Substrate processing equipment

Abstract

To provide a substrate processing apparatus capable of reducing a draining amount.SOLUTION: A substrate processing apparatus 100 comprises a processing part 1, a first liquid draining pipe 12, a plurality of second draining pipes 14, a switching unit 13, and a control part 102. The processing part 1 executes a first chemical treatment, a rinse treatment, and a second chemical treatment in this order by using a first chemical liquid, a rinse liquid, and a second chemical liquid. Into the first liquid draining pipe 12, a drainage drained from the processing part 1 flows. The switching unit 13 switches a circulation destination of the drainage between the plurality of second draining pipes 14. The plurality of second draining pipes 14 contains: a first pipe 141 for the first chemical liquid; a second pipe 142 for the first chemical liquid; and a third pipe 143 for the second chemical liquid. The control part 102 controls the switching unit 13 to set the circulation destination of the drainage during the first chemical treatment to the first pipe 141, switches the circulation destination of the drainage to the second pipe 142 from the first pipe 141 during the rinse treatment, and switches the circulation destination of the drainage to the second pipe 142 from the third pipe 143 after the rinse treatment.SELECTED DRAWING: Figure 4

Description

Technical Field

[0005] , , ,

[0006]

[0001] The present invention relates to a substrate processing apparatus.

Background Art

[0002] A substrate processing apparatus that processes a substrate using a plurality of types of processing liquids is known (for example, see Patent Document 1). For example, the substrate processing apparatus of Patent Document 1 processes a wafer using SPM (sulfuric acid hydrogen peroxide aqueous solution: Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (ammonia hydrogen peroxide aqueous solution), and deionized water (Deionized water; DIW), so-called "ultra-pure water".

[0003] The substrate processing apparatus of Patent Document 1 is a single wafer processing apparatus that processes wafers one by one. The substrate processing apparatus of Patent Document 1 holds and rotates a wafer in a horizontal state, and sequentially supplies a plurality of types of processing liquids to the rotating wafer to process the wafer.

[0004] The processing liquid scattered from the rotating wafer is received by a cup disposed around the wafer. The processing liquid received by the cup flows into a drain pipe from a drain port provided at the bottom of the cup.

[0005] The processing liquid flowing into the drain pipe may be discharged to a drain line of a factory where the substrate processing apparatus is installed. For example, the drain line of the factory includes a drain line for SPM and a drain line for SC1. In this case, the substrate processing apparatus includes a switching valve that selectively switches the flow destination of the processing liquid flowing into the drain pipe between the SPM drain line and the SC1 drain line in order to avoid contact between SPM and SC1 in the drain line.

[0006] More specifically, because SPM is a highly viscous chemical solution that is difficult to flow, the substrate processing device switches the flow of the processing liquid that has entered the drain pipe from the SPM drain line to the SC1 drain line after a predetermined time (for example, 13 seconds) has elapsed since the end of substrate processing with SPM, in order to prevent SPM from contaminating the SC1 drain line. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2017-126616 [Overview of the project] [Problems that the invention aims to solve]

[0008] However, if the timing of switching the flow destination of the treated liquid flowing into the drainage piping is delayed in order to prevent the first chemical solution (e.g., SPM) from mixing with the drainage line for the second chemical solution (e.g., SC1), the amount of wastewater flowing into the first chemical solution line will increase. If treatment (recovery treatment) is required to dispose of the wastewater, an increase in the amount of wastewater will lead to an increased burden on the factory. For example, SPM contains sulfuric acid, so recovery treatment is necessary. Recovery treatment of used sulfuric acid requires a large amount of industrial water and a large amount of electricity, and an increase in the amount of wastewater will increase the burden on the factory.

[0009] The present invention has been made in view of the above problems, and its purpose is to provide a substrate processing apparatus that can reduce the amount of wastewater. [Means for solving the problem]

[0010] According to one aspect of the present invention, a substrate processing apparatus comprises a processing unit, a first drainage pipe, a plurality of second drainage pipes, a switching unit, and a control unit. The processing unit performs substrate processing on a substrate using a plurality of processing liquids. Drainage, which is the processing liquid discharged from the processing unit, flows into the first drainage pipe. The switching unit switches the destination of the drainage flowing through the first drainage pipe among the plurality of second drainage pipes. The control unit controls the switching unit. The plurality of processing liquids include a first chemical solution, a rinsing solution, and a second chemical solution different from the first chemical solution. The substrate processing includes a first chemical solution treatment using the first chemical solution, a rinsing treatment using the rinsing solution, and a second chemical solution treatment using the second chemical solution. The processing unit performs the first chemical solution treatment, the rinsing treatment, and the second chemical solution treatment in this order. The plurality of second drainage pipes include a first pipe for the first chemical solution, a second pipe for the first chemical solution, and a third pipe for the second chemical solution. The control unit controls the switching unit to direct the drainage to the first pipe during the first chemical solution treatment, to switch the drainage to the second pipe during the rinsing treatment after the first chemical solution treatment, and to switch the drainage to the third pipe after the rinsing treatment. One end of the second pipe may be connected to the switching unit. The other end of the second pipe may be connected to the first pipe.

[0011] In one embodiment, the rinsing process is a first rinsing process, and the substrate processing further includes a second rinsing process using the rinsing solution. The processing unit executes the first chemical treatment, the first rinsing process, the second chemical treatment, and the second rinsing process in this order. The plurality of second drainage pipes further include a fourth pipe for the rinsing solution. The control unit controls the switching unit to set the drainage flow destination to the first pipe during the first chemical treatment, to switch the drainage flow destination from the first pipe to the second pipe during the first rinsing process after the first chemical treatment, to switch the drainage flow destination from the second pipe to the third pipe after the first rinsing process, and to switch the drainage flow destination from the third pipe to the fourth pipe after the second chemical treatment.

[0012] In one embodiment, the switching unit includes a switching valve. The switching valve is connected to the first drain pipe, the first pipe, the second pipe, the third pipe, and the fourth pipe. Of the connection points between each of the first pipe, the second pipe, the third pipe, and the fourth pipe and the switching valve, the connection point between the first pipe and the switching valve is closest to the connection point between the switching valve and the first drain pipe.

[0013] In one embodiment, the connection point between the second pipe and the switching valve is further from the connection point between the switching valve and the first drain pipe than the connection points between the first pipe and the third pipe and the switching valve, respectively.

[0014] In one embodiment, the switching unit includes a switching valve, an on-off valve interposed in the second pipe, and an on-off valve interposed in the fourth pipe. The switching valve is connected to the first drain pipe, the first pipe, and the third pipe, and is also connected to the second pipe or the fourth pipe. The fourth pipe or the second pipe branches off from the second pipe or the fourth pipe. Of the connection points between the first pipe and the switching valve, the connection point between the third pipe and the switching valve, and the connection points between the second pipe or the fourth pipe and the switching valve, the connection point between the first pipe and the switching valve is closest to the connection point between the switching valve and the first drain pipe.

[0015] In one embodiment, the connection point between the second pipe or the fourth pipe and the switching valve is further from the connection point between the switching valve and the first drain pipe than the connection points between the first pipe and the third pipe, respectively, and the switching valve.

[0016] In one embodiment, the switching valve extends linearly in a substantially horizontal position.

[0017] In one embodiment, the first drainage pipe includes a horizontal section through which the drainage flows in a substantially horizontal direction. [Effects of the Invention]

[0018] According to the substrate processing apparatus of the present invention, the amount of drained liquid can be reduced.

Brief Description of the Drawings

[0019] [Figure 1] It is a schematic diagram of the substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 2] It is a cross-sectional view schematically showing the configuration of a processing unit included in the substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 3] It is a diagram showing the configuration around a switching unit included in the substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 4] It is another diagram showing the configuration around a switching unit included in the substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 5] It is another diagram showing the configuration around a switching unit included in the substrate processing apparatus according to Embodiment 1 of the present invention. <0000​​​​​​​​​​​​​​​​This is a block diagram showing the configuration of a control device and a switching unit included in a substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 12] This figure shows the peripheral configuration of a switching unit included in a substrate processing apparatus according to Embodiment 2 of the present invention. [Figure 13] This is another diagram showing the peripheral configuration of a switching unit included in a substrate processing apparatus according to Embodiment 2 of the present invention. [Figure 14] This is a block diagram showing the configuration of a control device and a switching unit included in a substrate processing apparatus according to Embodiment 2 of the present invention. [Modes for carrying out the invention]

[0020] Hereinafter, embodiments of the substrate processing apparatus of the present invention will be described with reference to the drawings (Figures 1 to 14). However, the present invention is not limited to the following embodiments and can be implemented in various forms without departing from its essence. In addition, explanations may be omitted where necessary to avoid repetition. Furthermore, in the figures, the same or corresponding parts are denoted by the same reference numerals and their descriptions are not repeated.

[0021] In the substrate processing apparatus according to the present invention, the "substrate" to be processed can be various types of substrates, including semiconductor wafers, photomask glass substrates, liquid crystal display glass substrates, plasma display glass substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates. The embodiments of the present invention will be described below primarily using a disc-shaped semiconductor wafer as an example, but the substrate processing apparatus according to the present invention can be similarly applied to various types of substrates other than the semiconductor wafers mentioned above. Furthermore, the substrate shape is not limited to a disc shape; the substrate processing apparatus according to the present invention can be applied to substrates of various shapes.

[0022] [Embodiment 1] Embodiment 1 of the present invention will be described below with reference to Figures 1 to 11. First, the substrate processing apparatus 100 of this embodiment will be described with reference to Figure 1. Figure 1 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. More specifically, Figure 1 is a schematic plan view of the substrate processing apparatus 100. The substrate processing apparatus 100 processes substrates W using multiple types of processing liquids. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus and processes substrates W one at a time. Hereinafter, processing substrates W may be referred to as "substrate processing".

