Semiconductor deposition reactor and components for reducing devitrification of quartz

Abstract

To provide susceptor supports, getter support elements, and other system elements for processing semiconductor substrates in processing chambers.SOLUTION: Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed at a maximum distance of about 1 mm to about 10 mm from the susceptor support ring.SELECTED DRAWING: Figure 9

Description

Technical Field

[0001] The present disclosure generally relates to semiconductor processing, and more specifically to susceptor supports, getter support elements, and other system elements for processing semiconductor substrates within a processing chamber.

Background Art

[0002] Semiconductor substrates, such as semiconductor wafers, are typically processed within a processing chamber under controlled process conditions that include exposure to high temperatures. A susceptor support, commonly referred to as a ring (e.g., a one-piece ring (OPR)), is typically used to support a susceptor during processing within a processing chamber (e.g., during deposition). Getter elements may be included within the processing chamber. The getter elements may be at least partially supported by a getter support element or plate. A number of quality control issues related to interactions between substrates, such as devitrification of one or more of the processing components, may occur during processing, and there is a continuing need to address these quality control issues.

Summary of the Invention

[0003] Various embodiments of semiconductor deposition components and related processing systems and methods are disclosed.

[0004] In some embodiments, a chemical vapor deposition system is disclosed. The system may include a deposition chamber, a susceptor, a susceptor support ring, a getter plate, and a chamber boundary defining the getter support. The chamber boundary may include a deposition gas inlet at its upstream end and a gas outlet at its downstream end, and may define a generally horizontal chamber passage configured to conduct gas flow along the direction of gas flow through it. The susceptor may be configured to support a substrate on which it is deposited. The chamber boundary above the susceptor may be generally transparent to radiant energy. The susceptor support ring may be positioned within the chamber passage between the gas inlet and gas outlet. The getter plate may be positioned generally horizontally within the chamber. The getter plate may extend generally parallel to the susceptor and may extend substantially laterally across the deposition chamber. The getter support may include a support base and one or more support elements. At least a portion of the getter support may include a coating containing silicon carbide (SiC). The getter support can be positioned at the maximum distance from the susceptor support ring.

[0005] In some embodiments, the susceptor support ring may be positioned within the chamber passage between the gas inlet and gas outlet and may include an opening having a center located closer to the upstream edge of the susceptor support ring than to the downstream edge. The susceptor support ring may include one or more first recesses configured to support a support element thereon. The getter support may extend generally parallel to the susceptor and may have an upstream edge shape that generally matches the corresponding downstream edge shape of the susceptor support ring. The getter support may be positioned within a maximum distance from the susceptor support ring and may include one or more recesses configured to receive one or more corresponding support elements configured to at least partially support a getter element. [Brief explanation of the drawing]

[0006] [Figure 1] Figure 1 is a perspective view of an exemplary embodiment of a process chamber. [Figure 2] Figure 2 is a cross-sectional view taken along line 2-2 in Figure 1. [Figure 3] Figure 3 is a half-view perspective of the process chamber from the vertical major axis plane, viewed along line 3-3 in Figure 1. [Figure 4] Figure 4 is a top view of the chamber shown in Figure 1. [Figure 5] Figure 5 shows the inlet end of the chamber in Figure 1. [Figure 6] Figure 6 shows the outlet end of the chamber in Figure 1. [Figure 7] Figure 7 is a side elevation view of the chamber shown in Figure 1. [Figure 8] Figure 8 is a cross-sectional view illustrating the chamber shown in Figure 1 connected to a portion of the wafer processing system. [Figure 9] Figure 9 shows a top perspective view of an exemplary reaction chamber assembly, including a susceptor support ring, getter support, and getter support shelf. [Figure 10] Figure 10 shows a bottom perspective view of the assembly shown in Figure 9. [Figure 11] Figure 11 shows a bottom view of the assembly shown in Figure 9. [Figure 12] Figure 12 shows a bottom top view of the assembly shown in Figure 9. [Figure 13] Figure 13 shows the right-hand view of the assembly in Figure 9. [Figure 14] Figure 14 shows a right-hand view of the assembly in Figure 9 with an exemplary getter plate. [Figure 15] Figure 15 shows an upper perspective view of the getter support and getter support shelf from Figure 9, but without the susceptor support ring. [Figure 16] Figure 16 shows a side view of the getter support, getter support shelf, and getter plate from Figure 14, but without the susceptor support ring. [Figure 17]Figure 17 shows a top perspective view of another embodiment of the susceptor support ring and getter support. [Figure 18] Figure 18 shows a top view of the assembly shown in Figure 17. [Figure 19] Figure 19 shows a bottom view of the assembly shown in Figure 17. [Figure 20] Figure 20 shows the right-hand view of the assembly in Figure 17. [Figure 21] Figure 21 shows a right-hand view of the assembly from Figure 17 with an exemplary getter plate. [Figure 22] Figure 22 shows a bottom perspective view of the susceptor support ring and getter support shown in Figure 17. [Modes for carrying out the invention]

[0007] Process chambers for thermally processing semiconductor wafers are often made from quartz (quartz glass) or similar materials because quartz is substantially permeable to radiant energy. Therefore, radiant heaters may be positioned adjacent to or near the outside of the chamber (e.g., at the top or bottom of the chamber), and the wafer being processed within the chamber can be heated to high temperatures without heating the chamber walls to the same level. Quartz is preferable because it can withstand very high temperatures. Furthermore, quartz is desirable due to its inert properties, which generally allow it to withstand degradation by various processing gases, and its high purity.

[0008] Due to the high temperatures associated with thermally activated chemical vapor deposition processes, the walls and other components of the process chamber, as well as the walls and other components within the process chamber, are often heated to a certain extent, and chemical particles accumulate on them. These particles may originate from chemicals in the gas passing through the reaction chamber and can cause serious problems with the purity of the resulting processed wafer. For example, such impurities can cause devitrification (e.g., wrinkles in the crystal surface rather than a smooth or glossy surface) or other degradation of the quartz surface. As a result, considerable effort has been made to reduce the accumulation of particulate matter on the reaction chamber walls. One solution is to periodically etch the inside of the process chamber to remove particulate matter before it accumulates to harmful levels. Unfortunately, quartz process chambers take a long time to heat up due to their high permeability to radiant heat. These periodic, slow etching cycles therefore reduce the maximum throughput of the machine. Furthermore, etching may not address the underlying degradation of the quartz from devitrification. When certain processes (e.g., thick lamination processes) are performed, devitrification of quartz increases, leading to flakes and particles that worsen impurities within the processing chamber.

[0009] The temperature gradient across the substrate or other elements within the reaction chamber may be generally non-uniform from the leading edge to the trailing edge (defined by the gas flow direction), which can make certain parts of the reactor elements more susceptible to devitrification. The gas temperature can be further influenced by its proximity to the heat-absorbing susceptor (substrate support) beneath the wafer. As the gas approaches and passes the susceptor, it heats considerably faster toward the downstream edge of the susceptor to its highest temperature, and then descends after moving beyond that point. Therefore, devitrification tends to accumulate on the quartz surface closest to the susceptor, particularly near the downstream edge of the susceptor, due to the direction of the gas flow.

