Power module

Abstract

To provide a power module which can be stably operated.SOLUTION: In a power module 1A, a plurality of second power semiconductor elements 40B is provided in a second loading layer 14A while being arrayed in one direction. A plurality of second control side connection members 32B and second drive side connection members 33B is provided correspondingly to the plurality of second power semiconductor elements 40B. When a path between a gate electrode 43 of the second power semiconductor element 40B and a second control terminal 53B is defined as a third conductive path and a path between a source electrode 42 of the second power semiconductor element 40B and a second detection terminal 54B is defined as a fourth conductive path, at least one of a second control layer 25 (26) and a second drive layer 27 (28) includes a second detour part 27b (26b) which takes a detour in such a manner that a sum of a length of the third conductive path and a length of the fourth conductive path becomes close to each other between the plurality of second power semiconductor elements 40B.SELECTED DRAWING: Figure 17

Description

Technical Field

[0001] The present disclosure relates to a power module.

Background Art

[0002] As an example of the above power module, a power module configured as an inverter device is known (see, for example, Patent Document 1). This power module includes a power semiconductor element composed of transistors such as an IGBT (Insulated Gate Bipolar Transistor) and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).

Prior Art Documents

[0006] Furthermore, a power module according to one aspect of the present disclosure comprises an electrically insulating substrate having a main substrate surface and a back substrate surface facing opposite directions in the thickness direction, and a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each having conductivity, formed on the main substrate surface. The power module further comprises a plurality of first power semiconductor elements mounted on the first mounting layer, each having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a first element main surface on which a control electrode is formed, and arranged in one direction when viewed from the thickness direction. The power module further comprises a plurality of second power semiconductor elements mounted on the second mounting layer, each having a second element back surface on which a first drive electrode electrically connected to an output terminal is formed, a second drive electrode electrically connected to a second input terminal, and a control electrode, and arranged in one direction. The power module further comprises: a plurality of first control-side connecting members that connect the control electrodes of the plurality of first power semiconductor elements to the first control layer and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements; a plurality of first drive-side connecting members that connect the second drive electrodes of the plurality of first power semiconductor elements to the first drive layer and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements; a plurality of second control-side connecting members that connect the control electrodes of the plurality of second power semiconductor elements to the second control layer and are arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements; and a plurality of second drive-side connecting members that connect the second drive electrodes of the second power semiconductor elements to the second drive layer and are arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements. The power module further comprises: a first control terminal electrically connected to the first control layer; a second control terminal electrically connected to the second control layer; a first detection terminal electrically connected to the first drive layer; and a second detection terminal electrically connected to the second drive layer.The plurality of second power semiconductor elements include a first-end power semiconductor element and a second-end power semiconductor element located at both ends in the arrangement direction of the plurality of second power semiconductor elements. The path between the control electrode and the second control terminal of the first-end power semiconductor element is defined as the third-end control side conductive path, the path between the second drive electrode and the second detection terminal of the first-end power semiconductor element is defined as the third-end drive side conductive path, the sum of the length of the third-end control side conductive path and the length of the third-end drive side conductive path is defined as the third sum, the path between the control electrode and the second control terminal of the second-end power semiconductor element is defined as the fourth-end control side conductive path, the path between the second drive electrode and the second detection terminal of the second-end power semiconductor element is defined as the fourth-end drive side conductive path, and the sum of the length of the fourth-end control side conductive path and the length of the fourth-end drive side conductive path is defined as the fourth sum, then at least one of the second control layer and the second drive layer has a second bypass portion that bypasses the conductive path so that the third sum and the fourth sum are closer together. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a perspective view of the power module according to the first embodiment. [Figure 2] Figure 2 is a plan view of the power module shown in Figure 1. [Figure 3] Figure 3 is a side view of the power module shown in Figure 1. [Figure 4] Figure 4 is a side view of the power module shown in Figure 1, viewed from a different direction than in Figure 3. [Figure 5] Figure 5 is a side view of the power module shown in Figure 1, viewed from a different direction than in Figures 3 and 4. [Figure 6] Figure 6 is a bottom view of the power module shown in Figure 1. [Figure 7] Figure 7 is a plan view showing the internal structure of the power module shown in Figure 1. [Figure 8] Figure 8 is a circuit diagram showing the circuit configuration of the power module in Figure 1. [Figure 9] Figure 9 is a cross-sectional view taken along line 9-9 in Figure 7. [Figure 10]Figure 10 is a cross-sectional view taken along line 10-10 in Figure 7. [Figure 11] Figure 11 is an enlarged view of a portion of Figure 7. [Figure 12] Figure 12 is an enlarged view of a portion of Figure 7. [Figure 13] Figure 13 is an enlarged view of a portion of Figure 7. [Figure 14] Figure 14 is an enlarged view of a portion of Figure 7. [Figure 15] Figure 15 is an enlarged view of a portion of Figure 14. [Figure 16] Figure 16 is an enlarged view of a portion of Figure 14. [Figure 17] Figure 17 is an enlarged view of a portion of Figure 7. [Figure 18] Figure 18 is an enlarged view of a portion of Figure 17. [Figure 19] Figure 19 is an enlarged view of a portion of Figure 17. [Figure 20] Figure 20 is a plan view showing the internal structure of the power module of the comparative example. [Figure 21] Figure 21 is an enlarged view of a portion of Figure 20. [Figure 22] Figure 22 is an enlarged view of a portion of Figure 20. [Figure 23] Figure 23 is a graph showing the relationship between each power semiconductor element and the inductance value of each power semiconductor element for the power module of the first embodiment and the power module of the comparative example. [Figure 24] Figure 24 is a graph showing an example of the voltage applied to the gate electrode of a given power semiconductor element in a comparative example power module. [Figure 25] Figure 25 is a graph showing an example of the voltage applied to the gate electrode of a predetermined power semiconductor element in the power module of this embodiment. [Figure 26] Figure 26 is a plan view showing the internal structure of the power module according to the second embodiment. [Figure 27] Figure 27 is an enlarged view of a portion of Figure 26. [Figure 28]Figure 28 is an enlarged view of a part of Figure 27. [Figure 29] Figure 29 is an enlarged view of a part of Figure 27. [Figure 30] Figure 30 is an enlarged view of a part of Figure 26. [Figure 31] Figure 31 is an enlarged view of a part of Figure 30. [Figure 32] Figure 32 is an enlarged view of a part of Figure 30. [Figure 33] Figure 33 is a circuit diagram of a three-phase AC inverter to which a power module is applied. [Figure 34] Figure 34 is a circuit diagram of a three-phase AC inverter to which a power module is applied. [Figure 35] Figure 35 is a plan view showing a part of the internal structure of a power module of a modification example, enlarged. [Figure 36] Figure 36 is a plan view showing a part of the internal structure of a power module of a modification example, enlarged. [Figure 37] Figure 37 is a plan view showing a part of the internal structure of a power module of a modification example, enlarged. [Figure 38] Figure 38 is a plan view showing a part of the internal structure of a power module of a modification example, enlarged. [Figure 39] Figure 39 is a plan view of a first power semiconductor device of a power module of a modification example.

[0008] [Detailed Description] Hereinafter, embodiments of the power module will be described with reference to the drawings. The embodiments shown below illustrate configurations and methods for embodying the technical idea, and do not limit the materials, shapes, structures, arrangements, dimensions, etc. of each component part to those described below. The following embodiments can be variously modified.

[0009] [First Embodiment] Referring to FIGS. 1 to 25, the power module 1A of the first embodiment will be described. Figures 1 to 6 show the external shape of power module 1A. Figure 7 shows the internal structure of power module 1A. In Figure 9, for convenience, the case 80 and terminals 50 are omitted.

[0010] As shown in Figures 1 to 7, the power module 1A mainly comprises a substrate 10, a connecting member 30, a power semiconductor element 40, terminals 50, a sealing resin 60 (see Figure 10), a heat sink 70, and a case 80 that houses these components. The power module 1A is configured to supply a current of, for example, 300A to 1000A. Note that in Figure 7, the sealing resin 60 is omitted for convenience. As shown in Figures 1 to 7, the substrate 10, the connecting member 30, the power semiconductor element 40, and the sealing resin 60 are housed in the heat sink 70 and case 80, respectively, and are not exposed to the outside. On the other hand, the terminals 50 are housed in the case 80 with a portion exposed or protruding from the outside of the case 80. The power module 1A is used, for example, in an inverter device. As shown in Figures 1, 2, and 7, the shape of the power module 1A is rectangular when viewed from the thickness direction of the substrate 10 (hereinafter referred to as "plan view"). For the sake of explanation, the direction along the thickness direction of the substrate 10 will be referred to as the "thickness direction Z," and the two mutually orthogonal directions perpendicular to the thickness direction Z will be referred to as the "horizontal direction X" and the "vertical direction Y," respectively. In this embodiment, the longer side of the power module 1A is the horizontal direction X, and the shorter side is the vertical direction Y.

[0011] Figure 8 shows the circuit configuration of the power module 1A of this embodiment. The power module 1A has a first power semiconductor element group 40AT consisting of a plurality of first power semiconductor elements 40A as power semiconductor elements 40, and a second power semiconductor element group 40BT consisting of a plurality of second power semiconductor elements 40B. For convenience, in Figure 8, one first power semiconductor element 40A is shown as the first power semiconductor element group 40AT, and one second power semiconductor element 40B is shown as the second power semiconductor element group 40BT.

[0012] Each first power semiconductor element 40A in the first power semiconductor element group 40AT and each second power semiconductor element 40B in the second power semiconductor element group 40BT are used as switching elements. Each power semiconductor element 40A, 40B is a transistor made of, for example, Si (silicon), SiC (silicon carbide), GaN (gallium nitride), GaAs (gallium arsenide), or Ga2O3 (gallium oxide). When each power semiconductor element 40A, 40B is made of SiC, it is suitable for high-speed switching. In this embodiment, each power semiconductor element 40A, 40B is an N-type MOSFET made of SiC. However, each power semiconductor element 40A, 40B is not limited to MOSFETs, and may be a field-effect transistor including a MISFET (Metal-Insulator-Semiconductor FET), or a bipolar transistor including an IGBT, etc. Each power semiconductor element 40A, 40B may be an N-channel type MOSFET or a P-channel type MOSFET.

[0013] Each power semiconductor element 40A, 40B has a drain electrode 41, a source electrode 42, and a gate electrode 43. Each power semiconductor element 40A, 40B also has a body diode 44. Although not shown in Figure 8, multiple first power semiconductor elements 40A of the first power semiconductor element group 40AT are connected in parallel with each other. That is, the drain electrodes 41 of multiple first power semiconductor elements 40A are connected to each other, and the source electrodes 42 of multiple first power semiconductor elements 40A are connected to each other. Similarly, multiple second power semiconductor elements 40B of the second power semiconductor element group 40BT are connected in parallel with each other. That is, the drain electrodes 41 of multiple second power semiconductor elements 40B are connected to each other, and the source electrodes 42 of multiple second power semiconductor elements 40B are connected to each other. The first power semiconductor element group 40AT and the second power semiconductor element group 40BT are connected in series with each other. Specifically, the source electrodes 42 of the first power semiconductor element group 40AT (the source electrodes 42 of the multiple first power semiconductor elements 40A) are electrically connected to the drain electrodes 41 of the second power semiconductor element group 40BT (the drain electrodes 41 of the multiple second power semiconductor elements 40B). Thus, in this embodiment, the power module 1A constitutes an inverter circuit, the first power semiconductor element group 40AT constitutes the upper arm, and the second power semiconductor element group 40BT constitutes the lower arm.

[0014] The drain electrode 41, source electrode 42, and gate electrode 43 of each of the multiple first power semiconductor elements 40A of the first power semiconductor element group 40AT and the multiple second power semiconductor elements 40B of the second power semiconductor element group 40BT are respectively connected to terminal 50.

[0015] As shown in Figures 1, 2, and 8, terminal 50 includes a first input terminal 51A, a second input terminal 51B, a first output terminal 52A, a second output terminal 52B, a first control terminal 53A, a second control terminal 53B, a first detection terminal 54A, a second detection terminal 54B, a power supply current terminal 55, and a pair of temperature detection terminals 56. Note that the pair of temperature detection terminals 56 are not electrically connected to the respective power semiconductor elements 40A and 40B, and are therefore not shown in Figure 8 for convenience.

[0016] The first input terminal 51A is electrically connected to the drain electrode 41 of the first power semiconductor element group 40AT. That is, the first input terminal 51A is electrically connected to each of the drain electrodes 41 of the multiple first power semiconductor elements 40A. The second input terminal 51B is electrically connected to the source electrode 42 of the second power semiconductor element group 40BT. That is, the second input terminal 51B is electrically connected to each of the source electrodes 42 of the multiple second power semiconductor elements 40B. Each output terminal 52A, 52B is electrically connected to node N1 between the source electrode 42 of the first power semiconductor element group 40AT and the drain electrode 41 of the second power semiconductor element group 40BT. That is, each output terminal 52A, 52B is electrically connected to node N1 between the source electrode 42 of the multiple first power semiconductor elements 40A and the drain electrodes 41 of the multiple second power semiconductor elements 40B. The first control terminal 53A is electrically connected to the gate electrode 43 of the first power semiconductor element group 40AT. Specifically, the first control terminal 53A is electrically connected to each of the gate electrodes 43 of the multiple first power semiconductor elements 40A. The second control terminal 53B is electrically connected to the gate electrode 43 of the second power semiconductor element group 40BT. Specifically, the second control terminal 53B is electrically connected to each of the gate electrodes 43 of the multiple second power semiconductor elements 40B. The first detection terminal 54A is electrically connected to the source electrode 42 of the first power semiconductor element group 40AT. Specifically, the first detection terminal 54A is electrically connected to each of the source electrodes 42 of the multiple first power semiconductor elements 40A. The second detection terminal 54B is electrically connected to the source electrode 42 of the second power semiconductor element group 40BT. Specifically, the second detection terminal 54B is electrically connected to each of the source electrodes 42 of the multiple second power semiconductor elements 40B. The power supply current terminal 55 is electrically connected to node N2 between the drain electrode 41 of the first power semiconductor element group 40AT and the first input terminal 51A. In other words, the power supply current terminal 55 is electrically connected to node N2 between each of the drain electrodes 41 of the multiple first power semiconductor elements 40A and the first input terminal 51A.In this embodiment, each control terminal 53A, 53B, each detection terminal 54A, 54B, power supply current terminal 55, and a pair of temperature detection terminals 56 are electrically connected to a control circuit (not shown) located outside the power module 1A.

[0017] As shown in Figures 1 and 2, terminals 51A, 51B, 52A, 52B, 53A, 53B, 54A, 54B, 55, and 56 are each provided on case 80. As shown in Figures 1, 2, and 7, the case 80 is formed in a frame shape in a plan view, surrounding the substrate 10, the connecting member 30, and the power semiconductor element 40. The case 80 is made of a synthetic resin that has electrical insulating properties and excellent heat resistance, such as PPS (polyphenylene sulfide). The case 80 includes a pair of side walls 81A, 81B, a pair of terminal bases 82A, 82B, a plurality of mounting parts 83, a power terminal block 84, and an output terminal block 85.

[0018] As shown in Figures 2, 6, and 7, in a plan view, the pair of side walls 81A and 81B are spaced apart from each other in the vertical direction Y and extend along the horizontal direction X. As shown in Figures 3 and 5, in a side view, the pair of side walls 81A and 81B each extend along the thickness direction Z. As shown in Figures 2 and 7, a first control terminal 53A, a first detection terminal 54A, a power supply current terminal 55, and a pair of temperature detection terminals 56 are located inside the side wall 81A. The first control terminal 53A, the first detection terminal 54A, the power supply current terminal 55, and the pair of temperature detection terminals 56 are each supported by the side wall 81A. As shown in Figures 1 and 3, the first control terminal 53A, the first detection terminal 54A, the power supply current terminal 55, and the pair of temperature detection terminals 56 each protrude from the side wall 81A in the thickness direction Z. Furthermore, as shown in Figures 2 and 7, a second control terminal 53B and a second detection terminal 54B are arranged inside the side wall 81B. The second control terminal 53B and the second detection terminal 54B are each supported by the side wall 81B. As shown in Figures 1 and 3, the second control terminal 53B and the second detection terminal 54B each protrude from the side wall 81B in the thickness direction Z. Each control terminal 53A, 53B, each detection terminal 54A, 54B, the power supply current terminal 55, and the pair of temperature detection terminals 56 are each made of a metal rod, for example, made of Cu (copper). The surface of this metal rod is plated with Sn (tin). Nickel plating may be applied between the surface of the metal rod and the tin plating. Each control terminal 53A, 53B, each detection terminal 54A, 54B, power supply current terminal 55, and the pair of temperature detection terminals 56 are, for example, identical in shape, and in one example are formed in an L-shape having a first portion extending in the vertical direction Y and a second portion extending in the thickness direction Z.

[0019] As shown in Figure 7, a pair of terminal bases 82A and 82B are connected to both ends of a pair of side walls 81A and 81B in the lateral direction X. These pair of side walls 81A and 81B and the pair of terminal bases 82A and 82B form a frame that surrounds the substrate 10, the connecting member 30, and the power semiconductor element 40. The pair of terminal bases 82A and 82B are spaced apart from each other in the lateral direction X. A power terminal block 84 is connected to terminal base 82A, protruding outward from terminal base 82A in the lateral direction X. An output terminal block 85 is connected to terminal base 82B, protruding outward from terminal base 82B in the lateral direction X.

[0020] As shown in Figures 2, 4, and 7, the power terminal block 84 has a first terminal block 84A and a second terminal block 84B. The first terminal block 84A and the second terminal block 84B are aligned in the horizontal direction X and arranged in the vertical direction Y. A portion of the first input terminal 51A is provided on the first terminal block 84A. The first terminal block 84A supports a portion of the first input terminal 51A. A portion of the second input terminal 51B is provided on the second terminal block 84B. The second terminal block 84B supports a portion of the second input terminal 51B. As shown in Figure 7, a nut 84N is provided inside the first terminal block 84A. Also as shown in Figure 7, a nut 84N is provided inside the second terminal block 84B, similar to the first terminal block 84A.

[0021] As shown in Figure 7, in a plan view, the first input terminal 51A and the second input terminal 51B have a symmetrical shape. Each input terminal 51A, 51B has an exposed portion 51a that is exposed to the outside of the power module 1A, a connection portion 51b for electrically connecting to each power semiconductor element 40A, 40B, and a connecting portion 51c that connects the exposed portion 51a and the connection portion 51b. In this embodiment, each input terminal 51A, 51B is configured as a single component in which the exposed portion 51a, the connection portion 51b, and the connecting portion 51c are integrally formed. The exposed portion 51a is provided with a through hole 51d that penetrates the exposed portion 51a in the thickness direction Z. In a side view of the first input terminal 51A viewed from the vertical direction Y, the first input terminal 51A is formed in a stepped shape. The exposed portion 51a of the first input terminal 51A is supported by the first terminal block 84A. The exposed portion 51a of the second input terminal 51B is supported by the second terminal block 84B. As shown in Figure 7, the through hole 51d of the exposed portion 51a of the first input terminal 51A is provided to correspond to the nut 84N of the first terminal block 84A. The through hole 51d of the exposed portion 51a of the second input terminal 51B is provided to correspond to the nut 84N of the second terminal block 84B. Multiple connection portions 51b are provided and are spaced apart in the vertical direction Y.

[0022] As shown in Figures 2, 5, and 7, the output terminal block 85 has a first terminal block 85A and a second terminal block 85B. The first terminal block 85A and the second terminal block 85B are aligned in the horizontal direction X and arranged in the vertical direction Y. A portion of the first output terminal 52A is provided on the first terminal block 85A. The first terminal block 85A supports a portion of the first output terminal 52A. A portion of the second output terminal 52B is provided on the second terminal block 85B. The second terminal block 85B supports a portion of the second output terminal 52B. As shown in Figure 7, a nut 85N is provided inside the first terminal block 85A. Also as shown in Figure 7, a nut 85N is provided inside the second terminal block 85B, similar to the first terminal block 85A.

[0023] As shown in Figure 7, in a plan view, the first output terminal 52A and the second output terminal 52B have a symmetrical shape. In this embodiment, each output terminal 52A and 52B has the same shape as each input terminal 51A and 51B. Each output terminal 52A and 52B has an exposed portion 52a that is exposed to the outside of the power module 1A, a connection portion 52b for electrically connecting to each power semiconductor element 40A and 40B, and a connecting portion 52c that connects the exposed portion 52a and the connection portion 52b. In this embodiment, each output terminal 52A and 52B is configured as a single component in which the exposed portion 52a, the connection portion 52b, and the connecting portion 52c are integrally formed. The exposed portion 52a is provided with a through hole 52d that penetrates the exposed portion 52a in the thickness direction Z. In a side view of the first output terminal 52A viewed from the vertical direction Y, the first output terminal 52A is formed in a stepped shape. The exposed portion 52a of the first output terminal 52A is supported by the first terminal block 85A. The exposed portion 52a of the second output terminal 52B is supported by the second terminal block 85B. As shown in Figure 7, the through hole 52d of the exposed portion 52a of the first output terminal 52A is provided to correspond to the nut 85N of the first terminal block 85A. The through hole 52d of the exposed portion 52a of the second output terminal 52B is provided to correspond to the nut 85N of the second terminal block 85B. Multiple connection portions 52b are provided and are spaced apart in the vertical direction Y.

[0024] As shown in Figures 3 and 6, the heat sink 70 is attached to the case 80, thereby closing one end of an opening in the case 80 in the thickness direction Z. The heat sink 70 is made of, for example, Cu or a Cu alloy. In this case, the surface of the metal plate may be nickel-plated. As shown in Figure 9, the heat sink 70 has a heat dissipation main surface 70s and a heat dissipation back surface 70r facing opposite directions in the thickness direction Z. The heat dissipation back surface 70r is exposed to the outside of the power module 1A. As shown in Figure 6, in a plan view, support holes 71 are provided at the four corners of the heat sink 70, penetrating the heat sink 70 in the thickness direction Z.

[0025] As shown in Figures 2 and 7, the multiple mounting portions 83 are provided at the four corners of the case 80 in a plan view. Each mounting portion 83 is provided with a mounting hole 83a that penetrates the mounting portion 83 in the thickness direction Z. Viewed from the thickness direction Z, the multiple mounting portions 83 are arranged to overlap with the four corners of the heat sink 70. Therefore, the multiple mounting holes 83a correspond to the support holes 71 of the heat sink 70 (see Figure 6). The heat sink 70 is supported by the case 80 by fitting fastening members such as pins into the multiple mounting holes 83a and the support holes 71.

[0026] As shown in Figures 1 and 2, the case 80 includes a top plate 86. The top plate 86 covers the internal area of ​​the power module 1A, which is formed by the heat sink 70, a pair of side walls 81A and 81B, and a pair of terminal bases 82A and 82B. The top plate 86 is supported by the pair of side walls 81A and 81B, spaced apart from the heat sink 70 and the substrate 10 in the thickness direction Z.

[0027] Next, the detailed configuration of the internal region of power module 1A will be described with reference to Figures 7 and 9 to 19. Note that the dashed lines in Figures 15, 16, 18, and 19 are auxiliary lines to clarify the positional relationships of each control layer and each drive layer.

[0028] As shown in Figures 7 and 10, the internal region of the power module 1A is an open region surrounded by a pair of side walls 81A, 81B and a pair of terminal bases 82A, 82B of the case 80, with one end of the open region in the thickness direction Z being closed by the heat sink 70. The substrate 10, connecting member 30, power semiconductor element 40, and sealing resin 60 (not shown in Figure 7) are housed in this internal region.

[0029] As shown in Figure 10, the sealing resin 60 is made of an electrically insulating resin material and fills the internal region sealed by the heat sink 70 and the top plate 86. The sealing resin 60 seals the substrate 10, the connecting member 30, and the power semiconductor element 40.

[0030] As shown in Figure 9, the substrate 10 is joined to the heat dissipation main surface 70s of the heat sink 70 by a bonding material such as Ag (silver) paste or solder. Note that the bonding material is not limited to conductive bonding materials such as Ag paste or solder, but an electrically insulating bonding material may also be used. As shown in Figure 7, the substrate 10 has a first substrate 11 and a second substrate 12. The first substrate 11 and the second substrate 12 are aligned in the vertical direction Y and spaced apart in the horizontal direction X. The first substrate 11 is located on the side of each input terminal 51A, 51B in the internal region in the horizontal direction X, and the second substrate 12 is located on the side of each output terminal 52A, 52B in the internal region in the horizontal direction X. As shown in Figure 10, the first substrate 11 has a first substrate main surface 11s and a first substrate back surface 11r that face opposite each other in the thickness direction Z. The second substrate 12 has a second substrate main surface 12s and a second substrate back surface 12r that face opposite each other in the thickness direction Z.

[0031] Each substrate 11, 12 is an electrically insulating member on which a mounting layer for mounting a power semiconductor element 40 and a conductive layer for electrically connecting to the power semiconductor element 40 are arranged. The constituent material of each substrate 11, 12 is a ceramic with excellent thermal conductivity. For example, AlN (aluminum nitride) can be used as such a ceramic. Each substrate 11, 12 can be a DBC (Direct Bonding Copper) substrate in which Cu foil is bonded to the main surfaces 11s, 12s and the back surfaces 11r, 12r of each substrate. By using a DBC substrate, the mounting layer and conductive layer can be easily formed by patterning the copper foil bonded to the main surfaces 11s, 12s of each substrate. In addition, the copper foil bonded to the back surfaces 11r, 12r of each substrate can be used as a heat transfer layer.

[0032] As shown in Figures 7 and 11, the shape of the first substrate 11 in plan view is approximately rectangular, with the horizontal direction X being the longer side and the vertical direction Y being the shorter side. As shown in Figure 11, the first substrate 11 mainly has a first substrate side 11a, a second substrate side 11b, a third substrate side 11c, and a fourth substrate side 11d. The first substrate side 11a and the second substrate side 11b are surfaces facing opposite directions in the vertical direction Y and extend along the horizontal direction X. The first substrate side 11a is the side of the first substrate 11 on the side wall 81A side, and the second substrate side 11b is the side of the first substrate 11 on the side wall 81B side. The third substrate side 11c and the fourth substrate side 11d are surfaces facing opposite directions in the horizontal direction X and extend along the vertical direction Y. The third board side 11c is the side of the first board 11 facing the terminal base 82A, and the fourth board side 11d is the side of the first board 11 facing the terminal base 82B (see Figure 7).

[0033] As shown in Figure 11, the first substrate main surface 11s of the first substrate 11 has a first mounting layer 13A, a second mounting layer 14A, a conductive layer 15A, a first control layer 21, a second control layer 25, a first drive layer 23, a second drive layer 27, and a thermistor mounting layer 16 arranged on it.

[0034] The first mounting layer 13A, the second mounting layer 14A, and the conductive layer 15A are spaced apart in the vertical direction Y. The first mounting layer 13A is positioned on the first substrate side surface 11a side of the first substrate 11 closer to the second mounting layer 14A and the conductive layer 15A in the vertical direction Y. The conductive layer 15A is positioned on the second substrate side surface 11b side of the first substrate 11 closer to the first mounting layer 13A and the second mounting layer 14A in the vertical direction Y. The second mounting layer 14A is positioned between the first mounting layer 13A and the conductive layer 15A in the vertical direction Y.

