voltage-current conversion unit 103 shown in Figure 1. signal V RF This configuration is output from the control unit. For details of this configuration, see Figures 3A and 3B. I will explain by referring to it.

[0054] The semiconductor device 100A shown in Figure 3A has the same configuration as shown in Figure 1, plus a control unit 104A. This corresponds to a configuration having a control unit 104B. The control units 104A and 104B control the oscillation frequency It functions as a signal output unit for roads and other signals.

[0055] Control units 104A and 104B can generate a bias voltage. It has a transistor 131 that functions as a circuit or an oscillator. 1 is preferably a transistor that can be used to form a bias generation circuit or an oscillator circuit. For example, a transistor in which the semiconductor layer 132 having a channel formation region is silicon ( Si transistors are preferred. Si transistors are n-channel type transistors and Since a complementary circuit configuration using p-channel transistors can be used, logic It is preferable to use it as a circuit that functions as a circuit or an oscillator. A. The control unit 104B may be referred to as a control circuit, or simply a circuit.

[0056] The Si transistor 131 is provided stacked on different layers of the substrate. This is possible. Figure 3B shows a semiconductor device 100A, which is one embodiment of the present invention, on a substrate. This is a schematic diagram illustrating the layers containing transistors that are stacked on top of each other.

[0057] In the schematic diagram of the semiconductor device 100A shown in Figure 3B, the substrate 140 shown in Figure 2B, and the layer Layer 141, in addition to layer 142, is shown, as is layer 143 which has transistor 131. Layer 142 is , provided on the upper layers of layers 141 and 143. That is, transistor 111 is tra It can be provided on the upper layer of the layer on which the transistors 121 and 131 are provided. Because the circuit area where OS transistors can be placed increases, the transistors in the current switch section 102 This allows you to increase the amount of current that flows through the tube.

[0058] Figure 4A shows a specific configuration example of a modified example of the semiconductor device 100 described in Figure 2A above. This is a diagram for explanation. The semiconductor device 100B shown in Figure 4A is as explained in Figure 1. It includes a current-voltage conversion unit 101, a current switch unit 102, and a voltage-current conversion unit 103.

[0059] Transistors 111A and 1 of the current switch section 102 shown in Figure 4A 11B has a back gate electrode. And the back gate electrode has a back gate voltage. V BG The following are given. Transistor 111A and transistor are OS transistors. 111B has a back gate voltage V BG Controlling electrical characteristics such as threshold voltage by means of This is possible. Therefore, the electrical characteristics of transistors such as normally off and normally on are... It is possible to switch between these modes and operate them. Note that the back gate electrode of the OS transistor is Alternatively, it may be configured to be connected to the gate electrode. With this configuration, the current that flows when the ON state The amount of current can be increased.

[0060] Figure 4B shows a specific configuration of another modified example of the semiconductor device 100 described in Figure 2A above. This is a diagram to illustrate an example. The semiconductor device 100C shown in Figure 4B is the same as the one described in Figure 1. Thus, it has a current-voltage conversion unit 101, a current switch unit 102, and a voltage-current conversion unit 103. The mixer circuit shown in Figure 4B is a single-balanced mixer circuit, and This corresponds to a different, double-balanced mixer circuit.

[0061] The current-voltage conversion unit 101 has a resistive element 131A and a resistive element 131B. The pressure conversion unit 101 receives the signal V IF + and V IF - Outputs signal V. IF - The signal V I F + This is the inverted signal of signal V. IF + The signal V IFThis is one such case. Current switch section 102 is signal LO + Transistors 111A and 111D are given. Signal LO - It has transistors 111B and 111C that are given The transistors 111A to 111D are OS transistors. The voltage-current conversion unit 103 is , signal V RF + The transistor 121A is given the signal V RF - The It has transistor 121B. Transistors 121A and 121B are GaN transistors. It is a station. Signal V RF - The signal V RF + This is the inverted signal of signal V. RF + The signal V RF There are cases like that.

[0062] The semiconductor device 100C receives the signal V RF And signal LO and signal V according to the frequency of LO. IF Leave To exert force. Signal V IF The frequency is the signal V RF Let f1 be the frequency of the signal LO, and f2 be the frequency of the signal LO. Then, a signal V with a frequency of (f1-f2) or (f1+f2) is generated. IF + and V IF - of It can be generated.

[0063] Figure 5A shows a specific configuration of another modified example of the semiconductor device 100 described in Figure 2A above. This is a diagram to illustrate an example. The semiconductor device 100D shown in Figure 5A is the same as the one described in Figure 1. In addition to the current-voltage conversion unit 101, the current switch unit 102, and the voltage-current conversion unit 103, there is also a bias It has a voltage holding unit 105.

[0064] The bias voltage holding unit 105 maintains the bias voltage for operating the voltage-to-current conversion unit 103. It has a holding function. By holding the bias voltage with the bias voltage holding unit 105, the The voltage-current conversion unit 103 receives the input signal V RF Current I corresponding to the current I RF Making it easier to flow Yes, it is possible. The bias voltage holding unit 105 is a bias voltage holding circuit, or simply a circuit. It is sometimes called a holding circuit.

[0065] The bias voltage holding unit 105 consists of a capacitive element 151, an inductor 152, and a transistor 15 It has 3 and a capacitive element 154. Transistor 153 controls the control signal S W Controlled , via inductor 152, node N becomes the gate of transistor 121A g ni Bya S voltage V bias This provides the power to the off state by making transistor 153 an OS transistor. The current can be made extremely small. Therefore, the bias voltage holding unit 105 uses the transistor 153 By turning it off, node N g The bias voltage V applied to it bias To continue to hold It is possible.

[0066] Figure 5B also shows the timing to explain the operation of the bias voltage holding unit 105 in Figure 5A. A chart is shown. As illustrated in Figure 5B, the control signal S W Set to H level and switch This turns on transistor 153, which functions as such. Node N g The bias voltage V b ias The bias voltage V is given. By turning off transistor 153, the bias voltage Vbi as node N g It is held there. A signal V is applied to one electrode of the capacitive element 151. RF is given And, signal V RF Node N follows the changes g Bias voltage V bias This fluctuates. The current I flowing through transistor 121A changes due to the potential fluctuation. RF It can be made larger ru.

[0067] The inductor 152 shown in Figure 5A is formed by processing a conductor into a predetermined shape on a substrate. It can be provided by laminating different layers. Figures 6A and 6B show one embodiment of the present invention. In the conductor device 100, a layer containing transistors stacked on a substrate and an inductor are included. This is a diagram to schematically represent layers.

[0068] In the schematic diagram of the semiconductor device 100E shown in Figure 6A, the substrate 140 shown in Figure 3B, and the layer Layer 141, Layer 142, Layer 143, and Layer 144, which includes the inductor 152, are shown. 44 is provided on the upper layer of layer 142. That is, layer 144, which includes the inductor 152, It can be placed on top of the layer containing the transistor. Alternatively, it can be a semiconductor as shown in Figure 6B. As in the device 100F, layer 144 can be placed between layers containing transistors. The inductor can be formed, for example, with a conductive material of about 2 μm thickness. Semiconductor device 10 By using the 0E, 100F configuration, the configuration including the bias voltage holding unit 105 can be formed on the substrate. It is possible.

[0069] Figure 7A shows a specific configuration of another modified example of the semiconductor device 100 described in Figure 2A above. This is a diagram to illustrate an example. In Figure 7A, the current switch section in semiconductor device 100G The transistor sizes of transistors 111A and 111B are 102, This schematically represents making it larger than the transistor 121A of the voltage-current conversion unit 103.

[0070] Furthermore, transistors 111A and 111B of the current switch section 102 The transistor size is the transistor size of the transistor 121A in the voltage-current conversion unit 103. By making it larger than this, the amount of current determined by the transistor of the voltage-current conversion unit 103 is controlled It can be switched without limitations. OS transistors are the same transistor Compared to sta-size GaN transistors, the current is smaller. Therefore, OS transistors The channel length is preferably shorter than the channel length of the GaN transistor. The channel width of the transistor is preferably larger than the channel width of the GaN transistor. With this configuration, the amount of current flowing through the current switch unit 102 is controlled by the voltage-to-current conversion unit 10 It can be brought closer to 3.

[0071] Note that the OS transistors are transistors 111A and 102 of the current switch section 102. When increasing the transistor size of the 111B transistor, the OS transistor arrangement is as follows: A large circuit area is preferable. For example, the schematic of the semiconductor device 100H shown in Figure 7B As shown in the figure, layer 142, which is a layer containing OS transistors, is divided into multiple layers 142A, 142B, etc. By using a stacked configuration, the circuit area available for placing OS transistors can be increased. It is possible.

[0072] Figures 8A to 8C show the stacked configuration of semiconductor device 100A, etc., as described in Figure 3B, etc. This is a diagram illustrating a specific configuration example. The blocks shown in Figures 8A to 8C In Figure C, the various components on the substrate 140 (layers 141, 142, and 143) are shown as explained in Figure 3B, etc. This schematically represents the arrangement of elements.

[0073] Figure 8A shows layers 141, 142, and 143 provided on the substrate 140, as well as GaN It has a transistor 131 which is a transistor, and is provided between layer 141 and substrate 140. The buffer layer 145 is shown. The buffer layer 145 is made of different types of semiconductors on the substrate 140. It is provided to form a nitride semiconductor such as GaN, which is a conductive layer. The configuration is as shown in Figure 8A. By doing so, a layer 141 having transistor 121 and transistor 13 on the substrate 140 A layer 143 having 1 is provided, and a layer 142 having transistor 111 is sequentially stacked on top of it. It can be configured in this way.

[0074] Figure 8B shows a substrate 140 on which layer 141 is provided on buffer layer 145, and a transistor A layer 143 having 131 and a layer 142 having transistor 111 are stacked and provided. By bonding the substrate 146 and the other components together, each transistor is electrically connected to form a semiconductor device. An example configuration is shown in the diagram. The substrate 146 has a transistor 121 in layer 141 that is S Because it is an i-transistor, it is used on substrates containing silicon, such as SIMOX substrates and SOI substrates. It can be used. Furthermore, plasma activation is a technique used for bonding substrates. Bonding technologies, such as Cu-Cu bonding, can be used to join substrates. ru.

[0075] In Figure 8C, the substrate 140 on which layer 143 and layer 141 on the buffer layer 145 are provided A substrate 147 on which layers 142 having transistors 111 are stacked and bonded together This diagram illustrates an example configuration in which each transistor is electrically connected to form a semiconductor device. Since the transistor 121 in layer 142 of substrate 147 is an OS transistor, In addition to recycled substrates, glass substrates and other materials can also be used.

[0076] One aspect of the present invention comprises a current-voltage conversion unit, a current switch unit, and a voltage-current conversion unit. In a semiconductor device that functions as an active mixer, the transistor in the current switch section is O The transistors in the voltage-to-current conversion section are S-transistors, and the transistors in the voltage-to-current conversion section are GaN transistors. Therefore, changes in off-current caused by fluctuations in transistor characteristics can be reduced, leading to lower power consumption. We can provide excellent semiconductor devices, etc. Or, in transient environments such as high temperature environments We provide semiconductor devices with excellent operational reliability, even in situations where variations in performance characteristics are likely to occur. It is possible. Also, the layer having OS transistors consists of GaN transistors and Si The act of stacking transistors, which have different types of semiconductor layers, together. This allows us to provide miniaturized semiconductor devices and other similar equipment.

[0077] (Embodiment 2) In this embodiment, the integrated circuit includes the semiconductor device 100 shown in the above embodiment. An example of the configuration of the wireless communication device will be explained using Figures 9 and 10. In this explanation, we will use a smartphone as an example of a wireless communication device, but we will also discuss portable game terminals. Other devices such as tablet PCs (personal computers) and notebook PCs. It may also be a wireless communication terminal. Furthermore, the wireless communication device according to this embodiment uses wireless communication It can be applied to devices that can perform this function.

[0078] In the block diagram of the wireless communication device 10 shown in Figure 9, the antenna ANT and application Integra processor 11, baseband processor 12, integrated circuit 13 (IC: Integra ted Circuit), memory 14, battery 15, power management IC (PM IC:Power Management Integrated Circuit)1 6, display unit 17, camera unit 18, operation input unit 19, audio IC 20, microphone 21, and It also has a speaker 22. The integrated circuit 13 is RF (Radio Frequency). y) Also called IC or wireless chip.

[0079] To support the 5G communication standard, multiple antennas (ANT) are installed according to different frequency bands. It is possible.

[0080] The application processor 11 reads the program stored in memory 14. It has a function to perform processing to realize various functions of the wireless communication device 10. For example, app The application processor 11 receives the OS (Operating System) from the memory 14. m) Execute the program and the application that uses this OS program as its operating base. It has the function to execute programs.

[0081] The baseband processor 12 encodes the data transmitted and received by the wireless communication device 10. Functions that perform baseband processing, including (for example, error correction coding) processing or decoding processing. It has. Specifically, the baseband processor 12 transmits the data to the application. The data is received from the decoder 11, and the received transmission data is encoded and aggregated. It has the function of transmitting to channel 13. Also, the baseband processor 12 is integrated circuit 13 or The application receives the received data and performs a decoding process on the received data. It has the function of transmitting to the signal processor 11.

[0082] The integrated circuit 13 performs modulation or demodulation processing on the data transmitted and received by the wireless communication device 10. It has the function of performing the following. Specifically, the integrated circuit 13 receives from the baseband processor 12. The received transmission data is modulated using a carrier wave to generate a transmission signal, which is then transmitted via an antenna (ANT). It has the function of outputting a transmission signal via the antenna ANT. The system receives the received signal, demodulates the received signal using a carrier wave to generate received data, and then receives the signal. It has the function of transmitting data to the baseband processor 12.

[0083] Memory 14 is used by the application processor 11 for programs and data It has the function of storing data. Furthermore, the memory 14 retains the stored data even when the power is cut off. It has non-volatile memory that holds data, and the stored data is cleared when the power is cut off. Includes volatile memory.

[0084] Battery 15 is used when the wireless communication device 10 operates without an external power supply. Furthermore, the wireless communication device 10 will also use the battery 15 even when an external power supply is connected. It can utilize the power supply. In addition, the battery 15 can be charged and discharged. It is preferable to use a second battery.

[0085] The power management IC 16 generates the internal power supply voltage from the battery 15 or an external power supply. It has the function of providing this internal power supply voltage to each block of the wireless communication device 10. At that time, the power management IC16 internally controls the internal power supply voltage for each block that receives the internal power supply voltage. It has the function of controlling the power supply voltage. Power management IC16 is an application... Based on instructions from regulator 11, the internal power supply voltage is controlled. Furthermore, the power manager... The ment IC16 can also control the supply and cutoff of the internal power supply voltage for each block. Furthermore, the power management IC 16 supplies power to the battery 15 when an external power supply is available. It also has a function to control the charging of the battery.

[0086] The display unit 17 is a liquid crystal display device or a light-emitting display device, and is an application process It has the function of displaying various images according to the processing in Sa 11. Display unit 17 The images shown include a user interface through which the user gives operational instructions to the wireless communication device 10. This includes images, camera images, videos, etc.

[0087] The camera unit 18 acquires an image according to instructions from the application processor 11. It has the function of allowing the user to operate the operation input unit 19 to give operation instructions to the wireless communication device 10. It has a function as a user interface for application. Audio IC20 is an application The audio data transmitted from the communication processor 11 is decoded and output to the speaker 22. It has a driving function. In addition, the audio IC 20 uses the audio information obtained from the microphone 21. The system encodes the data to generate audio data, and then sends this audio data to the application processor 11. It has the function of outputting.