[0023] As shown in Figure 1, the substrate processing apparatus 100 comprises a plurality of processing units 1, a fluid cabinet 100A, a plurality of fluid boxes 100B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101.

[0024] Each load port LP accommodates multiple substrates W stacked on top of each other. Each substrate W may have, for example, a mask (resist film) of unwanted resist attached to it.

[0025] The indexer robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transports the substrate W between the indexer robot IR and the processing unit 1. Alternatively, a temporary placement platform (path) for the substrate W may be provided between the indexer robot IR and the center robot CR, and the substrate W may be indirectly transferred between the indexer robot IR and the center robot CR via the placement platform.

[0026] Multiple processing units 1 form multiple towers TW (four towers TW in Figure 1). The multiple towers TW are arranged to surround the central robot CR in a plan view. Each tower TW contains multiple processing units 1 (three processing units 1 in Figure 1) stacked vertically.

[0027] The fluid cabinet 100A contains the processing liquid. Each fluid box 100B corresponds to one of the multiple towers TW. The processing liquid in the fluid cabinet 100A is supplied to all the processing units 1 included in the tower TW corresponding to one of the fluid boxes 100B via one of the fluid boxes 100B.

[0028] Each of the processing units 1 processes the substrate W using multiple types of processing solutions. In other words, each of the processing units 1 performs substrate processing on the substrate W. Specifically, the processing unit 1 processes the substrate W by sequentially supplying multiple types of processing solutions to the substrate W. The multiple types of processing solutions include a chemical solution and a rinsing solution. The chemical solution includes a first chemical solution and a second chemical solution. In this embodiment, the first chemical solution is SPM (Sulfuric Acid Hydrogen Peroxide Mixture), and the second chemical solution is SC1 (Ammonia Hydrogen Peroxide Mixture). SPM is a mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2). SC1 is a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), and water (H2O).

[0029] When SPM is supplied to the substrate W, organic matter adhering to the surface of the substrate W is removed. Specifically, SPM is used to exfoliate the resist film. When SC1 is supplied to the upper surface of the substrate W, particles adhering to the upper surface of the substrate W are removed. More specifically, SC1 is used for dissolving and removing organic matter, and for exfoliating and removing insoluble particles.

[0030] In this embodiment, the rinsing solution is deionized water (DIW), also known as "ultrapure water." However, the rinsing solution is not limited to deionized water. For example, the rinsing solution may be carbonated water, electrolyzed ionized water, hydrogen water, ozonated water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm).

[0031] The first chemical solution is a highly viscous chemical solution. Specifically, the viscosity of the first chemical solution is greater than that of the second chemical solution and the rinsing solution. In this embodiment, the first chemical solution is SPM. SPM contains sulfuric acid. Sulfuric acid is a highly viscous chemical solution. Therefore, SPM is a highly viscous chemical solution.

[0032] The processing unit 1 supplies the first chemical solution, the second chemical solution, and the rinse solution to the substrate W in the order of first chemical solution, rinse solution, second chemical solution, and rinse solution. In this embodiment, the processing unit 1 supplies SPM, rinse solution (deionized water), and SC1 to the substrate W in the order of SPM, rinse solution (deionized water), SC1, and rinse solution (deionized water). More specifically, the processing unit 1 supplies SPM, hydrogen peroxide solution (a component of SPM), rinse solution (deionized water), and SC1 to the substrate W in the order of SPM, hydrogen peroxide, rinse solution (deionized water), SC1, and rinse solution (deionized water).

[0033] Next, the control device 101 will be described. The control device 101 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 101 controls the processing unit 1, the load port LP, the indexer robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a storage unit 103.

[0034] The control unit 102 controls the operation of each part of the substrate processing apparatus 100 based on various information stored in the memory unit 103. The control unit 102 has, for example, a processor. The control unit 102 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as its processor. Alternatively, the control unit 102 may have a general-purpose arithmetic unit or a dedicated arithmetic unit.

[0035] The storage unit 103 stores various information for controlling the operation of the substrate processing device 100. For example, the storage unit 103 stores data and computer programs. The various information (data) includes recipe data. The recipe data indicates a recipe that defines the processing content, processing conditions, and processing procedure for the substrate W. The recipe includes various setting values ​​for when the substrate processing is executed as processing conditions.

[0036] The storage unit 103 has a main memory. The main memory is, for example, a semiconductor memory. The storage unit 103 may further have an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may also include removable media.

[0037] Next, the substrate processing apparatus 100 of this embodiment will be further described with reference to Figures 1 and 2. Figure 2 is a schematic cross-sectional view showing the configuration of the processing unit 1 included in the substrate processing apparatus 100 of this embodiment.

[0038] As shown in Figure 2, the processing unit 1 includes a processing chamber 2, a substrate holding unit 3, a substrate rotating unit 4, a first chemical supply unit 5, a first nozzle moving mechanism 6, a second chemical supply unit 7, a second nozzle moving mechanism 8, a rinse liquid supply unit 9, and a liquid receiving unit 11.

[0039] The substrate W is brought into the processing chamber 2 and processed within the processing chamber 2. The processing chamber 2 has a roughly box shape. The processing chamber 2 houses a substrate holding section 3, a substrate rotating section 4, a part of the first chemical supply section 5, a first nozzle moving mechanism 6, a part of the second chemical supply section 7, a second nozzle moving mechanism 8, a part of the rinse liquid supply section 9, and a liquid receiving section 11. The processing chamber 2 is, for example, a chamber.

[0040] The substrate holder 3 holds the substrate W. The operation of the substrate holder 3 is controlled by the control device 101 (control unit 102). More specifically, the substrate holder 3 holds the substrate W in a horizontal position. The substrate holder 3 is, for example, a spin chuck. The substrate holder 3 may have a spin base 31 and a plurality of chuck members 32 (four chuck members 32 in Figure 2).

[0041] The spin base 31 is substantially disc-shaped and supports a plurality of chuck members 32 in a horizontal position. The plurality of chuck members 32 are arranged on the periphery of the spin base 31. The plurality of chuck members 32 grip the periphery of the substrate W. The plurality of chuck members 32 hold the substrate W in a horizontal position. The operation of the plurality of chuck members 32 is controlled by the control device 101 (control unit 102). The plurality of chuck members 32 are arranged so that the center of the substrate W coincides with the center of the spin base 31.

[0042] The substrate rotating unit 4 rotates the substrate W and the substrate holding unit 3 together around a first rotation axis AX1 that extends vertically. The operation of the substrate rotating unit 4 is controlled by the control device 101 (control unit 102).

[0043] More specifically, the substrate rotation unit 4 rotates the spin base 31 around the first rotation axis AX1. Therefore, the spin base 31 rotates around the first rotation axis AX1. As a result, the substrate W held by the substrate holding unit 3 rotates around the first rotation axis AX1. More specifically, the first rotation axis AX1 passes through the center of the spin base 31. Therefore, the spin base 31 rotates with its own center as the center of rotation. Also, as already explained, the substrate holding unit 3 holds the substrate W such that its center coincides with the center of the spin base 31. Therefore, the substrate W rotates with its own center as the center of rotation.

[0044] The substrate rotating section 4 includes, for example, a motor body 41 and a shaft 42. The shaft 42 is coupled to the spin base 31. The motor body 41 rotates the shaft 42. As a result, the spin base 31 rotates. The operation of the motor body 41 is controlled by a control device 101 (control unit 102).

[0045] Next, the first chemical solution supply unit 5 will be described. The first chemical solution supply unit 5 supplies the first chemical solution to the substrate W held by the substrate holding unit 3. More specifically, the first chemical solution supply unit 5 supplies the first chemical solution to the rotating substrate W. In this embodiment, the first chemical solution supply unit 5 supplies SPM to the substrate W.

[0046] More specifically, as shown in Figure 2, the first chemical supply unit 5 includes a first nozzle 51, a first component supply pipe 52, a second component supply pipe 53, a first component on-off valve 54, a first flow rate control valve 55, a heater 56, a second component on-off valve 57, and a second flow rate control valve 58.

[0047] The processing chamber 2 houses the first nozzle 51, a portion of the first component supply piping 52, and a portion of the second component supply piping 53. In this embodiment, the first component on-off valve 54, the first flow rate control valve 55, the heater 56, the second component on-off valve 57, and the second flow rate control valve 58 are located outside the processing chamber 2. Specifically, the first component on-off valve 54, the first flow rate control valve 55, the heater 56, the second component on-off valve 57, and the second flow rate control valve 58 are housed in the fluid box 100B described with reference to Figure 1.

[0048] The first nozzle 51 discharges the first chemical solution (SPM) from above the rotating substrate W toward the upper surface of the substrate W. As a result, the first chemical solution (SPM) is supplied to the substrate W, and a liquid film of the first chemical solution (SPM) is formed on the upper surface of the substrate W.

[0049] In this embodiment, after the discharge of SPM is completed, the first nozzle 51 discharges hydrogen peroxide (a component of the first chemical solution) from above the rotating substrate W toward the upper surface of the substrate W. As a result, hydrogen peroxide is supplied to the substrate W, and a liquid film of hydrogen peroxide is formed on the upper surface of the substrate W.

[0050] The first component supply pipe 52 is a tubular member, and one end of the first component supply pipe 52 is connected to the first nozzle 51. The first component supply pipe 52 supplies sulfuric acid (one component of the first chemical solution) to the first nozzle 51.

[0051] The second component supply pipe 53 is a tubular member, and one end of the second component supply pipe 53 is connected to the first nozzle 51. The second component supply pipe 53 supplies hydrogen peroxide (one component of the first chemical solution) to the first nozzle 51.

