Semiconductor processing chamber adapter

Abstract

To provide semiconductor processing systems and methods for delivering precursors within a system and chamber.SOLUTION: A semiconductor processing system 200 comprising a processing chamber 205 includes: a remote plasma unit 210 coupled with the processing chamber; and an adapter 215 coupled between the remote plasma unit and the processing chamber. The adapter is characterized by a first end 217 and a second end 218 opposite the first end. The remote plasma unit is coupled with the adapter at the first end, where the adapter defines a first central channel 219 extending more than 50% of a length of the adapter from the first end of the adapter and defines a transition from the central channel to a plurality of apertures 221 extending at least partially through the adapter.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] Cross - Reference to Related Applications This application claims the benefit and priority of U.S. Patent Application No. 17 / 366,761, filed on July 2, 2021, under the title "SEMICONDUCTOR PROCESSING CHAMBER ADAPTER", the entire content of which is incorporated herein by reference.

[0002] This technology relates to semiconductor systems, processes, and equipment. More specifically, this technology relates to systems and methods for supplying precursors within a system and a chamber.

Background Art

[0003] Integrated circuits are enabled by a process that creates complexly patterned material layers on a substrate surface. Creating patterned material on a substrate requires a controlled method for removing exposed material. Chemical etching is used for various purposes, including transferring a photoresist pattern to a lower layer, thinning a layer, or narrowing the lateral dimensions of features already present on a surface. Often, for example, it is desirable to have an etching process that etches one material faster than another to facilitate a pattern transfer process or the removal of an individual material. Such an etching process is said to be selective to the first material. As a result of the diversity of materials, circuits, and processes, etching processes have evolved using selectivity to various materials.

[0004] Etching processes can be called wet or dry, depending on the materials used in the process. Wet HF etching preferentially removes silicon oxide over other dielectrics and materials. However, wet processes can sometimes have difficulty penetrating certain constrained trenches, and the remaining material may deform. Dry etching processes can penetrate complex features and trenches, but may not provide an acceptable top-to-bottom profile. As the size of equipment continues to decrease in next-generation equipment, the way the system feeds precursors into and through the chamber can become increasingly important. As uniformity of processing conditions continues to be crucial, chamber design and system setup can play a significant role in the quality of the resulting equipment.

[0005] Therefore, there is a need for improved systems and methods that can be used to produce high-quality equipment and structures. These and other needs are addressed by this technology. [Overview of the project]

[0006] An exemplary semiconductor processing system may include a processing chamber. The system may include a remote plasma unit coupled to the processing chamber. The system may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled to the adapter at the first end. The adapter may define a first central channel extending more than 50% of the adapter's length from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the adapter's length from the second end of the adapter. The adapter may define a transition between the first central channel and the second central channel.

[0007] In some embodiments, the transition portion of the adapter defined between the first central channel and the second central channel may include a plurality of openings defined by the adapter and fluid-coupled between the first central channel and the second central channel. Each of the plurality of openings may be characterized by a cross-sectional diameter of less than about 10 mm. The first and second central channels may be characterized by similar cross-sectional diameters. The second central channel may extend only less than 10% of the length of the adapter from the second end of the adapter. The adapter may be coupled to electrical ground. The adapter may define a concave ledge between the first end and the second end. The semiconductor processing system may include a system housing mounted on the concave ledge of the adapter. The system housing may be grounded. The system may include an isolator coupled to the second end of the adapter. The isolator may be ceramic or may contain ceramic. The system may include a mixing manifold coupled between the isolator and the processing chamber. A mixing manifold may be characterized by a first end and a second end opposite the first end. The mixing manifold may be coupled to a processing chamber at the second end. The mixing manifold may define a central channel through which the mixing manifold passes. The mixing manifold may be electrically coupled to an RF power supply.

[0008] Some embodiments of this technology may encompass a semiconductor processing system. The system may include a remote plasma unit. The system may include a processing chamber. The chamber may include a gas box defining a central channel. The chamber may include a faceplate coupled to the gas box at a first surface of the faceplate. The chamber may include a spacer coupled to the faceplate at a second surface of the faceplate opposite the first surface. The chamber may include a showerhead coupled between the spacer and the processing area of ​​the processing chamber. The system may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled to the adapter at the first end. The adapter may define a first central channel extending more than 50% of the adapter's length from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the adapter's length from the second end of the adapter. The adapter can define a transition between the first central channel and the second central channel.