[0088] Figure 10 is a block diagram illustrating an example of the configuration of the integrated circuit 13. The integrated circuit 13 consists of a low-noise amplifier 201, a mixer 202, a low-pass filter 203, and a variable Gain amplifier 204, analog-to-digital conversion circuit 205, interface section 206, Digital-to-analog conversion circuit 207, variable gain amplifier 208, low-pass filter 209, It has a 210 saxophone, a 211 power amplifier, and an oscillator circuit 212. Also in Figure 10, The diagram shows the antenna (ANT), duplexer (DUP), and baseband processor (12) together. Furthermore, the low-noise amplifier 201, mixer 202, low-pass filter 203, and variable gain amplifier are also included. The amplifier 204 and the analog-to-digital conversion circuit 205 are the receiving circuit block, and the digital-to-analog converter. Logarithmic conversion circuit 207, variable gain amplifier 208, low-pass filter 209, mixer 210 The power amplifier 211 is sometimes referred to as the transmitting circuit block.

[0089] The baseband processor 12 and the integrated circuit 13 are each on separate semiconductor chips. This is achieved through this process. The duplexer (DUP) includes components such as an antenna switch.

[0090] The low-noise amplifier 201 amplifies the signal received by the antenna ANT with low noise. Sa 202 corresponds to a configuration having the semiconductor device 100 described in Embodiment 1 above. Kisa 202 uses the signal from the oscillator circuit 212 to demodulate and downconvert (change frequency) the signal. The low-pass filter 203 filters out unwanted high-frequency components from the signal from the mixer 202. The fraction is removed. The variable gain amplifier 204 converts the output signal of the low-pass filter 203 into an analog. The signal is amplified with gain that takes into account the input range of the analog-to-digital conversion circuit 205. The conversion circuit 205 converts the analog signal from the variable gain amplifier 204 into a digital signal. The digital signal is sent to the baseband processor 12 via the interface unit 206. Output.

[0091] The digital-to-analog conversion circuit 207 receives the digital signal from the interface unit 206. Converts the signal to an analog signal. The variable gain amplifier 208 is part of the digital-to-analog conversion circuit 2. The output signal from 07 is amplified. The low-pass filter 209 is from the variable gain amplifier 208. Unwanted high-frequency components in the signal are removed. Mixer 210 is described in Embodiment 1 above. This corresponds to a configuration having a semiconductor device 100. The mixer 210 receives the signal from the oscillator circuit 212. It is used for modulation and upconversion (frequency conversion). Power amplifier 211 is mixed The output signal of SA210 is amplified with a predetermined gain and output.

[0092] The configurations, structures, and methods shown in this embodiment may differ from those shown in other embodiments. It can be used in appropriate combination with other methods, etc.

[0093] (Embodiment 3) In this embodiment, the transistor applicable to the semiconductor device described in the above embodiment is Let's explain the configuration. As an example, transistors with different electrical characteristics are stacked to form the structure. The configuration described below will increase the design flexibility of the semiconductor device. This can be achieved. Furthermore, by stacking transistors with different electrical characteristics, semiconductors can be formed. This allows for an increase in the integration density of the body components.

[0094] A partial cross-sectional structure of a semiconductor device is shown in FIG. 11. The semiconductor device shown in FIG. 11 has a transistor 550, a transistor 500, a transistor 650, and a capacitor element 600. FIG. 12A is a cross-sectional view of the transistor 500 in the channel length direction, and FIG. 12B is a cross-sectional view of the transistor 500 in the channel width direction, and FIG. 12C is a cross-sectional view of the transistor 550 in the channel width direction. For example, the transistor 500 corresponds to the transistor 111 shown in the above embodiment, the transistor 550 corresponds to the transistor 131, and the transistor 650 corresponds to the transistor 121. Also, the capacitor element 600 corresponds to the capacitor element 151.

[0095] The transistor 500 is an OS transistor. In FIG. 11, the transistor 500 is provided above the transistor 550 and the transistor 650, and the capacitor element 600 is provided above the transistor 550, the transistor 650, and the transistor 500.

[0096] The transistor 550 is provided on the substrate 311 and has a semiconductor region 313 composed of a conductor 316, an insulator 315, and a part of the substrate 311, a low-resistance region 314a that functions as a source region or a drain region, and a low-resistance region 314b.

[0097] As shown in FIG. 12C, the upper surface and the side surface in the channel width direction of the semiconductor region 313 of the transistor 550 are covered with the conductor 316 via the insulator 315. Thus, by making the transistor 550 a Fin type, the effective channel width is increased, thereby improving the on characteristics of the transistor 550. Also, the influence of the electric field of the gate electrode ​​Since it can be increased, the off characteristics of the transistor 550 can be improved. It can.

[0098] Note that the transistor 550 may be either a p-channel transistor or an n-channel transistor. Either one is fine.

[0099] In the region where the channel of the semiconductor region 313 is formed, the region in the vicinity thereof, the source region, or the drain region, a low-resistance region 314a, a low-resistance region 314b, etc., it is preferable to include a semiconductor such as a silicon-based semiconductor, and it is preferable to include single-crystalline silicon. Or, it may be formed of a material having Ge (germanium), SiGe (silicon germanium), GaAs (gallium arsenide), GaAlAs (gallium aluminum arsenide), etc. It is also possible to use a configuration using silicon in which the effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing. Or, by using GaAs and GaAlAs, etc., the transistor 550 may be a HEMT (High Electron Mobility Transistor). It is good. Or, Ge (germanium), SiGe (silicon germanium), GaAs (gallium arsenide), GaAlAs (gallium aluminum arsenide), etc. It may also be formed of a material having such as GaAs and GaAlAs. Silicon in which the effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing. Or, by using GaAs and GaAlAs, etc., the transistor 550 may be a HEMT (High Electron Mobility Transistor). stor) may also be used. It may be.

[0100] The low-resistance region 314a and the low-resistance region 314b include, in addition to the semiconductor material applied to the semiconductor region 313, an element that imparts n-type conductivity such as arsenic and phosphorus, or an element that imparts p-type conductivity such as boron. In addition to the semiconductor material applied to the semiconductor region 313, the low-resistance region 314a and the low-resistance region 314b include an element that imparts n-type conductivity such as arsenic and phosphorus, or an element that imparts p-type conductivity such as boron. It contains.

[0101] The conductor 316 that functions as a gate electrode can be formed of a conductive material such as a semiconductor material such as silicon containing an element that imparts n-type conductivity such as arsenic and phosphorus, or an element that imparts p-type conductivity such as boron, a metal material, an alloy material, or a metal oxide material. The conductor 316 that functions as a gate electrode can be formed of a conductive material such as a semiconductor material such as silicon containing an element that imparts n-type conductivity such as arsenic and phosphorus, or an element that imparts p-type conductivity such as boron, a metal material, an alloy material, or a metal oxide material. It can be used. It can be.

[0102] Furthermore, since the work function is determined by the material of the conductor, the material of the conductor must be selected accordingly. This allows you to adjust the threshold voltage of the transistor. Specifically, by using nitride in the conductor... It is preferable to use materials such as tan or tantalum nitride. Furthermore, both conductivity and embedding properties are desirable. To achieve this, metal materials such as tungsten and aluminum are used as laminates in the conductive material. This is preferable, and using tungsten is particularly preferable in terms of heat resistance.

[0103] Transistor 550 is an SOI (Silicon on Insulator) board. It may be formed using any of the following methods.

[0104] Furthermore, as an SOI substrate, oxygen ions are implanted into a mirror-polished wafer, and then heated to a high temperature. This process forms an oxide layer to a certain depth from the surface, and also removes defects that have formed in the surface layer. SIMOX (Separation by Implanted) Growth of microvoids formed by hydrogen ion implantation on an oxygen substrate through heat treatment. The smart cut method, ELTRAN method (registered trademark: Epi), uses this to cleave semiconductor substrates. SOI substrates formed using methods such as taxial layer transfer are used. It may be. Transistors formed using a single crystal substrate may have a single crystal in the channel formation region. It contains semiconductors.

[0105] Now, let's explain transistor 650. Transistor 650 is a transistor It is formed on the same substrate as the 550. Transistor 650 is made on a single-crystal silicon substrate, sapphire Transistors are formed using semiconductor layers formed on an ear substrate or SOI substrate. 650 is a nitride semiconductor having gallium in the channel formation region. The semiconductor layer preferably has a crystal structure containing gallium. Examples of the semiconductor layer containing gallium include gallium nitride (hereinafter, GaN). The semiconductor layer preferably has a crystal structure containing gallium. Examples of the semiconductor layer containing gallium include gallium nitride (hereinafter, GaN). and the like.

[0106] A semiconductor device using GaN for the semiconductor layer 654 will be described with reference to FIG. 11. For example GaN can be formed by providing a buffer layer 652 on a substrate 311 and epitaxially growing single-crystal GaN on the buffer layer 652. The single-crystal GaN formed by epitaxial growth corresponds to the semiconductor layer 654. In FIG. 11, an example using a single-crystal silicon substrate for the substrate 311 is shown. The single-crystal GaN formed by epitaxial growth corresponds to the semiconductor layer 654. In FIG. 11, an example using a single-crystal silicon substrate for the substrate 311 is shown. The single-crystal GaN formed by epitaxial growth corresponds to the semiconductor layer 654. In FIG. 11, an example using a single-crystal silicon substrate for the substrate 311 is shown. The single-crystal GaN formed by epitaxial growth corresponds to the semiconductor layer 654. In FIG. 11, an example using a single-crystal silicon substrate for the substrate 311 is shown.

[0107] When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure When forming the transistor 650, it is preferable to use a semiconductor layer formed by epitaxially growing a semiconductor layer 656 on the semiconductor layer 654. When the semiconductor layer 654 is GaN, the semiconductor layer 656 is preferably AlGaN. For example, aluminum nitride (AlN) has extremely excellent material properties such as a bandgap (6.2 eV) about twice that of GaN, a breakdown electric field (12 MV / cm) about four times that of GaN, and a thermal conductivity (2.9 W / cmK) about 1.5 times that of GaN. Therefore, AlN and AlGaN, which is a mixed crystal of AlN and GaN, are preferable as high-power and high-frequency device materials. A HEMT (High Electron Mobility Transistor) having AlGaN in the channel formation region can operate with a higher breakdown voltage than a HEMT having GaN in the channel formation region. Note that a two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure 2DEG is the channel-forming region.

[0108] A conductor 330 is provided on the semiconductor layer 656. The conductor 330 is connected to the transistor 6 This corresponds to 50 sources or drains.

[0109] The insulator 324 is provided sandwiched between the conductor 658 and the semiconductor layer 656. In other words, conductor 658 is the gate electrode, and insulator 324 is the gate insulator of transistor 650. It may also be made of silicon oxide, aluminum oxide, or hafnium oxide. These can be used. For example, the insulator 324 may be silicon oxide, aluminum oxide, etc. By including either or hafnium oxide, the off-current of transistor 650 To reduce. Furthermore, to describe the gate insulator in more detail, the gate insulator is SiO2 A membrane, an Al2O3 membrane, or an HfO2 membrane is preferred.

[0110] Furthermore, it is preferable that transistor 650 has a recessed gate structure. In Figure 11, Transistor 650 shows an example with a recessed gate structure. Transistor 65 Because transistor 650 has a recessed gate structure, the off-current is reduced. This is possible. The recess gate structure is located at a position that overlaps with the gate electrode that forms the channel formation region. It is formed by etching the semiconductor layer 656 and thinning the semiconductor layer 656. The region of the semiconductor layer 656 that is thinned by the process is called the recess region. The recess region is 2D High threshold voltage can be achieved by depletion enhancement of the EG. Also, the non-recess region is 2DE A large current can be passed because the concentration of G increases.

[0111] The transistor 550 is covered with insulators 320, 322, 324, and The edge members 326 are arranged in a series of stacked layers.

[0112] For example, acid Silicon oxide, silicon nitride, silicon nitride, silicon nitride, aluminum oxide, Aluminum oxide nitride, aluminum nitride oxide, aluminum nitride, etc., can be used.

[0113] In this specification, silicon oxidnitride refers to a material whose composition contains more oxygen than nitrogen. It refers to materials with a high content of nitrogen, and silicon nitride, in terms of its composition, contains more nitrogen than oxygen. This indicates a material with a high concentration of [amount]. Furthermore, in this specification, aluminum oxide nitride is defined as [component]. It refers to a material in which the oxygen content is higher than the nitrogen content, and aluminum nitride oxide is a combination of these materials. This refers to materials with a higher nitrogen content than oxygen content.

[0114] The insulator 322 provides a step created by the transistor 550 and the like located below it. It may also function as a planarizing film that flattens the surface. For example, the upper surface of the insulator 322 is To improve flatness, the surface is flattened using a planarization treatment such as chemical mechanical polishing (CMP). It's fine if you do that.

[0115] Furthermore, the insulator 324 receives transistors from the substrate 311 or transistors 550, etc. A barrier film is provided in the region where the STA500 is installed, so as not to diffuse hydrogen or impurities. It is preferable to use it.

[0116] As an example of a film that has barrier properties against hydrogen, for example, silica nitride formed by CVD CON can be suitably used. Here, an oxide semiconductor such as transistor 500 is used. In some cases, the properties of a semiconductor device may deteriorate due to the diffusion of hydrogen into that device. Therefore, to suppress the diffusion of hydrogen between transistor 500 and transistor 550 It is preferable to use a membrane that suppresses hydrogen diffusion. Specifically, a membrane that suppresses the amount of hydrogen desorption Use a membrane with minimal volume.

[0117] The amount of hydrogen desorption can be analyzed, for example, using a thermodynamic desorption gas analysis (TDS) method. Yes, it is possible. For example, the amount of hydrogen desorption from insulator 324 can be determined by TDS analysis when the film surface temperature is In the range of 50°C to 500°C, the amount of desorption converted to hydrogen atoms is the area of ​​the insulator 324. Converted to a single win, 10 x 10 15 atoms / cm 2 The following is preferably 5 × 10 15 a toms / cm 2 The following is acceptable.

[0118] Furthermore, it is preferable that the dielectric constant of the insulator 326 is lower than that of the insulator 324. For example, The relative permittivity of the edge material 326 is preferably less than 4, and more preferably less than 3. Also, for example, an insulator... The relative permittivity of 326 is preferably 0.7 times or less, and preferably 0.6 times or less, than the relative permittivity of the insulator 324. This is more preferable. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance that occurs between the wiring is reduced. It can be reduced.

[0119] Furthermore, insulators 320, 322, 324, and 326 contain capacitive elements. Conductors 328 and 330, etc., which connect to transistor 600 or transistor 500, are embedded. It is embedded. Also, the conductor 330 is the source or drain of the transistor 650. It functions as a pole. Conductors 328 and 330 are plugs or wires. It functions as a wire. Furthermore, multiple conductors function as plugs or wiring. In some cases, the same reference numeral is assigned to the entire configuration. The wiring and the plug that connects to it may be a single integrated unit. That is, a part of the conductor may be the wiring. In some cases, it functions as a plug, and in other cases, part of the conductor also functions as a plug.

[0120] The materials for each plug and wiring (conductor 328, conductor 330, etc.) are metal materials. Conductive materials such as alloy materials, metal nitride materials, or metal oxide materials are used in a single layer or in a multilayer structure. It can be used in this way. High heat resistance and conductivity can be achieved with tungsten, molybdenum, and other materials. It is preferable to use a melting point material, and it is preferable to use tungsten. Alternatively, aluminum It is preferable to form it with a low-resistance conductive material such as aluminum or copper. This can lower the wiring resistance.

[0121] A wiring layer may be provided on the insulator 326 and the conductor 330. For example, in Figure 11 Insulators 350, 352, and 354 are arranged in a sequential stack. Furthermore, a conductor 356 is formed on insulators 350, 352, and 354. Conductor 356 is a plug that connects to transistor 550 and transistor 650. It functions as a connecting plug or wiring. Note that conductor 356 is conductor 328, It can also be provided using the same material as the conductor 330.

[0122] Furthermore, for example, insulator 350 has a barrier property against hydrogen, similar to insulator 324. It is preferable to use an insulator. Furthermore, the conductor 356 has barrier properties against hydrogen. It is preferable to include a conductor. In particular, it is preferable to include an insulator 350 that has barrier properties against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. With this configuration, The transistor 550 or transistor 650 is a transistor 500, and a barrier layer It can be separated, from transistor 550 or transistor 650 to transistor 5 This can suppress the diffusion of hydrogen into 00.