[0052] The first component shut-off valve 54 is interposed in the first component supply piping 52. The first component shut-off valve 54 controls the supply of sulfuric acid to the first nozzle 51 and the stopping of the supply of sulfuric acid to the first nozzle 51.

[0053] Specifically, the first component on-off valve 54 is switchable between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the first component on-off valve 54. The actuator for the first component on-off valve 54 is, for example, a pneumatic actuator or an electric actuator. When the first component on-off valve 54 is in the open state, sulfuric acid flows through the first component supply pipe 52 to the first nozzle 51. On the other hand, when the first component on-off valve 54 is in the closed state, the flow of sulfuric acid through the first component supply pipe 52 stops.

[0054] The first flow control valve 55 is interposed in the first component supply piping 52. The first flow control valve 55 adjusts the flow rate of sulfuric acid flowing through the first component supply piping 52. Specifically, the opening degree of the first flow control valve 55 is adjustable. The control device 101 (control unit 102) controls the opening degree of the first flow control valve 55. The actuator of the first flow control valve 55 is, for example, an electric actuator. Sulfuric acid flows through the first component supply piping 52 at a flow rate corresponding to the opening degree of the first flow control valve 55.

[0055] The heater 56 is interposed in the first component supply pipe 52. The heater 56 heats the sulfuric acid flowing through the first component supply pipe 52. The start and stop of the heater 56 are controlled by the control device 101 (control unit 102). The control device 101 (control unit 102) may also control the temperature of the heater 56 or a set temperature. The heater 56 heats the sulfuric acid flowing through the first component supply pipe 52 so that the temperature of the SPM is 100°C or higher.

[0056] The second component shut-off valve 57 is interposed in the second component supply piping 53. The second component shut-off valve 57 controls the supply of hydrogen peroxide to the first nozzle 51 and the cessation of the supply of hydrogen peroxide to the first nozzle 51.

[0057] Specifically, the second component on-off valve 57 is switchable between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the second component on-off valve 57. The actuator for the second component on-off valve 57 is, for example, a pneumatic actuator or an electric actuator. When the second component on-off valve 57 is in the open state, hydrogen peroxide solution flows to the first nozzle 51 via the second component supply pipe 53. On the other hand, when the second component on-off valve 57 is in the closed state, the flow of hydrogen peroxide solution via the second component supply pipe 53 stops.

[0058] The second flow control valve 58 is interposed in the second component supply piping 53. The second flow control valve 58 adjusts the flow rate of hydrogen peroxide solution flowing through the second component supply piping 53. Specifically, the opening degree of the second flow control valve 58 is adjustable. The control device 101 (control unit 102) controls the opening degree of the second flow control valve 58. The actuator of the second flow control valve 58 is, for example, an electric actuator. Hydrogen peroxide solution flows through the second component supply piping 53 at a flow rate corresponding to the opening degree of the second flow control valve 58.

[0059] The control device 101 (control unit 102) opens the first component on / off valve 54 and the second component on / off valve 57 when supplying SPM to the substrate W. As a result, sulfuric acid and hydrogen peroxide are supplied to the first nozzle 51. The sulfuric acid and hydrogen peroxide are then mixed in the first nozzle 51 to generate SPM, which is then continuously discharged downward from the first nozzle 51.

[0060] More specifically, sulfuric acid is supplied from the first component supply pipe 52 to the first nozzle 51 at a flow rate corresponding to the opening degree of the first flow control valve 55. Also, hydrogen peroxide is supplied from the second component supply pipe 53 to the first nozzle 51 at a flow rate corresponding to the opening degree of the second flow control valve 58. Therefore, the mixing ratio of sulfuric acid and hydrogen peroxide corresponds to the opening degrees of the first flow control valve 55 and the second flow control valve 58. Thus, the mixing ratio of sulfuric acid and hydrogen peroxide can be adjusted by adjusting the opening degrees of the first flow control valve 55 and the second flow control valve 58.

[0061] The temperature of the SPM corresponds to the mixing ratio of sulfuric acid and hydrogen peroxide solution, the temperature of the sulfuric acid before mixing, and the temperature of the hydrogen peroxide solution before mixing. The temperature of the hydrogen peroxide solution before mixing is, for example, about the same as room temperature. By adjusting the heating temperature of the sulfuric acid by the heater 56, the temperature of the SPM can be raised to 100°C or higher. The temperature of the hydrogen peroxide solution before mixing may be higher than room temperature. For example, a heater may be installed in the second component supply pipe 53 to raise the temperature of the hydrogen peroxide solution above room temperature.

[0062] When supplying hydrogen peroxide solution to the substrate W, the control device 101 (control unit 102) closes the first component on / off valve 54 and opens the second component on / off valve 57. As a result, hydrogen peroxide solution is supplied to the first nozzle 51, and the hydrogen peroxide solution is continuously discharged downward from the first nozzle 51.

[0063] Next, the first nozzle moving mechanism 6 will be described. The first nozzle moving mechanism 6 moves the first nozzle 51 along a horizontal plane. The operation of the first nozzle moving mechanism 6 is controlled by the control device 101 (control unit 102). More specifically, the first nozzle moving mechanism 6 moves the first nozzle 51 between a retraction area and a processing position. The retraction area is the area outside the substrate holding section 3. For example, the retraction area may be the area outside the liquid receiving section 11. In this embodiment, the processing position of the first nozzle 51 is a position opposite the center of the substrate W. The first nozzle 51 supplies SPM and hydrogen peroxide solution to the substrate W from the processing position.

[0064] As shown in Figure 2, the first nozzle moving mechanism 6 may include a first nozzle arm 61, a first nozzle base 62, and a first nozzle moving part 63. The first nozzle base 62 extends vertically. The base end of the first nozzle arm 61 is connected to the first nozzle base 62. The first nozzle arm 61 extends horizontally from the first nozzle base 62.

[0065] The first nozzle arm 61 supports the first nozzle 51. The first nozzle 51 protrudes vertically downward from the first nozzle arm 61. The first nozzle 51 may be positioned at the tip of the first nozzle arm 61.

[0066] The first nozzle moving unit 63 rotates the first nozzle base 62 about the second rotation axis AX2 which extends vertically. As a result, the first nozzle 51 moves around the first nozzle base 62 along the circumferential direction centered on the second rotation axis AX2.

[0067] More specifically, the second rotation axis AX2 passes through the center of the first nozzle base 62. Therefore, the first nozzle moving unit 63 rotates the first nozzle base 62 with its center as the rotation center. As a result, the first nozzle arm 61 pivots with the center of the first nozzle base 62 as the rotation center, and the first nozzle 51 moves along the circumferential direction with the center of the first nozzle base 62 as the center. The first nozzle moving unit 63 is controlled by a control device 101 (control unit 102). The first nozzle moving unit 63 includes, for example, a stepping motor. Alternatively, the first nozzle moving unit 63 may include a motor and a reduction gear.

[0068] Next, the second chemical solution supply unit 7 will be described. The second chemical solution supply unit 7 supplies the second chemical solution to the substrate W held by the substrate holding unit 3. More specifically, the second chemical solution supply unit 7 supplies the second chemical solution to the rotating substrate W. In this embodiment, the second chemical solution supply unit 7 supplies SC1 to the substrate W.

[0069] More specifically, as shown in Figure 2, the second chemical supply unit 7 includes a second nozzle 71, a second chemical supply pipe 72, and a second chemical on-off valve 73. The processing chamber 2 houses the second nozzle 71 and a portion of the second chemical supply pipe 72. In this embodiment, the second chemical on-off valve 73 is located outside the processing chamber 2. Specifically, the second chemical on-off valve 73 is housed in the fluid box 100B described with reference to Figure 1.

[0070] The second nozzle 71 discharges the second chemical solution (SC1) from above the rotating substrate W toward the upper surface of the substrate W. As a result, the second chemical solution (SC1) is supplied to the substrate W, and a liquid film of the second chemical solution (SC1) is formed on the upper surface of the substrate W.

[0071] The second chemical supply pipe 72 is a tubular component, and one end of the second chemical supply pipe 72 is connected to the second nozzle 71. The second chemical supply pipe 72 supplies the second chemical solution (SC1) to the second nozzle 71.

[0072] The second chemical solution shut-off valve 73 is interposed in the second chemical solution supply piping 72. The second chemical solution shut-off valve 73 controls the supply of the second chemical solution (SC1) to the second nozzle 71 and the stopping of the supply of the second chemical solution (SC1) to the second nozzle 71.

[0073] Specifically, the second chemical solution valve 73 is switchable between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the second chemical solution valve 73. The actuator for the second chemical solution valve 73 is, for example, a pneumatic actuator or an electric actuator. When the second chemical solution valve 73 is in the open state, the second chemical solution (SC1) flows through the second chemical solution supply pipe 72 to the second nozzle 71. On the other hand, when the second chemical solution valve 73 is in the closed state, the flow of the second chemical solution (SC1) through the second chemical solution supply pipe 72 stops.

[0074] The control device 101 (control unit 102) opens the second chemical solution on / off valve 73 when supplying the second chemical solution (SC1) to the substrate W. As a result, the second chemical solution (SC1) is supplied to the second nozzle 71. The second chemical solution (SC1) is then continuously discharged downward from the second nozzle 71. The temperature of the second chemical solution (SC1) is, for example, about the same as room temperature.

[0075] Next, the rinse liquid supply unit 9 will be described. The rinse liquid supply unit 9 supplies rinse liquid to the substrate W held by the substrate holding unit 3. More specifically, the rinse liquid supply unit 9 supplies rinse liquid to the rotating substrate W. In this embodiment, the rinse liquid supply unit 9 supplies deionized water to the substrate W.

