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JP7892043B2Active Publication Date: 2026-07-17SAMSUNG ELECTRONICS CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2024-11-14
- Publication Date
- 2026-07-17
AI Technical Summary
Benefits of technology
【0008】 本発明によれば、深い素子分離パターンが、第1ピクセル領域と第2ピクセル領域との間及び第3ピクセル領域と第4ピクセル領域との間に介在して第2方向に互いに離隔される第1部分並びに第1ピクセル領域と第3ピクセル領域との間及び第2ピクセル領域と第4ピクセル領域との間に介在して第1方向に互いに離隔される第2部分を含み、第1~第4ピクセル領域が深い素子分離パターンの第1部分及び第2部分によって部分的に互いに分離されることによって、第1~第4ピクセル領域の間のクロストークが最小化される。
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Abstract
To provide an image sensor in which the cross talk between pixels is minimized and the size of a gate electrode is increased.SOLUTION: An image sensor 400A includes a substrate 100 having a first surface 100a and a second surface 100b opposite to the first surface, and including a first photoelectric conversion region 110 in a first pixel region PXR1 and a second photoelectric conversion region in a second pixel region PXR2, a microlens array 330 including a first microlens disposed on the first photoelectric conversion region and a second microlens disposed on the second photoelectric conversion region, a first transfer transistor disposed in the first pixel region, a second transfer transistor disposed in the second pixel region, and a deep element separation pattern 105 between the photoelectric conversion regions.SELECTED DRAWING: Figure 4A
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