[0123] For example, tantalum nitride can be used as a conductor that has barrier properties against hydrogen. It would be good to do so. Also, by laminating tantalum nitride and highly conductive tungsten, the wiring can be made It is possible to suppress the diffusion of hydrogen from transistor 550 while maintaining conductivity. In this case, the tantalum nitride layer having barrier properties against hydrogen has barrier properties against hydrogen It is preferable that the insulator 350 having the above characteristics is in contact with the insulator 350.

[0124] A wiring layer may be provided on the insulator 354 and the conductor 356. For example, in Figure 11 Insulators 360, 362, and 364 are arranged in a series of layers. Furthermore, a conductor 366 is formed on insulators 360, 362, and 364. Conductor 366 has the function of a plug or wiring. It can be provided using the same material as conductors 328 and 330.

[0125] Furthermore, for example, insulator 360 has a barrier property against hydrogen, similar to insulator 324. It is preferable to use an insulator. Furthermore, the conductor 366 has barrier properties against hydrogen. It is preferable to include a conductor. In particular, an insulator 360 having barrier properties against hydrogen is preferable. A conductor having a barrier property against hydrogen is formed in the opening. With this configuration, The transistor 550 or transistor 650 is a transistor 500, and a barrier layer It can be separated, from transistor 550 or transistor 650 to transistor 5 This can suppress the diffusion of hydrogen into 00.

[0126] A wiring layer may be provided on the insulator 364 and the conductor 366. For example, in Figure 11 Insulators 370, 372, and 374 are arranged in a sequential stack. Furthermore, a conductor 376 is formed on insulators 370, 372, and 374. It is present. Conductor 376 has the function of a plug or wiring. Note that Conductor 376 is It can be provided using the same material as conductors 328 and 330.

[0127] Furthermore, for example, insulator 370, like insulator 324, has barrier properties against hydrogen. It is preferable to use an insulator. Furthermore, the conductor 376 has barrier properties against hydrogen. It is preferable to include a conductor. In particular, an insulator 370 having barrier properties against hydrogen is preferable. A conductor having a barrier property against hydrogen is formed in the opening. With this configuration, The transistor 550 or transistor 650 is a transistor 500, and a barrier layer It can be separated, from transistor 550 or transistor 650 to transistor 5 This can suppress the diffusion of hydrogen into 00.

[0128] A wiring layer may be provided on the insulator 374 and the conductor 376. For example, in Figure 11 Insulators 380, 382, ​​and 384 are arranged in a sequential stack. Furthermore, a conductor 386 is formed on insulators 380, 382, ​​and 384. Conductor 386 functions as a plug or wiring. It can be provided using the same material as conductors 328 and 330.

[0129] For example, insulator 380, like insulator 324, has barrier properties against hydrogen. It is preferable to use an insulator. Furthermore, the conductor 386 has barrier properties against hydrogen. It is preferable to include a conductor. In particular, an insulator 380 having barrier properties against hydrogen is preferable. A conductor having a barrier property against hydrogen is formed in the opening. With this configuration, The transistor 550 or transistor 650 is a transistor 500, and a barrier layer It can be separated, from transistor 550 or transistor 650 to transistor 5 This can suppress the diffusion of hydrogen into 00.

[0130] In the above, a wiring layer containing a conductor 356, a wiring layer containing a conductor 366, and a conductor 376 A wiring layer including and a wiring layer including the conductor 386 have been described, but in this embodiment The semiconductor device is not limited to this. Wiring layers similar to those containing the conductor 356 The number of layers may be three or fewer, or the number of wiring layers similar to the wiring layer containing conductor 356 may be five or more. That's fine.

[0131] Insulator 384 is on insulator 510, insulator 512, insulator 514, and insulator 516 However, they are arranged in layers in order. Insulator 510, insulator 512, insulator 514, and It is preferable that one of the insulators 516 be made of a material that has barrier properties against oxygen and hydrogen. It's nice.

[0132] For example, insulators 510 and 514 are, for example, substrate 311, transistor From the region where transistor 550 is provided, or the region where transistor 650 is provided, transistor 5 A barrier film is used in the region where 00 is provided, so as not to allow hydrogen or impurities to diffuse. This is preferable. Therefore, insulators 510 and 514 are similar to insulator 324. Materials can be used.

[0133] As an example of a film with hydrogen barrier properties, silicon nitride formed by CVD is used. It is possible to have a semiconductor device having an oxide semiconductor such as transistor 500. Furthermore, hydrogen diffusion can degrade the properties of the semiconductor device. Therefore, Between transistor 500 and transistor 550 or transistor 650, hydrogen is expanded It is preferable to use a membrane that suppresses diffusion. Specifically, a membrane that suppresses hydrogen diffusion is a water The membrane should have a small amount of basic desorption.

[0134] Furthermore, as a film having barrier properties against hydrogen, for example, insulator 510 and insulator 514 uses metal oxides such as aluminum oxide, hafnium oxide, and tantalum oxide. It is preferable to do so.

[0135] In particular, aluminum oxide is a source of oxygen and water, which can cause variations in the electrical properties of transistors. It has a high barrier effect that prevents both elements and impurities such as water from passing through the membrane. Therefore, Aluminum oxide is affected by hydrogen, moisture, etc. during and after the transistor fabrication process. This prevents impurities from entering transistor 500. The release of oxygen from the oxides that make up 00 can be suppressed. Therefore, the transient It is suitable for use as a protective film for Ta500.

[0136] Furthermore, for example, the insulators 512 and 516 are made of the same material as the insulator 320. It can be used. Furthermore, these insulators can be made by applying materials with relatively low dielectric constants. This reduces parasitic capacitance between wires. For example, insulator 512, and As the edge 516, a silicon oxide film or a silicon oxide-nitride film can be used.

[0137] Furthermore, insulators 510, 512, 514, and 516 contain conductive materials. 518, and the conductors (e.g., conductor 503) that make up transistor 500 are embedded It is included. Note that the conductor 518 is a capacitive element 600, a transistor 550, or a transistor. It functions as a plug or wiring to connect to the Rangista 650. Conductor 518 is These can be provided using the same material as conductor 328 and conductor 330.

[0138] In particular, the conductor 518 in the region in contact with the insulator 510 and the insulator 514 is oxygen, hydrogen Preferably, the material is a conductor that has barrier properties against water. With this configuration, The transistor 550 or transistor 650 is a variant of the transistor 500, and is used for oxygen, hydrogen, and A layer that has barrier properties against water, which can be separated, transistor 550 or This can suppress the diffusion of hydrogen from transistor 650 to transistor 500.

[0139] A transistor 500 is provided above the insulator 516.

[0140] As shown in Figures 12A and 12B, transistor 500 is connected to insulator 514 and A conductor 503 is arranged to be embedded in the edge 516, and the insulator 516 and the conductor An insulator 520 placed on top of 503, and an insulator 522 placed on top of insulator 520 , an insulator 524 placed on top of the insulator 522, and an oxide placed on top of the insulator 524. 530a, oxide 530b placed on oxide 530a, and on oxide 530b Conductors 542a and 542b are arranged at a distance from each other, and conductor 542a and conductor It is placed on the conductive body 542b and superimposed between the conductive body 542a and the conductive body 542b to form an opening. The insulator 580, the insulator 545 positioned on the bottom and sides of the opening, and the insulator 54 It has a conductor 560 arranged on the forming surface of 5.

[0141] Furthermore, as shown in Figures 12A and 12B, oxide 530a, oxide 530b, and conductive An insulator 544 is placed between the body 542a, the conductor 542b, and the insulator 580. This is preferable. Also, as shown in Figures 12A and 12B, the conductor 560 is an insulator 5 A conductor 560a is provided inside 45, and is embedded inside the conductor 560a It is preferable to have a conductor 560b provided. Also, Figures 12A and 12B As shown, an insulator 574 is placed on top of an insulator 580, a conductor 560, and an insulator 545. It is preferable that they be arranged in this manner.

[0142] In this specification, oxides 530a and 530b are collectively referred to as oxidation. There are cases where it is called material 530. Conductors 542a and 542b are collectively called conductor 5 There are cases where the answer is 42.

[0143] Furthermore, in transistor 500, in the region where the channel is formed and in its vicinity, acid The present invention describes a configuration in which two layers, oxide 530a and oxide 530b, are stacked, but The present invention is not limited to this. For example, a single layer or three layers of oxide 530b. The above-described layered configuration may also be used.

[0144] Furthermore, in transistor 500, the conductor 560 is shown as a two-layer stacked structure, The present invention is not limited to this embodiment. For example, the conductor 560 may have a single-layer configuration. It may be a simple structure, or a laminated structure of three or more layers. Also, as shown in Figures 11 and 12A. Transistor 500 is just one example, and its configuration is not the only one that is applicable; it depends on the circuit configuration, driving method, etc. Simply use the appropriate transistor.

[0145] Here, conductor 560 functions as the gate electrode of the transistor, and conductor 542a The conductor 542b functions as either a source electrode or a drain electrode, respectively. Thus, the conductor 560 is located at the opening of the insulator 580, and the conductors 542a and 542b It is formed to be embedded in the region sandwiched between the conductor 560, conductor 542a and The arrangement of the conductor 542b is self-aligned with the opening of the insulator 580. In transistor 500, the gate electrode is placed between the source electrode and the drain electrode. They can be arranged in a self-aligned manner. Therefore, a margin for alignment is provided for the conductor 560. Since it can be formed without any modifications, the occupied area of ​​transistor 500 can be reduced. This makes it possible to miniaturize and highly integrate semiconductor devices.

[0146] Furthermore, the conductor 560 is self-aligned in the region between conductor 542a and conductor 542b. As a result, the conductor 560 is formed in a region that overlaps with the conductor 542a or the conductor 542b. It does not have. As a result, between conductor 560 and conductors 542a and conductor 542b The parasitic capacitance that is formed can be reduced. Therefore, the switching of transistor 500 This allows for improved speed and enhanced frequency response.

[0147] The conductor 560 may function as the first gate (also called the top gate) electrode. Furthermore, the conductor 503 functions as a second gate (also called a bottom gate) electrode. There are cases where this occurs. In that case, the voltage applied to conductor 503 is the same as the voltage applied to conductor 560. By changing them independently and without linking them, the threshold voltage of transistor 500 is controlled. This can be done. In particular, by applying a negative voltage to the conductor 503, the transistor 5 This makes it possible to increase the threshold voltage of 00 and reduce the off-current. Applying a negative voltage to the conductor 503 results in a greater marking on the conductor 560 than not applying a negative voltage. The drain current can be reduced when the applied voltage is 0V.

[0148] The conductor 503 is positioned to overlap with the oxide 530 and the conductor 560. Therefore, when a voltage is applied to the conductor 560 and the conductor 503, the conductor 560 produces The electric field generated by the conductor 503 connects with the electric field generated by the conductor 503, and a chain reaction is formed in the oxide 530. It can cover the channel formation region.

[0149] In this specification, etc., a pair of gate electrodes (a first gate electrode and a second gate electrode) The electric field of ) electrically surrounds the transistor configuration that forms the channel formation region, This is called a rounded channel (S-channel) configuration. In this configuration, the S-channel configuration functions as a source electrode and a drain electrode. The sides and periphery of the oxide 530 in contact with the electric body 542a and the conductor 542b are channel It has the same characteristics as the formation region, being type I. Also, conductor 542a and conductor The sides and periphery of the oxide 530 in contact with 542b are in contact with the insulator 544, therefore Similar to the channel-forming region, it can be type I. In this specification, type I is defined as described later. It can be treated similarly to high-purity genuine material. Furthermore, the S-chan disclosed in this specification, etc. The nel configuration is different from the Fin-type and Planar-type configurations. S-channel configuration By adopting this, resistance to short-channel effects is increased, or in other words, short-channel effects are reduced. This allows for the creation of transistors that are less prone to malfunction.

[0150] Furthermore, the conductor 503 has the same configuration as the conductor 518, and the insulator 514 and the insulator A conductor 503a is formed in contact with the inner wall of the opening 516, and a conductor 503b is further inside. It is formed. In transistor 500, conductor 503a and conductor 503b While a configuration in which these are stacked is shown, the present invention is not limited to this. For example, the conductor 503 may be provided as a single layer or as a laminated structure of three or more layers. stomach.

[0151] Here, the conductor 503a diffuses impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms. It is preferable to use a conductive material that has the function of suppressing (the above-mentioned impurities are less likely to permeate) It is difficult. Or, it inhibits the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable to use a conductive material that has the function of (being impermeable to the above-mentioned oxygen). In this specification, the function of suppressing the diffusion of impurities or oxygen means the above-mentioned impurities, and This function suppresses the diffusion of any one or all of the above-mentioned oxygen molecules.

[0152] For example, the conductor 503a has the function of suppressing the diffusion of oxygen, This can suppress the oxidation of b, which reduces its conductivity.

[0153] Furthermore, if the conductor 503 also functions as wiring, the conductor 503b may be tungsten or copper. Alternatively, it is preferable to use a highly conductive material, such as one primarily composed of aluminum. In this embodiment, the conductor 503 is shown as a laminate of conductor 503a and conductor 503b. However, the conductor 503 may have a single-layer configuration.

[0154] Insulators 520, 522, and 524 serve as a second gate insulating film. To have the ability.

[0155] Here, the insulator 524 in contact with the oxide 530 is more abundant than the oxygen that satisfies the stoichiometric composition. It is preferable to use an insulator containing oxygen. This oxygen is released from the film by heating. It is easily released. In this specification, the oxygen released by heating is sometimes referred to as "excess oxygen." In other words, the insulator 524 has a region containing excess oxygen (also called the "excess oxygen region"). It is preferably formed. By providing such an insulator containing excess oxygen in contact with the oxide 530, oxygen vacancies (V : also referred to as such) in the oxide 530 can be reduced, and the reliability of the transistor 500 can be improved. When hydrogen enters the oxygen vacancies in the oxide 530, the defect (hereinafter, may be referred to as V O :oxygen vacancy H) may function as a donor and electrons as carriers may be generated. Also, a part of hydrogen may combine with oxygen bonded to a metal atom to generate electrons as carriers. Therefore, a transistor using an oxide semiconductor containing a large amount of hydrogen tends to have a normally-on O characteristic. Also, since hydrogen in the oxide semiconductor is likely to move due to stresses such as heat and an electric field, if the oxide semiconductor contains a large amount of hydrogen, the reliability of the transistor may deteriorate. In one aspect of the present invention, it is preferable to reduce V H in the oxide 530 as much as possible and make it highly pure intrinsic or substantially highly pure intrinsic. Thus, in order to obtain an oxide semiconductor in which V H is sufficiently reduced, it is important to remove impurities such as moisture and hydrogen in the oxide semiconductor (also referred to as "dehydration" or "dehydrogenation treatment") and supply oxygen to the oxide semiconductor to fill oxygen vacancies (also referred to as "oxygen addition treatment"). Using an oxide semiconductor in which impurities such as V H are sufficiently reduced in the channel formation region of the transistor can impart stable electrical characteristics. Specifically, as the insulator having an excess oxygen region, an oxide that desorbs a part of oxygen by heating is used. O and reduce it as much as possible and make it highly pure intrinsic or substantially highly pure intrinsic. Thus, in order to obtain an oxide semiconductor in which V O H is sufficiently reduced, it is important to remove impurities such as moisture and hydrogen in the oxide semiconductor (also referred to as "dehydration" or "dehydrogenation treatment") and supply oxygen to the oxide semiconductor to fill oxygen vacancies (also referred to as "oxygen addition treatment"). Using an oxide semiconductor in which impurities such as V H are sufficiently reduced in the channel formation region of the transistor can impart stable electrical characteristics. to the oxide semiconductor to fill oxygen vacancies (also referred to as "oxygen addition treatment") is important. Using an oxide semiconductor in which impurities such as V H are sufficiently reduced in the channel formation region of the transistor can impart stable electrical characteristics. O H and the like is used in the channel formation region of the transistor, stable electrical characteristics can be imparted.