[0010] The reaction chamber may include a getter plate or other getter element used to improve reaction efficiency. The getter can be at least partially supported by a getter support. The getter support may generally comprise quartz, consist essentially of quartz, or consist of quartz. Due to its proximity to the susceptor of the getter support, the getter support may experience devitrification. The getter support is a component positioned towards the evacuation portion of the reaction chamber. The getter support holds the getter plate intact. The getter plate can absorb thermal radiation, which reduces (e.g., prevents) chamber coating.

[0011] As a result, there is a need for improved chamber elements such as getter supports and / or susceptors that can be made from quartz or other inert materials to perform their respective reactor functions and can withstand degradation occurring on the quartz surface near the susceptor.

[0012] In an exemplary high-temperature process, the reactant gas passes over a heated substrate, causing chemical vapor deposition ("CVD") of a thin layer of reactant material onto the surface of the substrate. As used herein, the terms "processing gas," "process gas," and "reactant gas" generally refer to a gas (such as a silicon-containing gas) containing a substance to be deposited on a substrate. As used herein, these terms do not include cleaning gases. Through subsequent processes, the layer of reactant material deposited on the substrate is made into an integrated circuit. The process gas flow over the substrate is often controlled to promote the uniformity of deposition across the upper or front side of the substrate. Deposition uniformity can be further promoted by rotating the substrate holder and the substrate about a vertical central axis during deposition. The "front side" or "front face" of the substrate may refer to the upper surface of the substrate that typically faces away from the substrate holder during processing, and the "back side" of the substrate may refer to the bottom surface of the substrate that typically faces the substrate holder during processing.

[0013] Reference is now made to the drawings, in which like numerals generally refer to like parts throughout. Of course, the drawings are not necessarily to scale. Also of course, the apparatus may vary as to configuration and as to details of parts without departing from the basic concepts as disclosed herein, and the method may vary as to the specific steps and the order.

[0014] Referring to FIGS. 1-8, one embodiment of a reaction chamber 10 for chemical vapor processing and the like is illustrated. As can be seen, the chamber 10 has an elongated, generally flat configuration which is generally lens-shaped in cross-section. Other shapes such as a rectangular prism are possible, and the lens-shaped configuration with both convex surfaces facing opposite directions is for purposes of illustration. The chamber has an upper wall 12 and a lower wall 14 connected by vertically short side rails 16 and 18. The side rails 16, 18 may be higher in some embodiments (e.g., forming a substantially rectangular prism). The side rails 16, 18 may be referred to as "side walls" or "sidewalls". These walls and side rails are further joined by an upstream inlet end flange 20 and a downstream outlet end flange 22. Upstream and downstream are related to the direction of process gas flow as described and are synonymous with forward and rearward herein. The terms "wall" or "side wall" may be used interchangeably with "boundary" herein. The walls are not limited to generally vertical components but may refer to generally horizontal components additionally or alternatively, and the walls described herein may be of any suitable shape for forming a chamber boundary that defines a deposition chamber. For example, the chamber boundary can define a generally horizontal chamber passage configured to conduct a gas flow along the direction of the gas flow through it.

[0015] The height of the chamber may be less than the width of the chamber. In this regard, the longitudinal axis of the chamber 10 extends from the inlet end flange 20 to the outlet end flange 22, or along the cutting line 3-3. The lateral axis extends between the short side rails 16 and 18, or along the cutting line 2-2. The height direction is perpendicular to both the longitudinal axis and the lateral axis. Looking at the end view of Figure 2, the chamber 10 has the larger dimension extending between the side rails 16 and 18, and the smaller dimension extending between the apex of the upper wall 12 and the apex of the lower wall 14.

[0016] Referring to Figure 4, both the upper wall 12 and the lower wall 14 may be thin, curved, plate-like elements with rectangular, flat vertical projections. In some embodiments, walls 12 and 14 may have a circular radius of curvature and may also be formed by segments cut from cylindrical tubes made of quartz or a similar material. In larger chambers, walls 12 and 14 may be constructed by heating and forming flat quartz plates. Undesirable stresses are introduced into curved walls with varying radii, and therefore, circular walls with a constant curvature can be implemented. In some embodiments, the upper wall 12 and the lower wall 14 have a radius of curvature of approximately 24 inches. In some embodiments, one or both of the upper wall 12 and the lower wall 14 have a thickness of 4 to 6 millimeters, and more preferably, the wall thickness is approximately 5 millimeters. Quartz is preferred, but may be substituted with other materials having similar desirable properties. Some of these desirable properties include a high melting point, the ability to withstand large and rapid temperature changes, chemical inertness, and high light transmittance.

[0017] The side rails 16, 18 may be machined from a rectangular cross-section quartz rod to the cross-sectional shape illustrated in Figure 2, or may be formed by other means. More specifically, each side rail 16, 18 may include a reinforced body having an upper surface 24 that forms a continuity of the curved outer surface of the upper wall 12, and a lower surface 26 that curves to form a continuity of the outer surface of the lower wall 14. The lateral outer surface 28 of each side rail 16, 18 is flat and extends vertically. The inner surface of each side rail 16, 18 is formed by upper recesses 30a and lower recesses 30b that extend in the longitudinal direction, which generate upper, middle, and lower stub wall segments 32a, 32b, and 32c, respectively. In the shown embodiment, the upper and lower stub wall segments 32a and 32c fit with the lateral edges of the upper wall 12 and lower wall 14 at a longitudinally welded joint 39. In some embodiments, the bodies of the side rails 16, 18 have a thickness or width of approximately 20 mm and a height of approximately 21 mm.

[0018] In some embodiments, a flat rectangular support plate 40 may extend between the side rails 16 and 18. As seen in Figure 3, the support plate 40 extends across the width of the chamber 10 and includes an opening 42 that defines a void or opening 44, dividing the support plate into an inlet section 46a and an outlet section 46b. The inlet section 46a extends from the inlet flange 20 to the upstream edge of the opening 44, and the outlet section 46b extends from the downstream edge of the opening 44 to the outlet flange 22. As may be seen in Figure 4, the inlet section 46a of the support plate may be shorter in the longitudinal direction than the outlet section 46b. The inlet section may be, for example, about 70% of the length of the outlet section. Its proportional arrangement is related to the flow of process gas through the chamber, rather than the strength characteristics of the chamber wall.

[0019] As is best seen in Figure 2, each of the side rails 16 and 18 includes an inwardly extending central stub wall 32b that effectively forms an extension of the support plate 40. In this respect, the support plate 40 actually terminates in the body of the side rails 16 and 18, or in other words, in the lateral outer range of the recesses 30a and 30b. The longitudinal joint 48 shows a welded connection between the lateral edge of the support plate 40 and the central stub wall 32b of each of the side rails 16 and 18.

[0020] The central stub wall 32b may bisect the upper wall 12 and the lower wall 14, and the support plate 40 may therefore be placed on the centerline or central plane between them. This preferred location generally generates stress in the plane of the plate 40 imposed by the lateral displacement of the side rails 16, 18. Such displacement occurs during decompression processing when outward forces are applied as the walls 12, 14 attempt to flatten.

