Co-Cr-Pt-B系強磁性体スパッタリングターゲット
JP7891818B2Active Publication Date: 2026-07-17TANAKA KIKINZOKU KOGYO KK
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- TANAKA KIKINZOKU KOGYO KK
- Filing Date
- 2022-02-14
- Publication Date
- 2026-07-17
AI Technical Summary
Benefits of technology
【0016】 本発明のCo-Cr-Pt-B系強磁性体スパッタリングターゲットは、Bを0at%超過30at%以下含み、Bが全体に分布しているCo-Cr-Pt-B合金相(A)と、Co-B合金、Co-Cr-B合金又はCo-Pt-B合金のいずれかであって、Bを0at%超過20at%以下含み、Bが全体に分布している合金相(B)とからなり、B凝集相が偏在することなく、Bがターゲット全体にわたって分布しているため、スパッタリング時の放電電圧を低下させることができ、過剰な電圧を原因とするアーキング等の放電異常を抑制することができる上に、漏洩磁束密度が高い。
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Abstract
To provide a sputtering target of a ferromagnetic material for obtaining a stable discharge without causing an abnormal discharge in a magnetron sputtering method.SOLUTION: A Co-Cr-Pt-B based ferromagnetic material sputtering target is composed of a Co-Cr-Pt-B alloy phase (A) that contains B of more than 0 at% and 30 at% or less and in which B is entirely spread without unevenly distributing a condensed phase, and an alloy phase (B) that is either a Co-B alloy, a Co-Cr-B alloy, or a Co-Pt-B alloy and contains B of more than 0 at% and 20 at% or less and in which B is entirely distributed without unevenly distributing B condensed phase. The alloy phase (A) occupies 50 vol% or more of the sputtering target and the alloy phase (B) occupies less than 50 vol% of the sputtering target.SELECTED DRAWING: Figure 8
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