[0156] Specifically, as the insulator having an excess oxygen region, an oxide that desorbs a part of oxygen by heating It is preferable to use an oxide material. An oxide that desorbs oxygen by heating is an oxide film in which the amount of desorbed oxygen converted to oxygen atoms is 1.0×10 atoms / cm or more, preferably 1.0 18 ×10 3 atoms / cm or more, more preferably 2.0×10 19 atoms / cm 3 or more, and even more preferably 3.0×10 19 atoms / c m 3 or more, or 3.0×10 20 atoms / cm 3 or more. Note that , the surface temperature of the film during the above TDS analysis is preferably in the range of 100°C or higher and 700°C or lower, or 1 00°C or higher and 400°C or lower.

[0157] In addition, the insulator having the above excess oxygen region and the oxide 530 may be subjected to one or more of heat treatment, microwave treatment, or RF treatment in contact with each other. By performing this treatment, water or hydrogen in the oxide 530 can be removed. For example, in the oxide 530, a reaction occurs in which the bond of VoH is broken. In other words, a reaction of "V O H→Vo+ H" occurs, and dehydrogenation can occur. A part of the hydrogen generated at this time may be removed as H₂O by combining with oxygen from the oxide 530 or the insulator near the oxide 530 O . In addition, a part of the hydrogen may be gettered by the conductor 542 . .

[0158]

[0159] <……>

[0160]

[0161]

[0162]

[0163]

[0164] [[ID=1By using a gas containing elements and employing a high-density plasma, high-density oxygen radicals are generated. This can be achieved by applying RF to the substrate side, generating high-density plasma. Efficiently introduce oxygen radicals into oxide 530 or an insulator near oxide 530. This can be done. Furthermore, the above microwave treatment is performed at a pressure of 133 Pa or higher, preferably 200 Pa. The Pa should be Pa or higher, more preferably 400 Pa or higher. For example, oxygen and argon are used as gases introduced into the apparatus, with an oxygen flow rate ratio (O2 The process should be carried out with (O2+Ar) content of 50% or less, preferably between 10% and 30%.

[0159] Furthermore, during the manufacturing process of transistor 500, the surface of oxide 530 is exposed. Therefore, heat treatment is preferable. This heat treatment is, for example, 100°C to 450°C. More preferably, the heating should be carried out at a temperature of 350°C to 400°C. The heat treatment is performed using nitrogen gas. Alternatively, an inert gas atmosphere, or an oxidizing gas at 10 ppm or more, 1% or more, The procedure should be carried out in an atmosphere containing 10% or more of the substance. For example, heat treatment is preferably carried out in an oxygen atmosphere. This supplies oxygen to oxide 530, thus eliminating oxygen deficiency (V O ) can be reduced. Furthermore, the heat treatment may be carried out under reduced pressure. Alternatively, the heat treatment may be carried out under nitrogen gas or After heat treatment in an active gas atmosphere, an oxidizing gas is added at 10 pJ to replenish the desorbed oxygen. The procedure may be carried out in an atmosphere containing 1% or more of the substance, or 10% or more of the substance. Alternatively, an oxidizing gas may be used. After heat treatment in an atmosphere containing 10 ppm or more, 1% or more, or 10% or more, then continuously The heat treatment may be carried out in a nitrogen gas or inert gas atmosphere.

[0160] Furthermore, by performing an oxygenation treatment on oxide 530, the oxygen deficiencies in oxide 530 are supplied. The oxygen used for repair, or in other words, the reaction "Vo + O → null" is promoted. Furthermore, the oxygen supplied reacts with the hydrogen remaining in oxide 530. This allows the hydrogen to be removed as H2O (dehydrated). This eliminates oxidation. The hydrogen remaining in substance 530 recombines with the oxygen vacancy and V O Suppresses the formation of H It is possible.

[0161] Furthermore, if the insulator 524 has an excess oxygen region, the insulator 522 will have oxygen (for example, It has the function of suppressing the diffusion of oxygen atoms, oxygen molecules, etc. (making it difficult for the above-mentioned oxygen to permeate). This is preferable.

[0162] The insulator 522 has the function of suppressing the diffusion of oxygen and impurities, so the oxide 530 The oxygen present does not diffuse towards the insulator 520, which is preferable. Also, the conductor 503 This suppresses the reaction between the insulator 524 and the oxygen present in the oxide 530.

[0163] The insulator 522 is, for example, aluminum oxide, hafnium oxide, aluminum and Humium-containing oxides (hafnium aluminate), tantalum oxide, zirconium oxide, Lead zirconate titanate (PZT), strontium titanate (SrTiO3), or ( A single layer of insulator containing so-called high-k materials such as Ba,Sr)TiO3(BST) Alternatively, it is preferable to use them in a stacked configuration. As transistors become smaller and more integrated, Thinning the gate insulating film can sometimes lead to problems such as leakage current. By using a high-k material as an insulator that functions in this way, the physical film thickness is maintained while transforming This allows for a reduction in the gate voltage during DISTRO operation.

[0164] In particular, it has the function of suppressing the diffusion of impurities and oxygen (the above oxygen does not permeate easily). i) An insulator containing an oxide of either aluminum or hafnium, or both, which are insulating materials. It is recommended to use an insulator containing an oxide of either aluminum or hafnium, or both. aluminum oxide, hafnium oxide, and oxides containing aluminum and hafnium ( It is preferable to use materials such as hafnium aluminate. When 522 is formed, the insulator 522 prevents the release of oxygen from the oxide 530 and the transient It functions as a layer that suppresses the incorporation of impurities such as hydrogen from the peripheral area of ​​T500 into the oxide 530. ru.

[0165] Alternatively, these insulators may be, for example, aluminum oxide, bismuth oxide, germanium oxide. Umium, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, Zirconium oxide may be added. Alternatively, these insulators may be subjected to nitriding treatment. Silicon oxide, silicon oxide nitride, or silicon nitride may be laminated as the insulator. .

[0166] Furthermore, it is preferable that the insulator 520 is thermally stable. For example, silicon oxide Silicon oxide nitride is preferred because it is thermally stable. Also, high-k material By combining the insulator with silicon oxide or silicon oxide nitride, thermal stability can be achieved. This makes it possible to obtain an insulator 520 with a multilayer structure that has a high relative permittivity.

[0167] Note that the transistor 500 in Figures 12A and 12B has a three-layer stacked structure. Insulators 520, 522, and 524 are shown as gate insulating films of the 2. However, the second gate insulating film has a single-layer, two-layer, or four-layer or more stacked structure. In that case, the laminated structure is not limited to one made of the same material, but can also be made of different materials. "Natural" is also acceptable.

[0168] Transistor 500 is an oxide semiconductor in oxide 530 including a channel formation region. A functional metal oxide is used. The oxide semiconductor is made of at least one of In or Zn. It is preferable that it contains. For example, as oxide 530, In-M-Zn oxide (element M stands for aluminum, gallium, yttrium, copper, vanadium, beryllium, boron. Titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium Selected from neodymium, hafnium, tantalum, tungsten, or magnesium, etc. It is preferable to use one or more types of metal oxides.

[0169] The formation of metal oxides that function as oxide semiconductors may be carried out by sputtering. Alternatively, the Atomic Layer Deposition (ALD) method may be used. The metal oxides that function as oxide semiconductors will be described in detail in other embodiments. do.

[0170] Furthermore, the metal oxide that functions as a channel-forming region in oxide 530 is band It is preferable to use a gap of 2 eV or more, preferably 2.5 eV or more. As shown above, by using metal oxides with a large band gap, the off-current of the transistor can be reduced. It can be reduced.

[0171] Oxide 530 has oxide 530a beneath oxide 530b, so oxide 530a The diffusion of impurities from the components formed below to oxide 530b is suppressed. can.

[0172] Furthermore, oxide 530 has a structure consisting of multiple oxide layers with different atomic ratios of each metal atom. This is preferable. Specifically, in the metal oxide used for oxide 530a, among the constituent elements The atomic ratio of element M in the metal oxide used in oxide 530b is the element among the constituent elements. It is preferable that the atomic ratio of M is greater than that of the metal oxide used in oxide 530a. In this context, the atomic ratio of element M to In is the same as that of the metal oxide used in oxide 530b. It is preferable that the atomic ratio of element M to In is greater than that of In. Also, when used in oxide 530b In the metal oxides, the atomic ratio of In to element M is the same as that of the gold used in oxide 530a. It is preferable that the atomic ratio of In to element M in the group oxide is greater than that of In.

[0173] Furthermore, the energy at the lower end of the conduction band of oxide 530a is equal to the energy at the lower end of the conduction band of oxide 530b. It is preferable that it be higher than the energy. In other words, the electron affinity of oxide 530a. However, it is preferable that it is smaller than the electron affinity of oxide 530b.

[0174] Here, at the junction of oxide 530a and oxide 530b, the energy at the lower end of the conduction band The Ghee level changes smoothly. In other words, the junction of oxide 530a and oxide 530b The energy levels at the lower end of the conduction band at the junction are said to change continuously or form a continuous junction. This can be done. In order to do this, at the interface between oxide 530a and oxide 530b It is desirable to lower the defect level density of the mixed layer that is formed.

[0175] Specifically, oxides 530a and 530b have a common element other than oxygen (main By using it as a component, a mixed layer with a low defect level density can be formed. For example, oxidation If substance 530b is an In-Ga-Zn oxide, then oxide 530a is In-Ga-Zn Oxides, Ga-Zn oxide, and gallium oxide are good choices to use.

[0176] In this case, the main carrier pathway is oxide 530b. Oxide 530a is constructed as described above. By doing so, the defect level density at the interface between oxide 530a and oxide 530b is reduced. This makes it possible. Therefore, the influence of interfacial scattering on carrier conduction is reduced, and traction The 500 inverter can achieve high on-current.

[0177] On the oxide 530b are conductors 542, which function as source and drain electrodes. a and conductor 542b are provided. It is aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum Tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium Nium, beryllium, indium, ruthenium, iridium, strontium, lanthanum A metal element selected from the above, or an alloy containing the above metal elements, or the above metal elements It is preferable to use an alloy that combines these elements. For example, tantalum nitride, titanium nitride, t sten, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum , ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum It is preferable to use oxides containing nitriding and nickel. Also, tantalum nitride, titanium nitride Titanium nitrides containing titanium and aluminum, tantalum nitrides containing tantalum and aluminum, oxides Thenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel Oxides containing Kel are conductive materials that are resistant to oxidation, or that maintain their conductivity even after absorbing oxygen. It is preferable because it is a material that does so. Furthermore, metal nitride films such as tantalum nitride are hydrogen or It is preferable because it has barrier properties against oxygen.

[0178] Furthermore, in Figure 12A, the conductors 542a and 542b are shown as single-layer structures. However, a laminated structure of two or more layers is also possible. For example, a tantalum nitride film and a tungsten film can be laminated. This is a good idea. Alternatively, a titanium film and an aluminum film may be laminated. Also, a tungsten film may be used. A two-layer structure with an aluminum film laminated on top, and copper on a copper-magnesium-aluminum alloy film. Two-layer structure with stacked films, two-layer structure with a copper film stacked on a titanium film, copper film on a tungsten film A two-layer structure with stacked layers is also possible.

[0179] Furthermore, a titanium film or titanium nitride film, and a layer on top of the titanium film or titanium nitride film. A luminium film or copper film is laminated, and then a titanium film or titanium nitride film is formed on top of it. A three-layer structure consisting of a molybdenum film or molybdenum nitride film, and the molybdenum film or molybdenum nitride film. An aluminum film or copper film is laminated on top of the butene film, and then a molybdenum film is laid on top of that. Alternatively, there are three-layer structures that form a molybdenum nitride film. Furthermore, indium oxide, tin oxide, and A transparent conductive material containing zinc oxide may also be used.

[0180] Furthermore, as shown in Figure 12A, the oxide 530 has conductor 542a (conductor 542b) and At the interface and its vicinity, regions 543a and 543b are formed as low-resistance regions. In some cases, this may occur. In this case, region 543a may be either the source region or the drain region. It functions, and region 543b functions as either the source region or the drain region. A channel-forming region is formed in the region sandwiched between region 543a and region 543b.

[0181] By providing the conductor 542a (conductor 542b) in contact with the oxide 530, The oxygen concentration in region 543a (region 543b) may decrease. Also, region 543a ( In region 543b), the metal contained in conductor 542a (conductor 542b) and oxide 530 A metal compound layer containing the component may be formed. In such cases, region 543a (region The carrier density in region 543b increases, and region 543a (region 543b) becomes a low-resistance region. Yes.

[0182] The insulator 544 is provided so as to cover the conductors 542a and 542b, and is conductive The oxidation of body 542a and conductor 542b is suppressed. At this time, the insulator 544 is oxidized. It may be provided so as to cover the side of object 530 and be in contact with the insulator 524.

[0183] Insulator 544 includes hafnium, aluminum, gallium, yttrium, and zirconium. Umium, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum Alternatively, a metal oxide containing one or more metals selected from magnesium, etc., may be used. It can be. Also, as insulator 544, silicon nitride or silicon nitride It can be used in any way.

[0184] In particular, as insulator 544, an oxide of either aluminum or hafnium or both Insulators containing materials, such as aluminum oxide, hafnium oxide, aluminum, and haf It is preferable to use an oxide containing nium (such as hafnium aluminate). In particular, Hafnium aluminate has higher heat resistance than hafnium oxide film. Therefore, in subsequent processes... In heat treatment, it is preferable because it does not easily crystallize. Note that conductor 542a and conductive Body 542b is a material that is oxidation-resistant, or whose conductivity does not significantly decrease even when it absorbs oxygen. In some cases, the insulator 544 is not an essential component. Depending on the desired transistor characteristics, it can be configured as appropriate. Just calculate it.

[0185] The presence of the insulator 544 allows water and other impurities such as hydrogen contained in the insulator 580 to be absorbed. Diffusion to oxide 530b via insulator 545 can be suppressed. The excess oxygen present in the insulator 580 can suppress the oxidation of the conductor 560. ru.

[0186] The insulator 545 functions as the first gate insulating film. The insulator 545 is the insulating film as described above. Similar to body 524, an insulator that contains an excess of oxygen and releases oxygen upon heating is used. It is preferable to form it.

[0187] Specifically, silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon oxide containing excess oxygen silicon dioxide, silicon oxide with added fluorine, silicon oxide with added carbon, carbon, Silicon oxide with added nitrogen and porous silicon oxide can be used. Furthermore, silicon oxide and silicon oxide-nitride are preferred because they are stable to heat.

[0188] By providing an insulator containing excess oxygen as insulator 545, acid is released from insulator 545. It can effectively supply oxygen to the channel-forming region of compound 530b. Also, an insulator Similar to 524, the concentration of impurities such as water or hydrogen in the insulator 545 is reduced. Preferably, the film thickness of the insulator 545 is 1 nm or more and 20 nm or less.

[0189] Furthermore, in order to efficiently supply the excess oxygen contained in the insulator 545 to the oxide 530, A metal oxide may be provided between the edge 545 and the conductor 560. The metal oxide is an insulating material. It is preferable to suppress oxygen diffusion from body 545 to conductor 560. By providing a metal oxide, the diffusion of excess oxygen from the insulator 545 to the conductor 560 is suppressed. This means that the decrease in the amount of excess oxygen supplied to oxide 530 can be suppressed. Furthermore, oxidation of the conductor 560 due to excess oxygen can be suppressed. For the insulator 544, any material suitable for use in the insulator 544 may be used.

[0190] Furthermore, the insulator 545 may be in a laminated configuration, similar to the second gate insulating film. As DISTRS become smaller and more highly integrated, the gate insulating film becomes thinner, reducing leakage current. Because any of these problems may occur, the insulator that acts as the gate insulating film is high-k By creating a laminated structure of one material and a thermally stable material, the physical film thickness is maintained while... This allows for a reduction in gate voltage during transistor operation. Furthermore, it offers thermal stability and a high dielectric constant. A laminated structure can be formed.

