Cups and liquid processing equipment

Abstract

To suppress the bounce of the processing liquid splashed from the substrate onto the substrate on the inner surface of the cup.SOLUTION: A cup surrounding a substrate for liquid processing of the substrate is configured to have a first groove extending longitudinally on the inner surface of the cup, and a plurality of second grooves, each end of which is provided to be connected to the first groove and each of which has a cross-sectional area smaller than that of the first groove when viewed in the elongation direction.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] This disclosure relates to a cup and liquid processing In the device related.

Background Art

[0002] In the manufacturing process of semiconductor devices, liquid processing is performed on a semiconductor wafer (hereinafter referred to as a wafer). This liquid processing includes a process of supplying a processing liquid to the wafer stored in a cup. Patent Document 1 shows that the inner peripheral surface of the cup is roughened and a hydrophilic film is formed.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

[0004] An object of this disclosure is to suppress the rebound of the processing liquid scattered from the substrate onto the inner peripheral surface of the cup surrounding the substrate when liquid processing the substrate surrounded by the cup.

Means for Solving the Problems

[0005] The cup of this disclosure is a cup that surrounds the substrate that can rotate for liquid processing of the substrate and has an opening at the upper part, On the inner peripheral surface of the cup, there are a first height region and a second height region located above the first height region and closer to the opening, In the first height region and the second height region, a plurality of grooves are provided in the circumferential direction respectively, ​The groove in the first height region and the groove in the second height region are connected at each other's ends, and their extension directions are different. the law of nature, In the first height region, one groove and another groove are connected to each other by a first sub-groove. In the second height region, one groove and another groove are connected to each other by a second sub-groove. The cup of the present disclosure is a cup that surrounds a substrate that is rotatable for liquid treatment of the substrate and has an opening at the top, The inner circumferential surface of the cup has a first height region and a second height region located above the first height region and closer to the opening. The first height region and the second height region are each provided with a plurality of grooves in the circumferential direction. The groove in the first height region and the groove in the second height region are connected at their respective ends, and their extension directions are different. The groove in the second height region has a smaller cross-sectional area than the groove in the first height region. [Effects of the Invention]

[0006] This disclosure makes it possible to suppress splashing of the processing liquid scattered from the substrate onto the inner surface of the cup when processing the substrate with a liquid surrounded by a cup. [Brief explanation of the drawing]

[0007] [Figure 1] A longitudinal cross-sectional side view of a developing apparatus equipped with a cup according to one embodiment of the present disclosure. [Figure 2] This is a plan view of the aforementioned developing apparatus. [Figure 3] This is a longitudinal cross-sectional side view of the developing apparatus. [Figure 4] This is a longitudinal cross-sectional side view of the developing apparatus. [Figure 5] This is a plan view showing the inner circumferential surface of the cup. [Figure 6] This is a longitudinal cross-sectional view including the groove formed on the inner circumferential surface. [Figure 7] This is a longitudinal cross-sectional view including the groove formed on the inner circumferential surface. [Figure 8] This is a longitudinal cross-sectional view including the groove formed on the inner circumferential surface. [Figure 9] This is a longitudinal cross-sectional view including the groove formed on the inner circumferential surface. [Figure 10] This is a schematic diagram showing the liquid flow on the inner circumferential surface. [Figure 11] This is a schematic longitudinal cross-sectional view showing the groove. [Figure 12] It is a plan view of a wafer processed by the developing device. [Figure 13] It is an explanatory view showing the state of the inner peripheral surface. [Figure 14] It is an explanatory view showing the state of the inner peripheral surface. [Figure 15] It is a plan view showing another configuration of the groove on the inner peripheral surface.

Embodiments for Carrying Out the Invention

[0008] An outline of a developing device 1 which is an example of a liquid processing device will be described. The developing device 1 includes a cup 3 according to an embodiment of the present disclosure. In the developing device 1, a developing process of supplying a developing solution to a wafer W which is a substrate to resolve a resist pattern on the surface of the wafer W and a cleaning process following this developing process are performed. In the cleaning process, a cleaning liquid which is, for example, pure water is supplied to the surface of the rotating wafer W, whereby the developing solution is removed.

[0009] The above-described developing process and cleaning process are performed in a state where the wafer W is surrounded by the cup 3, preventing scattering of each liquid to each part of the device, and used liquids flow from the cup 3 to a drainage path and are removed. Then, droplets of the cleaning liquid scattered from the wafer W by the rotation of the wafer W during the cleaning process collide with the inner peripheral surface of the cup 3. A pattern composed of grooves is formed on the inner peripheral surface. A liquid film is formed from the above-described droplets by the pattern, and subsequently, the droplets colliding with the inner peripheral surface are captured by the liquid film. The pattern is configured to be able to discharge the cleaning liquid constituting the liquid film downward of the cup so that an appropriate amount of cleaning liquid maintains the liquid film during the cleaning process.

[0010] The developing apparatus 1 will be described below with reference to the longitudinal cross-sectional side view in Figure 1 and the plan view in Figure 2. The developing apparatus 1 is equipped with a spin chuck 11 as a mounting section for placing the wafer W. The spin chuck 11 holds the wafer W horizontally by adsorbing the center of the back surface of the wafer W. This spin chuck 11 is connected to a rotation mechanism 13 via a vertically extending shaft portion 12, and rotates around the vertical axis while holding the wafer W. Due to the rotation of the spin chuck 11, the wafer W rotates around its center.

[0011] The cup 3 described above will now be explained. In a plan view, the cup 3 is located in the outer region of the wafer W held by the spin chuck 11 and comprises a body portion 31, an inclined wall 32, a bottom portion 33, an inner peripheral wall 35, an annular portion 36, and a descending wall 38. Each of these portions is configured as an annular or cylindrical member whose central axes coincide with each other in a plan view. This central axis coincides with the rotation axis of the spin chuck 11 in a plan view.

[0012] The body portion 31 is provided on the outside of the wafer W placed on the spin chuck 11 in a plan view, and is configured as a vertically standing cylindrical body. The inner circumferential surface of this body portion 31 is shown as 31A. This inner circumferential surface 31A is the third height region of the inner circumferential surface of the cup 3, and is configured as a smooth surface without the grooves and the irregularities 53 caused by sandblasting described later. The upper end of the body portion 31 is configured as an inclined wall 32 by inclining so as to extend diagonally upward toward the central axis of the body portion 31. The lower end and upper end of the inclined wall 32 are located below and above the wafer W held by the spin chuck 11, respectively. Therefore, the inclined wall 32, together with the body portion 31, constitutes the side wall and inner circumferential surface of the cup 3. The groove pattern described above is formed on this inclined wall 32, which will be described in detail later.