[0009] In some embodiments, the system may include a mixing manifold mounted on a gas box. The adapter may be coupled between the mixing manifold and a remote plasma unit. The gas box, faceplate, and mixing manifold may be electrically coupled to an RF power supply. The adapter may be coupled to electrical ground. The showerhead may be coupled to electrical ground. The plasma region may be defined between the showerhead and the faceplate. The transition portion of the adapter, defined between the first central channel and the second central channel, may include a plurality of openings defined by the adapter and fluidly coupling the first central channel and the second central channel. The adapter may define a concave ledge between the first end and the second end. The semiconductor processing system may include a system housing mounted on the concave ledge of the adapter. The system housing may be grounded.

[0010] Some embodiments of this technology may encompass a semiconductor processing system. The system may include a remote plasma unit. The system may include a processing chamber. The processing chamber may include a gas box defining a central channel. The processing chamber may include a faceplate coupled to the gas box at a first surface of the faceplate. The gas box and faceplate may be coupled to an RF power supply. The chamber may include a spacer coupled to the faceplate at a second surface of the faceplate opposite the first surface of the faceplate. The chamber may include a showerhead coupled between the spacer and the processing area of ​​the processing chamber. The showerhead may be coupled to electrical ground. The system may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled to the adapter at the first end. The adapter may define a first central channel extending more than 50% of the length of the adapter from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the adapter's length from a second end of the adapter. The adapter may define a transition between the first central channel and the second central channel. The adapter may be coupled to electrical ground. In some embodiments, the adapter may define a concave ledge between the first end and the second end. The semiconductor processing system may include a system housing mounted on the concave ledge of the adapter. The system housing may be grounded.

[0011] Such technologies can offer numerous advantages over conventional systems and techniques. For example, this technology can utilize a limited number of components compared to conventional designs. Furthermore, by configuring chamber components for composite plasma systems, parasitic or stray plasmas can be controlled or prevented. These and other embodiments, along with many of their advantages and features, will be described in more detail below in conjunction with the accompanying diagrams.

[0012] Further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of this specification and the drawings. [Brief explanation of the drawing]

[0013] [Figure 1] This is a top view of an exemplary processing system according to several embodiments of this technology. [Figure 2] This is a schematic cross-sectional view of an exemplary processing chamber according to several embodiments of this technology. [Figure 3] This is a cross-sectional view of a portion of an exemplary processing chamber according to several embodiments of this technology. [Figure 4] This is a cross-sectional view of a portion of an exemplary processing chamber according to several embodiments of this technology. [Figure 5] This figure shows the steps of a method for supplying a precursor through a processing system according to several embodiments of this technology. [Modes for carrying out the invention]

[0014] Some of the figures are included as schematic diagrams. Please understand that diagrams are for illustrative purposes only and should not be considered to scale unless specifically stated to be to scale. Furthermore, as schematic diagrams, they are provided to aid understanding and may not include all aspects or information compared to actual representations, and may contain exaggerations for illustrative purposes.

[0015] In the attached drawings, similar components and / or features may have the same reference label. Furthermore, different components of the same type may be distinguished by a letter following the reference label that distinguishes similar components. Where only the first reference label is used herein, this description applies to any similar components that have the same first reference label, regardless of the letter.

[0016] This technology includes semiconductor processing systems, chambers, and components for performing semiconductor manufacturing processes. Many dry etching processes performed during semiconductor manufacturing may involve multiple precursors. These etchants, when activated and combined in various ways, can be supplied to a substrate to remove or alter the appearance of the substrate. Conventional processing systems can provide precursors for deposition or etching in several ways. One way to provide enhanced precursors is to supply all of the precursors through a remote plasma unit before supplying them to a substrate such as a wafer through a processing chamber for processing. However, a problem with this process is that the power used to ignite the plasma can affect the process being performed, depending on the amount of dissociation that occurs. For example, in some processes, a large amount of dissociation of hydrogen-containing precursors may be beneficial, while a smaller amount of dissociation of fluorine-containing precursors may allow for more controlled etching. Furthermore, the amount of movement between the remote plasma unit and the substrate can make recombination a greater challenge.

[0017] Conventional processes may also involve supplying one precursor through a remote plasma device for plasma processing and supplying another precursor directly to the chamber. However, a problem with this process is that mixing the precursors can be difficult, which may not provide adequate control over etchant formation and may not result in a uniform etchant on the wafer or substrate. This can lead to the process not running uniformly across the substrate surface, potentially causing equipment problems as patterning and formation continue.

