Joining system and joining method

Abstract

To provide a bonding system and a bonding method capable of preventing bonding failure between a substrate and a chip.SOLUTION: A chip bonding system comprises: a stage 315 which holds a substrate WT in such a posture that a bonding surface WTf of the substrate faces vertically downward; a frame support part 3331, located vertically below the stage 315, which supports a holding frame 112 for holding a sheet TE where a plurality of chips CP is adhered in such a posture that bonding surfaces CPf of the chips face vertically upward; a head 3033H which makes contact with a side opposite to the chips CP side of the sheet TE; and a head driving part 3036 which drives the head 3033H in a direction closer to the stage 315 so as to push one of the chips CP from a side opposite to the chips CP side of the sheet TE toward the substrate WT side, and to bring the bonding surface CPf of the chip CP into contact with the bonding surface WTf of the substrate WT, bonding the chip CP onto the substrate WT.SELECTED DRAWING: Figure 17A

Description

Technical Field

[0001] The present invention relates to a bonding system and a bonding method.

Background Art

[0002] A method has also been proposed in which, after subjecting the bonding surfaces of two adherends to plasma treatment, the bonding surfaces of the two adherends are brought into contact with each other for bonding (see, for example, Patent Document 1). Here, the plasma treatment is performed by exposing to any of the plasmas of oxygen, argon, NH3, and CF4 RIE (Reactive Ion Etching). And, a method is being provided in which, after subjecting the bonding surface of a chip to be bonded to a substrate to plasma treatment, the bonding surface of the chip is brought into contact with the substrate to bond the chip to the substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, with the method described in Patent Document 1, there is a risk that poor bonding between the chip and the substrate may occur.

[0005] The present invention has been made in view of the above circumstances, and an object thereof is to provide a bonding system and a bonding method in which the occurrence of poor bonding between a substrate and a chip is suppressed.

Means for Solving the Problems

[0006] To achieve the above object, a bonding system according to the present invention is a bonding system for bonding a chip to a substrate, comprising <s a substrate support portion that holds the substrate in a posture in which the cleaned bonding surface of the substrate faces vertically downward, A frame support portion is positioned vertically below the substrate support portion and supports a holding frame that holds a sheet to which a plurality of chips are attached in a position where the cleaned bonding surfaces of the chips face vertically upward, Multiple heads that contact the sheet on the side opposite to the chip side, The head drive unit drives the head toward the substrate support portion, thereby pushing one of the chips toward the substrate from the side opposite to the plurality of chips on the sheet, bringing the bonding surface of the chip into contact with the bonding surface of the substrate, thereby bonding the chip to the substrate. When one chip is pushed toward the substrate from the side opposite to the multiple chips on the sheet, the substrate support portion holds the substrate in a position where the substrate's bonding surface faces vertically downward, so as not to allow particles detached from the chip or the sheet to adhere to the bonding surface of the substrate. The sheet is located vertically below the chip, The aforementioned chip of With the bonding surface of the chip positioned vertically upward, the substrate is moved from vertically downward to vertically upward. Furthermore, the central portion of the chip is pressed toward the substrate from the opposite side of the sheet from the multiple chips, and from the central portion of the chip By bringing it into contact with the bonding surface of the aforementioned substrate, By advancing the bonding of the chip from the central part to the substrate, the chip Bonded to the aforementioned substrate vinegar ru.

[0007] From another perspective, the joining method according to the present invention is: A bonding method for bonding a chip to a substrate, The bonding process includes, in order to prevent particles detaching from the chip or sheet from adhering to the cleaned bonding surface of the substrate, when a single chip is pushed toward the substrate from the side opposite to the multiple chips on a sheet to which multiple chips are attached in a position where the cleaned bonding surfaces of the chips face vertically upward, the substrate is held in a position where the bonding surface of the substrate faces vertically downward, the sheet is positioned vertically below the substrate, and with the head in contact with the side of the sheet opposite to the chip side, the head is moved toward the substrate, thereby pushing a single chip toward the substrate from the side opposite to the multiple chips on the sheet and bringing the bonding surface of the chip into contact with the bonding surface of the substrate, thereby bonding the chip to the substrate. The sheet is located vertically below the chip, In the aforementioned joining process, The aforementioned chip of With the bonding surface of the chip positioned vertically upward, the substrate is moved from vertically downward to vertically upward. Furthermore, the central portion of the chip is pressed toward the substrate from the opposite side of the sheet from the multiple chips, and from the central portion of the chip By bringing it into contact with the bonding surface of the aforementioned substrate, By advancing the bonding of the chip from the central part to the substrate, the chip Bonded to the aforementioned substrate vinegar ru. [Effects of the Invention]

[0008] According to the present invention, the occurrence of bonding defects between the substrate and the chip is suppressed. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic diagram of a chip bonding system according to an embodiment of the present invention. [Figure 2] This is a schematic diagram showing a part of the chip bonding system according to an embodiment, viewed from the side. [Figure 3A] This is a plan view of the chip holding part according to the embodiment. [Figure 3B] This is a cross-sectional view showing a part of the chip transport device according to an embodiment. [Figure 4A] This is a cross-sectional view showing the head of a bonding apparatus according to an embodiment. [Figure 4B] It is a plan view showing a head of a bonding apparatus according to an embodiment. [Figure 5] It is a schematic configuration diagram of an activation processing apparatus according to an embodiment. [Figure 6] It is an operation explanatory diagram of an activation processing apparatus according to an embodiment. [Figure 7] It is a block diagram showing a control unit according to an embodiment. [Figure 8] It is a flowchart showing an example of a flow of a chip bonding method according to an embodiment. [Figure 9A] It is a schematic side view showing a state of irradiating a particle beam in an activation processing apparatus according to an embodiment. [Figure 9B] It is a schematic plan view showing a state of irradiating a particle beam in an activation processing apparatus according to an embodiment. [Figure 10A] It is a schematic side view showing a state of reversing a sheet in an activation processing apparatus according to an embodiment. [Figure 10B] It is a schematic side view showing a state of irradiating nitrogen radicals in an activation processing apparatus according to an embodiment. [Figure 11A] It is a schematic plan view showing a state where a chip is supplied from a chip supply unit in a chip bonding system according to an embodiment. [Figure 11B] It is a schematic side view showing a state where a chip is supplied from a chip supply unit in a chip bonding system according to an embodiment. [Figure 12A] It is a schematic plan view showing a state where a chip is transferred from a chip transfer unit to a head in a chip bonding system according to an embodiment. [Figure 12B] It is a schematic side view showing a state where a chip is transferred from a chip transfer unit to a head in a chip bonding system according to an embodiment. [Figure 13] It is a schematic configuration diagram of an activation processing apparatus according to a comparative example. [Figure 14A] It is a schematic view showing a state before moving a holding frame regarding a support portion of a cleaning apparatus according to a modification example. [Figure 14B]This is a schematic diagram showing the support section of the cleaning device in a modified form, with the holding frame moved. [Figure 14C] This is a schematic diagram showing how the frame support and inner support parts of the support section of the cleaning device in a modified form are rotated. [Figure 15A] This is a schematic diagram of the substrate to be diced in a modified example. [Figure 15B] This is a schematic diagram of the modified chip CP. [Figure 16A] This is a schematic cross-sectional view of the chip holding portion according to a modified example. [Figure 16B] This is a schematic cross-sectional view of the chip holding portion according to a modified example. [Figure 17A] This is a schematic diagram showing a part of the bonding apparatus related to a modified example. [Figure 17B] This is a schematic diagram showing a part of the bonding apparatus related to a modified example. [Figure 17C] This is a schematic diagram showing a part of the bonding apparatus related to a modified example. [Modes for carrying out the invention]

[0010] The following describes a chip bonding system according to an embodiment of the present invention with reference to the drawings. The chip bonding system according to this embodiment is a system for mounting a chip on a substrate. Here, the substrate corresponds to the first object to be bonded, and the chip corresponds to the second object to be bonded. The chip is, for example, a semiconductor chip supplied from a diced substrate. The chip can be a chip in which only an insulating material is exposed on the bonding surface to be bonded to the substrate, or a chip in which both an insulating material and a conductive material are exposed. Here, the insulating material can be an oxide such as SiO2 or Al2O3, a nitride such as SiN or AlN, an oxynitride such as SiON, or a resin. The conductive material can be a semiconductor material such as Si or Ge, or a metal such as Cu, Al, or solder. In other words, the chip may have multiple types of regions made of different materials formed on its bonding surface. Specifically, the chip may have electrodes and an insulating film on its bonding surface, and the insulating film may be formed from an oxide such as SiO2 or Al2O3, or a nitride such as SiN or AlN. This chip bonding system involves activating both the mounting surface on the substrate where the chip is mounted and the bonding surface of the chip, then bonding the chip to the substrate by contact or pressure. Subsequently, or simultaneously, heating is applied to firmly bond the chip to the substrate.

[0011] As shown in Figure 1, the chip bonding system 1 according to this embodiment comprises a chip supply device 10, a chip transport device 39, a bonding device 30, an activation processing device 60, a transport device 70, an input / output unit 80, a cleaning device 85, and a control unit 90. The transport device 70 has a transport robot 71 having an arm that grasps a holding frame 112 that holds a sheet TE to which a substrate WT or chip CP is attached. Here, the sheet TE is formed from, for example, resin. As shown by arrow AR11 in Figure 1, the transport robot 71 is capable of moving the holding frame 112 that holds the sheet TE to which the substrate WT or chip CP is attached, received from the input / output unit 80, to a position for transfer to the activation processing device 60, the cleaning device 85, the bonding device 30, and the chip supply device 10, respectively. Here, the holding frame 112 that holds the sheet TE to which the chip CP is attached corresponds to the object containing the chip CP.

[0012] When the transport robot 71 receives the substrate WT from the loading / unloading unit 80, it moves to a position to transfer the substrate WT to the activation processing device 60 while grasping the received substrate WT, and transfers the substrate WT to the activation processing device 60. After the activation processing of the mounting surface WTf of the substrate WT is completed in the activation processing device 60, the transport robot 71 receives the substrate WT from the activation processing device 60 and transfers the received substrate WT to the cleaning device 85. Furthermore, after the water washing of the substrate WT is completed in the cleaning device 85, the transport robot 71 receives the substrate WT from the cleaning device 85, inverts the substrate WT while grasping the received substrate WT, and then moves to a position to transfer it to the bonding device 30. Finally, the transport robot 71 transfers the substrate WT to the bonding device 30.

[0013] Furthermore, when the transport robot 71 receives the holding frame 112 that holds the sheet TE with the chip CP attached from the loading / unloading unit 80, it grasps the received holding frame 112 and moves it to a position to transfer the holding frame 112 to the activation processing device 60, and then transfers the holding frame 112 to the activation processing device 60. In addition, after the activation processing of the bonding surface of the chip CP attached to the sheet TE is completed in the activation processing device 60, the transport robot 71 receives the holding frame 112 from the activation processing device 60 and transfers the received holding frame 112 to the chip supply device 10. Furthermore, a HEPA (High Efficiency Particulate Air) filter (not shown) is installed inside the transport device 70. As a result, the inside of the transport device 70 is an atmospheric pressure environment with extremely few particles.