[0035] The first mounting layer 13A has a strip-shaped main mounting portion 13a extending in the lateral direction X, a terminal-side connection portion 13b formed at the end of the main mounting portion 13a in the lateral direction X on the third substrate side surface 11c side of the first substrate 11, and an interlayer connection portion 13c formed at the end of the main mounting portion 13a in the lateral direction X on the fourth substrate side surface 11d side of the first substrate 11. In this embodiment, the first mounting layer 13A is a single member in which the main mounting portion 13a, the terminal-side connection portion 13b, and the interlayer connection portion 13c are integrally formed. The terminal-side connection portion 13b extends in the vertical direction Y and protrudes from both sides of the main mounting portion 13a in the vertical direction Y. The terminal-side connection portion 13b is positioned adjacent to the terminal base 82A (see Figure 7), i.e., the first input terminal 51A, in the lateral direction X. Multiple connection portions 51b of the first input terminal 51A are connected to the terminal-side connection portion 13b. The width dimension of the main mounting section 13a (the vertical Y dimension of the main mounting section 13a) is greater than the width dimension of the first control layer 21 (the dimension in the direction perpendicular to the direction in which the first control layer 21 extends in a plan view) and greater than the width dimension of the first drive layer 23 (the vertical Y dimension of the first drive layer 23). The width dimension of the main mounting section 13a is at least twice the width dimension of the first control layer 21 and the width dimension of the first drive layer 23, preferably at least four times. In this embodiment, the width dimension of the main mounting section 13a is about eight times the width dimension of the first control layer 21 and the width dimension of the first drive layer 23. The width dimension of the inter-layer connection section 13c (the vertical Y dimension of the inter-layer connection section 13c) is greater than the width dimension of the main mounting section 13a (the vertical Y dimension of the main mounting section 13a). The edge of the interlayer connection portion 13c on the side surface 11a of the first substrate 11 in the vertical direction Y is aligned in the vertical direction Y with the edge of the main mounting portion 13a on the side surface 11a of the first substrate 11 in the vertical direction Y. For this reason, the interlayer connection portion 13c protrudes from the main mounting portion 13a towards the side surface 11b of the first substrate 11.

[0036] The conductive layer 15A has a strip-shaped main conductive portion 15a extending in the lateral direction X, a terminal-side connection portion 15b formed at the end of the main conductive portion 15a in the lateral direction X on the third substrate side surface 11c side of the first substrate 11, and an interlayer connection portion 15c formed at the end of the main conductive portion 15a in the lateral direction X on the fourth substrate side surface 11d side of the first substrate 11. In this embodiment, the conductive layer 15A is a single member in which the main conductive portion 15a, the terminal-side connection portion 15b, and the interlayer connection portion 15c are integrally formed. The terminal-side connection portion 15b extends in the vertical direction Y and protrudes from both sides of the main conductive portion 15a in the vertical direction Y. The width dimension of the main conductive portion 15a (the dimension of the main conductive portion 15a in the vertical direction Y) is equal to the width dimension of the main mounting portion 13a of the first mounting layer 13A (the dimension of the main mounting portion 13a in the vertical direction Y). The terminal-side connection portion 15b is positioned adjacent to the terminal-side connection portion 13b of the first mounting layer 13A in the vertical direction Y. Furthermore, the terminal-side connection portion 15b is positioned adjacent to the terminal base 82A, i.e., the second input terminal 51B, in the horizontal direction X. Multiple connection portions 51b of the second input terminal 51B are connected to the terminal-side connection portion 15b. The width dimension of the interlayer connection portion 15c (the vertical direction Y dimension of the interlayer connection portion 15c) is greater than the width dimension of the main conductive portion 15a (the vertical direction Y dimension of the main conductive portion 15a). The edge of the interlayer connection portion 15c on the side surface 11b of the first substrate 11 in the vertical direction Y aligns with the edge of the main conductive portion 15a on the side surface 11b of the first substrate 11 in the vertical direction Y aligns with the vertical direction Y edge of the main conductive portion 15a on the side surface 11b of the first substrate 11 in the vertical direction Y . Therefore, the interlayer connection portion 15c protrudes from the main conductive portion 15a towards the first substrate side surface 11a of the first substrate 11.

[0037] The second mounting layer 14A is positioned on the fourth substrate side 11d side of the first substrate 11 in the lateral direction X, relative to the terminal-side connection portion 13b of the first mounting layer 13A and the terminal-side connection portion 15b of the conductive layer 15A. In the vertical direction Y, the second mounting layer 14A is positioned between the main mounting portion 13a of the first mounting layer 13A and the main conductive portion 15a of the conductive layer 15A. In this embodiment, the second mounting layer 14A is positioned in the central part of the first substrate 11 in the vertical direction Y. In this embodiment, the edge of the second mounting layer 14A on the fourth substrate side 11d side of the first substrate 11 in the lateral direction X, the edge of the main mounting portion 13a of the first mounting layer 13A on the fourth substrate side 11d side in the lateral direction X, and the edge of the main conductive portion 15a of the conductive layer 15A on the fourth substrate side 11d side in the lateral direction X are aligned in the vertical direction Y. The second mounting layer 14A has a strip-shaped main mounting portion 14a extending in the lateral direction X, and an interlayer connection portion 14b formed at the end of the main mounting portion 14a in the lateral direction X on the fourth substrate side surface 11d side of the first substrate 11. In this embodiment, the second mounting layer 14A is a single member in which the main mounting portion 14a and the interlayer connection portion 14b are integrally formed. The width dimension of the main mounting portion 14a of the second mounting layer 14A (the dimension of the main mounting portion 14a in the vertical direction Y) is larger than the width dimension of the main mounting portion 13a of the first mounting layer 13A (the dimension of the main mounting portion 13a in the vertical direction Y) and the width dimension of the main conductive portion 15a of the conductive layer 15A (the dimension of the main conductive portion 15a in the vertical direction Y). The width dimension of the interlayer connection portion 14b (the dimension of the interlayer connection portion 14b in the vertical direction Y) is smaller than the width dimension of the main mounting portion 14a. The interlayer connection portion 14b is formed to be recessed in the vertical direction Y from both ends of the main mounting portion 14a in the vertical direction Y.

[0038] The first control layer 21 and the first drive layer 23 are positioned in the vertical direction Y such that they are closer to the first substrate side 11a of the first substrate 11 than to the main mounting portion 13a of the first mounting layer 13A. Furthermore, the first control layer 21 and the first drive layer 23 are positioned in the horizontal direction X such that they are closer to the fourth substrate side 11d of the first substrate 11 than to the terminal side connection portion 13b of the first mounting layer 13A. The first control layer 21 and the first drive layer 23 are spaced apart in the vertical direction Y. The first drive layer 23 is positioned closer to the main mounting portion 13a of the first mounting layer 13A than to the first control layer 21. In other words, the first control layer 21 is positioned closer to the first substrate side 11a of the first substrate 11 than to the first drive layer 23. Viewed from the vertical direction Y, the first control layer 21 overlaps with the first drive layer 23.

[0039] The second control layer 25 and the second drive layer 27 are positioned in the vertical direction Y such that they are closer to the second substrate side surface 11b of the first substrate 11 than to the main conductive portion 15a of the conductive layer 15A. Furthermore, the second control layer 25 and the second drive layer 27 are positioned in the horizontal direction X such that they are closer to the fourth substrate side surface 11d of the first substrate 11 than to the terminal-side connection portion 15b of the conductive layer 15A. The second control layer 25 and the second drive layer 27 are spaced apart in the vertical direction Y. The second drive layer 27 is positioned closer to the main conductive portion 15a of the conductive layer 15A than to the second control layer 25. In other words, the second control layer 25 is positioned closer to the second substrate side surface 11b of the first substrate 11 than to the second drive layer 27. Viewed from the vertical direction Y, the second drive layer 27 overlaps with the second control layer 25. Viewed from the vertical direction Y, the second drive layer 27 overlaps with the main conductive portion 15a of the conductive layer 15A. In this manner, the first mounting layer 13A, the second mounting layer 14A, and the conductive layer 15A are sandwiched in the vertical direction Y by the first control layer 21 and the first drive layer 23, and the second control layer 25 and the second drive layer 27.

[0040] The thermistor mounting layer 16 is positioned on the side surface 11a of the first substrate 11, rather than on the main mounting portion 13a of the first mounting layer 13A, in the vertical direction Y. Furthermore, the thermistor mounting layer 16 is positioned so as to overlap the terminal-side connection portion 13b of the first mounting layer 13A, the first control layer 21, and the first drive layer 23 when viewed from the horizontal direction X. Additionally, the thermistor mounting layer 16 is positioned between the first control layer 21 and the first drive layer 23 and the terminal-side connection portion 13b of the first mounting layer 13A in the horizontal direction X.

[0041] A thermistor 17, which is a temperature sensing element, can be mounted on the thermistor mounting layer 16. In this embodiment, the thermistor 17 is mounted on the thermistor mounting layer 16. The thermistor mounting layer 16 has a pair of regions that are spaced apart from each other in the vertical direction Y. The positive electrode of the thermistor 17 can be electrically connected to one region, and the negative electrode of the thermistor 17 can be electrically connected to the other region.

[0042] As shown in Figures 7 and 12, the shape of the second substrate 12 in plan view is substantially rectangular, with the horizontal direction X being the longer side and the vertical direction Y being the shorter side. In this embodiment, the shape of the second substrate 12 is symmetrical with respect to the first substrate 11 around a center line along the vertical direction Y, and the dimensions of the second substrate 12 in the horizontal direction X, vertical direction Y, and thickness direction Z are equal to the dimensions of the first substrate 11 in the horizontal direction X, vertical direction Y, and thickness direction Z. The second substrate 12 mainly has a first substrate side surface 12a, a second substrate side surface 12b, a third substrate side surface 12c, and a fourth substrate side surface 12d. The first substrate side surface 12a and the second substrate side surface 12b are surfaces facing opposite directions in the vertical direction Y and extend along the horizontal direction X. The first substrate side surface 12a is the side surface of the second substrate 12 on the side wall 81A side, and the second substrate side surface 12b is the side surface of the second substrate 12 on the side wall 81B side. The third substrate side surface 12c and the fourth substrate side surface 12d are surfaces facing opposite directions in the lateral direction X and extending along the vertical direction Y. The third substrate side surface 12c is the side of the second substrate 12 facing the terminal base 82A (see Figure 7), and the fourth substrate side surface 12d is the side of the second substrate 12 facing the terminal base 82B (see Figure 7). Note that the shape of the second substrate 12 does not have to be symmetrical to the first substrate 11, and the size of the second substrate 12 may differ from the size of the first substrate 11.

[0043] As shown in Figure 12, the second substrate main surface 12s of the second substrate 12 has a first mounting layer 13B, a second mounting layer 14B, a conductive layer 15B, a first control layer 22, a second control layer 26, a first drive layer 24, and a second drive layer 28 arranged on it.

[0044] The first mounting layer 13B, the second mounting layer 14B, and the conductive layer 15B are spaced apart in the vertical direction Y. The first mounting layer 13B is positioned on the side surface 12a of the second substrate 12 of the second substrate 12, more so than the second mounting layer 14B and the conductive layer 15B, in the vertical direction Y. The conductive layer 15B is positioned on the side surface 12b of the second substrate 12 of the second substrate 12, more so than the first mounting layer 13B and the second mounting layer 14B, in the vertical direction Y. The second mounting layer 14B is positioned between the first mounting layer 13B and the conductive layer 15B, in the vertical direction Y.

[0045] The first mounting layer 13B has a strip-shaped main mounting portion 13d extending in the lateral direction X, a terminal-side connection portion 13e formed at the end of the main mounting portion 13d in the lateral direction X on the fourth substrate side surface 12d side of the second substrate 12, and an interlayer connection portion 13f formed at the end of the main mounting portion 13d in the lateral direction X on the third substrate side surface 12c side of the second substrate 12. In this embodiment, the first mounting layer 13B is a single member in which the main mounting portion 13d, the terminal-side connection portion 13e, and the interlayer connection portion 13f are integrally formed. The terminal-side connection portion 13e extends in the vertical direction Y and protrudes in the vertical direction Y from the main mounting portion 13d toward the first substrate side surface 12a side of the second substrate 12. The width dimension of the terminal-side connection portion 13e (the dimension of the terminal-side connection portion 13e in the lateral direction X) is smaller than the width dimension of the main mounting portion 13d (the dimension of the main mounting portion 13d in the vertical direction Y). The width dimension of the terminal-side connection portion 13e is, for example, equal to the width dimension of the first control layer 22 (the vertical Y dimension of the first control layer 22). The width dimension of the main mounting portion 13d (the vertical Y dimension of the main mounting portion 13d) is greater than the width dimension of the first control layer 22 (the vertical Y dimension of the first control layer 22) and greater than the width dimension of the first drive layer 24 (the dimension in the direction perpendicular to the direction in which the first drive layer 24 extends in a plan view). The width dimension of the main mounting portion 13d is at least twice the width dimension of the first control layer 22 and the width dimension of the first drive layer 24, preferably at least four times. In this embodiment, the width dimension of the main mounting portion 13d is about eight times the width dimension of the first control layer 22 and the width dimension of the first drive layer 24. In this embodiment, the width dimension of the main mounting portion 13d is equal to the width dimension of the main mounting portion 13a of the first mounting layer 13A (see Figure 11). The width dimension of the interlayer connection portion 13f (the vertical dimension Y of the interlayer connection portion 13f) is larger than the width dimension of the main mounting portion 13d (the vertical dimension Y of the main mounting portion 13d). The edge of the interlayer connection portion 13f on the side surface 12a of the second substrate 12 in the vertical direction Y is aligned in the vertical direction Y with the edge of the main mounting portion 13d on the side surface 12a of the second substrate 12 in the vertical direction Y. For this reason, the interlayer connection portion 13f protrudes from the main mounting portion 13d towards the side surface 12b of the second substrate 12.

[0046] The conductive layer 15B has a strip-shaped main conductive portion 15d extending in the lateral direction X, and an interlayer connection portion 15e formed at the end of the main conductive portion 15d in the lateral direction X on the side surface 12c of the second substrate 12. The width dimension of the main conductive portion 15d of the conductive layer 15B (the dimension of the main conductive portion 15d in the vertical direction Y) is equal to the width dimension of the main mounting portion 13d of the first mounting layer 13B (the dimension of the main mounting portion 13d in the vertical direction Y). The width dimension of the interlayer connection portion 15e (the dimension of the interlayer connection portion 15e in the vertical direction Y) is greater than the width dimension of the main conductive portion 15d (the dimension of the main conductive portion 15d in the vertical direction Y). The edge of the interlayer connection portion 15e on the side surface 12b of the second substrate 12 in the vertical direction Y is aligned in the vertical direction Y with the edge of the main conductive portion 15d on the side surface 12b of the second substrate 12 in the vertical direction Y. Therefore, the interlayer connection portion 15e protrudes from the main conductive portion 15d toward the first substrate side surface 12a of the second substrate 12.

[0047] The second mounting layer 14B has a strip-shaped main mounting portion 14c extending in the lateral direction X, a terminal-side connection portion 14d formed at the end of the main mounting portion 14c in the lateral direction X on the fourth substrate side surface 12d side of the second substrate 12, and an interlayer connection portion 14e formed at the end of the main mounting portion 14c in the lateral direction X on the third substrate side surface 12c side of the second substrate 12. In this embodiment, the second mounting layer 14B is a single member in which the main mounting portion 14c, the terminal-side connection portion 14d, and the interlayer connection portion 14e are integrally formed. The main mounting portion 14c is located between the main mounting portion 13d of the first mounting layer 13B and the conductive layer 15B in the vertical direction Y. In this embodiment, the main mounting portion 14c is located in the central part of the second substrate 12 in the vertical direction Y. The width dimension of the main mounting portion 14c (the vertical dimension Y of the main mounting portion 14c) is larger than the width dimension of the main mounting portion 13d of the first mounting layer 13B and the width dimension of the main conductive portion 15d of the conductive layer 15B. The edge of the second substrate 12 on the third substrate side surface 12c side of the second substrate 12 in the second mounting layer 14B in the horizontal direction X, the edge of the second substrate 12 on the third substrate side surface 12c side of the first mounting layer 13B on the third substrate side surface 12c side of the second substrate 12 in the horizontal direction X, and the edge of the conductive layer 15B on the third substrate side surface 12c side of the second substrate 12 in the horizontal direction X are aligned with each other in the vertical direction Y. The terminal side connection portion 14d extends in the vertical direction Y and protrudes from both sides of the main mounting portion 14c in the vertical direction Y. Thus, the shape of the second mounting layer 14B in plan view is T-shaped. Furthermore, the terminal-side connection portion 14d is positioned on the fourth substrate side surface 12d side of the second substrate 12, rather than on the first mounting layer 13B and the conductive layer 15B. The terminal-side connection portion 14d is positioned adjacent to the terminal base 82B, i.e., the first output terminal 52A and the second output terminal 52B, in the lateral direction X. Multiple connection portions 52b of each output terminal 52A, 52B are connected to the terminal-side connection portion 14d. The width dimension of the interlayer connection portion 14e (the vertical dimension of the interlayer connection portion 14e in the vertical direction Y) is smaller than the width dimension of the main mounting portion 14c. The interlayer connection portion 14e is formed to be recessed in the vertical direction Y from both ends of the main mounting portion 14c in the vertical direction Y.

[0048] The first control layer 22 and the first drive layer 24 are positioned in the vertical direction Y on the side 12a of the second substrate 12, rather than on the main mounting portion 13d of the first mounting layer 13B. Also, in the horizontal direction X, the first control layer 22 and the first drive layer 24 are positioned on the side 12c of the second substrate 12, rather than on the terminal-side connection portion 13e of the first mounting layer 13B. The first control layer 22 and the first drive layer 24 are spaced apart in the vertical direction Y. The first drive layer 24 is positioned closer to the main mounting portion 13d of the first mounting layer 13B than the first control layer 22. In other words, the first control layer 22 is positioned closer to the side 12a of the second substrate 12 than the first drive layer 24. Viewed from the vertical direction Y, the first drive layer 24 overlaps with the first control layer 22. Viewed from the vertical direction Y, the first drive layer 24 overlaps with the main mounting portion 13d of the first mounting layer 13B. Viewed from the horizontal direction X, the first control layer 22 and the first drive layer 24 overlap with the terminal-side connection portion 13e of the first mounting layer 13B and the terminal-side connection portion 14d of the second mounting layer 14B, respectively.

[0049] The second control layer 26 and the second drive layer 28 are positioned in the vertical direction Y on the side surface 12b of the second substrate 12, relative to the conductive layer 15B. Furthermore, the second control layer 26 and the second drive layer 28 are positioned in the horizontal direction X on the side surface 12c of the second substrate 12, relative to the terminal connection portion 14d of the second mounting layer 14B. The second control layer 26 and the second drive layer 28 are spaced apart in the vertical direction Y. The second drive layer 28 is positioned closer to the conductive layer 15B than the second control layer 26. In other words, the second control layer 26 is positioned closer to the side surface 12b of the second substrate 12 than the second drive layer 28. Viewed from the vertical direction Y, the second drive layer 28 overlaps with the second control layer 26. Viewed from the vertical direction Y, the second control layer 26 overlaps with the conductive layer 15B. In this manner, the first mounting layer 13B, the second mounting layer 14B, and the conductive layer 15B are sandwiched in the vertical direction Y by the first control layer 22 and the first drive layer 24, and the second control layer 26 and the second drive layer 28.

[0050] As shown in Figure 7, the main mounting portion 13a and interlayer connection portion 13c of the first mounting layer 13A and the main mounting portion 13d and interlayer connection portion 13f of the first mounting layer 13B are aligned in the vertical direction Y and spaced apart in the horizontal direction X. The main mounting portion 14a and interlayer connection portion 14b of the second mounting layer 14A and the main mounting portion 14c and interlayer connection portion 14e of the second mounting layer 14B are aligned in the vertical direction Y and spaced apart in the horizontal direction X. The main conductive portion 15a and interlayer connection portion 15c of the conductive layer 15A and the main conductive portion 15d and interlayer connection portion 15e of the conductive layer 15B are aligned in the vertical direction Y and spaced apart in the horizontal direction X.

[0051] As shown in Figure 13, the interlayer connection portion 13c of the first mounting layer 13A and the interlayer connection portion 13f of the first mounting layer 13B are connected by a plate-shaped connecting member 90A, which is an example of a first mounting layer connecting member. The interlayer connection portion 14b of the second mounting layer 14A and the interlayer connection portion 14e of the second mounting layer 14B are connected by a plate-shaped connecting member 90B, which is an example of a second mounting layer connecting member. The interlayer connection portion 15c of the conductive layer 15A and the interlayer connection portion 15e of the conductive layer 15B are connected by a plate-shaped connecting member 90C.

[0052] As shown in Figure 13, in plan view, the shapes of the connecting members 90A to 90C are identical. In one example, the connecting members 90A to 90C are each made of Cu or a Cu alloy. Each of the connecting members 90A to 90C has a pair of connecting parts 91 extending in the lateral direction X and a connecting part 92 that connects the pair of connecting parts 91 in the vertical direction Y. In this embodiment, each of the connecting members 90A to 90C is made up of a single member in which the pair of connecting parts 91 and the connecting part 92 are integrally formed. The pair of connecting parts 91 are spaced apart from each other in the vertical direction Y and each extends in the lateral direction X. The connecting part 92 is provided to connect the central parts of the pair of connecting parts 91 in the lateral direction X. Therefore, in plan view, the shapes of the connecting members 90A to 90C are each H-shaped.

[0053] The pair of connecting portions 91 of the connecting member 90A are connected to the interlayer connection portion 13c of the first mounting layer 13A and the interlayer connection portion 13f of the first mounting layer 13B. The connecting portion 92 of the connecting member 90A is located between the interlayer connection portions 13c and 13f in the lateral direction X. In this way, the first mounting layer 13A and the first mounting layer 13B are electrically connected by the connecting member 90A.

[0054] The pair of connecting portions 91 of the connecting member 90B are connected to the interlayer connection portion 14b of the second mounting layer 14A and the interlayer connection portion 14e of the second mounting layer 14B. The connecting portion 92 of the connecting member 90B is located between the interlayer connection portions 14b and 14e in the lateral direction X. In this way, the second mounting layer 14A and the second mounting layer 14B are electrically connected by the connecting member 90B.

[0055] The pair of connecting portions 91 of the connecting member 90C are connected to the interlayer connection portion 15c of the conductive layer 15A and the interlayer connection portion 15e of the conductive layer 15B. The connecting portion 92 of the connecting member 90C is located between the interlayer connection portions 15c and 15e in the lateral direction X. In this way, the conductive layer 15A and the conductive layer 15B are electrically connected by the connecting member 90C.

[0056] As shown in Figure 11, multiple (five in this embodiment) first power semiconductor elements 40A are arranged as power semiconductor elements 40 in the main mounting portion 13a of the first mounting layer 13A. The multiple first power semiconductor elements 40A are aligned in the vertical direction Y and spaced apart from each other in the horizontal direction X. Therefore, the horizontal direction X, which is the arrangement direction of the multiple first power semiconductor elements 40A, is the first direction described in the claims. In this embodiment, the vertical direction Y, which is perpendicular to the horizontal direction X when viewed from the thickness direction Z, is the second direction that intersects the first direction when viewed from the thickness direction. Each of the multiple first power semiconductor elements 40A is arranged at the end of the main mounting portion 13a on the side of the second mounting layer 14A in the vertical direction Y. In the horizontal direction X, the multiple first power semiconductor elements 40A are not arranged in the terminal side connection portion 13b or the interlayer connection portion 13c.

[0057] As shown in Figures 9 and 10, each first power semiconductor element 40A has a main element surface 40s and a back surface 40r facing opposite directions in the thickness direction Z. Here, the main element surface 40s of the first power semiconductor element 40A is the first main element surface described in the claims, and the back surface 40r of the first power semiconductor element 40A is the first back surface described in the claims. Each first power semiconductor element 40A is placed on the first mounting layer 13A such that its back surface 40r faces the main mounting portion 13a. The back surface 40r is bonded to the main mounting portion 13a by a conductive bonding material. An example of a conductive bonding material is Ag paste or solder. A drain electrode 41 (see Figure 8), which is an example of a first drive electrode, is formed on the back surface 40r. Therefore, the drain electrode 41 is electrically connected to the first mounting layer 13A. Since the first mounting layer 13A is electrically connected to the first input terminal 51A, the drain electrode 41 is electrically connected to the first input terminal 51A via the first mounting layer 13A.

[0058] As shown in Figure 11, a source electrode 42, which is an example of a second drive electrode, and a gate electrode 43, which is an example of a control electrode, are formed on the main surface 40s of the element. The source electrode 42 includes a main source electrode 42A, a first source electrode 42B, and a second source electrode 42C.

[0059] The main source electrode 42A is formed on the portion of the main surface 40s of the element in the vertical direction Y, on the side of the second mounting layer 14A. In plan view, the shape of the main source electrode 42A is rectangular, with the horizontal direction X being the longer side and the vertical direction Y being the shorter side, and it occupies more than half of the area of ​​the main surface 40s of the element. A first element connecting member 31A is connected to the main source electrode 42A as a connecting member 30. Therefore, in plan view, the multiple first element connecting members 31A are arranged spaced apart from each other in the horizontal direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. The first element connecting member 31A is formed in a strip shape extending in the vertical direction Y in plan view. The first element connecting member 31A is made of, for example, a thin plate of Cu or a Cu alloy, or a thin plate of Al (aluminum) or an Al alloy. The first element connecting member 31A is also connected to the second mounting layer 14A. More specifically, the first element connecting member 31A is connected to the end of the second mounting layer 14A on the side of the first mounting layer 13A in the vertical direction Y. In this way, the first element connecting member 31A connects the main source electrode 42A of each first power semiconductor element 40A to the second mounting layer 14A. Therefore, the source electrode 42 (see Figure 8) of each first power semiconductor element 40A is electrically connected to the second mounting layer 14A.

[0060] The first source electrode 42B, the second source electrode 42C, and the gate electrode 43 are each located at the end of the main surface 40s of the element on the side of the first drive layer 23 in the vertical direction Y. The first source electrode 42B, the second source electrode 42C, and the gate electrode 43 are aligned in the vertical direction Y and spaced apart in the horizontal direction X. The gate electrode 43 is located between the first source electrode 42B and the second source electrode 42C in the horizontal direction X. In plan view, the shape of the gate electrode 43 is rectangular. The first source electrode 42B is located on the fourth substrate side 11d side of the first substrate 11 relative to the gate electrode 43, and the second source electrode 42C is located on the third substrate side 11c side of the first substrate 11 relative to the gate electrode 43. In plan view, the shapes of the first source electrode 42B and the second source electrode 42C are the same, and are rectangular in shape with the horizontal direction X being the longer side and the vertical direction Y being the shorter side.

[0061] In each first power semiconductor element 40A, the first source electrode 42B and the first drive layer 23 are connected by a first drive-side connecting member 33A, which is a connecting member 30, and the gate electrode 43 and the first control layer 21 are connected by a first control-side connecting member 32A, which is a connecting member 30.

[0062] Multiple (five in this embodiment) second power semiconductor elements 40B are arranged as power semiconductor elements 40 in the main mounting portion 14a of the second mounting layer 14A. The multiple second power semiconductor elements 40B are aligned in the vertical direction Y and spaced apart from each other in the horizontal direction X (first direction). Each of the multiple second power semiconductor elements 40B is located at the end of the main mounting portion 14a on the conductive layer 15A side in the vertical direction Y. In the horizontal direction X, the multiple second power semiconductor elements 40B are not located in the interlayer connection portion 14b.