[0013] The lower end of the body portion 31 extends horizontally toward the central axis of the body portion 31, forming an annular bottom portion 33. A vertical partition wall 34 is provided on the upper surface of this bottom portion 33, dividing it into an outer peripheral region 33A on the peripheral side and an inner peripheral region 33B closer to the central axis of the body portion 31. The partition wall 34 is cylindrical in shape along the circumference of the bottom portion 33. A drain port 30 is opened in the region of the bottom portion 33 facing the outer peripheral region 33A, and the developer and washing solution that flowed from the wafer W into the cup 3 are removed by flowing from this drain port 30 into the drain channel. In addition, an exhaust port 39 for exhausting the contents of the cup 3 is opened in the region of the bottom portion 33 facing the inner peripheral region 33B.

[0014] The inner periphery of the bottom portion 33 protrudes vertically upward, forming an inner periphery wall 35. An annular portion 36 is also provided, which surrounds the shaft portion 12, and the upper end of the inner periphery wall 35 is in contact with the lower surface of the central part in the width direction of the annular portion 36. The peripheral edge of the annular portion 36 has a mountain shape in a vertical cross-sectional view, and its top is a guide portion 37 located below the peripheral edge of the wafer W. The peripheral end of this guide portion 37 extends vertically toward a position below the upper end of the partition wall 34, forming a cylindrical descending wall 38, which is located outside the partition wall 34.

[0015] Three vertical pins 14 are provided so as to penetrate the part of the annular portion 36 that is closer to the center than the guide portion 37. Each pin 14 moves up and down by a lifting mechanism 15, and the wafer W is transferred between a transport mechanism (not shown) and a spin chuck 11. In addition, a filter mechanism 16 is provided above the cup 3, supplying air downwards. The air supply from this filter mechanism 16 and the exhaust from the exhaust port 39 inside the cup 3 create a downward airflow over the wafer W, during which the development and washing processes described above are performed.

[0016] The air that flows into cup 3 passes through a channel (referred to as exhaust region 17) formed between the side surface of wafer W and the inner surface of inclined wall 32. Furthermore, the air passes through a channel (referred to as narrow channel 18) between the inner surface 31A of body portion 31 and the outer surface of descending wall 38, and flows from the inner peripheral region 33B to the exhaust port 39 where it is removed. Therefore, the narrow channel 18 is located below and downstream of the exhaust region 17. The width A2 of the narrow channel 18 is smaller than the width A1 of the exhaust region 17. Since cup 3 is configured as described above, the exhaust region 17 and the narrow channel 18 are annular, and the widths A1 and A2 mentioned above are the radial lengths in that annular shape.

[0017] Cup 3 is made of resin. The resin that makes up the inner surface of the inclined wall 32 on which the pattern is formed is hydrophilic and contains carboxyl groups. More specifically, for example, the resin before hydrophilic treatment contains methyl groups, and these methyl groups are converted into carboxyl groups by hydrophilic treatment through fluorination and oxidation, as shown in Formula 1 below. This hydrophilic treatment is performed both inside and outside each of the grooves 41-43, 51, and 52 described later. Formula 1: -CH3+O2+F2→ -COF+H2O→ -COOH

[0018] The developer used in the developing apparatus 1 is a strong base. Therefore, when the developer adheres to the inner surface of the inclined wall 32, the reaction shown in Equation 2 below occurs, and a proton is removed from the carboxyl group, forming a carboxylic acid anion. The developer adheres to the inner surface of the wafer W either by splashing from the wafer W when supplied to the wafer W, or by being scattered from the wafer W by the centrifugal force of the wafer W's rotation during the cleaning process. Since the cleaning solution (pure water) is a weak base, the generated carboxylic acid anion attracts the cleaning solution due to the charge of the carboxylic acid anion. Therefore, a liquid film of the cleaning solution easily forms on the inner surface of the inclined wall 32. As shown in Equation 3 below, the carboxylic acid anion returns to a carboxyl group when a proton is donated from the cleaning solution. Consequently, when processing the wafers W sequentially transported to the developing apparatus 1, the reactions in Equations 2 and 3 are repeated, creating conditions that facilitate the formation of a liquid film during the cleaning process of each wafer W. Equation 2: -COOH+OH - →-COO - Formula 3: -COO - +H2O → -COOH

[0019] The hydrophilization treatment shown in Equation 1 above is not performed on, for example, the inner circumferential surface 31A of the body portion 31 of cup 3, and the inner circumferential surface of the body portion 31A has lower hydrophilicity (larger contact angle of the cleaning liquid) than the inner circumferential surface of the inclined wall 32. As a result, after the liquid film is formed on the inclined wall 32, the cleaning liquid that flows down to the inner circumferential surface 31A of the body portion 31 of cup 3 flows down and is discharged quickly. Therefore, the narrow channel 18 formed by this inner circumferential surface 31A is prevented from becoming even narrower due to the cleaning liquid remaining there, and thus the processing of the wafer W is prevented from being affected.

[0020] Furthermore, EDTA (ethylenediaminetetraacetic acid) is mixed into the resin that makes up the body 31 of cup 3. As a result, as shown in Figure 3, metal particles M, which are impurities contained in wafer W, are mixed into the developer or cleaning solution supplied to wafer W and flow out of wafer W. When this waste liquid (developer or cleaning solution) containing particles M flows down the inner circumferential surface 31A of the body 31, it forms a complex with EDTA and becomes fixed to the inner circumferential surface 31A as shown in Figure 4. In other words, the waste liquid is purified so that the flowing particles M are removed, and the inflow of waste liquid containing particles M into the drain port 30 is suppressed, thereby suppressing metal contamination of the drain channel. For this reason, it is easy to recover the developer and cleaning solution from the drain channel and reuse them.

[0021] Alternatively, instead of configuring the inner circumferential surface 31A forming the side wall of cup 3 as the metal collection surface, a film for collecting metal may be provided on the inner circumferential surface 31A of the body portion 31, and the metal may be collected by this film. In this case, the surface of the film becomes the metal collection surface, and this film may also be configured to contain, for example, EDTA.

[0022] Incidentally, the developing apparatus 1 is equipped with a developer supply nozzle 21 and a washing solution supply nozzle 22 for performing the developing and washing processes described above. The developer supply nozzle 21 is connected to a developer supply mechanism 23. The developer supply mechanism 23 is equipped with a valve and a developer storage section, and controls the supply of developer from the storage section to the developer supply nozzle 21. In other words, the supply of developer from the developer supply nozzle 21 is controlled by the developer supply mechanism 23. The washing solution supply nozzle 22 is connected to a washing solution supply mechanism 24. The washing solution supply mechanism 24 is equipped with a valve and a washing solution storage section, and controls the supply of washing solution from the storage section to the washing solution supply nozzle 22. In other words, the supply of washing solution from the washing solution supply nozzle 22 is controlled by the washing solution supply mechanism 24. In Figure 2, 21A and 22A are the outlets of the developer supply nozzle 21 and the washing solution supply nozzle 22, respectively.