[0014] The cleaning device 85 includes a stage 852 that supports the substrate WT, a stage drive unit 853 that rotates the stage 852, and a cleaning head 851 positioned vertically above the stage 852 and discharging water vertically downward. The cleaning device 85 washes the substrate WT with water by rotating the stage 852 with the stage drive unit 853 while discharging water from the cleaning head 851 towards the substrate WT, with the substrate WT supported on the stage 852.

[0015] The chip supply device 10 is a second workpiece supply device that cuts out one chip CP from a plurality of chips CP produced by dicing a substrate and supplies the chip CP to the bonding device 30. Here, dicing is a process of cutting a substrate on which multiple electronic components are fabricated in the vertical and horizontal directions to form chips. Furthermore, the chip CP may have multiple types of regions made of different materials formed on the bonding surface CPf, for example. That is, the bonding surface CPf of the chip CP may have a region made of insulating material and a region made of metal. As shown in Figure 2, the chip supply device 10 has a chip supply unit 11. The chip supply unit 11 has a holding frame 112 that holds a sheet TE to which a plurality of chips CP are attached, a frame holding unit 119 that holds the holding frame 112, a pickup mechanism 111 that picks up one chip CP from the plurality of chips CP, and a cover 114. The chip supply unit 11 also has a holding frame drive unit 113 that drives the holding frame 112 in a direction that rotates it in the XY direction or around the Z axis. The frame holding portion 119 holds the holding frame 112 in a position where the surface on which multiple chips CP are attached to the sheet TE is facing vertically upward (+Z direction). The holding frame 112 and the frame holding portion 119 constitute a sheet holding portion that holds the sheet TE, to which each of the multiple chips CP is attached on the side opposite to the bonding surface CPf, in a position where the bonding surface CPf faces vertically upward.

[0016] The pickup mechanism 111 separates one of the multiple chips CP from the sheet TE by cutting it from the side of the sheet TE opposite to the side of the multiple chips CP. Here, the pickup mechanism 111 cuts out the chip CP by holding the peripheral part, which is a third part different from the central part, which is a first part held by the head 33H described later, on the side of the joint surface CPf of the chip CP. The pickup mechanism 111 has needles 111a that are movable in the vertical direction as shown by arrow AR14 in Figure 2. The cover 114 is positioned to cover the vertically above the multiple chips CP, and a hole 114a is provided in the part facing the pickup mechanism 111. There are, for example, four needles 111a. However, the number of needles 111a may be three or five or more. The pickup mechanism 111 supplies chips CP by inserting a needle 111a into the sheet TE from vertically below (-Z direction) and lifting the chips CP vertically upward (+Z direction). Each chip CP attached to the sheet TE is then pushed out one by one through the hole 114a in the cover 114 by the needle 111a and handed over to the chip transport device 39. The retaining frame drive unit 113 changes the position of the chips CP located vertically below the needle 111a by driving the retaining frame 112 in a direction that rotates it in the XY direction or around the Z axis.

[0017] The chip transport device (also called a turret) 39 is a second workpiece transport device that transports the chips CP supplied from the chip supply unit 11 to a transfer position Pos1 where the chips CP are transferred to the head 33H of the bonding unit 33 of the bonding device 30. As shown in Figure 1, the chip transport device 39 has two long plates 391, an arm 394, a chip holding unit 393 provided at the tip of the arm 394, and a plate drive unit 392 that rotates the two plates 391 simultaneously. The two plates 391 are long rectangular boxes, and one end rotates with the other end, which is located between the chip supply unit 11 and the head 33H, as the pivot point. The two plates 391 are arranged, for example, so that their longitudinal directions form a 90-degree angle with each other. Note that the number of plates 391 is not limited to two, but may be three or more.

[0018] As shown in Figure 3A, the chip holding section 393 is a second workpiece holding section provided at the tip of the arm 394 and having two leg pieces 393a for holding the chip CP. As shown in Figure 3B, the plate 391 is capable of accommodating the long arm 394 inside. Inside the plate 391, an arm drive section 395 is provided to drive the arm 394 along the longitudinal direction of the plate 391. As a result, the chip transport device 39 can use the arm drive section 395 to either extend the tip of the arm 394 outwards from the plate 391 or retract the tip of the arm 394 inside the plate 391. When the chip transport device 39 rotates the plate 391, as shown by arrow AR25 in Figure 3B, it retracts the arm 394 into the plate 391 and stores the chip holding section 393 inside the plate 391. This suppresses the adhesion of particles to the chip CP during transport. Furthermore, the two leg pieces 393a may be provided with suction grooves (not shown). In this case, the chip CP is held by suction on the leg piece 392a, so that the chip CP can be transported without displacement. In addition, to prevent the chip CP from flying out due to the centrifugal force generated when the plate 391 rotates, a projection (not shown) may be provided at the tip of the leg piece 393a.

[0019] Here, as shown in Figure 1, the pickup mechanism 111 and the head 33H are positioned in the Z-axis direction such that they overlap with the trajectory OB1 traced by the tip of the arm 394 when the plate 391 rotates. When the chip transport device 39 receives the chip CP from the pickup mechanism 111, it transports the chip CP to a transfer position Pos1 that overlaps with the head 33H by rotating the plate 391 around axis AX, as shown by arrow AR1 in Figure 1.

[0020] The bonding apparatus 30 is a chip bonding apparatus comprising a stage unit 31, a bonding section 33 having a head 33H, and a head drive unit 36 ​​for driving the head 33H. The head 33H has, for example, a chip tool 411, a head body 413, a chip support 432a, and a support drive unit 432b, as shown in Figure 4A. The chip tool 411 is formed from, for example, silicon (Si). The head body 413 has a holding mechanism 440 having a suction part for adsorbing and holding the chip CP to the chip tool 411, and a suction part (not shown) for fixing the chip tool 411 to the head body 413 by vacuum suction. The head body 413 also has a ceramic heater, a coil heater, etc. built into it. The chip tool 411 has a through hole 411a formed at a position corresponding to the holding mechanism 440 of the head body 413, and a through hole 411b into which the chip support 432a is inserted.

[0021] The chip support portion 432a is, for example, a cylindrical suction post, and is a component support portion provided at the tip of the head 33H that is movable in the vertical direction. The chip support portion 432a supports the central portion, which is the first portion on the side of the chip CP opposite to the bonding surface CPf. As shown in Figure 4B, for example, one chip support portion 432a is provided in the central portion.

[0022] The support unit drive unit 432b drives the chip support unit 432a vertically and, with the chip CP placed on the tip of the chip support unit 432a, depressurizes the inside of the chip support unit 432a to attract the chip CP to the tip of the chip support unit 432a. The support unit drive unit 432b is positioned at the transfer position to the head 33H (see Pos1 in Figure 1) with the chip holding unit 393 of the chip transport device 39 holding the chip CP, and with the tip of the chip support unit 432a supporting the center of the chip CP, it moves the chip support unit 432a vertically upward from the chip holding unit 393. As a result, the chip CP is transferred from the chip holding unit 393 of the chip transport device 39 to the head 33H.

[0023] The head drive unit 36 ​​moves the head 33H, which holds the chip CP transferred at the transfer position Pos1 (see Figure 2), vertically upward (+Z direction), thereby bringing the head 33H closer to the stage 315 and mounting the chip CP onto the mounting surface WTf of the substrate WT. More specifically, the head drive unit 36 ​​moves the head 33H, which holds the chip CP, vertically upward (+Z direction), thereby bringing the head 33H closer to the stage 315 and bringing the chip CP into contact with the mounting surface WTf of the substrate WT, thereby bonding it to the substrate WT. Here, the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP that is bonded to the substrate WT are activated by the activation treatment device 60. Furthermore, after the activation treatment, the mounting surface WTf of the substrate WT is washed with water by the cleaning device 85. Therefore, by bringing the bonding surface CPf of the chip CP into contact with the mounting surface WTf of the substrate WT, the chip CP is bonded to the substrate WT via hydroxyl groups (OH groups), a so-called hydrophilic bonding.

[0024] The stage unit 31 includes a stage 315 that holds the substrate WT in a position where the mounting surface WTf on which the chip CP is mounted faces vertically downward (-Z direction), and a stage drive unit 320 that drives the stage 315. The stage 315 can move in the X, Y, and rotational directions. This allows the relative positional relationship between the bonding unit 33 and the stage 315 to be changed, and the mounting position of each chip CP on the substrate WT can be adjusted.

[0025] The activation apparatus 60 performs an activation process to activate the mounting surface WTf of the substrate WT or the bonding surface CPf of the chip CP. The activation apparatus 60 sets the holding frame 112 that holds the sheet TE to which the substrate WT or chip CP is attached on a single processing surface without arranging them opposite each other and performs the activation process. That is, the activation apparatus 60 does not perform the activation process with the holding frame 112 that holds two substrate WTs or a sheet TE to which two chip CPs are attached facing each other. If they are arranged facing each other and processed, the material from one substrate WT or chip CP will adhere to the other chip CP or substrate WT, resulting in the mixing of multiple materials. As shown in Figure 5, the activation apparatus 60 has a chamber 64, a support part 62 that supports the holding frame 112, a particle beam source 61, a beam source transport part 63, and a radical source 67. The chamber 64 is connected to a vacuum pump 652 via an exhaust pipe 651. Then, when the vacuum pump 652 is activated, the gas inside the chamber 64 is discharged outside the chamber 64 through the exhaust pipe 651, and the air pressure inside the chamber 64 is reduced (depressurized).

[0026] The support portion 62 is frame-shaped and includes a frame holding portion 621 that holds the holding frame 112 on the inside, a cover 622, and a frame holding portion drive portion 623 that supports the frame holding portion 621 and rotates the frame holding portion 621 around an axis perpendicular to its thickness direction, as shown by arrow AR33 in Figure 5. This support portion 62 corresponds to the object support portion that supports the holding frame 112 that holds the sheet TE to which the chip CP is attached. A chip holding portion that holds the chip CP is also formed. Furthermore, when a substrate WT is inserted, the support portion 62 supports the substrate WT with the frame holding portion 621 holding the periphery of the substrate WT. The support portion 62 supports the holding frame 112 in a state where it is set on a single processing surface without the holding frame 112 that holds the sheet TE to which the chip CP is attached being placed opposite each other. The cover 622 is formed, for example, from glass, and covers the area outside the portion of the sheet TE to which the chip CP is attached, as well as the holding frame 112, which holds the sheet TE to which the chip CP is attached, while the holding frame 112 is held by the frame holding portion 621. Here, if the multiple chip CPs are diced from a circular substrate (not shown) in plan view, they are attached to the circular area of ​​the sheet TE in plan view. In this case, the cover 622 is shaped to cover the area outside the circular area of ​​the sheet TE to which the multiple chip CPs are attached in plan view. This suppresses the irradiation of parts of the sheet TE other than the portion to which the chip CP is attached by the particle beam source 61.

