膜質改善剤

JP7892054B2Inactive Publication Date: 2026-07-17SOULBRAIN CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
SOULBRAIN CO LTD
Filing Date
2022-09-13
Publication Date
2026-07-17
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Benefits of technology

【0016】 本発明によれば、薄膜形成時、工程副生成物が減少し、段差被覆性と薄膜密度を改善させる所定の構造の薄膜形成用膜質改善剤を提供することができ、ひいてはそれを用いた薄膜形成方法、及びそれから製造された半導体基板を提供する効果がある。

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Patent Text Reader

Abstract

The present invention relates to a film quality improver, a thin film formation method using the same, and a semiconductor substrate manufactured therefrom. By using a film quality improver having a specific structure in a thin film deposition process, side reactions are suppressed and the thin film growth rate is appropriately controlled, and process by-products in the thin film are removed. This has the effect of significantly improving step coverage and thin film thickness uniformity, reducing corrosion and deterioration, and improving the electrical properties of the thin film by improving the crystallinity of the thin film, even when the thin film is formed on a substrate having a complex structure.
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