薄膜形成方法

JP7891796B2Inactive Publication Date: 2026-07-17SOULBRAIN CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
SOULBRAIN CO LTD
Filing Date
2020-01-09
Publication Date
2026-07-17
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Benefits of technology

【0013】 本発明によれば、副反応を抑制し、蒸着速度を低減させて薄膜成長率を適切に下げ、また薄膜内の工程副生成物を除去することで腐食や劣化を防ぎ、複雑な構造を持つ基板上に薄膜を形成する場合でも、段差被覆性(step coverage)及び薄膜の厚さ均一性を大きく向上させる薄膜形成用成長抑制剤、並びに、これを利用した薄膜形成方法及びこれから製造された半導体基板を提供するという効果がある。

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Abstract

To provide a growth inhibitor for thin film formation that suppresses side reaction to lower a thin-film growth rate and also removes process by-products in a thin film so that even when the thin film is formed on a substrate having a complicated structure, step coverage and uniformity in thickness of the thin film can be greatly improved.SOLUTION: There are provided: a growth inhibitor for thin film formation which is a compound represented by chemical formula 1, AnBmXo, where A is carbon or silicon, B alkyl having a hydrogen or carbon number of 1 to 3, X halogen, n an integer of 1 to 15, o an integer equal to or larger 1, and m 0 to 2n+1; and a thin film forming method using the same and a semiconductor substrate manufactured by the same.SELECTED DRAWING: Figure 2
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