[0063] Since the configuration of each second power semiconductor element 40B is the same as that of the first power semiconductor element 40A, common components are denoted by the same reference numerals and their descriptions are omitted. Furthermore, the junction structure between each second power semiconductor element 40B and the main mounting portion 14a of the second mounting layer 14A is the same as the junction structure between each first power semiconductor element 40A and the main mounting portion 13a of the first mounting layer 13A. For this reason, the drain electrode 41 (see Figure 8) of each second power semiconductor element 40B is electrically connected to the second mounting layer 14A. Since the second mounting layer 14A is connected to each output terminal 52A, 52B via the connecting member 90B and the second mounting layer 14B, the drain electrode 41 is electrically connected to each output terminal 52A, 52B via the second mounting layers 14A, 14B and the connecting member 90B. Furthermore, since the drain electrode 41 of each second power semiconductor element 40B is electrically connected to the second mounting layer 14A, the drain electrode 41 is electrically connected to the source electrode 42 of each first power semiconductor element 40A.

[0064] A second element connecting member 31B is connected to the main source electrode 42A of each second power semiconductor element 40B as a connecting member 30. Therefore, in a plan view, the multiple second element connecting members 31B are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple second power semiconductor elements 40B. The second element connecting member 31B is formed in a strip shape extending in the vertical direction Y in a plan view. The second element connecting member 31B is made of, for example, a thin plate of Cu or a Cu alloy. The second element connecting member 31B is also connected to the conductive layer 15A. More specifically, the second element connecting member 31B is connected to the end of the main conductive portion 15a of the conductive layer 15A on the second mounting layer 14A side in the vertical direction Y. In this way, the source electrode 42 (see Figure 8) of each second power semiconductor element 40B is electrically connected to the conductive layer 15A. Since the conductive layer 15A is electrically connected to the second input terminal 51B, the source electrode 42 of each second power semiconductor element 40B is electrically connected to the second input terminal 51B.

[0065] In each second power semiconductor element 40B, the first source electrode 42B and the second drive layer 27 are connected by a second drive-side connecting member 33B, which serves as a connecting member 30, and the gate electrode 43 and the second control layer 25 are connected by a second control-side connecting member 32B, which also serves as a connecting member 30.

[0066] As shown in Figure 12, multiple (five in this embodiment) first power semiconductor elements 40A are arranged as power semiconductor elements 40 in the main mounting portion 13d of the first mounting layer 13B. The multiple first power semiconductor elements 40A are aligned in the vertical direction Y and spaced apart from each other in the horizontal direction X (first direction). Each of the multiple first power semiconductor elements 40A is located at the end of the main mounting portion 13d on the second mounting layer 14B side in the vertical direction Y. In the horizontal direction X, the multiple first power semiconductor elements 40A are not located in the terminal side connection portion 13e or the interlayer connection portion 13f.

[0067] The drain electrode 41 of each first power semiconductor element 40A is electrically connected to the first mounting layer 13B. Since the first mounting layer 13B is electrically connected to the first input terminal 51A via the connecting member 90A and the first mounting layer 13A, the drain electrode 41 of each first power semiconductor element 40A is electrically connected to the first input terminal 51A.

[0068] A first element connecting member 31A is connected to the main source electrode 42A of each first power semiconductor element 40A as a connecting member 30. The first element connecting member 31A is also connected to the second mounting layer 14B. More specifically, the first element connecting member 31A is connected to the end of the second mounting layer 14B on the first mounting layer 13B side in the vertical direction Y. In this way, the source electrode 42 (see Figure 8) of each first power semiconductor element 40A is electrically connected to the second mounting layer 14B.

[0069] In each first power semiconductor element 40A, the first source electrode 42B and the first drive layer 24 are connected by a first drive-side connecting member 33A, which serves as a connecting member 30, and the gate electrode 43 and the first control layer 22 are connected by a first control-side connecting member 32A, which serves as a connecting member 30.

[0070] Multiple (five in this embodiment) second power semiconductor elements 40B are arranged as power semiconductor elements 40 in the main mounting portion 14c of the second mounting layer 14B. The multiple second power semiconductor elements 40B are aligned in the vertical direction Y and spaced apart from each other in the horizontal direction X. Each of the multiple second power semiconductor elements 40B is located at the end of the main mounting portion 14c on the conductive layer 15B side in the vertical direction Y. In the horizontal direction X, the multiple second power semiconductor elements 40B are not located in the terminal side connection portion 14d or the interlayer connection portion 14e.

[0071] The drain electrode 41 of each second power semiconductor element 40B (see Figure 8) is electrically connected to the second mounting layer 14B. Since the second mounting layer 14B is connected to the output terminals 52A and 52B, the drain electrode 41 is electrically connected to the output terminals 52A and 52B via the second mounting layer 14B. Furthermore, since the drain electrode 41 of each second power semiconductor element 40B is electrically connected to the second mounting layer 14B, the drain electrode 41 is electrically connected to the source electrode 42 of each first power semiconductor element 40A.

[0072] A second element connecting member 31B is connected to the main source electrode 42A of each second power semiconductor element 40B as a connecting member 30. The second element connecting member 31B is connected to the conductive layer 15B. More specifically, the second element connecting member 31B is connected to the end of the main conductive portion 15d of the conductive layer 15B in the vertical direction Y that is on the side of the second mounting layer 14B. In this way, the first element connecting member 31A connects the main source electrode 42A of each first power semiconductor element 40A to the second mounting layer 14A. Therefore, the source electrode 42 (see Figure 8) of each second power semiconductor element 40B is electrically connected to the conductive layer 15B. Since the conductive layer 15B is electrically connected to the second input terminal 51B via the connecting member 90C and the conductive layer 15A, the source electrode 42 of each second power semiconductor element 40B is electrically connected to the second input terminal 51B.

[0073] In each second power semiconductor element 40B, the first source electrode 42B and the second drive layer 28 are connected by a second drive-side connecting member 33B, which serves as a connecting member 30, and the gate electrode 43 and the second control layer 26 are connected by a second control-side connecting member 32B, which serves as a connecting member 30.

[0074] Next, the shapes of each control layer 21, 22, 25, 26 and each drive layer 23, 24, 27, 28, as well as the connection structure between each power semiconductor element 40A, 40B and each control terminal 53A, 53B and each detection terminal 54A, 54B, will be described.

[0075] As shown in Figure 14, the side wall 81A of the case 80 is provided so as to be adjacent to the first control layer 21, the first drive layer 24, and the thermistor mounting layer 16 in the vertical direction Y. For this reason, the first control terminal 53A, the first detection terminal 54A, the power supply current terminal 55, and the pair of temperature detection terminals 56 provided on the side wall 81A are each arranged so as to be adjacent to the first control layer 21, the first drive layer 24, and the thermistor mounting layer 16 in the vertical direction Y.

[0076] More specifically, the first control terminal 53A and the first detection terminal 54A are located on the second substrate 12 side of the first control layer 21, and are positioned adjacent to the first drive layer 24 in the vertical direction Y. Viewed from the vertical direction Y, the first control terminal 53A and the first detection terminal 54A are positioned to overlap with the second substrate 12. The first control terminal 53A and the first detection terminal 54A are positioned adjacent to each other in the horizontal direction X. In the horizontal direction X, the first control terminal 53A and the first detection terminal 54A are positioned closer to the third substrate side 12c of the second substrate 12. In the horizontal direction X, the first detection terminal 54A is positioned closer to the terminal base 82B than the first control terminal 53A. The first control terminal 53A and the first control layer 21 are connected by a first control terminal side connecting member 35A, which serves as a connecting member 30. The first detection terminal 54A and the first drive layer 23 are connected by a first detection terminal side connecting member 36A, which serves as a connecting member 30.

[0077] Thus, the gate electrodes 43 of each first power semiconductor element 40A on the first substrate 11 are electrically connected to the first control terminal 53A via the first control-side connecting member 32A, the first control layer 21, and the first control terminal-side connecting member 35A. Since the first control layer 22 is electrically connected to the first control layer 21 via the first control layer connecting member 93A, the gate electrodes 43 of each first power semiconductor element 40A on the second substrate 12 are electrically connected to the first control terminal 53A via the first control-side connecting member 32A, the first control layer 22, the first control layer connecting member 93A, the first control layer 21, and the first control terminal-side connecting member 35A.

[0078] Furthermore, since the first drive layer 23 is electrically connected to the first drive layer 24 via the first drive layer connecting member 94A, the source electrode 42 of each first power semiconductor element 40A on the first substrate 11 is electrically connected to the first detection terminal 54A via the first drive-side connecting member 33A, the first drive layer 24, the first drive layer connecting member 94A, the first drive layer 23, and the first detection terminal-side connecting member 36A. The source electrode 42 of each first power semiconductor element 40A on the second substrate 12 is electrically connected to the first detection terminal 54A via the first drive-side connecting member 33A, the first drive layer 23, and the first detection terminal-side connecting member 36A.

[0079] The power supply current terminal 55 is positioned on the terminal base 82B side of the first control terminal 53A and the first detection terminal 54A in the lateral direction X. The power supply current terminal 55 is positioned adjacent to the terminal-side connection portion 13e of the first mounting layer 13B in the vertical direction Y. The power supply current terminal 55 and the first mounting layer 13B are connected by a power supply current detection-side connection member 34. The power supply current detection-side connection member 34 is connected to the end of the terminal-side connection portion 13e of the first mounting layer 13B on the side surface 12a of the second substrate 12 in the vertical direction Y.

[0080] One of the pair of temperature detection terminals 56 is positioned on the third substrate side 11c side of the first substrate 11, relative to the first control layer 21, while the other is positioned so as to overlap with the end of the first control layer 21 on the third substrate side 11c side of the first substrate 11 when viewed from the vertical direction Y. The pair of temperature detection terminals 56 are positioned adjacent to the thermistor mounting layer 16 in the vertical direction Y. The pair of temperature detection terminals 56 and the thermistor mounting layer 16 are connected by a thermistor-side connecting member 37, which serves as a connecting member 30. The thermistor-side connecting member 37 consists of two wires formed by wire bonding. One wire connects one of the pair of regions of the thermistor mounting layer 16 to one of the pair of temperature detection terminals 56. The remaining wire connects the other of the pair of regions of the thermistor mounting layer 16 to the other of the pair of temperature detection terminals 56. In this way, the thermistor 17 and the temperature detection terminals 56 are electrically connected by the thermistor-side connecting member 37.

[0081] As shown in Figure 15, the first control layer 21 has a first control-side wiring section 21a, a first control-side bypass section 21b, a first control-side connecting section 21c, and a first control-side connection section 21d. In this embodiment, the first control layer 21 is a single member in which the first control-side wiring section 21a, the first control-side bypass section 21b, the first control-side connecting section 21c, and the first control-side connection section 21d are integrally formed. The first control layer 21 is made of, for example, copper foil. In plan view, the shapes of the first control-side wiring section 21a, the first control-side bypass section 21b, and the first control-side connecting section 21c are narrow strips.

[0082] The first control-side wiring section 21a extends along the lateral direction X. In the lateral direction X, the end portion 21e of the first control-side wiring section 21a on the fourth substrate side surface 11d of the first substrate 11 is located on the fourth substrate side surface 11d side of the first substrate 11 than the first power semiconductor element 40Aa that is closest to the fourth substrate side surface 11d among the plurality of first power semiconductor elements 40A. The end portion 21e overlaps with the interlayer connection portion 13c of the first mounting layer 13A when viewed from the vertical direction Y. When viewed from the vertical direction Y, the first control-side wiring section 21a extends in the lateral direction X such that it overlaps with the four first power semiconductor elements 40A, excluding the first power semiconductor element 40Ab that is closest to the third substrate side surface 11c among the plurality of first power semiconductor elements 40A.

[0083] The first control-side wiring section 21a is connected to the first control-side connecting member 32A, which is connected to each of the multiple first power semiconductor elements 40A. The multiple first control-side connecting members 32A are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. The first control-side connecting member 32A connected to the first power semiconductor elements 40A other than the first power semiconductor element 40Ab extends along the vertical direction Y in a plan view. The first control-side connecting member 32A connected to the first power semiconductor element 40Ab is connected to the first control-side connecting section 21c. Since the gate electrode 43 of the first power semiconductor element 40Ab is located on the third substrate side surface 11c of the first substrate 11 in the lateral direction X, the first control-side connecting member 32A connected to the first power semiconductor element 40Ab extends diagonally toward the fourth substrate side surface 11d of the first substrate 11 as it approaches the first control-side connecting portion 21c.

[0084] The first control-side bypass section 21b is positioned spaced apart from the first control-side wiring section 21a in the vertical direction Y. In the vertical direction Y, the first control-side bypass section 21b is positioned on the opposite side of the first drive layer 23 from the first control-side wiring section 21a. The first control-side bypass section 21b extends along the horizontal direction X. The length of the first control-side bypass section 21b in the horizontal direction X is longer than the length of the first control-side wiring section 21a in the horizontal direction X. As can be seen from Figure 15, the first control-side connecting member 32A is not connected to the first control-side bypass section 21b. That is, the first control-side connecting member 32A is electrically connected to the first control-side bypass section 21b, but there is no physical contact.

[0085] The first control-side connecting portion 21c connects the first control-side wiring portion 21a and the first control-side bypass portion 21b. More specifically, the first control-side connecting portion 21c connects the end of the first control-side wiring portion 21a on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X, and the end of the first control-side bypass portion 21b on the third substrate side surface 11c side of the first control-side bypass portion 21b in the lateral direction X. The first control-side connecting portion 21c extends in the vertical direction Y. Viewed from the vertical direction Y, the first control-side connecting portion 21c is positioned to overlap with the end of the first power semiconductor element 40Ab on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X.

[0086] The first control-side connection portion 21d is formed at the tip of the first control-side bypass portion 21b. In the lateral direction X, the first control-side connection portion 21d is located on the fourth substrate side surface 11d of the first substrate 11, more so than the first control-side wiring portion 21a. The first control-side connection portion 21d extends in the vertical direction Y. The width dimension of the first control-side connection portion 21d (the lateral direction X dimension of the first control-side connection portion 21d) is greater than the width dimension of the first control-side bypass portion 21b (the vertical direction Y dimension of the first control-side bypass portion 21b). The first control-side connection portion 21d is positioned spaced apart from the first control-side wiring portion 21a in the lateral direction X, with the edge of the first control-side connection portion 21d on the first drive layer 23 side in the vertical direction Y being aligned in the vertical direction Y with the edge of the first control-side wiring portion 21a on the first drive layer 23 side in the vertical direction Y.

[0087] The first drive layer 23 extends along the lateral direction X. In plan view, the shape of the first drive layer 23 is a narrow strip. In this embodiment, the width dimension of the first drive layer 23 (the vertical dimension Y of the first drive layer 23) is equal to the width dimension of the first control side wiring section 21a in the first control layer 21 (the vertical dimension Y of the first control side wiring section 21a). Also, the width dimension of the first drive layer 23 is equal to the width dimension of the first control side bypass section 21b in the first control layer 21 (the vertical dimension Y of the first control side bypass section 21b).

[0088] Here, if the difference between the vertical Y dimension of the first drive layer 23 and the vertical Y dimension of the first control-side wiring section 21a in the first control layer 21 is, for example, within 5% of the vertical Y dimension of the first control-side wiring section 21a in the first control layer 21, then the width dimension of the first drive layer 23 can be said to be equal to the width dimension of the first control-side wiring section 21a in the first control layer 21. Also, if the difference between the vertical Y dimension of the first drive layer 23 and the vertical Y dimension of the first control-side bypass section 21b in the first control layer 21 is, for example, within 5% of the vertical Y dimension of the first control-side bypass section 21b in the first control layer 21, then the width dimension of the first drive layer 23 can be said to be equal to the width dimension of the first control-side bypass section 21b in the first control layer 21.

[0089] The length of the first drive layer 23 in the lateral direction X is longer than the length of the first control-side wiring portion 21a in the lateral direction X of the first control layer 21. Also, the length of the first drive layer 23 in the lateral direction X is longer than the length of the first control-side bypass portion 21b in the lateral direction X of the first control layer 21. Viewed from the vertical direction Y, the end of the first drive layer 23 on the third substrate side surface 11c of the first substrate 11 in the lateral direction X is aligned with the first control-side connection portion 21c of the first control layer 21. Viewed from the vertical direction Y, the end of the first drive layer 23 on the fourth substrate side surface 11d of the first substrate 11 in the lateral direction X is aligned with the first control-side connection portion 21d of the first control layer 21. Furthermore, when viewed from the vertical direction Y, the end of the first drive layer 23 on the fourth substrate side surface 11d side of the first substrate 11 and the first control side connection portion 21d of the first control layer 21 are aligned with the interlayer connection portion 13c of the first mounting layer 13A in the horizontal direction X.

[0090] The first drive layer 23 is connected to a first drive-side connecting member 33A, which is connected to each of the multiple first power semiconductor elements 40A. The multiple first drive-side connecting members 33A are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. Each of the first drive-side connecting members 33A connected to the multiple first power semiconductor elements 40A extends along the vertical direction Y in a plan view.

[0091] As shown in Figure 16, the first drive layer 24 has a first drive-side wiring section 24a, a first drive-side bypass section 24b, a first drive-side connecting section 24c, and a first drive-side connection section 24d. In this embodiment, the first drive layer 24 is a single member in which the first drive-side wiring section 24a, the first drive-side bypass section 24b, the first drive-side connecting section 24c, and the first drive-side connection section 24d are integrally formed. The first drive layer 24 is made of, for example, copper foil. In plan view, the shapes of the first drive-side wiring section 24a, the first drive-side bypass section 24b, and the first drive-side connecting section 24c are narrow strips.

[0092] The first drive-side wiring portion 24a extends along the lateral direction X. In the lateral direction X, the end portion 24e of the first drive-side wiring portion 24a on the third substrate side surface 12c of the second substrate 12 is located on the third substrate side surface 12c of the second substrate 12, more so than the first power semiconductor element 40Ac on the third substrate side surface 12c side of the plurality of first power semiconductor elements 40A.

[0093] The first drive-side wiring section 24a is connected to a first drive-side connecting member 33A, which is connected to each of the multiple first power semiconductor elements 40A. The multiple first drive-side connecting members 33A are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. Each of the first drive-side connecting members 33A connected to the multiple first power semiconductor elements 40A extends along the vertical direction Y in a plan view.

[0094] The first drive-side bypass section 24b is positioned spaced apart from the first drive-side wiring section 24a in the vertical direction Y. In the vertical direction Y, the first drive-side bypass section 24b is positioned on the opposite side of the first control layer 22 from the first drive-side wiring section 24a. The first drive-side bypass section 24b extends along the horizontal direction X. The length of the first drive-side bypass section 24b in the horizontal direction X is slightly longer than the length of the first drive-side wiring section 24a in the horizontal direction X. As can be seen from Figure 16, the first drive-side connecting member 33A is not connected to the first drive-side bypass section 24b. That is, the first drive-side connecting member 33A is electrically connected to the first drive-side bypass section 24b, but there is no physical contact.

[0095] The first drive-side connecting portion 24c connects the first drive-side wiring portion 24a and the first drive-side bypass portion 24b. More specifically, the first drive-side connecting portion 24c connects the end of the first drive-side wiring portion 24a on the fourth substrate side 12d side of the second substrate 12 in the lateral direction X, and the end of the first drive-side bypass portion 24b on the fourth substrate side 12d side of the first drive-side bypass portion 24b in the lateral direction X. The first drive-side connecting portion 24c extends in the vertical direction Y. In the lateral direction X, the first drive-side connecting portion 24c is positioned adjacent to the terminal-side connection portion 13e of the first mounting layer 13B. Viewed from the vertical direction Y, the first drive-side connecting portion 24c is positioned to overlap with the first power semiconductor element 40Ad on the fourth substrate side 12d side of the second substrate 12 in the lateral direction X, among the plurality of first power semiconductor elements 40A.

[0096] The first drive-side connection portion 24d is formed at the tip of the first drive-side bypass portion 24b. In the lateral direction X, the first drive-side connection portion 24d is located on the third substrate side surface 12c of the second substrate 12, more so than the first drive-side wiring portion 24a. The first drive-side connection portion 24d extends in the vertical direction Y. In the vertical direction Y, the first drive-side connection portion 24d is positioned adjacent to the interlayer connection portion 13f of the first mounting layer 13B. The width dimension of the first drive-side connection portion 24d (the lateral direction X dimension of the first drive-side connection portion 24d) is greater than the width dimension of the first drive-side bypass portion 24b (the vertical direction Y dimension of the first drive-side bypass portion 24b). The first drive-side connection portion 24d is positioned such that the edge of the first drive-side connection portion 24d on the first mounting layer 13B side in the vertical direction Y is aligned in the vertical direction Y with the edge of the first drive-side wiring portion 24a on the first mounting layer 13B side in the vertical direction Y, and is spaced apart from the first drive-side wiring portion 24a in the horizontal direction X.

[0097] The first control layer 22 extends along the lateral direction X. In a plan view, the shape of the first control layer 22 is a narrow strip. In this embodiment, the width dimension of the first control layer 22 (the vertical dimension Y of the first control layer 22) is equal to the width dimension of the first drive-side wiring section 24a in the first drive layer 24 (the vertical dimension Y of the first drive-side wiring section 24a). Also, the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side bypass section 24b in the first drive layer 24 (the vertical dimension Y of the first drive-side bypass section 24b).

[0098] Here, if the difference between the vertical Y dimension of the first control layer 22 and the vertical Y dimension of the first drive-side wiring section 24a in the first drive layer 24 is, for example, within 5% of the vertical Y dimension of the first drive-side wiring section 24a in the first drive layer 24, then the width dimension of the first control layer 22 can be said to be equal to the width dimension of the first drive-side wiring section 24a in the first drive layer 24. Also, if the difference between the vertical Y dimension of the first control layer 22 and the vertical Y dimension of the first drive-side bypass section 24b in the first drive layer 24 is, for example, within 5% of the vertical Y dimension of the first drive-side bypass section 24b in the first drive layer 24, then the width dimension of the first control layer 22 can be said to be equal to the width dimension of the first drive-side bypass section 24b in the first drive layer 24.

[0099] The length of the first control layer 22 in the lateral direction X is slightly shorter than the length of the first drive-side wiring portion 24a in the lateral direction X of the first drive layer 24. Viewed from the vertical direction Y, the end of the first control layer 22 on the third substrate side surface 12c of the second substrate 12 in the lateral direction X is aligned with the end 24e of the first drive-side wiring portion 24a of the first drive layer 24. Viewed from the lateral direction X, the first control layer 22 overlaps with the first drive-side connection portion 24d of the first drive layer 24.

[0100] The first control layer 22 is connected to a first control-side connecting member 32A, which is connected to each of the multiple first power semiconductor elements 40A on the second substrate 12. The multiple first control-side connecting members 32A are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. The first control-side connecting members 32A connected to the four first power semiconductor elements 40A, excluding the first power semiconductor element 40Ad which is located closest to the fourth substrate side surface 12d of the second substrate 12, each extend along the vertical direction Y in a plan view. Because the gate electrode 43 of the first power semiconductor element 40Ad is located closer to the fourth substrate side surface 12d of the second substrate 12 than the first control layer 22, the first control-side connecting member 32A connected to the first power semiconductor element 40Ad extends diagonally toward the third substrate side surface 12c as it approaches the first substrate side surface 12a of the second substrate 12.

[0101] As shown in Figures 14 to 16, the first control-side connection portion 21d is connected to the first control terminal-side connection member 35A and the first control layer connection member 93A, respectively. More specifically, the first control terminal-side connection member 35A is connected to the end of the first control-side connection portion 21d in the vertical direction Y that is on the side surface 11a side of the first substrate 11.

[0102] The first control layer connecting member 93A is connected to the end of the first control-side connecting portion 21d on the first drive layer 23 side in the vertical direction Y. The first control layer connecting member 93A is also connected to the end of the first control layer 22 on the third substrate side surface 12c side of the second substrate 12 in the horizontal direction X. In plan view, the first control layer connecting member 93A extends along the horizontal direction X. As can be seen from Figure 16, the first control layer connecting member 93A is formed to straddle the first drive-side connecting portion 24d of the first drive layer 24 in the horizontal direction X.

[0103] The first drive-side connection portion 24d is connected to the first detection terminal-side connection member 36A and the first drive layer connection member 94A, respectively. More specifically, the first detection terminal-side connection member 36A is connected to the end of the first drive-side connection portion 24d in the vertical direction Y that is on the side surface 12a side of the second substrate 12.

[0104] A first drive layer connecting member 94A is connected to the end of the first drive layer 23 on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X. The first drive layer connecting member 94A is connected to the end of the first drive side connecting portion 24d on the first mounting layer 13B side in the vertical direction Y. In a plan view, the first drive layer connecting member 94A extends along the lateral direction X.

[0105] As shown in Figure 17, the side wall 81B of the case 80 is provided so as to be adjacent to the second control layer 26 and the second drive layer 27 in the vertical direction Y. Therefore, the second control terminal 53B and the second detection terminal 54B provided on the side wall 81B are arranged so as to be adjacent to the second control layer 26 and the second drive layer 27 in the vertical direction Y.

[0106] More specifically, the second control terminal 53B and the second detection terminal 54B are located on the first substrate 11 side of the second control layer 26, and are positioned adjacent to the second drive layer 27 in the vertical direction Y. Viewed from the vertical direction Y, the second control terminal 53B and the second detection terminal 54B are positioned to overlap with the first substrate 11. The second control terminal 53B and the second detection terminal 54B are positioned adjacent to each other in the horizontal direction X. In the horizontal direction X, the second control terminal 53B and the second detection terminal 54B are positioned closer to the fourth substrate side 11d of the first substrate 11. In the horizontal direction X, the second detection terminal 54B is positioned closer to the terminal base 82A than the second control terminal 53B. The second control terminal 53B and the second control layer 26 are connected by a second control terminal side connecting member 35B, which serves as a connecting member 30. The second detection terminal 54B and the second drive layer 27 are connected by a connecting member 30, which is a second detection terminal side connecting member 36B.

[0107] Thus, since the second control layer 25 is electrically connected to the second control layer 26 via the second control layer connecting member 93B, the gate electrode 43 of each second power semiconductor element 40B on the first substrate 11 is electrically connected to the second control terminal 53B via the second control-side connecting member 32B, the second control layer 25, the second control layer connecting member 93B, the second control layer 26, and the second control terminal-side connecting member 35B. The gate electrode 43 of each second power semiconductor element 40B on the second substrate 12 is electrically connected to the first control terminal 53A via the second control-side connecting member 32B, the second control layer 26, and the second control terminal-side connecting member 35B.

[0108] Furthermore, the source electrodes 42 of each second power semiconductor element 40B on the first substrate 11 are electrically connected to the second detection terminal 54B via the second drive-side connecting member 33B, the second drive layer 27, and the second detection terminal-side connecting member 36B. Also, since the second drive layer 28 is electrically connected to the second drive layer 27 via the second drive layer connecting member 94B, the source electrodes 42 of each second power semiconductor element 40B on the second substrate 12 are electrically connected to the second detection terminal 54B via the second drive-side connecting member 33B, the second drive layer 27, the second drive layer connecting member 94B, the second drive layer 28, and the second detection terminal-side connecting member 36B.