[0027] The particle beam source 61 is, for example, a fast atomic beam (FAB) source and includes a discharge chamber 612, electrodes 611 placed inside the discharge chamber 612, a beam source drive unit 613, and a gas supply unit 614 that supplies nitrogen gas into the discharge chamber 612. The peripheral wall of the discharge chamber 612 is provided with FAB emission ports 612a that emit neutral atoms. The discharge chamber 612 is made of carbon material. Here, the discharge chamber 612 is a long box shape, and a plurality of FAB emission ports 612a are arranged in a straight line along its longitudinal direction. The beam source drive unit 613 includes a plasma generation unit (not shown) that generates a nitrogen gas plasma inside the discharge chamber 612, and a DC power supply (not shown) that applies a DC voltage between the electrodes 611 and the peripheral wall of the discharge chamber 612. The beam source drive unit 613 generates a nitrogen gas plasma in the discharge chamber 612 and applies a DC voltage between the peripheral wall of the discharge chamber 612 and the electrode 611. At this time, nitrogen ions in the plasma are attracted to the peripheral wall of the discharge chamber 612. When nitrogen ions heading towards the FAB discharge port 612a pass through the FAB discharge port 612a, they receive electrons from the peripheral wall of the discharge chamber 612, which is made of carbon material, on the outer periphery of the FAB discharge port 612a. These nitrogen ions are then released outside the discharge chamber 612 as electrically neutralized nitrogen atoms. However, some nitrogen ions are unable to receive electrons from the peripheral wall of the discharge chamber 612 and are released outside the discharge chamber 612 as nitrogen ions.

[0028] Here, the particle beam source 61 is set such that the incident angle of the particle beam with respect to a virtual plane S1 which includes at least one of the bonding surfaces CPf of each of the at least one chip CP attached to the sheet TE is between 30 degrees and 80 degrees. That is, the angle (incidence angle) θ1 between the irradiation axis J1 of the particle beam and the normal direction N1 of the virtual plane S1 is set to be between 30 degrees and 80 degrees. Furthermore, as shown in Figure 6, the incident angle θ1 of the particle beam is set such that the following relationship (1) holds, where L1 is the distance between adjacent chips CP and T1 is the thickness of the chip CP.

[0029]

number

[0030] This suppresses direct irradiation of the particle beam onto the sheet TE. Consequently, the generation of impurities from the sheet TE caused by irradiation with the particle beam is suppressed, which has the advantage of suppressing damage to the junction surface CPf of the chip CP caused by impurities generated from the sheet TE.

[0031] The beam source transport unit 63 includes a long support rod 631 that is inserted through a hole 64a in the chamber 64 and supports the particle beam source 61 at one end, a support body 632 that supports the support rod 631 at the other end, and a support body drive unit 633 that drives the support body 632. The beam source transport unit 63 also has a bellows 634 interposed between the outer circumference of the hole 64a in the chamber 64 and the support body 632 to maintain the vacuum level inside the chamber 64. As shown by arrow AR31 in Figure 5, the support body drive unit 633 drives the support body 632 in the direction in which the support rod 631 is inserted into and removed from the chamber 64, thereby changing the position of the particle beam source 61 inside the chamber 64 as shown by arrow AR32 in Figure 5. Here, the beam source transport unit 63 moves the particle beam source 61 in a direction perpendicular to the direction in which its multiple FAB emission ports 612a are aligned.

[0032] Incidentally, as mentioned above, the particle beam source 61 has a plurality of FAB emission ports 612a arranged in a straight line. The particle beam source 61 is moved in a direction perpendicular to the direction in which the plurality of FAB emission ports 612a are arranged. As a result, the shape of the area irradiated by the particle beam becomes rectangular. In contrast, if the plurality of chips CP are diced from a substrate (not shown) that is circular in plan view, they are attached to a circular area in plan view on the sheet TE. Therefore, in order to irradiate the entire plurality of chips CP attached to the sheet TE with the particle beam, it is necessary to set the area irradiated by the particle beam to a rectangular area that includes the circular area in plan view to which the plurality of chips CP are attached. In this case, in the configuration without the cover 622 mentioned above, the particle beam will irradiate the area outside the plurality of chips CP on the sheet TE or the holding frame 112, making it easier for impurities to be generated from the sheet TE. In contrast, in this embodiment, the cover 622 covers the area outside the plurality of chips CP on the sheet TE or the holding frame 112. This blocks the particle beam irradiated onto the outer regions of the multiple chip CPs in the sheet TE or the holding frame 112, thereby suppressing the generation of impurities from the sheet TE or the holding frame 112.

[0033] The radical source 67 may employ an ICP (Inductively Coupled Plasma) plasma source having a plasma chamber 671, a glass window 674, a trap plate 675, a waveguide 673, and a magnetron 672. The plasma chamber 671 is connected to the waveguide 673 via the glass window 674. The radical source 677 also has a gas supply unit 677 that supplies nitrogen gas into the plasma chamber 671 via a supply pipe 676. Microwaves generated by the magnetron 672 are introduced into the plasma chamber 671 through the waveguide 673. For example, a magnetron 672 that generates microwaves with a frequency of 2.45 GHz can be used. In this case, the power supplied from the magnetron 672 to the plasma chamber 671 is set to, for example, 2.5 kW. When microwaves are introduced from the waveguide 673 with nitrogen gas introduced into the plasma chamber 671, the microwaves form a plasma PLM in the plasma chamber 671. The trap plate 675 traps ions contained in the plasma PLM, allowing only radicals to flow down into the chamber 64. In other words, plasma is generated in the plasma chamber 671, and only radicals contained in the plasma flow down to the bottom of the plasma chamber 671.

[0034] The radical source 67 is not limited to a configuration comprising a magnetron 672 and a waveguide 673, but may also comprise, for example, a flat plate electrode provided on a glass window 674 and a high-frequency power supply electrically connected to the flat plate electrode. In this case, the high-frequency power supply can be one which applies a high-frequency bias of, for example, 27 MHz. The power supplied from the high-frequency power supply to the plasma chamber 671 is set to, for example, 250 W. When irradiating with a particle beam, the pressure inside the chamber 64 is vacuumed to around 10⁻³ Pa using, for example, a turbomolecular pump, but during radical processing, the pressure inside the chamber 64 is increased to several tens of Pa.

[0035] The control unit 90 includes an MPU (Micro Processing Unit), a main memory unit, an auxiliary memory unit, an interface, and a bus connecting each unit. Here, the main memory unit consists of volatile memory and is used as the working area of ​​the MPU. The auxiliary memory unit consists of non-volatile memory and stores the program executed by the MPU. The auxiliary memory unit also stores information indicating the first distance and second distance, which will be described later. As shown in Figure 7, the control unit 90 is connected to the head drive unit 36, the stage drive unit 320, the plate drive unit 392, the arm drive unit 395, the pickup mechanism 111, the holding frame drive unit 113, the cleaning head 851, the stage drive unit 853, the beam source drive unit 613, the beam source transport unit 63, the frame holding unit drive unit 623, the magnetron 672, and the transport robot 71. The MPU then reads the program stored in the auxiliary memory into the main memory and executes it, thereby outputting control signals via the interface to the head drive unit 36, stage drive unit 320, plate drive unit 392, arm drive unit 395, pickup mechanism 111, holding frame drive unit 113, washing head 851, stage drive unit 853, beam source drive unit 613, beam source transport unit 63, frame holding unit drive unit 623, magnetron 672, and transport robot 71, respectively.

[0036] Next, the operation of the chip bonding system 1 according to this embodiment will be described with reference to Figures 8 to 12. The holding frame 112 that holds the substrate WT and the sheet TE to which the chip CP is attached is assumed to be fed in from the loading / unloading unit 80. First, as shown in Figure 8, the chip bonding system 1 performs a substrate mounting surface activation process (step S1) by feeding the substrate WT fed in from the loading / unloading unit 80 into the activation processing device 60, thereby activating the mounting surface WTf of the substrate WT. Here, the activation processing device 60 first supports the mounting surface WTf of the substrate WT in a position where it is facing vertically downwards in the support part 62, and irradiates the mounting surface WTf with a particle beam containing nitrogen atoms from the particle beam source 61. At this time, the power supplied to the particle beam source 61 is set to, for example, 1kV and 100mA. The flow rate of nitrogen gas introduced into the discharge chamber 612 of the particle beam source 61 is set to, for example, 100sccm. Then, while the particle beam from the particle beam source 61 irradiates the mounting surface WTf of the substrate WT, the particle beam source 61 is moved back and forth once at a speed of 1.2 to 14.0 mm / sec. Next, the activation processing device 60 inverts the substrate WT held in the frame holding part 621 so that the mounting surface WTf of the substrate WT faces vertically upward. Then, the activation processing device 60 irradiates the mounting surface WTf of the substrate WT with nitrogen radicals using the radical source 67. Here, the power supplied from the magnetron 672 to the plasma chamber 671 in the radical source 67 is set to, for example, 2.5 kW. If the radical source 67 is configured to include a flat plate electrode provided on the aforementioned glass window 674 and a high-frequency power supply electrically connected to the flat plate electrode, the power supplied from the high-frequency power supply to the plasma chamber 671 is set to, for example, 250 W. The flow rate of nitrogen gas introduced into the plasma chamber 671 is set to, for example, 100 sccm. Furthermore, the duration for which radical irradiation of the mounting surface WTf of the substrate WT is continued is set to, for example, 15 seconds. For example, if metal electrodes and insulating films are provided on both the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP, it is preferable to irradiate the mounting surface WTf of the substrate WT with a particle beam.

[0037] Next, the chip bonding system 1 feeds the activated substrate WT from the activation processing apparatus 60 into the cleaning apparatus 85 and performs a water cleaning process to clean the mounting surface WTf of the substrate WT with water (step S2). Here, the cleaning apparatus 85 cleans the substrate WT by rotating the stage 852 with the stage drive unit 853 while the substrate WT is supported on the stage 852, and by discharging water from the cleaning head 851 toward the substrate WT. As a result, a relatively large number of hydroxyl groups (OH groups) or water molecules adhere to the mounting surface WTf of the substrate WT.

[0038] Next, the chip bonding system 1 performs a substrate preparation process (step S3) in which it holds the substrate WT on the stage 315 of the bonding apparatus 30 and prepares to bond the chip CP to the substrate WT. At this time, the transport robot 71 receives the substrate WT from the cleaning apparatus 85 in a position where its mounting surface WTf faces vertically upward. Then, the transport robot 71 inverts the received substrate WT and holds it in a position where its mounting surface WTf faces vertically downward. Then, the transport robot 71 transfers the substrate WT to the stage 315 of the bonding apparatus 30 while its mounting surface WTf is still facing vertically downward.