[0021] Referring to Figures 1 and 3, each of the end flanges 20, 22 may include outer, generally rectangular slabs 50, 51, respectively, having chamfered corners 52 and an inner, lenticular extension 54. As can be seen from Figure 3, the inner extension 54 matches the shape of the upper wall 12 and lower wall 14 and the central support plate 40. More specifically, the short longitudinal portion extends from the slab 50 and connects to each of these plate-like members. At each end of the chamber 10, a curved welded joint 56 is formed between the curved upper wall 12 and lower wall 14 and the upper and lower portions of the extension 54, while a straight joint line 58 is defined between the central portion of the extension 54 and the longitudinal end of the support plate 40. The slab 50 of the inlet flange 20 includes a laterally extending opening 60 within its upper portion, which leads into a region 66 within the chamber 10 that is above the support plate 40 and below the upper wall 12. In contrast, the slab 51 of the outlet flange 22 includes a pair of laterally extending openings 62 and 64. The upper opening 62 communicates with the aforementioned upper region 66 of the chamber 10, while the lower opening 64 communicates with a lower region 68 of the chamber 10 that is below the support plate 40 and above the lower wall 14. The rounded recesses 30a and 30b within the side rails 16 and 18 define the lateral boundaries of the upper and lower regions 66 and 68. As will be described later, wafer processing takes place only in the upper region 66, and the support plate 40 defines the lower boundary of the process zone.

[0022] The opening 44 is sized to accommodate a susceptor 84, as illustrated in Figure 8, and a temperature compensation ring 72 surrounding the susceptor. The compensation ring 72 may be referred to as an integrally molded ring (OPR). The susceptor 84 can be fitted to rotate within the stationary ring 72 and preferably separated from them by a small annular gap of about 0.5 to 1.0 mm. The general perimeter of the opening in the ring 72 that can accommodate the susceptor is schematically illustrated in Figure 4 by the dashed circle 74 shown therein. The shape of the opening 42 in the support plate 40 surrounding the ring 72 can also be circular so that the edges of the opening 44 can be close to the ring. In some embodiments, a rectangular opening 42 has rounded corners, as shown in Figure 4. Sections 46a and 46b of the support plate may be configured to provide their exact or approximate shapes, or, for ease of manufacture, the short, somewhat triangular sections 76 of the filler shown in Figure 4 may be welded to the plate sections and the side rails 16 and 18 of the chamber to provide the desired configuration. Section 46b of the support plate may function as a getter support in some embodiments, as will be described in more detail below.

[0023] As shown in Figure 4, circle 74 is not centered relative to the upstream and downstream ends of the chamber or to the opening 44. This is because, in some embodiments, the upstream or leading edge of circle 74 is closer to the downstream edge of the inlet plate section 46a than to the downstream or trailing edge of circle 74 relative to the upstream edge of the outlet plate section 46b. This arrangement may help maintain the strength of the chamber by reducing the rate of devitrification at the upstream edge of the outlet plate section 46b. That is, the gas flow heats up as it passes the susceptor, so that the temperature inside the chamber wall tends to be maximum just downstream of the susceptor. Therefore, if the upstream edge of the outlet plate section 46b is positioned too close to the susceptor, it may be exposed to significant thermal cycling and devitrification, and thus the susceptor is offset forward within the opening 44 so that the distance between them increases. In some configurations, this offset arrangement also affects the flow of process gas through the chamber. The wafer, placed on the ring-enclosed susceptor, is positioned near the downstream edge of the inlet plate section 46a to reduce or minimize the amount of reaction gas passing through the upstream opening 44 of the wafer. This reduces or minimizes the amount of reaction gas that may accumulate under the susceptor and / or on the back side of the wafer within the lower portion 68 of the chamber 10.

[0024] As can be seen in Figure 8, the temperature compensation ring 72 can be supported by one or more (e.g., three) support elements (e.g., elbow-shaped) having vertically extending portions welded to the support plate section. In some embodiments, a forward support element or finger 80 is welded to the rear of the forward plate section in the middle of the chamber rails 16, 18, and the horizontal portion of the element extends backward into the opening 44 so as to be positioned below the front edge of the temperature compensation ring 72. A pair of spaced elements or fingers 82 have elongated horizontal portions that extend forward below the rear edge of the compensation ring 72, as can be seen in Figures 2-7 as well as Figure 8. Thus, the compensation ring 72 can be supported in the horizontal plane at one or more points by upright pins (not shown) in the fingers 80 and 82. The pins may eventually degrade from repeated thermal cycling and exposure to process and etching gases, but the pins are fairly easily replaceable.

[0025] The susceptor 84 is shown supported on an arm 86 of a preferred support 88, which is connected to the upper end of a rotatable shaft 90 that extends through a tube 92 dependent on the bottom wall of the chamber. The susceptor 84 is shown at approximately the same height as the upper edge of the ring 72 and the upper surface of the support plate 40. This allows the wafer to be positioned above the susceptor 84 and within the upper portion 66 of the process chamber 10.

[0026] Referring still to Figure 8, the inlet flange 20 is fitted to connect to an inlet component 94 having a horizontally elongated slot 96 through which a wafer may be inserted, and is fitted to have an elongated inlet 98 for introducing process gas into the upper portion 66 of the chamber after a separation valve leading from the slot 96 to the wafer handling chamber (not shown) is closed. Accordingly, the outlet flange 22 is fitted to mate with the outlet component 100 not only for exhausting process gas from the chamber 10 but also for applying a vacuum to the chamber. As can be seen from Figure 8, the outlet flange 22 is open to the upper portion 66 of the chamber as well as the lower portion 68 of the chamber below the support plate.

[0027] Multiple thermocouples 102 may be included, each extending through the outlet component 100 and into the lower portion 68 of the process chamber 10. The thermocouples 102 extend near the susceptor 84 to sense the local temperature surrounding the susceptor 84 and the wafer positioned above it. The advantageous positioning of the sensing ends of the thermocouples 102 surrounding the susceptor 84 allows for comprehensive feedback regarding the wafer temperature and enables adjustment of the radiant heating lamps surrounding the chamber 10 to compensate for temperature irregularities. More specifically, a leading-edge thermocouple 104 terminates near the front end of the susceptor 84, a trailing-edge thermocouple 106 terminates near the rear edge of the susceptor, and a lateral thermocouple (not shown) terminates near the lateral edge of the susceptor. Each of the thermocouples 102 enters a temperature compensation ring 72 formed from two parts to provide a hollow interior within it. The temperature compensation ring 72 includes an internal and external body that are generally L-shaped, and collaboratively define an annular passage through the ring to receive the thermocouple 102.