[0109] As shown in Figure 18, the second drive layer 27 has a second drive-side wiring section 27a, a second drive-side bypass section 27b, a second drive-side connecting section 27c, and a second drive-side connection section 27d. In this embodiment, the second drive layer 27 is a single component in which the second drive-side wiring section 27a, the second drive-side bypass section 27b, the second drive-side connecting section 27c, and the second drive-side connection section 27d are integrally formed. The second drive layer 27 is made of, for example, copper foil. In plan view, the shapes of the second drive-side wiring section 27a, the second drive-side bypass section 27b, and the second drive-side connecting section 27c are narrow strips.

[0110] The second drive-side wiring section 27a extends along the lateral direction X. In the vertical direction Y, the second drive-side wiring section 27a is positioned adjacent to the conductive layer 15A. In the lateral direction X, the end 27e of the second drive-side wiring section 27a on the fourth substrate side 11d side of the first substrate 11 is located on the fourth substrate side 11d side of the first substrate 11, further to the fourth substrate side 11d side than the second power semiconductor element 40Ba among the plurality of second power semiconductor elements 40B that is closest to the fourth substrate side 11d. Viewed from the vertical direction Y, the second drive-side wiring section 27a extends in the lateral direction X so as to overlap with all of the second power semiconductor elements 40B arranged on the first substrate 11.

[0111] The second drive-side wiring section 27a is connected to a second drive-side connecting member 33B, which is connected to each of the multiple second power semiconductor elements 40B. The multiple second drive-side connecting members 33B are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple second power semiconductor elements 40B. Each of the second drive-side connecting members 33B connected to the multiple second power semiconductor elements 40B extends along the vertical direction Y in a plan view.

[0112] The second drive-side bypass section 27b is positioned spaced apart from the second drive-side wiring section 27a in the vertical direction Y. In the vertical direction Y, the second drive-side bypass section 27b is positioned on the opposite side of the second control layer 25 from the second drive-side wiring section 27a. In the vertical direction Y, the second drive-side bypass section 27b is positioned on the second substrate side surface 11b side of the first substrate 11, rather than on the second control layer 25. In the vertical direction Y, the second drive-side bypass section 27b is positioned adjacent to the second substrate side surface 11b of the first substrate 11. The second drive-side bypass section 27b extends along the horizontal direction X. The length of the second drive-side bypass section 27b in the horizontal direction X is slightly longer than the length of the second drive-side wiring section 27a in the horizontal direction X. As can be seen from Figure 18, the second drive-side connecting member 33B is not connected to the second drive-side bypass section 27b. In other words, the second drive-side connecting member 33B is electrically connected to the second drive-side bypass portion 27b, but is not in physical contact with it.

[0113] The second drive-side connecting portion 27c connects the second drive-side wiring portion 27a and the second drive-side bypass portion 27b. More specifically, the second drive-side connecting portion 27c connects the end of the second drive-side wiring portion 27a on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X, and the end of the second drive-side bypass portion 27b on the third substrate side surface 11c side of the second drive-side connecting portion 27b in the lateral direction X. The second drive-side connecting portion 27c extends in the vertical direction Y. Viewed from the vertical direction Y, the second drive-side connecting portion 27c is positioned to overlap with the end of the second power semiconductor element 40Bb that is closest to the third substrate side surface 11c side of the first substrate 11 in the lateral direction X.

[0114] The second drive-side connection portion 27d is formed at the tip of the second drive-side bypass portion 27b. In the lateral direction X, the second drive-side connection portion 27d is located on the fourth substrate side surface 11d side of the first substrate 11 than the second drive-side wiring portion 27a. The second drive-side connection portion 27d extends in the vertical direction Y. The width dimension of the second drive-side connection portion 27d (the lateral direction X dimension of the second drive-side connection portion 27d) is larger than the width dimension of the second drive-side bypass portion 27b (the vertical direction Y dimension of the second drive-side bypass portion 27b). The second drive-side connection portion 27d is positioned spaced apart from the second drive-side wiring portion 27a in the lateral direction X, with the edge of the second drive-side connection portion 27d on the conductive layer 15A side in the vertical direction Y being aligned in the vertical direction Y with the edge of the second drive-side wiring portion 27a on the conductive layer 15A side in the vertical direction Y.

[0115] The second control layer 25 extends along the lateral direction X. In plan view, the shape of the second control layer 25 is a narrow strip. In this embodiment, the width dimension of the second control layer 25 (the vertical dimension Y of the second control layer 25) is equal to the width dimension of the second drive-side wiring section 27a in the second drive layer 27 (the vertical dimension Y of the second drive-side wiring section 27a). Also, the width dimension of the second control layer 25 is equal to the width dimension of the second drive-side bypass section 27b in the second drive layer 27 (the vertical dimension Y of the second drive-side bypass section 27b).

[0116] Here, if the difference between the vertical Y dimension of the second control layer 25 and the vertical Y dimension of the second drive-side wiring section 27a in the second drive layer 27 is, for example, within 5% of the vertical Y dimension of the second drive-side wiring section 27a in the second drive layer 27, then the width dimension of the second control layer 25 can be said to be equal to the width dimension of the second drive-side wiring section 27a in the second drive layer 27. Also, if the difference between the vertical Y dimension of the second control layer 25 and the vertical Y dimension of the second drive-side bypass section 27b in the second drive layer 27 is, for example, within 5% of the vertical Y dimension of the second drive-side bypass section 27b in the second drive layer 27, then the width dimension of the second control layer 25 can be said to be equal to the width dimension of the second drive-side bypass section 27b in the second drive layer 27.

[0117] The length of the second control layer 25 in the lateral direction X is slightly shorter than the length of the second drive-side wiring portion 27a in the second drive layer 27 in the lateral direction X. Viewed from the vertical direction Y, the end portion 25x of the second control layer 25 on the fourth substrate side surface 11d of the first substrate 11 in the lateral direction X is aligned with the end portion 27e of the second drive-side wiring portion 27a of the second drive layer 27.

[0118] The second control layer 25 is connected to a second control-side connecting member 32B, which is connected to each of the multiple second power semiconductor elements 40B. The multiple second control-side connecting members 32B are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple second power semiconductor elements 40B. Each of the second control-side connecting members 32B connected to the multiple second power semiconductor elements 40B extends along the vertical direction Y in a plan view. A first drive layer connecting member 94A is connected to the end of the first drive layer 23 on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X.

[0119] As shown in Figure 19, the second control layer 26 has a second control-side wiring section 26a, a second control-side bypass section 26b, a second control-side connecting section 26c, and a second control-side connection section 26d. In this embodiment, the second control layer 26 is a single component in which the second control-side wiring section 26a, the second control-side bypass section 26b, the second control-side connecting section 26c, and the second control-side connection section 26d are integrally formed. The second control layer 26 is made of, for example, copper foil. In plan view, the shapes of the second control-side wiring section 26a, the second control-side bypass section 26b, and the second control-side connecting section 26c are narrow strips.

[0120] The second control-side wiring section 26a extends along the lateral direction X. In the lateral direction X, the end 26e of the second control-side wiring section 26a on the third substrate side surface 12c of the second substrate 12 is located on the third substrate side surface 12c of the second substrate 12, more so than the second power semiconductor element 40Bc that is closest to the third substrate side surface 12c among the plurality of second power semiconductor elements 40B.

[0121] The second control-side wiring section 26a is connected to a second control-side connecting member 32B, which is connected to each of the multiple second power semiconductor elements 40B. The multiple second control-side connecting members 32B are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple second power semiconductor elements 40B. Each of the second control-side connecting members 32B connected to the multiple second power semiconductor elements 40B extends along the vertical direction Y in a plan view.

[0122] The second control-side bypass section 26b is positioned spaced apart from the second control-side wiring section 26a in the vertical direction Y. In the vertical direction Y, the second control-side bypass section 26b is positioned on the opposite side from the second drive layer 28 to the second control-side wiring section 26a. In the vertical direction Y, the second control-side bypass section 26b is positioned adjacent to the second substrate side surface 12b of the second substrate 12. The second control-side bypass section 26b extends along the horizontal direction X. The length of the second control-side bypass section 26b in the horizontal direction X is slightly longer than the length of the second control-side wiring section 26a in the horizontal direction X. As can be seen from Figure 19, the second control-side connecting member 32B is not connected to the second control-side bypass section 26b. That is, the second control-side connecting member 32B is electrically connected to the second control-side bypass section 26b, but there is no physical contact.

[0123] The second control-side connecting portion 26c connects the second control-side wiring portion 26a and the second control-side bypass portion 26b. More specifically, the second control-side connecting portion 26c connects the end of the second control-side wiring portion 26a on the fourth substrate side 12d side of the second substrate 12 in the lateral direction X, and the end of the second control-side bypass portion 26b on the fourth substrate side 12d side of the second control-side bypass portion 26b in the lateral direction X. The second control-side connecting portion 26c extends in the vertical direction Y. In the lateral direction X, the second control-side connecting portion 26c is positioned adjacent to the terminal-side connection portion 14d of the second mounting layer 14B. Viewed from the vertical direction Y, the second control-side connecting portion 26c is positioned to overlap with the second power semiconductor element 40Bd that is closest to the fourth substrate side 12d side of the second substrate 12 in the lateral direction X among the multiple second power semiconductor elements 40B.

[0124] The second control-side connection portion 26d is formed at the tip of the second control-side bypass portion 26b. In the lateral direction X, the second control-side connection portion 26d is located on the third substrate side surface 12c of the second substrate 12, more so than the second control-side wiring portion 26a. The second control-side connection portion 26d extends in the vertical direction Y. In the vertical direction Y, the second control-side connection portion 26d is positioned adjacent to the second drive layer 28. The width dimension of the second control-side connection portion 26d (the lateral dimension of the second control-side connection portion 26d) is greater than the width dimension of the second control-side bypass portion 26b (the vertical dimension of the second control-side bypass portion 26b). The second control-side connection portion 26d is positioned such that the edge of the second control-side connection portion 26d on the second drive layer 28 side in the vertical direction Y is aligned in the vertical direction Y with the edge of the second control-side wiring portion 26a on the second drive layer 28 side in the vertical direction Y, and is spaced apart from the second control-side wiring portion 26a in the horizontal direction X.

[0125] The second drive layer 28 extends along the lateral direction X. In plan view, the shape of the second drive layer 28 is a narrow strip. In this embodiment, the width dimension of the second drive layer 28 (the vertical dimension Y of the second drive layer 28) is equal to the width dimension of the second control side wiring section 26a in the second control layer 26 (the vertical dimension Y of the second control side wiring section 26a). Also, the width dimension of the second drive layer 28 is equal to the width dimension of the second control side bypass section 26b in the second control layer 26 (the vertical dimension Y of the second control side bypass section 26b).

[0126] Here, if the difference between the vertical Y dimension of the second drive layer 28 and the vertical Y dimension of the second control-side wiring section 26a in the second control layer 26 is, for example, within 5% of the vertical Y dimension of the second control-side wiring section 26a in the second control layer 26, then the width dimension of the second drive layer 28 can be said to be equal to the width dimension of the second control-side wiring section 26a in the second control layer 26. Also, if the difference between the vertical Y dimension of the second drive layer 28 and the vertical Y dimension of the second control-side bypass section 26b in the second control layer 26 is, for example, within 5% of the vertical Y dimension of the second control-side bypass section 26b in the second control layer 26, then the width dimension of the second drive layer 28 can be said to be equal to the width dimension of the second control-side bypass section 26b in the second control layer 26.

[0127] The length of the second drive layer 28 in the lateral direction X is longer than the length of the second control side wiring portion 26a in the second control layer 26 in the lateral direction X. Viewed from the vertical direction Y, the end of the second drive layer 28 on the fourth substrate side 12d side of the second substrate 12 in the lateral direction X is aligned with the second control side connection portion 26c of the second control layer 26. Viewed from the vertical direction Y, the end of the second drive layer 28 on the third substrate side 12c side of the second substrate 12 in the lateral direction X is aligned with the second control side connection portion 26d of the second control layer 26.

[0128] The second drive layer 28 is connected to a second drive-side connecting member 33B, which is connected to each of the multiple second power semiconductor elements 40B on the second substrate 12. The multiple second drive-side connecting members 33B are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple second power semiconductor elements 40B. The second drive-side connecting members 33B connected to the multiple second power semiconductor elements 40B extend along the vertical direction Y in a plan view.

[0129] As shown in Figures 17 to 19, the second detection terminal side connecting member 36B is connected to the second drive side bypass portion 27b. More specifically, the second detection terminal side connecting member 36B is connected to the end of the second drive side bypass portion 27b on the second drive side connecting portion 27d side.

[0130] The second drive-side connection portion 27d is connected to the second drive-layer connection member 94B. More specifically, the second drive-layer connection member 94B is connected to the end of the second drive-side connection portion 27d on the conductive layer 15A side in the vertical direction Y. The second drive-layer connection member 94B is also connected to the end of the second drive-layer 28 on the third substrate side surface 12c side of the second substrate 12 in the horizontal direction X. In a plan view, the second drive-layer connection member 94B extends along the horizontal direction X.

[0131] A second control layer connecting member 93B is connected to the end 25x of the second control layer 25 on the fourth substrate side surface 11d side of the first substrate 11. The second control layer connecting member 93B is also connected to the second control side connection portion 26d of the second control layer 26. The second control layer connecting member 93B is connected to the end of the second control side connection portion 26d on the second drive layer 28 side in the vertical direction Y. In a plan view, the second control layer connecting member 93B extends along the horizontal direction X. As shown in Figure 18, the second control layer connecting member 93B is formed to straddle the second drive side connection portion 27d of the second drive layer 27 in the horizontal direction X.

[0132] A second control terminal side connecting member 35B is connected to the second control side connecting portion 26d. More specifically, the second control terminal side connecting member 35B is connected to the end of the second control side connecting portion 26d in the vertical direction Y that is on the side surface 12b of the second substrate 12.

[0133] As shown in Figures 11 to 19, each control-side connecting member 32A, 32B, each drive-side connecting member 33A, 33B, power supply current detection-side connecting member 34, each control terminal-side connecting member 35A, 35B, each detection terminal-side connecting member 36A, 36B, thermistor-side connecting member 37, each control layer connecting member 93A, 93B, and each drive layer connecting member 94A, 94B are wires made of Au (gold), Au alloy, Al, Al alloy, Cu, or Cu alloy, respectively.

[0134] (Conductive path) Next, we will explain the control-side conductive path, which is the first conductive path between each power semiconductor element 40A, 40B and each control terminal 53A, 53B, and the drive-side conductive path, which is the second conductive path between each power semiconductor element 40A, 40B and each detection terminal 54A, 54B.

[0135] As shown in Figure 14, the first control-side conductive path from the gate electrode 43 to the first control terminal 53A of the multiple first power semiconductor elements 40A on the first substrate 11 is composed of the first control-side connecting member 32A, the first control layer 21, and the first control terminal-side connecting member 35A. Therefore, the first control-side conductive path for the multiple first power semiconductor elements 40A on the first substrate 11 becomes progressively longer as you move from the first power semiconductor element 40Ab towards the first power semiconductor element 40Aa. In other words, the difference in length of the first control-side conductive path is greatest for the first power semiconductor element 40Aa, which is the first end power semiconductor element, and the first power semiconductor element 40Ab, which is the second end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple first power semiconductor elements 40A. In this case, the length of the first control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Aa, is the longest, and the length of the second control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ab, is the shortest.

[0136] The first drive-side conductive path from the source electrode 42 to the first detection terminal 54A of the multiple first power semiconductor elements 40A on the first substrate 11 is composed of the first drive-side connecting member 33A, the first drive layer 23, the first drive layer connecting member 94A, the first drive-side connecting portion 24d of the first drive layer 24, and the first detection terminal-side connecting member 36A. Therefore, the first drive-side conductive path for the multiple first power semiconductor elements 40A on the first substrate 11 becomes progressively longer as you move from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab. In other words, the difference in length of the first drive-side conductive path is greatest for the first power semiconductor element 40Aa, which is the first end power semiconductor element, and the first power semiconductor element 40Ab, which is the second end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple first power semiconductor elements 40A. In this case, the length of the first drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Aa, is the shortest, and the length of the second drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ab, is the longest.

[0137] The first control-side conductive path from the gate electrode 43 to the first control terminal 53A of the multiple first power semiconductor elements 40A on the second substrate 12 is composed of the first control-side connecting member 32A, the first control layer 22, the first control layer connecting member 93A, the first control-side connecting portion 21d of the first control layer 21, and the first control terminal-side connecting member 35A. Therefore, the first control-side conductive path for the multiple first power semiconductor elements 40A on the second substrate 12 becomes progressively longer as you move from the first power semiconductor element 40Ac to the first power semiconductor element 40Ad. In other words, the difference in length of the first control-side conductive path is greatest for the first power semiconductor element 40Ac, which is the first end power semiconductor element, and the first power semiconductor element 40Ad, which is the second end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple first power semiconductor elements 40A. In this case, the length of the first end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ac, is the shortest, and the length of the second end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ad, is the longest.

[0138] The first drive-side conductive path from the source electrode 42 to the first detection terminal 54A of the multiple first power semiconductor elements 40A on the second substrate 12 is composed of the first drive-side connecting member 33A, the first drive layer 24, and the first detection terminal-side connecting member 36A. Therefore, the first drive-side conductive path for the multiple first power semiconductor elements 40A on the second substrate 12 becomes progressively longer as you move from the first power semiconductor element 40Ad to the first power semiconductor element 40Ac. In other words, the difference in length of the first drive-side conductive path is greatest for the first power semiconductor element 40Ac, which is the first end power semiconductor element, and the first power semiconductor element 40Ad, which is the second end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple first power semiconductor elements 40A. In this case, the length of the first drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ac, is the longest, and the length of the second drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ad, is the shortest.

[0139] As described above, in this embodiment, the first control-side bypass section 21b and the first drive-side bypass section 24b are formed to reduce variations in the total length of the first control-side conductive path and the first drive-side conductive path among the multiple first power semiconductor elements 40A. That is, the power module 1A of this embodiment is configured such that the sum of the length of the first control-side conductive path, which is an example of a first conductive path, and the length of the first drive-side conductive path, which is an example of a second conductive path, approaches each other among the multiple first power semiconductor elements 40A, thanks to the first control-side bypass section 21b and the first drive-side bypass section 24b.

[0140] Furthermore, in this embodiment, the first control-side bypass section 21b and the first drive-side bypass section 24b are formed to reduce the variation between the sum of the lengths of the first end control-side conductive path and the first end drive-side conductive path, and the sum of the lengths of the second end control-side conductive path and the second end drive-side conductive path.

[0141] The sum of the length of the first end control-side conductive path and the length of the first end drive-side conductive path is an example of the first sum described in the claims. Similarly, the sum of the length of the second end control-side conductive path and the length of the second end drive-side conductive path is an example of the second sum described in the claims. Therefore, the power module 1A of this embodiment is configured such that the first sum and the second sum are close to each other by the first control-side bypass section 21b and the first drive-side bypass section 24b.

[0142] As shown in Figure 17, the second control-side conductive path from the gate electrode 43 to the second control terminal 53B of the multiple second power semiconductor elements 40B on the first substrate 11 is composed of the second control-side connecting member 32B, the second control layer 25, the second control layer connecting member 93B, the second control-side connecting portion 26d of the second control layer 26, and the second control terminal-side connecting member 35B. Therefore, the second control-side conductive path, which is an example of a third conductive path for the multiple second power semiconductor elements 40B on the first substrate 11, becomes progressively longer as you move from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in length of the second control-side conductive path is greatest for the second power semiconductor element 40Ba, which is the first end power semiconductor element, and the second power semiconductor element 40Bb, which is the second end power semiconductor element, at both ends of the array direction (lateral direction X) of the multiple second power semiconductor elements 40B. In this case, the length of the third terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Ba, is the shortest, and the length of the fourth terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bb, is the longest.

[0143] The second drive-side conductive path from the source electrode 42 to the second detection terminal 54B of the multiple second power semiconductor elements 40B on the first substrate 11 is composed of the second drive-side connecting member 33B, the second drive layer 27, and the second detection terminal-side connecting member 36B. Therefore, the second drive-side conductive path, which is an example of a fourth conductive path for the multiple second power semiconductor elements 40B on the first substrate 11, becomes progressively longer as you move from the second power semiconductor element 40Bb towards the second power semiconductor element 40Ba. In other words, the difference in length of the second drive-side conductive path is greatest for the second power semiconductor element 40Ba, which is the first-end power semiconductor element, and the second power semiconductor element 40Bb, which is the second-end power semiconductor element, at both ends of the array direction (lateral direction X) of the multiple second power semiconductor elements 40B. In this case, the length of the third-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Ba, is the longest, and the length of the fourth-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Bb, is the shortest.

[0144] The second control-side conductive path from the gate electrode 43 to the second control terminal 53B of the multiple second power semiconductor elements 40B on the second substrate 12 is composed of the second control-side connecting member 32B, the second control layer 26, and the second control terminal-side connecting member 35B. Therefore, the second control-side conductive path, which is an example of a third conductive path for the multiple second power semiconductor elements 40B on the second substrate 12, becomes progressively longer as you move from the second power semiconductor element 40Bd towards the second power semiconductor element 40Bc. In other words, the difference in length of the second control-side conductive path is greatest for the second power semiconductor element 40Bc, which is the first end power semiconductor element, and the second power semiconductor element 40Bd, which is the second end power semiconductor element, at both ends of the array direction (lateral direction X) of the multiple second power semiconductor elements 40B. In this case, the length of the third terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bc, is the longest, and the length of the fourth terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bd, is the shortest.

[0145] The second drive-side conductive path from the source electrode 42 to the second detection terminal 54B of the multiple second power semiconductor elements 40B on the second substrate 12 is composed of the second drive-side connecting member 33B, the second drive layer 28, the second drive layer connecting member 94B, the second drive-side connecting portion 27d of the second drive layer 27, and the second detection terminal side connecting member 36B. Therefore, the second drive-side conductive path, which is an example of a fourth conductive path for the multiple second power semiconductor elements 40B on the second substrate 12, becomes progressively longer as it moves from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd. In other words, the difference in length of the second drive-side conductive path is greatest for the second power semiconductor element 40Bc, which is the first end power semiconductor element, and the second power semiconductor element 40Bd, which is the second end power semiconductor element, at both ends of the array direction (lateral direction X) of the multiple second power semiconductor elements 40B. In this case, the length of the third-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Bc, is the shortest, and the length of the fourth-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Bd, is the longest.

[0146] As described above, in this embodiment, the second control-side bypass section 26b and the second drive-side bypass section 27b are formed to reduce variations in the total length of the second control-side conductive path and the second drive-side conductive path among the multiple second power semiconductor elements 40B. That is, the power module 1A of this embodiment is configured such that the sum of the length of the second control-side conductive path, which is an example of a third conductive path, and the length of the second drive-side conductive path, which is an example of a fourth conductive path, approaches each other among the multiple second power semiconductor elements 40B, thanks to the second control-side bypass section 26b and the second drive-side bypass section 27b.

[0147] Furthermore, in this embodiment, the first control-side bypass section 21b and the first drive-side bypass section 24b are formed to reduce the variation between the sum of the lengths of the third-end control-side conductive path and the third-end drive-side conductive path, and the sum of the lengths of the fourth-end control-side conductive path and the fourth-end drive-side conductive path.

[0148] The sum of the length of the third end control-side conductive path and the length of the third end drive-side conductive path is an example of the third sum described in the claims. Similarly, the sum of the length of the fourth end control-side conductive path and the length of the fourth end drive-side conductive path is an example of the fourth sum described in the claims. Therefore, the power module 1A of this embodiment is configured such that the third sum and the fourth sum are brought closer together by the second control-side bypass section 26b and the second drive-side bypass section 27b.

[0149] (action) The operation of power module 1A in this embodiment will now be described. Figure 20 shows the internal structure of power module 1X of the comparative example. For convenience, case 80 is omitted in Figure 20. First, the configuration of power module 1X of the comparative example will be described below.

[0150] As shown in Figure 20, the power module 1X has a different configuration of each control layer and each drive layer compared to the power module 1A of this embodiment. For convenience, in power module 1X, the designation "X" is added after the reference numeral for each control layer and each drive layer that corresponds to each control layer 21, 22, 25, 26 and each drive layer 23, 24, 27, 28 of power module 1A.

[0151] As shown in Figure 21, the first control layer 21X and the first drive layer 23X are spaced apart in the vertical direction Y. The first drive layer 23X is positioned on the first mounting layer 13A side relative to the first control layer 21X. Both the first control layer 21X and the first drive layer 23X extend in the horizontal direction X. The first control layer 21X and the first control terminal 53A are electrically connected by the first control terminal side connecting member 35A. The first control layer 21X and each of the gate electrodes 43 of the plurality of first power semiconductor elements 40A on the first substrate 11 are electrically connected by the first control side connecting member 32A. The first drive layer 23X and each of the source electrodes 42 of the plurality of first power semiconductor elements 40A on the first substrate 11 are electrically connected by the first drive side connecting member 33A.

[0152] The first control layer 22X and the first drive layer 24X are spaced apart in the vertical direction Y. The first drive layer 24X is positioned on the first mounting layer 13B side relative to the first control layer 22X. Both the first control layer 22X and the first drive layer 24X extend in the horizontal direction X. The first control layer 22X and the first control layer 21X are electrically connected by a first control layer connecting member 93A. The first drive layer 24X and the first drive layer 23X are electrically connected by a first drive layer connecting member 94A. The first drive layer 24X and the first detection terminal 54A are electrically connected by a first detection terminal side connecting member 36A. The first control layer 22X and each of the gate electrodes 43 of the plurality of first power semiconductor elements 40A on the second substrate 12 are electrically connected by a first control side connecting member 32A. The first drive layer 24X and each of the source electrodes 42 of the multiple first power semiconductor elements 40A on the second substrate 12 are electrically connected by the first drive-side connecting member 33A.

[0153] The first control-side conductive path from the gate electrode 43 to the first control terminal 53A of the multiple first power semiconductor elements 40A on the first substrate 11 is composed of the first control-side connecting member 32A, the first control layer 21X, and the first control terminal-side connecting member 35A. Therefore, the first control-side conductive path for the multiple first power semiconductor elements 40A on the first substrate 11 becomes progressively longer as you move from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab. In other words, the difference in length of the first control-side conductive path is greatest for the first power semiconductor element 40Aa, which is the first end power semiconductor element, and the first power semiconductor element 40Ab, which is the second end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple first power semiconductor elements 40A. In this case, the length of the first control-side conductive path of the first power semiconductor element 40Aa is shortest, and the length of the second control-side conductive path of the first power semiconductor element 40Ab is longest.

[0154] The first drive-side conductive path from the source electrode 42 to the first detection terminal 54A of the multiple first power semiconductor elements 40A on the first substrate 11 is composed of the first drive-side connecting member 33A, the first drive layer 23X, the first drive layer connecting member 94A, the first drive layer 24X, and the first detection terminal-side connecting member 36A. Therefore, the first drive-side conductive path for the multiple first power semiconductor elements 40A on the first substrate 11 becomes progressively longer as you move from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab. In other words, the difference in length of the first drive-side conductive path is greatest for the first power semiconductor element 40Aa, which is the first end power semiconductor element, and the first power semiconductor element 40Ab, which is the second end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple first power semiconductor elements 40A. In this case, the length of the first drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Aa, is the shortest, and the length of the second drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ab, is the longest.