[0191] The conductor 560, which functions as the first gate electrode, has a two-layer structure in Figures 12A and 12B. Although shown as a single-layer structure, it may also be a laminated structure of three or more layers.

[0192] Conductor 560a contains hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules. Conductive material (such as N2O, NO, NO2, etc.) has the function of suppressing the diffusion of impurities such as copper atoms. It is preferable to use a material with low oxygen content. Alternatively, a small amount of oxygen (for example, oxygen atoms, oxygen molecules, etc.) It is preferable to use a conductive material that has the function of suppressing the diffusion of (1). Conductor 5 Because 60a has the function of suppressing oxygen diffusion, the oxygen contained in the insulator 545 This suppresses the oxidation of the conductor 560b and the resulting decrease in conductivity. Examples of conductive materials that have the function of suppressing dispersion include tantalum, tantalum nitride, and luteinizing agent. It is preferable to use nium or ruthenium oxide. Also, the conductor 560a is used. Therefore, an oxide semiconductor applicable to oxide 530 can be used. In that case, conductor 5 By depositing 60b using the sputtering method, the electrical resistance of the conductor 560a is reduced. It can be made into a conductor. This is called an OC (Oxide Conductor) electrode. It is possible.

[0193] Furthermore, the conductive material 560b is a conductive material whose main components are tungsten, copper, or aluminum. It is preferable to use a conductive material. Also, since the conductive material 560b also functions as wiring, It is preferable to use a highly conductive material. For example, tungsten, copper, or aluminum. A conductive material mainly composed of nium can be used. In addition, the conductive material 560b has a laminated structure. It may also be a laminated structure of titanium or titanium nitride and the above conductive material. good.

[0194] The insulator 580 is connected to the conductors 542a and 542b via the insulator 544. It is provided. The insulator 580 preferably has an excess oxygen region. For example, insulator 5 As 80, silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride, fluorine silicon oxide with added nitrogen, silicon oxide with added carbon, carbon, and nitrogen Preferably, it has silicon oxide, porous silicon oxide, or a resin. In particular, silicon oxide and silicon oxide-nitride are preferred because they are thermally stable. Silicon oxide, including porous silicon oxide, readily forms excess oxygen regions in subsequent processes. This is preferable because it allows for this.

[0195] The insulator 580 preferably has an excess oxygen region. Oxygen is released upon heating. By providing the insulator 580, oxygen in the insulator 580 is efficiently supplied to the oxide 530. This is possible. Furthermore, the concentration of impurities such as water or hydrogen in the insulator 580 is reduced. It is preferable to do so.

[0196] The opening in the insulator 580 is formed superimposed on the region between the conductor 542a and the conductor 542b. This allows the conductor 560 to communicate with the opening of the insulator 580 and the conductor 542a. It is formed so as to be embedded in the region sandwiched between body 542b.

[0197] When miniaturizing semiconductor devices, it is necessary to shorten the gate length, but the conductor 5 It is necessary to prevent the conductivity of 60 from decreasing. To that end, the film thickness of conductor 560 is increased. As a result, the conductor 560 can have a shape with a high aspect ratio. In this embodiment, In order to embed the body 560 into the opening of the insulator 580, the conductor 560 is aspect ratio Even when forming a shape with a high ratio, it is possible to form the conductive material 560 without causing it to collapse during the process. Cut.

[0198] The insulator 574 is located on the upper surface of the insulator 580, the upper surface of the conductor 560, and the upper surface of the insulator 545. It is preferable that it be provided in contact with the surface. The insulator 574 is deposited by sputtering. This allows for the creation of excess oxygen regions in insulators 545 and 580. Therefore, oxygen can be supplied to the oxide 530 from the excess oxygen region.

[0199] For example, as insulator 574, hafnium, aluminum, gallium, yttrium, Zirconium, tungsten, titanium, tantalum, nickel, germanium, or magnesium It is possible to use metal oxides containing one or more types of metals selected from nesium, etc. Cut.

[0200] In particular, aluminum oxide has high barrier properties and is suitable for thin films of 0.5 nm to 3.0 nm. However, the diffusion of hydrogen and nitrogen can be suppressed. Therefore, sputtering The aluminum oxide film formed by this method serves as an oxygen source and also acts as a barrier against impurities such as hydrogen. It can also function as a membrane.

[0201] Furthermore, it is preferable to provide an insulator 581 that functions as an interlayer film on top of the insulator 574. i. Insulator 581, like insulator 524, has an impurity concentration of water or hydrogen in the film. It is preferable that this is reduced.

[0202] Furthermore, the insulators 581, 574, 580, and 544 are formed Conductors 540a and 540b are placed in the opening. Body 540b is provided opposite the conductor 560, with the conductor 540a and conductor 54 0b has the same configuration as conductors 546 and 548, which will be described later.

[0203] An insulator 582 is provided on the insulator 581. The insulator 582 is designed to absorb oxygen and hydrogen. In contrast, it is preferable to use a barrier material. Therefore, the insulator 582 is an insulating material. The same material as the edge 514 can be used. For example, aluminum oxide can be used for the insulator 582. It is preferable to use metal oxides such as nium, hafnium oxide, and tantalum oxide.

[0204] In particular, aluminum oxide is a source of oxygen and water, which can cause variations in the electrical properties of transistors. It has a high barrier effect that prevents both elements and impurities such as water from passing through the membrane. Therefore, Aluminum oxide is affected by hydrogen, moisture, etc. during and after the transistor fabrication process. This prevents impurities from entering transistor 500. The release of oxygen from the oxides that make up 00 can be suppressed. Therefore, the transient It is suitable for use as a protective film for Ta500.

[0205] Furthermore, an insulator 586 is provided on the insulator 582. The insulator 586 is an insulator Similar materials to 320 can be used. In addition, these insulators have a relatively low dielectric constant. By applying a suitable material, parasitic capacitance between wires can be reduced. For example, As the edge element 586, silicon oxide film or silicon oxide nitride film can be used.

[0206] Also, insulator 520, insulator 522, insulator 524, insulator 544, insulator 580, The edge 574, insulator 581, insulator 582, and insulator 586 contain a conductor 546, Conductors such as 548 are embedded within it.

[0207] Conductors 546 and 548 are connected to the capacitive element 600, the transistor 500, or It functions as a plug or wiring for connecting to transistor 550. Conductor 546 , and conductor 548 are provided using the same material as conductor 328 and conductor 330. It is possible.

[0208] Furthermore, after the formation of the transistor 500, an opening is formed to surround the transistor 500. An insulator with high barrier properties against hydrogen or water may be formed to cover the opening. By encasing the transistor 500 in the aforementioned highly barrier-type insulator, moisture from the outside is prevented... And it can prevent hydrogen from entering. Or, multiple transistors 500 They may be encapsulated together in an insulator with high barrier properties against hydrogen or water. When forming an opening to surround the transistor 500, for example, an insulator 522 or an insulator An opening is formed that reaches 514, and the above-mentioned bar is made to contact the insulator 522 or the insulator 514. By forming a highly reflective insulator, it can also serve as part of the manufacturing process for transistor 500. Therefore, it is suitable. Furthermore, an insulator with high barrier properties against hydrogen or water is, for example, Alternatively, the same material as insulator 522 or insulator 514 may be used.

[0209] Next, a capacitive element 600 is provided above the transistor 650. 600 comprises a conductor 610, a conductor 620, and an insulator 630.

[0210] Furthermore, a conductor 612 may be provided on the conductor 546 and the conductor 548. 612 functions as a plug or wire connecting to transistor 500. The electric element 610 functions as an electrode for the capacitive element 600. Furthermore, the conductor 612, and The conductor 610 can be formed in the same process.

[0211] Conductors 612 and 610 contain molybdenum, titanium, tantalum, and tungsten. Metal film containing elements selected from aluminum, copper, chromium, neodymium, and scandium. , or metal nitride films containing the above-mentioned elements (tantalum nitride film, titanium nitride film, nitride film) Molybdenum film, tungsten nitride film, etc. can be used. Alternatively, indium stinic acid Indium oxides containing tungsten oxide, indium oxides containing tungsten oxide, indium tungsten oxide Lead oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, Conductive materials such as indium zinc oxide and indium tin oxide with added silicon oxide It can also be applied.

[0212] In this embodiment, the conductor 612 and the conductor 610 are shown in a single-layer configuration, but The structure is not limited to a single layer, and may consist of two or more layers. For example, a conductive material with barrier properties and a conductive material. A conductor with barrier properties between a highly conductive material and a highly conductive material. A conductive material with high adhesion may be formed.

[0213] The conductor 620 is provided so as to overlap with the conductor 610 via the insulator 630. The conductor 620 uses a conductive material such as a metal material, alloy material, or metal oxide material. High-melting-point materials such as tungsten and molybdenum that offer both heat resistance and conductivity. It is preferable to use a conductor, and it is particularly preferable to use tungsten. When formed using the same process as other components, low-resistance metal materials such as Cu (copper) and Al (aluminum) are used. You can use something like nium.

[0214] An insulator 640 is provided on the conductor 620 and the insulator 630. 40 can be provided using the same material as the insulator 320. Also, the insulator 640 is It may also function as a planarizing film that covers the uneven shape below it.

[0215] By using this configuration, semiconductor devices using transistors with oxide semiconductors This allows for miniaturization or high integration.

[0216] Substrates that can be used in a semiconductor device according to one aspect of the present invention include glass substrates and quartz substrates. Plates, sapphire substrates, ceramic substrates, metal substrates (e.g., stainless steel substrates, etc.) Substrates with stainless steel foil, tungsten substrates, and tungsten foil (such as substrates), semiconductor substrates (for example, single-crystal semiconductor substrates, polycrystalline semiconductor substrates, or chemical SOI (Silicon on Insulator) substrates (such as composite semiconductor substrates) A plate or the like can be used. Furthermore, it has heat resistance capable of withstanding the processing temperature of this embodiment. A plastic substrate may also be used. An example of a glass substrate is barium borosilicate glass. Glass, aluminosilicate glass, or aluminoborosilicate glass, or soda glass Examples include solid glass. Other materials such as crystallized glass can also be used.

[0217] Alternatively, the substrate may be a flexible substrate, a laminated film, paper containing fibrous material, A base film can be used. Flexible substrate, laminated film, base film Examples of materials include the following: For example, polyethylene terephthalate. PET, polyethylene naphthalate (PEN), polyethersulfone (PES) ), there are plastics such as polytetrafluoroethylene (PTFE). One example is synthetic resins such as acrylic. Alternatively, another example is polypropylene. Examples include polyester, polyvinyl fluoride, or polyvinyl chloride. Examples include polyamide, polyimide, aramid resin, epoxy resin, and inorganic vapor-deposited film. These include, or paper products. In particular, semiconductor substrates, single crystal substrates, or SOI substrates are used. By manufacturing transistors in this way, variations in characteristics, size, or shape are minimized. This allows for the manufacture of transistors with high current capacity and small size. Using transistors to construct a circuit allows for lower power consumption or higher circuit integration. It is possible to measure this.

[0218] Furthermore, a flexible substrate is used as the base, and transistors, resistors, etc. are directly mounted on the flexible substrate. A rifling and / or capacitance may be formed. Alternatively, a substrate, a transistor, a resistor, and / Alternatively, a release layer may be provided between the capacitors, etc. The release layer is partially supported by the semiconductor device. After all the components are completed, they can be separated from the circuit board and used to transfer them to other circuit boards. In this case, transistors, resistors, and / or capacitors are placed on substrates with poor heat resistance or flexible substrates. It can also be mounted on the substrate. Furthermore, the aforementioned release layer may include, for example, a tungsten film and silica oxide. The structure involves a laminated configuration of an inorganic film with an organic film, or a structure in which an organic resin film such as polyimide is formed on a substrate. For example, a silicon film containing hydrogen can be used.

[0219] In other words, a semiconductor device is formed on one substrate, and then the semiconductor device is transferred to another substrate. This is also acceptable. An example of a substrate on which a semiconductor device is placed is the substrate on which the transistor described above is formed. In addition to substrates that can be used, paper substrates, cellophane substrates, aramid film substrates, and polyimide substrates are also available. Film substrates, stone substrates, wood substrates, fabric substrates (natural fibers (silk, cotton, linen), synthetic fibers (nylon) (Ron, polyurethane, polyester) or regenerated fibers (acetate, cupro, rayon) These include recycled polyester, leather substrates, or rubber substrates. By using a substrate, it is possible to manufacture flexible semiconductor devices and durable semiconductor devices. It can be constructed to provide heat resistance, reduce weight, or make the material thinner.

[0220] By mounting the semiconductor device on a flexible substrate, the increase in weight can be suppressed and damage can be minimized. We can provide a semiconductor device.

[0221] <Transistor Variation 1> The transistor 500A shown in Figures 13A to 13C has the configuration shown in Figures 12A and 12B. This is a modified version of transistor 500. Figure 13A is a top view of transistor 500A. Figure 13B is a cross-sectional view of transistor 500A in the channel length direction, and Figure 13C is a cross-sectional view of transistor 500A. This is a cross-sectional view of the ZISTA 500A in the channel width direction. Note that in the top view of Figure 13A, the brightness of the figure is For clarity, some elements have been omitted from the description. The configuration is shown in Figures 13A to 13C. This also applies to other transistors in the semiconductor device according to one aspect of the present invention, such as transistor 550. It can be applied.

[0222] The transistor 500A shown in Figures 13A to 13C consists of insulator 552, insulator 513, And having an insulator 404, the transistor 500 has the configuration shown in Figures 12A and 12B. This is different. Also, transistor 500A is in contact with the side surface of conductor 540a and insulator 552 A transistor is provided, and an insulator 552 is provided in contact with the side surface of the conductor 540b. It differs from the 500. Furthermore, the transistor 500A does not have an insulator 520. It is different from the Ranjista 500.

[0223] The transistor 500A, as shown in Figures 13A to 13C, has an insulator on the insulator 512. 513 is provided. In addition, an insulator 404 is provided on the insulator 574 and on the insulator 513. It gets kicked.

[0224] In the transistor 500A with the configuration shown in Figures 13A to 13C, insulator 514, insulator 516, insulator 522, insulator 524, insulator 544, insulator 580, and insulator 57 The patterned area 4 is covered by an insulator 404. Insulator 404 is located on the top surface of insulator 574, the side surface of insulator 574, the side surface of insulator 580, and the insulation Side of body 544, side of insulator 524, side of insulator 522, side of insulator 516, insulation It is in contact with the side surface of body 514 and the top surface of insulator 513, respectively. As a result, oxide 530, etc. It is isolated from the outside by insulators 404 and 513.

[0225] Insulators 513 and 404 contain hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). It is preferable that the insulator 51 has a high function of suppressing the diffusion of water molecules. 3 and insulator 404 are materials with high hydrogen barrier properties, such as silicon nitride or nitride It is preferable to use silicon oxide. This allows hydrogen and other elements to diffuse into the oxide 530. Since this can be suppressed, the degradation of the characteristics of the 500A transistor can be suppressed. This can improve the reliability of a semiconductor device according to one aspect of the present invention.

[0226] Insulator 552 is insulator 581, insulator 404, insulator 574, insulator 580, and It is provided in contact with the insulator 544. The insulator 552 suppresses the diffusion of hydrogen or water molecules. It is preferable that the material has a function. For example, the insulator 552 may be a material with high hydrogen barrier properties. Using an insulator such as silicon nitride, aluminum oxide, or silicon nitride oxide. Preferably, silicon nitride is a material with high hydrogen barrier properties, so insulator 55 It is preferable to use it as 2. Use a material with high hydrogen barrier properties as the insulator 552. As a result, impurities such as water or hydrogen are transferred from the insulator 580 to the conductor 540a and conductor 5 Diffusion to oxide 530 through 40b can be suppressed. Also, insulator 58 This suppresses the absorption of oxygen contained in 0 by conductors 540a and 540b. This makes it possible to improve the reliability of a semiconductor device according to one aspect of the present invention.