[0028] Preferably, the temperature compensation ring 72 is constructed from graphite or other such highly heat-absorbing materials. The ring 72 offers several advantages in the processing environment, primarily by reducing edge heat loss from the susceptor 84. More specifically, the ring 72 closely surrounds the edge of the susceptor 84 and, being made of similar materials, is maintained at similar temperatures during processing. Thus, the susceptor and the ring radiate heat toward each other to effectively offset any radiative losses between them. Another advantage of the temperature compensation ring 72 is the preheating and postheating of the reactant gas within the wafer region. Specifically, the reactant gas enters the chamber at ambient, non-reactive temperatures and is heated to a temperature suitable for deposition as it passes through the susceptor and wafer. Thus, the ambient temperature compensation ring 72 preheats the stream of reactant gas before it reaches the leading edge of the susceptor and then the leading edge of the wafer. The process gas may reach a near-steady state temperature before moving beyond the wafer edge. Because the temperature compensation ring 72 extends the downstream heating region, the gas temperature may not drop significantly after passing the downstream edge of the wafer. Further advantages of the temperature compensation ring 72 will be discussed later with reference to the modified ring.

[0029] Figure 8 shows the gas flow through the chamber. The reactant gas enters through the inlet component 94 with a predetermined lateral velocity profile, such as the profile described in U.S. Patent No. 5,221,556, which is expressly incorporated herein by reference. The predetermined velocity profile provides a larger gas flow toward the central portion of the reaction chamber 10 than the lateral outer edges, compensating for a longer deposition migration path toward the center of the circular wafer supported on the susceptor 84. Due to the depletion of reactant along its flow path above the wafer, a larger amount of reactant gas may be required across the central portion of the wafer. Furthermore, as best seen in Figure 2, the cross-sectional shape of the chamber 10 accommodates a larger gas flow in the center of the chamber where a larger reactant gas flow is required, rather than at the lateral edges where a smaller reactant gas flow is required.

[0030] The reactant gas continues backward along its longitudinal axis, as indicated by arrow 112, and exits downward through the outlet component 100 and the exhaust conduit 114, as indicated by arrow 116. The purge gas may also be supplied upward through a hollow tube 92 surrounding the shaft 90, the tube being sized to provide a gas passage around the shaft. The purge gas enters the lower portion 68 of the chamber 10, as indicated by arrow 118. The purge gas prevents the undesirable accumulation of particles below the susceptor 84 and exits through the lower longitudinal opening 64 in the outlet flange 22, as indicated by arrow 120. The purge gas is then mixed with the spent reaction gas and continues to flow downward through the exhaust conduit 114 along the path of arrow 116. In some embodiments, the purge gas can be supplied through an opening in the lower portion of the chamber (e.g., on the left side as shown), flowing from left to right and exiting through the opening 64 and the exhaust port 114.

[0031] The end flanges 20 and 22 are preferably translucent and made of quartz having nitrogen bubbles dispersed within them. Meanwhile, the central thin walls 12 and 14 and support plate 40 are permeable to radiant energy, allowing radiant heating of the susceptor and wafer within the chamber 10 without generating high temperatures within these structures. The translucent flanges 20 and 22 scatter radiant energy, reducing "light transmission" through them. This protects the O-rings 122 on the outside of the flanges 20 and 22 from exposure to the extreme temperatures generated within the chamber 10. The section of tube 92 below the lower wall 14 is also preferably translucent, with nitrogen bubbles dispersed within it.

[0032] Chamber 10 may utilize a rectangular cross-section chamber, which may increase the usefulness of a low, wide shape. The rectangular chamber shape is beneficial in that it may allow wafer insertion from one end and replacement susceptors and / or rings to be inserted from the other end of the chamber. Such arrangements may additionally or alternatively allow for the introduction of a gas flow from end to end through the chamber using gas flowing over an internal support plate substantially aligned with the wafer being processed within the chamber.

[0033] Modified ring and getter support elements As described above, devitrification can occur in the reaction chamber, particularly downstream of the susceptor, where most of the heat in the reaction chamber can be radiated during use, which is problematic. Several solutions for reducing devitrification downstream of the susceptor are described herein. The devitrification described above may be reduced by modifying the getter support elements (e.g., the outlet support section 46b) and / or the susceptor support ring (e.g., the stationary ring 72 described above) and / or other elements described later.

[0034] In some embodiments, one or more elements may include (e.g., be coated with) an amorphous material resistant to devitrification. The amorphous material may be a semiconductor such as silicon carbide (SiC). One or more elements may be formed substantially or entirely from this material. However, in some embodiments, one or more elements may be coated with one or more layers of the material.

[0035] For example, the getter support (e.g., the outlet support section 46b described above) may be coated with SiC. Because SiC is resistant to devitrification, the coated getter support can advantageously prevent devitrification of the getter support, while at the same time being able to perform other functions that getter supports formed from quartz can perform (e.g., high melting point, ability to withstand large and rapid temperature changes, chemical inertness). On the other hand, quartz is also generally permeable to radiant thermal energy, which is an advantageous material for the reaction chamber walls (as described above), but the getter support does not rely on its permeability to perform its function. Instead, the getter support supports the getter plate within the reaction chamber while also serving to prevent reactant gases from entering the lower part of the reaction chamber (e.g., the lower part 68 of chamber 10 described in Figure 8). As described above, the getter plate can absorb thermal radiation, reducing the coating of the chamber walls and other chamber elements. Therefore, SiC-coated getter supports can perform most or all of the functions previously performed by quartz getter supports, while also reducing or completely avoiding devitrification.

[0036] The thickness of the coating may be sufficient to reduce the possibility of penetration that could expose the material beneath the coating, while not being thicker than necessary to avoid excessive manufacturing costs. For example, since SiC tends to be an expensive material, balancing the coating thickness may be advantageous. Therefore, the coating thickness may be any value within the range of approximately 5 microns, 10 microns, 15 microns, 20 microns, 25 microns, 30 microns, 40 microns, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns, 120 microns, 140 microns, 150 microns, 180 microns, 200 microns, or 250 microns, or may fall within a range that has one of these endpoints. For example, in some embodiments, the thickness is approximately 100 to 120 microns. In some embodiments, the coating thickness may be at least the same as one of the above values. For example, in some embodiments, the coating is at least approximately 50 microns thick. The material on which the coating is laminated may be graphite.

[0037] Figure 9 shows a top perspective view of an exemplary reaction chamber assembly, including a susceptor support ring 204, a getter support 208, and a getter support shelf 212. The susceptor support ring 204 may correspond to and / or include one or more features of the ring 72 described above. The getter support 208 may correspond to and / or include one or more features of the outlet support section 46b described above. The direction D of the gas flow is shown in Figure 9. Consequently, “upstream” and “downstream” may refer to direction D. Thus, “upstream” may be synonymous with “forward,” and “downstream” may be synonymous with “backward” or “rearward.” The susceptor support ring 204 may include an opening 216 adapted therein to receive a susceptor. The opening 216 may be substantially circular in shape. The opening 216 may be approximately centered within the susceptor support ring 204, but in some embodiments, the center of the opening 216 may be slightly off-center within the susceptor support ring 204 (for example, as described above with respect to circle 74).

