レジスト組成物及びレジストパターン形成方法

JP7891938B2Active Publication Date: 2026-07-17TOKYO OHKA KOGYO CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
TOKYO OHKA KOGYO CO LTD
Filing Date
2023-02-14
Publication Date
2026-07-17

AI Technical Summary

Benefits of technology

【0012】 本発明によれば、高感度化が図れ、且つ解像性、ラフネス等のリソグラフィー特性が良好なレジスト組成物、当該レジスト組成物を用いたレジストパターン形成方法を提供できる。

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Abstract

To provide a resist composition which achieves higher sensitivity and has good lithographic characteristics such as resolution and roughness, and a resist pattern forming method using the resist composition.SOLUTION: The resist composition contains: a resin component (A1) whose solubility in a developer changes by the action of an acid; a compound (D0) represented by general formula (d0); and a fluororesin component (F1) having a constituent unit (f1) containing a base-dissociable group of a specific structure. In the formula, Ar represents an aromatic ring; I represents an iodine atom; Rd01 represents a substituent other than an iodine atom and a carboxy group; n1 represents an integer of 2 or more; n2 represents an integer of 0 or more; Ld01 represents a single bond or a divalent linking group; m represents an integer of 1 or more; and Mm+ represents an m-valent cation.SELECTED DRAWING: None
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