基準電流回路
JP7891934B2Active Publication Date: 2026-07-17SEIKO INSTR INC
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- SEIKO INSTR INC
- Filing Date
- 2023-01-24
- Publication Date
- 2026-07-17
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Figure 0007891934000001 
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Abstract
To provide a reference current circuit capable of supplying a stable reference current with high accuracy against temperature changes and capable of reducing an area.SOLUTION: A reference current circuit 100 includes: a current mirror circuit 110 which supplies Iout based on Iin; an E-type MOS 130 in which a gate 130G is connected to a drain 130D to which Iout is supplied, and a source 130S is grounded; a D-type MOS 140 in which the E-type MOS 130 and gate terminals are connected, and which generates Vref; a voltage division circuit 150 which outputs a divided voltage Vdiv of Vref; and a D-type MOS 160 which supplies Iin according to Vdiv. The E-type MOS 130 has the same channel conductivity type and impurity concentration as the D-type MOS 130, but has a different Fermi level of the gate electrode from the D-type MOS 130. The voltage division circuit 150 outputs Vdiv, which is higher than a threshold voltage and lower than a cross point X of the D-type MOS 160, to the gate terminal of the D-type MOS 160.SELECTED DRAWING: Figure 1
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