[0038] The susceptor support ring 204 may be a rectangle having generally rounded corners 232. The downstream rounded corners 232 may generally follow the corresponding upstream rounded portion 236 of the getter support 208. In this way, the rounded corners 232 can be positioned slightly laterally inward with respect to the lateral edge of the ring 204, as shown, so that the lateral edge of the ring 204 is substantially parallel (e.g., collinear) to the corresponding lateral edge of the getter support 208. The rounded corners 232 and / or the corresponding upstream rounded portion 236 may be configured to form generally curved transverse portions of the edges of their respective components. The susceptor support ring 204 and the getter support 208 may be configured such that a gap 224 can be formed between the susceptor support ring 204 and the getter support 208. In some embodiments, the maximum distance across the gap 224 may be small enough to still provide thermal separation between the susceptor support ring 204 and the getter support 208, while avoiding the possibility of reactant gas passing through to the lower part of the chamber. The maximum distance can be any value among about 0.5 mm, about 1 mm, about 2 mm, about 3 mm, about 4 mm, about 5 mm, about 6 mm, about 7 mm, about 8 mm, about 9 mm, about 10 mm, about 11 mm, about 12 mm, or can fall within a range having any of these values ​​as endpoints. For example, in some embodiments, the maximum distance is about 1 mm to 10 mm. The maximum distance can be optimized for each embodiment as needed. A larger maximum distance results in a greater decrease in downstream devitrification. On the other hand, a larger maximum distance allows a larger amount of reactant gas to pass through to the lower part of the reaction chamber, which can lead to the formation of impurities and deposits on the underside of the elements in the reaction chamber (as described above).

[0039] The rounded corners 232 and / or rounded portions 236 of the getter support 208 may have a radius of curvature (e.g., curvature corresponding to the radius) that falls within a range of approximately 30 mm, approximately 35 mm, approximately 40 mm, approximately 50 mm, approximately 60 mm, approximately 65 mm, approximately 70 mm, approximately 80 mm, approximately 90 mm, any value within that range, or having an endpoint within that range. For example, in some embodiments, the radius of curvature is approximately 50 mm to approximately 80 mm.

[0040] The getter support 208 may, advantageously, have a width 226 along the longitudinal axis D and in the central portion of the getter support 208. The width 226 may be an important consideration based on a number of factors. The width 226 may, advantageously, extend to a value high enough to allow the reactant gas to cool sufficiently before contacting the getter support shelf 212, thereby reducing the possibility of devitrification. On the other hand, a longer width 226 imposes structural stress on the components within the reaction chamber. Consequently, the width chosen above depends on a variety of factors, including the type of equipment used, the processing temperature used, the dimensions of the reaction chamber, and the materials of the reaction chamber components. The width 226 may be any value within the range of approximately 1 mm, 5 mm, 10 mm, 20 mm, 30 mm, 50 mm, 60 mm, 80 mm, 100 mm, 120 mm, 150 mm, 175 mm, 180 mm, 200 mm, 250 mm, 280 mm, 300 mm, 350 mm, 400 mm, 450 mm, or 500 mm, or may fall within a range having one of these values ​​as an endpoint. For example, in some embodiments, the width 226 is approximately 1 mm to 150 mm. The getter support shelf 212 may be made of quartz, and therefore, if the width 226 is too short, the getter support shelf 212 may be susceptible to devitrification.

[0041] As shown, the system may include a getter support shelf 212 configured to at least partially support the getter support 208 thereon. As stated above, due to certain limitations (e.g., manufacturing costs), all components within the reaction chamber do not have to be made of inert material (e.g., SiC) (e.g., they do not have to be coated). For example, the getter support shelf 212 may comprise uncoated quartz (e.g., it may consist of quartz in essence, or it may consist of quartz).

[0042] The getter support shelf 212 may be advantageously configured to allow the getter support 208 to be supported without requiring contact with any other quartz component in the upper chamber. The getter support 208 may be supported, for example, by the side wall of the reaction chamber (which may itself be quartz). However, in embodiments in which the getter support 208 is made of a material such as graphite coated with an inert material (e.g., SiC), the getter support 208 may become hotter than a getter support 208 made from another material (e.g., quartz), which may cause devitrification at any connection (e.g., mounting, support) between the getter support 208 and the quartz reaction chamber wall in the upper part of the reaction chamber. As a result, the embodiment shown in Figure 9 allows the getter support shelf 212 to support the getter support 208 within the reaction chamber without requiring support from any wall in the reaction chamber. Therefore, the getter support 208 may have a lateral dimension smaller than the internal lateral dimension of the reaction chamber (e.g., the lateral distance between opposing side walls). Additionally or alternatively, the getter support 208 may not have to contact one or both side walls of the reaction chamber in order to avoid or reduce this risk of devitrification.

[0043] The getter support shelf 212 may include an upper portion 248, a lower portion 246, a support portion 247 (not shown in Figure 9), and one or more legs 244. These are described in more detail below. A gap 234 may be formed between the getter support 208 and the getter support shelf 212. The gap 234 may be implemented to thermally separate selected portions of the support shelf 212 and the getter support 208. For example, a gap along the long axis can be located between the upper portion 248 and the getter support 208, as shown in Figure 9. In some embodiments, the maximum distance across the gap 234 may be large enough to provide thermal separation, but nevertheless small enough to avoid the possibility of reactant gases passing across the gap 234 into the lower portion of the chamber. For example, the maximum distance can be any value within approximately 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, 11 mm, or 12 mm, or it can fall within a range having any of these values ​​as the endpoint. For example, in some embodiments, the maximum distance is approximately 1 mm to 10 mm.

[0044] The surface 230 of the getter support shelf 212 may be substantially coplanar with the surface 218 of the susceptor support ring 204 and / or the surface 228 of the getter support 208. Additionally or alternatively, the surface 218 of the getter support 208 may be substantially coplanar with the surface 228 of the getter support 208. Coplanar surfaces may promote laminar flow of reactant gas across the corresponding gaps 224, 234, while reducing the flow of reactant gas across these gaps to the lower portion of the chamber.

[0045] The edges of the susceptor support ring 204 and / or getter support 208 (e.g., rounded corners 232 and / or rounded portions 236) can be beveled or curved (e.g., toward faces 218 / 228 and / or toward the underside of the support ring 204 and / or getter support 208) to form a chamfer. For example, the chamfer can be on the lower edges of the rounded corners 232 and / or rounded portions 236. The chamfer can advantageously create additional separation from portions of the getter support 208 that may be susceptible to devitrification, and thus further reduce devitrification, while maintaining a relatively smaller gap 224 between the susceptor support ring 204 and the getter support 208, and thus reducing the flow of reactant gas to the underside of the chamber. The chamfer can have a width that falls within the range of approximately 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, or any value within that range, or within any of these values ​​with an endpoint. For example, in some embodiments, the width of the chamfer is approximately 1 mm to 4 mm.