[0076] More specifically, as shown in Figure 2, the rinse liquid supply unit 9 includes a third nozzle 91, a rinse liquid supply pipe 92, and a rinse liquid on / off valve 93. The processing chamber 2 houses the third nozzle 91 and a portion of the rinse liquid supply pipe 92. In this embodiment, the rinse liquid on / off valve 93 is located outside the processing chamber 2. Specifically, the rinse liquid on / off valve 93 is housed in the fluid box 100B described with reference to Figure 1.

[0077] The third nozzle 91 is a fixed nozzle that discharges rinsing liquid (deionized water) from a fixed position toward the upper surface of the rotating substrate W held by the substrate holding part 3. As a result, the rinsing liquid is supplied to the substrate W, and a liquid film of rinsing liquid (deionized water) is formed on the upper surface of the substrate W.

[0078] The rinse liquid supply pipe 92 is a tubular component, and one end of the rinse liquid supply pipe 92 is connected to the third nozzle 91. The rinse liquid supply pipe 92 supplies rinse liquid (deionized water) to the third nozzle 91.

[0079] The rinse liquid shut-off valve 93 is installed in the rinse liquid supply piping 92. The rinse liquid shut-off valve 93 controls the supply of rinse liquid (deionized water) to the third nozzle 91 and the stopping of the supply of rinse liquid (deionized water) to the third nozzle 91.

[0080] Specifically, the rinse liquid on / off valve 93 is switchable between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the rinse liquid on / off valve 93. The actuator for the rinse liquid on / off valve 93 is, for example, a pneumatic actuator or an electric actuator. When the rinse liquid on / off valve 93 is in the open state, the rinse liquid (deionized water) flows through the rinse liquid supply pipe 92 to the third nozzle 91. On the other hand, when the rinse liquid on / off valve 93 is in the closed state, the flow of rinse liquid (deionized water) through the rinse liquid supply pipe 92 stops.

[0081] The control device 101 (control unit 102) opens the rinse liquid on / off valve 93 when supplying rinse liquid (deionized water) to the substrate W. As a result, rinse liquid (deionized water) is supplied to the third nozzle 91. Then, the rinse liquid (deionized water) is discharged from the third nozzle 91 toward the center of the upper surface of the substrate W.

[0082] Next, the liquid receiving section 11 will be described. The liquid receiving section 11 surrounds the substrate W held by the substrate holding section 3 and receives the waste liquid RL, which is the processing liquid discharged from the substrate W. More specifically, the liquid receiving section 11 has a guard section 111 and a cup section 112.

[0083] The guard portion 111 is roughly cylindrical and surrounds the substrate W held by the substrate holding portion 3. The guard portion 111 receives the processing liquid (drainage liquid RL) discharged from the substrate W. More specifically, the guard portion 111 receives the processing liquid (drainage liquid RL) that splashes from the rotating substrate W.

[0084] The cup portion 112 is connected to the lower end of the guard portion 111. The cup portion 112 is annular in shape, forming an annular liquid receiving groove with an open top. The drained liquid RL received by the guard portion 111 flows down to the cup portion 112 due to its own weight. In addition, the drained liquid RL that collides with the guard portion 111 and bounces back falls into the cup portion 112 due to its own weight. As a result, the drained liquid RL is collected inside the cup portion 112 (liquid receiving groove).

[0085] Next, the substrate processing apparatus 100 will be further described with reference to Figure 2. As shown in Figure 2, the substrate processing apparatus 100 further comprises a first drainage pipe 12, a switching unit 13, a plurality of second drainage pipes 14, and first ports P1 to fourth ports P4.

[0086] The first drain pipe 12 is a tubular member that extends from the inside to the outside of the processing chamber 2. One end 12a of the first drain pipe 12 is connected to the liquid receiving section 11. Specifically, one end 12a of the first drain pipe 12 is connected to the bottom of the cup section 112 (the bottom of the liquid receiving groove). More specifically, a discharge hole is provided at the bottom of the cup section 112 (the bottom of the liquid receiving groove). The first drain pipe 12 is connected to the bottom of the cup section 112 (the bottom of the liquid receiving groove) so as to communicate with the discharge hole. As a result, the drained liquid RL collected inside the cup section 112 (liquid receiving groove) flows into the first drain pipe 12 by its own weight.

[0087] The switching unit 13 and the multiple second drain pipes 14 are located outside the processing unit 1. The switching unit 13 switches the destination of the drain RL flowing through the first drain pipe 12 among the multiple second drain pipes 14. Specifically, the switching unit 13 is controlled by the control device 101 (control unit 102). The control device 101 (control unit 102) controls the switching unit 13 to switch the destination of the drain RL flowing through the first drain pipe 12 among the multiple second drain pipes 14. Hereinafter, the destination of the drain RL flowing through the first drain pipe 12 may be referred to as the "destination of the drain RL".

[0088] In this embodiment, the multiple second drainage pipes 14 include first pipes 141 to fourth pipes 144, and the switching unit 13 switches the destination of the drainage RL between the first pipes 141 to fourth pipes 144.

[0089] More specifically, the switching unit 13 includes a switching valve 131. The switching valve 131 includes first switching valves 131a to fourth switching valves 131d. The first switching valves 131a to fourth switching valves 131d are arranged in a straight line in this order. That is, the first switching valve 131a and the second switching valve 131b are adjacent, the second switching valve 131b and the third switching valve 131c are adjacent, and the third switching valve 131c and the fourth switching valve 131d are adjacent. Therefore, the first switching valve 131a and the second switching valve 131b are connected. Similarly, the second switching valve 131b and the third switching valve 131c are connected, and the third switching valve 131c and the fourth switching valve 131d are connected. In this embodiment, the switching valve 131 extends in a straight line in a substantially horizontal position.

[0090] The other end 12b of the first drain pipe 12 is connected to the first switching valve 131a. More specifically, in this embodiment, the first drain pipe 12 includes a horizontal section 121 extending horizontally, and one end of the horizontal section 121 is connected to the first switching valve 131a. One end of the first pipe 141 is further connected to the first switching valve 131a. The other end of the first pipe 141 is connected to the first port P1. The drain RL flowing through the first drain pipe 12 flows substantially horizontally in the horizontal section 121. Therefore, the drain RL is difficult to flow in the horizontal section 121.

[0091] One end of the third pipe 143 is connected to the second switching valve 131b. The other end of the third pipe 143 is connected to the third port P3. One end of the second pipe 142 is connected to the third switching valve 131c. The other end of the second pipe 142 is connected to the second port P2. One end of the fourth pipe 144 is connected to the fourth switching valve 131d. The other end of the fourth pipe 144 is connected to the fourth port P4.

[0092] The control device 101 (control unit 102) controls the first switching valve 131a to the fourth switching valve 131d to switch the destination of the drain RL between the first pipe 141 and the fourth pipe 144. In other words, the control device 101 (control unit 102) switches the destination of the drain RL between the first port P1 and the fourth port P4. For example, if the first pipe 141 (first port P1) is selected as the destination of the drain RL, the drain RL flows into the first pipe 141 via the switching valve 131 and is guided to the first port P1 by the first pipe 141.

[0093] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figure 3. Figure 3 is a diagram showing the surrounding configuration of the switching unit 13 included in the substrate processing apparatus 100 of this embodiment.

[0094] As shown in Figure 3, the first drainage line GL1 is connected to the first port P1. The first drainage line GL1 is installed in the factory where the substrate processing equipment 100 is located. The first drainage line GL1 is a line for recovering sulfuric acid (SPM) discharged from the substrate processing equipment 100. Sulfuric acid is a chemical that needs to be treated for disposal, and the recovery treatment of used sulfuric acid requires a large amount of industrial water and a large amount of electricity. Therefore, if the amount of wastewater RL flowing into the first drainage line GL1 increases, the burden on the factory increases.

[0095] As shown in Figure 3, when the control device 101 (control unit 102) selects the first pipe 141 (first port P1) as the destination for the drain RL, the drain RL flows into the first pipe 141 via the switching valve 131, and then flows from the first pipe 141 to the first drain line GL1 via the first port P1.

[0096] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 3 and 4. Figure 4 is another diagram showing the configuration around the switching unit 13 included in the substrate processing apparatus 100 of this embodiment.

[0097] As shown in Figures 3 and 4, the second port P2 is connected to the first pipe 141. Therefore, as shown in Figure 4, when the control device 101 (control unit 102) selects the second pipe 142 (second port P2) as the destination for the drain RL, the drain RL flows into the second pipe 142 via the switching valve 131, and then flows from the second pipe 142 to the first pipe 141 via the second port P2. As a result, the drain RL flows from the first pipe 141 to the first drain line GL1 via the first port P1.

[0098] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 3 to 5. Figure 5 is another diagram showing the surrounding configuration of the switching unit 13 included in the substrate processing apparatus 100 of this embodiment.

[0099] As shown in Figures 3 to 5, the second drainage line GL2 is connected to the third port P3. The second drainage line GL2 is laid in the factory where the substrate processing equipment 100 is installed. The second drainage line GL2 is a line for recovering SC1 discharged from the substrate processing equipment 100.

[0100] As shown in Figure 5, when the control device 101 (control unit 102) selects the third pipe 143 (third port P3) as the destination for the drain RL, the drain RL flows into the third pipe 143 via the switching valve 131, and then flows from the third pipe 143 to the second drain line GL2 via the third port P3.

[0101] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 3 to 6. Figure 6 is another diagram showing the surrounding configuration of the switching unit 13 included in the substrate processing apparatus 100 of this embodiment.

[0102] As shown in Figures 3 to 6, the substrate processing apparatus 100 further comprises a fifth pipe 145 and a drainage tank 21. The fifth pipe 145 is a tubular member. One end of the fifth pipe 145 is connected to the fourth port P4. The other end of the fifth pipe 145 is connected to the drainage tank 21. The fifth pipe 145 connects the fourth port P4 and the drainage tank 21.