[0018] Additional processes for plasma formation may involve generating capacitively coupled plasma within the chamber, for example, in a remote region within the chamber or processing space. Wafer-level plasma can impact delicate features and affect chemical etching. Generating remote plasma within the processing space can offer several advantages. For example, low-power plasma may be generated to control ionization, and because this generation is closer to the substrate being processed, recombination due to travel distance may be less of a challenge. Furthermore, plasma nuclides may be distributed more uniformly radially outward than when supplied from a remote plasma unit, thereby allowing precursors to be supplied through a centrally located tube. However, generating plasma within a chamber where other components are coupled to the power supply but certain lid stack components may be grounded can increase parasitic plasma formation. As an example further discussed below, since an RPS unit may operate at a lower power frequency than the internal capacitively coupled plasma, the RPS unit may effectively act as ground, which can lead to plasma generation upstream of remote locations within the chamber, potentially damaging components and affecting etching uniformity.

[0019] This technology can overcome these problems by utilizing components and systems configured to limit or prevent plasma generation outside of desired locations, and by providing a chamber configured to offer combined plasma generation capability for improved system flexibility. The system of this technology may also include configurations of components that control the electrical coupling between components to give combined plasma generation capability.

[0020] While the remaining disclosures generally identify a particular etching process utilizing the disclosed technology, it will be readily apparent that the system and method are equally applicable to deposition and cleaning processes that may be carried out in the described chamber. Therefore, the technology should not be considered as being so limited to use in etching processes or chambers alone. Before describing embodiments of the technology and variations of its components for this system, this disclosure discusses one possible system and chamber to which the technology can be used.

[0021] Figure 1 shows a top view of one embodiment of a deposition, etching, firing, and curing chamber processing system 100 according to an embodiment. In this figure, a pair of forward-opening unified pods (FOUPs) 102 provide substrates of various sizes, which are received by a robotic arm 104 and placed in a low-pressure holding area 106 before being placed into one of the substrate processing chambers 108a-f located in tandem sections 109a-c. A second robotic arm 110 may be used to transport the substrate wafers from the holding area 106 to the substrate processing chambers 108a-f and vice versa. Each of the substrate processing chambers 108a-f can be equipped to perform several substrate processing steps, including periodic layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, degassing, orientation, and other substrate processes, as well as the dry etching process described herein.

[0022] The substrate processing chambers 108a - f may include one or more system components for depositing, annealing, curing, and / or etching a dielectric film on a substrate wafer. In one configuration, two pairs of processing chambers, e.g., 108c - d and 108e - f, may be used to deposit a dielectric material on the substrate, and a third pair of processing chambers, e.g., 108a - b, may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a - f, may be configured to etch a dielectric film on the substrate. Any one or more of the described processes may be performed in chambers separate from the manufacturing systems shown in different embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films by system 100 are possible.

[0023] FIG. 2 shows a schematic cross - sectional view of an exemplary processing system 200 according to an embodiment of the present technology. The system 200 may include a processing chamber 205 and a remotely - located plasma system ( "RPS") unit 210, which is partially shown. The remotely - located plasma unit 210 may be coupled to the processing chamber 205 having one or more components. The remotely - located plasma unit 210 may be coupled to one or more of an adapter 215, an isolator 225, and a mixing manifold 230. The mixing manifold 230 may be coupled to the upper portion of the processing chamber 205, and this inlet may be coupled to the processing chamber 205.

[0024] The adapter 215 may be coupled to the RPS unit in an embodiment. The adapter 215 may be characterized by a first end 217 and a second end 218 opposite the first end, in which case the RPS unit 210 is installed on the first end 217 of the adapter 215. The adapter 215 may define one or more central channels passing through portions of the adapter 215. For example, from the first end 217, a central channel 219, i.e., a first central channel, may extend at least partially through the adapter 215 towards the second end 218 and may extend through any length of the adapter 215. The central channel 219 may extend more than half of the length through the adapter 215. By configuring the adapter 215 such that the first central channel extends to a length exceeding 50% of the length of the adapter, as further described below, parasitic plasma formation within the adapter may be limited or prevented.

[0025] The adapter 215 may define a transition from the central channel 219 to a plurality of apertures 221 that may extend at least partially through the adapter 215 and may define a base of the first central channel 219 within the adapter 215. The transition may occur, for example, at a position below an intermediate point through the adapter, closer to the second end 218 of the adapter 215. For example, the apertures 221 may extend from the base of the first central channel 219 towards the second end 218 of the adapter 215 and may extend to fluidly couple with a second central channel 223. The second central channel 223 may extend from the plurality of apertures 221 to the second end 218 of the adapter 215. The second central channel 223 may extend less than about 50% of the length of the adapter 215 in the direction of flow from the RPS unit, less than about 40% of the length of the adapter, less than about 30% of the length of the adapter, less than about 20% of the length of the adapter, less than about 10% of the length of the adapter, or less than this.

