半導体装置
JP7891905B2Active Publication Date: 2026-07-17RENESAS ELECTRONICS CORP
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- RENESAS ELECTRONICS CORP
- Filing Date
- 2022-11-16
- Publication Date
- 2026-07-17
AI Technical Summary
Benefits of technology
【0018】 一実施の形態によれば、信頼性寿命の低下を抑制することが可能な半導体装置を提供することが可能となる。また、一実施の形態によれば、FinFETの自己発熱を高精度に測定することが可能な半導体装置を提供することが可能となる。
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Abstract
To provide a semiconductor device capable of suppressing reduction in reliability life.SOLUTION: A semiconductor device 1 includes a transistor. A semiconductor chip includes a local sensor LoS arranged to approach an area to be measured and for outputting a leakage current corresponding to temperature in the area to be measured as sensor signals SS1 and SS2; conversion circuits LDC1 and LDC2 arranged in the semiconductor chip and for converting the sensor signals SS1 and SS2 from the local sensor LoS into digital count values; and circuit blocks CB2_1-CB3_3 arranged between the local sensor LoS and the conversion circuits LDC1 and LDC2 when viewed in plane view in the semiconductor chip.SELECTED DRAWING: Figure 1
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