[0023] Furthermore, the developer supply nozzle 21 and the cleaning solution supply nozzle 22 are connected to the drive mechanisms 25 and 26, respectively, so that they can move up and down and horizontally. With this configuration, the developer supply nozzle 21 and the cleaning solution supply nozzle 22 can move between a standby area (not shown) outside the cup 3 where these nozzles are kept in standby position and above the wafer W held on the spin chuck 11.

[0024] The developing apparatus 1 is equipped with a control unit 10, which is a computer, and programs stored on storage media such as compact discs, hard disks, memory cards, and DVDs are installed on it. The installed programs contain instructions (each step) so that control signals are output from the control unit 10 to each part of the developing apparatus 1. These control signals control the movement of each nozzle by the drive mechanisms 25 and 26, the rotation of the spin chuck 11 by the rotation mechanism 13, the supply and interruption of developing solution from the developing solution supply nozzle 21 by the developing solution supply mechanism 23, and the supply and interruption of cleaning solution from the cleaning solution supply nozzle 22 by the cleaning solution supply mechanism 24. As a result, the developing and cleaning processes are carried out in the developing apparatus 1.

[0025] The operation of the developing apparatus 1 will now be described. When the wafer W is transported onto the spin chuck 11 by the transport mechanism, the wafer W is placed on the spin chuck 11 via the pins 14 and held by suction. The developer supply nozzle 21 moves from the standby area outside the cup 3 to the peripheral edge of the wafer W. As the wafer W rotates at a relatively low rotational speed, the developer supply nozzle 21 moves to the center of the wafer W while discharging developer onto the wafer W, and the entire surface of the wafer W is covered with developer. The developer supply nozzle 21 returns to the standby area, and the cleaning solution supply nozzle 22 moves from the standby area to the center of the wafer W.

[0026] As the wafer W rotates at a relatively high speed, cleaning solution is discharged from the cleaning solution supply nozzle 22 to the center of the wafer W. The cleaning solution spreads outwards towards the edges of the wafer W due to centrifugal force, pushing and removing the developer solution from the surface of the wafer W. This cleaning solution is then also removed from the wafer W by centrifugal force. After the supply of cleaning solution is stopped, the cleaning supply nozzle 2, which is the processing solution supply unit, returns to the standby area, and the rotation of the wafer W stops. The wafer W is then transferred from the spin chuck 11 to the transport mechanism via the pin 14, and the wafer W is transported out of the developing apparatus 1. This series of operations is performed each time a wafer W is transported to the developing apparatus 1.

[0027] Next, the configuration of the inner surface of the inclined wall 32 of cup 3 will be further explained with reference to Figure 5. Figure 5 shows the inner surface as seen from inside cup 3. More specifically, it is a representation of a portion of the entire inner surface formed by the inclined wall 32, cut out in the circumferential direction, and represented as a plane by eliminating the curvature. For example, the inner surface of the inclined wall 32 is formed by the grooves described above in a rotationally symmetrical manner, and therefore, multiple portions of the inner surface are each similarly represented as shown in Figure 5. From here on, unless otherwise specified, the inner surface of the inclined wall 32 will be described assuming that it is represented as a plane by changing the curvature as shown in Figure 5.

[0028] The inner surface of the inclined wall 32 is divided into three heights along the horizontal plane, designated as the lower region R1, the intermediate region R2, and the upper region R3, from bottom to top. The groove patterns differ between these regions R1 to R3, and the upper region R3 does not have this pattern. The lower end of the intermediate region R2 is located above the surface of the wafer W placed on the spin chuck 11. Therefore, the lower region R1 is formed from a position above the surface of the wafer W to a position below the surface of the wafer W. The lower region R1 corresponds to the first height region, the intermediate region R2 to the second height region, and the upper region R3 to the fourth height region.

[0029] The functions of each region R1 to R3 are outlined below. The lower region R1 is configured to form a liquid film from droplets of cleaning solution, collect droplets with this liquid film, and discharge excess cleaning solution downwards, as described above. In addition to the cleaning solution that is directly scattered from the wafer W into the lower region R1, cleaning solution that is scattered into the upper intermediate region R2 is also transmitted to this lower region R1 and discharged downwards from there.

[0030] In the intermediate region R2, a liquid film is formed from droplets, but the intermediate region R2 is also configured to efficiently capture fine droplets, or mist, and form a liquid film. Since mist tends to move upwards on the wafer W, the intermediate region R2 is positioned higher than the wafer W, i.e., closer to the opening of the cup 3, as described above. Because the intermediate region R2 is located closer to the opening of the cup 3, its pattern shape is designed to minimize disruption to the downward airflow formed on the wafer W. In the following explanation, relatively large droplets may be simply referred to as droplets to distinguish them from mist.

[0031] Furthermore, the upper end region R3 is configured to have a lower droplet and mist collection effect compared to the lower region R1 and the intermediate region R2. This is because if droplets adhere to the upper end region R3, including the upper end of cup 3, or if a liquid film is formed, the surface tension of the liquid may cause it to overflow the opening of cup 3, wrap around to the outside of cup 3, and flow down the outside. In other words, the upper end region R3 is provided to prevent contamination of the outside of cup 3 by the cleaning liquid.

[0032] Based on the roles described above, the vertical length of the upper region R3 can be relatively small. Therefore, between the intermediate region R2 and the upper region R3, the intermediate region R2 has a larger vertical length to increase its area and achieve a high collection effect of the cleaning liquid. In addition, as described above, the intermediate region R2 is formed in a way that does not disturb the downdraft, so that the liquid is more easily discharged downwards from the lower region R1 than from the intermediate region R2. In this example, the lower region R1 has a larger vertical length and a larger area than the intermediate region R2. Therefore, the configuration allows for efficient downward discharge of the liquid.

[0033] The lower region R1 will be described in detail below. Three types of grooves are formed in the lower region R1, and for the sake of explanation, they will be referred to as the main groove 41, the secondary groove 42, and the auxiliary groove 43. These three grooves may sometimes be referred to collectively as grooves 41 to 43. Numerous grooves 41 to 43 are formed. The main groove 41 corresponds to the first groove, and the secondary groove 42 corresponds to the second groove. In this example, the outer regions of grooves 41 to 43 in the lower region R1 are smooth surfaces, and the irregularities 53 that will be formed in the intermediate region R2 described later are not formed there.

