半導体装置及び電力変換装置
JP7892134B2Active Publication Date: 2026-07-17MITSUBISHI ELECTRIC CORP
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Filing Date
- 2024-04-04
- Publication Date
- 2026-07-17
AI Technical Summary
Benefits of technology
【0010】 本開示によれば、第1発熱量が第2発熱量よりも大きい場合には、第1部分の寸法が第2部分の寸法よりも大きく、第2発熱量が第1発熱量よりも大きい場合には、第2部分の寸法が第1部分の寸法よりも大きい。このような構成によれば、動作時における半導体装置の信頼性を高めることができる。
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Abstract
The purpose is to provide an art capable of improving reliability of a semiconductor device during an operation. When a first heat generation amount on an inverse region side located on a side opposite to an active region with respect to a gate electrode is larger than a second heat generation amount on the active region side, a dimension of a first part on the inverse region side of the gate electrode in an interlayer insulation film is larger than the dimension of a second part on the active region side of the gate electrode in the interlayer insulation film, and when the second heat generation amount is larger than the first heat generation amount, the dimension of the second part is larger than the dimension of the first part.
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