[0227] <Transistor Variation 2> An example configuration of transistor 500B will be explained using Figures 14A, 14B, and 14C. Figure 14A is a top view of transistor 500B. Figure 14B is the same as Figure 14A but with a dashed line. This is a cross-sectional view of the L1-L2 region shown in Figure 14A. Figure 14C shows the W1-W region shown by the dashed line in Figure 14A. These are cross-sectional views of two parts. Note that in the top view of Figure 14A, some elements have been modified for clarity. Details have been omitted.

[0228] Transistor 500B is a modified version of transistor 500, and is a modified version of transistor 500. It is a replaceable transistor. Therefore, to avoid repeating the explanation, mainly the transistor Let me explain the differences from the Ta500.

[0229] The conductor 560, which functions as the first gate electrode, is composed of conductor 560a and conductor 56 It has a conductor 560b on 0a. The conductor 560a consists of hydrogen atoms, hydrogen molecules, water molecules, and copper. It is preferable to use a conductive material that has the function of suppressing the diffusion of impurities such as atoms. Alternatively, it may have a function that inhibits the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable to use a conductive material.

[0230] The conductor 560a has the function of suppressing oxygen diffusion, thus affecting the material of conductor 560b. Selectivity can be improved. In other words, by having the conductor 560a, the conductor 560 The oxidation of b is suppressed, preventing a decrease in conductivity.

[0231] Furthermore, the insulator 54 covers the top and side surfaces of the conductor 560 and the side surfaces of the insulator 545. It is preferable to provide 4. Note that the insulator 544 is free from impurities such as water or hydrogen, and It is preferable to use an insulating material that has the function of suppressing oxygen diffusion. For example, aluminum oxide It is preferable to use magnesium oxide or hafnium oxide. In addition, for example, magnesium oxide is also preferable. Nesium, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, acid Metal oxides such as lanthanum oxide, neodymium oxide or tantalum oxide, silicon nitride or Silicon nitride and other materials can be used.

[0232] By providing the insulator 544, oxidation of the conductor 560 can be suppressed. The presence of the edge body 544 allows impurities such as water and hydrogen present in the insulator 580 to be transmitted. This can suppress diffusion to the ZISTA 500B.

[0233] Transistor 500B has conductor 56 in part of conductor 542a and part of conductor 542b. Because of the overlapping zeros, the parasitic capacitance tends to be larger than that of transistor 500. Therefore, Compared to the 500, the operating frequency tends to be lower. However, the insulator 580 Since there is no need to create openings in such parts and embed conductors 560 and insulators 545, It offers higher productivity compared to the Transistor 500.

[0234] The configurations, structures, and methods shown in this embodiment may differ from those shown in other embodiments. It can be used in appropriate combination with other methods, etc.

[0235] (Embodiment 4) This embodiment describes an oxide semiconductor, which is a type of metal oxide.

[0236] The metal oxide preferably contains at least indium or zinc. In particular, indium It is preferable to include aluminum and zinc. In addition to these, aluminum, gallium, It is preferable that it contains yttrium, tin, etc. Also, boron, silicon, titanium Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, Selected from odymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. It may contain one or more types.

[0237] <Classification of crystal structures> First, we will explain the classification of crystal structures in oxide semiconductors using Figure 15A. Figure 15A shows an oxide semiconductor, typically IGZO (containing In, Ga, and Zn). This is a diagram illustrating the classification of the crystal structures of oxides.

[0238] As shown in Figure 15A, oxide semiconductors can be broadly classified into "Amorphous" )」 and 「Crystalline」 and 「Crystal」 and, It is classified. Also, within "Amorphous," there are completely amor It includes phous. Also, within "Crystalline" there is CAAC(ca xis-aligned crystalline), nc(nanocrystall This includes ine, and CAC (cloud-aligned composite). (excluding single crystal and poly crys tal). Note that the classification of "Crystalline" includes single crystal l, polycrystalline, and completely amorphous are excluded. It will be. Also, within "Crystal," there is single crystal, and p Contains oly crystal.

[0239] The structures within the thick frame shown in Figure 15A are "Amorphous" and "Cr It is an intermediate state between "crystal" and a new boundary region (New crystal This structure belongs to the (linear phase). In other words, this structure is energetically It is completely different from the unstable "Amorphous" or "Crystal" forms. This can be rephrased as a structure.

[0240] The crystal structure of the film or substrate can be determined by X-ray diffraction (XRD). It can be evaluated using the ion spectrum. Here, "Crystalline GIXD (Grazing-Incidence) of CAAC-IGZO film, which is classified as " The XRD spectrum obtained by the XRD measurement is shown in Figure 15B. Note that the GIXD method is thin Also known as the membrane method or Seemann-Bohlin method. Hereafter, the GIXD measurement shown in Figure 15B will be used. The XRD spectrum obtained at a constant temperature is simply referred to as the XRD spectrum. (See Figure 15B.) The composition of the CAAC-IGZO film is approximately In:Ga:Zn = 4:2:3 [atomic ratio]. Furthermore, the thickness of the CAAC-IGZO film shown in Figure 15B is 500 nm.

[0241] As shown in Figure 15B, the XRD spectrum of the CAAC-IGZO film shows clear crystallinity. A peak indicating this is detected. Specifically, in the XRD spectrum of the CAAC-IGZO film... A peak indicating c-axis orientation is detected near 2θ = 31°. As shown in Figure 15B... The peak near 2θ=31° is the angle at which peak intensity was detected. It is asymmetrical with respect to the axis.

[0242] Furthermore, the crystal structure of the film or substrate is determined by nano-beam diffraction (NBED). Diffraction patterns observed by electron diffraction (extremely small) It can be evaluated by (also called electron diffraction pattern). The folding pattern is shown in Figure 15C. Figure 15C shows an NB with an electron beam incident parallel to the substrate. This is the diffraction pattern observed by ED. Note that the CAAC-IGZO shown in Figure 15C is also shown. The film composition is approximately In:Ga:Zn=4:2:3 [atomic ratio]. Furthermore, a microelectron beam was used. In diffraction, electron diffraction is performed with a probe diameter of 1 nm.

[0243] As shown in Figure 15C, the diffraction pattern of the CAAC-IGZO film shows a complex c-axis orientation. A number of spots are observed.

[0244] <<Oxide semiconductor structure>> Note that oxide semiconductors may be classified differently from those shown in Figure 15A when considering their crystal structure. For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. It can be divided into conductors and non-single-crystal oxide semiconductors, for example, the aforementioned CAAC-OS , and nc-OS. In addition, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, pseudo Amorphous-like oxide semiconductor (a-like OS) This includes materials such as (e) semiconductors and amorphous oxide semiconductors.

[0245] Here, we will discuss the details of the CAAC-OS, nc-OS, and a-like OS mentioned above. Then, I will give an explanation.

[0246] [CAAC-OS] CAAC-OS has multiple crystalline regions, and these multiple crystalline regions have their c-axis oriented in a specific direction. It is an oriented oxide semiconductor. The specific direction refers to the thickness direction of the CAAC-OS film. , in the direction normal to the surface on which the CAAC-OS film is formed, or in the direction normal to the surface of the CAAC-OS film Yes, there is. Furthermore, a crystalline region is a region in which the atomic arrangement has periodicity. Note that the atomic arrangement is categorized If considered as a child arrangement, a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC- OS has a region in which multiple crystal regions are connected in the ab-plane direction, and this region is strained It may have strain. Note that strain refers to the lattice arrangement in a region where multiple crystal regions are connected. The orientation of the grid arrangement changes between a region with aligned grids and another region with aligned grids. This refers to the location. In other words, CAAC-OS is c-axis oriented and has a clear orientation in the ab-plane direction. It is an oxide semiconductor that does not exist.

[0247] Each of the above multiple crystalline regions is composed of one or more minute crystals (with a maximum diameter of 10 It is composed of crystals smaller than nm. The maximum diameter of the crystalline region is less than 10 nm. Furthermore, the crystalline region is composed of numerous tiny crystals. If this occurs, the size of the crystalline region may be around several tens of nanometers.

[0248] Also, In-M-Zn oxide (element M is aluminum, gallium, yttrium, sulfite) In one or more types selected from materials such as titanium, CAAC-OS is an indicator. A layer containing um (In) and oxygen (hereinafter referred to as the In layer), and elements M, zinc (Zn), and A layered crystalline structure (layered structure and) is formed by stacking layers containing oxygen (hereinafter referred to as (M,Zn) layers) and oxygen. It tends to have (also known as) indium and element M are mutually substitutable. The (M,Zn) layer may contain indium. Also, the In layer contains element M. It may be included. Note that the In layer may also contain Zn. The layered structure is an example. For example, it is observed as a grid pattern in high-resolution TEM images.

[0249] For example, when structural analysis of a CAAC-OS film is performed using an XRD device, the θ / 2θ scale is obtained. Out-of-plane XRD measurements using the CANR showed two peaks indicating c-axis orientation. It is detected at θ=31° or nearby. Note that the position of the peak indicating c-axis orientation (value of 2θ) ) may vary depending on the type and composition of the metal elements that make up CAAC-OS.

[0250] Furthermore, for example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots (spots) (T) is observed. Note that one spot and another spot are separated by the incident electron beam that has passed through the sample. With the spot (also called the direct spot) as the center of symmetry, observations are made at point-symmetric positions. It can be done.

[0251] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is a hexagonal lattice. While this is the basic principle, the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, The above distortion may have a grid arrangement such as a pentagon or heptagon. -In OS, clear grain boundaries were confirmed even near the strain. This is not possible. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This indicates that CAAC-OS has a dense arrangement of oxygen atoms in the ab-plane direction. This is because, for example, the substitution of metal atoms changes the bond distance between atoms. This is thought to be because it allows for distortion to be tolerated.

[0252] Furthermore, a crystal structure in which clear grain boundaries can be observed is known as a polycrystalline structure. It is called al(al). The grain boundaries become recombination centers, trapping carriers and forming transistors. This is likely to cause a decrease in on-current and a decrease in field-effect mobility. CAAC-OS, which lacks visible grain boundaries, has a crystal structure suitable for the semiconductor layer of transistors. It is one of the crystalline oxides that possesses Zn. Furthermore, CAAC-OS requires the presence of Zn. A configuration in which In-Zn oxide and In-Ga-Zn oxide are preferred. It is preferable because it can suppress the generation of grain boundaries more effectively than oxides.

[0253] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less prone to a decrease in electron mobility caused by grain boundaries. Furthermore, the crystallinity of oxide semiconductors can decrease due to impurities and the formation of defects. Because of this, CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen vacancies) It can also be said that oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat-resistant and highly reliable. C-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors expands the degree of freedom in the manufacturing process. It becomes possible to increase the risk.

[0254] [nc-OS] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially regions larger than 1 nm). It has periodicity in the atomic arrangement in the region of 3 nm or less. In other words, nc-OS is micro It has small crystals. The size of these minute crystals is, for example, between 1 nm and 10 nm. In particular, because they are between 1 nm and 3 nm in size, these minute crystals are also called nanocrystals. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, the entire film... No orientation is observed. Therefore, nc-OS is a-like depending on the analytical method. It can sometimes be indistinguishable from OS or amorphous oxide semiconductors. For example, compared to nc-OS films When performing structural analysis using an XRD device, out-of-pl using θ / 2θ scans is obtained. In ane XRD measurements, no peak indicating crystallinity was detected. Furthermore, for nc-OS films... Furthermore, electron beam blasts using electron beams with probe diameters larger than those of nanocrystals (e.g., 50 nm or more) When diffraction (also called limited-field electron diffraction) is performed, a diffraction pattern similar to a halo pattern is obtained. Observed. On the other hand, compared to the nc-OS film, the size is close to or smaller than that of nanocrystals. Electron diffraction (nanobeam) using electron beams with probe diameters (e.g., 1 nm to 30 nm). Also called electron diffraction, when this is performed, a ring-shaped region centered on the direct spot appears. In some cases, electron diffraction patterns with multiple spots observed may be obtained.

[0255] [a-like OS] a-like OS is an oxide having a structure between nc-OS and amorphous oxide semiconductors. It is a semiconductor. an a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. e OS has a higher hydrogen concentration in the membrane compared to nc-OS and CAAC-OS.

[0256] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS is a material composition. Regarding achievement.

[0257] [CAC-OS] CAC-OS refers to, for example, metal oxides in which the elements constituting the metal oxide are between 0.5 nm and 10 nm. Below, preferably, a structure of material that is unevenly distributed with a size of 1 nm to 3 nm or near that size. It is formed. Furthermore, in the following, in metal oxides, one or more metal elements are unevenly distributed. The region containing the metal element is 0.5 nm to 10 nm, preferably 1 nm to 3 nm. A mixture of particles smaller than or near a m in size is also called a mosaic or patchy appearance. .

[0258] Furthermore, CAC-OS is a material that separates into a first region and a second region. This results in a zigzag-like structure, where the first region is distributed within the film (hereinafter also referred to as a cloud-like structure). ) In other words, CAC-OS is a mixture of the first region and the second region. It is a composite metal oxide having the following composition.

[0259] Here, I for the metal elements constituting CAC-OS in In-Ga-Zn oxide The atomic ratios of n, Ga, and Zn are given as [In], [Ga], and [Zn] respectively. To be expressed. For example, in CAC-OS in In-Ga-Zn oxide, the first region This is the region where [In] is greater than the [In] in the composition of the CAC-OS film. The second region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. That is. Or, for example, in the first region, [In] is greater than [In] in the second region. It is also a region where the [Ga] is large, and the [Ga] is smaller than the [Ga] in the second region. Furthermore, in the second region, [Ga] is greater than [Ga] in the first region, and [I n] is a region where n is smaller than [In] in the first region.

[0260] Specifically, the first region mentioned above mainly consists of indium oxide, indium zinc oxide, etc. This is a region of minutes. Furthermore, the second region mentioned above is gallium oxide, gallium zinc oxide, etc. This is the region in which In is the main component. In other words, the first region described above can be said to be the region in which In is the main component. It can be replaced. Furthermore, the second region described above can be rephrased as the region with Ga as the main component. It is possible.

[0261] Note that a clear boundary may not be observed between the first region and the second region described above. .

[0262] For example, in CAC-OS in In-Ga-Zn oxide, the energy-dispersive X-ray segment Optical method (EDX:Energy Dispersive X-ray spectrosc) EDX mapping obtained using opy revealed the region with In as its main component (the first region) It has a structure in which a region (the second region) and a region mainly composed of Ga are unevenly distributed and mixed. This can be confirmed.

[0263] When CAC-OS is used in a transistor, the conductivity is due to the first region and the second region The insulating properties due to the region work complementarily to enable the switching function (On The function to turn off CAC-OS can be added to it. In other words, CAC-OS and The material has both conductive and insulating properties in parts, and the entire material Then it has the function of a semiconductor. By separating the conductive function and the insulating function, This allows for the maximum enhancement of both functions. Therefore, CAC-OS is used in transistors. This results in a high on-current (I on ), high field-effect mobility (μ), and good switching This enables smooth operation.

[0264] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and C It may have two or more of the following: AC-OS, nc-OS, and CAAC-OS.

[0265] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0266] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility is obtained. This can be achieved. Furthermore, highly reliable transistors can be realized.

[0267] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. The carrier concentration of oxide semiconductors is 1 × 10⁻⁶ 17 cm -3 The following is preferably 1 × 10 15 c m -3 More preferably 1 × 10 13 cm -3 More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3It is less than 1 × 10 -9 cm - 3 That concludes the explanation. Furthermore, when lowering the carrier concentration of the oxide semiconductor film, the oxide... The impurity concentration in the semiconductor film can be reduced to lower the defect level density. High-purity intrinsic or substantially high-purity intrinsic refers to a product with a low impurity concentration and a low defect level density. Furthermore, an oxide semiconductor with a low carrier concentration is subjected to high-purity intrinsic or substantially high-purity intrinsic acid. They are sometimes called monstrous semiconductors.