[0034] The main groove 41 and auxiliary groove 43 extend linearly in the vertical direction and are inclined to the left and right with respect to the horizontal plane. More specifically, the lower side of each groove 41 and 43 is inclined to the left. These main groove 41 and auxiliary groove 43 are formed parallel to each other and are arranged alternately in the circumferential direction of the inclined wall 32. In Figure 5, the angle of inclination between the extension direction of the grooves 41 and 43 and the horizontal plane (represented by the dashed line) is shown as θ1, and this angle θ1 is, for example, 50° to 70°.

[0035] Sub-grooves 42 are formed so as to branch off from the left and right sides of each main groove 41. Therefore, one end of each of the multiple sub-grooves 42 is provided so as to sandwich the main groove 41 from both sides and be connected to the main groove 41. More specifically, numerous sub-grooves 42 are connected from the left side of the main groove 41 at intervals in the direction of extension of the main groove 41, and numerous sub-grooves 42 are connected from the right side of the main groove 41 at intervals in the direction of extension of the main groove 41. When the main groove 41 is viewed along the direction of extension, one end of the left sub-groove 42 and one end of the right sub-groove 42 are repeatedly and alternately connected at intervals in that direction of extension. Therefore, in the direction of extension, the connection positions of the left sub-grooves 42 and the right sub-grooves 42 are different from each other.

[0036] Each sub-groove 42 is formed, for example, in a straight line. In the main groove 41, the sub-grooves 42 located on the left side in the extension direction are parallel to each other, and the sub-grooves 42 located on the right side in the extension direction are also parallel to each other. Furthermore, if the upper side of the main groove 41 is considered the tip side in the extension direction, then when viewed in the extension direction of the main groove 41, the other end of the sub-groove 42 extends toward the tip side in the extension direction relative to one end of the sub-groove 42. The other end of the sub-groove 42 is connected to the auxiliary groove 43 from the side.

[0037] As described above, the connection of the sub-grooves 42 allows us to see that, like the main groove 41, the auxiliary groove 43 also has sub-grooves 42 branching out from both its left and right sides. Furthermore, when viewed in the direction of extension of the auxiliary groove 43, the other end of the sub-groove 42 connected from the left and the other end of the sub-groove 42 connected from the right are repeatedly positioned alternately with a gap in between in that direction of extension. Note that the connection positions of the left sub-groove 42 and the right sub-groove 42 are different in the direction of extension of the auxiliary groove 43. The sub-grooves 42 have the role of accumulating droplets inside and forming a liquid film. Therefore, with respect to the main groove 41 and the auxiliary groove 43, the arrangement of numerous sub-grooves 42 on both the left and right sides, and the formation of the sub-grooves 42 extending from different positions on the left and right sides in the direction of extension, enhances the dispersion in the lower region R1 of the sub-grooves 42. In other words, the formation of the liquid film is prevented from remaining in a localized area.

[0038] With the grooves 41-43 arranged as described above, when comparing the main grooves 41 and sub-grooves 42 in a unit area of ​​any size in the circumferential direction of each part of the lower region R1, the sub-grooves 42 have a higher number density. Furthermore, if the main groove 41 and the sub-grooves 42 that sandwich the main groove 41 from both sides are considered as one pair, this pair forms a tree-like groove with the main groove 41 as the trunk and the sub-grooves 42 as the branches. Multiple such tree-like groove pairs are provided in the circumferential direction of the lower region R1 and are connected to each other via auxiliary grooves 43.

[0039] Grooves 41-43 will be explained with reference to Figures 6 and 7. Figure 6 shows a cross-section that intersects the extension direction of the main groove 41 and auxiliary groove 43, as well as the extension direction of the sub-groove 42, while Figure 7 shows a cross-section that intersects the extension direction of the sub-groove 42. If the width of the main groove 41 is L1, the width of the sub-groove 42 is L2, and the width of the auxiliary groove 43 is L3, then L1 > L2 = L3. If the depth of the main groove 41 is H1 and the depth of the auxiliary groove 43 is H3, then H1 > H3. For the sub-groove 42, the depth of one end connected to the main groove 41 is the same as the depth of the main groove 41 (depth H1), and the depth of the other end connected to the auxiliary groove 43 is the same as the depth of the auxiliary groove 43 (depth H2), so that its size increases from the other end towards the one end.

[0040] As described above, the width and depth of each groove 41-43 are such that, when comparing the cross-sectional areas of each groove 41-43 viewed in the direction of extension, the cross-sectional area of ​​the main groove 41 is larger than that of the sub-grooves 42 and auxiliary grooves 43. The state of the lower region R1 during the cleaning process will be described in detail later, but the liquid film is mainly formed by the sub-grooves 42, and the main grooves 41 and auxiliary grooves 43 are for liquid discharge, with the main groove 41 being the primary means of discharge. The sub-grooves 42 are formed in relation to the main groove 41 in the number density relationship described above, so that they can reliably perform their role in forming the liquid film.

[0041] Next, the intermediate region R2 will be explained. The intermediate region R2 has a main groove 51 and a secondary groove 52. These main groove 51 and secondary groove 52 are third grooves, and the main groove 51 is also a fourth groove. Note that the main groove 51 and secondary groove 52 are sometimes referred to collectively as grooves 51 and 52. The main groove 51, like the main groove 41 in the lower region R1, is a groove that extends linearly in the vertical direction, inclined left and right with respect to the horizontal plane when viewed from inside the cup 3, and is formed so that its lower side faces left. In Figure 5, the angle of inclination between the extension direction of the groove 51 and the horizontal plane is shown as θ2, and this angle θ2 is smaller than the angle θ1 made by the main groove 41 and auxiliary groove 43, for example, 10° to 30°.

[0042] The main grooves 51 are provided in large numbers at intervals in the circumferential direction of the intermediate region R2 and are parallel to each other. Furthermore, the lower end of each main groove 51 is connected to the upper end of either the main groove 41 or the auxiliary groove 43. Therefore, from a different perspective, the upper ends of the main groove 41 and the auxiliary groove 43 extend into the intermediate region R2, thereby forming the main groove 51.

[0043] Of the numerous main grooves 51, the main groove 51 connected to the main groove 41 has one end of a sub-groove 52 connected to it from the left and right in the direction of extension of that main groove 51. Therefore, the sub-grooves 52 are formed to branch out from the left and right in the direction of extension of the main groove 51. The other end of each sub-groove 52 is connected from the side to the main groove 51 connected to the auxiliary groove 43.

[0044] To explain in more detail, when considering the extension direction of the main groove 51 connected to the main groove 41, numerous sub-grooves 52 are connected from the left side of the main groove 51 at intervals in the extension direction, and numerous sub-grooves 52 are connected from the right side of the main groove 51 at intervals in the extension direction. Furthermore, when viewed in the extension direction, one end of the left sub-groove 52 and one end of the right sub-groove 52 are repeatedly and alternately connected at intervals in the extension direction. Therefore, in the extension direction of the main groove 51, the connection positions of the left sub-groove 52 and the right sub-groove 52 are different from each other. These sub-grooves 52 are used to form a liquid film, similar to the sub-grooves 42 in the lower region R1, but because numerous sub-grooves are provided on both the left and right sides of the main groove 51 and extend from different positions on the left and right sides of the main groove 51, they are widely distributed in the intermediate region R2, preventing the formation of the liquid film from remaining in a localized area.