[0026] Parasitic plasma formation can be restricted within the adapter by limiting the length of the second central channel passing through the adapter. Similarly, the opening 221 may be characterized by a diameter configured to restrict plasma formation within the opening by the hollow cathode effect. For example, in some embodiments, the opening 221 may be characterized by a cross-sectional diameter of less than about 50% of the diameter of the central channel 219, or by a diameter of less than about 40%, less than about 30%, less than about 20%, less than about 10%, less than about 5%, or less than this. The second central channel 223 may be characterized by a cross-sectional diameter similar to that of the first central channel 219 in some embodiments, but its diameter may be greater than or less than the diameter of the first central channel 219 in some embodiments.

[0027] Based on the plasma output used in the processing system, the opening 221 may be characterized by a cross-sectional diameter of less than about 10 mm, less than about 9 mm, less than about 8 mm, less than about 7 mm, less than about 6 mm, less than about 5 mm, less than about 4 mm, or less than these. This may limit or prevent plasma generation within the opening, thereby controlling plasma formation upstream of the mixing manifold 230 in some embodiments. The adapter 215 may also define a ledge, as further described below, on which a system cover or housing 220 may be mounted as shown. The housing may be coupled to electrical ground as shown, so the adapter 215 may be coupled to electrical ground in some embodiments of the Art.

[0028] The adapter 215 may be made of ceramic or insulating material, but in some embodiments, the adapter 215 may be made of or include aluminum, including aluminum oxide, aluminum treated on one or more surfaces, or other materials such as nickel or nickel-plated aluminum. For example, the inner surface of the adapter 215 may be coated with one or more materials to protect the adapter 215 from damage that may be caused by plasma emissions from the remote plasma unit 210. The inner surface of the adapter 215 may be anodized with a variety of materials that may be inert to fluorine plasma emissions and may include, for example, yttrium oxide or barium titanate.

[0029] An isolator 225 may be coupled to the adapter 215, and the isolator 225 may be coupled to the second end 218 of the adapter 215. The isolator 225 may be ceramic or contain ceramic and may operate to electrically isolate the adapter 215 from a mixing manifold 230 which may be operating at a different potential from the adapter 215. The isolator 225 may define a central opening 227 through the isolator 225. The central opening 227 may be characterized by a tapered shape through the isolator 225 from a portion adjacent to the second central channel 223 of the adapter 215 to the opposite side of the isolator 225. The portion of the central opening 227 adjacent to the second central channel 223 may be characterized by a diameter equal to or similar to the diameter of the second central channel 223. The central opening 227 may be characterized by a taper ratio of about 10% or more along the length of the isolator 225, and in embodiments, it may be characterized by a taper ratio of about 20% or more, about 30% or more, about 40% or more, about 50% or more, about 60% or more, about 70% or more, about 80% or more, about 90% or more, about 100% or more, about 150% or more, about 200% or more, about 300% or more, or more.

[0030] The mixing manifold 230 may be coupled to the isolator 225 at a first end 232 or a first surface, and to the chamber 205 at a second end 234 opposite the first end 232. The mixing manifold 230 may define a central channel 236 that may extend from the first end 232 to the second end 234 and may be configured to supply precursors into the processing chamber 205. The mixing manifold 230 may also be configured to incorporate additional precursors along with the mixed precursors supplied from the adapter 215. The mixing manifold 230 may provide a second stage of mixing in the system. The mixing manifold 230 may define ports along the outside of the mixing manifold 230, such as along the side or sidewall of the mixing manifold 230. The mixing manifold 230 may also define one or more trenches within the first surface 232 of the mixing manifold 230, which may provide fluid access from the ports to the central channel 236.

[0031] The central channel 236 may be characterized by a first portion extending from the first end 232 to the flared portion. The first portion of the central channel 236 may be characterized by a cylindrical profile and by a diameter similar to or greater than the exit of the central opening 227 of the isolator 225. The flared portion may, in embodiments, be characterized by a flare percentage of about 10% or more, about 20% or more, about 30% or more, about 40% or more, about 50% or more, about 60% or more, about 70% or more, about 80% or more, about 90% or more, about 100% or more, about 150% or more, about 200% or more, about 300% or more, or greater. The mixing manifold 230 may, in embodiments, be made of the same or different material as the adapter 215. For example, the mixing manifold 230 may contain nickel, which can provide adequate protection to all precursors that may come into contact with parts of the mixing manifold. Unlike conventional techniques, fluorine plasma ejecta may already be mixed upstream in the mixing manifold, thus avoiding problems related to recombination. For example, while we do not wish to be bound by any particular theory, nickel can catalyze the recombination of fluorine radicals to diatomic fluorine, which can contribute to material loss on the substrate in conventional techniques. This process may be limited because when fluorine ejecta are mixed before being supplied to nickel, nickel-plated, or coated components, the concentration of fluorine ejecta decreases, providing further protection of the features at the substrate level.