[0039] Subsequently, the chip bonding system 1 performs a chip bonding surface activation process (step S4) by feeding the holding frame 112, which holds the sheet TE to which the chips CP attached are fed in from the loading / unloading unit 80, into the activation processing device 60, thereby activating the bonding surface CPf of the chips CP. Here, the activation processing device 60 first causes the support unit 62 to support the holding frame 112 in a position where one side of the sheet TE to which the chips CP are attached faces the particle beam source 61, that is, in a position facing vertically downward. Then, the activation processing device 60 performs a first activation process in which it irradiates the bonding surface CPf of each chip CP attached to the sheet TE with a particle beam from the particle beam source 61. Here, the activation processing device 60 prepares only one holding frame 112 to hold the sheet TE to which multiple chips CP are attached, and irradiates the chips CP attached to the sheet TE held in the prepared holding frame 112 with a particle beam. Furthermore, the activation processing device 60 moves the particle beam source 61 in the X-axis direction while irradiating the bonding surface CPf of the chip CP with a particle beam, as shown by arrow AR34 in Figures 9A and 9B. Here, the activation processing device 60 first irradiates the bonding surface CPf of all chip CPs attached to the tape TE with a particle beam while moving the particle beam source 61 in the +X direction, and then irradiates the bonding surface CPf of the chip CPs with a particle beam while moving the particle beam source 61 in the -X direction. The movement speed of the particle beam source 61 is set to, for example, 1.2 to 14.0 mm / sec. In addition, the angle (incident angle) θ1 between the irradiation axis J1 of the particle beam and the normal direction N1 of the virtual plane S1 shown in Figure 9(A) is set to be between 30 degrees and 80 degrees. The power supplied to the particle beam source 61 is set to, for example, 1kV and 100mA. The flow rate of nitrogen gas introduced into the discharge chamber 612 of the particle beam source 61 is set to, for example, 100 sccm. At this time, impurities CPA1 generated from the tip CP or sheet TE are blown away from the tip CP and do not return to the junction surface CPf side of the tip CP.

[0040] Next, as shown by arrow AR36 in Figure 10A, the activation apparatus 60 inverts the holding frame 112 held by the frame holding section 621 so that the bonding surface CPf of the chip CP attached to the sheet TE faces vertically upward. Then, as shown by arrow AR37 in Figure 10B, the activation apparatus 60 performs a second activation step in which nitrogen radicals are irradiated onto the bonding surface CPf of the chip CP using the radical source 67. Here, the power supplied to the plasma chamber 671 by the radical source 67, the flow rate of nitrogen gas introduced into the plasma chamber 671, and the irradiation time of nitrogen radicals are set to the same conditions as, for example, the substrate mounting surface activation step described above.

[0041] Returning to Figure 8, the next step is to perform a chip preparation process (step S5) in which the chip bonding system 1 prepares to bond the chip CP to the substrate WT by having the holding frame 112, which holds the sheet TE with the chip CP attached, hold the holding frame 112 in the chip supply unit 11 of the chip supply device 10. At this time, the transport robot 71 receives the holding frame 112 that holds the sheet TE from the activation processing device 60 in an orientation where the bonding surface CPf of the chip CP faces vertically upward. After that, the transport robot 71 transfers the received holding frame 112 to the chip supply unit 11 of the chip supply device 10.

[0042] Next, the chip bonding system 1 performs a chip bonding process (step S6) in which the chip CP, whose bonding surface CPf has been activated by the activation processing device 60, is brought into contact with the mounting surface WTf of the substrate WT to bond it to the substrate WT. Here, the chip bonding system 1 first positions one plate 391 of the chip transport device 39 toward the chip supply unit 11. Next, the pickup mechanism 111 moves vertically upward to cut out one chip CP from the sheet TE on the side opposite to the multiple chip CPs, and performs a chip supply process (second workpiece supply process) in which one chip CP is separated from the sheet TE. In this state, the chip transport device 39 extends the arm 394 from the plate 391. At this time, the needle 111a of the pickup mechanism 111 is positioned between the two leg pieces 393a of the chip holding unit 393. In this way, as shown in Figures 11A and 11B, the chip CP is ready to be transferred to the chip holding unit 393. When the pickup mechanism 111 is moved vertically downward from this state, the chip CP is transferred to the chip holding section 393.

[0043] Next, the chip bonding system 1 rotates the plate 391 in the direction of arrow AR1 in Figure 11A. At this time, as shown in Figure 12A, the chip holding portion 393 at the tip of the arm 394 of the chip transport device 39 is positioned at the transfer position Pos1, which is vertically above the head 33H of the bonding unit 33. That is, the chip transport device 39 transports the chip CP received from the chip supply unit 11 to the transfer position Pos1, where the chip CP is transferred to the head 33H. Then, the head drive unit 36 ​​moves the bonding unit 33 vertically upward, bringing the head 33H closer to the chip holding portion 393 of the chip transport device 39. Next, the support drive unit 432b moves the chip support portion 432a vertically upward. As a result, the chip CP held in the chip holding portion 393 is positioned vertically above the chip holding portion 393, supported by the upper end of the chip support portion 432a, as shown in Figure 12B. Next, the chip transport device 39 retracts the arm 394 into the plate 391. Then, the support drive unit 432b moves the chip support unit 432a vertically downward. As a result, the chip CP is held at the tip of the head 33H.

[0044] Subsequently, the chip bonding system 1 drives the stage 315 and rotates the bonding section 33 to perform alignment, correcting any relative misalignment between the chip CP and the substrate WT. Then, the chip bonding system 1 raises the head 33H to bond the chip CP to the substrate WT. At this point, the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP are hydrophilically bonded via hydroxyl groups (OH groups).

[0045] After the aforementioned series of steps are completed, the substrate WT with the chip CP mounted is removed from the chip bonding system 1 and then placed in a heat treatment device (not shown) for heat treatment. The heat treatment device performs heat treatment on the substrate WT under conditions such as a temperature of 350°C for 1 hour.

[0046] Next, we will describe the results of evaluating the bonding strength between the chip CP and substrate WT bonded by the chip bonding system according to this embodiment. Here, we will describe the evaluation results of the bonding strength between the chip CP and substrate WT bonded by the chip bonding method according to this embodiment, and the evaluation results of the bonding strength between the chip CP and substrate WT bonded by three types of chip bonding methods according to Comparative Examples 1, 2, and 3. First, we will describe the chip bonding methods according to Comparative Examples 1, 2, and 3.

[0047] The chip bonding method according to Comparative Example 1 differs from the chip bonding method according to the embodiment in that, in the chip bonding surface activation step explained with reference to Figure 8, an activation processing apparatus 9060 as shown in Figure 13 is used. This activation processing apparatus 9060 includes a chamber 9064, a stage 9621 that supports the holding frame 112, a high-frequency power supply 9061 that applies a high-frequency bias, and a gas supply unit 677 that supplies nitrogen gas into the chamber 9064 via a supply pipe 676. In Figure 13, components similar to those in the activation processing apparatus 60 according to the embodiment are denoted by the same reference numerals as in Figure 5. The high-frequency power supply 9061 applies a high-frequency bias to the chip CP attached to the supported sheet TE, which is held in the holding frame 112 supported by the stage 9621. The high-frequency power supply 9061 generates a high-frequency bias of, for example, 13.56 MHz. In this way, by applying a high-frequency bias to the chip CP with the high-frequency power supply 9061, a sheath region PLM9 is generated near the junction surface CPf of the chip CP and the sheet TE, where ions with kinetic energy repeatedly collide with the chip CP and the sheet TE. The junction surface CPf of the chip CP is then activated by the kinetic energy ions present in this sheath region PLM9. At this point, impurities CPA9 generated from the chip CP or sheet TE that are present in the sheath region PLM9 and ionized also collide with the junction surface CPf of the chip CP.

[0048] The chip bonding method according to Comparative Example 2 differs from the chip bonding method according to the embodiment in that, in the chip bonding surface activation step explained with reference to Figure 8, an activation apparatus is used in which the activation apparatus 9060 described above is equipped with the radical source 67 described in the embodiment. That is, in the chip bonding method according to Comparative Example 2, an activation treatment is performed on the bonding surface CPf of the chip CP by applying a high-frequency bias to the chip CP, and then nitrogen radicals are irradiated onto the bonding surface CPf of the chip CP.

[0049] The chip bonding method according to Comparative Example 3 differs from the chip bonding direction according to the embodiment in that, in the chip bonding surface activation step explained with reference to Figure 8, only the particle beam is irradiated onto the bonding surface CPf of the chip CP using the activation apparatus 60, and nitrogen radicals are not irradiated onto the bonding surface CPf of the chip CP. In Comparative Examples 1 to 3 and the chip bonding methods according to the embodiment, the activation apparatus 60 shown in Figure 5, used for irradiating the bonding surface CPf of the chip CP with nitrogen radicals, was configured to include a flat plate electrode provided on a glass window 674 and a high-frequency power supply electrically connected to the flat plate electrode, instead of the magnetron 672 and waveguide 673.

[0050] Next, we will describe the results of evaluating the bonding strength between chips CP and substrate WT bonded to each other by the chip bonding methods according to Comparative Examples 1 to 3 and the chip bonding method according to the embodiment. Here, a glass (SiO2) substrate was used as the substrate WT. As for the chips CP, we used chips in which only SiON was exposed on the bonding surface CPf, chips in which SiON and Cu were exposed on the bonding surface CPf, chips in which resin and Cu were exposed on the bonding surface CPf, chips in which SiON and an alloy mainly composed of lead and tin (hereinafter referred to as "solder") were exposed on the bonding surface CPf, and chips in which resin and solder were exposed on the bonding surface CPf. In other words, as chips CP, we used chips in which only a region made of SiON was present on the bonding surface CPf, chips in which a region made of SiON and a region made of Cu were formed on the bonding surface CPf, chips in which a region made of resin and a region made of Cu were formed on the bonding surface CPf, chips in which a region made of SiON and a region made of solder were formed on the bonding surface CPf, and chips in which a region made of resin and a region made of solder were formed on the bonding surface CPf. The bonding strength was evaluated for 40 different samples, from Sample 1 to Sample 40, each with a different combination of gas type used for activating the bonding surface CPf of the chip CP, the chip bonding method employed, and the type of chip CP.

[0051] Furthermore, in the chip bonding surface activation process according to Comparative Examples 1 and 2, the bias power of the high-frequency bias applied to the chip CP was set to 110W in both cases. The duration for which the high-frequency bias was applied to the chip CP was set to 30 seconds. In addition, the vacuum level inside the chamber 64 in the chip bonding surface activation process according to Comparative Examples 1 and 2 was set to 50 Pa in all cases. On the other hand, in the chip bonding surface activation process according to Comparative Example 3 and the embodiment, the vacuum level inside the chamber 64 during particle beam irradiation was set to 5.0 × 10⁻³ Pa in all cases. Furthermore, in the chip bonding surface activation process according to Comparative Example 2 and the embodiment, the power supplied from the high-frequency power supply to the plasma chamber 671 when irradiating with nitrogen radicals was set to 250W in both cases.