[0155] The first control-side conductive path from the gate electrode 43 to the first control terminal 53A of the multiple first power semiconductor elements 40A on the second substrate 12 is composed of the first control-side connecting member 32A, the first control layer 22X, the first control layer connecting member 93A, the first control layer 21X, and the first control terminal-side connecting member 35A. Therefore, the first control-side conductive path for the multiple first power semiconductor elements 40A on the second substrate 12 becomes progressively longer as you move from the first power semiconductor element 40Ac to the first power semiconductor element 40Ad. In other words, the difference in length of the first control-side conductive path is greatest for the first power semiconductor element 40Ac, which is the first end power semiconductor element, and the first power semiconductor element 40Ad, which is the second end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple first power semiconductor elements 40A. In this case, the length of the first end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ac, is the shortest, and the length of the second end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ad, is the longest.

[0156] The first drive-side conductive path from the source electrode 42 to the first detection terminal 54A of the multiple first power semiconductor elements 40A on the second substrate 12 is composed of the first drive-side connecting member 33A, the first drive layer 24X, and the first detection terminal-side connecting member 36A. Therefore, the first drive-side conductive path for the multiple first power semiconductor elements 40A on the second substrate 12 becomes progressively longer as you move from the first power semiconductor element 40Ac towards the first power semiconductor element 40Ad. In other words, the difference in length of the first drive-side conductive path is greatest for the first power semiconductor element 40Ac, which is the first end power semiconductor element, and the first power semiconductor element 40Ad, which is the second end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple first power semiconductor elements 40A. In this case, the length of the first drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ac, is the shortest, and the length of the second drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ad, is the longest.

[0157] Thus, in the power module 1X, both the first control-side conductive path and the first drive-side conductive path of the multiple first power semiconductor elements 40A on the first substrate 11 become progressively longer from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab. As a result, there is a large variation in the total length of the first control-side conductive path and the first drive-side conductive path of the multiple first power semiconductor elements 40A on the first substrate 11. In particular, the length of the first control-side conductive path of the first power semiconductor element 40Aa is the shortest, and the length of the first drive-side conductive path of the first power semiconductor element 40Aa is also the shortest. The length of the first control-side conductive path of the first power semiconductor element 40Ab is also the longest, and the length of the first drive-side conductive path of the first power semiconductor element 40Ab is also the longest. Therefore, there is a large variation between the sum of the length of the first control-side conductive path and the length of the first drive-side conductive path in the first power semiconductor element 40Aa, and the sum of the length of the first control-side conductive path and the length of the first drive-side conductive path in the first power semiconductor element 40Ab.

[0158] Furthermore, since both the first control-side conductive path and the first drive-side conductive path of the multiple first power semiconductor elements 40A on the second substrate 12 become progressively longer from the first power semiconductor element 40Ac towards the first power semiconductor element 40Ad, there is a large variation in the sum of the first control-side conductive path and the first drive-side conductive path in the multiple first power semiconductor elements 40A on the second substrate 12. In particular, the length of the first control-side conductive path of the first power semiconductor element 40Ac is the shortest, and the length of the first drive-side conductive path of the first power semiconductor element 40Ac is also the shortest. The length of the first control-side conductive path of the first power semiconductor element 40Ad is also the longest, and the length of the first drive-side conductive path of the first power semiconductor element 40Ad is also the longest. For this reason, there is a large variation in the sum of the lengths of the first control-side conductive path and the first drive-side conductive path in the first power semiconductor element 40Ac, and in the sum of the lengths of the first control-side conductive path and the first drive-side conductive path in the first power semiconductor element 40Ad.

[0159] As shown in Figure 22, the second control-side conductive path from the gate electrode 43 to the second control terminal 53B of the multiple second power semiconductor elements 40B on the first substrate 11 is composed of the second control-side connecting member 32B, the second control layer 25X, the second control layer connecting member 93B, the second control layer 26X, and the second control terminal-side connecting member 35B. Therefore, the second control-side conductive path for the multiple second power semiconductor elements 40B on the first substrate 11 becomes progressively longer as you move from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in length of the second control-side conductive path is greatest for the second power semiconductor element 40Ba, which is the first end power semiconductor element, and the second power semiconductor element 40Bb, which is the second end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple second power semiconductor elements 40B. In this case, the length of the third terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Ba, is the shortest, and the length of the fourth terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bb, is the longest.

[0160] The second drive-side conductive path from the source electrode 42 to the second detection terminal 54B of the multiple second power semiconductor elements 40B on the first substrate 11 is composed of the second drive-side connecting member 33B, the second drive layer 27X, and the second detection terminal-side connecting member 36B. Therefore, the second drive-side conductive path for the multiple second power semiconductor elements 40B on the first substrate 11 becomes progressively longer as you move from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in length of the second drive-side conductive path is greatest for the second power semiconductor element 40Ba, which is the first-end power semiconductor element, and the second power semiconductor element 40Bb, which is the second-end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple second power semiconductor elements 40B. In this case, the length of the third-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Ba, is the shortest, and the length of the fourth-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Bb, is the longest.

[0161] The second control-side conductive path from the gate electrode 43 to the second control terminal 53B of the multiple second power semiconductor elements 40B on the second substrate 12 is composed of the second control-side connecting member 32B, the second control layer 26X, and the second control terminal-side connecting member 35B. Therefore, the second control-side conductive path for the multiple second power semiconductor elements 40B on the second substrate 12 becomes progressively longer as you move from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd. In other words, the difference in length of the second control-side conductive path is greatest for the second power semiconductor element 40Bc, which is the first end power semiconductor element, and the second power semiconductor element 40Bd, which is the second end power semiconductor element, at both ends of the array direction (lateral direction X) of the multiple second power semiconductor elements 40B. In this case, the length of the third terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bc, is the shortest, and the length of the fourth terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bd, is the longest.

[0162] The second drive-side conductive path from the source electrode 42 to the second detection terminal 54B of the multiple second power semiconductor elements 40B on the second substrate 12 is composed of the second drive-side connecting member 33B, the second drive layer 28X, the second drive layer connecting member 94B, the second drive layer 27X, and the second detection terminal side connecting member 36B. Therefore, the second drive-side conductive path for the multiple second power semiconductor elements 40B on the second substrate 12 becomes progressively longer as you move from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd. In other words, the difference in length of the second drive-side conductive path is greatest for the second power semiconductor element 40Bc, which is the first end power semiconductor element, and the second power semiconductor element 40Bd, which is the second end power semiconductor element, both of which are at the same end in the arrangement direction (lateral direction X) of the multiple second power semiconductor elements 40B. In this case, the length of the third-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Bc, is the shortest, and the length of the fourth-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Bd, is the longest.

[0163] Thus, in the power module 1X, both the second control-side conductive path and the second drive-side conductive path of the multiple second power semiconductor elements 40B on the first substrate 11 become progressively longer as you move from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. As a result, there is a large variation in the total conductive path length, which is the sum of the second control-side conductive path and the second drive-side conductive path of the multiple second power semiconductor elements 40B on the first substrate 11. In particular, the second control-side conductive path of the second power semiconductor element 40Ba is the shortest, and the second drive-side conductive path of the second power semiconductor element 40Ba is also the shortest. The second control-side conductive path of the second power semiconductor element 40Bb is also the longest, and the second drive-side conductive path of the second power semiconductor element 40Bb is also the longest. Therefore, there is a large variation in the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path in the second power semiconductor element 40Ba, and in the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path in the second power semiconductor element 40Bb.

[0164] Furthermore, since both the second control-side conductive path and the second drive-side conductive path of the multiple second power semiconductor elements 40B on the second substrate 12 become progressively longer from the second power semiconductor element 40Bc towards the second power semiconductor element 40Bd, there is a large variation in the total conductive path length, which is the sum of the second control-side conductive path and the second drive-side conductive path in the multiple second power semiconductor elements 40B on the second substrate 12. In particular, the second control-side conductive path of the second power semiconductor element 40Bc is the shortest, and the second drive-side conductive path of the second power semiconductor element 40Bc is also the shortest. The second control-side conductive path of the second power semiconductor element 40Bd is also the longest, and the second drive-side conductive path of the second power semiconductor element 40Bd is also the longest. Therefore, there is a large variation in the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path in the second power semiconductor element 40Bc, and in the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path in the second power semiconductor element 40Bd.

[0165] As a result, as shown in Figure 23, the sum of the inductance values ​​between each first power semiconductor element 40A and the first control terminal 53A, and the inductance value between each first power semiconductor element 40A and the first detection terminal 54A, varies. As can be seen from Figure 23, among the multiple first power semiconductor elements 40A mounted on the first mounting layer 13A, the inductance value of the first power semiconductor element 40Aa is the smallest, and the inductance value of the first power semiconductor element 40Ab is the largest. In other words, the variation between the inductance value of the first power semiconductor element 40Aa and the inductance value of the first power semiconductor element 40Ab is the largest. Among the multiple first power semiconductor elements 40A mounted on the first mounting layer 13B, the inductance value of the first power semiconductor element 40Ac is the smallest, and the inductance value of the first power semiconductor element 40Ad is the largest. In other words, the variation between the inductance value of the first power semiconductor element 40Ac and the inductance value of the first power semiconductor element 40Ad is greatest.

[0166] Furthermore, the sum of the inductance values ​​between the second power semiconductor element 40B and the second control terminal 53B, and the inductance value between the second power semiconductor element 40B and the second detection terminal 54B, varies for each second power semiconductor element 40B. As can be seen from Figure 23, among the multiple second power semiconductor elements 40B mounted on the second mounting layer 14A, the inductance value of the second power semiconductor element 40Ba is the smallest, and the inductance value of the second power semiconductor element 40Bb is the largest. In other words, the variation between the inductance value of the second power semiconductor element 40Ba and the inductance value of the second power semiconductor element 40Bb is the largest. Among the multiple second power semiconductor elements 40B mounted on the second mounting layer 14B, the inductance value of the second power semiconductor element 40Bc is the smallest, and the inductance value of the second power semiconductor element 40Bd is the largest. In other words, the variation between the inductance value of the second power semiconductor element 40Bc and the inductance value of the second power semiconductor element 40Bd is the largest.

[0167] As a result, when a gate voltage Vg is applied to each first power semiconductor element 40A and each second power semiconductor element 40B, the waveform of the gate voltage Vg may fluctuate due to variations in inductance values. In particular, when high-speed switching is performed using SiCMOSFETs as each first power semiconductor element 40A and each second power semiconductor element 40B in the power module 1X, ringing may occur as shown in Figure 24.

[0168] In view of these points, in this embodiment, as described above, a first control-side bypass section 21b and a first drive-side bypass section 24b are formed in each of the multiple first power semiconductor elements 40A to reduce variations in the sum of the lengths of the first control-side conductive path and the first drive-side conductive path. In addition, a second control-side bypass section 26b and a second drive-side bypass section 27b are formed in each of the multiple second power semiconductor elements 40B to reduce variations in the sum of the lengths of the second control-side conductive path and the second drive-side conductive path. As a result, as shown in Figure 23, the variation in the sum of the inductance values ​​between each first power semiconductor element 40A and the first control terminal 53A and the inductance value between each first power semiconductor element 40A and the first detection terminal 54A is reduced. Furthermore, the variation in the sum of the inductance values ​​between the second power semiconductor element 40B and the second control terminal 53B, and between the second power semiconductor element 40B and the second detection terminal 54B, is reduced. As a result, in the power module 1A of this embodiment, even when high-speed switching is performed using SiCMOSFETs as each first power semiconductor element 40A and each second power semiconductor element 40B, the occurrence of ringing can be suppressed, as shown in Figure 25.

[0169] (effect) The following effects can be obtained with the power module 1A of this embodiment. (1-1) The first control layer 21 has a first control-side bypass section 21b, and the first drive layer 24 has a first drive-side bypass section 24b. As a result, variations in the sum of the lengths of the first control-side conductive paths and the first drive-side conductive paths for multiple first power semiconductor elements 40A are suppressed, and variations in inductance values ​​caused by these lengths can be suppressed. Consequently, ringing can be suppressed in multiple first power semiconductor elements 40A, and the power module 1A can operate stably.

[0170] (1-2) In a plan view, the power module 1A has a shape in which the horizontal direction X is the longer side direction and the vertical direction Y is the shorter side direction. The first control-side bypass portion 21b of the first control layer 21 is spaced apart from the first control-side wiring portion 21a in the vertical direction Y and extends along the horizontal direction X. The first drive-side bypass portion 24b of the first drive layer 24 is spaced apart from the first drive-side wiring portion 24a in the vertical direction Y and extends along the horizontal direction X. The second drive-side bypass portion 27b of the second drive layer 27 is spaced apart from the second drive-side wiring portion 27a in the vertical direction Y and extends along the horizontal direction X. The second control-side bypass portion 26b of the second control layer 26 is spaced apart from the second control-side wiring portion 26a in the vertical direction Y and extends along the horizontal direction X. Thus, since each bypass section 21b, 24b, 26b, and 27b extends in the lateral direction X, which is the direction of the longer side of the power module 1A, it is possible to suppress an increase in the vertical direction Y of the power module 1A.

[0171] (1-3) The first control layer 21 consists of a single member in which the first control side wiring section 21a, the first control side bypass section 21b, and the first control side connecting section 21c are integrally formed. With this configuration, for example, compared to a configuration in which the first control side wiring section 21a, the first control side bypass section 21b, and the first control side connecting section 21c are formed individually and wires are used to connect the first control side wiring section 21a, the first control side bypass section 21b, and the first control side connecting section 21c, it becomes easier to form the first control layer 21 on the first substrate 11.

[0172] Furthermore, the first drive layer 24 consists of a single member in which the first drive-side wiring section 24a, the first drive-side bypass section 24b, and the first drive-side connecting section 24c are integrally formed. With this configuration, for example, compared to a configuration in which the first drive-side wiring section 24a, the first drive-side bypass section 24b, and the first drive-side connecting section 24c are formed individually and wires are used to connect the first drive-side wiring section 24a, the first drive-side bypass section 24b, and the first drive-side connecting section 24c, it becomes easier to form the first drive layer 24 on the second substrate 12.

[0173] Furthermore, the second drive layer 27 consists of a single component in which the second drive-side wiring section 27a, the second drive-side bypass section 27b, and the second drive-side connecting section 27c are integrally formed. With this configuration, for example, compared to a configuration in which the second drive-side wiring section 27a, the second drive-side bypass section 27b, and the second drive-side connecting section 27c are formed individually and wires are used to connect the second drive-side wiring section 27a, the second drive-side bypass section 27b, and the second drive-side connecting section 27c, it becomes easier to form the second drive layer 27 on the first substrate 11.

[0174] Furthermore, the second control layer 26 consists of a single component in which the second control-side wiring section 26a, the second control-side bypass section 26b, and the second control-side connecting section 26c are integrally formed. With this configuration, for example, compared to a configuration in which the second control-side wiring section 26a, the second control-side bypass section 26b, and the second control-side connecting section 26c are formed individually and wires are used to connect the second control-side wiring section 26a, the second control-side bypass section 26b, and the second control-side connecting section 26c, it becomes easier to form the second control layer 26 on the second substrate 12.

[0175] (1-4) In the vertical direction Y, the first drive layer 23 is positioned on the first mounting layer 13A side of the first control layer 21. With this configuration, the length of the first drive-side connecting member 33A that connects the first drive layer 23 to the source electrode 42 of each first power semiconductor element 40A of the first substrate 11 can be shortened. Therefore, the inductance caused by the first drive-side connecting member 33A can be reduced.

[0176] Furthermore, in the vertical direction Y, the first drive layer 24 is positioned closer to the first mounting layer 13B than the first control layer 22. This configuration allows for a shorter length of the first drive-side connecting member 33A that connects the first drive layer 24 to the source electrodes 42 of each first power semiconductor element 40A on the second substrate 12. Consequently, the inductance caused by the first drive-side connecting member 33A can be reduced.

[0177] Furthermore, in the vertical direction Y, the second drive layer 27 is positioned closer to the conductive layer 15A than the second control layer 25. This configuration allows for a shorter length of the second drive-side connecting member 33B that connects the second drive layer 27 to the source electrode 42 of each second power semiconductor element 40B on the first substrate 11. Consequently, the inductance caused by the second drive-side connecting member 33B can be reduced.

[0178] Furthermore, in the vertical direction Y, the second drive layer 28 is positioned closer to the conductive layer 15B than the second control layer 26. This configuration allows for a shorter length of the second drive-side connecting member 33B that connects the second drive layer 28 to the source electrodes 42 of each second power semiconductor element 40B on the second substrate 12. Consequently, the inductance caused by the second drive-side connecting member 33B can be reduced.

[0179] (1-5) The first control-side bypass portion 21b of the first control layer 21 is located on the opposite side of the first drive layer 23 from the first control-side wiring portion 21a in the vertical direction Y. With this configuration, the first control-side bypass portion 21b is located on the side wall 81A side of the case 80, that is, on the side closer to the first control terminal 53A in the vertical direction Y. Therefore, the length of the first control terminal-side connecting member 35A that connects the first control-side connection portion 21d formed at the tip of the first control-side bypass portion 21b to the first control terminal 53A can be shortened. Consequently, the inductance caused by the first control terminal-side connecting member 35A can be reduced.

[0180] Furthermore, the second control-side bypass portion 26b of the second control layer 26 is positioned on the opposite side of the second drive layer 28 from the second control-side wiring portion 26a in the vertical direction Y. With this configuration, the second control-side bypass portion 26b is positioned on the side wall 81B side of the case 80, that is, on the side closer to the second control terminal 53B in the vertical direction Y. Therefore, the length of the second control terminal-side connecting member 35B that connects the second control-side connection portion 26d formed at the tip of the second control-side bypass portion 26b to the second control terminal 53B can be shortened. Consequently, the inductance caused by the second control terminal-side connecting member 35B can be reduced.

[0181] (1-6) The first drive-side bypass portion 24b of the first drive layer 24 is positioned in the vertical direction Y on the opposite side from the first drive-side wiring portion 24a relative to the first control layer 22. With this configuration, the first drive-side bypass portion 24b is positioned on the side wall 81A side of the case 80, that is, on the side closer to the first detection terminal 54A in the vertical direction Y. Therefore, the length of the first detection terminal side connecting member 36A that connects the first drive-side connection portion 24d formed at the tip of the first drive-side bypass portion 24b to the first detection terminal 54A can be shortened. Consequently, the inductance caused by the first detection terminal side connecting member 36A can be reduced.

[0182] Furthermore, the second drive-side bypass portion 27b of the second drive layer 27 is positioned on the opposite side of the second drive-side wiring portion 27a from the second control layer 25 in the vertical direction Y. With this configuration, the second drive-side bypass portion 27b is positioned on the side wall 81A side of the case 80, that is, on the side closer to the second detection terminal 54B in the vertical direction Y. Therefore, the length of the second detection terminal side connecting member 36B that connects the second drive-side connection portion 27d formed at the tip of the second drive-side bypass portion 27b to the second detection terminal 54B can be shortened. Consequently, the inductance caused by the second detection terminal side connecting member 36B can be reduced.

[0183] (1-7) The first control-side bypass portion 21b of the first control layer 21 is not connected to the first control-side connecting member 32A. The first control-side connecting member 32A is connected to the first control-side wiring portion 21a. With this configuration, the length of the first control-side conductive path between the gate electrode 43 and the first control terminal 53A of the first power semiconductor element 40A on the first substrate 11 increases sequentially from the first power semiconductor element 40Ab on the third substrate side surface 11c side to the first power semiconductor element 40Aa on the fourth substrate side surface 11d side among the multiple first power semiconductor elements 40A on the first substrate 11. On the other hand, since the length of the first drive-side conductive path between the source electrode 42 and the first detection terminal 54A of the first power semiconductor element 40A on the first substrate 11 increases sequentially from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab, variations in the total length of the first control-side conductive path and the first drive-side conductive path in the multiple first power semiconductor elements 40A on the first substrate 11 can be suppressed.

[0184] Furthermore, the first drive-side connecting member 33A is not connected to the first drive-side bypass portion 24b of the first drive layer 24. The first drive-side connecting member 33A is connected to the first drive-side wiring portion 24a. With this configuration, the length of the first drive-side conductive path between the source electrode 42 of the first power semiconductor element 40A and the first detection terminal 54A increases sequentially from the first power semiconductor element 40Ad on the fourth substrate side surface 12d side to the first power semiconductor element 40Ac on the third substrate side surface 12c side among the multiple first power semiconductor elements 40A on the second substrate 12. On the other hand, the length of the first control-side conductive path between the gate electrode 43 and the first control terminal 53A of the first power semiconductor element 40A on the second substrate 12 increases sequentially from the first power semiconductor element 40Ac toward the first power semiconductor element 40Ad. Therefore, variations in the total length of the first control-side conductive path and the first drive-side conductive path in multiple first power semiconductor elements 40A on the second substrate 12 can be suppressed.

[0185] Furthermore, the second drive-side connecting member 33B is not connected to the second drive-side bypass portion 27b of the second drive layer 27. The second drive-side connecting member 33B is connected to the second drive-side wiring portion 27a. With this configuration, the length of the second drive-side conductive path between the source electrode 42 of the second power semiconductor element 40B of the first substrate 11 and the second detection terminal 54B increases sequentially from the second power semiconductor element 40Bb closest to the third substrate side surface 11c to the second power semiconductor element 40Ba closest to the fourth substrate side surface 11d among the multiple second power semiconductor elements 40B of the first substrate 11. On the other hand, the length of the second control-side conductive path between the gate electrode 43 and the second control terminal 53B of the second power semiconductor element 40B on the first substrate 11 increases sequentially from the second power semiconductor element 40Ba towards the second power semiconductor element 40Bb. Therefore, variations in the total length of the second control-side conductive path and the second drive-side conductive path in multiple second power semiconductor elements 40B on the first substrate 11 can be suppressed.

[0186] Furthermore, the second control-side connecting member 32B is not connected to the second control-side bypass portion 26b of the second control layer 26. The second control-side connecting member 32B is connected to the second control-side wiring portion 26a. With this configuration, the length of the second control-side conductive path between the gate electrode 43 and the second control terminal 53B of the second power semiconductor element 40B on the second substrate 12 increases sequentially from the second power semiconductor element 40Bd closest to the fourth substrate side surface 12d to the second power semiconductor element 40Bc closest to the third substrate side surface 12c among the multiple second power semiconductor elements 40B on the second substrate 12. On the other hand, since the length of the second drive-side conductive path between the source electrode 42 and the second detection terminal 54B of the second power semiconductor element 40B on the second substrate 12 increases sequentially from the second power semiconductor element 40Bc towards the second power semiconductor element 40Bd, variations in the total length of the second control-side conductive path and the second drive-side conductive path in multiple second power semiconductor elements 40B on the second substrate 12 can be suppressed.

[0187] (1-8) The first control-side connecting members 32A, each connected to a plurality of first power semiconductor elements 40A, extend along the vertical direction Y. The first drive-side connecting members 33A, each connected to a plurality of first power semiconductor elements 40A, extend along the vertical direction Y. The second control-side connecting members 32B, each connected to a plurality of second power semiconductor elements 40B, extend along the vertical direction Y. The second drive-side connecting members 33B, each connected to a plurality of second power semiconductor elements 40B, extend along the vertical direction Y. With these configurations, each connecting member 32A, 32B, 33A, and 33B can be easily formed by wire bonding.

[0188] (1-9) The first control-side connection portion 21d of the first control layer 21 extends in the vertical direction Y and overlaps with the first control layer 22 when viewed from the horizontal direction X. Therefore, the first control layer connecting member 93A that connects the first control-side connection portion 21d and the first control layer 22 is easily formed along the horizontal direction X.

[0189] Furthermore, the first drive-side connection portion 24d of the first drive layer 24 extends in the vertical direction Y and overlaps with the first drive layer 23 when viewed from the horizontal direction X. Therefore, the first drive layer connecting member 94A that connects the first drive-side connection portion 24d and the first drive layer 23 is easily formed along the horizontal direction X.

[0190] Furthermore, the second drive-side connection portion 27d of the second drive layer 27 extends in the vertical direction Y and overlaps with the second drive layer 28 when viewed from the horizontal direction X. Therefore, the second drive layer connecting member 94B that connects the second drive-side connection portion 27d and the second drive layer 28 is easily formed along the horizontal direction X.

[0191] Furthermore, the second control-side connection portion 26d of the second control layer 26 extends in the vertical direction Y and overlaps with the second control layer 25 when viewed from the horizontal direction X. Therefore, the second control layer connecting member 93B that connects the second control-side connection portion 26d and the second control layer 25 is easily formed along the horizontal direction X.

[0192] [Second Embodiment] The power module 1B of the second embodiment will be described with reference to Figures 26 to 32. Compared to the power module 1A of the first embodiment, the power module 1B of this embodiment differs mainly in the configuration of the control layer and the drive layer. In the following, the differences from the power module 1A of the first embodiment will be described in detail, and components common to the power module 1A of the first embodiment will be given the same reference numerals, and their descriptions may be omitted. Note that the dashed lines in Figures 28, 29, 31, and 32 are auxiliary lines to clarify the positional relationship of each control layer and each drive layer.

[0193] As shown in Figures 26 to 28, the first control layer 21 has a first control-side wiring section 21a, a first control-side bypass section 21b, and a first control-side connecting section 21c. In this embodiment, the first control-side wiring section 21a, the first control-side bypass section 21b, and the first control-side connecting section 21c are formed individually. The first control-side wiring section 21a and the first control-side bypass section 21b are each made of, for example, copper foil. The first control-side connecting section 21c is made of, for example, wire formed by wire bonding. The first control-side connecting section 21c is made of, for example, Au, Au alloy, Al, Al alloy, Cu, or Cu alloy.

[0194] The first control-side wiring section 21a and the first control-side bypass section 21b each extend in the lateral direction X. The first control-side bypass section 21b is positioned in the vertical direction Y on the opposite side from the first drive layer 23 to the first control-side wiring section 21a. The end of the first control-side wiring section 21a on the fourth substrate side 11d side of the first substrate 11 and the end of the first control-side bypass section 21b on the fourth substrate side 11d side of the first substrate 11 are aligned in the lateral direction X. These ends are aligned with the interlayer connection section 13c of the first mounting layer 13A when viewed from the vertical direction Y. That is, these ends are located on the fourth substrate side 11d side of the first substrate 11, more so than the first power semiconductor element 40Aa on the fourth substrate side 11d side of the first substrate 11 among the multiple first power semiconductor elements 40A. The length of the first control-side wiring section 21a in the lateral direction X is longer than the length of the first control-side bypass section 21b in the lateral direction X. That is, the end of the first control-side wiring section 21a on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X is located on the third substrate side surface 11c side of the first control-side bypass section 21b on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X.

[0195] The first control-side wiring section 21a is formed to overlap with a plurality of first power semiconductor elements 40A when viewed from the vertical direction Y. In the horizontal direction X, the end of the first control-side wiring section 21a on the third substrate side surface 11c of the first substrate 11 is formed to overlap with the end of the first power semiconductor element 40Ab on the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X, which is the first power semiconductor element 40A closest to the third substrate side surface 11c of the first substrate 11.