[0046] The getter support 208 and / or getter support shelf 212 may include one or more recesses 220a, 220b, 220c. One or more recesses 220a, 220b, 220c may be configured to receive one or more corresponding getter support elements therein. One or more support elements can support getters (not shown in Figure 9, see, for example, Figure 14) on them. The material of each getter support element may be the same as or different from one another. In some embodiments, the material of the getter support elements may be selected based on which of the one or more recesses 220a, 220b, 220c each getter support element is coupled to. For example, the material of any getter support element may substantially include the material of the corresponding component having the corresponding one or more recesses 220a, 220b, 220c. For example, the first getter support element connected to the first recess 220a of the getter support 208 may be graphite coated with an inert material (e.g., SiC). The second getter support element connected to the second recess 220b may contain the same material as the first getter support element. Additionally or alternatively, the third getter support element connected to the third recess 220c in the getter support shelf 212 may have a material corresponding to the material of the getter support shelf 212, such as quartz. If the material of the getter support elements is substantially the same as the material of the corresponding getter support portion 208 and / or getter support shelf 212, this may further reduce any devitrification risk that may be associated with placing a thermally conductive material (e.g., graphite) in very close proximity to or in contact with quartz. The embodiment shown in Figure 9 envisions two getter support elements connected to the getter support 208 and one getter support element connected to the getter support shelf 212, but this is merely an example. Other configurations and a number of getter support elements (and their corresponding recesses) are possible.

[0047] Figures 10 to 13 show various diagrams of the assembly shown in Figure 9 to provide additional information relating to the structure of some of the components described above. Figure 10 shows a bottom perspective view of the assembly. Figure 11 shows a bottom view, Figure 12 shows a top view, and Figure 13 shows a right view. As shown in Figure 12, the getter support shelf 212 may have a larger lateral dimension than the getter support 208. In some embodiments, the getter support shelf 212 is connected to the side wall of the reaction chamber, while the getter support 208 may not be connected.

[0048] As shown in Figure 13, the lower portion 246 of the getter support shelf 212 may be substantially parallel to the upper portion 248. Additionally or alternatively, the lower portion 246 may be substantially wider than the getter support shelf 212 (along direction D), but each may have substantially similar lateral dimensions. One or more legs 244 may be connected to the corresponding portions 246, 248 of the getter support shelf 212. The support portion 247 may connect the lower portion 246 to the upper portion 248, and may also be substantially perpendicular to the lower portion 246 and / or upper portion 248. One or more legs 244 may extend the lateral dimension of the getter support shelf 212, but other options are also possible.

[0049] The getter support shelf 212 may support the getter support 208 via one or more support elements 240. These one or more support elements 240 may include rods, posts, or other support structures. As shown, four support elements 240 support the getter support section 208, but other numbers of support elements 240 are possible. Each of the one or more support elements 240 may be connected between the upper surface of the lower section 246 and / or the corresponding recess in the back (bottom side) of the getter support 208. The support elements 240 can be configured to rest on a portion of the getter support shelf 212, such as the lower section 246, as shown.

[0050] Figure 14 shows a right-hand view of the assembly of Figure 9 having an exemplary getter plate 250. The getter plate 250 may be supported by one or more support elements 254a, 254b, 254c. Each of the support elements 254a, 254b, 254c may be connected to (e.g., fitted into) the corresponding recesses 220a, 220b, 220c described above. The getter plate 250 may be substantially planar and may also be parallel to more of the surfaces 230 of the susceptor support ring 204, the getter support 208, and / or the getter support shelf 212. In some embodiments, the getter plate 250 extends further upstream than the getter support 208, so that the getter plate 250 overlaps (e.g., covers) at least partially with a portion of the susceptor support ring 204 in the longitudinal direction. The getter plate 250 may be made of graphite, but other materials are possible. As described above, one or more support elements 254a, 254b, 254 may be made of a material corresponding to the material of the component to which each support element is connected.

[0051] Figure 15 shows a top perspective view of the getter support 208 and the getter support shelf 212 (without the susceptor support ring 204). As shown, the getter support shelf 212 may support the getter support 208 on four support elements 240.

[0052] Figure 16 shows a side view of the getter support 208, getter support shelf 212, and getter plate 250 (without the susceptor support ring 204). The getter plate 250 may be positioned generally horizontally within the reaction chamber. Additionally or alternatively, the surfaces 230 of the getter support 208 and getter support shelf 212 may be generally horizontal.

[0053] Figure 17 shows a top perspective view of another embodiment of the susceptor support ring 304 and getter support 308. The susceptor support ring 304 may reduce devitrification by implementing a selected downstream width 336 of the susceptor support ring 304 (from the opening edge to the downstream edge of the support ring 304 along direction D), which allows the reactant gas to be sufficiently cooled before contact with the getter support 308, thereby avoiding or reducing the occurrence of devitrification of the getter support 308. The susceptor support ring 304 may generally be formed from graphite (e.g., it may comprise graphite, be essentially composed of graphite, or be composed of graphite), and the getter support 308 may generally be formed from quartz (e.g., it may comprise quartz, be essentially composed of quartz, or be composed of quartz).

[0054] The opening 316 may be positioned substantially evenly or unevenly within the susceptor support ring 304. For example, the width 336 along direction D may be greater than the corresponding dimension from the opening edge to the outer lateral edge of the susceptor support ring 304, as shown. As described above, the opening 316 can be positioned axially away from the center within the susceptor support ring 304 to allow for a larger width 336. Thus, the width 336 along direction D can be greater than the corresponding upstream width along direction D from the opening edge to the upstream edge of the ring 304. The positioning and configuration of the opening 316 can be carried out in other embodiments of this specification.

[0055] The susceptor support ring 304 may have a different shape (for example, generally square or rectangular). Additionally or alternatively, the opening 316 may be substantially circular. The susceptor support ring 304 may include one or more features of the susceptor support ring 204 described above. Additionally or alternatively, the getter support 308 may include one or more features of the getter support 208 described above.

[0056] The downstream width 336 of the susceptor support ring 304 may be described as the minimum distance from the edge of the opening 316 to the downstream edge of the susceptor support ring 304. The minimum distance may be any value within approximately 1 mm, 5 mm, 10 mm, 20 mm, 30 mm, 50 mm, 60 mm, 80 mm, 100 mm, 120 mm, 150 mm, 175 mm, 180 mm, 200 mm, 250 mm, 280 mm, 300 mm, 350 mm, 400 mm, 450 mm, or 500 mm, or may fall within a range having any of these values ​​as endpoints. For example, in some embodiments, the width 336 is approximately 1 mm to 150 mm. The width 336 may be an important consideration based on a number of factors. For example, the longer the width 336, the greater the reduction in devitrification, generally speaking. On the other hand, a longer width of 336 imposes structural stress on the components within the reaction chamber. Consequently, the width selected above depends on various factors, including the type of equipment used, the processing temperature used, the dimensions of the reaction chamber, and the materials of the reaction chamber components.