[0052] Furthermore, for all samples after the bonding of the chip CP to the substrate WT by the chip bonding methods according to Comparative Examples 1 to 3 and the chip bonding method according to the embodiment was completed, the substrate WT was heat-treated in a heat treatment apparatus at a temperature of 350°C for 1 hour. Table 1 below summarizes the materials exposed on the bonding surface CPf of the chip CP and the treatment conditions in the chip bonding surface activation process for each of the 40 types of samples 1 to 40. In Table 1, the column "Materials exposed on the bonding surface" indicates the materials exposed on the bonding surface CPf of the chip CP for each sample. The column "Chip bonding surface activation process" indicates the activation treatment method adopted in the chip bonding surface activation process for each sample. Specifically, "Comparative Example 1" indicates that the chip bonding surface activation process according to Comparative Example 1 was adopted, "Comparative Example 2" indicates that the chip bonding surface activation process according to Comparative Example 2 was adopted, and "Comparative Example 3" indicates that the chip bonding surface activation process according to Comparative Example 3 was adopted. Furthermore, "Embodiment" indicates that the chip bonding surface activation process according to the embodiment described using Figure 8 above was adopted. Furthermore, for samples 1 to 20, the gas introduced into chamber 9064 when a high-frequency bias is applied to the chip CP during the chip bonding surface activation process, or the gas introduced into the discharge chamber 612 of particle beam source 61 during particle beam irradiation, was nitrogen gas. On the other hand, for samples 21 to 40, the gas introduced into chamber 9064 when a high-frequency bias is applied to the chip CP during the chip bonding surface activation process, or the gas introduced into the discharge chamber 612 of particle beam source 61 during particle beam irradiation, was argon (Ar) gas.

[0053] [Table 1]

[0054] Furthermore, the bonding strength between the chip CP and the substrate WT for samples 1 to 40 was evaluated by measuring the bonding strength (converted to surface energy) using the crack-and-open method, which involves inserting a blade. In this crack-and-open method, first, the delamination length of the chip CP is measured when a blade, such as a razor blade, is inserted from the periphery of the chip CP into the bonding area of ​​the bonded chip CP and substrate WT. For example, a blade with a thickness of 100 μm was used. In addition, the delamination length from the blade contact point was measured when the blade was inserted at four locations on the periphery of the chip CP bonded to the substrate WT. Then, for each of the four locations on the periphery of the chip CP, the bonding strength between the chip CP and the substrate WT was evaluated by calculating the strength of the bonding interface between the chip CP and the substrate WT in terms of surface energy per unit area from the delamination length. When calculating the bonding strength (converted to surface energy) Eb from the delamination length, the following relationship formula (2) was used.

[0055]

number

[0056] Tables 2 and 3 show the average bonding strength (converted to surface energy) at four locations on the periphery of each chip CP for samples 1 through 40. In Tables 2 and 3, the "Sample Name" column corresponds to each of the samples 1 through 40 in Table 1. A higher bonding strength (converted to surface energy) for each sample indicates a stronger bonding strength between the chip CP and the substrate WT, and bulk failure is indicated as "Bulk Failure". In Tables 2 and 3, the "Bondability" column indicates whether the chip CP was able to bond to the substrate WT ("○") or not ("×"). Bonding strength is calculated only for samples where the chip CP was able to bond to the substrate WT.

[0057] [Table 2]

[0058] [Table 3]

[0059] From the evaluation results for samples 2 to 5, 7 to 10, 22 to 25, and 27 to 30 in Tables 2 and 3, it can be seen that when the chip bonding surface activation process according to Comparative Examples 1 and 2 is adopted, if Cu, resin, or solder is exposed on the bonding surface CPf of the chip CP, the chip CP cannot be bonded to the substrate WT. From this, it can be seen that when the chip bonding surface activation process according to Comparative Examples 1 and 2 is adopted, the damage to the bonding surface CPf due to impurities generated from Cu, resin, or solder colliding with the bonding surface CPf becomes large enough that the chip CP cannot be bonded to the substrate WT. However, from the evaluation results for samples 1, 6, 21, and 26, it can be seen that even when the chip bonding surface activation process according to Comparative Examples 1 and 2 is adopted, if only SiON is exposed on the bonding surface CPf of the chip CP, the chip CP can be bonded to the substrate WT.

[0060] On the other hand, from the evaluation results for samples 11 to 20 and 31 to 40 in Tables 2 and 3, it can be seen that when the chip bonding surface activation process according to Comparative Example 3 and the embodiment is adopted, the chip CP can be bonded to the substrate WT even when Cu, resin, or solder is exposed on the bonding surface CPf of the chip CP. This is thought to be because, when the bonding surface CPf of the chip CP is activated by irradiating it with a particle beam, a high-frequency bias is not applied to the chip CP, thus suppressing damage to the bonding surface CPf caused by impurities from Cu, resin, or solder colliding with the bonding surface CPf. From this, it can be said that when Cu, resin, or solder is exposed on the bonding surface CPf of the chip CP, adopting a method of activating the bonding surface CPf of the chip CP by irradiating it with a particle beam in the chip bonding surface activation process is important for achieving good bonding of the chip CP to the substrate WT.

[0061] Furthermore, comparing the bonding strength of samples 21 to 30 with that of samples 31 to 40, it can be seen that the bonding strength of samples 21 to 30 is higher than that of samples 31 to 40. From this, it can be seen that when irradiating the bonding surface CPf of the chip CP with a particle beam, nitrogen gas is preferable to Ar gas for introducing into the discharge chamber 612 of the particle beam source 61 from the viewpoint of improving the bonding strength between the chip CP and the substrate WT. Thus, the reason why the bonding strength between the chip CP and the substrate WT is improved when nitrogen gas is used compared to when Ar gas is used is thought to be that Ar has a larger mass than nitrogen, so even if OH groups are generated on the bonding surface CPf of the chip CP, they are blown away by collisions with Ar. In addition, comparing the bonding strength of samples 21 to 25 with that of samples 26 to 30, it can be seen that the bonding strength of samples 21 to 25 is higher than that of samples 26 to 30. From this, it can be seen that irradiating the bonding surface CPf of the chip CP with a particle beam, and then irradiating the bonding surface CPf with nitrogen radicals, is preferable from the viewpoint of improving the bonding strength between the chip CP and the substrate WT.

[0062] Furthermore, in the aforementioned materials 1 to 4, 6 to 9, 11 to 14, 16 to 19, 21 to 24, 25 to 29, 31 to 34, and 35 to 39, when the oxide SiON was replaced with oxide Si2 and nitride SiN and the same evaluation was performed, the same results as above were obtained. However, when oxygen gas was used instead of nitrogen gas, if metals such as Cu or solder were present on the junction surface CPf of the chip CP, they were oxidized by oxygen, resulting in poor connection resistance between the chip CP and the substrate WT. Similarly, even when the junction surface CPf of the chip CP was plasma-treated instead of irradiating it with a particle beam using the particle beam source 61 as described above, the best results were obtained when nitrogen gas was used. In other words, it is considered that using nitrogen gas is the most effective way to generate OH groups on the junction surface CPf of the chip CP without oxidizing metals such as Cu or solder, even if they are present on the junction surface CPf of the chip CP.

[0063] As described above, according to the chip bonding system 1 of this embodiment, in the activation processing apparatus 60, the support portion 62 holds the sheet TE to which the chip CP is attached in a position where the side to which the chip CP is attached faces the particle beam source 61. The particle beam source 61 then irradiates the bonding surface CPf of the chip CP attached to the sheet TE with a particle beam. That is, the bonding surface CPf of the chip CP attached to the sheet TE is activated by irradiating it with a particle beam. As a result, collision of impurities generated from the sheet TE or chip CP by the irradiation of the particle beam with the bonding surface CPf of the chip CP is suppressed, and damage to the bonding surface CPf of the chip CP caused by impurity collisions is suppressed. Therefore, the occurrence of bonding defects between the chip CP and the substrate WT is suppressed.

[0064] Furthermore, in the chip bonding system 1 according to this embodiment, the chip CP to be bonded to the substrate WT may be a chip CP in which multiple types of regions made of different materials are formed on its bonding surface CPf. In this case, the collision of impurities generated from each of the multiple types of regions on the bonding surface CPf of the chip CP with the bonding surface CPf of the chip CP is suppressed by irradiation with a particle beam, and damage to the bonding surface CPf of the chip CP caused by impurity collisions is suppressed.

[0065] Furthermore, in the chip bonding system 1 according to this embodiment, the particle beam source 61 is set such that the incidence angle θ1 of the particle beam with respect to a virtual plane S1 including at least one of the bonding surfaces CPf of the plurality of chips CP attached to the sheet TE is between 30 degrees and 80 degrees. This suppresses the irradiation of the sheet TE by the particle beam through the gaps between adjacent chips CP, thereby suppressing the generation of impurities from the sheet TE.

[0066] Furthermore, the activation apparatus 60 according to this embodiment has a cover 622 that covers the portion of the sheet TE excluding the portion to which the chip CP is attached, while the holding frame 112 that holds the sheet TE to which the chip CP is attached is held by the frame holding portion 621. This suppresses the generation of impurities from the sheet TE due to irradiation of the portion of the sheet TE excluding the portion to which the chip CP is attached with a particle beam.

[0067] Furthermore, in the activation apparatus 60 according to this embodiment, when the particle beam is irradiated onto the bonding surface CPf of the chip CP, the support portion 62 supports the holding frame 112 that holds the sheet TE to which the chip CP is attached, in a position where the bonding surface CPf of the chip CP faces vertically downward. The particle beam source 61 then irradiates the bonding surface CPf of the chip CP with a particle beam from vertically below the support portion 62. As a result, impurities generated by irradiating the sheet TE and chip CP with the particle beam fall vertically downward due to gravity, thereby suppressing the adhesion of impurities to the bonding surface CPf of the chip CP.

[0068] Furthermore, the particle beam irradiated by the particle beam source 61 according to this embodiment onto the bonding surface CPf of the chip CP contains nitrogen. This makes it possible to increase the bonding strength between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT, compared to, for example, the configuration in which a particle beam containing Ar is irradiated in the chip bonding surface activation process described above.

[0069] Furthermore, the activation apparatus 60 according to this embodiment further includes a radical source for irradiating the bonding surface CPf of the chip CP with nitrogen radicals. This makes it possible to increase the bonding strength between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT, compared to, for example, the configuration in the aforementioned chip bonding surface activation step in which only a particle beam containing nitrogen is irradiated.