[0103] As shown in Figure 6, when the control device 101 (control unit 102) selects the fourth pipe 144 (fourth port P4) as the destination for the drained liquid RL, the drained liquid RL flows into the fourth pipe 144 via the switching valve 131, and then flows from the fourth pipe 144 to the fifth pipe 145 via the fourth port P4. As a result, the drained liquid RL is collected in the drained liquid tank 21.

[0104] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 7. Figure 7 is a flowchart showing the operation of the substrate processing apparatus 100 of this embodiment. More specifically, Figure 7 shows the processing sequence when performing substrate processing.

[0105] As shown in Figure 7, when performing substrate processing, the central robot CR loads the substrate W into the processing chamber 2 of one of the multiple processing units 1 (step S1). The substrate W loaded into the processing chamber 2 is held horizontally by the substrate holding unit 3.

[0106] When the substrate holder 3 holds the substrate W, the control unit 102 drives the substrate rotating unit 4. As a result, the substrate W starts to rotate (step S2). Specifically, the control unit 102 drives the motor body 41.

[0107] When the rotational speed of the motor body 41 (the rotational speed of the substrate W) reaches a predetermined speed, the processing unit 1 performs the first chemical treatment and supplies the first chemical solution (SPM) to the substrate W (step S3).

[0108] Specifically, when the rotational speed of the motor body 41 (the rotational speed of the substrate W) reaches a predetermined speed, the control unit 102 first controls the first nozzle movement mechanism 6 to move the first nozzle 51 from the retracted position to the processing position. Then, the control unit 102 opens the first component on-off valve 54 and the second component on-off valve 57. As a result, the first chemical solution (SPM) is discharged from the first nozzle 51 toward the substrate W, and a liquid film of the first chemical solution (SPM) is formed on the upper surface of the substrate W. At this time, the first chemical solution (SPM) scattered from the substrate W is collected in the cup section 112 and flows into the first drain pipe 12.

[0109] In this embodiment, after a predetermined time (X1 seconds) has elapsed since the start of supplying the first chemical solution, the processing unit 1 supplies one component of the first chemical solution (hydrogen peroxide) to the substrate W. Specifically, the control unit 102 transitions the first component on / off valve 54 from the open state to the closed state and maintains the second component on / off valve 57 in the open state. As a result, one component of the first chemical solution (hydrogen peroxide) is discharged from the first nozzle 51 toward the substrate W, and a liquid film of one component of the first chemical solution (hydrogen peroxide) is formed on the upper surface of the substrate W.

[0110] More specifically, the liquid film on the upper surface of the substrate W is replaced from a liquid film of the first chemical solution (SPM) to a liquid film of one component of the first chemical solution (hydrogen peroxide). At this time, the first chemical solution (SPM) and one component of the first chemical solution (hydrogen peroxide) scattered from the substrate W are collected in the cup portion 112 and flow into the first drainage pipe 12.

[0111] After a predetermined time (X2 seconds) has elapsed since the start of supplying one component of the first chemical solution (hydrogen peroxide), the processing unit 1 performs the first rinsing process and supplies rinsing solution (deionized water) to the substrate W (step S4).

[0112] Specifically, the control unit 102 transitions the second component on / off valve 57 from the open state to the closed state, stopping the supply of one component of the first chemical solution (hydrogen peroxide). Then, the control unit 102 controls the first nozzle moving mechanism 6 to move the first nozzle 51 from the processing position to the retracted position. Alternatively, the control unit 102 may move the first nozzle 51 from the processing position to the retracted position before stopping the supply of one component of the first chemical solution (hydrogen peroxide). After stopping the supply of one component of the first chemical solution (hydrogen peroxide), the control unit 102 transitions the rinse liquid on / off valve 93 from the closed state to the open state. As a result, rinse liquid (deionized water) is discharged from the third nozzle 91 toward the substrate W, and a liquid film of rinse liquid (deionized water) is formed on the upper surface of the substrate W.

[0113] More specifically, the liquid film on the upper surface of the substrate W is replaced from a liquid film of one component of the first chemical solution (hydrogen peroxide) to a liquid film of the rinsing solution (deionized water). At this time, the component of the first chemical solution (hydrogen peroxide) and the rinsing solution (deionized water) scattered from the substrate W are collected in the cup section 112 and flow into the first drainage pipe 12.

[0114] After a predetermined time (X3 seconds) has elapsed since the start of supplying the rinsing solution (deionized water), the processing unit 1 performs the second chemical treatment and supplies the second chemical solution (SC1) to the substrate W (step S5).

[0115] Specifically, the control unit 102 transitions the rinse liquid on / off valve 93 from the open state to the closed state, stopping the supply of rinse liquid (deionized water). Then, the control unit 102 controls the second nozzle moving mechanism 8 to move the second nozzle 71 from the retracted position to the processing position. After that, the control unit 102 opens the second chemical solution on / off valve 73. As a result, the second chemical solution (SC1) is discharged from the second nozzle 71 toward the substrate W, and a liquid film of the second chemical solution (SC1) is formed on the upper surface of the substrate W.

[0116] More specifically, the liquid film on the upper surface of the substrate W is replaced from a liquid film of rinsing solution (deionized water) to a liquid film of the second chemical solution (SC1). At this time, the rinsing solution (deionized water) and the second chemical solution (SC1) scattered from the substrate W are collected in the cup section 112 and flow into the first drainage pipe 12.

[0117] After a predetermined time (X4 seconds) has elapsed since the start of supplying the second chemical solution (SC1), the processing unit 1 performs a second rinsing process and supplies rinsing solution (deionized water) to the substrate W (step S6).

[0118] Specifically, the control unit 102 transitions the second chemical solution on / off valve 73 from the open state to the closed state, stopping the supply of the second chemical solution (SC1). Then, the control unit 102 controls the second nozzle moving mechanism 8 to move the second nozzle 71 from the processing position to the retracted position. Alternatively, the control unit 102 may move the second nozzle 71 from the processing position to the retracted position before stopping the supply of the second chemical solution (SC1). After stopping the supply of the second chemical solution (SC1), the control unit 102 transitions the rinse solution on / off valve 93 from the closed state to the open state. As a result, rinse solution (deionized water) is discharged from the third nozzle 91 toward the substrate W, and a liquid film of rinse solution (deionized water) is formed on the upper surface of the substrate W.

[0119] More specifically, the liquid film on the upper surface of the substrate W is replaced from a liquid film of the second chemical solution (SC1) to a liquid film of the rinsing solution (deionized water). At this time, the second chemical solution (SC1) and the rinsing solution (deionized water) scattered from the substrate W are collected in the cup section 112 and flow into the first drainage pipe 12.

[0120] After a predetermined time (X5 seconds) has elapsed since the start of the supply of rinsing liquid (deionized water), the processing unit 1 performs a drying process to dry the substrate W (step S7). Specifically, the rotation speed of the substrate W is increased. As a result, a large centrifugal force is applied to the rinsing liquid on the substrate W, and the rinsing liquid adhering to the substrate W is shaken off to the periphery of the substrate W. In this way, the rinsing liquid is removed from the substrate W and the substrate W is dried. At this time, the rinsing liquid (deionized water) scattered from the substrate W is collected in the cup section 112 and flows into the first drain pipe 12.

[0121] After a predetermined time (X6 seconds) has elapsed since the high-speed rotation of the substrate W began, the control unit 102 stops the rotation of the substrate W by stopping the drive of the motor body 41 (step S8). As a result, the drying process is completed.

[0122] Once the drying process is complete, the substrate holding unit 3 releases the substrate W, and the center robot CR transports the substrate W out of the processing chamber 2 (step S9), thus ending the operation shown in Figure 7.

[0123] Next, the first chemical treatment (step S3 in Figure 7), the first rinsing treatment (step S4 in Figure 7), and the second chemical treatment (step S5 in Figure 7) will be described with reference to Figures 1 to 9. Figure 8(a) is a diagram showing a first example of the timing of switching the flow destination of the drained liquid RL by the control unit 102 included in the substrate processing apparatus 100 of this embodiment. Figure 8(b) is a diagram showing a comparative example of the timing of switching the flow destination of the drained liquid RL.

[0124] As shown in Figure 8(a), the control unit 102 selects the first port P1 (first pipe 141) as the destination for the drain RL during the execution of the first chemical treatment. As a result, as explained with reference to Figure 3, SPM (first chemical) and hydrogen peroxide (a component of the first chemical) flow into the first drain line GL1 via the first port P1. In other words, each component of the first chemical (sulfuric acid and hydrogen peroxide) flows into the first drain line GL1.

[0125] In the example shown in Figure 8(a), even after the completion of the first chemical treatment, the drain RL continues to flow to the first port P1 (first pipe 141). As a result, as explained with reference to Figure 3, the rinse solution (deionized water) and the sulfuric acid washed away by the rinse solution (deionized water) flow into the first drain line GL1.

[0126] In detail, sulfuric acid is a highly viscous chemical solution and therefore does not flow easily. As a result, at the end of the first chemical treatment, sulfuric acid remains in the first drainage pipe 12 and inside the switching valve 131. In particular, in this embodiment, sulfuric acid tends to accumulate in the horizontal section 121 of the first drainage pipe 12. Also, in this embodiment, since the switching valve 131 extends in a straight line in a nearly horizontal position, sulfuric acid tends to accumulate inside the switching valve 131. Therefore, when the first rinsing treatment is performed, the accumulated sulfuric acid is washed away by the rinsing solution and flows into the first drainage line GL1.