[0196] The first control-side wiring section 21a is connected to a first control-side connecting member 32A, which is connected to each of the multiple first power semiconductor elements 40A on the first substrate 11. The multiple first control-side connecting members 32A are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. The first control-side connecting members 32A connected to the four first power semiconductor elements 40A, excluding the first power semiconductor element 40Ab which is located closest to the third substrate side surface 11c of the first substrate 11, each extend along the vertical direction Y in a plan view. Since the gate electrode 43 of the first power semiconductor element 40Ab is located closer to the third substrate side surface 11c of the first substrate 11 than the first control-side wiring section 21a, the first control-side connecting member 32A connected to the first power semiconductor element 40Ab extends diagonally toward the fourth substrate side surface 11d as it approaches the first substrate side surface 11a of the first substrate 11.

[0197] The first control-side bypass portion 21b is formed so as to overlap with the first power semiconductor elements 40A other than the first power semiconductor element 40Ab when viewed from the vertical direction Y. That is, the end of the first control-side bypass portion 21b on the third substrate side surface 11c side of the first substrate 11 in the horizontal direction X is located on the fourth substrate side surface 11d side of the first substrate 11 rather than the first power semiconductor element 40Ab. As can be seen from Figures 26 to 28, the first control-side bypass portion 21b is not connected to the first control-side connecting member 32A.

[0198] The first control-side connecting portion 21c connects the end of the first control-side wiring portion 21a on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X, and the end of the first control-side bypass portion 21b on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X. This electrically connects the first control-side wiring portion 21a and the first control-side bypass portion 21b. The first control-side connecting portion 21c is positioned on the third substrate side surface 11c side of the first substrate 11 than the first control-side connecting member 32A connected to the first power semiconductor element 40Ab. The first control-side connecting portion 21c extends diagonally toward the fourth substrate side surface 11d side as it approaches the first substrate side surface 11a side of the first substrate 11.

[0199] The first drive layer 23 extends along the lateral direction X. The first drive layer 23 is positioned adjacent to the first mounting layer 13A in the vertical direction Y. In the vertical direction Y, the first drive layer 23 is positioned between the first control-side wiring section 21a and the first mounting layer 13A. The length of the first drive layer 23 in the lateral direction X is longer than the length of the first control-side wiring section 21a and the length of the first control-side bypass section 21b in the lateral direction X. In the lateral direction X, the end of the first drive layer 23 on the fourth substrate side surface 11d of the first substrate 11 is aligned in the vertical direction Y with the end of the first control-side wiring section 21a on the fourth substrate side surface 11d and the end of the first control-side bypass section 21b on the fourth substrate side surface 11d. Viewed from the vertical direction Y, the first drive layer 23 overlaps with the multiple first power semiconductor elements 40A of the first substrate 11. Furthermore, when viewed from the vertical direction Y, the first drive layer 23 overlaps with the thermistor mounting layer 16.

[0200] The first drive layer 23 is connected to a first drive-side connecting member 33A, which is connected to each of the multiple first power semiconductor elements 40A on the first substrate 11. The multiple first drive-side connecting members 33A are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. The first drive-side connecting members 33A connected to the four first power semiconductor elements 40A, excluding the first power semiconductor element 40Ab which is located closest to the third substrate side surface 11c of the first substrate 11, each extend along the vertical direction Y in a plan view. The first drive-side connecting member 33A connected to the first power semiconductor element 40Ab extends diagonally toward the fourth substrate side surface 11d as it approaches the first substrate side surface 11a of the first substrate 11.

[0201] The thermistor mounting layer 16 has a different orientation relative to the first substrate 11 compared to the thermistor mounting layer 16 of the first embodiment. The thermistor mounting layer 16 is positioned so as to be rotated 90° clockwise relative to the thermistor mounting layer 16 of the first embodiment. When viewed from the lateral direction X, the thermistor mounting layer 16 overlaps with the first control layer 21. In the vertical direction Y, the thermistor mounting layer 16 is positioned closer to the first substrate side surface 11a of the first substrate 11 than the first drive layer 23.

[0202] As shown in Figures 27 and 29, the first drive layer 24 has a first drive-side wiring section 24a, a first drive-side bypass section 24b, a first drive-side connecting section 24c, and a first drive-side connection section 24d. In this embodiment, the first drive-side wiring section 24a, the first drive-side bypass section 24b, and the first drive-side connecting section 24c are formed individually, while the first drive-side bypass section 24b and the first drive-side connection section 24d are formed integrally. The first drive-side wiring section 24a, the first drive-side bypass section 24b, and the first drive-side connection section 24d are each made of, for example, copper foil. The first drive-side connecting section 24c is made of, for example, a wire formed by wire bonding. The first drive-side connecting section 24c is made of, for example, Au, Au alloy, Al, Al alloy, Cu, or Cu alloy.

[0203] The first drive-side wiring section 24a and the first drive-side bypass section 24b each extend in the lateral direction X. In the vertical direction Y, the first drive-side bypass section 24b is positioned on the opposite side of the first drive layer 24 from the first drive-side wiring section 24a. In the lateral direction X, the end of the first drive-side wiring section 24a on the fourth substrate side 12d side of the second substrate 12 and the end of the first drive-side bypass section 24b on the fourth substrate side 12d side of the second substrate 12 are aligned in the lateral direction X. When viewed from the vertical direction Y, these ends are adjacent to the interlayer connection section 13f of the first mounting layer 13B. The length of the first drive-side bypass section 24b in the lateral direction X is slightly longer than the length of the first drive-side wiring section 24a in the lateral direction X.

[0204] The first drive-side wiring section 24a is formed to overlap with a plurality of first power semiconductor elements 40A when viewed from the vertical direction Y. In the horizontal direction X, the end of the first drive-side wiring section 24a on the fourth substrate side surface 12d of the second substrate 12 is formed to overlap with the end of the first power semiconductor element 40Ad on the third substrate side surface 12c of the second substrate 12 in the horizontal direction X, which is the first power semiconductor element 40Ad on the fourth substrate side surface 12d of the second substrate 12 among the plurality of first power semiconductor elements 40A.

[0205] The first drive-side wiring section 24a is connected to a first drive-side connecting member 33A, which is connected to each of the multiple first power semiconductor elements 40A on the second substrate 12. The multiple first drive-side connecting members 33A are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. The first drive-side connecting members 33A connected to the four first power semiconductor elements 40A other than the first power semiconductor element 40Ad each extend along the vertical direction Y in a plan view. Since the gate electrode 43 of the first power semiconductor element 40Ad is located on the fourth substrate side surface 12d side of the second substrate 12 rather than the first drive-side wiring section 24a, the first drive-side connecting member 33A connected to the first power semiconductor element 40Ad extends diagonally toward the third substrate side surface 12c side as it approaches the first substrate side surface 12a side of the second substrate 12.

[0206] The first drive-side bypass portion 24b is formed so as to overlap with the first power semiconductor element 40A when viewed from the vertical direction Y. As can be seen from Figures 26, 27, and 29, the first drive-side connecting member 33A is not connected to the first drive-side bypass portion 24b.

[0207] The first drive-side connecting portion 24c connects the portion of the first drive-side wiring portion 24a on the fourth substrate side 12d side of the second substrate 12 in the lateral direction X, and the portion of the first drive-side bypass portion 24b on the fourth substrate side 12d side of the second substrate 12 in the lateral direction X. In a plan view, the first drive-side connecting portion 24c extends along the vertical direction Y. The first drive-side connecting portion 24c is formed to straddle the first control layer 22.

[0208] The first drive-side connection portion 24d is formed at the end of the first drive-side bypass portion 24b in the lateral direction X that is on the side surface 12c of the second substrate 12. In the lateral direction X, the first drive-side connection portion 24d is located on the side surface 12c of the second substrate 12 that is on the side surface 12c of the second substrate 12 that is on the side surface 12c of the second substrate 12 that is on the side surface 12c of the first drive-side wiring portion 24a. The first drive-side connection portion 24d extends in the vertical direction Y. In the vertical direction Y, the first drive-side connection portion 24d is positioned adjacent to the interlayer connection portion 13f of the first mounting layer 13B. The width dimension of the first drive-side connection portion 24d (the dimension of the first drive-side connection portion 24d in the lateral direction X) is greater than the width dimension of the first drive-side bypass portion 24b (the dimension of the first drive-side bypass portion 24b in the vertical direction Y). The first drive-side connection portion 24d is positioned such that the edge of the first drive-side connection portion 24d on the first mounting layer 13B side in the vertical direction Y is aligned in the vertical direction Y with the edge of the first drive-side wiring portion 24a on the first mounting layer 13B side in the vertical direction Y, and is spaced apart from the first drive-side wiring portion 24a in the horizontal direction X.

[0209] The first control layer 22 is positioned in the vertical direction Y between the first drive-side wiring section 24a and the first drive-side bypass section 24b in the first drive layer 24. The first control layer 22 extends along the horizontal direction X. In plan view, the shape of the first control layer 22 is a narrow strip. In this embodiment, the width dimension of the first control layer 22 (the vertical direction Y dimension of the first control layer 22) is equal to the width dimension of the first drive-side wiring section 24a in the first drive layer 24 (the vertical direction Y dimension of the first drive-side wiring section 24a). Also, the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side bypass section 24b in the first drive layer 24 (the vertical direction Y dimension of the first drive-side bypass section 24b).

[0210] Here, if the difference between the vertical Y dimension of the first control layer 22 and the vertical Y dimension of the first drive-side wiring section 24a in the first drive layer 24 is, for example, within 5% of the vertical Y dimension of the first drive-side wiring section 24a in the first drive layer 24, then the width dimension of the first control layer 22 can be said to be equal to the width dimension of the first drive-side wiring section 24a in the first drive layer 24. Also, if the difference between the vertical Y dimension of the first control layer 22 and the vertical Y dimension of the first drive-side bypass section 24b in the first drive layer 24 is, for example, within 5% of the vertical Y dimension of the first drive-side bypass section 24b in the first drive layer 24, then the width dimension of the first control layer 22 can be said to be equal to the width dimension of the first drive-side bypass section 24b in the first drive layer 24.

[0211] The length of the first control layer 22 in the lateral direction X is equal to the length of the first drive-side wiring portion 24a in the lateral direction X of the first drive layer 24. Viewed from the vertical direction Y, the end of the first control layer 22 on the third substrate side 12c of the second substrate 12 in the lateral direction X is aligned with the end 24e of the first drive-side wiring portion 24a of the first drive layer 24. Also, the end of the first control layer 22 on the third substrate side 12c of the second substrate 12 in the lateral direction X is adjacent to the interlayer connection portion 13f of the first mounting layer 13B in the lateral direction X. Viewed from the lateral direction X, the first control layer 22 overlaps with the first drive-side connection portion 24d of the first drive layer 24.

[0212] The first control layer 22 is connected to a first control-side connecting member 32A, which is connected to each of the multiple first power semiconductor elements 40A on the second substrate 12. The multiple first control-side connecting members 32A are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. The first control-side connecting members 32A connected to the four first power semiconductor elements 40A, excluding the first power semiconductor element 40Ad which is located closest to the fourth substrate side surface 12d of the second substrate 12, each extend along the vertical direction Y in a plan view. Because the gate electrode 43 of the first power semiconductor element 40Ad is located closer to the fourth substrate side surface 12d of the second substrate 12 than the first control layer 22, the first control-side connecting member 32A connected to the first power semiconductor element 40Ad extends diagonally toward the third substrate side surface 12c as it approaches the first substrate side surface 12a of the second substrate 12.

[0213] As shown in Figures 26 to 29, the first control terminal side connecting member 35A is connected to the portion of the first control side bypass 21b in the lateral direction X that is on the fourth substrate side surface 11d side of the first substrate 11. Viewed from the vertical direction Y, the first control terminal side connecting member 35A is formed to overlap with the first power semiconductor element 40Aa.

[0214] A first control layer connecting member 93A is connected to the end of the first control-side bypass portion 21b in the lateral direction X that is on the fourth substrate side surface 11d side of the first substrate 11. The first control layer connecting member 93A is located on the fourth substrate side surface 11d side of the first substrate 11, further than the first power semiconductor element 40Aa. The first control layer connecting member 93A is also connected to the end of the first control layer 22 in the lateral direction X that is on the third substrate side surface 12c side of the second substrate 12. In the vertical direction Y, the first control-side bypass portion 21b is located on the side wall 81A side of the case 80, further than the first control layer 22. Therefore, in a plan view, the first control layer connecting member 93A extends diagonally toward the side wall 81A side as it moves from the first control layer 22 toward the first control layer 21. As can be seen from Figure 26, the first control layer connecting member 93A is formed to straddle the first drive-side connecting portion 24d of the first drive layer 24 in the lateral direction X.

[0215] The first drive-side bypass portion 24b is connected to the first detection terminal-side connecting member 36A. More specifically, the first detection terminal-side connecting member 36A is connected to the end of the first drive-side bypass portion 24b on the side of the first drive-side connecting portion 24d in the lateral direction X.

[0216] A first drive layer connecting member 94A is connected to the end of the first drive layer 23 on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X. The first drive layer connecting member 94A is connected to the end of the first drive side connecting portion 24d on the first mounting layer 13B side in the vertical direction Y. In a plan view, the first drive layer connecting member 94A extends along the lateral direction X.

[0217] As shown in Figures 30 and 31, the second drive layer 27 has a second drive-side wiring section 27a, a second drive-side bypass section 27b, a second drive-side connecting section 27c, and a second drive-side connection section 27d. In this embodiment, the second drive-side wiring section 27a, the second drive-side bypass section 27b, and the second drive-side connecting section 27c are formed individually, while the second drive-side bypass section 27b and the second drive-side connection section 27d are formed integrally. The second drive-side wiring section 27a, the second drive-side bypass section 27b, and the second drive-side connection section 27d are each made of, for example, copper foil. The second drive-side connecting section 27c is a wire formed by wire bonding. In plan view, the shapes of the second drive-side wiring section 27a and the second drive-side bypass section 27b are narrow strips.

[0218] The second drive-side wiring portion 27a extends along the lateral direction X. In the vertical direction Y, the second drive-side wiring portion 27a is positioned adjacent to the conductive layer 15A. In the lateral direction X, the end portion 27e of the second drive-side wiring portion 27a on the fourth substrate side surface 11d side of the first substrate 11 is located on the fourth substrate side surface 11d side of the first substrate 11, further than the second power semiconductor element 40Ba, which is the second power semiconductor element 40B, that is closest to the fourth substrate side surface 11d side of the first substrate 11, in the lateral direction X. In the lateral direction X, the end portion 27f of the second drive-side wiring portion 27a on the third substrate side surface 11c side of the first substrate 11 is located on the third substrate side surface 11c side of the first substrate 11, further than the second power semiconductor element 40Bb, which is the second power semiconductor element 40B, that is closest to the third substrate side surface 11c side of the first substrate 11, in the lateral direction X. In other words, when viewed from the vertical direction Y, the second drive-side wiring section 27a extends in the lateral direction X so as to overlap with all of the second power semiconductor elements 40B arranged on the first substrate 11.

[0219] The second drive-side wiring section 27a is connected to a second drive-side connecting member 33B, which is connected to each of the multiple second power semiconductor elements 40B. The multiple second drive-side connecting members 33B are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple second power semiconductor elements 40B. Each of the second drive-side connecting members 33B connected to the multiple second power semiconductor elements 40B extends along the vertical direction Y in a plan view.

[0220] The second drive-side bypass section 27b is positioned spaced apart from the second drive-side wiring section 27a in the vertical direction Y. In the vertical direction Y, the second drive-side bypass section 27b is positioned on the opposite side from the conductive layer 15A side to the second drive-side wiring section 27a. In the vertical direction Y, the second drive-side bypass section 27b is positioned on the second substrate side surface 11b side of the first substrate 11 compared to the second control layer 25. In the vertical direction Y, the second drive-side bypass section 27b is positioned adjacent to the second substrate side surface 11b of the first substrate 11. The second drive-side bypass section 27b extends along the horizontal direction X. The length of the second drive-side bypass section 27b in the horizontal direction X is slightly longer than the length of the second drive-side wiring section 27a in the horizontal direction X. As can be seen from Figure 31, the second drive-side connecting member 33B is not connected to the second drive-side bypass section 27b.

[0221] The second drive-side connecting portion 27c connects the second drive-side wiring portion 27a and the second drive-side bypass portion 27b. More specifically, the second drive-side connecting portion 27c connects the end of the second drive-side wiring portion 27a on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X, and the end of the second drive-side bypass portion 27b on the third substrate side surface 11c side of the second drive-side connecting portion 27b in the lateral direction X. The second drive-side connecting portion 27c extends in the vertical direction Y. Viewed from the vertical direction Y, the second drive-side connecting portion 27c is positioned to overlap with the end of the second power semiconductor element 40Bb that is closest to the third substrate side surface 11c side of the first substrate 11 in the lateral direction X. In the lateral direction X, the second drive-side connecting portion 27c is positioned on the third substrate side surface 11c of the first substrate 11, more so than the second control-side connecting member 32B and the second drive-side connecting member 33B, which are connected to the second power semiconductor element 40Bb.

[0222] The second drive-side connection portion 27d is formed at the tip of the second drive-side bypass portion 27b. In the lateral direction X, the second drive-side connection portion 27d is located on the fourth substrate side surface 11d side of the first substrate 11 than the second drive-side wiring portion 27a. The second drive-side connection portion 27d extends in the vertical direction Y. The width dimension of the second drive-side connection portion 27d (the lateral direction X dimension of the second drive-side connection portion 27d) is larger than the width dimension of the second drive-side bypass portion 27b (the vertical direction Y dimension of the second drive-side bypass portion 27b). The second drive-side connection portion 27d is positioned spaced apart from the second drive-side wiring portion 27a in the lateral direction X, with the edge of the second drive-side connection portion 27d on the conductive layer 15A side in the vertical direction Y being aligned in the vertical direction Y with the edge of the second drive-side wiring portion 27a on the conductive layer 15A side in the vertical direction Y.

[0223] The second control layer 25 extends along the lateral direction X. In plan view, the shape of the second control layer 25 is a narrow strip. In the vertical direction Y, the second control layer 25 is positioned between the second drive-side wiring section 27a and the second drive-side bypass section 27b. In this embodiment, the width dimension of the second control layer 25 (the vertical Y dimension of the second control layer 25) is equal to the width dimension of the second drive-side wiring section 27a in the second drive layer 27 (the vertical Y dimension of the second drive-side wiring section 27a). Also, the width dimension of the second control layer 25 is equal to the width dimension of the second drive-side bypass section 27b in the second drive layer 27 (the vertical Y dimension of the second drive-side bypass section 27b).

[0224] Here, if the difference between the vertical Y dimension of the second control layer 25 and the vertical Y dimension of the second drive-side wiring section 27a in the second drive layer 27 is, for example, within 5% of the vertical Y dimension of the second drive-side wiring section 27a in the second drive layer 27, then the width dimension of the second control layer 25 can be said to be equal to the width dimension of the second drive-side wiring section 27a in the second drive layer 27. Also, if the difference between the vertical Y dimension of the second control layer 25 and the vertical Y dimension of the second drive-side bypass section 27b in the second drive layer 27 is, for example, within 5% of the vertical Y dimension of the second drive-side bypass section 27b in the second drive layer 27, then the width dimension of the second control layer 25 can be said to be equal to the width dimension of the second drive-side bypass section 27b in the second drive layer 27.

[0225] The length of the second control layer 25 in the lateral direction X is equal to the length of the second drive-side wiring section 27a in the second drive layer 27 in the lateral direction X. In the vertical direction Y, both ends of the second control layer 25 in the lateral direction X are aligned with both ends of the second drive-side wiring section 27a in the lateral direction X of the second drive layer 27.

[0226] The second control layer 25 is connected to a second control-side connecting member 32B, which is connected to each of the multiple second power semiconductor elements 40B. The multiple second control-side connecting members 32B are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple second power semiconductor elements 40B. The second control-side connecting members 32B connected to the multiple second power semiconductor elements 40B extend along the vertical direction Y in a plan view. A first drive layer connecting member 94A is connected to the end of the first drive layer 23 on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X.

[0227] As shown in Figures 30 and 32, the second control layer 26 has a second control-side wiring section 26a, a second control-side bypass section 26b, and a second control-side connecting section 26c. In this embodiment, the second control-side wiring section 26a, the second control-side bypass section 26b, and the second control-side connecting section 26c are formed individually. The second control-side wiring section 26a, the second control-side bypass section 26b, and the second control-side connecting section 26d are each made of, for example, copper foil. The second control-side connecting section 26c is a wire formed by wire bonding. In plan view, the shapes of the second control-side wiring section 26a and the second control-side bypass section 26b are narrow strips.

[0228] The second control-side wiring section 26a extends along the lateral direction X. In the lateral direction X, the end 26e of the second control-side wiring section 26a on the third substrate side surface 12c side of the second substrate 12 is located on the third substrate side surface 12c side of the second substrate 12, which is further along the lateral direction X than the second power semiconductor element 40Bc that is closest to the third substrate side surface 12c side of the multiple second power semiconductor elements 40B. In the lateral direction X, the end 26f of the second control-side wiring section 26a on the fourth substrate side surface 12d side of the second substrate 12 is located on the fourth substrate side surface 12d side of the second substrate 12, which is further along the lateral direction X than the second power semiconductor element 40Bd that is closest to the fourth substrate side surface 12d side of the multiple second power semiconductor elements 40B.

[0229] The second control-side wiring section 26a is connected to a second control-side connecting member 32B, which is connected to each of the multiple second power semiconductor elements 40B. The multiple second control-side connecting members 32B are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple second power semiconductor elements 40B. The second control-side connecting members 32B connected to the multiple second power semiconductor elements 40B extend along the vertical direction Y in a plan view.

[0230] The second control-side bypass section 26b is positioned spaced apart from the second control-side wiring section 26a in the vertical direction Y. In the vertical direction Y, the second control-side bypass section 26b is positioned on the opposite side from the second drive layer 28 to the second control-side wiring section 26a. In the vertical direction Y, the second control-side bypass section 26b is positioned adjacent to the second substrate side surface 12b of the second substrate 12. The second control-side bypass section 26b extends along the horizontal direction X. The length of the second control-side bypass section 26b in the horizontal direction X is equal to the length of the second control-side wiring section 26a in the horizontal direction X. Both ends of the second control-side bypass section 26b in the horizontal direction X are aligned with both ends of the second control-side wiring section 26a in the horizontal direction X. As can be seen from Figure 32, the second control-side connecting member 32B is not connected to the second control-side bypass section 26b.

[0231] The second control-side connecting portion 26c connects the second control-side wiring portion 26a and the second control-side bypass portion 26b. More specifically, the second control-side connecting portion 26c connects the end of the second control-side wiring portion 26a on the fourth substrate side 12d side of the second substrate 12 in the lateral direction X, and the end of the second control-side bypass portion 26b on the fourth substrate side 12d side of the second substrate 12 in the lateral direction X. The second control-side connecting portion 26c extends in the vertical direction Y. Viewed from the vertical direction Y, the second control-side connecting portion 26c is positioned to overlap with the second power semiconductor element 40Bd that is closest to the fourth substrate side 12d side of the second substrate 12 in the lateral direction X among the multiple second power semiconductor elements 40B. In the lateral direction X, the second control-side connection portion 26c is located on the fourth substrate side 12d side of the second substrate 12, more so than the second control-side connecting member 32B and the second drive-side connecting member 33B connected to the second power semiconductor element 40Bd.

[0232] The second drive layer 28 extends along the lateral direction X. In plan view, the shape of the second drive layer 28 is a narrow strip. In the vertical direction Y, the second drive layer 28 is positioned adjacent to the conductive layer 15B. In this embodiment, the width dimension of the second drive layer 28 (the vertical dimension Y of the second drive layer 28) is equal to the width dimension of the second control side wiring portion 26a in the second control layer 26 (the vertical dimension Y of the second control side wiring portion 26a). Also, the width dimension of the second drive layer 28 is equal to the width dimension of the second control side bypass portion 26b in the second control layer 26 (the vertical dimension Y of the second control side bypass portion 26b).

[0233] Here, if the difference between the vertical Y dimension of the second drive layer 28 and the vertical Y dimension of the second control-side wiring section 26a in the second control layer 26 is, for example, within 5% of the vertical Y dimension of the second control-side wiring section 26a in the second control layer 26, then the width dimension of the second drive layer 28 can be said to be equal to the width dimension of the second control-side wiring section 26a in the second control layer 26. Also, if the difference between the vertical Y dimension of the second drive layer 28 and the vertical Y dimension of the second control-side bypass section 26b in the second control layer 26 is, for example, within 5% of the vertical Y dimension of the second control-side bypass section 26b in the second control layer 26, then the width dimension of the second drive layer 28 can be said to be equal to the width dimension of the second control-side bypass section 26b in the second control layer 26.

[0234] The length of the second drive layer 28 in the lateral direction X is equal to the length of the second control-side wiring section 26a in the second control layer 26 in the lateral direction X. Both ends of the second drive layer 28 in the lateral direction X are aligned with both ends of the second control-side wiring section 26a of the second control layer 26 in the lateral direction X. Also, the length of the second drive layer 28 in the lateral direction X is equal to the length of the second control-side bypass section 26b in the second control layer 26 in the lateral direction X. Both ends of the second drive layer 28 in the lateral direction X are aligned with both ends of the second control-side bypass section 26b of the second control layer 26 in the lateral direction X.

[0235] The second drive layer 28 is connected to a second drive-side connecting member 33B, which is connected to each of the multiple second power semiconductor elements 40B on the second substrate 12. The multiple second drive-side connecting members 33B are spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the multiple second power semiconductor elements 40B. The second drive-side connecting members 33B connected to the multiple second power semiconductor elements 40B extend along the vertical direction Y in a plan view.

[0236] As shown in Figures 30 to 32, the second drive-side bypass portion 27b is connected to the second detection terminal-side connecting member 36B. More specifically, the second detection terminal-side connecting member 36B is connected to the end of the second drive-side bypass portion 27b on the second drive-side connecting portion 27d side in the lateral direction X.

[0237] A second drive layer connecting member 94B is connected to the second drive side connection portion 27d. More specifically, the second drive layer connecting member 94B is connected to the end of the second drive side connection portion 27d on the conductive layer 15A side in the vertical direction Y. In addition, the second drive layer connecting member 94B is connected to the end of the second drive layer 28 on the third substrate side surface 12c side of the second substrate 12 on the lateral direction X. In a plan view, the second drive layer connecting member 94B extends along the lateral direction X.

[0238] The second control side bypass section 26b is connected to the second control terminal side connecting member 35B and the second control layer connecting member 93B, respectively. The second control terminal side connecting member 35B is connected to the portion of the second control side bypass section 26b on the third substrate side surface 12c side of the second substrate 12. The second control layer connecting member 93B is connected to the end portion 26e of the second substrate 12 on the third substrate side surface 12c side of the second control side bypass section 26b on the third substrate side surface 12c side of the second substrate 12. The second control layer connecting member 93B is also connected to the end portion 25x of the second control layer 25 on the fourth substrate side surface 11d side of the first substrate 11 on the first substrate 11 side of the second control layer 25 on the lateral direction X. In the vertical direction Y, since the end 26e of the second control-side bypass portion 26b is located on the second substrate side surface 12b of the second substrate 12 than the end 25x of the second control layer 25, in a plan view, the second control layer connecting member 93B extends diagonally toward the second substrate side surface 12b of the second substrate 12 as it moves from the end 25x of the second control layer 25 toward the end 26e of the second control-side bypass portion 26b. As can be seen from Figure 32, the second control layer connecting member 93B is formed to straddle the second drive-side connecting portion 27d of the second drive layer 27.