[0070] Incidentally, if the particle beam source 61 is, for example, an ion gun, the particle beam spreads too much, and the particle beam irradiates parts of the chamber 64 other than the holding frame 112 that holds the sheet TE to which the chip CP is attached. This makes it easier for metal contamination to occur from the inner wall of the chamber 64. In particular, when hydrophilization treatment is performed in the activation treatment apparatus 60 as in this embodiment, the presence of metal is undesirable. In contrast, in this embodiment, a highly directional high-speed particle beam source is used as the particle beam source 61. This suppresses irradiation of parts of the chamber 64 other than the holding frame 112 that holds the sheet TE to which the chip CP is attached. Furthermore, the particle beam source 61, which consists of a high-speed particle beam source, is effective because by scanning and moving relative to the holding frame 112 near the holding frame 112 that holds the sheet TE to which the chip CP is attached, the outer periphery of the multiple chip CPs attached to the circular area in plan view of the sheet TE1 can be shielded, thereby irradiating only the chip CP with the particle beam.

[0071] Incidentally, if the particle beam source 61 is a high-speed atomic beam source and the discharge chamber 612 is made of carbon material, carbon powder will be generated from the periphery of the discharge chamber 612. Furthermore, in the chip bonding surface activation process, if the particle beam source 61 is positioned vertically above the chip CP and the particle beam is irradiated from vertically above the chip CP, there is a risk that the carbon powder generated from the periphery of the discharge chamber 612 will fall onto and adhere to the bonding surface CPf of the chip CP. In contrast, according to this embodiment, the particle beam source 61 is positioned vertically below the multiple chip CPs. As a result, the carbon powder generated by the particle beam source 61 accumulates inside the discharge chamber 612, and scattering outside the discharge chamber 612 is suppressed, thus suppressing adhesion to the bonding surface CPf of the chip CP. Consequently, the occurrence of bonding defects between the chip CP and the substrate WT is suppressed.

[0072] Although embodiments of the present invention have been described above, the present invention is not limited to the embodiments described above. For example, the particle beam source 61 of the activation apparatus 60 may be an ion beam source that accelerates and emits nitrogen ions.

[0073] In the embodiment, an example of a chip bonding system 1 for bonding a chip CP to a substrate WT was described, but the system is not limited to this, and may also be a substrate bonding system for bonding substrates to each other. In this case, the activation processing apparatus 60 may perform the same activation process as described in the embodiment on the bonding surface of each of the substrates to be bonded to each other. For example, if metal electrodes and insulating films are provided on the bonding surfaces of the two substrates, it is preferable to irradiate the bonding surfaces of the substrates with a particle beam for activation.

[0074] In this embodiment, an example of an activation processing apparatus 60 in which a particle beam source 61 is moved relative to a holding frame 112 that holds a sheet TE to which a chip CP is attached was described. However, the apparatus is not limited to this, and for example, the particle beam source 61 may be fixed and the holding frame 112 that holds the sheet TE to which the chip CP is attached may be moved. Alternatively, the particle beam source 61 and the holding frame 112 that holds the sheet TE to which the chip CP is attached may be moved in opposite directions.

[0075] In the activation apparatus 60 according to the embodiment, a water supply unit may be provided to supply water gas into the chamber 64. Here, the water supply unit may introduce water vapor into the chamber 64, or it may introduce liquid (mist-like) water into the chamber 64. Furthermore, water vapor may be generated, for example, by passing nitrogen as a carrier gas through liquid water.

[0076] In this embodiment, an example was described in which the irradiation of the chip CP with a particle beam and the radical treatment of the chip CP are performed in a single activation treatment apparatus 60. However, the invention is not limited to this, and for example, the irradiation of the chip CP with a particle beam and the radical treatment of the chip CP may be performed in separate apparatuses.

[0077] In this embodiment, an example of a chip bonding system 1 has been described in which, in the activation processing apparatus 60, a chip bonding surface activation process, i.e., a first activation process and a second activation process, is performed on the chip CP attached to the sheet TE held in the holding frame 112, and then the holding frame 112 is immediately fed into the chip supply unit 11 of the chip supply device 10. However, the system is not limited to this, and for example, the chip bonding system may include a cleaning device (not shown) that cleans the chip CP while it is attached to the sheet TE held in the holding frame 112, and the chip CP is cleaned after the chip bonding surface activation process is performed on the chip CP. Here, the cleaning device includes, for example, a support part (not shown) that supports the holding frame 112 that holds the sheet TE to which the chip CP is attached, and a cleaning head (not shown) that discharges water or a cleaning liquid that reduces the electrode surface by applying ultrasonic or megasonic vibration to the chip CP attached to the sheet TE held in the holding frame 112. Note that the liquid discharged from the cleaning head is not limited to water and the cleaning liquid described above, but may be other types of liquids such as organic solvents. The cleaning device first cleans the entire bonding surface CPf of the tip CP by rotating the support part that holds the tip CP while spraying ultrasonically treated water or cleaning solution onto the tip CP attached to the sheet TE using a cleaning head. After that, the cleaning device dries the tip CP and sheet TE by rotating the support part with the discharge of water or cleaning solution from the cleaning head stopped. Alternatively, the cleaning device may remove particles adhering to the tip CP by spraying an inert gas such as N2 instead of water onto the tip CP.

[0078] Incidentally, as described in the embodiment, if the particle beam source 61 is a high-speed atomic beam source and the discharge chamber 612 is formed from a carbon material, carbon powder is generated from the peripheral wall of the discharge chamber 612. Then, in the chip bonding surface activation process, there is a risk that the carbon powder generated from the peripheral wall of the discharge chamber 612 will adhere to the bonding surface CPf of the chip CP. In contrast, with this configuration, after the chip bonding surface activation process is performed in the activation processing apparatus 60, the bonding surface CPf of the chip CP is cleaned in the cleaning apparatus, so that the occurrence of bonding defects of the chip CP to the substrate WT is suppressed.

[0079] Another possible method for cleaning the bonding surface CPf of the chip CP is to clean each chip CP individually before bonding them to the substrate WT using the bonding apparatus 30. However, in this case, the time required to mount multiple chip CPs onto the substrate WT is prolonged because each chip CP is cleaned individually. In contrast, with this configuration, multiple chip CPs attached to the sheet TE can be cleaned at once. Therefore, the time required to mount multiple chip CPs onto the substrate WT can be shortened.

[0080] In the embodiment, an example was described in which, in the chip bonding surface activation process, multiple chips CP are attached to a sheet TE spaced apart from each other, and then the particle beam irradiation and radical treatment of the chips CP are performed on the multiple chips CP. However, the invention is not limited to this, and for example, after dicing the substrate to be diced, which will be the basis for the multiple chips CP, the bonding surface CPf of the chips CP may be cleaned in the aforementioned cleaning device while the multiple chips CP are in contact with or connected to each other. Here, the chip supply device may have an expandable section that stretches the sheet TE held in the holding frame 112, thereby separating the multiple chips CP attached to the sheet TE. In this case, after the cleaning device cleans the multiple chips CP attached to the sheet TE held in the holding frame 112, the holding frame 112 is fed directly into the chip supply device, and the chip supply device stretches the sheet TE held in the holding frame 112, thereby separating the multiple chips CP. The chip supply device may also include a drying unit (not shown) for drying multiple chips CP and sheet TE after the sheet TE has been stretched.

[0081] With this configuration, for example, when cleaning multiple chip CPs with water or a cleaning solution, the accumulation of water between the multiple chip CPs is suppressed.

[0082] Furthermore, the aforementioned cleaning device may have, for example, an inner support portion 2119a and a frame support portion 2119b, as shown in Figure 14A. Here, the inner support portion 2119a supports the inside of the retaining frame 112 in which the sheet TE is held by the retaining frame 112. The frame support portion 2119b supports the retaining frame 112 and is movable in the -Z direction relative to the inner support portion 2119a, as shown by arrow AR10 in Figure 14A. The cleaning device also includes a frame drive unit (not shown) that drives the frame support portion 2119b in the Z-axis direction, and a rotation drive unit (not shown) that rotates the inner support portion 2119a that supports the sheet TE and the frame support portion 2119b that supports the retaining frame 112 around a rotation axis J10 along the thickness direction of the retaining frame 112, i.e., along the Z-axis direction. After the multiple chips CP are washed with water, the frame drive unit moves the frame support portion 2119b relative to the inner support portion 2119a, thereby causing the first portion PA1 on the sheet TE to which the multiple chips CP are attached to be spaced further apart in the direction of the rotation axis J10 than the second portion PA2 fixed to the holding frame 112.

[0083] Furthermore, the cleaning device also has an adsorption unit (not shown) that adsorbs the first portion PA1 on the sheet TE, to which multiple chips CP are attached, from the opposite side from the chips CP.The frame drive unit then moves the first portion PA1 on the sheet TE to a position where it is separated from the second portion PA2 in the direction of the rotation axis J10 of the sheet TE, i.e., in the -Z direction, as shown in Figure 14B.At this time, the adsorption unit adsorbs the multiple chips CP that are in contact with each other or connected, which are generated by dicing the substrate to be diced, which is the base for the multiple chips CP attached to the sheet TE.The frame drive unit then moves the frame support portion 2119b in the -Z direction relative to the inner support portion 2119a.This suppresses the separation of the multiple chips CP that are attached to the sheet TE in a state of contact with each other or connected, and thus suppresses the adhesion of water between the multiple chips CP.

[0084] Then, as shown in Figure 14C, the cleaning device cleans the chip CP by rotating the inner support part 2119a and the frame support part 2119b while discharging water or cleaning solution from the cleaning head. After that, the rotation drive unit dries the sheet TE and the multiple chips CP by rotating the inner support part 2119a and the frame support part 2119b while the discharge of water or cleaning solution from the cleaning head has stopped. At this time, the water or cleaning solution adhering to the chips CP is removed by centrifugal force, as shown by arrow AR11 in Figure 14(C).

[0085] According to this configuration, the first portion PA1 on the sheet TE to which multiple chips CP are attached is positioned at a distance H1 in the direction of the rotation axis J10 compared to the second portion PA2 fixed to the retaining frame 112. This prevents water or cleaning fluid adhering to the chips CP from accumulating without contacting the inside of the retaining frame 112 and the sheet TE when the inner support portion 2119a and the frame support portion 2119b are rotated.

[0086] Furthermore, the chip bonding system may include a cleaning device (not shown) that individually cleans each chip CP. In this case, the cleaning device may clean a single chip CP as it is being supplied from a chip supply device and transported to the bonding device.

[0087] Furthermore, as a method for dicing the substrate to be diced, which will serve as the basis for multiple chip CPs, it is preferable to employ a stealth dicing method using laser light from the viewpoint of suppressing the generation of burrs at the edges of the chip CPs. This makes it possible to treat multiple chip CPs attached to the sheet TE in a state of contact or connection with each other in the same way as a single substrate to be diced before dicing.

[0088] Furthermore, using a dicing apparatus, for example as shown in Figure 15A, a groove WCT may be formed in the portion of the substrate WC to be diced that corresponds to the portion PAS where stealth dicing has been performed. In this case, burrs may be generated in the corner portion WCC enclosed by the dashed line in Figure 15A. Therefore, the burrs generated in the corner portion WCC are removed by polishing after the groove WCT is formed. Then, as shown in Figure 15B, the substrate WC to be diced is divided into a plurality of chips CP having stepped portions CPd. In this way, because the chip CP has stepped portions CPd, the chip CP can be transported while holding the -Z direction side surface Cpd1 of the stepped portion CPd or the first corner portion CPC1. Therefore, it is possible to transport the chip CP without touching the bonding surface CPf of the chip CP and the second corner portion CPC2.