[0057] The getter support 308 may be configured to support the getter plate at least partially (not shown in Figure 17). The getter support 308 may cooperate with the susceptor support ring 304 in supporting the getter plate. For example, one or more recesses 320a, 320b, 320c may be contained within one or both of the susceptor support ring 304 and / or the getter support 308. Each of the recesses 320a, 320b, 320c may be configured to support one or more corresponding getter support elements (not shown). As described above with reference to the recesses 220a, 220b, and 220c, the material of the getter support element may substantially include the material of the element having the corresponding one or more recesses 220a, 220b, 220c. The embodiment shown in Figure 17 envisions two getter support elements connected to the getter support 208 and one getter support element connected to the getter support shelf 212, but this is merely an example. Other configurations and a number of getter support elements (and their corresponding recesses) are possible.

[0058] The surfaces 318 of the susceptor support ring 304 and 328 of the getter support 308 may be substantially coplanar with each other. Additionally or alternatively, one or both of surfaces 318, 328 may be generally upward oriented. The surface 328 of the getter support 308 may be generally rectangular. In some embodiments, the surface 328 may have a downstream longitudinal width 332 that is shorter than the lateral dimension (e.g., extending from edge to edge) that spans the entire getter support 308. In some embodiments, the longitudinal width 336 of the susceptor support ring 304 may be greater than the longitudinal width 332 of the getter support 308.

[0059] The gap 324 between the downstream edge of the susceptor support ring 304 and the upstream edge of the getter support 308 may generally be small to reduce the passage of reactant gas through it, but may be generally thermally conductive (e.g., graphite), and is large enough to avoid causing devitrification of the getter support 308 which may be formed from quartz by the susceptor support ring 304. The maximum distance across the gap 324 can be any value within the range of about 0.5 mm, about 1 mm, about 2 mm, about 3 mm, about 4 mm, about 5 mm, about 6 mm, about 7 mm, about 8 mm, about 9 mm, about 10 mm, about 11 mm, about 12 mm, or having any of these values ​​as endpoints. For example, in some embodiments, the maximum distance is about 1 mm to 10 mm. The maximum distance can be optimized for each embodiment as needed.

[0060] The getter support 308 may additionally or alternatively support the susceptor support ring 304 at least partially. In some embodiments, the getter support 308 is connected to one or more side walls of the reaction chamber for additional structural support. However, in some embodiments, the getter support 308 may be largely or completely supported by the base wall of the reaction chamber via one or more legs 344. The lateral dimensions of the getter support 308 may be greater than the lateral dimensions of the susceptor support ring 304, as such proximity / contact may cause devitrification of the reaction chamber wall due to heat radiating from the susceptor support ring 304, and it may be undesirable to have the susceptor support ring 304 in contact with, or even very close to, the side wall of the reaction chamber.

[0061] Figures 18 to 20 show various views of the assembly shown in Figure 17. Figure 18 shows a top view, Figure 19 shows a bottom view, and Figure 20 shows a right-side view of the assembly. As shown in Figure 19, the support portion 347 of the getter support 308 may be used to connect to and at least partially support the susceptor support ring 304. The support portion 347 may also support the susceptor support ring 304 from below.

[0062] As shown in Figure 20, the support portion 347 of the getter support 308 may be connected to a support element 352 (e.g., a rod, bar, pillar, etc.) on which the susceptor support ring 304 is placed. The support element 352 may be connected to corresponding recesses within the upper side of the support portion 347 and / or within the bottom side of the susceptor support ring 304.

[0063] Figure 21 shows a right-hand view of the assembly of Figure 20 having a getter plate 350. The getter plate 350 may be supported by one or more support elements 354a, 354b, 354c. Each of the support elements 354a, 354b, 354c may be connected to (e.g., fitted into) the corresponding recesses 320a, 320b, 320c described above. The getter plate 350 may be substantially planar and may be parallel to one or more of the surfaces 230 of the susceptor support ring 204, the getter support 208, and / or the getter support shelf 212. In some embodiments, the getter plate 350 extends further upstream than the getter support 208, so that the getter plate 350 overlaps (e.g., covers) at least partially with a portion of the susceptor support ring 204 in the longitudinal direction. The getter plate 350 may be made of graphite, but other materials are possible. As described above, one or more support elements 354a, 354b, and 354c may be made of a material corresponding to the material of the component to which each support element is connected.

[0064] Figure 22 shows a bottom perspective view of the susceptor support ring 304 and getter support 308 of Figure 17. As shown, the getter support 308 includes three legs 344. Two of the legs 344 do not extend across the entire lateral dimension of the getter support 308, but the third leg 344 extends across substantially the entire lateral dimension. As with other features shown in Figures 1-22, this is shown as an example only, and other alternatives are possible.

[0065] While the present invention has been described in relation to certain specific embodiments, other embodiments that are apparent to those skilled in the art, including embodiments that do not provide all the features and advantages described herein, are also within the scope of the invention. As will be understood by those skilled in the art, each of the individual variations described and illustrated herein has individual components and features that may be readily separated from or combined with any of the features of some other embodiments without departing from the scope or spirit of this disclosure. All such modifications are intended to be within the scope of the claims associated with this disclosure. It should also be noted that in some embodiments, the configuration of the components described herein also provides aesthetic, decorative, or otherwise non-functional benefits. [Explanation of symbols]

[0066] 10 Chambers 12 Upper wall 14 Lower wall 16 Side Rails 18 Side Rails 20 Inlet flange 22 Outlet flange 24 Upper surface 26 Lower surface 28 Lateral outer surface 30a Upper recess 30b Lower recess 32a Upper stub wall segment 32b Central stub wall segment 32c Lower stub wall segment 39 Longitudinal welded joint 40 Support Plates 42, 44 Openings 46a Entrance Section 46b Exit Section 48 Long axis joint 50, 51 Slab 52 Chamfered corners 54 Extension 56 Welded joint 58 Joint line 60 aperture 62 Upper opening 64 Lower opening 66 Upper area 68 Lower area 72 Temperature Compensation Ring 74 yen 76 Triangular Sections 80 Fingers 82 Fingers 84 Susceptor 86 Arm 88 Support 90 shaft 92 Hollow Tube 94 Entrance Components 96 slots 98 Long and narrow entrance 100 Exit Component 102 Thermocouple 104 Front edge thermocouple 106 Rear edge thermocouple 114 Exhaust conduit 122 Rings 204 Susceptor Support Ring 208 Getter Support 212 Support Shelf 216 Aperture 218 sides 220a First recess 220b Second recess 220c Third recess 220c recess 224 Gap 226 width 228, 230 sides 232 Rounded corners 234 Gap 236 Rounded parts 240 support elements 244 Legs 246 Lower part 247 Support section 248 Upper part 250 Getter Plate 254 Support Elements 254a, 254b, 254c Support elements 304 Susceptor Support Ring 308 Getter Support 316 Aperture 318 sides 320a, 320b, 320c recess 324 Gap 328 sides 332 Long axis width 336 Long axis width 344 Legs 347 Support section 350 Getter Plate 352 Support Elements 354a, 354b, 354c Support elements

Claims

1. A chemical vapor deposition system, A chamber boundary defining a deposition chamber having a deposition gas inlet at its upstream end and a gas outlet at its downstream end, the chamber boundary defining a generally horizontal chamber passage configured to conduct gas flow along the direction of gas flow passing through it, the chamber boundary comprising quartz, A susceptor configured to support a substrate thereon, wherein the chamber boundary above the susceptor is generally permeable to radiant energy, A susceptor support ring positioned within the chamber passage between the gas inlet and the gas outlet, A getter plate positioned generally horizontally within the chamber, extending generally parallel to the susceptor and extending laterally substantially across the deposition chamber, A getter support comprising a support base and one or more support elements, wherein at least a portion of the getter support and at least one of the one or more support elements are coated with silicon carbide (SiC), and the getter support is positioned at a maximum distance of about 1 mm to about 10 mm from the susceptor support ring. A getter support shelf is provided, which is generally positioned on a horizontal chamber boundary and configured to at least partially support the getter support, A chemical vapor deposition system in which the getter support shelf has one or more recesses in its plane, and the one or more recesses are configured to receive one or more corresponding support elements configured to support the getter plate.