[0127] In the example shown in Figure 8(a), the control unit 102 switches the destination of the drain RL from the first port P1 (first pipe 141) to the second port P2 (second pipe 142) during the execution of the first rinse process. Specifically, the control unit 102 switches the destination of the drain RL from the first port P1 (first pipe 141) to the second port P2 (second pipe 142) after a predetermined time (Y1 second) has elapsed since the start of the first rinse process. As a result, as explained with reference to Figure 4, the rinse liquid (deionized water) and the sulfuric acid washed away by the rinse liquid (deionized water) flow into the first drain line GL1.

[0128] As shown in Figure 8(a), after the first rinse treatment is performed, the control unit 102 switches the destination of the drained liquid RL from the second port P2 (second pipe 142) to the third port P3 (third pipe 143). In the example shown in Figure 8(a), the control unit 102 switches the destination of the drained liquid RL from the second port P2 to the third port P3 at a time delayed from the end of the first rinse treatment. In other words, the control unit 102 switches the destination of the drained liquid RL from the second port P2 to the third port P3 at a time delayed from the start of the second chemical treatment. Specifically, the control unit 102 switches the destination of the drained liquid RL from the second port P2 to the third port P3 after a predetermined time (Y2 seconds) has elapsed since the first port P1 to the second port P2.

[0129] In the following explanation, the delay time from the completion of the first chemical treatment until the destination of the drain RL is switched from a port other than the third port P3 (third pipe 143) (pipe other than the third pipe 143) to the third port P3 (third pipe 143) may be referred to as the "switching delay time". In the example shown in Figure 8(a), the switching delay time is "Y1 second + Y2 seconds".

[0130] As shown in Figure 8(a), the drain RL during the second chemical treatment process flows to the third port P3 (third pipe 143). Therefore, as explained with reference to Figure 5, the second chemical (SC1) flows into the second drain line GL2 via the third port P3.

[0131] Furthermore, after the completion of the second chemical treatment, the control unit 102 switches the destination of the drained liquid RL from the third port P3 (third pipe 143) to the fourth port P4 (fourth pipe 144). More specifically, the control unit 102 selects the fourth port P4 (fourth pipe 144) as the destination of the drained liquid RL after the second rinse treatment (step S6 in Figure 7). As a result, as explained with reference to Figure 6, the rinse solution (deionized water) and the components of SC1 (ammonium hydroxide, hydrogen peroxide, and water) washed away by the rinse solution (deionized water) are guided to the drain tank 21 via the fourth port P4 and stored in the drain tank 21.

[0132] Next, a comparative example will be explained with reference to Figure 8(b). In the comparative example shown in Figure 8(b), the destination of the drain RL switches from the first port P1 to the third port P3 at a predetermined time (Z seconds) after the completion of the first chemical treatment. In other words, in the comparative example shown in Figure 8(b), the rinse solution (deionized water) and the sulfuric acid washed away by the rinse solution (deionized water) flow into the first drain line GL1 only through the first pipe 141.

[0133] As described above, sulfuric acid is a highly viscous chemical solution and difficult to flow. Therefore, in a configuration where sulfuric acid only flows through the first pipe 141, due to the retention of sulfuric acid occurring in the first pipe 141, it becomes even more difficult for sulfuric acid to flow. Therefore, in order to allow sulfuric acid to flow more sufficiently into the first drain line GL1, it is necessary to sufficiently delay the timing of switching the flow destination of the drain RL from the first port P1 to the third port P3 from the end timing of the first chemical solution treatment. That is, it is necessary to make the switching delay time sufficiently long. In the comparative example, the switching delay time is, for example, 13 seconds.

[0134] In contrast, according to the present embodiment, sulfuric acid can be dispersed and flowed through the first pipe 141 and the second pipe 142. Therefore, compared with a configuration (comparative example) where sulfuric acid only flows through the first pipe 141, the switching delay time can be shortened (Y1 + Y2 < Z). Thus, the amount of the drain flowing into the first drain line GL1 can be reduced compared to the comparative example.

[0135] Also, as described above, the first drain line GL1 is a line for recovering sulfuric acid, and a large amount of industrial water and a large amount of electric power are required for the recovery treatment of the used sulfuric acid. Therefore, when the amount of the drain flowing into the first drain line GL1 increases, the burden on the factory side increases. According to the present embodiment, the amount of the drain flowing into the first drain line GL1 can be reduced to reduce the burden on the factory side.

[0136] Subsequently, referring to FIGS. 9(a) to 9(c), the first chemical solution treatment (step S3 in FIG. 7), the first rinse treatment (step S4 in FIG. 7), and the second chemical solution treatment (step S5 in FIG. 7) will be described. FIG. 9(a) is a diagram showing a second example of the switching timing of the flow destination of the drain RL by the control unit 102 included in the substrate processing apparatus 100 of the present embodiment. FIG. 9(b) is a diagram showing a third example of the switching timing of the flow destination of the drain RL by the control unit 102 included in the substrate processing apparatus 100 of the present embodiment. FIG. 9(c) is a diagram showing a fourth example of the switching timing of the flow destination of the drain RL by the control unit 102 included in the substrate processing apparatus 100 of the present embodiment.

[0137] As shown in Figure 9(a), the control unit 102 may switch the destination of the drained liquid RL from the second port P2 to the third port P3 when the first rinsing process is completed. Also, as shown in Figures 9(b) and 9(c), the control unit 102 may switch the destination of the drained liquid RL from the first port P1 to the second port P2 when the first chemical treatment is completed.

[0138] Next, an example of the configuration of the switching valve 131 will be described with reference to Figure 10. Figure 10 is a diagram showing an example of the configuration of the switching valve 131 included in the substrate processing apparatus 100 of this embodiment.

[0139] As shown in Figure 10, the switching valve 131 may have a first valve body 133a to a fourth valve body 133d, a common flow path MR, and a first branch flow path BR1 to a fourth branch flow path BR4. The first valve body 133a and the first branch flow path BR1 are included in the first switching valve 131a. The second valve body 133b and the second branch flow path BR2 are included in the second switching valve 131b. The third valve body 133c and the third branch flow path BR3 are included in the third switching valve 131c. The fourth valve body 133d and the fourth branch flow path BR4 are included in the fourth switching valve 131d.

[0140] The common channel MR extends in a straight line in a nearly horizontal position. One end of the common channel MR is open, and the other end is closed. The first drain pipe 12 is connected to one end of the common channel MR, and the channel R1 of the first drain pipe 12 communicates with the common channel MR.

[0141] The first branch channel BR1 to the fourth branch channel BR4 are each channels that branch off from the common channel MR and are in communication with the common channel MR. The first branch channel BR1 to the fourth branch channel BR4 each extend in a direction intersecting the direction in which the common channel MR extends.

[0142] One end of the first branch channel BR1 is connected to the common channel MR. The first pipe 141 is connected to the other end of the first branch channel BR1, and the channel R2a of the first pipe 141 is in communication with the first branch channel BR1.

[0143] One end of the second branch channel BR2 is connected to the common channel MR. The third pipe 143 is connected to the other end of the second branch channel BR2, and the channel R2c of the third pipe 143 communicates with the second branch channel BR2.

[0144] One end of the third branch channel BR3 is connected to the common channel MR. The second pipe 142 is connected to the other end of the third branch channel BR3, and the channel R2b of the second pipe 142 is in communication with the third branch channel BR3.

[0145] One end of the fourth branch channel BR4 is connected to the common channel MR. The fourth pipe 144 is connected to the other end of the fourth branch channel BR4, and the channel R2d of the fourth pipe 144 communicates with the fourth branch channel BR4.

[0146] The first valve body 133a is movable between a closed position and an open position. The closed position of the first valve body 133a indicates the position where the first valve body 133a closes one end of the first branch channel BR1. The open position of the first valve body 133a indicates the position where the first valve body 133a opens one end of the first branch channel BR1, connecting the first branch channel BR1 and the common channel MR.

[0147] When the first valve body 133a moves from the open position to the closed position, one end of the first branch channel BR1 is closed, and the first branch channel BR1 and the common channel MR are no longer in communication. Therefore, the first branch channel BR1 and the channel R1 of the first drainage pipe 12 are no longer in communication. On the other hand, when the first valve body 133a moves from the closed position to the open position, one end of the first branch channel BR1 is opened, and the first branch channel BR1 and the common channel MR are connected. In other words, the first branch channel BR1 and the channel R1 of the first drainage pipe 12 are connected.

[0148] The second valve body 133b, like the first valve body 133a, is movable between a closed position and an open position. The closed position of the second valve body 133b indicates the position where the second valve body 133b closes one end of the second branch channel BR2. The open position of the second valve body 133b indicates the position where the second valve body 133b opens one end of the second branch channel BR2, connecting the second branch channel BR2 and the common channel MR.

[0149] When the second valve body 133b moves from the open position to the closed position, one end of the second branch channel BR2 is closed, and the second branch channel BR2 and the common channel MR are no longer in communication. Therefore, the second branch channel BR2 and the channel R1 of the first drainage pipe 12 are no longer in communication. On the other hand, when the second valve body 133b moves from the closed position to the open position, one end of the second branch channel BR2 is opened, and the second branch channel BR2 and the common channel MR are connected. In other words, the second branch channel BR2 and the channel R1 of the first drainage pipe 12 are connected.

[0150] The third valve body 133c, like the first valve body 133a and the second valve body 133b, is movable between a closed position and an open position. The closed position of the third valve body 133c indicates the position where the third valve body 133c closes one end of the third branch channel BR3. The open position of the third valve body 133c indicates the position where the third valve body 133c opens one end of the third branch channel BR3, connecting the third branch channel BR3 and the common channel MR.