[0045] In the main groove 51 described above, each sub-groove 52 provided on the left side in the extension direction is formed in a straight line parallel to each other, and each sub-groove 52 provided on the right side in the extension direction is formed in a straight line parallel to each other. If the upper side of the main groove 51 connected to the main groove 41 is considered the tip side in the extension direction, then, when viewed in the extension direction of the main groove 51, the other end of the sub-groove 52 extends toward the tip side in the extension direction relative to one end of the sub-groove 52.

[0046] With the arrangement of the main groove 51 and sub-grooves 52 as described above, if the main groove 51 connected to the main groove 41 and the sub-grooves 52 flanking the main groove 51 from both sides are considered as a pair, this pair forms a tree-like groove with the main groove 51 as the trunk and the sub-grooves 52 as the branches, extending from the main groove 41. Multiple such tree-like groove pairs are provided in the circumferential direction of the lower region R1 and are connected to each other via the main grooves 51 connected to the auxiliary grooves 43.

[0047] The main groove 51 and the secondary groove 52 will be further explained with reference to Figures 8 and 9. Figures 8 and 9 show cross-sections intersecting the extension direction of the main groove 51 and the secondary groove 52, respectively. The width L4 of the main groove 51 and the width L5 of the secondary groove 52 are the same as the widths L2 and L3 of the secondary groove 42 and auxiliary groove 43 in the lower region R1, respectively, and are therefore smaller than the width L1 of the main groove 41 in the lower region R1. The height H4 of the main groove 51 and the height H5 of the secondary groove 52 are the same as the height H3 of the auxiliary groove 43, respectively, and are therefore smaller than the height of the main groove 41. Therefore, the cross-sectional areas of the main groove 51 and the secondary groove 52 are smaller than the cross-sectional area of ​​the main groove 41. As will be described later, the outside of the grooves 51 and 52 is formed with irregularities 53, but the depths H4 and H5 of the grooves 51 and 52 are the depths based on the protrusions of the irregularities 53 (i.e., the distance between the top of the protrusions and the bottom surface of the groove).

[0048] The reason for not providing the main groove 41 in the intermediate region R2, and for configuring both the main groove 51 and the sub-groove 52 to have relatively small cross-sectional areas as described above, is to prevent turbulence in the downdraft airflow toward the wafer W. In other words, if a groove with a large width or depth is provided in the intermediate region R2, which is near the opening of the cup 3, a large portion of the downdraft airflow will flow into that groove and be guided by the groove, potentially resulting in a swirling flow. This prevents such turbulence in the airflow and, consequently, prevents defects in the processing of the wafer W.

[0049] Incidentally, the area outside the main groove 51 and sub-groove 52 in the intermediate region R2 is treated by sandblasting, thereby forming fine irregularities 53. The width of the recesses (the distance between the tops of the protrusions) that make up these irregularities 53 is smaller than the widths L1 to L5 of each of the grooves mentioned above. In other words, the irregularities in the intermediate region R2 are finer than the irregularities formed by the grooves 41 to 43 in the lower region R1. These irregularities 53 in the intermediate region R2 play a role in efficiently collecting mist. As mentioned above, since the mist is minute, it can enter the recesses that make up the irregularities 53, and is captured by colliding with the protrusions that make up the irregularities 53, accumulating in the recesses and easily forming a liquid film. Mist that is later scattered toward the recesses adheres to this liquid film and is collected, preventing it from adhering to the wafer W.

[0050] Next, let's describe the upper end region R3. This upper end region R3, which includes the upper end of cup 3, is made of a smooth surface. Therefore, the grooves 41-43, 51, and 52 described in the description of regions R1 and R2, as well as the aforementioned irregularities 53, are not formed there. Consequently, the main groove 51 and the sub-groove 52 are abruptly cut off midway towards the upper end of cup 3. Because it is a smooth surface, droplets and mist are less likely to adhere to the upper end region R3, and as previously mentioned, the cleaning liquid is less likely to spread around due to the surface tension of the cleaning liquid.

[0051] The following describes the state of the lower region R1 and the intermediate region R2 when the wafer W is cleaned in the developing apparatus 1, with reference to Figures 10 and 11. Figure 10 shows the flow of the cleaning solution in the lower region R1 with dotted arrows. Figure 11 is a schematic cross-section viewed from the direction of arrow AA' in Figure 10, showing the state of the sub-grooves 42 arranged vertically. In the figures shown so far, the width of each groove 41-43, 51, and 52 has been shown as being constant in the depth direction, but in Figure 11, the sub-grooves 42 are shown as having a shape in which the width narrows towards the depth. Each groove 41-43, 51, and 52 may or may not be narrowed in this way.

[0052] When cleaning fluid is supplied to the wafer W and rotational shaking begins, droplets D of the cleaning fluid that are scattered toward the lower region R1 enter the sub-groove 42 (Figure 11(a)). As the shaking of the cleaning fluid continues, more droplets D enter the sub-groove 42, forming a liquid film D1 (Figure 11(b)). Subsequently, droplets D that are scattered toward the sub-groove 42 collide with this liquid film D1, are attracted to the liquid film D1 by the surface tension of the cleaning fluid, and become one with the liquid film D1. That is, they are captured by the liquid film D1 without bouncing back toward the wafer W (Figure 11(c)).

[0053] Furthermore, droplets D scattered in the region between the sub-grooves 42 collide with that region and spread, with a portion of them coming into contact with and integrating with the liquid film D1 inside the sub-grooves 42. In other words, a liquid film D1 is also formed in the region between the sub-grooves 42, and the region where the liquid film D1 is formed is not limited to inside the sub-grooves 42. Figure 11(c) shows the state in which a liquid film D1 is formed both inside and between the sub-grooves 42, and droplets D scattered into the lower region R1 are subsequently captured by the liquid film D1 formed over such a wide area.

[0054] Although a liquid film D1 is formed in and around the sub-groove 42, droplets are scattered circumferentially from the wafer W, so droplets D are scattered throughout the entire circumferential region R1. In other words, droplets D are also scattered into the main groove 41 and auxiliary groove 43, and the formation range of the liquid film D1 extends within these main groove 41 and auxiliary groove 43, trapping droplets D in each region where the liquid film D1 is formed. Therefore, although the main groove 41 and auxiliary groove 43 were described as grooves for draining liquid, they are also used for forming the liquid film D1.