[0089] Furthermore, the chip bonding system according to the above-described modified example may further include a separation device (not shown) that performs a separation step in which the sheet TE, which is held in a holding frame 112 that holds a sheet TE to which a plurality of chips CP are attached, is stretched to separate the plurality of chips CP from each other. In addition, in this separation device, the sheet TE, in its stretched state, may be re-held in a ring-shaped sheet holding frame (not shown), and the sheet holding frame holding the sheet TE may be supplied to the bonding device.

[0090] By the way, for example, when attempting to mount multiple types of chips CP on a single substrate WT, it is necessary to loosen the stretched sheet TE and remove it from the chip supply device when changing the chip CP being fed into the device. As a result, when loosening the stretched sheet TE, there is a risk that adjacent chips CP attached to the sheet TE may collide and be damaged, generating burrs or particles.

[0091] In contrast, this configuration allows multiple chip CPs attached to the sheet TE to be maintained in a separated state. This makes it possible to store multiple types of chip CPs attached to the sheet TE. Therefore, for example, when mounting multiple types of chip CPs on a single substrate WT, the chip CPs can be mounted to the substrate WT while appropriately changing the sheet holding frame that holds the sheet TE, and the generation of burrs or particles on the chip CPs is suppressed.

[0092] In this embodiment, the chip CP may have a stepped portion CPd on the periphery on the joining surface CPf side, as shown in Figure 16A, for example. In this case, the chip transport device 39 may have a chip holding portion 3393 with a suction portion 3393a provided at the tip of the aforementioned arm 394, as shown in Figure 16A. This chip holding portion 3393 is a collet chuck that holds the chip CP by sucking it with the suction portion 3393a while a portion of it is in contact with the part of the stepped portion CPd of the chip CP that is opposite to the joining surface CPf side, i.e., the corner portion CPP1. Note that "the part of the stepped portion CPd of the chip CP that is opposite to the joining surface CPf side" includes not only the corner portion CPP1 but also the stepped portion CPd or the outermost side surface of the chip CP. In other words, the chip holding portion 3393 holds the part of the stepped portion CPd of the chip CP that is opposite to the joining surface CPf side, i.e., the corner portion CPP1. The chip transport device 39 then performs a chip transport process (second workpiece transport process) in which the chip transport device 39 holds the portion CPP1 of the stepped portion CPd of the chip CP opposite to the bonding surface CPf side using the chip holding portion 3393 and transports the chip CP from the chip supply device 10 to the bonding device 30. As shown in Figure 16B, the chip holding portion 4393 may be a collet chuck having an inclined surface 4393b. In Figure 16B, the same reference numerals are used for components that are the same as those shown in Figure 16A. In this case, when the chip CP is held by the chip holding portion 4393, the first corner portion CPC1 of the chip CP is in contact with the inclined surface 4393b, so the position of the chip CP is corrected. This is preferable because, when the chip CP is held by the chip holding portion 4393, the chip holding portion 4393 is less likely to come into contact with the bonding surface CPf or the second corner portion CPC2 of the chip CP due to misalignment of the chip CP. Furthermore, the chip holding unit may be configured to clamp and transport the second corner portion CPC2 or the outermost surface of the chip CP. In addition, the chip holding unit may have a so-called stepped tool that can suck and hold the chip CP while contacting the stepped portion CPd of the chip CP and not contacting the second corner portion CPC2 and the bonding surface CPf of the chip CP.

[0093] In the chip bonding system described in the embodiment, before the bonding process in which the chip CP is bonded to the substrate WT, the chip CPs are transported one by one to the head 33 for bonding. In this case, if a chip holding part (not shown) that holds the chip CP from the bonding surface CPf side is provided at the tip of the aforementioned arm 394, if the chip holding part comes into contact with the bonding surface CPf or the corner of the chip CP, particles or burrs may be generated, and there is a risk that voids will be generated at the interface between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT. Also, if the chip holding part comes into contact with the bonding surface CPf of a chip CP that has undergone activation treatment, the condition of the bonding surface CPf may deteriorate, and there is a risk that a bonding failure will occur between the chip CP and the substrate WT. For example, in a method of bonding the chip CP to the substrate WT by melting the solder provided on the chip CP, particles attached to the bonding surface CPf of the chip CP are incorporated into the solder, so they do not significantly affect the bonding state between the chip CP and the substrate WT. However, in the method of joining the chip CP to the substrate WT after performing an activation treatment on the bonding surface CPf of the chip CP, the bonding surface CPf and the mounting surface WTf are joined in a solid state. Therefore, particles adhering to the bonding surface CPf of the chip CP or burrs generated at the corners of the chip CP can significantly affect the bonding state between the chip CP and the substrate WT. In contrast, with this configuration, a stepped portion CPd is provided on the peripheral side of the bonding surface CPf of the chip CP. This makes it possible to transport the chip CP without touching the bonding surface CPf of the chip CP, thereby suppressing the generation of particles or burrs at the bonding surface CPf and corners of the chip CP and maintaining the bonding surface CPf in good condition, thus suppressing the occurrence of bonding defects between the chip CP and the substrate WT.

[0094] Furthermore, this configuration is not limited to cases where the method for activating the bonding surface CPf of the chip CP is the aforementioned particle beam irradiation method, but is also effective when the activation method is, for example, a method of activating the bonding surface CPf of the chip CP by applying plasma treatment to the bonding surface CPf of the chip CP. In a bonding method in which a chip CP and a substrate WT are bonded by performing an activation treatment on the bonding surface CPf of the chip CP, if the chip holder comes into contact with the activated bonding surface CPf, a bonding defect between the chip CP and the substrate WT will occur. Therefore, as mentioned above, transporting the chip CP without touching the bonding surface CPf is particularly important for good bonding between the chip CP and the substrate WT.

[0095] In this embodiment, an example was described in which, after performing an activation treatment on the bonding surface CPf of the chip CP, a cleaning step is performed to clean the bonding surface CPf of the chip CP while it is being transported to the bonding apparatus 30. However, the invention is not limited to this, and after performing the activation treatment on the bonding surface CPf of the chip CP, the bonding surface CPf of the chip CP may be cleaned before transporting the chip CP to the bonding apparatus 30. In this case, it is preferable because particles adhering to the bonding surface CPf of the chip CP can be removed before transporting it to the bonding apparatus 30.

[0096] In this embodiment, an example was described in which chips CP are transported one by one to the head 33H of the bonding apparatus 30 and bonded to the substrate WT. However, the invention is not limited to this, and for example, after the separation process described above, the chips CP may be transported to the bonding apparatus 30 while attached to the sheet TE and directly bonded to the substrate WT. The bonding apparatus may include, for example, a stage 315 which is a substrate support part that holds the substrate WT, a frame support part 3331 which supports a holding frame 112 that holds a sheet TE to which multiple chips CP are attached, a head 3033H which presses the chips CP toward the stage 315 from the opposite side of the sheet TE from the chip CP side, a head drive part 3036 which drives the head 3033H, and a lifting mechanism (not shown) which raises and lowers the frame support part 3331 and the head drive part 3036. In Figure 17A, components similar to those in this embodiment are denoted by the same reference numerals as in Figure 2.

[0097] The bonding apparatus also includes a support drive unit (not shown) that drives the stage 315 and the frame support unit 3331, an imaging unit (not shown) that images a first alignment mark and a second alignment mark from at least one of the sides of the chip CP opposite to the substrate WT and the side of the substrate WT opposite to the chip CP, and a control unit (not shown) that controls the support drive unit and the imaging unit. It is also assumed that the substrate WT is provided with a first alignment mark (not shown) and the chip CP is provided with a second alignment mark (not shown). In this case, the control unit controls the imaging unit to image the first alignment mark and the second alignment mark, and calculates the amount of misalignment of the chip CP relative to the substrate WT based on the captured images. Subsequently, the control unit controls the support drive unit to move the frame support unit 331 or the stage 315 relatively in a direction that reduces the amount of misalignment of the chip CP relative to the substrate WT. In other words, this chip bonding system performs the following steps: an imaging step in which an imaging unit images a first alignment mark and a second alignment mark from at least one of the sides of the substrate WT opposite to the chip CP side and the side of the chip CP opposite to the substrate WT side; a positional displacement amount calculation step in which the amount of positional displacement of the chip CP relative to the substrate WT is calculated based on the captured image taken in the imaging step; and a movement step in which the frame support 3331 or stage 315 is moved in a direction that reduces the amount of positional displacement of the chip CP relative to the substrate WT. Here, the imaging unit may be a so-called two-field camera, and may be configured to image the alignment marks provided on the chip CP and the substrate WT respectively while inserted between the chip CP and the substrate WT. Alternatively, the imaging unit may be a so-called infrared camera, and may use infrared light to image the alignment marks from the side of the substrate WT opposite to the mounting surface WTf side or the side of the chip CP opposite to the bonding surface CPf side. However, if the imaging unit is a two-field camera, particles may be mixed in between the chip CP and the substrate WT.In contrast, if the imaging unit is configured to capture alignment marks using the aforementioned infrared light, it is preferable because there is no need to place the imaging unit between the chip CP and the substrate WT, thus suppressing the intrusion of particles between the chip CP and the substrate WT and preventing particles from adhering to the chip CP or the substrate WT.

[0098] The bonding apparatus may image alignment marks while moving one imaging unit, or it may use two imaging units to image two sets of alignment marks, each consisting of an alignment mark on the substrate WT and an alignment mark on the chip CP, and calculate the positional displacement and rotational orientation displacement of the chip CP. Furthermore, when the bonding apparatus pushes up the chip CP with the head 3033H, it is preferable to hold the adjacent chip CP on the sheet TE from the side opposite to the chip CP to prevent them from being pushed up together. Also, if the sheet TE is retracted after the chip CP has been separated by stretching it, adjacent chip CPs will come into contact with each other, causing particles to be generated from the chip CPs or burrs to form on the corners of the chip CPs. Therefore, it is preferable to bond the chip CP to the substrate WT with the sheet TE stretched after the separation process described above. Furthermore, when bonding the chip CP to the substrate WT, it is preferable to press the center of the chip CP towards the substrate WT so that the center of the chip CP makes contact with the substrate WT. As a result, bonding to the substrate WT progresses from the center of the chip CP, thus avoiding the formation of voids caused by air being trapped between the chip CP and the substrate WT.

[0099] Here, the frame support section 3331, the head 3033H, and the head drive section 3036 are positioned vertically below the stage 315.