[0268] Furthermore, oxide semiconductor films that are high-purity intrinsic or substantially high-purity intrinsic have a low defect level density. Therefore, the trap level density may also be low.

[0269] Furthermore, the time required for charges trapped in the trap levels of an oxide semiconductor to disappear is... It can behave for a long time, almost like a fixed charge. Therefore, the trap level density is high. Transistors in which a channel formation region is formed in an oxide semiconductor have unstable electrical properties. There are cases where this occurs.

[0270] Therefore, in order to stabilize the electrical characteristics of a transistor, the impurity concentration in the oxide semiconductor is Reducing it is effective. Furthermore, in order to reduce the impurity concentration in oxide semiconductors, It is also preferable to reduce the concentration of impurities in the adjacent membrane. Examples of impurities include hydrogen, nitrogen, and Examples include potassium metals, alkaline earth metals, iron, nickel, and silicon.

[0271] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0272] In oxide semiconductors, if silicon or carbon, which are among the Group 14 elements, are present, oxidation occurs. Defect levels are formed in silicon semiconductors. Therefore, in oxide semiconductors, silicon and carbon The concentration of the element and the concentrations of silicon and carbon near the interface with the oxide semiconductor (secondary ion mass spectrometry) (SIMS: Secondary Ion Mass Spectrometry) The concentration obtained is 2 × 10 18 atoms / cm 3 The following is preferably 2 × 10 17 a toms / cm 3 The following applies:

[0273] Furthermore, if alkali metals or alkaline earth metals are present in the oxide semiconductor, defect levels are formed. This can result in the generation of carriers. Therefore, alkali metals or alkaline earth metals may be present. Transistors using oxide semiconductors tend to exhibit normally-on characteristics. Therefore, the concentration of alkali metals or alkaline earth metals in oxide semiconductors obtained by SIMS Degrees, 1 x 10 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0274] Furthermore, in oxide semiconductors, when nitrogen is present, electrons, which are carriers, are generated. As the nitrogen concentration increases, it becomes easier to convert to n-type semiconductors. As a result, oxide semiconductors containing nitrogen become semiconductors. The transistor used tends to exhibit normally-on characteristics. Alternatively, oxide semiconductors Furthermore, when nitrogen is present, trap levels may be formed. As a result, transistor The electrical properties of the oxide semiconductor obtained by SIMS may become unstable. The nitrogen concentration inside is 5 × 10 19 atoms / cm 3 Less than 5 × 1018 ato ms / cm 3 More preferably 1 × 10 18 atoms / cm 3 The following are even more preferable kuha 5×10 17 atoms / cm 3 Do the following:

[0275] Furthermore, the hydrogen contained in oxide semiconductors reacts with the oxygen bonded to the metal atoms to form water. Therefore, an oxygen deficiency may form. When hydrogen enters this oxygen deficiency, the carrier electrons In some cases, a child may be produced. Also, some of the hydrogen combines with the metal atom and oxygen, resulting in a crystal. It can generate electrons that act as carriers. Therefore, an oxide semiconductor containing hydrogen is used. Transistors with this characteristic tend to exhibit normally-on properties. Therefore, hydrogen in oxide semiconductors It is preferable that the SI is reduced as much as possible. Specifically, in oxide semiconductors, The hydrogen concentration obtained by MS is 1 × 10 20 atoms / cm 3 Less than 1x 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 less than More preferably 1 × 10 18 atoms / cm 3 Make it less than.

[0276] Using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor. This allows for the provision of stable electrical characteristics.

[0277] The configurations, structures, and methods shown in this embodiment may differ from those shown in other embodiments. It can be used in appropriate combination with other methods, etc.

[0278] (Embodiment 5) This embodiment describes an example of an application of the semiconductor device described above.

[0279] [Semiconductor wafers, chips] Figure 16A shows a top view of the substrate 711 before the dicing process. For example, a semiconductor substrate (also called a "semiconductor wafer") can be used as 711. Multiple circuit regions 712 are provided on the substrate 711. A semiconductor device according to one aspect of the present invention, or other functional circuits, etc., can be provided.

[0280] Each of the multiple circuit regions 712 is surrounded by an isolation region 713. Isolation region 713 A dividing line (also called a "dicing line") 714 is set at the position where it overlaps with the dividing line. By cutting the substrate 711 along 714, the chip 715 including the circuit region 712 is removed from the substrate. It can be cut from 711. Figure 16B shows a magnified view of chip 715.

[0281] In addition, a conductive material or a semiconductor layer may be provided in the isolation region 713. By providing a semiconductor layer, ESD that may occur during the dicing process is mitigated, and the dicing process This prevents a decrease in yield. Also, the dicing process generally involves cooling and cutting the substrate. Pure water with reduced resistivity achieved by dissolving carbon dioxide, etc., for purposes such as removing debris and preventing static electricity. This is done while flowing the material into the cutting area. By providing a conductive or semiconductor layer in the separation region 713, This reduces the amount of pure water used, thereby lowering the production costs of semiconductor devices. This can be done. Furthermore, it can increase the productivity of semiconductor equipment.

[0282] The semiconductor layer to be provided in the isolation region 713 has a band gap of 2.5 eV or more and 4.2 eV. It is preferable to use a material with a voltage of V or less, preferably 2.7 eV to 3.5 eV. Using such materials allows the accumulated charge to be discharged slowly, thus preventing ESD. This suppresses the rapid movement of electric charge, making electrostatic discharge less likely to occur.

[0283] [Electronic components] An example of applying chip 715 to an electronic component will be explained using Figure 17. Components are also called semiconductor packages or IC packages. Electronic components have terminals. Depending on the direction of connection and the shape of the terminals, multiple standards and names exist.

[0284] In the assembly process (downstream process), the electronic component is combined with the semiconductor device shown in the above embodiment. The semiconductor device is completed by assembling it with other components.

[0285] The subsequent process will be explained using the flowchart shown in Figure 17A. After the element substrate having the semiconductor device shown in the embodiment is completed, the back surface (half) of the element substrate A "backside grinding process" is performed (step S) to grind the surface on which no conductive devices or other components are formed. 721). By thinning the element substrate through grinding, warping of the element substrate is reduced, and the electronic part This allows for miniaturization of the product.

[0286] Next, a "dicing process" is performed to separate the element substrate into multiple chips (chip 715). (Step S722). Then, the separated chips are picked up individually and placed on the lead frame. The "die bonding process" to join the upper part is performed (step S723). Die bonding The joining of the chip and lead frame during the manufacturing process is done by bonding with resin or by bonding with tape. For example, select the appropriate method depending on the product. The chip may be bonded to the poser substrate.

[0287] Next, the leads of the lead frame and the electrodes on the chip are connected using thin metal wires. A "wire bonding process" is performed to connect the metal wires (step S724). Silver or gold wire can be used. Also, wire bonding is ball bonding. Wedge bonding can be used.

[0288] The wire-bonded chips are sealed in an "encapsulation process" using epoxy resin or similar materials. The sealing process is performed (step S725). The sealing process is performed to seal the inside of the electronic component. The chip is filled with resin, and the circuit parts built into the chip and the wires connecting the chip and leads are made of resin. It can be protected from mechanical external forces, and also from degradation of properties (reduced reliability) due to moisture and dust. It can be reduced.

[0289] Next, the "lead plating process" is performed to plate the leads of the lead frame. (Tep S726). Plating prevents lead rust and allows for later mounting on a printed circuit board. This allows for more reliable soldering at the edges. Next, the leads are cut and shaped. The "molding process" is then performed (step S727).

[0290] Next, the "marking process" is performed, in which printing (marking) is applied to the surface of the package. (Step S728). Then, the "inspection worker" checks the quality of the external shape and whether there are any malfunctions. After going through the process (step S729), the electronic component is completed.

[0291] Figure 17B also shows a schematic perspective view of the completed electronic component. As an example, a schematic diagram of a QFP (Quad Flat Package) in an oblique view is shown. The electronic component 750 shown in Figure 17B represents the lead 755 and the semiconductor device 753. As the semiconductor device 753, the semiconductor device shown in the above embodiment can be used. ru.

[0292] The electronic component 750 shown in Figure 17B is mounted on a printed circuit board 752, for example. Multiple electronic components 750 are combined, and each is electrically connected on the printed circuit board 752. The process continues until a circuit board with electronic components mounted (mounted circuit board 754) is completed. Circuit board 754 is used in electronic devices and the like.

[0293] [Electronic equipment] Next, we will describe an example of a semiconductor device or an electronic device equipped with the above-mentioned electronic components according to one aspect of the present invention. Then, I will explain.

[0294] As an electronic device using a semiconductor device or electronic component according to one aspect of the present invention, televisions, mo Display devices such as those from Nita, lighting devices, and desktop or notebook personal computers. Word processors, DVDs (Digital Versatile Discs), etc. Image playback device for playing still images or videos stored on a recording medium, portable CD player Radio, tape recorder, headphone stereo, stereo, desk clock, wall clock, etc. Cordless phone handsets, transceivers, mobile phones, car phones, portable game consoles, tablets Large-scale terminals, pachinko machines and other large game machines, calculators, portable information terminals ("portable information terminals") Also known as: electronic organizers, e-book readers, electronic translators, voice input devices, video cameras, etc. Digital still cameras, electric shavers, high-frequency heating devices such as microwave ovens, electric rice cookers, electric Washing machine, vacuum cleaner, water heater, fan, hair dryer, air conditioner, humidifier, dehumidifier Humidifiers and other air conditioning equipment, dishwashers, dish dryers, clothes dryers, futon dryers, electric refrigerators, Electric freezers, electric refrigerators / freezers, DNA storage freezers, flashlights, chainsaws, and other tools. Examples include smoke detectors, dialysis machines and other medical equipment. Furthermore, emergency lights, traffic lights, and bells are also included. Conveyors, elevators, escalators, industrial robots, power storage systems, power flats Examples include industrial equipment such as energy storage devices for standardization and smart grids.

[0295] Furthermore, mobile devices propelled by electric motors using electricity from energy storage devices also fall under the category of electronic equipment. It shall be included in the category. As the above-mentioned mobile devices, for example, electric vehicles (EVs), internal combustion engines and Hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs) that also incorporate electric motors. , tracked vehicles that replace these tire wheels with tracks, and motorized vehicles including electric assist bicycles Bicycles, motorcycles, electric wheelchairs, golf carts, small or large vessels, submarines, helicopters Examples include drones, aircraft, rockets, satellites, space probes and planetary probes, and spacecraft. ru.

[0296] A semiconductor device or electronic component according to one aspect of the present invention is incorporated into these electronic devices. It can be used in signaling equipment, etc.

[0297] Electronic devices include sensors (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid). Magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, Even if it has features such as measuring humidity, gradient, vibration, odor, or infrared radiation good.

[0298] Electronic devices can have a variety of functions. For example, they can display various types of information (still images, videos, Features that display text, images, etc. on the display unit, touch panel functionality, calendar, date, and It has functions to display the time, execute various software (programs), and wireless communication. It has functions such as communication and the ability to read programs or data recorded on a recording medium. It is possible.

[0299] Figures 18 and 19A to 19F show examples of electronic equipment. In Figure 18, the display Apparatus 8000 is an example of an electronic device using semiconductor device 8004 according to one aspect of the present invention. Specifically, the display device 8000 corresponds to a display device for receiving TV broadcasts, and the housing 8001 , display unit 8002, speaker unit 8003, semiconductor device 8004, energy storage device 8005, etc. A semiconductor device 8004 according to one aspect of the present invention is provided inside the housing 8001. The semiconductor device 8004 can store control information and control programs. Yes, it is possible. Furthermore, the semiconductor device 8004 has a communication function, and the display device 8000 can be used as an IoT device. It can be made to function in this way. In addition, the display device 8000 receives power from the commercial power supply. It can be used to power the device, or it can use the power stored in the energy storage device 8005.

[0300] The display unit 8002 has light-emitting elements such as liquid crystal display devices and organic EL elements in each pixel. Photographic display devices, electrophoresis display devices, DMD (Digital Micromirror Display) device), PDP (Plasma Display Panel), FED (Fie Display devices such as an LD Emission Display can be used.

[0301] In addition to being used for receiving TV broadcasts, the display devices are also used for personal computers and for displaying advertisements. This includes all information display devices.

[0302] In Figure 18, the fixed lighting device 8100 is a semiconductor device according to one aspect of the present invention. This is an example of an electronic device using 8103. Specifically, the lighting device 8100 has a housing 8101 It includes a light source 8102, a semiconductor device 8103, a power storage device 8105, etc. Figure 18 shows half The conductor device 8103 is located on the ceiling 8104 on which the housing 8101 and light source 8102 are installed. Although the example shows the case where it is located inside, the semiconductor device 8103 is located inside the housing 8101. It may also be provided in the part. The semiconductor device 8103 controls the luminescence brightness of the light source 8102, etc. It can store information and control programs. Furthermore, the semiconductor device 8103 communicates It has the functionality to enable the lighting device 8100 to function as an IoT device. The lighting device 8100 can receive power from the commercial power supply, or it can store power in the energy storage device. It is also possible to use electricity that has been supplied.

[0303] Figure 18 illustrates a fixed lighting device 8100 installed on the ceiling 8104. However, in one aspect of the present invention, the semiconductor device has, in addition to the ceiling 8104, for example, a side wall 8405, It can also be used for fixed lighting fixtures installed on floors 8406, windows 8407, etc. It can also be used in tabletop lighting devices, etc.

[0304] Furthermore, the light source 8102 can use an artificial light source that artificially obtains light using electricity. Yes, it is possible. Specifically, this includes discharge lamps such as incandescent light bulbs and fluorescent lamps, and LEDs and organic EL elements. Optical elements are an example of the artificial light sources mentioned above.

[0305] Figure 18 shows an air conditioner having an indoor unit 8200 and an outdoor unit 8204. This is an example of an electronic device using semiconductor device 8203 according to one aspect of the present invention. Specifically The indoor unit 8200 consists of a housing 8201, an air outlet 8202, a semiconductor device 8203, and an energy storage device 8 It has 205, etc. In Figure 18, the semiconductor device 8203 is installed in the indoor unit 8200. Although the example shows the case where it is present, the semiconductor device 8203 may also be installed on the outdoor unit 8204. Alternatively, the semiconductor device 8203 may be provided on both the indoor unit 8200 and the outdoor unit 8204. It is also acceptable to do so. The semiconductor device 8203 provides control information for the air conditioner and control programs. It can store programs and other data. Furthermore, the semiconductor device 8203 has a communication function, and The air conditioner can be made to function as an IoT device. The Shoner can receive power from the commercial power supply, or it can store energy in the energy storage device 8205. It is also possible to use the generated electricity.

[0306] Figure 18 shows a separate-type air conditioner consisting of an indoor unit and an outdoor unit. The example shown is an integrated air conditioner that has both the indoor and outdoor unit functions in a single housing. A semiconductor device according to one aspect of the present invention can also be used as the conditioner.

[0307] In Figure 18, the electric refrigerator 8300 is a semiconductor device 830 according to one aspect of the present invention. This is an example of an electronic device using 4. Specifically, the electric refrigerator 8300 has a casing 8301 , refrigerator door 8302, freezer door 8303, semiconductor device 8304, energy storage device 8305 It has such features. In Figure 18, the energy storage device 8305 is installed inside the housing 8301. The semiconductor device 8304 provides control information and control programs for the electric refrigerator 8300. It can hold. In addition, the semiconductor device 8304 has a communication function and is an electric refrigerator. The 8300 can be made to function as an IoT device. Also, the 8300 electric refrigerator / freezer... It can receive power from the commercial power supply, or from the energy stored in the energy storage device 8305. It is also possible to use force.

[0308] Figure 19A shows an example of a wristwatch-type personal information terminal. The personal information terminal 6100 has a housing 6 It includes 101, a display unit 6102, a band 6103, and operation buttons 6105. The information terminal 6100 contains a secondary battery and a semiconductor device according to one aspect of the present invention or It includes electronic components. A semiconductor device or electronic components according to one aspect of the present invention are provided in a portable information terminal 61. By using it in 00, the mobile information terminal 6100 can be made to function as an IoT device. ru.