2. A chemical vapor deposition system, A chamber boundary defining a deposition chamber having a deposition gas inlet at its upstream end and a gas outlet at its downstream end, the chamber boundary defining a generally horizontal chamber passage configured to conduct gas flow along the direction of gas flow passing through it, A susceptor configured to support a substrate thereon, wherein the chamber boundary above the susceptor is generally permeable to radiant energy, A susceptor support ring positioned within the chamber passage between the gas inlet and the gas outlet, A getter plate positioned generally horizontally within the chamber, extending generally parallel to the susceptor and extending laterally substantially across the deposition chamber, A getter support comprising a support base and one or more support elements, wherein at least a portion of the getter support is coated with silicon carbide (SiC), and the getter support is positioned at the maximum distance from the susceptor support ring. A getter support shelf is provided, which is generally positioned on a horizontal chamber boundary and configured to at least partially support the getter support, A chemical vapor deposition system in which the getter support shelf has one or more recesses in its plane, and the one or more recesses are configured to receive one or more corresponding support elements configured to support the getter plate.

3. The chemical vapor deposition system according to claim 2, wherein the chamber boundary comprises quartz.

4. The chemical vapor deposition system according to claim 2, wherein the maximum distance is approximately 1 mm to approximately 10 mm.

5. The chemical vapor deposition system according to claim 2, wherein the getter support includes a minimum width along the direction of the gas flow through the chamber, ranging from approximately 1 mm to approximately 150 mm.

6. The chemical vapor deposition system according to claim 2, wherein the susceptor support ring has at least one rounded corner.

7. The chemical vapor deposition system according to claim 6, wherein the getter support comprises at least one rounded portion that generally tracks each at least one rounded corner, and maintains a maximum distance from the susceptor support ring along the length of the at least one rounded corner.

8. The chemical vapor deposition system according to claim 7, wherein the rounded portion includes a radius of curvature of approximately 50 mm to approximately 80 mm.

9. The chemical vapor deposition system according to claim 7, wherein the edges of the rounded portion are chamfered.

10. The chemical vapor deposition system according to claim 9, wherein the chamfer has a width of approximately 1 mm to approximately 4 mm.

11. The chemical vapor deposition system according to claim 2, wherein the coating has a thickness of at least about 50 microns.

12. The chemical vapor deposition system according to claim 2, wherein the getter support shelf comprises one or more support elements extending between the getter support and the getter support shelf.

13. The chemical vapor deposition system according to claim 2, wherein the getter support shelf is configured not to be connected to the side wall of the chamber boundary.

14. The chemical vapor deposition system according to claim 2, wherein the getter support is configured to include a surface that is substantially in the same plane as the surface of the susceptor support ring and the surface of the getter support shelf.

15. The chemical vapor deposition system according to claim 2, wherein the getter support has an upstream edge shape that generally matches the corresponding downstream edge shape of the susceptor support ring.

16. The chemical vapor deposition system according to claim 2, wherein the getter support comprises one or more recesses configured to receive one or more corresponding support elements configured to support the getter plate.

17. The chemical vapor deposition system according to claim 16, wherein the one or more recesses are two recesses.

18. A chemical vapor deposition system, A chamber boundary defining a deposition chamber having a deposition gas inlet at its upstream end and a gas outlet at its downstream end, the chamber boundary defining a generally horizontal chamber passage configured to conduct gas flow along the direction of gas flow passing through it, A susceptor configured to support a substrate thereon, wherein the chamber boundary above the susceptor is generally permeable to radiant energy, A susceptor support ring positioned within the chamber passage between the gas inlet and the gas outlet, the susceptor support ring having an opening with a center located closer to the upstream edge than the downstream edge of the susceptor support ring, and comprising one or more first recesses configured to support a support element thereon, A chemical vapor deposition system comprising: a getter support extending generally parallel to the susceptor and having an upstream edge shape generally matching the corresponding downstream edge shape of the susceptor support ring, the getter support comprising one or more recesses configured to receive one or more corresponding support elements, which are positioned within the maximum distance from the susceptor support ring and configured to at least partially support a getter element.

19. The chemical vapor deposition system according to claim 18, wherein the getter support comprises one or more support elements.

20. The chemical vapor deposition system according to claim 18, further comprising a getter plate positioned generally horizontally within the chamber.

21. The chemical vapor deposition system according to claim 20, wherein the getter plate extends laterally, generally parallel to the susceptor and substantially across the deposition chamber.

22. The chemical vapor deposition system according to claim 18, wherein the maximum distance is approximately 1 mm to approximately 10 mm.

23. The chemical vapor deposition system according to claim 18, wherein the minimum distance from the opening to the downstream edge of the susceptor support ring is approximately 1 mm to approximately 150 mm.

24. A chemical vapor deposition system assembly, A susceptor support ring configured to be positioned between the gas inlet and gas outlet of the chamber passage, A getter support comprising a support base and one or more recesses therein, wherein each of the one or more recesses is configured to receive one or more corresponding support elements configured to support a getter plate, and at least a portion of the getter support is provided with a silicon carbide (SiC) coating having a thickness of about 100 microns to about 120 microns, and is configured to be positioned at a maximum distance of about 1 mm to about 10 mm from the susceptor support ring, A getter support shelf is provided, which is generally positioned on a horizontal chamber boundary and configured to at least partially support the getter support, A chemical vapor deposition system assembly wherein the getter support shelf has one or more recesses in its plane, and the one or more recesses are configured to receive one or more corresponding support elements configured to support the getter plate.

25. A chemical vapor deposition system assembly, A susceptor support ring positioned within a chamber passage between a gas inlet and a gas outlet, comprising a susceptor support ring having an opening with a center located closer to the upstream edge than the downstream edge of the susceptor support ring, and comprising one or more first recesses configured to support a support element thereon, wherein the minimum distance from the opening to the downstream edge of the susceptor support ring is approximately 1 mm to approximately 150 mm, A chemical vapor deposition system assembly comprising: a getter support extending generally parallel to a susceptor and having an upstream edge shape generally consistent with the corresponding downstream edge shape of the susceptor support ring, the getter support comprising one or more recesses configured to receive one or more corresponding support elements positioned within the maximum distance from the susceptor support ring and configured to support a getter plate thereon.

Images