[0032] The chamber 205 may include several components in a stacked arrangement. The chamber stack may include a gas box 240, a blocker plate 250, a faceplate 260, a spacer 265, an optional ion suppression element 270, a shower head 280, and a lid spacer 285. The components can be used to distribute a precursor or set of precursors through the chamber to provide a uniform supply to a processing substrate 293 for etchants or other precursors. The substrate 293 may be mounted on a pedestal 295 which may be raised or lowered during operation or for a particular operation in different embodiments. In embodiments, these distribution components may each be a laminate that at least partially defines the outside of the chamber 205.

[0033] The gas box 240 may define a chamber inlet coupled to the mixing manifold 230. A central channel 242 may be defined through the gas box 240 to supply precursors into the chamber 205. The gas box inlet may be sized to align with the outlet of the mixing manifold 230. For example, the inlet and / or central channel 242 may be characterized by a diameter similar to or larger than the outlet of the mixing manifold in an embodiment. The central channel 242 may extend through the gas box 240 and be configured to supply one or more precursors into the internal volume of the processing chamber. The gas box 240 may include or be characterized by a first surface 243, such as the top surface, and a second surface 245 opposite the first surface 243, such as the bottom surface of the gas box 240. A heater or weld defining a channel for receiving a cooling fluid for temperature control may be coupled to the top surface 243.

[0034] The second surface 245 of the gas box 240 may be coupled to a blocker plate 250, to which, for example, the gas box may be attached or coupled. The blocker plate 250 may be characterized by a diameter equal to or similar to the diameter of the projection of the gas box 240. The blocker plate 250 may define a plurality of openings through the blocker plate 250, only a sample is shown, which may allow the distribution of a precursor such as etchant from the central channel 242 of the gas box and begin distributing the precursor through the chamber 205 for uniform supply to the substrate. The faceplate 260 may include a first surface 262 and a second surface 264 opposite the first surface 262. The faceplate 260 may engage with the outer annular portion of the gas box by being coupled to the gas box 240 at the first surface 262. The faceplate 260 may define a recess 263 within a first surface 262 that can define a volume in which a blocker plate 250 can be installed, and within this recess, a gas box 240 and a central channel 242 may extend.

[0035] The blocker plate may be kept at a distance from the faceplate to allow for further distribution of the precursor after it has been distributed through the blocker plate. In some embodiments, one or more of the components of the gas box, blocker plate, and faceplate may be in direct physical and electrical contact with the mixing manifold. The components may be electrically coupled to a power source, such as an RF power supply 255, which can power the components to generate plasma within a region defined between the faceplate and other downstream components. To generate a capacitively coupled plasma between the faceplate and one or more other components, a spacer 265 may be placed between the faceplate and the other components, which can electrically isolate the faceplate from the other components. Therefore, the spacer 265 may be a dielectric component such as ceramic or other insulating material in some embodiments of the art.

[0036] The ion suppression element 270 may be positioned close to the second surface 264 of the faceplate 260 and may be coupled on the opposite side of the spacer 265. Together with the faceplate 260, the ion suppression element 270, when radially defined by the spacer 265, may define a remote plasma region 267 within the processing chamber. This region can be called remote in that the substrate being processed may not be directly exposed to plasma emissions generated in the plasma region 267. In this way, plasma impact on the wafer can be limited or prevented. Furthermore, the ion suppression element 270 may be configured to reduce ion transfer into the processing region of the chamber 205 containing the substrate. The ion suppression element 270 may define a plurality of openings through the structure. A showerhead 280 may be disposed adjacent to the ion suppression element 270, and the ion suppression element may be mounted on the showerhead 280. Any perforated plate or manifold may be included in embodiments of the art, but in some embodiments the showerhead 280 may be a dual-channel showerhead as shown. A showerhead may include two plates joined together to define a central volume through which separate precursors can flow from an external port or channel. The lower plate, facing the processing area, may define an opening that provides fluid access from the volume, while the top plate may prevent upstream access from the upper plate. The upper and lower plates may also define axially aligned holes to create a channel extending through the showerhead. Thus, the showerhead may allow precursors to be supplied from upstream through the showerhead, and the precursors may not interact with each other supplied through the internal volume defined by the showerhead until each precursor exits the lower plate of the showerhead and enters the processing area.