[0239] (Conductive path) Next, we will explain the control-side conductive path, which is the first conductive path between each power semiconductor element 40A, 40B and each control terminal 53A, 53B, and the drive-side conductive path, which is the second conductive path between each power semiconductor element 40A, 40B and each detection terminal 54A, 54B.

[0240] As shown in Figure 27, the first control-side conductive path from the gate electrode 43 to the first control terminal 53A of the multiple first power semiconductor elements 40A on the first substrate 11 is composed of the first control-side connecting member 32A, the first control layer 21, and the first control terminal-side connecting member 35A. Therefore, the first control-side conductive path for the multiple first power semiconductor elements 40A on the first substrate 11 becomes progressively longer as you move from the first power semiconductor element 40Ab towards the first power semiconductor element 40Aa. In other words, the difference in length of the first control-side conductive path is greatest for the first power semiconductor element 40Aa, which is the first end power semiconductor element, and the first power semiconductor element 40Ab, which is the second end power semiconductor element, both of which are at opposite ends in the arrangement direction of the multiple first power semiconductor elements 40A. In this case, the length of the first control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Aa, is the longest, and the length of the second control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ab, is the shortest.

[0241] The first drive-side conductive path from the source electrode 42 to the first detection terminal 54A of the multiple first power semiconductor elements 40A on the first substrate 11 is composed of the first drive-side connecting member 33A, the first drive layer 23, the first drive layer connecting member 94A, the first drive-side connecting portion 24d of the first drive layer 24, and the first detection terminal-side connecting member 36A. Therefore, the first drive-side conductive path for the multiple first power semiconductor elements 40A on the first substrate 11 becomes progressively longer as you move from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab. In other words, the difference in length of the first drive-side conductive path is greatest for the first power semiconductor element 40Aa, which is the first end power semiconductor element, and the first power semiconductor element 40Ab, which is the second end power semiconductor element, which are the two ends of the array direction of the multiple first power semiconductor elements 40A. In this case, the length of the first drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Aa, is the shortest, and the length of the second drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ab, is the longest.

[0242] The first control-side conductive path from the gate electrode 43 to the first control terminal 53A of the multiple first power semiconductor elements 40A on the second substrate 12 is composed of the first control-side connecting member 32A, the first control layer 22, the first control layer connecting member 93A, the first control layer 21, and the first control terminal-side connecting member 35A. Therefore, the first control-side conductive path for the multiple first power semiconductor elements 40A on the second substrate 12 becomes progressively longer as you move from the first power semiconductor element 40Ac towards the first power semiconductor element 40Ad. In other words, the difference in length of the first control-side conductive path is greatest for the first power semiconductor element 40Ac, which is the first end power semiconductor element, and the first power semiconductor element 40Ad, which is the second end power semiconductor element, which are the two ends of the array direction of the multiple first power semiconductor elements 40A. In this case, the length of the first end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ac, is the shortest, and the length of the second end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ad, is the longest.

[0243] The first drive-side conductive path from the source electrode 42 to the first detection terminal 54A of the multiple first power semiconductor elements 40A on the second substrate 12 is composed of the first drive-side connecting member 33A, the first drive layer 24, and the first detection terminal-side connecting member 36A. Therefore, the first drive-side conductive path for the multiple first power semiconductor elements 40A on the second substrate 12 becomes progressively longer as you move from the first power semiconductor element 40Ad towards the first power semiconductor element 40Ac. In other words, the difference in length of the first drive-side conductive path for the first power semiconductor element 40Ac, which is the first end power semiconductor element, and the first power semiconductor element 40Ad, which is the second end power semiconductor element, is the largest. In this case, the length of the first end drive-side conductive path, which is the first drive-side conductive path for the first power semiconductor element 40Ac, is the longest, and the length of the second end drive-side conductive path, which is the first drive-side conductive path for the first power semiconductor element 40Ad, is the shortest.

[0244] As described above, in this embodiment, the first control-side bypass section 21b and the first drive-side bypass section 24b are formed to reduce variations in the total length of the first control-side conductive path and the first drive-side conductive path among the multiple first power semiconductor elements 40A. That is, the power module 1B of this embodiment is configured such that the sum of the length of the first control-side conductive path, which is an example of a first conductive path, and the length of the first drive-side conductive path, which is an example of a second conductive path, approaches each other among the multiple first power semiconductor elements 40A, through the first control-side bypass section 21b and the first drive-side bypass section 24b.

[0245] Furthermore, in this embodiment, the first control-side bypass section 21b and the first drive-side bypass section 24b are formed to reduce the variation between the sum of the lengths of the first end control-side conductive path and the first end drive-side conductive path, and the sum of the lengths of the second end control-side conductive path and the second end drive-side conductive path.

[0246] The sum of the length of the first end control-side conductive path and the length of the first end drive-side conductive path is an example of the first sum described in the claims. Similarly, the sum of the length of the second end control-side conductive path and the length of the second end drive-side conductive path is an example of the second sum described in the claims. Therefore, the power module 1B of this embodiment is configured such that the first sum and the second sum are brought closer together by the first control-side bypass section 21b and the first drive-side bypass section 24b.

[0247] As shown in Figure 30, the second control-side conductive path from the gate electrode 43 to the second control terminal 53B of the multiple second power semiconductor elements 40B on the first substrate 11 is composed of the second control-side connecting member 32B, the second control layer 25, the second control layer connecting member 93B, the second control-side connecting portion 26d of the second control layer 26, and the second control terminal-side connecting member 35B. Therefore, the second control-side conductive path, which is an example of a third conductive path for the multiple second power semiconductor elements 40B on the first substrate 11, becomes progressively longer as you move from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in length of the second control-side conductive path is greatest for the second power semiconductor element 40Ba, which is the first end power semiconductor element, and the second power semiconductor element 40Bb, which is the second end power semiconductor element, both of which are at opposite ends in the arrangement direction of the multiple second power semiconductor elements 40B. In this case, the length of the third terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Ba, is the shortest, and the length of the fourth terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bb, is the longest.

[0248] The second drive-side conductive path from the source electrode 42 to the second detection terminal 54B of the multiple second power semiconductor elements 40B on the first substrate 11 is composed of the second drive-side connecting member 33B, the second drive layer 27, and the second detection terminal-side connecting member 36B. Therefore, the second drive-side conductive path, which is an example of a fourth conductive path relating to the multiple second power semiconductor elements 40B on the first substrate 11, becomes progressively longer as it moves from the second power semiconductor element 40Bb towards the second power semiconductor element 40Ba. In other words, the difference in length of the second drive-side conductive path is greatest for the second power semiconductor element 40Ba, which is the first-end power semiconductor element, and the second power semiconductor element 40Bb, which is the second-end power semiconductor element, both of which are the two ends of the array direction of the multiple second power semiconductor elements 40B. In this case, the length of the third-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Ba, is the longest, and the length of the fourth-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Bb, is the shortest.

[0249] The second control-side conductive path from the gate electrode 43 to the second control terminal 53B of the multiple second power semiconductor elements 40B on the second substrate 12 is composed of the second control-side connecting member 32B, the second control layer 26, and the second control terminal-side connecting member 35B. Therefore, the second control-side conductive path, which is an example of a third conductive path for the multiple second power semiconductor elements 40B on the second substrate 12, becomes progressively longer as you move from the second power semiconductor element 40Bd towards the second power semiconductor element 40Bc. In other words, the difference in length of the second control-side conductive path is greatest for the second power semiconductor element 40Bc, which is the first-end power semiconductor element, and the second power semiconductor element 40Bd, which is the second-end power semiconductor element, both of which are the two ends of the array direction of the multiple second power semiconductor elements 40B. In this case, the length of the third terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bc, is the longest, and the length of the fourth terminal control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bd, is the shortest.

[0250] The second drive-side conductive path from the source electrode 42 to the second detection terminal 54B of the multiple second power semiconductor elements 40B on the second substrate 12 is composed of the second drive-side connecting member 33B, the second drive layer 28, the second drive layer connecting member 94B, the second drive-side connecting portion 27d of the second drive layer 27, and the second detection terminal side connecting member 36B. Therefore, the second drive-side conductive path, which is an example of a fourth conductive path for the multiple second power semiconductor elements 40B on the second substrate 12, becomes progressively longer as it moves from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd. In other words, the difference in length of the second drive-side conductive path is greatest for the second power semiconductor element 40Bc, which is the first-end power semiconductor element, and the second power semiconductor element 40Bd, which is the second-end power semiconductor element, both of which are the two ends of the array direction of the multiple second power semiconductor elements 40B. In this case, the length of the third-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Bc, is the shortest, and the length of the fourth-end drive-side conduction path, which is the second drive-side conduction path of the second power semiconductor element 40Bd, is the longest.

[0251] As described above, in this embodiment, the second control-side bypass section 26b and the second drive-side bypass section 27b are formed to reduce variations in the total length of the second control-side conductive path and the second drive-side conductive path among the multiple second power semiconductor elements 40B. That is, the power module 1B of this embodiment is configured such that the sum of the length of the second control-side conductive path, which is an example of a third conductive path, and the length of the second drive-side conductive path, which is an example of a fourth conductive path, approaches each other among the multiple second power semiconductor elements 40B, thanks to the second control-side bypass section 26b and the second drive-side bypass section 27b.

[0252] Furthermore, in this embodiment, the first control-side bypass section 21b and the first drive-side bypass section 24b are formed to reduce the variation between the sum of the lengths of the third-end control-side conductive path and the third-end drive-side conductive path, and the sum of the lengths of the fourth-end control-side conductive path and the fourth-end drive-side conductive path.

[0253] The sum of the length of the third end control-side conductive path and the length of the third end drive-side conductive path is an example of the third sum described in the claims. Similarly, the sum of the length of the fourth end control-side conductive path and the length of the fourth end drive-side conductive path is an example of the fourth sum described in the claims. Therefore, the power module 1B of this embodiment is configured such that the third sum and the fourth sum are brought closer together by the second control-side bypass section 26b and the second drive-side bypass section 27b.

[0254] (effect) According to the power module 1B of this embodiment, in addition to the effects similar to those of the power module 1A of the first embodiment, the following effects can be obtained.

[0255] (2-1) The first control-side connection portion 21c of the first control layer 21 is made of wire. The first drive-side connection portion 24c of the first drive layer 24 is also made of wire. With this configuration, it is possible to straddle other wiring provided on the substrate 10, thus increasing the degree of freedom in the arrangement of the first control-side connection portion 21c and the first drive-side connection portion 24c. Therefore, it becomes easier to design the layout of the first control layer 21 and the first drive layer 24.

[0256] [Examples of power module applications] An example of a circuit configuration using power modules 1A and 1B will be described. Note that, for convenience, the body diode 44 is omitted in Figures 33 and 34.

[0257] As a first example of the above circuit configuration, Figure 33 shows a three-phase AC inverter 200 configured using power modules 1A and 1B. In the three-phase AC inverter 200, power module 1A, which constitutes the U-phase inverter, power module 1A, which constitutes the V-phase inverter, and power module 1A, which constitutes the W-phase inverter, are connected in parallel to each other. The three-phase AC inverter 200 uses a SiCMOSFET as the power semiconductor element 40 and has a snubber capacitor C connected between the power supply terminal PL and the ground terminal NL. It is also possible to realize a three-phase AC inverter (not shown) using an IGBT as the power semiconductor element 40 and a snubber capacitor C connected between the power supply terminal PL and the ground terminal NL. In this case, the three-phase AC inverter 200 further includes a diode connected in antiparallel to the IGBT.

[0258] As shown in Figure 33, when power modules 1A and 1B are connected to power supply E and switching operation is performed, the high switching speed of the SiCMOSFET generates a large surge voltage Ldi / dt due to the inductance L of the connection line. For example, if the current change di = 300A and the time change dt associated with switching = 100nsec, then di / dt = 3 × 10⁻¹⁰ 9 (A / s)

[0259] The value of the surge voltage Ldi / dt changes depending on the value of the inductance L, and this surge voltage Ldi / dt is superimposed on the power supply E. This surge voltage Ldi / dt can be absorbed by the snubber capacitor C connected between the power supply terminal PL and the ground terminal NL.

[0260] As a second example of the above circuit configuration, Figure 34 shows a three-phase AC inverter 210 configured using power modules 1A and 1B. The three-phase AC inverter 210 comprises a power module unit 212 connected to a gate driver 211, a power supply or battery 213, and a converter 214, and controls the drive of the three-phase AC motor unit 215. The power module unit 212 is connected to U-phase inverters, V-phase inverters, and W-phase inverters, corresponding to the U-phase, V-phase, and W-phase of the three-phase AC motor unit 215.

[0261] The gate driver 211 is connected to the gate electrodes 43 of the first power semiconductor element group 40AT and the second power semiconductor element group 40BT of the power module 1A that constitutes the U-phase inverter, the gate electrodes 43 of the first power semiconductor element group 40AT and the second power semiconductor element group 40BT of the power module 1A that constitutes the V-phase inverter, and the gate electrodes 43 of the first power semiconductor element group 40AT and the second power semiconductor element group 40BT of the power module 1A that constitutes the W-phase inverter. The gate driver 211 is also connected to the source electrodes 42 of the first power semiconductor element group 40AT and the second power semiconductor element group 40BT of the power module 1A that constitutes the U-phase inverter, the source electrodes 42 of the first power semiconductor element group 40AT and the second power semiconductor element group 40BT of the power module 1A that constitutes the V-phase inverter, and the source electrodes 42 of the first power semiconductor element group 40AT and the second power semiconductor element group 40BT of the power module 1A that constitutes the W-phase inverter.

[0262] The power module section 212 is connected between the plus terminal (+) P and the minus terminal (-) N of a converter 214 to which a power supply or a storage battery (E) 213 is connected, and includes each power semiconductor element group 40AT, 40BT of the power module 1A that constitutes the U-phase inverter, each power semiconductor element group 40AT, 40BT of the power module 1A that constitutes the V-phase inverter, and each power semiconductor element group 40AT, 40BT of the power module 1A that constitutes the W-phase inverter.

[0263] Freewheel diodes 216 are respectively connected in reverse parallel between the source electrode 42 and the drain electrode 41 of each power semiconductor element group 40AT, 40BT of each phase inverter.

[0264] [Modification example] Each of the above embodiments is an exemplification of a form that the power module according to the present disclosure can take, and is not intended to limit the form. The power module according to the present disclosure can take a form different from the forms exemplified in each of the above embodiments. An example thereof is a form in which a part of the configuration of each of the above embodiments is replaced, changed, or omitted, or a form in which a new configuration is added to each of the above embodiments. In the following modification examples, parts common to each of the above embodiments are denoted by the same reference numerals as those in each of the above embodiments, and the description thereof is omitted.

[0265] ·In the first embodiment described above, the first control layer 21 and the first drive layer 23 can be interchanged, and the first control layer 22 and the first drive layer 24 can be interchanged. In one example, as shown in FIG. 35, in the first substrate 11, in the vertical direction Y, the first control layer 21 is arranged so as to be adjacent to the first mounting layer 13A, and the first drive layer 23 is arranged on the side opposite to the first mounting layer 13A with respect to the first control layer 21.

[0266] The first control layer 21 extends in the horizontal direction X. The shape of the first control layer 21 is the same as the shape of the first drive layer 23 in the first embodiment. A first control side connection member 32A connected to each first power semiconductor element 40A of the first substrate 11 is connected to the first control layer 21.

[0267] The shape of the first driving layer 23 is the same as that of the first control layer 21 in the first embodiment. The first driving layer 23 includes a first driving side wiring portion 23a, a first driving side bypass portion 23b, a first driving side connection portion 23c, and a first driving side connection portion 23d. The first driving layer 23 is a single member in which the first driving side wiring portion 23a, the first driving side bypass portion 23b, the first driving side connection portion 23c, and the first driving side connection portion 23d are integrally formed. In the vertical direction Y, the first driving side bypass portion 23b is disposed on the side opposite to the first control layer 21 with respect to the first driving side wiring portion 23a. A first driving side connection member 33A connected to each first power semiconductor element 40A of the first substrate 11 is connected to the first driving side wiring portion 23a of the first driving layer 23. As shown in FIG. 35, the first driving side connection member 33A connected to each first power semiconductor element 40A of the first substrate 11 is not connected to the first driving side bypass portion 23b. A first detection terminal side connection member 36A and a first driving layer connection member 94A are connected to the first driving side connection portion 23d.

[0268] Also, in the second substrate 12, in the vertical direction Y, the first control layer 22 is disposed adjacent to the first mounting layer 13B, and the first driving layer 24 is disposed on the side opposite to the first mounting layer 13B with respect to the first control layer 22.

[0269] The shape of the first control layer 22 is the same as that of the first drive layer 24 in the first embodiment. The first control layer 22 has a first control-side wiring section 22a, a first control-side bypass section 22b, a first control-side connecting section 22c, and a first control-side connection section 22d. The first control layer 22 is a single member in which the first control-side wiring section 22a, the first control-side bypass section 22b, the first control-side connecting section 22c, and the first control-side connection section 22d are integrally formed. In the vertical direction Y, the first control-side bypass section 22b is located on the opposite side from the first control-side wiring section 22a relative to the first drive layer 24. The first control-side connection member 32A, which is connected to each first power semiconductor element 40A of the second substrate 12, is connected to the first control-side wiring section 22a. As shown in Figure 35, the first control-side bypass portion 22b is not connected to the first control-side connecting member 32A, which is connected to each first power semiconductor element 40A of the second substrate 12. The first control-side connecting portion 22d is connected to the first control terminal-side connecting member 35A and the first control layer connecting member 93A. In plan view, the first control layer connecting member 93A extends in the lateral direction X.

[0270] The shape of the first drive layer 24 is the same as that of the first control layer 22 in the first embodiment. The first drive layer 24 extends in the lateral direction X. In the vertical direction Y, the first drive layer 24 is positioned between the first control-side wiring section 22a and the first control-side bypass section 22b. In the lateral direction X, the end of the first drive layer 24 on the side surface 12c of the third substrate of the second substrate 12 is connected to the first drive layer connecting member 94A. In a plan view, the first drive layer connecting member 94A extends in the lateral direction X.

[0271] Furthermore, as shown in Figure 35, the lateral position of the first control terminal 53A and the first detection terminal 54A in the lateral direction X may be reversed compared to the first embodiment. This makes it possible to avoid the intersection of the first control terminal side connecting member 35A and the first detection terminal side connecting member 36A in a plan view.

[0272] In the first embodiment described above, the second control layer 25 and the second drive layer 27 can be swapped, and the second control layer 26 and the second drive layer 28 can be swapped. In one example, as shown in Figure 36, in the first substrate 11, the second control layer 25 is arranged adjacent to the conductive layer 15A in the vertical direction Y, and the second drive layer 27 is arranged on the opposite side of the conductive layer 15A from the second control layer 25.

[0273] The shape of the second control layer 25 is the same as that of the second drive layer 27 in the first embodiment. The second control layer 25 has a second control-side wiring section 25a, a second control-side bypass section 25b, a second control-side connecting section 25c, and a second control-side connection section 25d. The second control layer 25 is a single component in which the second control-side wiring section 25a, the second control-side bypass section 25b, the second control-side connecting section 25c, and the second control-side connection section 25d are integrally formed. In the vertical direction Y, the second control-side bypass section 25b is located on the opposite side from the second control-side wiring section 25a relative to the second drive layer 27. The second control-side connection member 32B, which is connected to each second power semiconductor element 40B of the first substrate 11, is connected to the second control-side wiring section 25a. As shown in Figure 36, the second control-side bypass section 25b is not connected to the second control-side connecting member 32B, which is connected to each second power semiconductor element 40B of the first substrate 11. The second control-side connecting section 25d is connected to the second control terminal-side connecting member 35B and the second control layer connecting member 93B.

[0274] The shape of the second drive layer 27 is the same as the shape of the second control layer 25 in the first embodiment. The second drive layer 27 extends in the lateral direction X. In the vertical direction Y, the second drive layer 27 is positioned between the second control side wiring portion 25a and the second control side bypass portion 25b of the second control layer 25. A second drive layer connecting member 94B is connected to the end of the second drive layer 27 in the lateral direction X that is on the fourth substrate side surface 11d side of the first substrate 11.

[0275] Furthermore, in the second substrate 12, the second control layer 26 is arranged adjacent to the conductive layer 15B in the vertical direction Y, and the second drive layer 28 is arranged on the opposite side of the conductive layer 15B from the second control layer 26.

[0276] The shape of the second drive layer 28 is the same as that of the second control layer 26 in the first embodiment. The second drive layer 28 has a second drive-side wiring section 28a, a second drive-side bypass section 28b, a second drive-side connecting section 28c, and a second drive-side connection section 28d. The second drive layer 28 is a single component in which the second drive-side wiring section 28a, the second drive-side bypass section 28b, the second drive-side connecting section 28c, and the second drive-side connection section 28d are integrally formed. In the vertical direction Y, the second drive-side bypass section 28b is positioned on the opposite side from the second control layer 26 relative to the second drive-side wiring section 28a. The second drive-side connection member 33B, which is connected to each second power semiconductor element 40B of the second substrate 12, is connected to the second drive-side wiring section 28a. As shown in Figure 36, the second drive-side bypass portion 28b is not connected to the second drive-side connecting member 33B, which is connected to each second power semiconductor element 40B of the second substrate 12. The second drive-side connecting portion 28d is connected to the second detection terminal-side connecting member 36B and the second drive layer connecting member 94B. In a plan view, the second drive layer connecting member 94B extends in the lateral direction X.

[0277] The shape of the second control layer 26 is the same as that of the second drive layer 28 in the first embodiment. The second control layer 26 extends in the lateral direction X. In the vertical direction Y, the second control layer 26 is positioned between the second drive-side wiring section 28a and the second drive-side bypass section 28b. In the lateral direction X, the second control layer connecting member 93B is connected to the end of the second drive layer 28 on the third substrate side surface 12c side of the second substrate 12. In a plan view, the second control layer connecting member 93B extends in the lateral direction X.

[0278] Furthermore, as shown in Figure 36, the lateral position of the second control terminal 53B and the second detection terminal 54B in the lateral direction X may be reversed compared to the first embodiment. This makes it possible to avoid the intersection of the second control terminal side connecting member 35B and the second detection terminal side connecting member 36B in a plan view.

[0279] In the second embodiment described above, the first control layer 21 and the first drive layer 23 can be swapped, and the first control layer 22 and the first drive layer 24 can be swapped. In one example, as shown in Figure 37, in the first substrate 11, the first control layer 21 is arranged adjacent to the first mounting layer 13A in the vertical direction Y, and the first drive layer 23 is arranged on the opposite side of the first control layer 21 from the first mounting layer 13A.

[0280] The first control layer 21 extends in the lateral direction X. The shape of the first control layer 21 is the same as the shape of the first drive layer 23 in the second embodiment. The first control-side connecting member 32A, which is connected to each first power semiconductor element 40A of the first substrate 11, is connected to the first control layer 21.

[0281] The shape of the first drive layer 23 is the same as that of the first control layer 21 in the second embodiment. The first drive layer 23 has a first drive-side wiring section 23a, a first drive-side bypass section 23b, and a first drive-side connecting section 23c. The first drive-side wiring section 23a, the first drive-side bypass section 23b, and the first drive-side connecting section 23c are formed individually. The first drive-side wiring section 23a and the first drive-side bypass section 23b are each made of, for example, copper foil. The first drive-side connecting section 23c is a wire made of, for example, wire bonding. In the longitudinal direction Y, the first drive-side bypass section 23b is positioned on the opposite side from the first control layer 21 relative to the first drive-side wiring section 23a. The first drive-side connecting member 33A, which is connected to each first power semiconductor element 40A of the first substrate 11, is connected to the first drive-side wiring section 23a of the first drive layer 23. As shown in Figure 37, the first drive-side bypass portion 23b is not connected to the first drive-side connecting member 33A, which is connected to each first power semiconductor element 40A of the first substrate 11. The first drive-side connecting portion 23d is connected to the first detection terminal-side connecting member 36A and the first drive layer connecting member 94A.

[0282] Furthermore, in the second substrate 12, the first control layer 22 is arranged adjacent to the first mounting layer 13B in the vertical direction Y, and the first drive layer 24 is arranged on the opposite side of the first control layer 22 from the first mounting layer 13B.

[0283] The shape of the first control layer 22 is the same as the shape of the first drive layer 24 in the first embodiment. The first control layer 22 has a first control-side wiring section 22a, a first control-side bypass section 22b, a first control-side connecting section 22c, and a first control-side connection section 22d. The first control-side wiring section 22a, the first control-side bypass section 22b, the first control-side connecting section 22c, and the first control-side connection section 22d are formed individually, and the first control-side bypass section 22b and the first control-side connection section 22d are formed integrally. The first control-side wiring section 22a, the first control-side bypass section 22b, and the first control-side connection section 22d are each made of, for example, copper foil. The first control-side connecting section 22c is a wire made of, for example, wire bonding. In the longitudinal direction Y, the first control-side bypass section 22b is located on the opposite side from the first control-side wiring section 22a to the first drive layer 24. The first control-side wiring section 22a is connected to the first control-side connecting member 32A, which is connected to each first power semiconductor element 40A of the second substrate 12. As shown in Figure 37, the first control-side bypass section 22b is not connected to the first control-side connecting member 32A, which is connected to each first power semiconductor element 40A of the second substrate 12. The first control-side connecting section 22d is connected to the first control terminal-side connecting member 35A and the first control layer connecting member 93A. In a plan view, the first control layer connecting member 93A extends in the lateral direction X.

[0284] The shape of the first drive layer 24 is the same as the shape of the first control layer 22 in the first embodiment. The first drive layer 24 extends in the lateral direction X. In the vertical direction Y, the first drive layer 24 is positioned between the first control side wiring section 22a and the first control side bypass section 22b. A first drive layer connecting member 94A is connected to the end of the first drive layer 24 in the lateral direction X that is on the side surface 12c of the third substrate of the second substrate 12.

[0285] Furthermore, as shown in Figure 37, the lateral position of the first control terminal 53A and the first detection terminal 54A in the lateral direction X may be reversed compared to the first embodiment. This makes it possible to avoid the intersection of the first control terminal side connecting member 35A and the first detection terminal side connecting member 36A in a plan view.

[0286] ·In the above second embodiment, the second control layer 25 and the second drive layer 27 can be swapped, and the second control layer 26 and the second drive layer 28 can be swapped. In one example, as shown in FIG. 38, on the first substrate 11, in the longitudinal direction Y, the second control layer 25 is arranged adjacent to the conductive layer 15A, and the second drive layer 27 is arranged on the side opposite to the conductive layer 15A with respect to the second control layer 25.

[0287] The shape of the second control layer 25 is the same as the shape of the second drive layer 27 in the second embodiment. The second control layer 25 has a second control side wiring portion 25a, a second control side bypass portion 25b, a second control side connection portion 25c, and a second control side connection portion 25d. The second control side wiring portion 25a, the second control side bypass portion 25b, and the second control side connection portion 25c are formed individually, and the second control side bypass portion 25b and the second control side connection portion 25d are formed integrally. In the longitudinal direction Y, the second control side bypass portion 25b is arranged on the side opposite to the second control side wiring portion 25a with respect to the second drive layer 27. A second control side connection member 32B connected to each second power semiconductor element 40B of the first substrate 11 is connected to the second control side wiring portion 25a. As shown in FIG. 38, the second control side connection member 32B connected to each second power semiconductor element 40B of the first substrate 11 is not connected to the second control side bypass portion 25b. A second control terminal side connection member 35B and a second control layer connection member 93B are connected to the second control side connection portion 25d.