[0151] When the third valve body 133c moves from the open position to the closed position, one end of the third branch channel BR3 is closed, and the third branch channel BR3 and the common channel MR are no longer in communication. Therefore, the third branch channel BR3 and the channel R1 of the first drain pipe 12 are no longer in communication. On the other hand, when the third valve body 133c moves from the closed position to the open position, one end of the third branch channel BR3 is opened, and the third branch channel BR3 and the common channel MR are connected. In other words, the third branch channel BR3 and the channel R1 of the first drain pipe 12 are connected.

[0152] The fourth valve body 133d, like the first valve bodies 133a to the third valve bodies 133c, is movable between a closed position and an open position. The closed position of the fourth valve body 133d indicates the position where the fourth valve body 133d closes one end of the fourth branch channel BR4. The open position of the fourth valve body 133d indicates the position where the fourth valve body 133d opens one end of the fourth branch channel BR4, connecting the fourth branch channel BR4 with the common channel MR.

[0153] When the fourth valve body 133d moves from the open position to the closed position, one end of the fourth branch channel BR4 is closed, and the fourth branch channel BR4 and the common channel MR are no longer in communication. Therefore, the fourth branch channel BR4 and the channel R1 of the first drain pipe 12 are no longer in communication. On the other hand, when the fourth valve body 133d moves from the closed position to the open position, one end of the fourth branch channel BR4 is opened, and the fourth branch channel BR4 and the common channel MR are connected. In other words, the fourth branch channel BR4 and the channel R1 of the first drain pipe 12 are connected.

[0154] Figure 10 illustrates a switching valve 131 in which the first valve body 133a is in the open position and the second valve bodies 133b to the fourth valve bodies 133d are in the closed position. In this case, the first piping 141 is the destination for the drainage RL flowing through the first drainage piping 12.

[0155] In the example shown in Figure 10, among the connection points CP2a between the first pipe 141 and the switching valve 131, CP2c between the third pipe 143 and the switching valve 131, CP2b between the second pipe 142 and the switching valve 131, and CP2d between the fourth pipe 144 and the switching valve 131, the connection point CP2a between the first pipe 141 and the switching valve 131 is closest to the connection point CP1 between the switching valve 131 and the first drain pipe 12. Therefore, some of the SPM that flows into the switching valve 131 during the first chemical treatment does not flow from the common flow path MR to the first branch flow path BR1, but instead flows through the common flow path MR. As a result, sulfuric acid accumulates inside the switching valve 131.

[0156] In the following explanation, the connection point CP2a between the first pipe 141 and the switching valve 131 may be referred to as "first connection point CP2a". Similarly, the connection points CP2c between the third pipe 143 and the switching valve 131, CP2b between the second pipe 142 and the switching valve 131, and CP2d between the fourth pipe 144 and the switching valve 131 may be referred to as "third connection point CP2c", "second connection point CP2b", and "fourth connection point CP2d", respectively.

[0157] According to this embodiment, as shown in Figure 10, even if the structure of the switching valve 131 is such that sulfuric acid tends to accumulate inside the switching valve 131, the sulfuric acid accumulated inside the switching valve 131 can be more sufficiently introduced into the first drain line GL1.

[0158] Furthermore, in the example shown in Figure 10, the second connection point CP2b is further from the connection point CP1 between the switching valve 131 and the first drainage pipe 12 than the first connection point CP2a and the third connection point CP2c. Therefore, the liquid flowing from the first drainage pipe 12 into the common flow path MR is more likely to flow into the second pipe 142 than into the first pipe 141 and the third pipe 143. According to this embodiment, after the first chemical treatment, when the flow destination of the drainage RL is switched from the first pipe 141 to the second pipe 142, and the rinsing solution (deionized water) and the sulfuric acid washed away by the rinsing solution (deionized water) are introduced into the first drainage line GL1 via the second pipe 142, the sulfuric acid washed away by the rinsing solution is more likely to flow into the first drainage line GL1.

[0159] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 11. Figure 11 is a block diagram showing the configuration of the control device 101 and the switching unit 13 included in the substrate processing apparatus 100 of this embodiment.

[0160] As shown in Figure 11, the switching valve 131 further comprises a first valve actuation unit 132a to a fourth valve actuation unit 132d. The first valve actuation unit 132a is included in the first switching valve 131a. Similarly, the second valve actuation units 132b to the fourth valve actuation units 132d are each included in the second switching valve 131b to the fourth switching valve 131d.

[0161] The first valve drive unit 132a is controlled by the control device 101 (control unit 102) to move the first valve body 133a between a closed position and an open position. The first valve drive unit 132a may include, for example, a motor as a power source for the first valve body 133a.

[0162] Similarly, the second valve drive unit 132b is controlled by the control device 101 (control unit 102) to move the second valve body 133b between a closed position and an open position. The third valve drive unit 132c is controlled by the control device 101 (control unit 102) to move the third valve body 133c between a closed position and an open position. The fourth valve drive unit 132d is controlled by the control device 101 (control unit 102) to move the fourth valve body 133d between a closed position and an open position. Each of the second valve drive units 132b to the fourth valve drive units 132d may include a motor as a power source for, for example, the second valve body 133b to the fourth valve body 133d.

[0163] Embodiment 1 of the present invention has been described above with reference to Figures 1 to 11. According to this embodiment, the amount of wastewater that needs to be treated for disposal can be reduced.

[0164] [Embodiment 2] Next, Embodiment 2 of the present invention will be described with reference to Figures 12 to 14. However, only the differences from Embodiment 1 will be described, and the same matters as in Embodiment 1 will be omitted. Embodiment 2 differs from Embodiment 1 in the configuration of the switching unit 13.

[0165] Figure 12 is a diagram showing the surrounding configuration of the switching unit 13 included in the substrate processing apparatus 100 of this embodiment. Figure 13 is another diagram showing the surrounding configuration of the switching unit 13 included in the substrate processing apparatus 100 of this embodiment. Figure 14 is a block diagram showing the configuration of the control device 101 and the switching unit 13 included in the substrate processing apparatus 100 of this embodiment.

[0166] As shown in Figures 12 to 14, the switching unit 13 includes a switching valve 131, a first on-off valve VA1, and a second on-off valve VA2. The switching valve 131 also includes a first switching valve 131a, a second switching valve 131b, and a third switching valve 131c.

[0167] In this embodiment, the switching valve 131 is connected to the first drainage pipe 12, the first pipe 141, the second pipe 142, and the third pipe 143. The fourth pipe 144 branches off from the second pipe 142.

[0168] As shown in Figures 12 and 13, the first on-off valve VA1 is interposed in the second piping 142. More specifically, the first on-off valve VA1 is positioned between the connection point between the second piping 142 and the fourth piping 144 and the second port P2. The second on-off valve VA2 is interposed in the fourth piping 144.

[0169] The first on-off valve VA1 and the second on-off valve VA2 are each switchable between an open state and a closed state. As shown in Figure 14, the control device 101 (control unit 102) controls the opening and closing operations of the first on-off valve VA1 and the second on-off valve VA2. The actuators for the first on-off valve VA1 and the second on-off valve VA2 are, for example, pneumatic actuators or electric actuators.

[0170] When the control device 101 (control unit 102) switches the flow destination of the drainage liquid RL from the first port P1 (first pipe 141) to the second port P2 (second pipe 142), it opens the first on-off valve VA1 and closes the second on-off valve VA2. As a result, as shown in Figure 12, the drainage liquid RL flows into the second pipe 142 via the switching valve 131, and then flows from the second pipe 142 to the first pipe 141 via the second port P2.

[0171] Furthermore, when the control device 101 (control unit 102) switches the flow destination of the drainage liquid RL from the third port P3 to the fourth port P4, it closes the first on-off valve VA1 and opens the second on-off valve VA2. As a result, as shown in Figure 13, the drainage liquid RL flows into the second pipe 142 via the switching valve 131, then flows from the second pipe 142 to the fourth pipe 144, and is collected in the drainage tank 21 via the fourth port P4 and the fifth pipe 145.

[0172] In this embodiment, the connection point CP2b between the second pipe 142 and the switching valve 131 (second connection point CP2b) is further from the connection point CP1 between the switching valve 131 and the first drain pipe 12 than the connection points between the first pipe 141 and the third pipe 143 and the switching valve 131 (first connection point CP2a and third connection point CP2c). More specifically, the second pipe 142 communicates with the common flow path MR at the terminal end of the common flow path MR of the switching valve 131. As a result, liquid flowing from the first drain pipe 12 into the common flow path MR is more likely to flow into the second pipe 142 than into the first pipe 141 and the third pipe 143.

[0173] According to this embodiment, after the first chemical treatment, the flow destination of the drain RL is switched from the first pipe 141 to the second pipe 142, and when the rinsing solution (deionized water) and the sulfuric acid washed away by the rinsing solution (deionized water) are introduced into the first drain line GL1 via the second pipe 142, the sulfuric acid washed away by the rinsing solution is more easily introduced into the first drain line GL1.

[0174] Embodiment 2 of the present invention has been described above with reference to Figures 12 to 14. According to this embodiment, similar to Embodiment 1, the amount of wastewater that needs to be treated for disposal can be reduced. In this embodiment, the second pipe 142 is connected to the switching valve 131 and the fourth pipe 144 branches off from the second pipe 142, but the fourth pipe 144 may be connected to the switching valve 131 and the second pipe 142 may be branched off from the fourth pipe 144.

[0175] Embodiments of the present invention have been described above with reference to the drawings (Figures 1 to 14). However, the present invention is not limited to the embodiments described above, and can be implemented in various forms without departing from its spirit. Furthermore, the multiple components disclosed in the above embodiments can be modified as appropriate. For example, some components from all the components shown in one embodiment may be added to the components of another embodiment, or some components from all the components shown in one embodiment may be deleted from the embodiment.