[0037] The showerhead 280 may be mounted on a lid spacer 285 that can at least partially define a processing area where a substrate 293 may be arranged for semiconductor processing. The lid spacer 286 may be made of an insulating or dielectric material in some embodiments, but in embodiments, the components may also be conductive. In some embodiments, one or more components of the ion suppression element 270, the showerhead 280, and the lid spacer 285 may be in direct physical and electrical contact. The components may be electrically coupled to an electrical ground that can control internal plasma formation and may be motorized, and can limit the formation to a remote plasma region 267 between the ion suppression element 270, which may be grounded. Thus, the system 200 may include both an RPS unit for remote plasma generation and an internal region of the chamber where plasma generation may also occur.

[0038] As described above, the mixing manifold 230 may be electrically coupled to the gas box 240 and other components of the power supply electrode. However, the adapter 215 may be grounded. In some conventional setups, such a configuration may allow plasma to be generated upstream of the gas box while the power supply electrode is operating. This may damage components and affect plasma formation in the distant plasma region 267, potentially reducing the uniformity of etching and processing on the substrate. Furthermore, the RPS unit may often operate at a lower frequency than the capacitively coupled plasma power supply, which may allow backflowing plasma to enter and damage the RPS unit. For example, while the power supply 255 may operate at any number of higher frequencies, such as 13.56 MHz in one non-limiting example, the RPS unit may operate at lower frequencies, such as several hundred kilohertz or less. In conventional setups that may not include the additional grounding discussed here, the RPS unit may effectively act as an additional grounding path for the power supply electrode due to the mismatch in operating frequencies. Components may be damaged as plasma may then be generated upstream and enter the RPS unit. However, this technology can limit or prevent these effects by configuring and coupling the components upstream of the gas box. By utilizing the components configured in the embodiments of this technology, the adapter may be grounded to prevent plasma intrusion into the RPS unit, and the components may be configured to limit or prevent plasma generation.

[0039] Figure 3 shows a partial cross-sectional view of an exemplary processing system 200 according to several embodiments of the present technology. The figure may show additional embodiments of the components previously discussed and may include any features, embodiments, or characteristics of any of the components described above. As previously discussed, the RPS unit 210 may be mounted on the first end of the adapter 215, and the adapter 215 may be coupled with the isolator 225 at the second end of the adapter. The adapter 215 may also define a ledge 305 between the first end of the adapter, which may include a mating flange for the RPS unit as shown, and the second end of the adapter, which may include a mating flange for the lower components as discussed below. The ledge 305 may be a concave ledge from the outer diameter of the adapter, which may be spaced along the length of the adapter, which will be positioned along the portion in which the first central channel 219 is defined.

[0040] The system housing 220 may be mounted on the ledge 305 as shown and may be coupled to the adapter. As previously described, the system housing may be grounded, thereby electrically grounding the adapter when coupled to the adapter 215. This may limit or prevent plasma generation in the RPS unit based on the operation of the downstream electrodes. The system housing may be directly coupled to the adapter 215 by a connector 307 as shown, which may ensure that the components remain in contact. The connector 307 may be any type of coupling including bolts which may be installed in a bushing as shown, but it should be understood that any coupling or fastener may be used to maintain physical contact between the components. To maintain symmetry for electrical coupling, in some embodiments a channel 309 may be defined around the ledge 305. An RF strap or other conductive material may be installed within the channel to provide contact with the housing along the adapter.

[0041] The flange 310 may be defined at the second end of the adapter 215 and may define one or more openings to allow coupling with additional components. As shown, the adapter 215 may be coupled to the gas box 240 together with the isolator 225 and the mixing manifold 230. Elastomer elements or O-rings may be disposed between the components to fluidly seal them during operation. However, as previously described, the adapter 215 may be grounded, while the mixing manifold 230 and the gas box 240 may be coupled to a power source to act as power supply electrodes for plasma generation. To limit short circuits, in some embodiments of the art, connecting components used to couple system components may be electrically isolated from the adapter 215. As shown, one or more openings may be defined in each component to receive bolts, fasteners, or other coupling components. However, the bushing 212 may be positioned and recessed as shown in each opening of the adapter 215, thereby limiting or preventing contact or electrical coupling between the bolt and the grounded adapter. Furthermore, the openings defined through the adapter may be characterized by a diameter that may be at least twice the diameter of the coupling components, thereby limiting electrical short circuits between materials. In some embodiments, the bushing 212 may extend entirely through the opening in the adapter and may be positioned in or within the isolator.