[0288] The shape of the second drive layer 27 is the same as the shape of the second control layer 25 in the second embodiment. The second drive layer 27 extends in the lateral direction X. In the longitudinal direction Y, the second drive layer 27 is arranged between the second control side wiring portion 25a and the second control side bypass portion 25b in the second control layer 25. A second drive layer connection member 94B is connected to the end portion of the second drive layer 27 on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X.

[0289] Also, on the second substrate 12, in the longitudinal direction Y, the second control layer 26 is arranged adjacent to the conductive layer 15B, and the second drive layer 28 is arranged on the side opposite to the conductive layer 15B with respect to the second control layer 26.

[0290] The shape of the second drive layer 28 is the same as that of the second control layer 26 in the second embodiment. The second drive layer 28 has a second drive-side wiring section 28a, a second drive-side bypass section 28b, and a second drive-side connecting section 28c. The second drive-side wiring section 28a, the second drive-side bypass section 28b, and the second drive-side connecting section 28c are formed individually. In the vertical direction Y, the second drive-side bypass section 28b is positioned on the opposite side from the second control layer 26 relative to the second drive-side wiring section 28a. The second drive-side connecting member 33B, which is connected to each second power semiconductor element 40B of the second substrate 12, is connected to the second drive-side wiring section 28a. As shown in Figure 38, the second drive-side connecting member 33B, which is connected to each second power semiconductor element 40B of the second substrate 12, is not connected to the second drive-side bypass section 28b. The second drive-side connection portion 28d is connected to the second detection terminal-side connection member 36B and the second drive-layer connection member 94B.

[0291] The shape of the second control layer 26 is the same as that of the second drive layer 28 in the second embodiment. The second control layer 26 extends in the lateral direction X. In the vertical direction Y, the second control layer 26 is positioned between the second drive-side wiring section 28a and the second drive-side bypass section 28b. In the lateral direction X, the second control layer connecting member 93B is connected to the end of the second drive layer 28 on the third substrate side surface 12c side of the second substrate 12. In a plan view, the second control layer connecting member 93B extends in the lateral direction X.

[0292] Furthermore, as shown in Figure 38, the lateral position of the second control terminal 53B and the second detection terminal 54B in the lateral direction X may be reversed compared to the first embodiment. This makes it possible to avoid the intersection of the second control terminal side connecting member 35B and the second detection terminal side connecting member 36B in a plan view.

[0293] In the second embodiment described above, the first control layer 21 may have a first control-side connection portion 21d, as in the first embodiment. The first control-side connection portion 21d is formed at the end of the first control-side bypass portion 21b in the lateral direction X that is on the fourth substrate side surface 11d side of the first substrate 11. In this case, the length of the first control-side wiring portion 21a of the first control layer 21 in the lateral direction X is shortened. The first control-side connection portion 21d allows the first control layer connecting member 93A to be formed to extend along the lateral direction X in a plan view.

[0294] In the second embodiment described above, the second control layer 26 may have a second control-side connection portion 26d, as in the first embodiment. The second control-side connection portion 26d is formed at the end of the second control-side bypass portion 26b in the lateral direction X that is on the side surface 12c of the third substrate of the second substrate 12. In this case, the length of the second control-side wiring portion 26a of the second control layer 26 in the lateral direction X is shortened. The second control-side connection portion 26d allows the second control layer connecting member 93B to extend along the lateral direction X in a plan view.

[0295] In the second embodiment described above, the first control-side connecting portion 21c of the first control layer 21 may be formed by a strip-shaped thin plate instead of a wire. As the material for the strip-shaped thin plate, Cu or a Cu alloy, or Al or an Al alloy may be used.

[0296] In the second embodiment described above, the first drive-side connecting portion 24c of the first drive layer 24 may be formed by a strip-shaped thin plate instead of a wire. As the material for the strip-shaped thin plate, Cu or a Cu alloy, or Al or an Al alloy may be used.

[0297] In the second embodiment described above, the second control-side connecting portion 26c of the second control layer 26 may be formed by a strip-shaped thin plate instead of a wire. As the material for the strip-shaped thin plate, Cu or a Cu alloy, or Al or an Al alloy may be used.

[0298] In the second embodiment described above, the second drive-side connecting portion 27c of the second drive layer 27 may be formed by a strip-shaped thin plate instead of a wire. As the material for the strip-shaped thin plate, Cu or a Cu alloy, or Al or an Al alloy may be used.

[0299] In each of the above embodiments, at least one of the first element connecting member 31A and the second element connecting member 31B may be made up of one or more wires. In each of the above embodiments, at least one of the connecting members 90A to 90C may be composed of one or more wires.

[0300] In each of the above embodiments, the configuration of the power semiconductor elements 40 (40A, 40B) can be arbitrarily changed. In one example, as shown in Figure 39, a source electrode 42 and a gate electrode 43 are formed on the main surface 40s of the first power semiconductor element 40A. The source electrode 42 is formed over most of the main surface 40s. In this embodiment, the source electrode 42 includes a first source electrode 42D and a second source electrode 42E. In a plan view, the first source electrode 42D and the second source electrode 42E are spaced apart in the lateral direction X. In a plan view, the gate electrode 43 is located in a recess 42x formed in the source electrode 42. In Figure 39, the first drive-side connecting member 33A is connected to the second source electrode 42E. The first drive-side connecting member 33A may also be connected to the first source electrode 42D. The second power semiconductor element 40B can also be changed as shown in Figure 39.

[0301] In each of the above embodiments, either the first output terminal 52A or the second output terminal 52B may be omitted. In each of the above embodiments, the substrate 10 may be configured such that the first substrate 11 and the second substrate 12 are integrally formed. In this case, the connecting members 90A to 90C are omitted. The first control layer 21 and the first control layer 22 may also be integrated. In this case, the first control layer connecting member 93A is omitted. The first drive layer 23 and the first drive layer 24 may also be integrated. In this case, the first drive layer connecting member 94A is omitted. The second control layer 25 and the second control layer 26 may also be integrated. In this case, the second control layer connecting member 93B is omitted. The second drive layer 27 and the second drive layer 28 may also be integrated. In this case, the second drive layer connecting member 94B is omitted.

[0302] In each of the above embodiments, either the first substrate 11 or the second substrate 12 may be omitted from the substrate 10. If the second substrate 12 is omitted from the substrate 10, the first mounting layer 13B, the second mounting layer 14B, the conductive layer 15B, the first control layer 22, the first drive layer 24, the second control layer 26, the second drive layer 28, and the power semiconductor elements 40A and 40B of the second substrate 12 are mainly omitted. Also, if the first substrate 11 is omitted from the substrate 10, the first mounting layer 13A, the second mounting layer 14A, the conductive layer 15A, the first control layer 21, the first drive layer 23, the second control layer 25, the second drive layer 27, and the power semiconductor elements 40A and 40B of the first substrate 11 are mainly omitted.

[0303] In each of the above embodiments, the power supply current terminal 55 may be omitted. In this case, the power supply current detection side connecting member 34 is omitted. In each of the above embodiments, the thermistor 17 may be omitted. In addition, the thermistor mounting layer 16, the pair of temperature detection terminals 56, and the pair of thermistor-side connecting members 37 may be omitted.

[0304] In each of the above embodiments, the power module may be configured to include a single substrate, a mounting layer, a conductive layer, a control layer, and a drive layer arranged on the main surface of the substrate, a plurality of power semiconductor elements arranged on the mounting layer, and control terminals and detection terminals. In this case, a bypass portion is formed in at least one of the control layer and the drive layer such that the sum of the lengths of the control-side conductive paths and the drive-side conductive paths in the plurality of power semiconductor elements approaches each other.

[0305] (Note) Next, we will explain the technical concepts that can be understood from each of the above embodiments and each of the above modifications. (Note 1) A substrate having an electrical insulating surface and a substrate back surface that face opposite each other in the thickness direction, A mounting layer, a control layer, and a drive layer, each having conductivity, are formed on the main surface of the substrate. A power semiconductor element mounted on the aforementioned mounting layer, having a back surface of the element on which a first drive electrode electrically connected to the aforementioned mounting layer is formed, and a main surface of the element on which a second drive electrode and a control electrode are formed, A control-side connecting member that connects the control electrode and the control layer, A drive-side connecting member that connects the aforementioned second drive electrode and the drive layer, Control terminals electrically connected to the control layer, A power module comprising a detection terminal electrically connected to the drive layer, The power semiconductor element is one of a plurality of power semiconductor elements provided on the mounting layer in an arrangement that is unidirectional when viewed from the thickness direction. The control-side connecting member is one of a plurality of control-side connecting members, each corresponding to one of the plurality of power semiconductor elements. The drive-side connecting member is one of a plurality of drive-side connecting members, each corresponding to one of the plurality of power semiconductor elements. The path between the control electrode and the control terminal is designated as the first conductive path, and the path between the second drive electrode and the detection terminal is designated as the second conductive path. At least one of the control layer and the drive layer has a bypass portion that bypasses the area such that the sum of the length of the first conductive path and the length of the second conductive path approaches each other among the plurality of power semiconductor elements. Power module.

[0306] (Note 2) A substrate having an electrical insulating surface and a substrate back surface that face opposite each other in the thickness direction, A mounting layer, a control layer, and a drive layer, each having conductivity, are formed on the main surface of the substrate. A plurality of power semiconductor elements are mounted on the aforementioned mounting layer, each having a back surface on which a first drive electrode electrically connected to the mounting layer is formed, and a main surface on which a second drive electrode and a control electrode are formed, and are arranged in one direction when viewed from the thickness direction. A plurality of control-side connecting members are used to connect the control electrodes and the control layer of the plurality of power semiconductor elements, and are arranged in the same direction as the arrangement direction of the plurality of power semiconductor elements. A connection between the second drive electrode and the drive layer of the plurality of power semiconductor elements, comprising a plurality of drive-side connecting members arranged in the same direction as the arrangement direction of the plurality of power semiconductor elements, Control terminals electrically connected to the control layer, A power module comprising a detection terminal electrically connected to the drive layer, The plurality of power semiconductor elements include a first end power semiconductor element and a second end power semiconductor element located at both ends in the arrangement direction. The path between the control electrode and the control terminal of the first end power semiconductor element is defined as the first control-side conductive path, the path between the second drive electrode and the detection terminal of the first end power semiconductor element is defined as the first drive-side conductive path, and the sum of the length of the first control-side conductive path and the length of the first drive-side conductive path is defined as the first sum. If the path between the control electrode and the control terminal of the second terminal power semiconductor element is defined as the second control-side conductive path, and the path between the second drive electrode and the detection terminal of the second terminal power semiconductor element is defined as the second drive-side conductive path, and the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path is defined as the second sum, At least one of the control layer and the drive layer has a bypass portion that bypasses the conductive path so that the first sum and the second sum are closer to each other. Power module.

[0307] (Note 3) If we define the aforementioned one direction as the first direction, and the direction that intersects the first direction when viewed from the thickness direction as the second direction, The control layer and the drive layer each have a wiring portion extending in the first direction, The bypass portion is positioned spaced apart from the wiring portion in the second direction and extends in the first direction. The power module described in Appendix 1 or 2.

[0308] (Note 4) At least one of the control layer and the drive layer has a connecting portion that connects the bypass portion and the wiring portion. The wiring section, the bypass section, and the connecting section are made of a single, integrally formed member. The power module described in Appendix 3.

[0309] (Note 5) At least one of the control layer and the drive layer has a connecting portion that connects the bypass portion and the wiring portion. The aforementioned connecting portion is made of wire. The power module described in Appendix 3.

[0310] (Note 6) The drive layer is positioned closer to the mounting layer than the control layer. The power module listed in any one of the appendices 1-5.

[0311] (Note 7) The control layer has the bypass portion, The bypass section is located on the opposite side of the drive layer from the wiring section of the control layer. The power module described in Appendix 6.

[0312] (Note 8) The drive layer has the bypass portion, The bypass section is located on the opposite side of the control layer from the mounting layer. The power module described in Appendix 6.

[0313] (Note 9) The control-side connecting member and the drive-side connecting member are not connected to the bypass portion. The power module listed in any one of the appendices 1-8.

[0314] (Note 10) If we define the aforementioned one direction as the first direction, and the direction that intersects the first direction when viewed from the thickness direction as the second direction, Viewed from the thickness direction, at least one of the control-side connecting member and the drive-side connecting member extends in the second direction. The power module listed in any one of the appendices 1-9.

[0315] (Note 11) The control terminal and the control layer are electrically connected by a control terminal-side connecting member. The detection terminal and the drive layer are electrically connected by a detection terminal-side connecting member. The power module listed in any one of the appendices 1-10.

[0316] (Note 12) The control layer has a bypass portion and a first connection portion formed at the tip of the bypass portion to which the control terminal side connection member is connected. The power module described in Appendix 11.

[0317] (Note 13) The drive layer has a bypass portion and a second connection portion formed at the tip of the bypass portion to which the detection terminal side connection member is connected. The power module described in Appendix 11 or 12.

[0318] (Note 14) The substrate comprises a first substrate and a second substrate, The mounting layer, the control layer, and the drive layer are arranged on the main surface of the first substrate and the second substrate, respectively. The plurality of power semiconductor elements are arranged in the same direction on the mounting layer of the first substrate and the mounting layer of the second substrate, The first substrate and the second substrate are arranged spaced apart from each other in the one direction. The mounting layer of the first substrate and the mounting layer of the second substrate are electrically connected by a mounting layer connecting member. The control layer of the first substrate and the control layer of the second substrate are electrically connected by a control layer connecting member. The drive layer of the first substrate and the drive layer of the second substrate are electrically connected by a drive layer connecting member. One of the control layer and the drive layer of the first substrate has the bypass portion, The control layer and the other drive layer of the second substrate have the bypass portion. The power module listed in any one of the appendices 1-13.

[0319] (Note 15) If we define the aforementioned one direction as the first direction, and the direction that intersects the first direction when viewed from the thickness direction as the second direction, Viewed from the second direction, the control terminal and the detection terminal are each arranged to overlap with the second substrate. The power module described in Appendix 14.

[0320] (Note 16) The aforementioned power semiconductor element consists of a SiCMOSFET. The first drive electrode is a drain electrode, the second drive electrode is a source electrode, and the control electrode is an gate electrode. The power module listed in any one of the appendices 1-15.

[0321] (Note 17) A substrate having an electrical insulating surface and a substrate back surface that face opposite each other in the thickness direction, The substrate main surface is formed with a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each having conductivity. A first power semiconductor element mounted on the first mounting layer, having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a first element main surface on which a control electrode is formed, A second power semiconductor element mounted on the second mounting layer, having a second element back surface on which a first drive electrode electrically connected to the output terminal is formed, and a second element main surface on which a second drive electrode electrically connected to the second input terminal and a control electrode are formed, A first control-side connecting member that connects the control electrode of the first power semiconductor element and the first control layer, A first drive-side connecting member that connects the second drive electrode of the first power semiconductor element and the first drive layer, A second control-side connecting member connects the control electrode of the second power semiconductor element and the second control layer, A second drive-side connecting member that connects the second drive electrode and the second drive layer of the second power semiconductor element, A first control terminal electrically connected to the first control layer, A second control terminal electrically connected to the second control layer, A first detection terminal electrically connected to the first drive layer, A power module comprising a second detection terminal electrically connected to the second drive layer, The first power semiconductor element is one of a plurality of first power semiconductor elements provided on the first mounting layer in an arrangement that is unidirectional when viewed from the thickness direction. The first control-side connecting member is one of a plurality of first control-side connecting members, each corresponding to one of the plurality of first power semiconductor elements. The first drive-side connecting member is one of a plurality of first drive-side connecting members, each corresponding to one of the plurality of first power semiconductor elements. The path between the control electrode and the first control terminal of the first power semiconductor element is defined as the first conductive path, and the path between the second drive electrode and the first detection terminal of the first power semiconductor element is defined as the second conductive path. At least one of the first control layer and the first drive layer has a first bypass portion that bypasses the plurality of first power semiconductor elements such that the sum of the lengths of the first conductive path and the second conductive path approaches each other. Power module.

[0322] (Note 18) A substrate having an electrical insulating surface and a substrate back surface that face opposite each other in the thickness direction, The substrate main surface is formed with a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each having conductivity. A plurality of first power semiconductor elements are mounted on the first mounting layer, each having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a control electrode formed on the first element main surface, and are arranged in one direction when viewed from the thickness direction. A plurality of second power semiconductor elements mounted on the second mounting layer, each having a back surface of a second element on which a first drive electrode electrically connected to the output terminal is formed, and a main surface of a second element on which a second drive electrode electrically connected to a second input terminal and a control electrode are formed, and arranged in one direction on the second mounting layer. A plurality of first control-side connecting members are used to connect the control electrodes of the plurality of first power semiconductor elements to the first control layer, and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements. A plurality of first drive-side connecting members are used to connect the second drive electrodes of the plurality of first power semiconductor elements and the first drive layer, and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements. A plurality of second control-side connecting members are used to connect the control electrodes of the plurality of second power semiconductor elements to the second control layer, and are arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements. A connection between the second drive electrode and the second drive layer of the second power semiconductor element, comprising a plurality of second drive-side connecting members arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements, A first control terminal electrically connected to the first control layer, A second control terminal electrically connected to the second control layer, A first detection terminal electrically connected to the first drive layer, A power module comprising a second detection terminal electrically connected to the second drive layer, The plurality of first power semiconductor elements include first end power semiconductor elements and second end power semiconductor elements located at both ends in the arrangement direction of the plurality of first power semiconductor elements. The path between the control electrode and the first control terminal of the first end power semiconductor element is defined as the first end control side conductive path, the path between the second drive electrode and the first detection terminal of the first end power semiconductor element is defined as the first end drive side conductive path, and the sum of the length of the first end control side conductive path and the length of the first end drive side conductive path is defined as the first sum. If the path between the control electrode and the first control terminal of the second-end power semiconductor element is defined as the second-end control side conductive path, and the path between the second drive electrode and the first detection terminal of the second-end power semiconductor element is defined as the second-end drive side conductive path, and the sum of the length of the second-end control side conductive path and the length of the second-end drive side conductive path is defined as the second sum, At least one of the first control layer and the first drive layer has a first bypass section that bypasses the conductive path so that the first sum and the second sum are closer to each other. Power module.

[0323] According to Appendix 18, since the voltage between the first control terminal and the first detection terminal is applied to the control electrode of the first power semiconductor element as a control voltage, the timing of applying the control voltage to the control electrode of the first power semiconductor element is determined according to the sum of the inductance value between the control electrode and the first control terminal of the first power semiconductor element and the inductance value between the second drive electrode and the first detection terminal of the first power semiconductor element. The inductance value between the control electrode and the first control terminal of the first power semiconductor element is mainly determined by the length of the conductive path between the control electrode and the first control terminal of the first power semiconductor element, and the inductance value between the second drive electrode and the first detection terminal of the first power semiconductor element is mainly determined by the length of the conductive path between the second drive electrode and the first detection terminal of the first power semiconductor element. Therefore, by suppressing the variation in the sum of the lengths of the conductive paths between the control electrode and the first control terminal and the conductive paths between the second drive electrode and the first detection terminal of the first power semiconductor element among multiple first power semiconductor elements, the variation in the sum of the inductance values ​​among multiple first power semiconductor elements can be suppressed.

[0324] Furthermore, the length of the conductive path between the first control electrode and the first control terminal, and the variation in the conductive path between the second drive electrode and the first detection terminal, are considered to be maximum between the first power semiconductor elements at both ends (the first-end power semiconductor element and the second-end power semiconductor element) in the direction of the arrangement of the multiple first power semiconductor elements.

[0325] Therefore, in the power module according to Appendix 18, the first bypass section is configured such that the first sum, which is the sum of the length of the first end control side conductive path and the length of the first end drive side conductive path of the first end power semiconductor element, and the second sum, which is the sum of the length of the second end control side conductive path and the length of the second end drive side conductive path of the second end power semiconductor element, approach each other. This suppresses the variation in the inductance value, which is the sum of the inductance value in the first end control side conductive path and the inductance value in the first end drive side conductive path, and the variation in the inductance value, which is the sum of the inductance value in the second end control side conductive path and the inductance value in the second end drive side conductive path. Consequently, the variation in the on / off timing between the first end power semiconductor element and the s...

Claims

1. A substrate having an electrical insulating surface and a substrate back surface that face opposite each other in the thickness direction, The substrate main surface is formed with a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each having conductivity. A first power semiconductor element mounted on the first mounting layer, having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a first element main surface on which a control electrode is formed, A second power semiconductor element mounted on the second mounting layer, having a second element back surface on which a first drive electrode electrically connected to the output terminal is formed, and a second element main surface on which a second drive electrode electrically connected to the second input terminal and a control electrode are formed, A first control-side connecting member that connects the control electrode of the first power semiconductor element and the first control layer, A first drive-side connecting member that connects the second drive electrode of the first power semiconductor element and the first drive layer, A second control-side connecting member connects the control electrode of the second power semiconductor element and the second control layer, A second drive-side connecting member that connects the second drive electrode and the second drive layer of the second power semiconductor element, A first control terminal electrically connected to the first control layer, A second control terminal electrically connected to the second control layer, A first detection terminal electrically connected to the first drive layer, A power module comprising a second detection terminal electrically connected to the second drive layer, Multiple of the second power semiconductor elements are provided on the second mounting layer in an arrangement that is unidirectional when viewed from the thickness direction. The second control-side connecting member and the second drive-side connecting member are provided in multiple quantities corresponding to the multiple second power semiconductor elements. The path between the control electrode and the second control terminal of the second power semiconductor element is defined as the third conductive path, and the path between the second drive electrode and the second detection terminal of the second power semiconductor element is defined as the fourth conductive path. At least one of the second control layer and the second drive layer has a second bypass portion that bypasses the plurality of second power semiconductor elements such that the sum of the lengths of the third conductive path and the fourth conductive path approaches each other. Power module.

2. A substrate having an electrical insulating surface and a substrate back surface that face opposite each other in the thickness direction, The substrate main surface is formed with a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each having conductivity. A plurality of first power semiconductor elements are mounted on the first mounting layer, each having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a control electrode formed on the first element main surface, and are arranged in one direction when viewed from the thickness direction. A plurality of second power semiconductor elements mounted on the second mounting layer, each having a back surface of a second element on which a first drive electrode electrically connected to the output terminal is formed, and a main surface of a second element on which a second drive electrode electrically connected to the second input terminal and a control electrode are formed, and arranged in one direction on the second mounting layer. A plurality of first control-side connecting members are used to connect the control electrodes of the plurality of first power semiconductor elements to the first control layer, and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements. A plurality of first drive-side connecting members are used to connect the second drive electrodes of the plurality of first power semiconductor elements and the first drive layer, and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements. A plurality of second control-side connecting members are used to connect the control electrodes of the plurality of second power semiconductor elements to the second control layer, and are arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements. A connection between the second drive electrode and the second drive layer of the second power semiconductor element, comprising a plurality of second drive-side connecting members arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements, A first control terminal electrically connected to the first control layer, A second control terminal electrically connected to the second control layer, A first detection terminal electrically connected to the first drive layer, A power module comprising a second detection terminal electrically connected to the second drive layer, The plurality of second power semiconductor elements include first end power semiconductor elements and second end power semiconductor elements located at both ends in the arrangement direction of the plurality of second power semiconductor elements. The path between the control electrode and the second control terminal of the first terminal power semiconductor element is defined as the third terminal control side conductive path, the path between the second drive electrode and the second detection terminal of the first terminal power semiconductor element is defined as the third terminal drive side conductive path, and the sum of the length of the third terminal control side conductive path and the length of the third terminal drive side conductive path is defined as the third sum. If the path between the control electrode and the second control terminal of the second-end power semiconductor element is defined as the fourth-end control side conductive path, and the path between the second drive electrode and the second detection terminal of the second-end power semiconductor element is defined as the fourth-end drive side conductive path, and the sum of the length of the fourth-end control side conductive path and the length of the fourth-end drive side conductive path is defined as the fourth sum, At least one of the second control layer and the second drive layer has a second bypass portion that bypasses the conductive path so that the third sum and the fourth sum are closer together. Power module.

3. If we define the aforementioned one direction as the first direction, and the direction that intersects the first direction when viewed from the thickness direction as the second direction, The second control layer and the second drive layer each have a second wiring portion extending in the first direction, The second bypass section is positioned spaced apart from the second wiring section in the second direction and extends in the first direction. The power module according to claim 1 or 2.

4. At least one of the second control layer and the second drive layer has a second connecting portion that connects the second bypass portion and the second wiring portion. The second wiring section, the second bypass section, and the second connecting section are made of a single, integrally formed member. The power module according to claim 3.

5. At least one of the second control layer and the second drive layer has a second connecting portion that connects the second bypass portion and the second wiring portion. The second connecting portion is made of wire, The power module according to claim 3.

6. If we consider the arrangement direction of the plurality of second power semiconductor elements as the first direction when viewed from the thickness direction, and the direction intersecting the first direction as the second direction, In the second direction, the second drive layer is arranged adjacent to the conductive layer, The second control layer is positioned on the opposite side of the conductive layer from the second drive layer. A power module according to any one of claims 1 to 5.

7. The second control layer has the second bypass section, The second bypass portion is located in the second direction on the side opposite to the second drive layer with respect to the second wiring portion of the second control layer. The power module according to claim 6.

8. The second drive layer has the second bypass portion, The second bypass portion is positioned in the second direction on the side opposite to the conductive layer with respect to the second control layer. The power module according to claim 7.

9. The second bypass section is not connected to the second control-side connecting member and the second drive-side connecting member. A power module according to any one of claims 1 to 8.

10. The second control terminal and the second control layer are electrically connected by a second control terminal-side connecting member. The second detection terminal and the second drive layer are electrically connected by a second detection terminal side connecting member. A power module according to any one of claims 1 to 9.

11. The second control layer has a second bypass portion and a third connection portion formed at the tip of the second bypass portion to which the second control terminal side connection member is connected. The power module according to claim 10.

12. The second drive layer has a second bypass portion and a fourth connection portion formed at the tip of the second bypass portion to which the second detection terminal side connection member is connected. The power module according to claim 11.

13. The substrate comprises a first substrate and a second substrate, The first substrate and the second substrate each have a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer arranged on their respective main surfaces. The plurality of first power semiconductor elements are arranged on the first mounting layer of the first substrate and the first mounting layer of the second substrate, respectively, spaced apart from each other in one direction. The plurality of second power semiconductor elements are arranged on the second mounting layer of the first substrate and the second mounting layer of the second substrate, respectively, spaced apart from each other in one direction. The first substrate and the second substrate are arranged spaced apart from each other in the one direction. In the aforementioned one direction, the second mounting layer of the first substrate and the second mounting layer of the second substrate are electrically connected by a second mounting layer connecting member. The second control layer of the first substrate and the second control layer of the second substrate are electrically connected by a second control layer connecting member. The second drive layer of the first substrate and the second drive layer of the second substrate are electrically connected by a second drive layer connecting member. One of the second control layer and the second drive layer of the first substrate has the second bypass portion, The other of the second control layer and the second drive layer of the second substrate has the second bypass portion. The power module according to claim 2.

14. In a direction intersecting the aforementioned one direction when viewed from the thickness direction, the second control terminal and the second detection terminal are arranged so as to overlap with the first substrate. The power module according to claim 13.

15. The second power semiconductor device consists of a SiCMOSFET. A power module according to any one of claims 1 to 14.

Images