[0309] Figure 19B shows an example of a mobile phone. The mobile information terminal 6200 has a housing 6201 In addition to the integrated display unit 6202, there are also operation buttons 6203, a speaker 6204, and a microphone. It is equipped with a Lophone 6205, among other things.

[0310] Furthermore, the mobile information terminal 6200 has a fingerprint sensor 6209 in an area that overlaps with the display unit 6202. Prepare for this. The fingerprint sensor 6209 may also be an organic light sensor. Fingerprints differ from person to person. Therefore, the fingerprint sensor 6209 can acquire a fingerprint pattern and perform personal authentication. As a light source for acquiring a fingerprint pattern with the pattern sensor 6209, the light emitted from the display unit 6202 Light can be used.

[0311] Furthermore, the portable information terminal 6200 contains a secondary battery and a semiconductor according to one aspect of the present invention. The present invention comprises a device or electronic component. A semiconductor device or electronic component according to one aspect of the present invention is portable. By using it with the information terminal 6200, the mobile information terminal 6200 can function as an IoT device. It is possible.

[0312] Figure 19C shows an example of a cleaning robot. The cleaning robot 6300 has a housing 630 1 Display unit 6302 located on the top surface, multiple cameras 6303 located on the side, brush 6 It has 304, operation buttons 6305, various sensors, etc. Although not shown, a cleaning robot The 6300 is equipped with wheels, a suction port, etc. The 6300 cleaning robot is self It moves, detects dust 6310, and sucks up the dust from the suction port located on the bottom. Cut.

[0313] For example, the cleaning robot 6300 analyzes images captured by the camera 6303 to identify walls, furniture, etc. Alternatively, it can determine the presence or absence of obstacles such as steps. Furthermore, image analysis can determine wiring... If an object that may become entangled in brush 6304 is detected, the rotation of brush 6304 will be stopped. It is possible. The cleaning robot 6300 has a secondary battery inside and according to one aspect of the present invention. A semiconductor device or electronic component is provided. A semiconductor device or electronic component according to one aspect of the present invention By using it with the cleaning robot 6300, the cleaning robot 6300 can function as an IoT device. It can be made to happen.

[0314] Figure 19D shows an example of a robot. The robot 6400 shown in Figure 19D is a computation robot. Device 6409, illuminance sensor 6401, microphone 6402, upper camera 6403, S Speaker 6404, display unit 6405, lower camera 6406 and obstacle sensor 6407, It is equipped with a moving mechanism 6408.

[0315] Microphone 6402 has the function of detecting the user's voice and ambient sounds. Additionally, speaker 6404 has the function of emitting sound. Robot 6400 has a microphone Using the Lophone 6402 and speaker 6404, communication with the user is performed. It is possible to do so.

[0316] The display unit 6405 has the function of displaying various information. The robot 6400 is used It is possible to display the information desired by the user on the display unit 6405. The display unit 6405 is a touch It may also be equipped with a control panel. Furthermore, the display unit 6405 is a removable information terminal. It's also fine to install it in a fixed position on the robot 6400 for charging and data transfer. This makes it possible.

[0317] The upper camera 6403 and the lower camera 6406 image the area around the robot 6400. It has the function of. In addition, the obstacle sensor 6407 uses the moving mechanism 6408 to move the robot 64 Robot 6 can detect the presence or absence of obstacles in the direction of travel as 00 moves forward. The 400 uses an upper camera 6403, a lower camera 6406, and an obstacle sensor 6407. This allows the device to recognize its surroundings and move safely. A light-emitting device according to one aspect of the present invention. This can be used in the display unit 6405.

[0318] The robot 6400 contains a secondary battery and a semiconductor device according to one aspect of the present invention or It comprises electronic components. A semiconductor device or electronic components according to one aspect of the present invention are provided to robot 6400. By using this, the Robot 6400 can be made to function as an IoT device.

[0319] Figure 19E shows an example of an aircraft. The aircraft 6500 shown in Figure 19E has a propeller. It has components such as the 6501, camera 6502, and battery 6503, and is capable of autonomous flight. It holds.

[0320] For example, image data captured by camera 6502 is stored in electronic component 6504. Sub-component 6504 analyzes image data to detect the presence or absence of obstacles during movement. This is possible. Also, the electronic component 6504 can detect changes in the storage capacity of the battery 6503, The remaining amount of fuel can be estimated. The aircraft 6500 has inside it one aspect of the present invention A semiconductor device or electronic component comprising a semiconductor device or electronic component according to one aspect of the present invention. By using this in the aircraft 6500, the aircraft 6500 can function as an IoT device. It is possible.

[0321] Figure 19F shows an example of an automobile. Automobile 7160 has an engine, tires, and brakes. It has a key, steering system, camera, etc. Automobile 7160 has inside one aspect of the present invention The present invention comprises a semiconductor device or electronic component. By using this product in the automobile 7160, the automobile 7160 can function as an IoT device. It is possible.

[0322] The configurations, structures, and methods shown in this embodiment may differ from those shown in other embodiments. It can be used in appropriate combination with laws and regulations.

[0323] (Embodiment 6) Using the OS transistors shown in this specification, a normally-off CPU ("Noff") can be created. It can realize a gate. A normally-off type transistor remains in a non-conductive state (also called the off state) even when the voltage is 0V. It is an integrated circuit that includes a zista.

[0324] The Noff-CPU stops supplying power to circuits within the Noff-CPU that are not in operation, The circuit can be put into standby mode. When the power supply is stopped and the circuit is in standby mode... No power is consumed. Therefore, the Noff-CPU can minimize power usage. It can. Also, the Noff-CPU can maintain the necessary settings and other operational conditions even when the power supply is cut off. Information can be retained for a long period of time. Resuming from standby mode restarts power supply to the circuit. All that is needed is to run the command, and there is no need to rewrite the settings or conditions. In other words, it is possible to run the command from a standby state. Fast recovery is possible. In this way, the Noff-CPU does not significantly reduce the operating speed. Power consumption can be reduced.

[0325] Noff-CPU is used, for example, in the IoT (Internet of Things) field. IoT terminal devices (also called "endpoint microcontrollers") such as the 803 are small-scale systems It can be suitably used in the application of the material.

[0326] Figure 20 shows the hierarchical structure of IoT networks and trends in requirements specifications. The specifications show a power consumption of 804 and a processing performance of 805. IoT network hierarchical structure This is broadly divided into the upper-level cloud computing sector (801) and the lower-level embedded systems sector (802). Cloud computing (801) includes, for example, servers. Embedded systems (802) include, for example, machines. This includes industrial robots, automotive equipment, and home appliances.

[0327] The higher the level, the more processing performance is required rather than low power consumption. Therefore, in the cloud sector... The 801 uses high-performance CPUs, high-performance GPUs, and large-scale SoCs. Furthermore, the lower layers... The demand is for low power consumption rather than high processing performance, and the number of devices will increase exponentially. A semiconductor device according to one aspect of the invention is suitable for communication devices in IoT terminal devices that require low power consumption. It can be used appropriately.

[0328] Note that "endpoint" refers to the furthest region of embedded systems field 802. Devices used in this field include, for example, those used in factories, home appliances, infrastructure, and agriculture. This applies to microcontrollers.

[0329] Figure 21 shows an example of an endpoint microcontroller application in factory automation. An image diagram is shown. Factory 884 is cloud via the Internet. It connects to Do883. Also, Cloud883 connects to Home883 via the internet. It connects to 81 and Office 882. Even if the internet connection is wired. Yes, or a wireless communication method may also be used. For example, in the case of a wireless communication method, the communication device has a built-in radio wave Using a semiconductor device according to one aspect of the present invention, the fourth-generation mobile communication system (4G) and the fifth-generation mobile communication system Wireless communication should be performed in accordance with communication standards such as 5G. Also, Factory 8 Unit 84 may be connected to factories 885 and 886 via an internet connection.

[0330] Factory 884 has a master device (control device) 831. Master device 831 is It has the function to connect to Cloud 883 and exchange information. It also has a master device 831. This involves multiple industrial robots 842 included in IoT terminal device 841, and M2M (Machine-to-Machine). M2M (Machine to Machine) interface 832 is used for connection. Interface 832 is, for example, an industrial Ethernet, a type of wired communication method. Using Ethernet (a registered trademark) and local 5G, a type of wireless communication method That's good too.

[0331] Factory managers can access the factory from home 881 or office 882 via cloud 883. You can connect to location 884 to check the operating status, etc. You can also check for incorrect or missing items, and place items. It can be used for tasks such as providing location instructions and measuring cycle time.

[0332] In recent years, the introduction of IoT into factories has been progressing globally, under the banner of "smart factories." In smart factory examples, in addition to simple inspection and auditing using endpoint microcontrollers, There have also been reports of cases where the system is used for fault detection and anomaly prediction.

[0333] Small-scale systems such as endpoint microcontrollers consume the following total power during operation: Because the power consumption is often small, the power reduction effect during standby operation by Noff-CPU is significant. On the other hand, in the embedded systems field of IoT, responsiveness is sometimes required, but Noff-CP Using U enables high-speed recovery from standby mode.

[0334] The configurations, structures, and methods shown in this embodiment may differ from those shown in other embodiments. It can be used in appropriate combination with other methods, etc.

[0335] (Notes regarding the descriptions in this specification, etc.) The above embodiments and a description of each component in those embodiments are provided below. .

[0336] The configurations shown in each embodiment can be appropriately combined with the configurations shown in other embodiments to represent the present invention. This can be one embodiment. Furthermore, multiple configuration examples may be shown within a single embodiment. The combination of example configurations can be appropriately arranged.

[0337] Furthermore, the content described in one embodiment (even a part of it) may be subject to change in implementation. Other content (even partial content) described in form, and / or one or more other The contents described in the embodiment (even if only some of the contents) may be applied, combined, or It is possible to perform substitutions, etc.

[0338] Furthermore, the content described in each embodiment refers to the use of various figures in each embodiment. This refers to the content described or the content described using the text included in the specification.

[0339] Note that a diagram (even a part of it) described in one embodiment may be a part of that diagram. , another figure (even a part of it) described in that embodiment, and / or one or This involves combining the figures (or even just some of them) described in multiple other embodiments. This allows for the creation of even more diagrams.

[0340] Furthermore, in this specification, etc., block diagrams classify components according to their function and treat them as independent of each other. It is shown as a block. However, in actual circuits, the components are divided by function. It is difficult to separate the functions, and when multiple functions are involved in a single circuit, or when multiple circuits are involved... In some cases, one function may be involved. Therefore, the blocks in the block diagram are specified in the specification. The components described are not limited to those explained, and can be appropriately rephrased depending on the situation.

[0341] Furthermore, in the drawings, the size, layer thickness, or area may be arbitrarily depicted for the sake of explanation. This is what is shown. Therefore, it is not necessarily limited to that scale. Note that the drawings are for clarity. This is a schematic representation for illustrative purposes only and is not limited to the shapes or values ​​shown in the drawings. For example, variations in signals, voltages, or currents due to noise, or timing discrepancies. This can include variations in signals, voltages, or currents.

[0342] Furthermore, the positional relationships of the components shown in drawings are relative. Therefore, drawings When referring to and explaining the components, terms such as "above" and "below" that indicate positional relationships are for convenience. It may be used in this way. The positional relationship of the components is not limited to what is described herein, and may vary. It can be rephrased appropriately depending on the situation.

[0343] In this specification and other documents, when describing the connection relationships of transistors, the term "source or drain" is used. One side of the source is called the first electrode, or the first terminal, and the other side of the source and drain is called the source The notation used is "the other side of the drain" (or second electrode, or second terminal). The source and drain of a transistor can vary depending on the transistor's structure or operating conditions. This is for the purpose of dividing. Regarding the terms source and drain of a transistor, source (drain) Depending on the context, terms such as "in" terminal or "source (drain) electrode" can be appropriately rephrased. .

[0344] Furthermore, in this specification, the terms "electrode" and "wiring" refer to these components functionally. It is not limited to this. For example, "electrode" can be used as part of "wiring". And the reverse is also true. Furthermore, the terms "electrode" and "wiring" can refer to multiple "electrodes" and This includes cases where the wiring is formed as an integrated unit.

[0345] Furthermore, in this specification, voltage and potential may be used interchangeably as appropriate. Voltage is a base This refers to the potential difference from a reference potential. For example, the reference potential is the ground voltage (earth). If we consider voltage as a unit of measurement, then voltage can be rephrased as potential. Ground potential is not necessarily 0V. This does not necessarily mean that. Furthermore, electric potential is relative, and depending on the reference potential, This may change the potential supplied to wiring, etc.

[0346] Furthermore, in this specification, a node is defined as having terminals and wiring, depending on the circuit configuration and device structure. These can be rephrased as electrodes, conductive layers, conductors, impurity regions, etc. Also, terminals, distribution Lines and other elements can be rephrased as nodes.

[0347] In this specification, etc., "A and B are connected" means that A and B are electrically connected. This refers to things that are electrically connected. Here, A and B are said to be electrically connected to each other. The object (a switch, transistor element, or diode or other element, or said element and A connection (referring to a circuit including wiring, etc.) that allows electrical signals to be transmitted between A and B is possible when such a connection exists. This refers to a continuation. Furthermore, if A and B are electrically connected, then A and B are directly connected. This includes cases where A and B are directly connected. Here, A and B are said to be directly connected via the above-mentioned object. However, it is possible to transmit electrical signals between A and B via wiring (or electrodes), etc. It refers to a certain type of connection. In other words, a direct connection is a connection that, when represented in an equivalent circuit, looks like the same circuit diagram. It refers to a connection that can be made.

[0348] In this specification, a switch means a conductive state (on state) or a non-conductive state (off state). It refers to a device that enters a state (F) and has the function of controlling whether or not to allow current to flow. Or, A switch is a device that has the function of selecting and switching the path through which electric current flows.

[0349] In this specification, channel length refers, for example, to the length of a semiconductor in a top view of a transistor. The body (or the part of the semiconductor through which current flows when the transistor is ON) and the gate The distance between the source and drain in the region where they overlap, or in the region where a channel is formed. It means separation.

[0350] In this specification, channel width refers to, for example, the state in which a semiconductor (or transistor) is ON. The region where the part of the semiconductor through which current flows (when in a certain state) and the gate electrode overlap, or channel This refers to the length of the portion where the source and drain face each other in the region where the drain is formed. .

[0351] In this specification, the terms "membrane," "layer," etc. may be used in some cases, or in a manner. Depending on the situation, they can be interchanged. For example, the term "conductive layer" can be replaced with " In some cases, the term can be changed to "conductive film." Or, for example, "insulating film." In some cases, it is possible to change the term "insulating layer" to "insulating layer." [Explanation of symbols]

[0352] 10: Wireless communication device, 100: Semiconductor device, 101: Current-voltage conversion unit, 102: Current switch Switch section, 103: Voltage-current conversion section, 111: Transistor, 112: Semiconductor layer, 121: Transistor, 122: Semiconductor layer

Claims

1. Current-voltage conversion section, Current switch section, Voltage-to-current conversion unit, It has a control unit and The current switch section comprises a first transistor and a second transistor, The voltage-current conversion unit has a third transistor, The control unit has a fourth transistor, The first transistor has an oxide semiconductor in the channel formation region, The second transistor has an oxide semiconductor in the channel formation region, The third transistor has a nitride semiconductor in the channel formation region, The fourth transistor has silicon in the channel formation region, The first transistor is provided on the upper layer of the layer on which the third transistor and the fourth transistor are provided. The second transistor is provided on the upper layer of the layer on which the first transistor is provided. Semiconductor equipment.

2. In claim 1, The oxide semiconductor is a semiconductor device comprising In, Ga, and Zn.

3. In claim 1 or claim 2, The nitride semiconductor is a semiconductor device containing Ga.

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