[0042] As described above, due to the grounded adapter, plasma generation upstream of the powered mixing manifold can be a challenge in the conventional technology. However, the technology may include an adapter configured to limit plasma generation within the components. For example, as previously described, the second central channel 223 may extend only about 50% of the length of the adapter 215, less than 20% of the length of the adapter, less than 10% of the length of the adapter, or less in the direction of flow from the RPS unit, thereby controlling the available space for plasma generation. For example, the length of the second portion may be maintained at less than about 5 cm, less than about 4 cm, less than about 3 cm, less than about 2 cm, less than about 1 cm, less than about 9 mm, less than about 8 mm, less than about 7 mm, less than about 6 mm, less than about 5 mm, less than about 4 mm, less than about 3 mm, less than about 2 mm, or less, in which case the chamber may be operated at a pressure of tens of tors or less.

[0043] Conventional technology utilizes adapters that increase the distance to the components in this electrical configuration, which can result in a hollow cathode effect in that region, potentially increasing the current density within that area. This can lead to improved ionization, which can advance plasma generation within the components. This technology can limit the distance to any of the above ranges, thereby limiting or preventing plasma generation during the operation of the functioning capacitively coupled electrodes. By reducing the spacing, the mean free path length can be controlled before collision with the transition, thereby preventing ionization in the components. Similarly, the opening 221 defined by the transition between the first central channel 219 and the second central channel 223 can be sized to prevent the hollow cathode effect, and in some embodiments of this technology, it can be sized to any of the above ranges, for example, less than about 10 mm, less than about 9 mm, less than about 8 mm, less than about 7 mm, less than about 6 mm, less than about 5 mm, less than about 4 mm, less than about 3 mm, or smaller.

[0044] The central opening 227 of the isolator 225 may also affect the possibility of plasma generation in the space defined by the central opening, which can create a volume between the electric mixing manifold and the grounded adapter. Therefore, depending on the power supplied and the pressure under which the chamber can operate, in some embodiments the central opening 227 may be replaced with multiple openings. Figure 4 shows a partial cross-sectional view of an exemplary processing system 200 according to some embodiments of the present art. The figure may show additional embodiments of the components discussed previously and may include any features, embodiments, or characteristics of any of the components described above. The figure may show additional isolator configurations according to some embodiments of the present art.

[0045] The isolator 405 may include any features, embodiments, or characteristics of the isolator 225, as discussed above, and may include multiple channels 410 instead of a central opening, as previously described. Because the insulating isolator defines the space between the capacitively coupled electrodes, plasma generation can proceed in the volume defined by the isolator. The diameter of a single centrally defined opening may be reduced in some embodiments, but depending on the operating parameters of the chamber, such as pressure and plasma electrode power, plasma generation may not be prevented while maintaining adequate flow through the components. By including multiple channels 410, sufficient flow through the isolator can be maintained and plasma generation can be prevented. For example, the opening may be maintained at any of the above diameters relative to the opening 221 defined in the transition in the adapter. Furthermore, as shown, the channels 410 may be laterally offset from the central axis through any opening 221 in the transition in the adapter. Therefore, in some embodiments, there may be no channels 410 axially aligned with any opening 221 in the adapter. This can also limit the mean free path length in any direction before collision, thereby preventing plasma generation between the mixing manifold and the adapter. By utilizing the components and configurations according to embodiments of this technology, the RPS unit and capacitively coupled plasma can be used to improve operational flexibility compared to conventional systems.

[0046] Figure 5 shows the steps of Method 500, which performs the process in a system according to several embodiments of the present technology. Method 500 may be performed in System 200 and may allow for improved processing flexibility while protecting components from etchant damage and limiting upstream plasma generation during capacitively coupled plasma formation. Method 500 may include several steps of plasma processing and may describe steps that may be performed in an exemplary system, but the steps may be performed in any number of steps in a different order. Although an etching process is described, it should be understood that the process may similarly include a cleaning process or a deposition process.

[0047] Method 500 may include forming plasma in the RPS unit in an optional step 505. In step 510, plasma ejecta may flow into the processing chamber. The plasma ejecta may flow through any of the components contained between the RPS unit and the chamber, and in some embodiments, additional precursors may flow into one or more of the components, for example, through a mixing manifold, and mix with the plasma ejecta. In an optional step 515, the plasma ejecta and material may flow through the chamber to perform a process on a substrate disposed within the chamber or within the processing area of ​​the chamber.