[0055] Regarding the cleaning fluid forming a liquid film D1 in the main groove 41 and auxiliary groove 43, because these main grooves 41 and auxiliary groove 43 are formed in a vertical direction, gravity causes the fluid to flow downward along these main grooves 41 and auxiliary groove 43. Furthermore, the cleaning fluid forming a liquid film D1 in each sub-groove 42 flows towards the main groove 41 due to the action of gravity and other factors, as shown in Figure 10. To explain the other factors mentioned above, as previously stated, the sub-grooves 42 are connected to the main groove 41 and auxiliary groove 43, but because the opening area relative to the main groove 41 is larger than the opening area relative to the auxiliary groove 43, the fluid flows more easily towards the main groove 41 than towards the auxiliary groove 43. In addition, due to the difference in the cross-sectional area of ​​the grooves, a larger liquid flow is formed in the main groove 41 than in the auxiliary groove 43, and the surface tension from this liquid flow strongly acts on the liquid film D1 in the sub-grooves 42. Therefore, the fluid in the sub-grooves 42 tends to flow towards the main groove 41 rather than towards the auxiliary groove 43. The cleaning fluid that flows downwards through the main groove 41 and auxiliary groove 43 flows from their lower ends through the narrow channel 18 formed by the body 31 and the descending wall 38, and flows into the drain port 30.

[0056] Furthermore, since the main groove 51 in the intermediate region R2 is connected to the main groove 41 and auxiliary groove 43, as will be described later, the cleaning liquid that splashes into the intermediate region R2 and flows through the main groove 51 also flows into the main groove 41 and auxiliary groove 43 and is discharged downward along the main groove 41 and auxiliary groove 43. In this way, the cleaning liquid splashes from the wafer W and the liquid film D1 takes it in, while the discharge of the cleaning liquid constituting the liquid film D1 continues, so that the formation of the liquid film D1 is maintained in the lower region R1 by an appropriate amount of cleaning liquid.

[0057] The state of the intermediate region R2 when the liquid film D1 is formed in the lower region R1 is described below. Liquid droplets D of the cleaning solution that have been shaken off the wafer W are also scattered into this intermediate region R2. Figure 12 shows a plan view of the wafer W at the time of shaking off. As described above, the angle of the main groove 51 formed in the intermediate region R2 with respect to the horizontal plane is relatively small. As shown in Figure 12, in a plan view, each liquid droplet D is scattered from the peripheral edge of the rotating wafer W in the tangential direction of the wafer W, but as shown in the schematic diagram in Figure 13, the direction in which these liquid droplets D are scattered and the extension direction of the main groove 51 are roughly coincide.

[0058] Therefore, the probability of droplets D scattered toward the main groove 51 colliding with the corners forming the opening edge of the main groove 51 and bouncing back onto the wafer W can be kept low, and they can easily enter the main groove 51 as shown in the schematic diagram of Figure 14. In this way, the main groove 51 is formed in an elongation direction that facilitates the entry of droplets D, so that droplets D accumulate within the main groove 51 and a liquid film D1 is formed.

[0059] Furthermore, droplets D are scattered toward the sub-groove 52, and a liquid film D1 is formed inside it. Then, droplets D scattered in the main groove 51 and sub-groove 52 where the liquid film D1 has been formed are captured by the liquid film D1, become integrated with the liquid film D1, and are prevented from scattering onto the wafer W. In addition, droplets D scattered outside the main groove 51 and outside the sub-groove 52 collide with those areas and spread out, and a portion of them come into contact with the liquid film D1 in the main groove 51 or the liquid film D1 in the sub-groove 52 and become integrated with it. In other words, a liquid film D1 is also formed in the area outside the groove, and the area where the liquid film D1 is formed is not limited to inside the main groove 51 and the sub-groove 52.

[0060] The cleaning fluid that forms the liquid film D1 in the main groove 51 flows down to the main groove 41 due to gravity and is discharged. Similarly, the cleaning fluid that forms the liquid film D1 in the sub-groove 52 is drawn to the liquid flow in the main groove 51 by gravity and the surface tension of the cleaning fluid, and flows towards the main groove 51 and is discharged toward the main groove 41. While the liquid that makes up the liquid film D1 is discharged in this way, new liquid droplets D are collected, thereby maintaining the liquid films in the main groove 51 and the sub-groove 52.

[0061] Furthermore, mist generated from the cleaning solution supplied to the wafer W floats on the wafer W. As described above, this mist is captured by the irregularities 53 and forms a liquid film. Subsequently, mist supplied to the irregularities 53 is captured by this liquid film.

[0062] As described above, the cleaning process proceeds while droplets D are collected by the liquid film D1 in the lower region R1, and droplets D and mist are collected by the liquid film D1 in the intermediate region D2. Then, the supply of cleaning liquid to the wafer W stops, and the scattering of cleaning liquid from the wafer W stops. While the supply of droplets D to the lower region R1 and the supply of droplets D and mist to the intermediate region D2 ceases, the discharge of cleaning liquid through each groove continues. Figure 11(d) shows the state in which cleaning liquid is discharged from the sub-groove 42.

[0063] Furthermore, the cleaning fluid that had formed a liquid film D1 outside each groove 41-43 and 51, 52 also enters the grooves due to gravity and is discharged from the grooves. Once the cleaning process is complete, the liquid film D1 disappears from both inside and outside each groove due to the discharge of the cleaning fluid. The above-described state is repeated each time the wafer W is processed. Therefore, for the sub-groove 42, the state shown in Figures 11(a) to (d) is repeated.

[0064] Incidentally, although it has been stated that the liquid film D1 is continuously formed in the sub-grooves 42, main grooves 51, and sub-grooves 52 during the above cleaning process, depending on the amount of cleaning liquid scattered from the wafer W and the amount of cleaning liquid discharged from the main grooves 41 and auxiliary grooves 43, the formation of the liquid film D1 may be intermittent. Even with such intermittent formation of the liquid film D1, the cleaning liquid collection effect can be obtained by the liquid film D1.

[0065] Incidentally, when collecting the cleaning solution by forming a liquid film on the inner surface of cup 3, it is conceivable to use a configuration such as providing a mesh-like member on the inner surface or forming recesses with relatively large openings dispersed on the inner surface. However, in such a configuration, it is conceivable that a relatively large amount of cleaning solution would be retained in these meshes or recesses for a long period of time. Such cleaning solution may deteriorate and, when a wafer W is newly brought into the developing apparatus 1 for processing, may adhere to the wafer W, potentially affecting the processing.

