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Abstract

To provide an image sensor configured to minimize cross-talk between pixels and to increase a size of a gate electrode.SOLUTION: An image sensor 300 includes: a substrate including a plurality of pixel regions; and a deep element isolation pattern 150 disposed between the plurality of pixel regions. The plurality of pixel regions include first to fourth pixel regions PXR1-4 which are adjacent to each other in first and second directions that are parallel to a first surface of the substrate and orthogonal to each other. The deep element isolation pattern includes: first portions 150P1 interposed between the first and second pixel regions and between the third and fourth pixel regions and spaced apart from each other in the second direction; and second portions 150P2 interposed between the first and third pixel regions and between the second and fourth pixel regions and spaced apart from each other in the first direction. A first extended active pattern EACT1 included in the first pixel region is extended onto the second pixel region along the first direction and is disposed between the first portions of the deep element isolation pattern.SELECTED DRAWING: Figure 3

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