[0176] The drawings schematically show each component in order to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown may differ from the actual dimensions due to the convenience of drawing creation. Furthermore, the configuration of each component shown in the above embodiments is merely an example and is not particularly limiting, and it goes without saying that various modifications are possible without substantially departing from the effects of the present invention.

[0177] For example, in the embodiment described with reference to Figures 1 to 14, the liquid receiving section 11 includes one guard section 111 and one cup section 112. However, the liquid receiving section 11 may include multiple guard sections 111 and multiple cup sections 112, as long as the first chemical solution, the second chemical solution, and the rinse solution are collected in the same cup section 112.

[0178] Furthermore, in the embodiments described with reference to Figures 1 to 14, the first chemical solution was SPM, but the first chemical solution is not limited to SPM. For example, the first chemical solution may be a highly viscous chemical solution such as phosphoric acid, a mixed acid, or TMAH (tetramethylammonium hydroxide).

[0179] Furthermore, in the embodiment described with reference to Figures 1 to 14, the substrate processing apparatus 100 was a single-wafer type apparatus, but the substrate processing apparatus 100 may also be a batch type apparatus.

[0180] Furthermore, in the embodiments described with reference to Figures 1 to 14, the substrate holding part 3 was a clamping-type chuck, but the substrate holding part 3 is not limited to a clamping-type chuck. For example, the substrate holding part 3 may be a vacuum-type chuck. [Industrial applicability]

[0181] This invention is useful for apparatus used in processing substrates. [Explanation of symbols]

[0182] 1: Processing Unit 12: First drainage pipe 13: Switching Unit 14: Second drainage pipe 100: Substrate processing equipment 102: Control Unit 121:Horizontal part 131: Switching valve 141: First piping 142: Second piping 143: Third pipe 144: Fourth pipe CP1: Connection point CP2a: First connection point CP2b: Second connection point CP2c: Third connection point CP2d: 4th connection point P1: Port 1 P2: Second port P3: Third port P4: Port 4 RL: Drainage VA1: First shut-off valve VA2: Second shut-off valve W: Circuit board

Claims

1. A processing unit that performs substrate processing on a substrate using multiple types of processing solutions, A first drain pipe into which the drain liquid, which is the processing liquid discharged from the aforementioned processing unit, flows, Multiple second drainage pipes, A switching unit that switches the destination of the drainage flowing through the first drainage pipe between the plurality of second drainage pipes, A control unit that controls the switching unit and Equipped with, The aforementioned multiple types of processing solutions include a first chemical solution, a rinsing solution, and a second chemical solution different from the first chemical solution. The substrate treatment includes a first chemical treatment using the first chemical solution, a rinsing treatment using the rinsing solution, and a second chemical treatment using the second chemical solution. The processing unit performs the first chemical treatment, the rinsing treatment, and the second chemical treatment in this order. The plurality of second drainage pipes include a first pipe for the first chemical solution, a second pipe for the first chemical solution, and a third pipe for the second chemical solution. One end of the second pipe is connected to the switching unit, and the other end of the second pipe is connected to the first pipe. The control unit controls the switching unit to set the destination of the drained liquid during the first chemical treatment as the first pipe, to switch the destination of the drained liquid from the first pipe to the second pipe during the rinsing treatment after the first chemical treatment, and to switch the destination of the drained liquid from the second pipe to the third pipe after the rinsing treatment, in a substrate processing apparatus.

2. The aforementioned rinsing treatment is a first rinsing treatment, The substrate treatment further includes a second rinsing treatment using the rinsing solution, The processing unit performs the first chemical treatment, the first rinsing treatment, the second chemical treatment, and the second rinsing treatment in this order. The plurality of second drainage pipes further include a fourth pipe for the rinse liquid, The substrate processing apparatus according to claim 1, wherein the control unit controls the switching unit to set the destination of the drained liquid during the first chemical treatment as the first pipe, to switch the destination of the drained liquid from the first pipe to the second pipe during the first rinsing treatment after the first chemical treatment, to switch the destination of the drained liquid from the second pipe to the third pipe after the first rinsing treatment, and to switch the destination of the drained liquid from the third pipe to the fourth pipe after the second chemical treatment.

3. A processing unit that performs substrate processing on a substrate using multiple types of processing liquids, A first drain pipe into which the drain liquid, which is the processing liquid discharged from the aforementioned processing unit, flows, Multiple second drainage pipes, A switching unit that switches the destination of the drainage flowing through the first drainage pipe between the plurality of second drainage pipes, A control unit that controls the switching unit and Equipped with, The aforementioned multiple types of processing solutions include a first chemical solution, a rinsing solution, and a second chemical solution different from the first chemical solution. The substrate treatment includes a first chemical treatment using the first chemical solution, a first rinsing treatment using the rinsing solution, a second chemical treatment using the second chemical solution, and a second rinsing treatment using the rinsing solution. The processing unit performs the first chemical treatment, the first rinsing treatment, the second chemical treatment, and the second rinsing treatment in this order. The plurality of second drainage pipes include a first pipe for the first chemical solution, a second pipe for the first chemical solution, a third pipe for the second chemical solution, and a fourth pipe for the rinse solution. The US switching unit includes a switching valve. The switching valve is connected to the first drainage pipe, the first pipe, the second pipe, the third pipe and the fourth pipe, Of the connection points between each of the first pipe, second pipe, third pipe, and fourth pipe and the switching valve, the connection point between the first pipe and the switching valve is closest to the connection point between the switching valve and the first drain pipe. A substrate processing apparatus comprising: a control unit that controls the switching valve to direct the flow of the drained liquid to the first pipe during the first chemical treatment; switching the flow of the drained liquid from the first pipe to the second pipe during the first rinsing treatment after the first chemical treatment; switching the flow of the drained liquid from the second pipe to the third pipe after the first rinsing treatment; and switching the flow of the drained liquid from the third pipe to the fourth pipe after the second chemical treatment.

4. The substrate processing apparatus according to claim 3, wherein the connection point between the second pipe and the switching valve is further from the connection point between the switching valve and the first drain pipe than the connection points between the first pipe and the third pipe and the switching valve, respectively.

5. A processing unit that performs substrate processing on a substrate using multiple types of processing liquids, A first drain pipe into which the drain liquid, which is the processing liquid discharged from the aforementioned processing unit, flows, Multiple second drainage pipes, A switching unit that switches the destination of the drainage flowing through the first drainage pipe between the plurality of second drainage pipes, A control unit that controls the switching unit and Equipped with, The aforementioned multiple types of processing solutions include a first chemical solution, a rinsing solution, and a second chemical solution different from the first chemical solution. The substrate treatment includes a first chemical treatment using the first chemical solution, a first rinsing treatment using the rinsing solution, a second chemical treatment using the second chemical solution, and a second rinsing treatment using the rinsing solution. The processing unit performs the first chemical treatment, the first rinsing treatment, the second chemical treatment, and the second rinsing treatment in this order. The plurality of second drainage pipes include a first pipe for the first chemical solution, a second pipe for the first chemical solution, a third pipe for the second chemical solution, and a fourth pipe for the rinse solution. The switching unit includes a switching valve, an on-off valve interposed in the second piping, and an on-off valve interposed in the fourth piping. The switching valve is connected to the first drainage pipe, the first pipe and the third pipe, and also to the second pipe or the fourth pipe. The fourth pipe or the second pipe branches off from the second pipe or the fourth pipe, Of the connection points between the first pipe and the switching valve, the connection point between the third pipe and the switching valve, and the connection points between the second pipe or the fourth pipe and the switching valve, the connection point between the first pipe and the switching valve is closest to the connection point between the switching valve and the first drain pipe. A substrate processing apparatus comprising: a control unit that controls the switching valve to direct the flow of the drained liquid to the first pipe during the first chemical treatment; switching the flow of the drained liquid from the first pipe to the second pipe during the first rinsing treatment after the first chemical treatment; switching the flow of the drained liquid from the second pipe to the third pipe after the first rinsing treatment; and switching the flow of the drained liquid from the third pipe to the fourth pipe after the second chemical treatment.

6. The substrate processing apparatus according to claim 5, wherein the connection point between the second pipe or the fourth pipe and the switching valve is further from the connection point between the switching valve and the first drain pipe than the connection points between the first pipe and the third pipe, respectively, and the switching valve.

7. The substrate processing apparatus according to any one of claims 3 to 6, wherein the switching valve extends in a straight line in a substantially horizontal position.

8. A processing unit that performs substrate processing on a substrate using multiple types of processing liquids, A first drain pipe into which the drain liquid, which is the processing liquid discharged from the aforementioned processing unit, flows, Multiple second drainage pipes, A switching unit that switches the destination of the drainage flowing through the first drainage pipe between the plurality of second drainage pipes, A control unit that controls the switching unit and Equipped with, The aforementioned multiple types of processing solutions include a first chemical solution, a rinsing solution, and a second chemical solution different from the first chemical solution. The substrate treatment includes a first chemical treatment using the first chemical solution, a rinsing treatment using the rinsing solution, and a second chemical treatment using the second chemical solution. The processing unit performs the first chemical treatment, the rinsing treatment, and the second chemical treatment in this order. The plurality of second drainage pipes include a first pipe for the first chemical solution, a second pipe for the first chemical solution, and a third pipe for the second chemical solution. The first drainage pipe includes a horizontal section through which the drainage flows in a substantially horizontal direction. The control unit controls the switching unit to set the destination of the drained liquid during the first chemical treatment as the first pipe, to switch the destination of the drained liquid from the first pipe to the second pipe during the rinsing treatment after the first chemical treatment, and to switch the destination of the drained liquid from the second pipe to the third pipe after the rinsing treatment, in a substrate processing apparatus.

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