[0066] However, as previously described, the inner surface of cup 3 is provided with a set consisting of a sub-groove 42 and a main groove 41 that extends vertically and has a larger cross-sectional area than the sub-groove 42, forming a liquid film D1, and the cleaning liquid that forms the liquid film D1 is discharged downward from the main groove 41. Therefore, with respect to cup 3, it is prevented that deteriorated cleaning liquid is supplied to the wafer W, and a liquid film is formed on the inner surface to collect droplets D of cleaning liquid scattered from the wafer W, suppressing the splashing of droplets D on the inner surface and preventing the droplets D from adhering to the periphery of the wafer W. Therefore, it is possible to suppress a decrease in the yield of semiconductor products manufactured from wafer W.

[0067] Furthermore, multiple sets of the main groove 41 and sub-grooves 42 are provided in the circumferential direction in the lower region R1 of the cup 3. Therefore, the droplet D collection effect can be obtained over a wide area of ​​the inner circumferential surface of the cup 3. In other words, the bounce of droplet D off the inner circumferential surface of the cup 3 can be suppressed more reliably, preventing it from adhering to the wafer W. In addition, sub-grooves 42 branch off from different positions above and below on the left and right sides of the main groove 41. By providing a large number of sub-grooves 42 in such a layout, the droplet D collection effect can be obtained over a wide area in both the circumferential and vertical directions of the inner circumferential surface of the cup 3.

[0068] The main groove 41 is inclined to the left and right with respect to the horizontal plane when viewed from the inner circumferential surface of the cup 3. Therefore, the flow of the cleaning liquid within the main groove 41 is relatively gentle. As previously mentioned, the cleaning liquid in the sub-groove 42 flows into the main groove 41 due to the surface tension of the cleaning liquid. Therefore, suppressing the flow of the cleaning liquid within the main groove 41 also suppresses the discharge of the cleaning liquid from the sub-groove 42 into the main groove 41. Consequently, the inclination of the main groove 41 allows for the formation of the liquid film D1 during the cleaning process to continue for a long time within both the main groove 41 and the sub-groove 42, resulting in a high collection effect for the liquid droplets D. The auxiliary groove 43, which also plays a role in discharging the cleaning liquid downwards along with the main groove 41, is inclined in the same way as the main groove 41. Therefore, the flow of the cleaning liquid from the auxiliary groove 43 is also suppressed, and the liquid film D1 is maintained more reliably for a relatively long time in each groove 41 to 43.

[0069] Furthermore, in cup 3, the intermediate region R2 is configured to have finer irregularities than the lower region R1, thereby preventing turbulence in the downward airflow while allowing for the collection of cleaning fluid droplets and mist. In the example described above, the main groove 41 is not formed in the intermediate region R2, resulting in the finer irregularities of the intermediate region R2.

[0070] Now, let's elaborate on why the intermediate region R2 has finer irregularities than the lower region R1. Making the intermediate region R2 have finer irregularities means that the configuration will have less impact on the downdraft than if the lower region R1 were placed in the intermediate region R2, and the main groove 41 may be provided in the intermediate region R2. In other words, in the above example, the main groove 41 extends into the intermediate region R2 as the main groove 51 with a different width and depth, but it may also extend into the intermediate region R2 as the main groove 41 with the same width and depth. Let the ratio of the opening area of ​​the sub-groove 42 to the opening area of ​​the main groove 41 in a unit area of ​​the intermediate region R2 be the first ratio, and the ratio of the opening areas of the main groove 51 and sub-groove 52 to the opening area of ​​the main groove 41 in a unit area of ​​the intermediate region R2 be the second ratio. If there are no grooves in the intermediate region R2 with a larger opening area than the main groove 41 when viewed in the extension direction, and the first ratio < the second ratio, then the intermediate region R2 is considered to have finer irregularities. Specifically, for example, if only a few of the aforementioned main grooves 41 extend into the intermediate region R2, the first ratio < the second ratio will be observed. Furthermore, as defined above, the case where no main grooves 41 are provided in the aforementioned intermediate region R2 also falls under the category of first ratio < second ratio.

[0071] Incidentally, suppose that the main groove 51 and sub-groove 52 are not formed in the intermediate region R2, and only sandblasting has been performed. In the case where the resulting surface irregularities 53 are formed such that the spacing between the protrusions is smaller than the opening width of each of the main groove 41, sub-groove 42, and auxiliary groove 43, the intermediate region R2 is still considered to have finer irregularities than the lower region R1.

[0072] The fact that the intermediate region R2 has finer irregularities than the lower region R1 includes irregularities composed of grooves and irregularities composed of other types of irregularities. However, these irregularities other than grooves refer to irregularities intentionally formed by sandblasting, plasma treatment, etching, etc., and do not include irregularities that are inevitably formed during the manufacturing process of cup 3. Specifically, irregularities other than grooves formed by sandblasting, etc., are, for example, irregularities with a surface roughness Ra of 0.5 μm or more.

[0073] Incidentally, in the example above, the main groove 51 and sub-grooves 52 are not provided at all on the inner circumferential surface 31A that forms the narrow channel 18, thereby keeping the retention performance of the cleaning fluid in the narrow channel 18 low and preventing the cleaning fluid from accumulating. However, the main groove 51 and sub-grooves 52 may also be formed on this inner circumferential surface 31A. For example, the main groove 41 of the lower region R1 may extend to this inner circumferential surface 31A, and sub-grooves 42 may be formed on the inner circumferential surface 31A so as to branch off from the main groove 51, similar to the lower region R1. However, in order to prevent the accumulation of the cleaning fluid, it is preferable that the ratio of the opening area of ​​the sub-grooves 42 per unit area formed on the inner circumferential surface 31A is smaller than the ratio of the opening area of ​​the sub-grooves 42 per unit area in the lower region R1, so as not to result in excessive retention performance. Specifically, for example, the spacing of the sub-grooves 42 along the extension direction of the main groove 41 can be set such that the spacing is larger on the inner circumferential surface 31A than on the lower side region R1, and the number of sub-grooves 42 on the inner circumferential surface 31A is smaller than on the lower side region R1, thereby achieving the above-mentioned ratio of opening areas. In addition, in order to prevent the cleaning solution, which is pure water, from accumulating in the narrow channel 18, the inner circumferential surface 31A may be made of a material with higher water repellency than each of the lower side region R1, the intermediate region R2, and the upper end region R3.

[0074] Regarding the upper end region R3, as mentioned above, in order to lower the retention performance of the cleaning solution, which is pure water, compared to the intermediate region R2 (i.e., to increase water repellency), the main grooves 51, sub-grooves 52, and irregularities 53 are not provided, and it is made a smooth surface. However, by providing some main grooves 51 and sub-grooves 52, or by providing irregularities 53, the retention performance of the cleaning solution may be slightly higher than if it were a smooth surface. If main grooves 51 and sub-grooves 52 are provided, in order to lower the retention performance of the cleaning solution compared to the intermediate region R2, for example, the ratio of the opening area of ​​the sub-grooves 52 per unit area should be smaller in the upper end region R3 than in the intermediate region R2. If irregularities 53 are provided in the upper end region R3, for example, the surface roughness of the irregularities 53 in the upper end region R3 should be made larger than the surface roughness of the irregularities 53 in the intermediate region R2 (so that the protrusions are relatively far apart) to reduce the adhesion of mist and lower the retention performance.