[0048] Method 500 may also include forming a plasma in the processing chamber in step 520, for example, between the faceplate and the ion suppression element, as previously described. In some embodiments, the plasma may be contained within a defined remote plasma region within the processing chamber, and the formation of the plasma upstream from the remote region, such as in an isolator or adapter as previously described, may be restricted or prevented. In an optional step 525, plasma emissions may flow into the processing region and act on the processing chamber or a substrate disposed within the processing region. By utilizing the components and chamber configurations described previously, improved plasma uniformity and processing accuracy can be provided.

[0049] The preceding description includes numerous details for illustrative purposes to help understand the various embodiments of this technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0050] While several embodiments have been disclosed, those skilled in the art will recognize that various improvements, alternative configurations, and equivalents may be used without departing from the spirit of the embodiments. Furthermore, some well-known processes and elements have not been described in order to avoid unnecessarily obscuring the Art. Therefore, the above description should not be taken as limiting the scope of the Art.

[0051] If a range of values ​​is given, it should be understood that each intervening value between the upper and lower limits of that range is also specifically disclosed, down to the smallest fraction of the lower limit, unless otherwise explicitly indicated in the context. Any narrower range between any stated or unstated intervening value within the stated range and any other stated or intervening value within that stated range is included. The upper and lower limits of these smaller ranges may be independently included in or excluded from that range, and each range in which either one or both of the upper and lower limits are included, neither is included, or both are included, according to any specifically excluded upper or lower limits within the stated range, is also included in this art. If the stated range includes one or both of the upper and lower limits, the range excluding either one or both of these included upper and lower limits is also included.

[0052] As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural references unless otherwise explicitly indicated in the context. Thus, for example, a reference to "a certain opening" includes multiple such openings, and a reference to "its precursor" includes one or more precursors and their equivalents known to those skilled in the art, and so on.

[0053] Furthermore, as used herein and in the following claims, the words “comprise,” “comprising,” “contain,” “containing,” “include,” and “including” are intended to indicate the presence of the described feature, integer, component, or process, but not to exclude the presence or addition of one or more other features, integers, components, processes, operations, or groups.

Claims

1. A semiconductor processing system adapter coupled between a remote plasma unit and a processing chamber, comprising an adapter body characterized by a first end and a second end opposite to the first end, The adapter defines a first central channel extending from the first end of the adapter for more than 50% of the length of the adapter, the adapter defines a second central channel extending from the second end of the adapter for less than 50% of the length of the adapter, the adapter defines a transition between the first central channel and the second central channel, and the transition of the adapter defined between the first central channel and the second central channel includes a plurality of openings defined by the adapter and fluidly coupling the first central channel and the second central channel. Semiconductor processing system adapter.

2. The semiconductor processing system adapter according to claim 1, wherein each of the plurality of openings is characterized by a cross-sectional diameter of approximately 10 mm or less.

3. The semiconductor processing system adapter according to claim 1, wherein each of the plurality of openings is characterized by a cross-sectional diameter of 50% or less of the diameter of the first central channel.

4. The semiconductor processing system adapter according to claim 1, wherein the first central channel and the second central channel are characterized by similar cross-sectional diameters.

5. The semiconductor processing system adapter according to claim 1, wherein the second central channel extends less than 10% of the length of the adapter from the second end of the adapter.

6. The semiconductor processing system adapter according to claim 1, wherein the adapter is connected to electrical ground.

7. The semiconductor processing system adapter according to claim 1, wherein the adapter defines a concave ledge between the first end and the second end.

8. The semiconductor processing system adapter according to claim 7, wherein the channel is defined around the concave ledge.

9. The semiconductor processing system adapter according to claim 8, wherein a conductive material is installed in the channel.

10. The semiconductor processing system adapter according to claim 9, wherein the conductive material includes an RF strap.

11. The semiconductor processing system adapter according to claim 1, wherein the adapter body comprises a ceramic or insulating material.

12. The semiconductor processing system adapter according to claim 1, wherein the adapter body comprises one or more of aluminum, aluminum oxide, nickel, and nickel-plated aluminum.

13. The semiconductor processing system adapter according to claim 1, wherein the inner surface of the adapter body is anodized with a material that is inert to fluorine plasma effluent.

14. The semiconductor processing system adapter according to claim 13, wherein the material comprises yttrium oxide or barium titanate.

15. The semiconductor processing system adapter according to claim 1, wherein the first end includes a fitting flange.

16. The semiconductor processing system adapter according to claim 1, wherein the second end includes a fitting flange.

Images