Onium salt type monomer, polymer, chemically amplified resist composition, and patterning method

Onium salt type monomers with iodine-substituted aromatic rings in a polymer backbone address the challenges of high sensitivity, LWR, and CDU in resist compositions, enhancing etching resistance and pattern precision in advanced lithography.

JP7893105B2Inactive Publication Date: 2026-07-22SHIN ETSU CHEMICAL CO LTD
View PDF 4 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
SHIN ETSU CHEMICAL CO LTD
Filing Date
2022-09-20
Publication Date
2026-07-22
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

Existing chemically amplified resist compositions face challenges in achieving high sensitivity, low line edge roughness (LWR), critical dimension uniformity (CDU), and etching resistance during the formation of fine patterns, particularly in advanced lithography processes like EUV and ArF immersion lithography.

Method used

Incorporation of onium salt type monomers with fluorosulfonic acid anions containing a vinyl group and an aromatic ring substituted with iodine atoms, linked by a specific structure, into a polymer backbone to enhance solvent solubility, sensitivity, and etching resistance, while controlling acid diffusion.

Benefits of technology

The resulting resist composition exhibits improved LWR, CDU, and etching resistance, with increased sensitivity due to iodine's high absorption of EUV radiation, facilitating precise and durable fine pattern formation.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 0007893105000001
    Figure 0007893105000001
  • Figure 0007893105000002
    Figure 0007893105000002
  • Figure 0007893105000003
    Figure 0007893105000003
Patent Text Reader

Abstract

To provide an onium salt type monomer for use in chemically amplified resist compositions catalyzed by acid, which demonstrates increased sensitivity, and improves line width roughness (LWR) and critical dimension uniformity (CDU) of holes, while also providing superior etch resistance after pattern formation.SOLUTION: The present invention provides an onium salt type monomer represented by the formula (a1-1) or (a2-1).SELECTED DRAWING: None
Need to check novelty before this filing date? Find Prior Art