[0075] The pattern of the lower region R1 described above is a modified version of the groove pattern formed on the cochlea. Figure 15 shows an example in which a pattern similar to the groove pattern of the cochlea is formed over the entire inner surface of the inclined wall 32. In other words, the pattern shown in Figure 15 is formed over the regions R1 to R3 described above. Note that, like Figure 5, Figure 15 is represented as a plane by canceling out the curvature of the inner surface of the curved inclined wall 32. The secondary groove 42 shown in Figure 5 is straight, but as shown in Figure 15, the secondary groove 42 may be curved.

[0076] Furthermore, the shape of each groove described above can be changed as appropriate. For example, the main grooves 41, 51 and auxiliary groove 43 extending in the vertical direction are straight in the examples described above, but they may also be curved. Also, for example, in the above example, the tree-like set of grooves is connected to each other, but they may also be separated. Specifically, for example, the auxiliary groove 43 may not be provided, and different sets of sub-grooves 42 may not be connected to each other. Also, the sub-grooves 42 may extend in a way that branches off from the main grooves.

[0077] Incidentally, while we have described the developing apparatus 1 as supplying cleaning solution to the wafer W and cup 3 collecting this cleaning solution to form a liquid film, it is also possible to, for example, shake off the developing solution before shaking off the cleaning solution, thereby forming a liquid film on cup 3 with the developing solution and suppressing splashes of developing solution droplets back onto the cup. In other words, the processing liquid that forms the liquid film may be the developing solution.

[0078] Furthermore, the liquid processing apparatus may supply a coating solution for forming a coated film as the processing liquid to the center of a rotating wafer W, and perform film formation on the wafer W by spin coating. This coating solution contains a solvent and solidifying components other than the solvent, and examples include resists, chemicals for forming anti-reflective films, or chemicals for forming insulating films. During spin coating, when excess coating solution is shaken off the wafer W, the coating solution is scattered toward the inner surface of the cup 3, forming a liquid film similar to when a cleaning solution is used, and collecting droplets of the coating solution. This coating solution is then supplied into each groove to form a liquid film.

[0079] Incidentally, similar to the case where a liquid film is formed with a cleaning solution, the coating liquid constituting the above liquid film is discharged from each groove during the processing of the wafer W. However, suppose that a small amount of coating liquid remains in each groove. However, the coating liquid that continues to be scattered from the wafer W and supplied to each groove during the processing of the wafer W prevents the coating liquid remaining in the grooves from solidifying. Similarly, even if coating liquid remains in each groove after the processing of the wafer W is completed, the processing liquid supplied to the grooves when processing subsequent wafer Ws prevents the coating liquid from solidifying. In other words, it is prevented that solidified coating liquid will become particles and adhere to the wafer W.

[0080] Incidentally, it was stated that when the wafer W rotates, the processing liquid is scattered from the wafer W and a liquid film is formed on the cup 3. However, it is also possible that the impact when the processing liquid is discharged from the nozzle onto the wafer W causes it to scatter from the wafer W onto the cup 3 and form a liquid film. Therefore, the substrate processing apparatus may be configured so that the wafer W does not rotate. In such a case, the main groove 51 in the intermediate region R2 of the cup 3, which was intended to efficiently collect the processing liquid from the rotating wafer W as described above, does not need to be provided. Specifically, for example, in the above example, the part described as the intermediate region R2 may also have the same groove pattern as the lower region R1. In other words, the main groove 41 and auxiliary groove 43 can extend from the lower region R1 to the intermediate region R2, and in the intermediate region R2, the auxiliary groove 43 can branch off from the main groove 41.

[0081] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above embodiments may be omitted, replaced, modified and combined in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0082] W wafer 3 cups 41 Main groove 42 Sub-grooves R1 Lower side region

Claims

1. A cup that is rotatable for liquid treatment of a substrate, enclosing the substrate and having an opening at the top, The inner circumferential surface of the cup has a first height region and a second height region located above the first height region and closer to the opening. The first height region and the second height region are each provided with a plurality of grooves in the circumferential direction. The groove in the first height region and the groove in the second height region are connected at their respective ends, and their extension directions are different. In the first height region, one groove and another groove are connected to each other by a first sub-groove. A cup in which one groove and another groove in the second height region are connected to each other by a second sub-groove.

2. A cup that is rotatable for liquid treatment of a substrate, enclosing the substrate and having an opening at the top, The inner circumferential surface of the cup has a first height region and a second height region located above the first height region and closer to the opening. The first height region and the second height region are each provided with a plurality of grooves in the circumferential direction. The groove in the first height region and the groove in the second height region are connected at their respective ends, and their extension directions are different. The groove in the second height region is a cup with a smaller cross-sectional area than the groove in the first height region.

3. The first sub-groove has a smaller cross-sectional area than the groove in the first height region. The cup according to claim 1, wherein the second sub-groove has a smaller cross-sectional area than the groove in the first height region.

4. The cup according to claim 1, wherein the first height region has a range extending from a position above the surface of the substrate to a position below the substrate.

5. The cup according to any one of claims 1, 3, or 4, wherein the groove in the second height region has a smaller cross-sectional area than the groove in the first height region.

6. The inner circumferential surface of the cup further includes an upper end region that includes the upper end, The cup according to any one of claims 1 to 4, wherein the upper end region does not have a groove that connects to the groove in the second height region.

7. A liquid processing apparatus comprising a rotatable cup surrounding a substrate for liquid treatment of the substrate, The inner circumferential surface of the cup has a first height region and a second height region located above the first height region and close to the opening at the top of the cup. The first height region and the second height region are each provided with a plurality of grooves in the circumferential direction. The groove in the first height region and the groove in the second height region are connected at their respective ends, and their extension directions are different. In the first height region, one groove and another groove are connected to each other by a first sub-groove. A liquid processing apparatus in which one groove and another groove in the second height region are connected to each other by a second sub-groove.

8. A liquid processing apparatus comprising a rotatable cup surrounding a substrate for liquid treatment of the substrate, The inner circumferential surface of the cup has a first height region and a second height region located above the first height region and close to the opening at the top of the cup. The first height region and the second height region are each provided with a plurality of grooves in the circumferential direction. The groove in the first height region and the groove in the second height region are connected at their respective ends, and their extension directions are different. A liquid processing apparatus wherein the groove in the second height region has a smaller cross-sectional area than the groove in the first height region.

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