[0100] In this bonding apparatus, first, as shown in Figure 17A, the holding frame 112 is positioned so that the chip CP side of the sheet TE faces vertically upward. Next, as shown by arrows AR302 and AR303 in Figure 17B, the lifting mechanism raises the frame support 3331 and the head drive unit 3036, bringing them closer to the stage 315 so that the distance between the sheet TE and the mounting surface WTf of the substrate WT becomes a preset reference distance. In this state, as shown in Figure 17C, the head drive unit 3036 drives the head 3033H toward the stage 315 to bond the chip CP to the substrate WT. That is, the bonding apparatus bonds the chip CP to the substrate WT by moving the head 3033H toward the substrate WT while the head 3033H is in contact with the side of the sheet TE on which the multiple chip CPs are attached that is opposite to the side with the multiple chip CPs.

[0101] Furthermore, the sheet TE may be one to which an adhesive is applied that reduces its adhesive strength when ultraviolet light is irradiated to the side to which multiple chips CP are attached. In this case, the bonding apparatus may have an ultraviolet irradiation unit that can locally irradiate ultraviolet light only to the portion of the sheet TE corresponding to the chips CP that are in contact with the substrate WT. In this case, the bonding apparatus may have a head 3033H made of a transparent material, and the head 3033H may be brought into contact with the side of the sheet TE opposite to the chips CP, and the head 3033H may be moved in a direction toward the substrate WT to bring the chips CP into contact with the substrate WT, and then ultraviolet light may be irradiated to the sheet TE by the ultraviolet irradiation unit via the head 3033H. Furthermore, the sheet TE is not limited to one to which an adhesive is applied that reduces its adhesive strength when ultraviolet light is irradiated, but may also be one to which an adhesive is applied that reduces its adhesive strength when heated or by other methods.

[0102] With this configuration, unlike the chip mounting system 1 according to the embodiment, the process of picking up the chip CP from the sheet TE and transferring it to the head 33H is unnecessary, thus reducing the number of processes required for mounting the chip CP to the substrate WT. Furthermore, with this configuration, the process of transporting each chip CP individually can be omitted, which suppresses deterioration of the bonding surface CPf or generation of particles due to contact of the chip holding part with the bonding surface CPf of the chip CP when transporting each chip CP individually, or the generation of burrs caused by contact of the chip holding part with the corner of the chip CP, thereby suppressing bonding defects between the chip CP and the substrate WT.

[0103] Alternatively, after performing an activation treatment on the bonding surface CPf of the chip CP, the bonding process of bonding the chip CP to the substrate WT may be carried out immediately. Or, after performing the activation treatment on the bonding surface CPf of the chip CP and before the bonding process of bonding the chip CP to the substrate WT, a cleaning process may be carried out to clean the bonding surface CPf of the chip CP. In this case, it is preferable because particles adhering to the bonding surface CPf of the chip CP can be removed before bonding the chip CP to the substrate WT.

[0104] Incidentally, the sheet TE often contains particles generated from the chip CP when the sheet TE is stretched and separated into multiple chip CPs. Therefore, if, for example, the chip CP is to be joined from vertically above the substrate WT, the particles on the sheet TE may rain down onto the substrate WT, potentially causing poor bonding between the chip CP and the substrate WT. In contrast, with this configuration, the chip CP is joined by approaching the substrate WT from vertically below, thus suppressing the occurrence of poor bonding between the chip CP and the substrate WT caused by particles on the sheet TE.

[0105] Furthermore, this configuration is suitable for so-called hybrid bonding, in which, for example, a flat bonding surface CPf obtained by CMP polishing of a Cu electrode and an insulating film is activated by plasma treatment or particle beam irradiation, and then water molecules are attached to the bonding surface CPf to make it hydrophilic before bonding the chip CP to the substrate WT.

[0106] In the embodiment described, an example of a chip bonding system equipped with a cleaning device 85 was explained, but the system is not limited to this, and may also be configured without a cleaning device 85.

[0107] This invention allows for various embodiments and modifications without departing from the broad spirit and scope of the invention. Furthermore, the embodiments described above are for illustrative purposes only and do not limit the scope of the invention. In other words, the scope of the invention is indicated by the claims, not by the embodiments. Various modifications made within the scope of the claims and the equivalent meaning of the invention are considered to be within the scope of the invention.

[0108] This application is based on Japanese Patent Application No. 2018-162738, filed on 31 August 2018, and Japanese Patent Application No. 2018-205227, filed on 31 October 2018. The entire specifications, claims, and drawings of Japanese Patent Application No. 2018-162738 and Japanese Patent Application No. 2018-205227 are incorporated herein by reference. [Industrial applicability]

[0109] The present invention is suitable for, for example, the manufacture of CMOS image sensors, memory, computing elements, and MEMS. [Explanation of symbols]

[0110] 1: Chip bonding system, 10: Chip supply device, 11: Chip supply unit, 30: Bonding device, 31: Stage unit, 33: Bonding unit, 33H, 3033H: Head, 36, 3036: Head drive unit, 39: Chip transport device, 60: Activation processing device, 61: Particle beam source, 62: Support unit, 63: Beam source transport unit, 64: Chamber, 64a: Hole, 70: Transport device, 71: Transport robot, 80: Loading / unloading unit, 85: Cleaning device, 90: Control unit, 111: Pickup mechanism, 111a: Needle, 112: Holding frame, 113: Holding frame drive unit, 114, 622: Cover, 114a: Through hole, 119, 621: Frame holding unit, 315: Stage, 320, 853: Stage drive unit, 391: Plate, 392: Plate drive unit, 393: Chip holding 394: Arm, 395: Arm drive unit, 411: Tip tool, 411a, 411b: Through hole, 413: Head body unit, 432a: Tip support unit, 432b: Support unit drive unit, 611: Electrode, 612: Discharge chamber, 612a: FAB radiation port, 613: Beam source drive unit, 614, 677: Gas supply unit, 623: Frame holding unit drive unit, 631: Support rod, 632: Support body, 633: Support Body drive unit, 634: bellows, 672: magnetron, 673: waveguide, 674: glass window, 675: plasma chamber, 676: supply tube, 851: cleaning head, 852: stage, 2119a: inner support, 2119b: frame support, CP: chip, CPA1, CPA9: impurities, CPf: bonding surface, TE: sheet, OB1: trajectory, PLM9: sheath area, WT: substrate, WTf: mounting surface

Claims

1. A bonding system for bonding chips to a substrate, A substrate support portion that holds the substrate in a position where the cleaned bonding surface of the substrate faces vertically downward, A frame support portion is positioned vertically below the substrate support portion and supports a holding frame that holds a sheet to which a plurality of chips are attached in a position where the cleaned bonding surfaces of the chips face vertically upward, Multiple heads that contact the sheet on the side opposite to the chip side, The head drive unit drives the head toward the substrate support portion, thereby pushing one of the chips toward the substrate from the side opposite to the plurality of chips on the sheet, bringing the bonding surface of the chip into contact with the bonding surface of the substrate, thereby bonding the chip to the substrate. When one chip is pushed toward the substrate from the side opposite to the multiple chips on the sheet, the substrate support portion holds the substrate in a position where the substrate's bonding surface faces vertically downward, so as not to allow particles detached from the chip or the sheet to adhere to the bonding surface of the substrate. The sheet is located vertically below the chip, The chip is moved from the vertically lower side to the vertically upper side of the substrate with the bonding surface of the chip positioned vertically upward, and the central part of the chip is pressed toward the substrate from the opposite side of the sheet from the multiple chips, thereby bringing the central part of the chip into contact with the bonding surface of the substrate, and thus the chip is bonded to the substrate by advancing the bonding from the central part of the chip to the substrate. Joining system.

2. The substrate is provided with a first alignment mark. The aforementioned chip is provided with a second alignment mark. A support drive unit that drives at least one of the substrate support unit and the frame support unit, The side of the substrate opposite to the chip side, and the side of the chip opposite to the substrate side. From at least one of the sides, the first alignment mark and the second alignment An imaging unit that captures the mark, The system further comprises a control unit for controlling the support unit drive unit and the imaging unit, The control unit controls the imaging unit to capture the first alignment mark and the second alignment mark. Alignment marks are imaged, and based on the captured image, the chip on the substrate is determined. After calculating the amount of misalignment of the chip, the support drive unit is controlled to move the chip relative to the substrate. Move at least one of the substrate support portion and the frame support portion relative to each other in a direction that reduces the amount of misalignment. The joining system according to claim 1.

3. The head has a pressing mechanism that presses the central part of one chip toward the substrate side from the opposite side of the sheet from the multiple chips. The pressing mechanism presses the central portion of the chip toward the substrate, causing the central portion of the chip to come into contact with the bonding surface of the substrate, thereby advancing the bonding from the central portion of the chip to the substrate and bonding the chip to the substrate. The joining system according to claim 1 or 2.

4. The sheet further includes an ultraviolet irradiation section that locally irradiates ultraviolet light only to the portion of the sheet corresponding to the chip that is in contact with the substrate. The joining system according to any one of claims 1 to 3.

5. The device further comprises an activation apparatus for activating at least the bonding surface of the chip, The joining system according to any one of claims 1 to 4.

6. A bonding method for bonding a chip to a substrate, The bonding process includes, in order to prevent particles detaching from the chip or sheet from adhering to the cleaned bonding surface of the substrate, when a single chip is pushed toward the substrate from the side opposite to the multiple chips on a sheet to which multiple chips are attached with the cleaned bonding surfaces of the chips facing vertically upward, the substrate is held in a position where the bonding surface of the substrate faces vertically downward, the sheet is positioned vertically below the substrate, and with the head in contact with the side of the sheet opposite to the chip side, the head is moved toward the substrate, thereby pushing a single chip toward the substrate from the side opposite to the multiple chips on the sheet and bringing the bonding surface of the chip into contact with the bonding surface of the substrate, thereby bonding the chip to the substrate. The sheet is located vertically below the chip, In the bonding process, the chip is moved from the vertically lower side to the vertically upper side of the substrate with the bonding surface of the chip positioned vertically upward, and the central part of the chip is pressed toward the substrate from the side opposite to the multiple chips on the sheet, thereby bringing the central part of the chip into contact with the bonding surface of the substrate, and the bonding of the chip to the substrate is advanced from the central part of the chip toward the substrate, thereby bonding the chip to the substrate. Joining method.

7. The substrate is provided with a first alignment mark. The aforementioned chip is provided with a second alignment mark. An imaging step in which the imaging unit images the first alignment mark and the second alignment mark from at least one of the sides of the substrate opposite to the chip side and the sides of the chip opposite to the substrate side, A positional displacement calculation step, which calculates the amount of positional displacement of the chip relative to the substrate based on the captured image taken in the imaging step, The process further includes a moving step of moving the chip or the substrate in a direction that reduces the amount of misalignment, The joining method according to claim 6.

8. In the bonding process, ultraviolet light is locally irradiated only to the portion of the sheet corresponding to the chip that is in contact with the substrate. The joining method according to claim 6 or 7.

9. The method further includes a first activation step of activating at least the bonding surface of the chip, The joining method according to any one of claims 6 to 8.

Images